@article{tagkey2012IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "IFC - ",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(12)00022-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269212000225",
key = "tagkey2012IFC"
}
@article{Talukdar2012169,
title = "Non linear dynamics of memristor based 3rd order oscillatory system",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "169 - 175",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.012",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100262X",
author = "A. Talukdar and A.G. Radwan and K.N. Salama",
keywords = "Memristor",
keywords = "Oscillating poles",
keywords = "Stable oscillation memristor",
keywords = "Dynamic poles",
abstract = "In this paper, we report for the first time the nonlinear dynamics of three memristor based phase shift oscillators, and consider them as a plausible solution for the realization of parametric oscillation as an autonomous linear time variant system. Sustained oscillation is reported through oscillating resistance while time dependent poles are present. The memristor based phase shift oscillator is explored further by varying the parameters so as to present the resistance of the memristor as a time varying parameter, thus potentially eliminating the need of external periodic forces in order for it to oscillate. Multi memristors, used simultaneously with similar and different parameters, are investigated in this paper. Mathematical formulas for analyzing such oscillators are verified with simulation results and are found to be in good agreement."
}
@article{Wang2012176,
title = "Analytical optimization of high-performance and high-yield spiral inductor in integrated passive device technology",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "176 - 181",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002618",
author = "Cong Wang and Nam-Young Kim",
keywords = "Spiral inductor",
keywords = "Inductance",
keywords = "Q-factor",
keywords = "Yield",
keywords = "Integrated passive device (IPD)",
abstract = "The analytical optimization of several spiral inductors with different inner diameters, line widths, coil spacing, turn numbers, ring shapes, metal thicknesses, and substrates was performed by the measurement-derived inductance and Q-factor. Through the analytical optimization, a thick electroplated Cu/Au metal process and an additional sputter-etching strategy on a 200 μm finished SI-GaAs substrate with the suitable layout parameters have been proposed in order to obtain the higher performance and yield for the spiral inductors. The proposed physical layouts and fabrication parameters are an optimal solution for manufacturing spiral inductors in the integrated passive device (IPD) process that require high performance, stringent size, and volumetric efficiency."
}
@article{Tang2012182,
title = "A charge-pump and comparator based power-efficient pipelined ADC technique",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "182 - 188",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.009",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100259X",
author = "Xian Tang and Chi-Tung Ko and Kong-Pang Pun",
keywords = "Low-power ADC",
keywords = "Pipelined ADC",
keywords = "Charge-pump",
keywords = "Comparator",
keywords = "Digital calibration",
abstract = "A charge-pump and comparator based technique is presented for power-efficient pipelined analog-to-digital conversion. The technique takes advantage of a passive charge pump to implement the core function of residue voltage amplification and exploits a comparator-controlled charging circuit to buffer the residue voltage to the next stage. Unlike the conventional buffer circuit using source followers, no voltage headroom is sacrificed in this voltage buffering scheme. The comparator overshoot due to comparator delay is minimized by a self-cancellation scheme. The proposed pipelined ADC technique uses only capacitors, comparators and current sources with digital calibration to achieve low power consumption. Designed and fabricated in a 0.18 μm CMOS technology, a proof-of-concept ADC has measured 39.1 dB SNDR (6.2-bit ENOB) at 25 MS/s while consuming 3.5 mW from a 1.8 V supply."
}
@article{Haghdad2012189,
title = "Power grid analysis and verification considering temperature variations",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "189 - 197",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002588",
author = "Kian Haghdad and Javid Jaffari and Mohab Anis",
keywords = "Power grid",
keywords = "Voltage drop",
keywords = "Voltage integrity",
keywords = "Statistical",
keywords = "Thermal analysis",
abstract = "Process variations significantly impact leakage power, a pivotal parameter in designing a power grid. Because of the strong relationship between temperature and leakage power, the variations also impose statistical behavior on the operating temperature. In addition, the metal resistivity of a power grid increases with temperature. Therefore, ignoring the interdependency between leakage and temperature can introduce large errors in the power grid design. In this paper, a power grid analysis is proposed considering a statistical thermal profile across the grid. In addition, an efficient verification method is provided that ensures the robustness of the power grid in the presence of variations. A reliable estimation of the statistical thermal profile at the architecture level makes it possible to address any voltage violation early in the design process."
}
@article{Trulls2012198,
title = "A small-area inductorless configurable wideband LNA with high dynamic range",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "198 - 204",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002552",
author = "Xavier Trulls and Diego Mateo and Adria Bofill",
keywords = "LNA",
keywords = "Variable-gain amplifier",
keywords = "High dynamic range",
keywords = "Inductorless",
keywords = "Configurable",
keywords = "Capacitive attenuation",
abstract = "This paper presents a two-stage fully differential inductorless wideband low noise amplifier (LNA) with high dynamic range, using a switchable capacitive attenuation circuit, selectable-input impedance-matching topology, and bypassable amplifier. The proposed LNA is fabricated in a double-oxide 65 nm / 0.2 μ m minimum channel length CMOS technology and achieves a bandwidth from 500 MHz to 2.5 GHz, a voltage gain range of 30.6 dB, a minimum noise figure of 4.1 dB, and a maximum IIP3 of 22.8 dBm. The LNA dissipates between 28.8 and 39.5 mW and occupies an area of 0.041 mm2."
}
@article{SamehEbrahim2012205,
title = "Design and simulation of a universal N-bit binary encoder using single electron linear threshold gates",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "205 - 215",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002540",
author = "Sameh Ebrahim and Rehan",
keywords = "Single-electron nano-devices (SENDs)",
keywords = "Tunnel junction (TJ)",
keywords = "Linear threshold gate (LTG)",
keywords = "Binary encoder",
keywords = "Artificial neural network (ANN)",
keywords = "Stability plots",
abstract = "The Single-Electron (SE) Linear Threshold Gate (LTG) is one of the basic functional Single-Electron Nano-Devices (SENDs). In this paper, using a SE LTG as the basic building block in an artificial neural network (ANN) is reviewed. A universal SE ANN 2-bit (4-to-2) binary encoder, which is composed of only two SE LTGs, is designed. The detailed schematic diagrams along with the corresponding SIMON 2 simulation results (that include input and output signals as well as the stability diagrams) of the designed binary encoder are included. The proposed SE ANN 2-bit binary encoder can easily be generalized to design n-bit binary encoders. As an example of this generalization, a SE ANN 3-bit (8-to-3) binary encoder, which is composed of three SE LTGs, is designed and its SIMON 2 simulation results are presented. This design is compared with the previously reported C-SET 3-bit binary encoder."
}
@article{Osorio2012216,
title = "Prediction of the impact of substrate coupled switching noise on frequency synthesizers",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "216 - 224",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002448",
author = "Juan F. Osorio and Xavier Aragones",
keywords = "Frequency synthesizers",
keywords = "Integrated circuit noise",
keywords = "Substrate coupling",
abstract = "This paper proposes a methodology to accurately predict the phase noise effects in frequency synthesizers as a consequence of switching noise coupled through the substrate. The method proposed is based on a phase model of a frequency synthesizer where each circuit block is characterized by complex noise sensitivity functions. Considering the phase information of the different contributors allows to evaluate the noise without overestimation, as well as identifying the main noise contributors. This information can then be used by designers to decide where to put the effort to mitigate the noise effects. The methodology is applied to a typical N-Integer frequency synthesizer based on a LC-VCO. Measurements on this frequency synthesizer implemented in a 0.35 μm CMOS technology have provided information of the relative importance of the noise aggressors, the effect of the loop on the phase noise, as well as comparison to the predictions obtained with the proposed methodology."
}
@article{Petrellis2012225,
title = "A real-time self-calibrated current mirror for wide range current reference generation, signal reproduction and delaying",
journal = "Microelectronics Journal",
volume = "43",
number = "3",
pages = "225 - 234",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002424",
author = "Nikos Petrellis and George Adam and Dimitrios Ventzas",
keywords = "Current mirror",
keywords = "Current mode circuits",
keywords = "Analogue digital conversion",
keywords = "Calibration",
abstract = "Current Mirrors are widely used in current mode circuits like A/D Converters, current conveyors, filters etc. The most important features of a current mirror are its precision, its input and output, resistance and minimum voltage and its frequency response. Although several mirrors with extremely small current transfer error have been presented, this error is usually measured in the typical case. This error may significantly differ in real-time conditions depending on mismatches, process and temperature variations. Stimulated by the current reference generation required in an A/D Converter with novel binary tree architecture that has been recently presented, an appropriate current mirror architecture supported by real time calibration logic is described in this paper. This mirror can generate a high enough output current (up to 1 mA), with relatively low transfer error (<4%), in a descent frequency range of up to 1 GHz. It requires a 1–1.2 V voltage supply and dissipates a power that can be as low as 0.3 mW. The error is measured using mismatch and process variation Monte Carlo post-layout simulations in TSMC 90 nm process."
}
@article{tagkey2012IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "IFC - ",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(12)00003-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269212000031",
key = "tagkey2012IFC"
}
@article{Dave201289,
title = "A process and temperature compensated current reference circuit in CMOS process",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "89 - 97",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002412",
author = "Marshnil Dave and Maryam Shojaei Baghini and Dinesh Kumar Sharma",
keywords = "Current reference circuit",
keywords = "Variation",
keywords = "Short-channel MOSFETs",
keywords = "Monte Carlo simulations",
abstract = "A novel current reference circuit that compensates for process and temperature variations without any extra trimming is proposed in this paper. Four thousand Monte Carlo simulations show that the maximum % error (deviation from the desired value) in the reference current is ±5.07% considering process variations (die-to-die, wafer-to-wafer and batch-to-batch). Considering process variations and temperature change from 0 °C to 100 °C both, the maximum error in the reference current is±8.56%. The proposed circuit has been fabricated in 180 nm CMOS process. Measurement results on 50 dice at room temperature show that the mean of the proposed reference current is 9.39% away from its designed value. Mean of drain current of a fixed biased MOSFET fabricated in the same run is 35.41% away from its designed value. Measurements at four different temperatures, 27 °C, 50 °C, 75 °C and 100 °C, on these dice show that the maximum error in the reference current is 17% whereas that in the drain current of a fixed biased MOSFET is 126%. In other words, the proposed current reference circuit reduces the maximum error by a factor of 7 (from 126% to 17%) when process and temperature variations both are considered without trimming. With a simple trimming circuit the maximum variation in the reference current is reduced to ±3.17%"
}
@article{DaSilva201298,
title = "Virtual RF system platform dedicated to heterogeneous complex SoC design",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "98 - 109",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002400",
author = "Lucas Alves Da Silva and Eric Dekneuvel and Alexandre Lewicki and Benjamin Nicolle and Gilles Jacquemod",
keywords = "Virtual platform",
keywords = "RF system",
keywords = "IP-AMS",
keywords = "Behavioral modeling",
keywords = "Hierarchical library",
keywords = "BER and power estimation",
abstract = "In this paper, we propose to develop a hierarchical library associated with various simulators that can be used in a single platform, called TrustMe-ViP, which enables a unique simulation framework and full model interoperability. Such platform is dedicated to complex SoC design, such as trusted personal devices where cost and time-to-market are very important constraints. To validate this methodology, we present the estimation of BER and power consumption for a Bluetooth transceiver."
}
@article{Mohammad2012110,
title = "A reduced voltage swing circuit using a single supply to enable lower voltage operation for SRAM-based memory",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "110 - 118",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002394",
author = "Baker Mohammad and Jacob Abraham",
keywords = "Cache design",
keywords = "Low power",
keywords = "High yield",
keywords = "Adaptive design",
keywords = "Read and write assist for SRAM",
keywords = "Voltage scaling",
keywords = "Multi voltage",
abstract = "This paper presents a new read and write assist technique to enable lower voltage operation for Static Random Access Memory (SRAM). The ability to scale the operating voltage with frequency of the chip has big impact on power consumption (Pαv2). The lower end of the operating voltage (Vddmin) for most chips is determined by the stability of the SRAM cell. The new technique uses a contention-free circuit to generate a Reduced Voltage Swing (RVS) on the wordline (VWL) and selectively reduce the supply to the bitcell (Vddmem) during write. The required VWL and bitcell voltages are programmable and controllable to adapt to performance and yield requirements. An 8 KB memory test-chip was designed to demonstrate this technique in a low-leakage 45 nm process technology. Results show a 7 to 19% improvement in Vddmin depending on the process corner, which translates into 14–40% reduction on active power. The proposed technique has 4% area overhead and minimal impact to speed."
}
@article{Salman2012119,
title = "Utilizing interdependent timing constraints to enhance robustness in synchronous circuits",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "119 - 127",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002382",
author = "E. Salman and E.G. Friedman",
keywords = "Delay uncertainty",
keywords = "Variations",
keywords = "Setup-hold time interdependence",
keywords = "Constraint characterization",
abstract = "Interdependent setup-hold times are exploited during the design process to improve the robustness of a circuit. Considering this interdependence only during static timing analysis (STA), as demonstrated in the previous work, is insufficient to fully exploit the capabilities offered by interdependence. This result is due to the strong dependence of STA results on the specific circuit, cell library, and operating frequency. Interdependence is evaluated in this paper for several technologies to determine the overall reduction in delay uncertainty rather than improvements in STA. Reducing delay uncertainty produces a more robust synchronous circuit. The increasing efficacy of interdependence in deeply scaled technologies is also demonstrated by investigating the effect of technology scaling on interdependent timing constraints."
}
@article{Qian2012128,
title = "Through-silicon-via insertion for performance optimization in three-dimensional integrated circuits",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "128 - 133",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002370",
author = "Libo Qian and Zhangming Zhu and Yintang Yang",
keywords = "3-D ICs",
keywords = "TSV Insertion",
keywords = "Interconnect delay",
keywords = "Signal reflection",
abstract = "Through-silicon-via (TSV) interconnect is one of the main technologies for three-dimensional integrated circuits production (3-D ICs). Based on a parasitic parameters extraction model, first order expressions for the TSV resistances, inductances, and capacitance as functions of physical dimension and material characteristic are derived. Analyzing the impact of TSV size and placement on the interconnect timing performance and signal integrity, this paper presents an approach for TSV insertion in 3D ICs to minimize the propagation delay with consideration to signal reflection. Simulation results in multiple heterogeneous 3D architectures demonstrate that our approach in generally can result in a 49.96% improvement in average delay, a 62.28% decrease in the reflection coefficient, and the optimization for delay can be more effective for higher non-uniform inter-plane interconnects. The proposed approach can be integrated into the TSV-aware design and optimization tools for 3-D circuits to enhance system performance."
}
@article{Wang2012134,
title = "Achieving low capture and shift power in linear decompressor-based test compression environment",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "134 - 140",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002229",
author = "Weizheng Wang and Jishun Kuang and Zhiqiang You",
keywords = "Scan testing",
keywords = "Linear decompressor",
keywords = "Low power",
keywords = "Design for testability",
keywords = "X-filling",
abstract = "Growing test data volume and excessive power dissipation are two major issues in testing of very large scale integrated (VLSI) circuits. Most previous low power techniques cannot work well with test-data compression schemes. Even if some low power methods can be applied in a test compression environment, they cannot reduce shift power and capture power simultaneously. This paper presents a new low shift-in power scan testing scheme in linear decompressor-based test compression environment. By dividing the test cubes into two kinds of blocks: non-transitional (low toggles) and transitional (with toggles) and feeding scan chains with these blocks through a novel DFT architecture, this approach can effectively reduce the quantity of transitions while scanning-in a test pattern. A low capture and shift-out power X-filling method compatible with the scan testing scheme is also proposed. The X-filling method assigns an interdependent X-bits set at each run and achieves significant power reduction. Interestingly, in the comprehensive strategy, capture power reduction agrees with shift-out power reduction to a certain extent. Experimental results on the larger ISCAS'89 and ITC'99 benchmark circuits show that the holistic strategy can reduce test power in shift cycles and capture cycles significantly under the constraint of certain compression ratio."
}
@article{Luo2012141,
title = "Scalable linear array architectures for matrix inversion using Bi-z CORDIC",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "141 - 153",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002199",
author = "J.W. Luo and C.C. Jong",
keywords = "Bi-z CORDIC",
keywords = "Matrix inversion",
keywords = "VLSI array architecture",
keywords = "Scalable linear array architecture",
abstract = "In this paper, VLSI array architectures for matrix inversion are studied. A new binary-coded z-path (Bi-z) CORDIC is developed and implemented to compute the operations required in the matrix inversion using the Givens rotation (GR) based QR decomposition. The Bi-z CORDIC allows both the GR vectoring and rotation mode, as well as division and multiplication to be executed in a single unified processing element (PE). Hence, a 2D (2 dimensional) array consisting of PEs with different functionalities can be folded into a 1D array to reduce hardware complexity. The Bi-z CORDIC also eliminates the arithmetic complexity of the angle quantization and formation computation that exist in the traditional CORDIC. Two mapping techniques, namely a linear mapping method and an interlaced mapping method, for mapping a 2D matrix inversion array into a 1D array are proposed and developed. Consequently two corresponding array architectures are designed and implemented. Both the architectures use the Bi-z CORDIC in their PEs and they are designed to be fully scalable and parameterizable in terms of matrix size and data wordlength. The linear mapping method is a straightforward mapping offering simple schedule and control signals. The interlaced mapping method has a more complicated schedule with complex control signals but achieves 100% or near 100% processor utilization for odd and even size matrix, respectively."
}
@article{Wang2012154,
title = "Design, simulation, fabrication and characterization of a micro electromagnetic vibration energy harvester with sandwiched structure and air channel",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "154 - 159",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002138",
author = "Peihong Wang and Huiting Liu and Xuhan Dai and Zhuoqing Yang and Zhongzhu Wang and Xiaolin Zhao",
keywords = "Energy harvester",
keywords = "Vibration energy",
keywords = "Electromagnetic",
keywords = "Sandwiched structure",
keywords = "Air channel",
abstract = "This paper presents the design, simulation, fabrication and characterization of a novel electromagnetic vibration energy harvester with sandwiched structure and air channel. It mainly consists of a top coil, a bottom coil, an NdFeB permanent magnet and a nickel planar spring integrated with silicon frame. The prototype is fabricated mainly using silicon micromachining and microelectroplating techniques. The tested natural frequency of the magnet–spring system is 228.2 Hz. The comparison between the simulation and the tested results of the natural frequency shows that the Young's modulus of microelectroplated Ni film is about 163 GPa rather than 210 GPa of bulk Ni material. Experimental results indicate that the sandwiched structure and the air channel in the silicon frame of the prototype can make the induced voltage increase to 42%. The resonant frequency of the prototype at 8 m/s2 acceleration is 280.1 Hz, which results from the nonlinear behavior of the magnet–spring system. The load voltage generated by the prototype is 162.5 mV when the prototype is at resonance and the input vibration acceleration is 8 m/s2 and the maximal load power obtained is about 21.2 μW when the load resistance is 81 Ω."
}
@article{Terrence2012160,
title = "Truncation error analysis of MTBF computation for multi-latch synchronizers",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "160 - 163",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.011",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100200X",
author = "Terrence and Mak",
keywords = "Metastability",
keywords = "Mean time between failure (MTBF)",
keywords = "Latch/flip-flop",
keywords = "Taylor series",
keywords = "Truncation error",
abstract = "Chip designs have an increasing number of independent clock domains. Synchronizer circuits are used to facilitate reliable data transfers between these clock domains. The task of these synchronizers is inherently prone to the occasional, statistically random, failure. These failures are frequently quantified by the synchronizers' mean time between failures, MTBF. The MTBF becomes worse at an exponential rate with increasing frequency. In contrast, the MTBF improves exponentially as more latches are cascaded to form the synchronizer, but at the cost of increasing the data transfer latency. Thus, selecting the number of latch stages to employ in the synchronizer is a trade-off between reliability and latency. We present equations for accurate estimation of the MTBF of multi-latch synchronizers, combined with an error analysis of these equations. We compare MTBF estimates obtained by using these equations to estimates gathered from comprehensive simulation analysis, and show that error terms are not insignificant. We provide a detailed description of all the assumptions that we have made in both the formulation of the MTBF equations and the circuit simulation environment."
}
@article{Szalai2012164,
title = "Possible acception criteria for structure functions",
journal = "Microelectronics Journal",
volume = "43",
number = "2",
pages = "164 - 168",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001868",
author = "Albin Szalai and Vladimir Székely",
keywords = "Fault tolerance",
keywords = "Lumped parameter networks",
keywords = "Reference circuits",
keywords = "Standards",
keywords = "Thermal resistance",
keywords = "Time-domain analysis",
abstract = "This paper deals with the verification of thermal transient evaluation implementations. This subject is relevant because e.g. the upcoming standard will describe the thermal transient measurement as a standard method to estimate the junction-to-case thermal resistance [1,2], thus anybody can create their own implementation of the evaluation method. We have to have a method to verify these implementations. For this reason we examined the result of the NID (Network Identification by Deconvolution) method from different aspects. For these examinations we defined a multilayer structure as a reference structure and we analytically expressed the unit-step response and the cumulative structure function of this structure. Using the unit-step response as an input data set for the implementation in question we got an approximation of the structure function. Analysing this and the reference RC network we could define a practical maximum tolerance for the deviation between the analytical and the calculated functions."
}
@article{tagkey2012IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "IFC - ",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00246-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002461",
key = "tagkey2012IFC"
}
@article{Sreeja20121,
title = "Optimized 2.4 GHz voltage controlled oscillator with a high-Q MWCNT network-based pulse-shaped inductor",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "1 - 12",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002151",
author = "B.S. Sreeja and S. Radha",
keywords = "Variable capacitor",
keywords = "CNT inductor",
keywords = "Voltage-controlled oscillator",
keywords = "Phase noise",
keywords = "Q enhancement",
abstract = "This paper focuses on the use of a high-Q Multi-Wall Carbon Nano-Tube (MWCNT)-based pulse-shaped inductor in the implementation of an LC differential voltage-controlled oscillator (LCVCO). The topology integrates a micro-scaled capacitor and a MWCNT network-based inductor together with the CMOS circuits. The CMOS circuits were designed to enhance the quality factor and to control the oscillation amplitude. The high quality factor of the inductor improves the overall quality factor and phase noise of the oscillator. The measurement results show that the LCVCO operates at 2.3982 GHz and achieves a phase noise of −133.3 dBc/Hz at 1 MHz away from the carrier frequency. The VCO produces frequency tuning from 2.07 GHz to 2.77 GHz (29.16%) with an ultra low power consumption of 1.7 mW from a 0.6 V supply voltage. The output power level of the VCO is −10 dBm, with an improved quality factor of 49."
}
@article{Katz201213,
title = "High performance MEMS 0.18 μm RF-CMOS transformers",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "13 - 16",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100214X",
author = "Shlomo Katz and Igor Brouk and Sara Stolyarova and Shye Shapira and Yael Nemirovsky",
keywords = "Baluns",
keywords = "MEMS",
keywords = "Maskless micromachining",
keywords = "Q enhancement",
keywords = "CMOS transformers",
keywords = "System-on-chip",
abstract = "This work presents the application of a front-side maskless MEMS process to improve the performance of RF-CMOS transformers. High-frequency parasitic effects are much diminished, as oxide and substrate material are etched away. The passivated metal surface prevents damage to the transformer, and to other circuits, which use metal layers as self-aligned etch masks. Device self-resonant frequency was improved by 20%. At 18 GHz, device quality factor rose from 0.5 to 6, and at 50 GHz, maximum available gain was increased by 49%. The process's low cost relative to other MEMS optimization methods with similar results makes this process attractive for the use of transformers in system-on-chip design."
}
@article{Ghosh201217,
title = "An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "17 - 24",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002114",
author = "Pujarini Ghosh and Subhasis Haldar and R.S Gupta and Mridula Gupta",
keywords = "Device modeling",
keywords = "Surrounding/cylindrical gates MOSFET (SGT/CGT)",
keywords = "Dual material gate (DMG)",
keywords = "Single material gate (SMG)",
keywords = "Drain induced barrier lowering (DIBL)",
keywords = "Channel length modulation (CLM) and short channel effects (SCEs)",
abstract = "In this paper, a drain current model incorporating drain-induced barrier lowering (DIBL) has been developed for Dual Material gate Cylindrical/Surrounding gate MOSFET (DMG CGT/SGT MOSFET) and the expressions for transconductance and drain conductance have been obtained. It is shown that DMG design leads to drain current enhancement and reduced output conductance. The effectiveness of DMG design was scrutinized by comparing with single metal gate (SMG) CGT/SGT MOSFET. Moreover, the effect of technology parameters variations workfunction difference has also been presented in terms of gate bias, drain bias, transconductance and drain conductance. Results reveal that the DMG SGT/CGT devices offer superior characteristics as compared to single material gate CGT/SGT devices. A good agreement between modeled and simulated results has also been obtained thus providing the validity of proposed model."
}
@article{Subramaniam201225,
title = "Leakage reduction through optimization of regular layout parameters",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "25 - 33",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002187",
author = "Anupama R. Subramaniam and Ritu Singhal and Chi-Chao Wang and Yu Cao",
keywords = "Regular layout optimization",
keywords = "Restrictive design rules",
keywords = "Non-rectangular gate",
keywords = "Critical dimension",
keywords = "Leakage",
keywords = "Process variation",
abstract = "Regular layouts that follow restrictive design rules are essential to robust CMOS design in order to alleviate many manufacturing induced effects, such as the effect of non-rectangular gate (NRG) due to sub-wavelength lithograph. NRG dramatically increases the leakage current by more than 15X compared to that of ideal physical layout. To mitigate such a penalty, we developed a technique to optimize regular layout through restrictive design rule parameters and to benchmark post-lithography circuit performance. We propose a procedure to systematically optimize key layout parameters in regular layout to minimize the leakage energy with minimal over head to active energy, circuit speed and area. The proposed layout optimization technique is demonstrated with a 65 nm technology and projected for 45 nm and 32 nm technology nodes. Experimental results show that more than 70% reduction in leakage can be achieved with area penalty of ∼10% and 9–12% overhead on circuit speed and active energy."
}
@article{Safari201234,
title = "A novel low voltage very low power CMOS class AB current output stage with ultra high output current drive capability",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "34 - 42",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002175",
author = "Leila Safari and Seyed Javad Azhari",
keywords = "Current output stage",
keywords = "Current mode",
keywords = "Current mode amplifier",
keywords = "High current drive capability",
keywords = "High output current",
keywords = "Low voltage class AB current output stage",
abstract = "In this paper a novel low voltage (LV) very low power (VLP) class AB current output stage (COS) with extremely high linearity and high output impedance is presented. A novel current splitting method is used to minimize the transistors gate–source voltages providing LV operation and ultra high current drive capability. High linearity and very high output impedance are achieved employing a novel resistor based current mirror avoiding conventional cascode structures to be used. The operation of the proposed COS has been verified through HSPICE simulations based on TSMC 0.18 μm CMOS technology parameters. Under supply voltage of ±0.7 V and bias current of 5 μA, it can deliver output currents as high as 14 mA with THD better than −53 dB and extremely high output impedance of 320 MΩ while consuming only 29 μW. This makes the proposed COS to have ultra large current drive ratio (Ioutmax/Ibias or the ratio of peak output current to the bias current of output branch transistors) of 2800. By increasing supply voltage to ±0.9 V, it can deliver extremely large output current of ±24 mA corresponding to 3200 current drive ratio while consuming only 42.9 μW and exhibiting high output impedance of 350 MΩ. Interestingly, the proposed COS is the first yet reported one with such extremely high output current and a THD even less than −45 dB. Such ultra high current drive capability, high linearity and high output impedance make the proposed COS an outstanding choice for LV, VLP and high drive current mode circuits. The superiority of the proposed COS gets more significance by showing in this work that conventional COS can deliver only ±3.29 mA in equal condition. The proposed COS also exhibits high positive and negative power supply rejection ratio (PSRR+/PSRR−) of 125 dB and 130 dB, respectively. That makes it very suitable for LV, VLP mixed mode applications. The Monte Carlo simulation results are provided, which prove the outstanding robust performance of the proposed block versus process tolerances. Favorably the proposed COS resolves the major limitation of current output stages that so far has prevented designing high drive current mode circuits under low supply voltages. In brief, the deliberate combination of so many effective novel methods presents a wonderful phenomenal COS block to the world of science and engineering."
}
@article{Crepaldi201243,
title = "Low-voltage, low-power Vt independent voltage reference for bio-implants",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "43 - 49",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002242",
author = "Paulo Cesar Crepaldi and Tales Cleber Pimenta and Robson Luiz Moreno and Leonardo Breseghello Zoccal and Luis Henrique de Carvalho Ferreira",
keywords = "Voltage reference",
keywords = "Composite transistor",
keywords = "Weak inversion",
keywords = "Low-voltage",
keywords = "Low-power",
abstract = "Biomedical electronics trends focus mainly on portability, miniaturization, connectivity, humanization, security and reliability. In this scenario, digital, low-cost CMOS technology plays a key role, especially in implementing complex systems into small devices with no batteries that can even be implanted in humans. Due to patient safety, the implanted devices are faced with challenges: device operation temperature and the RF power link must be kept extremely low.
By using proper topologies, the whole system can be designed to operate in low-voltage and low-power modes to maintain low temperature and avoid tissue thermal hazards. In this paper, a voltage reference is proposed which can operate at as low as 500 mV with power consumption less than 100 nW. Furthermore, the proposed topology, based on composite transistors operating in weak inversion, shows a good rejection to threshold voltage Vt, which is an inherent CMOS dispersion parameter. Simulation results using the process corners show that the Vt dependence can be reduced to less than ±2% (3σ) at the body temperature and the PSRR can be as large as 65 dB for higher frequencies. One of the key features of the circuit is its simple design."
}
@article{FernándezMartínez201250,
title = "Simulation methodology for dose effects in lateral DMOS transistors",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "50 - 56",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002230",
author = "P. Fernández-Martínez and F.R. Palomo and S. Díez and S. Hidalgo and M. Ullán and D. Flores and R. Sorge",
keywords = "Total ionising dose (TID)",
keywords = "Power LDMOS transistors",
keywords = "TCAD simulation",
keywords = "High energy physics (HEP) experiments",
keywords = "Radiation effects",
abstract = "Due to the increasing interest on laterally diffused MOS (LDMOS) transistors as a part of power electronics in the high energy physics (HEP) experiments, the effect of total ionising dose (TID) on their electrical performances has been experimentally measured. The analysis of the experimental results requires the aid of physics-based simulations to study the impact of TID effects on the LDMOS drift oxide layer. In this work, a simulation methodology is developed in order to analyse the changes in the electric field distribution as a consequence of the TID induced trapped charge, and its relationship with the technological parameters and the bias conditions. The simulation results are compared with the experimental data."
}
@article{Shi201257,
title = "Design of a hiccup mode over-current protection circuit for DC–DC switching converters",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "57 - 62",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002217",
author = "Ling-feng Shi and Xiang-yu Mao and Hui-sen He and Fu-bo Liu and Xin-quan Lai",
keywords = "DC–DC converter",
keywords = "Over-current protection",
keywords = "Hiccup mode",
keywords = "Digital soft-start",
abstract = "In the paper an improvement hiccup mode over-current protection circuit is proposed and successfully applied in a typical current-mode DC–DC switching converter. It greatly reduces the circuit power consumption in prolonged overload conditions and can provide smooth self-recovery once the overload condition is removed. By reducing the switching frequency and over-current threshold value, it further improves the effect of over-current protection. The power consumption and implementation area are minimized by digital control. By simulation and verification with HSPICE, the output average current is only 16.8% of the conventional over-current mode in continuous over-current conditions. The presented circuits can automatically recover with the maximum load (5 A) when the overload is removed."
}
@article{Liu201263,
title = "The impact of Miller and coupling effects on single event transient in logical circuits",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "63 - 68",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002357",
author = "Baojun Liu and Li Cai and Xiaokuo Yang and Hongtu Huang and Peng Bai and Weidong Peng",
keywords = "Single event transient",
keywords = "Miller feedback",
keywords = "Coupling effect",
keywords = "Harden",
abstract = "With feature size scaling down, Miller feedback effects of gate-to-drain capacitance for transistors and coupling effects between interconnects will dramatically affect single event transient (SET) generation and propagation in combinational logic circuits. Two ways of ICs are arranged: linear and “S” types. For pulse width and delay time, SET propagations in two layouts of digital circuits are compared under considering the coupling effects between interconnects. An analytical model is used to describe the impact of Miller and coupling effects on SET propagation. A criterion for SET occurrence in digital circuits with effects of coupling and Miller feedback is presented. The influence of temperature and technology node on SET generation and propagation is analyzed. The results indicate that (1) the existence of these effects will improve the critical charge for SET generation and also reduce the estimated SER, and (2) the way of “S” type is more immune to SET than the scheme of linear."
}
@article{Farouk201269,
title = "A low-voltage low-power CMOS fully differential linear transconductor with mobility reduction compensation",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "69 - 76",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002345",
author = "Tamer Farouk and Ahmed Nader Mohieldin and Ahmed Hussien Khalil",
keywords = "Transconductor",
keywords = "Low-voltage",
keywords = "Low-power",
keywords = "Nonlinearity",
keywords = "Gm-C filters",
keywords = "Common-mode feedback (CMFB)",
keywords = "Fully differential",
keywords = "CMOS",
abstract = "A highly linear fully differential CMOS transconductor architecture based on flipped voltage follower (FVF) is proposed. The linearity of the proposed architecture is improved by mobility reduction compensation technique. The simulated total harmonic distortion (THD) of the proposed transconductor with 0.4Vpp differential input is improved from −42 dB to −55 dB while operating from 1.0 V supply. As an example of the applications of the proposed transconductor, a 4th-order 5 MHz Butterworth Gm-C filter is presented. The filter has been designed and simulated in UMC 130 nm CMOS process. It achieves THD of −53 dB for 0.4Vpp differential input. It consumes 345 μw from 1.0 V single supply. Theoretical and simulated results are in good agreement."
}
@article{Zandrahimi201277,
title = "Two effective methods to detect anomalies in embedded systems",
journal = "Microelectronics Journal",
volume = "43",
number = "1",
pages = "77 - 87",
year = "2012",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002369",
author = "Mahroo Zandrahimi and Hamid R. Zarandi and Mohammad H. Mottaghi",
keywords = "Anomaly detection",
keywords = "Fault detection",
keywords = "Embedded systems",
keywords = "Fault coverage",
keywords = "Sensor data",
abstract = "Current-day embedded systems are very vulnerable to faults and defects. Anomaly detection is often the primary means of providing early indication of faults and defects. This paper presents two methods for detecting anomalies in embedded systems. The first method, buffer based detector, constructs a buffer consisting of events from a stream of data considered to be normal. Consequently, during test stage, if an event does not exist in the buffer, a miss will happen. An anomaly exists in test data provided that the hit rate of the buffer does not reach a predefined threshold. The second method namely probabilistic detector employs the probability of data events to evaluate the behavior of system. In order to measure the probability of events in the system, sampling of two events with distinct distance is done. Eventually, during test stage, the probability of events can be measured. An anomaly exists in test data provided that this probability does not reach a predefined threshold. A comparison between these two methods and other typical methods has been done based on detection coverage, area overhead and delay overhead. The experiments on 112 standard benchmarks show that the proposed methods can detect 100% of anomalies. Also, the area overhead of the proposed detectors grows linearly, while the area overhead of other typical detectors grows exponentially by the increase in one of the detector's parameters."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00226-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002266",
key = "tagkey2011IFC"
}
@article{Beluch20111321,
title = "Low power digital TTL command for 1 bit 60 GHz RF MEMS phase shifter",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1321 - 1326",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002102",
author = "Thomas Beluch and Daniela Dragomirescu and Vincent Puyal and Robert Plana",
keywords = "RF MEMS",
keywords = "MEMS",
keywords = "Boost converter",
keywords = "Phase shifter",
keywords = "Smart antenna",
abstract = "This paper presents a circuit used to actuate Radio Frequency MicroElectroMechanical Systems (RF MEMS) based phase shifters for 60 GHz beam forming. Wireless transmission in the 60 GHz band show a dramatic free space loss, thus making it mandatory to use antennas with high gain in a desired direction. Beam forming is then necessary to optimize the link budget between communicating nodes. Antenna arrays can be used for beam forming. The work done at LAAS was aiming to provide RF MEMS based phase shifters working with a standard digital command. RF MEMS commonly have high actuation voltages usually obtained with charge pumps. This paper presents a full 1 bit phase shifter with a digital translation part, an analog DC–DC converter, and an RF MEMS based loaded line phase shifter for 60 GHz signals. This converter is built using boost converters as an alternative to the use of charge pumps for driving RF MEMS in the field of wireless communications. Boost converters, despite relatively high current peaks, allow shorter settling times compared to charge pumps."
}
@article{HoushmandKaffashian20111327,
title = "Impact of NBTI on performance of domino logic circuits in nano-scale CMOS",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1327 - 1334",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001984",
author = "M. Houshmand Kaffashian and R. Lotfi and K. Mafinezhad and H. Mahmoodi",
keywords = "Dynamic logic",
keywords = "Negative bias temperature instability (NBTI)",
keywords = "Reliability",
abstract = "Negative Bias Temperature Instability (NBTI) in pMOS transistors has become a major reliability concern in the state-of-the art digital circuit design. This paper discusses the effects of NBTI on 32 nm technology high fan-in dynamic OR gate, which is widely used in high-performance circuits. The delay degradation and power dissipation of domino logic, as well as the Unity Noise Gain (UNG), are analyzed in the presence of NBTI degradation. We have shown the degradation in the output inverter pMOS transistor of the domino gate has a dominant impact on the delay in comparison with the keeper impact. Based on this analysis we have proposed that upsizing just the output inverter pMOS transistor can compensate for the NBTI degradation. Moreover, the impact of tuning the duty cycle of the clock has been investigated. It has been shown that although the keeper and the precharge transistors experience more NBTI degradation by increasing the low level in the clock signal, the total performance of the circuit will improve. We have also proposed an adaptive compensation technique based on Forward Body Biasing (FBB), to recover the performance of the aged circuit."
}
@article{Cho20111335,
title = "A 10-bit 30-MS/s successive approximation register analog-to-digital converter for low-power sub-sampling applications",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1335 - 1342",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001959",
author = "Young-Kyun Cho and Young-Deuk Jeon and Jae-Won Nam and Jong-Kee Kwon",
keywords = "Successive approximation register (SAR) analog-to-digital converter (ADC)",
keywords = "Bootstrapped switch",
keywords = "Merged-capacitor switching",
keywords = "Asynchronous clock",
keywords = "Dynamic gate biasing",
abstract = "A 10-bit 30-MS/s successive approximation register analog-to-digital converter (ADC), which is suitable for low-power sub-sampling applications, is presented. Bootstrapped switches are used to enhance the sampling linearity at the high input frequency. The proposed ADC adopts a binary-weighted split-capacitor array with the energy efficient switching procedure and includes an asynchronous clock scheme to yield more power and speed-efficiency. The ADC is fabricated in a 65 nm complementary metal-oxide-semiconductor technology and occupies an active area of 0.07 mm2. The differential and integral nonlinearities of the ADC are less than 0.82 and 1.13 LSB, respectively. The ADC shows a signal-to-noise-distortion ratio of 56.60 dB, a spurious free dynamic range of 73.35 dB, and an effective number of bits (ENOB) of 9.11-bits with a 2.5-MHz sinusoidal input at 30-MS/s. It exhibits higher than 8.86 ENOB for input frequencies up to 78-MHz. The ADC consumes 0.85 mW at a 1.1 V supply and achieves a figure-of-merit of 51 fJ/conversion-step."
}
@article{Saha20111343,
title = "ASIC design of a high speed low power circuit for factorial calculation using ancient Vedic mathematics",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1343 - 1352",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100190X",
author = "P. Saha and A. Banerjee and A. Dandapat and P. Bhattacharyya",
keywords = "Vedic multiplier",
keywords = "Incrementer",
keywords = "Zero detectors",
keywords = "Decrementer",
keywords = "Factorial design",
keywords = "High speed.",
abstract = "ASIC design of a high speed low power circuit for factorial calculation of a number is reported in this paper. The factorial of a number can be calculated using iterative multiplication by incrementing or decrementing process and iterative multiplication can be computed through parallel implementation methodology. Parallel implementation along with Vedic multiplication methodology for calculation of factorial of a number ensures significant reduction in propagation delay and switching power consumption due to reduction of stages in multiplication process, in comparison with the conventionally used Vedic multiplication methodologies like ‘Urdhva-tiryakbyham’ (UT) and ‘Nikhilam Navatascaramam Dasatah’ (NND) based implementation methodology. Transistor level implementation was carried out using spice specter with standard 90 nm CMOS technology and the results were compared with the above mentioned conventional methodologies. The propagation delay for the calculation of 4-bit factorial of a number was only ∼42.13 ns while the power consumption of the same was ∼58.82 mW for a layout area of ∼6 mm2. Improvement in speed was found to be ∼33% and ∼24% while corresponding reduction of power consumption in ∼34.48% and ∼24% for the factorial calculation circuitry in comparison with UT and NND based implementations, respectively."
}
@article{ArashMirhaj20111353,
title = "High speed sample and hold design using closed-loop pole-zero cancelation",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1353 - 1358",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002163",
author = "S. Arash Mirhaj and Arashk Norouzpour-Shirazi and Shahin Jafarabadi-Ashtiani and Omid Shoaei",
keywords = "Analog integrated circuits",
keywords = "Sample and hold circuits",
keywords = "Low power design",
keywords = "Pipeline",
keywords = "Analog to digital circuits",
abstract = "A new closed loop Sample-and-Hold (S&H) architecture is proposed for pipeline analog-to-digital converter (ADC) that breaks the precision-speed-power trade off by means of canceling out the first closed loop pole. This pole-canceling results in widening the bandwidth of the S&H up to the second pole. In this architecture, two amplifiers are used: one for accuracy with little power consumption, another one for high-speed response, which consumes most of the total power. Exploiting these two amplifiers remedies some of the tradeoffs and limitations of opamp design in S&H circuits. Simulated by HSPICE with a standard BSIM3v3 0.13 μm technology, the S&H achieves 80 dB SFDR for a 1.6 Vppd output at 500 MHz sampling rate."
}
@article{GarcíaLeyva20111359,
title = "New redundant logic design concept for high noise and low voltage scenarios",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1359 - 1369",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001960",
author = "Lancelot García-Leyva and Dennis Andrade and Sergio Gómez and Antonio Calomarde and Francesc Moll and Antonio Rubio",
keywords = "Redundancy",
keywords = "Fault tolerance",
keywords = "High noise",
keywords = "Robustness",
keywords = "Low voltage",
keywords = "Error probability",
abstract = "This paper presents a new redundant logic design concept named Turtle Logic (TL). It is a new probabilistic logic method based on port redundancy and complementary data, oriented toward emerging technologies beyond CMOS, where the thermal noise could be predominant and the reliability of the future circuits could be limited. The TL is a technology independent method, which aims to improve error tolerance when these errors are caused by noise within logic and functional units, sequential elements, and in general synchronous pipeline Finite State Machines. Turtle Logic operation is based on the consistency relation of redundant inputs. In the case of discrepancy, the output of the system keeps the previous value, therefore avoiding the propagation of incorrect inputs. A two's complement 8×8-bit pipelined Baugh–Wooley multiplier is implemented, on which several experiments reveal a perfect tolerance (0% errors) to single line discrepancies for both primary and internal nodes, with a cost of lost clock periods between 6% and 25%. The error ratio for the proposed Turtle Logic implementation with double discrepancies in both true and complementary lines are lower than 0.1% when the noise affects primary input nodes, and lower than 0.9% when the noise affects internal nodes."
}
@article{ElMoursy20111370,
title = "Asynchronous switching for low-power networks-on-chip",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1370 - 1379",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002126",
author = "Magdy A. El-Moursy and Heba A. Shawkey",
keywords = "NoC",
keywords = "Power dissipation",
keywords = "Asynchronous",
abstract = "Asynchronous switching is proposed to achieve low power Network on Chip. Asynchronous switching reduces the power dissipation of the network if the activity factor of the data transfer between two ports α data is less than A α c + B α clk . Closed form expressions for power dissipation of different network topologies are provided for both synchronous and asynchronous switching. The expressions are technology independent and are used for power estimation. Asynchronous switching is compared with synchronous switching for different network densities N / L c XL c . The area of the asynchronous switch is 50% greater than the area of the synchronous switch. However, the power dissipation of asynchronous switching decreased by up to 70.8% as compared to the power dissipation of the conventional synchronous switching for Butter-Fly Fat Tree (BFT) topology. Asynchronous switching is more efficient in CLICHE topology than in both BFT and Octagon topologies achieving higher power reduction 75.7%. Asynchronous switching becomes more efficient as technology advances and network density increases. A reduction in power dissipation reaches 82.3% for 256 IPs with the same chip size. Even with clock gating, asynchronous switching achieves significant power reduction 77.7% for 75% clock activity factor."
}
@article{Zia20111380,
title = "3D NOC for many-core processors",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1380 - 1390",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002096",
author = "Aamir Zia and Sachhidh Kannan and H. Jonathan Chao and Garrett S. Rose",
keywords = "3D integration",
keywords = "CMP",
keywords = "Clos network",
keywords = "Through-silicon vias",
keywords = "Scalability",
keywords = "Low-power",
abstract = "With an increasing number of processors forming many-core chip multiprocessors (CMP), there exists a need for easily scalable, high-performance and low-power intra-chip communication infrastructure for emerging systems. In CMPs with hundreds of processing elements, 3D integration can be utilized to shorten long wires forming communication links. In this paper, we propose a Clos network-on-chip (CNOC) in conjunction with 3D integration as a viable network topology for many core CMPs. The primary benefit of 3D CNOC is scalability and a clear upper bound on power dissipation. We present the architectural and physical design of 3D CNOC and compare its performance with several other topologies. Comparisons are made among several topologies (fat tree, flattened butterfly, mesh and Clos) showing the power consumption of a 3D CNOC increases only minimally as the network size is scaled from 64 to 512 nodes relative to the other topologies. Furthermore, in a 512-node system, 3D CNOC consumes about 15% less average power than any other topology. We also compare 3D partitioning strategies for these topologies and discuss their effect on wire delay and the number of through-silicon vias."
}
@article{Djeffal20111391,
title = "A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1391 - 1395",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001972",
author = "F. Djeffal and T. Bendib and M.A. Abdi",
keywords = "Nanoscale",
keywords = "DG MOSFET",
keywords = "Subthreshold",
keywords = "Traps",
keywords = "Free carriers",
abstract = "In the present paper, an accurate surface potential and the subthreshold swing (S) models including the free carriers and interfacial traps effect have been presented. Exploiting these new device models, we have found that the incorporation of the free carriers' effect leads to the improvement of the subthreshold swing accuracy in comparison with the classical models. The inclusion of the free carriers has a major role in determining the subthreshold parameters behavior due to the extra surface potential generated at the interface, which may affect the electric field and carriers transport in weak inversion regime. We have demonstrated that S is very sensitive to the short channel lengths (L less than 40 nm). For a device with a small silicon body thickness (tsi=5 nm), S is increased dramatically with the reduction of the channel length. The developed approaches are verified and validated by the good agreement found with the 2D numerical simulations for a wide range of device parameters and bias conditions. The proposed models can also be implemented into devices simulators, such as SPICE, to study the degradation of nanoscale digital CMOS-based circuits."
}
@article{Ning20111396,
title = "The impact of total ionizing radiation on body effect",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1396 - 1399",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001935",
author = "Bingxu Ning and Zhiyuan Hu and Zhengxuan Zhang and Zhangli Liu and Ming Chen and Dawei Bi and Shichang Zou",
keywords = "Body effect factor",
keywords = "Total ionizing dose (TID)",
keywords = "RINCE",
keywords = "Charge conservation principle",
abstract = "A new phenomenon, for the first time, shows that radiation-induced body effect factor decrease in NMOS transistors is presented. The results indicate that body effect factor shift decreases as the total ionizing dose (TID) level increases in NMOS transistors, especially in the narrow-channel ones, which can be considered as one of the radiation-induced narrow-channel effect (RINCE). A first-order model is developed by applying charge conservation principle. Good agreement is obtained by comparing the modeling with experimental results. Finally, some implications to mitigate the RINCE effect are discussed."
}
@article{Beheshtian20111400,
title = "Toxic CO detection by B12N12 nanocluster",
journal = "Microelectronics Journal",
volume = "42",
number = "12",
pages = "1400 - 1403",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.10.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002205",
author = "Javad Beheshtian and Zargham Bagheri and Mohammad Kamfiroozi and Ali Ahmadi",
keywords = "Carbon monoxide",
keywords = "Boron nitride nanocluster",
keywords = "Density functional theory",
keywords = "Adsorption",
abstract = "We have studied the adsorption of carbon monoxide (CO) on boron nitride nanocluster (B12N12) using density functional theory (DFT) through three different functionals. In contrary to the pristine boron nitride and carbon nanotubes, we found that CO adsorption can induce significant change in the cluster electronic properties, suggesting that B12N12 may be a potential sensor for CO detection. It was also found that the geometry parameters of the obtained structures are not sensitive to the used functional, while the energy values show strong dependency. The results indicated that the most stable configuration of the CO/cluster is a vertical orientation of the CO molecule on B12N12 cluster so that the C atom of CO is close to the B atom of the cluster with adsorption energy of 0.15–0.34 eV, based on the three functionals."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00202-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211002023",
key = "tagkey2011IFC"
}
@article{AziziMazreah20111187,
title = "New configuration memory cells for FPGA in nano-scaled CMOS technology",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1187 - 1207",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001571",
author = "Arash Azizi Mazreah and Mohammad T. Manzuri Shalmani",
keywords = "Configuration memory cell",
keywords = "Particle strike",
keywords = "Critical charge",
keywords = "Soft error rate",
keywords = "Leakage current",
keywords = "Cell area",
abstract = "In nano-scaled CMOS technology, the reduction of soft error rate and leakage current are the most important challenges in designing Field Programmable Gate Arrays (FPGA). To overcome these challenges, based on the observations that most configuration bit-streams of FPGA are zeros across different designs and that configuration memory cells are not directly involved with signal propagation delays in FPGA, this paper presents three new low-leakage and hardened configuration memory cells for nano-scaled CMOS technology. These cells are completely hardened when zeros are stored in the cells and cannot flip from particle strikes at the sensitive cell nodes. These cells retain their data with leakage currents and positive feedback without a refresh cycle. Simulation results show that the proposed cells are working correctly during their configuration and idle cycles and that our cells have a lower soft error rate and leakage current in 22-nm as well as in 65-nm technologies."
}
@article{Huang20111208,
title = "Differential bidirectional transceiver for on-chip long wires",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1208 - 1215",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001686",
author = "Hong-Yi Huang and Ruei-Iun Pu",
keywords = "Bidirectional transceiver",
keywords = "Interconnection",
keywords = "Current mode",
abstract = "This work presents a differential bidirectional transceiver (DBT) for on-chip long wires. To enhance operating speed and reduce power consumption, the voltage swing on the wire is reduced using current-mode scheme. Consequently, our design performs higher data rate when wire length is extended. Moreover, adoption of differential scheme with a moderate tradeoff of area effectively lowers power supply noise and common mode noise. The receiver adopts four input differential pairs along with current summation circuit to evaluate small signal differences of every that state resulted from transmitting different data. Simulations using 0.18-μm device model indicates that the total input to output delay over a 5 mm long wire is 0.96 ns, with a power consumption of 8.724 mW at a speed of 1.2 Gbps and a maximum achievable data rate of 1.5 Gbps. A test chip is realized and successfully verifies the performance of the transceiver."
}
@article{Goosen20111216,
title = "Reducing data dependent jitter utilising adaptive FIR pre-emphasis in 0.18 μm CMOS",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1216 - 1224",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001704",
author = "Marius Goosen and Saurabh Sinha",
keywords = "High speed serial link",
keywords = "FIR pre-emphasis",
keywords = "Adaptive pre-emphasis",
keywords = "0.18 μm CMOS",
keywords = "Data dependant jitter",
keywords = "Backplane serial link",
abstract = "Due to advances of technology in multimedia applications in recent years, the demand for high user end bandwidth point to point links has increased significantly. Jitter requirements have become ever more stringent with the increase in high speed serial link data rates. The introduced jitter severely degrades the performance of the high speed serial link. This paper introduces an adaptive FIR pre-emphasis technique as a means to alleviate the problem of limited off-chip bandwidth introducing data dependant jitter. Mathematical as well as SPICE simulation results are presented, together with the implemented integrated circuit layouts of the novel 0.18 μm CMOS implementation. Limited results from the experimentally tested IC are also presented and discussed. The adaptive pre-emphasis technique employed results in a simulated data dependant jitter reduction to less than 12.5% of a unit interval at a data rate of 5 Gb/s and a modelled 30″ FR-4 backplane copper channel."
}
@article{Nam20111225,
title = "A 12-bit 200-MS/s pipelined A/D converter with sampling skew reduction technique",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1225 - 1230",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001698",
author = "Jae-Won Nam and Young-Deuk Jeon and Young-Kyun Cho and Jong-Kee Kwon",
keywords = "Pipelined analog-to-digital converter (ADC)",
keywords = "Sampling skew reduction",
abstract = "This paper presents a 12-bit 200-MS/s dual channel pipeline analog-to-digital converter (ADC). The ADC is featured with a digital timing correction for reducing a sampling skew and the capacitor swapping for suppressing nonlinearities at the first stage in the pipelined ADC. The prototype ADC occupies 0.8×1.4 mm2 in a 65-nm CMOS technology. The differential nonlinearity is less than 1.0 least significant bit with a 200 MHz sampling frequency. With a sampling frequency of a 200-MS/s and an input of a 2.4 MHz, the ADC, respectively, achieves a signal to noise-and-distortion ratio and a spurious-free dynamic range of 61.49 dB–70.71 dB while consuming of 112 mW at a supply voltage of 1.1 V."
}
@article{Mirsaeedi20111231,
title = "A statistical yield optimization framework for interconnect in double patterning lithography",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1231 - 1238",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100173X",
author = "Minoo Mirsaeedi and Mohab Anis",
keywords = "Double patterning lithography",
keywords = "Overlay control",
keywords = "Yield optimization",
keywords = "Design for manufacturability",
abstract = "In double patterning lithography, within-layer overlay error results in critical dimensions variability. Overlay error has been considered as a systematic source of variation; however, it is segueing into a random error for technology nodes smaller than 45-nm. Therefore, statistical design techniques should be applied to estimate and optimize the yield loss due to overlay error. In this paper, we study the impacts of overlay error on functional and parametric yields of interconnects in 32- and 22-nm technologies. A yield optimization method is applied to derive optimal width and spacing of interconnects for mentioned technologies. Experimental results show that parametric yield loss becomes more problematic in 22-nm technology node compared with the functional yield loss. Moreover, we show that DFM techniques such as wire spreading are necessary to realize the desirable parametric constraints in 22-nm node. Our analysis reveals that overlay electrical impact increases considerably in DPL in the presence of congestion."
}
@article{Spasos20111239,
title = "On the investigation of a reliable actuation control method for ohmic RF MEMS switches",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1239 - 1251",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001728",
author = "Michalis Spasos and Rajagopal Nilavalan",
keywords = "RF-MEMS actuation control",
keywords = "Tailored pulse",
keywords = "Taguchi optimization",
keywords = "Resistive damping",
abstract = "Efficient control of RF MEMS switches is a very important issue as it is correlated to main failure mechanisms/modes such as the impact force and bouncing phenomena, which degrade their dynamic performance and longevity. This paper presents the control of specific ohmic RF MEMS switches under three different actuation modes, a tailored pulse optimization method based on Taguchi's technique (voltage mode actuation control), resistive damping (charge mode actuation control) and finally the Hybrid actuation mode, which is a combination of the tailored pulse, the resistive damping and Taguchi's optimization technique. Coventorware simulations indicate that under optimized Tailored pulse and Hybrid actuation modes, the impact velocity is reduced by around 90%, the initial impact force by around 75% and the maximum bouncing displacement during the release phase by around 95%, while the switching speed is increased by around 20% compared with the step pulse control mode. The resistive damping control mode is inappropriate for this type of switch and only partial improvement during the pull-down phase has been achieved. Finally, a comparison between Hybrid and optimized tailored modes shows that Hybrid actuation mode excels with better switching characteristics and most importantly offers immunity to manufacturing and operation tolerances."
}
@article{Chen20111252,
title = "Design of fractal-based CMOS bandpass filter for WirelessHD system",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1252 - 1256",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001716",
author = "Wei-Yu Chen and Shoou-Jinn Chang and Min-Hang Weng and Cheng-Yuan Hung",
keywords = "Fractal",
keywords = "Dual-mode",
keywords = "mm-wave",
keywords = "CMOS",
keywords = "WirelessHD",
abstract = "We proposed a fractal-based dual-mode bandpass filter (BPF) using a standard CMOS process for application of 60 GHz WirelessHD system. We first investigated the effect of coupling feedlines of I/O ports set at different layer of M3 and M4 layer on the transmission loss of the resonator, and verified the nature coupling of fractal-based dual-mode filter. Experimental result shows that the designed filter with a fractional-bandwidth (FBW) of 23%, an insertion loss about 7 dB and return loss larger than 10 dB. Additionally, two transmission zeros are appeared at the passband edges, thus much improve the selectivity of the proposed CMOS BPF. The result indicates that fractal-based structure is feasible and can meet the requirement in the mm-wave application."
}
@article{Lu20111257,
title = "Thermal analysis of high power LED package with heat pipe heat sink",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1257 - 1262",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001765",
author = "Xiang-you Lu and Tse-Chao Hua and Yan-ping Wang",
keywords = "High-power LED",
keywords = "Heat pipe",
keywords = "Thermal resistance",
keywords = "Junction temperature",
abstract = "The goal of this study is to improve the thermal characteristics of high power LED (light-emitting diode) package using a flat heat pipe (FHP). The heat-release characteristics of high power LED package are analyzed and a novel flat heat pipe (FHP) cooling device for high power LED is developed. The thermal capabilities, including startup performance, temperature uniformity and thermal resistance of high power LED package with flat heat pipe heat sink have been investigated experimentally. The obtained results indicate that the junction temperature of LED is about 52 °C for the input power of 3 W, and correspondingly the total thermal resistance of LED system is 8.8 K/W. The impact of the different filling rates and inclination angles of the heat pipe to the heat transfer performance of the heat pipe should be evaluated before such a structure of heat pipe cooling system is used to cool high power LED system."
}
@article{Slimane20111263,
title = "A 0.9-V, 7-mW UWB LNA for 3.1–10.6-GHz wireless applications in 0.18- CMOS technology",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1263 - 1268",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001753",
author = "Abdelhalim Slimane and M. Trabelsi and M.T. Belaroussi",
keywords = "UWB",
keywords = "LNA",
keywords = "Low voltage",
keywords = "Low power",
keywords = "Wideband input matching",
keywords = "Current reuse technique",
abstract = "This paper presents a low-voltage and low-power CMOS low noise amplifier (LNA) for ultra-wideband (UWB) wireless applications. A cascade stage topology based on common source amplifier has been proposed to reduce the supply voltage of the proposed LNA. In addition, a high-pass filtering network is chosen instead of a Chebyshev band pass structure to simultaneously perform the wideband input matching and to improve the noise figure over the desired band. Using a 0.18 μ m CMOS process, the proposed LNA exhibit a state of the art performance consuming only 7 mW from a 0.9 V supply voltage. Post-layout simulation results show a power gain S21 of 13.5 dB with gain ripple of ±1.5 dB, in the frequency range of 3.1–10.6 GHz. The noise figure is below 4.6 dB with a minimum of 2.7 dB at 4.5 GHz. The input and output return losses S11 and S22 are better than −9 dB and −15 dB, respectively. The highest value of IP3 is −8 dBm obtained at 5 GHz. The active silicon area occupied by the UWB–LNA is only 0.59 mm2."
}
@article{LeiteRetes20111269,
title = "Evaluation of the full operational cycle of a CMOS transfer-gated photodiode active pixel",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1269 - 1275",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001741",
author = "Pedro F. Leite Retes and Frank Sill Torres and Davies W. de Lima Monteiro",
keywords = "Cameras",
keywords = "CMOS analog integrated circuits",
keywords = "Image sensors",
keywords = "Integrated optoelectronics",
keywords = "Photodiodes",
abstract = "In this paper we evaluate the full operational cycle of the active-pixel circuit for CMOS image sensors in which four field-effect transistors are suitably combined with an ordinary photodiode; meaning a vertical p–n junction, as opposed to photogates, and with no custom pinned layer. Although this circuit topology itself is not novel, this evaluation intends to shine new light on the use of regular photodiodes. They became largely in disuse in four-transistor image chips under earlier process and design circumstances because the fourth transfer-gate FET did not hold a constant signal long enough and not for a fixed time. Our aim is to investigate the full underlying operational regimen of the transfer gate to propose that a regular photodiode might again be a choice to consider in the four-transistor pixel configuration, not only in conventional imaging but also in dedicated optical applications. The use of an ordinary p–n junction photodiode is advantageous as it offers full compatibility with even elementary mainstream CMOS processes. This investigation resorts to experiments and models both with fabricated integrated pixels and with a macro-pixel circuit implementation."
}
@article{Mosaffa20111276,
title = "Designing robust threshold gates against soft errors",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1276 - 1289",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.011",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100187X",
author = "Mahdi Mosaffa and Fataneh Jafari and Siamak Mohammadi",
keywords = "Asynchronous circuits",
keywords = "Null Convention Logic (NCL)",
keywords = "Threshold gate",
keywords = "Soft error",
keywords = "Single Event Upset (SEU)",
abstract = "In applications where issues like power efficiency, high performance, and more noise tolerance are important, asynchronous design methodology can play a significant role. However, as a result of technology shrinkage, combinational asynchronous circuits have become vulnerable in presence of particle strikes. In this paper, we design robust quasi-delay insensitive (QDI) asynchronous circuits against soft errors. Null Convention Logic (NCL) gates used as one of the basic techniques in asynchronous circuits, are redesigned to increase their robustness against Single Event Upset (SEU). We analyze our design for various NCL structures and compare them with another design in Kuang et al. (2007) [4], and show that our proposed approach is more robust against SEU. The effect of some parameters such as power consumption, delay, and the influence of transistor sizing on soft error tolerance are discussed."
}
@article{Lee20111290,
title = "Efficient co-simulation framework enhancing system-level power estimation for a platform-based SoC design",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1290 - 1298",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001893",
author = "Je-Hoon Lee and Sang-Choon Kim and Young Hwan Kim and Kyoungrok Cho",
keywords = "Power analysis",
keywords = "Co-simulation",
keywords = "System-level modeling",
keywords = "Trace table",
keywords = "Transactor",
abstract = "This paper proposes a hardware–software (HW-SW) co-simulation framework that provides a unified system-level power estimation platform for analyzing efficiently both the total power consumption of the target SoC and the power profiles of its individual components. The proposed approach employs the trace-based technique that reflects the real-time behavior of the target SoC by applying various operation scenarios to the high-level model of target SoC. The trace data together with corresponding look-up table (LUT) is utilized for the power analysis. The trace data is also used to reduce the number of input vectors required to analyze the power consumption of large H/W designs through the trade-offs between the signal probability in the trace results and its effect on the power consumption. The effect of cache miss on power, occurring in the S/W program execution, is also considered in the proposed framework. The performance of the proposed approach was evaluated through the case study using the SoC design example of IEEE 802.11a wireless LAN modem. The case study illustrated that, by providing fast and accurate power analysis results, the proposed approach can enable SoC designers to manage the power consumption effectively through the reconstruction of the target SoC. The proposed framework maps all hardware IPs into FPGA. The trace based approach gets input vectors at transactor of the each IP and gets power consumption indexing a LUT. This hardware oriented technique reports the power estimation result faster than the conventional ones doing it at S/W level."
}
@article{Yousefi20111299,
title = "A model for carbon nanotube FETs in the ballistic limit",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1299 - 1304",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.08.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001881",
author = "R. Yousefi and M. Shabani",
keywords = "Carbon nanotube",
keywords = "Field effect transistor",
keywords = "Modeling",
keywords = "FETToy",
abstract = "As we know, a ballistic MOS-Like carbon nanotube FET can be simulated by using a self-consistent procedure between the charge and the Poisson equations. Because of the integral form of the charge equation, this model cannot be implemented in the commercially available circuit simulators, such as SPICE. In this paper, we propose an analytical solution for estimating the charge equation, so that the above mentioned procedure could be used in the aforementioned circuit simulators. We investigated the accuracy of the proposed model for various values of the physical parameters and biasing condition. Further investigations were performed in order to evaluate the model accuracy in the sub-threshold region and in presence of the short channel effects. The results of these investigations were compared with those obtained by some other models developed earlier in the literatures. All of these demonstrate superior accuracy of the proposed model with comparison to the other models."
}
@article{Dąbrowski20111305,
title = "A dual band-pass amplifier-filter circuit for simultaneous recording of spikes and local field potentials from live neuronal tissue using multielectrode arrays",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1305 - 1312",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001911",
author = "W. Dąbrowski and T. Fiutowski and P. Rydygier and P. Wiącek",
keywords = "Low-noise amplifier",
keywords = "Neural recording",
keywords = "Band-pass filter",
keywords = "CMOS amplifier",
abstract = "The paper presents the design and test results of a novel circuit with dual band-pass filter for simultaneous recording of Local Filed Potentials and spikes from individual neurons. Single readout channel is built of an input AC-coupling circuit with the cut-off frequency below 0.1 Hz, a low noise preamplifier and two parallel band-pass filters with nominal bandwidths from 2 Hz to 100 Hz and from 200 Hz to 2 kHz. The design is optimized for low noise, high dynamic range, and low power dissipation. The circuit has been designed and manufactured in a 0.35 μm CMOS process as a multichannel chip comprising also an analog multiplexer for serialization of the analog output signals."
}
@article{Zhang20111313,
title = "Test data compression using interval broadcast scan for embedded cores",
journal = "Microelectronics Journal",
volume = "42",
number = "11",
pages = "1313 - 1319",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001923",
author = "Ling Zhang and Ji-shun Kuang and Zhiq-qiang You",
keywords = "Test data compression",
keywords = "Embedded cores",
keywords = "Multiple scan chains",
abstract = "The paper proposes a new test data compression scheme for testing embedded cores with multiple scan chains. The new compression scheme allows broadcasting identical test data to several scan chains whenever the cells in the same depth are compatible for the current application test pattern. Thus, it efficiently utilizes the compatibility of the scan cells among the scan chain segments, increases test data run in broadcast mode and reduces test data volume and test application time effectively. It does not need complex compressing algorithm and costly hardware. Experimental results demonstrate the efficiency and versatility of the proposed method."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00178-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001789",
key = "tagkey2011IFC"
}
@article{Yang20111099,
title = "A synthesizable pseudo fractional-N clock generator with improved duty cycle output",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1099 - 1106",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001480",
author = "Wei-Bin Yang and Chang-Yo Hsieh",
keywords = "Synthesizable",
keywords = "Clock generator",
keywords = "Pseudo fractional-N",
keywords = "Duty cycle",
abstract = "A proposed synthesizable pseudo fractional-N clock generator with improved duty cycle output is presented by the pseudo fractional-N frequency synthesizer unit for SoC chips and the dynamic frequency scaling applications. The different clock frequencies can be generated by following the design flowchart. It has been fabricated in a 0.13 μm CMOS technology and work with a supply voltage of 1.2 V. According to measured results, the frequency range of the proposed synthesizable pseudo fractional-N clock generator is from 12.5 MHz to 1 GHz and the peak-to-peak jitter is less than 5% of the output period. Duty cycle error rate of the output clock frequency is 1.5% and the measured power dissipation of the pseudo fractional-N frequency synthesizer unit is 146 μW at 304 MHz."
}
@article{Chien20111107,
title = "Design and implementation of monostable multivibrators employing differential voltage current conveyors",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1107 - 1115",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001479",
author = "Hung-Chun Chien and Yu-Kang Lo",
keywords = "Differential voltage current conveyor",
keywords = "Monostable multivibrator",
keywords = "Active RC circuit designs",
keywords = "Electronic circuit designs",
abstract = "In this paper, two novel application circuits utilizing the differential voltage current conveyor (DVCC) are introduced and implemented. To the best knowledge of authors, this is the first reported monostable multivibrators employing DVCC device. Each presented circuit is constructed by single DVCC as the basic active building block together with a few passive components. Both of them can be operated via a positive-edge triggering signal to generate a pulse waveform with an adjustable width. The first one is a general monostable circuit. The second design is an improved construction, which shortens the recovery time for applying the consecutive triggering signals. The circuit operations are first described and then the non-ideal issues and design considerations of the proposed circuits are discussed. To demonstrate their feasibility, the presented circuits are simulated using circuit simulation program Is-Spice. Available commercial ICs and discrete components are used to implement the prototype circuits. Simulation and experimental results agree well with the theoretical analysis."
}
@article{Biolek20111116,
title = "Realization of electronically tunable voltage-mode/current-mode quadrature sinusoidal oscillator using ZC-CG-CDBA",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1116 - 1123",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001467",
author = "Dalibor Biolek and Abhirup Lahiri and Winai Jaikla and Montree Siripruchyanun and Josef Bajer",
keywords = "Active RC circuits",
keywords = "Sinusoidal oscillator",
keywords = "Z-copy controlled-gain current differencing buffered amplifier (ZC-CG-CDBA)",
abstract = "This paper presents a first of its kind canonic realization of active RC (ARC) sinusoidal oscillator with non-interactive/independent tuning laws, which simultaneously provides buffered quadrature voltage outputs and explicit quadrature current outputs. The proposed circuit is created using a new active building block, namely the Z-copy controlled-gain current differencing buffered amplifier (ZC-CG-CDBA). The circuit uses three resistors and two grounded capacitors, and provides independent/non-interactive control of the condition of oscillation (CO) and the frequency of oscillation (FO) by means of different resistors. Other advantageous features of the circuit are the inherent electronic tunability of the FO via controlling current gains of the active elements and the suitability to be employed as a low-frequency oscillator. A non-ideal analysis of the circuit is carried out and experimental results verifying the workability of the proposed circuit are included."
}
@article{Srivastava20111124,
title = "Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1124 - 1135",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001455",
author = "Viranjay M. Srivastava and K.S. Yadav and G. Singh",
keywords = "Cylindrical surrounding double-gate (CSDG) MOSFET",
keywords = "Double-gate (DG) MOSFET",
keywords = "Resistive and capacitive MOSFET model",
keywords = "Advanced design simulator (ADS)",
keywords = "Radio frequency",
keywords = "RF switch",
keywords = "CMOS switch",
keywords = "Cross talk",
keywords = "VLSI",
abstract = "In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET."
}
@article{Aznar20111136,
title = "A 0.18 μm CMOS transimpedance amplifier with 26 dB dynamic range at 2.5 Gb/s",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1136 - 1142",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001248",
author = "Francisco Aznar and Wolfgang Gaberl and Horst Zimmermann",
keywords = "CMOS analog integrated circuits",
keywords = "Duty cycle distortion",
keywords = "Dynamic range",
keywords = "Optical receivers",
keywords = "Transimpedance amplifiers",
abstract = "A new transimpedance amplifier (TIA) for 2.5 Gb/s optical communications fabricated in a standard 0.18 μm CMOS process is presented. The proposed TIA is based on a conventional structure with an inverting voltage amplifier and a feedback resistor, but incorporates a new technique to enhance the input dynamic range and to prevent the TIA from saturation at high input currents. According to electrical characterization the receiver shows an optical sensitivity of −26 dB m for a BER=10−12, assuming a responsivity of 1 A/W, and an optical power dynamic range above 26 dB. The power consumption of the core is only 10.6 mW at a single supply voltage of 1.8 V."
}
@article{Zlotnikov20111143,
title = "A 45 nm CMOS miniature phase shifter with constant amplitude response",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1143 - 1150",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001236",
author = "Tal Vitaly Zlotnikov and Ofir Degani and Igor Brouk and Yael Nemirovsky",
keywords = "Passive phase shifters",
keywords = "CMOS analog integrated circuits",
keywords = "Phased arrays",
abstract = "We present analysis, optimization, design and characterization of an integrated passive analog phase shifter at 24 GHz in a commercially available 45 nm RF-CMOS process. The design is based on a well-known RC bridge topology, which was optimized for maximum phase shift and minimal amplitude response variation versus phase and frequency. Phase is controlled by varying DC voltage on a varactor, resulting in 60° maximum phase shift with 0.1 dB amplitude variation at 24 GHz. The size of the phase shifter circuit excluding pads and input/output buffers is 40×50 μm2."
}
@article{Lou20111151,
title = "A green-switch controller IC for cascade buck–boost converter with seamless transition over entire input and load range",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1151 - 1163",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001224",
author = "Jia-Na Lou and Xiao-Bo Wu and Meng-Lian Zhao and Xiao-Lang Yan",
keywords = "DC power systems",
keywords = "Integrated circuit design",
keywords = "Power electronics",
keywords = "Switched mode power supplies",
abstract = "To raise the utilization ratio of lithium-ion battery in portable devices, a novel green-switch controller IC is proposed to constitute a 4-switch cascade buck–boost prototype, which is capable of outputting non-inverting step down and step up voltages. According to the relations between the input and output voltages through duty ratio, a finite state machine automatically determines the work method of converter namely buck method, boost method or transition method by combining peak and valley current programmed mode so as to improve the line regulation over the entire input voltage range. A three-phase seamless transition method is introduced into the controller. Its additional advantage is to lower output ripples. Furthermore, a special burst mode is added to reduce the power consumption during light-load operation. An elaborately designed circuitry and rigorous stability analysis further improves the seamless performance. The controller IC is designed and fabricated in 1.5 μm BCD (Bipolar-CMOS-DMOS) technology with an area of 8.75 mm2 and applied to a 2.7 V–4.2 V/3.3 V, maximum output power 1.65 W buck–boost converter. It features over 90% conversion efficiency during normal application and still remains over 80% under standby mode. The experimental results show that all functional and performance targets are successfully achieved as expected."
}
@article{Li20111164,
title = "Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1164 - 1168",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001212",
author = "Peicheng Li and Guangxi Hu and Ran Liu and Tingao Tang",
keywords = "Double-gate",
keywords = "MOSFET",
keywords = "Threshold voltage",
keywords = "Schottky-barrier",
abstract = "The threshold voltage, Vth of a double-gate (DG) Schottky-barrier (SB) source/drain (S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An analytic expression for surface potential is obtained by using Gauss's law and solving Poisson's equation, the results of which are compared with simulations, and good agreement is observed. Based on the potential model, a new definition for Vth is developed, and an analytic expression for Vth is obtained, including quantum mechanical effects and SB lowering effect. We find that Vth is very sensitive to the silicon body thickness, tsi. For a device with a small tsi (<3 nm), Vth increases dramatically with the reduction of tsi. Vth decreases with the increase of the back-gate oxide thickness, and with the increasing of the drain bias. All the results can be of great help to the ultra-large scale integrated-circuit (ULSI) designers."
}
@article{Jia20111169,
title = "A novel surface potential-based short channel MOSFET model for circuit simulation",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1169 - 1175",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001200",
author = "Kan Jia and Weifeng Sun and Longxing Shi",
keywords = "Compact model",
keywords = "MOSFET",
keywords = "Surface potential-based",
keywords = "Analytical approximation",
abstract = "In this paper a novel analytical approximation method for surface potential ( ψ s ) calculation in compact MOSFET model is presented. It achieves excellent accuracy and good calculation speed over all regions from accumulation to strong inversion. With this approximation method, a surface potential-based compact model for short channel MOSFET is developed. Comparison with measured data is also presented to validate the new model."
}
@article{Wei20111176,
title = "Design of a hard real-time multi-core testbed for energy measurement",
journal = "Microelectronics Journal",
volume = "42",
number = "10",
pages = "1176 - 1185",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000620",
author = "Tongquan Wei and Xiaodao Chen and Piyush Mishra",
keywords = "Dynamic voltage scaling",
keywords = "Hard real-time systems",
keywords = "Multi-core testbed",
keywords = "Rate monotonic scheduling",
keywords = "Task allocation and scheduling.",
abstract = "This paper presents a systematic methodology for designing a hard real-time multi-core testbed to validate and benchmark various rate monotonic scheduling (RMS)-based task allocation and scheduling schemes in energy consumption. The hard real-time multi-core testbed comprises Intel Core Duo T2500 processor with dynamic voltage scaling (DVS) capability and runs the Linux Fedora 8 operating system supporting soft real-time scheduling. POSIX threads API and Linux FIFO scheduling policy are utilized to facilitate the design and Dhrystone-based tasks are generated to verify the design. A LabView-based DAQ system is designed to measure the energy consumption of CPU and system board of the testbed. A case study of task allocation and scheduling algorithms is also presented that aim to optimize the schedule feasibility and energy consumed by the processor and memory module in the multi-core platform. The experience from the implementation is summarized to serve as potential guidelines for other researchers and practitioners."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00150-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001509",
key = "tagkey2011IFC"
}
@article{Bameri20111025,
title = "A linear-high range output power control technique for cascode power amplifiers",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1025 - 1031",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001443",
author = "H. Bameri and A. Hakimi and M. Movahhedi",
keywords = "Power control",
keywords = "Linearity",
keywords = "AM-PM distortion",
keywords = "Input dynamic range",
abstract = "In this paper a new linear power control technique is presented to control the output power of cascode power amplifiers. Using this technique the output power of power amplifier can be controlled from the maximum output power to −136 dBm, continuously. The characteristic of the output voltage versus control voltage is linear from −15.9 to 18.6 dBm (a range of 34.5 dB) of the output power. Also at this range the Amplitude Modulation to Phase Modulation (AM-PM) distortion is 43°. Furthermore, the input dynamic range is 0.373 V, which is less than the conventional techniques. Having a power controller in a low power path and a low input dynamic range leads to minimizing the controller dissipation and reduction of power added efficiency (PAE). The proposed technique is simulated using 0.13 μm CMOS process model using Advanced Design System and the results obtained are presented."
}
@article{Talukdar20111032,
title = "Generalized model for Memristor-based Wien family oscillators",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1032 - 1038",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001431",
author = "A. Talukdar and A.G. Radwan and K.N. Salama",
keywords = "Memristor",
keywords = "Wien oscillator",
keywords = "Nonlinear",
keywords = "Oscillating resistance",
keywords = "Dynamic poles",
abstract = "In this paper, we report the unconventional characteristics of Memristor in Wien oscillators. Generalized mathematical models are developed to analyze four members of the Wien family using Memristors. Sustained oscillation is reported for all types though oscillating resistance and time dependent poles are present. We have also proposed an analytical model to estimate the desired amplitude of oscillation before the oscillation starts. These Memristor-based oscillation results, presented for the first time, are in good agreement with simulation results."
}
@article{Mahyuddin20111039,
title = "Design and analysis of a low-swing driver scheme for long interconnects",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1039 - 1048",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.014",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100142X",
author = "Nor Muzlifah Mahyuddin and Gordon Russell and E. Graeme Chester",
keywords = "Low-swing driver",
keywords = "Low power",
keywords = "Long interconnects",
keywords = "Process variability",
abstract = "Market forces are continually demanding devices with increased functionality/unit area; these demands have been satisfied through aggressive technology scaling which, unfortunately, has impacted adversely on the global interconnect delay subsequently reducing system performance. Line drivers have been used to mitigate the problems with delay; however, these have large power consumption. A solution to reducing the power dissipation of the drivers is to use lower supply voltages. However, by adopting a lower power supply voltage, the performance of the line drivers for global interconnects is impaired unless low-swing signalling techniques are implemented. The paper describes the design of a low-swing signalling scheme which consists of a low-swing driver, called the nLVSD driver which is an improved version of the MJ-driver [1] designed by Juan A. Montiel-Nelson and Jose C. Garcia. Subsequently, both low-swing driver schemes are analysed and compared focusing on their power consumption and performance characteristics, which are the main issues in present day IC design. A comparison between the two driver schemes showed that the nLVSD driver exhibited a 34% improvement regarding power consumption and a 28% improvement in delay when driving a 10 mm length of interconnect. A comparison between the two schemes was also undertaken in the presence of ±3σ Process and Voltage (PV) variations. The analysis indicated that the nLVSD driver scheme was more robust than the MJ-driver with a 33% and 44% improvement with respect to power consumption and delay variations. In order to further improve the robustness of the nLVSD scheme against process variation, the scheme was further analysed to identify which process variables had the most impact on circuit delay and power consumption. For completeness the effects of process variation on interconnect delay and power consumption was also undertaken."
}
@article{Zid20111049,
title = "A high-speed four-phase clock generator for low-power on-chip SerDes applications",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1049 - 1056",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001315",
author = "Mounir Zid and Alberto Scandurra and Rached Tourki and Carlo Pistritto",
keywords = "Multiphase clocks",
keywords = "Four-phase clock generator",
keywords = "High-speed devices",
keywords = "Parallel architectures",
keywords = "Low-power architectures",
keywords = "SerDes",
abstract = "In this work we present a low-power, low-area and high-speed fully CMOS quadrature clock generator for on-chip SerDes applications. The device utilizes a couple of differential prescalers for high speed frequency division and four duty cycle adjusters to set the duty cycle of the produced clock signals at 50% of the clock period. The circuit was implemented with the STMicroelectronics 65 nm process technology using only 125 transistors and it occupies an active area of under 2.34 μm2. With a power supply of 1.1 V the complete circuit consumes 89.56 μW at room temperature."
}
@article{Chahardori20111057,
title = "A sub 1 V high PSRR CMOS bandgap voltage reference",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1057 - 1065",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001297",
author = "Mohammad Chahardori and Mojtaba Atarodi and Mohammad Sharifkhani",
keywords = "Analog integrated circuits",
keywords = "CMOS bandgap voltage reference",
keywords = "Low voltage",
abstract = "A Bandgap circuit capable of generating a reference voltage of less than 1 V with high PSRR and low temperature sensitivity is proposed. High PSRR achieved by means of an improved current mode regulator which isolates the bandgap voltage from the variations and the noise of the power supply. A vigorous analytical approach is presented to provide a universal design guideline. The analysis unveils the sensitivity of the circuit characteristic to device parameters. The proposed circuit is fabricated in a 0.18 μ m CMOS technology and operates down to a supply voltage of 1.2 V. The circuit yields 20 ppm/°C of temperature coefficient in typical case and 50 ppm/°C of temperature coefficient in worst case over temperature range −40 to 140°C, 60 ppm/V of supply voltage dependence and 60 dB PSRR at 1 MHz without trimming or extra circuits for the curvature compensation. The entire circuit occupies 0.027 mm2 of die area and consumes 134 μ W from a 1.2 V supply voltage at room temperature. Twenty chips are tested to show the robustness of the topology and the measurement results are compared with Monte Carlo simulation and analysis."
}
@article{Gu20111066,
title = "Wireless smart sensor with small spiral antenna on Si-substrate",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1066 - 1073",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001285",
author = "Bon-Ju Gu and Wang-Hoon Lee and Kazuaki Sawada and Makoto Ishida",
keywords = "Wireless smart sensor",
keywords = "Low power transmitter",
keywords = "Small spiral antenna",
keywords = "Pulse position modulation",
abstract = "This paper presents a wireless smart sensor (WSS) with a thermoelectric sensor, a wireless transmitter and a small spiral antenna on a single package. To transmit a sensor signal, the wireless transmitter was designed to consist of an amplifier, a modulator, an oscillator, a buffer stage and an antenna. The wireless transmitter used dual pulse position modulation for low-power transmission. The fabricated transmitter has a sampling frequency of 2.6 kHz and an output carrier wave frequency of 300 MHz band due to the higher far field radiation of the transmitted signals from inside the body. The small size spiral antenna on the chip was fabricated for the transmission of carrier waves. The antenna has a bandwidth of 270–360 MHz for VSWR<2 and a gain of −40 dBi. The fabricated sensor, transmitter and spiral antenna were packaged with bond-wire on a single package. The WSS consumed a power of about 16.9 mW at the supply power of 5 V. The electric field strength of the WSS was measured to be 64.6 dB μV/m at a distance of 3 m. The wireless operation of the fabricated WSS was confirmed by demonstrating that the sensor signal was modulated by the transmitter and that the modulated sensor data was transmitted through the small size spiral antenna."
}
@article{Myderrizi20111074,
title = "DXCCII-based grounded inductance simulators and filter applications",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1074 - 1081",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001273",
author = "Indrit Myderrizi and Shahram Minaei and Erkan Yuce",
keywords = "Inductance simulator",
keywords = "DXCCII",
keywords = "Universal filter",
keywords = "MISO",
abstract = "In this paper two new grounded inductance simulators based on DXCCII suitable for operation in 30 kHz–30 MHz frequency range, are presented. The proposed circuits both employ only a single dual X second-generation current conveyor (DXCCII) active device accompanied with three and four passive elements, respectively. The accuracy of the simulated inductors is verified by implementing them in some filter applications. Also, a novel multi-input single-output universal filter derived from one of the new grounded inductance simulators is simulated to demonstrate the functionality of the proposed circuit. Simulation results using AMS 0.35 μm CMOS process technology parameters are included."
}
@article{Tsitouras20111082,
title = "A 1 V CMOS programmable accurate charge pump with wide output voltage range",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1082 - 1089",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001261",
author = "Athanasios Tsitouras and Fotis Plessas and Michael Birbas and Grigorios Kalivas",
keywords = "Charge pump",
keywords = "Phase locked loop (PLL)",
keywords = "Low voltage",
keywords = "DC current mismatch",
keywords = "Charge mismatch",
keywords = "Glitch",
keywords = "Single-ended",
keywords = "Phase offset",
keywords = "Reference spurs",
abstract = "A 1 V, programmable, accurate, high speed, single-ended charge pump is proposed, suitable for low voltage PLLs. It is designed in TSMC 90-nm digital CMOS process and it consists of four switches in a current steering configuration, a unity gain rail to rail buffer for the charge sharing effect elimination, one more rail to rail amplifier for minimizing the DC current mismatch, a programmable current bias circuitry and two drivers based on the standard cell XOR gates specific configuration for achieving good synchronization between all charge pump input pulses at the PLL lock state. Replica biasing technique is applied to all charge pump switches. Current glitches and charge mismatch are suppressed by employing a mechanism with additional switches at the output. It exhibits a maximum DC current mismatch of 1% and charge mismatch of 6% over a wide output voltage range of 0.7 V for the entire range of output currents. The wide range of the output voltage remains relatively constant and independent of the selected charge pump current amplitude. This is attained by applying appropriate variation of the W/L ratios of the bias cascode current sources via the employment of additional programmable switches such that their saturation voltages remain relatively constant, something which in turn enables the output currents range to be as wide as it is required."
}
@article{Ruiz20111090,
title = "Efficient canonic signed digit recoding",
journal = "Microelectronics Journal",
volume = "42",
number = "9",
pages = "1090 - 1097",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100125X",
author = "Gustavo A. Ruiz and Mercedes Granda",
keywords = "Canonic signed digit (CSD)",
keywords = "Digital arithmetic",
keywords = "Minimal signed digit",
keywords = "Signed digit representation",
abstract = "In this work novel-efficient implementations to convert a two’s complement binary number into its canonic signed digit (CSD) representation are presented. In these CSD recoding circuits two signals, H and K, functionally equivalent to two carries are described. They are computed in parallel reducing the critical path and they possess some properties that lead to a simplification of the algebraic expressions minimizing the overall hardware implementation. As a result, the proposed circuits are highly efficient in terms of speed and area in comparison with other counterpart previous architectures. Simulations of different configurations made over standard-cell implementations show an average reduction of about 55% in the delay and 29% in the area for a ripple-carry scheme, 47% in the delay and 17% the area in a carry look-ahead scheme, and 36% in the delay and 31% the area in a parallel prefix scheme."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00134-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001340",
key = "tagkey2011IFC"
}
@article{Akbar2011973,
title = "Novel design of a fast reversible Wallace sign multiplier circuit in nanotechnology",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "973 - 981",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001194",
author = "Ehsan Pour Ali Akbar and Majid Haghparast and Keivan Navi",
keywords = "Reversible logic",
keywords = "ZS series gates",
keywords = "Reversible array multiplier",
keywords = "Wallace sign multiplier",
abstract = "Today, reversible logic is emerging as an intensely studied research topic, having applications in diverse fields, such as low-power design, optical information processing, and quantum computation. In this paper, we have proposed two reversible Wallace signed multiplier circuits through modified Baugh–Wooley approach, which are much better than the two available counterparts in all the terms. The multiplier is an essential building block for the construction of computational units of quantum computers. Besides, we need signed multiplier circuits for numerous operations. However, only two reversible signed multiplier circuits have been presented so far. In the first proposed architecture, our goals are to decrease the depth of the circuit and to increase the speed of the circuit. In the second proposed circuit, we aimed to improve the quantum cost, garbage outputs, and other parameters. All the proposed circuits are in the nanometric scales and can be used in the design of very complex systems."
}
@article{Hwang2011982,
title = "A new inverter-based charge pump circuit with high conversion ratio and high power efficiency",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "982 - 987",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001182",
author = "Yuh-Shyan Hwang and Dong-Shiuh Wu and Ho-Cheng Lin and Jiann-Jong Chen and Cheng-Chieh Yu",
keywords = "Charge pump circuit",
keywords = "Low-voltage application",
keywords = "High voltage generator",
abstract = "The current paper presents a new inverter-based charge pump circuit with high conversion ratio and high power efficiency. The proposed charge pump, which consists of a PMOS pass transistor, inverter-based switching transistors, and capacitors, can improve output voltage and conversion ratio of the circuit. The proposed charge pump was fabricated with TSMC 0.35 μm 2P4M CMOS technology. The chip area without pads is only 0.87 mm×0.65 mm. The measured results show that the output voltage of the four-stage charge pump circuit with 1.8 V power supply voltage (VDD=1.8 V) can be pumped up to 8.2 V. The proposed charge pump circuit achieves efficiency of 60% at 80 μA."
}
@article{Kim2011988,
title = "Temperature effects on output power of piezoelectric vibration energy harvesters",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "988 - 991",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001170",
author = "Seon-Bae Kim and Jung-Hyun Park and Hosang Ahn and Dan Liu and Dong-Joo Kim",
keywords = "Piezoelectric device",
keywords = "Temperature effect",
keywords = "MEMS",
keywords = "Energy harvester",
abstract = "The performance of piezoelectric vibration energy harvesters was studied as a function of environment temperature. The devices fabricated by soft or hard PZTs were used to investigate the effect of material parameters on the thermal degradation of the devices. PZT MEMS device was also prepared and compared with the bulk devices to investigate scaling effect on the thermal degradation. All devices were heated up to 150 °C in an insulating chamber. Output power was estimated by Roundy’s equivalent circuit model and compared with experimental data. The output power of all devices decreased with the increase of the temperature. The output power as a function of temperature can be predicted by the change of piezoelectric coupling coefficient that is proportional to piezoelectric constant and inverse of square root of dielectric constant. Such combined influence on the output power leads to a lower thermal degradation rate of the soft PZT-based device at a lower temperature. For MEMS scale device based on PZT films, temperature dependence of the output power was reduced. This result can be attributed to decreased temperature dependence of dielectric and piezoelectric constants mainly due to constrained domain motions."
}
@article{Miao2011992,
title = "Design, fabrication and characterization of a bistable electromagnetic microrelay with large displacement",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "992 - 998",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001169",
author = "Xiaodan Miao and Xuhan Dai and Peihong Wang and Guifu Ding and Xiaolin Zhao",
keywords = "MEMS",
keywords = "Electromagnetic",
keywords = "Microrelay",
keywords = "Bistable",
keywords = "Large displacement",
abstract = "This paper reports the design, fabrication and characterization of a bistable electromagnetic microrelay based on non-silicon surface micromachining technology. It mainly consists of an integrated microcoil at bottom with a spacer, and a suspension spring with a permanent magnet on top. Bistable mechanism is realized by the adoption of the SmCo permanent magnet to hold the microrelay at latching position without current. Switching between two stable states is completed by the variation of current direction in the microcoil. The corresponding power consumption is 25 mJ. The fabrication processes of related components are presented. The test result shows that the bistable electromagnetic microrelay can work with low operation voltage pulse of 5 V. The output displacement is about 380 μm while the response time is about 4.96 ms. Besides, the test insertion loss is −0.02 dB and the isolation is −39.91 dB at 30 MHz."
}
@article{PierzchaŁa2011999,
title = "Transformation of LC-filters to active RC-circuits via the two-graph method",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "999 - 1005",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001066",
author = "Marian PierzchaŁa and Mourad Fakhfakh",
keywords = "Circuit synthesis",
keywords = "Simulated inductors",
keywords = "Active RC-circuits",
keywords = "The two-graph technique",
keywords = "Symbolic analysis",
keywords = "Nullators",
keywords = "Norators",
keywords = "CMOS",
keywords = "Current conveyors",
keywords = "OTA",
abstract = "This paper proposes a novel method of synthesis of active RC-filters. The process is based on the use of the classical LC-network. The constructed equivalent active circuit uses a kind of active switches, i.e. nullators and norators that ensure ‘switching’ between voltage graphs and current graphs. Accordingly, parameters of the constructed circuit depend only on the values of resistors and capacitors and not on the parameters of the active elements. The proposed approach is illustrated through two examples. SPICE simulation results are given to show viability of the proposed method."
}
@article{Zebentout20111006,
title = "Effect of dimensional parameters on the current of MSM photodetector",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "1006 - 1009",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001054",
author = "A.D. Zebentout and Z. Bensaad and M. Zegaoui and A. Aissat and D. Decoster",
keywords = "Metal–semiconductor–metal (MSM)",
keywords = "Photodetectors",
keywords = "Gallium arsenide (GaAs)",
keywords = "Schottky contact",
abstract = "In this work, we present the influence of dimensional parameters on dark current and photocurrent of the metal–semiconductor–metal photodetector (MSM). MSM photodetectors of different sizes have been fabricated on GaAs (NID). The active area of MSM samples varies between 1×1 μm2 and 10×10 μm2 with equal electrodes spacing and finger widths (l=D) varying between 0.2 and 1 μm. The I(V) characterization in inverse and direct polarization in darkness shows good symmetry of curves, which shows the good performance of components and successful fulfillment of the Schottky contacts. The application of laser fiber of incident light power of 16 mW at wavelength of 850 nm for the illumination of the MSM photodetectors showed the evolution of the photocurrent ranging from 0.75 to 1.81 mA, respectively, for 1 to 0.2 μm electrodes spacing at 3 V and active area S=3×3 μm2. We showed also that variation ranging from 0.45 to 2.5 mA, respectively, for S=1×1 μm2 to S=10×10 μm2 at 3 V and 0.3 μm electrodes spacing. The resistance of MSM photodetectors obtained evolved proportionally to the electrodes spacing (0.87 kΩ for D=0.2 μm and 2.27 kΩ for D=1 μm with S=3×3 μm2) and inversely proportional to the surface area (2.02 kΩ for S=1×1 μm2, and 0.56 kΩ for S=10×10 μm2 with 0.3 μm inter electrodes spacing)."
}
@article{Khateb20111010,
title = "Novel low-voltage ultra-low-power DVCC based on floating-gate folded cascode OTA",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "1010 - 1017",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211001042",
author = "Fabian Khateb and Nabhan Khatib and Jaroslav Koton",
keywords = "Floating-gate MOST",
keywords = "Low-voltage ultra-low-power analog circuit design",
keywords = "Current-mode",
keywords = "DVCC",
keywords = "Universal filter",
abstract = "In this paper a novel low-voltage ultra-low-power differential voltage current conveyor (DVCC) based on folded cascode operational transconductance amplifier OTA with only one differential pairs floating-gate MOS transistor (FG-MOST) is presented. The main features of the proposed conveyor are: design simplicity; rail-to-rail input voltage swing capability at a low supply voltage of ±0.5 V; and ultra-low-power consumption of mere 10 μW. Thanks to these features, the proposed circuit could be successfully employed in a wide range of low-voltage ultra-low-power analog signal processing applications. Implementation of new multifunction frequency filter based on the proposed FG-DVCC is presented in this paper to take the advantages of the properties of the proposed circuit. PSpice simulation results using 0.18 μm CMOS technology are included as well to validate the functionality of the proposed circuit."
}
@article{Cui20111018,
title = "An ultra-low power integer-N frequency synthesizer for MICS transceivers",
journal = "Microelectronics Journal",
volume = "42",
number = "8",
pages = "1018 - 1023",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000863",
author = "Su Cui and Venkatesh Acharya and Bhaskar Banerjee",
keywords = "MICS",
keywords = "Implantable medical devices",
keywords = "Frequency synthesizer",
keywords = "Voltage-controlled oscillator",
keywords = "Integer-N frequency divider",
abstract = "The ultra-low power frequency synthesizer for the transceivers used in the application of Medical Implantable Communication Services (MICS) is presented. The MICS band is from 402 to 405 MHz. Each channel spacing is 300 kHz. Integer-N architecture is used to implement the frequency synthesizer. The post layout simulations show that the total power consumption of the system is less than 260 μ W at 1.2 V power supply. The gains of the charge pump and voltage controlled oscillator (VCO) are 0.18 μ A / rad and 50 MHz/V, respectively. The standard 300 kHz external clock is used as the reference. The design is carried out in the IBM 90 nm 9LPRF CMOS technology."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00108-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100108X",
key = "tagkey2011IFC"
}
@article{Xingyuan2011929,
title = "Novel hybrid D/A structures for high-resolution SAR ADCs—analysis, modeling and realization",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "929 - 935",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000966",
author = "Tong Xingyuan and Yang Yintang and Zhu Zhangming and Liu Lianxi",
keywords = "Analog-to-digital converter",
keywords = "SAR",
keywords = "D/A conversion",
keywords = "CMOS integrated circuits",
keywords = "High-resolution",
abstract = "An intermittent-sleeping C–R hybrid D/A structure, a resistor-reusing R–C hybrid D/A structure and an R–C–R combined D/A structure are researched with theoretical analysis and Matlab modeling in this paper. The switching power and passive components' matching requirement of these D/A structures are discussed in detail. Three SAR ADCs with these three novel structures are realized based on SMIC 0.18 μm CMOS, SMIC 90 nm CMOS and UMC 90 nm CMOS, respectively. The theoretical analysis, modeling verification and circuit realization proves the applicability of these three D/A conversion networks to high-resolution SAR ADCs."
}
@article{Hamlet2011936,
title = "Modeling of circuits with strongly temperature dependent thermal conductivities for cryogenic CMOS",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "936 - 941",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000954",
author = "J. Hamlet and K. Eng and T. Gurrieri and J. Levy and M. Carroll",
keywords = "Thermal modeling",
keywords = "Cryogenic CMOS",
keywords = "4 K electronics",
abstract = "When designing and studying circuits operating at cryogenic temperatures understanding local heating within the circuits is critical due to the temperature dependence of transistor and noise behavior. Local heating effects of a CMOS ring oscillator and current comparator were investigated at T=4.2 K. In two cases, the temperature near the circuit was measured with an integrated thermometer. A lumped element equivalent electrical circuit SPICE model that accounts for the strongly temperature dependent thermal conductivities and special 4.2 K heat sinking considerations was developed. The temperature dependence on power is solved numerically with a SPICE package, and the results are typically within 3 σ of the measured values for local heating ranging from < 1 K to over 100 K."
}
@article{JavadSharifi2011942,
title = "Introducing a technology index concept and optimum performance design procedure for single-electron-device based circuits",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "942 - 949",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000942",
author = "Mohammad Javad Sharifi and Davoud Bahrepour",
keywords = "Optimum design procedure",
keywords = "Technology index",
keywords = "Single electron device",
keywords = "Digital gate",
abstract = "Single electron devices (SEDs) are utilized in designing many logic gates; however, in most cases the examination of the circuits is limited to a DC analysis that only indicates the correct performance of the circuits' logic function. This paper focuses mainly on the issue of optimization. In this regard, comparison of different designs is needed, but it is not possible to compare two different designs unless they both belong to a single technology or can be scaled to a same technology. So, we first introduce a technology index for SEDs, which allows meaningful comparisons between various designs of different technologies. Then, we describe a method for scaling these designs into a single identical technology, and clarifying the relations between the involved concepts. Using two examples, we explain an optimum design method for digital logic gates based on SEDs. Finally, the results of these two examples are presented and compared with the original designs. The comparison showed that all the three major performance features, including lower bit error rate, higher operation frequency, and higher temperature operation are improved in the proposed optimized design."
}
@article{RanjanJha2011950,
title = "Performance analysis of an open-loop resonator loaded terahertz microstrip antenna",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "950 - 956",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000930",
author = "Kumud Ranjan Jha and G. Singh",
keywords = "Square patch",
keywords = "Terahertz",
keywords = "Open-loop resonator",
keywords = "Enhanced gain and efficiency",
abstract = "In this paper, an enhanced electrical performance of the open-loop loaded microstrip patch antenna at terahertz frequency has been investigated. The proposed antenna is designed to radiate at frequencies in the range of 0.5–0.7 THz with high gain and radiation efficiency. The effect of various substrate parameters on the electrical performance of the proposed antenna has been analyzed and simulated. The simulation has been performed using the CST Microwave studio, a commercial simulator based on finite integral technique. The directivity and radiation efficiency of the proposed antenna is 22.58 dBi and 94.50%, respectively, at 600 GHz. Further, the simulated results have been compared with Ansoft HFSS, a commercially available simulator based on the finite element method. We have also compared this proposed analytical result with reported literature with scale down approach."
}
@article{VijayaSankaraRao2011957,
title = "Current-mode full-duplex (CMFD) signaling for high-speed chip-to-chip interconnect",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "957 - 965",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000875",
author = "P. Vijaya Sankara Rao and Pradip Mandal",
keywords = "Full-duplex",
keywords = "Current-mode",
keywords = "Hybrid",
keywords = "Transimpedance amplifier",
abstract = "In this work we propose a new current-mode full-duplex (CMFD) signaling scheme for high-speed chip-to-chip data communication. In this scheme, all the internal nodes of the link are maintained at low-impedance, facilitating high-speed data communication. A new hybrid circuit topology required for separating the inbound signal from the outbound signal is presented. The proposed current-mode hybrid is realized by a source-coupled main driver, a scaled down replica stage and a common-gate (CG) transimpedance amplifier (TIA). Detailed design, analysis, noise and jitter characterization of the proposed hybrid is presented. The hybrid is realized in 1.8 V, 0.18 μ m digital CMOS technology. Using this hybrid circuit topology, CMFD signaling over a chip-to-chip interconnect is demonstrated. The post-layout performance shows 8 Gb/s data transfer rate over a FR4 PCB trace of length 7.5 in. for a target bit-error rate (BER) of 10−12. The FR4 PCB trace is modeled by measured 4-port S-parameters in the frequency range from 100 MHz to 20 GHz. The input-referred noise current of the receiver and output-noise voltage of transmitter are 1.76 μ A and 5.34 mV, respectively. The standalone power consumption of the hybrid is 14.64 mW."
}
@article{Wang2011966,
title = "A high precision low dropout regulator with nested feedback loops",
journal = "Microelectronics Journal",
volume = "42",
number = "7",
pages = "966 - 971",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000711",
author = "Chua-Chin Wang and Ron-Chi Kuo and Tung-Han Tsai",
keywords = "Low dropout",
keywords = "Low noise",
keywords = "High precision",
keywords = "LDO",
abstract = "A high precision low dropout regulator (LDO) with nested feedback loops is proposed in this paper. By nesting a zero-tracking compensation loop inside of the negative feedback loop comprising an error amplifier, the independence of off-chip capacitor and effective series resistance (ESR) is ensured for different load currents and operating voltages. This circuit is designed and fabricated using a 0.35 μ m standard CMOS process. The die area is a 1350 μ m × 560 μ m . The measurement results show that the total error of the output voltage caused by line and load variations is less than ±3% in low quiescent current (Iddq) or low voltage scenarios. Besides, the smallest dropout of the LDO, 0.11 V, while the output current is 165 mA, the output load is 4.7 μ F and 20 in parallel."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00098-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100098X",
key = "tagkey2011IFC"
}
@article{Rezaei2011827,
title = "Ultra low voltage, high performance operational transconductance amplifier and its application in a tunable Gm-C filter",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "827 - 836",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000929",
author = "Farzan Rezaei and Seyed Javad Azhari",
keywords = "OTA",
keywords = "Ultra low voltage",
keywords = "Linearity",
keywords = "CMRR",
keywords = "Tunable",
keywords = "Gm-C filter",
abstract = "This paper presents an ultra low voltage, high performance Operational Transconductance Amplifier (OTA) and its application to implement a tunable Gm-C filter. The proposed OTA uses a 0.5 V single supply and consumes 60 μw. Employing special CMFF and CMFB circuits has improved CMRR to 138 dB in DC. Using bulk driven input stage results in higher linearity such that by applying a 500 mvp–p sine wave input signal at 2 MHz frequency in unity gain closed loop configuration, third harmonic distortion for output voltage is −46 dB and becomes −42.4 dB in open loop state for 820 mvp–p output voltage at 2 MHz. DC gain of the OTA is 47 dB and its unity gain bandwidth is 17.8 MHz with 20 pF capacitance load due to both deliberately optimized design and special frequency compensation technique. The OTA has been used to realize a wide tunable Gm-C low-pass filter whose cutoff frequency is tunable from 1.4 to 6 MHz. Proposed OTA and filter have been simulated in 0.18 μm TSMC CMOS technology with Hspice. Monte Carlo and temperature dependent simulation results are included to forecast the mismatch and temperature effects after fabrication process."
}
@article{Kang2011837,
title = "The novel SCR-based ESD protection with low triggering and high holding voltages",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "837 - 839",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000899",
author = "Myounggon Kang and Ki-Whan Song and Byung-Gook Park and Hyungcheol Shin",
keywords = "Discharge electrostatic discharge (ESD)",
keywords = "Silicon controlled rectifier (SCR)",
keywords = "Holding voltage",
keywords = "Triggering voltage",
keywords = "Breakdown current",
abstract = "This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm."
}
@article{Zhou2011840,
title = "Sub-threshold synchronizer",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "840 - 850",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000887",
author = "Jun Zhou and Maryam Ashouei and David Kinniment and Jos Huisken and Gordon Russell and Alex Yakovlev",
keywords = "Synchronizer",
keywords = "Sub-threshold",
keywords = "MTBF",
keywords = "Forward Body-bias",
abstract = "Sub-threshold operation has been proven to be very effective to reduce the power consumption of circuits when high performance is not required. Future low power systems on chip are likely to consist of many sub-systems operating at different frequencies and VDDs from super-threshold to sub-threshold region. Synchronizers are therefore needed to interface between these sub-systems. However, VDD scaling rapidly degrades synchronizers' performance making them unsuitable for sub-threshold operation. For the first time, we analyze the synchronizer performance at ultra low voltages and propose to apply forward body bias to extend the operation of synchronizers to the sub-threshold region and to make them resilient to process variation. We show that applying full-VDD bias significantly increases the transconductance of the bi-stable in synchronizers without adding capacitance to the switching nodes. As a result all the circuit parameters (τ metastability time constant, Td normal propagation delay and Tw metastability window) determining synchronizer performance or mean time between failure (MTBF) can be improved by more than 80% (i.e. by five times) in the sub-threshold region. We also study the impact of process variation on the synchronizer performance in the sub-threshold region and conclude that with full-VDD bias the synchronizer MTBF can be improved from seconds to years for the worst case corner. Finally, we propose an implementation scheme of full-VDD body-biased synchronizer, which is able to work for a wide range of VDDs from sub-threshold region to nominal VDD with nearly zero overhead."
}
@article{Wei2011851,
title = "Novel universal threshold logic gate based on RTD and its application",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "851 - 854",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000851",
author = "Yi Wei and Jizhong Shen",
keywords = "Resonant tunneling diode (RTD)",
keywords = "Threshold logic",
keywords = "Monostable–bistable logic element (MOBILE)",
keywords = "Spectral technology",
abstract = "Resonant tunneling diodes (RTDs) are receiving much attention because of their high-speed switching capability and functional versatility. Due to the negative differential resistance exhibited by RTDs, great functionality with a single gate can be achieved. In this paper, novel universal threshold logic gates (UTLG) based on RTD with simple structure and fixed parameter are proposed. The three-variable UTLG implement all the threshold functions of three variables by reconfiguring the input bits. The proposed circuit can also be applied to the design of arbitrary logic function in a multilevel threshold network. Finally, the operation of UTLG is verified by HSPICE simulation using extensively validated models."
}
@article{Chi2011855,
title = "A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "855 - 862",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100084X",
author = "Baoyong Chi and Kasra Omid-Zohoor and Zhihua Wang and S. Simon Wong",
keywords = "Reconfigurable power amplifier",
keywords = "CMOS",
keywords = "RF",
keywords = "Transformer",
keywords = "Switchable LC tank",
abstract = "A fully-integrated dual-band dynamic reconfigurable differential power amplifier with high gain in 65 nm CMOS is presented. A switchable shunt LC network is proposed to implement the dual-band reconfigurable operation and achieve high gain at both low and high frequency bands, and the high quality on-chip transformers are utilized to implement input/output impedance matching and single-ended to differential conversion. Measured results show that the dual-band dynamic reconfigurable power amplifier can provide 23 dB gain at 2.15 GHz and 21 dB gain at 4.70 GHz, and achieve more than 19 dBm saturated output power at 2.15 GHz and 13 dBm saturated output power at 4.70 GHz, respectively. The die area is about 1.7 mm×2.0 mm."
}
@article{Sedaghat2011863,
title = "An FSM-based monitoring technique to differentiate between follow-up and original errors in safety-critical distributed embedded systems",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "863 - 873",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000760",
author = "Yasser Sedaghat and Seyed Ghassem Miremadi",
keywords = "Distributed embedded systems",
keywords = "Error propagation",
keywords = "Follow-up errors",
keywords = "FlexRay protocol",
keywords = "Transient faults",
keywords = "FSM-based monitoring",
abstract = "Nowadays, distributed embedded systems are employed in many safety-critical applications such as X-by-Wire. These systems are composed of several nodes interconnected by a network. Studies show that a transient fault in the communication controller of a network node can lead to errors in the fault site node (called original errors) and/or in the neighbor nodes (called follow-up errors). The communication controller of a network node can be halted due to an error, which may be a follow-up error. In this situation, a follow-up error leads to halt the correct operation of a fault-free controller while the fault site node, i.e. the faulty controller, still continues its operation. In this paper, an analysis shows that the occurrence probability of follow-up errors in communication protocols is noticeable. Consequently, it is important to provide a technique to recognize the error's nature, i.e. original or follow-up in each node. This paper proposes a novel low-cost monitoring technique to differentiate follow-up errors from original errors. The proposed technique is based on monitoring the operational states of a communication controller. In this paper, this technique has been applied to the FlexRay protocol. However, it is applicable for all communication protocols having an FSM-based description such as FlexRay, TTP/C, and TT-Ethernet. To evaluate the monitoring technique, a FlexRay-based network including 4 nodes was designed and implemented. The low-cost monitoring technique was as well implemented inside each node of the network. A total of 135,600 transient bit-flip faults were injected in the communication controller of one node. The results showed that about 6.0% of injected faults lead to original errors. This figure for follow-up errors was about 6.1%. The results as well showed that the accuracy of the proposed technique to differentiate between the follow-up and original errors is about 97% at merely 1.4% hardware overhead. This level of accuracy and cost makes the proposed technique a feasible solution to enhance the reliability of communication controllers."
}
@article{ShiehAliSaleh2011874,
title = "The dual-edge alignment technique with improved spur reduction effects in ring oscillators",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "874 - 882",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000759",
author = "Sajjad Shieh Ali Saleh and Nasser Masoumi",
keywords = "Ring oscillator",
keywords = "Alignment",
keywords = "Phase aligned",
keywords = "Spur",
keywords = "Jitter",
keywords = "Reference",
keywords = "Dual edge alignment",
keywords = "One edge alignment",
abstract = "In this paper, the technique of dual-edge phase-alignment and its effects on ring oscillators are presented. This technique provides resetting of the built-up jitter at both rising and falling edges of a clean aligning signal named as the reference. Using signals and systems theory, the effect of the technique on the spurs due to the aligning reference signal is completely analyzed. We show that adding properly the dual-edge aligning feature to phase-aligned ring oscillators cause the spurs in the neighborhood of the carrier to disappear. First, the validity of the results obtained from the derived analytical equations is verified through simulations using MATLAB. Then a complete circuit considering realistic models for its components is simulated in TSMC RF CMOS 0.18um process using ADS for further validation."
}
@article{Hu2011883,
title = "Impact of within-wafer process variability on radiation response",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "883 - 888",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.04.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000747",
author = "Zhiyuan Hu and Zhangli Liu and Hua Shao and Zhengxuan Zhang and Bingxu Ning and Ming Chen and Dawei Bi and Shichang Zou",
keywords = "CMOS devices",
keywords = "Ionizing radiation",
keywords = "STI",
keywords = "Total dose effects",
abstract = "The impact of sample-to-sample variability on total ionizing dose (TID) response within-wafer for a 180-nm CMOS technology has been studied. Large variations in leakage current and threshold voltage shift after irradiation are observed. These variations are mainly contributed to the process variability. The process steps which cause TID response variation are preliminarily discussed."
}
@article{Rahimi2011889,
title = "Low-energy GALS NoC with FIFO—Monitoring dynamic voltage scaling",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "889 - 896",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000735",
author = "Abbas Rahimi and Mostafa E. Salehi and Siamak Mohammadi and Sied Mehdi Fakhraie",
keywords = "Low energy",
keywords = "GALS NoC",
keywords = "Dynamic voltage scaling",
abstract = "In this paper we propose two dynamic voltage scaling (DVS) policies for a GALS NoC, which is designed based on fully asynchronous switch architectures. The first one is a history-based DVS policy, which exploits the link utilization and adjusts the voltages of different parts of the router among a few voltage levels. The second one is a FIFO-adaptive DVS, which uses two FIFO threshold levels for decision making. It judiciously adjusts supply voltage of each switch among only three voltage levels. The introduced architecture is simulated in 90 nm CMOS technology with accurate Spice simulations. Experimental results show that the FIFO-adaptive DVS not only lowers the implementation cost, but also in a 86 % saturated network achieves 36 % energy-delay product (ED) saving compared to the DVS policy based on link utilization."
}
@article{Sheu2011897,
title = "A 1-V 4-GHz wide tuning range voltage-controlled ring oscillator in 0.18 μm CMOS",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "897 - 902",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000723",
author = "Meng-Lieh Sheu and Yu-Shang Tiao and Lin-Jie Taso",
keywords = "Voltage-controlled oscillator (VCO)",
keywords = "Voltage-controlled ring oscillator (VCRO)",
keywords = "complementary current control",
keywords = "Multiple-pass loop",
keywords = "Wide tuning range",
abstract = "A new differential delay cell with complementary current control to extend the control voltage range as well as the operation frequency is proposed for low voltage and wide tuning range voltage-controlled ring oscillator (VCRO). The complementary current control can get rid of the restriction that control voltage is unable to cover the full range of power supply voltage in a conventional VCRO. A three-stage VCRO chip working with 1 V power supply voltage is constructed using 0.18 μm 1P6M CMOS process for verifying the efficacy of the proposed differential delay cell. Measured results of the VCRO chip show that a wide range of operation frequency from 4.09 GHz to 479 MHz, a tuning range of 88%, is achieved for the full range of control voltage from 0 to 1 V. The power consumptions of the chip are 13 and 4 mW for oscillation outputs of 4.09 GHz and 479 MHz, respectively. The measured phase noise is −93.3 dBc/Hz at 1 MHz offset from 4.09 GHz center frequency. The core area of the chip is 106 μm×76.2 μm."
}
@article{Gupta2011903,
title = "Low-voltage FGMOS based analog building blocks",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "903 - 912",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.013",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100070X",
author = "Maneesha Gupta and Rishikesh Pandey",
keywords = "Current-to-voltage converter",
keywords = "Current-mode divider",
keywords = "Floating gate MOSFETs",
keywords = "Low-voltage",
keywords = "Exponential function generator",
abstract = "Novel floating gate MOSFET (FGMOS) based low-voltage analog circuits such as current-to-voltage converter, current-mode divider and pseudo-exponential function generator are proposed in this paper. The inherent advantages of these circuits are their simplicity, accuracy and low power dissipation. The current-to-voltage converter is operated with a single power supply of 0.9 V. The current-mode divider and pseudo-exponential function generator are operated at supply voltages of ±0.9 V. It was observed that the power dissipation of the current-to-voltage converter is reduced to 12 μW using a single power supply. The power dissipations of the current-mode divider and pseudo-exponential function generator are found to be 356 and 471 μW, respectively. The proposed circuits are simulated using SPICE in 0.5 μm CMOS process technology to demonstrate the feasibility and the effectiveness of the proposed circuits."
}
@article{Tehrani2011913,
title = "Design and implementation of Multistage Interconnection Networks using Quantum-dot Cellular Automata",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "913 - 922",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000589",
author = "Mohammad A. Tehrani and Farshad Safaei and Mohammad Hossein Moaiyeri and Keivan Navi",
keywords = "Quantum-dot Cellular Automata",
keywords = "Multistage Interconnection Networks",
keywords = "Network design",
keywords = "Nanoelectronics",
abstract = "Quantum-dot Cellular Automata (QCA) is a promising nanotechnology with ultra-small feature size and ultra-low power consumption compared with transistor-based technologies. During the past decade the QCA has been carefully studied, and it has demonstrated the ability of using quantum phenomena for implementing logical devices. Multistage Interconnection Networks (MINs) have been frequently suggested as the connection means in parallel systems. This architecture provides the maximum bandwidth to the components, and the minimum latency access to memory modules. They are generally accepted concepts in the semiconductor industry for solving problems related to on-chip communications. Although there have been a large amount of researches on MINs for parallel processing, there seems to be surprising attempts to utilize the unique characteristics of QCA for designing and implementing of MINs. In an effort to fill this gap, this paper presents the first design methodology of MINs using QCA. To demonstrate the functionality and validity of the proposed methodology, performance evaluations of MINs using QCADesigner simulator are given and analyzed."
}
@article{Huq2011923,
title = "Physics-based numerical simulation and device characterizations of AlGaN/GaN HEMTs with temperature effects",
journal = "Microelectronics Journal",
volume = "42",
number = "6",
pages = "923 - 928",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000279",
author = "Hasina F. Huq and Bashirul Polash",
keywords = "AlGaN/GaN",
keywords = "HEMT",
keywords = "2-DEG",
abstract = "The research presents AlGaN/GaN HEMTs device characterizations at different temperatures using physics-based numerical simulation. Industry standard simulation tool Silvaco ATLAS is used to characterize the various electronic properties of the device. An extensive theoretical overview is done to achieve the most comprehensive values for GaN and AlGaN properties, as discussed in the paper. This research is mainly focused on simulation of temperature dependent device performances as well as on some other material properties that are not well defined in ATLAS. Energy bandgap, density of states, saturation velocities, surface traps, polarization effect, carrier lifetime and mobility, permittivity, effective Richardson's constant, and donor and acceptor energy levels are considered as critical parameters for predicting temperature effect in ALGaN/GaN HEMT. Various aspects of device performance are analyzed at high temperature along with the different bias configurations."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00078-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000784",
key = "tagkey2011IFC"
}
@article{Qian2011609,
title = "Threshold voltage degradation under high Vgs and low Vds on 200 V SOI power devices",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "609 - 613",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000681",
author = "Qinsong Qian and Siyang Liu and Weifeng Sun and Hu Sun",
keywords = "Hot-carrier degradation",
keywords = "Lateral insulated gate bipolar transistor on SOI substrate (SOI-LIGBT)",
keywords = "Lateral diffused MOS transistor on SOI substrate (SOI-LDMOS)",
keywords = "High Vgs and low Vds",
abstract = "The hot-carrier degradation behavior of the 200 V lateral insulated gate bipolar transistor and lateral diffused MOS transistor both on SOI substrates (SOI-LIGBT and SOI-LDMOS) under high Vgs and low Vds is experimentally investigated. It is shown that the hot electron injection and trapping into gate oxide in the channel region will domains the degradation, which results in the positive threshold voltage (Vth) shift, however, it is very interesting that the degradation level in SOI-LIGBT device is much more serious than that in SOI-LDMOS device. Finally, an improved method to reduce the Vth degradation of SOI-LIGBT is also presented, which is adding a P-type buried layer under the source to change the hole current path. All the results have been verified by MEDICI simulations."
}
@article{SaeediVahdat2011614,
title = "Improving response of a MEMS capacitive microphone filtering shock noise",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "614 - 621",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000619",
author = "Armin Saeedi Vahdat and Ghader Rezazadeh and Saeid Afrang",
keywords = "Capacitive microphone",
keywords = "MEMS",
keywords = "Mechanical shock",
keywords = "Pull-in instability",
keywords = "Frequency response",
abstract = "This paper deals with the effects of mechanical shock loads on the stability and dynamic response of a MEMS circular capacitive microphone. As results demonstrate, mechanical shock loads affect the dynamic response and the stability region of the capacitive microphone. The results show that the mechanical shock loads can induce considerable noise in the response of the microphone. Therefore, noise filtering is an important issue to eliminate the output response distortions. To achieve this aim we propose a structure for the capacitive microphone with an electrical circuit in order to eliminate the shock noise. In addition the effect of a delay in shock application is also studied, and it is illustrated that a delay in shock application plays an important role in the stability of the capacitive microphone."
}
@article{Khateb2011622,
title = "Novel low-voltage low-power high-precision CCII± based on bulk-driven folded cascode OTA",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "622 - 631",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000644",
author = "Fabian Khateb and Nabhan Khatib and David Kubánek",
keywords = "Bulk-driven MOST",
keywords = "Current mode",
keywords = "CCII",
keywords = "Universal filter",
abstract = "This paper presents possible approaches to the design of a novel low-voltage, low-power, and high-precision current conveyor of the second generation (CCII±) based on the bulk-driven folded cascode operational transconductance amplifier (OTA) with extended input common-mode voltage range. This CCII± utilizes bulk-driven differential pairs to obtain a nearly rail-to-rail input stage at a low supply voltage. The proposed conveyor operates at a low supply voltage of ±400 mV with a reduced power consumption of only 64 μW. A current-mode multifunction filter is presented as an application of the CCII±. This filter provides five transfer functions simultaneously, namely low-pass, band-pass, high-pass, notch, and all-pass. The filter has the following properties and advantages: it employs three bulk-driven current conveyors BD-CCII±, three grounded resistors, and two grounded capacitors, which is suitable for integrated circuit implementation. Furthermore, the input signal is connected to the low-impedance X terminal of the BD-CCII± whereas the output signals are taken from the high-impedance output terminals Z+ and Z−. Finally, the pole frequency and quality factor of the designed filter are tunable independent of each other. PSpice simulation results using the 0.18 μm CMOS technology are included to prove the results."
}
@article{Wan2011632,
title = "Flow and heat transfer in porous micro heat sink for thermal management of high power LEDs",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "632 - 637",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000632",
author = "Z.M. Wan and J. Liu and K.L. Su and X.H. Hu and S.S. M",
keywords = "High power LEDs",
keywords = "Porous micro heat sink",
keywords = "Porous media",
keywords = "High heat flux",
keywords = "Heat dissipation",
abstract = "A novel porous micro heat sink system is presented for thermal management of high power LEDs, which has high heat transport capability. The operational principle and heat transfer characteristics of porous micro heat sink are analyzed. Numerical model for the micro heat sink is developed to describe liquid flow and heat transfer based on the local thermal equilibrium of porous media, and it is solved with SIMPLE algorithm. The numerical results show that the heated surface temperature of porous micro heat sink is low at high heat fluxes and is much less than the bearable temperature level of LED chips. The heat transfer coefficient of heat sink is very high, and increasing the liquid velocity can enhance the average heat transfer coefficient. The overall pressure loss of heat sink system increases with the increasing the inlet velocity, but the overall pressure drop is much less than the pumping pressure provided by micro pump. The micro heat sink has good performance for thermal management of high power LEDs, and it can improve the reliability and life of LEDs."
}
@article{AghliMoghaddam2011638,
title = "Modified bundled-data as a new protocol for NoC asynchronous links",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "638 - 647",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000607",
author = "Soodeh Aghli Moghaddam and Siamak Mohammadi and Parviz Jabehdar Maralani",
keywords = "Modified bundled-data",
keywords = "Link protocol",
keywords = "Asynchronous link",
keywords = "Network-on-a-chip",
keywords = "Delay-insensitive",
abstract = "Asynchronous interconnection paradigm in NoCs has attracted many system designers in the recent years, through its different possible implementation strategies. In this paper, we present a new insight on how to categorize asynchronous protocols and explore a suitable protocol for the NoC asynchronous links. The new categorization criterion is based on the type of dependency between data transferring and handshaking tasks in a protocol. Furthermore, a new protocol called modified bundled-data (MBD) is introduced. MBD is a bundled-data-like protocol with two pairs of two-phase dual-rail encoded parity lines on the lateral sides of data lines, besides one two-phase acknowledgement line. The new protocol is evaluated by comparing its simulation results with those of bundled-data (BD) and dual-rail (DR) protocols on a 32-bit flit NoC asynchronous link. For this purpose, a new comprehensive interconnect model has been developed. The simulation results show that the new protocol's features such as power consumption, throughput, and latency are comparable with BD protocol's, while its signal integrity features are close to DR's."
}
@article{Hafiz2011648,
title = "Design and implementation of a 0.8 V input, 84% duty cycle, variable frequency step-up converter",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "648 - 660",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000590",
author = "Mohiuddin Hafiz and Khondker Zakir Ahmed and Didar Islam and A.B.M. Harun-ur Rashid",
keywords = "Compensation ramp",
keywords = "Current mode control",
keywords = "DC–DC converter",
keywords = "Duty cycle",
keywords = "Pulse-width modulation",
keywords = "Switch-mode converter",
abstract = "A 0.8 V input, 84% duty cycle, variable frequency CMOS DC–DC step-up converter with integrated power switches has been presented in this paper. The converter has the properties of both the current mode and hysteric control mode operations. The inductor charging time of the topology is designed to be inversely proportional to the input voltage and as a result the inductor current disturbance dies out immediately. Hence, no external components and extra I/O pins are required for the compensation of the current loop. The step-up converter has been fabricated with a standard 0.5 μ m pseudo BiCMOS process. Special MOS device of threshold voltage 0.5 V and start-up circuitries enable the converter to start from a voltage as low as 0.8 V. The real time data show that the converter can boost 0.8 V to as high as 5 V, which makes it suitable for low voltage applications. The efficiency of the chip has been found over 75 % for the entire load range from 10 to 100 mA."
}
@article{Djeffal2011661,
title = "Multi-objective genetic algorithms based approach to optimize the electrical performances of the gate stack double gate (GSDG) MOSFET",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "661 - 666",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000577",
author = "F. Djeffal and T. Bendib",
keywords = "Multi-objective",
keywords = "Genetic algorithms",
keywords = "GSDG MOSFET",
keywords = "Optimization",
keywords = "Design",
abstract = "In this paper, a Multi-Objective Genetic Algorithm (MOGA)-based approach is proposed to study and optimize the electrical behavior of Gate Stack Double Gate (GSDG) MOSFET for deep submicron CMOS digital and analog circuit applications. The analytical models, which describe the electrical behavior, of the (GSDG) MOSFET such as OFF-current, threshold voltage roll-off, drain induced barrier lowering (DIBL), subthreshold swing and transconductance have been ascertained. The proposed compact models are used to formulate the objective functions, which are the pre-requisite of multi-objective genetic algorithms. The problem is then presented as a multi-objective optimization one where the subthreshold and saturation parameters are considered simultaneously. The proposed approach is used to find the optimal electrical and dimensional transistor parameters in order to obtain and explore the better transistor performances for analog and digital CMOS-based circuit applications."
}
@article{NourmandiPour2011667,
title = "BIST for network on chip communication infrastructure based on combination of extended IEEE 1149.1 and IEEE 1500 standards",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "667 - 680",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000565",
author = "Reza Nourmandi-Pour and Nafiseh Mousavian and Ahmad Khadem-Zadeh",
keywords = "Communication infrastructure",
keywords = "BIST",
keywords = "IEEE 1149.1",
keywords = "IEEE 1500",
keywords = "NOC",
abstract = "In this paper we propose a BIST based method to test network on chip (NOC) communication infrastructure. The proposed method utilizes an IEEE 1149.1 architecture based on BIST to at-speed test of crosstalk faults for inter-switch links as well as an IEEE 1500-compliant wrapper to test switches themselves in NOC communication infrastructure. The former architecture includes enhanced cells intended for MAF model test patterns generation and analysis test responses, and the later architecture includes: (a) a March decoder which decodes and executes March commands, which are scanned in serially from input system, on First-In-First-Out (FIFO) buffers in the switch; and (b) a scan chain which is defined to test routing logic block of the switch.
To at-speed test inter-switch links one new instruction is used to control cells and TPG controller. Two new instructions, as well as, are applied to activate March decoder and to control scan activities in switch test session. These instructions are defined to fully comply with conventional IEEE 1149.1 and IEEE 1500 standards."
}
@article{PauloCarmo2011681,
title = "Super-regenerative receiver at 433 MHz",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "681 - 687",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000401",
author = "João Paulo Carmo and José Carlos Ribeiro and Paulo Mateus Mendes and José Higino Correia",
keywords = "Super-regeneration",
keywords = "RF receiver",
keywords = "Super-regenerative receiver",
keywords = "CMOS",
abstract = "This paper presents a receiver for operation in the 433 MHz ISM band. The selected architecture explores the super-regeneration phenomena to achieve a high sensitivity for applying in wireless implantable microsystems. This radio-frequency (RF) chip can be supplied with a voltage of only 3 V for demodulating signals with powers in the range (−100, −40) dB. The codulation (modulation and coding) scheme of the binary data is a variation of the Manchester code combined with on/off keying (OOK) modulation. The AMIS 0.7 μm CMOS process was selected for targeting the requirement to fabricate a low-cost receiver, whose prototype was integrated in a die with an area of 5×5 mm2. Also, this receiver is fully compatible with commercial transmitters for the same frequency."
