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<http://code.google.com/p/homecmos/wiki/WetEtchRecipes>
Unless otherwise specified, chemical concentrations are as follows:
* Acetone: concentrated
* H2O2: 3% solution in water
* HCl: 37% solution in water
* HF: 3% solution in water
* NaOH: 1% solution in water
* KOH: 30% solution in water
# metals
## Aluminum (evaporated)
Copper etches should work but etch rates will be slightly different
## Chromium (evaporated)
Copper etches should work but etch rates will be slightly different
# Other materials
<table>
<tr>
<th>Material</th>
<th>Etch</th>
<th>Suggested masks</th>
<th>Temperature</th>
<th>Approximate etch rate</th>
</tr>
<tr>
<td>Copper (evaporated)</td>
<td>1 HCl : 6 H<sub>2</sub>O<sub>2</sub></td>
<td>photoresist</td>
<td>room temperature</td>
<td>3500-4000 nm/min</td>
</tr>
<tr>
<td>Copper (evaporated)</td>
<td>1 HCl : 5 H<sub>2</sub>O<sub>2</sub> : 50 H<sub>2</sub>O</td>
<td>photoresist</td>
<td>room temperature</td>
<td>350-400 nm/min</td>
</tr>
<tr>
<td>Silicon (\<100\> plane)</td>
<td>KOH</td>
<td>thermal SiO<sub>2</sub> (slowly attacked), Ta<sub>2</sub>O<sub>5</sub> (deep etches)</td>
<td>80C</td>
<td>TODO</td>
</tr>
<tr>
<td>Silicon (\<110\> plane)</td>
<td>KOH</td>
<td>thermal SiO<sub>2</sub> (slowly attacked), Ta<sub>2</sub>O<sub>5</sub> (deep etches)</td>
<td>80C</td>
<td>TODO</td>
</tr>
<tr>
<td>Silicon dioxide (thermal)</td>
<td>1 HF : 5 H<sub>2</sub>O</td>
<td>photoresist</td>
<td>room temperature</td>
<td>TODO</td>
</tr>
<tr>
<td>Silicon dioxide (sol-gel)</td>
<td>1 HF : 5 H<sub>2</sub>O</td>
<td>photoresist</td>
<td>room temperature</td>
<td>1200 - 1800 nm/min</td>
</tr>
<tr>
<td>Tantalum oxide (sol-gel)</td>
<td>HF</td>
<td>Cu with Cr adhesion layer</td>
<td>80C</td>
<td>5-20 nm/min (rough number)</td>
</tr>
</table>
# missing
* silicon (isotropic)
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