}
@article{Vishvakarma2011688,
title = "Modeling and estimation of edge direct tunneling current for nanoscale metal gate (Hf/AlNx) symmetric double gate MOSFET",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "688 - 692",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000395",
author = "S.K. Vishvakarma and V. Komal Kumar and A.K. Saxena and S. Dasgupta",
keywords = "Metal gate",
keywords = "Double gate MOSFET",
keywords = "Potential",
keywords = "Edge direct tunneling current",
abstract = "This paper present, the modeling and estimation of edge direct tunneling current of metal gate (Hf/AlNx) symmetric double gate MOSFET with an intrinsic silicon channel. To model this leakage current, we use the surface potential model obtained from 2D analytical potential model for double gate MOSFET. The surface potential model is used to evaluate the electric field across the insulator layer hence edge direct tunneling current. Further, we have modeled and estimated the edge direct tunneling leakage current for high-k dielectric. In this paper, from our analysis, it is found that dual metal gate (Hf/AlNx) material offer the optimum leakage currents and improve the performance of the device. This feature of the device can be utilized in low power and high performance circuits and systems."
}
@article{JiunWei2011693,
title = "High output impedance current-mode universal biquadratic filters with five inputs using multi-output CCIIs",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "693 - 700",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000383",
author = "Jiun-Wei and Horng",
keywords = "Active filter",
keywords = "Second-generation current conveyors",
keywords = "Current mode",
abstract = "Three current-mode universal biquadratic filters each with five input terminals and one output terminal are presented. The first proposed circuit uses three multi-output second-generation current conveyors, two grounded capacitors and three resistors. This circuit offers the following advantageous features: orthogonal controllability of resonance angular frequency and quality factor, high output impedance, the versatility to synthesize all standard filter types without component matching condition and using grounded capacitors. The second proposed circuit uses three multi-output second-generation current conveyors, two grounded capacitors and two resistors. This circuit offers the following advantageous features: using minimum passive components, high output impedance, the versatility to synthesize all standard filter types without component matching condition and using grounded capacitors. The third proposed circuit uses three multi-output second-generation current conveyors, two grounded capacitors and three grounded resistors. This circuit offers the following advantageous features: the versatility to synthesize all standard filter types, high output impedance and using only grounded passive components. Each of the proposed circuits can get five kinds of filter functions by using only one current input signal."
}
@article{Dehkordi2011701,
title = "Novel RAM cell designs based on inherent capabilities of quantum-dot cellular automata",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "701 - 708",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000371",
author = "Mostafa Abdollahian Dehkordi and Abbas Shahini Shamsabadi and Behrouz Shahgholi Ghahfarokhi and Abbas Vafaei",
keywords = "Quantum cellular automata",
keywords = "Clocking zones",
keywords = "RAM cell",
keywords = "D-latch",
abstract = "Quantum Cellular Automata (QCA) is a novel and attractive method which enables designing and implementing high-performance and low-power consumption digital circuits at nano-scale. Since memory is one of the most applicable basic units in digital circuits, having a fast and optimized QCA-based memory cell is remarkable. Although there are some QCA structures for a memory cell in the literature, however, QCA characteristics may be used in designing a more optimized memory cell than blindly modeling CMOS logics in QCA. In this paper, two improved structures have been proposed for a loop-based Random Access Memory (RAM) cell. In the proposed methods, the inherent capabilities of QCA, such as the programmability of majority gate and the clocking mechanism have been considered. The first proposed method enjoys smaller number of cells and the wasted area has been reduced compared to traditional loop-based RAM cell. For the second proposed method, the memory access time has been duplicated in presence of smaller number of cells. Irregular placement of QCA cells in a QCA layout makes its realization troublesome. So, we have proposed alternative versions of the proposed methods that exploit regularity of clock zones in design and have compared them to each other. QCA designer has been employed for simulation of the proposed designs and proving their validity."
}
@article{Wang2011709,
title = "A high-efficiency DC–DC buck converter for sub-2×VDD power supply",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "709 - 717",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000280",
author = "Chua-Chin Wang and Chih-Lin Chen and Gang-Neng Sung and Ching-Lin Wang",
keywords = "DC–DC",
keywords = "Step-down converter",
keywords = "Sub-2×VDD",
keywords = "Gate-oxide reliability",
abstract = "This paper presents a DC–DC step-down converter, which can accommodate the range of power supply voltage from VDD to sub-2×VDD. By utilizing stacked power MOSFETs, a voltage level converter, a detector and a controller, the proposed design is realized by a typical 1P6M 0.18 μ m CMOS process without using any high voltage process to resolve gate-oxide reliability and leakage current problems. The core area of the proposed design is less than 0.184 mm2, while the power supply range is up to 5 V. Since the internal reference voltage is 1.0 V, it can increase the output regulation range. The proposed design attains very high conversion efficiency to prolong the life time of battery-based power supply. Therefore, it can be integrated in a SOC (system-on-chip) to provide multiple supply voltage sources."
}
@article{Rebaud2011718,
title = "Timing slack monitoring under process and environmental variations: Application to a DSP performance optimization",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "718 - 732",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000292",
author = "B. Rebaud and M. Belleville and E. Beigné and C. Bernard and M. Robert and P. Maurine and N. Azemard",
keywords = "Variability",
keywords = "Monitor",
keywords = "Timing slack",
keywords = "Process compensation",
abstract = "To compensate the variability effects in advanced technologies, Process, Voltage, Temperature (PVT) monitors are mandatory to use Adaptive Voltage Scaling (AVS) or Adaptive Body Biasing (ABB) techniques. This paper describes a new monitoring system, allowing failure anticipation in real-time, looking at the timing slack of a pre-defined set of observable flip–flops. This system is made of dedicated sensor structures located near monitored flip–flop, coupled with a specific timing detection window generator, embedded within the clock-tree. Validation and performances simulated in a 45 nm low power technology, demonstrate a scalable, low power and low area system, and its compatibility with a standard CAD flow. Gains between an AVFS scheme based on those structures and a standard DVFS are given for a 32 bits VLIW DSP."
}
@article{Zhao2011733,
title = "A chopper-stabilized high-pass Delta–Sigma Modulator with reduced chopper charge injection",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "733 - 739",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000267",
author = "Yin-Sheng Zhao and Siu-kei Tang and Chi-tung Ko and Kong-pang Pun",
keywords = "High-pass Delta–Sigma Modulator",
keywords = "Chopper stabilization",
keywords = "Amplifier sharing",
abstract = "In this paper, a chopper-stabilized high-pass Delta–Sigma Modulator (DSM) is reported with experimental results. A new circuit technique to suppress the residual offset caused by the chopper switch charge injection is proposed. Enabled by an amplifier sharing architecture, the technique diverts the error charge generated by the critical chopper to the second stage of the modulator such that the resulted error becomes first-order high-pass shaped. Fabricated in a 0.18 μm CMOS technology, the 2nd-order DSM realizes 82 dB dynamic range over a 1 kHz bandwidth while consuming 144 μW from a 1.8 V supply. The offset is 403 μV and the flicker noise is invisible in the measured output spectrum down to 4 Hz. The core area of the chip is 0.16 mm2."
}
@article{Kao2011740,
title = "Clock buffer with duty cycle corrector",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "740 - 744",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.02.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000255",
author = "Shao-Ku Kao and Yong-De You",
keywords = "Duty cycle corrector (DCC)",
keywords = "Buffer",
keywords = "PWCL",
abstract = "A clock buffer with duty cycle corrector circuit is presented. The proposed circuit can generate either 50% duty cycle or conserve the duty cycle as input clock. It corrects the input duty cycle of 10–90% for generated 50% duty cycle of output clock with error less than 0.9%. Moreover, it enhances the input clock signal driving ability and keeps the same duty cycle as input clock within range from 20% to 80% with a maximum duty error of 0.5%. The proposed circuit operation frequency range is from 100 MHz to 1 GHz. The proposed circuit has been fabricated in a 0.18 μm CMOS technology."
}
@article{HungChun2011745,
title = "Switch-controllable dual-hysteresis mode bistable multivibrator employing single differential voltage current conveyor",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "745 - 753",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.01.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000243",
author = "Hung-Chun and Chien",
keywords = "Differential voltage current conveyor",
keywords = "Bistable multivibrator",
keywords = "Dual hysteresis modes",
keywords = "Current conveyor",
abstract = "This paper introduces a simple switch-controllable bistable multivibrator with dual hysteresis modes. The proposed configuration comprises a single differential voltage current conveyor (DVCC) as a main active building block with two external resistors. Both clockwise and counter-clockwise hysteresis operations can be performed using the same topology. The upper and lower threshold voltages of the bistable multivibrator can be adjusted using external passive elements. The operation of the circuit is described in detail with a discussion of the non-ideal effects and other considerations in the design of the proposed circuit. To demonstrate the feasibility of the circuit, researchers built a prototype using commercially available ICs and discrete components. Simulation results and experimental records are presented to confirm the theoretical analysis."
}
@article{BenYishay2011754,
title = "A CMOS low noise amplifier with integrated front-side micromachined inductor",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "754 - 757",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.01.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000231",
author = "Roee Ben Yishay and Sara Stolyarova and Shye Shapira and Moshe Musiya and David Kryger and Yossi Shiloh and Yael Nemirovsky",
keywords = "CMOS post-processing",
keywords = "Integrated inductor",
keywords = "Low noise amplifier (LNA)",
keywords = "Micro electro-mechanical systems (MEMS)",
keywords = "SOC",
abstract = "The paper presents the design and characterization of a low noise amplifier (LNA) in a 0.18 μm CMOS process with a novel micromachined integrated stacked inductor. The inductor is released from the silicon substrate by a low-cost CMOS compatible dry front-side micromachining process that enables higher inductor quality factor and self-resonance frequency. The post-processed micromachined inductor is used in the matching network of a single stage cascode 4 GHz LNA to improve its RF performance. This study compares performance of the fabricated LNA prior to and after post-processing of the inductor. The measurement results show a 0.5 dB improvement in the minimum noise figure and a 1 dB increase in gain, while good input matching is maintained. These results show that the novel low-cost CMOS compatible front-side dry micromachining process reported here significantly improves performance and is very promising for System-On-Chip (SOC) applications."
}
@article{Thakker2011758,
title = "A novel architecture for improving slew rate in FinFET-based op-amps and OTAs",
journal = "Microelectronics Journal",
volume = "42",
number = "5",
pages = "758 - 765",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.01.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626921100022X",
author = "Rajesh A. Thakker and Mayank Srivastava and Ketankumar H. Tailor and Maryam Shojaei Baghini and Dinesh K. Sharma and V. Ramgopal Rao and Mahesh B. Patil",
keywords = "High slew rate op-amp",
keywords = "Look-up table",
keywords = "FinFET",
keywords = "Hierarchical particle swarm optimization",
keywords = "Circuit design",
abstract = "A new architecture for improvement of slew rate (SR) of an op-amp or an operational transconductance amplifier (OTA) in FinFET technology is proposed. The principle of operation of the proposed architecture is based on a set of additional current sources which are switched on, only when OTA should provide a high current, usually for charge or discharge of large load capacitor. Therefore, the power overhead is less compared to conventional high SR designs. The commonly used two-stage Miller-compensated op-amp, designed and optimized in sub 45 nm FinFET technology with 1 V single supply voltage, is used as an example for demonstration of the proposed method. For the same FinFET technology and with optimal design, it is shown that the slew rate of the op-amp is significantly improved. The slew rate is improved from 273 to 5590 V / μ s for an input signal with a rise time of 100 ps. The other performance measures such as gain and phase margin remain unchanged with the additional circuitry used for slew rate enhancement."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "IFC - ",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00042-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000425",
key = "tagkey2011IFC"
}
@article{tagkey2011563,
title = "To the special section constructed from the selected papers of Thermal investigations of integrated circuits and systems, THERMINIC'09",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "563 - ",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.03.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000474",
key = "tagkey2011563"
}
@article{DelValle2011564,
title = "Emulation-based transient thermal modeling of 2D/3D systems-on-chip with active cooling",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "564 - 571",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001576",
author = "Pablo G. Del Valle and David Atienza",
keywords = "Thermal modeling",
keywords = "Transient temperature analysis",
keywords = "FPGA emulation",
keywords = "2D/3D MPSoC",
keywords = "Active cooling",
keywords = "Close-loop systems",
abstract = "State-of-the-art devices in the consumer electronics market are relying more and more on Multi-Processor Systems-On-Chip (MPSoCs) as an efficient solution to meet their multiple design constrains, such as low cost, low power consumption, high performance and short time-to-market. In fact, as technology scales down, logic density and power density increase, generating hot spots that seriously affect the MPSoC performance and can physically damage the final system behavior. Moreover, forthcoming three-dimensional (3D) MPSoCs can achieve higher system integration density, but the aforementioned thermal problems are seriously aggravated. Thus, new thermal exploration tools are needed to study the temperature variation effects inside 3D MPSoCs. In this paper, we present a novel approach for fast transient thermal modeling and analysis of 3D MPSoCs with active (liquid) cooling solutions, while capturing the hardware–software interaction. In order to preserve both accuracy and speed, we propose a close-loop framework that combines the use of Field Programmable Gate Arrays (FPGAs) to emulate the hardware components of 2D/3D MPSoC platforms with a highly optimized thermal simulator, which uses an RC-based linear thermal model to analyze the liquid flow. The proposed framework offers speed-ups of more than three orders of magnitude when compared to cycle-accurate 3D MPSoC thermal simulators. Thus, this approach enables MPSoC designers to validate different hardware- and software-based 3D thermal management policies in real-time, and while running real-life applications, including liquid cooling injection control."
}
@article{Oprins2011572,
title = "Fine grain thermal modeling and experimental validation of 3D-ICs",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "572 - 578",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001606",
author = "H. Oprins and A. Srinivasan and M. Cupak and V. Cherman and C. Torregiani and M. Stucchi and G. Van der Plas and P. Marchal and B. Vandevelde and E. Cheng",
keywords = "Thermal modeling",
keywords = "Design layout",
keywords = "Thermal aware design",
keywords = "3D stacked ICs",
keywords = "Experimental validation",
keywords = "Thermal test chip",
abstract = "3D die stacking is a promising technique to allow miniaturization and performance enhancement of electronic systems. Key technologies for realizing 3D interconnect schemes are the realization of vertical connections, either through the Si die or through the multilayer interconnections. The complexity of these structures combined with reduced thermal spreading in the thinned dies complicate the thermal analysis of a stacked die structure. In this paper a methodology is presented to perform a detailed thermal analysis of stacked die packages including the complete back end of line structure (BEOL), interconnection between the dies and the complete electrical design layout of all the stacked dies. The calculations are performed by 3D numerical techniques and the approach allows importing the full electrical design of all the dies in the stack. The methodology is demonstrated on a 2 stacked die structure in a BGA package. For this case the influence of through-Si vias (TSVs) on the temperature distribution is studied. The modeling results are experimentally validated with a dedicated test vehicle. A thermal test chip with integrated heaters and diodes as thermals sensors is used to successfully validate the detailed temperature profile of the hot spots in the top die of the die stack."
}
@article{Leonov2011579,
title = "Theory and simulation of a thermally matched micromachined thermopile in a wearable energy harvester",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "579 - 584",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001564",
author = "Vladimir Leonov and Paolo Fiorini and Ruud J.M. Vullers",
keywords = "Thermopile",
keywords = "Micromachining",
keywords = "MEMS",
keywords = "Thermal matching",
keywords = "Energy harvesting",
keywords = "Energy scavenging",
abstract = "In this paper, a new theoretical concept in the thermoelectric theory is discussed, which is important for design optimization of a thermoelectric energy harvester. The general conditions are defined, which are required to make a thermoelectric converter effective in energy harvester application. The necessity of the work has been prompted by the fact that while modeling the harvesters neither a constant temperature difference nor a constant heat flow can be assumed. It is shown that the proposed equations allow thermal optimization of energy harvesters to reach their top performance characteristics. The example of thermal optimization in case of MEMS thermopiles is discussed then. It is shown that the knowledge of thermal properties of the environment, i.e., those of a heat source and a heat sink, play the key role in the optimization procedure."
}
@article{Shakoor2011585,
title = "Electrothermally actuated resonant rate gyroscope fabricated using the MetalMUMPs",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "585 - 593",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000893",
author = "Rana I. Shakoor and Shafaat A. Bazaz and M. Burnie and Y. Lai and M.M. Hasan",
keywords = "Finite element method",
keywords = "Micromachined Gyroscope",
keywords = "MEMS",
keywords = "Thermal V shaped actuator",
keywords = "Chevron-shaped actuator",
abstract = "This paper presents an electrothermally actuated resonant microgyroscope fabricated using commercially available standard MEMS process, MetalMUMPs. A Chevron-shaped thermal actuator has been used to drive the proof mass, whereas parallel plate electrodes have been used for sensing the rotation induced Coriolis force. The proposed model consists of three coupled proof masses that are driven together using a frame. To achieve larger bandwidth and increased sensitivity, the microgyroscope is operated with a slight mismatch in the resonant frequencies of the drive and sense-mode. Modal analysis in IntelliSuite predicted the drive and sense-mode resonant frequency at 5.37 and 5.2 kHz, respectively. A brief theoretical description of the resonant microgyroscope and mechanical design considerations of the proposed model are also discussed. Prototype fabrication using MetalMUMPs has also been investigated in this study. Microsystem Analyzer MSA-400 has been used to test the prototype at atmospheric pressure. The resonant frequency of the fabricated device is measured to be 5.98 kHz for the sense-mode. A drive displacement of 4.2 μm peak-to-peak is achieved by the proof mass when the device is operated at 1.3 Vac applied at 2.99 kHz consuming a power of 0.36 W. The proposed device has a size of 1.8×2.0 mm2. The large voltage–stroke ratio and low damping of chevron-shaped thermal actuator compared to traditional comb drive may result in a high quality factor microgyroscope operating at atmospheric pressure."
}
@article{Plesz2011594,
title = "Low cost solar irradiation sensor and its thermal behaviour",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "594 - 600",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001059",
author = "B. Plesz and Á. Földváry and E. Bándy",
keywords = "Irradiation sensor",
keywords = "Spectral behaviour",
keywords = "Solar tracking",
keywords = "PV",
abstract = "This paper presents the working principle, design and thermal characterization of an irradiation sensor. The irradiation measurement device must have accuracy and a reliable construction under outdoor use conditions. The sensor is based on a photoelectric cell and incorporates a read-out circuit for providing steady short circuit conditions for the cell as well as for signal amplification. Thermal tests (HTS, LTOL) were accomplished in a climate chamber in the temperature range of −20 to 80 °C in steps of 10 °C. To determine the fundamentals of the thermal dependence of the sensor cell spectral response measurements under varying temperatures were performed. Measurements show that the self-made solar cell’s thermal dependence was 0.26% °C−1, revealing higher temperature dependence than in the case of an industrial reference cell."
}
@article{Marius2011601,
title = "Power–thermal profiling of software applications",
journal = "Microelectronics Journal",
volume = "42",
number = "4",
pages = "601 - 608",
year = "2011",
note = "Thermal investigations of integrated circuits and systems, THERMINIC' 09",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002272",
author = "Marius and Marcu",
keywords = "Power profiles",
keywords = "Thermal profiles",
keywords = "Thermal management",
keywords = "Energy efficiency",
abstract = "Power consumption and heat dissipation are becoming the major factors that limit the performance evolution of current state-of-the-art microprocessors. As they become key elements in the design of both high performance computers and battery powered devices, different power and thermal management strategies have been proposed and implemented during the last years in order to overcome this performance limitation. Considering that software applications have a large impact on power consumption and thermal map of the CPU cores, these design strategies tend to be addressed at higher levels even as they are usually implemented at lower levels of systems abstraction. The work presented in this paper evaluates the relation between power consumption and thermal response of CPU cores when different software applications are executed. The goal of this study is to identify how software applications can be used in thermal management process and whether it is feasible to implement thermal-aware software applications."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00031-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000310",
key = "tagkey2011IFC"
}
@article{Dobai2011501,
title = "A novel automatic test pattern generator for asynchronous sequential digital circuits",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "501 - 508",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002417",
author = "Roland Dobai and Elena Gramatová",
keywords = "Automatic test pattern generation",
keywords = "Asynchronous circuit",
keywords = "Hazard",
keywords = "Stuck-at fault",
keywords = "State justification",
keywords = "Sequential fault propagation",
abstract = "A novel automatic test pattern generator (ATPG) for stuck-at faults of asynchronous sequential digital circuits is presented. The developed ATPG does not require support by any design-for-testability method nor external software tool. The shortest test sequence generation is guaranteed by breadth-first search. The contribution is unique hazard identification before the test generation process, state justification on the gate level, sequential fault propagation based on breadth-first search and stepwise composition of state graphs for sequential test generation. A new six-valued logic together with a new algorithm was developed for hazardous transition identification. The internal combinational ATPG allows to generate test patterns one by one and only if it is required by sequential test generation. The developed and implemented ATPG was tested with speed-independent and quasi-delay-insensitive benchmark circuits."
}
@article{Qin2011509,
title = "RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "509 - 514",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002405",
author = "Guoxuan Qin and Hao-Chih Yuan and George K. Celler and Weidong Zhou and Jianguo Ma and Zhenqiang Ma",
keywords = "Flexible PIN diode",
keywords = "Microwave",
keywords = "Modeling",
keywords = "Nanomembrane",
keywords = "Plastic substrate",
keywords = "Radio frequency (RF)",
keywords = "Single-crystalline silicon",
abstract = "This paper reports the realization and RF modeling of flexible microwave P-type-Intrinsic-N-type (PIN) diodes using transferrable single-crystalline Si nanomembranes (SiNMs) that are monolithically integrated on low-cost, flexible plastic substrates. With high-energy, high-dose ion implantation and high-temperature annealing before nanomembrane release and transfer process, the parasitic parameters (i.e. resistance, inductance, etc.) are effectively reduced, and the flexible PIN diodes achieve good high-frequency response. With consideration of the flexible device fabrication, structure and layout configuration, a RF model of the microwave single-crystalline Si nanomembrane PIN diodes on plastic substrate is presented. The RF/microwave equivalent circuit model achieves good agreement with the experimental results of the single-crystalline SiNM PIN diodes with different diode areas, and reveals the most influential factors to flexible diode characteristics. The study provides guidelines for properly designing and using single-crystalline SiNMs for flexible RF/microwave diodes and demonstrates the great possibility of flexible monolithic microwave integrated systems."
}
@article{Ding2011515,
title = "An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "515 - 519",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002570",
author = "Zhihao Ding and Guangxi Hu and Jinglun Gu and Ran Liu and Lingli Wang and Tingao Tang",
keywords = "Metal-Oxide-Semiconductor Field-Effect Transistor",
keywords = "Double-gate",
keywords = "Subthreshold swing",
abstract = "An analytical model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Two-dimensional Poisson equation is solved analytically using series method and channel potential is obtained. The analytical expression for subthreshold swing is achieved. Model results are compared with Medici simulation results, both of them turn out to agree very well. The results show the variation of channel potential and subthreshold swing with channel length, gate bias, and oxide thickness, which will provide some guidance for the integrated circuit designs."
}
@article{Song2011520,
title = "FinFET based SRAM bitcell design for 32 nm node and below",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "520 - 526",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002569",
author = "S.C. Song and M. Abu-Rahma and G. Yeap",
keywords = "FinFET",
keywords = "MuGFET",
keywords = "SRAM",
keywords = "Bitcell",
keywords = "32 nm",
keywords = "22 nm",
keywords = "Vccmin",
keywords = "SNM",
keywords = "Icell",
abstract = "The methodology of designing FinFET bitcell is presented in detail. Determination of Fin configuration (i.e., Fin thickness, space, height, and number) in the bitcell involves consideration of both layout and electrical optimization. Once optimized through the proposed method, FinFET bitcell can provide higher cell current, lower leakage current and much lower Vccmin with smaller bitcell area, as compared to planar bitcell, which allows continuous scaling of SRAM bitcell <0.1 μm2 below 32 nm node."
}
@article{Srivastava2011527,
title = "Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "527 - 534",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002867",
author = "Viranjay M. Srivastava and K.S. Yadav and G. Singh",
keywords = "DP4T switch",
keywords = "Radio frequency",
keywords = "RF switch",
keywords = "Double-gate MOSFET",
keywords = "CMOS switch",
keywords = "Symmetric gate configuration",
keywords = "VLSI",
abstract = "In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed."
}
@article{LinSheng2011535,
title = "Nonlinear HEMT model formulated from the second-order derivative of the I–V and Q–V characteristics",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "535 - 544",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002855",
author = "Lin-Sheng and Liu",
keywords = "Large-signal model",
keywords = "Parameter extraction",
keywords = "GaN HEMT",
abstract = "In this paper, an empirical nonlinear model of high electron mobility transistors (HEMTs) suitable for a wide bias range is presented. Unlike the conventional large-signal models whose fitting parameters are coupled to the measured drain current and gate capacitance characteristics, the derived modeling equations are direct formulated from the second-order derivative of drain current (I–V) and gate charge (Q–V) with respect to gate voltage. As a consequence, the proposed nonlinear model is kept continuously differentiable and accurate enough to the higher-order I–V and Q–V derivatives. Besides, the thermal and trapping effects have been implemented in the large-signal model along with its dependence on temperature and quiescent-bias state. The composite nonlinear model is shown to accurately predict the S-parameters, large-signal power performances as well as the two-tone intermodulation distortion products for various types of GaAs and GaN HEMTs."
}
@article{Pable2011545,
title = "High speed interconnect through device optimization for subthreshold FPGA",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "545 - 552",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002880",
author = "S.D. Pable and Mohd. Hasan",
keywords = "FPGA",
keywords = "Subthreshold",
keywords = "Interconnect fabric",
keywords = "Ultra low power",
keywords = "MWCNT",
keywords = "Variability",
abstract = "Field programmable gate array (FPGA) consumes a significant amount of static and dynamic power due to the presence of additional logic for providing more flexibility as compared to application specific integrated circuits (ASICs). The fabrication cost of ASICs is rising exponentially in deep submicron and hence it is important to investigate different techniques for reducing FPGA power consumption so that they can also be employed in place of ASICs in portable energy constrained applications. It is also important to investigate the possibility of extending the use of FPGA even to subthreshold region for ultra low power (ULP) applications. Interconnect resources of an FPGA consumes most of the chip power, area and also determines the overall circuit delay. Subthreshold circuits show orders of magnitude power saving over superthreshold circuits. Improving the performance of subthreshold circuits is a main design challenge at the circuit and device levels to spread their application area. This paper proposes to improve the performance of subthreshold FPGA in terms of delay and switching energy by optimizing and operating interconnect drivers in the near threshold operating region. The possibility of inserting repeaters and the suitability of CNT as an interconnect in the subthreshold region are also explored. The simulation of FPGA interconnect resources using the proposed technique shows 67%, 73.33% and 61.8% increase in speed and 35.72%, 39% and 35.44% reduction in switching energy for Double, Hex and Long interconnect segments, respectively, over the conventional one."
}
@article{Zhu2011553,
title = "New Mix codes for multiple bit upsets mitigation in fault-secure memories",
journal = "Microelectronics Journal",
volume = "42",
number = "3",
pages = "553 - 561",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2011.01.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000036",
author = "Ming Zhu and Li Yi Xiao and Li Li Song and Yan Jing Zhang and Hong Wei Luo",
keywords = "Multiple bit upsets",
keywords = "Multibit error correction codes",
keywords = "Fault-secure memory",
keywords = "ECC",
keywords = "EG-LDPC codes",
keywords = "Single event transient",
abstract = "Nowadays, multibit error correction codes (MECCs) are effective approaches to mitigate multiple bit upsets (MBUs) in memories. As technology scales, combinational circuits have become more susceptible to radiation induced single event transient (SET). Therefore, transient faults in encoding and decoding circuits are more frequent than before. Firstly, this paper proposes a new MECC, which is called Mix code, to mitigate MBUs in fault-secure memories. Considering the structure characteristic of MECC, Euclidean Geometry Low Density Parity Check (EG-LDPC) codes and Hamming codes are combined in the proposed Mix codes to protect memories against MBUs with low redundancy overheads. Then, the fault-secure scheme is presented, which can tolerate transient faults in both the storage cell and the encoding and decoding circuits. The proposed fault-secure scheme has remarkably lower redundancy overheads than the existing fault-secure schemes. Furthermore, the proposed scheme is suitable for ordinary accessed data width (e.g., 2n bits) between system bus and memory. Finally, the proposed scheme has been implemented in Verilog and validated through a wide set of simulations. The experiment results reveal that the proposed scheme can effectively mitigate multiple errors in whole memory systems. They can not only reduce the redundancy overheads of the storage array but also improve the performance of MECC circuits in fault-secure memory systems."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(11)00006-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269211000061",
key = "tagkey2011IFC"
}
@article{AhmedM2011239,
title = "Current conveyor based or unity gain cells based two integrator loop oscillators",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "239 - 246",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002879",
author = "Ahmed M. and Soliman",
keywords = "Nodal admittance matrix synthesis",
keywords = "Nullator",
keywords = "Norator",
keywords = "Pathological voltage mirror",
keywords = "Pathological current mirror",
keywords = "Unity gain cells",
abstract = "Four alternative families of oscillators are considered in this paper, three of the families employ CCII or ICCII or combination of both and each family has sixteen oscillator circuit members. The fourth family uses unity gain cells and has four circuit members. Two alternative transformation methods are used in this paper for the generation of oscillators. The first one uses the adjoint circuit theorem to obtain a new family of current mode oscillators from a voltage mode oscillator circuit. The second transformation method uses the nodal admittance matrix (NAM) expansion to generate a grounded passive element oscillator family from an oscillator circuit, which employs a virtually grounded resistor. Although this paper has a tutorial nature it includes two new families of oscillators; one of them provides both current and voltage outputs and the other provides voltage outputs and is based on the use of voltage, current followers and inverters. Simulation results are included to support the analysis."
}
@article{Xiaohua2011247,
title = "Propagation prediction model and performance analysis of RFID system under metallic container production circumstance",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "247 - 252",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002831",
author = "Cao Xiaohua and Xiao Hanbin",
keywords = "RFID",
keywords = "Propagation prediction model",
keywords = "Metallic container",
abstract = "Radio-wave attenuation negatively affects RF communications in a RFID system. In order to ensure the reliability of RFID system, one must predict the radio-wave path-loss accurately before detailed design. However, it is infeasible to estimate the path-loss for the container RFID systems using the conventional path-loss models such as the Okumura model, two-ray model and so on. This paper firstly focuses on studying the radio propagation mechanism in the container RFID system, analyzing the radio-wave diffraction in the container metallic environment and establishing a mathematic model to estimate the path-loss between the readers and tags. A test in a real container working area was conducted and it was found that the actual measuring results are consistent with the corresponding computing results according to the established path-loss model. The model is further used to analyze some performances of the container RFID system. A group of curves are obtained to show the relationships among the identification distance, the sending power and the BER (bit error rate). The paper is concluded that the TE polarization mode cannot be applied to a container RFID system and the attenuation caused by multi-path propagation will dramatically reduce the recognition reliability of a container RFID system."
}
@article{Khurram2011253,
title = "Novel analysis and optimization of gm-boosted common-gate UWB LNA",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "253 - 264",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002429",
author = "Muhammad Khurram and S.M. Rezaul Hasan",
keywords = "Common gate amplifier",
keywords = "Ultra-wideband",
keywords = "Low-noise amplifier",
keywords = "CMOS noise optimization",
keywords = "gm-boosted LNA",
keywords = "Signal-to-noise ratio",
abstract = "This paper focuses on the design optimization of gm-boosted common gate (CG) CMOS low-noise amplifier (LNA) for ultra-wideband (UWB) wireless technology. In this regard, a detailed novel analysis of the UWB gm-boosted CG amplifier topology is presented, which includes the finite gds (=1/reds) effects. For UWB systems, signal-to-noise ratio (SNR) can be defined as the matched filter bound (MFB). Using this definition, the noise performance of the UWB CG LNA in the presence of the gm-boosting gain and the input noise-matching network are analyzed. It is found that the optimal noise factor of the UWB LNA collapses to the published narrowband gm-boosted CG LNA noise factor when an assumption of narrowband is applied. It is also proved that the noise performance of the gm-boosted UWB CG LNA is independent of the bandwidth of the input UWB signal. A new technique is presented for the design of optimal noise-matching network using passive components at the input of the UWB CG LNA. In this regard, role of the gm-boosting stage and its effect on the SNR and the gain of the overall system are analyzed, and, in addition, its non-idealities are simulated in detail."
}
@article{Korla2011265,
title = "Design and testing of an efficient and compact piezoelectric energy harvester",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "265 - 270",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002466",
author = "S. Korla and R.A. Leon and I.N. Tansel and A. Yenilmez and A. Yapici and M. Demetgul",
keywords = "Piezoelectric energy",
keywords = "Microenergy harvester",
keywords = "Piezoelectric battery",
abstract = "Piezoelectric materials generate electricity when they are subjected to dynamic strain. In this paper compact size self contained energy harvesters were built by considering typical space available for AA size batteries. Each of the harvesters contains a rectifier circuit with four diodes and a capacitor. A series of piezoelectric energy harvesters with circular and square cross-sections were built and tested at different frequency and amplitude levels. On 1 MΩ impedance digital oscilloscope, it was observed that the voltages reached to 16 V (round cross-section) and 25 V (square cross-section) at 50 Hz frequency. The highest power output accomplished was 625 μW. The outputs of both types of the harvesters were very similar at low amplitudes. However, the square cross-section facilitates better attachment of the piezoelectric elements with the harvester shell and worked efficiently at higher amplitudes without immediate failure."
}
@article{Paul2011271,
title = "Trimming process and temperature variation in second-order bandgap voltage reference circuits",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "271 - 276",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000234X",
author = "Rajarshi Paul and Amit Patra",
keywords = "Bandgap voltage reference",
keywords = "PTAT",
keywords = "CTAT",
keywords = "Temperature and process compensation",
keywords = "Post-fabrication trimming design",
keywords = "BiCMOS process",
abstract = "This paper presents the design and experimental performance of a second-order bandgap voltage reference integrated circuit (IC). Experimentally observed nominal reference voltage at room temperature is 1.150 V with best temperature performance of 3 mV variation over −40 to 120 °C. A 5-bit resistor trimming is used to compensate the variation of reference voltage due to layout mismatch and process variation. A trimming methodology is described in this paper to optimize both the temperature performance and reduce the variation of the room temperature voltage over different samples. Even with best temperature performance trim-code, the absolute variation in reference voltage over 20 samples is 85 mV which is trimmed to ±11 mV (1.3%) using the proposed trimming methodology. The second-order bandgap circuit is designed in a 0.5 μm BiCMOS process with less than 50 μA current consumption."
}
@article{Lei2011277,
title = "Low-frequency piezoelectric energy harvesting prototype suitable for the MEMS implementation",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "277 - 282",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002351",
author = "Lei and Gu",
keywords = "Energy harvester",
keywords = "Low frequency",
keywords = "Frequency up-conversion",
abstract = "A low-frequency piezoelectric energy harvester based on impact vibration assembled with a compliant driving beam and two rigid generating beams is presented. The ambient low frequency is up-converted to high resonant frequency by the periodic impact between the driving beam and the generating beams. The advantages of the harvester are: restricting the large displacement of the compliant driving beam, improving power density and being especially suitable for a compact MEMS approach. The 1.53 mW average power of the macroscale impact vibration harvester is achieved at 20.1 Hz under 0.4g acceleration. The power density is 93.2 μW/cm3, which is 6.8 times that of conventional counterpart (13.6 μW/cm3). The measured results demonstrate the potential of the device applied to portable and implantable electronics benefited from the MEMS batch-fabrication technology."
}
@article{Abdelghany2011283,
title = "A low flicker noise direct conversion receiver for IEEE 802.11g wireless LAN using differential active inductor",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "283 - 290",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002843",
author = "M.A. Abdelghany and R.K. Pokharel and H. Kanaya and Keiji Yoshida",
keywords = "Direct conversion receiver",
keywords = "Wireless LAN 802.11g",
keywords = "CMOS analog integrated circuits",
keywords = "Flicker noise",
keywords = "differential active inductor",
abstract = "In this paper, a low flicker-noise, 2.4 GHz direct onversion receiver (DCR) has been designed. A dynamic current injection (DCI) technique has been utilized in addition with a tuning inductor in the mixing stage. The tuning inductor has been replaced by a differential active inductor circuit, which gives the same inductance, with less chip size and high quality factor. The DCR has been designed in a TSMC 0.18 μm 1P6M CMOS process for wireless LAN 802.11g applications. The proposed DCR achieves 6.7 dB SSB-NF, 34 dB conversion gain, −13.5 dBm IIP3, and flicker noise (1/f) corner frequency of 30 kHz with 137.5 mW power consumption from 1.8 V supply voltage."
}
@article{Hwang2011291,
title = "A dual-mode fast-transient average-current-mode buck converter without slope-compensation",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "291 - 298",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002648",
author = "Bo-Han Hwang and Yan-Chong Jhang and Jiann-Jong Chen and Yuh-Shyan Hwang",
keywords = "Buck converter",
keywords = "Average-current-mode",
keywords = "Slope-compensation",
keywords = "Dual-mode",
keywords = "PWM",
keywords = "PFM",
abstract = "A dual-mode fast-transient average-current-mode buck converter without slope-compensation is proposed in this paper. The benefits of the average-current-mode are fast-transient response, simple compensation design, and no requirement for slope-compensation, furthermore, that minimizes some power management problems, such as EMI, size, design complexity, and cost. Average-current-mode control employs two loop control methods, an inner loop for current and an outer one for voltage. The proposed buck converter using the current-sensing and average-current-mode control techniques can be stable even if the duty cycle is greater than 50%. Also, adaptively switch between pulse-width modulation (PWM) and pulse-frequency modulation (PFM) is operated with high conversion efficiency. Under light load condition, the proposed buck converter enters PFM mode to decrease the output ripple. Even more, switching PWM mode realizes a smooth transition under heavy load condition. Therefore, PFM is used to improve the efficiency at light load. Dual-mode buck converter has high conversion efficiency over a wide load conditions. The proposed buck converter has been fabricated with TSMC 0.35 μm CMOS 2P4M processes, the total chip area is 1.45×1.11 mm2. Maximum output current is 450 mA at the output voltage 1.8 V. When the supply voltage is 3.6 V, the output voltage can be 0.8–2.8 V. Maximum transient response is less than 10 μs. Finally, the theoretical analysis is verified to be correct by simulations and experiments."
}
@article{Hossein2011299,
title = "Record gain at 3.1 GHz of 4H-SiC high power RF MESFET",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "299 - 304",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002375",
author = "Hossein and Elahipanah",
keywords = "4H-SiC",
keywords = "MESFET",
keywords = "L-gate",
keywords = "Source field plate",
keywords = "Gain",
keywords = "Frequency",
abstract = "In this paper, a very high gain 4H-SiC power MESFET with incorporation of L-gate and source field plate (LSFP–MESFET) structures for high power and RF applications is proposed. The influence of L-gate and source field plate structures on saturation current, breakdown voltage (Vb) and small-signal characteristics of the LSFP–MESFET was studied by numerical device simulation. The optimized results showed that Vb of the LSFP–MESFET is 91% larger than that of the 4H-SiC conventional MESFET (C-MESFET), which meanwhile maintains almost 77% higher saturation drain current characteristics. The maximum output power densities of 21.8 and 5.5 W/mm are obtained for the LSFP–MESFET and C-MESFET, respectively, which means about 4 times larger output power for the proposed device. Also, the cut-off frequency (fT) of 23.1 GHz and the maximum oscillation frequency (fmax) of 85.3 GHz for the 4H-SiC LSFP–MESFET are obtained compared to 9.4 and 36.2 GHz for that of the C-MESFET structure, respectively. The proposed LSFP–MESFET shows a new record maximum stable gain exceeding 22.7 dB at 3.1 GHz, which is 7.6 dB higher than that of the C-MESFET. To the best of our knowledge, this is 2.5 dB greater than the highest gain yet reported for SiC MESFETs, showing the potential of this device for high power RF applications."
}
@article{Zhou2011305,
title = "Transistor realization of reversible “ZS” series gates and reversible array multiplier",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "305 - 315",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002636",
author = "Rigui Zhou and Yang Shi and Hui’an Wang and Jian Cao",
keywords = "RF gate",
keywords = "CMOS technology",
keywords = "Pass-transistor",
keywords = "“ZS” series gates",
keywords = "Reversible array multiplier",
abstract = "In order to reduce the redundant Toffoli gates and the line-crossings in the classical reversible full adder appearing in the present literatures, this paper gives a reconstructive structure of Fredkin gate, called RF gate, the corresponding quantum equivalent realization and electronic circuitry construction based on CMOS technology and pass-transistor of this gate are also designed in this paper. With the assistance of the RF gate and the basic reversible gates (including NOT gate, CNOT gate and Toffoli gate), we design new 4×4 reversible gates called “ZS” series gates and its corresponding electronic circuitry construction. The proposed “ZS” series gates have the ability to operate reversible add operation between two signed numbers by a single gate and at lower power consumption. At the same time, as an application of “ZS” series gates, this paper also designs reversible array multiplier in order to achieve the signed multiplication. It can be theoretically proved that the proposed reversible array multiplier can eliminate power loss associated with the irreversible operation of classical computer, and will be exponentially lower than reversible parallel multiplier with respect to time complexity."
}
@article{AbouelattaEbrahim2011316,
title = "Modelling of through silicon via and devices electromagnetic coupling",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "316 - 324",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002454",
author = "Mohamed Abouelatta-Ebrahim and Rabah Dahmani and Olivier Valorge and Francis Calmon and Christian Gontrand",
keywords = "Modelling",
keywords = "EM",
keywords = "Devices",
keywords = "TSV",
keywords = "Perturbations",
abstract = "This paper is essentially composed of two parts for future synthesis. We developed 2D and 3D simulations, starting from a 0.35 μm standard CMOS technology, focusing on through silicon via or redistribution layer induced coupling; nMOSFET, pMOSFET, and the sensitive regions of the CMOS inverter are investigated. We also study stacked devices in 3D circuits, in the radiofrequency range, and propagation of electromagnetic waves along some interconnections with discontinuities. This study is performed in the time domain—a finite-difference time-domain method is applied to the analysis of some vias flanked by two striplines, all embedded in silicon. Electric and magnetic field distributions, transmission and reflexion parameters, and pulse propagations along a transverse via are presented."
}
@article{D’Amico2011325,
title = "A 6.9 mA 5 bits 90 nm 1 GS/s ADC without calibration for UWB application",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "325 - 329",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002612",
author = "S. D’Amico and G. Cocciolo and M. De Matteis and A. Baschirotto",
keywords = "ADC",
keywords = "Calibration",
abstract = "Power consumption of high-speed low-resolution ADCs can be reduced by means of calibration. However, this solution presents some drawbacks like allocating a calibration time, calibration algorithm complexity, calibration circuit implementation, etc. In alternative, this paper presents a 5-bit 1 Gs/s ADC without calibration, realized in a 90 nm-CMOS. The device is based on the use of an improved version of double tail dynamic comparators, operating with a fixed bias current. These comparators present a reduced kickback noise, allowing increasing the input transistors sizes in order to improve the matching. The ADC current consumption is equal to 6.9 mA from a 1.2 V supply."
}
@article{Yidong2011330,
title = "Reliability analysis of MOS varactor in CMOS LC VCO",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "330 - 333",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000282X",
author = "Yidong and Liu",
keywords = "Reliability",
keywords = "Voltage-controlled oscillator (VCO)",
keywords = "Phase noise",
keywords = "Positive-bias temperature instability (PBTI)",
keywords = "Channel hot electron (CHE)",
keywords = "Oxide breakdown",
abstract = "The paper investigates the reliability of MOS varactor tuned voltage-controlled oscillators (VCO). Due to the stress induced threshold voltage shift of the MOS varactor, the resonant tank degrades and the center frequency and phase noise of VCO deviate. The behavior is modeled and an adaptive body biasing scheme is proposed to make VCO resilient to reliability. In the mean time it does not degrade the VCO performance. An LC VCO at 24 GHz carrier frequency with adaptive body biasing is compared with VCO without such biasing design in PTM 65 nm technology. The ADS simulation results show that the biasing design helps improve the robustness of the VCO in resonant frequency. The design reduces the frequency sensitivity of VCO by 20% when subjected to threshold voltage degradation."
}
@article{Yacong2011334,
title = "An integrated readout circuit for personal dosimetry with phase-shift compensation technique to improve stability",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "334 - 340",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002624",
author = "Zhang Yacong and Li Jing and Chen Zhongjian and An Huiyao and Zhou Chunzhi and Shao Jianhui",
keywords = "Personal dosimetry",
keywords = "Radiation detection",
keywords = "Readout circuit",
keywords = "Stability",
keywords = "Phase-shift compensation",
abstract = "In this paper an integrated CMOS readout circuit for a radiation detector in a personal dosimeter is presented. High counting rate and low power requirements make the stability of the conventional high-pass pulse shaper a big problem. A novel phase-shift compensation method is proposed to improve the phase margin. The principle of the compensation circuit and its influence on noise performance are analyzed theoretically. A readout chip with two channels of conventional structure and one channel of the proposed structure has been implemented in a 0.35 μm CMOS technology. It occupies an area of 2.113×0.81 mm2. Measurement results show that the proposed channel can process up to 1 MHz counting rate and provide a conversion gain of about 170 mV/fC at a power dissipation of 330 μW with a 3.3 V power supply. Ac-coupled to a silicon PIN detector, it successfully detects β-rays."
}
@article{Li2011341,
title = "Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "341 - 346",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000265X",
author = "Cong Li and Yiqi Zhuang and Ru Han",
keywords = "Cylindrical surrounding gate MOSFETs",
keywords = "Induced source/drain",
keywords = "Short-channel effects",
keywords = "Hot carrier effects",
keywords = "Three-dimensional simulation",
abstract = "A novel cylindrical surrounding gate MOSFETs with electrically induced source/drain extension is proposed and demonstrated by numerical simulation for the first time. In the new device, a constant voltage is applied to the side-gate to form inversion layers acting as the extremely shallow virtual source/drain. Using three-dimensional device simulator, we have investigated the device performance focusing on the threshold voltage roll-off, the drain induced barrier lowering, the subthreshold swing, electrical field and carrier temperature. Based on our simulation results, we demonstrate that the proposed structure exhibits better suppression of short channel effects and hot carrier effects when compared to the conventional cylindrical surrounding gate MOSFETs."
}
@article{Lee2011347,
title = "Automated synthesis of discrete-time sigma-delta modulators from system architecture to circuit netlist",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "347 - 357",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002594",
author = "Shuenn-Yuh Lee and Chih-Yuan Chen and Jia-Hua Hong and Rong-Guey Chang and Mark Po-Hung Lin",
keywords = "Sigma-delta modulator",
keywords = "Automated synthesis",
keywords = "Behavioral modeling",
keywords = "Geometric programming",
keywords = "Transistor sizing",
keywords = "Op-amp synthesis",
abstract = "A synthesis tool consisting of coefficient synthesis of architecture, circuit specifications synthesis, and CMOS operational-amplifier (op-amp) synthesis for discrete-time sigma-delta modulators (SDMs) is presented. In circuit specifications synthesis, several major circuit non-idealities are discussed and modeled. A precise performance prediction with a new design flow of specification synthesis is proposed. A hybrid design methodology composed of equation-based and simulation-based approaches for synthesizing fully differential two-stage and folded-cascode op-amps in 0.35 μ m technology is also presented. Experimental results show that the peak signal-to-noise and distortion ratio (PSNDR) of the fourth-order feed-forward (FF) SDM with an oversampling ratio (OSR) of 64 and a bandwidth of 20 KHz estimated by the proposed synthesis tool is 94.19 dB, and the result of the circuit simulation with folded-cascode op-amp is 93.03 dB. The estimated PSNDR of the third-order multiple-feedback (MF) SDM with an OSR of 32 and a bandwidth of 256 KHz is 59.52 dB, and the HSPICE simulation result is 55.39 dB."
}
@article{Li2011358,
title = "Ultra low power phase detector and phase-locked loop designs and their application as a receiver",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "358 - 364",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002387",
author = "Bo Li and Yiming Zhai and Bo Yang and Thomas Salter and Martin Peckerar and Neil Goldsman",
keywords = "Low power mixer",
keywords = "Phase detector",
keywords = "Ring oscillator",
keywords = "VCO",
keywords = "Phase-locked loops (PLL)",
keywords = "Frequency-modulation (FM) receiver",
keywords = "Frequency-shift keying (FSK)",
abstract = "In this paper, we present a new low power down-conversion mixer design with single RF and LO input topology which consumes 48 μW power. Detailed analysis of the mixer has been provided. Using the presented mixer as a phase-detector, a low power phase-locked loop (PLL) has been designed and fabricated. A PLL based receiver architecture has been developed and analyzed. The circuit has been fabricated through 0.13 μm CMOS technology. Dissipating 0.26 mW from a 1.2 V supply, the fabricated PLL can track signals between 1.62 and 2.49 GHz. For receiver applications, the energy per bit of the receiver is only 0.26 nJ making it attractive for low power applications including wireless sensor networks."
}
@article{Roldán2011365,
title = "A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "365 - 370",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.10.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002338",
author = "Andrés M. Roldán and Juan B. Roldán and Càndid Reig and M.-D. Cubells-Beltrán and Diego Ramírez and Susana Cardoso and Paulo P. Freitas",
keywords = "Verilog-A",
keywords = "Spin-valve",
keywords = "Giant magnetoresistance",
keywords = "Quasi-linear",
keywords = "Thermal model",
keywords = "Circuit simulation",
abstract = "An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model reproduces correctly the experimental measurements obtained for devices with diverse sizes in different electrical and thermal operation regimes."
}
@article{Ribas2011371,
title = "Contributions to the evaluation of ensembles of combinational logic gates",
journal = "Microelectronics Journal",
volume = "42",
number = "2",
pages = "371 - 381",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.11.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002673",
author = "R.P. Ribas and S. Bavaresco and N. Schuch and V. Callegaro and M. Lubaszewski and A.I. Reis",
keywords = "Standard cell library",
keywords = "Library validation",
keywords = "CMOS logic gate",
keywords = "Test circuit",
keywords = "Validation methodology",
keywords = "Digital IC design.",
abstract = "This work presents an effective way for evaluating and validating ensembles of combinational CMOS gates and logic cell libraries. The major contributions include an innovative design methodology for such a kind of test vehicle, as well as a simple and flexible multi-operating mode circuit architecture. The resulting circuit is quite useful for cell library verification at different levels: in the EDA environment and on silicon prototyping. The proposed methodology can be applied for analysis taking into account the logic gate functionality, timing performance, power consumption and circuit operating impact of nanometer aging effects. Simulation results demonstrate the circuit operation, features and facilities described herein."
}
@article{tagkey2011IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "IFC - ",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00269-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002697",
key = "tagkey2011IFC"
}
@article{MikuŁa20111,
title = "Analysis of integrated circuits thermal dynamics with point heating time",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "1 - 11",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002260",
author = "SŁawomir MikuŁa and Andrzej Kos",
keywords = "Thermal dynamics",
keywords = "VlSI",
keywords = "Point heating time",
keywords = "Multi-core systems",
keywords = "Temperature",
keywords = "Scheduling algorithms",
abstract = "The article presents an analysis of thermal dynamics in integrated circuits using a new method. The introduced variable that defines the dynamic state of an IC is point heating time (PHT). The authors examine the dynamic behaviour of the integrated circuit caused by the thermal activity of one and many functional modules on the multi-core chip. Various substrate materials were analysed and the PHT value was compared to the mean temperature of the integrated circuit and its time constant. The PHT value is also analysed as a variable dependent on the distance from the heat centre of the heating module. The analytical equation, which is a result of the analysis, can describe the PHT value versus distance for the whole chip surface. Further analysis helps verify the hypothesis using a massive multi-core integrated circuit. The result can be used to increase the thermal efficiency of multi-core integrated circuits by thermal-aware flow modification of the scheduling algorithm."
}
@article{Ebrahimi201112,
title = "Mitigating soft errors in SRAM-based FPGAs by decoding configuration bits in switch boxes",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "12 - 20",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002259",
author = "Hassan Ebrahimi and Morteza Saheb Zamani and Hamid R. Zarandi",
keywords = "SRAM-based FPGA",
keywords = "Routing architecture",
keywords = "Switch box",
keywords = "Fault mitigation",
keywords = "Single event upset (SEU)",
abstract = "This paper proposes a new switch box architecture in SRAM-based FPGAs to mitigate soft errors. In this switch box architecture, the number of SRAM bits required for programming the switch box is reduced to 67% without any impact on routing capability of the switch box. This architecture does not require any modification of the existing placement and routing algorithms. The architecture was evaluated on several MCNC benchmarks using the VPR tool. Experimental results show that this architecture decreases the susceptibility of switch boxes to SEUs by about 20% on average compared to the traditional ones."
}
@article{Andersson201121,
title = "System of nano-silver inkjet printed memory cards and PC card reader and programmer",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "21 - 27",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002089",
author = "Henrik Andersson and Alexandru Rusu and Anatoliy Manuilskiy and Stefan Haller and Suat Ayöz and Hans-Erik Nilsson",
keywords = "Printed memory",
keywords = "Silvernano ink",
keywords = "Inkjet",
keywords = "Printed electronics",
abstract = "This work describes the development of inkjet printed, low-cost memory cards, and complementary pair of memory card reader and card reader/programmer for PCs. This constitutes a complete system that can be used for various applications. The memory cards are manufactured by inkjet printing nano-silver ink on photo paper substrate. The printed memory structures have an initial high resistance that can later be programmed to specific values representing data on the cards, the so called Write Once Read Many (WORM) memories. The memory card reader measures the resistance values of the memory cells and reads it back to the computer by USB connection. Using multiple resistance levels that represent different states it is possible to have a larger number of selectable combinations with fewer physical bits compared to binary coding. This somewhat counters one of the limitations of resistive memory technology that basically each cell needs one physical contact. The number of possible states is related to the resolution of the reader and the stability of the WORM memory."
}
@article{Chavoshisani201128,
title = "A high-speed current conveyor based current comparator",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "28 - 32",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002077",
author = "R. Chavoshisani and O. Hashemipour",
keywords = "Current comparator",
keywords = "Current conveyor",
keywords = "Positive feedback",
abstract = "In this paper, a new high-speed current mode comparator based on inherent current conveyor and positive feedback properties is presented. This novel approach has resulted in major reduction of the response time and hence a wide band application of the circuit. Simulation results using HSPICE and 0.18 μm CMOS technology with 1.8 V supply confirms a propagation delay of less than 0.4 ns in the high frequency range of 700 MHz with 158 μw power dissipation. Under the above conditions, the accuracy of the input current is as low as 50 nA."
}
@article{DŁugosz201133,
title = "Power efficient asynchronous multiplexer for X-ray sensors in medical imaging analog front-end electronics",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "33 - 42",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002065",
author = "RafaŁ DŁugosz and Pierre-André Farine and Kris Iniewski",
keywords = "Medical imaging",
keywords = "Multiplexers",
keywords = "Asynchronous circuits",
keywords = "Analog front end",
keywords = "X-ray detection",
abstract = "This paper presents a new power efficient asynchronous multiplexer (MUX) for application in analog front-end electronics (AFE) used in X-ray medical imaging systems. Contrary to typical synchronous MUXes that have to be controlled by a clock, this circuit features a simple structure, as the clock is not required. The circuit dissipates power only while detecting the active signals and then automatically turns back to the power down mode. Medical imaging systems usually consist of several dozen to even several hundreds of channels that operate asynchronously. The proposed MUX enables an unambiguous choice of the active channel. In case of two or more channels that become active at the same time the MUX serializes the reading out data from particular channels. This characteristic leads to 100% effectiveness in data processing and no impulses’ loss. The proposed MUX together with an experimental readout ASIC has been implemented in the CMOS 0.18 μm process and occupies 1100 μm2/channel area. It works properly in a wide range of the voltage supply in between 0.8 and 1.8 V. Energy consumed during the detection of one active channel is below 1 pJ, while the detection time is about 1 ns."
}
@article{Yang201143,
title = "A 0.5 V 320 MHz 8 bit×8 bit pipelined multiplier in 130 nm CMOS process",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "43 - 51",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002053",
author = "Wei-Bin Yang and Chao-Cheng Liao and Yung-Chih Liang",
keywords = "Pipelined multiplier",
keywords = "Forward body bias",
keywords = "Modified full adder",
keywords = "New D flip-flop",
abstract = "This paper presents an 8×8 bit pipelined multiplier operating at 320 MHz under 0.5 V supply voltage. Using PMOS forward body bias technique, the modified full adder and the new D flip-flop with synchronous output are combined and implemented in the proposed pipelined multiplier to achieve high operation speed at supply voltages as low as 0.5 V. The proposed pipelined multiplier is fabricated in 130 nm CMOS process. It operates up to 320 MHz and the power consumption is only 1.48 mW at 0.5 V. Moreover, the power consumption of the proposed pipelined multiplier at 0.5 V is reduced over 5.7 times than that of the traditional architecture at 1.2 V. Thus, the proposed 8×8 bit pipelined multiplier is suitable for SoC and dynamic voltage frequency scaling applications."
}
@article{Prommee201152,
title = "CMOS WTA maximum and minimum circuits with their applications to analog switch and rectifiers",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "52 - 62",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002041",
author = "Pipat Prommee and Kittikhun Chattrakun",
keywords = "WTA",
keywords = "Maximum",
keywords = "Minimum",
keywords = "Rectifier",
keywords = "Analog switch",
abstract = "This paper presents design of a voltage-mode multiple-inputs winner-take-all (WTA) maximum (max) and minimum (min) circuits. The proposed circuits are realized in a CMOS technology with low-component counts of transistors. They display usability of the proposed building block, where the maximum bandwidth of voltage follower is around 1 GHz and low-delay time is around 1.5 ns with high-input and low-output impedances. The THD obtained is around 0.8% within the 0.6Vp−p input range. The power dissipation of the proposed circuits is obtained to be around 0.62 mW with ±1.25 V power supplies. In applications, half-wave and full-wave rectifiers and analog switch are included. Computer simulation results by using SPICE program with TSMC 0.25 μm are carried out to show the performance of the proposed WTA max and min circuits, rectifiers and analog switch. In addition, the sample layout of the max circuit occupies an area of around 798 μm2 and post-layout simulation results are exhibited to concrete the pre-layout simulation results."
}
@article{Massimo201163,
title = "Modeling strategies of the input admittance of RC interconnects for VLSI CAD tools",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "63 - 73",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000203X",
author = "Massimo and Alioto",
keywords = "Circuit modeling",
keywords = "Interconnects",
keywords = "RC trees",
keywords = "Modeling",
keywords = "VLSI",
keywords = "Computer aided design",
abstract = "In this paper, models of input admittance of RC interconnects are discussed in depth to understand and evaluate their loading effects on driving CMOS gates. From a detailed analysis of input admittance pole-zero location, arguments are derived to prove that their input admittance can be accurately approximated to that of a low-order equivalent RC circuit, in contrast to the case of timing analysis of RC wires. More specifically, 1st- or 2nd-order equivalent circuits are derived analytically via the moment matching approach, in contrast to previous analyses that rely on purely numerical approaches. Moreover, simple analytical rules to extend results to arbitrarily complex networks are derived, as opposed to the usual approach that requires numerical estimation of moments. Being fully analytical, the proposed approach permits one to develop models that are extremely simple (i.e. computationally efficient), as well as to gain an insight into the properties of input admittance of RC interconnects.
The proposed equivalent circuits are evaluated and validated in situations that occur in real CAD design flows, where RC wire loading effects are estimated by CAD tools to perform the timing/power analysis of the buffer driving the wire. The analysis is validated through extensive simulations on a 65 nm CMOS technology. Well-defined criteria are also derived to select the appropriate model of RC wire input admittance for accurate timing/power estimations in VLSI CAD tools."
}
@article{Song201174,
title = "A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 μm high voltage (650 V) DIMOS process",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "74 - 81",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002028",
author = "Ki-Nam Song and Hyoung-Woo Kim and Ki-Hyun Kim and Kil-Soo Seo and Seok-Bung Han",
keywords = "Half bridge driver",
keywords = "High voltage integrated circuits",
keywords = "High voltage level shifter",
keywords = "Common mode noise",
keywords = "LLC resonant converter",
abstract = "In this paper, a half bridge convert driver IC with novel common mode rejection technique is designed and implemented in 1.0 μm high voltage (650 V) Dielectric Isolation MOS (DIMOS) process. The Designed IC is suitable for medium power (under 500 W) applications such as consumer electronics. Half bridge converter driver IC with a novel common mode rejection technique, which is composed of noise filter and set inhibitor, shows high dv/dt noise immunity up to 66.67 V/ns. Spectre simulation was performed to verify the electrical characteristics of the designed IC."
}
@article{Karthigaikumar201182,
title = "FPGA and ASIC implementation of robust invisible binary image watermarking algorithm using connectivity preserving criteria",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "82 - 88",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001928",
author = "P. Karthigaikumar and K. Baskaran",
keywords = "Watermarking",
keywords = "FPGA",
keywords = "ASIC",
keywords = "Multimedia",
keywords = "Low power VLSI",
abstract = "Digital watermarking is the process of hiding information into a digital signal to authenticate the contents of digital data. There are number of watermarking algorithm implemented in software and few in hardware. This paper discusses the implementation of robust invisible binary image watermarking algorithm in Field Programmable Gate Array (FPGA) and Application Specific Integrated Circuits (ASIC) using connectivity preserving criteria. The algorithm is processed in spatial domain. The algorithm is prototyped in (i) XILINX FPGA (ii) 130 nm ASIC. The algorithm is tested in Virtex-E (xcv50e-8-cs144) FPGA and implemented in an ASIC."
}
@article{Haghdad201189,
title = "Floorplanning for low power IC design considering temperature variations",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "89 - 95",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001916",
author = "Kian Haghdad and Mohab Anis and Yehea Ismail",
keywords = "Floorplanning",
keywords = "Optimization",
keywords = "Low power design",
keywords = "Thermal uniformity",
keywords = "Leakage power",
keywords = "Temperature variations",
abstract = "Non-uniformity in thermal profiles of integrated circuits (ICs) is an issue that threatens their performance and reliability. This paper investigates the correlation between the total power consumption and the temperature variations across a chip. As a result, floorplanning guidelines are proposed that uses the correlation to efficiently optimize the chip's total power and takes into account the thermal uniformity. It is demonstrated that optimizing a floorplan to minimize either the leakage or the peak temperature can lead to a significant increase in the total power consumption. In this paper, the experimental results show that lowering the temperature variations across a chip not only addresses performance degradation and reliability concerns, but also significantly contributes to chip power reduction. In addition, it is found that although uniformity in the thermal profile can be very effective in lowering the total power consumption, the most uniform temperature distribution does not necessarily correspond to the highest power savings. Consequently, for some applications, a 2% deviation from the minimum total power is traded for up to a 25% increase in thermal uniformity. The presented method is implemented for an Alpha 21264 processor running Spec 2000 benchmarks."
}
@article{Agarwal201196,
title = "Design and simulation of octal-to-binary encoder using capacitive single-electron transistors (C-SETs)",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "96 - 100",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001904",
author = "Pankaj B. Agarwal and A. Kumar",
keywords = "Octal-to-binary encoder",
keywords = "Single-electron transistor",
keywords = "C-SET",
keywords = "Nanoelectronics",
abstract = "This paper presents an octal-to-binary encoder that is designed using capacitive single-electron transistors (C-SETs). The design parameters are calculated by considering each C-SET as a switching device in pull-up configuration. Logic circuit is based on voltage state logic. The designed circuit was simulated using SIMON 2.0, which is based on Monte Carlo and master equation (MC–ME) methods. The simulation results verify the operation of octal-to-binary encoder."
}
@article{Yang2011101,
title = "Impacts of gate-oxide breakdown on power-gated SRAM",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "101 - 112",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001898",
author = "Hao-I Yang and Wei Hwang and Ching-Te Chuang",
keywords = "Gate-oxide breakdown",
keywords = "Power-gating technology",
keywords = "SRAM",
abstract = "This paper presents a detailed analysis on the impacts of various gate-oxide breakdown (BD) paths in column-based header- and footer-gated SRAMs. It is shown that with gate-oxide BD, the read static noise margin (RSNM) and write margin (WM) degrade in general. Pass-transistor gate-oxide BD between WL and BL is shown to degrade read/write margin and performance, and to affect other healthy cells along the same column as well. The effects of gate-to-source BD of cell transistors are shown to confine to the individual cells, while multiple cells suffering cell transistor drain-to-drain BD in a column could cumulatively affect VVDD (header structure) or VVSS (footer structure), thus influencing other cells in the same column. In particular, we show that the gate-oxide BD of the power-switches has severe and even detrimental effects on the margin, stability, and performance of the SRAM array. Several techniques to mitigate the power-switch gate-oxide BD have been evaluated, including adding a gate series resistance to the power-switch, dual threshold voltage power-switch, thick gate-oxide power-switch, and dual gate-oxide thickness (dual-TOX) power-switch. It is shown that the dual-TOX power-switch improves the time-to-dielectric-breakdown (TBD) of the power-switch while maintaining the performance without side effect."
}
@article{JunDa2011113,
title = "A low-voltage high-linearity ultra-wideband down-conversion mixer in 0.18-μm CMOS technology",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "113 - 126",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001886",
author = "Jun-Da and Chen",
keywords = "Gilber-cell mixers",
keywords = "UWB",
keywords = "MGTR",
keywords = "IIP3",
abstract = "This paper presents a wideband mixer chip covering the frequency range from 3.4 to 6.8 GHz using TSMC 0.18 μm CMOS technology. The linearity can be improved using multiple-gated-transistors (MGTR) topology. The measured 3-dB RF frequency bandwidth is from 3.1 to 6.8 GHz with an IF of 10 MHz. The measured results of the proposed mixer achieve 7.2–4.3 dB power conversion gain and 2–3 dBm input third-order intercept point (IIP3), and the total dc power consumption of this mixer including output buffers is 2.9 mW from a 1 V supply voltage. The current output buffer is about 2.17 mW, and the excellent LO–RF isolation achieved up to 54 dB at 5 GHz. The paper presents a mixer topology that is very suitable for low-power in ultra-wideband system applications."
}
@article{Mukhiya2011127,
title = "Experimental study and analysis of corner compensation structures for CMOS compatible bulk micromachining using 25 wt% TMAH",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "127 - 134",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001874",
author = "R. Mukhiya and A. Bagolini and T.K. Bhattacharyya and L. Lorenzelli and M. Zen",
keywords = "Corner compensation",
keywords = "Bulk micromachining",
keywords = "TMAH anisotropic etching",
keywords = "Accelerometer",
abstract = "In the present work, most common compensation structures (〈1 1 0〉 squares and 〈1 0 0〉 bars) have been used for convex corner compensation with 25 wt% TMAH–water solution at 90±1 °C temperature. Etch flow morphology and self-align properties of the compensating structures have been investigated. For 25 wt% TMAH water solution {3 1 1} plane is found to be responsible for corner undercutting, which is the fast etch plane. Etch-front-attack angle is measured to be 24°. Generalized empirical formulas are also discussed for these compensation structures for TMAH–water solution. 〈1 1 0〉 square structure protects mesa and convex corner and is the most space efficient compared to other compensation structures, but unable to produce perfect convex corner as 〈1 0 0〉 bar type structures. Both the 〈1 0 0〉 bar structures provide perfect convex corners, but 〈1 0 0〉 wide bar structure is more space efficient than the 〈1 0 0〉 thin bar structure. Implications of these compensation structures with realization of accelerometer structure have also been discussed. A modified quad beam accelerometer structure has been realized with these compensation structures using 25 wt% TMAH."
}
@article{Jaikla2011135,
title = "Resistorless dual-mode quadrature sinusoidal oscillator using a single active building block",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "135 - 140",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001862",
author = "Winai Jaikla and Montree Siripruchyanun and Abhirup Lahiri",
keywords = "Active C circuits",
keywords = "Quadrature sinusoidal oscillator",
keywords = "Resistorless",
keywords = "Differential voltage current-controlled conveyor transconductance amplifier (DVCCCTA)",
abstract = "This paper presents a new realization of resistorless mixed-mode (i.e. both voltage-mode and current-mode) quadrature sinusoidal oscillator using a new active building block (ABB) called the differential voltage current-controlled conveyor transconductance amplifier (DVCCCTA). The proposed oscillator circuit uses a single DVCCCTA, two grounded capacitors (GCs) and does not employ any external linear resistors. The tuning laws for the condition of oscillation (CO) and the frequency of oscillation (FO) are non-interactive; and controlled by separate bias currents. The circuit provides two explicit quadrature current outputs and two quadrature voltage outputs and thus can be classified as a mixed-mode quadrature oscillator. Another notable feature of the proposed circuit is that it can also be used as a biquadratic filter to realize low-pass and band-pass filtering functions simultaneously. Non-ideal analysis of the circuit is provided and PSpice simulation results have been included to verify the workability of the proposed circuit."
}
@article{Sira2011141,
title = "A cascode modulated class-E power amplifier for wireless communications",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "141 - 147",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001850",
author = "Daniel Sira and Pia Thomsen and Torben Larsen",
keywords = "Cascode",
keywords = "Class-E",
keywords = "CMOS",
keywords = "Dynamic range",
keywords = "EDGE",
keywords = "Polar modulation",
keywords = "RF power amplifier",
abstract = "A cascode modulated CMOS class-E power amplifier (PA) is presented in this paper. It is shown that by applying a modulated signal to the gate of the cascode transistor the output power is modulated. The main advantage of the proposed technique is a high 35 dB output power dynamic range. The peak power added efficiency (PAE) is 35%. The concept of the cascode power control of class-E RF PA operating at 2.2 GHz with 18 dBm output power was implemented in a 0.18 μ m CMOS technology and the performance has been verified by measurements. The prototype CMOS PA is tested by single tone excitation and by enhanced data rates for GSM evolution (EDGE) modulated signal. Digital predistortion is used to linearize the transfer characteristic. The EDGE spectrum mask is met and the rms error vector magnitude (EVM) is less than 4° in the entire output power range."
}
@article{Quintanilla2011148,
title = "Detailed analysis of the effect of a hysteretic quantizer in a multibit, Sigma-Delta modulator",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "148 - 157",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001849",
author = "L. Quintanilla and J. Arias and J. Segundo and L. Enriquez and J.M. Hernandez-Mangas and J. Vicente",
keywords = "Hysteretic quantizer",
keywords = "Sigma-Delta modulator",
keywords = "Finite bandwidth in amplifiers",
keywords = "Excess loop delay",
abstract = "A detailed analysis of the impact of a hysteretic quantizer on a multibit, Sigma-Delta modulator has been carried out in this paper. Both discrete-time and continuous-time modulators have been considered. A qualitative modeling of the hysteretic quantizer based on a hysteretic block followed by an ideal quantizer was proposed. Due to the hysteresis effect, the quantizer output signal is delayed and distorted with respect to the quantizer input signal, where the delay causes a phase-shift independent on the signal frequency. Yet, the effect of the hysteresis depends on the input signal amplitude. This model was validated by using system-level simulations for a second order, 3-bit, discrete-time Sigma-Delta modulator. A linear model for hysteresis was derived by assuming a narrow hysteresis cycle. The quantizer input signal plays a fundamental role in the discussion. In order to include this signal into the linear analysis some approximations are proposed. The quantizer output signal is decomposed by the use of the Fourier series analysis only into the in-phase and quadrature components (with respect to the input signal) whose Fourier series coefficients can be analytically calculated. A quantitative analysis for both a second order, 3-bit, DT and CT Sigma-Delta modulators including a hysteretic quantizer was carried out. For the CT modulator, finite GBW in amplifiers, excess loop delay, and a hysteretic quantizer were considered separately and combined. A good agreement with both system-level simulations and experimental results is found, despite the approximations considered for the quantizer input signal."
}
@article{Jalili2011158,
title = "Inter-channel offset and gain mismatch correction for time-interleaved pipelined ADCs",
journal = "Microelectronics Journal",
volume = "42",
number = "1",
pages = "158 - 164",
year = "2011",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001837",
author = "Armin Jalili and Sayed Masoud Sayedi and J Jacob Wikner",
keywords = "Analog–digital conversion",
keywords = "Calibration",
keywords = "Chopping",
keywords = "Gain error",
keywords = "Offset error",
keywords = "Parallel pipelined ADC",
abstract = "This paper presents a digital background calibration technique to compensate inter-channel gain and offset errors in parallel, pipelined analog-to-digital converters (ADCs). By using an extra analog path, calibration of each ADC channel is done without imposing any changes on the digitizing structure, i.e., keeping each channel completely intact. The extra analog path is simplified using averaging and chopping concepts, and it is realized in a standard 0.18 ‐ μ m CMOS technology. The complexity of the analog part of the proposed calibration system is same for a different number of channels.
Simulation results of a behavioral 12-bit, dual channel, pipelined ADC show that offset and gain error tones are improved from −56.5 and −58.3 dB before calibration to about −86.7 and −103 dB after calibration, respectively."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00248-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000248X",
key = "tagkey2010IFC"
}
@article{Muhammad2010801,
title = "On the assessment of few design proposals for 4H-SiC BJTs",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "801 - 808",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001187",
author = "Muhammad and Nawaz",
keywords = "4H-SiC BJTs",
keywords = "SiC devices",
keywords = "Device simulation",
keywords = "Power devices",
keywords = "TCAD",
abstract = "A theoretical design analysis using two-dimensional numerical computer aided design tool (TCAD) is presented for 4H-SiC BJTs. Compared to conventional design, a high p-doped thin layer between the base–emitter region is effective to suppress the surface recombination between the base–emitter region. Using a surface recombination layer (SR layer of 60 nm thickness and acceptor doping of 1.0×1019 cm−3) between base–emitter region, a peak gain of 410 was obtained at 100 A/cm2. While a second epitaxy growth run is needed to utilize the advantage of this design, an alternate design with thin high doped (i.e., delta layer design) layer at the base–emitter junction is also interesting from the point of view of improving current gain with reduced on-resistance. A delta layer design thus produces a peak current gain of 300 at 100 A/cm2 and on-resistance value of 4 mΩ-cm2 at 300 K. Compared to the experimental data of 4H-SiC BJTs, present simulated analysis provides superior performance in terms of current gain."
}
@article{Ding2010809,
title = "Design of a high-speed sample-and-hold circuit using a substrate-biasing-effect attenuated T switch",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "809 - 814",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001205",
author = "Koubao Ding and Kunming Cai and Yan Han",
keywords = "Sample-and-hold",
keywords = "Substrate biasing effect",
keywords = "T switch",
abstract = "A circuit technique for designing a high speed sample-and-hold circuit is proposed. A substrate-biasing-effect attenuated T switch is used during the hold mode of sample-and-hold circuit, the T type structure makes the input-dependent signal feed-through effect neglectable, and a high linearity performance can be assured. Based on SMIC 0.13 μm Standard CMOS process, a sample-and-hold circuit applicable to 12bit, 100 MHz Pipelined ADC is designed. Spectre simulation results show that the using this technique can improve the dynamic performance and the signal-to-noise and distortion ratio (SNADR) and spurs free dynamic range (SFDR) of the sample-and-hold circuit is 85.5 and 92.87 dB, respectively, under the Nyquist input frequency ."
}
@article{Lee2010815,
title = "Oscillation-controlled CMOS ring oscillator for wireless sensor systems",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "815 - 819",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001230",
author = "Wang-Hoon Lee and Bon-Ju Gu and Yoshio Nishida and Hidekuni Takao and Kazuaki Sawada and Makoto Ishida",
keywords = "Ring oscillator",
keywords = "Oscillation control",
keywords = "Low power consumption",
keywords = "Duty cycle",
abstract = "This paper presents a ring oscillator with the function of the oscillation controlled for wireless sensor systems (WSSs). The proposed oscillator consists of a NAND gate, 4 inverters, and 1-, 3-, 9-times buffer stage. Operation of it is controlled by the NAND gate. The oscillator can reduce the power loss because the oscillator is oscillated during only high level input. The proposed oscillator was designed and fabricated by 2.5 μm CMOS technology, through which it is possible to realize a WSS on a single chip because a sensor and an oscillator can be fabricated concurrently.
The frequency tuning range of the oscillator was found to be approximately 90–152 MHz and the output power of the oscillator was −8.42 dBm. The measured phase noise is −99.35 and −102.59 dBc/Hz at 1 and 5 MHz offsets, respectively, from the carrier of 152 MHz. Power consumption of the oscillator is determined by the duty cycle of the input signal pulse, and the range of power consumption was measured as 1.5–45 mW at the duty cycle of 1.0."
}
@article{Navi2010820,
title = "A new quantum-dot cellular automata full-adder",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "820 - 826",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001242",
author = "Keivan Navi and Razieh Farazkish and Samira Sayedsalehi and Mostafa Rahimi Azghadi",
keywords = "Quantum-dot cellular automata",
keywords = "Majority gate",
keywords = "Nanoelectronic circuits",
keywords = "QCA full-adder",
abstract = "A novel expandable five-input majority gate for quantum-dot cellular automata and a new full-adder cell are presented. Quantum-dot cellular automata (QCA) is an emerging technology and a possible alternative for semiconductor transistor based technologies. A novel QCA majority-logic gate is proposed. This component is suitable for designing QCA circuits. The gate is simple in structure and powerful in terms of implementing digital functions. By applying these kinds of gates, the hardware requirement for a QCA design can be reduced and circuits can be simpler in level, gate counts and clock phases. In order to verify the functionality of the proposed device, some physical proofs are provided. The proper functionality of the FA is checked by means of computer simulations using QCADesigner tool. Both simulation results and physical relations confirm our claims and its usefulness in designing every digital circuit."
}
@article{Riyadi2010827,
title = "Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "827 - 833",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001254",
author = "Munawar A. Riyadi and Ismail Saad and Razali Ismail",
keywords = "Vertical MOSFET",
keywords = "Oblique rotating ion implantation",
keywords = "Double gate",
keywords = "Silicon thickness effect",
keywords = "Fully depleted",
abstract = "The rapid scaling of integrated circuit requires further shrinkage of lateral device dimension, which correlates with pillar thickness in vertical structure. This paper investigates the effect of pillar thickness variation on vertical double gate MOSFET (VDGM) fabricated using oblique rotating ion implantation (ORI) method. For this purpose, several scenarios of silicon pillar thickness tsi were evaluated for 20–100 nm channel length. The source region was found to merge at pillar thickness below 75 nm, which results in floating body effect and creates isolated region in the middle of pillar. The vertical devices using ORI method show better performance than those with conventional implantation method for all pillar thickness, due to the elimination of corner effect that degrades the gate control. The presence of isolated depletion region in the middle of pillar at floating body increases parasitic effect for higher drain potential. By further reduction of pillar thickness towards fully depleted feature, the increase in gate-to gate charge coupling improves the performance of ORI-based vertical double gate MOSFET, as evident in near-ideal swing value and lower DIBL, compared to the partially depleted and body-tied device."
}
@article{Hassan2010834,
title = "Stability analysis of circuits including BJT differential pairs",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "834 - 839",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001291",
author = "Hassan and Fathabadi",
keywords = "Robust",
keywords = "Stability",
keywords = "Uncertainty",
keywords = "Perturbation",
abstract = "In this paper, a necessary and sufficient condition for robust stability of electronic circuits at high frequency, which contain differential pair (emitter–coupled pair), is proposed. In fact, when emitter–coupled pairs are used as one input signal–one output signal, they have uncertainty in their transfer functions at high frequency. Even it is shown that this uncertainty can cause instability in closed loop electronic circuits at high frequency.
The uncertainty is modeled as multiplicative perturbation in the transfer function of the differential pair at high frequency. Based on this uncertainty model, a necessary and sufficient condition for robust stability of above electronic circuits at high frequency is presented. This condition guarantees internal stability of the circuit at high frequency with respect to the uncertainty."
}
@article{Chen2010840,
title = "A dual-loop shunt regulator using current-sensing feedback techniques",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "840 - 844",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001308",
author = "Jiann-Jong Chen and Bo-Han Hwang and Yuh-Shyan Hwang",
keywords = "Fast-transient response",
keywords = "Active feedback",
keywords = "Shunt regulator",
abstract = "The dual-loop shunt regulator using current-sensing feedback techniques is proposed in this paper. This architecture adopts a voltage and current loops to increase the transient response of the proposed shunt regulator. The maximum output current of the proposed shunt regulator is 180 mA at a 1.8 V output. Moreover the architecture of the proposed shunt regulator can suppress the stray effect which is from power supply. The prototype of the proposed shunt regulator is fabricated by the Taiwan Semiconductor Manufacturing Corporation (TSMC) 0.35-μm CMOS 2P4M process. The active area is only 579×355 μm2."
}
@article{Nongaillard2010845,
title = "Design for manufacturing of 3D capacitors",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "845 - 850",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000131X",
author = "M. Nongaillard and F. Lallemand and B. Allard",
keywords = "3D capacitors",
keywords = "3D structures",
abstract = "3D capacitor design parameters have been evaluated in order to improve the capacitance per unit die area. The geometrical issues as well as the process manufacturing issues are both investigated. The main manufacturing issues have been experimentally tested: etching, deposition and warpage of the wafer. An improvement has been observed for the robustness of 3D structures and the density of the capacitor has been increased for several proposed 3D pattern. All capacitors tested in this paper are realised with PICS technology."
}
@article{Tae2010851,
title = "900 MHz CDMA/1.8 GHz PCS/450 MHz CDMA RF receiver ICs with a new mixer linearization method and optimization of integrated inductor for single balance mixer LO buffer",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "851 - 859",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001321",
author = "Tae and Wook Kim",
keywords = "Metal mask",
keywords = "Mixer",
keywords = "Linearization",
keywords = "LO buffer",
keywords = "IIP3",
keywords = "Single balanced mixer",
abstract = "900 MHz CDMA, 1.8 GHz PCS, and 450 MHz CDMA RF receivers are implemented and measured. In order to reduce NRE cost and meet the demand of fast time-to-market, a metal-mask configurable method is applied for those receivers using only upper metals, contact and via layers. Also to reduce power consumption, a new mixer linearization method is proposed, along with an optimization methodology of an integrated inductor for a single balance mixer LO buffer, with respect to power consumption and silicon area. In order to apply the proposed inductor optimization methodology into metal-mask configurable circuits, inductor design considerations for metal-mask variant circuits are presented. With the proposed linearization technique and inductor optimization method, low power 900 MHz CDMA/1.8 GHz PCS/450 MHz CDMA mixers are obtained. The proposed receivers are fabricated in a 0.35 μm SiGe BiCMOS process. In the 900 MHz CDMA case, measurement results of the proposed mixer show 12 dBm IIP3 and 10.2 dB conversion gain, and 7.5 dB SSB NF with 10.5 mA current consumption at 2.7 V supply voltage."
}
@article{Dau2010860,
title = "Integrated CNTs thin film for MEMS mechanical sensors",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "860 - 864",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001333",
author = "Van Thanh Dau and Takeo Yamada and Dzung Viet Dao and Bui Thanh Tung and Kenji Hata and Susumu Sugiyama",
keywords = "MEMS process",
keywords = "EB",
keywords = "CNTs film",
keywords = "SWNT",
keywords = "Super growth",
keywords = "Piezoresistive effect",
keywords = "Gauge factor",
abstract = "This paper reports the top-down fabrication of CNTs thin film on MEMS structure, and characterization of piezoresistive coefficients of aligned single wall carbon nanotube (SWNT) forest film. The film was synthesized by water-assisted chemical vapor deposition (CVD), a process known as “super growth”. CNTs film was condensed, manually maneuvered and conveniently patterned by EB lithography to form desirable shapes. The longitudinal and transverse gauge factors of the CNTs thin film were measured to be 3.75 and 0.67, respectively."
}
@article{Saeedivahdat2010865,
title = "Effect of thermal stresses on stability and frequency response of a capacitive microphone",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "865 - 873",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001345",
author = "Armin Saeedivahdat and Fatemeh Abdolkarimzadeh and Ashkan Feyzi and Ghader Rezazadeh and Saeed Tarverdilo",
keywords = "MEMS",
keywords = "Capacitive microphone",
keywords = "Thermal stresses",
keywords = "Stability",
keywords = "Frequency response",
abstract = "This article deals with effects of thermal stresses on stability and frequency response of a fully clamped circular microplate, which acts as the diaphragm of a capacitive MEMS microphone. Static and dynamic pull-in phenomena limit the stable regions of a capacitive MEMS microphone. The results show that the non-dimensional static pull-in voltage of the studied case is about 5.23 (38.6 V). On the other hand, according to the results, the non-dimensional dynamic pull-in of the diaphragm is about 4.74 (34.98 V), which is as low as 90.63% of the static pull-in threshold. Because of the thermal expansion coefficient, diaphragm temperature increment leads to compressive thermal stresses and conversely, decrement of the diaphragm temperature creates tensile thermal stresses. The effect of temperature on the pull-in parameters is given by a design-correcting factor.
As results demonstrate, the deflection of the diaphragm subjected to a given electrostatic force can be controlled by means of the temperature changes. In the absence of electrostatic force, as the results show, although temperature changes do not create any deflection, but for a critical temperature increment the diaphragm stiffness vanishes and the buckling phenomenon takes place. Effects of the electrostatic force and the temperature variation on the frequency response of the microphone subjected to a sound pressure wave are investigated. As the results illustrate, increment of the electrostatic force or increment of the diaphragm temperature increases the output level and sensitivity of the microphone and decreases the fundamental frequency of the microphone, limiting the upper band of its bandwidth. It is obvious that decrement of the diaphragm temperature acts conversely. In addition, the results show that in the presence of the electrostatic force sensitivity of the output level of the diaphragm to the temperature change increases."
}
@article{CarretoVazquez2010874,
title = "Miniaturized calorimeter for thermal screening of energetic materials",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "874 - 881",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001527",
author = "V.H. Carreto-Vazquez and A.K. Wójcik and Y.-S. Liu and D.B. Bukur and M.S. Mannan",
keywords = "Chip-scale calorimeters",
keywords = "Energetic materials",
keywords = "Explosives",
keywords = "Microfabrication",
keywords = "Finite element analysis",
abstract = "The use of chip-scale calorimeters for research and development has increased during the last two decades. The high sensitivity of these devices allows their use for characterization of very small amounts of sample. However, the potential for using them for screening of highly energetic materials (i.e., explosives) has not been fully explored. In this paper, we present the design aspects of two chip-scale calorimeter prototypes based on thick silicon membranes for liquid and solid thermal characterizations. The ultimate goal of the proposed work is to produce a portable calorimeter that can be incorporated as a new approach for detection of highly energetic materials such as explosives based on the information obtained from the calorimeter. The concept of this application is that indirect detection via the determination of thermal energy released in exothermic reactions can be detected by chip-scale calorimetric sensors. Details about the calorimeter design using finite element analysis are presented along with the fabrication procedure of the proposed sensor. Finally, preliminary results that provide experimental validation of the device design are presented."
}
@article{Ahn2010882,
title = "A highly linear receiver front-end employing modified derivative superposition method with tuned inductors for 5.25 GHz",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "882 - 888",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001539",
author = "Youngbin Ahn and Chiwan Park and Jaehoon Lee and Jichai Jeong",
keywords = "Front-end",
keywords = "LNA",
keywords = "Mixer",
keywords = "Derivative superposition method",
keywords = "Linearization",
abstract = "We design a highly linear CMOS RF receiver front-end operating in the 5 GHz band using the modified derivative superposition (DS) method with one- or two-tuned inductors in the low noise amplifier (LNA) and mixer. This method can be used to adjust the magnitude and phase of the third-order currents at output, and thus ensure that they cancel each other out. We characterize the two front-ends by the third-order input intercept point (IIP3), voltage conversion gain, and a noise figure based on the TSMC 0.18 μm RF CMOS process. Our simulation results suggest that the front-end with one-tuned inductor in the mixer supports linearization with the DS method, which only sacrifices 1.9 dB of IIP3 while the other performance parameters are improved. Furthermore, the front-end with two-tuned inductors requires a precise optimum design point, because it has to adjust two inductances simultaneously for optimization. If the inductances have deviated from the optimum design point, the front-end with two-tuned inductors has worse IIP3 characteristic than the front-end with one-tuned inductor. With two-tuned inductors, the front-end has an IIP3 of 5.3 dBm with a noise figure (NF) of 4.7 dB and a voltage conversion gain of 23.1 dB. The front-end with one-tuned inductor has an IIP3 of 3.4 dBm with an NF of 4.4 dB and a voltage conversion gain of 24.5 dB. There is a power consumption of 9.2 mA from a 1.5 V supply."
}
@article{Košel2010889,
title = "Non-linear thermal modeling of DMOS transistor and validation using electrical measurements and FEM simulations",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "889 - 896",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001540",
author = "Vladimír Košel and Robert Illing and Michael Glavanovics and Alexander Šatka",
keywords = "Silicon thermal properties",
keywords = "DMOS",
keywords = "Temperature sensor",
keywords = "Smart power switch",
keywords = "Geometrical modeling",
keywords = "FEM simulation",
abstract = "The relevance of thermally non-linear silicon material models for transient thermal FEM simulations of smart power switches (SPS) is proved by a power silicon test device consisting of two power transistors and eleven integrated temperature sensors distributed over the silicon die. The test device is heated up by turning on an integrated power transistor in short-circuit for several milliseconds at two different initial temperatures. These thermal events correspond to a real situation that can occur in the application. The power dissipation in the power transistor is calculated from the measured source current and drain-source voltage, and subsequently used as an input to the FEM simulation. The temperature change on the test chip is measured by the integrated temperature sensors. An FEM model of the test chip encapsulated in a plastic package has been built in the FlexPDE simulator. The emphasis is put on the macroscopic modeling of the power transistor where an electro-thermal approach is reduced to a purely thermal one. Finally, the thermal events are simulated using FEM and compared to the temperature measurements. The results have shown that our modeling approach including non-linear properties of silicon can be used to investigate the thermal transients in SPS devices with high accuracy."
}
@article{Li2010897,
title = "Accurate operation of a CMOS integrated temperature sensor",
journal = "Microelectronics Journal",
volume = "41",
number = "12",
pages = "897 - 905",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001552",
author = "Jiang Li and Xu Weisheng and Yu Youlin",
keywords = "Dynamic element matching",
keywords = "Substrate bipolar transistor",
keywords = "Temperature sensor",
keywords = "Chopper",
keywords = "Reference voltage",
abstract = "A high-accuracy temperature sensor is designed by applying the temperature characteristics of substrate bipolar transistor in CMOS technology. Initial accuracy of the temperature sensor can be improved by chopper amplifiers and dynamic element matching. Using these two methods, the circuit realization of reference voltage is also described. Simulation results show that the inaccuracy is within×0.4 °C from −40 to +100 °C. Experimental results, obtained from circuits fabricated in 0.5 μm CMOS process, indicate that the sensor is inaccurate within×0.7 °C from −40 to +100 °C. The power dissipation is 0.35 mW and the chip area is 889 μm×620 μm. Compared with previously reported work, the temperature sensor in the paper has lower inaccuracy without calibration."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "IFC - ",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00211-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002119",
key = "tagkey2010IFC"
}
@article{Daniela2010695,
title = "Special issue on the Third IEEE International Workshop on Advances in Sensors and Interfaces 2009 (IWASI 2009)",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "695 - 696",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002090",
author = "Daniela and De Venuto"
}
@article{Farella2010697,
title = "Aware and smart environments: The Casattenta project",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "697 - 702",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000170",
author = "Elisabetta Farella and Mirko Falavigna and Bruno Riccò",
keywords = "Wireless Sensor Networks",
keywords = "Ambient Intelligence",
keywords = "Smart home",
abstract = "“Casattenta” (Aware home, in Italian) is the demonstrator of a research project on “Ambient Intelligence”, “Sensor Fusion” and “Wireless Sensor Networks”. The result is a system composed of fixed and wearable sensor nodes, providing elderly people living alone in their house (but also people in other situations and environments) with adequate and non-intrusive monitoring aimed at improving their safety and quality of life. The system consists of fixed smart sensors distributed in the environment and wearable ones monitoring the inhabitants’ health and activity. The interaction between fixed and mobile nodes, based on the ZigBee compliant technologies, allows indoor tracking and identification of dangerous events."
}
@article{Benocci2010703,
title = "Accelerometer-based fall detection using optimized ZigBee data streaming",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "703 - 710",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001163",
author = "Marco Benocci and Carlo Tacconi and Elisabetta Farella and Luca Benini and Lorenzo Chiari and Laura Vanzago",
keywords = "WBSN",
keywords = "ZigBee",
keywords = "Accelerometer",
keywords = "Fall detection",
abstract = "Wireless body-area sensor networks (WBSNs) are key components of e-health solutions. Wearable wireless sensors can monitor and collect many different physiological parameters accurately, economically and efficiently. In this work we focus on WBSN for fall detection applications, where the real-time nature of I/O data streams is of critical importance. Additionally, this generation of alarms promises to maximize system life. Throughput and energy efficiency of the communication protocol must also be carefully optimized. In this article we investigate ZigBee’s ability to meet WBSN requirements, with higher communication efficiency and lower power consumption than a Bluetooth serial port profile (SPP) based solution. As a case study we implemented an accelerometer-based fall detection algorithm, able to detect eight different fall typologies by means of a single sensor worn on the subjects’ waist. This algorithm has a low computational complexity and can be processed on an embedded platform. Fall simulations were performed by three voluntary subjects. Preliminary results are promising and show excellent values for both sensitivity and specificity. This case study showed how a ZigBee-based network can be used for high throughput WBSN scenarios."
}
@article{Carrara2010711,
title = "Capacitance DNA bio-chips improved by new probe immobilization strategies",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "711 - 717",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000169",
author = "Sandro Carrara and Andrea Cavallini and Yusuf Leblebici and Giovanni De Micheli and Vijayender Bhalla and Francesco Valle and Bruno Samorì and Luca Benini and Bruno Riccò and Inger Vikholm-Lundin and Tony Munter",
keywords = "Biochip",
keywords = "DNA immobilization",
keywords = "Ethylene-glycol",
keywords = "Alkanethiols",
keywords = "Mercapto-hexanol",
keywords = "Lipoate-diethanolamines",
abstract = "Label-free DNA detection plays a crucial role in developing point-of-care biochips. Capacitance detection is a promising technology for label-free detection. However, data published in literature often show evident time drift, large standard deviation, scattered data points, and poor reproducibility. To address these problems, mercapto-hexanol or similar alkanethiols are usually considered as blocking agents. The aim of the present paper is to investigate new blocking agents to further improve DNA probe surfaces. Data from AFM, SPR, florescence microscopy, and capacitance measurements are used to investigate new lipoate and ethylene-glycol molecules. The new surfaces offer further improvements in terms of diminished detection errors. Film structures are investigated at the nano-scale to justify the detection improvements in terms of probe surface quality. This study demonstrates the superiority of lipoate and ethylene-glycol molecules as blocking candidates when immobilizing molecular probes onto spot surfaces in label-free DNA biochip."
}
@article{Alfinito2010718,
title = "A single protein based nanobiosensor for odorant recognition",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "718 - 722",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001278",
author = "E. Alfinito and J.-F. Millithaler and C. Pennetta and L. Reggiani",
keywords = "Nanobiosensors",
keywords = "Impedance network",
keywords = "Olfactory receptors",
abstract = "We propose a nanosensor with a biological active part able to identify specific odorants. The biological part should be constituted by olfactory receptors pertaining to the G protein-coupled receptors, the most efficient natural sensors for odorant discrimination. Modeling, design, and experiments performed for proving the concept are reported and discussed."
}
@article{Cenni2010723,
title = "Design of a SAW-based chemical sensor with its microelectronics front-end interface",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "723 - 732",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001102",
author = "Fabio Cenni and Jeremie Cazalbou and Salvador Mir and Libor Rufer",
keywords = "SAW sensor",
keywords = "Mason's model",
keywords = "PLL",
keywords = "VCRO",
abstract = "A surface acoustic wave (SAW) device is used in this work as the sensing element for a chemical sensor that will be embedded in a wireless sensor node. The SAW device is intended to detect the concentration of gaseous mercury in the environment. The microelectronics front-end architecture has been designed at transistor level in a 0.35 μ m CMOS technology. The SAW device is embedded in a phase-locked loop (PLL) that converts the change of concentration of gaseous mercury into a shift of the loop frequency. Post-layout simulations of the overall sensor including the digital control and read-out blocks have been carried out considering a model of the SAW device described in the Hardware Description Language Verilog-A. Analog tests on the fabricated circuit have demonstrated the functionality of this microelectronics front-end interface."
}
@article{Xu2010733,
title = "A low-power readout circuit for nanowire based hydrogen sensor",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "733 - 739",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000145",
author = "Jiawei Xu and Peter Offermans and Guy Meynants and Hien Duy Tong and Cees J.M. van Rijn and Patrick Merken",
keywords = "Lock-in amplifier",
keywords = "Synchronous demodulation",
keywords = "Complex impedance measurement",
keywords = "Palladium nanowire",
keywords = "Hydrogen sensor",
abstract = "This paper presents a fully integrated lock-in amplifier intended for nanowire gas sensing. The nanowire will change its conductivity according to the concentration of an absorbing gas. To ensure an accurate nanowire impedance measurement, a lock-in technique is implemented to attenuate the low frequency noise and offset by synchronous demodulation or phase-sensitive detection (PSD). The dual-channel lock-in amplifier also provides both resistive and capacitive information of the nanowire in separate channels. Measurement results of test resistors and capacitors show a 2% resolution in the resistance range 10–40 kΩ and a 3% resolution in the capacitance range 0.5–1.8 nF. Moreover, a 28.7–32.1 kΩ impedance variation was measured through the lock-in amplifier for a single palladium nanowire that was exposed to a decreasing hydrogen concentration (10% H2 in N2 to air). The chip has been implemented with UMC 0.18 μm CMOS technology and occupies an area of 2 mm2. The power consumption of the readout circuit is 2 mW from a 1.8 V supply."
}
@article{Belleville2010740,
title = "Energy autonomous sensor systems: Towards a ubiquitous sensor technology",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "740 - 745",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000182",
author = "M. Belleville and H. Fanet and P. Fiorini and P. Nicole and M.J.M. Pelgrom and C. Piguet and R. Hahn and C. Van Hoof and R. Vullers and M. Tartagni and E. Cantatore",
keywords = "Energy autonomous systems",
keywords = "Energy harvesting",
keywords = "Energy scavenging",
keywords = "Power converters",
keywords = "Data converters",
abstract = "Energy efficiency of electronic systems has emerged as one of the most important trends in integrated circuits research in recent years. The results of this continued effort are visible in all kinds of electronic functions: DSPs (reaching the 10 μW/MMAC according Gene's law), data converters (the FOM of recent ADCs is approaching 15 fJ/conversion step [1] (Liu et al., 2010)), power converters (reaching unprecedented efficiencies in ultra-low-power regime) and radios (achieving an energy budget lower than 1 nJ per received-transmitted bit [2,3] (Daly et al., 2010; Mercier et al., 2008)).
Exploiting this continuously improving energy efficiency, the progressing battery technology and advances in energy harvesting, miniaturized electronic sensors that do not need to be recharged for their whole operational life and can communicate among them to build up an energy-autonomous system are possible nowadays.
A working group has been set up by CATRENE11CATRENE stands for “Cluster for Application and Technology Research in Europe on Nanoelectronics”.
to study the state and the development of these “energy autonomous systems”. This paper summarizes the findings of the working group, expanding and updating in this special issue of the Microelectronics Journal on IWASI09 the report written for the proceedings of the workshop [4] (Belleville et al., 2008)."
}
@article{DeVenuto2010746,
title = "0.8 μW 12-bit SAR ADC sensors interface for RFID applications",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "746 - 751",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001217",
author = "Daniela De Venuto and David Tio Castro and Youri Ponomarev and Eduard Stikvoort",
keywords = "Low power SAR ADC",
keywords = "Ultra-low power latched comparator",
keywords = "RFID application",
abstract = "The design and first measuring results of an ultra-low power 12 bit successive-approximation ADC for autonomous multi-sensor systems are presented. The comparator and the DAC are optmised for low power consumption. The power consumption is 0.52 μW from a 1.2 V supply with a sample clock of 3.125 kHz and 0.85 μW at 6.25 kHz. This gives 136 pJ per conversion or 66 fJ per conversion step. As per authors’ knowledge, 66 fJ per conversion step is the best reported so far.
The ADC was realised in the NXP CMOS 0.14 μm technology; the area was 0.35 mm2. Only four metal layers were used in order to allow 3D integration of the sensors."
}
@article{Nascetti2010752,
title = "Detection system based on a novel large area hybrid detector",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "752 - 757",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000923",
author = "A. Nascetti and P. Valerio and D. Caputo and G. de Cesare",
keywords = "Hybrid detectors",
keywords = "Amorphous silicon",
keywords = "Large area photodetectors",
abstract = "A system level implementation of a large area hybrid detector is presented. The detector used in this system consists of an array of hydrogenated amorphous silicon photodiodes directly connected to a CMOS readout chip, which is vertically integrated over the sensor array using flip-chip bonding. In particular, the proposed solution relies on a stack of interconnection layers, deposited on top of the photodiode array, to route each individual pixel output to a separate pre-amplifier channel. This avoids the need for a geometrical matching between the sensor array and the chip contact pads. As a consequence, conventional non-pixelated readout chip can be used and easy-scalable large area detectors can be produced. The CMOS chip is connected to an electronic board, providing the interfaces needed to read the signals as well as providing voltage references and power to the chip. The signals are collected and pre-processed by an FPGA chip, providing a very compact and flexible setup."
}
@article{Harik2010758,
title = "SOI digital pixel sensor based on charge pumping",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "758 - 765",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.016",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000025X",
author = "Louis Harik and Jean-Michel Sallese and Maher Kayal",
keywords = "SOI",
keywords = "Phototransistor",
keywords = "Floating body",
keywords = "Delta-sigma modulation",
abstract = "In this paper, a digital pixel sensor in silicon on insulator (SOI) is presented. The active part is a partially depleted SOI phototransistor. The technique elaborated in Harik et al. (2008) [1] was designed and implemented. Moreover, we took advantage of some of the characteristics of the floating body SOI MOSFET to implement a first order delta sigma modulator in each pixel. Measured data show that the pixel has a sensitivity of 3 mW/m2 and a resolution of about 7 bits. This pixel can be operated in two modes: weak inversion (Idc=1.2 μA) and moderate inversion (Idc=15 μA)."
}
@article{Bergonzini2010766,
title = "Comparison of energy intake prediction algorithms for systems powered by photovoltaic harvesters",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "766 - 777",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000807",
author = "Carlo Bergonzini and Davide Brunelli and Luca Benini",
keywords = "Photovoltaic systems",
keywords = "Prediction algorithms",
keywords = "Energy harvesting",
keywords = "Power management",
keywords = "Wireless sensor network",
abstract = "Small size photovoltaic modules can harvest enough energy to power many personal devices and wireless sensor nodes. The prediction of solar energy intake is possible thanks to the periodical availability of the sunlight and its cyclic behavior. Thus, smart and innovative power management strategies can take advantage from intake prediction algorithms to optimize the energy usage by keeping the system in low power state as long as possible. On the other hand, very accurate predictions need time and energy because of complex calculations, thus an algorithm that can provide the optimal trade-off between computational effort and accuracy is a breakthrough for systems with tight power constraints. In this paper we introduce an innovative, efficient and reliable solar prediction algorithm, the weather conditioned moving average (WCMA). The algorithm has been further enhanced to increase performance using a phase displacement regulator (PDR) which reduces the average error to less than 9.2% at a minimum energy cost. The proposed new algorithm compares favorably with several competing approaches."
}
@article{Battini2010778,
title = "A fast-developing and low-cost characterization and test environment for a double axis resonating micromirror",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "778 - 788",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.007",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000128X",
author = "Francesco Battini and Emilio Volpi and Eleonora Marchetti and Tommaso Cecchini and Francesco Sechi and Luca Fanucci and Ulrich Hofmann",
keywords = "Microelectromechanical systems (MEMS)",
keywords = "MOEMS",
keywords = "Micromirror",
keywords = "Testing",
keywords = "Low-cost characterization",
keywords = "Fast-developing",
abstract = "Testing and characterization of micro-electro-mechanical systems (MEMS) and micro-opto-electro-mechanical systems (MOEMS) can be very challenging due to the multi-domain nature of these devices. Nowadays high volume, high-cost, and accurate measuring systems are necessary to characterize and test MEMS and MOEMS especially to examine their motions, deflections, and resonance frequencies. This paper presents a fast-developing and low-cost environment for MEMS and MOEMS testing and characterization. The environment is based on a flexible mixed-signal platform named Intelligent Sensor InterFace (ISIF). As a case study we consider the characterization of a double axis scanning micromirror. The testing environment has been validated by comparing measurement results with results obtained by the finite element method simulations performed with Comsol Multiphysics. Finally, these results have been exploited to create an electrical equivalent model of the micromirror."
}
@article{Ahmed2010789,
title = "Via wearout detection with on-chip monitors",
journal = "Microelectronics Journal",
volume = "41",
number = "11",
pages = "789 - 800",
year = "2010",
note = "IEEE International Workshop on Advances in Sensors and Interfaces 2009",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000157",
author = "Fahad Ahmed and Linda Milor",
keywords = "Electromigration",
keywords = "Built-in self-test",
keywords = "Reliability monitor",
abstract = "This project aims to detect the onset of chip failure due to via voiding through monitoring the delays of paths in a chip. The proposed method relates the probability of failure of individual vias to an increase in delay for monitors of the system using data for 65 nm technology. The delay increase, as a function of the failure distribution parameters, the path length, gate type, and process variation, has been investigated. An on-chip, ring oscillator-based wearout monitoring circuit is presented. The proposed scheme monitors the delay through a data path using a delay detection circuit (DDC)."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00194-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001941",
key = "tagkey2010IFC"
}
@article{Wu2010601,
title = "Test-access mechanism optimization for core-based three-dimensional SOCs",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "601 - 615",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001175",
author = "Xiaoxia Wu and Yibo Chen and Krishnendu Chakrabarty and Yuan Xie",
keywords = "Three-dimensional integration",
keywords = "Through silicon via",
keywords = "Test access mechanism",
keywords = "Integer linear programming",
keywords = "Randomized rounding",
abstract = "Embedded cores in a core-based system-on-chip (SOC) are not easily accessible via chip I/O pins. Test-access mechanisms (TAMs) and test wrappers (e.g., the IEEE Standard 1500 wrapper) have been proposed for the testing of embedded cores in a core-based SOC in a modular fashion. We show that such a modular testing approach can also be used for emerging three-dimensional integrated circuits based on through-silicon vias (TSVs). Core-based SOCs based on 3D IC technology are being advocated as a means to continue technology scaling and overcome interconnect-related bottlenecks. We present an optimization technique for minimizing the post-bond test time for 3D core-based SOCs under constraints on the number of TSVs, the TAM bitwidth, and thermal limits. The proposed optimization method is based on a combination of integer linear programming, LP-relaxation, and randomized rounding. It considers the Test Bus and TestRail architectures, and incorporates wire-length constraints in test-access optimization. Simulation results are presented for the ITC 02 SOC Test Benchmarks and the test times are compared to that obtained when methods developed earlier for two-dimensional ICs are applied to 3D ICs. The test time dependence on various 3D parameters (e.g. 3D placement, the number of layers, thermal constraints, and the number of TSVs) is also studied."
}
@article{Chatterjee2010616,
title = "Design of second-generation current conveyors employing bacterial foraging optimization",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "616 - 626",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001151",
author = "Amitava Chatterjee and Mourad Fakhfakh and Patrick Siarry",
keywords = "Second-generation current conveyor",
keywords = "Bacterial foraging optimization",
keywords = "CMOS",
keywords = "Parasitic X-port input resistance",
keywords = "High end cut-off frequency of the current signal",
abstract = "The present paper deals with the optimal sizing of CMOS positive second-generation current conveyors (CCII+) employing an optimization algorithm. A contemporary non-gradient stochastic optimization algorithm, called bacterial foraging optimization (BFO) algorithm, has been employed to obtain the optimal physical dimensions of the constituent PMOS and NMOS transistors of the CCII+. The optimization problem has been cast as a bi-objective minimization problem, where we attempt to simultaneously minimize the parasitic X-port input resistance (RX) and maximize the high end cut-off frequency of the current signal (fci). The results have been presented for a large selection of bias currents (I0) and our proposed algorithm could largely outperform a similar algorithm, recently proposed, employing particle swarm optimization (PSO) algorithm and also the differential evolution (DE) algorithm."
}
@article{Lee2010627,
title = "Design and fabrication of 94 GHz MMIC single balanced resistive mixer without IF balun",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "627 - 631",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.012",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000114X",
author = "Sang-Jin Lee and Yong-Hyun Baek and Tae-Jong Baek and Min Han and Seok-Gyu Choi and Dong-Sik Ko and Byoung-Chul Jeon and Jin-Koo Rhee",
keywords = "Single balanced",
keywords = "Resistive mixer",
keywords = "MHEMT",
keywords = "MMIC",
keywords = "High isolation",
abstract = "In this paper, a 94 GHz microwave monolithic integrated circuit (MMIC) single balanced resistive mixer affording high LO-to-RF isolation was designed without an IF balun. The single balanced resistive mixer, which does not require an external IF balun, was designed using a 0.1 μm InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (HEMT). The designed MMIC single balanced resistive mixer was fabricated using the 0.1 μm MHEMT MMIC process. From the measurement, conversion loss of the single balanced resistive mixer was 14.7 dB at an LO power of 10 dBm. The P1 dB (1 dB compression point) values of the input and output were 10 dBm and −5.3 dBm, respectively. The LO-to-RF isolation of the single balanced resistive mixer was −35.2 dB at 94.03 GHz. The single balanced resistive mixer in this work provided high LO-to-RF isolation without an IF balun."
}
@article{Kaçar2010632,
title = "Novel grounded parallel inductance simulators realization using a minimum number of active and passive components",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "632 - 638",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001138",
author = "Fırat Kaçar and Abdullah Yeşil",
keywords = "Inductance simulator",
keywords = "DXCCII",
keywords = "Analog integrated circuits",
abstract = "In this paper novel lossless and lossy grounded parallel inductance simulators are reported. All grounded inductor simulator circuits employing only a single DXCCII and three passive components are proposed. The proposed topologies realized all grounded parallel inductance variations. To demonstrate the performance of the presented DXCCII based parallel inductance simulators, we used one of the circuits to construct a third order high-pass filter, a voltage-mode band-pass filter and LC oscillator. Simulation results are given to confirm the theoretical analysis. The proposed DXCCII and its applications are simulated using CMOS 0.35 μm technology."
}
@article{Kuo2010639,
title = "Low power and high speed multiplier design with row bypassing and parallel architecture",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "639 - 650",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001114",
author = "Ko-Chi Kuo and Chi-Wen Chou",
keywords = "Low power",
keywords = "Bypassing multiplier",
keywords = "Parallel architecture",
keywords = "Ripple carry array",
abstract = "This paper presents a low power and high speed row bypassing multiplier. The primary power reductions are obtained by tuning off MOS components through multiplexers when the operands of multiplier are zero. Analysis of the conventional DSP applications shows that the average of zero input of operand in multiplier is 73.8 percent. Therefore, significant power consumption can be reduced by the proposed bypassing multiplier. The proposed multiplier adopts ripple-carry adder with fewer additional hardware components. In addition, the proposed bypassing architecture can enhance operating speed by the additional parallel architecture to shorten the delay time of the proposed multiplier. Both unsigned and signed operands of multiplier are developed. Post-layout simulations are performed with standard TSMC 0.18 μm CMOS technology and 1.8 V supply voltage by Cadence Spectre simulation tools. Simulation results show that the proposed design can reduce power consumption and operating speed compared to those of counterparts. For a 16×16 multiplier, the proposed design achieves 17 and 36 percent reduction in power consumption and delay, respectively, at the cost of 20 percent increase of chip area in comparison with those of conventional array multipliers. In addition, the proposed design achieves averages of 11 and 38 percent reduction in power consumption and delay with 46 percent less chip area in comparison with those counterparts for both unsigned and signed multipliers. The proposed design is suitable for low power and high speed arithmetic applications."
}
@article{Sedaghat2010651,
title = "Switch-level soft error emulation for SET-induced pulses of variable strengths",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "651 - 661",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001096",
author = "Reza Sedaghat and Reza Javaheri and Prabhleen K. Kalkat and Jalal Mohammad Chikhe",
keywords = "FPGA",
keywords = "Switch-level",
keywords = "Strength-scaling",
keywords = "Drain",
keywords = "Speed-up",
keywords = "Transient equivalence",
abstract = "Due to the increased complexity of modern digital circuits, the use of simulation-based soft error detection methods has become cumbersome and very time-consuming. FPGA-based emulation provides an attractive alternative, as it can not only provide faster speed, but also handle highly complex circuits. In this work, a novel FPGA-based soft error detection technique is proposed, which enables detection of soft errors resulting from voltage pulses of different magnitudes induced by single-event transients (SETs). The paper analyzes the effect of transient injection location on soft error rate (SER) and applies the idea of transient equivalence to minimize resource overhead as well as speed-up emulation process. Switch-level implementations of ISCAS’85 benchmarks are designed using gate-level structures and experimental results are reported. The results show that an application of transient equivalence results in an emulation speed-up of 2.875 and reduces the memory utilization by 65%. An average soft error rate (SER) of 0.7–0.8 was achieved using the proposed strength-based detection with drain as transient injection location, showing that voltage pulses of magnitude smaller than logic threshold can eventually result in soft errors. Furthermore, the presented emulation-based soft error detection technique achieved significant speed-up of the order of 106 compared to a customized simulation-based method."
}
@article{Lee2010662,
title = "A low power CMOS compatible embedded EEPROM for passive RFID tag",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "662 - 668",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001084",
author = "Kyoung-Su Lee and Jung-Hoon Chun and Kee-Won Kwon",
keywords = "Non-volatile memory",
keywords = "RFID tag",
keywords = "Low power",
keywords = "EEPROM",
abstract = "A 512-bit low-voltage CMOS-compatible EEPROM is developed and embedded into a passive RFID tag chip using 0.18 μm CMOS technology. The write voltage is halved by adopting a planar EEPROM cell structure. The wide Vth distribution of as-received memory cells is mitigated by an initial erase and further reduced by an in-situ regulated erase operation using negative feedback. Although over-programmed charges leak from the floating gates over several days, the remaining charges are retained without further loss. The 512-bit planar EEPROM occupies 0.018 mm2 and consumes 14.5 and 370 μW for read and write at 85 °C, respectively."
}
@article{Alioto2010669,
title = "Optimization of the wire grid size for differential routing: Analysis and impact on the power-delay-area tradeoff",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "669 - 679",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001072",
author = "Massimo Alioto and Stéphane Badel and Yusuf Leblebici",
keywords = "Differential routing",
keywords = "VLSI",
keywords = "Optimization",
keywords = "Interconnects",
keywords = "Low power",
abstract = "In this paper, the impact of the wire grid size on the power-delay-area tradeoff of VLSI digital circuits with differential routing is analyzed. To this aim, the differential MOS current-mode logic (MCML) is adopted as reference logic style, and a complete differential design flow is used. Analysis shows that the choice of the grid size in differential routing has a much stronger impact on the power-delay-area tradeoff, compared to the usual single-ended case. Hence, the grid size is an important knob that must be carefully selected when differential routing is adopted. The dependence of power, delay and area on the grid size is discussed in detail through simple models, and introducing appropriate metrics. To validate the analysis and show basic dependencies in practical circuits, 30 benchmark circuits with an in-house designed MCML cell library were synthesized and routed in 0.18 μm CMOS technology. Results show that non-optimal choice of the grid size can determine a dramatic increase in power (1.7×) and area (1.3×). Interestingly, the grid size that optimizes the power-delay-area tradeoff is almost independent of the specific circuit under design; hence a generally optimum grid size exists that optimizes a very wide range of different circuits."
}
@article{AhmedM2010680,
title = "On the generation of CCII and ICCII oscillators from three Op Amps oscillator",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "680 - 687",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001023",
author = "Ahmed M. and Soliman",
keywords = "Two integrator loop oscillators",
keywords = "Op Amp",
keywords = "Current conveyor",
keywords = "Inverting Current conveyor",
keywords = "Adjoint network theorem",
abstract = "A new quadrature oscillator using two current conveyors (CCII) and two inverting current conveyors (ICCII) is generated from a three Op Amp two integrator loop oscillator. The proposed oscillator is generalized and it is found that it is a member of a family of 64 oscillator circuits using combination of CCII and ICCII. Four of the reported oscillators are floating. The three Op Amps oscillator is also found to be the reference oscillator circuit in the generation of two basic CCII two integrator loop grounded passive element oscillators. The nodal admittance matrix (NAM) expansion is used to show the basic steps in the generation of the two alternatives CCII grounded passive element oscillators. Each of the two CCII oscillators is a member of a family of sixteen oscillator circuits using combination of CCII and ICCII. Two of the reported oscillators are floating and their adjoint oscillator circuits are not floating. Simulation results are included."
}
@article{Wang2010688,
title = "Compact modeling of quantum effects in symmetric double-gate MOSFETs",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "688 - 692",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.007",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000100X",
author = "Wei Wang and Huaxin Lu and Jooyoung Song and Shih-Hsien Lo and Yuan Taur",
keywords = "Quantum effects",
keywords = "Compact model",
keywords = "Double gate MOSFET",
abstract = "Quantum effects have been incorporated in the analytic potential model for double-gate MOSFETs. From extensive solutions to the coupled Schrodinger and Poisson equations, threshold voltage shift and inversion layer capacitance are extracted as closed form functions of silicon thickness and inversion charge density. With these modifications, the compact model is shown to reproduce C–V and I–V curves of double-gate MOSFETs consistent with those obtained from those measured from experimental FinFET hardware."
}
@article{He2010693,
title = "Retraction notice to “Normalized mutual integral difference operator: A novel experimental method for extracting threshold voltage of MOSFETs” [Microelectron. J. 33 (2002) 667–670]",
journal = "Microelectronics Journal",
volume = "41",
number = "10",
pages = "693 - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210002016",
author = "Jin He and Zhang Xing and Yangyuan Wang and Xuemei Xi and Mansun Chan and Chenming Hu"
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "IFC - ",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00165-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001655",
key = "tagkey2010IFC"
}
@article{Székely2010539,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "539 - ",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.08.005",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000159X",
author = "Vladimír Székely and Clemens Lasance"
}
@article{Santra2010540,
title = "Ultra-high temperature (>300 °C) suspended thermodiode in SOI CMOS technology",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "540 - 546",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002262",
author = "S. Santra and F. Udrea and P.K. Guha and S.Z. Ali and I. Haneef",
keywords = "SOI",
keywords = "CMOS",
keywords = "Thermodiode",
keywords = "RTDs",
keywords = "High temperature sensors",
keywords = "Smart sensors",
abstract = "This paper reports for the first time on the performance and long-term stability of a silicon on insulator (SOI) thermodiode with tungsten metallization, suspended on a dielectric membrane, at temperatures beyond 300 °C. The thermodiode has been designed and fabricated with minute saturation currents (due to both small size and the use of SOI technology) to allow an ultra-high temperature range and minimal non-linearity. It was found that the thermodiode forward voltage drop versus temperature plot remains linear up to 500 °C, with a non-linearity error of less than 7%. Extensive experimental results on performance of the thermodiode that was fabricated using a Complementary Metal Oxide Semiconductor (CMOS) SOI process are presented. These results are backed up by infrared measurements and a range of 2-D (dimension) and 3-D simulations using ISE and ANSYS software. The on-chip drive electronics for the thermodiode and the micro-heater, as well as the sensor transducing circuit were placed adjacent to the membrane. We demonstrate that the thermodiode is considerably more reliable in long-term direct current operation at high temperatures when compared to the more classical resistive temperature detectors (RTDs) using CMOS metallization layers (tungsten or aluminum). We also compare a membrane thermodiode with a reference thermodiode placed on the silicon substrate and assess their relative performance at elevated temperatures. The experimental results from this comparison confirm that the thermodiode suffers minimal piezo-junction/piezo-resistive effects."
}
@article{Calimera2010547,
title = "Dual- assignment policies in ITD-aware synthesis",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "547 - 553",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002250",
author = "A. Calimera and R.I. Bahar and E. Macii and M. Poncino",
keywords = "Temperature-aware design",
keywords = "Logic synthesis",
keywords = "Multi- V t synthesis",
keywords = "Low-power design",
keywords = "Leakage power",
abstract = "Traditionally, the effects of temperature on delay of CMOS devices have been evaluated using the highest operating temperature as a worst-case corner. This conservative approach was based on the fact that, in older technologies, CMOS devices systematically degraded their performance as temperature increases.
With the progressive scaling of technology, however, there has been a continuous reduction of the gap between supply and threshold voltages of devices, mostly due to low-power constraints. The latter have accelerated this trend by using libraries containing multiple instances of a cell with different ranges of threshold voltages; in particular, the use of high- V t cells to control sub-threshold leakage currents has made this gap smaller and smaller.
The consequence of this trend is the occurrence of the so-called inverted temperature dependence (ITD), under which cells get faster as temperature increases. This new thermal dependence has made the old worst-case design approach obsolete, posing new EDA challenges. Beside complicating timing analysis, in particular, ITD has important and unforeseeable consequences for power-aware design, especially in dual- V t logic synthesis. Due to a contrasting temperature dependence between low- V t cells (which enjoy the classical, direct temperature dependence) and high- V t cells (for which an inverted temperature dependence holds), a single-temperature worst-case design approach fails to generate netlists that are compliant with timing constraints for the entire temperature range.
In this work, we first validate the relevance of ITD on an industrial 65 nm CMOS multi- V t library. Then, we describe an ITD-aware, dual- V t assignment algorithm that guarantees temperature-insensitive operation of the circuits, together with a significant reduction of both leakage and total power consumption. The algorithm has been tested over standard benchmarks using three different replacement policies.
Experimental results show an average leakage power savings of 50% w.r.t. circuits synthesized with a standard, commercial flow that does not take ITD into account and thus, to ensure that no temperature-induced timing faults occur, needs to resort to over-design (i.e., over-constraining the timing bound so as to make sure that temperature fluctuations never make the circuits violating the specified required time for all paths)."
}
@article{Sommet2010554,
title = "Dual approach for bipolar transistor thermal impedance determination",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "554 - 559",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000637",
author = "R. Sommet and A. Xiong and A.A.L. de Souza and R. Quere",
keywords = "Thermal impedance measurement",
keywords = "3D finite element simulation",
keywords = "Model order reduction (MOR)",
keywords = "Heterojunction bipolar transistors (HBT)",
keywords = "Distributed electrothermal model",
abstract = "This paper presents a dual approach for a coherent determination and validation of heterostructure bipolar transistor (HBT) thermal impedance. This study relies both on an experimental characterization method and a 3D finite element simulation approach. One section reminds briefly the experimental approach. Another describes the 3D device modeling used for the physics-based thermal simulation. Thereafter, details on the reduction method used for the numerical computation of the thermal impedance are given. As complement to pure thermal simulation, an electrothermal distributed model is proposed and gives an interpretation of the distributed effects in multi-finger devices."
}
@article{V2010560,
title = "Evaluation of short pulse and short time thermal transient measurements",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "560 - 565",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002274",
author = "V. and Székely",
keywords = "Thermal transient",
keywords = "In-line test",
keywords = "Deconvolution",
abstract = "Thermal transient recording and the time constant spectrum analysis are widely used methods in the thermal testing and qualification of IC packages. A limitation of these methods is that recording of the complete transient response requires long time. This limitation, however, can be overcome by sophisticated procedures. The first method is to apply short power pulse for excitation; the second one is the interruption of the transients long before the thermal equilibrium is reached. The paper offers algorithms to evaluate these short pulse and short time measurements. The presented methods are suitable if the extraction of the little time constants is needed. This is the case if the transient method is used e.g. for die attach quality checking."
}
@article{Pohl2010566,
title = "Fast field solver for the simulation of large-area OLEDs",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "566 - 573",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002286",
author = "László Pohl and Zsolt Kohári and Vladimír Székely",
keywords = "Field simulation",
keywords = "OLED",
keywords = "Electro-thermal",
keywords = "FDM",
keywords = "Matrix multiplication",
abstract = "Lighting purpose organic light-emitting devices need special engineering because of the high electrical and thermal requirements of the operation. Our electro-thermal field simulation software is better to satisfy these special demands than the widely used commercial tools. This article surveys the special simulation needs of lighting purpose OLEDs, presents the electro-thermal extension of the FDM-based SUNRED thermal field simulator and the significant algorithmic changes for speed up the program and make it more flexible. The simulation of an existing OLED closes the paper."
}
@article{Crupi2010574,
title = "Accurate silicon dummy structure model for nonlinear microwave FinFET modeling",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "574 - 578",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000911",
author = "Giovanni Crupi and Dominique M.M.-P. Schreurs and Alina Caddemi",
keywords = "Dummy structures",
keywords = "Equivalent circuit",
keywords = "FinFET",
keywords = "Modeling",
keywords = "On-wafer microwave measurements",
abstract = "The dummy test structures based de-embedding techniques allow one to quickly subtract out part of the parasitic contributions from the microwave transistor measurements without the need of explicit determination of the associated circuit model. But this means that the problem of determining the complex network representing the dummy structures is only by-passed rather than solved. Consequently, this paper is aimed at extracting accurate lumped element models for silicon “open” and “short” structures in order to extend the nonlinear microwave modeling of on-wafer FinFETs at the calibration plane corresponding to the probe tips without need of any shift of the reference plane."
}
@article{Chek2010579,
title = "Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "579 - 584",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001011",
author = "Desmond C.Y. Chek and Michael L.P. Tan and Mohammad Taghi Ahmadi and Razali Ismail and Vijay K. Arora",
keywords = "Carbon nanotube",
keywords = "Analytical device modeling",
keywords = "80 nm CNFET",
keywords = "Low mobility",
keywords = "High mobility",
keywords = "Inverter",
keywords = "SPICE",
abstract = "We present a novel analytical modeling of a zigzag single-walled semiconducting carbon nanotube field effect transistor (CNFET) by incorporating quasi-one-dimensional (Q1D) top-of-a-potential barrier approach. By implementing multimode carrier transport, we explore and compare the performance of a low- (360 cm2/Vs) and high-mobility (7200 cm2/Vs) CNFET model with experimental data from nanotube and 45 nm MOSFET, respectively, as well as existing compact models. Mobility and carrier concentration models are also developed to obtain a good matching with physical data. For a high mobility CNFET, we found that a maximum of 120 μA is obtained. In addition to this, a CNT-based inverter is also developed by constructing n-type and p-type CNFET in ORCAD’s analog behavioral model (ABM). A gain of as high as 5.2 is forecasted for an inverter of 80 nm CNFET."
}
@article{Yuan2010585,
title = "Power analysis and design of wide dynamic range CMOS imaging sensors",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "585 - 593",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001035",
author = "Jie Yuan and Ho Yeung Chan",
keywords = "CMOS image sensor",
keywords = "Wide dynamic range",
keywords = "Power consumption",
keywords = "Self-reset pixel",
keywords = "Multiple sampling",
keywords = "Partial quantization pixel",
abstract = "Wide dynamic range (WDR) CMOS imaging sensors (CIS) are being designed for new portable, implantable and sensory applications, which demand low power consumption. Compared to normal CISs, high quality WDR CISs generally consume much more power. Up to now, the power consumption of a WDR CIS has never been formally studied. This paper focuses to model and analyze the power consumption of two major WDR CIS designs. Analytical equations are derived for the WDR CIS power, and are verified with HSPICE simulations. The analysis indicates that the power consumption of WDR CISs is dominated by the column bus driving power for large imaging array, while photocurrent related power is negligible. Hence, the WDR CIS power is heavily dependent on the load of the column bus and the read-out frequency. A new partial quantization scheme is developed to acquire WDR images with greatly reduced read-out frequencies. Its power consumption is also analytically derived and verified with HSPICE simulations. A 256×256 partial quantization column consumes about 124.0 nW/pixel in the 0.35 μ m CMOS process for 16-bit dynamic range and 30 Hz frame rate. The power analysis is further verified by experimental measurements of a proof-of-concept 32×32 partial quantization imaging sensor in the 0.35 μ m CMOS process."
}
@article{Crepaldi2010594,
title = "A CMOS low-voltage low-power temperature sensor",
journal = "Microelectronics Journal",
volume = "41",
number = "9",
pages = "594 - 600",
year = "2010",
note = "Therminic 2008",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001060",
author = "Paulo Cesar Crepaldi and Tales Cleber Pimenta and Robson Luiz Moreno",
keywords = "Composite transistor",
keywords = "Current mirrors",
keywords = "Temperature sensor",
keywords = "Weak inversion",
keywords = "Low-voltage",
keywords = "Low-power",
abstract = "Temperature sensing circuits are used in a wide range of applications such as in the biomedical area, cold chain monitoring and industrial applications. In the biomedical area, temperature patient monitoring systems can be found in a wide range of hospital applications such as the intensive care unit, surgery rooms and clinical analysis. When the systems also incorporate also communication features, they form a telemedicine system in which the patients can be remotely monitored. The need of portability promotes a demand for sensors and signal conditioners that can be placed directly on the patient or even implanted. Implanted systems provide comfort for the patient during the physiologic data acquisition. These systems should operate preferably without a battery, in which the energy is obtained by inductive coupling (RF link). Implanted devices require low-voltage and low-power operation in a small silicon area in order to offer safety to the patient, mainly in terms of excessive exposure to RF. This work presents a low-voltage low-power temperature sensor, suitable for implanted devices. The circuit topology is based on the composite transistors operating in weak inversion, requiring extremely low current, at low-voltage (0.8 V), with just 100 nW power dissipation. The circuit is very simple and its implementation requires a small silicon area (0.062 mm2). The tests conducted in the prototypes validate the circuit operation."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "IFC - ",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00136-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001369",
key = "tagkey2010IFC"
}
@article{Masmoudiand2010447,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "447 - 448",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001229",
author = "Mohamed Masmoudi and and Michel Renovell"
}
@article{Azzolini2010449,
title = "A CMOS vector lock-in amplifier for sensor applications",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "449 - 457",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002171",
author = "Cristiano Azzolini and Alessandro Magnanini and Matteo Tonelli and Giovanni Chiorboli and Carlo Morandi",
keywords = "Lock-in amplifier",
keywords = "Low-frequency LNA",
keywords = "Mechanical resonator",
keywords = "Low-level measurements",
keywords = "CMOS analog design",
abstract = "The design of an integrated lock-in amplifier is discussed, specifically conceived for the detection of low-level signals at a harmonic of the drive frequency in magnetically excited resonant structures. The circuit includes in-phase and quadrature analogue signal processing channels, whose outputs feed an integrated Σ Δ analogue to digital converter. The circuit can be operated in different configurations, depending on the application requirements: in particular, by combining the digitized outputs of the two channels, vector operation can be obtained. The entire analogue chain, including the Σ Δ modulator, was designed using fully differential elaboration. The circuit was developed in a 0.35 μ m , dual poly-Si, four metal layers analogue CMOS technology with high resistivity poly-Si option. Circuit performance is discussed on the basis of transistor-level simulations and measurement results."
}
@article{Najafi2010458,
title = "A dual mode UHF EPC Gen 2 RFID tag in 0.18 μm CMOS",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "458 - 464",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.11.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002201",
author = "Vali Najafi and Siamak Mohammadi and Vahid Roostaie and Ali Fotowat-Ahmady",
keywords = "RFID",
keywords = "EPC Gen 2",
keywords = "Low power",
keywords = "Dual mode tag",
abstract = "A dual mode UHF RFID transponder in 0.18 μm CMOS conforming to the EPC Gen 2 standard is presented. Low voltage design of the analog and digital blocks enables the chip to operate with a 1 V regulated voltage and thus to reduce the power consumption. The novel dual mode architecture enables the chip to work in passive and battery-assisted modes controlled by the reader. A custom Gen 2 based command switches the operation mode of the circuit. By using a special clock calibration method the chip operates from 1.2 to 5 MHz clock frequency. Several low power techniques are employed to reduce the power consumption of the chip which is essential in passive RFID tags. Measurement results show that the chip consumes 12 μW at 1 V supply voltage when it communicates with the reader. The chip is fabricated in 0.18 μm standard CMOS technology and occupies 0.95 mm2 die area."
}
@article{Trabelsi2010465,
title = "An 863–870 MHz spread-spectrum FSK transceiver design for wireless sensor",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "465 - 473",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002183",
author = "Hatem Trabelsi and Ghazi Bouzid and Faouzi Derbel and Mohamed Masmoudi",
keywords = "Wireless sensor",
keywords = "FHSS",
keywords = "Direct conversion transmit/receive RF front",
keywords = "ACPR",
keywords = "Transmitted power",
keywords = "NF",
keywords = "IIP3",
keywords = "RMS frequency error",
keywords = "BFSK demodulator",
abstract = "Simulation results of a 863–870 MHz frequency-hopped spread-spectrum (FHSS) transceiver with binary frequency shift keying (BFSK) modulation at 20 kb/s for wireless sensor applications is presented.
The transmit/receive RF front end contains a BFSK modulator, an upconversion mixer, a power amplifier (PA), and an 863–870 MHz band pass filter (BPF) at the transmitter side and a low-noise amplifier with down conversion mixer to zero-IF, a low-pass channel-select filter, a limiter and a BFSK demodulator at the receiver side. The various block parameters of the transmit/receive RF front end like noise figure (NF), gain, 1 dB compression point (P-1 dB), and IIP3 are simulated and optimized to meet low power and low cost transceiver specifications.
The transmitter simulations show an output ACPR (adjacent channel power ratio) of −22 dBc, 3.3 dBm P-1 dB of PA, and transmitted power of 0 dBm. The receiver simulations show 51.1 dB conversion gain, −7 dBm IIP3, −15 dB return loss (S11), and 10 dB NF. Low power arctangent-differentiated BFSK demodulator has been chosen and the BER performance has been co simulated with the analog receiver. The complete receiver achieves a BER of 10−3 at 10.5 dB of EbtoNo. The transceiver simulations show an RMS frequency error of 1.45 kHz."
}
@article{Lorival2010474,
title = "Crosstalk pulsewidth calculation",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "474 - 479",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.05.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000895",
author = "Jean-Etienne Lorival and Denis Deschacht",
keywords = "TEM propagation modes linear combinations",
keywords = "Couplings additivity",
keywords = "Equivalent modal lumped model",
keywords = "Maximum amplitude",
keywords = "Noise pulsewidth",
keywords = "Corrective term",
abstract = "Generally, it is better to use closed form expressions instead of simulation tools to predict coupling effects in a circuit and evaluate noise voltages characteristics. A new RLC crosstalk noise expression, based on an RLC transmission line model propagating each propagation mode, has recently been proposed and has been validated in previous works. From this expression, we propose in this paper to calculate the noise characteristics such as the maximum amplitude and the noise pulsewidth. They provide information on the way to modify the circuit structures or interconnect designs to reduce or control crosstalk noise more rapidly than by setting about electrical simulations."
}
@article{Pillement2010480,
title = "Spatio-temporal coding to improve speed and noise tolerance of on-chip interconnect",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "480 - 486",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900216X",
author = "Sébastien Pillement and Olivier Sentieys and Jean-Marc Philippe",
keywords = "Deep-submicron interconnects",
keywords = "Crosstalk",
keywords = "Crosstalk and noise avoidance coding",
keywords = "Low-power design",
abstract = "This paper introduces a new coding scheme that simultaneously tackles different design issues of interconnections such as noise, crosstalk and power consumption. The scheme is based on temporal skewing between data words on even and odd lines of an interconnection link, and its hardware implementation is simple and area-efficient. The proposed scheme permits to double the bandwidth of the interconnect while improving its noise tolerance. This is achieved through the simultaneous use of two error detecting techniques: temporal redundancy and parity. Improved noise tolerance property provided by our design enables to decrease the power supply voltage and hence to reduce power consumption of the interconnect."
}
@article{Voyiatzis2010487,
title = "An efficient architecture for accumulator-based test generation of SIC pairs",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "487 - 493",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000901",
author = "I. Voyiatzis and C. Efstathiou",
keywords = "BIST",
keywords = "Two-pattern testing",
keywords = "Delay fault testing",
keywords = "Stuck-open testing",
keywords = "Ling adders",
abstract = "Research conducted over the years has shown that the application of single input change (SIC) pairs of test patterns for sequential, i.e. stuck-open and delay fault testing is extremely efficient. In this paper, a novel architecture for the generation of SIC pairs is presented. The implementation of the proposed architecture is based on Ling adders that are commonly utilized in current data paths due to their high-operating speed. Since the timing characteristics of the adder are not modified, the presented architecture provides a practical solution for the built-in testing of circuits that contain such adders."
}
@article{Chiou2010494,
title = "Post-linearization with image rejection for high IIP3 and image-rejection ratio of a 17 GHz CMOS low noise amplifier",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "494 - 501",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001199",
author = "Hwann-Kaeo Chiou and Tsung-Yu Yang",
keywords = "Integrated active notch filter",
keywords = "IMD3 compensator",
keywords = "Image-rejection ratio",
keywords = "Post-linearization",
keywords = "Low noise amplifier",
keywords = "CMOS",
abstract = "This study develops a post-linearization technique to simultaneously improve the input third-order intercept point (IIP3) and image-rejection ratio (IRR) of a 17 GHz low noise amplifier (LNA) in a 0.18 μm standard CMOS process. A third-order intermodulation distortion (IMD3) compensator constructed by a second-order notch filter was proposed to achieve both high linearity and image reject (IR) of the cascode LNA. The correlation between the post-linearization and IR techniques is analyzed and discussed. The measured LNA achieved a gain of 16.5 dB, a noise figure (NF) of 4.58 dB, an IIP3 of 0 dBm, and an IRR from 68 to 78 dB. The improvements of IIP3 and IRR are 11.7 and 46 dB, respectively, better than that of the LNA without the notch filter. The proposed IR LNA with total current dissipation of 4.8 mA under 1.8 V supply voltage and notch filter only dissipate a DC power of 2 mW."
}
@article{SánchezLópez2010502,
title = "Generalized admittance matrix models of OTRAs and COAs",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "502 - 505",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001126",
author = "C. Sánchez-López and F.V. Fernández and E. Tlelo-Cuautle",
keywords = "Operational transresistance amplifier",
keywords = "Current operational amplifier",
keywords = "Admittance matrix",
keywords = "Symbolic analysis",
keywords = "Nullor",
abstract = "This paper proposes new admittance matrix models to approach the behavior of fully-differential Operational Transresistance Amplifiers (OTRAs) and Current Operational Amplifiers (COAs). The infinity-variables method is used in order to derive the new generalized models. As a consequence, standard nodal analysis being improved to compute fully-symbolic small-signal characteristics of fully-differential analog circuits."
}
@article{Asadi2010506,
title = "Soft error modeling and remediation techniques in ASIC designs",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "506 - 522",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001047",
author = "Hossein Asadi and Mehdi B. Tahoori",
keywords = "Soft error",
keywords = "ASIC design",
keywords = "Fault injection",
keywords = "Combinational logic",
keywords = "Single event upset",
keywords = "Error propagation",
abstract = "Soft errors due to cosmic radiations are the main reliability threat during lifetime operation of digital systems. Fast and accurate estimation of soft error rate (SER) is essential in obtaining the reliability parameters of a digital system in order to balance reliability, performance, and cost of the system. Previous techniques for SER estimation are mainly based on fault injection and random simulations. In this paper, we present an analytical SER modeling technique for ASIC designs that can significantly reduce SER estimation time while achieving very high accuracy. This technique can be used for both combinational and sequential circuits. We also present an approach to obtain uncertainty bounds on estimated error propagation probability (EPP) values used in our SER modeling framework. Comparison of this method with the Monte-Carlo fault injection and simulation approach confirms the accuracy and speed-up of the presented technique for both the computed EPP values and uncertainty bounds.
Based on our SER estimation framework, we also present efficient soft error hardening techniques based on selective gate resizing to maximize soft error suppression for the entire logic-level design while minimizing area and delay penalties. Experimental results confirm that these techniques are able to significantly reduce soft error rate with modest area and delay overhead."
}
@article{Mandal2010523,
title = "PowerAntz: Ant behavior inspired power budget distribution scheme for Network-on-Chip systems",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "523 - 531",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.005",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000090X",
author = "Suman Kalyan Mandal and Rabi Mahapatra",
keywords = "Network-on-Chip",
keywords = "Power management",
keywords = "Ant system",
keywords = "PowerAntz",
keywords = "System-on-Chip",
abstract = "In Network-on-Chip (NoC) based complex system design on-chip power management is a challenging issue. Most power management schemes fail to provide optimal power sharing among on-chip routers when the power budget distribution varies significantly due to their non-uniform placement on chip. This paper presents PowerAntz, an ant system inspired distributed power management strategy for NoC based systems. This is an adaptive and distributed approach to power sharing across routers of a large network on chip and it is shown to be a scalable solution. A detailed flit accurate simulator was developed in SystemC to evaluate the efficiency of the technique. The experiments demonstrate PowerAntz to be up to 30% more effective in distributing power budget compared to existing strategies. Further, it also achieves up to 21.25% improvement in power budget utilization while keeping the energy overhead negligible for best case scenarios."
}
@article{Rieger2010532,
title = "Integrated linear giga-ohm resistance using current scaling",
journal = "Microelectronics Journal",
volume = "41",
number = "8",
pages = "532 - 537",
year = "2010",
note = "Design and Technology of Integrated Systems in the Nanoscale Era",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.07.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210001266",
author = "Robert Rieger and Shinyu Chen",
keywords = "Integrated CMOS circuit",
keywords = "Analogue circuit design",
keywords = "Active resistor",
keywords = "Low-frequency filter",
keywords = "Weak-inversion circuit",
abstract = "Integrated grounded resistors of very large value are essential circuit elements for the design of compact filters with very low cut-off frequencies. A typical application of such filters is the rejection of DC voltages in amplifier circuits especially in physiological recording systems exhibiting electrode offset and low-frequency drift. In this letter, the implementation of a giga-ohm resistance is presented using a conventional fixed-gain OTA and a cascade of weak-inversion current scalers. The circuit yields a short design time, small power and area consumption as well as high linearity. A test circuit having an area of 0.011 mm2 integrated in 0.35 μm CMOS is presented which yields a 41 Hz cut-off frequency, 1 V input range and less than −52 dB THD when connected to an integrated 1 pF capacitor, making it a suitable solution for the rejection of mains interference and offset in wearable biomedical applications."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00094-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000947",
key = "tagkey2010IFC"
}
@article{Hayati2010381,
title = "Modeling and simulation of combinational CMOS logic circuits by ANFIS",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "381 - 387",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000728",
author = "Mohsen Hayati and Abbas Rezaei and Majid Seifi and Ali Naderi",
keywords = "ANFIS",
keywords = "Takagi–sugeno model",
keywords = "CMOS logic gates",
keywords = "Combinational circuits",
keywords = "HSPICE",
abstract = "In this paper, application of adaptive neuro-fuzzy inference system (ANFIS) in modeling of CMOS logic gates as a tool in designing and simulation of CMOS logic circuits is presented. Structures of the ANFIS are developed and trained in MATLAB 7.0.4 program. We have used real hardware data for training the ANFIS network. A hybrid learning algorithm consists of back-propagation and least-squares estimation is used for training. Influence of the structure of the proposed ANFIS model on accuracy and network performance has been analyzed through some combinational circuits. For the comparison of the ANFIS simulation results, we have simulated the circuits in HSPICE environment with 0.35 μm process nominal parameters. The comparison between ANFIS, HSPICE, and real hardware shows the feasibility and accuracy of the proposed ANFIS modeling procedure. The results show the proposed ANFIS simulation has much higher speed and accuracy in comparison with HSPICE simulation and it can be simply used in software tools for designing and simulation of complex CMOS logic circuits."
}
@article{Ferreira2010388,
title = "Current mode read-out circuit for InGaAs photodiode applications",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "388 - 394",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000073X",
author = "Pietro M. Ferreira and José Gabriel R.C. Gomes and Antonio Petraglia",
keywords = "Analog integrated circuits",
keywords = "CMOS",
keywords = "Current mode",
keywords = "Infrared image sensor",
keywords = "Read-out circuit",
abstract = "Infrared focal plane arrays have many military, industrial, medical, and scientific applications that require high-resolution and high-performance read-out electronics. In applications involving InGaAs sensor arrays, data read-out can be carried out by circuits implemented with 0.35 μ m CMOS technology. In this paper we propose a dynamically regulated cascode current mirror for pixel read-out. From simulation results, we expect this circuit to achieve a better trade-off between silicon area, signal-to-noise ratio, and output dynamic range than the trade-off that is currently achieved by current mode CMOS read-out circuits."
}
@article{AliUsmani2010395,
title = "Carbon nanotube field effect transistors for high performance analog applications: An optimum design approach",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "395 - 402",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000741",
author = "Fahad Ali Usmani and Mohammad Hasan",
keywords = "Single walled CNT",
keywords = "Chirality",
keywords = "Carbon nanotube field effect transistor (CNFET)",
keywords = "CMOS",
keywords = "Analog",
abstract = "There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore’s law beyond 22 nm technology node. Carbon nanotube based transistor (CNFET) has significant potential to replace CMOS in the future due to its better electrostatics and higher mobility. This paper presents a complete optimal design of an inverting amplifier in CMOS, CNFET and hybrid technologies. We investigate and conceptually explain the performance measure of the amplifier at 32 nm technology node in terms of operating voltage, number of carbon nanotubes (CNT), diameter and pitch (inter-nanotube distance) variations of carbon nanotubes in a CNFET transistor in pure and hybrid technologies for area, power and performance optimization. This paper also explores the scope, possibilities and challenges associated with pure CNFET and hybrid amplifiers. We have found that pure CNFET amplifier provided good amplification while hybrid pCNFET–nMOS amplifier offered excellent frequency response and pMOS–nCNFET amplifier gave better transient performance compared with planar CMOS."
}
@article{Yang2010403,
title = "Variable-amplitude dither-based digital background calibration algorithm for linear and high-order nonlinear error in pipelined ADCs",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "403 - 410",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000753",
author = "Shuo Yang and Jun Cheng and Pei Wang",
keywords = "Pipelined ADC",
keywords = "Digital background calibration",
keywords = "Variable-amplitude",
keywords = "Dither-based",
keywords = "Correlation-based",
abstract = "Dither-based digital background calibration algorithm has been used to eliminate the influence of linear and nonlinear errors in pipelined ADC. However, this algorithm suffers from two disadvantages: too slow convergent speed and deduction of transmitting signal’s amplitude in analog circuits due to dither injection. Input-dependent variable-amplitude dither-based algorithm is used in this paper to conquer both disadvantages. This proposed algorithm is implemented in a 14-bit, 100 MHz sample-rate pipelined ADC. The simulation results illustrate signal-to-noise and distortion (SINAD) of 76.56 dB after calibration of linear and nonlinear errors. Furthermore, the convergent speed is improved much more."
}
@article{Bo2010411,
title = "A wide-range all digital DLL for multiphase clock generation",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "411 - 416",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000765",
author = "Bo and Ye",
keywords = "Delay-locked loop (DLL)",
keywords = "Phase compensation circuit (PCC)",
keywords = "Multiphase clock generation",
abstract = "This paper presents a wide-range all digital delay-locked loop (DLL) for multiphase clock generation. Using the phase compensation circuit (PCC), the large phase difference is compensated in the initial step. Thus, the proposed solution can overcome the false-lock problem in conventional designs, and keeps the same benefits of conventional DLLs such as good jitter performance and multiphase clock generation. Furthermore, the proposed all digital multiphase clock generator has wide ranges and is not related to specific process. Thus, it can reduce the design time and design complexity in many different applications. The DLL is implemented in a 0.13 μm CMOS process. The experimental results show that the proposal has a wide frequency range. The peak-to-peak jitter is less than 7.7 ps over the operating frequency range of 200 MHz–1 GHz and the power consumption is 4.8 mW at 1 GHz. The maximum lock time is 20 clock cycles."
}
@article{NourmandiPour2010417,
title = "An IEEE 1149.1-based BIST method for at-speed testing of inter-switch links in network on chip",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "417 - 429",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000777",
author = "Reza Nourmandi-Pour and Ahmad Khadem-Zadeh and Amir Masoud Rahmani",
keywords = "BIST",
keywords = "IEEE 1149.1",
keywords = "Interconnects",
keywords = "Crosstalk",
keywords = "NOC",
keywords = "Link",
abstract = "With advance in technology and working frequency reaching gigahertz, designing and testing interconnects have become an important issue. In this paper, we proposed a BIST-based boundary scan architecture to at-speed test of crosstalk faults for inter-switch communication links in network on chip. This architecture includes enhanced cells intended for MVT model test patterns generation and analysis test responses. One new instruction is used to control cells and TPG controller in the at-speed test mode in order to fully comply with conventional IEEE 1149.1 standard."
}
@article{Li2010430,
title = "Designing a compact soft-start scheme for voltage-mode DC–DC switching converters",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "430 - 439",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000789",
author = "Sizhen Li and Xuecheng Zou and Xiaofei Chen and Quan Gan",
keywords = "DC–DC switching converter",
keywords = "Soft-start scheme",
keywords = "Inrush current",
keywords = "Digital-controlled current limitation",
keywords = "DAC",
abstract = "In this paper, a compact soft-start scheme is proposed and successfully applied to typical voltage-mode DC–DC switching converters. The adaptive current limitation implemented through DAC control will largely reduce the overshoot voltage under a wide range of output current. Proven experimentally by a buck converter implemented in a 0.5 μm CMOS technology, the post-simulation results show that when the converter starts up, the maximum overshoot (2.7% at ILOAD=0 A) by the proposed soft-start scheme is less than that with the conventional scheme by 5% under the same condition. The start-up time can be adaptively adjustable depending on load current and the maximum start-up time is around 760 μs with 22 μF output capacitor. The circuits which realize the soft-start scheme can also be fully integrated into the control chip of DC–DC switching converter resulting in low cost."
}
@article{Pugliese2010440,
title = "Analysis of op-amp phase margin impact on SC ΣΔ modulator performance",
journal = "Microelectronics Journal",
volume = "41",
number = "7",
pages = "440 - 446",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000790",
author = "Andrea Pugliese and Francesco A. Amoroso and Gregorio Cappuccino and Giuseppe Cocorullo",
keywords = "Sigma-delta modulator",
keywords = "Switched-capacitor (SC) integrator",
keywords = "Behavioural modelling",
keywords = "Operational amplifier (op-amp)",
keywords = "Transient response",
keywords = "Settling time",
abstract = "The impact of operational amplifier (op-amp) phase margin on switched-capacitor (SC) sigma-delta modulator (ΣΔΜ) performance is investigated in this paper. An ad-hoc integrator settling model is developed and verified by circuit simulations performed in a commercial 0.35 μm CMOS technology. The model allows the effect of op-amp phase margin to be taken into account in ΣΔΜ behavioural analysis. Behavioural simulations of a typical single-bit second-order modulator are presented, as an example. As shown, the proposed analysis allows well-found specifications for the op-amp unity-gain frequency, slew rate and phase margin to be defined since the preliminary behavioural simulation phase."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00082-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000820",
key = "tagkey2010IFC"
}
@article{Wu2010325,
title = "Design and implementation of a bistable microcantilever actuator for magnetostatic latching relay",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "325 - 330",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000455",
author = "Yibo Wu and Guifu Ding and Congchun Zhang and Juang Wang and Shengping Mao and Hong Wang",
keywords = "Microcantilever actuator",
keywords = "Bistable mechanism",
keywords = "Magnetostatic laching",
keywords = "Relay",
keywords = "MEMS",
abstract = "This paper presents the design, fabrication, and implementation of a microcantilever actuator with magnetostatic latching for performing low power bistable relay applications. This unique bistable feature consists of a low-stiffness torsion/cantilever beam system with circular-shaped support and a permanent magnet for holding the closed state with a permalloy soft magnetic circuit. The special circular support is designed to enhance the stiffness of the overhang beams. First, mechanical modeling of the leveraged torsion/cantilever beams was performed by Castigliano’s theorem so as to deduce the spring stiffness of system. Then the device has been prepared by a laminated photoresist sacrificial layer process (LPSLP). Finally, mechanical performance was characterized by atomic force microscopy (AFM), combined with finite element simulation using ANSYS™ package and analysis model as well. Switching between two stable states of the microactuator was successfully validated with WYKO NT1100 optical profiling system."
}
@article{Yang2010331,
title = "A dynamic collision model for improved over-range protection of cantilever-mass micromechanical accelerometers",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "331 - 337",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000571",
author = "Yongliang Yang and Wei Jiang and Kun Zhang and Min Liu and Xinxin Li",
keywords = "Accelerometer",
keywords = "Micromachining",
keywords = "Over-range protection",
keywords = "Beam–mass",
keywords = "Piezoresistance",
abstract = "A dynamic collision model is proposed and built to analyze over-range protection of cantilever beam–mass structured micro-accelerometers. The model encloses angular momentum of the seismic mass, squeeze-film air damping, inertial force and supporting force (acting at the cantilever-root) during the collision between the seismic mass and the over-range stopping bumpers. Based on angular momentum balance equation we obtain the relationship among the supporting force F, the collision time duration t and the rotation center c where the bumpers are located. In the best case of F=0 which means no supporting force acts on the cantilever, we find the optimal bumper location of c. The accelerometers have been fabricated with the over-range protection design according to the dynamic collision model. Experimental test shows that 5g measure-range accelerometers can endure 9000g acceleration and there is no sign of performance degradation, which well verified the dynamic collision model."
}
@article{Hwang2010338,
title = "Development and fabrication of an LTCC multilayer coil inducer in a vibration-based electromagnetic meso-generator",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "338 - 346",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000583",
author = "Y.M. Hwang and W.L. Lu and C.T. Pan",
keywords = "LTCC",
keywords = "Vibration-based",
keywords = "Electromagnetic",
keywords = "Multilayer",
keywords = "Meso-generator",
abstract = "This paper presents a new development in the fabrication of vibration-based electromagnetic meso-generators, using a low temperature co-fired ceramic (LTCC) technique. The LTCC process produces multilayer structures consisting of an embedded silver micro-coil in a helical ceramic micro-spring, fabricating an inducer in only a few steps. The design of our device consists of an LTCC inducer, a neodymium–iron–boron permanent magnet and two plastic spacers. The micro-coil and the micro-spring are patterned using a screen-printing technique and a carbon-dioxide laser drilling method, respectively. The silver material and multilayer structure are chosen in order to enhance both current output and power output. A 6-layer coil structure is fabricated, with a cross-sectional area of 900 μm2 for each layer. After assembly, the volume of the generator is approximately 718 mm3. When operated at 69 Hz vibration frequency and vibration amplitude of 0.03 mm, the generator yields a maximum voltage output of 44.5 mV, a maximum current output of 83.1 mA and a power output level of 1.56 mW. Results demonstrate that the LTCC meso-generator is a suitable choice to use for the enhancement of electricity."
}
@article{KarthigaiKumar2010347,
title = "An ASIC implementation of low power and high throughput blowfish crypto algorithm",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "347 - 355",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000595",
author = "P. Karthigai Kumar and K. Baskaran",
keywords = "ASIC",
keywords = "Blowfish",
keywords = "Cryptography",
keywords = "Encryption",
keywords = "Low power",
keywords = "Throughput",
abstract = "Information security has always been important in all aspects of life. It can be all the more important as technology continues to control various operations in our day to day life. Cryptography provides a layer of security in cases, where the medium of transmission is susceptible to interception, by translating a message into a form that cannot be read by an unauthorized third party. Several software implementations of blowfish crypto algorithms are described in the literature, but few attempts have been made to describe hardware implementations. The ultimate objective of the research presented in this paper is to develop low-power, high-throughput, real-time, reliable and secure crypto algorithm, which can be achieved through hardware implementations. The blowfish crypto algorithm is prototyped in 130 nm custom integrated circuit."
}
@article{Wang2010356,
title = "Electromagnetic energy harvesting from flow induced vibration",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "356 - 364",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000601",
author = "D.-A. Wang and K.-H. Chang",
keywords = "Electromagnetic",
keywords = "Energy harvester",
keywords = "Flow induced vibration",
abstract = "A new electromagnetic energy harvester for harnessing energy from flow induced vibration is developed. It converts flow energy into electrical energy by fluid flow and electromagnetic induction. A finite element model for estimation of the generated voltage of the energy harvester is developed. A prototype of the energy harvester is fabricated and tested. Experimental results show that an output voltage of 10.2 mVpp is generated when the excitation pressure oscillates with an amplitude of 254 Pa and a frequency of about 30 Hz. The values of the generated voltage based on the finite element computations agree well with the experiments. By detecting the voltage drop across a matched load, the instantaneous power is determined as 0.4 μW under an excitation frequency of 30 Hz and a pressure amplitude of 254 Pa in the pressure chamber."
}
@article{Xie2010365,
title = "FPGA realization of FIR filters for high-speed and medium-speed by using modified distributed arithmetic architectures",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "365 - 370",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000613",
author = "Jiafeng Xie and Jianjun He and Guanzheng Tan",
keywords = "Distributed arithmetic",
keywords = "Field programmable gate arrays (FPGA)",
keywords = "Finite impulse response (FIR) filter",
keywords = "Modified solution.",
abstract = "This paper presents the design optimization of fully pipelined architectures for area-time-power-efficient implementation of finite impulse response (FIR) filter. The architectures are designed to obtain a suitable area-time tradeoff. Analysis of the performance of different filter orders and different address lengths of partial tables indicate the choice of four input partial tables presents the best of area-time-power-efficient realizations of FIR filter compared with the existing LUT-less DA-based implementations of FIR filters in both high-speed and medium-speed. Moreover, a number of further experiments not only shows the pipeline register’s significant influence to the maximum frequency of the FIR filters but also indicates it also has area usage. Final experiment shows that with the help of using pipeline register, the choice of 4-bits-per-clock (4BPC) of the architecture for word-length N=8 with four input partial table yields the best cost-effective when comparing with other different cases in both high-speed and medium-speed implementations."
}
@article{Xia2010371,
title = "High speed interconnect data dependent jitter analysis",
journal = "Microelectronics Journal",
volume = "41",
number = "6",
pages = "371 - 379",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000625",
author = "Tian Xia and Di Mu",
keywords = "Data dependent jitter",
keywords = "Inteconnect",
keywords = "Fourier analysis",
abstract = "This paper focuses on modeling and characterizing the data dependent jitter (DDJ) in high-speed interconnect. The analysis process is performed based on the Fourier series using the interconnect RLC model. By calculating the pattern dependent delay deviations, the DDJ is characterized. To validate the model accuracy, the analysis results have been compared against Cadence simulations. The interconnect layout optimization is also explored to minimize the DDJ."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00065-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000650",
key = "tagkey2010IFC"
}
@article{Kundu2010257,
title = "Analysis and optimization of two movable plates RF MEMS switch for simultaneous improvement in actuation voltage and switching time",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "257 - 265",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000406",
author = "A. Kundu and S. Sethi and N.C. Mondal and B. Gupta and S.K. Lahiri and H. Saha",
keywords = "Switching speed",
keywords = "Actuation voltage",
keywords = "RF MEMS switch",
keywords = "Two movable plates",
keywords = "Equivalent model",
abstract = "An attempt to overcome the existing limitations of RF MEMS switch like high actuation voltage and low switching time simultaneously has been addressed by introducing the concept of moving bottom plate (CPW central line).The performance characteristics of such MEMS switch with two movable plates has been analyzed by setting up the continuity equation of both the plates and solving it analytically with valid approximations. It is seen that for all practical cases such two movable plate designs can be represented by a single movable plate with equivalent membrane parameters. It is observed that a simultaneous reduction of both the actuation voltage and switching time around 20% is possible by optimizing the dimensions. Alternatively a maximum reduction of 30% in the actuation voltage is possible keeping the switching time unaltered and the switching time can be reduced by 50% keeping the switching voltage unaltered. Closed form expressions for the actuation voltage and switching time are obtained which are seen to match with the numerical results."
}
@article{E2010266,
title = "Synthesis of class-AB log-domain filters based on nonlinear transconductance",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "266 - 276",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000418",
author = "E. and Farshidi",
keywords = "Filter",
keywords = "Log-domain",
keywords = "Current-mode",
keywords = "Current splitter",
keywords = "Transconductance",
keywords = "Class-AB",
abstract = "In this paper a new generalized method for synthesis of class-AB current-mode log-domain filters, using nonlinear transconductance cell, is presented. The proposed nonlinear transconductance cell is designed by employing floating-gate MOS (FG-MOS) transistors that operate in weak inversion. It allows deriving current-mode nonlinear transconductance-capacitor (Gm-C) structure from its corresponding conventional transconductance-capacitor (gm-C) in a systematic way. In this method, synthesis complexity is independent of system size, and thus high-order systems can be readily realized. In addition, it keeps the transconductance-capacitor topology invariant, leading to a very regular, general and simple topology. The filters are designed based on the transistors that are working in weak inversion and feature, low supply voltage, low-power consumption, immune to body effect and with low circuit complexity. For illustration of this new synthesis method, two different filters were designed and verified by simulation. The simulation results by HSPICE show the validity of the proposed technique."
}
@article{Morgado2010277,
title = "A 0.13 μm CMOS adaptive sigma–delta modulator for triple-mode GSM/Bluetooth/UMTS applications",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "277 - 290",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000431",
author = "Alonso Morgado and Rocío del Río and José M. de la Rosa and Rafael Castro-López and Belén Pérez-Verdú",
keywords = "Analog–digital conversion",
keywords = "Sigma–delta modulation",
keywords = "Mixed analog–digital integrated circuits",
keywords = "Multi-standard wireless applications.",
abstract = "This paper describes the design and experimental characterization of a 0.13 μm CMOS switched-capacitor reconfigurable cascade ΣΔ modulator intended for multi-standard GSM/Bluetooth/UMTS hand-held devices. Both architectural- and circuital-level reconfiguration strategies are incorporated in the chip in order to adapt the effective resolution and the output rate to different standard specifications with optimized power dissipation. This is achieved by properly combining different reconfiguration modes that include the variation in the order of the loop filter (3rd- or 4th-order), the clock frequency (40 or 80 MHz), the internal quantization (1 or 2 bits), and the bias currents of the amplifiers. The selection of the modulator topology and the design of its building blocks are based on a top-down CAD methodology that combines simulation and statistical optimization at different levels of the modulator hierarchy. Experimental measurements show a correct operation of the prototype for the three standards, featuring dynamic ranges of 83.8/75.9/58.7 dB and peak signal-to-(noise+distortion) ratios of 78.7/71.3/53.7 dB at 400 ksps/2/8 Msps, respectively. The modulator power consumption is 23.9/24.5/44.5 mW, of which 9.7/10/24.8 mW are dissipated in the analog circuitry. The multi-mode ΣΔ prototype shows an overall performance that is competitive with the current state of the art.11This work has been supported by the Spanish Ministry of Science and Education (with support from the European Regional Development Fund) under contract TEC2007-67247-C02-01/MIC and the Andalusian (Regional) Council of Innovation, Science and Enterprise under contract TIC-2532."
}
@article{Petrellis2010291,
title = "An ultra low area asynchronous combo 4/8/12-bit/quaternary A/D converter based on integer division",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "291 - 307",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000443",
author = "Nikos Petrellis and Michael Birbas and John Kikidis and Alexios Birbas",
keywords = "Analogue digital conversion",
keywords = "Multivalued signals",
keywords = "Integer division",
keywords = "Calibration",
keywords = "Sample-hold",
keywords = "Voltage to current conversion",
abstract = "An asynchronous A/D Converter architecture based on a binary tree structure is presented in this paper. Two alternative design strategies are presented that lead either to a high mismatch immunity ADC that requires a light calibration logic (area: 0.123 mm2, power: 72 mW) or a faster, tinier and even lower power ADC (area: 0.21 mm2, power: 25 mW) with lower mismatch immunity that needs a slightly more complicated calibration logic. Both alternative ADC design strategies require at least one or two orders of magnitude lower area than any known approach and a remarkable low power consumption without sacrificing speed. The designed A/D Converter can operate with a configurable resolution of either 4, 8, or 12-bits. Moreover, 6 quaternary digits or three 16-level outputs are also available from the intermediate nodes of the binary tree, for applications that require multi-valued communication lines. Simulation results prove that the peak conversion rate of the high mismatch immunity A/D design alternative exceeds 300, 230 and 225 MS/s for 4, 8 and 12-bit resolution, respectively, while the peak conversion rate of the faster design alternative is higher than 500, 440 and 420 MS/s for 4, 8 and 12-bit resolution, respectively. An appropriate sample/hold and voltage to current conversion architecture has been developed along with an intelligent output latching technique that improve the achieved signal to noise and distortion ratio by up to 7 dB. Moreover, an appropriate calibration method that extends the temperature operating range and compensates for the component mismatches is presented. The ultra low area and power consumption of the developed ADC architecture favours its employment in sensor networks while these features make its use attractive as a building block in time interleaved parallel ADCs for the achievement of ultra high speed conversion."
}
@article{tagkey2010308,
title = "Comment on “Efficient approaches for designing reversible Binary Coded Decimal adders”",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "308 - 310",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000467",
key = "tagkey2010308"
}
@article{Yuce2010311,
title = "New CCII-based versatile structure for realizing PID controller and instrumentation amplifier",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "311 - 316",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000479",
author = "Erkan Yuce and Shahram Minaei",
keywords = "Current-mode",
keywords = "Second-generation current conveyor",
keywords = "CCII",
keywords = "PID controller",
keywords = "Instrumentation amplifier",
abstract = "In this paper, a novel two-input two-output current-mode (CM) circuit for providing proportional-integral-derivative (PID) controller and instrumentation amplifier (IA) responses, depending on the passive component selection, is presented. The developed circuit uses only grounded capacitors (PID controller selection) and only grounded resistors (IA choice); accordingly, it is convenient for integrated circuit (IC) fabrication. The proposed new configuration can simultaneously realize both gain variable non-inverting and inverting responses without requiring extra additional components. The proposed topology for providing high output impedance currents can be easily cascaded with other CM structures. Finally, some time domain and frequency domain analysis with SPICE simulation program and experimental results are included to show workability and effectiveness of the proposed circuit."
}
@article{Roy2010317,
title = "Bounded delay timing analysis and power estimation using SAT",
journal = "Microelectronics Journal",
volume = "41",
number = "5",
pages = "317 - 324",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.04.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000056X",
author = "Suchismita Roy and P.P. Chakrabarti and Pallab Dasgupta",
keywords = "Bounded delay",
keywords = "Event modeling",
keywords = "Timing analysis",
keywords = "Transition power",
keywords = "SAT",
abstract = "This paper presents a satisfiability based approach that can be used for accurate estimation of both the critical delay and dynamic transition power consumption of circuits using an event propagation model. The accuracy of the model depends on the accuracy of the gate delays. The speed and efficiency of modern Boolean SAT solvers permits us to model complicated delay models like the Bounded Delay Model, which is better able to capture realistic variations in gate delays due to process variations and changes in operating conditions. We show that timing analysis with bounded delays yields a more accurate critical delay for a circuit than with fixed gate delays. In spite of the high complexity due to unpredictable gate delays, our SAT based approach gives good performance on benchmark circuits, even with a Bounded Delay Model derived from a real industrial library."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00049-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000492",
key = "tagkey2010IFC"
}
@article{Saeedi2010185,
title = "A library-based synthesis methodology for reversible logic",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "185 - 194",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000273",
author = "Mehdi Saeedi and Mehdi Sedighi and Morteza Saheb Zamani",
keywords = "Reversible logic",
keywords = "Synthesis",
keywords = "Binding",
keywords = "Optimization",
abstract = "Synthesis of reversible logic has received significant attention in the recent years and many synthesis approaches for reversible circuits have been proposed so far. In this paper, a library-based synthesis methodology for reversible circuits is proposed where a reversible specification is considered as a permutation comprising a set of cycles. To this end, a pre-synthesis optimization step is introduced to construct a reversible specification from an irreversible function. In addition, a cycle-based representation model is presented to be used as an intermediate format in the proposed synthesis methodology. The selected intermediate format serves as a focal point for all potential representation models.
In order to synthesize a given function, a library containing seven building blocks is used where each building block is a cycle of length less than 6. To synthesize large cycles, we also propose a decomposition algorithm which produces all possible minimal and inequivalent factorizations for a given cycle of length greater than 5. All decompositions contain the maximum number of disjoint cycles. The generated decompositions are used in conjunction with a novel cycle assignment algorithm which is proposed based on the graph matching problem to select the best possible cycle pairs. Then, each pair is synthesized by using the available components of the library. The decomposition algorithm together with the cycle assignment method are considered as a binding method which selects a building block from the library for each cycle. Finally, a post-synthesis optimization step is introduced to optimize the synthesis results in terms of different costs.
To analyze the proposed methodology, various experiments are performed. Our analyses on the available reversible benchmark functions reveal that the proposed library-based synthesis methodology can produce low-cost circuits in some cases compared with the current approaches. The proposed methodology always converges and it typically synthesizes a give function fast. No garbage line is used for even permutations."
}
@article{Vaddi2010195,
title = "Robustness comparison of DG FinFETs with symmetric, asymmetric, tied and independent gate options with circuit co-design for ultra low power subthreshold logic",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "195 - 211",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000285",
author = "Ramesh Vaddi and S. Dasgupta and R.P. Agarwal",
keywords = "Circuit topologies",
keywords = "Device/circuit co-design",
keywords = "DG FinFETs",
keywords = "Symmetric DGMOSFET",
keywords = "Asymmetric DGMOSFET",
keywords = "Tied gate DGMOSFET",
keywords = "Independent gate DGMOSFET",
keywords = "Subthreshold logic",
keywords = "Ultra low power",
abstract = "Double gate FinFETs are shown to be better candidates for subthreshold logic design than equivalent bulk devices. However it is not so clear which configuration of DG FinFETs will be more optimal for subthreshold logic. In this paper, we compare the different device and circuit level performance metrics of DG FinFETs with symmetric, asymmetric, tied and independent gate options for subthreshold logic. We observe that energy delay product (EDP) shows a better subthreshold performance metric than power delay product (PDP) and it is observed that the tied gate symmetric option has ≈78% lower EDP value than that of independent gate option for subthreshold logic. The asymmetry in back gate oxide thickness adds to further reduction in EDP for tied gate and has no significant effect on independent gate option. The robustness (measured in terms of % variation in device/circuit performance metrics for a ±10% variation in design parameters) of DG FinFETs with various options has also been investigated in presence of different design parameter variations such as silicon body thickness, channel length, threshold voltage, supply voltage and temperature, etc. Independent gate option has been seen to be more robust (≈40% less) than that of tied gate option for subthreshold logic. Comparison of logic families for subthreshold regime with DG FinFET options shows that for tied gate option, sub-CMOS, sub-Domino and sub-DCVSL have almost similar and better energy consumption and robustness characteristics with respect to PVT variations than other families."
}
@article{Caşcaval2010212,
title = "March SR3C: A Test for a reduced model of all static simple three-cell coupling faults in random-access memories",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "212 - 218",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000297",
author = "Petru Caşcaval and Doina Caşcaval",
keywords = "Memory testing",
keywords = "Static fault model",
keywords = "Three-cell coupling fault",
keywords = "Fault primitive",
keywords = "March test",
abstract = "A fault primitive-based analysis of all static simple (i.e., not linked) three-cell coupling faults in n×1 random-access memories (RAMs) is discussed. All realistic static coupling faults that have been shown to exist in real designs are considered: state coupling faults, transition coupling faults, write disturb coupling faults, read destructive coupling faults, deceptive read destructive coupling faults, and incorrect read coupling faults. A new March test with 66n operations able to detect all static simple three-cell coupling faults is proposed. To compare this test with other industrial March tests, simulation results are also presented in this paper."
}
@article{Mohammadzadeh2010219,
title = "Quantum physical synthesis: Improving physical design by netlist modifications",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "219 - 230",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000303",
author = "Naser Mohammadzadeh and Mehdi Sedighi and Morteza Saheb Zamani",
keywords = "Quantum computing",
keywords = "Physical design",
keywords = "Physical synthesis",
keywords = "Gate exchanging",
abstract = "Quantum circuit design flow consists of two main tasks: synthesis and physical design. In the current flows, two procedures are performed subsequently and without any information sharing between two processes that can limit the optimization of the quantum circuit metrics; synthesis converts the design description into a technology-dependent netlist and then physical design takes the fixed netlist, produces the layout, and schedules the netlist on the layout. To address the limitations imposed on optimization of the quantum circuit objectives because of no information sharing between synthesis and physical design processes, in this paper we introduce physical synthesis concept in quantum circuits to improve the objectives by manipulating layout or netlist locally considering layout information. We propose a technique for physical synthesis in quantum circuits using gate-exchanging heuristic to improve the latency of quantum circuits. Moreover, a physical design flow enhanced by the technique is proposed. Our experimental results show that the proposed physical design flow empowered by the gate exchanging technique decreases the average latency objective of quantum circuits by about 24% for the attempted benchmarks."
}
@article{Yúfera2010231,
title = "Design of a CMOS closed-loop system with applications to bio-impedance measurements",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "231 - 239",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000315",
author = "Alberto Yúfera and Adoración Rueda",
keywords = "Impedance measurements",
keywords = "Electrical bio-impedance",
keywords = "Electronic instrumentation",
keywords = "Biometric circuits",
keywords = "CMOS analog circuits",
keywords = "Sensory systems",
abstract = "This paper proposes a method for impedance measurements based on a closed-loop implementation of CMOS circuits. The proposed system has been conceived for alternate current excited systems, performing simultaneously driving and measuring functions, thanks to feedback. The system delivers magnitude and phase signals independently, which can be optimized separately, and can be applied to any kind of load (resistive and capacitive). Design specifications for CMOS circuit blocks and trade-offs for system accuracy and loop stability have been derived. Electrical simulation results obtained for several loads agree with the theory, enabling the proposed method to any impedance measurement problem, in special, to bio-setups including electrodes."
}
@article{Sun2010240,
title = "A fully integrated CMOS voltage regulator for supply-noise-insensitive charge pump PLL design",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "240 - 246",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000327",
author = "Quan Sun and Youguang Zhang and Christine Hu-Guo and Kimmo Jaaskelainen and Yann Hu",
keywords = "Jitter",
keywords = "PLL",
keywords = "Power supply noise",
keywords = "Voltage regulators",
abstract = "In this paper, a new design of on-chip CMOS voltage regulator, which provides two stable power supplies to charge pump and voltage controlled oscillator (VCO) in charge pump phase-locked loop (PLL), is presented. A power supply noise rejection (PSNR) whose peaking is less than −40 dB is achieved over the entire frequency spectrum for VCO supply. The voltage regulator provides maximum 14 mA current, and static current is about 780 μA at 3.3 V. Based on the proposed voltage regulator, a PLL clock generator has been developed and measured in the AMS 0.35 μm CMOS process. Operating at 160 MHz, a period jitter of 13.64 ps was measured under a clean power supply, while period jitter became 16.24 ps under a power supply modulated with a 400 mV, 10 kHz square wave."
}
@article{Butzen2010247,
title = "Standby power consumption estimation by interacting leakage current mechanisms in nanoscaled CMOS digital circuits",
journal = "Microelectronics Journal",
volume = "41",
number = "4",
pages = "247 - 255",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626921000042X",
author = "Paulo F. Butzen and Leomar S. da Rosa Jr and Erasmo J.D. Chiappetta Filho and André I. Reis and Renato P. Ribas",
keywords = "Static power dissipation",
keywords = "Subthreshold leakage",
keywords = "Gate oxide tunneling",
keywords = "CMOS complex gates",
abstract = "Leakage currents are gaining importance as design parameters in nanometer CMOS technologies. A novel leakage current estimation method, which takes into account the dependency of leakage mechanisms, is proposed for general CMOS complex gates, including non-series–parallel transistor arrangements, not covered by existing approaches. The main contribution of this work is a fast, accurate, and systematic procedure to determine the potentials at transistor network nodes for calculating standby static currents. The proposed method has been validated through electrical simulations, showing an error smaller than 7% and an 80× speed-up when comparing to electrical simulation."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00034-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000340",
key = "tagkey2010IFC"
}
@article{Soltani201075,
title = "A step-up transformer impedance transformation technique for efficient power harvesting of passive transponders",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "75 - 84",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002316",
author = "Nima Soltani and Fei Yuan",
keywords = "Transponders",
keywords = "Wireless power harvest",
keywords = "CMOS integrated circuits",
abstract = "This paper proposes a step-up transformer impedance transformation technique to improve the power efficiency of radio-frequency power harvesters of passive transponders. The step-up transformer with a large turn ratio is inserted between the antenna and the voltage multiplier to boost the amplitude of the RF signals at the input of the voltage multiplier while providing a matching impedance to the antenna for maximum power transfer and zero reflection. By making the spiral of the primary winding wider and that of the secondary narrower, the ohmic loss of the primary winding and the spiral-substrate loss of the secondary winding of the transformer are minimized simultaneously. The silicon consumption of the step-up transformer impedance transformation network is also minimized by employing the stack configuration of transformers with the secondary winding implemented using an upper metal layer and the primary winding implemented using a lower metal layer. Two RF power harvesters, one with the proposed step-up transformer impedance transformation network and a modified Nakamoto rectifier and the other with a resonating LC impedance transformation network and the same rectifier, are designed in TSMC- 0.18 μ m 1.8 V CMOS technology. Both operate at 2.4 GHz. They are analyzed using ADS from HP and Spectre from Cadence Design Systems. Simulation results demonstrate that the power efficiency of the power harvester with the proposed step-up transformer impedance transformation is significantly higher than that with the LC resonating impedance transformation."
}
@article{Kaushik201085,
title = "An analytical approach to dynamic crosstalk in coupled interconnects",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "85 - 92",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002328",
author = "Brajesh Kumar Kaushik and Sankar Sarkar and Rajendra Prasad Agarwal and R.C. Joshi",
keywords = "Coupled transmission lines",
keywords = "Crosstalk",
keywords = "VLSI CAD",
keywords = "Interconnections",
keywords = "Signal integrity",
abstract = "This paper deals with waveform analysis, crosstalk peak and delay estimation of CMOS gate driven capacitively and inductively coupled interconnects. Simultaneously switching inputs for the coupled interconnects are considered. A transmission line-based coupled model of interconnect is used for analysis. Alpha-power Law model of MOS transistor is used to represent the transistors in CMOS driver. Peaks and delays at far-end of victim line are estimated for conditions when the inputs to the two coupled interconnects are switching in-phase and out-of-phase. The comparison of analytically obtained results with SPICE simulations show that the proposed model captures noise peak and their timing; 90% propagation delay; transition time delay and waveform shape with good accuracy, such as not more than 5% error in crosstalk peak estimation."
}
@article{Guo201093,
title = "A novel spread-spectrum clock generator for suppressing conducted EMI in switching power supply",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "93 - 98",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.012",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900233X",
author = "Haiyan Guo and Haizhou Wu and Bo Zhang and Zhaoji Li",
keywords = "Spread spectrum clock generator (SSCG)",
keywords = "Switching power supply",
keywords = "EMI suppressing",
keywords = "Spread-spectrum frequency modulation (SSFM)",
abstract = "In this paper, a novel spread spectrum clock generator (SSCG) which spreads spectrum with variable current is presented. The proposed SSCG circuit not only occupies a small area but also minimizes effect caused by leakage current. The proposed SSCG circuit has been fabricated in a 0.5 μm BCD process and applied to a fly-back converter. The effectiveness of the proposed SSCG circuit in terms of peak EMI reduction is demonstrated theoretically and confirmed with experimental results."
}
@article{Raji201099,
title = "Process variation-aware performance analysis of asynchronous circuits",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "99 - 108",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002341",
author = "Mohsen Raji and Behnam Ghavami and Hossein Pedram and Hamid R. Zarandi",
keywords = "Asynchronous circuits",
keywords = "Process variation",
keywords = "Spatial correlation",
keywords = "Timed Petri-Net",
abstract = "Current technology trends have led to the growing impact of process variations on performance of asynchronous circuits. As it is imperative to model process parameter variations for sub-100nm technologies to produce a more real performance metric, it is equally important to consider the correlation of these variations to increase the accuracy of the performance computation. In this paper, we present an efficient method for performance evaluation of asynchronous circuits considering inter- and intra-die process variation. The proposed method includes both statistical static timing analysis (SSTA) and statistical Timed Petri-Net based simulation. Template-based asynchronous circuit has been modeled using Variant-Timed Petri-Net. Based on this model, the proposed SSTA calculates the probability density function of the delay of global critical cycle. The efficiency for the proposed SSTA is obtained from a technique that is derived from the principal component analysis (PCA) method. This technique simplifies the computation of mean, variance and covariance values of a set of correlated random variables. In order to consider spatial correlation in the Petri-Net based simulation, we also include a correlation coefficient to the proposed Variant-Timed Petri-Net which is obtained from partitioning the circuit. We also present a simulation tool of Variant-Timed Petri-Net and the results of the experiments are compared with Monte Carlo simulation-based method."
}
@article{Fırat2010109,
title = "New lossless inductance simulators realization using a minimum active and passive components",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "109 - 113",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000029",
author = "Fırat and Kaçar",
keywords = "Inductance simulator",
keywords = "Fully differential current conveyor",
keywords = "Filter",
keywords = "Non-ideal analysis",
abstract = "In this paper, five new lossless grounded inductance simulators are presented. All proposed inductor simulator circuits employ with only a single Fully Differential Second-Generation Current Conveyor (FDCCII), two resistors and a capacitor are proposed. Moreover, all passive components are grounded therefore the proposed inductance simulator circuits offer ease of integration and tuning advantages with low sensitivities. To demonstrate the performance of the proposed FDCCII-based inductance simulators, we use one of the circuits to construct a current-mode multifunction filter. The proposed inductance simulator circuits and current-mode multifunction filter are simulated with SPICE program. Simulation results are given to verify the theoretical analysis."
}
@article{Tian2010114,
title = "Spurious signals due to amplitude quantization in direct digital frequency synthesizers",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "114 - 120",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000030",
author = "Xinguang Tian and Zhilong Zhang and Eryang Zhang",
keywords = "Direct digital frequency synthesizer",
keywords = "Spurious signal",
keywords = "Amplitude quantization",
keywords = "Phase truncation",
keywords = "Numerically controlled oscillator",
abstract = "Amplitude quantization and phase truncation are two main mechanisms which lead to the occurrence of spurious signals in direct digital frequency synthesizers (DDFSs). These signals are deterministic and periodic in the time domain, so they appear as line spectra in the frequency domain. In this paper, the discrete time versions of two types of spurious signals due to amplitude quantization in DDFSs are expressed and their time-domain characteristics are detailedly analyzed and compared. Then, the spectral properties of the amplitude-quantization spurs in the absence or presence of phase-accumulator truncation are derived by waveform symmetry and uniform-permutation estimation along with discrete Fourier transform. The effects of phase truncation and parameter variation on the amplitude-quantization spurs are studied by computer simulation. The derivation and simulation give strong insight into the spur magnitude and spectral location, and can provide theoretical and empirical supports for practical DDFS implementation and performance evaluation."
}
@article{Yuan2010121,
title = "The design and optimization methodology of a low-distortion sub- sample-and-hold stage for weak bio-currents",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "121 - 128",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000121",
author = "Jie Yuan and Ka Leong Tsang",
keywords = "Switched-current circuits",
keywords = "Current sample/hold",
keywords = "Micro-power analog circuits",
keywords = "Circuit optimization",
abstract = "Current sample-and-hold (SHI) stage is important for reducing the signal distortion of bio-medical current detectors. Previous SHIs achieve high linearity only with high power consumption. This paper introduces a low-distortion switched-current (SI) sample-and-hold stage for high-performance current sampling of weak currents, by applying constant charge injection on a weakly inverted MOS transistor. The paper also introduces a methodology to design and optimize the SHI for a target signal-to-noise-distortion ratio (SNDR). A sample SHI is designed according to the methodology in a 0.35 μ m CMOS process. Silicon measurements verify that the fabricated SHI meets the design targets, and can achieve above 58 dB SNDR and above 68 dB spurious-free dynamic range (SFDR) at the sampling rate of 2 kS/s for a 100 nA input current up to 1 kHz. The power consumption of the SHI is only 0.7 μ W ."
}
@article{Suwa2010129,
title = "Optimal placement of heat generating components at various levels of electronics packaging",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "129 - 134",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000133",
author = "Tohru Suwa and Hamid Hadim",
keywords = "Component placement optimization",
keywords = "Electronics packaging",
keywords = "Artificial neural network",
abstract = "A multidisciplinary placement optimization methodology for heat generating electronics components is demonstrated at various levels of electronics packaging design. The proposed methodology is capable of handling a large number of conflicting multidisciplinary design requirements and complex trade-offs including thermal, mechanical, electrical, electromagnetic, cost among others, which are optimized simultaneously using a genetic algorithm. An effective thermal performance prediction methodology is developed to shorten the calculation time while retaining sufficient accuracy. For simpler thermal problems, a superposition method is used to predict the temperature distribution caused by arbitrarily placed multiple heat sources. For more complex problems (e.g. variable local heat transfer coefficient) artificial neural networks (ANNs) and the superposition method are combined for more efficient prediction of surface (case) and junction temperatures. The proposed methodology is designed to handle existing complex design trade-offs at the crucial early design stage. Capabilities of the present methodology are demonstrated by applying it to several standard benchmarks at the enclosure (PCB) and chip (logic block) levels."
}
@article{Sosa2010135,
title = "Application of genetic algorithm in computing the tradeoffs between power consumption versus delay in digital integrated circuit design",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "135 - 141",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000194",
author = "J. Sosa and Juan A. Montiel-Nelson and Saeid Nooshabadi",
keywords = "Power optimization",
keywords = "Tradeoff curve",
keywords = "Gate sizing",
keywords = "Critical path",
keywords = "Genetic algorithms",
keywords = "Linear programming",
abstract = "This paper presents a novel methodology to obtain the entire power consumption versus delay tradeoff curve for the critical paths of a combinational logic circuit in a very efficient way using the genetic algorithm (GA). In order to evaluate the proposed algorithm the most representative set of two-level and multi-level networks from the MCNC91 benchmark suite were processed. The required computational effort, measured in terms of CPU time, is several times better for the proposed GA optimization technique than liner programming (LP) technique. On the other hand, the optimal design points obtained by the GA and LP techniques are very close to each other to within 0.3%."
}
@article{Mahdavian2010142,
title = "Alcohol sensors based on SWNT as chemical sensors: Monte Carlo and Langevin dynamics simulation",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "142 - 149",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000200",
author = "L. Mahdavian and M. Monajjemi",
keywords = "SWNT",
keywords = "CH3OH and C2H5OH",
keywords = "Monte Carlo (MC) simulation",
keywords = "Langevin dynamics (LD) simulation",
abstract = "In this research the decomposition products of the alcohol gases and their decomposition stages at the surface of the elements of single walled carbon nanotube (SWNT)-based powder are analyzed. The SWNT-based powders catalytically oxidized ethanol and methanol. The nano-crystalline and nanotubes have low band gaps and high mobility, thus offer applied potential as gas adsorption. Interaction between alcohol molecules and SWNT is investigated using Monte Carlo (MC) and Langevin dynamics (LD) simulation methods. We study the structural, total energy, thermodynamic properties and the acceptance ratio of methanol gas passing through an: armchair SWNT (4, 4) at different temperatures. Passing gas in SWNT changed the properties of it, in this research we have calculated the electrical and structural charges, in addition, transfer of charges from atoms to SWNT was investigated and it was found that there is a direct relation between the total energy and temperature.
We study the structure, total energy and energy band gaps of absorption of CH3OH and C2H5OH in SWNT. When exposed to methanol and ethanol, the SWNT-based sensors showed oxidation of products consisting of CH3O and C2H5O. They are calculated with MC and LD simulation methods at different temperatures. All calculations are carried out using Hyperchem7.0 program package."
}
@article{Wang2010150,
title = "A low-power 2.45 GHz WPAN modulator/demodulator",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "150 - 154",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000212",
author = "Chua-Chin Wang and Gang-Neng Sung and Jian-Ming Huang and Lung-Hsuan Lee and Chih-Peng Li",
keywords = "WPAN",
keywords = "Direct sequence spread spectrum (DSSS)",
keywords = "Wireless network",
keywords = "MSK",
keywords = "Low-power",
abstract = "This paper presents the architecture as well as the circuit implementation of a wireless personal area networks (WPAN) modulator/demodulator using 2.45 GHz band compliant with the physical layer standard of IEEE 802.15.4. A noncoherent demodulation scheme is employed to resolve the complexity and power dissipation problem, where a phase-shift down sampling method is adopted to detect the maximum phase accumulation which is the location of the correct data. A prototypical system on silicon with core area of 0.39 mm2 has been realized by using 0.18 μ m CMOS process. The packet error rate (PER) is measured to be < 1 % given the SNR of 9 dB. The total power consumption is merely 1.37 mW (included Tx and Rx) given a 8.0 MHz system clock."
}
@article{Kurniawan2010155,
title = "Simplified model for ballistic current–voltage characteristic in cylindrical nanowires",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "155 - 161",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000224",
author = "Oka Kurniawan and Man-Fai Ng and Wee Shing Koh and Zuan Yi Leong and Erping Li",
keywords = "Quantum transport",
keywords = "Nanowires",
keywords = "Optoelectronic",
keywords = "Ballistic",
keywords = "Negf",
keywords = "Simulation",
abstract = "The ballistic regime gives the upper limit of an electron device performance. This paper proposes a fast and efficient model for calculating the current–voltage characteristic of a cylindrical nanowire within the framework of the non-equilibrium Green's function. Under certain assumptions, the calculation is simplified to a one-dimensional problem and the modes due to the radial confinement are given by an analytical equation. We further derive an analytical expression for the current–voltage characteristic at temperature approaching 0 K. The relationship between the radius of the nanowire and the electrical current is clearly shown in this expression. The effects of the radius on the current–voltage characteristic curve are also studied. Furthermore, we plot the trend of the saturation current as the radius is increased as predicted by both the numerical result and our analytical model. Our proposed model can be further used to include electron–photon interaction in the calculation of nanoscale optoelectronic devices."
}
@article{Wen2010162,
title = "A comprehensive analytical study of an undoped symmetrical double-gate MOSFET after considering quantum confinement parameter",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "162 - 170",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000236",
author = "Tiw Pei Wen and Ajay Kumar Singh",
keywords = "Symmetrical double-gate MOSFET",
keywords = "Poisson's equation",
keywords = "Quantum confinement effect",
keywords = "Gradual channel approximation",
keywords = "Threshold voltage shift",
keywords = "Mobile charge density",
abstract = "This paper presents analytical models of threshold voltage, carrier concentration and drain current for undoped symmetrical double-gate (SDG) MOS devices. The analytical models are derived after solving the Poisson's equation under Gradual Channel Approximation (GCA). Quantum mechanical effect in ultrathin silicon film is studied by introducing quantum confinement parameter and quantum corrected potential in the Poisson's equation instead of solving complex Schrödinger–Poisson's equation. The confinement parameter, which depends on film thickness, work function and gate bias decreases with film thickness. Quantum corrected potential attains its maximum value near the interface and minimum value at the centre of the silicon film. The mobile carrier density and surface potential are reduced due to quantum confinement effect. The simulation result of the threshold voltage shows excellent agreement with quantum numerical results."
}
@article{Liu2010171,
title = "Defect detection of IC wafer based on two-dimension wavelet transform",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "171 - 177",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.01.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000248",
author = "Hongxia Liu and Wen Zhou and Qianwei Kuang and Lei Cao and Bo Gao",
keywords = "Defect detection",
keywords = "Integrated circuit (IC) wafer",
keywords = "Two-dimension wavelet transform",
abstract = "Defect detection of integrated circuit (IC) wafer based on two-dimension wavelet transform (2-D DWT) is presented in this paper. By utilizing the characteristics many of the same chips in a wafer, three images with defects located in the same position and different chips are obtained. The defect images contain the standard image without any defects. 2-D DWT presented in the paper can extract the standard image from the three defect images. The algorithm complexity of the method is close to that of 2-D DWT. After obtaining the standard image, the speed and accuracy of defects detection can be greatly enhanced using the detection method presented in the paper. Using the image gray-scale matching technology, impact of illumination on IC defect detection is solved. Experiments demonstrate that 2-D DWT is fast and accurate to defects detection in an IC image, and the method has high robustness for illumination."
}
@article{Tangsrirat2010178,
title = "Resistorless realization of current-mode first-order allpass filter using current differencing transconductance amplifiers",
journal = "Microelectronics Journal",
volume = "41",
number = "2–3",
pages = "178 - 183",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2010.02.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000261",
author = "Worapong Tangsrirat and Tattaya Pukkalanun and Wanlop Surakampontorn",
keywords = "Current differencing transconductance amplifier (CDTA)",
keywords = "Allpass filter",
keywords = "Current-mode circuits",
abstract = "This paper presents a realization of a current-mode first-order allpass filter using two current differencing transconductance amplifiers (CDTAs) as the active components and one virtually grounded capacitor as the only passive component. The proposed filer requires no external resistor and is electronically adjustable by varying the external bias current of the CDTA. No component-matching constraints are required. The circuit realizes both inverting and non-inverting types of allpass filters, and also exhibits high-output impedances, which are easy cascading in the current-mode operation. As an application of the proposed CDTA-based allpass section, a current-mode quadrature oscillator is realized. PSPICE simulation results are given to confirm the theoretical analysis."
}
@article{tagkey2010IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "IFC - ",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(10)00005-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269210000054",
key = "tagkey2010IFC"
}
@article{Parvizi20101,
title = "Low-power highly linear UWB CMOS mixer with simultaneous second- and third-order distortion cancellation",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "1 - 8",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.10.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002055",
author = "Mahdi Parvizi and A. Nabavi",
keywords = "Derivative superposition",
keywords = "Distortion cancellation",
keywords = "Inter-modulation distortion",
keywords = "Ultra-wideband mixer",
keywords = "Volterra series analysis",
abstract = "A 3.1–4.8 GHz mode-1 UWB CMOS mixer that utilizes simultaneous second- and third-order distortion cancellation is presented. The scheme is based on a new derivative superposition, employing PMOS as an auxiliary FET to cancel the second- and the third-order nonlinear currents of common-source transconductance in the mixer and gives rise to low-distortion operation for a broad range of gate-source voltage. Full Volterra series analysis of the proposed transconductance is reported to examine the effectiveness of the new technique. Simulations in a 0.13 μm CMOS technology demonstrate that IIP3 and IIP2 of the proposed mixer have 18 and 10 dB improvements, respectively, compared with conventional Gilbert-type mixer with the same power consumption. The robustness of the technique has been verified by Monte Carlo analysis. The mixer has a gain of 12 dB and noise figure of 13 dB, while drawing only 2.5 mA from 1.2 V supply voltage."
}
@article{Savidis20109,
title = "Electrical modeling and characterization of through-silicon vias (TSVs) for 3-D integrated circuits",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "9 - 16",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002067",
author = "Ioannis Savidis and Syed M. Alam and Ankur Jain and Scott Pozder and Robert E. Jones and Ritwik Chatterjee",
keywords = "3D integration",
keywords = "Vias",
keywords = "TSV",
keywords = "Electrical characterization",
keywords = "Via parasitics",
keywords = "IO delay",
abstract = "The integration of chips in the third dimension has been explored to address various physical and system level limitations currently undermining chip performance. In this paper, we present a comprehensive analysis of the electrical properties of through silicon vias and microconnects with an emphasis on single via characteristics as well as inter-TSV capacitive and inductive coupling in the presence of either a neighboring ground tap or a grounded substrate back plane. We also analyze the impact of technology scaling on TSV electrical parasitics, and investigate the power and delay trend in 3-D interstratum IO drivers with those of global wire in 2-D circuits over various technology nodes. We estimate the global wire length necessary to produce an equivalent 3-D IO delay, a metric useful in early stage design tools for 3D floorplanning that considers the electrical characteristics of 3D connections with TSVs and microconnects."
}
@article{Prodromakis201017,
title = "Application of Maxwell–Wagner polarization in delay lines",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "17 - 24",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002195",
author = "T. Prodromakis and C. Papavassiliou and C. Toumazou",
keywords = "Slow-wave",
keywords = "Maxwell–Wagner",
keywords = "Interfacial polarisation",
keywords = "High dielectric",
keywords = "MIS lines",
keywords = "Delay lines",
abstract = "The propagation characteristics of metal–insulator–semiconductor (MIS) lines are controlled by the resistivity of the substrate, the operating frequency and the ratio of the semiconductor to insulator layer thicknesses. A strong interfacial polarisation, also known as the Maxwell–Wagner polarisation, is often responsible for the significant slow-down of the propagation velocity of MIS microstrip transmission lines. This phenomenon has been applied in the development of miniature delay lines exhibiting large electrical dimensions. In this paper we review most previously presented designs and we examine the effect of this polarization mechanism under various parameters. Finally, the presented micro-scale delay lines, exhibit comparable slowing factors with our predecessors at the cost of lower attenuation."
}
@article{Gupta201025,
title = "FGMOS based voltage-controlled resistor and its applications",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "25 - 32",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002213",
author = "Maneesha Gupta and Rishikesh Pandey",
keywords = "Divider",
keywords = "Floating gate MOSFETs",
keywords = "Transresistance amplifier",
keywords = "Resistor",
abstract = "The paper presents floating gate MOSFET (FGMOS) based low-voltage tunable resistor operating at supply voltages of ±0.75 V. The proposed circuit is then used as basic building block to develop tunable negative resistor, current-mode divider, and variable transresistance amplifier. The circuit is simple, compact, and accurate. The total power dissipation of the proposed circuit is 18.6 μW. The circuits are simulated to demonstrate the effectiveness using SPICE in 0.5-μm CMOS technology."
}
@article{Rahaman201033,
title = "Energy efficiency of error control coding in intra-chip RF/wireless interconnect systems",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "33 - 40",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002225",
author = "Md. Sajjad Rahaman and Masud H. Chowdhury",
keywords = "Bit-error rate",
keywords = "Interconnect",
keywords = "Metal interconnect",
keywords = "Intra-chip communication",
keywords = "RF/wireless interconnects",
abstract = "Continuous scaling of conventional hard-wired metal interconnects into deep sub-micrometer region (DSM) has resulted in significant performance degradation in terms of delay, crosstalk noise, higher power dissipation, and decreased tolerance to noise. Besides, communication-centric nature of system-on-chip (SOC) networks requires efficient intra- and inter-chip interconnect technologies. Radio-frequency (RF)/wireless interconnects promise to be the best alternative to metal interconnects as they are compatible with current CMOS-technology, and they also provide higher data rate and bi-directional multi I/O transmissions. This paper evaluates the system bit-error-rate (BER) performance with the application of fault-tolerance capability using linear error-control codes (ECCs) within chip (intra-chip) RF/wireless interconnect systems. It also evaluates the utility of ECCs by considering energy consumed in ECC encoding–decoding vis-à-vis the energy saved due to coding gain by calculating the critical distance (dcr). The results indicate that for a certain range of received signal-to-noise ratio (SNR), application of ECC improves the BER performance of the RF/wireless interconnect system. It is also shown that dcr drops to 0.7 mm at 18 GHz."
}
@article{Nunez–Perez201041,
title = "Design of 20 GHz high performance LC-VCOs in a 52 GHz fT SiGe:C BiCMOS technology",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "41 - 50",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002237",
author = "José Cruz Nunez–Perez and Jacques Verdier and Christian Gontrand",
keywords = "Voltage controlled oscillator",
keywords = "BiCMOS",
keywords = "Noises",
keywords = "Phase noise",
abstract = "The design and analysis of fully integrated 20 GHz voltage controlled oscillators (VCOs) for low cost and low power communication system are presented in this paper. Two differential topographies have been studied: balanced Colpitts VCO and LC-VCO using a cross-coupled differential pair. We have focused on oscillation frequency, tuning range, phase noise, output power optimization and buffer stage specifications. SiGe:C hetero-junction bipolar transistors of a 52 GHz cut-off frequency have been used and produced via a monolithic BiCMOS technology."
}
@article{DongSheng201051,
title = "New design of RF rectifier for passive UHF RFID transponders",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "51 - 55",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002249",
author = "Liu Dong-Sheng and Zou Xue-Cheng and Dai Kui and Li Si-Zheng and Hui Xue-Mei and Liu Yao and Tong Qiao-Ling",
keywords = "Radio frequency identification",
keywords = "Passive transponders",
keywords = "Diode-connected MOS transistor",
keywords = "Rectifier",
keywords = "Power conversion efficiency",
abstract = "A novel diode-connected MOS transistor for ultra-high-frequency (UHF) micro-power rectifiers was presented, and a high efficiency N-stage charge pump voltage rectifier based on this new diode-connected MOS transistor was designed and implemented. The new diode-connected MOS transistor and the rectifier are designed and fabricated in SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The structure design of the new diode achieved 315 mV turn-on voltage, and 415 nA reverse saturation leakage current. Compared with traditional rectifier, the rectifier using the presented diode-connected MOS has higher power conversion efficiency (PCE), higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the amplitude ranging from 0.8 to 1.8 V, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.02 V, and its ripple coefficients are less than 1%."
}
@article{Yang201056,
title = "Design and simulation of sequential circuits in quantum-dot cellular automata: Falling edge-triggered flip-flop and counter study",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "56 - 63",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002298",
author = "Xiaokuo Yang and Li Cai and Xiaohui Zhao and Nansheng Zhang",
keywords = "Quantum-dot cellular automata",
keywords = "Clock zones",
keywords = "J-K flip-flop",
keywords = "Synchronous counter",
abstract = "Quantum-dot Cellular Automata (QCA) is an emerging nanotechnology, with extremely small feature size and ultralow power consumption comparing with transistor-based technology. Anteriority, basic level-triggered flip-flop designs based on QCA implementation were examined. In this paper, we utilize the unique QCA characteristics and clock zones to design falling edge-triggered J-K flip-flop that is stable and practical. Simulation with the QCADesigner simulator is performed to verify the functionality of the proposed falling edge-triggered flip-flop. This paper also explores the design of counters. Synchronous counters are designed with several different bit sizes and simulation results demonstrate the validity of them."
}
@article{DŁugosz201064,
title = "Low power current-mode binary-tree asynchronous Min/Max circuit",
journal = "Microelectronics Journal",
volume = "41",
number = "1",
pages = "64 - 73",
year = "2010",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.12.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002304",
author = "RafaŁ DŁugosz and Tomasz Talaśka",
keywords = "Min/Max circuits",
keywords = "Current-mode",
keywords = "Asynchronous circuits",
keywords = "Parallel data processing",
keywords = "Kohonen neural networks",
keywords = "Nonlinear filters",
abstract = "A novel, current-mode, binary-tree, asynchronous Min/Max circuit for application in nonlinear filters as well as in analog artificial neural networks is proposed. The relatively high precision above 99% can be achieved by eliminating the copying of the input signals from one layer to the other in the tree. In the proposed solution, the input signals are always directly copied to particular layers using separate signal paths. This makes the precision almost independent on the number of the layers i.e. the number of the inputs. The circuit is a flexible solution. The power dissipation, as well as data rate can be scaled up and down in a wide range. For an average value of the input currents of 20 μA and data rate of 11 MHz the circuit dissipates 505 μW, while for the signals of 200 nA and data rate of 500 kHz the power dissipation is reduced to 1 μW. The prototype circuit with four inputs, realized in the CMOS 0.18 μm technology, occupies the area of 1800 μm2."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "IFC - ",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00208-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002080",
key = "tagkey2009IFC"
}
@article{Petraglia20091673,
title = "Switched-capacitor decimation filter design using time-multiplexing and polyphase decomposition of transfer functions with low denominator orders",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1673 - 1680",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.07.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900127X",
author = "A. Petraglia and F.A.P. Barúqui and J.S. Pereira",
keywords = "CMOS analog integrated circuits",
keywords = "Multirate",
keywords = "Polyphase decomposition",
keywords = "Switched-capacitor filters",
abstract = "A new switched-capacitor decimation filter design technique is presented. Based on a combination of the polyphase decomposition of IIR low-pass transfer functions having small denominator order and time-multiplexed operational transconductance amplifiers, the filter presents very low sensitivity to transfer function coefficients. It suits analog front-end systems by providing signal conditioning and relaxing the filtering requirements in converting between continuous-time and discrete-time signals. A prototype decimation filter has been designed and fabricated in a standard CMOS process to verify the proposed approach. In fully differential design, the filter has a die area of 2.8 mm2, dissipates 67.2 mW out of a 5 V power supply and achieves a dynamic range of 58 dB at 1% THD. Experimental measurements are found in close agreement with theory."
}
@article{Zhang20091681,
title = "Modeling of carbon nanotube field-effect transistor with nanowelding treatment",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1681 - 1685",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001323",
author = "Wei Zhang and Changxin Chen and Yafei Zhang",
keywords = "Carbon nanotube field-effect transistor (CNFET)",
keywords = "Schottky barrier (SB)",
keywords = "Ambipolar conduction",
keywords = "Newton–Raphson iteration",
abstract = "An efficient and universal numerical model of carbon nanotube (CN) field-effect transistor (FET) with nanowelding treatment has been developed. In this model, an analytic expression of carrier distribution of intrinsic CN is incorporated into the modified Poisson equation where a parameter η is adopted to account for the effect of ultrasonic nanowelding on the CN/metal contact. The electrostatic potential of CN is derived by Newton–Raphson iteration which makes the model efficient for the CNFET simulation. The current–voltage characteristics are calculated using the Landauer formalism. The device performance is investigated in detail by scaling power supply voltage, insulator thickness and CN diameter."
}
@article{Jaber20091686,
title = "Design of parallel fault-secure encoders for systematic cyclic block transmission codes",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1686 - 1697",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001542",
author = "Houssein Jaber and Fabrice Monteiro and StanisŁaw J. Piestrak and Abbas Dandache",
keywords = "Concurrent error detection",
keywords = "Cyclic linear block codes",
keywords = "Encoder",
keywords = "Error-correcting codes",
keywords = "Fault-secure circuit",
keywords = "Fault-tolerant RAM",
keywords = "Self-checking circuit",
abstract = "In this paper, we consider the problem of designing parallel fault-secure encoders for various systematic cyclic linear codes used in data transmission. It is assumed that the data to be encoded before transmission are stored in a fault-tolerant RAM memory system protected against errors using a cyclic linear error detecting and/or correcting code. The main idea relies on taking advantage of the RAM check bits to control the correct operation of the cyclic code encoder as well. A slightly modified encoder allows not only for encoding the transmission data stream but also, independently and in parallel, to generate the reference check bits which allow for concurrent error detection in the encoder itself. The error detection capacity proves to be effective and grants good levels of protection as shown by error injection campaigns on encoders for various standard linear cyclic error detecting and error correcting codes. Moreover, the complexity evaluation of the FPGA implementations of the encoders shows that their fault-secure versions compare favorably against the unprotected ones, both with respect to hardware complexity and the maximal frequency of operation."
}
@article{Wei20091698,
title = "A novel complementary Colpitts differential CMOS VCO with low phase noise performance",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1698 - 1704",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001554",
author = "Chien-Cheng Wei and Hsien-Chin Chiu and Yi-Tzu Yang and Jeffrey S. Fu",
keywords = "Voltage-controlled oscillators",
keywords = "Low phase noise",
keywords = "Complementary Colpitts",
keywords = "Differential-ended",
abstract = "A low phase noise Ka-band CMOS voltage-controlled oscillator is proposed in this paper. A new complementary Colpitts structure was adopted in a 0.18-μm CMOS process to achieve differential-ended outputs, low phase-noise performance, and low-power consumption. The designed VCO oscillates from 29.8 to 30 GHz with 200 MHz tuning range. The measured phase noise at 1-MHz offset is −109 dBc/Hz at 30 GHz and −105.5 dBc/Hz at 29.8 GHz. The power consumption of VCO is only 27 mW. In addition, compared with the published papers, the proposed CMOS VCO achieves the best figure of merit (FOM) of −185 dB at 29.95-GHz band."
}
@article{PerezAndrade20091705,
title = "A versatile linear insertion sorter based on an FIFO scheme",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1705 - 1713",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001566",
author = "Roberto Perez-Andrade and Rene Cumplido and Claudia Feregrino-Uribe and Fernando Martin Del Campo",
keywords = "Hardware sorters",
keywords = "Linear sorters",
keywords = "FIFO",
abstract = "A linear sorter based on a first-in first-out (FIFO) scheme is presented. It is capable of discarding the oldest stored datum and inserting the incoming datum while keeping the rest of the stored data sorted in a single clock cycle. This type of sorter can be used as a co-processor or as a module in specialized architectures that continuously require to process data for non-linear filters based on order statistics. This FIFO sorting process is described by four different parallel functions that exploit the natural hardware parallelism. The architecture is composed of identical processing elements; thus it can be easily adapted to any data lengths, according to the specific application needs. The use of compact identical processing elements results in a high performance yet small architecture. Some examples are presented in order to understand the functionality and initialization of the proposed sorter. The results of synthesizing the proposed architecture targeting a field programmable gate array (FPGA) are presented and compared against other reported hardware-based sorters. The scalability results for several sorted elements with different bits widths are also presented."
}
@article{Tu20091714,
title = "Linearity optimizing on HBT power amplifier design",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1714 - 1718",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001578",
author = "M.C. Tu and Y.C. Wang and H.Y. Ueng",
keywords = "HBT",
keywords = "Collector–base capacitance",
keywords = "Epitaxial",
keywords = "Adjacent channel power ratio",
abstract = "Highly linearized of HBT power amplifier (PA) was achieved for wireless digital mobile communication systems. This study investigates in detail the improvement of the linearity of HBT power amplifiers. The dependence of collector–base capacitance (Cbc) on bias is regarded initially as a trade-off between linearity and breakdown voltage. A simulation of device performed using SILVACO software reveals that at a capacitance ratio; Cbc (0/6 V) is 1.25 at a BVceo of 22 V. The device-level DC characteristic, load-pull power performance and power cell PAs are evaluated. A reasonably high PAE ~55% is attainable at 2.0 GHz and an adjacent channel leakage power ratio (ACPR) of over −48 dBc is achieved. The maximum achievable PAE is 54% with a maximum power density of 0.75 W/mm at 5.8 GHz. The novel HBT epitaxial structure, the layout of power cell design and the thick metal shunt process used to ensure the high linearity of the power cell are demonstrated."
}
@article{Erkan20091719,
title = "Current-mode electronically tunable biquadratic filters consisting of only CCCIIs and grounded capacitors",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1719 - 1725",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001670",
author = "Erkan and Yuce",
keywords = "Current-mode",
keywords = "Analog filter",
keywords = "Current controlled conveyor",
keywords = "CCCII",
abstract = "In this paper, a current-mode (CM) analog filter for simultaneously realizing high output impedance low-pass, band-pass and high-pass analog responses besides high output impedance notch and all-pass analog filter responses with interconnection of the relevant output currents, is presented. Also, two CM filters for simultaneously providing high output impedance universal filter responses are derived from the proposed one. All of the introduced CM topologies employ a canonical number of only grounded capacitors without requiring any resistors, and do not need critical component matching conditions. All of the developed circuits have low input impedance and high output impedance resulting in easy cascadability with other CM ones. Frequency dependent non-ideal gain and parasitic impedance effects on the performance of the presented first filter are investigated as examples. In order the show the performance of the filter and verify the theory, simulations are accomplished with SPICE program."
}
@article{Nicolle20091726,
title = "On the use of behavioral modeling within the RFIC design flow: Satellite receiver case study",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1726 - 1735",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001682",
author = "Benjamin Nicolle and Rami Khouri and Fabien Ferrero and William Tatinian and Lorenzo Carpineto and Gilles Jacquemod",
keywords = "Behavioral modeling",
keywords = "RFIC Top–Down design flow",
keywords = "Reuse and refinement",
keywords = "Non-linear RF performance analysis",
keywords = "RF measurements",
abstract = "In order to generate a first-time right design, system level modeling and simulation is a major step. Thus, performance evaluation of integrated wireless systems requires the development of RF behavioral models compatible with the microelectronic design tools. Firstly, this paper shows the need of such models within the RFIC Top–Down design flow. Then, behavioral modeling techniques are presented and several classical RF block models are described. Those models are used within an RFIC satellite receiver validation example and finally, several performance evaluation examples allow demonstrating the capabilities of behavioral modeling, compared to other very used modeling techniques as mathematical and baseband approaches."
}
@article{Quintanilla20091736,
title = "A comprehensive analysis of the effect of finite amplifier bandwidth and excess loop delay in continuous-time sigma–delta modulators",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1736 - 1745",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001700",
author = "L. Quintanilla and J. Arias and J. Segundo and L. Enriquez and J.M. Hernandez-Mangas and J. Vicente",
keywords = "Sigma–delta modulators",
keywords = "Continuous-time",
keywords = "Finite bandwidth",
keywords = "Excess loop delay",
abstract = "A comprehensive study of the impact of the finite gain-bandwidth product (GBW) in amplifiers and the excess loop delay on CT Σ Δ modulators has been carried out in this paper. Variations in the modulator coefficients have been included too. Considering a second order modulator, our study was based on the dependence of the NTF poles and zeroes locus in the z-plane on these two non-ideal effects from both an analytical and a computer simulation approach. The corresponding STFs were also analytically evaluated. The theoretical and the simulated results have been compared with the experimental results obtained from a test-chip recently designed and implemented. Amplifiers were modeled according to a single-pole transfer function. Using the modified Z-transform method the dependence of the NTF poles and zeroes locus in the z-plane on the finite GBW and on excess loop delay was obtained when the DAC pulse end occurs in the current (“early”) or in the following (“late”) clock cycle. Once the theoretical analysis was validated, NTF poles and zeroes loci were evaluated as a function of the two non-ideal effects considered separately or combined. In each case, the order of the modulator loop filter was discussed. The finite GBW effect can be compensated including an intentional “early” DAC pulse. This pulse can be implemented in the modulator by changing the sampling instant in the embedded ADC with respect to the instant DACs are enabled by using a simple delay circuit for the ADC clock. Thus, the modulator power consumption can be significantly reduced."
}
@article{Carmo20091746,
title = "Low-power/low-voltage RF microsystems for wireless sensors networks",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1746 - 1754",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001736",
author = "J.P. Carmo and J.H. Correia",
keywords = "RF microsystems",
keywords = "RF CMOS transceiver",
keywords = "Wireless sensors networks",
abstract = "This paper presents radio-frequency (RF) microsystems (MSTs) composed by low-power devices for use in wireless sensors networks (WSNs). The RF CMOS transceiver is the main electronic system and its power consumption is a critical issue. Two RF CMOS transceivers with low-power and low-voltage supply were fabricated to operate in the 2.4 and 5.7 GHz ISM bands. The measurements made in the RF CMOS transceiver at 2.4 GHz, which showed a sensitivity of −60 dBm with a power consumption of 6.3 mW from 1.8 V supply. The measurements also showed that the transmitter delivers an output power of 0 dBm with a power consumption of 11.2 mW. The RF CMOS transceiver at 5.7 GHz has a total power consumption of 23 mW. The target application of these RF CMOS transceivers is for MSTs integration and for use as low-power nodes in WSNs to work during large periods of time without human operation, management and maintenance. These RF CMOS transceivers are also suitable for integration in thermoelectric energy scavenging MSTs."
}
@article{Ebrard20091755,
title = "Review of fuse and antifuse solutions for advanced standard CMOS technologies",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1755 - 1765",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001748",
author = "Elodie Ebrard and Bruno Allard and Philippe Candelier and Patrice Waltz",
keywords = "Antifuse",
keywords = "Polyfuse",
keywords = "Metalfuse",
keywords = "OTP memory",
keywords = "Non-volatile memory",
abstract = "Specific applications require large amounts of high-performance, dense and low-cost non-volatile memories with CMOS standard process compatibility. There exists numerous structures for one-time-programming (OTP) bitcells, exploiting various physical phenomena as programming modes. Not all of these physical phenomena will behave in a satisfactory manner with the CMOS technology shrink. Moreover, it is not easy to evaluate the effect of geometry and technology on the trade-off between density and reliability of the OTP bitcells.
This paper aims to review literature about OTP memories and show that metal fuse, polyfuse and antifuse are the best candidates so far. Other memories require either additional masks with regards to core process, additional technological steps or unaffordable programming conditions. Significant results will be listed in comparison tables.
This paper also wishes to give a summary of the physical phenomena involved in bitcell architectures. Opinions are given about the suitability of OTP architectures for specific applications, the most suitable bitcell architectures have been layouted in 65 and 45 nm for density comparison purpose. Particularly, promising structures are manufactured and characterized as they present fair trade offs for standard CMOS process. Discussion and conclusion are intended to give a comprehensive review about the parameters impacting the performances, the density and the cost of the OTP bitcell. Comparison tables are edited with the most pertinent parameters and available results."
}
@article{Xiao20091766,
title = "TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1766 - 1771",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001815",
author = "Deyuan Xiao and Xi Wang and Yuehui Yu and Jing Chen and Miao Zhang and Zhongying Xue and Jiexin Luo",
keywords = "Gate-all-around cylindrical (GAAC) transistor",
keywords = "Device physics",
keywords = "TCAD simulation",
keywords = "Fabrication procedure",
abstract = "In this paper, we report TCAD study on gate-all-around cylindrical (GAAC) transistor for sub-10-nm scaling. The GAAC transistor device physics, TCAD simulation, and proposed fabrication procedure have been discussed. Among all other novel fin field effect transistor (FinFET) devices, the gate-all-around cylindrical device can be particularly used for reducing the problems of conventional multi-gate FinFET, improving device performance, and scaling-down capabilities. With gate-all-around cylindrical architecture, the transistor is controlled essentially by infinite number of gates surrounding the entire cylinder-shaped channel. Electrical integrity within the channel is improved by reducing the leakage current due to the non-symmetrical field accumulation such as the corner effect. Our proposed fabrication procedure for making devices having the gate-all-around cylindrical (GAAC) device architecture is also discussed."
}
@article{SiqueiraDias20091772,
title = "A curvature-compensated CMOS voltage reference using characteristics",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1772 - 1778",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001852",
author = "José A. Siqueira Dias and Welligton A. do Amaral and Wilmar B. de Moraes",
keywords = "CMOS voltage reference",
keywords = "Temperature coefficient",
keywords = "Analogue circuits",
keywords = "Curvature compensation",
abstract = "A novel technique for the design of very low temperature coefficient (TC) voltage references in a CMOS standard process is presented. The proposed circuit uses an all CMOS technique to generate a low TC voltage reference over a wide temperature range. A self-biased V th (threshold voltage) generator circuit creates a voltage equal to the V th of a CMOS transistor; this voltage is used to generate a current proportional to V th 2 that, when forced into another transistor, creates a voltage which presents a negative non-linear temperature coefficient. A voltage with a positive TC, which can be controlled by the aspect ratio of a pair of transistors, is generated by a current mirror asymmetrically degenerated with a high-poly resistor. A curvature correction, provided by a current proportional to V th 2 , is used to modify the thermal behaviour of this positive TC voltage. By adding the positive and negative TCs voltages, a very stable reference voltage can be obtained. The circuit was designed to be implemented in a standard CMOS process (AMS 0.35 μ m ), and simulated results indicate that a variation of only 2.5 ppm / ∘ C is expected over the temperature range of 0 – 90 ∘ C ."
}
@article{Bottino20091779,
title = "Low-noise low-power CMOS preamplifier for multisite extracellular neuronal recordings",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1779 - 1787",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002031",
author = "Emanuele Bottino and Paolo Massobrio and Sergio Martinoia and Giacomo Pruzzo and Maurizio Valle",
keywords = "Neuro-electronic interface",
keywords = "Spontaneous electrophysiological activity recording",
keywords = "Integrated low-noise preamplifier",
keywords = "Micro-electrode arrays",
keywords = "Integrated high value resistance",
keywords = "Standard CMOS technology",
abstract = "This paper reports the design and the experimental results of a fully integrated, low-noise, low-power standard CMOS preamplifier circuit used to record the extracellular electrophysiological activity of in vitro biological neuronal cultures. Our goal is to use the preamplifier in a fully integrated, multi-channel, bi-directional neuro-electronic interface.
Among others, two main requirements must be addressed when designing such kind of integrated recording systems: noise performance and very low frequency disturbance rejection. These two requirements need to be satisfied together with a small silicon area design, to be able to integrate a large number of recording channels (i.e. up to thousands) onto a single die. A prototype preamplifier circuit has been designed and implemented; in this paper we report the experimental results.
While satisfying the above requirements, our circuit offers state-of-the-art smallest area occupation (0.13 mm2) and consumes 4.5 μW. Sub-threshold-biased lateral pnp transistors, used to implement very high resistance value integrated resistors, have been characterized to determine the resistance spread.
The fabricated prototype, coupled with a commercial Micro-Electrode Array (MEA), has been successfully employed to record the extracellular electrophysiological spontaneous activity, both of muscular cardiac cells (cardiomyocytes) and of spinal cord neurons from murines."
}
@article{Alaeldine20091788,
title = "A comprehensive simulation model for immunity prediction in integrated circuits with respect to substrate injection",
journal = "Microelectronics Journal",
volume = "40",
number = "12",
pages = "1788 - 1795",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.10.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209002043",
author = "Ali Alaeldine and Richard Perdriau and Ali Haidar",
keywords = "EMC",
keywords = "IC",
keywords = "DPI",
keywords = "Protection techniques",
keywords = "Substrate modelling",
keywords = "Susceptibility modelling",
abstract = "This paper presents a comprehensive modelling methodology for the electromagnetic immunity of integrated circuits (ICs) to direct power injection (DPI). The aim of this study is to predict the susceptibility of ICs by the means of simulations performed on an appropriate electrical model of different integrated logic cores located in the same die. These cores are identical from a functional point of view, but differ by their design strategies. The simulation model includes the whole measurement setup as well as the integrated circuit under test, its environment (PCB, power supply) and the substrate model of each logic core. Simulation results and comparisons with measurement results demonstrate the validity of the suggested model. Moreover, they highlight the interest of the aforementioned protection strategies against electromagnetic disturbances."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "IFC - ",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00188-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001888",
key = "tagkey2009IFC"
}
@article{Anis20091503,
title = "Introduction to the special issue on the 2007 International Conference on Microelectronics",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1503 - ",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001669",
author = "Mohab Anis and Emad Hegazi"
}
@article{Ashry20091504,
title = "A compact low-power UHF RFID tag",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1504 - 1513",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000263",
author = "Ahmed Ashry and Khaled Sharaf and Magdi Ibrahim",
keywords = "RFID",
keywords = "Tag",
keywords = "UHF",
keywords = "Passive",
keywords = "CMOS",
abstract = "In this paper, the design of an ultra-low-power UHF RFID tag is introduced. The system architecture and the communication protocols are chosen to operate with the minimum requirements possible from the RFID tag. By moving most of system functionality to the RFID reader side, the circuit requirements of the RFID tag circuits are relaxed. Supply voltages for both analog and digital parts are chosen carefully for minimum power consumption. The RFID tag is designed in standard digital 0.13 μm CMOS technology. Simulations results of the main blocks are shown. The power consumption of the chip is only 1 μW, and the chip area is only 0.14 mm×0.23 mm."
}
@article{Ng20091514,
title = "A CMOS bandgap reference featuring a 1.5–6 mA output driving current and a Miller-effect startup circuit",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1514 - 1522",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000238",
author = "David C.W. Ng and David K.K. Kwong and Ngai Wong",
keywords = "CMOS bandgap reference",
keywords = "Low voltage",
keywords = "Low power",
keywords = "Startup circuit",
keywords = "Delay circuit",
abstract = "We present a pure CMOS bandgap voltage reference with a low quiescent current and high output current driving capability. The circuit sources a driving current of up to 1.5 mA with the reference voltage kept above 98.5% of its designated 1.2 V, and up to 6 mA before the voltage drops to 90%. The circuit achieves a very low supply current of 13 μ A , a low power of 30 μ W , a line regulation of ± 2.5 mV / V and a load regulation of ± 7 mV / mA . The reference is implemented in a 1 μ m pure CMOS process with V tn ≈ | V tp | ≈ 0.7 V at 25 ∘ C using substrate pnp. A startup circuit, which shuts down itself after a controlled delay using Miller effect, is also introduced. By utilizing the body effect of the input transistors, the turn-on threshold of the startup circuit is raised to about 1 V, making it a perfect match for the reference architecture. Silicon measurements are in good agreement with simulations."
}
@article{Khalil20091523,
title = "SRAM dynamic stability estimation using MPFP and its applications",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1523 - 1530",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000287",
author = "DiaaEldin Khalil and Muhammad Khellah and Nam-Sung Kim and Yehea Ismail and Tanay Karnik and Vivek De",
keywords = "SRAM yield",
keywords = "Dynamic stability",
keywords = "Process variations",
keywords = "Read assist",
keywords = "DVFS",
keywords = "Supply noise effects",
abstract = "In this paper, an accurate approach for estimating the dynamic stability of static random access memory (SRAM) is proposed. The conventional methods of SRAM stability estimation suffer from two major drawbacks: (1) using static failure criteria, such as SNM, which does not capture the transient and dynamic behavior of SRAM operation, and (2) using quasi-Monte-Carlo simulation, which approximates the failure distribution, resulting in large errors at the tails where the desired failure probabilities exist. These drawbacks are eliminated by employing accurate simulation-based dynamic failure criteria along with a new distribution-independent, Most-probable-failure-point search technique for accurate probability calculation. Compared to previously published techniques, the proposed dynamic stability technique offers orders of magnitude improvement in accuracy. Furthermore, the proposed dynamic stability technique enables the correct evaluation of stability in real operation conditions and for different dynamic circuit techniques, such as dynamic write back, where the conventional methods are not applicable."
}
@article{Tawfik20091531,
title = "FinFET domino logic with independent gate keepers",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1531 - 1540",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000251",
author = "Sherif A. Tawfik and Volkan Kursun",
keywords = "Low-power",
keywords = "High-speed",
keywords = "FinFET",
keywords = "Dynamic threshold voltage",
keywords = "Independent-gate bias",
abstract = "Scaling of single-gate MOSFET faces great challenges in the nanometer regime due to the severe short-channel effects that cause an exponential increase in the sub-threshold and gate-oxide leakage currents. Double-gate FinFET technology mitigates these limitations by the excellent control over a thin silicon body by two electrically coupled gates. In this paper a variable threshold voltage keeper circuit technique using independent-gate FinFET technology is proposed for simultaneous power reduction and speed enhancement in domino logic circuits. The threshold voltage of a keeper transistor is dynamically modified during circuit operation to reduce contention current without sacrificing noise immunity. The optimum independent-gate keeper gate bias conditions are identified for achieving maximum savings in delay and power while maintaining identical noise immunity as compared to the standard tied-gate FinFET domino circuits. With the variable threshold voltage double-gate keeper circuit technique the evaluation speed is enhanced by up to 49% and the power consumption is reduced by up to 46% as compared to the standard domino logic circuits designed for similar noise margin in a 32 nm FinFET technology."
}
@article{Hanafi20091541,
title = "A technique for truly linear LC VCO tuning, a proof of concept",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1541 - 1546",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.014",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900024X",
author = "Bassel Hanafi and Emad Hegazi",
keywords = "Differential LC VCO",
keywords = "Tuning curve",
keywords = "Varactor",
abstract = "Based on the understanding of the relation between the shape of the LC VCO tuning curve and the varactor characteristics, a technique using an array of unequal varactors with different bias was found to obtain a truly linear tuning curve. An LC VCO was designed using TSMC 0.13 μm 1.2 V/3.3 V IO process, the VCO frequency varies from 1.9 to 2.7 ghz as its control voltage varies from 0 to 1.2 V. The tuning gain was KVCO=630 MHz/V ±9.5%."
}
@article{Hashemi20091547,
title = "A novel low-drop CMOS active rectifier for RF-powered devices: Experimental results",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1547 - 1554",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.02.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000469",
author = "Saeid Hashemi and Mohamad Sawan and Yvon Savaria",
keywords = "CMOS",
keywords = "Full-wave rectifier",
keywords = "Power efficiency",
keywords = "Smart medical devices",
keywords = "Radio frequency identification (RFID)",
keywords = "Wireless power transfer",
abstract = "We present, in this paper, a new full-wave rectifier topology. It uses MOS transistors as low-loss switches to achieve a significant increase in overall power efficiency and reduced voltage drop. The design does neither require an internal power source nor an auxiliary signal path for power delivery at startup. The highest voltages available in the circuit are used to drive the gates of selected transistors to reduce the leakages and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was characterized with the SpectreS simulator under the Cadence environment and then fabricated using the standard TSMC 0.18 μm CMOS process. The proposed full-wave rectifier is particularly relevant for wirelessly powered applications, such as implantable microelectronic devices (IMD), wireless sensors, and radio frequency identification (RFID) tags. When connected to a sinusoidal source of 3.3 VAC nominal amplitude, it allows improving the power efficiency by 10% and the average output voltage by 16% when compared to other published results."
}
@article{Park20091555,
title = "Wideband LC balun transformer using coupled LC resonators embedded into organic substrate",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1555 - 1560",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.056",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005697",
author = "Jong Cheol Park and Jae Yeong Park",
keywords = "Wideband balun",
keywords = "Coupled LC resonator",
keywords = "SOP",
keywords = "Organic package substrate",
keywords = "High dielectric composite",
keywords = "Embedded high-Q inductor and capacitor",
abstract = "In this paper, wideband LC balun using coupled LC resonator has been newly designed, simulated, and fabricated. The proposed balun has a novel scheme which consists of two pairs of coupled embedded LC resonators which share one resonator with each other. The coupled resonators are applied to provide a precise phase difference of 180° and an identical magnitude between two balanced ports and DC isolation characteristic with impedance transformation. Furthermore, proposed resonators have relatively small inductance values which can be easily embedded into the organic package substrate. In order to reduce the size of embedded capacitors, BTO composite high dielectric film was applied to increase their capacitance densities. The measured results of fabricated wideband balun exhibited an insertion loss of 1.8 dB, a return loss of 10 dB, a phase imbalance of 0.5°, and magnitude imbalance of 0.7 dB at frequency bandwidth of 700 MHz ranged from 1.8 to 2.5 GHz, respectively. They agreed well with the simulated ones. The fabricated balun has a relatively small volume of 2 mm×3.5 mm×0.66 mm (height)."
}
@article{Hafez20091561,
title = "Design of a low-power ZigBee receiver front-end for wireless sensors",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1561 - 1568",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000494",
author = "Amr Amin Hafez and Mohamed Amin Dessouky and Hani Fikri Ragai",
keywords = "Direct conversion",
keywords = "Low power",
keywords = "Low-noise amplifier",
keywords = "Passive mixer",
keywords = "Variable-gain filter",
keywords = "Wireless sensor networks",
keywords = "ZigBee",
abstract = "This paper describes the design of a low cost, low-power ZigBee receiver for wireless sensor networks. The receiver consists of a low-noise amplifier, a pair of down-conversion mixers, and a pair of variable-gain low-pass filters. The LNA has a single-ended input, eliminating the need for an off-chip balun, a differential output, allowing it to drive a double-balanced mixer, and it uses noise cancellation to improve its noise performance. The mixers are double-balanced passive mixers to improve the receiver linearity and decrease its power consumption and flicker noise. Finally, the filter is a third-order Butterworth Gm–C filter with a variable input transconductor to provide gain programmability for the receiver. The design is made using 130 nm CMOS technology with 1.2 V supply. Simulation results show that the receiver can achieve a sensitivity level of −97 dBm while consuming only 6 mA."
}
@article{Sawan20091569,
title = "Introduction to the Special issue on Digital and Mixed-Signal Circuits and Systems",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1569 - 1570",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001864",
author = "Mohamad Sawan and Mounir Boukadoum"
}
@article{García20091571,
title = "CMOS design and analysis of low-voltage signaling methodology for energy efficient on-chip interconnects",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1571 - 1581",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005855",
author = "José C. García and Juan A. Montiel-Nelson and Saeid Nooshabadi",
keywords = "Digital CMOS",
keywords = "Interconnect signaling",
keywords = "Bus drivers",
keywords = "Bus receivers",
keywords = "Level converters",
keywords = "Low energy",
keywords = "Low-voltage",
keywords = "Performance tradeoffs",
abstract = "This paper provides a comparative study of the low-voltage signaling methodologies in terms of delay, energy dissipation, and energy delay product ( energy × delay ) , and sensitivity technology process variations, and noise. We also present the design of two symmetric low-swing driver–receiver pairs for driving signals on the global interconnect lines. The key advantage of the proposed signaling schemes is that they require only one power supply and threshold voltage, hence significantly reducing the design complexity. The proposed signaling schemes were implemented on 1.0 V 0.13 μ m CMOS technology, for signal transmission along a wire-length of 10 mm. When compared with other counterpart symmetric and asymmetric low-swing signaling schemes, the proposed schemes perform better in terms of delay, energy dissipation and energy × delay ."
}
@article{Ngo20091582,
title = "Partitioning and gating technique for low-power multiplication in video processing applications",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1582 - 1589",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000718",
author = "Hau T. Ngo and Vijayan K. Asari",
keywords = "Low-power multiplication",
keywords = "Partitioning and gating",
keywords = "Dynamic power",
keywords = "2D convolution",
keywords = "Switching activities",
abstract = "In this paper, we propose a partitioning and gating technique for the design of a high performance and low-power multiplier for kernel-based operations such as 2D convolution in video processing applications. The proposed technique reduces dynamic power consumption by analyzing the bit patterns in the input data to reduce switching activities. Special values of the pixels in the video streams such as zero, repeated values or repeated bit combinations are detected and data paths in the architecture design are disabled appropriately to eliminate unnecessary switching. Input pixels in the video stream are partitioned into halves to increase the possibility of detecting special values. It is observed that the proposed scheme helps to reduce dynamic power consumption in the 2D convolution operations up to 33%."
}
@article{Turi20091590,
title = "Decreasing energy consumption in address decoders by means of selective precharge schemes",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1590 - 1600",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000706",
author = "Michael A. Turi and José G. Delgado-Frias",
keywords = "Address decoder",
keywords = "High performance",
keywords = "Selective precharge",
keywords = "Sense-amplifier",
abstract = "This paper presents and evaluates three novel memory decoder designs which reduce energy consumption and delay by using selective precharging. These three designs, the AND–NOR, Sense–Amp, and the AND decoder, range in selectivity and select-line swing; these schemes charge and discharge fewer select-lines. This in turn consumes less energy than nonselective address decoders which charge and discharge all select-lines each cycle. These three decoding schemes are comprehensively simulated and compared to the conventional nonselective NOR decoder using 65 nm CMOS technology. Energy, delay, and area calculations are provided for all four 4-to-16 decoders under analysis. The most selective AND decoder performs best and dissipates between 61% and 99% less (73% less on average) and the selective Sense-Amp decoder performs only slightly worse by dissipating between 58% and 75% less (66% less on average) energy than dissipated by the NOR decoder. The AND–NOR decoder dissipates between 15% less and 20% more (6% more on average) energy than dissipated by the NOR decoder. In addition, the AND decoder is 7.5% and the Sense-Amp decoder is 5.0% faster than the NOR decoder, however, the AND–NOR decoder is 1.7% slower than the NOR decoder."
}
@article{Kwon20091601,
title = "Floating-point division and square root using a Taylor-series expansion algorithm",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1601 - 1605",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000500",
author = "Taek-Jun Kwon and Jeffrey Draper",
keywords = "Floating-point unit",
keywords = "Division",
keywords = "Square root",
abstract = "Hardware support for floating-point (FP) arithmetic is a mandatory feature of modern microprocessor design. Although division and square root are relatively infrequent operations in traditional general-purpose applications, they are indispensable and becoming increasingly important in many modern applications. Therefore, overall performance can be greatly affected by the algorithms and the implementations used for designing FP-Div and FP-Sqrt units. In this paper, a single-precision fused floating-point multiply/divide/square root unit based on Taylor-series expansion algorithm is proposed. We extended an existing multiply/divide fused unit to incorporate the square root function with little area and latency overhead since Taylor's theorem enables us to compute approximations for many well-known functions with very similar forms. The implementation results of the proposed fused unit based on standard cell methodology in IBM 90 nm technology exhibits that the incorporation of square root function to an existing multiply/divide unit requires only a modest 18% area increase and the same low latency for divide and square root operation can be achieved (12 cycles). The proposed arithmetic unit exhibits a reasonably good area-performance balance."
}
@article{Jose20091606,
title = "Redundant binary partial product generators for compact accumulation in Booth multipliers",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1606 - 1612",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.005",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900072X",
author = "Bijoy A. Jose and Damu Radhakrishnan",
keywords = "Redundant binary arithmetic",
keywords = "Booth multiplier",
keywords = "Partial product generator",
keywords = "Redundant binary adder",
keywords = "Redundant binary encoding",
abstract = "The use of signed-digit number systems in arithmetic circuits has the advantage of constant time addition. When signed-digit number systems are used in binary, they are referred as redundant binary. Here, we present a new encoding technique for generating redundant binary partial products for a multiplier, without using any additional hardware. We express each normal binary partial product in one's complement form, with an extra bit denoting the sign bit. The proposed redundant binary partial product generator (RBPPG) achieves the highest reduction in the number of partial products (75%) for a radix-4 multiplier. The carry-free nature of redundant binary adders is exploited to add the extra bits with the partial products, without using any extra adder stages. The new partial product generation (PPG) technique is shown to improve the speed of multipliers, with the least number of adder stages, irrespective of the multiplier size."
}
@article{Eisenreich20091613,
title = "A novel ADPLL design using successive approximation frequency control",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1613 - 1622",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005843",
author = "H. Eisenreich and C. Mayr and S. Henker and M. Wickert and R. Schüffny",
keywords = "PLL",
keywords = "ADPLL",
abstract = "This paper presents a hardware implementation of a fully synthesizable, technology-independent clock generator. The design is based on an ADPLL architecture described in VHDL and characterized by a digital controlled oscillator with high frequency resolution and low jitter. Frequency control is done by using a robust regulation algorithm to allow a defined lock-in time of at most eight reference cycles. ASICs in CMOS AMS 0.35 μ m and UMC 0.13 μ m have been manufactured and tested. Measurements show competitive results to state-of-the-art mixed-signal implementations."
}
@article{Hu20091623,
title = "Parallel links with current-mode incremental signaling and per-pin skew compensation",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1623 - 1631",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.043",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005090",
author = "An Hu and Fei Yuan",
keywords = "Parallel links",
keywords = "Inter-signal timing skew",
keywords = "Current-mode circuits",
keywords = "Delay-locked loops",
abstract = "This paper proposes a new inter-signal timing skew compensation technique for parallel links with current-mode incremental signaling. Both the transmitter and receiver of the links are current-mode configured to utilize the intrinsic advantages of current-mode signaling. The receiver maps the direction of its channel currents representing the logic state of the incoming data to two voltages whose values are largely different, enabling a convenient recovery of both the logic state and timing information of the received current-mode data in the voltage-mode domain, and suppression of the common-mode disturbances coupled to the channels. Inter-signal timing skews are compensated by inserting a delay line in each channel whose time delay is determined by the phase difference between the transmitted master clock and the output of the recovering comparator. To assess the effectiveness of the proposed inter-signal timing skew compensation technique, a 2-bit 1 Gbytes/s parallel link has been designed in IBM- 0.13 μ m 1.2 V CMOS technology and analyzed using SpectreRF with BSIM3V3 device models. Simulation results of the parallel link with the proposed deskewing scheme demonstrate that inter-signal timing skews can be effectively compensated using the proposed deskewing scheme."
}
@article{Wu20091632,
title = "Generalized polyphase structure-based Mth-band filter design and application to image interpolation",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1632 - 1641",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.02.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000457",
author = "Chao Wu and Wei-Ping Zhu and M.N.S. Swamy",
keywords = "Polyphase structure",
keywords = "Mth-band filters",
keywords = "FIR filters",
keywords = "Image interpolation",
abstract = "A generalized polyphase (GP) structure-based method for the design of linear-phase Mth-band FIR filters satisfying the time-domain interpolation condition is presented. Some new transform matrices that allow for the use of an arbitrary number of branches in the GP structure are developed. Closed-form frequency specifications for constituent filters of the GP realization are obtained, making an independent and fast design of the short-length constituent filters possible. The proposed GP-based method is then extended for the design of a class of interpolation filters with certain regularities. Some of the interpolation filters designed based on the proposed GP structure are also applied to image resizing. Simulation results show that our interpolation filter gives a superior resized image than the common cubic spline interpolation does."
}
@article{Eberli20091642,
title = "Implementation of a MIMO-OFDM receiver on an application specific processor",
journal = "Microelectronics Journal",
volume = "40",
number = "11",
pages = "1642 - 1649",
year = "2009",
note = "International Conference on Microelectronics Digital and Mixed-Signal Circuits and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.02.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000408",
author = "Stefan Eberli and Andreas Burg and Wolfgang Fichtner",
keywords = "Software defined radio (SDR)",
keywords = "Application specific processor",
keywords = "Reconfigurable processor",
keywords = "DSP",
keywords = "MIMO",
keywords = "OFDM",
abstract = "This paper describes the implementation of the hard computational kernels required for the baseband (BB) processing of a 2 × 2 multiple-input multiple-output (MIMO)-OFDM receiver on a design-framework for application specific processors. The employed low-complexity BB algorithms are described and their computational complexity is derived. The receiver is split into two parts which are mapped onto two application specific processors, each tailored to the computational needs of the associated digital signal processing kernels. The first processor performs the per stream MIMO-OFDM processing. The second processor handles the MIMO detection. Finally, the 0.18 μ m 1P/6M CMOS technology layout of both fabricated application specific processors is presented. Real-time BB processing is possible on these engines running at a clock frequency of 250 MHz."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "IFC - ",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00159-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001591",
key = "tagkey2009IFC"
}
@article{Meganathan20091417,
title = "A systematic design approach for low-power 10-bit 100 MS/s pipelined ADC",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1417 - 1435",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001074",
author = "D. Meganathan and Amrith Sukumaran and M.M. Dinesh Babu and S. Moorthi and R. Deepalakshmi",
keywords = "Analog-to-digital subconverter (ADSC)",
keywords = "Digital-to-analog subconverter (DASC)",
keywords = "Multiplying digital-to-analog converter (MDAC)",
keywords = "Common-mode feedback (CMFB)",
keywords = "Switched capacitor (SC)",
keywords = "Peak-to-peak (p−p)",
keywords = "Signal-to-noise ratio (SNR)",
keywords = "Signal-to-noise-plus-distortion ratio (SNDR)",
keywords = "Total harmonic distortion (THD)",
keywords = "Spurious free dynamic range (SFDR)",
abstract = "A systematic design approach for low-power 10-bit, 100 MS/s pipelined analog-to-digital converter (ADC) is presented. At architectural level various per-stage-resolution are analyzed and most suitable architecture is selected for designing 10-bit, 100 MS/s pipeline ADC. At Circuit level a modified wide-bandwidth and high-gain two-stage operational transconductance amplifier (OTA) proposed in this work is used in track-and-hold amplifier (THA) and multiplying digital-to-analog converter (MDAC) sections, to reduce power consumption and thermal noise contribution by the ADC. The signal swing of the analog functional blocks (THA and MDAC sections) is allowed to exceed the supply voltage (1.8 V), which further increases the dynamic range of the circuit. Charge-sharing comparator is proposed in this work, which reduces the dynamic power dissipation and kickback noise of the comparator circuit. The bootstrap technique and bottom plate sampling technique is employed in THA and MDAC sections to reduce the nonlinearity error associated with the input signal resulting in a signal-to-noise-distortion ratio of 58.72/57.57 dB at 2 MHz/Nyquist frequency, respectively. The maximum differential nonlinearity (DNL) is +0.6167/−0.3151 LSB and the maximum integral nonlinearity (INL) is +0.4271/−0.4712 LSB. The dynamic range of the ADC is 58.72 dB for full-scale input signal at 2 MHz input frequency. The ADC consumes 52.6 mW at 100 MS/s sampling rate. The circuit is implemented using UMC-180 nm digital CMOS technology."
}
@article{Ye20091436,
title = "Design-for-testability techniques for CORDIC design",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1436 - 1440",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001098",
author = "Bo-Yuan Ye and Po-Yu Yeh and Sy-Yen Kuo and Ing-Yi Chen",
keywords = "C-testable",
keywords = "Design-for-testability (DFT)",
keywords = "Iterative logic array (ILA)",
keywords = "Logic testing",
keywords = "Scalability",
keywords = "Coordinate rotation digital computer (CORDIC)",
abstract = "In this paper, we propose two C-testable design-for-testability (DFT) architectures for coordinate rotation digital computer (CORDIC) design. The first design is achieved by using scalable cells. A scalable cell consists of n bit-level cells and has both hardware and bijective scalability. These simple scalable cells establish the relationship between hardware overhead (HO) and number of test patterns (NTP). Both HO and NTP change as n varies. By adjusting the value of n, we can obtain an optimal balance between HO and NTP. Based on these scalable cells, the iterative logic array (ILA) will be still C-testable. For the first proposed design, the HO and NTP for n=2 are 5.37% and 74, respectively. The second one is achieved by the reorganized test sequences, where the HO and NTP are only 3.15% and 18, respectively. The first design can be connected into a non-homogenous ILA for saving lot of test pins and built-in self-test (BIST) area; in the second one, the special properties of the sequences reduce HO/NTP significantly."
}
@article{Navi20091441,
title = "A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1441 - 1448",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001153",
author = "K. Navi and V. Foroutan and M. Rahimi Azghadi and M. Maeen and M. Ebrahimpour and M. Kaveh and O. Kavehei",
keywords = "Low-power Full-adder",
keywords = "Low-power CMOS design",
keywords = "Inverter-based full-adder design",
keywords = "Transmission gate",
abstract = "A new low-power full-adder based on CMOS inverter is presented. This full-adder is comprised of inverters. Universal gates such as NOR, NAND and MAJORITY-NOT gates are implemented with a set of inverters and non-conventional implementation of them. In the proposed design approach the time consuming XOR gates are eliminated. As full-adders are frequently employed in a tree-structured configuration for high-performance arithmetic circuits, a cascaded simulation structure is employed to evaluate the full-adders in a realistic application environment. The circuits being studied were optimized for energy efficiency using 0.18 μm and 90 nm CMOS process technologies. The proposed full-adder shows full swing logic, balanced outputs and strong output drivability. It is also observed that the presented design can be utilized in many cases especially whenever the lowest possible power consumption is targeted. Circuits layout implementations and checking their functionality have been done using Cadence IC package and Synopsys HSpice, respectively."
}
@article{Zhang20091449,
title = "FIR filter optimization using bit-edge equalization in high-speed backplane data transmission",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1449 - 1457",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001165",
author = "Lei Zhang and Tadeusz Kwasniewski",
keywords = "Equalizers",
keywords = "Intersymbol interference (ISI)",
keywords = "Jitter",
keywords = "Least-mean-square methods (LMS)",
keywords = "Pulse amplitude modulation (PAM)",
abstract = "A unique bit-edge equalization (BEE) method for mitigating intersymbol interference (ISI) in high-speed backplane applications is presented. Using a least-mean-square (LMS) adaptive algorithm as a receiver (RX) error convergence engine, the proposed BEE method aims to optimize the bit-edge amplitudes by equalizing only the edges of data bits with an adjustment of the sampling points where the error information is collected. This adjustment of sampling points in turn changes the error information and affects filter coefficients for pulse amplitude modulation. As a result, the channel's far-end 3-level bit-edge eye diagrams can be optimized. This proposed BEE method employs transmitter (TX) pre-coding in conjunction with TX pre-emphasis using a symbol-spaced FIR (SSF) filter. In this work, a detailed analytical comparison of the proposed BEE transceiver architecture with the conventional NRZ bit-centre equalization (BCE) and duobinary transceiver architectures is presented. The simulation results demonstrate that at 10+ Gbps data rates, the proposed BEE is the most effective method for mitigating ISI in relatively high-loss channels."
}
@article{Huang20091458,
title = "A 30 pA/V– linear CMOS channel-length-modulation OTA",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1458 - 1465",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001256",
author = "Yan Huang and Emmanuel M. Drakakis and Chris Toumazou",
keywords = "CMOS",
keywords = "Operational transconductance amplifier",
keywords = "Channel length modulation",
keywords = "Wide tuning range",
keywords = "VCO",
abstract = "A fully balanced highly linear CMOS operational transconductance amplifier (OTA) is presented. The proposed circuit combines a cross-coupled channel length modulation cell with a tunable-gain current mirror. Good linearity over a wide tuning range is achieved. As an example, the OTA has been used in designing a second-order tunable VCO. Both the OTA and the VCO have been fabricated in the AMS 0.35 μ m CMOS process. Measured results show that the transconductance of the OTA ranges from 30 pA/V to 25 μ A / V , and the VCO achieves a tuning range from 6 Hz to 180 kHz."
}
@article{daSilva20091466,
title = "CMOS voltage-mode quaternary look-up tables for multi-valued FPGAs",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1466 - 1470",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001268",
author = "R.C.G. da Silva and C. Lazzari and H. Boudinov and L. Carro",
keywords = "Quaternary logic",
keywords = "Low power circuits",
keywords = "Reconfigurable circuits",
keywords = "Circuits for future technologies",
abstract = "Field programmable gate arrays usage has been growing steadily for years now. Their popularity stems from the fact that they can be reprogrammed to implement any function, with any amount of parallelism. Unfortunately, exactly due to their flexibility, FPGAs require a huge amount of resources, in the form of LUTs and routing switches, and these can take up to 90% of the chip area. In this paper we present the development of a low-power full CMOS multiple-valued logic to build a LUT for FPGAs. Several circuits are mapped to quaternary LUTs and compared to their binary counterpart. Results show great improvements in terms of area and power consumption. Moreover, we show the positive impact of the proposed architecture in the global reduction of routing switches and wiring, and hence in the total FPGA area."
}
@article{Gorgin20091471,
title = "A fully redundant decimal adder and its application in parallel decimal multipliers",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1471 - 1481",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001281",
author = "Saeid Gorgin and Ghassem Jaberipur",
keywords = "Decimal digit sets",
keywords = "Carry-free decimal addition",
keywords = "Redundant number systems",
keywords = "Decimal parallel multiplication",
keywords = "Weighted bit-set encoding",
abstract = "Decimal hardware arithmetic units have recently regained popularity, as there is now a high demand for high performance decimal arithmetic. We propose a novel method for carry-free addition of decimal numbers, where each equally weighted decimal digit pair of the two operands is partitioned into two weighted bit-sets. The arithmetic values of these bit-sets are evaluated, in parallel, for fast computation of the transfer digit and interim sum. In the proposed fully redundant adder (VS semi-redundant ones such as decimal carry-save adders) both operands and sum are redundant decimal numbers with overloaded decimal digit set [0, 15]. This adder is shown to improve upon the latest high performance similar works and outperform all the previous alike adders. However, there is a drawback that the adder logic cannot be efficiently adapted for subtraction. Nevertheless, this adder and its restricted-input varieties are shown to efficiently fit in the design of a parallel decimal multiplier. The two-to-one partial product reduction ratio that is attained via the proposed adder has lead to a VLSI-friendly recursive partial product reduction tree. Two alternative architectures for decimal multipliers are presented; one is slower, but area-improved, and the other one consumes more area, but is delay-improved. However, both are faster in comparison with previously reported parallel decimal multipliers. The area and latency comparisons are based on logical effort analysis under the same assumptions for all the evaluated adders and multipliers. Moreover, performance correctness of all the adders is checked via running exhaustive tests on the corresponding VHDL codes. For more reliable evaluation, we report the result of synthesizing these adders by Synopsys Design Compiler using TSMC 0.13 μm standard CMOS process under various time constrains."
}
@article{Hu20091482,
title = "A fast general slew constrained minimum cost buffering algorithm",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1482 - 1486",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001293",
author = "Shiyan Hu and Jiang Hu",
keywords = "Buffer insertion",
keywords = "Slew constraint",
keywords = "Non-fixed input slew",
keywords = "Interconnect optimization",
keywords = "Physical design",
abstract = "As VLSI technology moves to the nanoscale regime, ultra-fast slew buffering techniques considering buffer cost minimization are highly desirable. The existing technique proposed in [S. Hu, C. Alpert, J. Hu, S. Karandikar, Z. Li, W. Shi, C.-N. Sze, Fast algorithms for slew constrained minimum cost buffering, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 26 (11) (2007) 2009–2022] is able to efficiently perform buffer insertion with a simplified assumption on buffer input slew. However, when handling more general cases without input slew assumptions, it becomes slow despite the significant buffer savings. In this paper, a fast buffering technique is proposed to handle the general slew buffering problem. Instead of building solutions from scratch, the new technique efficiently optimizes buffering solutions obtained with the fixed input slew assumption. Experiments on industrial nets demonstrate that our algorithm is highly efficient. Compared to the commonly used van Ginneken style buffering, up to 49 × speed up is obtained and often 10% buffer area is saved. Compared to the algorithm without input slew assumption proposed in [S. Hu, C. Alpert, J. Hu, S. Karandikar, Z. Li, W. Shi, C.-N. Sze, Fast algorithms for slew constrained minimum cost buffering, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 26 (11) (2007) 2009–2022], up to 37 × speedup can be obtained with slight sacrifice in solution quality."
}
@article{MoghaddamTabrizi20091487,
title = "Low-power and high-performance techniques in global interconnect signaling",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1487 - 1495",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900130X",
author = "Mohammad Moghaddam Tabrizi and Nasser Masoumi",
keywords = "Global interconnect",
keywords = "Current-mode signaling",
abstract = "In this article, two accurate and efficient approaches are proposed to optimize the power and delay of global interconnects in VLSI ICs. We modify the conventional buffer insertion and low swing methods for delay and power optimization of various lengths of the global interconnects. As such, we address non-equidistance buffer insertion (NEBI) and current-mode driver and receiver (CMDR) techniques along with our smart optimization procedure. It is shown that the optimized low swing CMDR technique is efficient for global interconnects of the length equal or longer than 5 mm, and the improved buffer insertion technique, NEBI, is a perfect choice for the short global interconnects. Additionally, a random search algorithm known as simulated annealing (SA), improved by an intelligent method using a piecewise linear and exponential cost function, is employed for optimization of the power and delay. To this end, we have implemented a smart CAD tool that works interactively with HSPICE to achieve accurate and reliable design results. For verification purposes, several circuits are designed and simulated in 0.25, 0.18, and 0.13 μm CMOS technologies. The simulation results verify a significant reduction in the power and delay of global interconnects compared to other methods in the literature."
}
@article{Chen20091496,
title = "A wide dynamic range CMOS image sensor with pulse-frequency-modulation and in-pixel amplification",
journal = "Microelectronics Journal",
volume = "40",
number = "10",
pages = "1496 - 1501",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001311",
author = "Yong Chen and Fei Yuan and Gul Khan",
keywords = "CMOS digital pixel sensor",
keywords = "CMOS integrated circuits",
abstract = "This paper briefly examines the pros and cons of CMOS pulse-frequency-modulation (PFM) digital pixel sensors. A pulse-frequency-modulation digital pixel sensor with in-pixel amplification is proposed to improve the resolution of the pixel sensor at low illumination. The proposed PFM digital pixel sensor offers the characteristics of a reduced integration time when the level of illumination is low with the fill factor comparable to that of PFM digital pixel sensors without in-pixel amplification. The proposed digital image sensor has been designed in TSMC- 0.18 μ m 1.8 V CMOS technology and validated using Spectre from Cadence Design Systems with BSIM3V3 device models. Simulation results demonstrate that the dynamic range of the proposed PFM digital pixel sensor with in-pixel amplification is 20 dB larger as compared with that of PFM digital pixel sensors without in-pixel amplification. The increased dynamic range is obtained in the low illumination condition where PFM digital pixel sensors without in-pixel amplification cease the operation due to the low photo current."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "IFC - ",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00134-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001347",
key = "tagkey2009IFC"
}
@article{Daniela20091255,
title = "Guest editorial",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1255 - 1256",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004667",
author = "Daniela and De Venuto"
}
@article{Laknaur20091257,
title = "Design of a window comparator with adaptive error threshold for online testing applications",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1257 - 1263",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.093",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001626",
author = "Amit Laknaur and Rui Xiao and Sai Durbha and Haibo Wang",
keywords = "Window comparator",
keywords = "Analog testing",
abstract = "This paper presents a novel window comparator circuit whose error threshold adjusts adaptively with respect to its input signal levels. Advantages of adaptive error thresholds over constant or relative error thresholds in analog testing applications are discussed. Analytical equations for guiding the design of the comparator circuitry are derived. The proposed comparator circuit has been designed and fabricated using a CMOS 0.18 μ m technology. Measurement results of the fabricated chip are presented."
}
@article{Balijepalli20091264,
title = "Compact modeling of a PD SOI MESFET for wide temperature designs",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1264 - 1273",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.03.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001742",
author = "A. Balijepalli and J. Ervin and W. Lepkowski and Y. Cao and T.J. Thornton",
keywords = "Silicon-on-insulator",
keywords = "MESFETs",
keywords = "SPICE model",
keywords = "TOM3 capacitance model",
keywords = "Verilog-A",
abstract = "A compact model for the partially depleted (PD) silicon-on-insulator (SOI) metal semiconductor field effect transistor (MESFET) is presented. The absence of a gate-oxide makes the SOI MESFET extremely robust, able to withstand high voltages, and useful for extreme environment electronics. These devices have been fabricated using a standard SOI CMOS process. In contrast to SOI MOSFETs and GaAs MESFETs, the source–substrate voltage has a significant impact on the channel current. In this work a model has been developed that includes the effect of the buried oxide on the performance of the MESFET. The model has been verified for a wide temperature range of −180 to 150 °C. A behavioral model has been included to model the breakdown voltage. The core DC and RF models have been adapted from the commercially available Triquint's Own Model (TOM3) MESFET model. Building from the TOM3 model, a measurement-based approach is used to develop a four-terminal compact model using Verilog-A. The charge-based approach, using S-parameter measurements was used to develop the capacitance model. We also present a voltage reference circuit using two MESFET transistors to verify the model and explore wide temperature range circuit applications."
}
@article{Dubois20091274,
title = "Modelling of hot-carrier degradation and its application for analog design for reliability",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1274 - 1280",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.03.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001754",
author = "Benoit Dubois and Jean-Baptiste Kammerer and Luc Hébrard and Francis Braun",
keywords = "Hot-carrier",
keywords = "MOS ageing model",
keywords = "Analog design",
keywords = "Reliability",
abstract = "An analytical CMOS transistor ageing model is presented and a new procedure that allows the extraction of its parameters are presented in this paper. Then, we show how this model can be used to forecast and understand the drifts of the main characteristics of a CMOS circuit. Further, we demonstrate that this model can also be used to help the analog designer to choose and/or modify a circuit in order to minimise the hot-carrier induced degradations. Finally, we use an ageing simulation tool realised in VHDL-AMS to validate the analytical study, and we present our first experimental results."
}
@article{MartinezBrito20091281,
title = "A DC offset and CMRR analysis in a CMOS 0.35 μm operational transconductance amplifier using Pelgrom's area/accuracy tradeoff",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1281 - 1292",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.02.029",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001663",
author = "Juan Pablo Martinez Brito and Sergio Bampi",
keywords = "CMOS differential operational amplifier",
keywords = "MOSFET mismatch modeling",
keywords = "Offset",
keywords = "CMRR",
keywords = "Common-mode gain",
keywords = "Differential gain",
abstract = "Nonideal factors which play a key role in performance and yield in high-precision operational amplifiers are rigorously investigated. Expressions for the offset voltage (Vos) and the common-mode rejection ratio (CMRR) are derived and correlated. The mismatch accuracy is analyzed for different transistor geometries in a CMOS OTA (operational transconductance amplifier) in 0.35 μm technology by using the Monte Carlo approach."
}
@article{DeVenuto20091293,
title = "Fault diagnosis and test of DNA sensor arrays by using IFA approach",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1293 - 1299",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000086",
author = "Daniela De Venuto and Bruno Riccò",
keywords = "Sensor array for DNA detection",
keywords = "Fault modeling",
keywords = "Fault diagnosis",
keywords = "Inductive fault analysis",
abstract = "This paper presents a fault analysis applied to a novel optical, label-free sensors array for DNA detection. The inductive fault analysis approach to extract and model the possible defects has been used. A critical equivalent resistance for the possible faults has been defined and it allowed defining the threshold values of current to discriminate the occurrence of the failures mechanisms. Particularly critical is the shorts occurrence: in this failure mode the current changes can generate a wrong information that can be confused with the current reduction due to DNA detection. At the end a test strategy for structural test is proposed."
}
@article{Bruschi20091300,
title = "Postprocessing, readout and packaging methods for integrated gas flow sensors",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1300 - 1307",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.009",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800462X",
author = "P. Bruschi and M. Piotto and N. Bacci",
keywords = "Thermal flow sensor",
keywords = "Packaging",
keywords = "Micromachining",
abstract = "Two different architectures of integrated thermal flow meters based on a differential temperature configuration are investigated. A standard structure made up of a heater placed between two temperature probes has been compared to a recently proposed variant equipped with a double heater. The latter has shown a different dependence of the response on gas type when driven in a closed loop fashion. The possibility of using this architecture to compensate the intrinsic sensor offset has also been proposed. Devices have been fabricated by means of a simple and low cost postprocessing technique applied to chips fabricated with two distinct commercial processes. Postprocessing variants, imposed by the sophistication of modern processes, have been proposed and discussed. A compact gas flow sensor with the readout electronics integrated on the same chip has been fabricated and characterized. Experimental results on this device and new data on double heater structures have been discussed and compared with the reviewed data of previously presented devices."
}
@article{Fort20091308,
title = "A two electrode C–NiO Nafion amperometric sensor for NO2 detection",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1308 - 1312",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004606",
author = "A. Fort and C. Lotti and M. Mugnaini and R. Palombari and S. Rocchi and V. Vignoli",
keywords = "NO2 sensing",
keywords = "Electrochemical sensors",
keywords = "Gas sensing",
abstract = "In this paper, the authors propose a new and simple Nafion-based NO2 amperometric sensor, a dedicated measurement system, and a measurement protocol. The system has a linear response to NO2 concentration, and a sensitivity up to 90 nA/ppm. Moreover, the developed sensor shows a satisfactory repeatability and a low cross-sensitivity to common interfering gases such as CO and oxygen."
}
@article{Yazicioglu20091313,
title = "Ultra-low-power biopotential interfaces and their applications in wearable and implantable systems",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1313 - 1321",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.015",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800459X",
author = "Refet Firat Yazicioglu and Tom Torfs and Patrick Merken and Julien Penders and Vladimir Leonov and Robert Puers and Bert Gyselinckx and Chris Van Hoof",
keywords = "Biopotential",
keywords = "EEG",
keywords = "ECG",
keywords = "EMG",
keywords = "Readout circuit",
keywords = "Chopper stabilization",
keywords = "Instrumentation amplifier",
keywords = "Readout circuit",
keywords = "Acquisition system",
keywords = "VEMP",
keywords = "AC-coupled chopper stabilization",
keywords = "Thermoelectric generator",
abstract = "Traditionally the monitoring of the biopotential signals are only limited to clinical applications. On the other hand, there is a growing demand for these biopotential signals to be used in non-clinical applications in order to improve the quality of life and enable the interaction between humans and machines. However, such non-clinical applications of biopotential signal monitoring requires various improvements not only in terms of size and comfort of the biopotential acquisition systems, but also in terms of their power dissipation. An important building block of the biopotential acquisition systems is the front-end circuitry that defines the quality of the extracted signals and unfortunately consumes unacceptable power, when the currently available circuitry is considered. Therefore, this paper focuses on the advances in low-power and high-performance readout circuit design for the acquisition of biopotential signals. In addition, several application examples will be demonstrated, which proves that the realization of high-performance and low-power readout circuits can actually enable the implementation of miniaturized and comfortable biopotential acquisition systems extending the usage of such systems towards non-clinical applications."
}
@article{Flammini20091322,
title = "Wired and wireless sensor networks for industrial applications",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1322 - 1336",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004618",
author = "Alessandra Flammini and Paolo Ferrari and Daniele Marioli and Emiliano Sisinni and Andrea Taroni",
keywords = "Sensor network",
keywords = "Smart sensor",
keywords = "Wireless communication",
keywords = "Real-time system",
abstract = "Distributed architectures for industrial applications are a new opportunity to realize cost-effective, flexible, scalable and reliable systems. Direct interfacing of sensors and actuators to the industrial communication network improves the system performance, because process data and diagnostics can be simultaneously available to many systems and also shared on the Web.
However, sensors, especially low-cost ones, cannot use standard communication protocols suitable for computers and PLCs. In fact, sensors typically require a cyclic, isochronous and hard real-time exchange of few data, whereas PCs and PLCs exchange a large amount of data with soft real-time constrains. Looking at the industrial communication systems, this separation is clearly visible: several fieldbuses have been designed for specific sensor application areas, whereas high-level industrial equipments use wired/wireless Ethernet and Internet technologies.
Recently, traditional fieldbuses were replaced by Real-Time Ethernet protocols, which are “extended” versions of Ethernet that meet real-time operation requirements. Besides, real-time wireless sensor networking seems promising, as demonstrated by the growing research activities.
In this paper, an overview of the state-of-art of real-time sensor networks for industrial applications is presented. Particular attention has been paid to the description of methods and instrumentation for performance measurement in this kind of architectures."
}
@article{Brunelli20091337,
title = "Photovoltaic scavenging systems: Modeling and optimization",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1337 - 1344",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004631",
author = "D. Brunelli and D. Dondi and A. Bertacchini and L. Larcher and P. Pavan and L. Benini",
keywords = "Photovoltaic systems",
keywords = "Energy harvesting",
keywords = "Modeling",
keywords = "Wireless sensor networks",
abstract = "The interest in embedded portable systems and wireless sensor networks (WSNs) that scavenge energy from the environment has been increasing over the last years. Thanks to the progress in the design of low-power circuits, such devices consume less and less power and are promising candidates to perform continued operation by the use of renewable energy sources. The adoption of maximum power point tracking (MPPT) techniques in photovoltaic scavengers increases the energy harvesting efficiency and leads to several benefits such as the possibility to shrink the size of photovoltaic modules and energy reservoirs. Unfortunately, the optimization of this process under non-stationary light conditions is still a key design challenge and the development of a photovoltaic harvester has to be preceded by extensive simulations. We propose a detailed model of the solar cell that predicts the instantaneous power collected by the panel and improves the simulation of harvester systems. Furthermore, the paper focuses on a methodology for optimizing the design of MPPT solar harvesters for self-powered embedded systems and presents improvements in the circuit architecture with respect to our previous implementation. Experimental results show that the proposed design guidelines allow to increment global efficiency and to reduce the power consumption of the scavenger."
}
@article{Lanzoni20091345,
title = "Smart sensors for fast biological analysis",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1345 - 1349",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004436",
author = "Massimo Lanzoni and Claudio Stagni and Bruno Riccò",
keywords = "DNA",
keywords = "Instrumentation",
keywords = "EEPROM",
abstract = "This paper presents an updated overview of present works concerning the realization of biological sensors based on electronic devices. In particular, DNA sensors will be described and their main characteristics will be analyzed. As an example, a new sensor for DNA detection and analysis will be described in detail. The proposed approach is based on the use of non-volatile memories and does not require sample treatment nor sensor surface functionalization. Moreover, fabrication technology is widely compatible with the standard CMOS process. Experimental results show that the sensor has sufficient accuracy and sensitivity that can be further improved by suitable device engineering."
}
@article{Ohletz20091350,
title = "Design, qualification and production of integrated sensor interface circuits for high-quality automotive applications",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1350 - 1357",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004643",
author = "M.J. Ohletz and F. Schulze",
keywords = "Automotive design",
keywords = "Sensor signal conditioning",
keywords = "AEC Q-100",
keywords = "DPAT",
keywords = "ESD",
keywords = "EMC",
keywords = "Sensor interface",
keywords = "Testing",
keywords = "Built-in quality",
abstract = "The product development of integrated sensor interface circuits for automotive applications requires various additional features accounting for the harsh environment in automotive applications. Unlike in a pure prototype development yield is key to achieve the required automotive quality targets of zero ppm. The paper first describes the general automotive requirements like electro-static discharge (ESD) and reverse polarity protection. Then the design flow from specification until start of production for an industrial product development is outlined. Finally, the requirements for automotive circuits qualification based upon the international standard AEC Q-100 are described. Furthermore, the automotive test requirement and additional measures such as the dynamic part average testing and statistical bin analysis are discussed to achieve at zero ppm quality. The paper includes a real product example of ZMD."
}
@article{DeVenuto20091358,
title = "Design of an integrated low-noise read-out system for DNA capacitive sensors",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1358 - 1365",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.071",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004448",
author = "Daniela De Venuto and Sandro Carrara and Bruno Riccò",
keywords = "DNA biosensor read-out",
keywords = "Charge-sensitive front-end",
keywords = "Differential read-out system",
keywords = "Low-noise read-out.",
abstract = "This paper presents an electronic system for a fast DNA label-less detection. The sensitivity of the capacitive sensor in use is improved by depositing an insulating self-assembled monolayer (SAM) over the golden electrodes. The capacitance shift due to the hybridization effect is monitored by means of a charge-sensitive amplifier and digitalized by means of a comparator and a counter. The read-out solution demonstrates the ability to identify a 0.01% variation on the capacitive value of the sensor. Results from measurements with the optimized sensor show the reliability of the electronics. The investigated solution is suitable for monolithic systems or for a micro-fabricated array of sensors. An example of the integrated front-end is described and performances and noise evaluation are reported here."
}
@article{Márta20091366,
title = "Thermal investigations of integrated circuits in systems at THERMINIC’07",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1366 - ",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004679",
author = "Márta and Rencz"
}
@article{Grauby20091367,
title = "Joule expansion imaging techniques on microlectronic devices",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1367 - 1372",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002012",
author = "Stéphane Grauby and Luis-David Patino Lopez and Amine Salhi and Etienne Puyoo and Jean-Michel Rampnoux and Wilfrid Claeys and Stefan Dilhaire",
keywords = "Microelectronic devices",
keywords = "Temperature variations",
keywords = "Joule expansion",
keywords = "Displacement",
abstract = "We have studied the electrically induced off-plane surface displacement on two microelectronic devices using scanning Joule expansion microscopy (SJEM). We present the experimental method and surface displacement results. We show that they can be successfully compared with surface displacement images obtained using an optical interferometry method. We also present thermal images using scanning thermal microscopy (SThM) technique to underline that SJEM is more adapted to higher frequency measurements. The performances of the three methods are compared."
}
@article{Pierściński20091373,
title = "Quantification of thermoreflectance temperature measurements in high-power semiconductor devices—lasers and laser bars",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1373 - 1378",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002061",
author = "K. Pierściński and D. Pierścińska and M. Bugajski",
keywords = "Thermoreflectance spectroscopy",
keywords = "Temperature measurements",
keywords = "Semiconductor lasers",
abstract = "In this paper we present results of the analysis of the thermoreflectance (TR) measurements performed on the high-power laser diodes and laser bar emitting at 808 nm. TR is a modulation technique relying on periodic facet temperature modulation induced by pulsed current supply of the laser. The periodic temperature change of the laser induces variation of the refractive index and consequently modulates probe beam reflectivity. Spatially resolved TR spectroscopy is applied to measure line-scans and maps of temperature distribution at the laser mirrors and emitter facets in laser bar. However, to get the absolute values of temperatures, TR needs calibration. Different calibration methods, such as μ-Raman spectroscopy and in situ determination of TR coefficient (CTR), will be discussed. The knowledge of temperature distribution at laser facets gives insight into thermal processes occurring at devices’ facets and consequently leads to the increased reliability and substantially longer lifetimes of such structures."
}
@article{Smith20091379,
title = "Comparison of transient and static test methods for chip-to-sink thermal interface characterization",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1379 - 1386",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.079",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003145",
author = "B. Smith and T. Brunschwiler and B. Michel",
keywords = "Thermal interface material",
keywords = "Transient thermal test",
keywords = "Electronics cooling",
keywords = "TIM",
keywords = "Interface characterization",
keywords = "Structure function",
abstract = "Accurate thermal interface characterization is essential for high flux microelectronic package design. However, it is increasingly difficult as interfacial bond lines are thinned and thermal interface materials (TIM) evolve to more complex formulations with better performance. This paper compares a static versus transient characterization method targeted at the chip-to-package interface in a test fixture that closely resembles a packaged chip. The static method requires measurements over multiple bond line thicknesses while the transient method yields additional information about the package at the cost of greater numerical complexity, hardware requirements, sensitivity to noise and experimental uncertainty. Both are compared with existing techniques. We conclude that the static method is more generally-applicable while transient is well-suited to rapid characterization of the interface when the rest of the package is well-defined. While both methods are sensitive to the accuracy and resolution of temperature and bondline thickness measurements, the transient technique is additionally sensitive to the relative contribution of the TIM in the full junction-to-ambient thermal path. These points are illustrated through experimental results and compact numerical modeling."
}
@article{Petropoulos20091387,
title = "A novel system for displacement sensing, integrated on a plastic substrate",
journal = "Microelectronics Journal",
volume = "40",
number = "9",
pages = "1387 - 1392",
year = "2009",
note = "Quality in Electronic Design 2nd IEEE International Workshop on Advances in Sensors and Interfaces Thermal Investigations of ICs and Systems",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001936",
author = "A. Petropoulos and G. Kaltsas and D. Goustouridis",
keywords = "Thermal MEMS",
keywords = "Position sensor",
keywords = "PCB",
keywords = "Temperature sensing",
abstract = "A micro system utilizing a novel sensing principle is presented in this paper. The determination of position is performed by exploiting the heat transfer between a heating source and a sensing device. The device itself consists of an array of temperature sensing elements, fabricated entirely on a plastic substrate. A specific fabrication technology was implemented which allows direct integration with read-out electronics and communication to the macro-world without the use of wire bonding. The fabricated sensing elements are temperature sensitive Pt thermistors. The device is able to detect both the position and the motion of a heating source by monitoring the induced resistance variation on the thermistor array. The heating source which performs a one-dimensional motion in a parallel plane to the temperature sensing array can be any element that can provide a highly localized temperature field. The system operation was characterized under both steady-state and dynamic conditions. In steady state mode the sensor exhibits a resolution of ±50 μm, while in dynamic conditions the device can detect signal frequencies up to 10 Hz."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "IFC - ",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00119-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001190",
key = "tagkey2009IFC"
}
@article{Gassoumi20091161,
title = "Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1161 - 1165",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.02.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000444",
author = "M. Gassoumi and J.M. Bluet and C. Gaquière and G. Guillot and H. Maaref",
keywords = "AlGaN/GaN",
keywords = "Sic substrate",
keywords = "HEMT",
keywords = "CDLTS",
keywords = "Deep levels",
keywords = "2DEG and hole-like",
abstract = "Deep levels in AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrate are known to be responsible for trapping processes like: threshold voltage shift, leakage current, degradation current, kink effect and hysteresis effect. The related deep levels are directly characterized by conductance deep level transient spectroscopy (CDLTS) method. Hereby, we have detected five carrier traps with activation energy ranging from 0.84 to 0.07 eV. In this study, we have revealed the presence of two hole-like traps (HL1 and HL2) observed for the first time by CDLTS with activations energy of 0.40 and 0.84 eV. The localisation and the identification of these traps are presented. Finally, the correlation between the anomalies observed on output and defects is discussed."
}
@article{Zhang20091166,
title = "Electron translocation and field emission in printed CNT film by high-temperature sintering and post-treatment",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1166 - 1169",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.073",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002467",
author = "Xiu-Xia Zhang and Chang-Chun Zhu",
keywords = "Electron tunneling",
keywords = "Carbon nanotube film",
keywords = "Field emission",
keywords = "Screen print",
keywords = "Sintering",
keywords = "Post-treatment",
abstract = "The main problem of printed carbon nanotube film (CNTF) is that emitters do not have distributed uniformity. CNT was buried in leftover binding materials, which needs to be removed by fitted sintering and post-treatment. A new paste for printed CNTF was developed. Tunneling coefficients of leftover potential barrier were calculated respectively by the numerical method. The electrons translocation results through potential barrier between CNTs in calculated CNTF were tested by an experiment. A novel post-treatment, including high-temperature sintering and mechanical shearing and blowing, was performed to evidently improve the electron translocation and field emission current density of CNTF. Excellent emission prosperities were exhibited: stable current density, distributed uniformity emitters and long lifetime. The treatment of high-temperature sintering and mechanical shearing and blowing, may be an important prerequisite for future field emission display."
}
@article{Ip20091170,
title = "A 19 nW analogue CMOS log-domain 6th-order Bessel filter without E-minus cells",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1170 - 1174",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000226",
author = "Henry Man D. Ip and Emmanuel Mic. Drakakis and Anil A. Bharath",
keywords = "Analog signal processing",
keywords = "Bernoulli cell",
keywords = "CMOS log-domain",
keywords = "Bessel filter",
abstract = "This paper contributes to the field of low-power high-order CMOS log-domain filters by: (a) suggesting a log-domain synthesis path which bypasses the need for E-minus cells and (b) by assessing the practicality of the proposed synthesis path by means of a 6th-order CMOS log-domain Bessel filter fabricated in the commercially available AMS 0.35 μm process. Measured results from the 19 nW, 8–200 Hz, 940 μm2 Bessel filter chip confirm the validity of the proposed approach. The filter reported here is particularly useful for biomedical instruments such as portable ECG devices and Pulse-oximeters."
}
@article{Gubelmann20091175,
title = "High-efficiency dynamic supply CMOS audio power amplifier for low-power applications",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1175 - 1183",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000482",
author = "J. Gubelmann and P.A. Dal Fabbro and M. Pastre and M. Kayal",
keywords = "Audio power amplifier",
keywords = "CMOS integrated circuit",
keywords = "Low power",
keywords = "Efficiency enhancement",
keywords = "Adaptive polarization",
abstract = "This paper describes the analysis and design of a dynamic supply CMOS audio power amplifier for low-power applications. The dynamic supply technique is used to increase the efficiency of a class AB power amplifier. The polarization of its output stage is adaptive so that the maximum efficiency enhancement can be achieved without jeopardizing the linearity of the system. Two types of adaptive polarization are proposed and compared. A concept of power supplies switching is also proposed. Simulation results are presented showing that an efficiency of 53.6% at a total harmonic distortion (THD) of less than 0.1% can be achieved, whereas the maximal theoretical value for a class AB amplifier is approximately 33.3%."
}
@article{Lo20091184,
title = "Current-controllable monostable multivibrator with retriggerable function",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1184 - 1191",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.03.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000731",
author = "Yu-Kang Lo and Hung-Chun Chien",
keywords = "Current-controllable",
keywords = "Monostable multivibrator",
keywords = "Operational transconductance amplifier",
keywords = "Retriggerable",
abstract = "This paper presents a novel current-controllable monostable multivibrator, which is composed of three operational transconductance amplifiers (OTAs), two grounded resistors, and one grounded capacitor. The pulse width and height of the output signal can be adjusted through the bias currents of OTAs and external resistors. In addition, this new monostable circuit features a retriggerable function that can efficiently overcome the problem of the recovery time. The proposed retriggerable monostable multivibrator including the parasitics and slew rate (SR) effect is analyzed in detail. A prototype circuit is built to conduct tests. Experimental results are shown to confirm the theoretical analysis. The presented current-controllable monostable circuits displays good linearities of current-to-pulse width and current-to-pulse height. Also the temperature stabilities are acceptable."
}
@article{Su20091192,
title = "Broadband circularly polarized CPW-fed slot antenna array for millimeter wave application",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1192 - 1195",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.04.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000743",
author = "Zhi Juan Su and Gui Fu Ding and Wen Jing Lu and Wei qiang Chen",
keywords = "Antenna array",
keywords = "Millimeter wave antenna",
keywords = "Coplanar waveguide",
keywords = "Circular polarization",
abstract = "A broadband and circularly polarized 1×4 linear antenna array composed of CPW-fed slot elements for millimeter wave application is discussed. Through a special short-circuiting stub perturbation method, the circular ring slot element achieves circular polarization and a broad bandwidth. Through a parallel feeding network, the array achieves a broad impedance bandwidth of 19% with VSWR⩽2 and CP bandwidth of 18.4% with AR⩽3 dB and has a peak gain of about 6.8 dB."
}
@article{Yang20091196,
title = "A simple prediction method for composite rectangular microcantilevers with equal width and the dimensional optimization",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1196 - 1201",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.04.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000755",
author = "Kai Yang and Zhigang Li and Yupeng Jing and Dapeng Chen and Tianchun Ye",
keywords = "CRMEW",
keywords = "Resonant frequency",
keywords = "Equivalent model method",
abstract = "Resonant frequency is a key parameter in designing a resonant transducer with high sensitivity. Eigen-frequency calculation of a composite-layer microcantilever is quite useful for the design of a microcantilever resonant sensor. However, simple methods for predicting the resonant frequency of composite rectangular microcantilevers are poorly developed and invite further research. This paper presents a simple and accurate analytical method called “equivalent model method” to predict the fundamental resonant frequency of composite rectangular microcantilevers with equal width (CRMEW). This novel method, which is much more convenient for practical applications, is then confirmed by both experimental results and simulation results, and presents a strong potential to be used in the design and optimization of micromachined transducers."
}
@article{Huang20091202,
title = "A CMOS image sensor with light-controlled oscillating pixels for an investigative optobionic retinal prosthesis system",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1202 - 1211",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000858",
author = "Yan Huang and Emmanuel M. Drakakis and Patrick Degenaar and Chris Toumazou",
keywords = "CMOS image sensor",
keywords = "Low power",
keywords = "High dynamic range",
keywords = "Light-to-frequency conversion",
keywords = "Oscillating pixel",
abstract = "This paper presents a high-dynamic range CMOS image sensor architecture incorporating light-controlled oscillating pixels which can act as front-end for an investigative optobionic retinal prosthesis research effort. Each pixel acts as an independent oscillator, whose frequency is proportional to the local light intensity. A 9 × 9 pixel array has been fabricated in the AMS 0.35 μ m CMOS opto process. Each pixel's area amounts to 160 × 160 μ m 2 , each pixel photodiode area is 20 × 20 μ m 2 while the array occupies 2.89 mm 2 . Measured results show that the sensor can achieve a linear optical dynamic range of 80 dB (from 0.24 Hz to 2.2 kHz). Its linear electrical dynamic range exceeds 134 dB (from 100 mHz to 502 kHz). The nominal power dissipation is about 50 nW per pixel."
}
@article{Masoumi20091212,
title = "A new and efficient approach for estimating the accurate time-domain response of single and capacitive coupled distributed RC interconnects",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1212 - 1224",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920900086X",
author = "Massoud Masoumi and Nasser Masoumi and Amir Javanpak",
keywords = "Very large scale integration (VLSI)",
keywords = "Signal integrity",
keywords = "Distributed RC interconnects",
keywords = "Diffusion equation",
keywords = "Capacitive coupled lines",
keywords = "Coupling noise",
keywords = "Artificial neural network (ANN)",
abstract = "This paper describes a novel yet highly efficient approach for estimating the time-domain response of capacitive coupled distributed RC interconnects. By using this method, the voltage signal at any particular point in such wires can be accurately and quickly obtained with very low computational cost. The proposed model exhibits a very good agreement with HSPICE simulations with worst-case error less than 3% and can be readily implemented in CAD analysis tools. This paper also presents an efficient model to estimate the capacitive crosstalk in high-speed very large scale integration (VLSI) circuits. Experimental results show that the maximum error of our peak noise predictions is less than 2.5%. In addition, this work presents an efficient artificial neural network (ANN)-based technique for modeling the time-domain response of interconnects and crosstalk noise. While existing fast noise estimation metrics may overestimate or underestimate the coupling noise, the simulation results demonstrate the ability of this approach to successfully predict coupling noise with a very good accuracy as compared to HSPICE in modest CPU times. Thereby, the proposed models and techniques can be used to predict the signal integrity for designing high-speed and high-density VLSI circuits."
}
@article{Prodanov20091225,
title = "High abstraction level CAD tool implementation of MOS drain current models",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1225 - 1234",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000871",
author = "William Prodanov and Maurizio Valle",
keywords = "Behavioural modelling",
keywords = "CAD tools",
keywords = "MOS drain current model",
keywords = "Technological parameters extraction",
keywords = "Sample-and-hold circuit",
abstract = "This paper presents a toolbox in which a compact high abstraction level formulation of the MOS drain current was implemented. The formulation is based on the popular ACM compact MOS model: the approximations introduced in the model preserve the drain-to-source device symmetry and the continuity between all regions of operation (i.e. weak, moderate and strong inversion). The technological parameters involved in the formulation are obtained by means of a fully automatic extraction procedure. Finally, a detailed case study, in which a behavioural analysis of sample-and-hold circuits using the proposed toolbox is performed, is presented. The ATMEL ® 0.24 μ m CMOS process was used as reference for the case study. The MATLAB ® environment was used to implement the drain current model formulation, the technological parameters extraction and the case study as well."
}
@article{Yang20091235,
title = "A hybrid optimization approach for chip placement of multi-chip module packaging",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1235 - 1243",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000883",
author = "Ping Yang and Xiangnan Qin",
keywords = "Chip placement",
keywords = "Hybrid model",
keywords = "Thermal characteristics",
keywords = "Parameters",
keywords = "Optimization",
keywords = "Multi-chip module",
abstract = "The aim of this article is to provide a systematic method to perform optimization design for chip placement of multi-chip module in electronic packaging. Based on the investigation of the structural and thermal characteristics of multi-chip module, the key performance indexes of multi-chip module that include the lowest internal temperature objective, thermal-transfer accuracy, chip placement are analyzed. A hybrid model is presented by using genetic algorithm and response surface methodology for optimization. Furthermore, some design processes for improving the performance are induced. Finally, an example is discussed to apply the method."
}
@article{Zhang20091244,
title = "Compact non-binary fast adders using single-electron devices",
journal = "Microelectronics Journal",
volume = "40",
number = "8",
pages = "1244 - 1254",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209001086",
author = "Wancheng Zhang and Nan-Jian Wu",
keywords = "Fast adder",
keywords = "Non-binary arithmetic",
keywords = "Counter tree diagram",
keywords = "Single-electron devices",
keywords = "Signed-digital-adder",
abstract = "This paper proposes compact adders that are based on non-binary redundant number systems and single-electron (SE) devices. The adders use the number of single electrons to represent discrete multiple-valued logic state and manipulate single electrons to perform arithmetic operations. These adders have fast speed and are referred as fast adders. We develop a family of SE transfer circuits based on MOSFET-based SE turnstile. The fast adder circuit can be easily designed by directly mapping the graphical counter tree diagram (CTD) representation of the addition algorithm to SE devices and circuits. We propose two design approaches to implement fast adders using SE transfer circuits: the threshold approach and the periodic approach. The periodic approach uses the voltage-controlled single-electron transfer characteristics to efficiently achieve periodic arithmetic functions. We use HSPICE simulator to verify fast adders operations. The speeds of the proposed adders are fast. The numbers of transistors of the adders are much smaller than conventional approaches. The power dissipations are much lower than CMOS and multiple-valued current-mode fast adders."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "IFC - ",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00092-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000925",
key = "tagkey2009IFC"
}
@article{Lubaszewski20091041,
title = "Guest editorial",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1041 - ",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.058",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005685",
author = "Marcelo Lubaszewski and Andrew Richardson and C.C. Su"
}
@article{Szabó20091042,
title = "Thermal transient characterisation of the etching quality of micro electro mechanical systems",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1042 - 1047",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.119",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002352",
author = "Péter Szabó and Balázs Németh and Márta Rencz",
keywords = "Thermal transient",
keywords = "Etching quality",
keywords = "MEMS",
abstract = "The paper presents a non-destructive thermal transient measurement methodology that can reveal micron-sized differences among etched layers of MEMS structures. MEMS resonator devices and bridge structures made of polycrystalline silicon differing in etching times were investigated by simulations and measurements as well. Simulations showed that tiny differences in etching times of the sacrificial layers can cause significant changes in heat distribution. In the measurement process the voltage transients of the devices were captured. The results were transformed into temperature transients. Utilising temperature transients, small differences could be detected among the structures. The paper demonstrated simulation and measurement experiments by the applicability of thermal transient methodology for non-destructive testing of the etching quality in MEMS structures."
}
@article{Kerkhoff20091048,
title = "Fault co-simulation for test evaluation of heterogeneous integrated biological systems",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1048 - 1053",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002789",
author = "Hans G. Kerkhoff and Xiao Zhang",
keywords = "Monolithic heterogeneous integration",
keywords = "Bio fault modelling",
keywords = "Fault (co-)simulation",
keywords = "Microelectronic fluidic arrays",
abstract = "Heterogeneous integrated systems, combining, e.g. optical, magnetic, chemical devices and microelectronics, are becoming increasingly a matter of interest. Unfortunately, current system engineers lack the design and test tools to develop these emerging systems and guarantee a certain quality level. Furthermore, if these systems are used in a biological environment, bio-specific time-dependent faults can occur. An example is jamming of fluidic channels due to living, growing biological material. This paper will show fluidic modelling of our devices in VHDL-AMS, and apply it to system fault co-simulation obtained with regard to a new heterogeneous integrated device. It will aid the designer to investigate the influences of faults in the electrical and fluidic domain and take subsequent action, e.g. by adding design-for-test (DfT) observation hardware."
}
@article{Dhayni20091054,
title = "Pseudorandom BIST for test and characterization of linear and nonlinear MEMS",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1054 - 1061",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002243",
author = "A. Dhayni and S. Mir and L. Rufer and A. Bounceur and E. Simeu",
keywords = "Pseudorandom BIST",
keywords = "Linear and nonlinear MEMS",
keywords = "Test and characterization",
abstract = "In this paper we study the use of the pseudorandom (PR) technique for test and characterization of linear and nonlinear devices, in particular for micro electro mechanical systems (MEMS). The PR test technique leads to a digital built-in-self-test (BIST) technique that is accurate in the presence of parametric variations, noise tolerant, and has high-quality test metrics. We will describe the use of the PR test technique for testing linear and nonlinear MEMS, where impulse response samples of the device under test are considered to verify its functionality. Next, we illustrate and evaluate the application of this technique for linear and nonlinear MEMS characterization."
}
@article{Bastos20091062,
title = "Design of a soft-error robust microprocessor",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1062 - 1068",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004898",
author = "Rodrigo Possamai Bastos and Fernanda Lima Kastensmidt and Ricardo Reis",
keywords = "Fault-tolerant microprocessors",
keywords = "Soft errors",
keywords = "Transient faults",
keywords = "Single-event transients",
keywords = "Single-event upsets",
abstract = "The costs to protect a commercial microprocessor against soft errors are discussed in this work. Based on hardware and time redundancies, a protection scheme was designed at RT level to mitigate transient faults on combinational and memory circuits. A fault-tolerant IC version of a mass-produced 8-bit microprocessor is protected by the scheme. Design issues and results in area, performance and power are presented comparing the robust microprocessor with its non-protected version. The costs by flip-flop are also discussed permitting to estimate the overheads in area for any architecture. Furthermore, the RT-level protection scheme is compared with an electrical-level scheme based on a non-standard gate."
}
@article{Voutilainen20091069,
title = "A prognostic method for the embedded failure monitoring of solder interconnections with 1149.4 test bus architecture",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1069 - 1080",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002741",
author = "Juha Voutilainen and Jussi Putaala and Markku Moilanen and Heli Jantunen",
keywords = "Proactive diagnostics",
keywords = "1149.4 Analogue boundary scan",
keywords = "Thermal cycling",
keywords = "Reliability",
keywords = "Solder joint",
abstract = "This paper describes the feasibility of accurate low frequency measurements in predicting the breakdown of modern lead free ball grid array (BGA) interconnections. In these measurements, performed partly with 1149.4 analogue boundary scan, ceramic BGA modules measuring 15×15 mm in width, with 9×9 ball matrixes, were attached on an FR-4 printed wiring board (PWB) and thermally cycled over a temperature range of −40 to +125 °C. The condition of corner interconnections was monitored using the developed measurement methods and construction. In-situ measurements were performed with a datalogger during temperature cycling, accompanied with 1149.4 mixed-signal test bus measurements of corner interconnections performed between cycling intervals. In addition, the measurements were complemented by scanning acoustic microscopy and, X-ray. Monitoring corner interconnections by a simple, low-frequency voltage measurement method with embedded test constructions gives an early warning indication well before the electrical interconnection failures. Of two studied interconnection compositions, the ones with plastic core solder balls (PCSB) proved to be more reliable than the ones with 90/10 PbSn balls."
}
@article{Nicolescu20091081,
title = "Rapid systems prototyping at RSP’06",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1081 - ",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.059",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005673",
author = "Gabriela Nicolescu and Didier Buchs"
}
@article{Park20091082,
title = "A mixed-level virtual prototyping environment for SystemC-based design methodology",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1082 - 1093",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800219X",
author = "Sanggyu Park and Sangyong Yoon and Soo-Ik Chae",
keywords = "SystemC",
keywords = "Transaction level model",
keywords = "Channel",
keywords = "Architecture template",
keywords = "Virtual prototype",
abstract = "We propose a flexible mixed-level virtual prototyping environment, where models in different abstraction levels such as transaction level, register-transfer level, and software level can be co-simulated together. In the proposed environment, the designers should capture a transaction level system model before hardware–software partitioning, from which mixed-level virtual prototyping models can be refined with pre-defined and pre-verified communication primitives. We explain several techniques employed in the environment such as ID ports for software template efficiency, abstraction adapters in SystemC for mixed level simulation, and trace-driven simulation for faster performance evaluation. Moreover, transaction level descriptions in SystemC can be compiled and executed as software together with the DEOS, which is an operating system that provides SystemC APIs. We compared the simulation speed of several mixed-level virtual prototypes of a H.264 decoder to show the effectiveness of the proposed environment."
}
@article{Koutroulis20091094,
title = "Development of an FPGA-based system for real-time simulation of photovoltaic modules",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1094 - 1102",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.014",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800236X",
author = "Eftichios Koutroulis and Kostas Kalaitzakis and Vasileios Tzitzilonis",
keywords = "Photovoltaic system",
keywords = "Simulator",
keywords = "DC/DC converter",
keywords = "Field programmable gate array",
keywords = "Rapid system prototyping",
abstract = "Photovoltaic (PV) simulators are indispensable for the operational evaluation of PV energy production system components (e.g. battery chargers, DC/AC inverters, etc.), in order to avoid the time-consuming and expensive field-testing process. In this paper, the development of a novel real-time PV simulator based on Field Programmable Gate Arrays (FPGAs), is presented. The proposed system consists of a Buck-type DC/DC power converter, which is controlled by an FPGA-based unit using the Pulse Width Modulation (PWM) principle. The system operator is able to define both the PV module type to be simulated and the environmental conditions under which the selected PV module operates. The proposed design method enhances the rapid system prototyping capability and enables the reduction of the power converter size and cost due to the high clock speed feature of the FPGA-based control unit. The experimental results indicate that, using the proposed method, the PV module current–voltage characteristics examined are reproduced with an average accuracy of 1.03%."
}
@article{Kachris20091103,
title = "Design and performance evaluation of an adaptive FPGA for network applications",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1103 - 1110",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002206",
author = "Christoforos Kachris and Stephan Wong and Stamatis Vassiliadis",
keywords = "Reconfigurable logic",
keywords = "Network processing",
abstract = "This paper presents the design, implementation and performance evaluation of a coarse-grain dynamically reconfigurable FPGA platform for multi-service edge and access network devices. The platform consists of two MicroBlaze RISC processors and a number of hardware co-processors used for the processing of packet payloads (Data Encryption Standard (DES) and Lempel–Ziv Compression). The co-processors can be connected either directly to the processors or using a shared bus. The functionality of the co-processors is dynamically reconfigured to meet the requirements of the network workload. The system has been implemented on the Xilinx Virtex II Pro platform and the network traces from real passive measurements have been used for performance evaluation. The use of dynamically reconfigurable co-processors for network applications shows that the performance speedup versus a static version varies from 12% to 35% in the best case and from 10% to 15% on average, depending on the network traffic fluctuation."
}
@article{Chattopadhyay20091111,
title = "Integrated verification approach during ADL-driven processor design",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1111 - 1123",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002218",
author = "Anupam Chattopadhyay and Arnab Sinha and Diandian Zhang and Rainer Leupers and Gerd Ascheid and Heinrich Meyr",
keywords = "Functional verification",
keywords = "Assertion",
keywords = "Automatic test pattern generation",
keywords = "ASIP",
keywords = "ADL",
abstract = "Nowadays, architecture description languages (ADLs) are getting popular to achieve quick and optimal design convergence during the development of application specific instruction-set processors (ASIPs). Verification, in various stages of such ASIP development, is a major bottleneck hindering widespread acceptance of ADL-based processor design approach. Traditional verification of processors are only applied at register transfer level (RTL) or below. In the context of ADL-based ASIP design, this verification approach is often inconvenient and error-prone, since design and verification are done at different levels of abstraction. In this paper, this problem is addressed by presenting an integrated verification approach during ADL-driven processor design. Our verification flow includes the idea of automatic assertion generation during high-level synthesis and support for automatic test-generation utilizing the ADL-framework for ASIP design. We show the benefit of our approach by trapping errors in a pipelined SPARC-compliant processor architecture and in an application-specific DSP architecture."
}
@article{Metzger20091124,
title = "Introspection mechanisms for runtime verification in a system-level design environment",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1124 - 1134",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800178X",
author = "M. Metzger and A. Anane and F. Rousseau and J. Vachon and E.M. Aboulhamid",
keywords = "Net introspection",
keywords = "Runtime verification",
keywords = "Simulation",
keywords = "System-level design",
keywords = "ESys.NET",
keywords = "SystemC",
abstract = "A new generation of computer-aided design (CAD) tools is mandatory to cope with the growing complexity of System-On-Chip. We believe that they should be built on top of a modern and standard framework. ESys.NET is a design environment based on the .NET Framework. It takes advantage of advanced programming features which facilitates the integration of external tools. This paper presents a runtime verification tool for ESys.NET. Introspection ability is emphasized together with its capabilities to cooperate with third party tools. Introspection is used to retrieve the state of the model during simulation and to check a set of user defined properties. Neither the model nor the simulator is modified by the verification process. Experimentations on an AMBA bus model highlight the effectiveness of this approach."
}
@article{Janicki20091135,
title = "Dynamic thermal modelling of a power integrated circuit with the application of structure functions",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1135 - 1140",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002048",
author = "Marcin Janicki and Jedrzej Banaszczyk and Gilbert De Mey and Marek Kaminski and Bjorn Vermeersch and Andrzej Napieralski",
keywords = "Thermal modelling and simulation",
keywords = "Structure function",
keywords = "Contact thermal resistance",
keywords = "Heat transfer coefficient",
abstract = "This paper presents dynamic thermal analyses of a power integrated circuit with a cooling assembly. The investigations are based on the examination of the cumulative and differential structure functions obtained from the circuit cooling curves recorded during transient circuit temperature measurements. The experiments carried out and the comprehensive study of the computed structure functions rendered possible determination of the interface contact resistance and the heat transfer coefficient values necessary for numerical thermal simulations illustrating the influence of these thermal model parameters on circuit temperature."
}
@article{Marcu20091141,
title = "Energy characterization of mobile devices and applications using power–thermal benchmarks",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1141 - 1153",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002036",
author = "Marius Marcu and Dacian Tudor and Horatiu Moldovan and Sebastian Fuicu and Mircea Popa",
keywords = "Energy characterization",
keywords = "Power management",
keywords = "Thermal management",
keywords = "Power benchmark",
keywords = "Thermal benchmark",
abstract = "Power consumption and heat dissipation are the major factors that limit the performance and mobility of battery-powered devices. As they become key elements in the design of mobile devices and their applications, different power and thermal management strategies have been proposed and implemented during the previous years in order to overcome the mobility limitation due to the battery lifetime. A new energy management approach is to build energy-aware applications so that we have knowledge on the consumed energy while the device is running. In this paper we define two new types of benchmarks, called power and thermal benchmark, which are software applications intended for the run-time system level to provide power and thermal characterization. These benchmarks are an easy way for the applications to adapt their execution pattern, in order to finish their tasks both in time and in the battery lifetime."
}
@article{Spennagallo20091154,
title = "Evaluating the effects of temperature gradients and currents nonuniformity in on-chip interconnects",
journal = "Microelectronics Journal",
volume = "40",
number = "7",
pages = "1154 - 1159",
year = "2009",
note = "Mixed-Technology Testing Rapid System Prototyping",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.02.023",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800150X",
author = "N. Spennagallo and L. Codecasa and D. D’Amore and P. Maffezzoni",
keywords = "Electro-thermal model",
keywords = "On-chip interconnect",
keywords = "Current nonuniformity",
keywords = "Propagation delay",
abstract = "The paper provides a compact but accurate electro-thermal model of a long wiring on-chip interconnect embedded in the complex layout of a ULSI digital circuit. The proposed technique takes into account both the effect of temperature gradients over the chip substrate and the interconnect self-heating due to current flow. The proposed compact model is well suited to be interfaced with commercially available CAD tools employed for interconnect parasitic extraction and signal integrity verification. The paper also investigates the electro-thermal effects that arise in a long wiring on-chip interconnect in which current flow is dominated by displacement currents and thus is not uniform along the line."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "IFC - ",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00077-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000779",
key = "tagkey2009IFC"
}
@article{Zhang2009881,
title = "A wide band differentially switch-tuned CMOS monolithic quadrature VCO with a low Kvco and high linearity",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "881 - 886",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000202",
author = "Ke Zhang and Shiwei Cheng and Xiaofang Zhou and Wenhong Li and Ran Liu",
keywords = "VCO",
keywords = "Switch capacitor array",
keywords = "Phase noise",
keywords = "Quadrature",
keywords = "Frequency divider",
keywords = "Kvco",
abstract = "A wide band, differentially switch-tuned CMOS monolithic LC–VCO is presented in this paper, as well as a frequency divider for high linearity, low Kvco quadrature signal generation. A linearity control logic is proposed. The Kvco linearity is improved to be lower than 17.68 MHz/V. By using the proposed CML DFF, the operating frequency of the frequency divider is increased by 20% with a power consumption of 3.6 mW. The proposed design has been fabricated and verified in a 0.18 μm CMOS process. The QVCO is tuned in a combined way of continuous technology and 4 bit binary switch capacitor array (SCA) discrete tuning technology. The measurement indicates that the QVCO has a 19.7% tuning range from 1.816 to 2.213 GHz. The measured phase noise is −112.25 dBc/Hz at 1 MHz offset from the 1.819 GHz carrier and draws a current of 4.0 mA around at a 1.8 V supply."
}
@article{Arena2009887,
title = "Capacitive humidity sensors based on MWCNTs/polyelectrolyte interfaces deposited on flexible substrates",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "887 - 890",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000172",
author = "A. Arena and N. Donato and G. Saitta",
keywords = "MWCNTs",
keywords = "Flexible sensors",
keywords = "Humidity sensors",
keywords = "Capacitive sensors",
abstract = "Inexpensive humidity sensors operating at room temperature are developed by casting on glossy paper linearly shaped carbon nanotubes electrodes, spaced by few hundreds microns, and sensitive layers consisting of iron oxide nanopowder dispersed in a polyelectrolyte host. The electrical behaviour of the devices, investigated by using triangular voltage inputs, is found to be mainly capacitive. The humidity sensing functionality is demonstrated by a reversible change of the devices’ capacitance, from few tens pF to hundreds pF, as the relative humidity level changes from 35% to 60%. The average response and recovery time of the devices is found to be of the order of a few min."
}
@article{Chalabi2009891,
title = "Thermal behavior Spice study of 6H-SiC NMOS transistors",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "891 - 896",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005879",
author = "D. Chalabi and A. Saidane and M. Idrissi-Benzohra and M. Benzohra",
keywords = "Thermal behavior",
keywords = "NMOS",
keywords = "6H-SiC",
keywords = "Current mirrors",
keywords = "Spice simulation",
keywords = "Differential amplifiers",
abstract = "Silicon carbide is a material that is undergoing major advances associated with a broad scope in the field of electronics. The main properties of silicon carbide such as its high thermal conductivity and high band gap make it a material suitable for use in high-temperature and high-power applications. In this Spice study, the thermal behavior of 6H-SiC NMOS transistors is analyzed through their conductance and transconductance changes with temperature in the range −200 to 700 °C. The performances in two basic applications, current mirrors and differential amplifiers, are compared to similar circuits with silicon transistors. The results show that the 6H-SiC NMOS transistors can be used up to 700 °C, while those based on silicon transistors are limited to around 160 °C."
}
@article{Tsitouras2009897,
title = "Ultra wideband, low-power, 3–5.6 GHz, CMOS voltage-controlled oscillator",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "897 - 904",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000214",
author = "Athanasios Tsitouras and Fotis Plessas",
keywords = "Ultra wideband",
keywords = "Ultra wideband FM (UWBFM) transmitter",
keywords = "Low-power",
keywords = "Phase-noise",
keywords = "Relaxation oscillator",
keywords = "Current control oscillator (CCO)",
keywords = "Frequency doubling techniques",
abstract = "In this paper, a low-power inductorless ultra wideband (UWB) CMOS voltage-controlled oscillator is designed in TSMC 0.18 μm CMOS technology as a part of a ultra wideband FM (UWBFM) transmitter. The VCO includes a current-controlled oscillator (CCO) which generates output frequencies between 1.5 and 2.8 GHz and a voltage-to-current (V-to-I) converter. A low-power frequency doubler based on a Gilbert cell, which operates in weak inversion, doubles the VCO tuning range achieving oscillation frequencies between 3 and 5.6 GHz. Thus, the well-known proportionality between the oscillation frequency and the bias tuning current in CCOs is avoided for the entire achieved tuning range, resulting in a lower power design. The employed architecture provides high suppression, over 45 dB, of the 1st and 3rd harmonics, while enabling high-frequency operation and conversion gain due to the unbalanced structure and the single-ended output. The current consumption is 5 mA at a supply voltage of 1.8 V. The VCO exhibits a phase noise of −80.56 dBc/Hz at 1 MHz frequency offset from the carrier and a very high ratio of tuning range (60.4%) over power consumption equal to 8.26 dB which is essential for a UWBFM transmitter."
}
@article{Ding2009905,
title = "Analytical timing model for inductance-dominant interconnect based on traveling wave propagation",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "905 - 911",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.061",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005715",
author = "Wen Ding and Gaofeng Wang",
keywords = "Inductance",
keywords = "Interconnect",
keywords = "Timing modeling",
keywords = "Traveling wave",
abstract = "As accurate and efficient timing prediction is very important for integrated circuit design, an analytical timing model for inductive-effect dominated resistance–inductance–capacitance (RLC) transmission line with resistive driver and capacitive load is proposed by virtue of traveling wave propagation and perturbation technique. This model is theoretically stable and computationally efficient. Comparison with other analytical and SPICE models illustrates that this timing model can achieve excellent accuracy for inductance-dominant interconnect. Incorporating with decoupling technique, this model could be readily extended to coupled interconnects."
}
@article{Luo2009912,
title = "Effects of dimensions on the sensitivity of a conducting polymer microwire sensor",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "912 - 920",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.064",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005739",
author = "Cheng Luo and Anirban Chakraborty",
keywords = "Conducting polymers",
keywords = "Microwire sensors",
keywords = "Surface-to-volume ratio",
keywords = "Sensitivity",
keywords = "Intermediate-layer lithography",
abstract = "It is commonly considered that the sensitivity of a microsensor increases with its increasing surface-to-volume ratio. However, it is not exactly clear how the surface-to-volume ratio affects the sensitivity of a conducting polymer microsensor. The change in any of the three geometrical dimensions (i.e., length, width and thickness) of a microsensor changes the surface-to-volume ratio. In designing a microsensor of desired sensitivity, it is important to know the effect of each dimension on the sensitivity for properly defining the sizes and shapes of the microsensor. As such, in this work, we have investigated the effects of each individual dimension on the sensitivity of a conducting polymer microwire sensor. Polypyrrole (PPy) and Poly (3,4-dimethlydioxythiophene) poly(styrenesulfonate) (PEDOT–PSS) microwire sensors of different dimensions were fabricated using an intermediate-layer lithography (ILL) method. They were further employed to detect methanol and acetone vapors at concentrations in the range of 0.6–7.1 parts per thousand (ppt). The corresponding three relationships between the three geometrical dimensions and the sensitivities were found using a statistical program, SAS. From the point view of surface-to-volume ratio, the thickness should affect the sensitivity much more than the other two dimensions. However, the three relationships indicate that the effects of the three geometrical dimensions on the sensitivity of a microwire sensor vary with the conducting polymer materials and the targets to detect. In other words, which dimension has more effects on sensitivity is case-dependent. Results presented in this work can be potentially used to aid in the design of conducting polymer microwire sensors of high sensitivity."
}
@article{Arslanalp2009921,
title = "A BJT technology-based current-mode tunable all-pass filter",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "921 - 927",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.02.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000445",
author = "Remzi Arslanalp and Erkan Yuce",
keywords = "All-pass filter",
keywords = "Current-mode",
keywords = "BJT",
keywords = "Electronic tunability",
abstract = "In this paper, a new bipolar technology-based configuration for providing inverting first-order current-mode (CM) all-pass filter response is proposed. One of the main advantages of the introduced active C topology is to have the property of electronic tunability of its pole frequency without requiring passive component matching condition. To show the performance of suggested filter, simulations are achieved by means of PSPICE program. Moreover, experimental test results are included."
}
@article{Yuce2009928,
title = "Novel floating simulated inductors with wider operating-frequency ranges",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "928 - 938",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005867",
author = "Erkan Yuce and Shahram Minaei",
keywords = "Floating inductor simulator",
keywords = "Current conveyor",
keywords = "Analog filter",
keywords = "CMOS",
abstract = "In this paper, a number of simulated floating inductors (FIs) employing second-generation current conveyor (CCII), current-feedback operational amplifier (CFOA), differential voltage current conveyor (DVCC) and differential difference current conveyor (DDCC) are proposed. They employ only a grounded capacitor; accordingly, they are suitable for integrated circuit (IC) implementation. Some of the developed FI simulators demonstrate the feature of improved low-frequency performance while the other ones suffer from the Z/Y terminal parasitic resistors bringing extra series resistors to the inductances of the simulated FIs. Two novel methods for reducing/eliminating the unwanted series resistance in equivalent inductances of the FIs are developed, one of which is called the direct design technique accomplished by adjusting the resistive component/components of the FIs. The series resistors of the FIs affecting their low-frequency performance can be canceled by adding floating negative resistors in series, which is another method. Three of the presented FIs as examples are chosen in order to verify the developed method, perform their simulations and show their performance."
}
@article{Li2009939,
title = "Low cost bulk-silicon CDMOS technology and enhanced dv/dt high voltage driver circuit for PDP data driver IC",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "939 - 943",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005764",
author = "Haisong Li and Qinsong Qian and Hong Wu and Weifeng Sun and Longxing Shi",
keywords = "Plasma display panel",
keywords = "Data driver IC",
keywords = "Bulk-silicon",
keywords = "Driver circuit",
keywords = "dv/dt",
abstract = "In this paper, a 256-channel data driver IC for plasma display panels (PDPs) is proposed. A new low cost 0.5 μm bulk-silicon CDMOS (CMOS and DMOS) technology is developed, resulting in the improvement of input data frequency up to 120 MHz and reduction of die cost about 20% compared with the conventional one. A novel high voltage driver circuit is also presented to optimize dv/dt of the output signal from 1.2 to 0.2 V/ns. The proposed circuit can avoid unwanted turning on of the pLEDMOS transistors in output stage and cut down the power dissipation by 12% compared with the conventional one. The application results show rising and falling times of the output stage are 45 and 84 ns, respectively."
}
@article{Chung2009944,
title = "Implementation of low-voltage static RAM with enhanced data stability and circuit speed",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "944 - 951",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.063",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005740",
author = "Yeonbae Chung and Seung-Ho Song",
keywords = "SRAM",
keywords = "Six-transistor cell",
keywords = "Static noise margin",
keywords = "Write margin",
keywords = "Cell current",
abstract = "This paper presents a novel SRAM circuit technique for simultaneously enhancing the cell operating margin and improving the circuit speed in low-voltage operation. During each access, the wordline and cell power node of selected SRAM cells are internally boosted into two different voltage levels. This technique with optimized boosting levels expands the read margin and the write margin to a sufficient amount without an increase of cell size. It also improves the SRAM circuit speed owing to an increase of the cell read-out current. A 256 Kbit SRAM test chip with the proposed technique has been fabricated in a 0.18 μm CMOS logic process. For 0.8 V supply voltage, the design scheme increases the cell read margin by 76%, the cell write margin by 54% and the cell read-out current by three times at the expense of 14.6% additional active power. Silicon measurement eventually confirms that the proposed SRAM achieves nearly 1.2 orders of magnitude reduction in a die bit-error count while operating with 26% faster speed compared with those of conventional SRAM."
}
@article{Andrade2009952,
title = "A new compensation mechanism for environmental parameter fluctuations in CMOS digital ICs",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "952 - 957",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000032",
author = "D. Andrade and F. Martorell and A. Calomarde and F. Moll and A. Rubio",
keywords = "Noise",
keywords = "Power supply noise",
keywords = "Temperature fluctuations",
keywords = "Digital design",
abstract = "Process-induced and environmental fluctuations play an important role in the design process for modern high-performance integrated circuits. The conventional principle of considering the verification of worst-case requirements reduces the performance that can potentially be achieved by circuits and technology. This paper presents a new mechanism that permits the compensation of random independent delay fluctuations due to environmental factors. It shows that it is significantly possible to reduce the latency time of a circuit even for a moderate length of pipeline stages."
}
@article{Drakaki2009958,
title = "De-embedding method for on-wafer RF CMOS inductor measurements",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "958 - 965",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000044",
author = "Maria Drakaki and Alkis A. Hatzopoulos and Stylianos Siskos",
keywords = "De-embedding",
keywords = "On-wafer RF CMOS measurements",
keywords = "Integrated inductors",
abstract = "In this work, an accurate de-embedding method for on-wafer RF measurements of CMOS large area devices like the inductors is presented. The method uses distributed and lumped-element models to represent the parasitic elements. The interconnect parasitics are calculated using the transmission line theory. The proposed method is compared to existing de-embedding methods. The validity of the method is checked with the DC resistance value of the interconnects as calculated from the layout and as extracted from measurements, as well as with inductance results of the fabricated inductor, extracted from measurements and from electromagnetic simulations. On-wafer S-parameter measurements have been taken from a test chip up to 20 GHz."
}
@article{Hsia2009966,
title = "High-performance active polyphase filter design for digital TV tuner",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "966 - 972",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000184",
author = "Shih-Chang Hsia and Kuan-Ting Lin",
keywords = "DTV",
keywords = "Polyphase",
keywords = "Active filter",
keywords = "Mixer",
keywords = "Image rejection",
keywords = "Rf chip",
keywords = "Tuner",
abstract = "This paper presents the polyphase filter design for the tuner of DTV front-end system. The polyphase filter is designed with an active circuit to improve the chip performance. Most of passive capacitor and resistor components are replaced with MOS transistors. The proposed method not only can reduce the chip area but also gain the signal level. For the prototyping implementation, the current channel bands in Taiwan are referred, which the frequency range is from 530 to 602 MHz for DTV programs. In experiments, the polyphase filter can achieve 85 dB for the image rejection in the center frequency. The main signal can be gained about 2–5 dB without using extra amplifier. The chip size is about 0.09 mm2, and the average power dissipation is about 15 mW, when the chip technology employed TSMC 0.35 μm CMOS process. The proposed chip outperforms with less area and higher gain."
}
@article{Tajalli2009973,
title = "Ultra-low power 32-bit pipelined adder using subthreshold source-coupled logic with 5 fJ/stage PDP",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "973 - 978",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000196",
author = "Armin Tajalli and Elizabeth J. Brauer and Yusuf Leblebici",
keywords = "CMOS integrated circuits",
keywords = "Ultra-low power circuit design",
keywords = "Source-coupled logic (SCL)",
keywords = "Current-mode logic (CML)",
keywords = "Subthreshold SCL (STSCL)",
keywords = "Pipelined SCL",
abstract = "This article presents a new approach for improving the power-delay performance of subthreshold source-couple logic (STSCL) circuits. Using a simple two-phase pipelining technique, it is possible to increase the activity rate of STSCL gates with negligible additional cost, and hence reduce the total system energy consumption per operation. In the proposed pipelined topology, each STSCL gate is followed by a simple cross-coupled differential pair operating as a state keeper with a very low power consumption and small area overhead. Measurement results on a 32-bit pipelined adder chain fabricated with 0.18 μ m CMOS technology show that the proposed approach can achieve a significant reduction in power-delay product (PDP) down to 5 fJ/stage."
}
@article{Kureshi2009979,
title = "Performance comparison of CNFET- and CMOS-based 6T SRAM cell in deep submicron",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "979 - 982",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.062",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005752",
author = "A.K. Kureshi and Mohd. Hasan",
keywords = "Nanoelectronics",
keywords = "Carbon nanotubes",
keywords = "CNFET",
keywords = "Deep submicron",
keywords = "SRAM",
abstract = "This paper presents a performance comparison of a carbon nanotube-based field effect (CNFET)- and CMOS-based 6T SRAM cell at the 32 nm technology node. HSPICE simulations, carried out using Berkeley predictive technology model (BPTM), show that for a cell ratio and pull-up ratio of 1, CNFET-based 6T SRAM cell provides an improvement of 21% in read static noise margin (SNM) at VDD=0.4 V. The speed of CNFET cell is 1.84× that of CMOS cell. The standby leakage of CNFET cell is 84% less than CMOS cell. The process parameter variation results in 1.2% change in the read SNM of CNFET cell as compared with a wide variation of around 10.6% in CMOS cell."
}
@article{Bakkaloglu2009983,
title = "Design of a tunable multi-band differential LC VCO using 0.35 μm SiGe BiCMOS technology for multi-standard wireless communication systems",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "983 - 990",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.10.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005077",
author = "Ahmet Kemal Bakkaloglu and Arzu Ergintav and Emre Ozeren and Ibrahim Tekin and Yasar Gurbuz",
keywords = "VCO",
keywords = "BiCMOS",
keywords = "Wideband VCO",
keywords = "Accumulation MOS varactor",
keywords = "RFIC",
keywords = "SiGe",
abstract = "In this paper, an integrated 2.2–5.7 GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 μm SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27–2.51 GHz, 2.48–2.78 GHz, 3.22–3.53 GHz, 3.48–3.91 GHz and 4.528–5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and −6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as −37.21 and −47.6 dBm, respectively. The phase noise between −110.45 and −122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between −176.48 and −181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between −6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4–6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm2 on Si substrate, including DC, digital and RF pads."
}
@article{Rebai2009991,
title = "Pseudorandom signal sampler for relaxed design of multistandard radio receiver",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "991 - 999",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000160",
author = "Chiheb Rebai and Manel Ben-Romdhane and Patricia Desgreys and Patrick Loumeau and Adel Ghazel",
keywords = "Software defined radio",
keywords = "Non-uniform sampling",
keywords = "Multistandard radio receiver",
keywords = "Pseudorandom signal sampler",
abstract = "This paper proposes a novel software defined radio (SDR) receiver design using non-uniform sampling (NUS) technique implemented by original design of a pseudorandom signal sampler (PSS) circuit for controlling data conversion to relax multistandard receiver circuit constraints. The proposed and designed NUS-based SDR receiver allows spectral alias suppression at integer multiples of sampling frequency offering the advantages of relaxing anti-aliasing filter (AAF), reducing the analog-to-digital converter (ADC) dynamic power consumption and the automatic gain control (AGC) range as well. The PSS circuit, generating pseudorandom clock signal, with enough time-quantization accuracy, was designed. The PSS is implemented in 65-nm digital CMOS technology and occupies 470 (μm)2. It features up to 200 MHz “mean clock” for 3.2 GHz main clock while drawing 242 μA for 1.2 V supply. Mixed experimental/simulation tests, of designed NUS-based SDR receiver, revealed a confirmation of alias-free performances and the achievement of a 72 dB (12-bit ADC) dynamic range after signal reconstruction."
}
@article{Sayil20091000,
title = "Single Event crosstalk shielding for CMOS logic",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "1000 - 1006",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.065",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005727",
author = "Selahattin Sayil and Abhishek B. Akkur and Nelson Gaspard III",
keywords = "Single Event transient",
keywords = "Single Event hardening",
keywords = "Crosstalk noise",
abstract = "With advances in technology scaling, CMOS circuits are increasingly more sensitive to transient pulses caused by Single Event particles. Hardening techniques for CMOS combinational logic have been developed to address the problems associated with Single Event transients, but in these designs, Single Event crosstalk effects have been ignored. In order to complement the Single Event upset (SEU) hardening process, coupling effects among interconnects need to be considered in the Single Event hardening and analysis of CMOS logic gates due to technology scaling effects that increase both SE vulnerability and crosstalk effects. As technologies advance, the coupling effects increasingly cause SE transients to contaminate electronically unrelated circuit paths which can in turn increase the “Single Event susceptibility” of CMOS circuits. Serious effects may occur if the affected line is a clock line or an input line of voters in triple-modular redundancy (TMR) circuit. Hence, this work first analyzes Single Event crosstalk on recent technologies and then proposes hardening techniques to reduce Single Event crosstalk. Hardening results are demonstrated using HSpice Simulations with interconnect and device parameters derived in 90 nm technology."
}
@article{Koo20091007,
title = "Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology",
journal = "Microelectronics Journal",
volume = "40",
number = "6",
pages = "1007 - 1012",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.01.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000020",
author = "Yongseo Koo and Kwangyeob Lee and Kuidong Kim and Jongki Kwon",
keywords = "Electrostatic discharge",
keywords = "ESD",
keywords = "Holding voltage",
keywords = "Triggering current",
keywords = "Latch-up",
keywords = "Power clamptexttext",
abstract = "The proposed device has a high holding voltage and a high triggering current characteristic. These characteristics enable latch-up immune normal operation as well as superior full chip electro-static-discharge (ESD) protection. The device has a small area in requirement robustness in comparison to gate-grounded NMOS (ggNMOS). The proposed ESD protection device is designed in 0.25 μm CMOS technology. In the experimental result, the proposed ESD clamp has a double trigger characteristic, a high holding voltage of 3.8 V and a high trigger current of greater than 120 mA. The robustness has measured to HBM 8 kV (HBM: human body model) and MM 400 V (MM: machine model). The proposed device has a high-level It2 of 52 mA/μm approximately."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "IFC - ",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00052-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000524",
key = "tagkey2009IFC"
}
@article{Bernard2009655,
title = "European Nano Systems 2007",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "655 - ",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.02.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000421",
author = "Bernard and Courtois"
}
@article{Dezan2009656,
title = "Towards a framework for designing applications onto hybrid nano/CMOS fabrics",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "656 - 664",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.072",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004382",
author = "Catherine Dezan and Ciprian Teodorov and Loïc Lagadec and Michael Leuchtenburg and Teng Wang and Pritish Narayanan and Andras Moritz",
keywords = "CAD tool",
keywords = "Nanotechnology",
keywords = "Fault tolerance",
abstract = "The design of CAD tools for nanofabrics involves new challenges not encountered with conventional design flow used for CMOS technology. In this paper, we propose to define a new framework able to help the designer to map an application on a wide range of emerging nanofabrics. Our proposal is based on a variety of models that capture as well as isolate the differences between these fabrics. This tool supports the design flow starting from behavioral description up to final layout. It integrates fault-tolerant techniques and fabric-related density transformations with more conventional design automation techniques. After an overview of common requirements, physical models, and associated techniques, a case study in the context of NASIC fabrics is used to illustrate some of the concepts."
}
@article{Lagadec2009665,
title = "Toolset for nano-reconfigurable computing",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "665 - 672",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2009.02.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000275",
author = "Loïc Lagadec and Bernard Pottier and Damien Picard",
keywords = "Layered approach",
keywords = "FPGA",
keywords = "CAD tool",
abstract = "Contrasting with the extensive research focusing on nano-devices properties and fabrication, not enough attention is probably given to computing architectures for these devices. This paper describes a method for mapping an FPGA architecture to a nano-device called NASIC (for Nano-ASIC). This mapping is an illustration of the interest of nano- and micro-architecture models stacked to quickly obtain CAD environments for the investigated technologies."
}
@article{CedeñoMattei2009673,
title = "Synthesis of high-coercivity cobalt ferrite nanocrystals",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "673 - 676",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.040",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004400",
author = "Y. Cedeño-Mattei and O. Perales-Pérez",
keywords = "Cobalt ferrite",
keywords = "High coercivity",
keywords = "Nanocrystals",
keywords = "Modified coprecipitation route",
abstract = "Cobalt ferrite (CoFe2O4) possesses excellent chemical stability, good mechanical hardness and a large positive first-order crystalline anisotropy constant, which made this ferrite a promising candidate for magneto-optical recording media. In addition to precise control on the composition and structure of CoFe2O4, the success of its practical application will depend on the capability of controlling particle size at the nanoscale. This size-controlled synthesis approach became possible by modifying the oversaturation conditions during ferrite formation in water. Optimum oversaturation was achieved by monitoring of the feeding flow-rate of reactant solutions. X-ray diffraction (XRD) and Fourier-transform infrared spectroscopy (FT-IR) analyses confirmed the formation of the ferrite structure after a reaction time as short as 5 min. M–H measurements verified the strong influence of synthesis conditions and crystal size on the magnetic properties of ferrite nanocrystals. The coercivity values increased from 210 up to 5840 Oe under optimum synthesis conditions."
}
@article{CalderónOrtiz2009677,
title = "MnxZn1−xFe2−yRyO4 (R=Gd, Eu) ferrite nanocrystals for magnetocaloric applications",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "677 - 680",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005089",
author = "E. Calderón-Ortiz and O. Perales-Perez and P. Voyles and G. Gutierrez and M.S. Tomar",
keywords = "Ferrite nanocrystals",
keywords = "Doping",
keywords = "Curie temperature",
keywords = "Magnetocaloric applications",
abstract = "The use of a ferromagnetic fluid for cooling applications represents an encouraging alternative to traditional methods; the fact that the fluid can be pumped with no moving mechanical parts, using the magnetocaloric effect, can be a great advantage for many applications where high maintenance costs and power consumption are undesirable. The nanocrystalline material suitable for this specific application must exhibit certain specific properties, such as tunable Curie temperature (TC) and high saturation magnetization (Ms). The present work is focused on the aqueous synthesis and characterization of Mn–Zn ferrite nanocrystals and their subsequent doping with rare-earth elements (Gd and Eu ions), as an attempt to modify the TC. Magnetic characterization of ferrite nanocrystals showed that room temperature Ms and the corresponding TC values were strongly dependent on the type and amount of the dopant species."
}
@article{Schreck2009681,
title = "Preparation and characterization of ceramics laser alloyed with WO3 and CuO nanopowders",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "681 - 686",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.038",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004345",
author = "S. Schreck and M. Rohde",
keywords = "LTCC",
keywords = "Thermal conductivity",
keywords = "Electrical conductivity",
keywords = "Cladding",
keywords = "Surface modification",
keywords = "Composite",
abstract = "The surface of a ceramic substrate can be modified locally by introducing a second phase into a melt pool generated by a laser beam. CuO and WO3 powders with nano-sized particles were used to laser-alloy alumina and a low-temperature co-fired ceramic (LTCC). A composite with complex multiphase microstructure was developed with particle agglomerates, small crystals as well as grains covered with reaction phase, in parts with typical length scales down to the submicron range. The geometry of the modified area could be controlled by the process parameters as well.
A significant change of the thermal and electrical properties could be established for the laser-alloyed tracks in comparison with that of the ceramic substrate. The developed composites showed an electrical conductivity with a negative temperature coefficient for resistivity, i.e. resistivity decreases with increase in temperature, which is typical for semiconductors. An enhancement of thermal conductivity could be established as well. Especially for the WO3 powder, it could be increased about 50% compared to the unmodified LTCC substrate."
}
@article{Vasilyeva2009687,
title = "Synthesis of tungsten disulphide nanoparticles by the chemical vapor condensation method",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "687 - 691",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.066",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005703",
author = "E.S. Vasilyeva and O.V. Tolochko and B.K. Kim and D.W. Lee and D.S. Kim",
keywords = "Tungsten disulphide",
keywords = "Nanoparticles",
keywords = "Fulleren-like structures",
keywords = "Nanofabrication",
keywords = "Tribology",
keywords = "Solid lubricants",
abstract = "Crystalline tungsten disulphide nanoparticles were successfully synthesized by the chemical vapor condensation (CVC) method. The process performed as decomposition of tungsten hexacarbonyl over sulphur vapor in inert gas flow, where WS2 nanoparticles were synthesized by direct reaction between as formed pure tungsten nanoclusters and sulphur vapor. Influence of experimental parameters on shape, size distribution, structure and phase composition of nanoparticles were evaluated by transmission and scanning electron microscopy and X-ray diffraction analysis. The produced nanoparticles have closely spherical shape with the mean size in the range 20–70 nm in diameter dependently of process parameters. Nested “onion-like” structure of nanoparticles was observed. The mean value of interlayer distance in the {0 0 0 1} direction, is about 0.6358±0.031 nm. Due to nanodimensional size, physical properties and layered structure tungsten disulphide nanoparticles have great potential as a solid lubricant material."
}
@article{Inoue2009692,
title = "Influence of catalyst supporters on catalyst nanoparticles in synthesis of single-walled carbon nanotubes",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "692 - 696",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.043",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004394",
author = "Shuhei Inoue and Kazuya Nomura and Yukihiko Matsumura",
keywords = "Carbon nanotube",
keywords = "Cluster molecular orbital calculations",
keywords = "Electronic orbital",
keywords = "Density functional theory",
keywords = "Chemical vapor deposition",
abstract = "It is important to understand catalytic reactions involved in synthesizing carbon nanotubes. Usually, catalysts are used with supporters for better stability and influences of supporters on catalysis is negligible; however, catalysts used for synthesizing single-walled carbon nanotubes are too small to neglect their influence. Here, we experimentally investigated efficiencies of commonly used catalyst supporters such as magnesium oxide, zeolite, and aluminum oxide when they were combined with iron–cobalt, which is a typical catalyst. It was observed that zeolite-supported catalysts could synthesize single-walled carbon nanotubes, while the others could not. Cluster molecular orbital calculations showed that electronic states of catalysts supported by MgO in the boundary layer between catalysts and supporters were restricted due to covalent bonding between cobalt and magnesium. Density functional theory calculations indicated that catalysts on zeolite had enough electrical orbital near Fermi level and they widely spread over catalysts surface, but catalysts on MgO did not. This characteristic can affect catalytic activities."
}
@article{Voves2009697,
title = "Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "697 - 705",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.039",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004357",
author = "J. Voves and Z. Šobáň and M. Janoušek and V. Komarnickij and M. Cukr and V. Novák",
keywords = "Ferromagnetic semiconductor",
keywords = "Atomic force microscopy",
keywords = "Local anodic oxidation",
keywords = "Magnetoresistence",
abstract = "The results of local anodic oxidation (LAO) on the thin GaMnAs layers are reported. The ferromagnetic GaMnAs layers were prepared by low-temperature molecular beam epitaxy (MBE) growth in a Veeco Mod Gen II machine. The LAO process was performed with the atomic force microscope (AFM) Smena NT-MDT placed in the sealed box with the controlled humidity in the range 45–80%. The oxide was grown in the semi-contact mode of the AFM. The sample was positively biased with respect to the AFM tip with the bias from 6 to 24 V. The conductive diamond-coated AFM tips with the radius 30 nm were utilized for the oxidation. The tip speed during the oxidation was changed from 400 nm/s to 1.5 μm/s. The tip force was also changed during the oxidation. The height of oxide nanolines increases with applied voltage from 3 to 18 nm. The width of these lines was approximately 100 nm at half-maximum. The magnetoresistance measurements of the sample with 1D lateral constriction by the LAO and the micromagnetic simulations of the structure with two lateral constrictions are presented."
}
@article{Klason2009706,
title = "Fabrication and characterization of p-Si/n-ZnO heterostructured junctions",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "706 - 710",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.070",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004370",
author = "P. Klason and M.M. Rahman and Q.-H. Hu and O. Nur and R. Turan and M. Willander",
keywords = "ZnO",
keywords = "II–VI semiconductor",
keywords = "Current–voltage",
keywords = "Nanostructure",
keywords = "Heterojunction",
abstract = "In this paper ZnO nanorods and nanodots (with and without a SiO 2 buffer layer) were grown on p-Si, forming p–n heterojunctions. The nanorod devices showed no visible electroluminescence (EL) emission but showed rectifying behavior. Covering around 60% of the length of the nanorods with PMMA produced an ideality factor of 3.91 ± 0.11 together with a reverse saturation current of 6.53 ± 4.2 × 10 - 8 A . Up to two orders of magnitude rectification was observed for the current at bias - 3 and 3 V. The nanodot devices showed EL emission under forward bias conditions. It seems that the buffer layer increased both the stability and efficiency of the devices, since the buffer layer device could operate at larger applied voltage and showed EL emission under reverse bias."
}
@article{deAquinoFarias2009711,
title = "International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "711 - ",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005107",
author = "Gil de Aquino Farias and Gil de Aquino Farias and Jeanlex S. de Sousa and Eudenílson L. Albuquerque and Mohamed Henini"
}
@article{SA2009712,
title = "Non-linear graphene optics for terahertz applications",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "712 - 715",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.042",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005119",
author = "S.A. and Mikhailov",
keywords = "Graphene",
keywords = "Electromagnetic response",
keywords = "Plasmons",
keywords = "Frequency multiplication",
keywords = "Terahertz radiation",
abstract = "The linear electrodynamic properties of graphene—the frequency-dependent conductivity, the transmission spectra and collective excitations—are briefly outlined. The non-linear frequency multiplication effects in graphene are studied, taking into account the influence of the self-consistent-field effects and of the magnetic field. The predicted phenomena can be used for creation of new devices for microwave and terahertz optics and electronics."
}
@article{Wright2009716,
title = "Thermodynamic properties of graphene nanoribbons under zero and quantizing magnetic fields",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "716 - 718",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005120",
author = "A.R. Wright and Junfeng Liu and Zhongshui Ma and Z. Zeng and W. Xu and C. Zhang",
keywords = "Graphene",
keywords = "Absorption",
keywords = "Spin–orbit interaction",
abstract = "The thermodynamic properties of graphene nanoribbons under zero and finite magnetic fields have been investigated. We have obtained qualitative and quantitative results of the free energy and the magnetic susceptibility in graphene nanoribbons. The electronic states in the tight-binding approximation were used to calculate the thermal and magnetic properties. In the case of a finite magnetic field, the Harper equation was solved for the electronic state for various wavevectors. The magnetic field and temperature dependence of the magnetic susceptibility over a wide field and temperature range are presented."
}
@article{Hyart2009719,
title = "Possible THz Bloch gain in dc–ac-driven superlattices",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "719 - 721",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.038",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005132",
author = "Timo Hyart and Natalia V. Alexeeva and Jussi Mattas and Kirill N. Alekseev",
keywords = "Semiconductor superlattice",
keywords = "THz radiation",
keywords = "Generation and amplification",
keywords = "Bloch gain",
abstract = "We study theoretically the feasibility of amplification and generation of THz radiation in dc–ac-driven semiconductor superlattices in the absence of electric domains. We find that if in addition to dc bias strong ac pump fields are applied, Bloch gain profile for a small THz signal can be achieved under conditions of positive static differential conductivity. We briefly review the case of THz pump and present preliminary results on the use of pump fields belonging to the microwave frequency band."
}
@article{Xu2009722,
title = "Recombination dynamics of single quantum dots in a fiber system at telecommunication wavelengths",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "722 - 724",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005144",
author = "Xiulai Xu and Frederic Brossard and Kiyotaka Hammura and David A. Williams and B. Alloing and L.H. Li and Andrea Fiore",
keywords = "‘Plug and play’ single-photon sources",
keywords = "Lifetime dynamics",
keywords = "Telecommunication wavelengths",
abstract = "Coupling the emitted light from single quantum dots into an optic fiber has been demonstrated as a ‘plug and play’ single-photon source. In this work, lifetime dynamics measurements were performed with two time-delayed femtosecond optical pulses at different wavelengths. When the energy of the pumping light is less than the energy of the wetting layer (i.e. quasi-resonant excitation), the single-photon sources can be operated at a speed of 1 GHz."
}
@article{Greenaway2009725,
title = "Using sound to generate ultra-high-frequency electron dynamics in superlattices",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "725 - 727",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.051",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005156",
author = "M.T. Greenaway and A.G. Balanov and D. Fowler and A.J. Kent and T.M. Fromhold",
keywords = "Superlattice",
keywords = "Phonon wave",
keywords = "Electron transport",
keywords = "Bloch oscillations",
abstract = "We show that a phonon wave propagating through a semiconductor superlattice can induce a charge current even when no static electric field is applied. When the energy amplitude of the phonon wave is less than the width of the lowest superlattice miniband, we find strong resonant enhancement of electron transport, accompanied by very high frequency oscillations of the electron orbits. In this regime, the phonon wave drags the electrons through the superlattice, causing them to undergo quasi-periodic trajectories with a single dominant temporal frequency several orders of magnitude higher than that of the phonon deformation wave itself. This transformation of GHz frequency wave motion into highly coherent THz frequency electron dynamics provides a mechanism for frequency up-conversion, with a multiplication factor of ≈ 20 in our present samples. For phonon wave amplitudes higher than the miniband width, the electrons perform Bloch-like oscillations, which dramatically suppresses transport."
}
@article{Rogacheva2009728,
title = "Quantum size effects and transport phenomena in thin Bi layers",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "728 - 730",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005168",
author = "E.I. Rogacheva and S.G. Lyubchenko and O.N. Nashchekina and A.V. Meriuts and M.S. Dresselhaus",
keywords = "Bismuth",
keywords = "Thin film",
keywords = "Transport properties",
keywords = "Quantum size effects",
abstract = "For thin Bi films with thicknesses d=10–60 nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity, and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period Δd=(5±1) nm have been observed in the thickness range d=25–60 nm and attributed to quantization of the energy spectrum of holes. It has been suggested that a deep minimum observed in the thickness dependences of the kinetic coefficients at d∼25 nm is connected with the manifestation of the electronic spectrum quantization and/or manifestation of a semimetal–semiconductor transition. The experimental data are in good agreement with the results of theoretical calculations."
}
@article{Mil'shtein2009731,
title = "Patterning 0.05 μm gate on pHEMT",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "731 - 732",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800517X",
author = "S. Mil'shtein and P. Kurlawala",
keywords = "Photo-lithography",
keywords = "Patterning",
keywords = "Wet etching",
keywords = "Ultrasonic agitation",
keywords = "pHEMT",
abstract = "The pseudomorphic high electron mobility transistor (pHEMT) was designed with 0.05 μm gate. The reduced size of the gate provides immediate advantage for high frequency, better linearity and higher breakdown voltage. The design of extremely small gate, below resolution of conventional optical lithography, was achieved by developing a process of directional wet etching enhanced by ultrasonic agitation (UA). Starting with regular optical window we applied selective etching along the prescribed direction. To provide constant rate and to avoid stagnation of etching in a narrow space the capillar forces were destroyed by UA."
}
@article{Clément2009733,
title = "Dynamic equilibrium of magnetic ions in Cd(Mn)Te quantum dots",
journal = "Microelectronics Journal",
volume = "40",
number = "4–5",
pages = "733 - 735",
year = "2009",
note = "European Nano Systems (ENS 2007) International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.11.039",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005181",
author = "T. Clément and D. Ferrand and L. Besombes and H. Boukari and H. Mariette",
keywords = "Quantum dots",
keywords = "Magnetic semiconductors",
keywords = "Spin effects",
abstract = "Magneto optical micro-spectroscopy allowed us to access the magnetic field dependency of the photoluminescence of Cd(Mn)Te/ZnTe single quantum dots. We report a strongly non-linear behavior of the exciton and biexciton energies as a function of magnetic field which clearly differs from the expected and usually observed giant Zeeman effect. We demonstrate that the existence of a positive feedback loop between photocarriers and Mn spins results in heating the Mn system and can explain the observed phenomenon. This shows that controlling the coupling of the dot with its environment is a corner stone to achieve spin manipulation in quantum dots."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "IFC - ",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00030-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000305",
key = "tagkey2009IFC"
}
@article{Abdelkader2009385,
title = "Preface: Workshop of recent advances on low dimensional structures and devices (WRA-LDSD)",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "385 - ",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002371",
author = "Abdelkader and Saidane"
}
@article{Wang2009386,
title = "Dilute nitrides and 1.3 μm GaInNAs quantum well lasers on GaAs",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "386 - 391",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002383",
author = "S.M. Wang and H. Zhao and G. Adolfsson and Y.Q. Wei and Q.X. Zhao and J.S. Gustavsson and M. Sadeghi and A. Larsson",
keywords = "Dilute nitride",
keywords = "1.3 μm",
keywords = "GaInNAs",
keywords = "GaAs",
keywords = "Laser",
abstract = "We present epitaxial growth of GaInNAs on GaAs by molecular beam epitaxy (MBE) using analog, digital and N irradiation methods. It is possible to realize GaInNAs quantum wells (QWs) with a maximum substitutional N concentration up to 6% and a strong light emission up to 1.71 μm at 300 K. High quality 1.3 μm GaInNAs multiple QW edge emitting laser diodes have been demonstrated. The threshold current density (for a cavity of 100×1000 μm2) is 300, 300, 400 and 940 A/cm2 for single, double, triple and quadruple QW lasers, respectively. The maximum 3 dB bandwidth reaches 17 GHz and high-speed transmission at 10 Gb/s up to 110 °C under a constant voltage has been demonstrated."
}
@article{Kudrawiec2009392,
title = "Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "392 - 395",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002395",
author = "R. Kudrawiec and M. Gladysiewicz and M. Motyka and J. Misiewicz and G. Cywiński and M. Siekacz and C. Skierbiszewski",
keywords = "GaN",
keywords = "Quantum wells",
keywords = "Electroreflectance",
abstract = "Contactless electroreflectance (CER) has been applied to investigate the energy and broadening of the fundamental transition for GaInN/AlInN multi quantum wells (MQWs) with the width varies from 1.3 to 1.8 nm. It has been found that the broadening of GaInN bulk-like transition equals ∼280 meV and increases significantly going to GaInN quantum wells (QWs). In order to explain experimental data, a simple theoretical analysis has been performed. It has been shown that the observed variation of broadening for the fundamental transition is associated with the QW width fluctuations. In addition, it has been estimated that the maximal width fluctuations in these MQWs equal ∼2 ML (∼30% of the QW width). Such a significant QW width fluctuations are attributed to the incorporation of indium atoms into this material system."
}
@article{Royall2009396,
title = "Dilute nitride n-i-p-i solar cells",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "396 - 398",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002401",
author = "B. Royall and N. Balkan",
keywords = "n-i-p-i doping supperlattice",
keywords = "GaInNAs solar cell",
abstract = "We propose a novel GaInNAs n-i-p-i doping superlattice to over come the problems of short minority carrier life times and low-diffusion lengths which lower the efficiency in conventional GaInNAs solar cells. A prototype structure is studied using the commercial simulation package DESSIS and the calculations of photo-generation, current density were carried out when the device is illuminated by an optical beam of a single wavelength below the band gap cut off. The I–V characteristics were simulated when both the samples were illuminated and in darkness."
}
@article{Buckle2009399,
title = "Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "399 - 402",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002413",
author = "L. Buckle and S.D. Coomber and T. Ashley and P.H. Jefferson and D. Walker and T.D. Veal and C.F. McConville and P.A. Thomas",
keywords = "Dilute nitride",
keywords = "Indium antimonide",
keywords = "InSb",
keywords = "Gallium antimonide",
keywords = "GaSb",
keywords = "Infrared",
keywords = "MWIR",
keywords = "LWIR",
abstract = "The addition of small amounts of nitrogen to III–V semiconductors leads to a large degree of band gap bowing, giving rise to band-gaps smaller than in the associated binary materials. The incorporation of active nitrogen has been previously demonstrated for InNxSb1−x (x⩽0.7%) and GaNxSb1−x (x⩽1.75%) material; however, the as-grown carrier concentrations precluded incorporation into a device structure. Here we report the reduction in the as-grown carrier concentration in InNSb by annealing, whilst retaining the active nitrogen content. FTIR absorption measurements show the first direct experimental evidence of narrowing of the InSb bandgap due to nitrogen incorporation. As an alternative route to defect reduction and device compatible material we report on the growth of Ga1−yInyNxSb1−x with 0⩽y⩽30% and x=1.6±0.2% and demonstrate near lattice matching of the material to GaSb."
}
@article{Sun2009403,
title = "Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "403 - 405",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002425",
author = "Y. Sun and N. Balkan and A. Erol and M.C. Arikan",
keywords = "GaInNAs",
keywords = "Two-dimension electron gas",
keywords = "Mobility",
abstract = "We present electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum well structures. The Hall mobility of electrons in the n-type material decreases dramatically with increasing nitrogen composition. The mobility of 2D holes in p-modulation-doped quantum wells is significantly higher than that of 2D electrons in n-modulation-doped material with similar nitrogen concentration. The mobility of 2D electrons is discussed using a S-matrix model for N-related alloy scattering. The results indicate that the electron mobility is intrinsically limited by scattering from nitrogen complexes. The high mobility of 2D holes is explained in terms of negligible effect of nitrogen on valance band and the absence of scattering with localized nitrogen complexes."
}
@article{Yılmaz2009406,
title = "Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "406 - 409",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002437",
author = "M. Yılmaz and Y. Sun and N. Balkan and B. Ulug and A. Ulug and M. Sopanen and O. Reentilä and M. Mattila and C. Fontaine and A. Arnoult",
keywords = "Photoluminescence",
keywords = "GaInNAs/GaAs QWs",
keywords = "Modulation doping",
abstract = "Experimental results concerning the steady-state photoluminescence (PL) studies in n and p modulation doped and undoped GaInNAs/GaAs quantum wells are presented. The effects of modulation, type of doping and nitrogen concentration on the PL and the temperature dependence of the band gap, carrier localization and non-radiative recombination are investigated. Increasing the nitrogen composition decreases energy band gap as expected. The n-type modulation doping eliminates most of the defect-related effects and blue shifts the energy band gap. However, the p-type doping gives rise to additional features in the PL spectra and red shifts energy band gap further compared to the n-type-doped material."
}
@article{Brannick2009410,
title = "Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "410 - 412",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002449",
author = "A. Brannick and N.A. Zakhleniuk and B.K. Ridley and L.F. Eastman and J.R. Shealy and W.J. Schaff",
keywords = "HEMT",
keywords = "Surface traps",
keywords = "Hydrodynamic",
keywords = "AlGaN",
keywords = "Modelling",
abstract = "Computer simulation of an AlGaN/GaN HEMT is carried out using commercially available software DESSIS. Traps located at the top of the AlGaN layer have been identified as being the primary source of electrons in the AlGaN/GaN HEMT. Recent experiments have focused on their role in HEMT performance with regard to the virtual gate effect and current collapse. In this work, analysis is carried out on these devices through the development of two different models designed to describe the 2DEG formation. Simulation of these models using the hydrodynamic model, which takes into account heating of the electrons, has been carried out to provide a more detailed understanding of the role of surface traps."
}
@article{Lisesivdin2009413,
title = "A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "413 - 417",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002450",
author = "S.B. Lisesivdin and N. Balkan and E. Ozbay",
keywords = "Parallel conduction",
keywords = "Mixed conduction",
keywords = "Multi-carrier",
keywords = "MODFET",
keywords = "HEMT",
keywords = "QMSA",
abstract = "We report a simple method to extract the mobility and sheet carrier densities of conduction channels in conventional modulation doped field-effect transistor (MODFET) structures and unintentionally doped GaN-based high-electron mobility transistor (HEMT) structures for a special case. Extraction of the conduction channels from the magnetic field-dependent data can present number of problems; even the most recent methods encounter great difficulties. For the GaN-based HEMT structures which have lower mobilities and larger effective masses than that of GaAs-based counterparts, these difficulties become more prominent. In this study, we describe a simple method for magnetotransport analysis to extract conduction channels successfully for a special case that is commonly encountered: one bulk channel and one two-dimensional electron gas (2DEG) channel. Advantage of this method is mainly its simplicity. The analysis can be done with only two magnetic field-dependent measurements per temperature step. The method is applied to the magnetotransport results of an unintentionally doped AlGaN/AlN/GaN/AlN heterostructure over a temperature range of 29–350 K and in a magnetic field range of 0–1.5 T (μB<1). The results are then compared with those obtained using a commercial package for these calculations namely: quantitative mobility spectrum analysis (QMSA)."
}
@article{Molina2009418,
title = "Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "418 - 420",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002462",
author = "A. Molina and A. García-Cristóbal and A. Cantarero",
keywords = "Tight-binding",
keywords = "Semiconductors III–V",
keywords = "Quantum well",
keywords = "Nitrides",
abstract = "The electronic structure of wurtzite semiconductor superlattices (SLs) and quantum wells (QWs) is calculated by using the empirical tight-binding method. The basis used consists of four orbitals per atom ( sp 3 model), and the calculations include the spin–orbit coupling as well as the strain and electric polarization effects. We focus our study on GaN/AlN QWs wells grown both in polar (C) and nonpolar (A) directions. The band structure, wave functions and optical absorption spectrum are obtained and compared for both cases."
}
@article{Alemu2009421,
title = "Opportunities in dilute nitride III–V semiconductors quantum confined p–i–n solar cells for single carrier resonant tunneling",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "421 - 423",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.035",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002474",
author = "A. Alemu and A. Freundlich",
keywords = "Solar cell",
keywords = "Quantum confined",
keywords = "Escape",
keywords = "Resonant tunneling",
keywords = "III–V",
keywords = "Dilute nitride",
abstract = "Stunning theoretical efficiencies have been predicted for quantum-confined solar cells. However, practical realizations remain inefficient as these devices suffer from an inherent difficulty in the extraction of photo-generated carriers from the confined states. Leveraging on the shallow valence band offset of dilute nitrides and using a carefully chosen material system and device design, we show the possibility of circumventing this problem by separating the optimization of the valence and conduction band and reducing the issue to a single particle problem. Band structure calculations including strain effects, band anti-crossing models and transfer matrix methods are used to theoretically demonstrate optimum conditions for enhanced vertical transport. High-electron tunneling escape probability, together with a free movement of quasi-3D holes, is predicted to result in enhanced PV device performance. Furthermore, the increase in electron effective mass due to the incorporation of N translates in enhanced absorptive properties, ideal for PV application."
}
@article{Valenzuela2009424,
title = "Quantum well model of a conjugated polymer heterostructure solar cell",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "424 - 426",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.069",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002486",
author = "J. Valenzuela and S. Mil'shtein",
keywords = "Polymer",
keywords = "Heterostructure",
keywords = "Solar cells",
keywords = "Quantum wells",
abstract = "In current study we analyzed the performance of a conjugated polymer heterostructured solar cell using quantum well representation for 100 Å thin polymer layers. The electrical field across the polymer layer is extremely strong to dissociate all excitons generated by sunlight. The behavior of free electrons appearing as a result of exciton dissociation was analyzed using wavefunctions and set of available energy levels. We came to the conclusion that small but finite probability exists to collect free electrons by the anode of the solar cell. The analyzed device was comprised of layers of bulk heterojunctions, namely, 100 nm layers of poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1-4-phenylene vinylene]:phenyl C61-butyric acid methylester MDMO–PPV:PCBM (1:4), (poly-3-hexylthiophene): phenyl C61-butyric acid methylester P3HT:PCBM (1:1) and poly[2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopen[2,1-b;3,4-b′]dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)] PCPDTBT:PCBM (1:3). Set of these layers are designed to be connected using transparent cathodes of lithium fluoride/aluminium/gold LiF/Al/Au, which are compatible with PCBM LUMO."
}
@article{Anani2009427,
title = "High-grade efficiency III-nitrides semiconductor solar cell",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "427 - 434",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002498",
author = "Macho Anani and Christian Mathieu and Mohammed Khadraoui and Zouaoui Chama and Sara Lebid and Youcef Amar",
keywords = "Solar cell",
keywords = "Renewable energy",
keywords = "High efficiency",
abstract = "Solar energy constitutes a widely available and further free energy. Several techniques have been used to permit a convenient exploitation of this clean energy, consisting in trying to extract the maximal amount of energy from simple devices. Therefore, these techniques suffer from reduced efficiency ratio, and they are neither well exploited nor developed.
In this work, III-Nitrides semiconductors have been used instead of classical silicon. They possess the faculty to work in the maximum of the solar emission spectrum, hence offering a maximal efficiency, and also, due to their high energy gap, the surface reflection materialized by the reflectance is optimally reduced, always comparing with actual silicon-made devices.
The computational methods used have shown that the theoretical efficiency obtained, in our paper, is near about 35%, depending greatly on the semiconductor purity."
}
@article{Axelevitch2009435,
title = "Novel silicon high sensitive photonic sensor",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "435 - 438",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002504",
author = "A. Axelevitch and G. Golan",
keywords = "Silicon photonic sensor",
keywords = "Lateral electrical transport",
abstract = "Light depended resistors (LDR) or photoresistors are semiconductor devices that are changing resistance under illumination. These devices have many applications in industrial controls: item counters, presence and proximity sensors, flame detectors, photometric devices, etc. If the light falling on the device has energy which is greater than the bandgap of the semiconductor, photons absorbed by the semiconductor excite electron–hole pairs which result in lowering the resistance of the semiconductor. Generally, these devices are made of semiconductors such as CdS or CdSe using a thin film technology, since they have traps and misfits in their atomic structure, leading to high dark current and noise.
In this work, we describe a novel approach for a novel family of high sensitive light detectors made of single-crystalline silicon. Basic sensor was built in a flat shape providing lateral electrical transport of excited charged carriers. Simple laboratory methods were used to diffuse impurities on both sides of the sensor. The sample shows high sensitivity due to light intensity variation from dark to strong light (∼96,000 lx). A 30 times variation in the sample resistance was obtained."
}
@article{Miranda2009439,
title = "Modelling of electronic and phononic states of Ge nanostructures",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "439 - 441",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002516",
author = "A. Miranda and M. Cruz-Irisson and C. Wang",
keywords = "Porous germanium",
keywords = "Germanium nanowires",
keywords = "Tight-binding model",
keywords = "Raman response",
abstract = "The electronic band structure of ordered porous germanium (PGe) and germanium nanowires (GeNW) are studied by means of an sp3s* tight-binding approach. Within the linear response theory, a local bond-polarization model based on the displacement–displacement Green's function and the Born potential including central and non-central interatomic forces are used to investigate the Raman response and the phonon band structure of PGe and GeNW. This study is carried out by means of a supercell model, in which along the [0 0 1] direction empty-column pores and nanowires are constructed preserving the crystalline Ge atomic structure. An advantage of this model is the interconnection between Ge nanocrystals in PGe and then, all the electronic and phononic states are delocalized. However, the results of both elementary excitations show a clear quantum confinement signature. Moreover, the highest-energy Raman peak in both PGe and GeNW shows a shift towards lower frequencies with respect to that of bulk crystalline Ge, in good agreement with the experimental data."
}
@article{Jabeen2009442,
title = "Growth of III–V semiconductor nanowires by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "442 - 445",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002528",
author = "F. Jabeen and S. Rubini and F. Martelli",
keywords = "GaAs",
keywords = "InAs",
keywords = "Nanowires",
keywords = "Molecular beam epitaxy",
keywords = "Electron microscopy",
abstract = "We present here the growth of GaAs, InAs and InGaAs nanowires by molecular beam epitaxy. The nanowires have been grown on different substrates [GaAs(0 0 1), GaAs(1 1 1), SiO2 and Si(1 1 1)] using gold as the growth catalyst. We show how the different substrates affect the results in terms of nanowire density and morphology. We also show that the growth temperature for the InGaAs nanowires has to be carefully chosen to obtain homogeneous alloys."
}
@article{Li2009446,
title = "Dielectric mismatch effect on coupled impurity states in a freestanding nanowire",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "446 - 448",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.028",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800253X",
author = "Bin Li and B. Partoens and F.M. Peeters and W. Magnus",
keywords = "Nanowire",
keywords = "Bonding state",
keywords = "Coupled impurities",
keywords = "Binding energy",
keywords = "Dielectric mismatch",
keywords = "Finite element method",
abstract = "We studied the coupled impurity states in a freestanding semiconductor nanowire (NW), within the effective mass approximation and including the effect of the dielectric mismatch, by using finite element method. Bonding and anti-bonding states are found and their energies converge with increasing distance d i between the two impurities. The dependence of the binding energy on the wire radius R and the distance d i between the two impurities is investigated, and we compare it with the result of a freestanding NW that contains a single impurity."
}
@article{Medvid2009449,
title = "Laser-induced self-organization of nano-wires on SiO2/Si interface",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "449 - 451",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.073",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002541",
author = "Artur Medvid and Igor Dmitruk and Pavels Onufrijevs and Iryna Pundyk",
keywords = "Graded band gap Si",
keywords = "SiO2/Si",
keywords = "Laser radiation",
keywords = "Nano-hills",
keywords = "Photoluminescence",
keywords = "AFM",
abstract = "Original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO2/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterized by a strong photoluminescence in the visible range of spectrum with a shoulder extended to the long-wave part of the spectrum. The feature is explained by the quantum confinement effect in nano-hills–nano-wires of gradually changing diameter."
}
@article{DasKanungo2009452,
title = "Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "40",
number = "3",
pages = "452 - 455",
year = "2009",
note = "Workshop of Recent Advances on Low Dimensional Structures and Devices (WRA-LDSD)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002553",
author = "P. Das Kanungo and A. Wolfsteller and N.D. Zakharov and P. Werner and U. Gösele",
keywords = "Nanowire",
keywords = "Silicon-Germanium",
keywords = "MBE",
abstract = "Electrical properties of epitaxial single-crystalline Si/SiGe axial heterostructure nanowires (NWs) on Si〈1 1 1〉 substrate were measured by contacting individual NWs with a micro-manipulator inside an scanning electron microscope. The NWs were grown by incorporating compositionally graded Si1−xGex segments of a few nm thicknesses in the Si NWs by molecular beam epitaxy. The I–V characteristics of the Si/SiGe heterostructure NWs showed Ohmic behavior. However, the resistivity of a typical heterostructure NW was found to be significantly low for the carrier concentration extracted from the simulated band diagram. Similarly grown pure Si and Ge NWs showed the same behavior as well, although the I–V curve of a typical Si NW was rectifying in nature instead of Ohmic. It was argued that this enhanced electrical conductivities of the NWs come from the current conduction through their surface states and the Ge or Si/SiGe NWs are more strongly influenced by the surface than the Si ones."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "IFC - ",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/S0026-2692(09)00006-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269209000068",
key = "tagkey2009IFC"
}
@article{Lischka2009203,
title = "Wide band gap semiconductor nanostructures for optoelectronic applications",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "203 - ",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.009",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800373X",
author = "K. Lischka and A. Waag and H. Mariette and J. Neugebauer"
}
@article{DJ2009204,
title = "Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "204 - 209",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.036",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003741",
author = "D.J. and As",
keywords = "Cubic group-III nitrides",
keywords = "MBE",
keywords = "Intersubband absorption",
keywords = "Cubic HFETs",
abstract = "Molecular beam epitaxy (MBE) of cubic group-III nitrides is a direct way to eliminate the polarization effects which inherently limits the performance of optoelectronic devices containing quantum well or quantum dot active regions. In this contribution the latest achievement in the MBE of phase-pure cubic GaN, AlN, InN and their alloys will be reviewed. A new reflected high-energy electron beam (RHEED) control technique enables to carefully adjust stoichiometry and to severely reduce the surface roughness, which is important for any hetero-interface. The structural, optical and electrical properties of cubic nitrides and AlGaN/GaN will be presented. We show that no polarization field exists in cubic nitrides and demonstrate 1.55 μm intersubband absorption in cubic AlN/GaN superlattices. Further the progress towards the development and fabrication of cubic hetero-junction field effect transistors (HFETs) is discussed."
}
@article{Thonke2009210,
title = "The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "210 - 214",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.031",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003753",
author = "K. Thonke and M. Schirra and R. Schneider and A. Reiser and G.M. Prinz and M. Feneberg and J. Biskupek and U. Kaiser and R. Sauer",
keywords = "ZnO",
keywords = "Stacking faults",
keywords = "Cathodoluminescence",
keywords = "TEM",
abstract = "An emission band at 3.31 eV is frequently observed in low-temperature photoluminescence (PL) measurements on ZnO p-doped with group-V elements, and also on nominally undoped ZnO layers and nanostructures. It has alternatively been ascribed to LO- or TO-phonon replicas of free excitons, to acceptor-bound excitons, to donor–acceptor pair transitions, to two-electron satellites of donor-bound excitons, or to free-to-bound transitions. This band frequently dominates the PL of ZnO nanostructures and layers at room temperature. Annealing leads to drastic changes in its intensity.
We report on low-temperature cathodoluminescence measurements with very high spatial resolution and high-resolution transmission electron microscope investigations carried out on the same pieces of hetero-epitaxial ZnO samples with unusual layer orientation. These data allow us to correlate this emission unambiguously with c-plane stacking faults. The emission is found to be due to the recombination of a free electron with a hole bound to a relatively shallow acceptor state ≈130 meV above the valence band edge. Locally, these acceptor states occur in high concentrations of up to some 1018 cm−3, and thus lead to strong two-dimensional perturbations of the free carrier concentration. They have severe implications for the conductivity of layers and nanostructures in general, and on the interpretation of Hall and luminescence data in particular. Literature data are critically reviewed in the light of these findings."
}
@article{deVasconcellos2009215,
title = "Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "215 - 217",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.055",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003765",
author = "S. Michaelis de Vasconcellos and A. Pawlis and C. Arens and M. Panfilova and A. Zrenner and D. Schikora and K. Lischka",
keywords = "CdSe quantum dots",
keywords = "Photodiode",
keywords = "Stark effect",
abstract = "We have investigated the properties of neutral and charged excitons in single CdSe/ZnSe QD photodiodes by μ-photoluminescence spectroscopy. By applying a bias voltage, we have been able to control the number of electrons in a single QD by shifting the energy levels of the QD with respect to the Fermi level in the back contact. Also the quantum-confined Stark effect was observed as a function of the applied electric field."
}
@article{Dmytruk2009218,
title = "ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "218 - 220",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003777",
author = "A. Dmytruk and I. Dmitruk and I. Blonskyy and R. Belosludov and Y. Kawazoe and A. Kasuya",
keywords = "Zinc oxide",
keywords = "Cluster",
keywords = "Magic number",
keywords = "Time-of-flight mass spectroscopy",
abstract = "Zinc oxide clusters have been produced by laser ablation of bulk powder zinc peroxide in vacuum and investigated by time-of-flight mass spectroscopy. Experimental results revealed unpredicted and hitherto unknown (ZnO)n clusters of enhanced stability (“magic clusters”) at n=34, 60 and 78. Cage-like structures for the magic clusters have been suggested, supported by first-principles calculations."
}
@article{Panfilova2009221,
title = "Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "221 - 223",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.056",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003789",
author = "M. Panfilova and A. Pawlis and C. Arens and S. Michaelis de Vasconcellos and G. Berth and K.P. Hüsch and V. Wiedemeier and A. Zrenner and K. Lischka",
keywords = "Raman",
keywords = "Photoluminescence",
keywords = "Microdisc",
keywords = "ZnSe",
abstract = "Semiconductor microdiscs are promising for applications in photonics and quantum-information processing, such as efficient solid-state-based single-photon emitters. Strain in the multilayer structure of those devices has an important influence on their optical properties. We present measurements of the strain distribution in ZnMgSe/ZnSe microdiscs by means of micro-photoluminescence and micro-Raman imaging. Photoluminescence measurements of microdiscs reveal substantially broadened emission lines with a shift to lower energy at the undercut part of microdiscs, indicating local relaxation in this area. The distribution of the strain in the microdiscs is obtained from an imaging micro-Raman analysis, revealing that the freestanding part of the microdiscs is free of defects."
}
@article{LatuRomain2009224,
title = "Optical and electrical characterizations of vertically integrated ZnO nanowires",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "224 - 228",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.046",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003790",
author = "E. Latu-Romain and P. Gilet and G. Feuillet and P. Noel and J. Garcia and F. Lévy and A. Chelnokov",
keywords = "ZnO nanowires",
keywords = "Integration technology",
keywords = "Photoconductivity",
keywords = "Scanning spread resistance microscopy",
abstract = "We report on the integration and characterizations of vertically aligned ZnO nanowires (NWs). Technological processes have been developed both for mineral and organic planarizations with suitable morphologies. Optical and electrical characterizations of these integrated NWs have been performed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and integrated NWs has shown no significant impact of the integration process on the crystal quality of the NWs. Photoconducting properties in the UV–visible range have been investigated through collective electrical contacts. A small increase of resistivity in ZnO NWs under sub-bandgap illumination has been observed and discussed. The electrical transport properties of vertically integrated single NWs have also been investigated by scanning spread resistance microscopy (SSRM). Surface depletion layers in ZnO NWs have been evidenced."
}
@article{Karpyna2009229,
title = "Electron field emission from ZnO self-organized nanostructures and doped ZnO:Ga nanostructured films",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "229 - 231",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003807",
author = "V.A. Karpyna and A.A. Evtukh and M.O. Semenenko and V.I. Lazorenko and G.V. Lashkarev and V.D. Khranovskyy and R. Yakimova and D.A. Fedorchenko",
keywords = "Field emission",
keywords = "ZnO",
keywords = "Nanostructures",
keywords = "Cold cathodes",
abstract = "Self-organized ZnO nanostructures were grown by thermal decomposition of metalorganic precursors as well as by carbothermal reduction process. Nanostructured undoped and gallium-doped ZnO nanostructured films were deposited by plasma-enhanced chemical vapor deposition from metalorganic compounds. Electron field emission follows Fowler–Nordheim equation. Efficient electron emission was obtained from self-organized nanostructures due to their geometric shape. Enhanced field emission from ZnO:Ga nanostructured films in comparison with undoped ZnO films is obliged to lowering work function at doping by gallium."
}
@article{Zhu2009232,
title = "Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "232 - 235",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.042",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003819",
author = "J.J. Zhu and L. Vines and T. Aaltonen and A. Yu. Kuznetsov",
keywords = "ZnO",
keywords = "MOVPE",
keywords = "Doping",
keywords = "Defect complexes",
abstract = "Nitrogen-doped ZnO films with preferential (0 0 0 1) orientation were synthesized on c-Al2O3 and Si substrates by metal organic vapor phase epitaxy (MOVPE) using tertiary butanol (t-BuOH) and/or N2O as oxidizers for diethylzinc (DEZ). A striking correlation between nitrogen and carbon incorporation into ZnO was revealed by concentration versus depth profiling employing secondary ion mass spectrometry (SIMS), consistently with recently reported simulations of nitrogen–carbon complexing."
}
@article{Trani2009236,
title = "Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "236 - 238",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.060",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003820",
author = "F. Trani and M. Causà and S. Lettieri and A. Setaro and D. Ninno and V. Barone and P. Maddalena",
keywords = "Oxygen vacancies",
keywords = "Metal oxides",
keywords = "Nanobelts",
abstract = "The role of surface oxygen vacancies in the optical properties of tin dioxide nanobelts is investigated in this paper. Using a first-principles approach, based on the density functional theory combined to a very accurate exchange correlation functional, we characterize SnO2 (1 0 1), that is the nanobelt largest surface. We show that the presence of surface oxygen vacancies leads to the appearance of (i) occupied states located at about 1 eV above the valence band and (ii) unoccupied states lying in resonance with the conduction band. Photoluminescence characterization performed on samples of SnO2 nanobelts at low temperature shows that the basic spectral features of luminescence are in excellent agreement with theoretical predictions."
}
@article{Petersen2009239,
title = "Optical properties of ZnO thin films prepared by sol–gel process",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "239 - 241",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.061",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003832",
author = "J. Petersen and C. Brimont and M. Gallart and O. Crégut and G. Schmerber and P. Gilliot and B. Hönerlage and C. Ulhaq-Bouillet and J.L. Rehspringer and C. Leuvrey and S. Colis and A. Slaoui and A. Dinia",
keywords = "ZnO",
keywords = "Photoluminescence",
keywords = "Sol–gel",
keywords = "Thin film",
keywords = "Excitons",
abstract = "The present study focused on ZnO thin films fabricated by sol–gel process and spin coated onto Si (1 0 0) and quartz substrates. ZnO thin films have a hexagonal würtzite structure with a grain diameter about 50 nm. Optical properties were determined by photoluminescence (PL) and absorption spectroscopy. The absorption spectrum is dominated by a sharp excitonic peak at room and low temperatures. At room temperature, two transitions were observed by PL. One near to the prohibited energy band in ultraviolet (UV) region and the other centered at 640 nm, characteristic of the electronic defects in the band-gap. The spectrum at 6 K is dominated by donor-bound exciton lines and donor–acceptor pair transition. LO-phonon replica and two-electron satellite transitions are also observed. These optical characteristics are a signature of high-quality thin films."
}
@article{Rosina2009242,
title = "Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "242 - 245",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003844",
author = "M. Rosina and P. Ferret and P.-H. Jouneau and I.-C. Robin and F. Levy and G. Feuillet and M. Lafossas",
keywords = "MOCVD",
keywords = "Zinc oxide",
keywords = "Nanorod",
keywords = "Nanowire",
keywords = "Growth",
abstract = "We report on ZnO nanorods grown by catalyst-free metal-organic chemical vapour deposition (MOCVD) in a commercial Epigress reactor using diethylzinc and N2O as precursors. Well-aligned ZnO nanorods with uniform diameter, length and density have been grown perpendicularly to the sapphire (0 0 0 1) surface. Scanning electron microscopy (SEM) has been used to observe the morphology of the ZnO nanorods and X-ray diffraction and transmission electron microscopy (TEM) to investigate the crystalline structure of the nanorods. TEM observation as well as photoluminescence measurements confirm the very good crystalline quality of the nanorods. SEM observation on samples that have been prepared with various deposition times has been used in order to investigate the growth mechanism. Three types of ZnO morphologies have been identified: a thin two-dimensional ZnO layer formed at the sapphire surface, covered by three-dimensional hexagonal-shaped islands and hexagonal nanorods on top of them."
}
@article{Bieber2009246,
title = "Structural and magnetic study of hard–soft systems with ZnO barrier grown by pulsed laser deposition",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "246 - 249",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.044",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003856",
author = "H. Bieber and G. Versini and S. Barre and J.-L. Loison and G. Schmerber and C. Ulhaq-Bouillet and S. Colis and A. Dinia",
keywords = "ZnO tunnel barrier",
keywords = "Pulsed laser deposition",
keywords = "Thin film",
keywords = "Coupling",
abstract = "Hard–soft systems with magnetic transition metal electrodes and ZnO barrier of variable thickness have been epitaxially grown by pulsed laser deposition on MgO(1 0 0) substrates. The structural reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) analysis have shown an epitaxial growth of the CoFe2 bottom electrode, the permalloy top electrode and of the ZnO barrier. Magnetic measurements have shown a clear plateau with a separate reversal of both magnetizations of the top and bottom electrodes, which is promising for further tunnel magnetoresistance measurements. A ferromagnetic coupling between the magnetic electrodes through the barrier has been observed."
}
@article{Robin2009250,
title = "Growth and characterization of ZnO nanowires on p-type GaN",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "250 - 252",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003868",
author = "I.C. Robin and M. Lafossas and J. Garcia and M. Rosina and E. Latu-Romain and P. Ferret and P. Gilet and A. Tchelnokov and M. Azize and J. Eymery and G. Feuillet",
keywords = "MOCVD",
keywords = "Zinc oxide",
keywords = "ZnO",
keywords = "Nanorod",
keywords = "Nanowire",
keywords = "Photoluminescence",
keywords = "Time-resolved photoluminescence",
keywords = "Electroluminescence",
abstract = "ZnO nanowires were grown by catalyst-free metal-organic vapour-phase epitaxy on top of a p-type GaN buffer. The optical properties of the ZnO nanowires were investigated by temperature-dependent and time-resolved photoluminescence and compared to those of ZnO nanowires directly grown on sapphire. The luminescence intensity decrease with temperature of the nanowires grown on GaN reveals an original behavior since it is constant over 120 K, showing the existence of strong localization centers. In addition, the temperature-dependent decay time measurements indicate a lower density of non-radiative channels for the nanowires grown on GaN."
}
@article{Tribu2009253,
title = "Bright CdSe quantum dot inserted in single ZnSe nanowires",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "253 - 255",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.045",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800387X",
author = "A. Tribu and G. Sallen and T. Aichele and C. Bougerol and R. André and J.P. Poizat and S. Tatarenko and K. Kheng",
keywords = "Single nanowire",
keywords = "Two-step process",
keywords = "CdSe",
keywords = "ZnSe",
keywords = "Single nanowire heterostructures",
keywords = "Single NW",
keywords = "Single QD",
keywords = "Single quantum dot",
keywords = "Polarisation",
keywords = "Antibunching",
keywords = "Correlation measurement",
keywords = "Micro photoluminescence",
keywords = "μPL",
keywords = "Time-resolved photoluminescence",
keywords = "TRPL",
abstract = "We report the evidence of CdSe quantum dot (QD) insertion in single defect-free ZnSe nanowire. These nanowires have been grown by molecular beam epitaxy in vapour–liquid–solid growth mode catalysed with gold particles. We developed a two-step process allowing us to grow very thin (from 15 to 5 nm) defect-free ZnSe nanowire on top of a nanoneedle, where all defects are localised. The CdSe QDs are incorporated to the defect-free nanowires part. Owing to the extraction efficiency of the nanowires and the reduced number of stacking fault defects in the two-step-process nanowires, a very efficient photoluminescence is observed even on isolated single nanowire. Time-resolved photoluminescence and correlation photon give evidences that the bright photon emission is related to the CdSe QD."
}
@article{Pawlis2009256,
title = "Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "256 - 258",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003881",
author = "A. Pawlis and M. Panfilova and K. Sanaka and T.D. Ladd and D.J. As and K. Lischka and Y. Yamamoto",
keywords = "Microdisk resonator",
keywords = "Low-threshold lasing",
keywords = "Impurities",
keywords = "Nanostructures",
abstract = "Impurity states in semiconductors, in which two long-lived ground states can be optically coupled to a single excited state, provide a powerful mechanism for applications including lasing without inversion, electromagnetically induced transparency, and optically addressable quantum memory for quantum information processing. We report low-threshold lasing from fluorine-doped ZnMgSe/ZnSe quantum wells in microdisk cavities. The lasing mechanism was studied by power-dependent photoluminescence spectroscopy. Lasing thresholds lower than 50 W cm−2 were observed and the fraction of spontaneous emission contributed to the lasing modes was about β=0.03–0.1."
}
@article{Biswas2009259,
title = "Carbothermal reduction growth of ZnO nanostructures on sapphire—comparisons between graphite and activated charcoal powders",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "259 - 261",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003893",
author = "M. Biswas and E. McGlynn and M.O. Henry",
keywords = "ZnO",
keywords = "Growth",
keywords = "Nanostructures",
abstract = "Zinc oxide (ZnO) nanostructures were grown by the vapour phase transport (VPT) method on a-plane sapphire substrates via carbothermal reduction of ZnO powders with various carbon powders. Specifically, graphite powder and activated charcoal powder (of larger total surface area but similar mesh size) were used. ZnO nanostructures can be grown at lower temperatures (∼800 °C) using activated charcoal than those required using graphite powder. Furthermore, the morphologies of ZnO nanostructures obtained using activated charcoal were different to those obtained using graphite. At higher temperatures (∼950 °C), where well-aligned nanorods were obtained using graphite powder, no nanostructures were found using activated charcoal. In contrast to previous results on Si substrates we find that the effects on ZnO nanostructure growth on a-sapphire cannot be explained solely in terms of increased Zn vapour pressure due to the enhancement of the carbothermal reduction reaction rate by the high surface area activated charcoal."
}
@article{Dierre2009262,
title = "Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "262 - 264",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.012",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800390X",
author = "B. Dierre and X.L. Yuan and T. Sekiguchi",
keywords = "Cathodoluminescence",
keywords = "ZnO",
keywords = "Electron beam",
keywords = "Hydrogen",
abstract = "The effect of hydrogenation on the intensity evolution of ZnO single crystal under electron beam irradiation was investigated by cathodoluminescence (CL). Without hydrogenation, the ultraviolet (UV) emission for O-face decreases exponentially and reaches a constant value with e-beam irradiation, while that for Zn-face once increases and then decreases. The hydrogenation significantly increases the UV emission for both faces. On the other hand, the amplitude of the decreasing component of the O-face becomes larger, while the increasing component is not affected. These results suggest that hydrogen only affects the decreasing component of the UV intensity evolution."
}
@article{Belghazi2009265,
title = "Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique",
journal = "Microelectronics Journal",
volume = "40",
number = "2",
pages = "265 - 267",
year = "2009",
note = "Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.051",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003911",
author = "Y. Belghazi and M. Ait Aouaj and M. El Yadari and G. Schmerber and C. Ulhaq-Bouillet and C. Leuvrey and S. Colis and M. Abd-lefdil and A. Berrada and A. Dinia",
keywords = "Spray pyrolysis",
keywords = "ZnCoO",
keywords = "Thin films",
keywords = "Dilute magnetic semiconductors",
abstract = "The structure and the nature of magnetism of ZnO and Zn1−xCoxO (CZO) thin films (0⩽x⩽0.09) deposited on glass substrate at 450 °C by spray pyrolysis technique is investigated. All the CZO thin films have the ZnO wurtzite structure with a preferential orientation along the c-axis and had no impurity phase. This was also confirmed by transmission electron microscopy analysis. Transmission UV–visible spectroscopy showed that Co2+ was well substituted for the Zn2+ ions in the ZnO matrix. Magnetization measurements at low temperature show that CZO thin films present a paramagnetic behaviour and no sign of ferromagnetism."
}
@article{tagkey2009IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "IFC - ",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00578-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208005788",
key = "tagkey2009IFC"
}
@article{Mahamdi20091,
title = "Boron diffusion and activation in polysilicon multilayer films for P+ MOS structure: Characterization and modeling",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "1 - 4",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004412",
author = "R. Mahamdi and L. Saci and F. Mansour and P. Temple-Boyer and E. Scheid and L. Jalabert",
keywords = "Polysilicon",
keywords = "Diffusion",
keywords = "Activation",
keywords = "Model",
keywords = "SIMS profile",
abstract = "This work deals with in situ boron diffusion and activation in multilayer films: polysilicon (Poly1)/amorphous silicon (Poly2). These films are deposited by LPCVD technique. However, several heat treatments were carried in order to determine the optimal annealing conditions to suppress boron penetration from the gate to the substrate through the gate oxide in MOS structure. The boron concentration is monitored by secondary ion mass spectrometry (SIMS). To investigate SIMS profiles we proposed a model of boron diffusion into these multilayer structures. It is important to note that the parameter values of the studied films such as the diffusion coefficient, the activation percentage of boron as well as the acceleration rate of boron diffusion are deduced from adjustment of simulated profiles with experimental profiles. From these results, we inferred that the boron is electrically active and its distribution does not reach the oxide layer and consequently, the Poly2 may reduce the boron diffusion in optimal annealing conditions."
}
@article{Arefinia20095,
title = "Novel attributes in scaling issues of carbon nanotube field-effect transistors",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "5 - 9",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004734",
author = "Zahra Arefinia and Ali A. Orouji",
keywords = "Capacitance model",
keywords = "Carbon nanotube diameter",
keywords = "CNTFET",
keywords = "Gate oxide thickness",
abstract = "For the first time, we present a scaling study of carbon nanotube field-effect transistors (CNTFETs) using a two-dimensional model. We investigate the scaling issues in device performance focusing on transconductance characteristics, output characteristics, average velocity, Ion/Ioff ratio, subthreshold swing and drain-induced barrier lowering (DIBL) with different gate oxide thicknesses and carbon nanotube (CNT) diameters. We concluded that the Ion/Ioff ratio increases with the gate oxide thickness reduction and increase in the CNT diameter and lead to a high on-state current. Furthermore, leakage current reduces with decrease in the gate oxide thickness, but it becomes higher in CNTFETs with larger CNT diameter. Also, our results show the output conductance, transconductance, voltage gain and average electron velocity at the top of the barrier improve in CNTFETs with thinner gate oxide and larger CNT diameter. In addition, the investigation of short channel effects shows that CNTFETs with thinner gate oxide offer lower DIBL and subthreshold swing, but in the CNTFETs with larger CNT diameter DIBL and subthreshold swing become worse."
}
@article{Aissat200910,
title = "Low sensitivity to temperature compressive-strained structure quantum well laser Ga1−xInxAs1−yNy/GaAs",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "10 - 14",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800476X",
author = "A. Aissat and S. Nacer and M. Bensebti and J.P. Vilcot",
keywords = "Semiconductor",
keywords = "Optoelectronics",
keywords = "Laser diode",
keywords = "Strained quantum wells—GaxIn1−x NyAs1−y/GaAs",
keywords = "GaInNAsSb/GaAs",
abstract = "The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new techniques of electric and optical confinement. Band structure is modelled and typical quantum well properties are illustrated. A thorough study of the structural parameters is undertaken to take into account from the design criteria the temperature sensitivity. Minimising the Auger coefficient in the order of 10−29 cm6/s appears to allow achieving efficient laser diodes production."
}
@article{Chen200915,
title = "The influence of the AlN film texture on the wet chemical etching",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "15 - 19",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004746",
author = "Da Chen and Jingjing Wang and Dong Xu and Yafei Zhang",
keywords = "Aluminum nitride",
keywords = "Film texture",
keywords = "Wet chemical etching",
keywords = "Anisotropy",
abstract = "The influence of the aluminum nitride (AlN) film texture on the chemical etching in KOH solution was invested. The AlN films with the different texture and crystal quality were prepared by sputtering. It is found that the chemical etching behaviors, including the etch rate, the activation energy, the surface morphology and the anisotropy, are strongly dependent on the film texture. There is a faster etching in the case of mixed (1 0 0) and (0 0 2) texture and a lower rate in the case of only (0 0 2) texture. The etch rate also decreases with the crystal quality. The sample with the only (0 0 2) texture forms discontinuous column structure after etching and exhibits lower porosity compared to that of the mixed (1 0 0) and (0 0 2) texture. Due to the strong anisotropy of the AlN wurtzite structure, the morphology of the film deposited at 700 °C shows the homogeneous pyramid shape after etching. The cross-section micrographs of etching patterns indicate that the anisotropy of the chemical etching is improved with the improving of the crystal quality."
}
@article{DeMarcellis200920,
title = "A novel low-voltage low-power fully differential voltage and current gained CCII for floating impedance simulations",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "20 - 25",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004655",
author = "Andrea De Marcellis and Giuseppe Ferri and Nicola Carlo Guerrini and Giuseppe Scotti and Vincenzo Stornelli and Alessandro Trifiletti",
keywords = "Analog current-mode circuits",
keywords = "Second generation current conveyor (CCII)",
keywords = "Low-voltage low-power fully differential block",
keywords = "Floating impedance simulators",
abstract = "In this paper we present a new current-mode basic building block that we named voltage and current gained second generation current conveyor (VCG-CCII). The proposed active block allows to control and tune both the CCII current gain and the voltage gain through external control voltages. It has been designed, at transistor level in a standard CMOS technology (AMS 0.35 μm), with a low single supply voltage (2 V), as a fully differential active block. The proposed integrated solution, having both low-voltage (LV) and low-power (LP) characteristics, can be applied with success in suitable IC applications such as floating capacitance multipliers and floating inductance simulators, utilizing a minimum number of active components (one and two, respectively). Simulation results, related to floating impedance simulators, are in good agreement with the theoretical expectations."
}
@article{Gerstenmaier200926,
title = "Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "26 - 34",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004710",
author = "Y.C. Gerstenmaier and W. Kiffe and G. Wachutka",
keywords = "Thermal modeling",
keywords = "Compact thermal models",
keywords = "Thermal equivalent circuit transformation",
keywords = "Rapid Foster–Cauer transformation",
keywords = "Thermal multi-port description",
abstract = "This paper deals with the modeling problem of combining thermal subsystems (e.g. a semiconductor module or package with a cooling radiator) making use of reduced models. The subsystem models consist of a set of Foster-type thermal equivalent circuits, which are only behavioral models. Fast algorithms are presented in concise form by use of recursive relations for transforming (in both directions) unphysical Foster-type circuits in Cauer-circuits, which have physical behavior and therefore allow for the construction of the thermal model of the complete system. The R, C elements in the circuit can have negative values contrary to conventional network theory. Therefore the transformation methods have to be investigated under relaxed conditions concerning positive realness and passivity of the impedances. The method is exemplified by modeling and measurements on a single-chip IGBT package mounted on a closed water-cooled radiator. The thermal impedance of the complete system is constructed from the impedances of the subsystems, IGBT-package and radiator, and also the impedance of the package can be inferred from the measured impedance of the complete system. For modules or packages with large thermal contact area of largely inhomogeneous temperature a multi-port description is presented, which can be viewed as an extended two-port theory. In case of real two-ports the presented recursive analytic calculation methods for the impedances/admittances give an easy-to-use description for high calculation speed for all boundary conditions of the Cauer-network."
}
@article{Hogyoung200935,
title = "Al contacts to nanoroughened p-GaN",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "35 - 38",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004692",
author = "Hogyoung and Kim",
keywords = "Nanoroughening",
keywords = "Flip-chip",
keywords = "Al contact",
keywords = "Contact resistivity",
keywords = "Schottky barrier height",
abstract = "Nanoroughening of a p-GaN surface using nanoscale Ni islands as an etch mask was utilized to investigate the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. Improved ohmic characteristics were found for the nanoroughened sample. A specific contact resistivity of 8.9×10−2 Ω cm2 and a reflectance of 82% at 460 nm were measured for the nanoroughened Al contact. The Schottky barrier heights were decreased from 0.81 eV (I–V) and 0.84 eV (Norde) for the Al contact to 0.70 eV (I–V) and 0.69 eV (Norde) for the nanoroughened Al contact. The barrier height reduction may be attributed to enhanced tunneling and the increased contact area due to the nanoroughening. This work suggests that the ohmic contact characteristics and the light extraction efficiency may be improved further with a well-defined nanopatterned p-GaN layer."
}
@article{Xinquan200939,
title = "A CMOS piecewise curvature-compensated voltage reference",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "39 - 45",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004771",
author = "Lai Xinquan and Xu Ziyou and Li Yanming and Ye Qiang and Man Maoli",
keywords = "CMOS voltage reference",
keywords = "Piecewise curvature-compensated",
keywords = "Temperature coefficient",
abstract = "This paper presents a novel approach to the design of a high-precision CMOS voltage reference. The proposed circuit utilizes MOS transistors instead of bipolar transistors to generate positive and negative temperature coefficient (TC) currents summed up to a resistive load to generate low TC reference voltage. A piecewise curvature-compensation technique is also used to reduce the TC of the reference voltage within a wider temperature range. The output reference voltage can be adjusted in a wide range according to different system requirements by setting different parameters such as resistors and transistor aspect ratios. The proposed circuit is designed for TSMC 0.6 μm standard CMOS process. Spectre-based simulations demonstrate that the TC of the reference voltage is 4.3 ppm/°C with compensation compared with 107 ppm/°C without compensation in the temperature ranges from −15 to 95 °C using a 1.5 V supply voltage."
}
@article{ChienChan200946,
title = "Carbon nanotube tips for surface characterization: Fabrication and properties",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "46 - 49",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800445X",
author = "Chien-Chan and Su",
keywords = "Carbon nanotubes",
keywords = "Electrophoresis",
keywords = "Electrostatic attachment",
keywords = "Tip",
keywords = "Atomic force microscopy (AFM)",
abstract = "In this study, carbon nanotubes (CNTs) are attached to conventional silicon cantilevers via an electrophoretic and electrostatic attachment technique and used as probing tips for surface characterization measurement. The imaging capability and damage resistance properties of the CNT tips are studied on a line/space array of polymeric photoresist on a silicon substrate. The results indicate that the high aspect ratio of the CNT tip enables the tracing of deeper troughs than is possible with conventional silicon probes. In addition, the CNT tip can survive many hours of imaging without degradation or crashing because of its sp2-type bonding network. Implementing the atomic force microscopy (AFM) method with CNT tips provides a simple and non-destructive technique for probing a variety of surfaces, and has immense potential as a surface characterization tool."
}
@article{Chu200950,
title = "Grain size effect of nanocrystalline ZnO on characteristics of dye-sensitized solar cells",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "50 - 52",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004473",
author = "Tung-Te Chu and Huilin Jiang and Liang-Wen Ji and Wei-Shun Shih and Jingchang Zhong and Ming-Jie Zhuang",
keywords = "A1. Crystal morphology",
keywords = "A1. Nanostructures",
keywords = "B1. Zinc compounds",
keywords = "B2. Semiconducting II–IV materials",
keywords = "B3. Solar cells",
abstract = "In this study, we demonstrate a dye-sensitized solar cells (DSSCs) was made by using two different grain sizes of nanocrystalline ZnO (nc-ZnO) as the photoelectrodes of the cells. It can be seen that the efficiency of this new type of solar cells obviously varied as the size and morphology of ZnO nanostructures. The short-circuit photocurrent, fill factor, and power conversion efficiency are enhanced while the smaller nc-ZnO was utilized in such a device."
}
@article{Chen200953,
title = "Damping vibration of scanning near-field optical microscope probe using the Timoshenko beam model",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "53 - 57",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.100",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003510",
author = "Terry Yuan-Fang Chen and Haw-Long Lee",
keywords = "Flexural damping vibration",
keywords = "Scanning near-field optical microscope",
keywords = "Timoshenko beam theory",
abstract = "The effect of interactive damping on the flexural vibration frequency for the scanning near-field optical microscope (SNOM) fiber probe based on the Timoshenko beam theory, including the effects of shear deformation and rotary inertia, has been analyzed. In the analysis, the effects of the transverse contact stiffness, damping factor and the ratio of different probe dimensions on the damping vibration frequency were studied. The results show that increasing the ratio of probe length to radius increases the damping vibration frequency of mode 1. Besides, the damping vibration frequencies, based on the Bernoulli–Euler beam theory and the Timoshenko beam theory, are compared. When the contact stiffness is very large for the higher modes, the effects of shear deformation and rotary inertia on the frequency becomes significant. Furthermore, increasing the damping factor increases the vibration frequency. The trend is more obvious, especially dimensionless damping factor ηf>0.4."
}
@article{Qiulin200958,
title = "Design, fabrication and characterization of pyroelectric thin film and its application for infrared gas sensors",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "58 - 62",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003698",
author = "Tan Qiu-lin and Zhang Wen-dong and Xue Chen-yang and Xiong Ji-jun and Liu Jun and Li Jun-hong and Liang Ting",
keywords = "Pyroelectric",
keywords = "PZT thin film",
keywords = "Sol–gel",
keywords = "Infrared",
keywords = "Gas sensor",
abstract = "Prepared by a sol–gel process, the lead zirconate titanate (PZT) (PbZr0.3Ti0.7O3) thin film, which is chosen as an infrared sensing film, uses lead acetate trihydrate, zirconium acetylacetone, acetylacetone, and titanium isopropoxide as starting materials. The pyroelectric infrared sensor with the PZT thin film has been successfully fabricated. The fabrication process of the device is discussed in detail. A new Au Pt–PZT–Pt infrared detecting structure on silicon substrate with a micro bridge is designed. Under the response and reference dual-element configuration, undesirable signals, caused by vibration, ambient temperature change, and sunlight, are cancelled out at the input of the preamplifier circuit. The dual-element structural design of the device is discussed and analyzed in detail. In order to realize our purpose to use this detector to monitor gas concentration, we designed a detection set-up in the light of a certain gas which absorbs infrared radiation at specific wavelengths. The gas concentration is obtained by designing a weak signal detect circuit and data arithmetic. The first measurement for methane is reported. Experimental result shows the ability of methane detection of the detector based on the infrared sensor element."
}
@article{Yang200963,
title = "Effect of type-II quantum well of m-MTDATA/α-NPD on the performance of green organic light-emitting diodes",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "63 - 65",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004461",
author = "Jungjin Yang and C.K. Suman and Changhee Lee",
keywords = "Quantum well",
keywords = "Carrier injection",
keywords = "OLEDs",
keywords = "Efficiency",
abstract = "The type-II multiple quantum well (MQW) structure is prepared and introduced into green organic green light-emitting diodes consisting of 4,4′-bis-[N-(naphthyl)-N-phenyl-amino]biphenyl (α-NPD) and tris-(8-hydroxyquinolinato)-aluminum (Alq3). The quantum well (QW) and wall are fabricated by 4,4′,4″-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA) and α-NPD, respectively. The device performance of MQW organic light-emitting diodes (OLEDs) has been improved; the luminous efficiency by 25% and power efficiency by 17% compared with the reference device. The performance improvement can be explained by the increased electron–hole balance in the device due to the hole confinement in the QW structure."
}
@article{daSilvaZambom200966,
title = "Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "66 - 69",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003649",
author = "Luís da Silva Zambom and Ronaldo Domingues Mansano and Ana Paula Mousinho",
keywords = "Silicon nitride",
keywords = "Silicon oxide",
keywords = "Deposition",
keywords = "Sputtering",
keywords = "Dielectric",
abstract = "In this study, oxide and nitride films were deposited at room temperature through the reaction of silicon sputtered by argon and oxygen ions or argon and nitrogen ions at 250 and 350 W with 0.67 Pa pressure. It was observed that for both thin films the deposition rates increase with the applied RF power and decrease with the increase of the gas concentration. The Si/O and Si/N ratio were obtained through RBS analyses and for silicon oxide the values changed from 0.42 to 0.57 and for silicon nitride the values changed from 0.4 to 1.03. The dielectric constants were calculated through capacitance–voltage curves with the silicon oxide values varying from 2.4 to 5.5, and silicon nitride values varying from 6.2 to 6.7, which are good options for microelectronic dielectrics."
}
@article{Cao200970,
title = "Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "70 - 73",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003704",
author = "Kun Cao and Zhanguo Chen and Ce Ren and Gang Jia and Tiechen Zhang and Xiuhuan Liu and Bao Shi and Jianxun Zhao",
keywords = "cBN",
keywords = "Electro-optical modulator",
keywords = "Second-order nonlinear optical susceptibility",
abstract = "We demonstrate a transverse electro-optical modulator based on a tiny and irregular octahedral wafer of cubic boron nitride (cBN) crystal that is prepared by hexagonal boron nitride at high pressure and high temperature using nitride as the catalyst. A continuous wave semiconductor laser at the wavelength of 650 nm is used as a light source. A novel electrode fabrication is designed, a developed method different from the conventional transverse electro-optical modulator is introduced and the expression of the intensity of output beam is thought over. We obtain the half-wave voltage based on experiments of transverse electro-optical modulation. The second-order nonlinear optical susceptibility χijk(2)(ω,0)=1.919×10−12 m/V of cBN crystal is calculated by means of the half-wave voltage."
}
@article{O200974,
title = "Structural and optical properties of the polycrystalline ZnO films synthesized via oxidative annealing of ZnSe/YSZ heterostructures",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "74 - 77",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.099",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003522",
author = "O. and Maksimov",
keywords = "Electronic materials",
keywords = "Thin films",
keywords = "Luminescence",
abstract = "We synthesized polycrystalline ZnO films via oxidative annealing of ZnSe/yttria-stabilized zirconia (YSZ) heterostructures and investigated the influence of the processing conditions on their structural and optical properties. While ZnO films synthesized using low-temperature annealing (500–600 °C) did not show any preferential orientation, highly textured films were obtained at high temperatures (700–800 °C). In addition, we demonstrated that prolonged high-temperature annealing (3 h at 800 °C) effectively eliminated point defects, as was evident from the increased band edge to deep-level emission intensity ratio."
}
@article{Tang200978,
title = "MEMS inclinometer based on a novel piezoresistor structure",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "78 - 82",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.080",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003157",
author = "Lijun Tang and Kairui Zhang and Shang Chen and Guojun Zhang and Guowen Liu",
keywords = "Inclinometer",
keywords = "Piezoresistive",
keywords = "MEMS",
keywords = "Test",
abstract = "The design, fabrication and test of a novel MEMS inclinometer were described. This inclinometer was based on the piezoresistive detection method, and was fabricated by SOI process. The micro-structure of the inclinometer was a four vertical cantilever beams, a center mass with a rigid cylinder fixed on it. The piezoresistors fabricated on the beams were used to detect the deformation of the cantilevers caused by the gravity. A test system was designed in this paper, from the test results we found that this inclinometer had a sensitivity of 0.025 mV/°, and the test results and the theoretical results are in well agreement, the standard deviation is 0.43874."
}
@article{Jia200983,
title = "Design and fabrication of silicon-based 8×8 MEMS optical switch array",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "83 - 86",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.047",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003169",
author = "Cuiping Jia and Jingran Zhou and Wei Dong and Weiyou Chen",
keywords = "Optical switch array",
keywords = "Mirror",
keywords = "Actuating voltage",
keywords = "MEMS",
abstract = "Silicon-based torsion-beam 8×8 optical switch array are designed and fabricated with bulk silicon micromachining technology. Torsion beams and cantilever beams with reflective micromirror situated on the same wafer are fabricated on (1 1 0) silicon. During fabricating the torsion beam actuating structure, the etched hillocks on (1 1 0) plane are obstacles to achieve smooth torsion beam. It is put forward the reasonable ratios mixtures of HF, HNO3 and CH3COOH to improve the processes of fabricating torsion beam actuating structure. The slanted under electrodes that can reduce the actuating voltage are designed and fabricated on tilting (1 1 1) plane by wet chemical etching. According to the etching characteristics of (1 1 1) silicon in KOH solution, two designed photomask patterns are proposed in this paper. According to the experimental results, for the 180 μm displacement of mirrors, the device presents the switching time less than 6 ms and the actuating voltage about 65 V. It shows that this optical switch array can make the meet of the optical communication network."
}
@article{Wang200987,
title = "Growth of BxGa1−xAs, BxAl1−xAs and BxGa1−x−yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition",
journal = "Microelectronics Journal",
volume = "40",
number = "1",
pages = "87 - 91",
year = "2009",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.066",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003303",
author = "Qi Wang and Xiaomin Ren and Hui Huang and Yongqing Huang and Shiwei Cai",
keywords = "Metalorganic chemical vapor deposition",
keywords = "Triethylboron",
keywords = "BGaAs",
keywords = "BAlAs",
keywords = "BGaInAs",
keywords = "MQW",
abstract = "High quality zinc-blende BxGa1−xAs, BxAl1−xAs, BxGa1−x−yInyAs and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (0 0 1)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminum, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase boron mole fraction.
In this study, the maximum boron composition (x) of 5.8% and 1.3% was achieved at the same growth temperature of 580 °C for bulk BxGa1−xAs and BxAl1−xAs, respectively. 11 K photoluminescence (PL) peak wavelength of lattice-matched BxGa1−x−yInyAs epilayer with boron composition of about 4% reached 1.24 μm."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "IFC - ",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00495-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004953",
key = "tagkey2008IFC"
}
@article{Zaki20081395,
title = "Formal verification of analog and mixed signal designs: A survey",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1395 - 1404",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.05.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002085",
author = "Mohamed H. Zaki and Sofiène Tahar and Guy Bois",
keywords = "Formal verification",
keywords = "Analog and mixed signal design verification",
keywords = "Survey",
abstract = "Analog and mixed signal (AMS) designs are an important part of embedded systems that link digital designs to the analog world. Due to challenges associated with its verification process, AMS designs require a considerable portion of the total design cycle time. In contrast to digital designs, the verification of AMS systems is a challenging task that requires lots of expertise and deep understanding of their behavior. Researchers started lately studying the applicability of formal methods for the verification of AMS systems as a way to tackle the limitations of conventional verification methods like simulation. This paper surveys research activities in the formal verification of AMS designs as well as compares the different proposed approaches."
}
@article{Chung20081405,
title = "Raman scattering of polycrystalline 3C–SiC film deposited on AlN buffer layer by using CVD with HMDS",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1405 - 1407",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.053",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003212",
author = "Gwiy-Sang Chung and Kang-San Kim",
keywords = "AlN",
keywords = "Poly 3C–SiC",
keywords = "Raman scattering",
keywords = "HMDS",
abstract = "This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C–SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar+H2). The Raman spectra of SiC films deposited on AlN layer of before and after annealing were investigated according to the growth temperature of 3C–SiC. Two strong Raman peaks, which mean that poly 3C–SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C–SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C–SiC deposited at 1180 °C on AlN of after annealing."
}
@article{Chung20081408,
title = "Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1408 - 1412",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.052",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003248",
author = "Gwiy-Sang Chung and Kyu-Hyung Yoon",
keywords = "Ohmic contact",
keywords = "Single-crystalline 3C-SiC",
keywords = "TiW",
keywords = "Contact resistivity",
abstract = "This paper describes the ohmic contacts to single-crystalline 3C-SiC thin films heteroepitaxially grown on Si (0 0 1) wafers. In this work, a TiW (titanium–tungsten) film was deposited as a contact material by RF magnetron sputter and annealed through the vacuum and rapid thermal anneal (RTA) process. Contact resistivity between the TiW film and the n-type 3C-SiC substrate was measured by the circular transmission line model (C-TLM) method. The contact phases and interface of the TiW/3C-SiC were evaluated with X-ray diffraction (XRD), scanning electron microscope (SEM) and Auger electron spectroscopy (AES) depth-profiles. The TiW film annealed at 1000 °C for 45 s with the RTA plays an important role in the formation of ohmic contact with the 3C-SiC film and the contact resistance is less than 4.62×10−4 Ω cm2. Moreover, the inter-diffusion at the TiW/3C-SiC interface was not generated during, before and after annealing, and was kept in a stable state. Therefore, the ohmic contact formation technology of single-crystalline 3C-SiC films by using the TiW film is very suitable for high-temperature micro-electro-mechanical system (MEMS) applications."
}
@article{Chung20081413,
title = "H2 carrier gas dependence of Young's modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1413 - 1415",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.062",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003261",
author = "Gwiy-Sang Chung and Ki-Bong Han",
keywords = "Poly 3C-SiC",
keywords = "Nano-indentation",
keywords = "AFM",
keywords = "Young's modulus",
keywords = "Hardness",
abstract = "This paper presents the mechanical properties of poly (polycrystalline) 3C-SiC thin films according to 0%, 7%, and 10% carrier gas (H2) concentrations using nano-indentation. When H2 concentration was 10%, it has been proved that the mechanical properties, Young's modulus, and hardness of poly 3C-SiC films are the best of them. In the case of 10% H2 concentration, Young's Modulus and hardness were obtained as 367 and 36 GPa, respectively. The surface roughness according to H2 concentrations was investigated by AFM (atomic force microscope). When H2 concentration was 10%, the roughness of 3C-SiC thins was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin films to MEMS (micro-electromechanical system) applications, H2 concentration's rate should increase to obtain better mechanical properties and surface roughness."
}
@article{Kumar20081416,
title = "Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1416 - 1424",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.084",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003340",
author = "Sona P. Kumar and Anju Agrawal and Rishu Chaujar and Mridula Gupta and R.S. Gupta",
keywords = "AlGaN/GaN HEMT",
keywords = "Carrier transport efficiency",
keywords = "GME",
keywords = "Intrinsic gain",
keywords = "On-state",
abstract = "The present work explores the features of gate material engineered (GME) AlGaN/GaN high electron mobility transistor (HEMT) for enhanced carrier transport efficiency (CTE) and suppressed short channel effects (SCEs) using 2-D sub-threshold analysis and device simulation. The model accurately predicts the channel potential, electric field and sub-threshold current for the conventional and GME HEMT, taking into account the effect of work function difference of the two metal gates. This is verified by comparing the model results with the ATLAS simulation results. Further, simulation study has been extended to reflect the wide range of benefits exhibited by GME HEMT for its on-state and analog performance. The simulation results demonstrate that the GME HEMT exhibits much higher on current, lower conductance and higher transconductance as compared to the conventional HEMT due to improved CTE and reduced SCEs. This in turn has a direct bearing on the device figure of merits (FOMs) such as intrinsic gain, device efficiency and early voltage. Tuning of GME HEMT in terms of the relative lengths of the two metal gates, their work function difference and barrier layer thickness has further been carried out to enhance the drive current, transconductance and the device FOMs illustrating the superior performance of GME HEMT for future high-performance high-speed switching, digital and analog applications."
}
@article{Sahal20081425,
title = "Structural, electrical and optical properties of ZnO thin films deposited by sol–gel method",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1425 - 1428",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.085",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003315",
author = "M. Sahal and B. Hartiti and A. Ridah and M. Mollar and B. Marí",
keywords = "Thin films",
keywords = "Al-doped ZnO",
keywords = "Sol–gel",
keywords = "Spin coating",
abstract = "Thin films of intrinsic and Al-doped ZnO were prepared by the sol–gel technique associated with spin coating onto glass substrates. Zinc acetate dehydrate, ethanol and monoethanolamine were used as a starting material, solvent and stabiliser, respectively. Structural, electrical and optical characterizations of the films have been carried out. All films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction 〈0 0 2〉. The four-points technique was used to characterize thin films electrically. All films exhibit a transmittance above 80–90% along the visible range up to 650 nm and a sharp absorption onset about 375 nm corresponding to the fundamental absorption edge 3.3 eV. Intense UV photoluminescence is observed for undoped and 1% Al-doped ZnO films."
}
@article{Abraham20081429,
title = "Silicon on insulator photo-activated modulator",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1429 - 1432",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.075",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003339",
author = "Doron Abraham and Zeev Zalevsky and Avraham Chelly and Jossef Shappir and Michael Rosenbluh",
keywords = "Electro-optical devices",
keywords = "Photonic intergrated circuits",
abstract = "In this paper we present a novel concept for a photo-activated modulator device based on silicon on insulator (SOI-PAM) and in which the information is electronic while the modulation command is optical. Free carriers are generated by external illumination in the vicinity of the information channel. A side-gate potential selects the type of carriers controlling the electric resistance of the channel. The channel is surrounded by oxide trenches to avoid cross-talk current. Another side potential clears the control carriers allowing a high-frequency modulation like in a Metal–Oxide–Semiconductor field effect transistor (MOSFET) device. Since the control command is photonic, faster operation rates are anticipated. The proposed device has dimensions of less than 1 cubic micron."
}
@article{Krichen20081433,
title = "Effect of the interface states on the cell parameters of a thin film quasi-monocrystalline porous silicon as an active layer",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1433 - 1438",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.068",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003327",
author = "Monem Krichen and Abdelaziz Zouari and Adel Ben Arab",
keywords = "Semiconductor",
keywords = "Solar cell",
keywords = "Quasi-monocrystalline porous silicon",
keywords = "Photovoltaic parameters",
abstract = "Unlike crystalline silicon, quasi-monocrystalline porous silicon (QMPS) layers have a top surface with small voids in the body. What is more pertinent to the present study is the fact that, at a given wavelength of interest for solar cells, these layers are often reported, in the literature, to have a higher absorption coefficient than crystalline silicon. The present study builds on existing literature, suggesting an analytical model that simulates the performance of an elementary thin QMPS (as an active layer) solar cell. Accordingly, the effects that the interface states located at the void–silicon interface and that the porosity of this material have on the cell parameters are investigated. Furthermore, the effects of the optimum base doping, QMPS thickness, and porosity on the photovoltaic parameters were taken into consideration. The results show that the optimum base doping depends on the QMPS thickness and porosity. For an 8 μm thickness, the film QMPS layer gives a 35.4 mA/cm2 for short-circuit current density, 15% for conversion efficiency, and 527 mV for open-circuit voltage when the value of the interface states is about 1012 cm−2 and the base doping is about 2×1018 cm−3 under AM 1.5 conditions."
}
@article{Srnanek20081439,
title = "Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1439 - 1443",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.039",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003200",
author = "R. Srnanek and G. Irmer and D. Donoval and J. Osvald and D. Mc Phail and A. Christoffi and B. Sciana and D. Radziewicz and M. Tlaczala",
keywords = "Zn delta doping",
keywords = "Concentration profile",
keywords = "Gallium arsenide",
keywords = "Bevel",
keywords = "Raman spectroscopy",
abstract = "Micro-Raman spectroscopy was used to characterize beveled Zn delta (δ)-doped GaAs structures. By adapting procedures previously developed for the study of Si δ-doped GaAs structures, Zn-doping profiles were obtained for a set of structures prepared with different doping levels. Values of the doping spike concentration and the full-width at half-maximum of the doping profile were compared with the values obtained by the electrochemical capacitance–voltage (EC–V) and secondary ion mass spectroscopy (SIMS) methods. The good correspondence between this Raman procedure and other well-known methods proves the validity of the technique for determining doping profiles in Zn δ-doped GaAs structures."
}
@article{TS20081444,
title = "Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1444 - 1451",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.06.081",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003224",
author = "T.S. and Sathiaraj",
keywords = "Indium tin oxide (ITO)",
keywords = "Sputtering",
keywords = "Optical properties",
keywords = "Electrical properties",
keywords = "X–ray diffraction",
keywords = "Annealing",
abstract = "Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3×10−4 mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80–85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range 100–400 °C. The annealed films show decreased transmittance in the IR region and decreased resistivity. The films were characterized by electron microscopy, spectrophotometry and XRD. The predominant orientation of the films is (2 2 2) instead of (4 0 0). The transmission and reflection spectra in the wavelength range 300–2500 nm are used to study the optical behaviour of the films. The optical transmittance and reflectance spectra of the films were simultaneously simulated with different dielectric function models. The best fit of the spectrophotometric data was obtained using the frequency-dependent damping constant in the Drude model coupled with the Bruggeman effective medium theory for the surface roughness. It has been found that the sputtering power and the chamber residual pressure play a key role in the resulting optical properties. This paper presents the refractive index profile, the structure determined from the XRD and the electrical properties of ITO films. It has been found from the electrical measurement that films sputtered at 200 W power and subsequently annealed at 400 °C have a sheet resistance of 80 Ω/□ and resistivity of 1.9×10−3 Ωcm."
}
@article{Cai20081452,
title = "Study on thick-film PTC thermistor fabricated by micro-pen direct writing",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1452 - 1456",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001900",
author = "Zhixiang Cai and Xiangyou Li and Qianwu Hu and Xiaoyan Zeng",
keywords = "Thick-film PTC thermistor",
keywords = "Micro-pen",
keywords = "Direct writing",
keywords = "Microstructure",
abstract = "Micro-pen direct-write technique has been used to fabricate thick-film PTC thermistor. Thick-film PTC thermistors were fired at 700, 750, 800, 850 and 900 °C. The microstructure and the development of the conductive phase were investigated by optical microscope, scanning electron microscopy and X-ray powder-diffraction analysis. Sheet resistivities and temperature coefficients of resistivity were measured as a function of firing temperature. The conductive phase of the PTC thermistor is based on a mixture of RuO2, CuO and ruthenate. Pb2Ru2O6.5 decomposes and the cubic-like CuO particle grows up to spinel-like particle during firing at temperature over 750 °C, while the sheet resistivities decrease from high values to a lowest values."
}
@article{Touati20081457,
title = "Near-infrared photoluminescence of V-doped GaN",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1457 - 1460",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001869",
author = "H. Touati and M. Souissi and Z. Chine and B. El Jani",
keywords = "MOVPE",
keywords = "GaN",
keywords = "Vanadium",
keywords = "Photoluminescence",
abstract = "The visible and infrared luminescence of vanadium-doped GaN (GaN:V) grown by metalorganic vapour phase epitaxy technique (MOVPE) on SiN-treated sapphire substrate were examined. Growth process was in-situ monitored by laser reflectometry. At room temperature and in the visible spectral range, photoluminescence (PL) shows a strong blue emission band. At 10 K, the near-infrared PL spectra exhibit several emissions dominated by a zero-phonon line (ZPL) at 0.821 eV with a full-width at half-maximum (FWHM) of 8.8 meV. Other peaks emerge in the low- and high-energy side of ZPL, which can be assigned to the fine structure of the charge state or the satellite lines. By increasing the temperature, the peaks’ intensities decrease and disappear above 150 K. The red-shift and the FWHM of the 0.821 eV line increase versus temperature, indicating a high contribution of the photonic Raman processes. This emission was assigned to be a vanadium intracenter emission."
}
@article{Venkataratnam20081461,
title = "Design and simulation of logic circuits with hybrid architectures of single-electron transistors and conventional MOS devices at room temperature",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1461 - 1468",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.08.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004424",
author = "A. Venkataratnam and A.K. Goel",
keywords = "Nanotechnology",
keywords = "Single-electron transistor",
keywords = "CMOS",
keywords = "Logic gates",
abstract = "Single-electron transistors (SETs) provide current conduction characteristics comparable to CMOS technology and research shows that these devices can be used to develop logic circuits. It has been observed while building logic circuits that comprise only of SETs the voltage at the gate input had to be much higher than the power supply for the SET to have acceptable switching characteristics. This limitation in the gate and power supply voltages makes it practically inappropriate to build circuits. In this paper, we propose a hybrid architecture to overcome this limitation by combining conventional MOS devices with SETs. Three different types of hybrid circuits have been proposed and their characteristics have been studied using SPICE-based simulation tool which includes a SET-SPICE model."
}
@article{CS20081469,
title = "Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1469 - 1471",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001870",
author = "C.S. and Yang",
keywords = "Quantum dot",
keywords = "Hydrogenic donor impurity",
keywords = "Effective-mass method",
keywords = "Finite difference method",
keywords = "Nonlinear programming",
abstract = "The problem of a hydrogenic donor impurity in a cubic quantum dot with finite confinement potential is solved by the finite difference method. The discretized matrix equation needs to be solved for its eigenvalues and eigenfunctions. An algorithm of nonlinear programming is utilized for this problem. The results match references qualitatively in the weak regime, but introduce new problems in the strong and intermediate regimes."
}
@article{Jadhav20081472,
title = "Microwave absorption and permittivity of polyaniline thin films using overlay technique",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1472 - 1475",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001894",
author = "S.V. Jadhav and Vijaya Puri",
keywords = "Polyaniline",
keywords = "Microstripline",
keywords = "Conductivity",
keywords = "Shielding effectiveness",
keywords = "Dielectric constant",
abstract = "This paper reports the use of nonresonating microstripline for investigation of polyaniline thin film using overlay technique. Microwave absorption, DC conductivity, microwave conductivity, shielding effectiveness and microwave permittivity and dielectric loss of the conducting PANI films are reported. DC conductivity was between 0.15×10−3 and 3.13×10−3 S/cm. Microwave conductivity was between 0.1 and 10 S/cm. The PANI films coated on alumina gave shielding effectiveness values of −1 to −8 db. The ε′ was between 40 and 350. Measurements have been carried out over the frequency range 8.2–18 GHz. The effect of thickness of the overlay is also reported."
}
@article{Kashfi20081476,
title = "Designing an ultra-high-speed multiply-accumulate structure",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1476 - 1484",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003674",
author = "Fatemeh Kashfi and S. Mehdi Fakhraie and Saeed Safari",
keywords = "Multiply-accumulate",
keywords = "Ultra high speed",
keywords = "Low voltage swing",
keywords = "Manchester carry chain",
abstract = "In this article, an ultra-high-speed multiply-accumulate (MAC) structure is proposed. This fused MAC block uses low-voltage-swing (LVS) technique in the utilized carry-save adders and the final adder to improve its speed. Carry-save adders and the final adder are implemented with pass-transistor-based Manchester-carry-chain logic. Sense amplifiers are used in the output nodes to amplify the LVS signals to the standard levels of zero and one. With this technique, we achieved the outstanding clock frequency of 15 GHz for a five-stage pipelined MAC, which is 87.5% higher than the highest speed achieved for a pipelined multiplier in 65 nm technology and above, with the power consumption of 25 mW/GHz in 1.2 V voltage supply."
}
@article{DallaBetta20081485,
title = "High-performance PIN photodiodes on TMAH thinned silicon wafers",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1485 - 1490",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001924",
author = "G.-F. Dalla Betta and S. Ronchin and A. Zoboli and N. Zorzi",
keywords = "Silicon optical sensor",
keywords = "PIN photodiode",
keywords = "TMAH etching",
keywords = "Quantum efficiency",
keywords = "Response speed",
abstract = "The electro-optical characteristics of PIN photodiodes fabricated on high-resistivity silicon substrates locally thinned by bulk micromachining techniques are discussed. Experimental results and numerical simulations demonstrate that devices fabricated by the proposed approach have leakage current, quantum efficiency and speed performance comparable to the best commercially available Si PIN photodiodes, with the additional advantage of possible back-side illumination, making them suitable for the implementation of two-dimensional arrays having a read-out electronic chip connected to the front-side."
}
@article{Valeria20081491,
title = "Fixed-width multipliers for the implementation of efficient digital FIR filters",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1491 - 1498",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.07.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003686",
author = "Valeria and Garofalo",
keywords = "Fixed-width multipliers",
keywords = "Truncated multipliers",
keywords = "FIR filter",
keywords = "Multiply and accumulate unit",
abstract = "The use of fixed-width multiplier for the implementation of FIR filters is investigated in this paper.
The paper presents a review of the existing fixed-width multiplier architectures and analytically calculates the error introduced by the use of fixed-width multipliers in the realization of FIR filters. FIR filters are implemented in TSMC 0.18 μ m technology using state-of-the-art fixed-width multipliers, varying the architecture and the width of the output.
The analysis shows that fixed-width multipliers are a suitable replacement for the full-width multiplier. Furthermore the best trade-off between error, silicon area occupation and power is provided by the LMS fixed-width multiplier. As example a FIR filter with 16b fixed-width multiplier provides a reduction of 16% in area and 18% in power dissipation with a 22% increase of the working frequency, while keeping the mean square error below 1 4 LSB2."
}
@article{Ganji20081499,
title = "Design of nanoswitch based on C20-bowl molecules: A first principles study",
journal = "Microelectronics Journal",
volume = "39",
number = "12",
pages = "1499 - 1503",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.04.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001882",
author = "M.D. Ganji and H. Aghaei and M.R. Gholami",
keywords = "Molecular electronics",
keywords = "DFT",
keywords = "Electron transport",
keywords = "Non-equilibrium Green's function",
keywords = "C20",
keywords = "Nano-switches",
abstract = "We demonstrate theoretically by density functional non-equilibrium Green's function method that a much simplest two-terminal wire can exhibit switching, and we present a realistic theory of its behavior. We consider a C20-bowl molecular wire sandwiched between an Au (1 0 0) substrate and a monatomic Au scanning tunneling microscope (STM) tip. Lateral motion of the tip over the pentagon ring causes it to change from one conformation class to the other and to switch between a strongly and a weakly conducting state. Thus, surprisingly, despite their apparent simplicity, these Au/C20/Au nanowires are shown to be a convenient switch, the simplest two-terminal molecular switches to date. Experiments with a conventional STM are proposed to test these predictions."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "IFC - ",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00480-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004801",
key = "tagkey2008IFC"
}
@article{CamachoBeltran20081219,
title = "Preface",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1219 - ",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800030X",
author = "Angela S. Camacho Beltran and Anderson Dussan Cuenca and Mohamed Henini"
}
@article{CarrilloNuñez20081220,
title = "Scrutinizing localization properties in heuristic models for DNA molecules: Localization lengths versus participation ratios",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1220 - 1221",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.060",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000311",
author = "H. Carrillo-Nuñez and Peter A. Schulz",
keywords = "Localization",
keywords = "Low-dimensional systems",
keywords = "DNA",
abstract = "In this work we analyze the localization of electronic states of low-dimensional systems. We choose a well known strictly one-dimensional chain and an heuristic model for DNA-like molecules, in order to compare two established methods for analyzing the degree of localization, namely the localization length and participation ratio."
}
@article{Paez20081222,
title = "Delocalization of vibrational normal modes in double chains: Application to DNA systems",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1222 - 1223",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000323",
author = "Carlos J. Paez and Peter A. Schulz",
keywords = "Delocalization",
keywords = "Vibrational",
keywords = "Chains",
keywords = "DNA",
abstract = "In this work we investigate the localization of normal modes for several heuristic models of DNA like chains. The main finding is a possible robust normal mode delocalization in a finite low frequency range, irrespective of sequencing."
}
@article{Fonseca20081224,
title = "Study of complex charge distributions in an electrolyte using the Poisson–Boltzmann equation by lattice-Boltzmann method",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1224 - 1225",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.061",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000335",
author = "F. Fonseca and A. Franco",
keywords = "Lattice-Boltzmann",
keywords = "Poisson-Boltzmann",
keywords = "Elliptical charges",
abstract = "The main goal of this work is the computational study of the Poisson–Boltzmann (PB) equation for a circular and elliptical charges immerse in a strong electrolyte using the lattice-Boltzmann method. We remark that this kind of charge distributions has no analytical results due to the non-linearity of PB equation and the complexity of the charge distributions. The model describes the electrical potential and his interactions produced by ions adsorption on the surface of circular or elliptical charged particles. Finally, we analyze the stability of the method."
}
@article{Lassen20081226,
title = "Piezoelectric models for semiconductor quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1226 - 1228",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.059",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000347",
author = "B. Lassen and D. Barettin and M. Willatzen and L.C. Lew Yan Voon",
keywords = "Piezoelectric effect",
keywords = "Quantum dot",
keywords = "Schrödinger–Poisson–Navier",
abstract = "The importance of fully coupled and semi-coupled piezoelectric models for quantum dots are compared. Differences in the strain of around 30% and in the electron energies of up to 30 meV were found possible for GaN/AlN dots."
}
@article{Parra20081229,
title = "Growth and morphology of ultra-thin Ni films on Pd(1 0 0)",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1229 - 1230",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.050",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000359",
author = "C. Parra and P. Häberle and M.D. Martins and W.A.A. Macedo",
keywords = "Metal homoepitaxy",
keywords = "Ni ultrathin films",
keywords = "Strain",
keywords = "STM",
keywords = "RHEED",
abstract = "A series of Ni films with thickness from 0.2 monolayers (ML) to 12.5 ML were epitaxially grown on a Pd(1 0 0) substrate at room temperature. Growth and morphology were investigated by scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and Auger electron spectroscopy (AES). We found that the strain relief mechanism for the tetragonal distorted films is related with the appearance of 1 Å high-filaments."
}
@article{Gómez20081231,
title = "Crossed Andreev reflection in superconducting junctions",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1231 - 1232",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.074",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000360",
author = "Shirley Gómez and William J. Herrera and Jesús V. Niño and Diego A. Manjarrés",
keywords = "Superconductivity",
keywords = "Crossed Andreev reflection",
keywords = "Elastic cotunneling",
keywords = "Crossed conductance",
abstract = "In this work crossed Andreev reflection (CAR) and elastic cotunneling (EC) are studied for junctions ( N 1 ISIN 2 ) , where N 1 and N 2 are normal metals, S is a high T c superconductor and I is an insulator. This study is carried out based on the analytical solutions of Bogoliubov de Gennes equations for anisotropic superconductors. The influence of different pair potential symmetries on the CAR and crossed conductance is analyzed. We show that CAR and EC are higher in d x 2 - y 2 symmetry than in s symmetry. In the case of normal electrodes without magnetization, EC is the predominantly process for d x 2 - y 2 symmetry, while in s symmetry, both processes decay with the same amplitude."
}
@article{Rosales20081233,
title = "Conductance of Armchair GNRs with side-attached organic molecules",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1233 - 1235",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.051",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000372",
author = "L. Rosales and M. Pacheco and Z. Barticevic and P. Orellana",
keywords = "Graphene nanoribbons",
keywords = "Transport properties",
keywords = "Organic molecules",
abstract = "In this work we show a theoretical study of the transport properties of armchair graphene nanoribbon at which linear poly-aromatic hydrocarbon molecules (LPHC) are side-attached on the ribbon edge. We describe the system by a tight-binding model and calculate the local density of states and the conductance within the Green's function formalism. We found that the conductance curves reflect the energy spectra of the attached molecules, suggesting that AGNRs could be used as a spectrograph device."
}
@article{Rodríguez20081236,
title = "Thermoelectric figure of merit of LSCoO–Mn perovskites",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1236 - 1238",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.046",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000384",
author = "J.E. Rodríguez and D. Cadavid and L.C. Moreno",
keywords = "LSCoO compounds",
keywords = "Thermoelectric materials",
keywords = "Thermoelectric figure of merit",
abstract = "Oxide ceramics with nominal composition of La 0.8 Sr 0.2 Co 1 - x Mn x O 3 ( 0 ⩽ x ⩽ 0.05 ) were grown by using the citrate sol–gel method followed by high temperature sintering. The thermoelectric properties were studied in the temperature range between 100 and 290 K. The magnitude of Seebeck coefficient S ( T ) and electrical resistivity ρ ( T ) increases with the manganese doping level, reaching maximum values close to 180 μ V / K and 4 m Ω cm , respectively. On the contrary, the total thermal conductivity κ ( T ) decreases with the manganese content. The behavior of S ( T ) and ρ ( T ) was interpreted in terms of small-pollaron hopping mechanism. From S ( T ) , ρ ( T ) and κ ( T ) data it was possible to calculate the dimensionless thermoelectric figure of merit ZT, which reaches maximum values close to 0.12; the structural and morphological properties of the samples were studied by powder X-ray diffraction analysis and scanning microscopy (SEM), respectively."
}
@article{León20081239,
title = "Electronic properties of nanoribbon junctions",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1239 - 1241",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.029",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000396",
author = "A. León and Z. Barticevic and M. Pacheco",
keywords = "Quantum dots",
keywords = "Nanoribbon",
keywords = "Graphene",
abstract = "We investigate the effects of nitrogen impurities on the electronic properties of quantum dots realized in Z-shaped graphene nanoribbon junction. The system is studied using first principle calculations, based on the local spin density approximation (LSDA). Our results indicate that the presence of the impurities drastically changes the configuration of the localized states in the quantum dot."
}
@article{Gómez20081242,
title = "Thermal, structural and magnetic characterization of Co-based alloys",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1242 - 1244",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.088",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000402",
author = "M. Gómez and A. Rosales-Rivera and P. Pineda-Gómez and D. Muraca and H. Sirkin",
keywords = "Soft magnetic alloys",
keywords = "Thermal analysis",
keywords = "Vibrating magnetometer sample (VSM)",
keywords = "Magneto-impedance effect",
abstract = "A study of thermal and magnetic properties and of the giant magneto-impedance (GMI) effect in cobalt-based amorphous alloy ribbons Co 80 - x Fe x B 10 Si 10 , with x = 6 , 8 and 10 is presented. The thermal and magnetic characterization was carried out using differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), magnetization and magneto-impedance measurements. The ribbons exhibit ultrasoft magnetic behavior, especially GMI effect. Particular attention has been given to observation of crystallization kinetics."
}
@article{Olarte20081245,
title = "Susceptibility and EPR studies of synthesized by citrate precursor method",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1245 - 1247",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.065",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000414",
author = "J.A. Olarte and L.C. Moreno and A. Mariño",
keywords = "Perovskites manganites",
keywords = "EPR",
keywords = "a.c. susceptibility",
keywords = "Citrate method",
abstract = "X-band electron spin resonance (EPR) spectra were recorded in the temperature range 150–320 K on powdered samples of polycrystalline LaMn 1 - x Co x O 3 ( 0.1 ⩽ x ⩽ 0.5 ) synthesized by citrate precursor method. The temperature dependence of the EPR spectra parameters like, the peak-to-peak linewidth ( Δ Hpp ) and the EPR intensity, was analyzed. Both the EPR line intensity and the linewidth decreased by increasing the temperature. On the other hand changes in the lines shape from paramagnetic to ferromagnetic state were observed as a function Co content. This behavior correlates well with that observed in the transition temperature determined by a.c. susceptibility measurements."
}
@article{PulzaraMora20081248,
title = "Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1248 - 1250",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.064",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000426",
author = "A. Pulzara-Mora and E. Cruz-Hernández and J.S. Rojas-Ramírez and V.H. Méndez-García and M. López-López",
keywords = "Molecular beam epitaxy",
keywords = "Quantum dots",
keywords = "GaAs(1 0 0)",
keywords = "AFM",
keywords = "PL",
abstract = "In this work, we have studied the dependence of the size and luminescence of self-assembled InAs quantum dots (SAQDs) on the growth conditions. The SAQDs were grown on GaAs (1 0 0) substrates by molecular beam epitaxy (MBE). Their structural and optical properties were studied by atomic force microscopy (AFM), and photoluminescence spectroscopy (PL). The growth of the InAs SAQDs was in situ monitored by reflection high-energy electron diffraction (RHEED). The shape and size of the InAs SAQDs were significantly affected by the growth temperature and the arsenic over-pressure. We observe a decrease of the SAQDS density and an increase in their height by increasing the growth temperature, and/or decreasing the arsenic over-pressure. This is accompanied by a remarkable red-shift of the PL emission energy from 1.3 to 1.5 μ m ."
}
@article{Nossa20081251,
title = "Optical properties of supercrystals",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1251 - 1253",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.075",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000438",
author = "J.F. Nossa and A.S. Camacho",
keywords = "Quantum dots",
keywords = "Electronic properties",
keywords = "Optical properties",
abstract = "We present a systematic study of the dependence of the optical properties on the geometry of the quantum dots, which form a quantum dots chain. We obtain electronic structure of 1D supercrystals by using a tight-binding method based on the s and p orbitals and wave functions of the quantum dots for the on-site parameters. For the hopping parameter we choose the extended Hückel method. We find a drastic dependence on this parameter especially on the electronic band structure. We also relate the tight-binding matrix elements with the momentum matrix elements taking the k -space gradient of the Hamiltonian for calculating the dielectric spectra of supercrystals made of cylindrical, spherical, and conical quantum dots. We compare the optical behavior of the chains in the three geometries and report anomalies for the conical quantum dots chain."
}
@article{Correa20081254,
title = "Magneto-absorption of donor impurities in quantum-well wires",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1254 - 1256",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.066",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800044X",
author = "J.D. Correa and Z. Barticevic and M. Pacheco",
keywords = "Quantum wires",
keywords = "Impurities",
keywords = "Magneto-absorption",
abstract = "We show calculations for far-infrared absorption of shallow-donor impurities in quantum well wires in the presence of an external magnetic field. The wave functions and the eigenvalues are obtained in the effective-mass approximation by using an extended variational approach in which the ground and excited magneto-impurity states are simultaneously obtained. We investigate the allowed intra-donor transitions for radiation circularly polarized in the plane perpendicular to the magnetic field. We present results for the absorption coefficient as a function of the photon energy for several field strengths and arbitrary impurity positions."
}
@article{Tortschanoff20081257,
title = "Optical Kerr effect studies of the dynamics of confined water",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1257 - 1258",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.058",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000451",
author = "A. Tortschanoff and E. Portuondo Campa and F. van Mourik and M. Chergui",
keywords = "Optical Kerr effect",
keywords = "Microscopy",
keywords = "Water dynamics",
keywords = "Interfaces",
keywords = "Nanoconfinement",
abstract = "Time resolved optical Kerr effect measurements have been used to determine the orientational dynamics of water in the pores of ZrO2 nanostructured films. We demonstrate that local heating effects can safely be ignored and present our results which are manifestly incompatible with the existence of a bulk-like population of water molecules in the core of the pores."
}
@article{FernándezP20081259,
title = "Energy levels of on-axis donors in vertically stacked quantum dots with different morphologies",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1259 - 1260",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000463",
author = "J. Fernández P and L. Jaimes Osorio and C. Beltrán",
keywords = "Donor",
keywords = "Binding energy",
keywords = "Quantum dot",
abstract = "The effect of the quantum dots morphology on the binding energy for a neutral donor in two vertically coupled quantum dots is analyzed. The Hamiltonian is made separable by using the adiabatic procedure. For the limit case in which the quantum dots are merged, our results are in good agreement with those results obtained by other authors. We show that binding energy is strongly dependent on the quantum dot size and shape."
}
@article{Aristizábal20081261,
title = "Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in quantum wells",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1261 - 1263",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000475",
author = "P. Aristizábal and R.L. Restrepo and W. Ospina and C.A. Duque",
keywords = "Wannier excitons",
keywords = "Hydrostatic pressure",
keywords = "GaAs / Ga 1 - x Al x As ",
abstract = "In this work, we present theoretical calculation for the exciton binding energy in GaAs / Ga 0.7 Al 0.3 As quantum wells under hydrostatic pressure. Our results are obtained in the effective-mass approximation and using a variational procedure. The expectation values for the in-plane electron–hole distance for the 1 s , 2 s , 2 p x , 3 s , and 3 p x -like states are calculated. Finally, we discussed the intraexcitonic transition energies."
}
@article{Zuluaga20081264,
title = "Influence of the laser power on the optical properties of thin films prepared by laser evaporation",
journal = "Microelectronics Journal",
volume = "39",
number = "11",
pages = "1264 - 1265",
year = "2008",
note = "Papers CLACSA XIII, Colombia 2007",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000487",
author = "M. Zuluaga and A. Pardo and J. Torres and J.E. Alfonso",
keywords = "Thin films",
keywords = "Transmittance",
keywords = "XRD",
abstract = "MoO 3 thin films were prepared in this work by evaporating an MoO 3 target using a CO 2 laser operating on a continuous wave mode. The samples were grown at different laser light intensities. They were characterized through X-ray diffraction and transmittance measurements in the visible spectrum. The optical properties of the material were determined from the simulation of the experimental transmittance spectra. It was found that samples prepared at low laser intensities grow in the phase of MoO 3 . The samples present a mix of MoO 3 phases α , β and β ′ if the laser intensity is increased. The refraction index values decrease when laser radiation is increased."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "IFC - ",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00449-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004497",
key = "tagkey2008IFC"
}
@article{Mimouni20081167,
title = "Transmission-line-matrix (TLM) modeling of self-heating in AlGaN/GaN transistor structures",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1167 - 1172",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.076",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001122",
author = "S. Mimouni and A. Saidane and A. Feradji",
keywords = "HFETs",
keywords = "AlGaN/GaN heterojunction",
keywords = "Self-heating",
keywords = "TLM",
keywords = "Simulation",
abstract = "Self-heating in AlGaN/GaN (GaN—gallium nitride) heterostructures is an important issue for a large use of these devices in high-density power telecommunication applications. The equation of heat associated with this type of problem does not admit an analytical solution. Hence, we propose a numerical solution based on the use of a transmission line matrix (TLM). The method is easy to program and gives insights on temperature distribution throughout the device. It allows a better understanding of heat behavior and management at each layer that forms the structure. Some TLM simulation results have been compared with those obtained experimentally using integrated micro-Raman/infrared (IR) thermography methods, and have been found to agree within the bounds set by the resolution of the meshes used. The TLM has also the advantage upon other numerical methods of being unconditionally stable, one step and can adapt to complex geometries such as devices with several fingers."
}
@article{Cheknane20081173,
title = "An equivalent circuit approach to organic solar cell modelling",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1173 - 1180",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.053",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001134",
author = "Ali Cheknane and Hikmat S. Hilal and Fayçal Djeffal and Boumediène Benyoucef and Jean-Pierre Charles",
keywords = "MEH-PPV/PCBM",
keywords = "Organic solar cell",
keywords = "Exciton",
keywords = "Photo-current density vs. voltage plots",
keywords = "Modeling",
keywords = "Two-diode model",
abstract = "In this paper, we present a simulation study for a newly prepared organic solar cell, based on a composite of poly (2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylenevinylene (MEH-PPV) with [6, 6]-phenyl C60 butyric acid methyl ester (PCBM). Photo-current density vs. voltage (J–V) characteristics, for the cell, which were experimentally studied earlier, have been revisited here. The results indicated that the conduction mechanism in the organic solar cell is strongly influenced by the excitonic diffusion. Sound correlation, between theoretical and experimental photo-current density vs. voltage (J–V) plots, has been achieved. Moreover, the simulation clearly demonstrates that the performance of the tested device can be described, with sound accuracy, by a two-diode-equivalent model."
}
@article{Chattopadhyay20081181,
title = "Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1181 - 1188",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.043",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001109",
author = "Manju K. Chattopadhyay and Sanjiv Tokekar",
keywords = "AlmGa1−mN/GaN",
keywords = "HEMT",
keywords = "Non-linear polarization",
keywords = "2-DEG",
keywords = "Self-heating",
keywords = "Power dissipation",
keywords = "Analytical thermal model",
abstract = "A thermal model based on the polynomial relationship of ns and EF is presented. The effect of temperature rise due to self-heating is studied on various parameters viz. polarization, electron mobility, velocity saturation, low-field mobility and thermal conductivity of substrate. Parasitic resistances and channel length modulation were also taken into consideration. The relationship between self-heating effect and device parameters was studied. The model is based on closed-form expressions and does not require elaborate computation. After including self-heating effect in calculations of current–voltage characteristics, our results agreed well with published experimental data."
}
@article{Zeng20081189,
title = "Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1189 - 1194",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.084",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001092",
author = "Xiangbin Zeng and Huijuan Wang and Xiaowei Sun and Junfeng Li",
keywords = "Polycrystalline silicon thin film",
keywords = "Thin film transistors (TFTs)",
keywords = "MILC",
keywords = "Electric field-enhanced crystallization",
abstract = "The poly-Si thin film was obtained by electric field-enhanced metal-induced lateral crystallization technique at low temperature. Raman spectra, X-ray diffraction (XRD) and scan electron microscope (SEM) were used to analyze the crystallization state, crystal structure and surface morphology of the poly-Si thin film. Results show that the poly-Si has good crystallinity, and the electric field has the effect of enhancing the crystallization when DC electric voltage is added to the film during annealing. Secondary ion mass spectroscopy (SIMS) shows that the metal Ni improves the crystallization by diffusing into the a-Si thin film, so the crystallization of the lateral diffused region of Ni is the best. The p-channel poly-Si thin film transistors (TFTs) were fabricated by this large-size grain technique. The IDS−VDS and the transfer characteristics of the TFTs were measured, from which, the hole mobility of TFTs was 65 cm2/V s, the on and off current ratio was 5×106. It is a promising method to fabricate high-performance poly-Si TFTs at low temperature for applications in AMLCD and AMOLED."
}
@article{Han20081195,
title = "Two-dimensional ultrasonic anemometer using the directivity angle of an ultrasonic sensor",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1195 - 1199",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.090",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800116X",
author = "Dongwoo Han and Sunghyun Kim and Sekwang Park",
keywords = "Ultrasonic",
keywords = "Anemometer",
keywords = "Directivity angle",
keywords = "2D",
abstract = "There has been continuous research on the ultrasonic sensors [L.C. Lynnworth, Y. Liu, Ultasonic flowmeters: half-century progress report 1955–2005, Ultrasonics (2006) 1371–1378]. This study used the directivity characteristic based on phase measurement, which ultrasonic sensor has. Transmitter has wide directivity, and in its range of directivity, receivers are located to measure wind direction and velocity. The velocity experiments which are the result of this production system indicate that the system error rate is 2%. The wind direction measurements also give the same result, an error of ±3°. This result is similar to existing anemometers. However, this new anemometer could possibly have a much higher sampling rate, operating circuit and system structure, which could be much simpler than the previous anemometer."
}
@article{Suwa20081200,
title = "Multidisciplinary heat generating logic block placement optimization using genetic algorithm",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1200 - 1208",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.087",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001146",
author = "Tohru Suwa and Hamid Hadim",
keywords = "IC logic block placement",
keywords = "Multidisciplinary design optimization",
keywords = "IC thermal design",
keywords = "IC wiring length",
abstract = "A multidisciplinary optimization methodology for placement of heat generating semiconductor logic blocks on integrated circuit chips is presented. The methodology includes thermal and wiring length criteria, which are optimized simultaneously using a genetic algorithm. An effective thermal performance prediction methodology based on a superposition method is used to determine the temperature distribution on a silicon chip due to multiple heat generating logic blocks. Using the superposition method, the predicted temperature distribution in the silicon chip is obtained in much shorter time than with a detailed finite element model and with comparable accuracy. The main advantage of the present multidisciplinary design and optimization methodology is its ability to handle multiple design objectives simultaneously for optimized placement of heat generating logic blocks. Capabilities of the present methodology are demonstrated by applying it to several standard benchmarks. The multidisciplinary logic block placement optimization results indicate that the maximum temperature on a silicon chip can be reduced by up to 7.5 °C, compared to the case in which only the wiring length is minimized."
}
@article{Achigui20081209,
title = "A monolithic based NIRS front-end wireless sensor",
journal = "Microelectronics Journal",
volume = "39",
number = "10",
pages = "1209 - 1217",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.055",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001158",
author = "Hervé F. Achigui and Mohamad Sawan and Christian J.B. Fayomi",
keywords = "Near-infrared spectroreflectometry (NIRS)",
keywords = "Low noise",
keywords = "Low power",
keywords = "CMOS",
keywords = "Dynamic threshold MOSFET (DTMOS)",
keywords = "Operational amplifier",
keywords = "Transimpedance",
abstract = "This paper concerns a novel analog front-end of a wireless brain oxymeter smart sensoring instrument based on near-infrared spectroreflectometry (NIRS). The NIRS sensor makes use of dynamic threshold transistors (DTMOS) for low voltage (1 V), low power and low noise enhancement. The design is composed of a transimpedance amplifier (TIA) and an operational transconductance amplifier (OTA). The OTA differential input pairs use DTMOS devices for input common mode range enhancement. The OTA was fabricated in a standard 0.18 μm CMOS process technology. Measurements under a 5 pF capacitive load for the OTA gave a DC open loop gain of 67 dB, unity frequency gain bandwidth of 400 kHz, input and output swings of 0.58 and 0.7 V, a power consumption of 18 μW, and an input referred noise of 134 nV/√Hz at 1 kHz without any extra noise reduction techniques. The achieved features of the proposed oxymeter front-end will allow ultra low-light level measurements, high resolution and good temperature stability."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "IFC - ",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00404-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208004047",
key = "tagkey2008IFC"
}
@article{Rizvi20081101,
title = "Failure mechanisms of ACF joints under isothermal ageing",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1101 - 1107",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.045",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001043",
author = "M.J. Rizvi and C. Bailey and H. Lu",
keywords = "ACF",
keywords = "Failure",
keywords = "Contact resistance",
keywords = "Ageing",
keywords = "Computer modelling",
abstract = "The possible failure mechanisms of anisotropic conductive film (ACF) joints under isothermal ageing conditions have been identified through experiments. It has been found that ACF joints formed at higher bonding temperatures can prevent increases in the contact resistance for any ageing temperature. The higher the ageing temperature the higher the electrical failure rate is. The formation of conduction gaps between the conductive particles and the pads and damages to the metal coatings of the particle have been identified as the reasons behind the electrical failures during ageing. In order to understand the mechanism for the formation of the conduction gap and damages in metal coatings during the isothermal ageing, computer modelling has been carried out and the results are discussed extensively. The computer analysis shows that stresses concentrate at the edges of the particle–pad interface, where the adhesive matrix meets the particle. This could lead to subsequent damages and reductions in the adhesion strength in that region and it is possible for the conductive particle to be detached from the pad and the adhesive matrix. It is believed that because of this a conduction gap appears. Furthermore, under thermal loading the thermal expansion of the adhesive matrix squeezes the conductive particle and damages the metal coatings. Experimental evidences support this computational finding. It is, therefore, postulated that if an ACF-based electronic component operates in a high temperature aging condition, its electrical and mechanical functionalities will be at risk."
}
@article{Luo20081108,
title = "Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1108 - 1111",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.083",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001055",
author = "Weijun Luo and Xiaoliang Wang and Hongling Xiao and Cuimei Wang and Junxue Ran and Lunchun Guo and Jianping Li and Hongxin Liu and Yanling Chen and Fuhua Yang and Jinmin Li",
keywords = "AlGaN/GaN",
keywords = "High electron mobility transistor (HEMT)",
keywords = "Si (1 1 1)",
abstract = "AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN HEMT samples exhibited a maximum crack-free area of 8 mm×5 mm, XRD GaN (0 0 0 2) full-width at half-maximum (FWHM) of 661 arcsec and surface roughness of 0.377 nm. The device with a gate length of 1.4 μm and a gate width of 60 μm demonstrated maximum drain current density of 304 mA/mm, transconductance of 124 mS/mm and reverse gate leakage current of 0.76 μA/mm at the gate voltage of −10 V."
}
@article{Cai20081112,
title = "Fabrication of a MEMS inertia switch on quartz substrate and evaluation of its threshold acceleration",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1112 - 1119",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.068",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001031",
author = "Haogang Cai and Zhuoqing Yang and Guifu Ding and Xiaolin Zhao",
keywords = "Inertia micro-switch",
keywords = "MEMS",
keywords = "Threshold acceleration",
keywords = "Surface micromachining",
keywords = "Simulation",
abstract = "Based on surface micromachining technology, a micro-electro-mechanical system (MEMS) inertia switch with single sensitive direction and reverse impact protection has been designed and fabricated on quartz substrate. The switch is laterally driven (i.e. its sensitive direction is parallel to the substrate plane), in which the conjoined snake springs are used to fix and suspend the movable electrode (i.e. proof mass), and blocks are used to protect the device against reverse impact. The relationship between the threshold acceleration ath and the intrinsic frequency ω 0 = k / m has been investigated by theoretical analysis and finite element simulation, respectively, based on which the geometrical parameters of the switch can be decided to meet design objective. The proof mass thickness H was chosen as a variable, as the micro-fabrication of the device was carried out by low-cost and convenient multi-layer electroplating technology, where H can be easily adjusted while the plane geometry remains the same. The stress distribution of the switch in the contact process was also simulated. Packaged micro-switches were tested by dropping hammer experiments, which generated half-sine wave acceleration as in reality. The measured threshold acceleration generally met the design objective of 60g and the response time was in the order of 10−4 s, both agreed with the simulated results."
}
@article{Gui20081120,
title = "Study on TiO2-doped ZnO thick film gas sensors enhanced by UV light at room temperature",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1120 - 1125",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.052",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001079",
author = "Yanghai Gui and Shumian Li and Jiaqiang Xu and Chao Li",
keywords = "ZnO",
keywords = "TiO2",
keywords = "UV light",
keywords = "Gas sensing",
keywords = "Room temperature",
abstract = "The gas-sensing properties of titanium oxide (TiO2)-doped zinc oxide (ZnO) thick film sensor specimens to typical ethanol vapor under UV light activation at room temperature have been investigated. Zinc nanoparticles were mixed with commercial TiO2 in various weight percentage (0%, 1%, 5%, and 10%) and sintered at 650 °C for 2 h to prepare the thick film sensors. The sensors exhibit better photosensitivity and gas sensitivity to ethanol analyte. The response and recovery times are within 8 s. TiO2 doping can improve the sensors stability and reproducibility. X-ray diffraction (XRD) and scanning electron microscopy (SEM) characterization of the film materials revealed that Zn2TiO4 and TiO2 phases hindered the rod- or needle-like structure growth and subsequently affected the gas sensitivity. UV absorption spectra of the sensing film material completely dispersed in ethanol solution exhibited that the red shifts were caused with the doping of a small amount of TiO2 into ZnO then blue shift was caused with higher TiO2 level. The results of the UV spectra are well consistent with the photosensitive performance. The maximum sensitivity can be achieved by doping the amount of TiO2 (5 wt%)."
}
@article{Lv20081126,
title = "Fabrication of arrays of line with nanoscale width and large length by electron beam lithography with high-precision stage",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1126 - 1129",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.080",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001067",
author = "Shi-Long Lv and Zhi-Tang Song and Song-Lin Feng",
keywords = "High-precision stage",
keywords = "Electron beam lithography",
keywords = "SU8 resist",
keywords = "Deflector gain factors",
abstract = "Fabrication of arrays of line with a nanoscale width less than 150 nm and length over 1500 μm on SU8 resist was proposed when using SEM-converted exposure system with high-precision positioning stage. Investigating the effect of the stage movement and the local-aperture contamination on stitching errors, we found that changing the deflector gain factors and the cleaning aperture after each exposure made it possible to improve stitching accuracy. Overlapping length 200 nm of line arrays was obtained with increase of 0.35% in x direction and 0.16% in y direction for deflection gain factors."
}
@article{Jacquemod20081130,
title = "Design and modelling of a multi-standard fractional PLL in CMOS/SOI technology",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1130 - 1139",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.069",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000992",
author = "Gilles Jacquemod and Lionel Geynet and Benjamin Nicolle and Emeric de Foucauld and William Tatinian and Pierre Vincent",
keywords = "Multi-standard",
keywords = "PLL",
keywords = "CMOS/SOI",
keywords = "RF system design",
keywords = "Behavioural modelling",
abstract = "This paper deals with the design of a fractional PLL for wireless multi-standard applications. This circuit has been produced using CMOS/SOI technology, with body voltage to control power consumption and phase noise performance. Five standards are covered by this structure: GSM (900 MHz), DCS (1.8 GHz), Bluetooth (2.45 GHz) and 802.11a (5.8 GHz). Based on multi-engine simulators, associated with a hierarchical models library, a virtual RF system platform, which allows designing complex SoCs, is also presented. The PLL, including digital and analogue parts, constitutes a very good benchmark to validate this platform."
}
@article{Yang20081140,
title = "I–V characteristics of a methanol sensor for direct methanol fuel cell (DMFC) as a function of deposited platinum (Pt) thickness",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1140 - 1143",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003990",
author = "Jin Seok Yang and Jung Ho Park and Seong-Il Kim and Seo Young Kim and Yong Tae Kim and Il Ki Han",
keywords = "DMFC",
keywords = "Methanol sensor",
keywords = "Catalyst electrode",
keywords = "I–V characteristics",
abstract = "We have fabricated methanol sensor for monitoring the methanol concentration in direct methanol fuel cells. A thin composite nafion membrane was used as an electrolyte. We have analyzed the I–V characteristic of the fabricated methanol sensor as functions of methanol concentration, catalyst electrode and platinum (Pt) thickness. When we measured the sensor with 10 nm Pt and at 1 V, the current value was 1.30×10−6, 1.96×10−6, and 2.80×10−6 A for three methanol concentration of 1, 2, and 3 M, respectively. And when the methanol concentration was fixed at 2 M, the current value of the fabricated device with Pt of 5, 10 and 15 nm was 3.06×10−6, 1.96×10−6, and 1.00×10−6 A, respectively."
}
@article{Gargas20081144,
title = "Investigation of polarization anisotropy in individual porous silicon nanoparticles",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1144 - 1148",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.088",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001814",
author = "Daniel J. Gargas and Donald J. Sirbuly and Michael D. Mason and Paul J. Carson and Steven K. Buratto",
keywords = "Porous silicon",
keywords = "Silicon nanocrystal",
keywords = "Photoluminescence",
keywords = "Polarization",
keywords = "Anisotropy",
abstract = "Polarization anisotropy is investigated in single porous silicon nanoparticles containing multiple chromophores. Two forms of nanoparticle samples are studied; low current density (LCD) and high current density (HCD). Photoluminescence measurements reveal that LCD samples exhibit red-shifted spectra and HCD particles display a blue-shifted spectrum. We utilize single molecule spectroscopy to detect the polarization effects of spatially isolated individual nanoparticles, and show that LCD nanoparticles demonstrate strong polarization anisotropy, whereas a dynamic polarization response is collected from HCD nanoparticles."
}
@article{Gong20081149,
title = "Analysis and optimization of leakage current characteristics in sub-65 nm dual Vt footed domino circuits",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1149 - 1155",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001006",
author = "Na Gong and Baozeng Guo and Jianzhong Lou and Jinhui Wang",
keywords = "Footed domino circuit",
keywords = "Dual threshold voltage",
keywords = "Leakage current",
keywords = "Process variation",
abstract = "The inputs and clock signals combination sleep state dependent leakage current characteristics is analyzed and the optimal sleep state is examined in sub-65 nm dual Vt footed domino circuits. Simulations based on 65 and 45 nm BSIM4 models show that the conventional CHIL state (the clock signal is high and inputs are all low) is ineffective for lowering the leakage current and the conventional CHIH state (the clock signal and inputs are all high) is only effective to suppress the leakage current at high temperature other than the high fan-in domino circuits. For the high fan-in footed domino circuits at high temperature and most of footed domino circuits at room temperature, the CLIL (the clock signal and inputs are all low) state is preferable to reduce the leakage current. Further, the influence of the process variations on the leakage current characteristics of the dual Vt footed domino circuits is also evaluated. It is observed that the average leakage current is universally higher than the date reported in the normal corner and the CLIL state is the optimum choice considering the leakage current reduction and the robustness to the process variations simultaneously."
}
@article{Yuan20081156,
title = "CMOS current-mode integrating receivers for Gbytes/s parallel links",
journal = "Microelectronics Journal",
volume = "39",
number = "9",
pages = "1156 - 1165",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.031",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001018",
author = "Fei Yuan and Tao Wang",
keywords = "Class A and class AB integrating receivers",
keywords = "Parallel links",
keywords = "Active inductors",
abstract = "This paper presents the design of fully differential current-mode integrating receivers for Gbytes/s parallel links. Both class A and class AB configurations are considered. The proposed receivers consist of a transimpedance front-end that provides a low and tunable matching impedance to the channels to accommodate current-mode signaling, an integrating stage that acts as a low-pass filter to suppress the transient disturbances coupled to the channels and receiver, and a regenerative sense amplifier to amplify the output voltage of the preceding integrator to full swing. The class AB configured sense amplifier provide a voltage gain that is twice that of class A sense amplifier, enabling a fast sensing and latching. The proposed receiver has been implemented in UMC 0.13 μ m , 1.2 V CMOS technology and analyzed using Spectre from Cadence Design Systems with BSIM3v3 device models. Simulation results demonstrate that the proposed class current-mode integrating receivers provide full output voltage swing when the data rate is 2.5 Gbyte/s."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "IFC - ",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00336-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208003364",
key = "tagkey2008IFC"
}
@article{Bernard20081031,
title = "European Nano Systems 2006",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1031 - ",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003187",
author = "Bernard and Courtois"
}
@article{Kolonis20081032,
title = "Towards a holistic CAD platform for nanotechnologies",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1032 - 1040",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002613",
author = "E. Kolonis and M. Nicolaidis",
keywords = "Nano-CAD",
keywords = "Bio-inspired systems",
keywords = "Complex systems",
abstract = "Silicon-based CMOS technologies are predicted to reach their ultimate limits by the middle of the next decade. Research on nanotechnologies is actively conducted in a world-wide effort to develop new technologies able to maintain the Moore's law. They promise revolutionizing the computing systems by integrating tremendous numbers of devices at low cost. These trends will provide new computing opportunities, have a profound impact on the architectures of computing systems, and require a new paradigm of CAD. The paper presents a work in progress on this direction. It is aimed at fitting requirements and constraints of nanotechnologies, in an effort to achieve efficient use of the huge computing power promised by them. To move toward this goal we are developing CAD tools able to exploit efficiently the huge computing capabilities promised by nanotechnologies in the domain of simulation of complex systems composed by huge numbers of relatively simple elements."
}
@article{Martorell20081041,
title = "Cell architecture for nanoelectronic design",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1041 - 1050",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003114",
author = "Ferran Martorell and Antonio Rubio",
keywords = "Nanoarchitecture",
keywords = "Fault-tolerance",
keywords = "Defect-tolerance",
keywords = "Averaging cell",
abstract = "Nanotechnology research has already proved and implemented several nanoscale devices. However, due to high defect ratios, large parameter variability and reduced noise margins, special architectures are needed to build reliable mid/large nanocircuits. Up to date several architectures have been proposed to design circuits in the nanoscale, but they do not consider the entire nanoscale environment. In this work, we propose and analyze a cell architecture based on the averaging of multiple nanodevices which is capable of alleviating the three main problems of the nanodevices at the gate level (internal noise, device parameter variation and defects). The proposed structure has a low implementation complexity which further reduces the fabrication defects. Using this cell architecture we present 2 and 3-input NAND gates showing their output response and error probabilities. Finally, we show that it is possible to improve the cell error tolerance by taking advantage of interferences among nanodevices which reduces the standard deviation by a factor larger than N ."
}
@article{Hamdi20081051,
title = "DNA nanorobotics",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1051 - 1059",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003175",
author = "Mustapha Hamdi and Antoine Ferreira",
keywords = "Molecular dynamics simulation",
keywords = "DNA proteins",
keywords = "Nanorobotics",
keywords = "Bio-nanotechnology",
abstract = "This paper presents a molecular mechanics study of nanorobotic structures using molecular dynamics (MD) simulations coupled to virtual reality (VR) techniques. The operator can design and characterize through molecular dynamics simulation the behavior of bionanorobotic components and structures through 3D visualization. The main novelty of the proposed simulations is based on the mechanical characterization of passive/active robotic devices based on double stranded DNA molecules. Their use as new DNA-based nanojoint and nanotweezer are simulated and results are discussed."
}
@article{Kervalishvili20081060,
title = "Nanostructures, magnetic semiconductors and spintronics",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1060 - 1065",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002601",
author = "Paata Kervalishvili and Alexander Lagutin",
keywords = "Semiconductor",
keywords = "Spintronics",
keywords = "Nanostructure",
keywords = "Magnetic properties",
keywords = "Spin-polarized transport",
abstract = "The aim of this paper is to give a brief overview of recent advances in the area of semiconductor nanomaterials, which represent extremely promising applications for materials with the spin-polarized transport of the charge carriers. It is shown on the basis of the last theoretical and experimental achievements that the development of diluted semiconductors with the controlled disorder and the wide energy gaps as well as the study of their molecular structures are very prospective routes for producing of novel magnetic semiconductors."
}
@article{Tafuri20081066,
title = "Coherent quasiparticle transport in grain boundary junctions employing high-Tc superconductors",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1066 - 1069",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.094",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002339",
author = "F. Tafuri and A. Tagliacozzo and D. Born and D. Stornaiuolo and E. Gambale and D. Dalena and P. Lucignano and B. Jouault and F. Lombardi and A. Barone and B.L. Altshuler",
keywords = "Mesoscopic transport",
keywords = "High Tc superconductors",
abstract = "Magneto-fluctuations of the normal resistance RN have been reproducibly observed in YBa2Cu3O7−δ biepitaxial grain boundary junctions at low temperatures. We attribute them to mesoscopic transport in narrow channels across the grain boundary line, occurring even in the presence of large voltage drops. The Thouless energy appears to be the relevant energy scale. Possible implications on the understanding of coherent transport of quasiparticles in high critical temperature superconductors (HTS) and of the dissipation mechanisms are discussed."
}
@article{Hazdra20081070,
title = "Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1070 - 1074",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001255",
author = "P. Hazdra and J. Voves and J. Oswald and K. Kuldová and A. Hospodková and E. Hulicius and J. Pangrác",
keywords = "Quantum dots",
keywords = "Photoluminescence",
keywords = "Photomodulated reflectance",
keywords = "GaAs",
keywords = "InAs",
keywords = "MOVPE",
abstract = "Structures with vertically correlated self-organised InAs quantum dots (QDs) in a GaAs matrix were grown by the low-pressure metal–organic vapour phase epitaxy (MOVPE) and characterised by different microscopic techniques. Photoluminescence in combination with photomodulated reflectance spectroscopy were applied for characterisation of QDs structures. We show that combination of both methods allows detecting optical transitions originating both from QDs and wetting (separation) layers, which can be than compared with those obtained from numerical simulations. On the basis of obtained results, we demonstrate that photoreflectance spectroscopy is an excellent tool for characterisation of QDs structures wetting layers and for identification of spacer thicknesses in vertically stacked QDs structures."
}
@article{HaurKao20081075,
title = "Charge-trapping properties of poly-silicon oxides by rapid thermal N2O process",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1075 - 1079",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001705",
author = "Chyuan Haur Kao and C.S. Chen and C.H. Lee",
keywords = "Charge-trapping",
keywords = "N2O",
abstract = "The polyoxide with nitrogen incorporation by RTN2O process can obtain smoother interface of the polyoxide/polysilicon, thus improving the characteristics of polyoxides. However, too much nitrogen does not improve, instead, degrades, the quality of the polyoxide and to induce thickness non-uniformity. It can be found that initial hole-trapping phenomenon was observed in the polyoxides grown by rapid thermal N2O oxidation process and the higher the growth temperature is, the larger the hole-trapping rate is. The larger hole-trapping is due to more excessive nitrogen release in short time at the polyoxide/polysilicon interface at high temperature oxidation, which may induce large undulations at the Si/SiO2 interface and result in localized high electric fields to obtain smaller Qbds. However, the charge-trapping properties can be improved by the N2O-annealed process at proper temperature due to proper amount of nitrogen incorporated into the polyoxide and piled up at the interface."
}
@article{Zhang20081080,
title = "Characteristics of β-SiC/Si heterojunction with a SiGe buffer film",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1080 - 1082",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.044",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001110",
author = "Caizhen Zhang and Su Liu",
keywords = "β-SiC/SiGe/P-Si heterojunction",
keywords = "Buffer layer",
keywords = "SEM",
keywords = "RR",
abstract = "In the present work, preparation of SiGe thin buffer film was performed on p-Si single crystals, non-doped β-SiC epitaxial layer was grown on SiGe/Si substrate by means of lower pressure chemical vapor deposition (LPCVD) and ohmic contacts were formed to fabricate typical multilayer sandwich structure of Al/β-SiC/SiGe/P-Si/Al heterojunction. Contrasted β-SiC/SiGe/P-Si heterojunction with β-SiC/P-Si, scanning electron microscope (SEM) images, reverse breakdown voltage, I–V and C–V characteristics are studied. Theory and experimental results show that introduction of SiGe buffer layer can improve interface properties of heterojunction, reverse breakdown voltage and rectification ratio (RR) of the heterojunction."
}
@article{Xu20081083,
title = "Compound noise separation in digital circuits using blind source separation",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1083 - 1092",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.070",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800102X",
author = "Jingye Xu and Vivek P. Nigam and Abinash Roy and Masud H. Chowdhury",
keywords = "Adaptive signal processing",
keywords = "Blind source separation",
keywords = "Compound noise separation",
keywords = "Integrated circuit noise",
keywords = "Independent component analysis",
abstract = "Analysis of individual noise sources in pre-nanometer circuits cannot take into account the evolving reality of multiple noise sources interacting with each other. Noise measurement made at an evaluation node will reflect the cumulative effect of all the active noise sources, while individual and relative severity of various noise sources will determine what types of remedial steps can be taken, pressing the need for development of algorithms that can analyze the contributions of different noise sources when a noise measurement is available. This paper addresses the cocktail-party problem inside integrated circuits with multiple noise sources. It presents a method to extract the time characteristics of individual noise source from the measured compound voltage in order to study the contribution and properties of each source. This extraction is facilitated by application of blind source separation technique, which is based on the assumption of statistical independence of various noise sources over time. The estimated noise sources can aid in performing timing and spectral analysis, and yield better circuit design techniques."
}
@article{Tayade20081093,
title = "Small-delay defect detection in the presence of process variations",
journal = "Microelectronics Journal",
volume = "39",
number = "8",
pages = "1093 - 1100",
year = "2008",
note = "European Nano Systems (ENS) 2006 European Nano Systems (ENS) 2006",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000098",
author = "Rajeshwary Tayade and Jacob Abraham",
keywords = "Small-delay defects",
keywords = "Resistive open defect",
keywords = "Delay test",
keywords = "Path selection",
keywords = "Short paths",
abstract = "Interconnect-based defects such as partial opens are becoming more prevalent in nanoscale designs. These are latent defects that affect circuit reliability and can be modeled as small-delay defects. Detecting such defects therefore requires faster than at-speed test clocks. In the paper we analyze the uncertainty introduced by process variations in detecting these defects. We propose new path selection algorithms that increase the probability of defect detection by taking into account the variability in path delays. Our results show that the new technique detects much smaller defects than the traditional approach of selecting the longest paths for test."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "IFC - ",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00226-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002267",
key = "tagkey2008IFC"
}
@article{Garimella2008929,
title = "Foreword",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "929 - ",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003953",
author = "Suresh V. Garimella and Amy S. Fleischer"
}
@article{Yavatkar2008930,
title = "Platform wide innovations to overcome thermal challenges",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "930 - 941",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003801",
author = "Raj Yavatkar and Murli Tirumala",
keywords = "Thermal",
keywords = "Acoustic",
keywords = "Performance",
keywords = "Packaging",
abstract = "As the trend towards higher performance with increased integration continues, the emerging platform technology challenges require innovation across multiple disciplines at low cost to deliver compelling products. Customers demand increased performance to enable new usage models across all market segments in ever-constrained form factors. To complement voltage scaling and leakage issues associated with silicon, it is necessary to advance the thermal management and acoustics technologies at the system level. On the other hand, architectural tradeoffs are required to extract maximum performance for a given energy budget. In this paper, we outline the challenges and present a few ideas to expand the performance envelope of future platforms. These challenges should also function as a motivation to the research community at large to develop breakthrough innovations."
}
@article{Kubota2008942,
title = "Thermal challenges deriving from the advances of display technologies",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "942 - 949",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.123",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002364",
author = "S. Kubota and A. Taguchi and K. Yazawa",
keywords = "Laser",
keywords = "Light emitting diode",
keywords = "LCD-TV",
keywords = "Diffractive MEMS",
keywords = "Convection cooling",
keywords = "Heat spreader",
abstract = "After a brief overview on development history of solid-state light sources, an light emitting diodes (LED)-backlit liquid crystal display television (LCD-TV) and a diffractive micro-electro-mechanical-system (MEMS) (GxL) laser projector are characterized for key performance indicators for their light sources, with highlight on thermal noise caused by Brownian motion of GxL ribbons. Then, we will propose a solution for thermal challenges in such a flat panel display using light sources with moderate power dissipation density, followed by discussion on necessity of advanced thermal spreader in cooling lasers with extremely high power dissipation density."
}
@article{Bulusu2008950,
title = "One-dimensional thin-film phonon transport with generation",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "950 - 956",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.007",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700314X",
author = "A. Bulusu and D.G. Walker",
keywords = "Boltzmann transport",
keywords = "Phonon",
keywords = "Heat generation",
keywords = "Hot spot",
abstract = "The Boltzmann transport equation is often used for non-continuum transport when the mean free path of phonons is of the order of device sizes. One particular application involves heat generation in electronic devices. In a highly scaled MOSFET, for example, the majority of the heat is produced in a localized region immediately below the gate on the drain side. The size of this generation region is often smaller than the mean free path of phonons, which suggests the generation Knudsen number is large and non-continuum models are appropriate. Using a one-dimensional BTE and diffusion equation, a comparison between the continuum and non-continuum models is made. The focus of this comparative study is the behavior of each model for various Knudsen numbers for the device size and generation region. Results suggest that non-continuum distributions are similar to continuum distributions except at boundaries where the jump condition results in deviations from continuum distributions. Furthermore, the peak energy in a device predicted using the noncontinuum formulation is always less than that of the continuum model regardless of generation Knudsen number, which is in contrast to other prevailing studies."
}
@article{Bahadur2008957,
title = "Energy minimization-based analysis of electrowetting for microelectronics cooling applications",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "957 - 965",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003667",
author = "V. Bahadur and S.V. Garimella",
keywords = "Electrowetting",
keywords = "Droplet movement",
keywords = "Contact angle",
keywords = "Cassie",
keywords = "Wenzel",
abstract = "Electrowetting (EW)-induced droplet motion has been studied over the last decade in view of its promising applications in the field of microfluidics. The objective of the present work is to analyze the physics underlying two specific EW-based applications for microelectronics thermal management. The first of these involves heat absorption by liquid droplets moving on the surface of a chip under EW actuation. Droplet motion between two flat plates under the influence of an electrowetting voltage is analyzed. An energy minimization framework is employed to predict the actuation force on a droplet. This framework, in combination with semi-analytical models for the forces opposing droplet motion, is used to develop a model that predicts transient EW-induced droplet motion. The second application is targeted at hot-spot thermal management and relies on the control of droplet states on artificially structured surfaces through an applied EW voltage. The influence of an electrowetting voltage in determining and altering the state of a static droplet resting on a rough surface is analyzed. An energy minimization-based modeling approach reveals the influence of interfacial energies, surface roughness parameters and electric fields in determining the apparent contact angle of a droplet in the Cassie and Wenzel states under the influence of an EW voltage. The model is used to establish preliminary criteria to design rough surfaces for use in the hot-spot mitigation application. The concept of an electrically tunable thermal resistance switch for hot-spot cooling applications is introduced and analyzed."
}
@article{Oprins2008966,
title = "Convection heat transfer in electrostatic actuated liquid droplets for electronics cooling",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "966 - 974",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003825",
author = "H. Oprins and J. Danneels and B. Van Ham and B. Vandevelde and M. Baelmans",
keywords = "Electronics cooling",
keywords = "Electrowetting",
keywords = "Thermal modelling",
abstract = "In this paper, the internal flow and heat transfer inside the electrostatic actuated droplets are studied for different droplet velocities by means of detailed flow computations. It is shown that the internal droplet flow exhibits a parabolic characteristic at one hand and that the presence of two convection cells decreases the heat transfer to the lower part of the droplet, thereby limiting the overall heat transfer through the droplet. A typical enhancement of the heat transfer with a factor 2 is achieved with respect to the minimal value that would be obtained assuming heat conduction as the only means of heat transfer in the liquid. Further an analytic lumped model is presented to estimate the transient average droplet temperature with an accuracy of 5% compared to the full transient computational fluid dynamics modelling."
}
@article{Baummer2008975,
title = "Force-fed evaporation and condensation utilizing advanced micro-structured surfaces and micro-channels",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "975 - 980",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001334",
author = "Thomas Baummer and Edvin Cetegen and Michael Ohadi and Serguei Dessiatoun",
keywords = "Heat transfer",
keywords = "Two-phase flow",
keywords = "Enhanced surfaces",
keywords = "Boiling",
keywords = "Condensation",
abstract = "This paper presents results of an experimental study on phase change cooling of high flux electronics utilizing an innovative phase-change technique involving force-fed evaporation and condensation. The technique utilizes high-performance micro-structured surfaces consisting of alternating fins and channels, coupled with a force-fed mechanism in the evaporator and condenser. The force-fed mechanism provides a highly vigorous micro-channel convective heat transfer environment with the net effect of substantially higher heat transfer coefficients without the high-pressure drop penalties that are normally associated with such flows. Our recent results demonstrate dissipation heat flux levels well above 300 W/cm2 with corresponding heat transfer coefficients of close to 90,000–100,000 W/m2 K, using HFE-7100 as the working fluid. For the condensation mode, the force-fed method produces heat fluxes up to 58 W/cm2 with a heat transfer coefficient of 32,000 W/m2 K using HFE-7100."
}
@article{Ezzahri2008981,
title = "A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "981 - 991",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001267",
author = "Y. Ezzahri and G. Zeng and K. Fukutani and Z. Bian and A. Shakouri",
keywords = "Microrefrigerator",
keywords = "Si/SiGe superlattices",
keywords = "Bulk SiGe",
keywords = "Heat transfer",
keywords = "Thermoelectric cooling",
keywords = "Thermionic cooling",
keywords = "Thermal quadrupoles method",
abstract = "Most of the conventional thermal management techniques can be used to cool the whole chip. Since thermal design requirements are mostly driven by the peak temperatures, reducing or eliminating hot spots could alleviate the design requirements for the whole package. Monolithic solid-state microcoolers offer an attractive way to eliminate hot spots. In this paper, we review theoretical and experimental cooling performance of silicon-based microrefrigerators on a chip. Both Si/SiGe superlattice and also bulk SiGe thin film devices have been fabricated and characterized. Direct measurement of the cooling along with material characterization allows us to extract the key factors limiting the performance of these microrefrigerators. Although Si/SiGe superlattice has larger thermoelectric power factor, the maximum cooling of thin film refrigerators based on SiGe alloys are comparable to that of superlattices. This is due to the fact that the superlattice thermal conductivity is larger than bulk SiGe alloy by about 30%."
}
@article{Mongia2008992,
title = "Skin cooling and other challenges in future mobile form factor computing devices",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "992 - 1000",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003795",
author = "Rajiv Mongia and A. Bhattacharya and Himanshu Pokharna",
keywords = "Mobile computers",
keywords = "Electronics cooling",
keywords = "Thermodynamic limit",
keywords = "Skin temperature",
keywords = "Laminar wall jets",
abstract = "In this paper, we describe several of the cooling challenges in the notebook space as well as outline techniques for evaluating the benefit of new thermal technologies. Some of the challenges described in this paper include thermodynamic limits (total heat within the system), skin temperatures, and component temperatures other than the microprocessor. Specifically, in this paper we will describe a new technology for better cooling skins called laminar wall jets. This technology is useful in reducing bottom skin temperatures of notebooks by up to 20%."
}
@article{Holland20081001,
title = "Flow boiling of FC-72 from a screen laminate extended surface matrix",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "1001 - 1007",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003679",
author = "B. Holland and N. Ozman and R.A. Wirtz",
keywords = "Flow boiling",
keywords = "Screen laminations",
keywords = "Extended surfaces",
keywords = "FC-72",
abstract = "An investigation is conducted to assess the thermal performance of multi-layered screen laminates when used as porous extended surface matrices (ESMs) in vertical up flow boiling. A dielectric coolant (FC-72) is used as the working fluid. Four specimens are constructed having different mesh-geometries and/or number of layers. Channel Reynolds numbers are varied from 2700 to 8500 and ESM base superheats are varied from 0 to 40 °C.
Results indicate that devices equipped with this technology can tolerate steady heat fluxes in excess of 100 W/cm2 (based on the base cross section area of the ESM) with corresponding ESM base superheats below 30 °C. Thermal performance (the increase in heat flux at a given superheat) increases by as much as 30% for a 3-fold increase in Reynolds number. The total capacity of the ESM (the product of heat flux and base cross section area) increases approximately linearly with ESM thickness. A feature of this technology is that it greatly extends the heat flux working range over an unenhanced surface."
}
@article{Raad20081008,
title = "Thermal characterization of embedded electronic features by an integrated system of CCD thermography and self-adaptive numerical modeling",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "1008 - 1015",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003643",
author = "Peter E. Raad and Pavel L. Komarov and Mihai G. Burzo",
keywords = "Temperature mapping",
keywords = "Microelectronics",
keywords = "Inverse heat transfer problem",
keywords = "Thermoreflectance",
keywords = "Adaptive simulation",
keywords = "Coupled experimental and numerical approach",
abstract = "This work provides a practical application of a coupled experimental–computational system devised for the full characterization of the thermal behavior of complex three-dimensional active submicron electronic devices. A thermoreflectance thermography (TRTG) technique is used to non-invasively measure the 2D surface temperature field of an activated device, with submicron spatial resolution. The measured planar temperature distribution field is then used as input for an ultra-fast inverse computational solution to derive the three-dimensional temperature distribution throughout the device. For the purposes of this investigation, test micro-heater devices were constructed on epitaxial layers of natural (Si) and isotopically pure (Si28) silicon. Then, all devices were activated and measured with the TRTG technique. In order to demonstrate the coupled experimental–computational system, the measured temperature fields of the samples whose thermal properties are known (Si) were used to extract critical physical parameters (the oxide layer thickness and the effective heater length). Then, since the devices with unknown thermal properties (Si28) share the same construction with the Si devices, the extracted parameters were used together with the measured planar temperature fields to derive the thermal conductivity of Si28. The extracted oxide layer thickness and thermal conductivity of Si28 compared very closely to values obtained by other independent direct methods."
}
@article{Whelan20081016,
title = "Improved compact thermal model for studying 3-D interconnect structures with low-k dielectrics",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "1016 - 1022",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001243",
author = "A. Whelan and Y. Joshi and W. King",
keywords = "3-D interconnect",
keywords = "Compact thermal model",
keywords = "Back end interconnect",
keywords = "Reduced thermal model",
abstract = "Compact thermal modeling is gaining significance as interconnect feature sizes continue to shrink, requiring increased computation times for full-field multi-scale simulations. Improved and expanded uses of an existing compact thermal modeling approach found in Gurrum et al. [A compact approach to on-chip interconnect heat conduction modeling using the finite element method, ASME J. Electron. Packaging (2007), accepted], Gurrum et al. [A novel compact method for thermal modeling of on-chip interconnects based on the finite element method, ASME, EEP 3, Electron. Photon. Packing Electr. Syst. Photon. Des. Nanotechnol. (2003) 441–445] are presented here. The first improvement rectifies a singularity that occurs in the previous compact model. This change allows for greater flexibility in mesh application, and a greater number of structures that can be analyzed. This work focuses on the application of the compact thermal model to two interconnect structures. The first geometry [S. Im, N. Srivastava, K. Banerjee, K. Goodson, Scaling analysis of multilevel interconnect temperatures for high performance ICS, IEEE Trans. Electron. Dev. 52 (12) (2005) 2710–2719] is a typical interconnect structure based on the ITRS 65 nm technology node. A new transient compact model was applied to another geometry [J. Zhang, M. Bloomfield, J. Lu, R. Gutmann, T. Cale, Thermal stresses in 3D IC inter-wafer interconnects, Microelectron. Eng. 82 (3–4) (2005) 534–547], which is a more advanced technology with a through-the-die via structure. The second improvement of the compact model is extending the steady state finite element based model into a transient version. Full-field simulations have very large storage and memory requirements for transient analysis of complex structures. The advantage of this compact model is that in addition to increased efficiency, the methodology and implementation is similar to a traditional finite element analysis (FEA)."
}
@article{McAllister20081023,
title = "Strategies for effective use of exergy-based modeling of data center thermal management systems",
journal = "Microelectronics Journal",
volume = "39",
number = "7",
pages = "1023 - 1029",
year = "2008",
note = "Thermal Challenges in Next Generation Electronic Systems (THERMES II 2007)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.005",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700362X",
author = "Sara McAllister and Van P. Carey and Amip Shah and Cullen Bash and Chandrakant Patel",
keywords = "Exergy",
keywords = "Availability",
keywords = "Data centers",
keywords = "Thermal management",
keywords = "Modeling strategy",
abstract = "As power densities in data centers quickly increase, the inefficiencies of yesterday are becoming costly data center thermal management problems today. One proposed method to address the inefficiencies of state-of-the-art data centers is to use the concept of exergy. To this end, earlier investigations have used a finite-volume, uniform-flow computer model to analyze exergy destruction as a means of identifying inefficiencies. For this type of exergy-based program to be a useful engineering tool, it should: (i) be easy to set up, viz. establish grid size and impose system parameters; (ii) have a formulation that is solvable and numerically stable; (iii) be executable in reasonable time on a workstation machine with typical processor speed and memory; and (iv) model the physics with acceptable accuracy. This investigation explored specific strategies for achieving these features. This work demonstrates that optimally chosen computational strategies do enhance the usefulness of an exergy-based analysis program as an engineering tool for evaluating the thermal performance of a data center."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "IFC - ",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00210-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208002103",
key = "tagkey2008IFC"
}
@article{Vitezslav2008849,
title = "Power semiconductor devices and integrated circuits",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "849 - 850",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003515",
author = "Vitezslav and Benda"
}
@article{Papež2008851,
title = "Reliability of reverse properties of power semiconductor devices:: Influence of surface dielectric layer and its experimental verification",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "851 - 856",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003527",
author = "V. Papež and B. Kojecký and D. Šámal",
keywords = "Power semiconductor devices",
keywords = "Reliability",
keywords = "Time instability",
keywords = "Endurance tests",
abstract = "Reliability of reverse properties of power semiconductor devices is an important condition for their practical application. Usual standard tests do not reveal total information concerning the technological genetic aspects of devices production. These aspects can be linked with individual technological operations, most frequently with preparation of semiconductor surface and its protection by dielectric layers. Properties of dielectric layers influence the time stability of reverse currents by means of a change of dielectric permittivity. This article analyses some physical causes of the time-instable behaviour of devices and also presents a special method and equipment for reliable tests."
}
@article{Milady2008857,
title = "Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "857 - 867",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003539",
author = "S. Milady and D. Silber and F.-J. Niedernostheide and H.P. Felsl",
keywords = "Power diode",
keywords = "Safe operating area",
keywords = "Current filaments",
keywords = "Thermal boundary conditions",
keywords = "Reverse recovery",
keywords = "Filament velocity",
abstract = "The influence of small doping inhomogeneities on the behavior of current filaments appearing in p+–n−–n+ diodes during the reverse-recovery period under extreme turn-off conditions is investigated. It is shown that depending on the strength and the distance between the inhomogeneities, different types of filament dynamics may appear, resulting in irregular or regular hopping or a continuously traveling filament. The hopping filament dynamics is essentially controlled by the long-range inhibitory effect of local plasma extraction, while the traveling filament is dominated by the mutual interaction of charge carrier generation and plasma extraction in the region between two neighboring inhomogeneities. Electrothermal simulations have shown that local heating induced by a traveling filament may result in the generation of a non-moving thermal-induced filament which can lead to destructive thermal runaway. The onset of thermal runaway is extremely sensitive to the thermal resistance of the contacts."
}
@article{Heinze2008868,
title = "Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "868 - 877",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003540",
author = "B. Heinze and J. Lutz and H.P. Felsl and H.-J. Schulze",
keywords = "Free-wheeling diodes",
keywords = "Buffer structures",
keywords = "Edge termination",
keywords = "Filamentation",
keywords = "Dynamic avalanche",
keywords = "Device simulation",
abstract = "Buffer structures and edge termination have a decisive influence on the static and dynamic characteristics of free-wheeling diodes. In this paper the influence of buffer structures at the cathode side, the influence of the design of the edge termination and of a resistive zone at the anode side are analysed with respect to the ruggedness of free-wheeling diodes. Therefore, we investigated the device behaviour by means of numerical device simulation concerning the formation of current filamentation and the correlated shape of the electrical field distribution. The considered edge termination of the diodes was planar junction termination extensions and a beveled edge. Various buffer structures, a Gaussian buffer and a buried n-doped layer of increased doping called epitaxy level buffer are compared with a reference diode without any buffer structure."
}
@article{Vobecký2008878,
title = "Dynamic avalanche in diodes with local lifetime control by means of palladium",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "878 - 883",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003552",
author = "J. Vobecký and P. Hazdra",
keywords = "Silicon",
keywords = "Power diode",
keywords = "Dynamic avalanche",
keywords = "Avalanche breakdown",
abstract = "The increase of the static breakdown voltage and the reduction of dynamic avalanche in a fast recovery 2.5 kV/150 A P-i-N diode subjected to the radiation enhanced diffusion of a palladium are discussed. The in-diffusing palladium compensates the doping profile in a lightly doped N-base close to the anode junction. Using a device simulation, the increase of the breakdown voltage and the reduction of the dynamic avalanche are explained by the reduction of peak electric field in the additional low-doped P-type layer created by the compensation effect. This is presented for both a dc and transient device operation and confirmed experimentally as well. An improved technology curve for the static versus recovery losses at a high line voltage has been obtained. A high thermal budget of deep levels and a low leakage current are additional benefits of the method."
}
@article{Kozisek2008884,
title = "Monitoring of carrier lifetime distribution in high power semiconductor device technology",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "884 - 889",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003564",
author = "J. Kozisek and Z. Machacek and V. Benda",
keywords = "Carrier lifetime",
keywords = "Homogeneity",
keywords = "Diagnostics",
keywords = "LBIC method",
keywords = "Power semiconductor devices",
abstract = "Non-uniform distribution of carrier lifetime over the area of power bipolar semiconductor devices results in a non-uniform distribution of on-state current density and switching loses. Consequently, it results in non-uniform temperature distribution which can negatively influence the device reliability. Several methods can be used for measuring carrier lifetime distribution both in starting single crystal material and in device structures after high-temperature processes. Advantages and disadvantages of individual methods and an optimum area of applications are discussed in this paper. This paper is mostly oriented on a possibility to use LBIC method for measuring carrier lifetime distribution in the bulk of high voltage large-area devices, especially N+NPP+ diode structures."
}
@article{Enea2008890,
title = "Theoretical study about the RBSOA of a monolithic ESBT® (emitter-switched bipolar transistor) versus the saturation level before the switching-off",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "890 - 898",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003576",
author = "V. Enea and D. Kroell and M. Messina and C. Ronsisvalle",
keywords = "ESBT",
keywords = "Bipolar transistor",
keywords = "Power actuator",
keywords = "BJT RBSOA",
abstract = "One of the main strength points of the new power actuator emitter-switched bipolar transistor (ESBT®) is its excellent safe operating area: as a matter of fact the emitter-switching concept enables the driving of the bipolar transistor in a much safer way compared to the traditional base-switching one. Nevertheless, at very high current density, well above the working ones, its ruggedness decreases a little when the saturation level, just before the turn-off, is extremely low or extremely high. This paper explains that in these conditions the device switches off not exactly in emitter-switching conditions or it is not properly sized."
}
@article{Shammas2008899,
title = "Optimisation of the number of IGBT devices in a series–parallel string",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "899 - 907",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003588",
author = "Noel Y.A. Shammas and Ruchira Withanage and Dinesh Chamund",
keywords = "IGBT",
keywords = "Series and parallel connection",
keywords = "Derating",
abstract = "High-power semiconductor switches can be realised by connecting existing devices in series and parallel. The number of devices in series depends on the operating voltage of an application and the individual device voltage rating. For a given application, the use of higher voltage rated IGBTs leads to a fewer number of devices and vice versa. The total power loss of the series string equals to the sum of individual IGBT power losses and total loss increases with the increase in operating frequency. The level of increase in power loss depends on the device characteristics. For high current operation, the minimum number of devices depends on the current rating of individual device. In this paper, series IGBT string of six 1.2 kV, four 1.7 kV, two 3.3 kV and a single 6.5 kV IGBTs are simulated for a 4.5 kV/100 A application and power losses are analysed for different frequencies and duty cycles. This power loss analysis is extended for commercial IGBTs to compare the simulation results. The number of devices for minimum power loss depends on operating frequencies and power savings are significant both at low and high frequencies. In addition to the power losses, the other important issues in optimising the number of IGBTs are described in this paper. When IGBT modules are connected in parallel the principle of derating is applied to obtained reliable operation. This is explained with some examples."
}
@article{Ji2008908,
title = "A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "908 - 913",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.018",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700359X",
author = "In-Hwan Ji and Min-Woo Ha and Young-Hwan Choi and Seung-Chul Lee and Chong-Man Yun and Min-Koo Han",
keywords = "Floating p-well",
keywords = "Current sensing",
keywords = "Fault protection",
abstract = "A new fault current-sensing scheme employing the floating p-well for fast protection of the insulated gate bipolar transistor (IGBT) from the short-circuit faults is proposed and verified by employing 2D mixed mode simulation, based on the previous experimental results. The proposed floating p-well current-sensing scheme detects not the normal operating current but the fault current of the main IGBT by using the diode connected MOSFET and a resistor, when the short-circuit fault occurs. The diode-connected MOSFET eliminates the degradation of the forward voltage drop, because the floating p-well current does not flow under the normal operating condition due to the threshold voltage of the diode connected MOSFET. The proposed current sensor increases the protection speed without any additional delay time by the external blanking filter."
}
@article{Théolier2008914,
title = "Switching performance of 65 V vertical N-channel FLYMOSFETs",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "914 - 921",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003606",
author = "L. Théolier and K. Isoird and H. Tranduc and F. Morancho and J. Roig and Y. Weber and E.N. Stefanov and J.-M. Reynès",
keywords = "Power MOSFETs",
keywords = "Floating island",
keywords = "Capacitance modeling",
keywords = "Gate charge",
keywords = "VDMOSFET",
keywords = "FLYMOSFET",
abstract = "In this paper, the switching performance of 65 V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capacitances and the gate charge of the two devices are comparable. A 2D simulation study of two equivalent structures (i.e. FLYMOSFET and VDMOSFET exhibiting the same breakdown voltage) confirms that floating islands did not cause parasitic or new phenomenon, in the case of weakly doped islands."
}
@article{Cortés2008922,
title = "Superjunction LDMOS on thick-SOI technology for RF applications",
journal = "Microelectronics Journal",
volume = "39",
number = "6",
pages = "922 - 927",
year = "2008",
note = "8th International Seminar on Power Semiconductors (ISPS '06)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003618",
author = "I. Cortés and P. Fernández-Martínez and D. Flores and S. Hidalgo and J. Rebollo",
keywords = "Superjunction",
keywords = "LDMOS",
keywords = "RF",
keywords = "Thick-SOI",
abstract = "The feasibility of applying the superjunction (SJ) concept to a thick-SOI LDMOS transistor for RF base station applications is studied in this paper. The electrical performances of SJ thick-SOI LDMOS transistors are compared with those of the conventional RF LDMOS counterparts through an extensive 3D simulation work in terms of transconductance (gm), specific-on resistance (RON), voltage capability (VBR) and C–V characteristics. It is expected that SJ thick-SOI LDMOS structures will exhibit a significant RON reduction thanks to the N-doping concentration increment in the drift region. The charge balance in structures integrated on thick-SOI substrates with a P-type epitaxial layer requires a fit of the N and P pillar doping concentration, being the P pillar slightly lower doped than the N one. Variation of pillars doping concentrations is directly related to the device performance. Therefore, the RON/VBR trade-off and the RON components and the Cgd evolution are shown as a function of pillar doping ratio."
}
@article{tagkey2008IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "IFC - ",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00195-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920800195X",
key = "tagkey2008IFC"
}
@article{Pifferi2008703,
title = "A broadband RF 65 nm CMOS front-end for cable TV reception",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "703 - 710",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.027",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000025",
author = "Marco Pifferi and Fabio Ducati and Hans Brekelmans and Lorenzo Tripodi and Kostas Doris and Mattia Borgarino",
keywords = "TV tuner",
keywords = "Broadband",
keywords = "Composite distortion",
keywords = "Feedback",
keywords = "DOCSIS",
abstract = "A novel broadband RF front-end in 65 nm CMOS technology is presented. The front-end serves to precondition the incoming RF spectrum for further processing in a cable TV receiver architecture where RF channel selection and down conversion are done in digital domain. The analog front-end consists of a broadband highly linear low-noise amplifier followed by a variable gain RF amplifier. An original broadband circuit topology for the amplifiers is adopted.
The fabricated front-end exhibits a bandwidth of 50–1050 MHz, a variable gain, which spans from 12 to 37 dB with a 0.2 dB step, an OIP3 of 28.4 dBm (77.5 dBmV), an OIP2 of 65 dBm (114 dBmV), and a noise figure of 5.8 dB, dissipating 125 mW at 1.2 V supply, and a core silicon area of 0.4 mm2."
}
@article{Sun2008711,
title = "Center embossed diaphragm design guidelines and Fabry–Perot diaphragm fiber optic sensor",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "711 - 716",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004132",
author = "Yan Sun and Ganhua Feng and George Georgiou and Edip Niver and Karen Noe and Ken Chin",
keywords = "Center embossed diaphragm",
keywords = "Fabry–Perot",
keywords = "Fiber optic",
keywords = "Acoustic sensor",
keywords = "MEMS",
abstract = "This research established the design guidelines for center embossed diaphragms for micro-diaphragm fiber type sensors. Following the guidelines, a center embossed diaphragm fiber optic sensor (CE-DFOS) based on Fabry–Perot interference was designed and fabricated with micro-electro-mechanical system (MEMS) technology. The CE-DFOS was experimentally verified to have the designed intrinsic frequency, and demonstrated high sensitivity in parallel testing with a piezoelectric (PZT) sensor."
}
@article{Byun2008717,
title = "Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "717 - 722",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004004",
author = "Insoo Byun and Jooran Yang and Sekwang Park",
keywords = "MEMS (micro electro mechanical system)",
keywords = "BOEM (buffered oxide etchant method)",
keywords = "ECDM (electro chemical discharge method)",
keywords = "UVAM (UV sensitive adhesives method)",
keywords = "DNA (deoxyribo nucleic acid)",
abstract = "This experiment was required the base technology's of micro packaging technology, micro fluidic technology, micro optical technology and electricity signal processing technology. This experiment emphasizes Bio-MEMS (micro electro mechanical system) technology and application. Material of chip was used the hydrophilic properties of good glass more than that of PDMS (poly dimethylsiloxane) and PMMA (poly methyl methacrylate). Method to use in chip manufacture is the BOEM (buffered oxide etchant method), ECDM (electro chemical discharge method) and UVAM (UV sensitive adhesives method). It is possible to measure the characteristics of various DNA. Therefore, those applications may be useful in other MEMS technology and optical science of biotechnology field [H.M. Shapiro, M.D, Practical Flow Cytometry, third ed., 1995; Z.D. kiewicz, J.P. Robinson, H.A. Crissman, Flow Cytometry, second ed., 1995]."
}
@article{Meng2008723,
title = "Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "723 - 726",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004090",
author = "Yanlong Meng and Wenfa Xie and Ning Zhang and Shufen Chen and Jiang Li and Wei Hu and Yi Zhao and Jingying Hou and Shiyong Liu",
keywords = "ITEOLEDs",
keywords = "MoOx",
keywords = "Hole-injection",
abstract = "Non-doped inverted top-emitting organic light-emitting diode with high efficiency is demonstrated through employing an effective hole-injection layer composed of MoOx. One reason for high efficiency lies on the energy-level matching between MoOx and hole-transport, and another is due to the Ohmic contact formed between MoOx and Ag. Both of them lead to an improvement of the hole-injection capability from Ag top anode. Moreover, the symmetrical current of “hole-only” device with MoOx shows better hole-injection capability, which is independent of the deposition sequence. The optimized device with MoOx hole-injection layer exhibits maximum current efficiency of 3.7 cd/A at a raised luminance level of 14,900 cd/m2 and a maximum luminance of 47,000 cd/m2 under 18 V."
}
@article{Sutikno2008727,
title = "A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "727 - 731",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004120",
author = "M. Sutikno and U. Hashim and Z.A.Z. Jamal",
keywords = "Pattern-dependent oxidation",
keywords = "Rapid thermal processing",
keywords = "Quantum dot",
keywords = "Reconstruction method",
abstract = "The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, high contrast surface and high smoothness surface were used to optimize the etch process. Si nanostructures oxidation using either oxidation furnace or rapid thermal processing (RTP) equipment can result in silicon dioxide (SiO2)-embedded-Si. In this research, we compare the furnace-oxidized-Si nanostructures with the RTP-oxidized-Si nanostructures. The oxidation rate of Si nanostructures using a furnace is 0.36 nm/s, while the oxidation rate of Si nanostructures using RTP is 2.16 nm/s."
}
@article{Yannakopoulos2008732,
title = "Influence of ionizing radiation in electronic and optoelectronic properties of III–V semiconductor compounds",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "732 - 736",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.025",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700403X",
author = "P.H. Yannakopoulos and A.P. Skountzos and M. Vesely",
keywords = "SRIM-TRIM",
keywords = "FET",
keywords = "Semiconductors",
keywords = "Optoelectronic properties",
keywords = "Radiation",
keywords = "Simulation",
abstract = "The interaction between radiation and matter is very important in the study of materials used in the aerospace industry. The improvement of the resistance of various devices is crucial. In the present work we have produced simulation results of damages induced in electronic devices of III–V semiconductor compounds, using SRIM-TRIM, CASINO and GEANT4 programs. The energies used for α+ particles, SRIM-TRIM, were from 500 keV to 4 MeV for both FETs and HEMTs and the energies used for β− particles, CASINO, were from 1 to 500 keV."
}
@article{Zardas2008737,
title = "A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "737 - 739",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004028",
author = "G.E. Zardas and P.H. Yannakopoulos and Chrys I. Symeonides and M. Vesely and P.C. Euthymiou",
keywords = "Semiconductors",
keywords = "Photoconductivity",
keywords = "Semiinsulating",
keywords = "GaAs",
keywords = "Recombination and trapping",
abstract = "The aim of the present work is to study the density of electron transitions inside the energy gap of SI-GaAs at various temperatures and under α-particle irradiation at 300 K. The photocurrent as a function of photon energy from 1.35 to 1.80 eV, for each temperature, was measured in the temperature range from 180 to 300 K. From the spectra analysis for each temperature, three peaks were found. The energy that corresponds to the peaks as a function of temperature was plotted. The temperature and the irradiation strongly affect the value of the peaks, which is related to the number of transitions of the electrons inside the energy gap. As the temperature decreases, the peaks follow the same change. After irradiation, the values of the peaks decrease for all temperatures and this decrease is more intense for the P3 peak."
}
@article{Diaz2008740,
title = "Excitation of hypersound in n-GaN films",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "740 - 743",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004107",
author = "F. Diaz and V. Grimalsky and M. Tecpoyotl and J. Escobedo and S. Koshevaya",
keywords = "Excitation of hypersound",
keywords = "Space charge waves",
keywords = "Negative differential conductivity",
keywords = "Piezoeffect mechanism",
abstract = "The aim of this paper is the analysis of hypersound excitation in GaN films. Simulation of process is presented for a case of a thin film geometry on a non-piezoelectric substrate. The frequency range considered is from 50 GHz up to 200 GHz. The excitation is due to coupling with space charge waves (SCWs) in GaN film. The amplification of SCWs is related with negative differential conductivity in GaN films. Possible spatial increments are obtained. The amplified SCWs can excite hypersonic waves at the same frequency due to piezoeffect and deformation potential mechanisms. The first effect is stronger and causes an effective resonant excitation of hypersonic waves in the case of full mechanic contact of GaN film and non-piezoelectric substrate."
}
@article{Dai2008744,
title = "Micro FET pressure sensor manufactured using CMOS-MEMS technique",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "744 - 749",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004144",
author = "Ching-Liang Dai and Pin-Hsu Kao and Yao-Wei Tai and Chyan-Chyi Wu",
keywords = "FET pressure sensor",
keywords = "CMOS",
keywords = "MEMS",
abstract = "The fabrication of a micro field effect transistor (FET) pressure sensor using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process has been investigated. The pressure sensor is composed of 16 sensing cells in parallel, and each sensing cell includes a suspended membrane and an NMOS. The suspended membrane is the movable gate of the NMOS. The pressure sensor needs a post-process to obtain the suspended membrane after the CMOS process. The post-process employs etchants to etch the sacrificial layers to release the suspended membrane, and then a low-pressure chemical vapor deposition (LPCVD) parylene is used to seal the etching holes in the pressure sensor. The pressure sensor produces a change in current when applying a pressure to the sensing cells. Experimental results show that the pressure sensor has a sensitivity of 0.022 μA/kPa in the pressure range of 0–500 kPa."
}
@article{Jinghong2008750,
title = "A circuit-compatible analytical device model for ballistic nanowire transistors",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "750 - 755",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004193",
author = "Jinghong and Chen",
keywords = "Quantum ballistic transport",
keywords = "Semiconductor nanowire transistor",
keywords = "Circuit-compatible modeling",
abstract = "Silicon nanowire transistors (SNWTs) have attracted broad attention as a promising device structure for future integrated circuits. Silicon nanowires with a diameter as small as 2 nm and having high carrier mobility have been achieved. Consequently, to develop TCAD tools for SNWT design and to model SNWT for circuit-level simulations have become increasingly important. This paper presents a circuit-compatible closed-form analytical model for ballistic SNWTs. Both the current–voltage (I–V) and capacitance–voltage (C–V) characteristics are modeled in terms of device parameters and terminal voltages. Such a model can be efficiently used in a conventional circuit simulator like SPICE to facilitate transistor-level simulation of large-scale nanowire or mixed nanowire-CMOS circuits and systems."
}
@article{Shavezipur2008756,
title = "A novel linearly tunable butterfly-shape MEMS capacitor",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "756 - 762",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.026",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004041",
author = "M. Shavezipur and A. Khajepour and S.M. Hashemi",
keywords = "Linear capacitors",
keywords = "Nonlinear spring",
keywords = "MEMS capacitors",
keywords = "Segmented electrodes",
keywords = "Structural flexibility",
abstract = "A new MEMS tunable capacitor with linear capacitance–voltage (C–V) response is introduced. The design is developed based on a parallel-plate configuration and uses the structural lumped flexibility and geometry optimization to obtain a linear response. The moving electrode is divided into two segments connected to one another by a torsional spring. There are extra beams located between the two plates, which constrain the displacement of the moving plate. The resulting nonlinear structural rigidity provides the design with higher tunability than the parallel-plate ones. Furthermore, because the plate's displacement is controlled, the shape of C–V curve changes in such a way that high linearity is achieved. The proposed design can be fabricated by a three-structural-layer process such as PolyMUMPs. The results of analytical solution and experimental measurements verify that the new capacitor can produce tunability of over 100% with high linearity. The introduced design methodology can further be extended to flexible plates and beams to obtain smooth C–V curves."
}
@article{Jiang2008763,
title = "Study on the vacuum breakdown in field emission of a nest array of multi-walled carbon nanotube/silicon nanoporous pillar array",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "763 - 767",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004156",
author = "Wei Fen Jiang and Long Yu Li and Shun Hua Xiao and Yong Fen Dong and Xin Jian Li",
keywords = "A nest array of multi-walled carbon nanotube",
keywords = "Silicon nanoporous pillar array",
keywords = "Field emission",
keywords = "Vacuum breakdown",
abstract = "A composite structure, a nest array of multi-walled carbon nanotubes/silicon nanoporous pillar array (NACNT/Si-NPA), with good field emission properties, was synthesized through growing CNT on Si-NPA by thermal chemical vapor deposition. In order to make full use of its good field emission properties, the vacuum breakdown behavior accompanied with field emission from NACNT/Si-NPA was investigated. The results revealed that a positive feedback of field emission and resulted Joule heat ignited a small portion of protruding emitters, which caused spark discharge, destroyed the anode and generated a large amount of heat. The thermal runaway ultimately resulted in the destruction of substrate and vacuum breakdown."
}
@article{Dima2008768,
title = "Silicon nano-particles in SiO2 sol–gel film for nano-crystal memory device applications",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "768 - 770",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004168",
author = "A. Dima and F.G. Della Corte and C.J. Williams and K.G. Watkins and G. Dearden and N. O’Hare and M. Casalino and I. Rendina and M. Dima",
keywords = "Memory devices",
keywords = "Sol–gel",
keywords = "Nano-silicon",
keywords = "Thin films",
abstract = "A novel 2-bit nano-silicon based non-volatile memory is proposed to double memory density. The thin film structure exhibits two conduction states (ON and OFF) at different voltages and has a cost-effective structure. The structure utilizes the good electrical properties of fluorinated SiO2 thin films, together with the bi-stable properties conferred by the nano-silicon particles therein embedded. A polymeric layer of 8-hydroxyquinoline aluminum salt (Alq3) further deposited on the top of the nano-particle layer through chemical evaporation and a silver paste contact determines the final structure. The positive 0–15 V scan reveals two discontinuities with an ON/OFF ratio of 104–105 (2–4 V) and OFF/ON of 103 (12.5–13.0 V). The reverse scan displays again two distinct thresholds, range of 10.5–11.0 V (ON/OFF ratio 10−3), respectively, 0.5 V (OFF/ON ratio 10−5–10−4)."
}
@article{Jijun2008771,
title = "Piezoresistive effect in GaAs/InxGa1−xAs/AlAs resonant tunneling diodes for application in micromechanical sensors",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "771 - 776",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004053",
author = "Xiong Jijun and Wang Jian and Zhang Wendong and Xue Chenyang and Zhang Binzhen and Hu Jie",
keywords = "Piezoresistive effect",
keywords = "RTD",
keywords = "Micromechanical sensors",
abstract = "The current–voltage characteristics of GaAs/InxGa1−xAs/AlAs resonant tunneling diodes (RTDs) are a function of stress, and the current–voltage changes of RTDs with stress are attributed to the piezoresistive effect in RTDs. In order to study the piezoresistive effect in RTDs for application in micromachined mechanical sensors, the beam-mass structure based on RTDs is designed, fabricated and tested by the Wheatstone bridge test circuit. The test results show that the piezoresistive sensitivity of RTDs can be adjusted through the bias voltage, and the maximal piezoresistive sensitivity of RTDs with bias voltage at 0.618 V is 7.61×10−11 Pa−1, which is two orders higher than the minimal piezoresistive sensitivity (2.03×10−13 Pa−1) of RTDs with bias voltage at 0.656 V, and is also higher than the piezoresistive sensitivity of silicon material (5.52×10−11 Pa−1)."
}
@article{Guo2008777,
title = "The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "777 - 781",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004065",
author = "Lunchun Guo and Xiaoliang Wang and Cuimei Wang and Hongling Xiao and Junxue Ran and Weijun Luo and Xiaoyan Wang and Baozhu Wang and Cebao Fang and Guoxin Hu",
keywords = "GaN",
keywords = "HEMT",
keywords = "2DEG",
keywords = "Mobility",
keywords = "Polarization",
abstract = "The sheet carrier concentrations, conduction band profiles and amount of free carriers in the barriers have been determined by solving coupled Schrödinger and Poisson equation self-consistently for coherently grown Al0.3Ga0.7N/GaN and Al0.3Ga0.7N/AlN/GaN structures on thick GaN. The Al0.3Ga0.7N/GaN heterojunction structures with and without 1 nm AlN interlayer have been grown by MOCVD on sapphire substrate, the physical properties for these two structures have been investigated by various instruments such as Hall measurement and X-ray diffraction. By comparison of the theoretical and experimental results, we demonstrate that the sheet carrier concentration and the electrons mobility would be improved by the introduction of an AlN interlayer for Al0.3Ga0.7N/GaN structure. Mechanisms for the increasing of the sheet carrier concentration and the electrons mobility will be discussed in this paper."
}
@article{Lu2008782,
title = "Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "782 - 785",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003989",
author = "Wenhui Lu and Hang Song and Yixin Jin and Haifeng Zhao and Zhiming Li and Hong Jiang and Guoqing Miao",
keywords = "Carbon nanotubes",
keywords = "Field emission",
keywords = "Ag micro-particle intermediation layer",
abstract = "An efficient way to improve field emission characteristic of carbon nanotubes (CNTs) through an Ag micro-particle intermediation layer is presented. In this way, the intermediation layer is deposited on an indium tin oxide glass substrate by electrochemical method and then the CNTs are covered onto surface of the intermediation layer by electrophoretic method as CNT field emitters. The field emission characteristic of the CNT field emitters with the intermediation layer is significantly improved compared to the one without the intermediation layer, including decreased turn-on electric field from 4.2 to 3.1 V/μm and increased emission current density from 0.224 to 0.912 mA/cm2 at an applied electric field of 6 V/μm. The improved field emission characteristic may be attributed to gibbous surface of the CNT field emitters. This efficient way is much simple, low cost, and suitable for production of large scale CNTs–based field emission cold cathode."
}
@article{Wei2008786,
title = "Stark effect of electrons in semiconducting rectangular quantum boxes",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "786 - 791",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.012",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700417X",
author = "Guozhu Wei and Sheng Wang and Guangyu Yi",
keywords = "Quantum boxes",
keywords = "Stark effect",
abstract = "The Stark shift of the electronic energy levels in semiconducting rectangular quantum boxes with different sizes is investigated by the use of variational solutions to the effective-mass approximation for electric fields of various orientations with respect to the center axis of the box. The asymptotic expansions of the Stark shift are given in the limits of low and high fields, respectively; they clearly indicate that the Stark shift is a quadratic function of the electric field for low electric fields and is an approximate linear function of the electric field for high electric fields. Likewise, our results also show that the largest Stark shift is obtained for the field directed along the diagonal in a cubic box, and is found for the low field directed along a side of the box and for the high field along the diagonal in a rectangular one. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination."
}
@article{Youssef2008792,
title = "Preliminary study on pyroelectric lithium tantalite by a novel electrostatic spray pyrolysis technique",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "792 - 796",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004016",
author = "S. Youssef and R. Al Asmar and J. Podlecki and M. Abdallah and D. Zaouk and A. Foucaran",
keywords = "LiTaO3",
keywords = "Pyrolysis",
keywords = "X-ray diffraction",
keywords = "Stresses",
keywords = "Characterization",
abstract = "In this paper, we report the first results obtained for pyroelectric LiTaO3 thin films prepared on silicon substrates by electrostatic spray pyrolysis (ESP), a simple, low cost and efficient technique not widely used for LiTaO3 deposition, using lithium acetylacetonate and tantalum ethoxide in a mixture of methanol. The effect of the growth and annealing temperature on the structural and optical properties has been investigated. X-ray diffraction measurements have shown that LiTaO3 thin films became preferentially oriented in the (0,1,2) plane after annealing treatment in an oxygen environment using the rapid thermal processing. On the other hand, a thermal stress's modeling is performed to observe the effect of growth temperature on the as-deposited films and the substrates. The SEM images have shown that the film heat-treated at 600 °C became more homogeneous and smoother than that before annealing. The optical phonon modes of the LiTaO3 thin films have been also investigated using infrared reflectivity (FTIR) and Raman spectroscopy."
}
@article{KhizarulHaq|Khan2008797,
title = "Interaction of α radiation with iron-doped n-type silicon",
journal = "Microelectronics Journal",
volume = "39",
number = "5",
pages = "797 - 801",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004089",
author = "Khizar-ul-Haq and M.A. Khan and U.S. Qurashi and Abdul Majid",
keywords = "Deep-levels transient spectroscopy",
keywords = "Deep-level defects",
keywords = "α-Radiation",
keywords = "Defects concentration",
abstract = "Deep-level transient spectroscopy (DLTS) measurements were carried out on low-doped n-silicon before and after irradiation with 5.48 MeV α particles at room temperature with a fluence of ∼1010 α particles/cm2. The DLTS measurements on the samples identified three electron levels E1, E2 and E3 before irradiation. The deep-levels characteristic studies include emission rate signatures, activation energies, defect concentrations and capture cross sections. It was found that all pre-existing defects decreased their amplitudes during irradiation. The decrease in activation energy of level E3 and noticeable suppression of level E1 was also observed after irradiation. It was clearly seen that the composite peak E3 (combination of E2 and E3) was successfully resolved after irradiating with α particles. α-irradiation is seen to lead a significant suppression of the iron interstitial defect, and without causing any change in its room temperature annealing characteristics."
}
@article{tagkey2008IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "IFC - ",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00138-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208001389",
key = "tagkey2008IFC"
}
@article{Henini2008301,
title = "Preface",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "301 - ",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001395",
author = "Mohamed Henini and Isaac Hernández-Calderón"
}
@article{Geller2008302,
title = "Nanostructures for nanoelectronics: No potential for room temperature applications?",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "302 - 306",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.097",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001401",
author = "M. Geller and F. Hopfer and D. Bimberg",
keywords = "Quantum dots",
keywords = "Memory device",
keywords = "VCSELs",
abstract = "A novel type of memory based on self-organized quantum dots (QDs) is proposed in the first part of this article. The future QD-Flash will merge the advantages of the classical dynamic random access memory (DRAM) and the Flash to a non-volatile memory with fast access times ( < 10 ns ) and good endurance ( > 10 15 write/erase cycles). In a first step towards a QD-Flash, we demonstrate here a hole retention time of 1.6 s at room temperature in InAs/GaAs QDs with an additional Al 0.9 Ga 0.1 As barrier. This value is already more than three orders of magnitude longer than the refresh time in a DRAM memory. A retention time of more than 10 years is predicted for (InGa)Sb QDs in an AlAs matrix.
In the second part, we demonstrate vertical-cavity surface-emitting lasers based on the submonolayer deposition growth mode of InAs, operating error free at 20 Gbit/s between 25 and 85 ∘ C with a bit-error-rate below 10 - 12 . Their peak differential efficiency decreases only from 0.7 W/A at 25 ∘ C to 0.6 W/A at 85 ∘ C ."
}
@article{Rupani2008307,
title = "Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "307 - 313",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.108",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001413",
author = "R.A. Rupani and S. Ghosh and X. Su and P. Bhattacharya",
keywords = "1/f noise",
keywords = "Quantum dots",
keywords = "Infrared detectors",
keywords = "Resonant tunneling",
abstract = "We have studied the temperature dependence of low-frequency noise in InAs–GaAs resonant tunneling quantum dot infrared photodetectors (T-QDIPs). The noise in these devices has been investigated in the temperature range of 78–300 K. The noise spectrum showed a weak Lorentzian component superimposed upon the 1/fγ spectrum. The change in the cut-off frequency of the Lorentzian was analyzed as a function of temperature. The activation energy of the trap associated with this Lorentzian was obtained as 0.155 eV, which is in good agreement with the energy of the lowest energy state in the quantum dot."
}
@article{Chorley2008314,
title = "Single electron transport in a free-standing quantum dot",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "314 - 317",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001425",
author = "S.J. Chorley and C.G. Smith and F. Perez-Martinez and J. Prance and P. Atkinson and D.A. Ritchie and G.A.C. Jones",
keywords = "Quantum dot",
keywords = "Nanostructure",
keywords = "Heterostructure",
keywords = "Coulomb blockade",
keywords = "Phonon",
abstract = "We have fabricated a single quantum dot in the two-dimensional electron gas of a free-standing GaAs/AlGaAs heterostructure. Standard processing techniques are used to define the dot on a narrow mesa and selective etching undercuts the device to form a 120 nm thick free-standing beam connected to the substrate by source and drain regions. Work by Weig et al. [Phys. Rev. Lett. 92(4) (2004) 046804] on similar devices has provided evidence for phonon blockade which suppresses conduction at low temperatures and bias. Further studies are presented here that can only partially be explained by this theory. A similar gap in conductance has been seen, but evolution of the structure in a magnetic field suggests an alternative explanation of multiple dots in series, may better explain the results."
}
@article{Korkusinski2008318,
title = "Building semiconductor nanostructures atom by atom",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "318 - 326",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001437",
author = "M. Korkusinski and P. Hawrylak and M. Zielinski and W. Sheng and G. Klimeck",
keywords = "Atomistic calculations",
keywords = "Tight-binding model",
keywords = "Artificial molecule",
abstract = "We present an atomistic tight-binding approach to calculating the electronic structure of semiconductor nanostructures. We start by deriving the strain distribution in the structure using the valence force field model. The strain field is incorporated into the tight-binding electronic structure calculation carried out in the frame of the effective bond orbital model and the fully atomistic sp 3 d 5 s * approach. We apply the method to a vertically coupled self-assembled double-dot molecule. Using the effective mass approach, we establish the existence of electronic bonding and antibonding molecular orbitals for electrons and holes, whose probability density is shared equally between the dots. In the atomistic calculation we recover the molecular character of electron orbitals, but find that structural and atomistic details of the sample modify the hole orbitals, leading to a strongly asymmetric distribution of the probability density between the dots."
}
@article{Kobayashi2008327,
title = "Highly circular-polarized single photon generation from a single quantum dot at zero magnetic field",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "327 - 330",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.098",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001474",
author = "H. Kobayashi and H. Kumano and M. Endo and M. Jo and I. Suemune and H. Sasakura and S. Adachi and S. Muto",
keywords = "Single quantum dot",
keywords = "Single photon",
keywords = "Charged exciton",
keywords = "Circular polarization",
keywords = "Spin flip",
abstract = "Origin of sharp photoluminescence lines observed from an InAlAs quantum dot was identified with the measurements of excitation-power dependences and polarization correlations, together with photon correlation measurements. Single photon emission with high degree of circular polarization (DCP) up to 60% was observed from a positively charged exciton (trion) state in the single quantum dot under non-resonant excitation at zero magnetic field."
}
@article{Holtz2008331,
title = "Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "331 - 334",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001449",
author = "P.O. Holtz and E.S. Moskalenko and M. Larsson and K.F. Karlsson and W.V. Schoenfeld and P.M. Petroff",
keywords = "Quantum dot",
keywords = "Micro-luminescence",
keywords = "Exciton",
abstract = "A low-temperature micro-photoluminescence (μ-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The internal field in the vicinity of the dots could be altered by means of an additional infra-red laser. We propose a model, which is based on an essentially faster lateral transport of the charge carriers achieved in an external electric field. Consequently, also the capture probability into the dots and subsequently the dot luminescence is also enhanced. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment."
}
@article{R2008335,
title = "Revisiting tunneling via Si-quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "335 - 343",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001450",
author = "R. and Tsu",
keywords = "Si-quantum dots",
keywords = "Tunneling",
keywords = "Conductance",
abstract = "There is a significant increase in interaction when the individual quantum dot (QD) states are occupied consistent with Pauli's exclusion principle. Coupling of these QDs form a two-dimensional (2D)-like system and gives rise to steps in conductance. This important many-body effect, which explains why conductance steps are usually led by conductance peaks, was recognized only recently after LaFave and I solved the problem of the discrete nature of electrons on the capacitance of a dielectric sphere, a problem so similar to the QD. I think the spreading into a 2D system applies even to quantum wells (QWs), particularly when the number of electrons involved is drastically reduced when local inhomogeneity from traps enter the picture. Technologically, Nicollian and I spent 6 years and failed to create a nanoquantum device having a wide usage. In fact, most ‘miracles’ in modern technology such as the traveling wave tube, the MOSFET, the CCD, etc. are so special, almost as rare as winning a lottery."
}
@article{Suemune2008344,
title = "Role of Cooper pairs for the generation of entangled photon pairs from single quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "344 - 347",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001462",
author = "I. Suemune and T. Akazaki and K. Tanaka and M. Jo and K. Uesugi and M. Endo and H. Kumano and E. Hanamura",
keywords = "Quantum dots",
keywords = "Superconductor",
keywords = "Entanglement",
keywords = "Photon pair",
keywords = "Cooper pair",
abstract = "Generation of entangled photon pairs from semiconductor quantum dots (QDs) is highly desirable for realizing practical solid-state photon sources for quantum information processing and quantum cryptography. However, the energy splitting of exciton states in QDs almost prevent the generation of entangled photon pairs. This paper discusses the new possibility with the injection of electron as well as hole Cooper pairs into QDs."
}
@article{Barticevic2008348,
title = "Magnetoexciton states and diamagnetic shifts in quantum dots/ultrathin quantum wells under growth-direction magnetic fields",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "348 - 350",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001486",
author = "Z. Barticevic and M. Pacheco and C.A. Duque and L.E. Oliveira",
keywords = "Magnetoexcitons",
keywords = "Quantum dots",
keywords = "Diamagnetic shifts",
abstract = "A theoretical study of the exciton diamagnetic shifts in GaAs – Ga 1 - x Al x As quantum dots (QDs) and ultrathin quantum wells (QWs), under growth-direction applied magnetic-fields, is performed. We work in the effective-mass approximation and take into account nonparabolicity effects for the effective masses of both the conduction and valence bands. Calculated results for the diamagnetic shifts of the m = 0 ground-state, m = - 1 and - 2 excited states of the heavy-hole exciton, within a simple “ QD + ultrathin QW” model heterostructure, are found in overall agreement with recent experimental measurements by Schildermans et al. (Phys. Rev. B 72 (2005) 115312) and Sidor et al. [Phys. Rev. B 73 (2006) 155334]."
}
@article{VA2008351,
title = "On way to ideal quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "351 - 353",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.041",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002017",
author = "V.A. and Elyukhin",
keywords = "Semiconductors",
keywords = "Isoelectronic impurities",
keywords = "Self-assembling",
abstract = "Temperature and concentration self-assembling conditions of tetrahedral 1Sb4Ga clusters in multi-valley zinc blende AlN:(Ga, Sb) in the ultra dilute Sb limit are represented. Tetrahedral clusters should occur as a result of the second-order transition. The final stage of self-assembling when all Sb atoms are in 1Sb4Ga clusters also has to be reached as a result of the second-order transition at finite temperatures."
}
@article{Franco2008354,
title = "Linear conductance through parallel coupled quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "354 - 358",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.061",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002340",
author = "R. Franco and J. Silva-Valencia and M.S. Figueira",
keywords = "Quantum dot",
keywords = "Kondo effect",
keywords = "Transport",
keywords = "X-boson",
keywords = "Fano resonance",
abstract = "We study the electronic transport through two parallel coupled quantum dots (QDs), employing the X-boson treatment for the single impurity Anderson model. We compute the linear conductance (LC) and transmission coefficient for different regimes of the system, as function of the QDs energy; our results show a suppression of the linear conductance at low temperatures; when the coupling between the QDs is significant, a drop in the transmission coefficient is evident, at the energy value of the side-coupled QD. We also obtain the temperature dependence of the LC, for different hybridizations between the QDs and the energy of one of them. Our results are consistent with those obtained by other theoretical treatments and recovers what is expected when the coupling between the QDs is weak."
}
@article{Mlinar2008359,
title = "Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "359 - 361",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.052",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700208X",
author = "V. Mlinar and F.M. Peeters",
keywords = "Quantum dots",
keywords = "Capping",
keywords = "High index surfaces",
keywords = "K.p theory",
abstract = "A three-dimensional k · p calculation including strain and piezoelectricity shows that for large [11k] grown QD, the presence of an (In,Ga)As capping layer leads to an increase of the optical transition energy, in contrast to the expected decrease. The transition energy continues to increase with the increase of In concentration in the capping layer up to a critical In concentration after which the transition energy starts to decrease. We investigated the influence of the dot composition on our conclusions and find it to be valid regardless of the dot composition."
}
@article{Bickel2008362,
title = "Etched quantum dots for all-optical and electro-optical switches",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "362 - 364",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.042",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001498",
author = "Nathan Bickel and Patrick LiKamWa",
keywords = "Quantum dots",
keywords = "Quantum boxes",
keywords = "All-optical",
keywords = "Deep etching",
keywords = "Nanofabrication",
abstract = "We present progress to date in the production of quantum dots etched from multiple quantum well structures for use in all-optical and electro-optical switches. Details of fabrication and comparisons to self-assembled quantum dot materials are described, and the direction of our continuing research is outlined."
}
@article{Blumenthal2008365,
title = "Electron pumping through quantum dots defined in parallel etched quantum wires",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "365 - 368",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2008.01.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000281",
author = "M.D. Blumenthal and B. Kaestner and L. Li and S. Giblin and T.J.B.M. Janssen and M. Pepper and D. Anderson and G. Jones and D.A. Ritchie",
keywords = "Electron transport",
keywords = "Electron pump",
keywords = "Single-electron transport",
keywords = "Quantum wires",
keywords = "Quantum dot",
keywords = "Electrical current standard",
abstract = "We present the first results on electron transport through a tuneable-barrier double quantum dot electron pump. This device could yield twice the current to a single-dot pump previously reported [M.D. Blumenthal, B. Kaestner, L. Li, S. Giblin, , T.J.B.M. Janssen, M. Pepper, D. Anderson, G. Jones, D.A. Ritchie, Gigahertz quantized charge pumping, Nat. Phys. 3 (2007) 343], at the same operating frequency. The two quantum wires forming the device were not sufficiently homogeneous for pumping to be observed through both dots simultaneously, but sufficient homogeneity should be attainable in future batches of devices."
}
@article{JongChang2008369,
title = "Miniband properties of superlattice quantum dot arrays fabricated by the edge-defined nanowires",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "369 - 374",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.084",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001528",
author = "Jong Chang and Yi",
keywords = "Quantum dot",
keywords = "Superlattice",
keywords = "Miniband",
keywords = "Edge-defined quantum wire",
keywords = "Finite-difference method",
abstract = "A new scheme to fabricate quantum dot arrays using the edge-defined nanowires is proposed. The three-dimensional quantum size effect due to the nanowire crossing was analyzed by using the finite-difference method taking into account the periodic nature of the superlattices. The quantum dot modes were graphically verified, and the miniband gap between quantum dot and quantum wire modes was quantitatively analyzed."
}
@article{Karel2008375,
title = "Non-delta-function electronic spectral densities in individual quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "375 - 377",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001504",
author = "Karel and Král",
keywords = "Quantum dots",
keywords = "Electron–phonon coupling",
keywords = "Luminescence",
abstract = "Using a simplified model approach we estimate the optical line shape of the transition lines observable in photoluminescence experiments on quantum dots. We use the theory based on the interaction of electrons with the longitudinal optical phonons only. This theory gives, in the self-consistent Born approximation, the lowest-energy excited state line shape in the form of a very narrow peak with a shoulder on the low-energy side. We turn the attention to a comparison with experiments which appear to support this theoretical conclusion. This agreement emphasizes the role of the electronic multiple scattering on optical phonons in quantum dots. It is demonstrated that the optical line shape can give an information about the quantum dot system."
}
@article{Mikhailov2008378,
title = "Vertically coupled quantum dots charged by exciton",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "378 - 382",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.046",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700153X",
author = "I.D. Mikhailov and L.F. García and J.H. Marín",
keywords = "Coupled quantum dots",
keywords = "Excitons",
keywords = "Charge distribution",
abstract = "By using the fractal dimension method we calculate the ground state wave function of the exciton trapped in a heterostructure consisting of two identical coaxial lens-shaped In(Al)As quantum dots (QDs), deposited on vertically separated wetting layers (WLs), made of the same material, and imbedded inside a matrix of Ga(Al)As in the presence of the external magnetic field. It is shown that the strong confinement in the growth direction provides a considerable tunnelling of the particles in the barrier region in such way that the tunnelling of the electron is more significant that one of the hole due to the difference between their effective masses. In consequence, the central region of two dots with a captured exciton is charged positively whereas the barrier region between them is charged negatively. We found that the charging the barrier region is strengthened under magnetic field applied along the crystal growth direction."
}
@article{PerezMerchancano2008383,
title = "Impurity states in a spherical GaAs–Ga AlAs quantum dots: Effects of hydrostatic pressure",
journal = "Microelectronics Journal",
volume = "39",
number = "3–4",
pages = "383 - 386",
year = "2008",
note = "The Sixth International Conference on Low Dimensional Structures and Devices LDSD'07",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001565",
author = "S.T. Perez-Merchancano and R. Franco and J. Silva-Valencia",
keywords = "Impurities",
keywords = "Quantum dots",
keywords = "Hydrostatic pressure",
keywords = "GaAs",
abstract = "We calculated the binding energies of shallow donors and acceptors in a spherical GaAs–Ga 1 - x Al x As quantum dot under isotropic hydrostatic pressure for both a finite and an infinitely high barrier. We use a variational approach within the effective mass approximation. The binding energy is computed as a function of hydrostatic pressure, the dot sizes and the impurity position. The results show that the impurity binding energy increases with the pressure for any position of the impurity. We have also found that the binding energy depends on the location of the impurity and the pressure effects are less pronounced for impurities on the edge."
}
@article{tagkey2008IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "IFC - ",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/S0026-2692(08)00011-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269208000116",
key = "tagkey2008IFC"
}
@article{Ionescu2008161,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "161 - 164",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001073",
author = "A.M. Ionescu and L. Diaz Olavarrieta"
}
@article{Takesue2008165,
title = "High-Tc superconductivity in entirely end-bonded multi-walled carbon nanotubes",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "165 - 170",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002369",
author = "I. Takesue and J. Haruyama and N. Kobayashi and S. Chiashi and S. Maruyama and T. Sugai and H. Shinohara",
keywords = "Carbon nanotubes",
keywords = "Superconductivity",
keywords = "End-bonding",
keywords = "Tomonaga–Luttinger liquid",
keywords = "One-dimension",
abstract = "We report that entirely end-bonded multi-walled carbon nanotubes (MWNTs) can exhibit superconductivity with a transition temperature (Tc) as high as 12 K, which is approximately 30 times greater than Tc reported for ropes of single-walled nanotubes. We find that the emergence of this superconductivity is highly sensitive to the junction structures of the Au electrode/MWNTs. This reveals that only MWNTs with optimal numbers of electrically activated shells, which are realized by end bonding, can allow superconductivity due to intershell effects."
}
@article{Mizuta2008171,
title = "Bottom-up approach to silicon nanoelectronics",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "171 - 176",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002448",
author = "Hiroshi Mizuta and Shunri Oda",
keywords = "Silicon",
keywords = "Quantum dot",
keywords = "Nanoelectronics",
abstract = "This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon-based nanoelectronics. We discuss fabrication technique, electronic properties, and device applications of silicon nanodots as a building block for various nanoscale silicon devices."
}
@article{KonstantinK2008177,
title = "CMOL: Second life for silicon?",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "177 - 183",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002436",
author = "Konstantin K. and Likharev",
keywords = "Nanoelectronics",
keywords = "Hybrid semiconductor/nanodevice circuits",
keywords = "Memory",
keywords = "FPGA-like logic",
keywords = "Mixed-signal circuits",
keywords = "Neuromorphic networks",
abstract = "This is a brief review of the recent work on the prospective hybrid CMOS/nanowire/nanodevice (“CMOL”) circuits including digital memories, reconfigurable Boolean-logic circuits, and mixed-signal neuromorphic networks. The basic idea of CMOL circuits is to combine the advantages of CMOS technology (including its flexibility and high fabrication yield) with the extremely high potential density of molecular-scale two-terminal nanodevices. Relatively large critical dimensions of CMOS components and the “bottom-up” approach to nanodevice fabrication may keep CMOL fabrication costs at affordable level. At the same time, the density of active devices in CMOL circuits may be as high as 1012 cm2 and that they may provide an unparalleled information processing performance, up to 1020 operations per cm2 per second, at manageable power consumption."
}
@article{Dennler2008184,
title = "Towards atomic-scale design: A theoretical investigation of magnetic nanoparticles and ultrathin films",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "184 - 189",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002916",
author = "S. Dennler and M.C. Fromen and M.J. Casanove and G.M. Pastor and J. Morillo and J. Hafner",
keywords = "Simulation",
keywords = "Magnetism",
keywords = "Nanoparticles",
keywords = "Ultrathin films",
keywords = "Atomic-scale engineering",
abstract = "This paper reports recent theoretical work on nanostructured materials including magnetic alloyed CoRh nanoparticles that are good candidates to combine both a large magnetic moment and a high magnetic anisotropy, and nanoscale Mn films adsorbed on W substrates as an example of artificial magnetic material. It illustrates how modern atomistic modeling and simulation can fruitfully supplement the experiments performed in the laboratory by helping to resolve and understand the experimental information, by predicting new phenomena and providing useful hints to guide the development of innovative materials with original, specifically tailored properties."
}
@article{Hamdi2008190,
title = "Prototyping bio-nanorobots using molecular dynamics simulation and virtual reality",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "190 - 201",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600293X",
author = "Mustapha Hamdi and Antoine Ferreira and Gaurav Sharma and Constantinos Mavroidis",
keywords = "Bio-nanorobotics",
keywords = "Molecular dynamics",
keywords = "Computational simulation",
keywords = "Virtual reality",
keywords = "Nanotechnology",
keywords = "Proteins",
keywords = "Biomotors",
abstract = "This paper presents a molecular mechanics study using a molecular dynamics software (NAMD) coupled to virtual reality (VR) techniques for intuitive bio-nanorobotic prototyping. Using simulated bio-nano environments in VR, the operator can design and characterize through physical simulation and 3D visualization the behavior of protein-based components and structures. The main novelty of the proposed simulations is based on the characterization of stiffness performances of passive joints-based proteins ( α -helix deca-alanine, repressor of primer protein and immunoglobulin protein) and active joints-based viral protein motor (VPL) in their native environment. Their use as elementary bio-nanorobotic components are also simulated and the results discussed."
}
@article{ValeryA2008202,
title = "Landscape phage as a molecular recognition interface for detection devices",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "202 - 207",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002618",
author = "Valery A. and Petrenko",
keywords = "Biosensor",
keywords = "Sensor",
keywords = "Molecular recognition",
keywords = "Interface",
keywords = "Bacteriophage",
keywords = "Landscape phage",
keywords = "Phage display",
keywords = "Phage library",
keywords = "Bacillus anthracis",
keywords = "Salmonella typhimurium",
keywords = "Nanotechnology",
keywords = "ELISA",
keywords = "Quartz crystal microbalance",
abstract = "Filamentous phages are thread-shaped bacterial viruses. Their outer coat is a tube formed by thousands equal copies of the major coat protein pVIII. Libraries of random peptides fused to pVIII domains were used for selection of phages probes specific for a panel of test antigens and biological threat agents. Because the viral carrier in the phages borne bio-selective probes is infective, they can be cloned individually and propagated indefinitely without needs of their chemical synthesis or reconstructing. As a new bioselective material, landscape phages combine unique characteristics of affinity reagents and self-assembling proteins. Biorecognition layers formed by the phage-derived probes bind biological agents with high affinity and specificity and generate detectable signals in analytical platforms. The performance of phage-derived materials as biorecognition interface was illustrated by detection of Bacillus anthracis spores and Salmonella typhimurium cells. With further refinement, the phage-derived analytical platforms for detecting and monitoring of numerous threat agents may be developed, since phage interface against any bacteria, virus or toxin may be readily selected from the landscape phage libraries. As an interface in the field-use detectors, they may be superior to antibodies, since they are inexpensive, highly specific and strong binders, resistant to high temperatures and environmental stresses."
}
@article{Amitesh2008208,
title = "Multiscale modeling with carbon nanotubes",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "208 - 221",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001200",
author = "Amitesh and Maiti",
keywords = "DFT (density functional theory)",
keywords = "Molecular modeling",
keywords = "NEGF (nonequilibrium Green's function)",
keywords = "Mesoscale modeling",
keywords = "Nanotubes",
keywords = "Sensors",
keywords = "Nanocomposites",
keywords = "NEMS (nanoelectromechanical sensors)",
abstract = "Technologically important nanomaterials come in all shapes and sizes. They can range from small molecules to complex composites and mixtures. Depending upon the spatial dimensions of the system and properties under investigation computer modeling of such materials can range from equilibrium and non-equilibrium quantum mechanics, to force-field-based molecular mechanics and kinetic Monte Carlo, mesoscale simulation of evolving morphology, and finite-element computation of physical properties. This brief review illustrates some of the above modeling techniques through a number of recent applications with carbon nanotubes: nano electromechanical sensors (NEMS), chemical sensors, metal–nanotube contacts, and polymer–nanotube composites."
}
@article{Mizubayashi2008222,
title = "Atom-like behaviors and orbital-related Tomonaga–Luttinger liquids in carbon nano-peapod quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "222 - 227",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001164",
author = "J. Mizubayashi and J. Haruyama and I. Takesue and T. Okazaki and H. Shinohara and Y. Harada and Y. Awano",
keywords = "Carbon nano-peapod",
keywords = "Quantum dot",
keywords = "Shell filling",
keywords = "Single electron tunneling",
keywords = "Fullerenes",
keywords = "Luttinger liquids",
abstract = "We report ballistic charge transport phenomena observed in carbon nano-peapod quantum dots. We find atom-like behaviors (shell filling) sensitive to applied back-gate voltages (Vbg) by single electron spectroscopy. Doubly degenerate electronic levels are found only around ground states at very low Vbg. Those correlations with the presence of nearly free electron states unique to the peapods are discussed. Moreover, we find power laws in conductance versus energy relationships with anomalously high values of power, which are strongly associated with shell filling to the doubly degenerate levels. It is investigated that the powers originate from Tomonaga–Luttinger liquid via the occupied doubly degenerate levels. These results imply that a ballistic charge transport is still preserved at low-Vbg regions in carbon nano-peapod quantum dots in spite of the presence of the encapsulated C60 molecules."
}
@article{Chiamori2008228,
title = "Suspension of nanoparticles in SU-8: Processing and characterization of nanocomposite polymers",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "228 - 236",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001188",
author = "H.C. Chiamori and J.W. Brown and E.V. Adhiprakasha and E.T. Hantsoo and J.B. Straalsund and N.A. Melosh and B.L. Pruitt",
keywords = "Carbon nanotubes",
keywords = "SU-8 photoresist",
keywords = "Diamondoids",
keywords = "Nanocomposites",
abstract = "Composite materials consisting of polymers and nanoparticles can provide additional functionality to existing formulations. Diamondoids, single-wall carbon nanotubes (SWNT), and gold nanospheres were physically incorporated into the negative photoresist SU-8 to investigate their effects on residual stresses and introduce piezoresistivity. The mixtures were spin cast onto silicon or aluminum-coated silicon wafers, lithographically patterned and released from the substrate. The residual stresses, elastic moduli, and viscosity effects of the nanocomposites were measured and compared with those of control samples of SU-8. Electrical properties of SU-8/SWNT nanocomposites were also investigated. The effective elastic modulus of SU-8/diamantane samples remained approximately 1.5–1.6 GPa until the diamantane content exceeded 7 wt%. The viscosity of SU-8/diamantane nanocomposite samples of all tested weight percents decreased compared with control SU-8 at high shear rates (>20 Hz), though high weight percent solutions (>5%) had increased low-frequency viscosity. The effective elastic modulus of the SU-8/SWNT nanocomposites decreased with small wt% additions of SWNT. Additionally, SU-8/SWNT nanocomposites showed increased resistivity with increased strain, suggesting a gauge factor for the 1 wt% SU-8/SWNT nanocomposite of approximately 2–4."
}
@article{Medvid’2008237,
title = "Self-organization of a 2D lattice on a surface of Ge single crystal after irradiation with Nd:YAG laser",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "237 - 240",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001176",
author = "A. Medvid’ and A. Mychko and P. Onufrievs",
keywords = "2D lattice",
keywords = "Self-organization",
keywords = "Nd:YAG laser",
keywords = "Ge single crystal",
keywords = "Temperature gradient",
abstract = "Experimentally observed self-organization of a 2D lattice on the surface of Ge single crystal after irradiation by pulsed Nd:YAG laser is reported. The 2D lattice consists of nano-size hills arranged in a pattern of C6i point group symmetry and is characterized by translational symmetry with the period of 1 μm. Calculations of time-dependent distribution of temperature in the bulk of the Ge sample are presented to explain the phenomenon. The calculations show that overheating of the crystal lattice occurs at laser radiation intensities exceeding 30 MW/cm2. According to synergetic ideas, the presence of the non-equilibrium liquid phase of Ge and a huge gradient of temperature (∼3×108 K/m) can lead to self-organization of the 2D lattice similar to Benard cells."
}
@article{Pettenghi2008241,
title = "Using multi-threshold threshold gates in RTD-based logic design: A case study",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "241 - 247",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002753",
author = "Hector Pettenghi and María J. Avedillo and José M. Quintana",
keywords = "Resonant tunneling diodes",
keywords = "MOBILE",
keywords = "Multi-threshold threshold gate",
keywords = "Nanopipelining",
abstract = "The basic building blocks for resonant tunneling diode (RTD) logic circuits are threshold gates (TGs) instead of the conventional Boolean gates (AND, OR, NAND, NOR) due to the fact that, when designing with RTDs, TGs can be implemented as efficiently as conventional ones, but realize more complex functions. Recently, RTD structures implementing multi-threshold threshold gates (MTTGs) have been proposed which further increase the functionality of the original TGs while maintaining their operating principle and allowing also the implementation of nanopipelining at the gate level. This paper describes the design of n-bit adders using these MTTGs. A comparison with a design based on TGs is carried out showing advantages in terms of power consumption and power delay product."
}
@article{Kulkarni2008248,
title = "Properties of NixZn(1−x)Fe2O4 thick films at microwave frequencies",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "248 - 252",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207004119",
author = "D.C. Kulkarni and S.P. Patil and Vijaya Puri",
keywords = "Ferrite thick film",
keywords = "Microstrip antenna",
keywords = "Overlay",
keywords = "Permittivity",
keywords = "Permeability",
abstract = "The thick film NixZn(1−x)Fe2O4 on alumina substrate was prepared by screen printing of the ferrite powder synthesized by chemical co-precipitation method using nitrate precursors. These NixZn(1−x)Fe2O4 thick films of varying x were characterized by X-ray diffraction, FTIR spectroscopy and SEM (scanning electron microscopy). The permittivity and permeability were measured by overlay technique. Voltage standing wave ratio method was also used to measure the dielectric constant. The permittivity was found to increase with Ni content varying between 13 and 18. The permeability was ∼3.01. The overlay technique provides an easy method for measurement of permittivity and permeability of ferrite thick film."
}
@article{Farag2008253,
title = "Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "253 - 260",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.029",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003424",
author = "A.A.M. Farag and A. Ashery and F.S. Terra",
keywords = "Heterojunctions",
keywords = "Porous silicon",
keywords = "Liquid phase epitaxy",
abstract = "Thin films of InSb were grown on p-type porous silicon (PSi) (1 1 1) substrates by liquid phase epitaxy (LPE) to obtain monocrystalline InSb epilayer on a PSi substrate for low cost device applications. The structural characterization of the devices was carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The X-ray diffraction measurements indicate that InSb monocrystalline epilayer was successfully grown onto PSi. The current–voltage (I–V) characteristics of n-InSb/p-PSi heterojunction devices were measured in the temperature range of 298–398 K. The measurements indicate that these heterojunctions have good rectifying characteristics. The estimated zero-bias barrier height φBO and the ideality factor η show strong temperature dependence. The conventional Richardson plot exhibits linear behavior in the entire temperature range indicating that the conduction seems to be predominantly due to thermionic emission mechanism. In addition, the capacitance-voltage characteristics are investigated at frequency of 1 MHz. The built-in potential of the heterojunction is determined after eliminating the effect of the capacitance effect of the interface state caused by the lattice mismatch."
}
@article{Jahanian2008261,
title = "Using metro-on-chip in physical design flow for congestion and routability improvement",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "261 - 274",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003503",
author = "Ali Jahanian and Morteza Saheb Zamani",
keywords = "Asynchronous serial transmission",
keywords = "Congestion",
keywords = "Physical design",
keywords = "Routability",
abstract = "Routability, signal integrity and manufacturability are important issues in physical design and congestion reduction is a widely used method for ameliorating these problems in current design methodologies. Besides, routing congestion may create large delays in detoured global wires that can be avoided by congestion reduction. In recent years, asynchronous serial transceivers are proposed for data transmission in network-on-chip systems to improve the performance of global wires. However the asynchronous transceivers have not been used for reducing the congestion and improving the routability in the physical design flow.
In this paper, a new methodology is presented in which regular nets are multiplexed by asynchronous serial transceivers in the physical design flow in order to improve routing congestion and design routability. Experimental results show that for attempted benchmarks, the congestion is reduced by 18.97%, the routability is increased by 21.57% on average and total wirelength is decreased up to 9.05%. However, the overhead in power consumption and computation time are 0.12% and 10.01%, respectively, on average."
}
@article{Das2008275,
title = "Reducing parasitic BJT effects in partially depleted SOI digital logic circuits",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "275 - 285",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003849",
author = "Koushik K. Das and Ching-Te Chuang and Richard B. Brown",
keywords = "CMOS-integrated circuits",
keywords = "Silicon-on-insulator",
keywords = "Dynamic logic",
abstract = "This paper presents four new circuit techniques that reduce the parasitic bipolar junction transistor (BJT) effect in digital dynamic logic circuits in partially depleted silicon-on-insulator (PD-SOI) technology. Simulation results have shown the proposed schemes to be effective at various operating voltages. Fully functional test circuits, incorporating some of the proposed techniques, have been designed, fabricated and tested in a 130 nm IBM PD-SOI technology. The measured silicon hardware data validate the simulation predictions and have demonstrated that the new techniques can be easily incorporated to improve the robustness of PD-SOI dynamic logic circuits."
}
@article{Voelker2008286,
title = "Prospect of the future of switched-current circuits with regard to future CMOS technologies",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "286 - 292",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003813",
author = "Matthias Voelker and Johann Hauer and Josef Sauerer",
keywords = "Switched-current",
keywords = "Switched-capacitor",
keywords = "Delta–sigma analog to digital converter",
keywords = "Low voltage",
keywords = "High speed",
abstract = "Low supply voltages in modern CMOS technologies are expected to reduce the maximum resolution of analog to digital converters in voltage mode operation. This paper outlines the functionality and possibilities of switched current (SI) circuit techniques in medium accuracy Δ Σ modulators. Starting with the presentation of different kinds of switched current cells, this paper gives an overview about the simulated performance followed by a comparison of switched current and switched capacitor circuits. A prospect of the future of switched current circuits with regard to future CMOS technologies is given."
}
@article{Farshidi2008293,
title = "A 1.2 V current-mode true RMS–DC converter based on the floating gate MOS translinear principle",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "293 - 298",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003837",
author = "Ebrahim Farshidi and Sayed Masoud Sayedi",
keywords = "Current-mode circuits",
keywords = "Translinear principle",
keywords = "Low-pass filter",
keywords = "Floating gate MOS",
keywords = "RMS–DC converter",
abstract = "A current-mode true RMS–DC converter based on a novel synthesis of translinear loop squarer/divider and simplified current-mode low-pass filter is presented. The circuit employs floating gate MOSFETs that operate in strong inverted saturation region for electronically simulated translinear loop. The converter features very low supply voltage (1.2 V), two-quadrant input current, immunity from body effect, low circuit complexity, and wide input dynamic range. Simulation results by HSPICE show high performance of the circuit and confirm the validity of the proposed design technique."
}
@article{Lee2008299,
title = "Erratum to “Iterative optimization of tail breaking force of 1 mil wire thermosonic ball bonding processes and the influence of plasma cleaning”: [Microelectron. J. 38 (2007) 842–847]",
journal = "Microelectronics Journal",
volume = "39",
number = "2",
pages = "299 - ",
year = "2008",
note = "European Nano Systems (ENS) 2005 European Nano Systems (ENS) 2005",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003278",
author = "J. Lee and M. Mayer and Y. Zhou and S.J. Hong"
}
@article{tagkey2008CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "CO2 - ",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00386-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003862",
key = "tagkey2008CO2"
}
@article{Lee20081,
title = "Non-ideal behavior of a driving resonator loop in a vibratory capacitive microgyroscope",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "1 - 6",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.025",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003473",
author = "Ahra Lee and Hyoungho Ko and Dong-il “Dan” Cho and Gunn Hwang",
keywords = "Microgyroscope driving resonator loop",
keywords = "Non-ideal behavior",
keywords = "Parasitic effect",
keywords = "Simulation model",
abstract = "Many researches have been carried out on the dynamic characteristics of vibratory microgyroscope, but only a few have been carried out on the non-ideal behaviors observed in the driving loop of the vibratory microgyroscope. In this paper, characterization and evaluation of the non-ideal behavior of the vibratory microgyroscope, “peak-and-valley” magnitude phenomenon and phase lag distortion, are discussed. To characterize the non-ideal behavior of a microgyroscope driving loop, a new electro-mechanical simulation model based on the HSPICE of microgyroscope driving loop is proposed. The parasitic capacitive components of the driving loop are found to be the major sources of non-ideal behavior in microgyroscope and it is verified with the simulation results. The validity of the proposed simulation model and the parasitic effects on microgyroscope driving loop is evaluated with the actual fabricated gyroscope."
}
@article{Saad20087,
title = "Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "7 - 11",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003485",
author = "O. Saad and M. Baira and R. Ajjel and H. Maaref and B. Salem and G. Brémond and M. Gendry",
keywords = "Capacitance–voltage analysis",
keywords = "InAs/InAlAs/InP(0 0 1)",
keywords = "Quantum dots",
abstract = "The electronic properties of InAs quantum dots (QDs) grown on InAlAs/InP(0 0 1) were studied by using capacitance–voltage (C–V) analysis and photoluminescence (PL) measurements. The level positions of electrons and holes could be studied separately by using n- and p-type InAlAs matrices, respectively. The holes are found to be more confined than electrons in these kinds of dots."
}
@article{Luo200812,
title = "Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "12 - 19",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003448",
author = "Peiqing Luo and Zhibin Zhou and Youjie Li and Shuquan Lin and Xiaoming Dou and Rongqiang Cui",
keywords = "Deposition pressure",
keywords = "Properties",
keywords = "B-doped nc-Si:H",
keywords = "HWCVD",
abstract = "We report on the effects of deposition pressure Pd on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or μc-Si:H films is not only determined by hydrogen dilution but also the concentration ratio of atomic H to SiH3 ([H]/[SiH3]) on the growing surface which is varied with deposition pressure Pd. Furthermore, there is a threshold of [H]/[SiH3] ratio which we name as overfull hydrogen (OH). When the [H]/[SiH3] ratio is lower than the threshold OH ([H]/[SiH3]<OH), the crystallinity of the nc-Si:H or μc-Si:H films increases with increasing [H]/[SiH3] ratio. But when the [H]/[SiH3] ratio is higher than the threshold OH ([H]/[SiH3]>OH), the crystallinity decreases with increasing [H]/[SiH3] ratio. Finally, the high conductivity of 4.22 S cm−1 of the B-doped nc-Si:H thin film deposited at 15 Pa is obtained."
}
@article{Wang200820,
title = "Hydrogen sensors based on AlGaN/AlN/GaN HEMT",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "20 - 23",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003436",
author = "X.H. Wang and X.L. Wang and C. Feng and C.B. Yang and B.Z. Wang and J.X. Ran and H.L. Xiao and C.M. Wang and J.X. Wang",
keywords = "AlGaN/AlN/GaN HEMT",
keywords = "Hydrogen sensor",
abstract = "Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and diode modes were compared. When the sensor was operated in the FET mode, the sensor can have larger current change of 8 mA, but its sensitivity is only about 0.2. In the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 mA under the forward bias. The sensor had much higher sensitivity when operated in the diode mode than in the FET mode. The oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor."
}
@article{Teh200824,
title = "Design of adaptive supply voltage for sub-threshold logic based on sub-1 V bandgap reference circuit",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "24 - 29",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003126",
author = "Y.K. Teh and F. Mohd-Yasin and F. Choong and M.B.I. Reaz",
abstract = "This paper presents the design methodology to produce an adaptive supply voltage, which is used to drive digital sub-threshold logic system. Design guidelines to maintain constant speed and power via adaptive VDD regulation are presented first. Then the paper discusses modification of sub-1 V bandgap reference (BGR) circuits using dynamic threshold MOSFET technique to provide the necessary adaptive reference voltage. Another well-known sub-1 V BGR circuit using current mode technique is also fabricated and compared. Both circuits are implemented in CMOS 0.18 μm technology. Empirical data from SPICE simulation and first order approximation techniques are used to derive analytical design models used inside BGR circuit. Measurement results of both the fabricated circuits show reference voltage output of 500 mV range; which are in good match of SPICE simulation."
}
@article{Gök200830,
title = "Multi-functional floating-point MAF designs with dot product support",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "30 - 43",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003497",
author = "Mustafa Gök and Metin Mete Özbilen",
keywords = "Floating-point multiply-add",
keywords = "Dot-product",
keywords = "Multi-precision",
abstract = "This paper presents multi-functional double-precision and quadruple-precision floating-point multiply-add fused (FPMAF) designs. The double-precision FPMAF design can execute adouble-precision floating-point multiply-add, or two single-precision floating-point multiplications, or a single-precision floating-point dot product. The quadruple-precision FPMAF can perform similar operations with quadruple, double and single precision operands. These architectures can perform a dot-product operation two times or more faster than a basic FPMAF design. The presented multi-functional designs are compared with basic double-precision and quadruple-precision FPMAF designs by ASIC syntheses. The syntheses results show that the proposed double-precision implementation has 8%more area than a standard double-precision FPMAF implementation, and the proposed quadruple-precision design has 12.5% more area than a standard quadruple-precision FPMAF. Both of the proposed designs have one more pipeline stage compared to the basic designs."
}
@article{Wu200844,
title = "Design and fabrication of in-plane resonant microcantilevers",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "44 - 48",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003461",
author = "Yuehua Wu and Grigory Panaitov and Yi Zhang and Norbert Klein",
keywords = "Microcantilever",
keywords = "Thermal actuation",
keywords = "Microelectromechanical device",
abstract = "An in-plane resonant bimetal microcantilever based on thermal actuation mechanism was developed utilizing the photolithography technique. The microcantilever structure consists of a platform, a long narrow anchor, and a U-shape actuation loop. Niobium and gold are used as materials for fabrication of the microcantilever. In the cantilever design the shortcoming of low actuation frequency was overcome by separating the thermal actuator part and the microcantilever part. According to the dynamic property tests, the in-plane resonant frequency of our microcantilevers is one order of magnitude higher than the out-of-plane one. With further optimizing the design, our microcantilevers may have applications as actuators and biosensors."
}
@article{Zhou200849,
title = "Exciton enhancement effect on the third harmonic generation in ZnS/CdSe quantum dot quantum well",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "49 - 52",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.026",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700345X",
author = "Hongming Zhou and Guiguang Xiong",
keywords = "Quantum dot quantum well",
keywords = "Exciton enhancement effect",
keywords = "Third-harmonic generation",
abstract = "Exciton enhancement effect on the third-order optical nonlinearities of a ZnS/CdSe quantum dot quantum well (QDQW) has been theoretically studied. The wave functions and eigenenergies of excitons in QDQW have been calculated under the effective-mass approximation. By solving a three-dimensional nonlinear Schrödinger equation and by means of compact density matrix method, the third-order nonlinear susceptibilities for third-harmonic generation (THG) have been calculated in a two energy levels model of QDQW. Firstly, we studied the size effect on THG in QDQW. Then we compared the value of THG with the case that only considering electron states. The results show that the THG is greatly enhanced when compared with the condition just considering electron states."
}
@article{Shuqi200853,
title = "Investigation of the degradation of smooth SiGe epitaxial layer on Si substrate",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "53 - 56",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003217",
author = "Shuqi and Zheng",
keywords = "Degradation",
keywords = "Smooth SiGe film",
keywords = "TEM",
keywords = "AFM",
abstract = "The degradation of smooth SiGe epitaxial layer was investigated by transmission electron microscopy (TEM), X-ray reflectivity (XRR) and atomic force microscopy (AFM). It was shown from AFM results that the crosshatch was formed with increasing annealing temperature, which indicated the degradation of smooth surface. The surface degradation was caused by the internal dislocations, which were observed by plan-view TEM (PTEM) and cross-sectional TEM (XTEM). From XTEM, the sharp interface between SiGe top layer and Si substrate was broadened and there were a lot of 60° dislocations formed in SiGe top layer, which resulted in the crosshatch on the surface. The crosshatch was also verified by PTEM."
}
@article{Lee200857,
title = "Shielding region effects on a trench gate IGBT",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "57 - 62",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003229",
author = "Jong-Seok Lee and Ey-Goo Kang and Man Young Sung",
keywords = "Trench",
keywords = "IGBT",
keywords = "Breakdown voltage",
keywords = "On-state voltage drop",
keywords = "Shielding region",
abstract = "In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region located in the bottom of a trench gate. By simulation results, we verified that a shielding region reduced the electric fields not only in the gate oxide but also in the P-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved, but little forward voltage drop, which causes on-state loss to be increased by about 0.06 V in the shielded trench gate IGBT."
}
@article{Aissat200863,
title = "Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "63 - 66",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003205",
author = "A. Aissat and S. Nacer and M. Bensebti and J.P. Vilcot",
keywords = "Lasers diode",
keywords = "Strained quantum wells",
keywords = "GaInNAs",
keywords = "GaInNAsSb/GaAs",
keywords = "Optoelectronics",
keywords = "Semiconductor",
abstract = "In this paper, we study the effect of the incorporation of nitrogen in strained GaInAs quantum well structures. We evaluate the influence of nitrogen on the conduction band energy by using the band anticrossing model. The incorporation of nitrogen appears to decrease the bandgap energy and increase the emission wavelength. The reduction of energy is due to the interaction of the energy of the conduction band with the level of nitrogen and more the concentration of nitrogen increases, more the energy of the band gap decreases. On the other hand, the emission wavelength increases, the advantage of the incorporation of nitrogen in such structures is to vary the wavelength between 0.980 and 1.3 μm while exploiting of course the composition of gallium, composition of nitrogen and the thickness of the quantum well. Less temperature insensitive devices are so intended to be fabricated."
}
@article{Yang200867,
title = "Well-defined electrical properties of high-strain resonant interband tunneling structure",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "67 - 69",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.027",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003266",
author = "Chih Chin Yang and Yan Kuin Su",
keywords = "GaAs/InAs",
keywords = "Interband tunneling",
keywords = "Current density",
abstract = "The GaAs/InAs high-strain resonant interband tunneling diodes (HSRITDs) have been implemented by metal organic chemical vapor deposition (MOCVD). The current–voltage characteristics of variable quantum well and barrier thickness grown on (1 1 1) GaAs substrates are investigated. Experimental results reveal that the quantum barrier and well layer will influence current–voltage properties such as the peak current density, valley current density, and peak-to-valley current ratio (PVCR). Both peak current and valley current density decrease with increasing layers width. This result also exhibits the variation of PVCR with layers width."
}
@article{Li200870,
title = "The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "70 - 73",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003199",
author = "Shuti Li and Guanghan Fan and Huiqing Sun and Shuwen Zheng",
keywords = "Semiconductors",
keywords = "Thin films",
keywords = "Epitaxial growth",
keywords = "Electrochemical measurements",
keywords = "Electrical properties",
abstract = "The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells (MQWs) light-emitting diode wafers was studied by means of electrochemical capacitance–voltage (ECV) and photoluminescence (PL). Compared with the sample unannealed, the hole carrier concentration of p-GaP layer increased from 5.5×1018 to 6.5×1018 cm−3, and the hole carrier concentration of p-AlGaInP layer increased from 6.0×1017 to 1.1×1018 cm−3, after wafer was annealed at 460 °C for 15 min in nitrogen. The hole carrier concentrations of p-GaP layers and p-AlGaInP layers did not obviously change when the annealing temperature varied from 460 to 700 °C. However, after the sample was annealed under 780 °C for 15 min, the hole carrier concentration of p-GaP layer and p-AlGaInP layer decreased to 8×1017 and 1.7×1017 cm−3, respectively. At the same time, the diffusion of Mg atoms was observed."
}
@article{Jiang200874,
title = "Exciton states in wurtzite and zinc-blende InGaN/GaN coupled quantum dots",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "74 - 79",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003254",
author = "Fengchun Jiang and Congxin Xia and Shuyi Wei",
keywords = "Exciton",
keywords = "Coupled quantum dots",
keywords = "InGaN",
abstract = "Based on the effective-mass approximation, exciton states in wurtzite (WZ) and zinc-blende (ZB) InGaN/GaN coupled quantum dots (QDs) are studied by means of a variational method. Numerical results show clearly that both the sizes and In content of QDs have a significant influence on exciton states in WZ and ZB InGaN/GaN coupled QDs. Moreover, the ground-state exciton binding energy decreases when the interdot barrier layer thickness increases in the WZ InGaN/GaN coupled QDs. However, the ground-state exciton binding energy has a minimum if the interdot barrier layer thickness increases in the ZB InGaN/GaN coupled QDs."
}
@article{Benmaza200880,
title = "Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "80 - 84",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003242",
author = "H. Benmaza and B. Akkal and H. Abid and J.M. Bluet and M. Anani and Z. Bensaad",
keywords = "Schottky diode",
keywords = "Barrier height",
keywords = "Inhomogeneities",
keywords = "Ni/SiC-6H material",
abstract = "Two models have been used in order to explain the anomalies observed in a Ni/SiC-6H Schottky n-type diode I(V) characteristic. Both, parallel conduction and potential fluctuation models showed that the barrier's height is around a mean value of 1.86 V, corresponding to a factor of ideality of n=1. Another conclusion was that φ B i ¯ ≡ φ B C = 1.88 V.
It has been, also, explained why the Arrhénius or Richardson plot (ln(Is/T2) versus 1/T) is not linear and why the area of the low barrier height Al, representing a defective zone, is approximately about 0.12% of the total area contact."
}
@article{Shang200885,
title = "Enhanced field emission from printed CNTs by high-temperature sintering and plasma bombarding in hydrogen",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "85 - 89",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003230",
author = "Shiguang Shang and Changchun Zhu and Weihua Liu",
keywords = "Field emission",
keywords = "Carbon nanotube",
keywords = "Plasma bombarding",
abstract = "A novel post-treatment, including high-temperature sintering and plasma bombarding in hydrogen ambient, was performed intentionally to improve the field emission capability and stability of screen-printed carbon nanotubes (CNTs). With this treatment, the organic bonding material covering on the CNTs was preferentially removed. And the CNTs were wetted and filled by silver at the interface between the CNTs and silver electrode so that a reliable ohmic contact was achieved. These effects improved the field emission capability and stability of CNT cathode. Moreover, the equal-high CNT emitters, after the removal of the excessively protruded CNT tips/or arches, would improve the luminescence uniformity. It is suggested that a high-temperature sintering and plasma bombarding in hydrogen may be a key technology for the commercialization of CNT field emission display."
}
@article{Yang200890,
title = "High performance aluminum arsenic intraband resonant microwave devices",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "90 - 93",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002972",
author = "Chih Chin Yang and Yan Kuin Su",
keywords = "Resonant tunneling diode",
keywords = "Peak to valley current ratio",
keywords = "AlAs/GaAs heterostructure",
abstract = "We report on GaAs/AlAs triple-barrier quantum well intraband (TBQWI) heterostructures grown by molecular beam epitaxy (MBE) on n+ GaAs substrate. Heterostructure quality was evaluated by X-ray diffraction and photoluminescence spectrum measurements. The position of the broad peak near 65.84° corresponds well to the diffraction from the (4 0 0) face of AlAs layers assuming intensity of total AlAs spacers and barriers. The 10K photoluminescence (PL) data has a strong peak at 8140 Å. The PL spectrum is dominated by a sharp peak centered at the emission energy of 1.52 eV attributed to the energy of e1-hh bond exciton of GaAs layer. TBQWI heterostructures were grown and processed into resonant tunneling diode (RTD). Room temperature electrical measurement of the TBQWI RTD yielded maximum peak to valley current ratio (PVCR) of 120 with peak current density (Jp) of 2.1 kA/cm2. The high PVCR of this GaAs/AlAs TBQWI RTD is, to the better of our knowledge, one of the higher PVCRs obtained in any intraband tunnel device."
}
@article{Kim200894,
title = "Efficient electron beam condensing for low-energy microcolumn lithography",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "94 - 98",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.030",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003084",
author = "Ho Seob Kim and Seungjoon Ahn and Dae Wook Kim and Tae-Sik Oh and Seong Joon Ahn",
keywords = "Lithography",
keywords = "Microcolumn",
keywords = "Electron microscopy",
keywords = "Electron probe",
abstract = "Low-energy electron beam lithography has been performed with a microcolumn by adopting a new technique that condenses the electron beam efficiently. To increase the probe current while keeping the kinetic energy of electrons sufficiently low, the negative or positive bias has been applied to the accelerator electrode, which reduces the divergence of the electron beam and hence makes more electrons pass through the microcolumn. With this technique, the probe current more than 1 nA has been achieved, which is large enough for the practical application of microcolumn lithography even when the kinetic energy of electrons is as low as 160 eV. The results of microcolumn lithography by using the condensed electron beam with a low-energy of 160 and 327 eV are also presented."
}
@article{Hocini200899,
title = "Birefringence in magneto-optical rib waveguides made by SiO2/TiO2 doped with γ-Fe2O3",
journal = "Microelectronics Journal",
volume = "39",
number = "1",
pages = "99 - 102",
year = "2008",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002807",
author = "A. Hocini and T. Boumaza and M. Bouchemat and F. Royer and D. Jamon and J.J. Rousseau",
keywords = "Integrated optics",
keywords = "Magneto-optic waveguides",
keywords = "Rib waveguides",
keywords = "Birefringence",
keywords = "Phase matching",
abstract = "Magneto-optic waveguides are the basic elements for nonreciprocal integrated optics; the phase matching between the fundamental TE and TM modes is an essential condition in magneto-optic waveguides. This condition can be satisfied with selected geometries planar or rib waveguides. We simulated the performance of such devices and determined the waveguide dimensions (height, width, and etching depth) that would allow the same propagation constants for both polarizations TE and TM."
}
@article{tagkey2007CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "CO2 - ",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00369-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003692",
key = "tagkey2007CO2"
}
@article{Torrens20071109,
title = "Effect of packing on the cluster nature of C nanotubes: An information entropy analysis",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1109 - 1122",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000681",
author = "Francisco Torrens and Gloria Castellano",
keywords = "Solubity of carbon nanotubes",
keywords = "Bundlet model for clusters",
keywords = "Droplet model for clusters",
keywords = "Nanotube",
keywords = "Fullerene",
keywords = "Nanohorn",
abstract = "The possibility of the existence of single−wall carbon nanotubes (SWNTs) in organic solvents in the form of clusters is discussed. A theory is developed based on a bundlet model for clusters, which enables describing the distribution function of clusters by size. Comparison of the calculated values of solubility with experiments would permit obtaining energetic parameters characterizing the interaction of an SWNT with its surrounding, in a solid or solution. Fullerenes and SWNTs are unique objects, whose behaviour in many physical situations is characterized by remarkable peculiarities. Peculiarities in solutions show up first in that fullerenes and SWNTs represent the only soluble forms of carbon, what is related to the originality in the molecular structure of fullerenes and SWNTs. The fullerene molecule is a virtually uniform closed spherical or spheroidal surface, and an SWNT is a smooth cylindrical unit. Both structures give rise to the relatively weak interaction between the neighbouring molecules in a crystal and promote interaction of the molecules with those of a solvent. Another peculiarity in solutions is related to their trend to form clusters, consisting of a number of fullerene molecules or SWNTs. The energy of interaction of a fullerene molecule or SWNT with solvent molecules is proportional to the surface of the former molecule and roughly independent of the orientation of solvent molecules. All these phenomena have a unified explanation in the framework of the bundlet model of a cluster, in accordance with which the free energy of an SWNT involved in a cluster is combined from two components, viz. a volume one proportional to the number of molecules n in a cluster, and a surface one proportional to n1/2. Algorithms for classification are proposed based on the criteria information entropy and its production. Many classification algorithms are based on information entropy. When applying these procedures to sets of moderate size, an excessive number of results appear compatible with data, and this number suffers a combinatorial explosion. However, after the equipartition conjecture, one has a selection criterion between different variants resulting from classification between hierarchical trees. According to this conjecture, for a given charge or duty, the best configuration of a flowsheet is the one in which the entropy production is most uniformly distributed. Information entropy, cluster and principal component analyses agree."
}
@article{Nieuwoudt20071123,
title = "Narrow-band low-noise amplifier synthesis for high-performance system-on-chip design",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1123 - 1134",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002765",
author = "Arthur Nieuwoudt and Tamer Ragheb and Yehia Massoud",
keywords = "Low noise amplifier",
keywords = "LNA optimization",
keywords = "Analog synthesis",
abstract = "In this paper, we present a systematic synthesis methodology for fully integrated narrow-band CMOS low-noise amplifiers (LNAs) in high-performance system-on-chip (SoC) designs. The methodology is based on deterministic gradient-based numerical nonlinear optimization and the normal boundary intersection (NBI) method for Pareto optimization. We simultaneously optimize transistor widths, bias voltages, and input and output matching network passive components, which yields integrated inductor values that are more than one order of magnitude less than those generated by several existing equation-based LNA design techniques. By generating significantly smaller inductor values, we enable the SoC integration of the complete LNA. When the synthesized LNAs are characterized using circuit-level simulation, our methodology yields up to 35% and 58% improvement in noise figure and gain, respectively."
}
@article{SacristánRiquelme20071135,
title = "Implantable stimulator and recording device for artificial prosthesis control",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1135 - 1149",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003060",
author = "Jordi Sacristán-Riquelme and M. Teresa Osés",
keywords = "Microstimulation",
keywords = "Microelectrodes",
keywords = "Implantable microelectronics",
keywords = "Charge balancing",
keywords = "Current source",
keywords = "Low-noise amplifiers",
abstract = "This paper presents an application-specific integrated circuit (ASIC) consisting of both, a four-channel neural stimulator and a single-channel recording amplifier, along with their digital control and regulated voltage supplies. The ASIC has been designed to be compatible with different types of electrodes although the use of sieve electrodes was considered a priority. The main performances of this ASIC as stimulator are: fully programmability for several stimuli shapes (monophasic, biphasic, arbitrary amplitude/duration pairs for stimulation and recovery phases), wide frequency range (7 Hz to more than 350 Hz with 1 Hz resolution) and high-current range ( > 1.5 mA in two scales, with 6 bits resolution). Furthermore, any anode can be associated with any cathode, thus improving the spatial selectivity of some electrode types. From the recording viewpoint, the ASIC exhibits very low noise ( 5 nV / Hz ) , high CMRR (94 dB) and digitally programmable gain and bandwidth. The overall digital control is designed to control up to 16 stimulation channels and four recording amplifiers using a regular and modular implementation for the analog parts which gives rise to higher ASIC performances with a small increase in area. The system has been integrated using high voltage CMOS 0.7 μ m technology. “In vitro” experimental results are also presented."
}
@article{Toofan20071150,
title = "A low-power and high-gain fully integrated CMOS LNA",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1150 - 1155",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003096",
author = "S. Toofan and A.R. Rahmati and A. Abrishamifar and G. Roientan Lahiji",
keywords = "LNA design",
keywords = "Low noise amplifier",
keywords = "Low voltage design",
keywords = "RF CMOS",
abstract = "In this paper, we present the design of a fully integrated CMOS low noise amplifier (LNA) with on-chip spiral inductors in 0.18 μm CMOS technology for 2.4 GHz frequency range. Using cascode configuration, lower power consumption with higher voltage and power gain are achieved. In this configuration, we managed to have a good trade off among low noise, high gain, and stability. Using common-gate (CG) configuration, we reduced the parasitic effects of Cgd and therefore alleviated the stability and linearity of the amplifier. This configuration provides more reverse isolation that is also important in LNA design. The LNA presented here offers a good noise performance. Complete simulation analysis of the circuit results in center frequency of 2.4 GHz, with 37.6 dB voltage gain, 2.3 dB noise figure (NF), 50 Ω input impedance, 450 MHz 3 dB power bandwidth, 11.2 dB power gain (S21), high reverse isolation (S12)<−60 dB, while dissipating 2.7 mW at 1.8 V power supply."
}
@article{Troudi20071156,
title = "Macro-modeling for the compact simulation of single electron transistor using SIMPLORER",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1156 - 1160",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002674",
author = "M. Troudi and Na. Sghaier and A. Boubaker and A. Souifi and A. Kalboussi",
keywords = "Single electron transistor (SET)",
keywords = "Macro-model",
keywords = "SIMPLORER",
keywords = "Quantizer",
keywords = "Coulomb blockade",
abstract = "In this paper we present analog and digital studies of the single electron transistor (SET), in which only one electron at the time is transferred through the circuit. In the first part of this paper, we show numerical simulations of fundamental characteristics of SET using MATLAB. As a second part of this work we develop a closely example of macro-model of SET using SIMPLORER. Our idea to concept this macro-model was based on the quantification of the output signal on the island level. In order to obtain a quantified output signal on the island we have modeled a quantum dots as a quantizer bloc. This signal quantified was correlated to the energy levels. This description of a model let us to valid our conception and to value the impact of quantizer bloc on the output response of the SET."
}
@article{Kliros20071161,
title = "Beating of the oscillations in the magnetocapacitance of a MODFET with Rasba spin–orbit interaction",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1161 - 1168",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002686",
author = "G.S. Kliros and P.C. Divari",
keywords = "Spin–orbit interaction",
keywords = "MODFETs",
keywords = "Mesoscopic devices",
keywords = "Lateral surface superlattices",
keywords = "Magnetocapacitance",
abstract = "The effect of Rasba spin–orbit interaction (SOI) on the magnetocapacitance of the 2DEG in a MODFET is investigated. We present calculations on the density of states (DOS) of the 2DEG in a MODFET under the influence of both Rasba SOI and weak two-dimensional periodic modulation. Adopting a Gaussian broadening of magnetic-field-dependent width, we present a simple expression for the DOS, valid for the relevant weak magnetic fields and modulation strengths. In the presence of Rasba SOI and for weak potential modulation strengths, a typical beating pattern of the magnetocapacitance oscillations is observed in the low magnetic filed range. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the SOI and the periodic potential modulation is discussed."
}
@article{Dima20071169,
title = "Bistable hybrids in sol–gel technology for switching devices",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1169 - 1174",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700273X",
author = "Antonela Dima and Francesco Della Corte and Ivo Rendina and Mihai O. Dima",
keywords = "Rose Bengal",
keywords = "Bistable organic",
keywords = "Switching devices",
keywords = "Sol–gel",
abstract = "Development of memories based on organic soft materials is a current industrial niche aimed at the upper contacts flash memories. The electrical bistability of such materials makes them ideal candidates for cost-effective, fast-programming switching devices. Hybrid thin films of SiO2 with Rose Bengal (bis-triethylammonium) dopant are here reported for the first time, together with their characterisations. Technology-wise the main advantage of the films is the possibility to cast photolithographically, which is also cost-effective. The physical and chemical stability of the films yields reproducible devices, from both the microtechnological and electrical point of view."
}
@article{Wang20071175,
title = "Design, fabrication and performance of a new vibration-based electromagnetic micro power generator",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1175 - 1180",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003035",
author = "Pei-Hong Wang and Xu-Han Dai and Dong-Ming Fang and Xiao-Lin Zhao",
keywords = "Micro power generator",
keywords = "Vibration",
keywords = "Electromagnetic",
keywords = "MEMS technology",
keywords = "Copper planar spring",
abstract = "This paper presents a new vibration-based electromagnetic micro power generator fabricated using microelectromechanical systems (MEMS) technology, which can convert ambient vibration energy into electric power. The microgenerator consists of a permanent magnet of NdFeB, a copper planar spring and a two-layer copper coil. ANSYS modal analysis was used to predict the resonant frequencies and resonant vibration modes of the spring-mass system. The detailed fabrication processes of the microgenerator are given. Experimental results show that the prototype microgenerator can generate open-circuit voltage of 60 mV ac peak–peak with 121.25 Hz input frequency and the acceleration of 1.5g (g=9.8 m/s2). The experimental and simulated results were compared and discussed."
}
@article{Mukherjee20071181,
title = "Photoluminescence studies from micropillars fabricated on IV–VI multiple quantum-well semiconductor structure",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1181 - 1184",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002728",
author = "S. Mukherjee and S. Jain and F. Zhao and J.P. Kar and Z. Shi",
keywords = "Photoluminescence",
keywords = "MQW micropillar",
keywords = "MBE",
keywords = "SEM",
abstract = "Micropillars were fabricated on multiple quantum-well structure of PbSe/PbSrSe grown on top of BaF2 substrate in molecular beam epitaxy (MBE). The photoluminescence spectra from the pillar structure, having a diameter of 5 μm and inter-pillar distance of 8 μm, was studied at various temperature starting from 77 to 300 K. There had been an approximately consistent red-shift of photoluminescence peak of ∼3.62 cm−1 for unit K change in ambient temperature. The prominent and repeatable emission from the micropillars at various temperatures signified high crystalline nature of the fabricated micro-objects. This type of micropillar structure is one of the magnificent contenders of future opto-electronic micro-features."
}
@article{Bai20071185,
title = "Organic thin-film field-effect transistors with MoO3/Al electrode and OTS/SiO2 bilayer gate insulator",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1185 - 1190",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002716",
author = "Y. Bai and X. Liu and L. Chen and Khizar-ul-Haq and M.A. Khan and W.Q. Zhu and X.Y. Jiang and Z.L. Zhang",
keywords = "Organic thin-film transistor",
keywords = "Modified electrode",
keywords = "Bilayer insulator",
abstract = "An organic thin-film transistor (OTFTs) having OTS/SiO2 bilayer gate insulator and MoO3/Al electrode configuration between gate insulator and source–drain (S–D) electrodes has been investigated. Thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine (CuPc) for an active layer. We have found that using silane coupling agents, octadecyltrichlorosilane (OTS) on SiO2, surface energy of SiO2 gate dielectric is reduced; consequently, the device performance has been improved significantly. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage and improves the on/off ratios simultaneously. The device with MoO3/Al electrode has similar source–drain current (IDS) compared to the device with Au electrode at same gate voltage. Our results indicate that using double-layer of insulator and modified electrode is an effective way to improve OTFT performance."
}
@article{Weng20071191,
title = "Formation of porous InP by cathodic decomposition",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1191 - 1195",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002790",
author = "Zhankun Weng and Aimin Liu and Yanhong Liu and Huijing Luo and Feng Xu and Xiuping Liang and Guotong Du",
keywords = "Cathodic decomposition",
keywords = "Cyclic voltammetry",
keywords = "Porous InP",
abstract = "Here we present a way to fabricate porous structure of InP by cathodic decomposition in a mixture of HCl and HNO3. The direction of main pores was observed with a misorientation of ∼8° relative to [1 0 0]. Parallel side pores were grown on wall with a misorientation of ∼54° and ∼43° relative to [1 0 0] at −1.8 and −2.3 V, respectively. If the applied potential becomes more negative, the side pores interconnected is more obvious. Most of the electrons are concentrated on tips of the pores due to field enhancement effects, which results in the prior decomposition of InP at the tips of the pores in the process. The growth of the main pore is along with electric field direction. The formation of nonsymmetrical side pores is also discussed in the article."
}
@article{Magafas20071196,
title = "Optimization of Al/a-SiC:H optical sensor device by means of thermal annealing",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1196 - 1201",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002844",
author = "L. Magafas and J. Kalomiros",
keywords = "Optical sensor",
keywords = "Schottky diode",
keywords = "Thermal annealing",
abstract = "The optimization of optoelectronic properties of Al/a-SiC:H Schottky diodes grown as Al/a-SiC:H/c-Si(n) structures is studied by means of thermal annealing of a-SiC:H thin films. According to the spectral response of the Schottky diodes the measured quantum efficiency, ηmeasured, increases with increasing annealing temperature (400–600 °C), whereas ηmeasured decreases for Ta>600 °C. For Ta=600 °C, optimum material quality of a-SiC:H films is achieved and the spectral response of the Al/a-SiC:H/c-S(n) structures present very high and almost constant values (ηmeasured⩾80%) for the whole range of wavelengths from 500 up to 850 nm. These results show that our Al/a-SiC:H/c-S(n) structures can be very attractive as optical sensors. Diffusion length calculations as well as the mobility by lifetime product (μτ)p of the minority carriers (holes) of a-SiC:H films present a dependence on Ta similar to that of the measured quantum efficiency. Finally, the quantum efficiency of films processed with Ta=675 °C is found to increase when the Al/a-SiC:H/c-S(n) structures are exposed to hydrogen, a result that could be promising for the construction of a hydrogen detection sensor."
}
@article{Chang20071202,
title = "Smooth indium zinc oxide film prepared by sputtering a In2O3:ZnO=95:5 target",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1202 - 1206",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002820",
author = "Shang-Chou Chang and Ming-Hua Shiao",
keywords = "Indium zinc oxide",
keywords = "Sputtering",
abstract = "Indium zinc oxide (IZO) films with surface roughness Ra<0.3 nm have been prepared by radio frequency sputtering. The IZO film is the possible candidate for replacing the indium tin oxide (ITO) film in pattern precision or low processing temperature concern. Instead of commonly used In2O3:ZnO=90:10 in weight percentage (wt%) target, a target doped with 5 wt% impurities was used in this study. It was found that the electrical resistivity of the IZO film increases rapidly if oxygen gas was introduced during the sputtering process. This increase tendency in electrical resistivity is much more significant than the IZO film prepared with a 10 wt% doped ZnO target. The electrical resistivity increased rapidly as soon as the IZO film became crystallized in heat treatment. Optical properties of the IZO film do not change significantly with varying process parameters. The appropriate processing condition for the prepared IZO film is no oxygen feeding and no heat treatment."
}
@article{Zhou20071207,
title = "Temperature-controlled self-organized InP nanostructures grown on GaAs(1 0 0) substrate by MOCVD",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1207 - 1210",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002819",
author = "J. Zhou and X.M. Ren and Q. Wang and Y.Q. Huang and J.H. Lv and H. Huang and S.W. Cai",
keywords = "Nanostructure",
keywords = "Atomic force microscopy",
keywords = "Diffusion",
keywords = "Metalorganic chemical vapor deposition",
keywords = "InP-on-GaAs",
abstract = "The self-organized InP nanostructures grown on GaAs(0 0 1) substrates by metalorganic vapor deposition were examined in detail using atomic force microscopy. By properly selecting growth temperature, three kinds of nanostructure, islands, pits and ripples were formed. For growth temperature of 400–450 °C, the surface morphologies were governed by islands; but, for the growth temperature of 500 °C, the formation of surface ripples instead of islands was presumably due to the combination effect of temperature-controlled surface kinetics and strain effect. On the other hand, the observation of enhanced growth of pits upon a high-temperature annealing (at 685 °C for 90 s) indicated that the strained InP epitaxial film would be morphologically stabilized by taking the form of pits formation."
}
@article{Lupan20071211,
title = "Fabrication of ZnO nanorod-based hydrogen gas nanosensor",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1211 - 1216",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002704",
author = "Oleg Lupan and Guangyu Chai and Lee Chow",
keywords = "Nanoscale materials and structures",
keywords = "Nanofabrication",
keywords = "Gas sensor",
keywords = "Hydrogen",
keywords = "ZnO branched nanorod",
abstract = "We report a first work on nanofabrication of hydrogen nanosensor from single ZnO branched nanorods (tripod) using in-situ lift-out technique and performed in the chamber of focused ion beam (FIB) system. Self-assembled ZnO branched nanorod has been grown by a cost-effective and fast synthesis route using an aqueous solution method and rapid thermal processing. Their properties were analyzed by X-ray diffraction, scanning electron microscopy, energy dispersion X-ray spectroscopy, transmission electron microscopy, and micro-Raman spectroscopy. These analyses indicate high quality ZnO nanorods. Furthermore, our synthesis technique permits branched nanorods to be easily transferred to other substrates. This flexibility of substrate choice opens the possibility of using FIB system for handling.
The main advantage of the proposed in-situ approach is a controllable lift-out procedure which permitted us to obtain a 90% success rate for building nanodevices. The fabricated nanosensor uses only single self-assembled ZnO branched nanorod (tripod) to gauge the 150 ppm H2 in the air at room temperature. The hydrogen sensitivity is in the range of 0.6–2% depending on which two branches to use. The nanosensor has selectivity against other gases such as O2, CH4, CO and LPG, which shows sensitivity of <0.02%. The single ZnO branched nanorod sensor can operate at low power of <5 μW."
}
@article{Mil'shtein20071217,
title = "Light emission from semiconductor triode",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1217 - 1219",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002698",
author = "S. Mil'shtein and J. Palma and C. Liessner and C. Gil",
keywords = "HEMT",
keywords = "Light emission",
keywords = "Breakdown",
abstract = "Light emission in a novel HEMT-like structure was observed under conditions of strong reverse bias on the Schottky gate with a positive bias on the drain. Two distinct regions of light emission are present in the device with emission of red shaded light at the drain side of the gate and off-white color emission at the drain. These two distinct colors are clearly visible with the use of a microscope. The bias levels under which light emission occurs approach those necessary for catastrophic device breakdown. In the continuation of the study, spectroscopy of the emitted light is planned."
}
@article{ShangChou20071220,
title = "Low-pressure H2/N2 annealing on indium tin oxide film",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1220 - 1225",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003059",
author = "Shang-Chou and Chang",
keywords = "Indium tin oxide",
keywords = "H2/N2",
keywords = "Annealing",
abstract = "Annealing of indium tin oxide (ITO) film in low-pressure H2/N2 was investigated. On carefully selecting the annealing process window, apparent electrical property improvement as well as good optical property can be obtained. It was found that ITO annealed with 2 Pa, H2/N2:6/6 sccm, at 500 °C for an hour can increase its electrical conductivity 60% more than ITO without annealing, 58% more than ITO annealed with pure H2. An annealed ITO without specially selected recipe can easily possess worse electrical and optical properties than that without annealing. It can be explained that annealing ITO in a hydrogen-contained environment can lead to hydrogen reduction–oxygen vacancy playing a donor role in ITO; however, annealing also provides the energy to remove ITO material defects including donors."
}
@article{Yadav20071226,
title = "Sensing behavior and mechanism of titanium dioxide-based MOS hydrogen sensor",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1226 - 1232",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002868",
author = "Lallan Yadav and Naveen Chandra Gupta and R. Dwivedi and Ravi S. Singh",
keywords = "Sensor",
keywords = "Hydrogen gas",
keywords = "Titanium dioxide",
keywords = "Flat-band voltage",
abstract = "A Pd/TiO2/Si MOS sensor (Pdtisin sensor) is proposed for the detection of hydrogen gas. The sensor is fabricated on a p-type 〈1 1 1〉 silicon wafer having resistivity of 3–6 Ω cm. The thickness of TiO2 in this structure is about 600 nm. The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of the device is observed on the exposure of hydrogen gas at room temperature. The mechanism of hydrogen sensing of titanium dioxide-based MOS sensor (MOS capacitor) has been investigated by evaluating the change in flat-band voltage (VFB) and fixed surface state density of the device in presence of hydrogen gas. The device exhibits very large parallel shift in C–V as well in G–V characteristics. The possible mechanism on Pd/TiO2 and TiO2/Si surface in presence of hydrogen gas has been proposed. The response and recovery time of the device is also measured at room temperature."
}
@article{PérezTomás20071233,
title = "High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC",
journal = "Microelectronics Journal",
volume = "38",
number = "12",
pages = "1233 - 1237",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002856",
author = "A. Pérez-Tomás and M.R. Jennings and M. Davis and V. Shah and T. Grasby and J.A. Covington and P.A. Mawby",
keywords = "Silicon carbide",
keywords = "Silicon",
keywords = "Heterodiodes",
keywords = "High doping Si",
keywords = "Rectifying contact",
abstract = "The physical and electrical properties of heavily doped silicon (5×1019 cm−3) deposited by molecular beam epitaxy (MBE) on 4H-SiC are investigated in this paper. Silicon layers on silicon carbide have a broad number of potential applications including device fabrication or passivation when oxidised. In particular, Si/SiC contacts present several atractive material advantages for the semiconductor industry and especially for SiC processing procedures for avoiding stages such as high temperature contact annealing or SiC etching. Si films of 100 nm thickness have been grown using a MBE system after different cleaning procedures on n-type (0 0 0 1) Si face 8° off 4H-SiC substrates. Isotype (n–n) and an-isotype (p–n) devices were fabricated at both 500 and 900 °C using antimonium (Sb) or boron (B), respectively. X-ray diffraction analysis (XRD) and scanning electronic mircorscope (SEM) have been used to investigate the crystal composition and morphology of the deposited layers. The electrical mesurements were performed to determine the rectifiying contact characteristics and band offsets."
}
@article{tagkey2007CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "CO2 - ",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00329-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207003291",
key = "tagkey2007CO2"
}
@article{Raphael2007959,
title = "Applying the insight into superlattices and quantum wells for nanostructures: Low-dimensional structures and devices",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "959 - 1012",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.102",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002327",
author = "Raphael and Tsu",
keywords = "Supperlattice",
keywords = "Quantum wells and dots",
keywords = "Nanoelectronics",
abstract = "Semiconductor superlattices consisting of alternating layers of two semiconductors with different energy bands were conceived by Esaki and Tsu more than 37 years ago at the IBM Research. It was recognized that such structures would show negative differential conductance, the main device ingredient in amplifier and oscillator, called by us, the Bloch oscillator. Two patents were applied at the very beginning and issued. The concept, due to the availability of molecular beam epitaxy, MBE, particularly developed for GaAs injunction lasers, became reality in a few years, led to the wide spread of 2D systems, eventually led the way for the opening of nanoscience. I used this opportunity to tell the story how it all happened, as an example that progress in science and technology frequently depends on something quite obvious once became known."
}
@article{Kumar20071013,
title = "Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1013 - 1020",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002662",
author = "Sona P. Kumar and Anju Agrawal and Rishu Chaujar and Sneha Kabra and Mridula Gupta and R.S. Gupta",
keywords = "AlGaN/GaN HEMT",
keywords = "Small geometry",
keywords = "Short channel effects",
keywords = "Three-dimensional (3-D) modeling",
keywords = "Threshold voltage",
abstract = "A simple and accurate analytical model for the threshold voltage of AlGaN/GaN high electron mobility transistor (HEMT) is developed by solving three-dimensional (3-D) Poisson equation to investigate the short channel effects (SCEs) and the narrow width effects present simultaneously in a small geometry device. It has been demonstrated that the proposed model correctly predicts the potential and electric field distribution along the channel. In the proposed model, the effect of important parameters such as the thickness of the barrier layer and its doping on the threshold voltage has also been included. The model is, further, extended to find an expression for the threshold voltage in the sub-micrometer regime. The accuracy of the proposed analytical model is verified by comparing the model results with 3-D device simulations for different gate lengths and widths."
}
@article{Xue20071021,
title = "Design, fabrication, and preliminary characterization of a novel MEMS bionic vector hydrophone",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1021 - 1026",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002650",
author = "Chenyang Xue and Shang Chen and Wendong Zhang and Binzhen Zhang and Guojun Zhang and Hui Qiao",
keywords = "MEMS",
keywords = "Bionic",
keywords = "Vector hydrophone",
keywords = "Low frequency",
abstract = "According to the auditory principle of fish's lateral line organ, a novel microelectromechanical systems (MEMS) bionic vector hydrophone used for obtaining vector information of underwater sound field is introduced in this paper. It is desirable that the application of MEMS-based piezoresistive effect and bionics structure may improve the low-frequency sensitivity of the vector hydrophone as well as its miniaturization. The bionic structure consists of two parts: high-precision four-beam microstructure and rigid plastic cylinder which is fixed at the center of the microstructure. The piezoresistor located at the beam is simulated to the hair cell of lateral line and the rigid plastic cylinder is simulated to stereocilia. When the plastic cylinder is stimulated by sound, the piezoresistor transforms the resultant strain into a differential voltage output signal via the Wheatstone bridge circuit. Microfabrication technology has been employed for the fabrication of the microstructure and measurement results are given. The experiment results show that the receiving sensitivity of the hydrophone is −197.7 dB (0 dB=1 V/μPa). The novel hydrophone not only possesses satisfactory directional pattern as well as miniature structure, but also has good low-frequency characteristics, and satisfies the requirements for low-frequency acoustic measurement."
}
@article{YongSeo20071027,
title = "Analysis of the electrical characteristics of power LDMOSFETs having different design parameters under various temperature",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1027 - 1033",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.115",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700239X",
author = "Yong-Seo and Koo",
keywords = "LDMOSFET",
keywords = "Temperature characteristics",
keywords = "Thermal reliability",
abstract = "In this paper, we have investigated the electrical characteristics of power lateral double-diffused MOSFETs (LDMOSFETs) having different gate lengths (2.1–3 μm) and drift lengths (6.6–12.6 μm) in the temperature range 100–500 K. The results of this study indicate that gate length and drift region length have a great effect on electrical characteristics, but they have little effect on temperature dependence. The specific on-resistance and the off-state breakdown voltage increase with temperature. The result shows that the specific on-resistance increases exponentially with the exponent 2.2 and, by contrast, the off-state breakdown voltage increases linearly with a slope of 100 mV/K (drift region concentration of measured device: 2×1015 cm−3). As a result, Ron/BV, known for a figure of merit of power device, increases with temperature."
}
@article{Youm20071034,
title = "Effects of bottom electrode and environmental insulator on thermal distribution of edge contact-type PRAM cell",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1034 - 1037",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.120",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002418",
author = "Minsoo Youm and Yong Tae Kim and Man Young Sung",
keywords = "Ge2Sb2Te5",
keywords = "Phase change memory",
keywords = "Chalcogenide",
abstract = "Thermal characteristics of edge contact-type phase change random access memory cells have been investigated with different combinations of bottom electrode and insulator such as Ti and SiO2, Ti and AlN, and TiN and AlN. At the same melting temperature on the programmable point of Ge2Sb2Te5, we have determined heat flux for each combination: for the Ti and SiO2, the heat flux is 3.5×105 J/mm2 s, for the Ti and AlN, and the TiN and AlN, they are 1.7×106 and 1.9×104 J/mm2 s, respectively. These simulated results mean that the combination of TiN and AlN is the most effective for the fast response of phase changing from the amorphous to the crystalline and vice versa since the TiN has lower thermal conductivity than the Ti and the AlN has higher thermal conductivity than SiO2."
}
@article{Han20071038,
title = "Design and characterization of high-voltage NMOS and PMOS devices in standard 0.25 μm CMOS technology",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1038 - 1041",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001346",
author = "Xiaoliang Han and Chihao Xu",
keywords = "High-Voltage",
keywords = "NMOS",
keywords = "PMOS",
keywords = "CMOS",
keywords = "STI",
abstract = "This paper presents the design of high-voltage NMOS and PMOS devices with shallow trench isolation (STI) in standard 0.25 μm/5 V CMOS technology. Breakdown voltages of 20 V for n-channel device with a specific on resistance of 1.06 mΩ cm2 and −20 V for p-channel device with a specific on resistance of 2.83 mΩ cm2 have been achieved without any modification of existing standard CMOS process."
}
@article{Kim20071042,
title = "CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1042 - 1049",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002595",
author = "Chan-Kyung Kim and Jae-Goo Lee and Young-Hyun Jun and Chil-Gee Lee and Bai-Sun Kong",
keywords = "Bandgap reference",
keywords = "Temperature sensor",
keywords = "DRAM self-refresh control",
keywords = "Ring oscillator",
abstract = "This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area-efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80 nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 mm2 with under 1 μW power consumption for providing 0.7 °C effective resolution at 1 sample/s processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM."
}
@article{Dutta20071050,
title = "Compact small signal modeling and PSO-based input matching of a packaged CMOS LNA in subthreshold region",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1050 - 1056",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002625",
author = "Ashudeb Dutta and Kaushik Dasgupta and T.K. Bhattacharyya",
keywords = "LNA",
keywords = "Subthreshold",
keywords = "Q-based matching",
keywords = "PSO",
abstract = "The paper reports a small-signal model of a cascaded, packaged, CMOS low noise amplifier (LNA) operating in subthreshold region. The proposed compact model has been verified through CADENCE simulations in standard 0.18 μm process. This model also accounts for the dominating role of some of the device parasitic capacitances in determining the input impedance of the amplifier. The closed form expression of the input impedance obtained-from this model is then used for synthesizing the input matching network of the common-source LNA using standard Q-based technique. It has been noted that the conventional Q-based matching approach does not provide symmetric matching characteristics (S11) about the center frequency (900 MHz). To overcome this problem, a swarm intelligence-based evolutionary technique has been adopted for synthesis of the matching network. Symmetric nature is obtained both in terms of S11 as well as the real/imaginary parts of the input impedance."
}
@article{Mazzanti20071057,
title = "CMOS balanced regenerative frequency dividers for wide-band quadrature LO generation",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1057 - 1063",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.087",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002480",
author = "Andrea Mazzanti and L. Larcher and Francesco Svelto",
keywords = "CMOS RF integrated circuits",
keywords = "Injection locking",
keywords = "Frequency dividers",
keywords = "Multi-standard front-ends",
keywords = "Local oscillators",
keywords = "Quadrature generation",
abstract = "CMOS regenerative frequency dividers, based on a fully balanced Gilbert cell, are analyzed in this paper for quadrature local oscillator (LO) signal generation. Driven in opposite phase by double frequency signals, they provide quadrature waveforms while simultaneously driving large mixers LO input capacitances, thereby avoiding power hungry buffers typically required. Experimental results, carried out on 0.18 μm CMOS prototypes, show 68% bandwidth around 2 GHz center frequency, with a quadrature accuracy better than 1°, making them suitable for multi-standard wireless receivers. To keep the output amplitude constant while simultaneously minimizing the average power consumption, a digital calibration loop regulates each divider biasing current."
}
@article{Bedeschi20071064,
title = "Staircase-down SET programming approach for phase-change memories",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1064 - 1069",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.121",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002492",
author = "Ferdinando Bedeschi and Chiara Boffino and Edoardo Bonizzoni and Claudio Resta and Guido Torelli",
keywords = "Phase-change memories",
keywords = "Non-volatile memories",
keywords = "Programming technique",
abstract = "This paper presents a staircase-down SET programming technique for phase-change memories (PCMs). The proposed programming approach allows compensating for spreads in cell physical parameters and obtaining adequately narrow cell distributions, which results in improved read margin. The cell programming curve is experimentally evaluated and discussed. The effectiveness of the proposed technique is demonstrated by comparing cell distributions obtained on an 8-Mb bipolar junction transistor (BJT)-selected PCM demonstrator by means of a conventional SET box pulse and a staircase-down SET pulse, respectively."
}
@article{Chi20071070,
title = "Low power high data rate wireless endoscopy transceiver",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1070 - 1081",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.118",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002583",
author = "Baoyong Chi and Jinke Yao and Shuguang Han and Xiang Xie and Guolin Li and Zhihua Wang",
keywords = "Wireless transceiver",
keywords = "RF",
keywords = "CMOS",
keywords = "Analog integrated circuit",
keywords = "AGC",
keywords = "ASK",
keywords = "Modulator/demodulator",
keywords = "Endoscopy capsule",
keywords = "Low power",
abstract = "A low power high data rate wireless endoscopy transceiver is presented. Transceiver architecture, circuit topologies and design trade-offs have been considered carefully to satisfy the tight requirements of the medical endoscopy capsule: lower power consumption, high integration degree and high data rate. The prototype, implemented in 0.25 μm CMOS, integrates a super-heterodyne receiver and a super-heterodyne transmitter on a single chip together with an integrated RF local oscillator and LO buffers. The digital modulation and demodulation is also implemented in analog field and no data converters are needed for the whole endoscopy capsule. The measured sensitivity of the receiver is about −70 dBm with a data rate 256 kbps, and the measured output power of the transmitter could achieve −23 dBm with a data rate 1 Mbps. The transceiver operates from a power supply of 2.5 V, while only consuming 15 mW in receiver (RX) mode and 14 mW in transmitter (TX) mode."
}
@article{Romero20071082,
title = "An operational amplifier model for evaluating test strategies at behavioural level",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1082 - 1094",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002649",
author = "Eduardo Romero and Gabriela Peretti and Carlos Marqués",
keywords = "Behavioural analogue modelling",
keywords = "Operational amplifiers",
keywords = "Fault simulation",
keywords = "Testing",
abstract = "This paper proposes a new operational amplifier model for evaluating test strategies at behavioural level. Major modifications on a previously reported model for improving its performance and for allowing reliable fault simulations are presented here. The new model presents a set of very appealing characteristics for behavioural-level fault injection and simulation.
The matching between the behavioural-level model and a transistor-level one is evaluated for validating the model. We suggest the use of the model early in the design process, when the schematic of the circuit is not available for the test engineer and only the specifications are given. The model is also useful for evaluating different test alternatives for commercial operational amplifiers or standard cells designed by others vendors. The paper addresses two application examples and shows the usefulness of the model for evaluating test strategies when only the specifications of the circuit are available."
}
@article{Satagopan20071095,
title = "Automated energy calculation and estimation for delay-insensitive digital circuits",
journal = "Microelectronics Journal",
volume = "38",
number = "10–11",
pages = "1095 - 1107",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.08.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002637",
author = "Venkat Satagopan and Bonita Bhaskaran and Anshul Singh and Scott C. Smith",
keywords = "Asynchronous circuits",
keywords = "Energy",
keywords = "Power",
keywords = "Transistor-level simulation",
keywords = "VHDL",
abstract = "With increasingly smaller feature sizes and higher on-chip densities, the power dissipation of VLSI systems has become a primary concern for designers. This paper first describes a procedure to simulate a transistor-level design using a VHDL testbench, and then presents a fast and efficient energy estimation approach for delay-insensitive (DI) systems, based on gate-level switching. Specifically, the VHDL testbench reads the transistor-level design's outputs and supplies the inputs accordingly, also allowing for automatic checking of functional correctness. This type of transistor-level simulation is absolutely necessary for asynchronous circuits because the inputs change relative to handshaking signals, which are not periodic, instead of changing relative to a periodic clock pulse, as do synchronous systems. The method further supports automated calculation of power and energy metrics. The energy estimation approach produces results three orders of magnitude faster than transistor-level simulation, and has been automated and works with standard industrial design tool suites, such as Mentor Graphics and Synopsys.
Both methods are applied to the NULL Convention Logic (NCL) DI paradigm, and are first demonstrated using a simple NCL sequencer, and then tested on a number of different NCL 4-bit×4-bit unsigned multiplier architectures. Energy per operation is automatically calculated for both methods, using an exhaustive testbench to simulate all input combinations and to check for functional correctness. The results show that both methods produce the desired output for all circuits, and that the gate-level switching approach developed herein produces results more than 1000 times as fast as transistor-level simulation, that fall within the range obtained by two different industry-standard transistor-level simulators. Hence, the developed energy estimation method is extremely useful for quickly determining how architecture changes affect energy usage."
}
@article{tagkey2007IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "IFC - ",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00289-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002893",
key = "tagkey2007IFC"
}
@article{AlHarthi2007817,
title = "Features of a tunnel diode oscillator at different temperatures",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "817 - 822",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.085",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002388",
author = "S. Al-Harthi and A. Sellai",
keywords = "Tunneling diode",
keywords = "Oscillator",
keywords = "I–V–T characteristics",
keywords = "Spice simulation",
abstract = "Current–voltage measurements were performed on a tunnel diode (TD) and the basic features of the I–V characteristics were analyzed in the temperature range 100–300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region."
}
@article{Sutikno2007823,
title = "A systematic dry etching process for profile control of quantum dots and nanoconstrictions",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "823 - 827",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.081",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002406",
author = "Madnarski Sutikno and Uda Hashim and Zul Azhar Zahid Jamal",
keywords = "Nanostructure dimension",
keywords = "Dry etch process",
abstract = "In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. Varieties of etch times and oxygen flow rates in ranges 75–88 s and 20–50 sccm, respectively, were devised to fabricate optimum dimension of nanostructure. As a result, as etch time increased, lateral etch rate of silicon quantum dot, source and drain and also the nanostructure etch depth increased. However, high roughness of etched silicon surface profile led to concave surfaces of source and drain. In this research, no significant relation between quantum dot diameters and oxygen flow rates was found. There was a reflection point, fixed data dot of 26 sccm, of the decreasing and increasing lines of relation between nanostructure depth of etched silicon and nanostructure gradient with the O2 flow rate."
}
@article{Dai2007828,
title = "Simulation and fabrication of HF microelectromechanical bandpass filter",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "828 - 833",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.070",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002376",
author = "Ching-Liang Dai and Ming-Chao Chiang and Ming Wei Chang",
keywords = "Micromechanical filter",
keywords = "CMOS",
keywords = "Microactuator",
abstract = "A high-frequency (HF) micromechanical bandpass filter fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The area of the filter is about 150×200 μm2. The filter is composed of two resonators, which are joined by a coupling beam. Each resonator contains a membrane, four supported beams and two fixed electrodes, and the membrane is supported by four supported beams. The filter requires a post-process to etch the sacrificial layer, and to release the suspended structures. The post-process needs only one wet etching to etch silicon dioxide layer. The filter contains a sensing part and a driving part. When applying a driving voltage to the driving part, the sensing part generates a change in capacitance. The capacitance variation of the sensing part is converted into the output voltage by a sensing circuitry. Experiments show that the filter has a center frequency of about 39.6 MHz and a bandwidth of 330 kHz."
}
@article{Ahmed2007834,
title = "Fabrication and effect of the dielectric permittivity on the ideality factor of MEH-PPV Schottky diodes doped with electron acceptor fluorescent dyes",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "834 - 837",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.068",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700242X",
author = "Fatima E. Ahmed and O.A. Yassin",
keywords = "Molecular electronics",
keywords = "Schottky diodes",
keywords = "Ideality factor",
keywords = "Charge transport",
abstract = "Polymeric Schottky diodes have been prepared using poly[2-methyl-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) conducting polymers. The I–V characteristics of these diodes are interpreted in terms of thermoionic emission (TIE) conduction process. Upon blending the polymer with Nile blue (NB) dye the conduction shows a cross-over from space-charge limited conduction (SCLC) to TIE at biasing voltages larger than 4 V. Disappearance of SCLC is seen in Rhodamine B (RhB)-based diodes and the conduction is interpreted in terms of the TIE process. Inclusion of the dielectric permittivity of the polymer/dye blends in interpreting the I–V characteristics of diodes is found to be crucial. A significant reduction of the ideality factor (n) from 6 to 1.8 is determined when MEH-PPV is mixed with NB or Rhodamine fluorescent dyes."
}
@article{Wang2007838,
title = "Characteristics of high Al content AlxGa1−xN grown by metalorganic chemical vapor deposition",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "838 - 841",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.090",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002479",
author = "Xiaoyan Wang and Xiaoliang Wang and Guoxin Hu and Baozhu Wang and Zhiyong Ma and Hongling Xiao and Cuimei Wang and Junxue Ran and Jianping Li",
keywords = "AlxGa1−xN",
keywords = "MOCVD",
keywords = "High Al content",
keywords = "Photodetector",
abstract = "The epitaxial growth of AlxGa1−xN film with high Al content by metalorganic chemical vapor deposition (MOCVD) has been accomplished. The resulting Al content was determined to be 54% by high resolution X-ray diffraction (HRXRD) and Vegard's law. The full width at half maximum (FWHM) of the AlGaN (0002) HRXRD rocking curve was about 597 arcsec. Atomic force microscopy (AFM) image showed a relatively rough surface with grain-like islands, mainly coming from the low surface mobility of adsorbed Al-species. From transmittance measurement, the cut-off wavelength was around 280 nm and Fabry–Perot fringes were clearly visible in the transmission region. Cathodoluminescence (CL) measurement indicated that there existed a uniformity in the growth direction and a non-uniformity in the lateral direction."
}
@article{Lee2007842,
title = "Iterative optimization of tail breaking force of 1 mil wire thermosonic ball bonding processes and the influence of plasma cleaning",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "842 - 847",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.095",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002431",
author = "J. Lee and M. Mayer and Y. Zhou and S.J. Hong",
keywords = "Wire bonding",
keywords = "Thermosonic",
keywords = "Tail breaking force",
keywords = "Leadframe",
keywords = "Tensile test",
abstract = "An online tail breaking force measurement method is developed with a proximity sensor between wire clamp and horn. The wire under the tensile load measures about 1.5 cm extending from the bond location to the wire clamp. To increase the sensitivity, the bondhead speed is reduced to 2 mm/s during breaking the tail bond. It takes roughly 10 ms to break the tail bond. The force resolution of the method is estimated to be better than 5.2 mN. An automatic wire bonder used to continuously bond up to 80-wire loops while recording the on-line proximity signals. All wires are directed perpendicular to the ultrasound direction. The tail breaking force for each bond is evaluated from the signal and shown automatically on the bonder within 2 min after bonding.
Results are obtained for a typical Au wire and a typical Cu wire bonding process. Both wires are 25 mm in diameter and bonded on Ag plated diepads of standard leadframes at 220 °C. An average Cu tail breaking force of higher than 50 mN is obtained if the leadframe is plasma cleaned before the bonding with 100% Ar for 5 min. This result is comparable to that obtained with Au wire. The standard deviation of the Cu tail breaking force is about twice that obtained with Au wire. The tail breaking force depends on the bonding parameters, metallization variation, and cleanliness of the bond pad. The cleanliness of the bonding pad is more important with Cu wire than with Au wire."
}
@article{Gangwani2007848,
title = "A compact C–V model for 120 nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "848 - 854",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.117",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002443",
author = "Parvesh Gangwani and Sujata Pandey and Subhasis Haldar and Mridula Gupta and R.S. Gupta",
keywords = "Heterostructure",
keywords = "AlGaN/GaN MODFET",
keywords = "Drain current",
keywords = "Transconductance",
keywords = "Cutoff frequency",
abstract = "We present a theoretical model of AlGaN/GaN high electron mobility transistor (HEMT) that includes the effect of spontaneous and piezoelectric polarization. Present model also incorporates the effect of mole fraction dependent mobility, saturation velocity and the accurate 2-DEG density in HEMT as a function of gate voltage in subthreshold, linear and saturation regimes. This paper reports a detailed 2-D analysis of capacitance–voltage (C–V) characteristics. The contribution of various capacitances including fringing field capacitance on the performance of the device is also shown. The model further predicts the transconductance, drain conductance and frequency of operation and is in close proximity with the experimental data which confirms the validity of proposed model."
}
@article{Fang2007855,
title = "Surface micromachined RF MEMS variable capacitor",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "855 - 859",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.079",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002455",
author = "Dong-Ming Fang and Shi Fu and Ying Cao and Yong Zhou and Xiao-Lin Zhao",
keywords = "Variable capacitor",
keywords = "Pull-in voltage",
keywords = "RF MEMS",
keywords = "Quality factor",
abstract = "We used simple microelectromechanical systems (MEMS) technology to fabricate low-voltage-controlled variable capacitors with high-quality factor. The surface profile of the variable capacitor at different values of applied voltage is measured using WYKO NT1100 optical surface profiler. The pull-in voltage of the variable capacitor was below 15 V. The capacitance and quality factor at 1 GHz are 0.792 and 51.6 pF. The pull-in voltage is 13.5 V, the tuning ratio of the capacitor is more than 1.31:1."
}
@article{BenFredj2007860,
title = "Influence of the composition fluctuation and the disorder on the bowing band gap in semiconductor materials",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "860 - 870",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001383",
author = "A. Ben Fredj and M. Debbichi and M. Said",
keywords = "Bowing parameter",
keywords = "Band gap",
keywords = "Compositional disorder",
keywords = "Virtual crystal approximation",
abstract = "A pseudopotentiel formalism coupled with the virtual crystal approximation (VCA) is applied to study the influence of the composition on the AxB1−xC ternary band gap in zinc blende phase. Our theoretical results show that the band gaps are affected by the compositional disorder. We further predict that the bowing parameter of the II–VI, III–V and IV–IV alloys (i) has a close connection with the difference between the lattice constants Δa; (ii) does not vary linearly with the electronegativities difference ΔXAB as in the case of AIBIIC2VI chalcopyrite-structure alloys and (iii) does not scale both with ΔXAB and with the atomic sizes variation ΔRAB."
}
@article{Barkana2007871,
title = "A model for the resonant tunneling semiconductor-controlled rectifier",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "871 - 876",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001371",
author = "B.D. Barkana and H.H. Erkaya",
keywords = "Semiconductor devices",
keywords = "Resonant tunneling devices",
keywords = "SCRs",
abstract = "A new switch called a resonant-tunneling-semiconductor-controlled rectifier (RT-SCR) has been proposed. A two-transistor model is used for the device. One of the transistors in the two-transistor model is assumed to be a resonant tunneling transistor (RTT), while the other transistor is taken to be a bipolar transistor. The current–voltage relationships of the device have been numerically obtained and compared with the traditional thyristor characteristics. The new device requires smaller turn-on gate voltage than a comparable traditional device for the same gate current. This indicates that in comparison with the traditional thyristor, a smaller control current may be used to turn on the device at a particular voltage."
}
@article{Tyagi2007877,
title = "An analytical two-dimensional model for AlGaN/GaN HEMT with polarization effects for high power applications",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "877 - 883",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700136X",
author = "Rajesh K. Tyagi and Anil Ahlawat and Manoj Pandey and Sujata Pandey",
keywords = "AlGaN/GaN HEMTs",
keywords = "Polarization",
keywords = "Two-dimensional model",
keywords = "Transconductance",
keywords = "Cut off frequency",
abstract = "An analytical two-dimensional model for AlGaN/GaN modulation-doped field effect transistor is developed. The spontaneous and piezoelectric polarization effects have been included. Two-dimensional analysis has been carried out in the high field region. The output characteristics, device transconductance and cut off frequency for 120 nm gate length device are obtained. Peak transconductance of 320 mS/mm and a cut off frequency of 120 GHz has been obtained. The results show excellent agreement when compared with experimental data thereby proving the validity of the model."
}
@article{Zaouk2007884,
title = "X-ray diffraction studies of electrostatic sprayed SnO2:F films",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "884 - 887",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.072",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001310",
author = "D. Zaouk and R. al Asmar and J. Podlecki and Y. Zaatar and A. Khoury and A. Foucaran",
keywords = "SnO2:F",
keywords = "Electrostatic spray pyrolysis",
keywords = "Structural properties",
keywords = "Electrical measurements",
abstract = "Fluorine-doped tin oxide films were deposited by electrostatic spray pyrolysis technique (ESP), on 1 cm×1 cm Corning 7059 substrates. The structural and electrical properties of the deposited films with different doping levels are studied. Relative variations in the structural properties were explained on the basis of structural factor calculations. The results show that the incorporation of fluorine atoms took place only at substitutional sites leading to an increase in free carrier concentration."
}
@article{GwiySang2007888,
title = "Characteristics of SiCN microstructures for harsh environment and high-power MEMS applications",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "888 - 893",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.078",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001292",
author = "Gwiy-Sang and Chung",
keywords = "SiCN microstructure",
keywords = "Harsh environment",
keywords = "MEMS",
abstract = "This paper describes a novel processing technique for the fabrication of polymer-derived silicone carbonitride (SiCN) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was crosslinked using hot isostatic pressure at 400 °C and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over 1400 °C were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics including shear strength (15.2 N), insulation resistance (2.163×1014 Ω cm), and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers."
}
@article{Boubaker2007894,
title = "A new SIMPLORER model for single-electron transistors",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "894 - 899",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001231",
author = "A. Boubaker and Na. Sghaier and M. Troudi and A. Kalboussi and N. Baboux and A. Souifi",
keywords = "Single-electron transistor",
keywords = "Coulomb blockade oscillations",
keywords = "Quantum effects",
keywords = "Orthodox theory",
keywords = "SIMPLORER",
abstract = "In the first part of this paper, we present simulations of single-electron transistor (SET) output characteristic using Maple. Typical SET I–V characteristics and charge energies curves are presented by developing Maple programs. In the second part of this work, we develop a new model without considering quantum effects using the superposition theorem, transfer function and Laplace transformer. Finally, we propose a new bloc using SIMPLORER 7.0 simulator to modulate quantum effects in the SET island. This model is based on a parallel analog–digital converter."
}
@article{Rostami2007900,
title = "An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN–AlGaN–AlN quantum wells: Towards all-optical devices and systems",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "900 - 904",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.071",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001309",
author = "A. Rostami and H. Baghban and H. Rasooli Saghai",
keywords = "Asymmetric quantum well",
keywords = "Higher order nonlinearity",
keywords = "Strained structure",
keywords = "Optical susceptibility",
abstract = "In this paper an asymmetric structure for enhancement of second-order nonlinear optical susceptibility in the strained asymmetric GaN–AlGaN–AlN quantum well (QW) is proposed. In this structure, the strain-induced spontaneous and piezoelectric effects have been taken into account, and the second-order optical susceptibility of the δ-doped step QW structure is analyzed by considering the Shrödinger–Poisson self-consistent for different Al mole fraction x, step position, and pump photon energy hω. The magnitude of the second-order susceptibility of the simulated results for the proposed structure show an enhancement more than 400 times compared traditional strained QWs. Our simulations show that with increasing well width in the case of constant step width, peak of the second-order susceptibility is increased as well as resonant wavelength is decreased. Also, it is shown that for a given well and step widths there is an optimum mole fraction corresponding to maximum second-order susceptibility. Finally in the case of constant well width and mole fraction of the step, with increasing step width the second-order susceptibility is decreased."
}
@article{Lam2007905,
title = "Fractal analysis of InGaN self-assemble quantum dots grown by MOCVD",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "905 - 909",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.07.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001280",
author = "K.T. Lam and L.W. Ji",
keywords = "Fractal analysis",
keywords = "Quantum dots",
keywords = "Atomic force microscopy",
abstract = "Recently, it has been shown that nitride nanostructures can be self-assembled using growth interruption during the metal-organic chemical vapor deposition (MOCVD) growth. In this work, strain-induced InGaN-GaN self-assembled quantum dot (SAQD) samples were grown by MOCVD. A fractal dimension processing has been applied to characterize the surface roughness of uncapped InGaN-GaN SAQDs. The fractal dimension D can be used to describe the influence of different annealed conditions on surface characterization. Fractal analysis reveals the surface roughness of nanostructure surfaces is decreased after the annealing process. It can be seen that a smoother surface was obtained under an annealing temperature at 800 °C, and it implies that the surface roughness of this case is minimum in all tests. The results of this paper also described a mathematical modeling method for the observation of the fractal dimension in semiconductor nanostructure films."
}
@article{Wang2007910,
title = "Investigation of Zr–N thin films for use as diffusion barrier in Cu metallization",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "910 - 914",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001206",
author = "Ying Wang and Fei Cao and Minghui Ding and Dawei Yang",
keywords = "Diffusion barrier",
keywords = "Cu metallization",
keywords = "Zr–N",
keywords = "Semiconductor",
abstract = "Zr–N thin films as a barrier in Cu/Si contact were investigated. The Cu/Zr–N/Si specimens were prepared and annealed at temperatures up to 700 °C in N2 ambient for an hour. Characterization of phase composition and crystallite structure of the barriers was performed by XRD, the film morphology was examined using atomic force microscopy (AFM), and the composition profiles of the as-deposited and annealed samples of Cu/Zr–N/Si were identified by Auger electron spectroscopy (AES). It is evident that the Zr–N film structure is very sensitive to the deposition conditions. Cu/Zr–N/Si contact systems showed better thermal stability so that the Cu3Si phase could not be detected. It is indicated from the comparison analysis results that the Zr–N film showed better thermal stability with increasing N2 flow ratio and/or negative substrate bias."
}
@article{Guerino2007915,
title = "The influence of nitrogen and fluorine on the dielectric constant of hydrogenated amorphous carbon (a-C:H) films",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "915 - 918",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000857",
author = "M. Guerino and M. Massi and R.D. Mansano",
keywords = "Amorphous carbon",
keywords = "Doping",
keywords = "Dielectric constant",
keywords = "RBS",
keywords = "FTIR spectroscopy",
abstract = "The possibility to use diamond-like carbon (DLC) film as dielectric in CIs has been motivating the study of this material. In this work, an analysis focused on the influence of the nitrogen and fluorine on the dielectric constant of the a-C:H films deposited by a reactive RF magnetron sputtering with a graphite target is reported. Different mixtures (CH4/N2 and CH4/CF4) were used in the depositions. The working pressure process was 5 mTorr and the RF power was 150 W. RBS and FTIR spectra were used to investigate the chemical composition and chemical bonding structure of the films, respectively. As verified in this study, the effect caused by nitrogen and fluorine on the chemical bonding structure of the a-C:H film have a fundamental role on the dielectric constant of this material."
}
@article{Liu2007919,
title = "Organic thin film transistors with double insulator layers",
journal = "Microelectronics Journal",
volume = "38",
number = "8–9",
pages = "919 - 922",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000833",
author = "X. Liu and Y. Bai and L. Chen and F.X. Wei and X.B. Zhang and X.Y. Jiang and Zh.L. Zhang",
keywords = "Organic thin film transistor",
keywords = "PMMA",
keywords = "Mobility",
keywords = "On/off ratio",
abstract = "We have investigated a double-layer structured gate dielectric for the organic thin films transistor (OTFT) with the purpose of improving the performance of the SiO2 gate insulator. A 50 nm PMMA layer was coated on top of the SiO2 gate insulator as organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layers is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters such as carrier mobility and on/off ratio by field effect measurement have been calculated. OTFT based on highly doped Si substrate with a field-effect mobility of 0.004 cm2/V s and on/off ratio of 104 have been obtained."
}
@article{tagkey2007IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "IFC - ",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00251-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207002510",
key = "tagkey2007IFC"
}
@article{Chang2007657,
title = "Low-temperature process in growing carbon nanotube",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "657 - 662",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700122X",
author = "Shang-Chou Chang and Tien-Chai Lin and Chen-Yu Pai",
keywords = "Low temperature",
keywords = "Carbon nanotube",
abstract = "Nickel particles, converted from film by microwave hydrogen plasma at a low temperature of 250 °C, were used as the catalyst for growing carbon nanotubes (CNTs). Low-temperature process is desirable for CNT application in flat panel display industry. We found that the processing pressure and microwave power can greatly influence the nickel particle size and density. The processing pressure during pretreatment affects the CNT to be grown or not at all. The microwave power affects the particle size of the catalyst and the diameter of the grown CNT. It was also found that after pretreatment, the diameter of the grown CNT is proportional to the catalyst particle size. The threshold electric field of CNT field emission was found reduced as the diameter of the CNT became smaller."
}
@article{Xia2007663,
title = "Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "663 - 666",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001218",
author = "Congxin Xia and Fengchun Jiang and Shuyi Wei and Xu Zhao",
keywords = "Quantum dot",
keywords = "Hydrogenic impurity",
keywords = "Donor binding energy",
abstract = "Within the framework of effective-mass approximation, we have calculated the binding energy of a hydrogenic donor impurity in a zinc-blende (ZB) GaN/AlGaN cylindrical quantum dot (QD) using a variational procedure. It is found that the donor binding energy is highly dependent on the impurity position and QD size. The donor binding energy E b is largest when the impurity is located at the center of the QD. The donor binding energy is decreased when the QD height (radius) is increased."
}
@article{Izaki2007667,
title = "Thermal properties and thermoelectric microdevices with InN thin films",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "667 - 671",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001152",
author = "Ryohei Izaki and Masayuki Hoshino and Tadashi Yaginuma and Nakaba Kaiwa and Shigeo Yamaguchi and Atsushi Yamamoto",
keywords = "Thermal diffusivity",
keywords = "Thermoelectric",
keywords = "Thermopower",
keywords = "InN",
keywords = "Thin film",
abstract = "We report the load characteristics of miniature thermoelectric power devices using InN thin films prepared by reactive radio-frequency (RF) sputtering. The devices are composed of 25-pair and 12-pair InN-chromel films on a SiO2 glass substrate. The open output voltage and the maximum output power were 0.11 V and 2.9 × 10 - 8 W at Δ T = 262 K for the 25-pair device, respectively, and 0.05 V and 1.3 × 10 - 8 W at Δ T = 234 K for the 12-pair device, respectively. The open output voltage and the maximum output power were proportional to ( Δ T ) n ( n = 1 and 2, respectively)."
}
@article{Dai2007672,
title = "Microelectromechanical resonator manufactured using CMOS-MEMS technique",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "672 - 677",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001140",
author = "Ching-Liang Dai and Cheng-Hsiung Kuo and Ming-Chao Chiang",
keywords = "Micromechanical resonator",
keywords = "CMOS",
keywords = "Microactuator",
abstract = "The fabrication of a microelectromechanical resonator using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and a post-process has been implemented. The resonator requires only one wet etching post-process. The suspended structures in the resonator consist of a membrane and four beams. The post-process utilizes an etchant to etch the sacrificial layer, and to release the suspended structures. Easy execution and low cost are the advantages of the post-process. The resonator comprises a driving part and a sensing part. The sensing part produces a change in capacitance when applying a driving voltage to the driving part in the resonator. A circuitry is used to convert the capacitance variation of the sensing part into the voltage output. Experimental results show that the resonant frequency of the resonator is about 39.5 MHz and the quality factor is 806."
}
@article{Arena2007678,
title = "Electrical characterization of solid-state heterojunctions between PEDOT:PSS and an anionic polyelectrolyte",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "678 - 681",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001139",
author = "A. Arena and N. Donato and G. Saitta",
keywords = "PEDOT",
keywords = "Anionic polyelectrolyte",
keywords = "Organic heterojunctions",
abstract = "Stable organic heterojunctions are developed by deposition of the anionic polyelectrolyte poly(4-lithium styrenesulfonic acid) (LiPSSA) on the top of poly(3,4-ethylendioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) films. The electrical response of the heterojunctions to triangular voltage pulses in the range between −5 and +5 V is characterized by hysteresis phenomena, observed for hundreds of cycles with low distortions, at scan rates between 1 and 100 mV/s. The hysteresis is ascribed to the occurrence of redox transitions, evidenced by the presence of well-defined peaks in the current–voltage characteristics. The electrical behaviour of the PEDOT:PSS/LiPSSA devices is found to be mainly capacitive, and show humidity-sensitive functionality, demonstrated by the gradual and reversible increase of the area subtended by the J−V cycles as the relative humidity increases."
}
@article{Pakhomov2007682,
title = "Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "682 - 685",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001127",
author = "Georgy L. Pakhomov and Evgeny S. Leonov and Alexander Yu. Klimov",
keywords = "Heterostructures",
keywords = "Phthalocyanines",
keywords = "Photoconductivity",
abstract = "Hybrid organic-on-inorganic heterostructures employing phthalocyanine molecular semiconductor and doped silicon were fabricated using standard microelectronic processes. Current-vs-voltage characteristics display rectifying behavior of such heterostructures, which becomes more pronounced if n-type phthalocyanine layer is utilized. Competitive influence of phthalocyanine/metal and phthalocyanine/p-Si interface on electrical transport in the devices is discussed. Heterostructures with lead phthalocyanine layer show photoconductive properties in the NIR domain when illuminated through p-Si side."
}
@article{Wu2007686,
title = "Highly efficient green top-emitting organic light-emitting devices with metal electrode structure",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "686 - 689",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001115",
author = "Zhijun Wu and Hengqun Guo and Jiaxian Wang",
keywords = "TEOLED",
keywords = "Microcavity",
keywords = "External quantum efficiency",
keywords = "Emission enhancement factor",
abstract = "In this work, the electrical and optical characteristics of top-emitting organic light-emitting device (TEOLED) using metal Ag as anode with different thicknesses have been investigated. The emission peak of fabricated TEOLED is 512 nm for a full-width at half-maximum (FWHM) of 48 nm in forward direction. The TEOLED turns on at 3 V with luminance of 2.38 cd/m2 and reaches 16,300 cd/m2 at 9 V. The maximum of current efficiency is 5.2 cd/A at 7 V, corresponding to the external quantum efficiency of 1.72%."
}
@article{Chung2007690,
title = "Characteristics of a micromachined piezovalve combined with a multilayer ceramic actuator",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "690 - 694",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001103",
author = "Gwiy-Sang Chung and Ki-Bong Han",
keywords = "Microvalve",
keywords = "Multilayer ceramic actuator",
keywords = "Piezoelectric",
keywords = "Buckling effect",
keywords = "Flow rate",
abstract = "This paper describes the design, fabrication and characteristics of a micromachined piezoelectric valve utilizing a multilayer ceramic actuator (MCA). The micromachined MCA valve, which uses a buckling effect, consists of three separate structures: the MCA, the valve actuator die and the seat die. The valve seat die with six trenches was made, and the actuator die, which is driven by the MCA under optimized conditions, was also fabricated. After Si wafer direct bonding between the seat die and the actuator die, the MCA was also anodically bonded to the seat/actuator die structure. A polydimethylsiloxane (PDMS) sealing pad was fabricated to minimize the leak rate. Finally, the PDMS sealing pad was also bonded to the seat die and the stainless steel package. The MCA valve shows a flow rate of 9.13 sccm at an applied DC voltage of 100 V with a 50% duty cycle and a maximum non-linearity of 2.24% FS. Therefore, the fabricated MCA valve is suitable for a variety of flow control equipment, as a medical bio-system and in the automobile industry."
}
@article{Yin2007695,
title = "A chalcogenide-based device with potential for multi-state storage",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "695 - 699",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001097",
author = "You Yin and Hayato Sone and Sumio Hosaka",
keywords = "Chalcogenide",
keywords = "Memory",
keywords = "Multi-state",
abstract = "We have investigated electrical properties of a chalcogenide-based device with naturally oxidized Al electrodes. Intermediate-resistance (IR) states exhibited by current–voltage (I–V) characteristics, dynamic resistance change as a function of pulse height and decay behavior from a low-resistance state of such a device make multi-state storage feasible. These IR states could be induced by electrical pulses and stable in a period. Device resistances of such a series of states might be related to the number of dendrite filaments across the chalcogenide channel."
}
@article{Liu2007700,
title = "Interaction of CdSe/ZnS quantum dots: Among themselves and with matrices",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "700 - 705",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207001085",
author = "K. Liu and T.A. Schmedake and K. Daneshvar and R. Tsu",
keywords = "CdSe quantum dots",
keywords = "Photoluminescence",
keywords = "Shift",
keywords = "Stability of silica spheres",
keywords = "Photonic crystals",
abstract = "Photoluminescence (PL) of CdSe/ZnS quantum dots (QDs) deposited on Si, fused silica, Au film, shows red-shift; and blue-shift whenever two peaks are present, particularly on silica nanospheres. The red-shift with increasing density of QDs is attributed to interaction between QDs with PL emerging from the lower bonding state, and the second peak is attributed to molecular complexes on the surface of QD interacting with its surrounding matrices. The second peak is too weak to be detected on Si wafer with native oxide. The couplings between QD/QD and QDs/silica spheres via the molecular complexes are explained with a simple model. We also demonstrate that the band-gap of photonic crystals consisting of silica spheres can be stabilized by dehydration, annealing at high temperatures up to 1000 °C."
}
@article{Sagahyroon2007706,
title = "Using SAT-based techniques in power estimation",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "706 - 715",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000948",
author = "Assim Sagahyroon and Fadi A. Aloul",
keywords = "CMOS circuits",
keywords = "Power estimation",
keywords = "Optimization algorithms",
keywords = "Integer linear programming",
keywords = "Boolean satisfiability",
abstract = "Recent algorithmic advances in Boolean satisfiability (SAT), along with highly efficient solver implementations, have enabled the successful deployment of SAT technology in a wide range of applications domains, and particularly in electronic design automation (EDA). SAT is increasingly being used as the underlying model for a number of applications in EDA. This paper describes how to formulate two problems in power estimation of CMOS combinational circuits as SAT problems or 0–1 integer linear programming (ILP). In these circuits, it was proven that maximizing dissipation is equivalent to maximizing gate output activity, appropriately weighted to account for differing load capacitances. The first problem in this work deals with identifying an input vector pair that maximizes the weighted circuit activity. In the second application we attempt to find an estimate for the maximum power-up current in circuits where power cut-off or gating techniques are used to reduce leakage current. Both problems were successfully formulated as SAT problems. SAT-Based and generic Integer Linear Programming (ILP) solvers are then used to find a solution. The experimental results obtained on a large number of benchmark circuits provide promising evidence that the proposed complete approach is both viable and useful and outperforms the random approach."
}
@article{Wang2007716,
title = "An 80 MHz PLL with 72.7 ps peak-to-peak jitter",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "716 - 721",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000778",
author = "Chua-Chin Wang and Gang-Neng Sung and Jian-Ming Huang and Li-Pin Lin",
keywords = "Phase-locked loops",
keywords = "Jitter",
keywords = "Supply noise",
keywords = "Regulator",
abstract = "This paper presents a design of a 72.7 ps peak-to-peak (p2p) jitter, 80 MHz, phase-locked loop (PLL) circuit for digital video broadcasting over terrestrial (DVB-T) receivers. A step-down voltage regulator is utilized to suppress the coupled supply noise. A zero offset charge pump is employed to eliminate the static phase offset caused by the charge offset when the PLL is in lock. The measurement results on silicon using the TSMC (Taiwan Semiconductor Manufacturing Company) 0.35 μ m 2P4M CMOS process show that the proposed PLL achieves as low as 72.7 ps p2p jitter on silicon when the output frequency is 80 MHz and the power consumption is merely 10.5 mW given a 3.3 V power supply."
}
@article{Rao2007722,
title = "Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "722 - 726",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000936",
author = "R. Rao and J.E. Bradby and S. Ruffell and J.S. Williams",
keywords = "Nanoindentation",
keywords = "Phase transformation",
keywords = "Crystalline silicon",
keywords = "Relaxed amorphous silicon",
abstract = "Nanoindentation-induced phase transformation in both crystalline silicon (c-Si) and relaxed amorphous silicon (a-Si) have been studied. A series of nanoindentations were made with a sharp diamond Berkovich tip. During nanoindentations, maximum loads were applied from 1000 to 6000 μN, with a 1000 μN/s loading rate. A slow unloading rate at 100 μN/s was chosen to favor the formation of the high-pressure polycrystalline phases (Si-III and Si-XII). A fast unloading rate within 1 s was used to obtain a-Si end phase. The nanoindentation behavior and the structure of deformation regions were examined by load–depth characteristics curves and Raman. Large differences were observed between the transformation behavior in c-Si and that in relaxed a-Si. Indentation curves in c-Si present plastic deformation curves with elbow (no pop-out) on the unloading curves, even for loads up to 9000 μN. On the other hand, indentations in relaxed a-Si give rise to the same plastic deformation as c-Si at low loads (1000–2000 μN), whereas show clear pop-outs at high loads (above 3000 μN). Raman results suggest that high-pressure phases (HPPs) can occur more easily within a relaxed a-Si matrix than in a c-Si matrix. The results suggest a significantly different indentation behavior and phase transformation sequence in c-Si and relaxed a-Si at the nanoscale."
}
@article{Alwan2007727,
title = "Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "727 - 734",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000924",
author = "M. Alwan and B. Beydoun and K. Ketata and M. Zoaeter",
keywords = "Power MOSFET",
keywords = "Thermal stress",
keywords = "NBTI",
keywords = "PBTI",
keywords = "Gate charge",
keywords = "Thermal cycling",
abstract = "This paper reports the effects of bias temperature stress (positive and negative bias temperature instabilites, PBTI–NBTI) on threshold voltage, input capacitance and Miller capacitance of N-Channel Power MOSFET. The device is stressed with gate voltage under precision temperature forcing system. The bias temperature cycling also induces instabilities N-Channel Power MOSFET. The gate charge characteristics have been investigated before and after stress. The capacitances (the drain–gate and drain–source capacitances) are shifted due to the degradation of device physical properties under different stress time and stress temperature conditions. Bi-dimensional simulations have been performed for the 2D Power MOSFET structure and accurately analyzed. Gate charge characteristics of the device have been correlated to physical properties to analyze mechanisms responsible of parameter degradations. It is shown that the main degradation issues in the Si Power MOSFET are the charge trapping and the trap creation at the interface of the gate dielectric performed by energetic free carriers, which have sufficient energy to cross the Si–SiO2 barrier."
}
@article{Liu2007735,
title = "Study on new structure uncooled a-Si microbolometer for infrared detection",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "735 - 739",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000912",
author = "Xing-Ming Liu and Hua-Jun Fang and Li-Tian Liu",
keywords = "Uncooled IR detectors",
keywords = "Microbolometer",
keywords = "a-Si",
keywords = "Polyimide film",
abstract = "A new structure uncooled amorphous silicon (a-Si) microbolometer for infrared (IR) detection has been fabricated and characterized. New type of thermal isolation and IR absorption structures based on polyimide (PI) and bottom metal reflective layer are presented. The fabrication process is described in this paper. The as-prepared microbolometer has the advantage of low cost, high yield and moderate performance. The dependence of resistance with different aspect ratio on operating temperature has been investigated and the temperature coefficient of resistance (TCR) is achieved. Based on the measured responsivity and noise characteristics, the influence of detectivity on chopping frequency is discussed. According to the measurements and calculations results, the maximal TCR is −2.8% and at a bias voltage of 5 V, the maximum detectivity of 1.7×108 cm Hz1/2 W−1 is achieved at chopping frequency of 30 Hz."
}
@article{Joo2007740,
title = "Degradation analysis in asymmetric sampled grating distributed feedback laser diodes",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "740 - 745",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000900",
author = "Han Sung Joo and Sang-Wan Ryu and Jeha Kim and Ilgu Yun",
keywords = "Distributed feedback laser diode",
keywords = "Reliability",
keywords = "Degradation",
keywords = "Current–voltage characteristics",
abstract = "This paper presents the experimental observation of the degradation in asymmetric sampled grating DFB lasers by the accelerated life tests. Two degradation phenomena related to the electrical characteristics of LDs are observed during the tests. The first degradation phenomenon by increasing the reverse current is considered as a formation of leakage current path enough to prevent lasing operation in lateral blocking layer near active region of lasers. The second degradation phenomenon by decreasing the forward current is considered as activation of non-radiative Auger recombination process by thermal energy. It is also experimentally observed that the second degradation phenomenon is recovered after remained in room temperature with no electrical stress. Therefore, the criteria for LD reliability can be determined by observing the degradation of the reverse current–voltage characteristics."
}
@article{Škriniarová2007746,
title = "Periodic structures prepared by two-beam interference method",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "746 - 749",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000894",
author = "J. Škriniarová and D. Pudis˘ and I. Martinc˘ek and J. Kovác˘ and N. Tarjányi and M. Veselý and I. Turek",
keywords = "Periodic structure",
keywords = "Interference",
keywords = "Laser lithography",
abstract = "We present an optical interference method as the efficient tool for high-quality one- (1D) and two-dimensional (2D) periodic structure fabrication. Different types of 2D periodic structures are prepared using two-beam interference technique by double exposure. Also, the patterning of Au layer is provided using two-beam interference method. Quite homogeneous 1D and 2D structures with small periodicity were prepared in photoresist and Au layer. The experimentally prepared structures are well in agreement with the theoretically designed ones. According to experimental results, we favor two-beam interference technique using multi-exposure process as a very useful method for fabrication of 2D periodic structures and devices for integrated optoelectronics."
}
@article{Tsai2007750,
title = "Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "750 - 753",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000882",
author = "Jung-Hui Tsai and I-Hsuan Hsu and Tzu-Yen Weng and Chien-Ming Li",
keywords = "InGaP/GaAs",
keywords = "Heterostructure emitter",
keywords = "Superlattice base",
keywords = "Turn-on voltage",
keywords = "Offset voltage",
abstract = "A novel InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with InGaAs/GaAs superlattice-base structure is proposed and demonstrated by two-dimensional analysis. As compared with the traditional HEBT, the studied superlattice-base device exhibits a higher collector current, a higher current gain of 246, and a lower base–emitter (B–E) turn-on voltage of 0.966 V at a current level of 1 μA, attributed to the increased charge storage of minority carriers in the InGaAs/GaAs superlattice-base region by tunneling behavior. The low turn-on voltage can reduce the operating voltage and collector–emitter offset voltage for low power consumption in circuit applications."
}
@article{NG2007754,
title = "Spin-coated PMMA films",
journal = "Microelectronics Journal",
volume = "38",
number = "6–7",
pages = "754 - 761",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.04.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000870",
author = "N.G. and Semaltianos",
keywords = "Spin coating",
keywords = "PMMA",
keywords = "Atomic force microscopy",
abstract = "Polymethylmethacrylate (PMMA) spin-coated thin films are commonly used as resist films in micro/nanofabrication processes. By using atomic force microscopy (AFM) imaging, scratching lithography and force–distance curves spectroscopy, the spin coating and post-processing conditions were determined, for obtaining films whose surface morphology appears featureless or is dominated by pinholes and other surface defects. Featureless appear the surfaces of films spin coated at 8 krpm from a 1.25% solution on silicon substrates and postbaked at 200 °C for 2 min on a hot plate, while surface defects in the form of large circular pits with diameters between 10 and 20 μm and depth of ∼2 nm dominate the surface morphologies of films spin coated at 7 krpm on glass substrates from a 2% solution and postbaked either at 200 °C for 2 min on a hot plate or at 170 °C for 30 min in an oven. Surface defects in the form of pinholes appear on the surfaces of films spin coated at 8 krpm on silicon substrates from a 1.25% solution (thickness of ∼8 nm) and postbaked at 170 °C for 60 min in an oven or left in a low vacuum chamber for a few days. The implication of the different film properties—depending on the preparation parameters—in lithographic techniques is explained and discussed in the paper."
}
@article{tagkey2007IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "IFC - ",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00096-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000961",
key = "tagkey2007IFC"
}
@article{DeVenuto2007453,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "453 - ",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700002X",
author = "Daniela De Venuto and Tom Chen"
}
@article{Rahimi2007454,
title = "Self-tuning adaptive delay sequential elements",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "454 - 462",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002928",
author = "Kambiz Rahimi and Chris Diorio",
keywords = "Self-tuning",
keywords = "Clock distribution",
keywords = "Floating gates",
abstract = "Random manufacturing variations and changes in operating conditions can alter the relative timing of data and clock signals and cause timing violations. Increasing relative magnitude of manufacturing variations and accommodating a wide range of operating conditions necessitate large design margins and decrease circuit performance. In-circuit tuning of clock latencies allows recovering some of the performance loss. In this paper, we introduce self-tuning adaptive-delay sequential elements (SASEs) that use PMOS floating gates to tune clock latencies of individual flip-flops. SASEs are capable of concurrent, in-circuit optimization of clock latencies under varying operating conditions. We use examples of implicit and explicit pulsed flip-flops to present SASEs operations and tuning methods. Our experiments with fabricated prototypes show that SASEs can tune their clock latencies with picosecond resolution over one half of the clock period. Our experiments also show that SASEs’ sensitivities are comparable to non-adaptive flip-flops and do not pose any practical limitations. We also present a tuning procedure for pipeline circuits that tunes SASEs’ clock latencies to maximize performance."
}
@article{Alam2007463,
title = "Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "463 - 473",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002849",
author = "Syed M. Alam and Chee Lip Gan and Carl V. Thompson and Donald E. Troxel",
keywords = "Computer-aided design (CAD)",
keywords = "Electromigration",
keywords = "Reliability",
keywords = "Aluminum (AL) interconnects",
keywords = "Copper (Cu) interconnects",
keywords = "Thermal analysis",
abstract = "We have developed a set of methodologies for thermal aware circuit-level reliability analysis with either Al or Cu metallization in a circuit layout and implemented it in a public domain reliability CAD tool, SysRel. SysRel utilizes a hierarchical reliability analysis flow, with interconnect trees treated as the fundamental reliability unit, that sufficiently captures the differences in electromigration failure between Al and Cu metallizations. Under similar test conditions, the electromigration reliability of Al and Cu interconnect trees demonstrates significant differences because of the differences in interconnect architectural schemes. Using the best estimates of material parameters and an analytical model, we present a detail comparison of electromigration reliability of a sample test-structure as well as of actual circuit layouts with Al and Cu dual-damascene interconnect systems. We also demonstrate fast thermal-analysis in SysRel for circuit performance driven chip-level reliability assessment."
}
@article{DeVenuto2007474,
title = "Fully digital strategy for fast calibration and test of ΣΔ ADCs",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "474 - 481",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.08.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000754",
author = "Daniela De Venuto and Leonardo Reyneri",
keywords = "Test technique",
keywords = "High resolution sigma delta ADC",
abstract = "This work describes a novel test strategy that uses digital stimuli for cheap, fast, though accurate, testing of high resolution ΣΔ ADCs. Simulation results showed a detection sensitivity on specifications parameters of up to −100 dB. The proposed method can also help to reduce the cost of ADC production test, to extend test coverage and to enable built-in self-test and test-based self-calibration."
}
@article{NavarroBotello2007482,
title = "High performance low power CMOS dynamic logic for arithmetic circuits",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "482 - 488",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000651",
author = "Victor Navarro-Botello and Juan A. Montiel-Nelson and Saeid Nooshabadi",
keywords = "Dynamic logic",
keywords = "CMOS digital integrated circuits",
keywords = "CMOS logic circuits",
keywords = "Low power arithmetic circuits",
keywords = "High speed arithmetic circuits",
abstract = "This paper presents the design of high performance and low power arithmetic circuits using a new CMOS dynamic logic family, and analyzes its sensitivity against technology parameters for practical applications. The proposed dynamic logic family allows for a partial evaluation in a computational block before its input signals are valid, and quickly performs a final evaluation as soon as the inputs arrive. The proposed dynamic logic family is well suited to arithmetic circuits where the critical path is made of a large cascade of inverting gates. Furthermore, circuits based on the proposed concept perform better in high fanout and high switching frequencies due to both lower delay and dynamic power consumption. Experimental results, for practical circuits, demonstrate that low power feature of the propose dynamic logic provides for smaller propagation time delay (3.5 times), lower energy consumption (55%), and similar combined delay, power consumption and active area product (only 8% higher), while exhibiting lower sensitivity to power supply, temperature, capacitive load and process variations than the dynamic domino CMOS technologies."
}
@article{DoménechAsensi2007489,
title = "A behavioral model development methodology for microwave components and integration in VHDL-AMS",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "489 - 495",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.017",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700064X",
author = "Ginés Doménech-Asensi and Juan Hinojosa and Juan Martínez-Alajarín",
keywords = "Anisotropic media",
keywords = "CAD/EDA",
keywords = "Linear regression models",
keywords = "Tunable circuits and devices",
keywords = "VHDL-AMS",
abstract = "The new generation of system-on-chip (SoC) incorporates digital, analogue, radiofrequency (RF)/microwave and mixed-signal components. Therefore, novel design methodologies must be developed to direct the design of these mixed-technology systems, which will have to include accurate behavioral libraries of devices and processes. Thus, this paper describes a behavioral modeling approach which generates accurate empirical models for RF/microwave devices and that can be easily integrated into a VHDL-AMS simulator. This approach is applied to a microwave tunable phase shifter and it is illustrated by the development of a VHDL-AMS model library for RF/microwave applications."
}
@article{Hizem2007496,
title = "Blue/green luminescence based on Zn(S)Se/GaAs heterostructures",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "496 - 500",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000638",
author = "N. Hizem and A. Kalboussi and R. Adhiri and A. Souifi",
keywords = "Electroluminescence",
keywords = "Photocurrent",
keywords = "Photoluminescence",
keywords = "Heterostructures",
keywords = "ZnSe/GaAs",
abstract = "Substantial advances have been realized in the aim to achieve blue–green light emitting devices based on Zn(S)Se wide band gap II–VI semi-conductor materials. Two light emitting diodes p on n and n on p heterostructures were grown on GaAs substrate by molecular beam epitaxy. The active layer was a single ZnCdSe quantum well, with ZnSSe guiding layers and ZnSe cladding layers. p-GaInP, p-AlGaAs and p-CdZnSe buffer layers were deposited at the p-ZnSe/GaAs interface to reduce the valence band offset in the case of n on p heterostructures. Electrical and optical properties were investigated using current voltage, capacitance voltage, electroluminescence, photoluminescence and photocurrent measurements at room temperature. Blue–green luminescence centered at 516.7 nm is observed. The highest luminescence intensity is observed under 7 V forward bias. Photoluminescence spectrum shows two wide peaks at 2.2 and 1.9 eV energies. These energies are attributed to the transitions between ZnSe and GaAs conduction bands and the deep level at Ev−0.6 eV. Absorption process from ZnSe and ZnSSe conduction bands to the shallow nitrogen acceptor level (2.6 and 2.8 eV, respectively) have been observed using photocurrent measurements. From these results we present a band alignment diagram which confirms the presence of the two levels at 0.1 and 0.6 eV from the valence band of ZnSe."
}
@article{Huang2007501,
title = "Dissociation of excitons in organic light-emitting diodes",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "501 - 504",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000626",
author = "Jin Zhao Huang and Zheng Xu and Fu Jun Zhang and Su Ling Zhao and Yuan Li and Lin Song and Xu Rong Xu",
keywords = "Organic light-emitting diodes",
keywords = "Excitons",
keywords = "Quenching",
keywords = "Dissociation",
abstract = "In this paper, the dissociation of excitons in both doped and undoped organic light-emitting diodes is investigated in detail by means of electric-field-induced photoluminescence quenching. The results show that the doped devices demonstrate lower quenching than that of undoped device. The reason is that the narrower energy band gap of guest molecules compared to that of the host molecules. In doped devices the increasing concentration of the guest molecules leads to a decrease in dissociation of excitons. The reason is that the increasing of the guest molecules concentration can result in an increase in the fraction of excitons residing on the guest molecules. Besides, the decreasing energy band gap of guest molecules can also make lower quenching in the doped devices."
}
@article{Anani2007505,
title = "Calculation of the effective indices of a GaN/InxGa1−xN optical guiding structure",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "505 - 508",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000614",
author = "Macho Anani and Christian Mathieu and Hamza Abid and Sara Lebid and Y. Amar",
keywords = "Integrated optics",
keywords = "Step index optical waveguide",
keywords = "Effective refractive index",
keywords = "III-nitrides",
abstract = "In this paper, the effective refractive index of a GaN/In0.38Ga0.62N optical step index optical guiding structure has been investigated. The used method permits to approximate a three-dimensional optical waveguide to an equivalent waveguide where the index profile to be determined will only depend on y and z co-ordinates.
The III-nitrides semiconductor devices have not been used or even investigated in the integrated optics field in order to design optical waveguides. It has been found that there exists a very good optical confinement in this device, where the In0.38Ga0.62N is lattice matched to the GaN."
}
@article{Hu2007509,
title = "Improving the performance of organic thin-film transistor with a doped interlayer",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "509 - 512",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000602",
author = "Wei Hu and Yi Zhao and Chunsheng Ma and Jingying Hou and Shiyong Liu",
keywords = "Organic thin-film transistor",
keywords = "OTFT",
keywords = "Pentacene",
abstract = "Top contact organic thin-film transistors (TC OTFTs) based on pentacene are fabricated. For improving the contact characteristics between the organic semiconductor thin-film and gold electrodes, we doped the starburst molecular 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine) (m-MTDATA), which is an excellent hole injection material for the organic light-emitting devices (OLEDs), into the interlayer contact with the electrodes. Compared with conventional TC OTFT, the performances of the organic transistor with the doped interlayer are improved. The field-effect mobility increases from 0.16 to 0.51 cm2/V s, and threshold voltage downshifts from –11 to –2.8 V for the linear region. The on/off current ratio is more than 104 when the gate voltage varies from 0 to –20 V. We ascribe the improvements to the doped interlayer for which the contact resistance is reduced and the hole injection is enhanced."
}
@article{Rimada2007513,
title = "Conversion efficiency enhancement of AlGaAs quantum well solar cells",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "513 - 518",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000596",
author = "J.C. Rimada and L. Hernández and J.P. Connolly and K.W.J. Barnham",
keywords = "Quantum well",
keywords = "Solar cell",
keywords = "AlGaAs",
keywords = "Conversion efficiency",
keywords = "Modelling",
abstract = "The quantum efficiency and photocurrent for AlGaAs quantum well solar cell is calculated and compared with experimental results obtaining good agreement. The conversion efficiency as a function of Al composition in barriers and wells is presented showing that there is a wide range of Al composition barrier and Al composition well where the QWSC efficiency is always higher than corresponding homogeneous p–i–n cell without quantum wells. We also show that for up to 15 wells in the intrinsic region an efficiency enhancement for the QWSC over the baseline cell is obtained."
}
@article{Dai2007519,
title = "Modeling and fabrication of a microelectromechanical microwave switch",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "519 - 524",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000584",
author = "Ching-Liang Dai and Heng-Ming Hsu and Ming-Chang Tsai and Ming-Ming Hsieh and Ming-Wei Chang",
keywords = "Microwave switch",
keywords = "CMOS",
keywords = "Micro actuator",
abstract = "A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) post-process has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The post-process requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of −2 dB at 50 GHz and an isolation of −15 dB at 50 GHz. The driving voltage of the switch approximates to 19 V."
}
@article{Huang2007525,
title = "Design of sequential circuits by quantum-dot cellular automata",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "525 - 537",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000572",
author = "J. Huang and M. Momenzadeh and F. Lombardi",
keywords = "QCA",
keywords = "Sequential design",
keywords = "Emerging technology",
keywords = "Delay matching",
keywords = "Adiabatic switching",
abstract = "This paper proposes a detailed design analysis of sequential circuits for quantum-dot cellular automata (QCA). This analysis encompasses flip-flop (FF) devices as well as circuits. Initially, a novel RS-type FF amenable to a QCA implementation is proposed. This FF extends a previous threshold-based configuration to QCA by taking into account the timing issues associated with the adiabatic switching of this technology. The characterization of a D-type FF as a device consisting of an embedded wire is also presented. Unique timing constraints in QCA sequential logic design are identified and investigated. An algorithm for assigning appropriate clocking zones to a QCA sequential circuit is proposed. A technique referred to as stretching is used in the algorithm to ensure timing and delay matching. This algorithm relies on a topological sorting and enumeration step to consistently traversing only once the edges of the graph representation of the QCA sequential circuit. Examples of QCA sequential circuits are provided."
}
@article{Zaatar2007538,
title = "Fabrication and characterization of stacked ZnO and ZnOGa2O3 layers for the realization of bulk acoustic wave resonated membranes",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "538 - 546",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000560",
author = "Y. Zaatar and R. Al Asmar and J. Podlecki and S. Youssef and M. Abdallah and N. Ouaini and A. Foucaran",
keywords = "Zinc oxide",
keywords = "ZnOGa2O3",
keywords = "Structural properties",
keywords = "Optical properties",
keywords = "Hyper frequency characterizations",
keywords = "Bulk acoustic wave resonators (BAW) and membranes",
abstract = "ZnOGa2O3 alloys have been deposited by electron beam co-evaporation technique below the piezoelectric radio frequency magnetron sputtered ZnO films, with the aim of reducing the compressive stress due to the piezoelectric zinc oxide elaborated by radio frequency magnetron technique. The structural characterizations of the Ga2O3 thin films show an amorphous structure. Co-evaporating gallium oxide with zinc oxide has improved the optical and structural qualities of the e-beam zinc oxide films. Thus, deposing compressive rf magnetron sputtered piezoelectric ZnO on tensile thin layers of ZnOGa2O3, has reduced the stress and improved the structural quality of the realized bulk acoustic wave resonators. The fabrication of less stressed ZnO resonators has permitted to liberate partially our membranes by attacking the silicon substrate on which the resonator is realized. Finally, hyper frequency characterizations have been done by a network analyzer to study the influence of the silicon substrate thickness on the piezoelectric activity."
}
@article{Kabra2007547,
title = "Two-dimensional subthreshold analysis of sub-micron GaN MESFET",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "547 - 555",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000559",
author = "Sneha Kabra and Harsupreet Kaur and Subhasis Haldar and Mridula Gupta and R.S. Gupta",
keywords = "GaN",
keywords = "MESFET",
keywords = "Sub-threshold analysis",
keywords = "DIBL",
abstract = "An analytical two-dimensional (2D) model to accurately predict the channel potential and electric field distribution in sub-micron GaN MESFET operating in the sub-threshold regime based on (2D) analytical solution of Poisson's equation using superposition principle is presented. The results so obtained for channel potential, electric field, threshold voltage, etc are compared with simulated data using ATLAS 2D device simulator. The model is then extended to predict the current voltage characteristics and the effects of drain induced barrier lowering (DIBL) on the performance. Furthermore, the sub-threshold output characteristics of the device are also interpreted qualitatively."
}
@article{Fu2007556,
title = "Design and fabrication of a magnetic bi-stable electromagnetic MEMS relay",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "556 - 563",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000547",
author = "Shi Fu and Guifu Ding and Hong Wang and Zhuoqing Yang and Jianzhi Feng",
keywords = "MEMS relay",
keywords = "Bistable",
keywords = "Wiggling microactuator",
keywords = "Electrical contact",
abstract = "This paper describes the principles, design, fabrication and performance of a new type of electromagnetic bistable MEMS relay. The microdevice is operated by a wiggling microactuator, which is symmetrically assembled with two integrated planar windings and one permanent rotor in the form of sandwich with coaxial sustained gaps between each other. The micromachined rotor moves to-and-fro around the axis and operates the joined brush to open or close external circuit. This hybrid MEMS relay has been provided with fast response and latching function owing to the special design. The response time is about 0.3 ms and the maximum load current is 2 A."
}
@article{ZhongZhi2007564,
title = "Influence of electrode characteristics on the performance of organic light-emitting devices",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "564 - 569",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000523",
author = "Zhong Zhi and You",
keywords = "Light-emitting devices",
keywords = "Indium-tin oxide electrodes",
keywords = "Surface modification",
keywords = "Device performance",
abstract = "Indium-tin oxide (ITO) substrates were treated by oxygen plasma for organic light-emitting devices (OLEDs). Using the ITO substrates aged for various times as hole-injecting electrodes, the double-layered OLEDs were fabricated by the vacuum sublimation technique, and the aging effect of treated ITO anodes on the performance of OLEDs was studied with respect to the electroluminescence efficiency, brightness and driving voltage. Experimental results reveal that the luminescent and electrical characteristics of the OLEDs are strongly dependent on the properties of the ITO anodes, and the ITO anodes aged for various times result in significant differences in device performance, which become worse with the increment of the aging time. The measurements of X-ray photoelectron spectroscopy (XPS) and surface energy show that carbon concentration increases, oxygen concentration reduces and surface energy decreases, and thereby the improved surface properties of ITO tend to decay, as the aging time increases. It indicates that the device performance of the OLEDs is closely related to the surface characteristics of the ITO anodes."
}
@article{Yin2007570,
title = "Electronic transport through a T-shaped four-quantum dot system",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "570 - 575",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000511",
author = "Haitao Yin and Tianquan Lü and Hua Li and Zelong He",
keywords = "Quantum dot",
keywords = "Transmission probability",
keywords = "Electronic transport",
abstract = "Making use of the equation of motion method and Keldysh Green's function technique, we have developed a calculation method by which an analytical formula for the current under dc bias is obtained and the transmission probabilities are numerically studied for a T-shaped four-quantum dot (QD) system connected to three terminals. The results are explained in terms of the localization properties of the confined states in the system."
}
@article{Kinder2007576,
title = "Simulation of boron diffusion in Si and strained SiGe layers",
journal = "Microelectronics Journal",
volume = "38",
number = "4–5",
pages = "576 - 582",
year = "2007",
note = "Special Issue of the 6th International Symposium on Quality Electronic Design (ISQED) March 21-23 San Jose, CA",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000493",
author = "R. Kinder and F. Schwierz and P. Beňo and J. Geßner",
keywords = "SiGe HBT",
keywords = "Doping profile",
keywords = "SUPREM IV.GS",
keywords = "ISE TCAD",
abstract = "Boron outdiffusion from the base into the emitter and collector caused by annealing in SiGe heterobipolar transistors (HBTs) has a serious influence on the transit frequency. One solution of the problem of boron outdiffusion is the creation of intrinsic spacers between the base, emitter and collector layers to prevent diffusion of boron across the heterointerface. For optimisation of SiGe HBT properties, several simulators are used. This paper presents a quantitative analysis of a SiGe HBT by process simulators SUPREM IV.GS and ISE TCAD-DIOS. Models for simulation of a boron-doped SiGe base of HBT are discussed and compared."
}
@article{tagkey2007IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "IFC - ",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00067-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000675",
key = "tagkey2007IFC"
}
@article{Sahu2007299,
title = "Properties of ZnO/Cu/ZnO multilayer films deposited by simultaneous RF and DC magnetron sputtering at different substrate temperatures",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "299 - 303",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000353",
author = "D.R. Sahu and Jow-Lay Huang",
keywords = "TCO",
keywords = "Multilayer",
keywords = "Sputtering",
keywords = "Electrical and optical properties",
abstract = "ZnO/Cu/ZnO transparent conductive multilayer films are prepared by simultaneous RF sputtering of ZnO and DC sputtering of Cu. The properties of the multilayer films are studied at different substrate temperatures. Sheet resistance of the multilayer film decreased initially with increase of substrate temperature and increased further with increase of substrate temperature beyond 100 °C. However, transmittance of the multilayer film increased with increase of substrate temperature. Good transparent conductive film of sheet resistance 9.3 Ω/sq and transmittance of 85% was found at a substrate temperature of 100 °C. The performance of the multilayer film was evaluated using a figure of merit. The observed property of the multilayer film is suitable for the application of transparent conductive electrodes."
}
@article{Wu2007304,
title = "Fabrication of low-loss thin film microstrip line on low-resistivity silicon for RF applications",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "304 - 309",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000341",
author = "Hung-Wei Wu and Yan-Kuin Su and Ru-Yuan Yang and Min-Hang Weng and Yu-Der Lin",
keywords = "Low K",
keywords = "Thin film microstrip line (TFML)",
keywords = "Silicon",
keywords = "Polyimide",
keywords = "ICP",
abstract = "A detail fabricating process and characterization of thin film microstrip line (TFML) on low K polyimide, used for interconnects in radio frequency integrated circuits (RFICs) technology, is reported in this study. By incorporating a spin-on dielectric polyimide and sputtering of aluminum, the TFML is fabricated on low-cost low-resistivity silicon (LRS) substrate (ρ⩽10 Ω cm). The TFML with a thickness of 20 μm polyimide dielectric layer presents attenuation losses of 0.385 dB/mm at 25 GHz and 0.438 dB/mm at 50 GHz. Effective dielectric constant and attenuation of TFML on polyimide are carefully investigated and discussed."
}
@article{Lin2007310,
title = "The study of δ-doped InGaP/InGaAs/GaAs pseudomorphic high electron mobility transistor",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "310 - 315",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000328",
author = "Jia-Chuan Lin and Yu-Chieh Chen and Wei-Chih Tsai",
keywords = "HEMT",
keywords = "E-mode pHEMT",
keywords = "δ-Doped",
keywords = "Maximum drain-source current",
keywords = "Transconductance",
keywords = "MEDICI",
keywords = "Poisson's equation",
abstract = "An enhancement-mode pseudomorphic high electron mobility transistor (E-mode pHEMT) with In0.49Ga0.51P/In0.25Ga0.75As/GaAs structure is studied in this paper. The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations. An optimized δ-doped InGaP/InGaAs pHEMT structure is found to be superior to the conventional AlGaAs/InGaAs pHEMT. It reveals that the maximum drain-source current (IDS) goes up to 1600 mA/mm and transconductance (Gm) is 2120 mS/mm."
}
@article{Zhao2007316,
title = "A novel all-plastic diode based upon pure polyaniline material",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "316 - 320",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920700033X",
author = "Chun Zhao and Shuangxi Xing and Youhai Yu and Wanjin Zhang and Ce Wang",
keywords = "Polyaniline",
keywords = "All-plastic diode",
keywords = "Doping degree",
abstract = "All-plastic electronic devices have developed increasingly nowadays and a trend to use them replacing the conventionally Si-based inorganic semiconductor devices is becoming attractive. Here, we developed a new and simple method to fabricate a single-component all-polymer diode based on a conducting polymer, polyaniline (PANI), using different manners to form films on two ends of a transparency with an obviously divided boundary between them. The different doping degree is considered to induce this rectification."
}
@article{Alvarado2007321,
title = "Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "321 - 326",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000316",
author = "Joaquín Alvarado and Antonio Cerdeira and Valeria Kilchytska and Denis Flandre",
keywords = "MOSFET modeling",
keywords = "Compact modeling",
keywords = "Harmonic distortion",
keywords = "Integral Function Method",
abstract = "This work presents an Improved Charge Sheet compact Model (ICSM) especially valuable for distortion analysis, where precise calculation of derivatives of at least third order is required. A new expression for the charge is used in the calculation of the current. Vertical electric field, mobility and DIBL are represented using previously reported for other purposes more precise expressions. The very good agreement obtained between experimental PD SOI MOSFETs with channel lengths from 0.32 to 10 μm and modeled currents, derivatives and distortion figures is shown."
}
@article{Reig2007327,
title = "Crystal growth of Hg1−xMnxSe for infrared detection",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "327 - 331",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000304",
author = "C. Reig and C.J. Gómez-García and V. Muñoz-Sanjosé",
keywords = "Crystal growth",
keywords = "Semimagnetic semiconductors",
keywords = "HgMnSe",
keywords = "Infrared",
abstract = "In this work, we report on the successfully growing Hg1−xMnxSe bulk crystals using a mixed, travelling heater method and Bridgman method, two-step procedure. Firstly, and with the aim of reducing Hg high pressure related to the high temperature synthesis reaction between the components in elemental form, HgSe crystals were synthesized and grown by the cold travelling heater method. Secondly, previously sublimated Mn and Se were incorporated to complete the desired composition. Then, the Bridgman growth was carried out by heating the alloy at a temperature of about 880 °C and lowering it at rate of 1 mm/h through a gradient of 25 °C/cm. The Hg1−xMnxSe crystals were characterized by scanning electron microscopy, energy dispersive X-ray analysis, X-ray diffractometry, Fourier transform infrared spectroscopy and magnetic susceptibility measurements. The summary of the experimental results allows us to be optimistic with the potential of Hg1−xMnxSe as regards using Hg1−xMnxTe and Hg1−xCdxTe for infrared photodetection."
}
@article{AE2007332,
title = "Multiband Riccati equation for electronic structure and transport in type-II heterostructures",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "332 - 341",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000274",
author = "A.E. and Botha",
keywords = "Semiconductor nanostructures",
keywords = "Quantum transport",
keywords = "Riccati equation",
abstract = "An alternative method is proposed and implemented to calculate electronic structure and quantum transport properties of type-II heterojunctions. By deriving a multiband k · p Riccati equation for the envelope function matrix, it is shown how to obtain the reflection matrix through a simple numerical integration of the Riccati equation. Numerical instability, which is usually associated with type-II systems due to the simultaneous presence propagating and evanescent states, is avoided by working with the logarithmic derivative of the envelope function matrix.
The theory is implemented numerically for a 6-band k · p matrix Hamiltonian in which the electron spin components have been decoupled. Preliminary results are presented for InAs/GaSb/InAs quantum wells. First, the calculated transmission versus energy curves are compared to those obtained from the microscopic empirical pseudo-potential calculation of Edwards and Inkson [Semicond. Sci. Technol. 9 (1994) 178]. For GaSb layer widths of 18, 55 and 152 Å, the transmission spectra agree almost exactly. Minor discrepancies are discussed. Second, the net current density is calculated at room temperature as a function of applied voltage. For a GaSb layer width of 74 Å, the self-consistently calculated net current density and peak-to-valley ratios are found to be in semi-quantitative agreement with the experiment of Yu et al. [Appl. Phys. Lett. 57 (1990) 2675].
Other than its applications to electron tunneling, which can include spin-dependent tunneling (spintronics), the theory may also be applied to emerging field of multi-channel inverse scattering; in which desired transmission or reflection properties are used as input for designing heterostructure potential profiles."
}
@article{Rostami2007342,
title = "A novel proposal for ultra-high optical nonlinearity in GaN/AlGaN spherical centered defect quantum dot (SCDQD)",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "342 - 351",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000298",
author = "A. Rostami and H. Rasooli Saghai",
keywords = "SCDQD",
keywords = "Quantum dot",
keywords = "Spherical defect",
keywords = "Third-order susceptibility",
abstract = "In this paper a novel idea for enhancement and tunable optical nonlinearity based on spherical centered defect quantum dot (SCDQD) is proposed. The proposed structure is a special quantum dot including a spherical defect inside it. Complete analysis of the proposed structure based on the effective mass equation is done and optical properties (third-order susceptibilities of quadratic electro-optic effect (QEOE) and third harmonic generation (THG) associated with intersubband transition) of the introduced structure using density matrix method are investigated also. Effects of system parameters including defect and dot on energy levels and optical nonlinearity are examined. We observed that the proposed structure has high nonlinear and tunable susceptibilities suitable for implementation of optical active and passive devices. It is shown that the magnitudes of dipole transition matrix element, third-order susceptibilities of THG and QEOE can be increased significantly compared traditional cases (4.5–10 nm, 10−11–10−9 m2/V2 and 10−12–10−9 m2/V2, respectively). Also, the resonance wavelengths are displaced using these parameters that can be used for realization of tunable devices."
}
@article{Kaur2007352,
title = "An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "352 - 359",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000286",
author = "Harsupreet Kaur and Sneha Kabra and Subhasis Haldar and R.S. Gupta",
keywords = "Device modeling",
keywords = "Surrounding gate MOSFET",
keywords = "Graded channel",
keywords = "Drain current enhancement",
keywords = "Reduced drain conductance",
keywords = "Improved breakdown voltage",
abstract = "In the present paper, a comprehensive drain current model incorporating various effects such as drain-induced barrier lowering (DIBL), channel length modulation and impact ionization has been developed for graded channel cylindrical/surrounding gate MOSFET (GC CGT/SGT) and the expressions for transconductance and drain conductance have been obtained. It is shown that GC design leads to drain current enhancement, reduced output conductance and improved breakdown voltage. The effectiveness of GC design was examined by comparing uniformly doped (UD) devices with GC devices of various L1/L2 ratios and doping concentrations and it was found that GC devices offer superior characteristics as compared to the UD devices. The results so obtained have been compared with those obtained from 3D device simulator ATLAS and are found to be in good agreement."
}
@article{Xiao2007360,
title = "A cost-effective flexible MEMS technique for temperature sensing",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "360 - 364",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000377",
author = "Suyan Xiao and Lufeng Che and Xinxin Li and Yuelin Wang",
keywords = "Flexible MEMS technology",
keywords = "Temperature-sensing array",
keywords = "Polyimide",
keywords = "Platinum thin film",
abstract = "A simplified, cost-effective flexible micro-electronic-mechanical systems (MEMS) technology has been developed for realizing a temperature-sensing array on a flexible polyimide substrate. The fabrication technique utilized liquid polyimide to form flexible film on the rigid silicon wafer using a temporary carrier during the fabrication. The platinum thin film is employed as temperature sensitive material and 8×8 temperature-sensing arrays were micromachined on the polyimide, from which the silicon wafer carrier was removed at the end of fabrication. The platinum thin film temperature sensor exhibits excellent linearity and its temperature coefficient of resistance reaches 0.00291 °C−1. Because of the effective thermal isolation, the flexible temperature sensors show a high sensitivity of 1.12 Ω/°C at 10 mA to the constant drive current. The flexible MEMS technology based on liquid polyimide enables the development of flexible, compliant, robust, and multi-modal sensor skins for many other important applications, such as robotics, biomedicine, and wearable microsystems."
}
@article{Shi2007365,
title = "Distortion of pulsed signals in carbon nanotube interconnects",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "365 - 370",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000262",
author = "Xiaomeng Shi and Kiat Seng Yeo and Jian-Guo Ma and Manh Anh Do",
keywords = "Carbon nanotube",
keywords = "Interconnect",
keywords = "Signal distortion",
keywords = "Transmission line",
abstract = "This paper investigates the distortion of DC and radio frequency (RF) pulsed signals in carbon nanotube interconnects. A modified transmission line model for single-walled carbon nanotubes is employed for the simulation. Comparisons with the conventional AlCu interconnect are performed."
}
@article{Kim2007371,
title = "Mechanical behavior of mismatch strain-driven microcantilever",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "371 - 380",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000250",
author = "Sang-Hyun Kim and James G. Boyd and Sathyanarayanan Mani",
keywords = "Mismatch strain",
keywords = "Electroplated nickel",
keywords = "Microcantilever",
keywords = "Electrodeposition",
abstract = "A model of mechanical behavior of microcantilever due to mismatch strain during deposition of MEMS structures is derived. First, a microcantilever, modeled as an Euler–Bernoulli beam, is subjected to deposition of another material and a linear ordinary differential equation which considers the through-thickness variation of the mismatch strain is derived. Second, the deposition analysis is experimentally realized by electroplating of nickel onto an atomic force microscope (AFM) cantilever beam. Young's modulus of the electroplated nickel film is determined by using Sader's method and elementary beam theory. The deflection of the AFM cantilever is in-situ measured as a function of the electroplated thin film thickness through the optical method of AFM and the mismatch strain with the through-thickness variation is determined from the experiment results."
}
@article{Zardalidis2007381,
title = "Design and simulation of a nanoelectronic single electron 2–4 decoder using a novel simulator",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "381 - 387",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000249",
author = "George T. Zardalidis and Ioannis Karafyllidis",
keywords = "Nanoelectronics",
keywords = "Single electron circuits",
keywords = "Single electron circuit simulation",
keywords = "Decoder",
abstract = "The design and simulation of a single-electron 2–4 decoder using a novel single electron circuit simulation tool named single-electron circuit simulator (SECS), is presented in this paper. In single electron circuits bits of information are represented by the presence or absence of single electrons at conducting or semiconducting islands. SECS utilizes the Monte Carlo method and the change in free-energy of the whole circuit determines the tunnel rates of possible tunnel events, providing thus a real time simulation of any arbitrary single-electron circuit. Furthermore, SECS is using the SPICE interface for schematic capture. SPICE models of single-electron circuit structures have been developed and, therefore, SECS can also be used for the design and simulation of hybrid microelectronic—single-electron circuits."
}
@article{AlonzoMedina2007388,
title = "An in situ technique to measure gold resistance oscillations during the first stages of growth",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "388 - 391",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000237",
author = "G.M. Alonzo-Medina and A.I. Oliva",
keywords = "Resistance oscillation",
keywords = "Nanostructures",
keywords = "Gold-thin films",
keywords = "Thermal evaporation",
abstract = "An experimental technique developed for measuring the oscillating behavior of the electrical resistance during the first stages of growth of thin gold films deposited on silicon (1 0 0) substrate is described. The in situ technique uses the small electrical resistivity of the Si substrate to apply a fixed voltage through it and measure the electrical current generated during film growth. Thermal evaporation of gold at very low deposition rates produces changes on the electrical current which can be acquired meanwhile the first atoms impinges on the substrate. High precision and repeatability were achieved with the proposed method as demonstrated with the measured oscillating behavior of the resistance. The implemented technique and the obtained results could be useful to compare the proposed theoretical models to explain this behavior."
}
@article{Chen2007392,
title = "Determination of boron concentration in heavily doped p-type Si1−xGex/Si heterostructure by infrared ellipsometric spectroscopy",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "392 - 397",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000225",
author = "Changchun Chen and Jiangfeng Liu and Benhai Yu and Qirun Dai",
keywords = "Boron concentration",
keywords = "Si1−xGex alloys",
keywords = "Infrared spectroscopic ellipsometry (IRSE)",
abstract = "Si1−xGex/Si heterostructures play a primary role in the Si-based fast electronics developments of today. In this work, we will present the experimental results of infrared spectroscopic ellipsometry (IRSE) for structural determination of the boron heavily doped SiGe/Si sample grown by ultra-high vacuum chemical vapor deposition (UHVCVD) (the Ge atomic percent, the thickness of SiGe film and boron concentration). Especially, the principle of boron concentration in p-type SiGe film layer determined by IRSE was elucidated in detail. In addition, in order to corroborate the validity of IRSE for determining dopant concentration, secondary ion mass spectroscopy (SIMS) experiment has also been carried out. The close experimental agreement between IRSE and SIMS demonstrate that IRSE as a contactless, and non-destructive technology can be used in-line tools in production used for measuring the Ge content, the thickness of SiGe layer and boron concentration in p-type dopant SiGe/Si heterostructure, which often used the base layer of SiGe hetero-junction bipolar transistor (HBT) devices."
}
@article{Zhang2007398,
title = "Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "398 - 400",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000213",
author = "Tiemin Zhang and Guoqing Miao and Yixin Jin and Jianchun Xie and Hong Jiang and Zhiming Li and Hang Song",
keywords = "In0.82Ga0.18As",
keywords = "Buffer layer",
keywords = "MOCVD",
abstract = "The In0.82Ga0.18As grown on InP (1 0 0) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with two-step growth method was investigated. It was analyzed that the effect of In content of buffer layer on the crystalline quality and electrical property of the In0.82Ga0.18As eplialyers, which were characterized by X-ray diffraction, scanning electron microscopy, and Hall effect. The experiments show that the crystalline quality and the electrical property of the In0.82Ga0.18As eplialyers have close relation to the In content of buffer layer and will be optimum when the In content of buffer layer is same as that of the epilayer."
}
@article{Lu2007401,
title = "Bias-tunable electron–spin polarization in an antiparallel double -magnetic-barrier nanostructure",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "401 - 405",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000201",
author = "Mao-Wang Lu and Gui-Lian Zhang and Yong-Hong Kong",
keywords = "Spintronics",
keywords = "Spin polarization",
keywords = "Spin filtering",
keywords = "Magnetic quantum structure",
abstract = "We present a theoretical study of spin-dependent electron transport in an antiparallel double δ -magnetic-barrier nanostructure with an applied bias. It is shown that large spin-polarized current can be achieved in such a device with unidentical strength between two δ -magnetic-barriers. It also is shown that the degree of electron–spin polarization is strongly dependent upon the applied bias. These interesting properties may provide an alternative scheme to spin-polarize electrons into semiconductors, and this device may be used as a bias-tunable spin filter."
}
@article{Gabriel2007406,
title = "Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "406 - 415",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.008",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600276X",
author = "Gemma Gabriel and Ivan Erill and Jaume Caro and Rodrigo Gómez and Dolors Riera and Rosa Villa and Philippe Godignon",
keywords = "Biosensor",
keywords = "Fracture toughness",
keywords = "In vitro test",
keywords = "Mechanical properties",
keywords = "Silicon",
keywords = "Silicon carbide",
abstract = "Abstract
Semi-insulating silicon carbide (SiC) is a fully processable semiconductors substrate that is commonly used as an alternative to conventional silicon (Si) in high-power applications. Here we examine the feasibility of using SiC as a substrate for the development of minimally invasive multi-sensor micro-probes in the context of organ monitoring during transplantation. In particular, we make a thorough comparison of Si and SiC material mechanical and electrical properties, and we extend this analysis to life-like situations using completed devices. Our results show that SiC outperforms Si in all respects, with a four times higher modulus of rupture for SiC devices and a 10-fold increase in the frequency range for electrical measurements in SiC-based probes. These results suggest that SiC should be preferably used over Si in all biomedical applications in which device breakage must be avoided or very precise electrical measurements are required."
}
@article{Cho2007416,
title = "Design and fabrication of a vibration sensor using a conductive ball",
journal = "Microelectronics Journal",
volume = "38",
number = "3",
pages = "416 - 421",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2007.01.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000195",
author = "Yong-Soo Cho and Sung-Wook Jang and Young-Soo Sohn and Sie-Young Choi",
keywords = "Vibration sensor",
keywords = "Conductive ball",
keywords = "MEMS",
keywords = "Convex corner rounding",
abstract = "We have fabricated a MEMS-based vibration sensor with a conductive ball. The vibration sensor consisted of a conductive ball placed in a 600 μm deep anisotropically micromachined silicon cavity, two electrodes on the non-planar surface, and a cover glass for encapsulation. Before Au film deposition, the sharp convex corner at the upper edge of the cavity was rounded to deposit the metal film without disconnecting on the non-planar surface. The shadow-mask technique allowed for the simultaneous metal deposition and patterning on three-dimensional structures without the conventional photolithography. The frequency responses of the proposed MEMS-based vibration sensor using a conductive ball ranging from 0 to 30 Hz were stable."
}
@article{tagkey2007CO2,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "CO2 - ",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(07)00004-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269207000043",
key = "tagkey2007CO2"
}
@article{Marta2007149,
title = "Thermal investigations of integrated circuits in systems at THERMINIC’05",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "149 - 150",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002886",
author = "Marta and Rencz"
}
@article{Mateo2007151,
title = "Electrical characterization of analogue and RF integrated circuits by thermal measurements",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "151 - 156",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001972",
author = "D. Mateo and J. Altet and E. Aldrete-Vidrio",
keywords = "Analogue integrated circuits",
keywords = "RF testing",
keywords = "Analogue testing",
keywords = "Thermal testing",
keywords = "Temperature measurements",
abstract = "This paper presents a novel technique for measuring the electrical characteristics of analogue circuits, based on measuring the temperature at the silicon surface close to the circuit under test. As a detailed example, the paper analyses how the gain of an amplifier can be observed through temperature measurements. Experimental results validate the feasibility of the technique. Simulated results show how this technique can be used to measure the bandwidth and central frequency of a 2.4 GHz low noise amplifier (LNA) designed in a 0.35 μm standard CMOS technology."
}
@article{Hu2007157,
title = "Mechanism and thermal effect of delamination in light-emitting diode packages",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "157 - 163",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001960",
author = "Jianzheng Hu and Lianqiao Yang and Moo Whan Shin",
keywords = "Delamination",
keywords = "Thermal resistance",
keywords = "Thermo-mechanical stress",
keywords = "Light-emitting diode",
abstract = "This work reports on the mechanism of delamination in light-emitting diode (LED) packages and its effects on thermal characteristics of LEDs. The LED samples were subjected to moisture preconditioning followed by heat block testing. Transient thermal measurements were performed to investigate the thermal behavior of the delaminated LEDs. Increase of thermal resistance with the degree of delamination was observed from the transient measurement. The thermo-mechanical and hygro-mechanical stress distributions calculated from coupled-field FEA simulation agree well with the micrographical evidence. It was found that the thermo-mechanical stress plays more important role than the hygro-mechanical stress for the development of delamination in the LED packages. Moisture preconditioning for 3 and 6 h under 85 °C/85RH conditions was found to make little contribution to the delamination between the chip and lead frame."
}
@article{Belaïd2007164,
title = "Reliability study of power RF LDMOS device under thermal stress",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "164 - 170",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.08.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001984",
author = "M.A. Belaïd and K. Ketata and K. Mourgues and M. Gares and M. Masmoudi and J. Marcon",
keywords = "Simulation",
keywords = "Hot carrier effects",
keywords = "LDMOS",
keywords = "Thermal stress",
abstract = "This paper presents the results of comparative reliability study of two accelerated ageing tests for thermal stress applied to power RF LDMOS: Thermal Shock Tests (TST, air–air test) and Thermal Cycling Tests (TCT, air–air test) under various conditions (with and without DC bias, TST cold and hot, different extremes temperatures ΔT). The investigation findings of electrical parameter degradations after various ageing tests are discussed. On-state resistance (Rds_on) is reduced by 12% and feedback capacitance (Crss) by 24%. This means that the tracking of these parameters enables to consider the hot carrier injection as dominant degradation phenomenon. To reach a better understanding of the physical mechanisms of parameter's shift after thermal stress, a numerical device model (2D, Silvaco-Atlas) was used to confirm degradation phenomena."
}
@article{Kimura2007171,
title = "Proposal of a new structural thermal vacuum sensor with diode-thermistors combined with a micro-air-bridge heater",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "171 - 176",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002035",
author = "Mitsuteru Kimura and Fumitoshi Sakurai and Hirao Ohta and Tomoyuki Terada",
keywords = "Thermal sensor",
keywords = "Vacuum sensor",
keywords = "Temperature sensor",
keywords = "Microheater",
keywords = "SOI",
keywords = "Pn junction",
abstract = "New structural Pirani gauge-type thermal vacuum sensor with a microheater and two pn junction diodes, Th-A and Th-B, as a high-sensitive temperature sensor working like a thermistor formed on a micro-air-bridge (MAB) is proposed. The MAB is separated into two regions of A and B. The Th-A and the Th-B can measure temperatures of the region A and the region B connected to the region A with thermal resistance, respectively. The microheater is formed in the region A and can maintain its temperature by feedback control. The diode-thermistor, Th-C, formed on the SOI substrate is provided to measure the ambient temperature Tc. Principle of this Pirani gauge-type thermal vacuum sensor is based on the measurement of the pressure-dependent thermal conductivity of gaseous media due to the heat exchange between the heated MAB (suspended film) and surrounding gas in vacuum. This has more than two orders of magnitude measurable pressure range (2×10−3–1×105 Pa) compared with traditional Pirani vacuum sensor, and has very fast response and low power consumption."
}
@article{Janicki2007177,
title = "Thermal analysis of layered electronic circuits with Green's functions",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "177 - 184",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002576",
author = "Marcin Janicki and Gilbert De Mey and Andrzej Napieralski",
keywords = "Electronic circuit thermal simulation",
keywords = "Heat equation",
keywords = "Green's function solution",
abstract = "This paper presents a method for thermal simulation of electronic circuits using an analytical solution of the three-dimensional heat equation resulting from an appropriate circuit thermal model. The temperature fields in multilayered structures are computed analytically employing the Green's functions solution method. The entire solution methodology is illustrated in detail on the particular examples of electronic circuits containing multiple heat sources. Compared to the previous papers published by the authors, the method has been extended by including the possibility of simulating imperfect layer contacts. The simulation results are validated with infra-red measurements and results obtained using other methods. Additionally, the discussion of simulation errors caused mainly by different non-linear phenomena is included."
}
@article{Bagnoli2007185,
title = "Validation of the DJOSER analytical thermal simulator for electronic power devices and assembling structures",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "185 - 196",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002357",
author = "Paolo Emilio Bagnoli and Carlo Bartoli and Fabio Stefani",
keywords = "Electronics",
keywords = "Power",
keywords = "Temperature",
keywords = "Analytical",
keywords = "Simulation",
abstract = "The present communication deals with the tests for the validation of the DJOSER steady-state thermal simulation program, purposely designed for power electronic assembling structures and which is based on the resolution of analytical relationships. The validation experiments were carried out theoretically by comparing the thermal maps with those obtained using standard finite-elements programs and yielding temperature accuracy below 1%. Experimental tests were also performed on purposely built multi-layer structures and industrial circuits with power diodes mounted in naked-chip configuration. The simulated maps were compared with accurate thermo-graphic recordings and showed a good agreement, testifying the validity of the mathematical model."
}
@article{Wang2007197,
title = "Voltage-to-frequency converter with high sensitivity using all-MOS voltage window comparator",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "197 - 202",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002874",
author = "Chua-Chin Wang and Tzung-Je Lee and Chi-Chen Li and Ron Hu",
keywords = "Voltage window comparator",
keywords = "Voltage-to-frequency converter",
keywords = "CMOS",
keywords = "Voltage detection",
abstract = "A high-sensitivity voltage-to-frequency converter (VFC) using an all-MOS voltage window comparator is presented in this work. The circuit is composed of one voltage-to-current converter, one charge and discharge circuit, and one all-MOS voltage window comparator. The input voltage is converted into a current which in turn triggers the charge and discharge circuit, where a built-in capacitor is driven. The voltage window comparator monitors the variated voltage on the capacitor and generate an oscillated output of which the vibration frequency is linearly dependent to the input voltage. In this way, the worst-case linear range of the output frequency of the proposed VFC is 0–55.40 MHz verified by simulations given a 0–0.9 V input range. The physical measurement of the proposed VFC shows a 0–52.95 MHz output frequency given a 0–0.9 V input range. The error in linearity is better than 8.5% while the power dissipation is merely 0.218 mW."
}
@article{Wang2007203,
title = "Optimization of gray-scale performance in pixellated-metal-mirror FLC-OASLM by equivalent circuit model",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "203 - 209",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002862",
author = "Meng-yao Wang and Wei Pan and Bin Luo and Wei-li Zhang and Xi-hua Zou",
keywords = "Ferroelectric liquid crystal (FLC)",
keywords = "Optically addressed spatial light modulator (OASLM)",
keywords = "Pixellated-metal mirror",
keywords = "Equivalent circuit model",
keywords = "Gray-scale performance",
keywords = "Intensity transfer characteristic",
abstract = "An equivalent circuit model of a pixellated-metal-mirror ferroelectric liquid crystal (FLC) optically addressed spatial light modulator (OASLM) is proposed. Using both structure and FLC material parameters of a real device and real material as the simulation parameters, the model is firstly confirmed by good agreement of simulation results and the reported experimental ones, and then utilized to optimize gray-scale performance of the OASLM. The model is developed from an improved FLC equivalent circuit, and has the ability to describe the voltage dropped across the modulating layer and to predict how optical outputs vary over time with the input drive voltage and control image. Simulation results indicate that gray-scale performance of the OASLM is highly dependent on write pulse width. More than 10 gray scales are observed when write pulse width is 100 μs and the number reduces to four when it reaches 500 μs. Other parameters of drive voltage can be set to adjust the region of write light intensity over which gray scales are best produced, and write pulses are found to be primary at high write light intensities, whereas erase pulses are dominant at low write light intensities. Furthermore, although gray-scale performance is weakly dependent on erase-light intensity, the erase light is necessary to ensure a proper erasure of the device and at least 1 mW/cm2 is required in this study."
}
@article{Liu2007210,
title = "A piezoresistive microcantilever magnetic-field sensor with on-chip self-calibration function integrated",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "210 - 215",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002850",
author = "Jian Liu and Xinxin Li",
keywords = "Silicon cantilever",
keywords = "Magnetometer",
keywords = "Piezoresistance",
keywords = "Self-calibration",
keywords = "Micromachining",
abstract = "A micromachined piezoresistive cantilever magnetometer, with a self-calibration function on-chip integrated is presented . When the cantilever is subjected to a magnetic field to be measured, the magnetic force will exert upon the magnetized nickel thin-film pattern that is located at the cantilever end. The magnetic force bends the micromechanical cantilever, which is further read out by an integrated piezoresistor. For realizing the self-calibration function, an aluminum spiral is integrated around the cantilever to provide an artificial magnetic field, when an electric current flows through the spiral coil. The artificial magnetic field can be used to drive the cantilever bending and causes a self-calibration output signal. With this on-chip self-calibration scheme, the detection of magnetic field can be immune to the long-term drift in remanence of the magnetized nickel pattern, thereby, improving the sensing stability. Bulk micromachining technologies are used to fabricate the sensors. The formed sensor is used for magnetic-field measurement, resulting in the piezoresistive sensitivity as 1.06×10−4/mT and the sensing resolution 4.58 μT."
}
@article{Karimi2007216,
title = "Numerical optimization of an extracted HgCdTe IR-photodiodes for 10.6-μm spectral region operating at room temperature",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "216 - 221",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002825",
author = "M. Karimi and M. Kalafi and A. Asgari",
keywords = "HgCdTe multi-junction photodiodes",
keywords = "Long-wavelength infrared photodetector (LWIR)",
keywords = "Device simulation",
abstract = "The electrical and photoelectrical properties of long wavelength n ̲ + p p ̲ + Hg1−xCdxTe structures have been optimized by using an exact numerical analysis. In this analysis we have been taking into account the degeneracy, non-parabolicty, deviation from thermodynamical equilibrium and graded interfaces. The band diagram, electrical field, carrier mobility, photoelectrical gain, responsivity, noise and detectivity have been calculated and optimized as a function of different variable such as alloy composition, doping concentration, thickness, and applied voltage to obtain optimized performance at room temperature. This numerical simulation can be used to optimize the mentioned parameters for other structures such as n ̲ + n p ̲ + , n ̲ + p operating in photodiode, or photovoltaic mode."
}
@article{You2007222,
title = "Ag(Ta,Nb)O3 thin-film interdigital capacitors for microwave applications",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "222 - 226",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002801",
author = "Hee-Wook You and Jung-Hyuk Koh",
keywords = "Pulsed laser deposition (PLD)",
keywords = "AgTaNbO3 (ATN)",
keywords = "Film",
abstract = "Epitaxial silver tantalate-niobate Ag(Ta,Nb)O3 (ATN) films have been grown on LaAlO3(0 0 1) single crystals by pulsed laser ablation of stoichiometric AgTa0.38Nb0.62O3 ceramic target. Extensive X-ray diffraction analysis reveals epitaxial relationship between the ATN film and LaAlO3(0 0 1) substrate. Micrometer size interdigital capacitor structures have been defined photolithographically on the top surface of ATN films. ATN/LaAlO3 thin-film capacitors exhibit superior overall performance: loss tangent as low as 0.0033 at 1 MHz, dielectric permittivity 224 at 1 kHz, weak frequency dispersion of 5.8% in 1 kHz to 1 MHz range. Dielectric permittivity and loss tangent were also measured at the microwave range. Conformal mapping techniques were employed to extract dielectric properties of ATN film on substrate at the microwave frequency range. Theoretical properties of conformal mapping techniques for interdigital capacitors and CPW microstrip lines were discussed."
}
@article{Cheong2007227,
title = "Effects of precursor aging and post-deposition treatment time on photo-assisted sol–gel derived low-dielectric constant SiO2 thin film on Si",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "227 - 230",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002795",
author = "K.Y. Cheong and F.A. Jasni",
keywords = "Sol-gel",
keywords = "Low-dielectric constant thin film",
keywords = "Fourier-transform infrared",
abstract = "In this paper, we have reported the results of sol–gel derived low dielectric constant SiO2 treated with UV light as a function of precursor aging time and post-deposition UV exposure time. Filmetrics, Fourier-transform infrared, and scanning electron microscope were employed to characterize the films. Precursor aged for the longest time (4 days) has demonstrated the lowest refractive index, which can be related to reduction of dynamic dielectric constant (ke). However, when the UV exposure time increased, the ke value also increased. These observations have been explained in the text."
}
@article{Sun2007231,
title = "The electroluminescent investigation of double layer Eu-complex organic electronic luminescence diodes",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "231 - 234",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002771",
author = "X.Y. Sun and W.L. Li and Z.R. Hong",
keywords = "OLEDs",
keywords = "Eu-complex",
keywords = "Efficiency",
keywords = "Emission spectra",
abstract = "Double layer organic electronic luminescence diodes (OLEDs) based on europium(dibenzoylmethanato)3monophenanthroline [Eu(DBM)3bath], ITO/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD)/Eu(DBM)3bath/LiF/Al have been fabricated. With increasing the thickness of hole transporting layer, the maximum EL efficiency was increased, and the EL efficiency of 10 cd/A was achieved when the thickness of TPD layer was 80 nm; however, at high current density, the EL efficiency of all devices was decreased drastically. Besides, the evolution of EL emission spectra with increasing operating voltage was found, the mechanisms of the symmetry around the ion improved and the annihilation of excited state of Eu(DBM)3bath were discussed in explaining this phenomenon."
}
@article{Sofianos2007235,
title = "Design of quantum filters with pre-determined reflection and transmission properties",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "235 - 244",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002679",
author = "S.A. Sofianos and G.J. Rampho and H. Azemtsa Donfack and I.E. Lagaris and H. Leeb",
keywords = "Microelectronics",
keywords = "Nanostructures",
keywords = "Quantum wells",
keywords = "Heterostructures",
keywords = "Inverse scattering",
abstract = "A method based on the solution of the one-dimensional single channel inverse scattering is proposed for the design of quantum filters having specific reflection and transmission properties. The inversion procedure allows one, via modifications of a prefabricated prototype system, to reach the desired filter properties. The feasibility of the method is demonstrated on several examples, where filter properties are requested in different energy ranges. The shape and range of the corresponding potential are smooth and therefore they render themselves to applications in microelectronics, nanostractures and in quantum devices."
}
@article{Sahu2007245,
title = "Improved properties of Al-doped ZnO film by electron beam evaporation technique",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "245 - 250",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002667",
author = "D.R. Sahu and Shin-Yuan Lin and Jow-Lay Huang",
keywords = "Al-doped ZnO",
keywords = "Electron beam evaporation",
keywords = "Optical and electrical properties",
abstract = "High-quality Al-doped ZnO (AZO) thin films have been fabricated by electron beam evaporation technique. The effect of the growth temperature on the optical and electrical properties of the electron-beam (e-beam) evaporated AZO film is investigated. X-ray diffraction measurements have shown that e-beam evaporated films are highly c-axis oriented at appropriate growth temperature. Transmittance measurement showed that the best optical and structural quality of the e-beam evaporated AZO film occurred at 200 °C. The scanning electron microscope images have shown that the surfaces of the e-beam evaporated AZO became smoother for the growth temperature at and above 200 °C. Finally, the maximum electrical resistivity of 2.5×10−4 Ω cm and optical transmittance of more than 85% has been found at 200 °C growth temperature, which explains its relation with the crystal quality of the film."
}
@article{Lin2007251,
title = "Simulation and analysis of metamorphic high electron mobility transistors",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "251 - 254",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002655",
author = "Jia-Chuan Lin and Po-Yu Yang and Wei-Chih Tsai",
keywords = "High electron mobility transistor",
keywords = "Metamorphic high electron mobility transistor",
keywords = "Pseudo morphic high electron mobility transistor",
keywords = "δ-doping",
keywords = "MEDICI",
abstract = "In this paper, the metamorphic high electron mobility transistors (mHEMTs) are investigated numerically and compared with pseudo-morphic high electron mobility transistors (pHEMTs). The two-dimensional device simulator, MEDICI, is used to solve the Poisson's equation and the electron/hole current continuity equations. The influences of δ-doping concentration and position, gate width, spacer thickness, etc. on the performances of HEMTs are explored. It shows clearly that mHEMTs have higher transconductances, drain currents and DC voltage swings than pHEMTs."
}
@article{Zhou2007255,
title = "Surface characterization of epitaxial lateral overgrowth of InP on InP/GaAs substrate by MOCVD",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "255 - 258",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002643",
author = "J. Zhou and X.M. Ren and Q. Wang and D.P. Xiong and H. Huang and Y.Q. Huang",
keywords = "Epitaxial lateral overgrowth (ELO)",
keywords = "Metalorganic chemical vapor (MOCVD)",
keywords = "InP",
keywords = "Competition effect",
abstract = "Epitaxial lateral overgrowth (ELO) of InP on InP/GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was investigated. The lateral overgrowth InP layers were obtained on the SiO2 masked InP seed layer, which was deposited on the (1 0 0) GaAs substrate by the two-step method. The surface characterization of overgrowth InP was dependent on the V/III ratio, the mask width and the growth time. When decreasing the V/III ratio or reducing the mask width respectively, the sidewalls “competition effect” was obviously observed. After a longer time, new (1 0 0)-like top surfaces were formatted because of the precursors migrating from the sidewall facets to the (1 0 0) top surfaces. The experimental findings will be explained by growth kinetics in conjunction with the different dominant source supply mechanism."
}
@article{Wang2007259,
title = "The dielectric constant of materials effect the property of the OLED",
journal = "Microelectronics Journal",
volume = "38",
number = "2",
pages = "259 - 261",
year = "2007",
note = "2005 Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002631",
author = "Fangcong Wang and Su Liu and Chunlin Zhang",
keywords = "OLED",
keywords = "Dielectric constant",
abstract = "Several important materials have been used for the electron injection layer (EIL) of the organic light-emitting devices (OLEDs), such as LiF, NaCl, NaF, Al2O3, SiO2, Si3N4, MgO, etc. LiF is the most usually used in OLED among these materials for its performance in OLED. The dielectric constant of LiF, NaCl, NaF is 9.036, 5.895 and 5.072, respectively, at 300 K [J. Fontanella, C. Andeen, D. Schuele, Phys. Rev. B 6 (1972) 582]. The thin film of these insulting layers here supply a very strong electric field to enhance the electrons injection and limit the holes injection to the emitting layer (EL). Then we kept the balance of the injected electrons and the holes, and then we got the excellent performing OLEDs."
}
@article{tagkey2007CO2,
title = "IFC: Editorial board",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "CO2 - ",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00270-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002709",
key = "tagkey2007CO2"
}
@article{Lei20071,
title = "Color rendering and luminous efficacy of trichromatic and tetrachromatic LED-based white LEDs",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "1 - 6",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002047",
author = "Zhang Lei and Guo Xia and Liang Ting and Gu Xiaoling and Lin Qiao Ming and Shen Guangdi",
keywords = "White light-emitting diode",
keywords = "Trichromatic",
keywords = "Tetrachromatic",
keywords = "Luminous efficacy",
keywords = "Color rendering",
abstract = "White light-emitting diode (LED) spectra for general lighting should be designed for high luminous efficacy as well as good color rendering, which are generally in a trade-off relationship. White LEDs have uncountable metameres, they have different luminous efficacy and color rendering. Appropriate designed trichromatic and tetrachromatic LED-based white LEDs are presented that have acceptable color rendering as well as good luminous efficacy. Triachromatic white LEDs, with a wavelength combination of 460, 540, and 615 nm, offer high general color rendering index exceeding 89, and luminous efficacy 336 lm/W. The general color rendering index of tetrachromatic LED-based white LEDs combined from 460, 525, 590, and 640 nm is 95, the luminous efficacy is 306 lm/W. Further analysis shows the changing trends of the luminous efficacy, color rendering and the chromaticity coordinate of the optimized trichromatic and tetrachromatic white LEDs depending on the wavelength shift of the primary LEDs. For the optimized trichromatic white LEDs, both the luminous efficacy and color rendering change more with the wavelength shifts of the primary red LEDs than with the wavelength shifts of the blue and green LEDs. For the optimized tetrachromatic white LEDs, the changes of the luminous efficacy caused by the wavelength shifts of one red LED are smaller than the changes of trichromatic white LEDs. And the wavelength shifts of the red primary LED that have shorter wavelength affect the color rendering more than the other primary LEDs. The wavelength shifts of the blue primary LED change the chromaticity coordinate of the white LEDs more. The small changes of the chromaticity coordinate of the white LED do not mean small changes of the k and Ra."
}
@article{Benbakhti20077,
title = "Physical study of the dissipated power area in high electron mobility transistors for thermal modelling",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "7 - 13",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.025",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001935",
author = "B. Benbakhti and M. Rousseau and J.-C De Jaeger",
keywords = "HEMTs",
keywords = "2D-hydrodynamic model",
keywords = "Thermal modelling",
abstract = "The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a thermal modelling giving the temperature everywhere in the device [J. Park, M.-W Shin, C.-C. Lee, Thermal modeling and measurement of GaN-based HFET devices, IEEE Electron Device Lett. 24(7) (2003) 424–426 [1]; J.-C Jacquet, R. Aubry, H. Gérard, E. Delos, N. Rolland, Y. Cordier, A. Bussutil, M. Rousseau, S.L. Delage, Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 12th GAAS Symposium, Amsterdam, 2004, pp. 235–238 [2].]. The method is applied to HEMTs (high electron mobility transistors) based on GaAs or GaN. It is shown that the hot area depends on the bias conditions and on the transistor gate recess topology."
}
@article{JeanFrançois200714,
title = "A novel concept for optoelectronic nanotransistor design",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "14 - 19",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002424",
author = "Jean-François and Eloy",
keywords = "Optoelectronic subwavelength",
keywords = "Quantum mechanics",
keywords = "Semirefractor Coulombian box",
keywords = "Uncertainty principle",
abstract = "Considering the new features and particular quantum properties of nanooptoelectronics components, the revision of the traditional analytical approach to model analytically is made indispensable. A novel approach leads to take into account quasi-virtual electrons trapped in nanometric space cells with high discontinuities of potential. Another strong difficulty to overcome is existing: the strong difference of scales between the wavelength of the focusing laser spot size (currently close to the micrometer range) and the nanostructures sizes (close to the nanometer range). A recent breakthrough in the studies of diffraction limits affords the possibility to produce a subwavelength light source with high transmission through arrays in metallic screen. Thanks to some recent works [T.W. Ebbesen, H.J. Lezec, H.F. Ghaemi, T. Thio, P.A. Wolff, Extraordinary optical transmission through subwavelength hole arrays, Nature 391 (1998) 667–669. A. Degiron, T.W. Ebbesen, The role of localized surface plasmon modes in the enhanced transmission of periodic subwavelength apertures, J. Opt. A: Pure Appl. Opt. (2005) S90–S96. J. Xu, T. Xu, J. Wang, Q. Tian, Design tips of nanoapertures with strong field enhancement and proposal of novel L-shaped aperture, Opt. Eng. 44(1) (2005)], we intend to consider the physical possibility of applications involving a violation of the Bethe diffraction law. With the aim to implement the generation of a photon–plasmon–polariton (SPPs) interaction [J. Xu, T. Xu, J. Wang, Q. Tian, Design tips of nanoapertures with strong field enhancement and proposal of novel L-shaped aperture, Opt. Eng. 44(1) (2005). J.-F. Eloy, Mise en évidence d’une anisotropie d’absorption multiphotonique dans des monocristaux organiques ‘HMX et RDX) et approche théorique, Réactivité et cinétique réactionnelle, Ann. Chim. Fr. 16 (1991) 1–39] liable to the physical conditions to generate this particular electromagnetic phenomenon, we conceived of a particular layout. This optoelectronics component is equipped with subwavelength apertures (typically 100 nm of diameter) bored in a metallic (Ag or Cr) thin film screen to reduce drastically the focused laser beam spot in order to illuminate the photoconducting gap between two nanotubes (e.g. polycarbon walls).
To master the main theoretical and technological difficulties, a new optoelectronic concept of nanotransistor is proposed. This system involves a metal-oxide-semiconductor field effect transistor (MOSFET) augmented with a nanoscale cell consisting of a ‘Coulombian box’ controlled by a laser photoconducting switch. In order to preserve the different electronic functions such as the potential barriers, the implementation of semirefractors [J.-F. Eloy, M.Y. Depeyrot, Nanometer range: a new theoretical challenge for microelectronics and optoelectronics, Microelectron. J. 37(7) (2006) 630–634] such as polycrystal diamond monolayers is commendable."
}
@article{Kadlečíková200720,
title = "Microwave and hot filament chemical vapour deposition of diamond multilayers on Si and WC–Co substrates",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "20 - 23",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002412",
author = "M. Kadlečíková and M. Vojs and J. Breza and M. Veselý and Z. Frgala and M. Michalka and J. Matějková and A. Vojačková and T. Daniš and M. Marton",
keywords = "Chemical vapour deposition",
keywords = "Nanocrystalline diamond",
keywords = "Raman spectroscopy",
keywords = "Scanning electron microscopy",
abstract = "A serious problem in the use of chemical-vapour-deposited polycrystalline diamond coatings in electronics, optics as well as in cutting tools is the high surface roughness. In our work, microcrystalline and nanocrystalline diamond films with a thickness of 0.5–5 μm were deposited using microwave chemical vapour deposition (MW CVD), and with a thickness of 1–4 μm by hot filament chemical vapour deposition (HF CVD). For both deposition technologies, we investigated the effect of a negative bias upon the formation of microcrystalline and nanocrystalline diamond multilayers. In the cases of smooth Si and relief WC–Co substrate surfaces, the multilayers were found to have a “cauliflower” look. The structure and composition of deposited layers were checked by scanning electron microscopy and Raman spectroscopy."
}
@article{ClóvesG200724,
title = "Hot-carrier relaxation in photoinjected ZnSe",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "24 - 26",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002400",
author = "Clóves G. and Rodrigues",
keywords = "II–VI semiconductors",
keywords = "Hot carriers",
keywords = "Optoelectronic devices",
abstract = "A theoretical investigation of the excess energy dissipation of highly excited photoinjected carriers in zinc selenide (ZnSe) is presented. The calculations are performed by solving numerically coupled quantum transport equations for the carriers and the optical phonons in order to derive the evolution of their nonequilibrium temperatures, dubbed quasitemperatures (or nonequilibrium temperatures). It is shown that the carrier energy dissipation occurs in a picosecond time scale."
}
@article{Wang200727,
title = "High-mobility pentacene thin-film transistors with copolymer-gate dielectric",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "27 - 30",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002394",
author = "Wei Wang and Jiawei Shi and Wenhai Jiang and Shuxu Guo and Hongmei Zhang and Baofu Quan and Dongge Ma",
keywords = "Thin-film transistors",
keywords = "Mobility",
abstract = "Pentacene thin-film transistors have been obtained using polymethyl-methacrylate-co-glyciclyl-methacrylate (PMMA–GMA) as the gate dielectric. The optimum active layer thickness in thin-film transistors (OTFTs) was investigated. The present devices show a wide operation voltage range. The on/off current ratio is as high as 105. In linear region ( V DS = - 2 V ), the field-effect mobility of device increases with the increase in gate field at low-voltage region ( V G < - 20 V ), and a mobility of 0.33 cm2/V s can be obtained when V G > - 20 V . In saturation region, the mobility increases linearly with the gate field, and a high mobility of 1.14 cm2/V s can be obtained at V G = - 95 V . The influence of voltage on mobility of device was investigated."
}
@article{Takeuti200731,
title = "Fabrication of silicon field-emission arrays using masks of amorphous hydrogenated carbon films",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "31 - 34",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002370",
author = "D.F. Takeuti and M.N. Tirolli and C.L. Danieli and M.A.R. Alves and E.S. Braga and P.H.L. de Faria",
keywords = "Field-emission devices",
keywords = "Amorphous hydrogenated carbon",
keywords = "Plasma etching",
abstract = "A fabrication process of silicon field-emission arrays is reported, in which thin films of amorphous hydrogenated carbon (a-C:H) are employed as masks in a two-step plasma-etching process, using pure SF6 and a mixture of SF6 and O2. In comparison with processes that involve SiO2 masks, the use of a-C:H improved the selectivity of the plasma etching, particularly in the case of pure SF6. An estimation of Utsumi's figure of merit showed that a significant enhancement in electric field can be achieved, as a result of the sharp tips fabricated through this process."
}
@article{Santos200735,
title = "High-voltage LDMOS transistors fully compatible with a deep-submicron 0.35 μm CMOS process",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "35 - 40",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002205",
author = "P.M. Santos and Vitor Costa and M.C. Gomes and Beatriz Borges and Mário Lança",
keywords = "High-voltage CMOS",
keywords = "MOSFET switch",
keywords = "LDMOS",
abstract = "This work presents the design of LDMOS transistors fully compatible with a standard CMOS process, only requiring mask layout manipulation. A conventional 0.35 μm CMOS process was elected to demonstrate the viability of the approach. The prototyped LDMOS transistor exhibits a breakdown voltage of 24 V, which represents an improvement of 31% when compared with the high-voltage extended-drain NMOS available in the process library, while other static parameters remain in the same range. Furthermore, this solution enables the CMOS integration of a high-voltage pass-transistor, as a consequence of the formation of an isolated lightly doped p-type region inside the n-well."
}
@article{Wu200741,
title = "Preparation of ultra fine nickel–copper bimetallic powder for BME-MLCC",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "41 - 46",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002187",
author = "Wu and Songping",
keywords = "Fine nickel–copper powders",
keywords = "Bimetallic powder",
keywords = "Chemical reduction",
keywords = "BME-MLCC",
abstract = "The preparation of ultra fine nickel–copper bimetallic powder with two-stage chemical reduction method was investigated. Reductive sugar and hydrazine hydrate were employed as reducing agent in different reductive stage, respectively. Reaction of CuSO4·5H2O with reductive sugar at 70 °C gives cuprous oxide and copper particles, then as-prepared mixture and nickelous hydroxide were reduced by hydrazine hydrate, and nickel–copper powder having excellent dispersibility was prepared. Influences of nickel added on composition and dispersibility of powder were studied. TG/DTG/DTA of nickel–copper powder, which is stable in room temperature, were discussed with thermal analyzer. Relation of nickel content to oxidation temperature was investigated. Ni–Cu bimetallic powder particles have a fully coated structure when nickel content is up to 30%. As-prepared nickel–copper powder was applied in base metal electrode-multilayer ceramic capacitor (BME-MLCC). The end termination has high adhesion force, fairly good densification, low resistivity, excellent solderibility behavior and resistance behavior to soldering."
}
@article{Li200747,
title = "Temperature and field-dependence of hopping conduction in organic semiconductors",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "47 - 51",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002175",
author = "Ling Li and Gregor Meller and Hans Kosina",
keywords = "Organic semiconductors",
keywords = "Hopping transport",
keywords = "Conductivity model",
keywords = "Percolation theory",
abstract = "Electrical characteristics of the hopping transport in organic semiconductors are studied theoretically. Based on percolation theory of hopping between localized states, an analytical mobility model is obtained. This model is applied to the analysis of both the electric field dependence and the temperature dependence of the mobility. The results agree quantitatively with recent experimental data."
}
@article{Campbell200752,
title = "Phase-change memory devices with stacked Ge-chalcogenide/Sn-chalcogenide layers",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "52 - 59",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002163",
author = "Kristy A. Campbell and Christopher M. Anderson",
keywords = "Phase-change memory",
keywords = "PCRAM",
keywords = "Non-volatile",
keywords = "GeTe",
keywords = "Ge2Se3",
keywords = "SnTe",
keywords = "SnSe",
keywords = "GST",
keywords = "Ge2Sb2Te5",
abstract = "Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested consisted of GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, most likely due to the voltage induced movement of either Sn or Te into the Ge-chalcogenide layer."
}
@article{Chan200760,
title = "Investigation into the influence of direct current (DC) power in the magnetron sputtering process on the copper crystallite size",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "60 - 62",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002151",
author = "Kah-Yoong Chan and Bee-San Teo",
keywords = "DC sputtering power",
keywords = "Copper",
keywords = "XRD",
keywords = "Crystallite size",
keywords = "Conductivity",
abstract = "This paper discusses the influence of direct current (DC) power in the magnetron sputtering process on the crystallite size of the copper (Cu) thin films deposited on p-type silicon substrate at room temperature. X-ray diffraction (XRD) and Karl Suss four-point probe were employed to study the film crystallinity and conductivity, respectively. From the analysis on the XRD patterns, high DC power enhances the Cu film crystallinity with larger crystallite size, which is deduced using Sherrer's formula. The behavior of the electrical property of the Cu films complies with the trend of the film crystallinity with DC power, in which the film conductivity increases with increasing DC power. We attribute these phenomena to the enhanced surface diffusion mechanism of the adatom during the sputtering deposition process, which improves the microstructure of the Cu film."
}
@article{Youssef200763,
title = "Characterization of LiTaO3 thin films fabricated by sol–gel technique",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "63 - 66",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600214X",
author = "S. Youssef and R. Al Asmar and J. Podlecki and F. Pascal Delannoy and Y. Zaatar and A. Foucaran",
keywords = "Lithium tantalite",
keywords = "Sol–gel",
keywords = "Structural properties",
keywords = "Optical measurements",
keywords = "Thermal analysis",
keywords = "Pyroelectric property",
abstract = "Lithium tantalite (LiTaO3) thin films have been fabricated by sol–gel technique and crystallized by RTA process. The effect of heating temperature on the structural properties of LiTaO3 is investigated. The thin films are characterized by means of X-ray diffraction, Raman spectroscopy and thermal analysis (DCA/DTA). After the optimization of the growth parameters of LiTaO3 prepared by sol–gel processing, the pyroelectric property of LiTaO3 thin films deposited on Si (1 0 0) substrates have been also investigated."
}
@article{Wan200767,
title = "Recent advances in modeling the underfill process in flip-chip packaging",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "67 - 75",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002138",
author = "J.W. Wan and W.J. Zhang and D.J. Bergstrom",
keywords = "Model",
keywords = "Underfill flow",
keywords = "Flip-chip packaging",
abstract = "Flip-chip underfill process is a very important step in the flip-chip packaging technology because of its great impact on the reliability of the electronic devices. In this technology, underfill is used to redistribute the thermo-mechanical stress generated from the mismatch of the coefficient of thermal expansion between silicon die and organic substrate for increasing the reliability of flip-chip packaging. In this article, the models which have been used to describe the properties of underfill flow driven by capillary action are discussed. The models included apply to Newtonian and non-Newtonian behavior with and without the solder bump resistance for the purpose of understanding the behavior of underfill flow in flip-chip packaging."
}
@article{DK200776,
title = "Effects of post-thermal treatment on the properties of rf reactive sputtered ITO films",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "76 - 79",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002126",
author = "D.K. and Maurya",
keywords = "ITO",
keywords = "Annealing",
keywords = "Optical transmission",
abstract = "Indium tin oxide (ITO) thin film prepared by rf sputtering at various Ar–O2 mixtures, were annealed at several temperatures. The electrical, optical and structural properties of the film were systematically investigated before and after post-thermal treatment. The influence of a reactive gas (O2) on the sputtering rate of a metallic (indium/tin) alloy target was also investigated. The films were characterized by X-ray diffraction (XRD) measurement, scanning electron microscopy, and transmittance as a function of wavelength. The resistivity of 8.3×10−4 Ω cm has been achieved for the film thickness of 250 nm, deposited in pure Ar at room temperature (RT)."
}
@article{Yu200780,
title = "Spin–orbit splitting dependent resonant third-order nonlinear optical susceptibility in InGaN/GaN multiple quantum wells",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "80 - 86",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002114",
author = "Youqing Yu and Fei Gao and Guiguang Xiong",
keywords = "Optical properties of quantum well",
keywords = "Optical susceptibility",
keywords = "Spin-orbit split-off energy",
abstract = "For the transition between valence band and conduction band, the third-order nonlinear optical susceptibility χ(3) for degenerated four-wave mixing in InxGa1−xN/GaN multiple quantum wells (MQWs) has been calculated. The contributions of spin–orbit split-off energy to the resonant third-order nonlinear optical susceptibility of the modes, whose polarization is vertical to the [0 0 1] direction of the MQWs, are discussed in detail. The correlations between the peaks of χ(3), which are due to the transitions from the spin–orbit split-off energy level to first conduction subband, and the width of the quantum well and the constituents of the semiconductor material are obtained."
}
@article{Wu200787,
title = "Micro-Raman spectroscopy measurement of stress in silicon",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "87 - 90",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002102",
author = "Xiaoming Wu and Jianyuan Yu and Tianling Ren and Litian Liu",
keywords = "Stress measurement",
keywords = "Raman spectroscopy",
abstract = "Understanding microscale stress characterization of integrated circuits and micro-electro-mechanical systems (MEMS) structures is essential for the successful design and operation of the devices. In this paper, we introduce the use of Raman spectroscopy to measure the stress in single-crystal silicon. The constant coefficient between stress and Raman shift was measured, which is −462 in our experiment case. The effect of laser heating of the sample was studied and discussed. Normally, low laser power should be used on the stress measurement."
}
@article{ElNahass200791,
title = "Fabrication and electrical characterization of p-NiPc/n-Si heterojunction",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "91 - 95",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002096",
author = "M.M. El-Nahass and K.F. Abd-El-Rahman and A.A.A. Darwish",
keywords = "Phthalocyanines",
keywords = "Organic/inorganic heterojunctions",
abstract = "Nickel–phthalocyanine (NiPc) thin film was prepared by thermal evaporation method on n-Si single-crystal substrate to fabricate p-NiPc/n-Si heterojunction. The electrical transport properties of the p-NiPc/n-Si heterojunctions were investigated by temperature-dependent current–voltage (I–V) measurements and room temperature capacitance–voltage (C–V) measurements. The temperature-dependent I–V characteristics revealed that the forward conduction was determined by thermionic-emission and space-charge-limited current (SCLC) mechanisms at low and high voltage, respectively⋅ On the other hand, the reverse current is limited by the carrier generation process. The 1/C2–V plot indicated the junction was abrupt and the junction built-in potential was 0.61 V at room temperature."
}
@article{Missaoui200796,
title = "Structural characterisation of CdS layers deposited on porous p-type GaAs",
journal = "Microelectronics Journal",
volume = "38",
number = "1",
pages = "96 - 101",
year = "2007",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.09.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002084",
author = "Ali Missaoui and Lotfi Beji and Mounir Gaidi and Zina Harrabi and Hafedh Ben Ouada and Abdelaziz Bouazizi",
keywords = "Porous GaAs",
keywords = "Vacuum evaporation",
keywords = "CdS",
keywords = "X-ray diffraction",
keywords = "SEM",
keywords = "AFM",
abstract = "The purpose of this paper is to investigate the initial stage of cadmium sulphide (CdS) layer deposited on porous p-type GaAs substrate by vacuum evaporation technique. The deposited CdS layer was investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM imaging shows that the CdS was penetrated deeply in the porous structure down to the bottom and reaching the interface GaAs/porous GaAs. The AFM image demonstrates that the CdS deposited are grains of several nanometres and XRD patterns exhibit that the deposited layer has a hexagonal prominent phase."
}
@article{tagkey2006CO2,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "CO2 - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00247-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002473",
key = "tagkey2006CO2"
}
@article{Mohamed20061425,
title = "Sixth International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2006)",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1425 - 1426",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000887",
author = "Mohamed and Henini"
}
@article{Mlinar20061427,
title = "Theoretical study of InAs/GaAs quantum dots grown on [11k] substrates in the presence of a magnetic field",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1427 - 1429",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000899",
author = "V. Mlinar and F.M. Peeters",
keywords = "Quantum dots",
keywords = "High index surfaces",
keywords = "K.p theory",
keywords = "Magnetic field",
abstract = "Eight-band k.p theory including strain and piezoelectric effects are employed to calculate the strain distribution and electron and hole energy levels of InAs/GaAs quantum dots grown on [11k] substrates in the presence of an external magnetic field. Height of the dot determines how the increasing of k influences isotropic part of the strain tensor while biaxial part of the strain tensor is always reduced with increasing k. Because of the reduced symmetry of high index surfaces, influence of piezoelectric effect on the electronic structure becomes more dominant with increasing k. Electron energy levels are influenced by the isotropic part of the strain compared to the hole energy levels, where strong heavy hole–light-hole mixing is observed. For the dots grown on the [11k] surfaces magnetic field has smaller influence on the electron and hole energy levels as compared to the referent case."
}
@article{Groenen20061430,
title = "When sound meets quantum dots",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1430 - 1435",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.027",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000905",
author = "J. Groenen and F. Poinsotte and A. Zwick and A. Mlayah",
keywords = "Raman scattering",
keywords = "Quantum dots",
keywords = "Acoustic phonons",
keywords = "Interferences",
abstract = "THz acoustic phonons have wavelengths in the nm range and can be used as internal probes to investigate self-assemble quantum dots (QDs) structures. The interaction between delocalised acoustic phonons and an ensemble of localised electronic states yields interferences in the Raman scattering efficiency. Raman scattering interferences provide an image in reciprocal space of the electronic density and therefore allow one to probe the spatial ordering of QDs and the localisation of the electronic states. Spatial correlations functions are obtained by performing inverse Fourier transforms. Characteristic distances can be identified, provided that optical and acoustic wave reflexion effects are taken into account."
}
@article{Atkinson20061436,
title = "Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1436 - 1439",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000917",
author = "P. Atkinson and S.P. Bremner and D. Anderson and G.A.C. Jones and D.A. Ritchie",
keywords = "Quantum dot",
keywords = "Molecular beam epitaxy",
keywords = "Indium arsenide",
abstract = "Ex situ electron-beam lithography followed by conventional wet etching has been used to pattern small holes 60–150 nm wide, ∼13 nm deep in GaAs substrates. These holes act as preferential nucleation sites for InAs dot growth during subsequent overgrowth. By varying either the InAs deposition amount or the thickness of a GaAs buffer layer, the occupancy over the patterned sites can be controlled. Comparison with growth on a planar substrate shows that preferential nucleation occurs due to a reduction in the apparent critical thickness above the pattern site; the magnitude of this reduction is dependent on the dimensions of the initial pattern."
}
@article{Irene20061440,
title = "Quantum dot-based quantum buses for quantum computer hardware architecture",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1440 - 1441",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000929",
author = "Irene and D’Amico",
keywords = "Quantum computation",
keywords = "Quantum dots",
keywords = "Nanodevices",
abstract = "We propose a quantum bus based on semiconductor self-assembled quantum dots. This allows for transmission of qubits between the different quantum registers, and could be integrated in most of the present proposal for semiconductor quantum dot-based quantum computation."
}
@article{MiguelSánchez20061442,
title = "MBE growth and processing of diluted nitride quantum well lasers on GaAs (1 1 1)B",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1442 - 1445",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000930",
author = "J. Miguel-Sánchez and A. Guzmán and J.M. Ulloa and M. Montes and A. Hierro and E. Muñoz",
keywords = "MBE",
keywords = "Diluted nitrides",
keywords = "(111)B",
keywords = "Laser diodes",
abstract = "We have grown by Molecular Beam Epitaxy GaInNAs/GaAs (1 1 1)B quantum wells (QWs) embedded in p-i-n diode and laser diode structures. The impact of the different growth parameters (As flux, growth temperature, growth rate, ion density) on the optical and structural properties of this material is studied by Photoluminescence and Atomic Force Microscopy. Additionally, systematic studies of rapid thermal annealing cycles have been performed to optimize the laser structures. Finally, edge-emitting laser diodes have been processed using these structures. These devices showed room-temperature laser emission above 1.2 μm under pulsed current conditions."
}
@article{Ng20061446,
title = "Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3 μm applications",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1446 - 1450",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000942",
author = "J. Ng and M. Missous",
keywords = "Molecular beam epitaxy",
keywords = "Stacked quantum dot",
keywords = "Defect",
abstract = "We propose the growth of thick ‘spacer’ layers (d) for high-quality 10-stack InAs/GaAs quantum dots (QDs) emitting at 1.23 μm without the use of strain reduction layers (SRLs). All samples were grown using molecular beam epitaxy (MBE) and extensively characterised using X-ray diffraction, optical spectroscopy and microscopy techniques. We demonstrate that for d<50 nm, large ‘volcano-like’ defects are formed at the top of the stacked structure, while for d=50 nm, these features were not observed. The process of suppressing these abnormal defects has resulted in significant photoluminescence (PL) enhancement, paving the way for the realisation of defect-free QD laser devices."
}
@article{Shchukin20061451,
title = "Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1451 - 1460",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000954",
author = "V.A. Shchukin and N.N. Ledentsov and I.P. Soshnikov and N.V. Kryzhanovskaya and M.V. Maximov and N.D. Zakharov and P. Werner and D. Bimberg",
keywords = "Nanofaceting",
keywords = "Alloy decomposition",
keywords = "Transmission electron microscopy",
keywords = "High resolution",
keywords = "Quantum well",
keywords = "Quantum wire",
keywords = "Polarized photoluminescence",
keywords = "Photonic bangap crystal laser",
abstract = "Most of the modern epitaxial structures for semiconductor lasers serving the needs of optical storage and fiber pumping are grown on misoriented GaAs(0 0 1) substrates. It has been found in metal-organic vapor-phase epitaxy that surface misorientation helps to achieve better epitaxial quality of the alloy layers. On the other hand, these misoriented or, in other definition, high-index surfaces are known to undergo phase transformations, depending on the misorientation angle, from nanofaceting (like (3 1 1)A, (3 1 1)B, (3 3 1), (2 1 1)B GaAs surfaces) to arrays of step bunches (like (7 7 5) GaAs, etc.). In the present paper, we consider growth-related effects during growth of both standard and advanced laser structures on GaAs ( 1 1 ¯ 8 ) substrates which are typically used for growth of 650 nm GaAlInP devices. We show that the active region of the laser structures represents a corrugated superlattice with a ∼25 nm in-plane periodicity, while the surrounding layers are natural superlattices with a ∼5 nm vertical periodicity. Corrugated superlattice used as an active region manifests itself through a strong modification of optical properties. Strong in-plane polarization evidences the formation of arrays of quantum wires. Both standard and advanced red laser have been grown and processed. The advanced lasers have demonstrated a vertical beam divergence of only 7–8° full-width at half-maximum (FWHM). The advanced lasers with 10 μm-wide stripes demonstrate continuous wave (CW) power up to ∼200 mW and the lateral beam divergence of 4°, and those with 4 μm-wide stripes show CW power up to ∼120 mW and the lateral beam divergence of 6.5°. No facet passivation has been applied and the power is limited by the catastrophic optical mirror damage (COMD). 20 W pulsed power has been achieved in 100 μm-wide stripes for the advanced design and 6 W has been obtained for the standard design. The advantage comes from the design optimization of the laser waveguide using the concept of the longitudinal photonic bandgap crystal. We believe that also the optimization of the active region with better utilization of the nanofaceting effects may enable, in addition, a dramatic extension of the emission wavelength towards bright red (620–630 nm) and, probably, yellow (∼580 nm) spectral ranges."
}
@article{Anantathanasarn20061461,
title = "Wavelength controlled InAs/InP quantum dots for telecom laser applications",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1461 - 1467",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000966",
author = "S. Anantathanasarn and R. Nötzel and P.J. van Veldhoven and F.W.M. van Otten and Y. Barbarin and G. Servanton and T. de Vries and E. Smalbrugge and E.J. Geluk and T.J. Eijkemans and E.A.J.M. Bente and Y.S. Oei and M.K. Smit and J.H. Wolter",
keywords = "InAs",
keywords = "InGaAsP",
keywords = "InP (1 0 0)",
keywords = "Quantum dot",
keywords = "Metalorganic vapor-phase epitaxy",
keywords = "Laser",
abstract = "This article reviews the recent progress in the growth and device applications of InAs/InP quantum dots (QDs) for telecom applications. Wavelength tuning of the metalorganic vapor-phase epitaxy grown single layer and stacked InAs QDs embedded in InGaAsP/InP (1 0 0) over the 1.55-μm region at room temperature (RT) is achieved using ultra-thin GaAs interlayers underneath the QDs. The GaAs interlayers, together with reduced growth temperature and V/III ratio, and extended growth interruption suppress As/P exchange to reduce the QD height in a controlled way. Device quality of the QDs is demonstrated by temperature-dependent photoluminescence (PL) measurements, revealing zero-dimensional carrier confinement and defect-free InAs QDs, and is highlighted by continuous-wave ground-state lasing at RT of narrow ridge-waveguide QD lasers, exhibiting a broad gain spectrum. Unpolarized PL from the cleaved side, important for realization of polarization insensitive semiconductor optical amplifiers, is obtained from closely stacked QDs due to vertical electronic coupling."
}
@article{Ng20061468,
title = "Photoluminescence beyond 1.5 μm from InAs quantum dots",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1468 - 1470",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000978",
author = "J.S. Ng and H.Y. Liu and M.J. Steer and M. Hopkinson and J.P.R. David",
keywords = "Photoluminescence",
keywords = "Type-II",
keywords = "Quantum dots",
abstract = "Photoluminescence measurements were carried out to investigate the origin of long wavelength emissions (∼1.6 μm at room temperature) observed from wafers with InAs quantum dots capped with GaAsSb layers. For wafers with high Sb content (22% and 26%) photoluminescence peak energies were found to be linearly proportional to third root of optical excitation power, a characteristic of emission due to a type-II band alignment. This work therefore presents unambiguous evidence that the long wavelength emission of the wafers comes from type-II band alignment between the InAs quantum dots and the GaAsSb capping layers."
}
@article{Rastelli20061471,
title = "Reading the footprints of strained islands",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1471 - 1476",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.029",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600098X",
author = "A. Rastelli and M. Stoffel and G. Katsaros and J. Tersoff and U. Denker and T. Merdzhanova and G.S. Kar and G. Costantini and K. Kern and H. von Känel and O.G. Schmidt",
keywords = "Self-assembled quantum dots",
keywords = "Ge/Si",
keywords = "Selective etching",
keywords = "Morphological transitions",
abstract = "We report on recent advances in the understanding of surface processes occurring during growth and post-growth annealing of strained islands which may find application as self-assembled quantum dots. We investigate the model system SiGe/Si(0 0 1) by a new approach based on “reading the footprints” which islands leave on the substrate during their growth and evolution. Such footprints consist of trenches carved in the Si substrate. We distinguish between surface footprints and footprints buried below the islands. The former allow us to discriminate islands which are in the process of growing from those which are shrinking. Islands with steep morphologies grow at the expense of smaller and shallower islands, consistent with the kinetics of anomalous coarsening. While shrinking, islands change their shape according to thermodynamic predictions. Buried footprints are investigated by removing the SiGe epilayer by means of selective wet chemical etching. Their reading shows that: (i) during post-growth annealing islands move laterally because of surface-mediated Si–Ge intermixing; (ii) a tree-ring structure of trenches is created by dislocated islands during their “cyclic” growth. This allows us to distinguish coherent from dislocated islands and to establish whether the latter are the result of island coalescence."
}
@article{Tukiainen20061477,
title = "Selective growth experiments on gallium arsenide (1 0 0) surfaces patterned using UV-nanoimprint lithography",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1477 - 1480",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.030",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001030",
author = "A. Tukiainen and J. Viheriälä and T. Niemi and T. Rytkönen and J. Kontio and M. Pessa",
keywords = "Selective growth",
keywords = "Molecular beam epitaxy",
keywords = "Nanoimprint lithography",
keywords = "Patterned substrates",
abstract = "We describe a nanoimprint lithography (NIL) process and subsequent solid-source molecular beam epitaxy (SSMBE) growth of III–V semiconductors on patterned substrates. In particular, growth of GaAs, GaInAs, and GaInP, and effects of growth temperature were studied using AFM, SEM, and XRD. It turns out that selective growth of GaAs on patterned substrates is relatively straightforward, but GaInAs and GaInP are more challenging. For the first time, GaInP has been selectively grown on UV-NIL-patterned substrates using SSMBE."
}
@article{Kamins20061481,
title = "Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1481 - 1485",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000991",
author = "T.I. Kamins and A.A. Yasseri and S. Sharma and R.F.W. Pease and Q. Xia and S.Y. Chou",
keywords = "Epitaxy",
keywords = "Graphoepitaxy",
keywords = "Self-assembled monolayers",
keywords = "Nucleation",
abstract = "Surface relief formed by nanoimprinting and etching into a thermally grown SiO2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge. By controlling the deposition conditions, the surface diffusion length was adjusted to be comparable to or larger than the spacing between features, thus favoring nucleation adjacent to steps, rather than random nucleation. Random nucleation was further suppressed by a two-stage deposition process. Ge nucleation on oxide by chemical vapor deposition was enhanced by coating the oxide surface with an organic self-assembled monolayer (SAM) and by the nanoimprinted surface relief. The nanoimprinted surface relief also provides long-range order in the SAM."
}
@article{Harley20061486,
title = "Spin dynamics in (1 1 0)-oriented quantum wells",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1486 - 1489",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001005",
author = "R.T. Harley and O.Z. Karimov and M. Henini",
keywords = "Quantum wells",
keywords = "Spintronics",
keywords = "Spin dynamics",
abstract = "Quantum structures of III–V semiconductors grown on (1 1 0)-oriented substrates are promising for spintronic applications because they allow us to engineer and control spin dynamics of electrons. We summarise the theoretical ideas, which are the basis for this claim and review experiments to investigate them."
}
@article{Limmer20061490,
title = "Magnetic anisotropy in (Ga,Mn)As on GaAs(1 1 3)As studied by magnetotransport and ferromagnetic resonance",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1490 - 1492",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001029",
author = "W. Limmer and M. Glunk and J. Daeubler and T. Hummel and W. Schoch and C. Bihler and H. Huebl and M.S. Brandt and S.T.B. Goennenwein and R. Sauer",
keywords = "GaMnAs",
keywords = "(1 1 3)A",
keywords = "Magnetic anisotropy",
keywords = "Magnetotransport",
keywords = "Ferromagnetic resonance",
abstract = "The magnetic anisotropy of a 40-nm-thick (Ga,Mn)As film with 5% Mn grown on GaAs(1 1 3)A is studied by means of magnetotransport and ferromagnetic resonance (FMR) spectroscopy. In addition to the cubic and a weak uniaxial in-plane anisotropy, two uniaxial out-of-plane contributions along [1 1 3] and [0 0 1] are found. Using the anisotropy parameters determined from FMR, the longitudinal and transverse resistivities measured as a function of magnetic field orientation and strength are well modelled within the framework of a single ferromagnetic domain. In particular, the low-field data which are strongly affected by sudden jumps of the magnetization are well reproduced."
}
@article{Fisher20061493,
title = "Growth, structure, and morphology of TiO2 films deposited by molecular beam epitaxy in pure ozone ambients",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1493 - 1497",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001042",
author = "Patrick Fisher and Oleg Maksimov and Hui Du and Volker D. Heydemann and Marek Skowronski and Paul A. Salvador",
keywords = "Titanium dioxide",
keywords = "MBE",
keywords = "Thin film epitaxy",
abstract = "TiO2 films were grown using a reactive molecular beam epitaxy system equipped with high-temperature effusion cells as sources for Ti and an ozone distillation system as a source for O. The growth mode, characterized in-situ by reflection high-energy electron diffraction (RHEED), as well as the phase assemblage, structural quality, and surface morphology, characterized ex-situ by X-ray diffraction and atomic force microscopy (AFM), depended on the choice of substrate, growth temperature, and ozone flux. Films deposited on (1 0 0) surfaces of SrTiO3, (La0.27Sr0.73)(Al0.65Ta0.35)O3, and LaAlO3 grew as (0 0 1)-oriented anatase. Both RHEED and AFM indicated that smoother surfaces were observed for those grown at higher ozone fluxes. Moreover, while RHEED patterns indicated that anatase films grown at higher temperatures were smoother, AFM images showed presence of large inclusions in these films."
}
@article{Tsukamoto20061498,
title = "Heteroepitaxial growth of InAs on GaAs(0 0 1) by in situ STM located inside MBE growth chamber",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1498 - 1504",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001054",
author = "S. Tsukamoto and G.R. Bell and Y. Arakawa",
keywords = "Scanning tunneling microscopy",
keywords = "Molecular beam epitaxy",
keywords = "Quantum dots",
keywords = "InAs",
keywords = "GaAs",
abstract = "The growth of InAs on GaAs(0 0 1) is of great interest primarily due to the self-assembly of arrays of quantum dots (QDs) with excellent opto-electronic properties. However, a basic understanding of their spontaneous formation is lacking. Advanced experimental methods are required to probe these nanostructures dynamically in order to elucidate their growth mechanism. Scanning tunneling microscopy (STM) has been successfully applied to many GaAs-based materials grown by molecular beam epitaxy (MBE). Typical STM–MBE experiments involve quenching the sample and transferring it to a remote STM chamber under arsenic-free ultra-high vacuum. In the case of GaAs-based materials grown at substrate temperatures of 400–600 °C, operating the STM at room temperature ensures that the surface is essentially static on the time scale of STM imaging. To attempt dynamic experiments requires a system in which STM and MBE are incorporated into one unit in order to scan in situ during growth. Here, we discuss in situ STM results from just such a system, covering both QDs and the dynamics of the wetting layer."
}
@article{Lin20061505,
title = "The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (0 0 1) surface",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1505 - 1510",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.031",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001066",
author = "J.C. Lin and P.W. Fry and R.A. Hogg and M. Hopkinson and I.M. Ross and A.G. Cullis and R.S. Kolodka and A.I. Tartakovskii and M.S. Skolnick",
keywords = "Selective area epitaxy",
keywords = "Molecular beam epitaxy",
keywords = "InAs quantum dots",
abstract = "The growth of InAs quantum dots (QDs) on GaAs (0 0 1) substrates by selective area molecular beam epitaxy (SA-MBE) with dielectric mask is investigated. The GaAs polycrystals on the mask, which is formed during growth due to low GaAs selectivity between dielectric mask and epitaxial region in MBE, strongly affect the distribution of InAs QDs on the neighbouring epitaxial regions. It is found that the GaAs polycrystalline regions strongly absorb indium during QD growth, confirmed by microscopic and optical studies. GaAs polycrystalline deposit can be reduced under low growth rate and high-temperature growth conditions. Almost no reduction in QD areal density is observed when there is minimal polycrystalline coverage of the mask."
}
@article{Chou20061511,
title = "[1 1 1]B-oriented GaAsSb grown by gas source molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "37",
number = "12",
pages = "1511 - 1514",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001078",
author = "Li-Chang Chou and Yu-Ru Lin and Cheng-Tien Wan and Hao-Hsiung Lin",
keywords = "Molecular beam epitaxy",
keywords = "GaAsSb",
keywords = "Phase separation",
keywords = "Type II",
abstract = "We report the GaAsSb bulk layers and GaAsSb/GaAs quantum wells (QWs) grown on (1 1 1)B GaAs substrates by gas source molecular beam epitaxy. We found that Sb composition in the GaAsSb epilayers is very sensitive to the substrate temperature. The composition drops from 0.35 to 0.16 as the substrate temperature increases from 450 to 550 °C. The [1 1 1]B-oriented GaAsSb epilayers show phase separation when the substrate temperature is lower than 525 °C. For a GaAsSb/GaAs multiple quantum wells (MQWs) structure composed of five periods of 5 nm GaAs0.73Sb0.27 QW and 30 nm GaAs barrier, the room temperature photoluminescence emission is located at 1255, 80 nm longer than the [1 0 0]-oriented sample with the same Sb composition. The peak wavelength shows significant blue shift as the excitation level increases, which evidences the type-II band alignment in this heterostructure."
}
@article{tagkey2006CO2,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "CO2 - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00223-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206002230",
key = "tagkey2006CO2"
}
@article{Marta20061147,
title = "Foreword:Thermal investigations of integrated circuits and systems at THERMINIC’04",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1147 - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003046",
author = "Marta and Rencz"
}
@article{Sinha20061148,
title = "Thermal conduction in sub-100 nm transistors",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1148 - 1157",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003058",
author = "S. Sinha and K.E. Goodson",
keywords = "Phonon",
keywords = "Heat",
keywords = "Conduction",
keywords = "Transistor",
abstract = "Heat conduction in integrated circuits spans length scales across several orders of magnitude: From the lattice spacing at a few Angstroms to the substrate thickness at hundreds of micrometers. The smaller length scale becomes increasingly important in devices with feature size well below 100 nm. This paper provides an overview of sub-continuum electro-thermal transport. We use the phonon Boltzmann transport equation to model heat conduction in the device and show that phonons emitted by hot electrons in the drain create a phonon hotspot. The resulting non-equilibrium leads to increased thermal resistance within the device. At the limits of scaling, the resistance is comparable to that due to the substrate and packaging."
}
@article{Launay20061158,
title = "Hybrid micro-nano structured thermal interfaces for pool boiling heat transfer enhancement",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1158 - 1164",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.016",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500306X",
author = "S. Launay and A.G. Fedorov and Y. Joshi and A. Cao and P.M. Ajayan",
keywords = "Pool boiling",
keywords = "Enhancement",
keywords = "Heat transfer",
keywords = "Carbon nanotube",
keywords = "Silicon",
keywords = "Surface microstructure",
abstract = "Boiling heat transfer from hybrid micro-nano structured thermal interfaces has been studied experimentally using PF5060 and deionized water as working fluids for the range of saturation temperatures Tsat between 35 °C and 60 °C. Various enhancement structures were fabricated using surface micromachining in silicon. The performance of the smooth and roughened silicon surfaces, bare and fully coated with carbon nanotubes (CNTs), the silicon-etched as well as CNTs-based pin-fin arrays, and the 3D microstructures have been studied in detail. The highest heat fluxes were obtained using the 3D microstructure without CNTs—these are 27 and 130 W/cm2 for PF5060 and water, respectively. Experimental results indicate that use of the CNT-enabled, purely nano-structured interfaces appear to improve boiling heat transfer only at very low superheats, as compared to the smooth surfaces."
}
@article{SureshV20061165,
title = "Advances in mesoscale thermal management technologies for microelectronics",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1165 - 1185",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003071",
author = "Suresh V. and Garimella",
keywords = "Mesoscale",
keywords = "Thermal management",
keywords = "Microelctronics",
abstract = "This paper presents recent advances in a number of novel, high-performance cooling techniques for emerging electronics applications. Critical enabling thermal management technologies covered include microchannel transport and micropumps, jet impingement, miniature flat heat pipes, transient phase change energy storage systems, piezoelectric fans, and prediction of interface contact conductance."
}
@article{ElMasry20061186,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1186 - 1187",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.017",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600173X",
author = "Mohamed Ibrahim El Masry and Mohamed Masmoudi"
}
@article{Hanine20061188,
title = "A reliable guideline to maximize the detection and analysis of deep level defects: Comparison between DLTS analysis techniques",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1188 - 1193",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.034",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001741",
author = "M. Hanine and M. Masmoudi",
keywords = "Deep level defects",
keywords = "Capacitance transients",
keywords = "Figure of merit",
keywords = "Defects resolution",
keywords = "Smoothing algorithm",
abstract = "In this paper, we present reliable guidelines allowing to maximize the detection and analysis of deep defects in semiconductors by introducing a new method of analysis that we named Modified Levenberg–Marquardt Deep-Level Transient Spectroscopy (MLM-DLTS) based on the Levenberg–Marquardt algorithm that we modified deliberately and associated with two other high-resolution techniques, i.e. the Matrix Pencil algorithm and modified Prony's method. The performances of the method were first assessed with a procedure of simulation by generating multi-exponential capacitance transients with a changing signal-to-noise ratio. These different tests have demonstrated to what extent such a method of analysis is more efficient than classic correlation methods based on DLTS spectra and than three high-resolution methods already existing in the literature. Finally, when the signal-to-noise ratio is low, and in the aim of getting precise results, a few smoothing algorithms were tested. Our findings evidence how the smoothing quality can be controlled under certain conditions while avoiding both the distortions in the shape of the capacitance transients and the DLTS spectra."
}
@article{Fox20061194,
title = "Cost-effective integration of an FN-programmed embedded flash memory into a 0.25 μm SiGe:C RF-BiCMOS technology",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1194 - 1199",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001753",
author = "A. Fox and K.E. Ehwald and P. Schley and R. Barth and S. Marschmeyer and C. Wolf and V.E. Stikanov and A. Gromovyy and A. Hudyryev",
keywords = "Embedded flash memory",
keywords = "Fowler–Nordheim",
keywords = "SiGe",
keywords = "BiCMOS",
abstract = " This paper presents a process technology for cost-effective integration of low-power flash memories into a 0.25 μm, high performance SiGe:C RF-BiCMOS process. Only four additional lithographic steps are used on top of the baseline BiCMOS process, leading to in total 23 mask levels for the BiCMOS/embedded flash process. Uniform-channel Fowler–Nordheim programmable and erasable stacked-gate cells, suitable for medium density (∼Mbit) memories, are demonstrated. Peripheral high-voltage transistors, with >10 V breakdown voltage, are integrated without additional mask steps on top of the flash cell integration. The flash memory integration is modular and has negligible impact on the original CMOS and HBT device parameters."
}
@article{Mizouni20061200,
title = "Hybrid verification integrating HOL theorem proving with MDG model checking",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1200 - 1207",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001765",
author = "Rabeb Mizouni and Sofiène Tahar and Paul Curzon",
keywords = "Multiway decision graphs (MDG)",
keywords = "Higher-order logic (HOL)",
abstract = "In this paper, we describe a hybrid tool for hardware formal verification that links the HOL (higher-order logic) theorem prover and the MDG (multiway decision graphs) model checker. Our tool supports abstract datatypes and uninterpreted function symbols available in MDG, allowing the verification of high-level specifications. The hybrid tool, HOL–MDG, is based on an embedding in HOL of the grammar of the hardware modeling language, MDG-HDL, as well as an embedding of the first-order temporal logic L mdg used to express properties for the MDG model checker. Verification with the hybrid tool is faster and more tractable than using either tools separately. We hence obtain the advantages of both verification paradigms."
}
@article{Tmar20061208,
title = "RTDT: A static QoS manager, RT scheduling, HW/SW partitioning CAD tool",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1208 - 1219",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001777",
author = "H. Tmar and J.-Ph. Diguet and A. Azzedine and M. Abid and J.-L. Philippe",
keywords = "RT system",
keywords = "Power model",
keywords = "RT scheduling",
keywords = "Static QoS manager",
keywords = "SoC",
abstract = "The hardware/software partitioning/scheduling relies on two subtasks: the cost function and the real time (RT) analysis. Besides these two subtasks, the proposed generic framework, also called RT design trotter (RTDT), processes the problem of the Quality of Service (QoS) management. The aim is to add a new dimensions to solution selection, namely the guarantee of QoS from both application quality and RT issue points of view. The proposed framework defines an iteration loop of three steps that solve the sub-problems. The cost function takes into account the system on chip (SoC) area and the static and dynamic power dissipation. We show how our tool can be used to rapidly evaluate the impact of the application quality and the RT constraints choices (QoS parameters) over the final cost."
}
@article{Jan20061220,
title = "A monolithic low-power high-voltage driver for bistable LCDs",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1220 - 1230",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001789",
author = "Jan and Doutreloigne",
keywords = "Low-power integrated circuit",
keywords = "High-voltage integrated circuit",
keywords = "Display driver",
keywords = "Bistable LCD",
keywords = "High-voltage generator",
keywords = "Level-shifter",
abstract = "A complete low-power high-voltage driver for a 80×104 passive-matrix bistable LCD is integrated in a 0.7 μm CMOS smart-power technology. It features 100 V driving capability on all row and column outputs and comprises all necessary digitally programmable high-voltage generators and multiplexers to synthesize the required complex high-voltage waveforms from a 3 V battery. An original level-shifter design for the high-voltage multiplexers and a dedicated architecture for the programmable high-voltage generators yield an extremely low internal power consumption below 10 mW for the entire driver chip."
}
@article{ElSankary20061231,
title = "High-resolution background calibrated ADCs for software-defined radios",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1231 - 1240",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001790",
author = "Kamal El-Sankary and Mohamad Sawan",
keywords = "Analog-to-digital converter (ADC)",
keywords = "Pipelined ADC",
keywords = "Background calibration",
keywords = "Time interleaved ADC",
abstract = "Next-generation transceivers operating with different standards require the existence of a wide bandwidth and highly linear analog-to-digital converters (ADCs) to enable software-defined radios (SDR). Several methods dealing with the design and implementation of high-resolution and high-speed ADCs to provide the stringent requirements of the wide-bandwidth transceivers are presented. A special focus is made on pipelined ADC for its superior performance in terms of speed and resolution. A digital background calibration technique to compensate for the capacitors mismatch, and the finite opamps gain is presented. Low overhead digitally oriented technique to increase the speed of the ADC beyond the technological limits by overcoming the problems of the conventional time-interleaving is also presented. Simulation results prove the effectiveness of these techniques."
}
@article{Mazzanti20061241,
title = "CMOS injection locked oscillators for quadrature generation at radio-frequency",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1241 - 1250",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001807",
author = "Andrea Mazzanti and Francesco Svelto",
keywords = "CMOS RF integrated circuits",
keywords = "Quadrature local oscillators",
keywords = "VCO",
keywords = "Phase noise",
keywords = "Injection locking",
keywords = "Frequency dividers",
abstract = "The design of quadrature local oscillators for CMOS wireless transceivers is still one of the most challenging issues. This paper focuses the advantages of injection locking techniques to achieve high-performance quadrature generators. A synchronizing oscillator sets spectral purity while locked oscillators set quadrature accuracy and drive the mixer LO input capacitances. Two different architectures, realized in a 0.18 μm CMOS technology, are illustrated and compared. The first, using LC tank locked oscillators as frequency dividers, is tailored to UMTS and show high driving capability with low power. Simple and accurate equations for the design are reported. The second quadrature generator, employing coupled VCOs driven by an auxiliary VCO, is tailored to DCS1800 and achieves outstanding phase accuracy and phase noise. Experimental results compare favorably against previously published solutions."
}
@article{Thierry20061251,
title = "RF CMOS body-effect circuits",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1251 - 1260",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.029",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001819",
author = "Taris Thierry and Begueret Jean-Baptiste and Lapuyade Hervé and Deval Yann",
keywords = "LNA",
keywords = "Mixer",
keywords = "Power amplifier",
keywords = "CMOS",
keywords = "RF",
keywords = "VLSI",
keywords = "Body effect",
abstract = "After a theoretical and analytical study of the body effect in MOS transistors, this paper offers two useful models of this parasitic phenomenon. Thanks to these models, a design methodology, which takes advantage of the bulk terminal, allows to turn this well-known body-effect drawback into an analog advantage, giving thus an efficient alternative to overcome the design constraints of the CMOS VLSI wireless mass market. To illustrate the approach, four RF building blocks are presented. First, a 0.9 V 10 dB gain LNA, covering a frequency range 1.8–2.4 GHz, thanks to a body-effect common mode feedback, is detailed. Secondly, a body-effect linearity controlled pre-power amplifier is presented exhibiting a 5 dB m input compression point (ICP1) variation under 1.8 V power supply for half the current consumption. Lastly, two mixers based on body-effect mixing are presented, which achieve a 10 dB conversion gain under 1.4 V for a −52 dB LO-to-RF isolation. Well suited for low-power/low-voltage applications, these circuits implemented in a 0.18 μm CMOS VLSI technology are dedicated to multi-standard architectures and system-on-chip implementations."
}
@article{Ragi20061261,
title = "I–V characteristics of Schottky contacts based on quantum wires",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1261 - 1264",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600142X",
author = "R. Ragi and M.A. Romero",
keywords = "Two-dimensional electron gas",
keywords = "Field emission",
keywords = "Thermionic emission",
keywords = "Quantum wire",
keywords = "Heterodimensional devices",
keywords = "Schottky contacts",
abstract = "In this paper we derive the I–V characteristics of Schottky contacts based on bulk metal to semiconductor quantum wires interfaces. The obtained results show that quantum confinement is a strong reduction of the reverse saturation current when compared to conventional Schottky contacts. Numerical simulations are carried out to highlight the advantages of using these proposed heterodimensional interfaces in applications involving low-noise photodetectors and low-leakage gate electrodes."
}
@article{Carvalho20061265,
title = "SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1265 - 1270",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.027",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001959",
author = "Edson J. Carvalho and Marco A.R. Alves and Edmundo S. Braga and Lucila Cescato",
keywords = "Interference lithography",
keywords = "Standing wave pattern",
keywords = "Deep photoresist structures",
keywords = "RIE plasma etching",
abstract = "We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process."
}
@article{Yang20061271,
title = "Organic light-emitting devices with double-block layer",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1271 - 1275",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.026",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001947",
author = "Huishan Yang and Yi Zhao and Jingying Hou and Shiyong Liu",
keywords = "Organic light-emitting diodes",
keywords = "Block layer",
keywords = "Vacuum deposition",
abstract = "We report on the fabrication of organic light-emitting devices (OLEDs) using double-block layers on the electron transport layer and emitting layer. The current efficiency of the organic light-emitting diode is improved by 43% to 9.16 cd A−1 as compared to the device with a single host of Alq3 as the electron transport layer. The maximum luminance is over 23 750 cd m−2 at the bias of 18 V and the current of 338.3 mA cm−2, which is 33% higher than the single host Alq3 device without block layer. Using a step-by-step procedure to smooth electron injection and transport, the energy levels introduced by the insertion layers are an effective method of improving the luminance characteristics."
}
@article{Zaouk20061276,
title = "Piezoelectric zinc oxide by electrostatic spray pyrolysis",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1276 - 1279",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001923",
author = "D. Zaouk and Y. Zaatar and R. Asmar and J. Jabbour",
keywords = "Piezoelectric ZnO",
keywords = "Electrostatic spray pyrolysis technique",
keywords = "X-ray diffraction",
abstract = "Zinc oxide (ZnO) possesses many interesting properties, such as a wide energy band gap, large photoconductivity, and high excitonic binding energy. Piezoelectric (ZnO) film has a high electro-mechanical coupling coefficient, which makes it a promising material for high frequency and low surface acoustic wave (SAW), bulk acoustic wave, and microelectromechanical system devices. In this work, we present the first results obtained for piezoelectric ZnO thin films prepared on corning 7059 glass substrate by electrostatic spray pyrolysis (ESP), a simple, cheap and efficient technique not widely used for ZnO deposition, using zinc nitrate in a mixture of deionised water and isopropyl alcohol. The structural morphologic and optical properties of the films have been studied and the effect of the preparation conditions, such as substrate temperature and substrate–nozzle distance, discussed. Highly c-axis preferred orientation, which is critical for piezoelectric applications (ultrasonic oscillators and transducers devices), ZnO thin films are obtained at 350 °C growth temperature and at 4.5 cm substrate–nozzle distance."
}
@article{Fang20061280,
title = "Fabrication and performance of MEMS-based piezoelectric power generator for vibration energy harvesting",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1280 - 1284",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001911",
author = "Hua-Bin Fang and Jing-Quan Liu and Zheng-Yi Xu and Lu Dong and Li Wang and Di Chen and Bing-Chu Cai and Yue Liu",
keywords = "Piezoelectric power generator",
keywords = "MEMS",
keywords = "Composite cantilever",
keywords = "Vibration",
keywords = "Energy harvesting",
abstract = "A MEMS-based energy harvesting device, micro piezoelectric power generator, is designed to convert ambient vibration energy to electrical power via piezoelectric effect. In this work, the generator structure of composite cantilever with nickel metal mass is devised. Micro-electronic-mechanical systems (MEMS) related techniques such as sol–gel, RIE dry etching, wet chemical etching, UV-LIGA are developed to fabricate the device and then its performance is measured on vibration testing setup. The investigation shows that the designed device is expected to resonantly operate in low-frequency environmental vibration through tailoring the structure dimension. Under the resonant operation with frequency of about 608 Hz, a first prototype of the generator result in about 0.89 V AC peak–peak voltage output to overcome germanium diode rectifier toward energy storage, and its power output is in microwatt level of 2.16 μW."
}
@article{You20061285,
title = "Current impulse response of thin InP p+–i–n+ diodes",
journal = "Microelectronics Journal",
volume = "37",
number = "11",
pages = "1285 - 1288",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.07.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001613",
author = "A.H. You and P.L. Cheang",
keywords = "Avalanche photodiodes",
keywords = "Dead-space effect",
keywords = "Bit-error-rate",
keywords = "Current impulse response",
keywords = "Multiplication gain",
abstract = "The simulation of current impulse response using random response time model in avalanche photodiode (APD) is presented. A random response time model considers the randomness of times at which the primary and secondary carriers are generated in multiplication region. The dead-space effect is included in our model to demonstrate the impact on current impulse response of thin APDs. Current impulse response of homojunction InP p+–i–n+ diodes with the multiplication widths of 0.1 and 0.2 μm are calculated. Our results show that dead-space gives a slower decay rate of current impulse response in thin APD, which may degrade the bit-error-rate of the optical communication systems."
}
@article{tagkey2006CO2,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "CO2 - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00183-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001832",
key = "tagkey2006CO2"
}
@article{Madani20061031,
title = "Influence of hydrogen dilution and substrate temperature on growth of nanocrystalline hydrogenated silicon carbide films deposited by RF sputtering",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1031 - 1035",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.033",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001194",
author = "M. Madani and H. Colder and X. Portier and K. Zellama and R. Rizk and H. Bouchriha",
keywords = "Infrared and Raman spectra",
keywords = "Nanocrystalline materials",
keywords = "Deposition by sputtering",
keywords = "Structure and morphology",
keywords = "Thickness",
keywords = "Crystalline orientation and texture",
abstract = "Hydrogenated nanocrystalline silicon carbide (nc-SiC: H) thin films were prepared by radiofrequency magnetron sputtering. Deposition was effectuated in plasma of Argon and Hydrogen mixture with several proportions (30–80% H2) and at different substrate temperatures (ambient, 500 °C). The films microstructure was studied by means of FTIR and Raman spectroscopy. These two techniques helped us to have an idea on the composition of our samples and the existing species. A comparative study of the obtained results has allowed us to make conclusions about the role of both hydrogen dilution and substrate temperature on deposition of layers with good parameters in terms of crystallinity and optical properties. These observations were correlated with those obtained by diffraction and high-resolution TEM."
}
@article{Luo20061036,
title = "Fabrication and application of silicon-reinforced PDMS masters",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1036 - 1046",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000711",
author = "Cheng Luo and Fang Meng and Anand Francis",
keywords = "PDMS master",
keywords = "Reinforcement",
keywords = "Pattern transfer",
keywords = "Non-polar solvent",
abstract = "A new molding process is developed in this work to generate a silicon (Si)-reinforced polydimethylsiloxane (PDMS) master of a 4 in wafer size using an SU-8 mold. The reinforced PDMS master is applied to pattern a conducting polymer, poly-3-hexylthiophene (P3HT), which is normally dissolved by a non-polar solvent. PDMS is usually patterned by a molding process, in which PDMS is first coated on and then peeled off from a rigid mold. However, in the new molding process, the Si-reinforced PDMS master is rigid but the SU-8 mold is flexible, and the SU-8 mold is first placed on and then peeled off from the rigid PDMS master. In such a way, a reinforced PDMS master of a size as large as a 4 in wafer can be produced. Meanwhile, a new way of obtaining free-standing, large SU-8 structures is presented. PDMS swells when it gets exposed to non-polar solvents. This swelling makes PDMS not suitable for patterning materials, which are usually dissolved by non-polar solvents, e.g., P3HT. In this work, we demonstrate that, with the reinforcement of a Si plate, the swelling effect in generating this specific type of materials is much reduced, and good patterns can be produced."
}
@article{Kwon20061047,
title = "Simulation of electronic/ionic mixed conduction in solid ionic memory devices",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1047 - 1051",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000747",
author = "Hyuck In Kwon and Umberto Ravaioli",
keywords = "Electronic/ionic mixed conduction",
keywords = "Solid ionic memory devices",
keywords = "Poisson–Nernst–Planck equations",
keywords = "PROPHET",
keywords = "Carrier distribution",
abstract = "The electronic/ionic mixed conduction is examined in solid ionic memory devices by numerically solving the Poisson–Nernst–Planck equations using the computational platform PROPHET. The boundary conditions for the Poisson–Nernst–Planck system are determined based on the theoretical treatments as a Dirichlet type. The chemical composition of the mixed conductor under the reference electrode and the magnitude of applied biases are considered as important parameters in the simulation. The results show that the deviation of carrier distribution increases from the analytical solutions with the increase of applied biases and the decrease of the partial pressure of the non-metallic component near the reference electrode in solid ionic memory devices."
}
@article{Xiao20061052,
title = "Theoretical study of mechanical properties of multi-layer ULSI interconnect dielectrics by surface acoustic wave method",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1052 - 1055",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000693",
author = "Xia Xiao and Xueyi You and Suying Yao",
keywords = "Multi-layer interconnect",
keywords = "Low k",
keywords = "SAW",
keywords = "Young's modulus",
abstract = "The surface acoustic waves (SAWs) technique is becoming an attractive tool for accurately and nondestructively characterizing the mechanical property of the fragile low dielectric constant (low-k) thin film used in the advanced ULSI multi-layer interconnects. The dispersion features of SAWs propagating on the layered structure of low-k/SiO2/Si substrate and low-k/Cu/Si substrate are investigated in detail. The influence of the film thickness on the dispersion curvature is provided as an instruction for an accurate and facile fitting process. Numerical results indicate that the mechanical property of low-k films is expected to determine effectively when the broadband frequency is up to 300 MHz."
}
@article{JonathanE20061056,
title = "A large-scale parametric study of InP deposition on patterned substrates",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1056 - 1063",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600070X",
author = "Jonathan E. and Greenspan",
keywords = "A3. Selective epitaxy",
keywords = "A3. Metalorganic chemical vapor deposition",
keywords = "B2. Semiconducting III–V materials",
abstract = "Selective Area Epitaxy (SAE) is the process of locally depositing a semiconductor film on a substrate which has been patterned with an inert masking material such as SiO2. During deposition by metalorganic chemical vapor deposition (MOCVD), the build up of precursors over the SiO2 mask causes material to diffuse into the open areas leading to a growth rate increase. SAE is an important technique for electronic and photonic device fabrication, and for the monolithic integration of these devices. The present work is a single comprehensive study, which reports on the impact of all major MOCVD parameters to SAE indium phosphide films. The parameters include pressure, V/III pressure ratio, growth rate, temperature and mask geometry."
}
@article{Chan20061064,
title = "Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1064 - 1071",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000735",
author = "Kah-Yoong Chan and Bee-San Teo",
keywords = "Copper",
keywords = "Sputtering power",
keywords = "Deposition pressure",
keywords = "Morphology",
keywords = "Microstructure",
abstract = "This paper addresses the influences of sputtering power and deposition pressure on the surface morphology and structural behavior of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon grown at room temperature. Results from our experiments show that the deposition rate of the Cu film increases proportionally with the sputtering power and decreases with deposition pressure. From the atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, high sputtering power enhances the microstructure of the Cu film through the surface diffusion mechanism of the adatom. The poor microstructure as a result of low sputtering power deposition was manifested with the smaller value of Cu film root mean square (RMS) roughness obtained. The deposition pressure has the contrary influence on structural properties of Cu film in which high deposition pressure favors the formation of voided boundaries film structure with degraded film crystallinity due to the shadowing effect, which varies with different deposition pressures."
}
@article{DeVita20061072,
title = "Ultra-low-power temperature compensated voltage reference generator",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1072 - 1079",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000863",
author = "Giuseppe De Vita and Giuseppe Iannaccone",
keywords = "CMOS voltage reference",
keywords = "Temperature coefficient",
keywords = "Low power",
abstract = "A CMOS voltage reference generator, based on the difference between the gate–source voltages of two NMOS transistors, has been implemented with AMS 0.35 μm CMOS technology ( V thn = 0.45 and V thp = 0.75 V at 0 °C). The minimum and maximum supply voltages that ensure the correct operation of the reference voltage generator, are 1.5 and 4.3 V, respectively. The supply current at the maximum supply voltage and at 80 °C is 2.4 μA. A temperature coefficient of 25 ppm/°C and a line sensitivity of 1.6 mV/V are achieved. The power supply rejection ratios without any filtering capacitor at 100 Hz and 10 MHz are larger than −74 and −59 dB, respectively. The occupied chip area is 0.08 mm2."
}
@article{AlAsmar20061080,
title = "Characterization and ellipsometric investigation of high-quality ZnO and ZnO(Ga2O3) thin alloys by reactive electron-beam co-evaporation technique",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1080 - 1085",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000553",
author = "R. Al Asmar and J.-P. Atanas and Y. Zaatar and J. Podlecki and A. Foucaran",
keywords = "ZnO(Ga2O3)",
keywords = "e-Beam co-evaporation",
keywords = "Ellipsometric measurements",
keywords = "Photoluminescence",
abstract = "High-quality ZnO(Ga2O3) thin films have been co-evaporated by reactive electron-beam evaporation in an oxygen environment. The effect of Ga2O3 on the structural and optical properties has been investigated. X-ray diffraction (XRD) measurements have shown that the ZnO(Ga2O3) alloys are c-axis-oriented. The alloy containing 28% of Ga2O3 showed the best crystallinity. Photoluminescence on ZnO(28%Ga2O3) reveals an enhancement of the ultraviolet near band edge emission at 380 nm while the intensity of the deep-level emissions weakens. A reduction of the oxygen vacancies as well as the reduction of the zinc interstitials with gallium may explain this effect. Thus, the possibility of transitions of electron in the conduction band to a deep acceptor level due to zinc interstitials may decrease. Finally, ellipsometric measurements show that the optimum weight concentration of gallium oxide in the alloys is 28%, thus correlating with the XRD and photoluminescence measurements."
}
@article{DiCataldo20061086,
title = "High-speed CMOS unity-gain current amplifier",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1086 - 1091",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000656",
author = "Giuseppe Di Cataldo and Rosario Mita and Salvatore Pennisi",
keywords = "CMOS",
keywords = "Current follower",
keywords = "Unity-gain amplifier",
keywords = "Current mode",
abstract = "A high-performance CMOS unity-gain current amplifier is proposed. The solution adopts two feedback loops to reduce the input resistance and a nested-Miller technique to provide frequency compensation. A design example using a 0.8 μm process and a 2 V supply is given and SPICE simulations show a bandwidth of 75 MHz, no slew-rate limitations and a settling time better than 50 ns, irrespective of the current amplitude. Input and output resistances are better than 0.1 Ω and 15 MΩ, respectively. The input-referred white noise spectral density is 10 pA / Hz ."
}
@article{Mita20061092,
title = "A fast driver circuit for single-photon sensors",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1092 - 1096",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.002",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600067X",
author = "Rosario Mita and Gaetano Palumbo and Pier Giorgio Fallica",
keywords = "Active quenching circuit",
keywords = "Analog/digital circuit",
keywords = "Driver",
keywords = "CMOS design",
abstract = "A fast active quenching and recharging circuit (AQRC) for single-photon avalanche diodes (SPAD) is presented in this paper. The proposed driver exhibits a lower than 10 ns overall quenching time allowing a tunable excess voltage from 5 to 12 V. The circuit was designed by using the dielectrically insulated BiCMOS technology supplied by ST Microelectronics. Many post-layout ELDO simulations have validated the high performance of the proposed topology, which is actually the fastest AQRC reported in the literature."
}
@article{Hassan20061097,
title = "Low-power multi-threshold MCML: Analysis, design, and variability",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1097 - 1104",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000589",
author = "Hassan Hassan and Mohab Anis and Mohamed Elmasry",
keywords = "Multi-threshold MOS current mode logic (MTMCML)",
keywords = "Design",
keywords = "Technology scaling",
keywords = "Parameter variations",
keywords = "Low power",
abstract = "The increasing demand on low-power applications is adding pressure on circuit designers to come out with new circuit styles that can decrease power dissipation while making use of the performance improvement of the new CMOS technologies. Multi-threshold MOS current mode logic (MTMCML) appears to be a solution to this problem by making use of the high-performance of MOS current mode circuits while minimizing power dissipation with the help of multi-threshold CMOS technologies. In this work, analytical formulations, based on the BSIM3v3 model, are proposed for MTMCML performance measures with an error within 10% compared to HSPICE. The formulation helps designers to efficiently design MTMCML circuits without undergoing the time-consuming HSPICE simulations. Furthermore, it provides design guidelines and aids for designers to fully understand the different tradeoffs in MTMCML design. In addition, the analysis is extended to study the impact of technology scaling and parameter variations on MTMCML. It is shown that the worst case variation in the minimum supply voltage of MTMCML is 1.16%, thus suggesting maximal power saving."
}
@article{Chung20061105,
title = "New ISFET interface circuit design with temperature compensation",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1105 - 1114",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000875",
author = "Wen-Yaw Chung and Yeong-Tsair Lin and Dorota G. Pijanowska and Chung-Huang Yang and Ming-Chia Wang and Alfred Krzyskow and Wladyslaw Torbicz",
keywords = "Ion sensitive field effect transistor (ISFET)",
keywords = "pH sensor",
keywords = "Temperature compensation",
abstract = "An integrated and new interface circuit with temperature compensation has been developed to enhance the ISFET readout circuit stability. The bridge-type floating source circuit suitable for sensor array processing has been proposed to maintain reliable constant drain–source voltage and constant drain current (CVCC) conditions for measuring the threshold voltage variation of ISFET due to the corresponding hydrogen ion concentration in the buffer solution. The proposed circuitry applied to Si3N4 and Al2O3-gate ISFETs demonstrate a variation of the drain current less than 0.1 μA and drain–source voltage less than 1 mV for the buffer solutions with the pH value changed from 2 to 12. In addition, the scaling circuitry with the VT temperature correction unit (extractor) and LABVIEW software are used to compensate the ISFET thermal characteristics. Experimental results show that the temperature dependence of the Si3N4-gate ISFET sensor improved from 8 mV/°C to less than 0.8 mV/°C."
}
@article{Soetedjo20061115,
title = "Changes of electrical properties by Al content of AlxGa1−xAs in pHEMT structures as observed using HRXRD",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1115 - 1118",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000565",
author = "Hariyadi Soetedjo and S. Ezrol Esham and Idris Sabtu and Y. Mohd Razman and A.M. Abdul Fatah",
keywords = "HRXRD",
keywords = "pHEMT",
keywords = "Lattice constant",
keywords = "Epitaxial layer",
abstract = "Characterizations on the pseudomorphic High Electron Mobility Transistor structure under High-Resolution X-ray Diffraction (HRXRD) have been carried out at room temperature. Variation of Al contents in AlxGa1−xAs alloys has been found to show a shift of diffraction peaks. This variation is also found to show the change of lattice constant of crystal and also sheet carrier concentration as obtained from a Hall effect measurement. The latter phenomenon is considerably interesting to study in the early stage of the electrical properties of device based on the crystal structure."
}
@article{Calmon20061119,
title = "Impact of low-frequency substrate disturbances on a 4.5 GHz VCO",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1119 - 1127",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000668",
author = "Francis Calmon and Cristian Andrei and Olivier Valorge and Jose-Cruz Nuñez Perez and Jacques Verdier and Christian Gontrand",
keywords = "VCO",
keywords = "Substrate noise",
keywords = "Impulse response",
keywords = "Mixed analog-digital integrated circuits",
abstract = "This paper presents the impact of low-frequency substrate disturbances on a fully integrated voltage-controlled oscillator (VCO) spectrum. A 4.5 GHz VCO test-chip is presented; two substrate taps are placed inside the VCO core to measure or to inject disturbances into the substrate. The VCO carrier frequency sensitivity function of the tuning voltage and the bias current are measured. Then, the VCO spurious side-bands caused by harmonic substrate noise disturbances are analyzed to find a relation between the substrate noise characteristics and spur magnitudes. Theoretically the impulse sensitivity function (ISF) approach is used to analyze device sensitivity to substrate noise. Finally, a significant link between device sensitivity functions, low-frequency substrate disturbances and the VCO side-band spectral power, is demonstrated. According to this study, we conclude that a global approach which only considers power supply bounces in mixed IC's is not sufficient to analyze the sensitivity of RF integrated oscillators to low frequency substrate noise."
}
@article{Baderna20061128,
title = "Power efficiency evaluation in Dickson and voltage doubler charge pump topologies",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1128 - 1135",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.013",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600005X",
author = "Davide Baderna and Alessandro Cabrini and Marco Pasotti and Guido Torelli",
keywords = "Charge pump",
keywords = "Power efficiency",
keywords = "Dickson",
keywords = "Voltage doubler",
abstract = "This paper presents a theoretical and experimental comparison between two charge pump architectures commonly used in CMOS integrated circuits, namely the Dickson scheme and the cascade of voltage doublers. The comparison is carried out considering power efficiency as the main feature of interest. To compare the two topologies, two charge pumps were integrated in 0.18-μm triple-well CMOS technology. The two charge pumps were designed with the same operating clock frequency, the same storage capacitance per stage, and the same number of stages (and, thus, approximately the same area). The theoretical and the experimental comparison showed that the power efficiency of the voltage doubler scheme is higher (by about 13% at I out = 1 mA ), mainly thanks to the lower parasitic capacitance associated to the boosted nodes."
}
@article{Moez20061136,
title = "Lumped-element analysis and design of CMOS distributed amplifiers with image impedance termination",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "1136 - 1145",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.04.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000826",
author = "Kambiz K. Moez and Mohamed I. Elmasry",
keywords = "Transmission lines",
keywords = "Distributed amplifiers",
keywords = "Wideband amplifiers",
keywords = "CMOS analogue integrated circuits",
abstract = "This paper presents a systematic matrix-based lumped-element analysis of CMOS distributed amplifiers (DAs). Since transmission lines (TLs) of the DAs are artificially constructed from a ladder of a finite number of inductors and capacitors, the conventional TL-based analysis of microwave DAs can not be accurately applied to CMOS DAs. The proposed lumped-analysis method is also more intuitive for analog circuit designers than the TL analysis adapted from microwave amplifiers analysis because it provides the performance characteristics of the amplifiers as functions of circuit elements values, and not the TL characteristics. The image impedance technique is used for the design of input/output terminating networks. A new image impudence matrix is defined to accommodate the extension of the theory from two- to four-port networks, and a practical realization of the image impedance matrix is presented using the available circuit elements in CMOS technology. The simulation results clearly indicate an improved voltage gain and a better gain uniformity over the bandwidth of the proposed DA design terminated at its image impedance compared with the amplifier terminated at its nominal TL characteristics impedance."
}
@article{tagkey2006I,
title = "Advert - Corporate End User",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "I - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00189-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001893",
key = "tagkey2006I"
}
@article{tagkey2006II,
title = "Advert - AEUE",
journal = "Microelectronics Journal",
volume = "37",
number = "10",
pages = "II - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00190-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600190X",
key = "tagkey2006II"
}
@article{tagkey2006CO2,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "CO2 - ",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(06)00124-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206001248",
key = "tagkey2006CO2"
}
@article{Wang2006847,
title = "Quadratic electro-optic effects and electro-absorption process in InGaN/GaN cylinder quantum dots",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "847 - 850",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.007",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600053X",
author = "Chunxia Wang and Guiguang Xiong",
keywords = "Electro-optical effects",
keywords = "Optical susceptibility",
keywords = "Optical properties of quantum dots",
abstract = "We carried a detailed calculation of quadratic electro-optic effects (QEOE) and electro-absorption (EA) process as a function of pump photon energy ħω in InGaN/GaN cylinder quantum dots. The third-order susceptibility dispersion behaviors of direct current are obtained. It is found that with the increase of the quantum dot (QD) height and radius, the magnitudes of the real part of the quadratic electro-optic susceptibility and the imaginary part of the EA susceptibility increase at the resonant frequency, and its resonant position shifts to the lower energy region. In addition, lower In content induces larger χ(3)."
}
@article{Ekekwe2006851,
title = "Power dissipation sources and possible control techniques in ultra deep submicron CMOS technologies",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "851 - 860",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000528",
author = "Ndubuisi Ekekwe and Ralph Etienne-Cummings",
keywords = "Power dissipation",
keywords = "Control techniques",
keywords = "Submicron CMOS",
keywords = "Leakage current",
keywords = "Semiconductor roadmap",
abstract = "As technology scales down into the ultra deep-submicron (UDSM) region, the static power dissipations grow exponentially and become an increasingly dominant component of the total power dissipation in CMOS circuits. With increase in gate leakage current resulting from thinner gate oxides in UDSM and the problems associated with short channel effects, leakage power dissipation is becoming a huge factor challenging a continuous success of CMOS technology in the semiconductor industry. With strict limitations of maximum allowable power (the power being limited more by system level cooling and test constraints than packaging) of 2.8 W (in 2005) to 3 W (in 2020) for battery (low cost/handheld) operated devices as projected by the International Technology Roadmap for Semiconductors (ITRS) 2005, innovations in leakage control and management are urgently needed. This paper presents an overview of the sources of the power dissipation mechanisms in the UDSM technologies, and the device and circuit techniques to control them."
}
@article{Guo2006861,
title = "A new analytical model for optimizing SOI LDMOS with step doped drift region",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "861 - 866",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000541",
author = "Yufeng Guo and Zhaoji Li and Bo Zhang",
keywords = "SOI",
keywords = "LDMOS",
keywords = "Step drift doping profile",
keywords = "RESURF",
abstract = "In this paper, a new theoretical breakdown model of SOI RESURF LDMOS with step drift doping profile is proposed. According to this model, the 2-D electric field distributions of drift regions are investigated for both the incompletely and completely depleted cases. The doping profile and step number are optimized to improve the breakdown voltage and reduce fabrication cost. Finally, SOI LDMOS with various step numbers have been made using a 3 μm-thick top silicon layer and a 1.5 μm-thick buried oxide layer. The experiment results indicate that two-step drift doping can enable increase in the breakdown voltage by as much as 40% and decrease in the on-resistance by as much as 16% in comparison to the conventional LDMOS with uniformly doped drift region."
}
@article{Hsieh2006867,
title = "Titanium nitride electrodes for micro-gap discharge",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "867 - 870",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000516",
author = "Chung-Fon Hsieh and Shyankay Jou",
keywords = "Breakdown voltage",
keywords = "ESD discharge",
keywords = "Micro-gap discharge",
keywords = "Titanium nitride",
abstract = "Titanium and titanium nitride (TiN) were used as thin film electrodes for a micro-gap discharge device. The titanium electrodes were fabricated by sputter deposition of pure titanium accompanied with a lift-off process. The TiN electrodes were prepared by nitriding the titanium electrodes with nitrogen plasma. Gas discharges between the electrodes at various argon pressures were characterized and their breakdown voltages were compared. Both the titanium and TiN electrodes have a minimum breakdown voltage about 220 V at a pressure spacing product (P·d) of 0.8 mbar·cm. The nitrided electrodes were more durable than the as-deposited titanium electrodes upon a DC discharge for 5 s or 200 cycles of electrostatic discharge."
}
@article{Liu2006871,
title = "Experimental method and FE simulation model for evaluation of wafer probing parameters",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "871 - 883",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000504",
author = "D.S. Liu and M.K. Shih",
keywords = "Wafer probing test",
keywords = "Needle probe",
keywords = "Micro-force tests",
keywords = "Finite element method",
abstract = "Wafer probing technology is a critical testing technology that is used in the semiconductor manufacturing and packaging process. A well-designed probing system must enable low and stable contact resistance when each needle-like probe makes contact with the IC chip-bonding pad. Mechanical contact using excessive probe force causes over-sized scrub marks that may damage the die pad and sizably deform the probe tip. In this paper, an experimental setup of a single tungsten needle probe making contact with an Al pad was employed to investigate the relationships between the overdrive, contact force, and scrub mark length. A three-dimensional computational probing simulation model was developed for analyzing dynamic deformations of the contact phenomena during wafer testing. The mechanical tensile strength of the tungsten needle was tested with a micro-tester to examine the tensile stress–strain relationship. The elastoplastic behaviors of the probe and die were taken into account in the simulation model. The resultant scrub lengths from the simulation were verified against the experimental data. Additional critical data, such as data of the scrub mark sinking on the die surface and the maximum Von-Mises stress level location at the probe tips, can be predicted. The experimental and numerical methods presented here can be used as useful performance evaluation tools to support the choice of suitable probe geometry and wafer probe testing parameters."
}
@article{Joseph2006884,
title = "Device preparation and characterization of drain current transients in static induction micro transistors",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "884 - 887",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000498",
author = "C.M. Joseph and T. Natsume and M. Nakamura and M. Iizuka and K. Kudo",
keywords = "Static induction transistors",
keywords = "Vacuum evaporation",
keywords = "Schottky effect",
keywords = "Transistor characteristics",
keywords = "Patterned gate electrode",
keywords = "Drain current transient study",
abstract = "Static induction transistors (SITs) based on copper phthalocyanine (CuPc) were prepared and the dependence of static and transient characteristics on the edge features of the patterned Al gate electrode was studied. Devices having Al gate electrodes deposited with and without a gap between a shadow mask and the substrate were prepared. Devices prepared in the presence of the gap produces a thin transparent edge for the Al gate electrode which enhances the modulation of the drain current by the gate voltage. However, a repetitive slow transient of the drain current was observed for the devices using gap. This transient is considered to be due to the charge carrier trapping at Al dots in the active channel region."
}
@article{Štrichovanec2006888,
title = "Characterization of QWIP structures prepared on GaAs-patterned substrates",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "888 - 891",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000292",
author = "P. Štrichovanec and R. Kúdela and I. Vávra and J. Novák",
keywords = "Quantum well",
keywords = "Photodetector",
keywords = "Infrared",
keywords = "Patterned substrate",
keywords = "MOCVD",
abstract = "In this work we investigate the preparation of quantum well infrared photodetectors (QWIP) on planar and patterned GaAs substrates. Mesa ridges with various angles between sidewall and substrate (1 0 0) plane were prepared by wet chemical etching. The QWIP structures were grown at a temperature of 700 °C by use of low-pressure MOVPE. Electrical properties and spectral sensitivity of QWIP structures prepared on tilted sidewalls were measured. Our results showed that mesa ridges confined at the sides by facets tilted at 30° to (1 0 0) were most suitable for the QWIP preparation. Asymmetry in room temperature I–V characteristics and a small photovoltaic effect observed at 77 K was ascribed to asymmetric position of delta doping plane in the quantum well."
}
@article{Bouzaïene2006892,
title = "GaAs substrate orientation dependence of resonant quasi-level lifetime in 2D–2D InGaAs/GaAs resonant tunneling devices",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "892 - 896",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000280",
author = "L. Bouzaïene and N. Imbarek and L. Sfaxi and H. Maaref",
keywords = "Resonant quasi-level lifetime",
keywords = "InGaAs/GaAs",
keywords = "Resonant tunneling structure",
keywords = "GaAs substrate (0 0 1), (3 1 1)A and (1 1 1)A",
abstract = "Resonant quasi-level lifetime of the lowest quasi-bound state localized within the quantum well region of a InGaAs/GaAs double barrier resonant tunneling structure have been analytically calculated for three different GaAs substrate orientations such as (0 0 1), (3 1 1)A and (1 1 1)A. The calculation is based on the solution of the time-independent Schrödinger equation and takes into account the effective mass changes between the well and barrier materials. A significant dependence of the ground state energy and its associated lifetime on the effective masses of the well and barrier layers, indium concentration in the well InxGa1−xAs material, which is associated to the barrier height, and GaAs substrate orientation has been observed. We believe that the structure grown on GaAs (1 1 1)A substrate is more useful for developing new resonant tunneling two-dimensional (2D) devices. Finally, the coupling effect between transverse and longitudinal wave vector has also been investigated. With increasing the transverse wave vector the lowest energy and its associated lifetime decrease and this for the different GaAs substrate orientations."
}
@article{A2006897,
title = "Generalized Fibonacci quasi photonic crystals and generation of superimposed Bragg Gratings for optical communication",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "897 - 903",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.02.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000346",
author = "A. and Rostami",
keywords = "Quasi-periodic photonic crystals",
keywords = "Fibonacci-class",
keywords = "Superimposed Bragg Gratings",
abstract = "In optical fiber communication, usually, optical signals are communicated around 1.35 or 1.55 μm. All optical active and passive devices should operate in these wavelengths or in a bandwidth close to these wavelengths. In this paper, it is shown that the Fibonacci-class ( FC ( J , n ) ) one-dimensional quasi-periodic dielectric stack for [1.2–2 μm] bandwidth duration shows superimposed Bragg Gratings behavior. Thus, a new method will be presented to approximate these structures with superimposed Bragg Gratings in this wavelength duration. For the approximated superimposed Gratings the number of Gratings, the index of refraction contrasts, number of layers and related period of Gratings are calculated in terms of original system parameters. The proposed idea will open applicable analytical methods for investigation of quasi crystals in optical communication. Also, using presented approach nature of light propagation and physical interactions through these structures can be better described. In this work, using simulation of original Fibonacci quasi structure some of important parameters are extracted. Then, all parameters for construction of the superimposed Bragg Gratings using basic relations in integrated optics and extracted information will be calculated. Finally, constructed model is simulated and compares with original case. We show that our constructed superimposed Bragg Gratings closely follows original curve."
}
@article{Gong2006904,
title = "Quantum size dependent optical nutation in a core-shell CdSe/ZnS quantum dot",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "904 - 909",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000279",
author = "Shaohua Gong and Duanzheng Yao and Xiaobo Feng and Hongliang Jiang",
keywords = "Core-shell QDs",
keywords = "Optical nutation",
keywords = "Quantum size effect",
keywords = "Electric transition dipole moment",
abstract = "The energy eigenvalues and eigenfunctions have been obtained for a core-shell CdSe/ZnS quantum dot structure under effective-mass approximation. The electric transition dipole moment is calculated for the 1s–2s electronic transition. The optical nutation signal of the transition of electrons has been calculated numerically based on optical Bloch equations. Particularly, we have investigated the quantum size, the core's radius and the shell's thickness, dependent optical nutation. It is shown from calculation results that the optical nutation signal is sensitive to the size and structure change. And the reasons for the variation of the Rabi frequency have been discussed based on the theory of the quantum size confined effect (QSCE)."
}
@article{Golan2006910,
title = "Hot-Probe method for evaluation of impurities concentration in semiconductors",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "910 - 915",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000267",
author = "G. Golan and A. Axelevitch and B. Gorenstein and V. Manevych",
keywords = "Hot-Probe method",
keywords = "Charged carriers concentration",
keywords = "Type of charged carriers",
keywords = "Semiconductors film properties",
abstract = "Electrical, optical, and mechanical properties of thin films significantly differ from those of bulk materials. Therefore, characterization methods for evaluation of thin film properties became highly important. A novel approach to the well known “Hot-Probe” method is proposed and applied in our work. The conventional Hot Probe characterization method enables only the definition of a semiconductor type, P or N, by identifying the majority charged carriers. According to the new Hot Probe technique, one can measure and calculate the majority charged carriers concentration and its dynamic parameters. Feasibility proof of the upgraded Hot Probe method was done in Si and Ge bulk, and in thin film semiconductor samples."
}
@article{Wang2006916,
title = "Bright green organic light-emitting devices having a composite electron transport layer",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "916 - 918",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000255",
author = "Fangcong Wang and Su Liu and Jianlin Zhou and Shuo Sun and Bingli Qi and Guping Ou",
keywords = "Organic light-emitting device (OLED)",
keywords = "Buffer layer",
keywords = "Electron transport layer (ETL)",
abstract = "A bright green organic light-emitting device employing a co-deposited Al–Alq3 layer has been fabricated. The device structure is glass/indium tin oxide (ITO)/ N, N′-diphenyl-N, N′- (3-methylphenyl)-1, 1′-biphenyl-4, 4′-diamine (TPD)/tris(8-quinolinolato) aluminum (Alq3)/ Al–Alq3/Al. In this device, Al–Alq3 is used as electron transport layer (ETL). The device shows an operation voltage of 6.1 V at 20 mA/cm2. At optimal condition, the brightness of a device at 20 mA/cm2 is 2195 cd/m2 achieved a luminance efficiency of 5.64lm/W. The result proves that the composite Al–Alq3 layer is suitable for the ETL of organic light-emitting devices (OLEDs)."
}
@article{Gupta2006919,
title = "An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "919 - 929",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000243",
author = "Ritesh Gupta and Sandeep k. Aggarwal and Mridula Gupta and R.S. Gupta",
keywords = "InAlAs/InGaAs heterostructure",
keywords = "Discretized doped",
keywords = "Delta doped",
keywords = "Uniformly doped",
keywords = "Pulsed doped",
keywords = "Parallel conduction",
keywords = "Breakdown voltage",
abstract = "In the proposed work the model has been formulated for discretized doped HEMT, where the conventional uniformly doped, pulsed doped and delta doped structure are the special cases. An expression for sheet carrier density has been formulated considering the effect of doping-thickness product and has been extended to calculate drain current, transconductance, capacitance and cut-off frequency of the device. The model also takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to validate it from subthreshold region to high conduction region. The results so obtained have been compared with pulsed doped structure to validate the model. The analysis concentrates on the distance of doping from the heterojunction and gate electrode. Different design criteria have been given to dope the carriers (amount and distance) in different regions to optimize the performance for higher sheet carrier density/parallel conduction voltage/effective parallel conduction voltage (Vc−Voff) to increase the transconductance, cut-off frequency and reliability of the device."
}
@article{Chan2006930,
title = "Effects of substrate temperature on electrical and structural properties of copper thin films",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "930 - 937",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000231",
author = "Kah-Yoong Chan and Teck-Yong Tou and Bee-San Teo",
keywords = "Copper",
keywords = "Sputtering",
keywords = "Substrate temperature",
keywords = "Surface morphology",
keywords = "Electrical properties",
abstract = "This paper addresses the effects of substrate temperature on electrical and structural properties of dc magnetron sputter-deposited copper (Cu) thin films on p-type silicon. Copper films of 80 and 500 nm were deposited from Cu target in argon ambient gas pressure of 3.6 mTorr at different substrate temperatures ranging from room temperature to 250 °C. The electrical and structural properties of the Cu films were investigated by four-point probe and atomic force microscopy. Results from our experiment show that the increase in substrate temperature generally promotes the grain growth of the Cu films of both thicknesses. The RMS roughness as well as the lateral feature size increase with the substrate temperature, which is associated with the increase in the grain size. On the other hand, the resistivity for 80 nm Cu film decreases to less than 5 μΩ-cm at the substrate temperature of 100 °C, and further increase in the substrate temperature has not significantly decreased the film resistivity. For the 500 nm Cu films, the increase in the grain size with the substrate temperature does not conform to the film resistivity for these Cu films, which show no significant change over the substrate temperature range. Possible mechanisms of substrate-temperature-dependent microstructure formation of these Cu films are discussed in this paper, which explain the interrelationship of grain growth and film resistivity with elevated substrate temperature."
}
@article{Alam2006938,
title = "A modified model for Si/SiGe MOS-gate delta-doped HEMTs",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "938 - 942",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600022X",
author = "Mohmmad T. Alam and S.K. Islam",
keywords = "Delta-doped MOS-gate HEMT",
keywords = "Si/SiGe",
keywords = "Minimum gate voltage of HEMT",
abstract = "An analytical model for threshold voltage (Vth) and minimum gate voltage (Vtl) of Si/SiGe MOS-gate delta-doped HEMT is presented in this letter. The model is valid for any width of the delta-doped layer and any distance of the layer from the Si/SiO2 interface. Using the model, Vth and Vtl of a Si/SiGe MOS-gate delta-doped HEMT of known dimensions are calculated. To investigate the effect of variation of the width of the delta-doped layer, the threshold voltage and the minimum gate voltage have been plotted against the width. Medici™ simulation have been performed on the same device to evaluate Vth and Vtl for different delta-doped layer widths. The simulation results are in good agreement with the results found using the analytical model."
}
@article{Ravariu2006943,
title = "Interface electric charge modelling and characterization with δ – distribution generator strings in thin SOI films",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "943 - 947",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000309",
author = "C. Ravariu and A. Rusu and F. Ravariu",
keywords = "SOI",
keywords = "Flat-band voltage",
keywords = "δ–distribution",
keywords = "Pseudo-MOS transistors",
keywords = "Nano-films",
abstract = "Today's SOI technologies are able to produce buried oxides with a thickness spectrum from 400 nm in the standard HTA SIMOX, down to tens of nm in Unibond technique. In the SOI structures, two oxide-semiconductor interfaces exist, with specific associated charges. Conventional models ignore the charges situated at the buried oxide-substrate interface, being focused just on the front and back channels conduction in the silicon film. All these fixed charges, classically expressed in e cm−2, are physically spread into a small volume that becomes significant in very thin films (nanofilms). This paper presents a new model of the flat-band voltage using δ–distribution generator strings. The model accuracy increases in the SOI nanofilms domain, accordingly with our theory and numerical simulations. On the other hand, an experimental setup is presented for the spreading parameters extraction, in the case of a HTA SIMOX wafer."
}
@article{Fang2006948,
title = "Fabrication and performance of a micromachined 3-D solenoid inductor",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "948 - 951",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000218",
author = "Dong-Ming Fang and Xi-Ning Wang and Yong Zhou and Xiao-Lin Zhao",
keywords = "Solenoid inductor",
keywords = "RF MEMS",
keywords = "Quality factor",
keywords = "3-D",
abstract = "A high-Q and fres (self-resonant frequency)solenoid inductor was fabricated by using the microelectromechanical systems(MEMS) technology with air-core structure. This inductor has an air core and an electroplated copper coil to reduce the series resistance, and the solenoid structure with laterally laid out structure saves the chip area significantly. The measurement results show that this inductor has high Q-factor and stable inductance over wide range of operating frequency. The maximum Q-factor of this inductor is 38 and the inductance is 1.78 nH at 5 GHz with an air core of 45 μm. Moreover, the Q-factor and the inductance grow with the increasing of the air core."
}
@article{Camillo2006952,
title = "The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "952 - 957",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269206000206",
author = "L.M. Camillo and J.A. Martino and E. Simoen and C. Claeys",
keywords = "Zero temperature coefficient",
keywords = "Temperature dependence",
keywords = "Silicon on insulator technology",
keywords = "Mobility degradation",
keywords = "Simple model",
abstract = "The zero temperature coefficient (ZTC) is investigated experimentally in partially (PD) and fully depleted (FD) SOI MOSFET fabricated in a 0.13 μm SOI CMOS technology. A simple model to study the behavior of the gate voltage at ZTC (VZTC) is proposed in the linear and the saturation region. The influence of the temperature mobility degradation on VZTC is analyzed for PD and FD devices. Experimental results show that the temperature mobility degradation is larger in FD than in PD devices, which is responsible for the VZTC decrement observed in FD instead of the increment observed in PD devices when the temperature increases. The analysis takes into account temperature dependence model parameters such as threshold voltage and mobility. The analytical predictions are in very close agreement with experimental results in spite of the simplification used for the VZTC model as a function of temperature in the linear and the saturation region."
}
@article{Li2006958,
title = "Transport through a quantum-dot-ring with one dot connected to two electron reservoirs",
journal = "Microelectronics Journal",
volume = "37",
number = "9",
pages = "958 - 962",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2006.01.007",
url = "http://www.sciencedirect.com/science/article/pii/S002626920600019X",
author = "Hua Li and Tianquan Lü and Punan Sun and Zelong He and Haitao Yin",
keywords = "Quantum dots",
keywords = "Ring-shaped array",
keywords = "Transport",
abstract = "Making use of the equation of motion method and Keldysh Green function technique, we obtain a general current formula for a quantum-dot-ring with one of the dots connected to two electron reservoirs under a DC bias voltage. The transmission probability T ( ω ) as a function of electron ω curve is presented, which displays oscillation structure. The resonant states of the system are found to distribute within an interval centered at ε 0 (the dot energy level) with a width of two times the tunnel coupling amplitude between two neighboring dots, the number of the resonant peaks agrees with N (the number of the dots) when inter-dot tunnel coupling is sufficiently large and an odd–even behavior appears at the Fermi energy."
}
@article{Amara2006669,
title = "FPGA vs. ASIC for low power applications",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "669 - 677",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003927",
author = "Amara Amara and Frédéric Amiel and Thomas Ea",
keywords = "FPGA",
keywords = "ASIC",
keywords = "Low power",
keywords = "Clock gating",
keywords = "Power consumption",
abstract = "Field Programmable Gate Array (FPGA) are becoming more and more popular and are used in many applications. However, it is well known that the performance is limited comparing to full ASIC implementation, but for many applications the speed requirements fit the ones provided already by existing FPGA circuits. Power consumption seems to be one of the most important limiting factor and so far it is in favour of Application Specific Integrated Circuits (ASIC) [Varghese Georges, Jan M. Rabaey, Low-Energy FPGA, Architecture and Design, Kluwer Academic Publishers, 2001; Tadahiro Kuroda, Power-Aware Electronics: Challenges and Opportunities, Tutorial at FTFC 2003, Paris, May 2003]. In this paper, we will present results obtained by characterizing various circuits implemented using both FPGA and ASIC technologies in order to determine the power consumption ratio and evaluate the efficiency of the power optimization techniques such as clock gating [Amara AMARA, Philippe Royannez, VHDL for Low Power, (Chapter 11), Low Power Electronics Design, Edited by Christian Piguet, CRC Press 2005; Luca Benini, Giovanni De Micheli, Dynamic Power Management, Kluwer Academic Publishers, 1998].
We have started a study in order to compare the power consumption of two Intellectual Property (IP), a counter circuit and an image transform circuit. Both circuits have been implemented using FPGA Family circuits from ALTERA and Hardware Copy of the circuits which are close to the ASIC implementation. A full ASIC implementation using UMC 0.13 μm have be also characterized in terms of power.
FPGA power consumption estimation flow is based on ALTERA tools (QuartusII) that provide accurate overall power consumption for a set of input stimuli, on various targets: FPGA families and Hardware Copy. ASIC power consumption estimation flow is based on Synopsys Power tools."
}
@article{Deng2006678,
title = "Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "678 - 680",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004076",
author = "Shao-You Deng and Chang-Han Wu and Joseph Ya-min Lee",
keywords = "Transient",
keywords = "HBT",
keywords = "Hydrogen",
keywords = "InGaP",
abstract = "The transient effect on the current gain of InGaP hetero-junction bipolar transistors was studied. It was found that this transient effect was caused by hydrogen and eliminated after three or more cycles of thermal annealing at 250 °C in nitrogen. A model based on the carbon–hydrogen complex dissociation by thermal anneal is proposed to explain this observation."
}
@article{Agopian2006681,
title = "Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "681 - 685",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004088",
author = "Paula Ghedini Der Agopian and João Antonio Martino and Eddy Simoen and Cor Claeys",
keywords = "Silicon-on-insulator",
keywords = "Twin-gate structure",
keywords = "Ultra-thin gate oxides",
keywords = "Tunneling currents",
keywords = "Linear kink effect",
keywords = "Series resistance",
abstract = "In this work, the influence of the twin-gate structure on the gate-induced floating body effects in thin gate oxide partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs is investigated through two-dimensional numerical simulations, which are validated by experimental results. The asymmetric behavior of the body potential with the interchange of the master and slave transistor of the twin-gate structure will be shown, as well as the relation between the total resistance and the effective mobility degradation factor. It will be demonstrated that a similar reduction of the linear kink effect is obtained in a twin-gate structure and in a conventional SOI transistor with an external resistance in series."
}
@article{Persson2006686,
title = "X-ray absorption and emission spectroscopy of ZnO nanoparticle and highly oriented ZnO microrod arrays",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "686 - 689",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004179",
author = "C. Persson and C.L. Dong and L. Vayssieres and A. Augustsson and T. Schmitt and M. Mattesini and R. Ahuja and J. Nordgren and C.L. Chang and A. Ferreira da Silva and J.-H. Guo",
keywords = "ZnO",
keywords = "Nanostructure",
keywords = "X-ray",
keywords = "Absorption",
keywords = "Emission",
keywords = "d-State localization",
abstract = "The electronic structures of ZnO nanoparticles and microrod arrays are studied by O 1s X-ray absorption spectroscopy (XAS) and O Kα X-ray emission spectroscopy (XES). We show that the present LDA+USIC calculation approach is suitable to correct the LDA self-interaction error of the cation d-states. The atomic eigenstates of 3d in zinc and 2p in oxygen are energetically close, which induces strong Zn-3d-O-2p hybridization. This anomalous valence band cation-d-anion-p hybridization is affected when the localization of the Zn 3d-states is taken into account. Experimentally, the XES spectra show energy dependence in the spectral shape revealing selected excitations to the Zn 3d, 4s and 4p states, hybridized with O 2p states. Strong anisotropic effects are observed for the highly oriented ZnO rods, but not for the isotropic spherical nanoparticles. The nanostructured ZnO has primarily bulk XAS and XES properties."
}
@article{Dakhlaoui2006690,
title = "Spin-dependent transmission of holes in III–V diluted magnetic semiconductor based heterostructure",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "690 - 694",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500399X",
author = "H. Dakhlaoui and S. Jaziri",
keywords = "Magnetic semiconductor",
keywords = "Heterostructure",
keywords = "Spin-filters",
abstract = "Based on the mean field approximation, we investigated analytically the spin-transport of holes through heterostructure formed by magnetic layers Ga(1−x)MnxAs separated by a non-magnetic spacer GaAs. Injected holes of up (down) spin have different transmission coefficient which oscillates for spin-down and increases fast for spin-up. The significant quantum size and (RKKY) interaction are considered simultaneously. The results indicate also that as the strength of the magnetic and non-magnetic layers increases, the spin-transmission changes. The results can be used to create efficient spin-filters."
}
@article{Das2006695,
title = "Capacitance–voltage characterization of thin film nanoporous alumina templates",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "695 - 699",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500409X",
author = "Biswajit Das and Christopher Garman",
keywords = "Nanostructure integration on silicon",
keywords = "Nanoporous dielectric",
keywords = "Nanostructure C–V characteristics",
abstract = "This paper presents the results of capacitance–voltage characterization of thin film alumina templates fabricated on silicon substrates. Such templates are of significant interest for the low-cost implementation of semiconductor and metal nanostructure arrays, as well as for potential nanostructure integration with silicon electronics. Thin film alumina templates created on silicon substrates under different anodization conditions were investigated. Capacitance–voltage measurements indicate that the template/silicon interface, important for nanostructure integration on silicon, to be of good device quality."
}
@article{Ren2006700,
title = "Heteroepitaxy of In0.53Ga0.47As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applications",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "700 - 704",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004106",
author = "Aiguang Ren and Xiaomin Ren and Qi Wang and Deping Xiong and Hui Huang and Yongqing Huang",
keywords = "Mismatch",
keywords = "LP-MOCVD",
keywords = "Heteroepitaxy",
keywords = "Scan probe microscope",
abstract = "InP/In0.53Ga0.47As/InP sandwich structure grown by low pressure metalorganic chemical vapor deposition has been investigated, in order to assess the different heteroepitaxy schemes which are based on low temperature (LT) InP metamorphic buffer layer. Photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) and scan probe microscope (SPM) have been carried out to characterize the heteroepitaxy samples. For the best optimum growth condition of 15 nm-thick LT InP buffer at the growth temperature of 450 °C, the full width at half maximum (FWHM) values of the HRXRD, the room-temperature PL were 512 arcsec and 51.7 meV, respectively and the root mean square of SPM is only 0.915 nm."
}
@article{Islam2006705,
title = "Comparative study of wetting behavior and mechanical properties (microhardness) of Sn–Zn and Sn–Pb solders",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "705 - 713",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004118",
author = "Rashed Adnan Islam and Y.C. Chan and W. Jillek and Samia Islam",
keywords = "Spreading",
keywords = "Contact angle",
keywords = "Slump",
keywords = "Microhardness",
keywords = "Eutectic",
abstract = "In this paper the solder balling, wetting, spreading, slumping and microhardness testing of the Sn–Zn based solders have been compared with the Sn–Pb solder. Two types of solders (Sn–9Zn and Sn–8Zn–3Bi) have been investigated along with Sn–37Pb solder for reference. The variation of these tests has been done as a function of reflow temperature from 220–250 °C. Solder balls of these three solder pastes after 15 min heating at 230 °C show no ball formation surrounding the central ball. Spread test shows that above 240 °C Sn–9Zn is very good and can be comparable to Sn–37Pb. The wetting angle of Sn–9Zn (39°) at 250 °C is even lower than the Sn–37Pb solder (41°). In case of Sn–8Zn–3Bi, the wetting angle is very high (77°) at 220 °C, which is unacceptable but it drops down to 48° at 250 °C. Line profiles of slump test show that after preheating at 160 °C, Sn–9Zn behaves similar to Sn–37Pb with better distinction in the finer pitch (120 μm). Microhardness shows two different characteristics for eutectic and non-eutectic solder pastes. Hardness of Sn–37Pb and Sn–9Zn (eutectic) decreases with increasing reflow temperature while the microhardness of Sn–8Zn–3Bi (non-eutectic) increases with increasing reflow temperature. Microstructural characterization at 220 and 250 °C shows grain coarsening in Sn–37Pb and Sn–9Zn solders, which cause the hardness to drop a little. For Sn–8Zn–3Bi, with increasing temperature the amount of hard Bi segregation increases which is the main cause of the rise in hardness. SEM images show the formation of Pb rich islands in Sn–37Pb, formation of Zn rod from spheroids in Sn–9Zn and precipitation of Bi-rich phase in Sn–8Zn–3Bi are the important features that contribute to different hardness nature."
}
@article{Zhan2006714,
title = "Organic light-emitting devices with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "714 - 717",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500412X",
author = "Su Zhan and Xie Ying-ge and Li Xia and Yu Tao",
keywords = "Organic light-emitting devices",
keywords = "2-(4-Biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole",
keywords = "Indium tin oxide",
keywords = "Buffer layer",
keywords = "Current efficiency",
abstract = "Organic light-emitting devices (OLEDs) with a 2-(4-biphenyl)-5-(4-butylphenyl)-1,3,4-oxadiazole layer between the α-naphtylphenyliphenyl diamine and 8-hydroxyquinoline aluminum were fabricated using a vacuum evaporation method. Compared to the different thickness of the buffer layer, the OLEDs with the 1.0 nm buffer layer showed the maximum power efficiency. The enhancements in power efficiency result from an improved balance of hole and electron injections. After comparing among different density buffer layer, PBD are good candidates for hole-injecting buffer layer, and 1.0 nm PBD buffer layer shows better operational durability and life."
}
@article{GarcíaB2006718,
title = "Two-dimensional simulations of amplification of space charge waves in a strained Si/SiGe heterostructure at 77 K",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "718 - 721",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004131",
author = "Abel García-B and Volodymyr Grimalsky and Edmundo Gutiérrez-D",
keywords = "Space charge wave",
keywords = "Strained Si/SiGe heterostructure",
keywords = "Negative differential conductance",
abstract = "We theoretically investigated the propagation and amplification of space charge waves on the surface of a strained Si/SiGe heterostructure at 77 K, using the negative differential conductance phenomenon. In this work, we also have done a comparison between the n-GaAs thin film and strained Si/SiGe heterostructure with respect to the propagation of space charge waves. We have obtained results in 2D of propagation and amplification of space charge waves in a strained Si/SiGe heterostructure until for frequencies f<40 GHz."
}
@article{Fang2006722,
title = "Study on coalescent properties of ZnO nanoclusters using molecular dynamics simulation and experiment",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "722 - 727",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004143",
author = "Te-Hua Fang and Win-Jin Chang and Jun-Wei Chiu",
keywords = "Molecular dynamics",
keywords = "Tight-binding potential",
keywords = "Coalescent properties",
keywords = "ZnO clusters",
abstract = "The coalescent properties of ZnO clusters were studied through experiment and molecular dynamics simulation in combination with the tight-binding potential and ZnO potential. The results from the simulation show that the linearly relationship between the melting temperature and the function of atom numbers of N−1/3 was obtainable. Extrapolating the result yield at a melting point of 2130 K for N→∞ (i.e. N−1/3→0) was slightly lower than the bulk value of 2248 K. In addition, the neck diameter of two ZnO clusters was a function of temperature during coalescence. The contact length was influenced by the coalescence temperature and time, when a cluster was simulated being deposited onto a substrate. The experimental results showed that the grain size increased when the coalescence temperature and sintering time were increased."
}
@article{Zarębski2006728,
title = "The electrothermal macromodel of voltage mode PWM controllers for SPICE",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "728 - 734",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.12.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205004155",
author = "Janusz Zarębski and Krzysztof Górecki",
keywords = "SMPS",
keywords = "Converter controllers",
keywords = "PWM controllers",
keywords = "SPICE",
abstract = "In the paper the problem of modelling PWM voltage mode controllers for SPICE is considered. SPICE library isothermal macromodel and a new form of the authors' electrothermal (including selfheating) macromodel of SG3525A controller are presented and compared. To illustrate the correctness and usefulness of these macromodels, some results of measurements and calculations of SG3525A controller operating in the catalogue test circuit and in the real BOOST converter are given as well."
}
@article{Shrestha2006735,
title = "Comparative studies on electronic transport due to the reduced dimensionality at the heterojunctions of GaAs/A1xGa(1−x)As and GaxIn(1−x)As/InP systems at low temperatures",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "735 - 741",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003915",
author = "S. Shrestha and C.K. Sarkar",
keywords = "Heterojunctions",
keywords = "Low field transport",
keywords = "Low dimensional systems",
abstract = "Comparative studies on ac/dc mobility due to the reduced dimensionality of spatially confined low dimensional systems, at the heterojunctions of GaAs/A1xGa(1−x)As and GaxIn(1−x)As/InP forming quasi-two dimensional (Q2D) and quasi-one dimensional (Q1D) systems have been made. The effect of various low temperature nonphonon scattering mechanisms such as ionized impurity, alloy disorder scattering and surface roughness scattering mechanisms; and phonon scattering mechanisms such as acoustic phonon via deformation potential and piezoelectric scattering mechanisms on the systems has been studied. It is found that the surface roughness scattering mechanism dominates in Q2D system whereas acoustic phonon scattering mechanism dominates in Q1D system due to which the nature and magnitude of the temperature dependent dc/ac mobility curves shows significant variation. Whereas, it is observed that the confinement does not change the nature of the frequency dependent real and imaginary parts of ac mobility curves. However, the mobility is found to be enhanced with effective mass and also due to the confinement, i.e. the mobility for Q1D system is higher than that for Q2D system."
}
@article{Gao2006742,
title = "Quantum-confined Stark shift in electroreflectance of a cylindrical GaN quantum dot",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "742 - 745",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003800",
author = "Haiyan Gao and Guiguang Xiong and Xiaobo Fenga",
keywords = "Quantum dot",
keywords = "Quantum-confined stark shift",
keywords = "Franz–Keldysh oscillation",
abstract = "The electroreflectance (ER) spectra in the presence of the modulated electric field have been employed to study the fine structure of a cylindrical GaN quantum dot (QD), including the light hole and heavy hole interband transitions, and the ER spectra exhibit Franz–Keldysh oscillation characteristics with abscissa of energy (E−Eg). The quantum-confined Stark shift (QCSS) happened when the electric field intensity increased and the light and heavy holes dependent characteristics have been shown. The three-dimensional Schrödinger equation of QD has been calculated within the framework of effective-mass approximation, and the ER indices have been obtained from modulation absorption coefficients using the Seraphin coefficients and the Kramer–Kroning relation."
}
@article{Yang2006746,
title = "Experimental analysis and optimization of a photo resist coating process for photolithography in wafer fabrication",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "746 - 751",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003733",
author = "Yung-Kuang Yang and Tsun-Ching Chang",
keywords = "Photo resist",
keywords = "Spin coating",
keywords = "Taguchi method",
keywords = "Optimization",
keywords = "ANOVA",
abstract = "This investigation is applied the Taguchi method and combination the analysis of variance (ANOVA) to the photo resist (PR) coating process for photolithography in wafer manufacturing. Plans of experiments via nine experimental runs are based on the orthogonal arrays. In this study, the thickness mean and the uniformity of thickness of the PR are adopted as the quality targets of the PR coating process. This partial factorial design of the Taguchi method provides an economical and systematic method for determining the applicable process parameters. Furthermore, the ANOVA prediction of the thickness mean and the uniformity of thickness for the PR has been applied in terms of the PR temperature, chamber humidity, spinning rate, and dispensation rate by means of the designs of experiments (DOE) method. The PR temperature and the chamber humidity are found to be the most significant factors in both the thickness mean and the uniformity of thickness for a PR coating process. Finally, the sensitivity study of optimum process parameters was also discussed."
}
@article{Albina2006752,
title = "Impact of the surface roughness on the electrical capacitance",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "752 - 758",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003769",
author = "A. Albina and P.L. Taberna and J.P. Cambronne and P. Simon and E. Flahaut and T. Lebey",
keywords = "Dielectric capacitor",
keywords = "Surface roughness",
keywords = "Activated carbon",
keywords = "Carbon nanotubes",
keywords = "Roughness accessibility",
abstract = "A new hybrid approach consists to use the advantages of both systems namely the high geometric aspects of the electrodes of the ultracapacitor and the high dielectric strength of polymer materials used in dielectric capacitors. The surface roughness of the electrodes of the ultracapacitor is manufactured with nano-porous materials; activated carbon and carbon nanotubes (CNTs).
Many compositions of both carbonaceous materials are tested with different insulating materials (liquid and solid) to constitute the hybrid capacitor. It appears that the capacitance increases with the carbonaceous composition: An increasing from 15 to 40% is observed as compared to a plane capacitor, it can be twice with a 100 wt% of CNTs content. But, the impregnation of the insulating material in the surface roughness remains the key point of the realization of the hybrid capacitor. The roughness accessibility is a major property to optimize in order to improve the impregnation of the insulating material to increase the electrical capacitance."
}
@article{Kuo2006759,
title = "Control ability of spin coating planarization of resist filmand optimal control of developers",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "759 - 764",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003782",
author = "Yang-Kuao Kuo and Chuen-Guang Chao",
keywords = "Photolithography",
keywords = "Spin Coating",
abstract = "The issue of how to transfer a pattern onto a wafer during photolithography is very important. Normally, the resist is treated as a pattern-transferring medium. Such a medium should have a very smooth surface to reduce the focus error. In this experiment, spin coating is used. The velocity of the center differs from that of the outer edges of a rotating disk, so a perfectly smooth surface cannot be obtained. Therefore, resist temperature, cooling temperature, heating temperature, cup temperature, cup humidity and exhaust pressure were controlled to eliminate this imperfection to yield an acceptable error. A lower cooling temperature yields a thicker center, such that the surface of the wafer protrudes at the center. A lower cooling temperature also corresponds to a thicker center, with the same effect. The cup temperature was set to the cooling temperature so that thickness distribution would be the same as. A higher heating temperature yields a thinner wafer. Higher humidity yields a thinner wafer."
}
@article{Biswas2006765,
title = "Analysis and prevention of convex corner undercutting in bulk micromachined silicon microstructures",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "765 - 769",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003794",
author = "K. Biswas and S. Das and S. Kal",
keywords = "Corner undercutting",
keywords = "Anisotropic etching",
keywords = "MEMS",
keywords = "Beveling",
keywords = "Compensation patterns",
abstract = "Convex corner undercutting in <100> silicon is an undesired phenomena during bulk micromachining of crystalline silicon substrate using anisotropic wet chemical etching process. The present investigation concentrates on the studies of convex corner undercutting at the free end of silicon cantilever beams released by anisotropic etching process. It also reports a simple, space efficient compensation design for complete prevention of corner deformation. Various compensation patterns such as square, rectangle and superposition of square and rectangular blocks of various dimensions have been employed at the free end corners of cantilever beam to protect corner deformation due to undercutting. The experiment was carried out in 44 wt.% KOH at 70 °C using <100> oriented silicon wafer. Both n-type and p-type silicon wafers were used to study the variations in the nature of corner deformation. A simple empirical relation has been obtained from the experimental data to calculate the lateral dimensions of the compensation layout from the total etch depth required to release the structure."
}
@article{Caronti2006770,
title = "Capacitive micromachined ultrasonic transducer (CMUT) arrays for medical imaging",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "770 - 777",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003812",
author = "Alessandro Caronti and G. Caliano and R. Carotenuto and A. Savoia and M. Pappalardo and E. Cianci and V. Foglietti",
keywords = "Capacitive ultrasonic transducers (CMUTs)",
keywords = "Medical imaging",
keywords = "Micromachining",
keywords = "MEMS",
abstract = "Capacitive micromachined ultrasonic transducers (CMUTs) bring the fabrication technology of standard integrated circuits into the field of ultrasound medical imaging. This unique property, combined with the inherent advantages of CMUTs in terms of increased bandwidth and suitability for new imaging modalities and high frequency applications, have indicated these devices as new generation arrays for acoustic imaging. The advances in microfabrication have made possible to fabricate, in few years, silicon-based electrostatic transducers competing in performance with the piezoelectric transducers. This paper summarizes the fabrication, design, modeling, and characterization of 1D CMUT linear arrays for medical imaging, established in our laboratories during the past 3 years. Although the viability of our CMUT technology for applications in diagnostic echographic imaging is demonstrated, the whole process from silicon die to final probe is not fully mature yet for successful practical applications."
}
@article{Park2006778,
title = "Low voltage CCD image sensor with optimized reset operation",
journal = "Microelectronics Journal",
volume = "37",
number = "8",
pages = "778 - 782",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003770",
author = "Sangsik Park and Hyungsoo Uh and Soeun Park",
keywords = "CCD",
keywords = "Image sensor",
keywords = "Reset",
keywords = "Charge injection",
keywords = "Threshold voltage",
abstract = "A charge coupled device (CCD) image sensor operating with 3.0 V-reset has been developed using a charge injection to the gate dielectrics of a MOS structure. A DC bias generating circuit was added to the reset structure, which sets reference voltage and holds the signal charge to be detected. The generated Dc bias is added to the reset pulse to give an optimized voltage margin to the reset operation, and is controlled by adjustment of the threshold voltage of a MOS transistor in the circuit. By the pulse-type stress voltage applied to the gate, the electrons and holes were injected to the gate dielectrics, and the threshold voltage could be adjusted ranging from 0.2 to 5.5 V, which is suitable for controlling the incomplete reset operation due to the process variation. The charges trapped in the silicon nitride lead to the positive and negative shift of the threshold voltage, and this phenomenon is explained by Poole–Frenkel conduction and Fowler–Nordheim conduction. A CCD image sensor with 492(H)×510(V) pixels adopting this structure showed complete reset operation with the driving voltage of 3.0 V. The image taken with the image sensor utilizing this structure was not saturated to the illumination of 30 lux, that is, showed no image distortion."
}
@article{Lin2006565,
title = "Reliability analysis of the fine pitch connection using anisotropic conductive film (ACF)",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "565 - 568",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003691",
author = "Chao-Ming Lin and Win-Jin Chang and Te-Hua Fang",
keywords = "Anisotropic conductive film (ACF)",
keywords = "Flip chip packaging",
keywords = "Probability",
keywords = "Opening",
keywords = "Bridging",
keywords = "Failure",
keywords = "Volume fraction",
keywords = "V-shaped curve",
abstract = "A novel method (the V-shaped curve) is presented to predict the failure probability of anisotropic conductive film (ACF) in IC/substrate assemblies. The Poisson function is used to calculate the probability of opening failure in the vertical gap between the pads, while the box and modified box models are used to estimate the probability of bridging failure between the pads in the pitch direction. The opening and bridging probabilities are combined using probability theory to establish four different failure prediction models. The results reveal that the model combining the Poisson function for fewer than six particles per pad with the modified box model provides the most accurate predictions of the failure probability of ACF in IC/substrate assemblies."
}
@article{Zhang2006569,
title = "Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "569 - 573",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003629",
author = "Fei Zhang and Lina Shi and Wen Yu and Chengfang Li and Xiaowei Sun",
keywords = "Insulated gate bipolar transistor",
keywords = "Power device",
keywords = "Novel buffer",
keywords = "Better trade-off",
abstract = "For the first time, an insulated gate bipolar transistor with a novel buffer is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing a three-step, gradually changing doping n+ structure. Compared with the conventional IGBT, the proposed device exhibits better trade-off relation between the conduction and switching losses. The turn-off time is halved from 9.4 μs of the conventional IGBT to 4.5 μs of the proposed device, so the operation speed of the proposed device is greatly improved. Further, the forward blocking voltage is enormously increased from 907 V of the proposed device to 1278 V of the proposed device, which is required for high power operation."
}
@article{Chen2006574,
title = "A novel double RESURF LDMOS and a versatile JFET device used as internal power supply and current detector for SPIC",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "574 - 578",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003563",
author = "Wanjun Chen and Bo Zhang and Zhaoji Li",
keywords = "RESURF LDMOS",
keywords = "SPIC",
keywords = "Current detector",
keywords = "JFET",
keywords = "Power supply",
abstract = "In this paper, a novel double RESURF LDMOS with multiple rings in non-uniform drift region is proposed and successfully fabricated. The proposed device maximizes the benefits of the double RESURF technique by optimizes key process and device geometrical parameters in order to achieve the lowest on-resistance with the desired breakdown voltage. In addition, a versatile JFET device is firstly developed. The JFET device cannot only be used as the current detector, but also be used as the internal power supply for SPIC. Besides, it is compatible with Bipolar-CMOS technology, without any additional processes required."
}
@article{Huq2006579,
title = "AlGaN/GaN self-aligned MODFET with metal oxide gate for millimeter wave application",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "579 - 582",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003666",
author = "Hasina F. Huq and Syed K. Islam",
keywords = "Liquid phase deposited (LPD)",
keywords = "AlGaN/GaN",
keywords = "Self-aligned MOSFET",
keywords = "Unity current gain cut-off frequency (fT)",
abstract = "As promising candidates for future microwave power devices, GaN-based high-electron mobility transistors (HEMTs) have attracted much research interest. An investigation of the operation of AlGaN/GaN n type self-aligned MOSFET with modulation doped GaN channels is presented. Liquid phase deposited (LPD) SiO2 is used as the insulating material. An analytical model based on modified charge control equations is developed. The investigated critical parameters of the proposed device are the maximum drain current (IDmax), the threshold voltage (Vth), the peak DC trans-conductance (gm), break down voltage (Vbr) and unity current gain cut-off frequency (fT). The typical DC characteristics for a gate length of 1 μm with 100 μm gate width are following: Imax=800 mA/mm, Vbreak-down=50 V, gm_extrinsic=200 mS/mm, Vpinchoff=−10 V. The analysis and simulation results on the transport characteristics of the MOS gate MODFET structure is compared with the previously measured experimental data. The calculated values of fT (20–130 GHz) suggest that the operation of the proposed device effectively, has sufficiently high current gain cutoff frequencies over a wide range of drain voltage, which is essential for high-power performance at microwave frequencies. The proposed device offers lower on-state resistance. The results so obtained are in close agreement with the experimental data."
}
@article{Ran2006583,
title = "Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "583 - 585",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500368X",
author = "Junxue Ran and Xiaoliang Wang and Guoxin Hu and Junxi Wang and Jianping Li and Cuimei Wang and Yiping Zeng and Jinmin Li",
keywords = "GaN",
keywords = "Mg memory effect",
keywords = "Redistribution",
keywords = "AlGaN/GaN HBTs",
keywords = "MOCVD",
abstract = "AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter–base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in the base section by switching off the Cp2Mg source for appropriate time before the end of base growth. Low temperature growth of the undoped GaN spacer suppresses the Mg redistribution from Mg rich film. The delay rate of the Mg profile in sample C with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples A and B without low temperature spacer."
}
@article{Bouzrara2006586,
title = "Alloy splitting of Te-DX in AlxGa1−xAs analysis using the deep level transient spectroscopy technique",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "586 - 590",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003605",
author = "L. Bouzrara and R. Ajjel and H. Mejri and M.A. Zaidi and H. Maaref",
abstract = "The paper reports on a deep level transient spectroscopy analysis of Te-related DX centers in AlxGa1−xAs with aluminum composition x=0.40. As was shown from experimental results, the state energy of this trap shows a microscopic structure due to an alloy effect. A theoretical analysis based on a multi-step scheme has been made to explain the electron emission from a multiconfigurate center. Using this model, we derived the binding energies of the splitted Te-DX states in the alloy material studied."
}
@article{Kronholz2006591,
title = "Metallic nanogaps with access windows for liquid based systems",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "591 - 594",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.031",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003678",
author = "Stephan Kronholz and Silvia Karthäuser and A.van der Hart and T. Wandlowski and Rainer Waser",
keywords = "Lithographie",
keywords = "Electron beam",
keywords = "Nanogap",
keywords = "Protection layer",
keywords = "Access window",
keywords = "Liquid based system",
abstract = "A new method has been established for the reproducible fabrication of high quality, metallic nanogaps on silicon chips suitable for liquid based nanometer scale devices. Realization of μm structures connected to nanogaps with gap sizes down to 30 nm has been achieved by a combination of an optical and an electron-beam (e-beam) lithography step using an optimised adhesion layer/metallic layer combination (Ti/Pt/Au—three layer combination) and an adopted two layer e-beam resist. The quality of the interconnects between optically and e-beam lithographically defined structures and the surface roughness of the gold nanogaps have been improved by a controlled temperature treatment. With this method the production of a variety of different gap shapes could be demonstrated. Specifically the lithographic structures have been successfully covered by a protection layer, except of a 200 nm×400 nm size access window located on top of the nanogaps, making it suitable for applications in liquid environment such as molecular and/or electrochemical metal deposition."
}
@article{Tian2006595,
title = "Temperature dependence of DC characteristics of NpN InP/GaAsSb/InP double heterojunction bipolar transistors: an analytical study",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "595 - 600",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003617",
author = "Yuan Tian and Hong Wang",
keywords = "InP/GaAsSb HBTs",
keywords = "Current mechanisms",
keywords = "Current gain",
keywords = "Temperature dependence",
abstract = "An analytic study of DC characteristics based on the drift-diffusion approach has been performed for the InP/GaAsSb DHBTs. The current transport of InP/GaAsSb/InP DHBTs has been investigated focusing the device temperature dependence. Our simulation results show that, at room temperature, the DC characteristics of the InP/GaAsSb/InP DHBTs similar to the conventional InP-based HBT using InGaAs as the base layer although a type-II energy band alignment is presented in the InP/GaAsSb HBT. However, due to different mechanisms for the electron injection from the emitter induced by the different conduction band alignments, the InP/GaAsSb HBTs may present a different temperature dependent behavior in term of device current gain as compared to the conventional InP/InGaAs HBTs. Higher current gain could be achieved by the InP/GaAsSb HBTs at elevated temperature."
}
@article{Galeti2006601,
title = "Evaluation of graded-channel SOI MOSFET operation at high temperatures",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "601 - 607",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003642",
author = "Milene Galeti and Marcelo Antonio Pavanello and João Antonio Martino",
keywords = "Graded-channel",
keywords = "SOI MOSFET",
keywords = "High-temperature",
keywords = "Fully depleted",
keywords = "New structure",
abstract = "This paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300 °C). The electrical characteristics such as threshold voltage and subthreshold slope were obtained experimentally and by two-dimensional numerical simulations. The results indicated that GC transistors present nearly the same behavior as the conventional SOI MOSFET devices with similar channel length. Experimental analysis of the gm/IDS ratio and Early voltage demonstrated that in GC devices the low-frequency open-loop gain is significantly improved in comparison to conventional SOI devices at room and at high-temperature due to the Early voltage increase. The multiplication factor and parasitic bipolar transistor gain obtained by two-dimensional numerical simulations allowed the analysis of the breakdown voltage, which was demonstrated to be improved in the GC as compared to conventional SOI transistors in thin silicon layer devices in the whole temperature range under analysis."
}
@article{Chan2006608,
title = "Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "608 - 612",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.016",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500354X",
author = "Kah-Yoong Chan and Teck-Yong Tou and Bee-San Teo",
keywords = "Copper",
keywords = "Sputtering",
keywords = "Film thickness",
keywords = "Structural properties",
keywords = "Electrical properties",
abstract = "This paper addresses the influences of film thickness on structural and electrical properties of dc magnetron sputter-deposited copper (Cu) films on p-type silicon. Cu films with thicknesses of 130–1050 nm were deposited from Cu target at sputtering power of 125 W in argon ambient gas pressure of 3.6 mTorr at room temperature. The electrical and structural properties of the Cu films were investigated by four-point probe, atomic force microscopy (AFM) as well as X-ray diffraction (XRD). Results from our experiment show that the grain grows with increasing film thickness, along with enhanced film crystallinity. The root mean square (RMS) roughness as well as the lateral feature size increase with the Cu film thickness, which is associated with the increase in the grain size. On the other hand, the Cu film resistivity decreases to less than 5 μΩ-cm for 500 nm thick film, and further increase in the film thickness has no significant effects on the film resistivity. Possible mechanisms of film thickness dependent microstructure formation of these Cu films are discussed in the paper, which explain the interrelationship of grain growth and film resistivity with increasing Cu film thickness."
}
@article{Hu2006613,
title = "Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "613 - 619",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003587",
author = "Weida Hu and Xiaoshuang Chen and Xuchang Zhou and Zhijue Quan and Lu Wei",
keywords = "FinFET",
keywords = "Double-gate MOSFET",
keywords = "Quantum-mechanical effect",
keywords = "Gate leakage current",
keywords = "Numerical Simulation",
abstract = "This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson–Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 1017 cm−3 with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure."
}
@article{Kabra2006620,
title = "A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "620 - 626",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003575",
author = "Sneha Kabra and Harsupreet Kaur and Ritesh Gupta and Subhasis Haldar and Mridula Gupta and R.S. Gupta",
keywords = "GaN",
keywords = "MESFET",
keywords = "Velocity field relationship",
keywords = "Wide band gap semiconductor",
abstract = "A semi empirical model has been proposed for sub-micron GaN MESFET's to calculate the I–V characteristics using an accurate velocity-field relationship obtained by fitting it with the Monte Carlo (MC) simulation. The results so obtained are compared with the experimental results to validate our model and are also compared with the results obtained from the simple saturation model to present the influence of electron drift velocity modeling on the device parameters. The model has been extended to predict the microwave parameters such as transconductance and output conductance of the device."
}
@article{DeVita2006627,
title = "Ultra-low power PSK backscatter modulator for UHF and microwave RFID transponders",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "627 - 629",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.033",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003526",
author = "G. De Vita and F. Bellatalla and G. Iannaccone",
keywords = "Backscatter modulation",
keywords = "Transponder",
keywords = "RFID",
keywords = "Low power",
abstract = "An integrated circuit implementation of a PSK backscatter modulator for passive radio frequency identification (RFID) transponders is proposed. Such modulator offers a significant reduction of the power consumption with respect to other schemes already presented in the literature. Furthermore, the topology of the proposed modulator allows us to control its output resistance so that only a negligible fraction of the active power at the antenna goes to the modulator."
}
@article{Eloy2006630,
title = "Nanometer range: A new theoretical challenge for microelectronics and optoelectronics",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "630 - 634",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003630",
author = "Jean-François Eloy and Michel Depeyrot",
abstract = "The equation is identified, from a couple of odd percussions, which yields the pilot wave forming the aura of a particle in the space conjugate to the four-dimensional space of direct experience. This leads to a substitute of the Copenhagen Interpretation providing the frame for demonstrating Heisenberg's uncertainty principle through a theorem of Fourier analysis. Revisiting the method of space-time domain paves the way to a new era of developments, by considering that a trapped particle located in a bounded bi-dimensional space, having less than 1 eV of kinetic energy, should have an associated wavelength representing a fraction of a wave cycle. In order to face the challenge, a new optoelectronics concept is proposed to contend with the broadening of the frequency bandwidth for a particle-wave trapped in a single-electron box: quasi-virtual electrons, trapped in nanometric single-electron thin boxes, interact by absorption–emission processes with coherent electromagnetic radiations. The migration is proposed for nanoelectronic transistor fabrication from semiconductor to semi-refractor materials."
}
@article{Benfdila2006635,
title = "On the drain current saturation in short channel MOSFETs",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "635 - 641",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003599",
author = "A. Benfdila and F. Balestra",
abstract = "Submicron MOSFETs are the issue for ULSI integrated circuits. However, drastic reduction of device size leads to a complex modeling of the MOSFET drain current, which is affected by the electrical and physical phenomena induced by the low device dimension. Several current models are proposed to explain the drain current behavior in the saturation region of the ID–VD characteristic curve. Mainly, we can distinguish two types: long channel and short channel current modeling. In the present work, a survey of current voltage models is presented aiming a contribution to the interpretation of the current behavior in the saturation region of the I–V curves, i.e. non-saturation of the drain current, which are critical in submicronic devices."
}
@article{Kinder2006642,
title = "Investigation of the implanted phosphorus in a boron doped SiGe epitaxial layer",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "642 - 645",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002995",
author = "R. Kinder and A. Vincze and M. Kuruc and R. Srnánek and B. Lojek and B. Sopko and D. Chren",
keywords = "SiGe",
keywords = "Phosphorus",
keywords = "Doping profile",
keywords = "SIMS",
keywords = "Spreading resistance",
keywords = "DIOS",
abstract = "Phosphorus diffusion into strained SiGe layers was studied by different methods. Doping profiles and carrier concentration profiles N(x), depth of pn junction, Ge content in SiGe and thickness of epitaxial layer were measured and simulated. Several experimental methods such as secondary ion mass spectroscopy, spreading resistance method, Raman spectroscopy—and process simulator ISE TCAD have been used. The results obtained by different methods and at different places of work have been compared and analysed."
}
@article{EM2006646,
title = "Systematic derivation of explicit design formulae for log-domain: A 3rd-order lowpass example",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "646 - 656",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.08.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003551",
author = "E.M. and Drakakis",
keywords = "Log-domain",
keywords = "Analog integrated filters",
abstract = "The operational simulation of passive prototypes in log-domain is feasible either by means of state-space-based techniques or by transforming the SFG corresponding to the linear prototype. However, the correlation of the prototype element values with circuit parameter (i.e. capacitor and biasing current) values constitutes a synthesis step, which is not explained in detail by the available literature and usually entails a considerable amount of expertise. This paper aims at elaborating one possible way of such an explicit correlation by means of the concept of the Intermediate Transfer Function. An exemplary 3rd-order LP ladder Chebychev response is synthesised and analytic design relations are systematically derived.
The resulting general formulae allow the engineer to explore several possible design freedom parameters as far as the filter topology selection and its performance are concerned. HSPICE simulation results are provided."
}
@article{ClóvesG2006657,
title = "Electron mobility in n-doped zinc sulphide",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "657 - 660",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002375",
author = "Clóves G. and Rodrigues",
keywords = "Semiconductors",
keywords = "Theory of electron transport",
keywords = "Electron conduction",
keywords = "Electron field effect",
abstract = "A study of the mobility of n-doped wurtzite and zincblende ZnS is reported. We have determined nonequilibrium thermodynamic state of the ZnS—driven far away from equilibrium by a strong electric field—in the steady state. The dependence of the mobility (which depends on the nonequilibrium thermodynamic state of the sample) on the electric field strength is derived, which decreases with the strength of electric field. We analyzed the contributions to the mobility arising out of the different channels of electron scattering, namely, the polar optic, deformation, interactions with the phonons, and with ionized impurities. The case of n-ZnS WZ and ZB have been analyzed: as expected the main contribution comes from the polar-optic interactions in this strong-polar semiconductor. The other interactions are in decreasing order, the deformation acoustic and the one due to impurities."
}
@article{Sun2006661,
title = "A review of safe operation area",
journal = "Microelectronics Journal",
volume = "37",
number = "7",
pages = "661 - 667",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002946",
author = "Zhilin Sun and Weifeng Sun and Longxing Shi",
abstract = "For designing LDMOS, SOA is an important and complex parameter which is defined by current, voltage, waveform, pulse time, etc. In this paper, short-term and long-term factors that determine the SOA boundary are demonstrated. Methods to improve SOA are enumerated."
}
@article{Humenyuk2006475,
title = "Development of pNH4-isfets microsensors for water analysis",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "475 - 479",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.024",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500337X",
author = "I. Humenyuk and B. Torbiéro and S. Assié-Souleille and R. Colin and X. Dollat and B. Franc and A. Martinez and P. Temple-Boyer",
keywords = "ChemFET sensor",
keywords = "pNH4",
keywords = "Water analysis",
abstract = "Front-side connected, N-channel, normally-off, SiO2/Si3N4 chemical field effect transistor (ChemFET) microsensors have been fabricated using a standard P-well silicon technology. These ChemFETs microsensors were adapted to ammonium ion detection thanks to photosensitive polysiloxane (PSX) polymer containing nonactine as an ionophore. The ammonium-sensitive membrane has been deposited either manually by micropipette, either by spin coating and patterned using photolithography technique. Both processes have been studied and compared through the ammonium ion determination. The manually deposed layers have been characterised by thickness non-reproducibility. Therefore, spin-coated layers have good reproducibility, but their thickness of 30 μm has been responsible for an increase of the ISFET threshold voltage and a decrease of its bias current. Nevertheless, in both cases, good sensitivities have been shown on the (1–5) pNH4 range even if saturation phenomena have been evidenced for the lowest concentrations. These pNH4-ISFETs microsensors are developed for the monitoring of environmental pollution and more precisely for ground water analysis."
}
@article{Soetedjo2006480,
title = "Current–voltage behavior of AlGaAs/InGaAs pHEMT structures and the effect of optical illumination",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "480 - 482",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.025",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003344",
author = "Hariyadi Soetedjo and O. Mohd Nizam and Idris Sabtu and J. Mohd Sazli and Ashaari Yusof and Y. Mohd Razman and A.F. Awang Mat",
keywords = "pHEMT",
keywords = "AlGaAs/InGaAs",
keywords = "Optical illumination",
keywords = "Sensor.",
abstract = "Various pseudomorphic High Electron Mobility Transistor (pHEMT) structures of AlGaAs/InGaAs alloys have been observed their current–voltage behavior. The tungsten probes were used for a measurement the structures by ramping the voltage from −5 to 5 V and measure the electrical current. Measurement was carried out at room temperature and also under optical illumination. From the measurement, the electrical current was found to increase as the increase of Al content in the AlGaAs alloys layer in the pHEMT structure. This phenomenon was supported by the decrease of sheet resistance as obtained from Hall effect measurement. Under visible light illumination, the current–voltage behavior of pHEMT structure was observed to vary as the light power density was varied for 0, 25 and 55 μW/cm."
}
@article{Haško2006483,
title = "Avalanche photodiode with sectional InGaAsP/InP charge layer",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "483 - 486",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003368",
author = "D. Haško and J. Kováč and F. Uherek and J. Škriniarová and J. Jakabovič and L. Peternai",
keywords = "Avalanche photodiode",
keywords = "InGaAs/InP SACM structure",
keywords = "Device simulation",
abstract = "An InGaAs/InP avalanche photodiode (APD) with a sectional InGaAsP/InP charge layer at the heterointerface between the InGaAs absorption and InP multiplication region has been designed, fabricated and tested. We demonstrate a new APD structure that utilizes the sectional 140 nm thin charge layer and a 500 nm thin multiplication layer. The band diagram, electrical field distribution and current–voltage (I–V) characteristics up to punch-through voltage have been simulated. The fabricated mesa structure photodiode shows responsivity 0.9 A/W at 1310 nm at 20 V and avalanche gain up to 10 near breakdown voltage 36 V. The measured results revealed that the sectional charge layer could be used for control of the electric field profile in the APD structure."
}
@article{Peternai2006487,
title = "Investigation of graded InxGa1−xP buffer by Raman scattering method",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "487 - 490",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003356",
author = "L. Peternai and J. Kováč and G. Irmer and S. Hasenöhrl and J. Novák and R. Srnánek",
abstract = "The compositional changes of InxGa1−xP graded buffer inserted between GaP substrate and subsequently grown In0.36Ga0.64P homojunction LED structure were investigated by Raman spectroscopy. The indium content of InxGa1−xP interlayers was increased in eight steps with thickness of 300 nm and constant compositional change ΔxIn between the steps. The properties of InxGa1−xP graded buffer along the structure cross-section have been studied by Raman back scattering method and the changes in GaP LO and TO phonons were investigated. Raman shift of 13 cm−1 in GaP-like LO1 phonon was measured on beveled [ 100 ] surface for compositional change of InxGa1−xP layer in the range of 0<xIn<0.32. The measurements on the cleaved edge of the sample in [ 011 ] direction revealed a strong TO phonon at 366 cm−1 and weak LO phonon peak at 405 cm−1 in GaP substrate. By reaching the graded InxGa1−xP region the intensity of TO phonon decreases and appearance of considerable TO1 phonon shift up to 350 cm−1 for In content xIn=0.16 was observed. For upper graded layers with xIn from 0.16 to 0.24 the position of GaP-like TO1 was constant and can be ascribed to relaxation of lattice mismatched thin InxGa1−xP graded upper layers in the structure."
}
@article{Dakhlaoui2006491,
title = "Spin polarization in multilayer ferromagnetic semiconductor",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "491 - 494",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003022",
author = "H. Dakhlaoui and S. Jaziri",
abstract = "We focus on transport of electron spins, which spin-polarized currents can be controlled and manipulated via the electron energy and momentum. We study in this paper the electronic properties of ferromagnetic phase of a multilayer ferromagnetic semiconductor in the mean-field and effective mass approximations, as a result of the magnetic interaction between holes and Mn ions, the magnetic layers acts as potential barriers for holes with spin-up, and as potential wells for the inverse spin polarization. As an example we calculate the dependence of hole density and the spin polarization in terms of the band offset vw which describes the difference in electronegativity between the Mn and GaAs atoms. Our calculations are performed using a self-consistent procedure to solve Schrödinguer and Poisson equations taking into account the coulomb interaction between holes."
}
@article{Zeng2006495,
title = "The fabrication and operation of fully printed Carbon nanotube field emission displays",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "495 - 499",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500323X",
author = "Fan-Guang Zeng and Chang-Chun Zhu and Weihua Liu and Xinghui Liu",
keywords = "Carbon nanotube",
keywords = "Field emission display",
keywords = "Screen-printing",
keywords = "Brightness",
abstract = "Screen-printing is undoubtedly the most cost effective process for the fabrication of large-sized carbon nanotube field emission display (CNT-FED). A novel post-treatment method of mechnical crushing and blowing was presented to solve the problem of poor field emission properties of printed CNT films. The turn-on electric field of the treated film decreased and the emission current increased distinctly. Then a technique was developed to fabricate fully printed CNT-FED in which all the inner cells were fabricated by screen-printing process. Based on this technique, fully printed matrix-addressable diode CNT-FEDs, which can display moving image and be driven by the integrated drive circuits of commercial plasma display panel (PDP), were fabricated subsequently. A very high brightness of 1×104 cd/m2 can be achieved at 220 V."
}
@article{Shankar2006500,
title = "A rule-based computing approach for the segmentation of semiconductor defects",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "500 - 509",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.018",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500296X",
author = "N.G. Shankar and Z.W. Zhong",
keywords = "Machine vision",
keywords = "Clinical rule",
keywords = "Defect type",
keywords = "Referential inspection",
keywords = "Rule-based",
abstract = "This paper presents a rule-based approach to detect defect patterns and to classify the defect patterns that appear on the semiconductor wafer surfaces. To obtain a general and modular defect pattern detection technique, the proposed approach adopts a hierarchical perspective. A formal analogy has been drawn between the structure of defect patterns and the symptom of disease in clinical practice. The defect patterns to be recognized are viewed as decision made to a particular disease. Design goals include detection of flaws and correlation of defect features based on co-occurrence matrix. The system is capable of identifying the defects on the wafers after die sawing. Each unique defect structure is defined as an object. Objects are grouped into user-defined categories such as chipping, metallization peel off, silicon dust contamination, etc. after die sawing and micro-crack, scratch, ink dot being washed off, bridging, etc. from the wafer."
}
@article{Guimarães2006510,
title = "Design of a Hamming neural network based on single-electron tunneling devices",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "510 - 518",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002958",
author = "J.G. Guimarães and L.M. Nóbrega and J.C. da Costa",
keywords = "Single-electron",
keywords = "Neural network",
keywords = "Room temperature",
keywords = "Hamming network",
keywords = "Block",
keywords = "Recognition",
abstract = "In this paper, the first complete implementation of a Hamming neural network based on single-electron devices is presented. A large-scale network for character recognition simulation based on building block approach was successfully carried out. Simulations were done using SIMON and MATLAB softwares. Effects such as offset charges and dynamic behavior are taken into account. Moreover, room temperature operation is considered."
}
@article{Biswas2006519,
title = "Etch characteristics of KOH, TMAH and dual doped TMAH for bulk micromachining of silicon",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "519 - 525",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003009",
author = "K. Biswas and S. Kal",
keywords = "MEMS",
keywords = "Bulk micromachining",
keywords = "KOH",
keywords = "TMAH",
keywords = "Dual doped TMAH",
keywords = "Surface roughness",
keywords = "<111>/<100> Etch rate ratio",
abstract = "High precision bulk micromachining of silicon is a key process step to shape spatial structures for fabricating different type of microsensors and microactuators. A series of etching experiments have been carried out using KOH, TMAH and dual doped TMAH at different etchant concentrations and temperatures wherein silicon, silicon dioxide and aluminum etch rates together with <100> silicon surface morphology and <111>/<100> etch rate ratio have been investigated in each etchant. A comparative study of the etch rates and etched silicon surface roughness at different etching ambient is also presented.
From the experimental studies, it is found that etch rates vary with variation of etching ambient. The concentrations that maximize silicon etch rate is 3% for TMAH and 22 wt.% for KOH. Aluminum etch rate is high in KOH and undoped TMAH but negligible in dual doped TMAH. Silicon dioxide etch rate is higher in KOH than in TMAH and dual doped TMAH solutions. The <111>/<100> etch rate ratio is highest in TMAH compared to the other two etchants whereas smoothest etched silicon surface is achieved using dual doped TMAH. The study reveals that dual doped TMAH solution is a very attractive CMOS compatible silicon etchant for commercial MEMS fabrication which has superior characteristics compared to other silicon etchants."
}
@article{Semenov2006526,
title = "Novel gate and substrate triggering techniques for deep sub-micron ESD protection devices",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "526 - 533",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003010",
author = "O. Semenov and H. Sarbishaei and V. Axelrad and M. Sachdev",
keywords = "Electrostatic discharge (ESD)",
keywords = "Gate triggering",
keywords = "Substrate triggering",
keywords = "ESD robustness",
abstract = "As technology feature size is reduced, ESD becomes the dominant failure mode due to lower gate oxide breakdown voltage. In this paper, the effectiveness of new gate and substrate triggering techniques has been investigated to lower the trigger voltage of the LVTSCR and MOSFET based ESD protection circuits using 2D simulations and HBM/TLP measurements. The simulation results show that the using these techniques reduces the ESD triggering voltage by 63 and 44% for MOSFET-based and LVTSCR-based ESD structures, respectively, under 2 kV HBM ESD stress. The effectiveness of proposed gate and substrate triggering techniques is also confirmed by the HBM and TLP measurements."
}
@article{Yanli2006534,
title = "Experimental investigation on nonlinearities of PIN photodiodes",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "534 - 536",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002971",
author = "Yanli and Zhao",
keywords = "Nonlinearities",
keywords = "PIN photodiodes",
keywords = "Ohmic contact",
abstract = "In this report, we experimentally investigate nonlinearity of PIN photodiode as a function of incident light power with different bias. It is found that the nonlinearity can be related with effective resistance of this device itself. According to ambipolar diffusion model, the resistance is divided into two parts, i.e. intrinsic region resistance and series resistance originating from non-Ohmic contact. Forward Current (If)–Voltage(Vf) plots indicate that fabrication of high-quality Ohmic contact is necessary to improve linear performance for PIN photodiodes."
}
@article{Datta2006537,
title = "Two-dimensional numerical modeling of lightly doped nano-scale double-gate MOSFET",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "537 - 545",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002983",
author = "Deepanjan Datta and A. Ananda Prasad Sarab and S. Dasgupta",
keywords = "Nano-scale modeling",
keywords = "Double gate MOSFET",
keywords = "Quasi-static charge",
keywords = "Non-quasi-static charge",
keywords = "QM modeling",
abstract = "A two-dimensional numerical solution of electrostatic potential and electric field profiles are presented for lightly doped nano-scale Double-Gate Metal-Oxide-Semiconductor-Field-Effect-Transistor (DG-MOSFET). We have developed quasi-static (QS) model for evaluating bulk and inversion charges based on symmetric linearization model. We have also shown the non-quasi-static (NQS) effect on the charge due to a time varying gate voltage. It is seen that various symmetries of DG-MOSFET characteristics with respect to source/drain interchange is maintained in quasi-static as well as non-quasi-static version of the symmetrically linearized model. The variation of the threshold voltage with the varying width of the device is evaluated and presented. The results have been compared and contrasted with reported analytical model for QS condition for the purpose of verification of the model. The variation of threshold voltage along the width of the device is also predicted. This numerical model can be extended to analyze the transport phenomenon in sub 30 nm channel length DG-MOSFETs."
}
@article{Nedelchev2006546,
title = "Low sensitivity symmetrical response microwave filters",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "546 - 553",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.08.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003083",
author = "Marin Nedelchev and Dobri Dobrev",
keywords = "Chained filtering function",
keywords = "Low sensitivity microwave filters",
keywords = "Chebyshev polynomials",
abstract = "The paper proposes a modification of the chained filtering function for low sensitivity symmetrical response microwave filters. The new filtering function uses generalized Chebyshev polynomials as a seed function. The proper return loss grouping leads to low sensitivity filters. It is estimated and compared the responses' sensitivity of modified chained filter and Chebyshev filter. It is proven that the attenuation of the even order chained filters is 6 dB less than the corresponding Chebyshev filter."
}
@article{Galanis2006554,
title = "A design flow for speeding-up dsp applications in heterogeneous reconfigurable systems",
journal = "Microelectronics Journal",
volume = "37",
number = "6",
pages = "554 - 564",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.032",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003538",
author = "Michalis D. Galanis and Athanassios Milidonis and Athanassios P. Kakarountas and Costas E. Goutis",
keywords = "Heterogeneous reconfigurable system",
keywords = "Partitioning",
keywords = "Coarse-grain reconfigurable hardware",
keywords = "Field programmable gate array",
keywords = "Performance",
keywords = "Design flow",
abstract = "In this paper, we propose a method for speeding-up Digital Signal Processing applications by partitioning them between the reconfigurable hardware blocks of different granularity and mapping critical parts of applications on coarse-grain reconfigurable hardware. The reconfigurable hardware blocks are embedded in a heterogeneous reconfigurable system architecture. The fine-grain part is implemented by an embedded FPGA unit, while for the coarse-grain reconfigurable hardware our developed high-performance coarse-grain data-path is used. The design flow mainly consists of three steps; the analysis procedure, the mapping onto coarse-grain blocks, and the mapping onto the fine-grain hardware. In this work, the methodology is validated using five real-life applications; an OFDM transmitter, a medical imaging technique, a wavelet-based image compressor, a video compression scheme and a JPEG encoder. The experimental results show that the speedup, relative to an all-FPGA solution, ranges from 1.55 to 4.17 for the considered applications."
}
@article{Yang2006383,
title = "Simulation and optimization on the squeeze-film damping of a novel high-g accelerometer",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "383 - 387",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002934",
author = "Zunxian Yang and Xinxin Li",
keywords = "High-g accelerometer",
keywords = "Squeeze-film damping",
keywords = "Curved overload protection",
keywords = "Shock response",
abstract = "The damping characteristics of a packaged high-g accelerometer have been investigated in this paper. Firstly, a multi-segments-plates-approximate (MSPA) model on curved surface damping suitable for this component has been established to obtain the relationship between the parallel-shift-distance (PSD) of curved stop and the damping of component. Subsequently, not only the effect of the PSD of curved protection but also the impact of the characteristics of damping media on the dynamic shock response of the component has been studied with ANSYS FEM technology. Results show that the dynamic output responses of component were in reality the superposition of both the forced vibration under acceleration shock and the vibration of cantilever in its inherent frequency. With the increase of PSD, the inherent frequency vibration became outstanding in output response and both the peak output voltage and displacement of beam end increased linearly whereas its corresponding time decreased nonlinearly. The effects of damping media on the dynamic response characteristics of the component were attributed to the difference of viscosity coefficient of damping medium. Under the same other conditions, with increment of viscosity coefficient, the output response curve become smoother except for lower peak voltage. Therefore, the PSD of curved stop should be controlled between 0.5 and 0.65 μm during the fabrication of chip and if the PSD was about 0.5 μm, air would be the most suitable damping media in the packaging of the component."
}
@article{Bouzidi2006388,
title = "Analytic computation of the photocurrent density in a n-6H–SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "388 - 394",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.011",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500251X",
author = "A. Bouzidi and H. Hamzaoui and A.S. Bouazzi and B. Rezig",
keywords = "Photocurrent density",
keywords = "Multilayer solar cell",
keywords = "Simulation",
keywords = "Optimization",
abstract = "In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H–SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9 eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si0.8Ge0.2 with an energy gap equal to 0.8 eV). The impurity concentration in every layer of the model is taken equal to 1017 cm−3 to ensure abrupt junctions inside the cell. The optical properties of the separate layers have been fitted and tabulated to be used for thin films devices numerical simulation. We developed the equations giving the minority carrier concentration and the photocurrent density in each abscissa of the model. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM0 solar spectrum. The results of simulation showed that the optimized structure could deliver, assuming 105 cm/s surface recombination velocity, a photocurrent density of more than 53 mA/cm2, which represents 88.3% of the ideal photocurrent (59.99 mA/cm2) that can be generated under AM0 solar spectrum."
}
@article{Grimalsky2006395,
title = "Resonant excitation of microwave acoustic modes in n-GaAs film",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "395 - 403",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002491",
author = "V. Grimalsky and E. Gutierrez-D. and A. Garcia-B. and S. Koshevaya",
keywords = "GaAs film",
keywords = "Space charge waves",
keywords = "Acoustic waves",
keywords = "Negative differential conductivity",
keywords = "Resonant excitation",
keywords = "Piezoeffect",
keywords = "Deformation potential",
abstract = "Resonant excitation of coupled space charge-acoustic waves in thin n-GaAs film is theoretically investigated. Possible mechanisms of electroacoustic coupling are piezoeffect and deformation potential. The film is placed onto a substrate i-GaAs without an acoustic contact. The film includes two-dimensional electron gas with a high negative differential conductivity. A possibility of resonant excitation of acoustic modes of the film at the first and the second harmonic of input microwave signal has been demonstrated."
}
@article{Liu2006404,
title = "On the uniformity of field emission in screen printed CNT-cathodes: The effects of the cathode roughness",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "404 - 408",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002508",
author = "Weihua Liu and Changchun Zhu and Cao Meng and Fanguang Zeng",
keywords = "Carbon Nanotube",
keywords = "Field Emission",
keywords = "Display",
abstract = "The relationships between the cathode roughness such as protuberances and the trace of the electron beams were given by numerical result for the first time. Simulation results tell that a micron or sub-micron protuberances on the cathode will affect the electron trace remarkably and the divergence of the electron beam is sensitive to the size of protuberance. Further more, a quantitative result of effecting region of the protuberance was given. It's also revealed that the cathode roughness near the edge will give rise to the opportunity of the charge up of the insulator layer and miss addressing because of a raised divergent angle. And this conclusion was confirmed in luminescent pixels by the trails of electron beams, whose divergent angle was greatly increased by the edge field. According to the simulation result, a special treatment was adopted to enhance the uniformity of field emission, and a uniform luminescent pixels array was achieved."
}
@article{Cova2006409,
title = "Experimental and numerical study of the recovery softness and overvoltage dependence on p–i–n diode design",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "409 - 416",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.027",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500248X",
author = "P. Cova and R. Menozzi and M. Portesine",
keywords = "Power diodes",
keywords = "Reverse recovery",
keywords = "Electron irradiation",
abstract = "This work offers a reliability-oriented characterization of power p–i–n diodes turn-off transients. The softness of the turn-off and the snap-off voltage (defined as the threshold beyond which large, anomalous reverse overvoltages develop across the diode at turn-off) are investigated both experimentally and numerically for a wide set of diodes with different drift region width, resistivity and lifetime. In particular, lifetime control is obtained by electron irradiation at different doses. As a result, guidelines emerge for the design of the snubberless diode with optimum trade-off between switching speed and softness. It is also suggested that, for complete diode characterization, the well-known softness factor be accompanied by the snap-off voltage, i.e. the peak reverse voltage triggering anomalous oscillations in the turn-off transient."
}
@article{Liu2006417,
title = "Electrical and surface composition properties of phosphorus implantation in Mg-doped GaN",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "417 - 420",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.026",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002478",
author = "K.T. Liu and Y.K. Su and R.W. Chuang and S.J. Chang and Y. Horikoshi",
keywords = "P implantation",
keywords = "Hall effect measurement",
keywords = "XPS",
keywords = "Surface composition",
abstract = "Changes in electrical as well as surface composition such as chemical and electronic properties of Mg-doped p-type GaN by phosphorus implanting are systematically investigated using Hall effect and X-ray photoelectron spectroscopy (XPS) measurements. It is shown that p-type conductivity of Mg-doped GaN can be improved by implanting P atoms after a proper post-implantation annealing treatment, probably due to the reduction of self-compensation by P atoms substitution on N vacancy sites. XPS analysis is further found that the decrease of surface oxides and the shift of the surface Fermi level toward the valence band edge through P atoms introduced. These experimental results indicate that the P implantation is an effective method to improve p-type conductivity of Mg-doped GaN and reducing the surface barrier height, which can lead to a lower metal contact resistivity to p-type GaN."
}
@article{Bêche2006421,
title = "Conception of optical integrated circuits on polymers",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "421 - 427",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002788",
author = "B. Bêche and N. Pelletier and E. Gaviot and R. Hierle and A. Goullet and J.P. Landesman and J. Zyss",
keywords = "Microtechnologies",
keywords = "Microphotolithography",
keywords = "Spin on glass (SOG)",
keywords = "SU-8",
keywords = "Integrated optical circuits",
abstract = "The authors present a successful design, realisation and characterisation of single-mode TE00–TM00 rib optical waveguides composed of SU-8 polymer. For the simulation, a generic software package that provides an interactive and graphical environment for analysis by polarised Semi-Vectorial Finite Difference (SVFD) method of all kinds of integrated optical waveguides, such as buried channel, raised strip, rib, embedded, or ridge waveguides, has been implemented and tested. In this method we have taken into account the terms due to the interface between each layer. After realisation of various single mode optical waveguides on SU-8 polymer and Spin on Glass (SOG) like straight, S-bends, Y-junctions, Mach-Zehnder (MZ) interferometers, the linear absorption coefficient of energy αTE–TM of such rib waveguides have been measured and estimated, respectively, near 0.32 and 0.46 cm−1 for both optical modes TE00 and TM00 on Si/SiO2/SU-8 structures. These values yield optical losses of 1.36 and 2.01 dB/cm. Optical losses ascribed to Si/SiO2/SOG/SU-8 microstructures have been evaluated to 2.33 and 2.95 dB/cm for both polarisations. Hence, as a crucial step for designing polymer components devoted to microsensors applications (pressure, heat transfert), the SU-8 polymer appears as a promising candidate for integrated optics with low optical losses."
}
@article{Huang2006428,
title = "A Ku band four-stage PHEMT 1W MMIC power amplifier",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "428 - 432",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002776",
author = "C.W. Huang and S.J. Chang and W. Wu and C.L. Wu and C.S. Chang",
keywords = "Ku band",
keywords = "MMIC",
keywords = "GaAs",
keywords = "Four stages",
keywords = "Power amplifier",
abstract = "A successful development of a very high performance and reliable power PHEMT MMIC technology is reported. In this paper, a Ku-Band 1 W AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU application is demonstrated. This four-stage amplifier is designed to fully match for a 50 Ω input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz."
}
@article{Bigas2006433,
title = "Review of CMOS image sensors",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "433 - 451",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002764",
author = "M. Bigas and E. Cabruja and J. Forest and J. Salvi",
keywords = "CMOS image sensors",
keywords = "APS",
abstract = "The role of CMOS Image Sensors since their birth around the 1960s, has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect to CCD, such as lower power consumption, lower voltage operation, on-chip functionality and lower cost. Nevertheless, they are still too noisy and less sensitive than CCDs.
Noise and sensitivity are the key-factors to compete with industrial and scientific CCDs. It must be pointed out also that there are several kinds of CMOS Image sensors, each of them to satisfy the huge demand in different areas, such as Digital photography, industrial vision, medical and space applications, electrostatic sensing, automotive, instrumentation and 3D vision systems.
In the wake of that, a lot of research has been carried out, focusing on problems to be solved such as sensitivity, noise, power consumption, voltage operation, speed imaging and dynamic range. In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations. In conclusion, the State-of-the-art of CMOS Image Sensors."
}
@article{Jit2006452,
title = "Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "452 - 458",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002752",
author = "S. Jit and Neti V.L. Narasimha Murty",
keywords = "GaAs MESFETs",
keywords = "Microwave oscillator",
keywords = "Photovoltage",
keywords = "Gate-source capacitance",
keywords = "Gate-drain capacitance",
abstract = "A new analytical study of the photo-effects on common-source and common-drain microwave oscillators using a high pinch-off n-GaAs MESFET has been presented in this paper. The gate-area of the MESFET with a transparent/semitransparent metal at Schottky junction is assumed to be illuminated with optical radiation. The changes in the gate-source and gate-drain capacitances by an induced photovoltage across the Schottky junction due to the incident illumination have been utilized to model analytically the photo-dependent output frequency characteristics of the microwave oscillators. It has been observed from the numerical results that the output frequency of the common-source oscillator is highly influenced by the gate-source capacitance whereas that of the common-drain oscillator is sensitive to the change in the gate-drain capacitance. Further, in both of the oscillators, the output frequencies are decreased with the increase in the intensity level of the incident optical illumination."
}
@article{Golan2006459,
title = "Progress in vacuum photothermal processing (VPP)",
journal = "Microelectronics Journal",
volume = "37",
number = "5",
pages = "459 - 473",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002922",
author = "Gady Golan and Alex Axelevitch",
abstract = "Vacuum photothermal processing (VPP) is the follower of rapid thermal processing (RTP) in thin film technologies. It is clear now that simultaneous action of high energetic photons (more than 1.5 eV) and electron beam, significantly affect surfaces of thin film systems. Furthermore, the interfaces between metal contacts and semiconductors (Si, Ge) undergone this simultaneous influence, tend to vary their electronic properties. The novel VPP method decreases surface and interface roughness in metal–semiconductor contacts. The electrons flow while VPP may be controlled using a special tungsten grid attached to a DC voltage. This control in the electrons flow enables a smooth variation of the potential barrier amplitude within the metal–semiconductor contacts.
VPP experiments were done for following metal–semiconductors systems: Au, Ag, Al, Ti, Ni, In, Cu, V in contact with Si. The obtained results clearly indicate on a broad application range of the VPP process in semiconductors and in the thin film industry."
}
@article{Hassan2006275,
title = "Impact of technology scaling and process variations on RF CMOS devices",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "275 - 282",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.07.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003034",
author = "Hassan Hassan and Mohab Anis and Mohamed Elmasry",
keywords = "RF CMOS",
keywords = "Technology scaling",
keywords = "Process variations",
keywords = "Radio frequency",
keywords = "CMOS device",
abstract = "Inspired by the huge improvement in the RF properties of CMOS devices, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Moreover, the RF frequency performance of CMOS is investigated under the influence of process variations for different CMOS generations. Using the BSIM4 model, it is found that future CMOS technologies have high prospects in the RF industry and will continue challenging other technologies in the RF domain to be the dominant technology for RF transceivers and system-on-chip implementations."
}
@article{Harmatha2006283,
title = "Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "283 - 289",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.059",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002387",
author = "L. Harmatha and M. Ťapajna and V. Slugeň and P. Ballo and P. Písečný and J. Šik and G. Kögel",
keywords = "Czochralski-grown silicon",
keywords = "Nitrogen doping",
keywords = "Positron annihilation",
keywords = "Slow positron beam",
keywords = "MOS structure",
keywords = "Generation lifetime",
abstract = "Czochralski-grown nitrogen-doped (NCZ) silicon was studied using different methods. Measurements of interface traps density, effective generation lifetime and effective surface generation velocity were performed on selected Metal-Oxide-Semiconductor (MOS) structures. Application of the positron annihilation technique (PAS)—pulsed low energy positron system (PLEPS)—was focused on the detection of nitrogen-related defects in NCZ silicon in the near surface region. PAS—PLEPS technique gave relevant results on p-type NCZ silicon. Low sensitivity in the application to n-type NCZ silicon discriminates the PAS—PLEPS technique and should be alternated by other experimental technique. On the other hand, more pertinent measurement of generation lifetime was performed on MOS structures with n-type Si. Although the generation lifetime decreases in NCZ silicon, considerable lateral homogenization of the relaxation time was observed on the wafer."
}
@article{Baroni2006290,
title = "Modeling and gradient pattern analysis of irregular SFM structures of porous silicon",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "290 - 294",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.029",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002314",
author = "M.P.M.A. Baroni and R.R. Rosa and A. Ferreira da Silva and I. Pepe and L.S. Roman and F.M. Ramos and R. Ahuja and C. Persson and E. Veje",
keywords = "Porous silicon",
keywords = "KPZ equation",
keywords = "Gradient pattern analysis",
keywords = "Nanostructures",
abstract = "Technological applications in opto-electronic devices have increased the interest in characterizing porous silicon structure patterns. Due to its physical properties, solutions from KPZ 2D are adopted to simulate the structure of porous material interface whose spatial characteristics are equivalent to those found in porous silicon samples. The analysis of the simulated and real Scanning Force Microscopy (SFM) surfaces was done using the Gradient Pattern Analysis (GPA). We found that the KPZ 2D model presented asymmetry levels compatible with the irregular surfaces observed by means of SFM images of π-Si."
}
@article{Zhong2006295,
title = "Chemical mechanical polishing of polymeric materials for MEMS applications",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "295 - 301",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.016",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500234X",
author = "Z.W. Zhong and Z.F. Wang and Y.H. Tan",
keywords = "Polycarbonate",
keywords = "Poly-methyl methacryate",
keywords = "Chemical mechanical polishing",
keywords = "Material removal rate",
keywords = "Surface roughness",
keywords = "Analysis of variance",
abstract = "Polymeric materials such as polycarbonate (PC) and poly-methyl methacryate (PMMA) are replacing silicon as the major substrate in microfluidic system fabrication due to their outstanding features such as low cost and good chemical resistance. In this study, chemical mechanical polishing (CMP) of PC and PMMA substrates was investigated. Four types of slurry were tested on CMP of the polymers under the same process conditions. The slurry suitable for polishing PC and PMMA was then chosen, and further CMP experiments were carried out under different process conditions. Experimental results showed that increasing table speed or head load increased the material removal rates of the polymers. The polymeric surface quality after CMP was acceptable to most MEMS applications. Analysis of variance was also carried out, and it was found that the interaction of head load and table speed had a significant (95% confidence) effect on surface finish of polished PMMA. On the other hand, table speed had a highly significant (99% confidence) effect on surface finish of polished PC."
}
@article{EliahouNiv2006302,
title = "Design and analysis of a novel tunable optical filter",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "302 - 307",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002326",
author = "S. Eliahou-Niv and R. Dahan and G. Golan",
keywords = "Optical tunable-filter",
keywords = "Thin-film tilt interference filter",
keywords = "DWDM demultiplexer",
abstract = "In this paper, an improved design of a tunable optical filter device which is driven by a piezoelectric actuator is proposed. The device can be used either as a tunable optical filter for discrete wavelength alignment or as a dynamic optical filter. The tunable filter is electrostatically driven and consists of three main parts: The electromechanical stage, the suspension and the thin film optical filter. The electromechanical stage and the suspension were designed using graph presentation methods, studied numerically using the finite element method (FEM). The thin film optical filter was designed by a thin film design software. The electromechanical stage was integrated with the suspension and tested as an angular driver of thin-film tilt interference filter for dense-wavelength division demultiplexing system applications."
}
@article{Bigas2006308,
title = "Characterisation of electroplated Sn/Ag solder bumps",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "308 - 316",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002363",
author = "M. Bigas and E. Cabruja",
keywords = "Flip chip",
keywords = "Bumping",
keywords = "Sn/Ag",
keywords = "AES",
keywords = "EDS",
keywords = "Fine pitch",
abstract = "Environmental concerns as well as legal constraints have been pushing research on flip chip technology towards the development of lead-free solders and also to new deposition techniques [Z.S. Karim, R. Schetty, Lead-free bump interconnections for flip-chip applications, in: IEEE/CPMT 1nternational Electronics Manufacturing Technology Symposium, 2000, pp. 274–278, P. Wölflick, K. Feldmann, Lead-free low-cost flip chip process chain: layout, process, reliability, in: IEEE International Electronics Manufacturing Technology (IEMT) Symposium, 2002, pp. 27–34, M. McCormack, S. Jin, The design and properties of new, pb-free solder alloys, in: IEEE/CPMT International Electronics Manufacturing Technology Symposium, 1994, pp. 7–14, T. Laine-Ylijoki, H. Steen, A. Forsten, Development and validation of a lead-free alloy for solder paste applications. IEEE Transactions on Components, Packaging, and Manufacturing technology, 20(3) (1997) 194–198, D. Frear, J. Jang, J. Lin, C. Zhang, Pb-free solders for flip-chip interconnects, JOM, 53(6) (2001) 28–32].
Binary and ternary tin alloys are promising candidates to substitute lead-content components. In this paper, we describe an electroplating technique for high density FlipChip packaging [M. Bigas, E. Cabruja, Electrodeposited Sn/Ag for flip chip connection, CDE (2003)]. An analysis using Auger Electron Spectroscopy (AES) together with additional Energy Dispersive Xray analysis (EDS) tests and Scanning Electron Microscope (SEM) analysis have been performed to optimize the reflow process of the electrodeposited bumps."
}
@article{Ling2006317,
title = "Modeling and simulation development of electron beam resist based on cellular automata",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "317 - 320",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002338",
author = "Li Ling and Long Shibing and Wang Congshun and Wu Wengang and Hao Yilong and Liu Ming",
keywords = "Computer simulation",
keywords = "Cellular Automata",
keywords = "Electron Beam Resist",
keywords = "Resist development",
abstract = "This paper presents a robust Cellular Automata model which predicts the two dimensional development profile as a function of development time, exposure dose and electron beam resist type.
The main advantage of CA model is that they exhibit high efficiency and accuracy when handling arbitrarily complex system. In the CA method, A resist is represented by an array of discrete cells that reside in a crystalline lattice. Development of the resist is represented by removal and of individual cell according to development rules. During development, the decision to remove or retain a particular cell is based on the link status of its lattice neighbors according to cell-removal rules, The link status is categorized by number of neighboring cells and their relative positions. The modeling approach also uses Monte-Carlo simulation of electron scattering and energy dissipation and a simple development rate versus dose model for the resist. An absolute quantitative evaluation of the simulation accuracy is made based on resist exposure-development measurement and comparisons with SEM micrographs of experimental profiles of PMMA, SAL601 and ZEP520.The comparisons show good quantitative agreement and indicate the model based on CA can be used as a quantitative processing aid. Simulation results illustrate the importance of resist, beam and dose."
}
@article{Biswas2006321,
title = "Bulk micromachining of silicon in TMAH-based etchants for aluminum passivation and smooth surface",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "321 - 327",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002302",
author = "K. Biswas and S. Das and D.K. Maurya and S. Kal and S.K. Lahiri",
keywords = "MEMS",
keywords = "TMAH",
keywords = "Bulk micromachining",
keywords = "Dual doping",
keywords = "Aluminum passivation",
keywords = "Piezoresistive accelerometer",
abstract = "The fabrication of silicon based micromechanical sensors often requires bulk silicon etching after aluminum metallization. All wet silicon etchants including ordinary undoped tetramethyl ammonium hydroxide (TMAH)–water solution attack the overlaying aluminum metal interconnect during the anisotropic etching of (100) silicon. This paper presents a TMAH–water based etching recipe to achieve high silicon etch rate, a smooth etched surface and almost total protection of the exposed aluminum metallization. The etch rate measurements of (100) silicon, silicon dioxide and aluminum along with the morphology studies of etched surfaces are performed on both n-type and p-type silicon wafers at different concentrations (2, 5, 10 and 15%) for undoped TMAH treated at various temperatures as well as for TMAH solution doped separately and simultaneously with silicic acid and ammonium peroxodisulphate (AP). It is established through a detailed study that 5% TMAH–water solution dual doped with 38 gm/l silicic acid and 7 gm/l AP yields a reasonably high (100) silicon etch rate of 70 μm/h at 80 °C, very small etch rates of SiO2 and pure aluminum (around 80 Å/h and 50 Å/h, respectively), and a smooth surface (±7 nm) at a bath temperature of 80 °C. The etchant has been successfully used for fabricating several MEMS structures like piezoresistive accelerometer, vaporizing liquid micro-thruster and flow sensor. In all cases, the bulk micromachining is carried out after the formation of aluminum interconnects which is found to remain unaffected during the prolonged etching process at 80 °C. The TMAH based etchant may be attractive in industry due to its compatibility with standard CMOS process."
}
@article{Jhou2006328,
title = "GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "328 - 331",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002296",
author = "Y.D. Jhou and C.H. Chen and S.J. Chang and Y.K. Su and P.C. Chang and P.C. Chen and H. Hung and C.L. Yu and S.M. Wang and M.H. Wu",
keywords = "GaN",
keywords = "MSM",
keywords = "Ni/Au",
keywords = "Photo-CVD",
keywords = "Schottky diode",
abstract = "Thin Ni/Au (3/6 nm) bi-layer metal films annealed by photo-chemical vapor deposition (photo-CVD) were investigated. With proper annealing in oxygen by the photo-CVD systems, it was found that the transmittance of the deposited Ni/Au increased from 67 to 85% in the region between 350 and 450 nm. GaN metal–semiconductor–metal (MSM) ultraviolet (UV) photodetectors with photo-CVD annealed Ni/Au contact electrodes were also fabricated. It was found that dark current of the detector became significantly smaller after annealing. With a 1 V applied bias, it was found that we can achieve a photocurrent to dark current contrast ratio of 2.54×103 from the photodetectors with 600 °C photo-CVD annealed Ni/Au contacts."
}
@article{Sun2006332,
title = "Feasible approach to the fabrication of asymmetric Schottky barrier MOSFETs by using the spacer technique",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "332 - 335",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002284",
author = "L. Sun and D.Y. Li and X.Y. Liu and R.Q. Han",
keywords = "Schottky barrier MOSFETs",
keywords = "Silicide",
keywords = "Asymmetric source/drain",
keywords = "Ultra thin body",
keywords = "Spacer technique",
abstract = "The spacer technique is proposed for the fabrication of the Asymmetric Schottky Barrier MOSFETs (ASB-MOSFET). The characteristics of the 45 nm and the 20 nm n-channel ASB-MOSFETs, which adopt a Schottky barrier height of 0.9 eV at source and that of 0.2 eV at drain, have been simulated and discussed by the comparisons with the conventional Schottky Barrier MOSFETs (SB-MOSFET). With a higher Ion/Ioff ratio, the ASB-MOSFET structure has shown a better performance than the conventional SB-MOSFETs."
}
@article{Touzi2006336,
title = "Realisation of ‘Solar Blind’ AlGaN Photodetectors: Measured and calculated spectral response",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "336 - 339",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.058",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002016",
author = "C. Touzi and F. Omnès and T. Boufaden and P. Gibart and B. El Jani",
keywords = "AlGaN",
keywords = "High Al content",
keywords = "Photoluminescence",
keywords = "Solar blind photoconductors",
keywords = "Spectral response",
abstract = "AlxGa1−xN solar blind photoconductors are fabricated and characterized. The cutoff wavelength of these detectors is as low as 275 and 271 nm with aluminium fraction of 49.6 and 54.1%, respectively. The used AlGaN active layers were grown on (0001) sapphire substrates by low pressure metalorganic chemical vapour deposition (LP-MOCVD). The full width at half maximum (FWHM) of X-ray rocking curve from (0002) diffraction indicates the good quality of these samples. Optical properties are investigated with photoluminescence and absorption measurements. The variation of the spectral response with applied voltage and modulation frequency is investigated. Better results are obtained with 12 Hz and 20 V. Compared to other researches, a high rejection ratio is obtained. The simulation of the photoresponse using the voltage dependent responsivity allows the determination of the carrier lifetime. We obtained a value of 0.15 and 0.13 ms for x=0.49 and 0.54, respectively."
}
@article{Tomasz2006340,
title = "Simultaneous estimation of heat transfer coefficient and thermal conductivity with application to microelectronic materials",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "340 - 352",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.052",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002004",
author = "Tomasz and Zawada",
keywords = "Parameter estimation",
keywords = "Inverse problem",
keywords = "Heat source",
keywords = "Repeated least square algorithm",
keywords = "Thick film",
keywords = "Low temperature cofire ceramics",
abstract = "An estimation of unknown properties of materials arises naturally when one considers some aspects of thermal modeling, especially carried out by widely used numerical methods, e.g. Finite Element Method (FEM).
We propose a new approach of simultaneous thermal conductivity and heat transfer coefficient estimation based on thermographic measurements. A linear, steady-state distributed parameter model is used in order to describe the test sample. Thermal properties measurement is equivalent to the unknown parameter estimation of this system. The proposed method is practically applied for estimation of thermal conductivity and heat transfer coefficient of thick-film modules made on alumina (96% Al2O3) and DP951 ceramic substrates. In these experiments a high-resolution thermographic scanner is used.
The obtained results for thermal conductivity and heat transfer factor are fully comparable with previously published ones."
}
@article{Lala2006353,
title = "On self-healing digital system design",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "353 - 362",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.025",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002466",
author = "P.K. Lala and B. Kiran Kumar and J.P. Parkerson",
keywords = "Self-healing digital systems",
keywords = "Self-replication",
keywords = "Phylogenetic",
keywords = "Ontogenetic",
keywords = "Epigenetic",
abstract = "In recent years there has been a significant growth of interest in exploiting the principles of biological processes to create powerful methodologies for solving computational problems. This paper discusses how these features have been exploited in digital hardware design. It also introduces an architecture for implementing self-healing digital systems that is inspired by the antigen protection mechanism employed by the human immune system. In the proposed architecture, a spare cell is dedicated to replace one in a group of four functional cells. Once one of these four functional cells is found to be faulty, the spare cell is cloned as the faulty cell. This architecture is especially suitable for tolerating soft errors in functional cells or on interconnect lines. Another major advantage of this architecture is that the outputs of functional cells are connected to the inputs of other physically adjacent functional cells, thus making it appropriate for nanocomputing system design."
}
@article{Sghaier2006363,
title = "Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "363 - 370",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002351",
author = "N. Sghaier and M. Trabelsi and N. Yacoubi and J.M. Bluet and A. Souifi and G. Guillot and C. Gaquière and J.C. DeJaeger",
keywords = "AlGaN/GaN HEMT",
keywords = "Current instabilities",
keywords = "Defects",
keywords = "Conductance dispersion",
keywords = "Random telegraph signal",
abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al2O3 substrates reveals anomalies on Ids–Vds–T and Igs–Vgs–T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism responsible for current instabilities is proposed. Deep defects analysis performed by capacitance transient spectroscopy (C-DLTS), frequency dispersion of the output conductance (Gds(f)), respectively, on gate/source and drain/source contacts and RTS prove the presence of deep defects localized, respectively, in the gate and in the channel regions. Defects detected by C-DLTS and Gds(f) are strongly correlated, respectively, to barrier height inhomogeneities and kink anomalies. Gate current analysis confirms the presence of (G–R) centers acting like traps at the interface GaN/AlGaN. Finally, the localization of these traps defects is proposed."
}
@article{Quintero2006371,
title = "Circuit models for quasi-3D spice simulation of turn-on transients in four-layer power bipolar devices",
journal = "Microelectronics Journal",
volume = "37",
number = "4",
pages = "371 - 382",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.050",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002028",
author = "R. Quintero and A. Cerdeira",
keywords = "3D",
keywords = "2D",
keywords = "Simulation",
keywords = "Power device",
keywords = "Thyristor",
keywords = "Four-layer",
keywords = "TOVP",
keywords = "Plasma spreading",
abstract = "Improved transport models for quasi-3D circuit-based simulation (Q3DSim) of four-layer devices such as thyristors and transient over-voltage protectors (TOVPs) are presented. Q3DSim is an attractive alternative to full 3D transport equations based simulations (3D-TES), since it is much faster and requires less computer power. In Q3DSim, the thyristor is divided into four-layered square prisms, and a 1D PNP–NPN transistor pair model is associated to each of them in the anode to cathode direction. The PNP–NPN elements are interconnected through two transversal grid planes of circuit elements. The resulting equivalent circuit is simulated with Spice. Plasma-spreading velocity, used here as a benchmark, depends strongly on the current-dependent transport properties in the anode to cathode path given by the transistor gains, and on the transversal transport properties of both transistor bases.
The new circuital models reported here, based on the quasi-static approximation, add drift and diffusion current components to Q3DSim transversal base planes. The circuit version of the base model was implemented with finite differences in Spice. The PNP transistor of the PNP–NPN basic model was complemented with a second PNP transistor that simulates the transport enhancement in the N-base due to the ohmic effect. All the required parameters are extracted from static TES. The power of the method was demonstrated by comparing 2D-TES plasma spreading velocity simulations with Q3DSim simulations. Both simulations were very close to each other in the 50–1200 A/cm2 anode current density range. Moreover, the Q3DSim current wave front shapes were very close to 2D-TESs in the same current density range, showing the validity of the presented models."
}
@article{Vitezslav2006189,
title = "The quest for optimum construction and technology of power semiconductor devices",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "189 - ",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003381",
author = "Vitezslav and Benda"
}
@article{Cappelluti2006190,
title = "Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "190 - 196",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.026",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003393",
author = "F. Cappelluti and F. Bonani and M. Furno and G. Ghione and R. Carta and L. Bellemo and C. Bocchiola and L. Merlin",
keywords = "Reverse recovery modeling",
keywords = "Recovery diodes",
keywords = "Platinum",
abstract = "The paper presents the results of the application of physics-based mixed-mode simulations to the analysis and optimization of the reverse recovery for Si-based fast recovery diodes (FREDs) using Platinum (Pt) lifetime killing. The trap model parameters are extracted from Deep Level Transient Spectroscopy (DLTS) characterization. The model is validated against experimental characterization carried out on the current International Rectifier (IR) FRED PiN technology. Improved designs, using emitter control efficiency and merged PiN–Schottky structures, are analyzed. Comparison between simulated and measured results are presented."
}
@article{Hazdra2006197,
title = "Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "197 - 203",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.010",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500340X",
author = "P. Hazdra and V. Komarnitskyy",
keywords = "Lifetime control",
keywords = "Silicon",
keywords = "Irradiation",
keywords = "Protons",
keywords = "Alphas",
keywords = "Power diodes",
abstract = "The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was used to suppress leakage of the silicon power diodes subjected to local lifetime control. The aim was to modify the profile of recombination centers and to reduce production of vacancy complexes. The high-energy proton irradiation was compared with standard local lifetime killing by high-energy alphas. Recombination centers arising from irradiation were characterized after irradiation and subsequent annealing at 220 and 350 °C by deep level transient spectroscopy and I–V profiling. Static and dynamic parameters of irradiated diodes were also measured and compared. Results show that the applied irradiation with protons provides 3–10 times lower leakage compared to standard alphas for equivalent reduction of the reverse recovery current maximum. On the other hand, the excessive formation of hydrogen donors at high proton fluences and their diffusion during annealing at 350° decreases diode blocking capability."
}
@article{Siemieniec2006204,
title = "Compensation and doping effects in heavily helium-radiated silicon for power device applications",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "204 - 212",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003411",
author = "R. Siemieniec and H.-J. Schulze and F.-J. Niedernostheide and W. Südkamp and J. Lutz",
keywords = "Lifetime control",
keywords = "Recombination centres",
keywords = "Compensation effects",
keywords = "Doping effects",
keywords = "Helium irradiation",
abstract = "The formation of defects modifying the effective doping concentration of helium-radiated p+–n−–n+ and p+–p−–n+ silicon diodes is analyzed as a function of the annealing temperature. After irradiation with helium at high energy levels and annealing at 220 °C, the probable formation of divacancy clusters increases the number of charged-acceptor states in a space-charge region. Capacitance-Voltage and Spreading-Resistance Profile measurements show that annealing at 350 °C results in the formation of an acceptor-like defect that deep level transient spectroscopy measurements suggest can be tentatively attributed to the V2O or V4/V5 centre. Annealing at 430 °C results in the disappearance of the acceptor-like defect. Instead, pronounced donor formation in a range close to the penetration depth of the helium ions is observed. The influence of these effects on device characteristics is discussed."
}
@article{M2006213,
title = "Fast soft recovery thyristors with axial lifetime profile fabricated using iridium diffusion",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "213 - 216",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003423",
author = "M. and Černík",
keywords = "Fast thyristors",
keywords = "Soft reverse recovery",
keywords = "Axial carrier lifetime control",
keywords = "Iridium diffusion",
abstract = "The paper presents experimental results on samples of fast soft reverse recovery thyristors with axial carrier lifetime gradient in the wide base, realised using combination of iridium diffusion with low dose of electron irradiation. Using this technique, fast thyristors of ITAV=960 A, VDRM=3 kV, turn-off time tq≈110 μs and reverse recovery charge Qrr≈700 μC, were fabricated. The softness factor tf/ts≈1 at −dIT/dt=50 A/μs. Devices can be used in e.g. frequency converters based on the current source inverter."
}
@article{Benda2006217,
title = "OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "217 - 222",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.027",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003435",
author = "V. Benda and M. Cernik and V. Papez",
keywords = "OCVD method",
keywords = "Carrier lifetime gradient",
keywords = "Power diode structures",
abstract = "The OCVD (open circuit voltage decay) method is the generally used method for the determining of carrier lifetime in the structures of semiconductor devices. This paper is focused on power diode (P+NN+) structures, in which is realised a carrier lifetime gradient to influence the current and voltage waveforms during the reverse recovery process. A theoretical analysis of the general features of voltage decay courses in OCVD measurements on diode structures with an axial carrier lifetime gradient in the diode base is presented. Some results obtained from both simulations and experimental measurements are discussed in the paper."
}
@article{Bourennane2006223,
title = "A vertical monolithical MOS thyristor bi-directional device",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "223 - 230",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003447",
author = "A. Bourennane and M. Breil and J.-L. Sanchez and J. Jalade",
keywords = "Vertical bidirectional power semiconductor device",
keywords = "Triac",
keywords = "Thyristor",
abstract = "In this paper, a vertical monolithical MOS thyristor bi-directional device having all the main power electrodes and the MOS control gate electrodes on one side of the wafer is proposed. Its operating modes are described and verified by qualitative two dimensional numerical simulations. This device has a vertical current conduction ability which enables it to conduct high currents and it can block high voltages. Moreover, the fact that all the main power electrodes and the MOS control gate electrodes are on the upper side of the silicon wafer allows to overcome the packaging constraints encountered in some of the proposed, in the state of the art, vertical bi-directional MOS controlled devices."
}
@article{Ji2006231,
title = "A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "231 - 235",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003459",
author = "In-Hwan Ji and Byung-Chul Jeon and Young-Hwan Choi and Yearn-Ik Choi and Min-Koo Han",
keywords = "EST",
keywords = "Shallow",
keywords = "Trench",
keywords = "p-base resistance",
keywords = "Floating n+emitter",
abstract = "A new emitter switched thyristor (EST) employing trench segmented p-base, which successfully improves the forward I–V and switching characteristics with decreasing the device active area, is proposed and verified experimentally with using shallow trench process of novel junction termination extension (JTE) method. The latching current of EST is determined by the p-base resistance of upper npn transistor. Floating n+emitter of conventional EST is enlarged to obtain large base resistance. However, the proposed EST increases the p-base resistance with shorter floating n+ emitter than that of conventional one. Shallow trench in floating emitter region forms the highly resistive p-base region under the bottom of trench. The experimental results show that the shortened floating n+ emitter and lowered latching current of proposed EST decrease experimentally the forward voltage drop by 17.7% and snap-back phenomenon with small active area. The breakdown voltage of series lateral MOSFET of proposed EST is increased from 7 to 14 V due to the trench filled with oxide which results in vertical redistribution of electric field, therefore current saturation capability and forward biased safe operating area (FBSOA) of proposed EST are enhanced. The simulation results show that the switching operation is performed successfully at the blocking voltage of 600 V and Eoff of the proposed one is reduced by 3.7%. The measured inductive load switching characteristics also shows that Eoff of proposed one is improved by 7.2%."
}
@article{Vobecký2006236,
title = "The properties of aluminum, platinum silicide and copper based contacts for silicon high-power devices",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "236 - 242",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003460",
author = "J. Vobecký and D. Kolesnikov",
keywords = "Power diode",
keywords = "Contact",
keywords = "Aluminum",
keywords = "Copper",
keywords = "Platinum silicide",
abstract = "Electrical, thermo-electrical and thermo-mechanical properties were compared for PtSi, aluminum (Al, PtSi–Al, PtSi–AlCuSi, PtSi–TiW–AlCuSi), and copper based contacts (TiW–Ni–Cu, TiW–Ni–Cu–Ni–Au, PtSi–TiW–Ni–Cu, PtSi–TiW–Ni–Cu–Ni–Au). High-power 2.5 kV/150 A P-i-N diode with both lapped and etched anode surface was used to characterize the performance of the contacts in the conditions of free floating silicon in pressed package. The devices with PtSi contacts have the lowest forward voltage drop, but do not survive the operation in pressed package under thermal cycling. The copper based contacts with PtSi layer give lower voltage drop and better thermo-mechanical ruggedness compared to that of aluminum. These features are conserved even with passivation against corrosion using Ni–Au. The contacts without the PtSi layer have high voltage drop and fail under thermal cycling. The composition of the contact layer is shown to influence the thermal behavior of device voltage drop. The crossing point current is found to decrease with increasing contact layer thickness. The lowest magnitude gives the aluminum contact."
}
@article{Knaipp2006243,
title = "Evolution of a CMOS Based Lateral High Voltage Technology Concept",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "243 - 248",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003472",
author = "M. Knaipp and J.M. Park and V. Vescoli",
keywords = "High Voltage ICs",
keywords = "Process integration",
keywords = "LDMOS",
keywords = "0.35 CMOS",
keywords = "Adaptive RESURF",
abstract = "This work describes the evolution of a CMOS based lateral high voltage (HV) technology concept, where the HV part is integrated in a low voltage (LV) CMOS technology. The starting point is an existing substrate related state of the art 0.35 μm LV CMOS technology (C35) which is optimized for digital and analog applications. The technology covers two different gate oxide thicknesses which allow to control two LV logic levels with different gate voltages and drain voltages (max.VGS=max.VDS=3.3V, max.VGS=max.VDS=5.5 V). The key requirement for the HV integration is to preserve the LV design rules (DR) and the LV transistor parameters. Only in this case it is possible to reuse the digital and analog intellectual property (IP) blocks. The major challenge of this integration is to overcome the relatively high surface concentration of the 0.35 μm CMOS process which defines the threshold voltages and the short channel effects. Because the HV devices use the same channel formation like the LV devices, a process concept for the drift region connection to the channel is the key point in this integration approach. A benchmark for the process complexity is given by the mask count (low volume production) and the number of alignments (high volume production). Starting from a very simple approach n-channel HV transistors are described which can be integrated in the substrate related LV CMOS concept without adding additional masks. During the next steps the LV CMOS process is modified continuously using additional masks and alignment steps. From each step to step the new HV properties are explained and the trade-off between process complexity and device performance is discussed."
}
@article{Caramel2006249,
title = "Integrated IGBT short-circuit protection structure: Design and optimization",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "249 - 256",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003484",
author = "C. Caramel and P. Austin and J.L. Sanchez and E. Imbernon and M. Breil",
keywords = "Short-circuit protection",
keywords = "anode voltage sensor",
keywords = "IGBT",
keywords = "functional integration",
abstract = "Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends on the flexible technological process developed for power structures and based on the functional integration concept [1]. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD."
}
@article{Bertrand2006257,
title = "Large area recrystallization of thick polysilicon films for low cost partial SOI power devices",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "257 - 261",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.029",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003496",
author = "I. Bertrand and J.M. Dilhac and P. Renaud and C. Ganibal",
keywords = "SOI",
keywords = "LEGO",
keywords = "Silicon recrystallization",
abstract = "This paper focuses on the process fabrication of a partial silicon-on-insulator (SOI) substrate for mixed power integration (low and high voltage devices on the same chip) at low cost. More specifically, such application would require a silicon substrate having localized thick SOI patterns associated with lateral isolation for control modules and bulk areas for power devices. The Lateral Epitaxial Growth over Oxide process (LEGO) based on fusion and recrystallization of polysilicon patterns, is a solution to obtain such a substrate at low cost and with a good SOI layer crystalline quality. A brief description of LEGO together with experimental results of LEGO process optimisation are presented."
}
@article{Ishiko2006262,
title = "Design concept for wire-bonding reliability improvement by optimizing position in power devices",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "262 - 268",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003502",
author = "Masayasu Ishiko and Masanori Usui and Takashi Ohuchi and Mikio Shirai",
keywords = "Wire bonding",
keywords = "Power module",
keywords = "Power semiconductor",
keywords = "Simulation",
keywords = "Reliability",
keywords = "Temperature distribution",
keywords = "Hybrid vehicle",
keywords = "Performance",
abstract = "The most effective way to increase the reliability of wire bonds in IGBT modules is reduction of temperature difference between the aluminum wires and the device. However, this lowers the power handling capability of the modules. In this paper, we show that the configuration of aluminum wire bonds on power devices has a considerable effect on the temperature distribution of the device, and that the optimization of the layout by thermo-electric simulation can make the temperature distribution of the devices more uniform and consequently reduce the maximum junction temperature difference, ΔTjmax. Tentative experiments showed that rearranging the bonding position resulted in reduction of ΔTjmax by five to 8 °C, and that the chip temperature distribution estimated by the thermo-electric simulation was qualitatively similar to the actual measurement results. These results suggest that wire-bonding optimization by thermo-electric simulation can contribute not only to realizing more compact power modules but also to improving the module reliability."
}
@article{Kojecký2006269,
title = "Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices",
journal = "Microelectronics Journal",
volume = "37",
number = "3",
pages = "269 - 274",
year = "2006",
note = "7th International Seminar on Power Semiconductor 7th International Seminar on Power Semiconductor",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.09.030",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003514",
author = "B. Kojecký and V. Papež and D. Šámal",
keywords = "Silicon power diode",
keywords = "Reverse characteristics",
keywords = "Thermal instability",
keywords = "Reliability",
abstract = "An investigation of the boundary states of power semiconductor devices is important with respect to their function reliability. Focus of this article is based on the evaluation of transient temperature increasing of pn-junction under its reverse bias. An influence of positive feedback (heating by some reverse current) is considered on time stability of this reverse current at constant reverse voltage. The temperature is determined which is limiting transiently the reliable function of devices. The problem is solved by two ways. First of them is based on a physical model design describing the heat generation and conduction in semiconductor structure. The second way uses electrical circuit simulation for study of the same structure. Conclusions of both models are applied to collection of experimental data."
}
@article{Zardas200691,
title = "Temperature dependence of Si–GaAs energy gap using photoconductivity spectra",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "91 - 93",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.056",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001990",
author = "G.E. Zardas and P.H. Yannakopoulos and M. Ziska and Chr. Symeonides and M. Vesely and P.C. Euthymiou",
keywords = "A. Semiconductors",
keywords = "D. Photoconductivity",
keywords = "D. Recombination and Trapping",
keywords = "E. Photoelectron spectroscopy",
abstract = "In the present work, we study the Energy gap (Eg) of the Si–GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the Eg and the temperature. We have measured the photocurrent as a function of photon energy from 1.36 up to 1.55 eV for each temperature. From the analysis of the spectra for each temperature we have found three peaks corresponding to inter-band transitions and we plotted the energy that corresponds to the peaks as a function of temperature."
}
@article{Zardalidis200694,
title = "Design and simulation of a nanoelectronic single-electron Control—Not gate",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "94 - 97",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.049",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001977",
author = "George T. Zardalidis and Ioannis Karafyllidis",
keywords = "Single-electron circuits",
keywords = "Nanoelectronics",
keywords = "Control—Not gate",
abstract = "A nanoelectronic single-electron Control–Not gate is presented in this paper. Bits of information are represented by the presence or absence of single electrons at conducting islands. The logic operation of the gate is verified using simulation, whereas the stability of its operation is analyzed using Monte-Carlo method."
}
@article{Kim200698,
title = "Modeling growth rate of HfO2 thin films grown by metal–organic molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "98 - 106",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.055",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001989",
author = "Myoung-Seok Kim and Young-Don Ko and Tae-Houng Moon and Jae-Min Myoung and Ilgu Yun",
keywords = "HfO2",
keywords = "Gate dielectric",
keywords = "Thin film",
keywords = "Process modeling",
keywords = "MOMBE",
abstract = "HfO2 dielectric layers were grown on the p-type Si (100) substrate by metal–organic molecular beam epitaxy (MOMBE). Hafnium-tetra-butoxide, Hf(O·t-C4H9)4 was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the HfO2 film and intermediate SiO2 layer were measured by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The properties of the HfO2 layers were evaluated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high frequency (HF) capacitance–voltage (C–V) measurement, and current–voltage (I–V) measurement. C–V and I–V measurements have shown that HfO2 layer grown by MOMBE has a high dielectric constant (k) of 20–22 and a low-level of leakage current density. The growth rate is affected by various process variables such as substrate temperature, bubbler temperature, Ar and O2 gas flows and growth time. Since the ratio of O2 and Ar gas flows are closely correlated, the effect of variations in O2/Ar flow ratio on growth rate is also investigated using statistical modeling methodology."
}
@article{Zhong2006107,
title = "Investigation of ultrasonic vibrations of wire-bonding capillaries",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "107 - 113",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.045",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001965",
author = "Z.W. Zhong and K.S. Goh",
keywords = "Microelectronics packaging",
keywords = "Wire bonding",
keywords = "Ultrasonic vibration",
keywords = "Capillary",
keywords = "Ultra-fine pitch",
abstract = "Ultrasonic energy is widely used in wire bonding for microelectronics packaging. It is necessary to ensure that the maximum ultrasonic vibration displacement occurs at or near the tip of the bonding tool (capillary) for optimal performance. In this study, amplitude profiles of ultrasonic vibrations along capillaries were measured with load using a laser interferometer. This provided valuable information in understanding and improving capillary performance. The method was applied to real time applications to optimize capillary designs and bonding processes for specific bonding applications. First, the application of a new capillary material with different zirconia compositions was evaluated. The new material with certain amount of zirconia composition showed that it was the capillary material of choice for ultra-fine pitch wire bonding. Next, comparative analysis was conducted to investigate the ultrasonic energy transfer of a new ‘slimline’ bottleneck and the conventional bottleneck. The actual bonding response of the molded slimline bottleneck showed comparable performance with the ground conventional bottleneck using the same bonding parameters. Finally, optimization of a 60-μm-bond-pad-pitch process was performed on a wire bonder. Within the optimized parameter ranges, the ultrasonic displacement of the capillary was monitored. For all possible combinations of bond force and bond power, the ultrasonic displacement of the capillary increased with increasing bond power, without drastic changes caused by bond force changes. This indicated that the selected process window was located in a stable region."
}
@article{Vexler2006114,
title = "Tunnel charge transport within silicon in reversely-biased MOS tunnel structures",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "114 - 120",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.048",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001953",
author = "M.I. Vexler and A. El Hdiy and D. Grgec and S.E. Tyaginov and R. Khlil and B. Meinerzhagen and A.F. Shulekin and I.V. Grekhov",
abstract = "The features of the electrical behaviour of a MOS tunnel structure, which arise from the tunnel carrier transport in semiconductor, are considered. For the explicitely given band diagram, the total current increases due to the contribution of electrons in energy range where the only-oxide tunneling is impossible. The resonance transport via the discrete levels in the quantum well may introduce steps in the reverse current–voltage characteristic. The band-to-band tunneling, which is to be treated as semiconductor tunneling, perturbates the balance of minority carriers in the inversion layer, modifying the charge state of a MOS structure. The stationary non-equilibrium support of a large surface carrier concentration becomes therefore possible, and the voltage partitioning in the MOS structure is distorted."
}
@article{Fan2006121,
title = "NIL—a low-cost and high-throughput MEMS fabrication method compatible with IC manufacturing technology",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "121 - 126",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.047",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001941",
author = "Xiqiu Fan and Honghai Zhang and Sheng Liu and Xiaofeng Hu and Ke Jia",
keywords = "Nanoimprint lithography (NIL)",
keywords = "Alignment",
keywords = "Technological compatibility",
keywords = "MEMS",
abstract = "Current MEMS fabrication technology cannot satisfy the simultaneous needs of 3D structure fabrication and compatibility with IC manufacturing technology, which have impeded the development of MEMS industrialization to a certain extent. Nanoimprint lithography (NIL) provides a new MEMS fabrication method that is compatible with IC manufacturing technology and bears high throughput and low cost. This paper presents an in-house prototype NIL tool with a high precision automatic alignment system based on moiré fringe signals. Some printing results of nanostructures or micro-devices using the prototype are presented, and hot embossing lithography, one typical NIL technology is depicted in detail by taking microlens array fabrication as an example. High fidelity and fine uniformity demonstrate NIL will be a new method to fabricate 3D structures of MEMS."
}
@article{IdrissiBenzohra2006127,
title = "Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "127 - 132",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.053",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500193X",
author = "M. Idrissi-Benzohra and M. Abdelaoui and M. Benzohra",
keywords = "Magnetic field",
keywords = "P+N junction",
keywords = "Short base",
keywords = "Long base",
keywords = "Silicon",
keywords = "Hole diffusion",
abstract = "The influence of a weak magnetic field on the electric current across silicon P+N junctions has been studied. The theoretical analysis considers two types of diodes: diodes with short base and diodes with long base and the magnetic field is assumed to be perpendicular to the direction of the electric current across the junction. The results show that the variation of the current is directly related to the variation of the hole diffusion coefficient, which is then calculated in the approximation of a P-type silicon material. The relative variation of the diffusion coefficient was found B2 dependent. Experimental investigations have then been carried out in order to validate the theoretical calculations. The experimental results were in good agreement with the theoretical development when taking into account the two types of holes in the diffusion mechanism in silicon."
}
@article{Torbiéro2006133,
title = "Mass patterning of polysiloxane layers using spin coating and photolithography techniques",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "133 - 136",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.054",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001928",
author = "B. Torbiéro and M.L. Pourciel-Gouzy and I. Humenyuk and J.B. Doucet and A. Martinez and P. Temple-Boyer",
keywords = "Polysiloxane copolymer",
keywords = "Spin coating",
keywords = "Photolithography",
abstract = "Polysiloxane (PSX) containing 2,2-dimethoxy-2-phenylacetophenone (DMPA) photoinitiator has been used as a photosensitive polymer. Thus, thin PSX films have been deposited by spin coating and patterned thanks to standard ultraviolet (UV) photolithography. The influences of the different technological parameters (PSX dilution, spin speed, UV exposure time) have been studied in so as to understand the polysiloxane deposition and cross-linking phenomena. Finally, the whole process has been optimised. Results evidence the realisation of high quality PSX patterns for the development of mass-fabricated ion sensitive layers in the field of chemical microsensors."
}
@article{Pavanello2006137,
title = "Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "137 - 144",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.046",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001916",
author = "Marcelo Antonio Pavanello and Paula Ghedini Der Agopian and João Antonio Martino and Denis Flandre",
keywords = "Silicon-on-insulator",
keywords = "Channel engineering",
keywords = "Graded-channel",
keywords = "Analog circuits",
keywords = "Low temperature",
abstract = "We present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100–300 K. This analysis is supported by a comparison between the results obtained by two-dimensional numerical simulations and measurements in the whole temperature range under study. The Graded-Channel transistor presents higher Early voltage if compared to the conventional fully depleted SOI nMOSFET, without degrading the transconductance over drain current, at all studied temperatures, leading to a gain larger than 20 dB compared to the conventional SOI. The resulting higher gain lies in the improvement of the electric field distribution and impact ionization rate by the graded-channel structure."
}
@article{Castellazzi2006145,
title = "Thermal characterisation of power devices during transient operation",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "145 - 151",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.123",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001321",
author = "Alberto Castellazzi and Martin Honsberg-Riedl and Gerhard Wachutka",
keywords = "Infrared thermal measurements",
keywords = "Thermal characterisation",
keywords = "Power devices",
keywords = "Reliability",
abstract = "An experimental infrared method for the thermal characterisation of semiconductor devices during fast transient operation, in the range from a few microseconds and up to some milliseconds, is presented. The features which make it suitable and convenient, particularly for use with power electronics applications are pointed out; its time and space resolution are illustrated by means of properly chosen examples. The considered solution qualifies as a very versatile and powerful tool in many diverse lines of investigation."
}
@article{Mologni2006152,
title = "Numerical study on performance of pyramidal and conical isotropic etched single emitters",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "152 - 157",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001357",
author = "J.F. Mologni and M.A.R. Alves and E.S. Braga",
keywords = "Field emitter",
keywords = "Simulation",
keywords = "Finite element method",
abstract = "A full three-dimensional model was implemented in order to investigate the electrical characteristics of conical and pyramidal isotropic etched emitters. The analysis was performed using the finite element method (FEM). The simulations of both emitters were modeled using a combination of tetrahedral and hexahedral elements that are capable of creating a mapped and regular mesh in the vacuum region and an irregular mesh near the surfaces of the emitter. The electric field strengths and electric potentials are computed and can be used to estimate the field enhancement factor as well as the current density using the Fowler–Nordheim (FN) theory. The FEM provides results at nodes located at discrete coordinates in space; therefore, the surface of the emitter can be generated through a function interpolating a set of scattered data points. The emission current is calculated through integration of the current density over the emitter tip surface. The influences of the device geometrical structure on its potential distribution, electric field and emission characteristics are discussed."
}
@article{Rebey2006158,
title = "In depth study of the compensation in annealed heavily carbon doped GaAs",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "158 - 166",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.127",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001333",
author = "A. Rebey and W. Fathallah and B. El Jani",
keywords = "C-doped GaAs",
keywords = "Compensation",
keywords = "MOVPE",
abstract = "Heavily C-doped GaAs epitaxial layers with holes concentrations ranging from 1019 to 1.6×1020 cm−3 have been grown by metal organic vapour phase epitaxy (MOVPE) using CCl4 as C-growth precursor. The carbon doping characteristics of GaAs epilayers have been investigated by optimizing the V/III ratio and the growth temperature. Additional informations have been extracted from the evolution of the in situ reflectivity signal during the growth of GaAs:C. The appearance of discernible oscillations in the reflectivity response indicates the high carbon incorporation and the good surface quality in spite of the CCl4 etching effect. The hole concentration tends to saturate at about 1.5×1020 cm−3. The comparison between Hall effect measurements realized on sets of as grown and annealed layers, and theoretical calculations of the mobility lead to the determination of the compensation ratio of the samples.
The lattice matching conditions were systematically investigated by using high X-ray diffraction measurements from (004) and (115) planes. A comparison between the experimental mismatch and the one calculated with the Vegard's law allows the estimation of the possible origin of the compensation. Secondary ion mass spectrometry, scanning electron microscopy and atomic force microscopy have been used as complementary tools to characterize the films."
}
@article{Bae2006167,
title = "Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "167 - 173",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.126",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001345",
author = "Seong-Chan Bae and Sie-Young Choi",
keywords = "Field emission",
keywords = "Porous polysilicon",
keywords = "Pt/Ti",
keywords = "Anneal",
abstract = "The field emission characteristics of an oxidized porous polysilicon were investigated with different annealing temperatures. Pt/Ti, Ir, and Au/NiCr were used as surface emitter electrodes, and Pt/Ti emitter showed highly efficient and stable electron emission characteristic compared with the conventional Au/NiCr electrode. Thin Ti layer played an important role in promotion of adhesion of Pt to SiO2 surface and uniform distribution of electric field on the OPPS surface. Additionally, the Ti layer efficiently blocked the diffusion of emitter metal, which resulted in more reliable emission characteristics. Pt/Ti emitter annealed at 350 °C/1 h showed the highest efficiency of 3.36% at Vps=16 V, which resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous polysilicon. Annealing above 400 °C showed that Pt/Ti and Ir emitter electrode were thermally more stable than Au/NiCr emitter."
}
@article{Kalisz2006174,
title = "Metastability tests of flip–flops in programmable digital circuits",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "174 - 180",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.042",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001898",
author = "J. Kalisz and Z. Jachna",
keywords = "Metastability",
keywords = "Metastability test",
keywords = "Mean time between failures",
keywords = "Programmable digital circuits",
keywords = "Flip–flop",
abstract = "This paper describes the methods and experimental techniques for determination of the metastability behavior of the flip–flops used in the programmable digital circuits. A dual model of the metastability distinguishes two transitions at the flip–flop output (L/H and H/L) which have different impact on the Mean Time Between Failures (MTBF) of the flip–flop. A new circuit of the late transition detector (LTD) allows for determination of the pairs of the metastability parameters, the window W and the time constant τ, for both transitions. The test results are presented for four types of programmable digital circuits fabricated commercially in CMOS technology. In the all tests, the H/L transition clearly dominates with respect to MTBF (as a worse one). The presented test methods can also be used for evaluation of flip–flops in nonprogrammable digital circuits."
}
@article{Kebbati2006181,
title = "A new semi-flat architecture for high speed and reduced area CORDIC chip",
journal = "Microelectronics Journal",
volume = "37",
number = "2",
pages = "181 - 187",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.043",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001904",
author = "H.S. Kebbati and J.Ph. Blonde and F. Braun",
keywords = "CORDIC",
keywords = "Trigonometric functions",
keywords = "Parallelization",
keywords = "Pipelining",
keywords = "Flat CORDIC",
abstract = "In this contribution we present a new CORDIC architecture called ‘semi-flat’ which reduces considerably the latency time and the amount of hardware. In our semi-flat architecture the first rotations are executed with an unfolded scheme but the remaining iterations are flattened using a fast redundant addition tree. Detailed comparisons with other major contributions show that our semi-flat redundant CORDIC is 30% faster and occupy 39% less silicon area."
}
@article{Souissi20061,
title = "Photoluminescence of V-doped GaN thin films grown by MOVPE technique",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "1 - 4",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002715",
author = "M. Souissi and Z. Chine and A. Bchetnia and H. Touati and B. El Jani",
keywords = "Photoluminescence",
keywords = "Metalorganic vapour phase epitaxy",
keywords = "GaN",
keywords = "Vanadium",
abstract = "This work reports the photoluminescence (PL) study of vanadium-doped GaN (GaN: V) in the 9–300 K range. Samples have been successfully prepared on sapphire substrates by metalorganic vapour phase epitaxy technique (MOVPE). At room temperature (RT) the PL spectra of GaN: V are dominated by a blue band (BB) in the 2.6 eV range. This BB emission is very strong and its intensity increases with increasing V doping level. We also observed that the peak position of the blue luminescence shifted at lower energy with decreasing excitation density. Upon V-doping, the yellow luminescence band shows a drastic reduction in integrated intensity. This observation is explained by a reaction involving V and gallium vacancy (√Ga). PL spectra at low temperature exhibited a series of peaks. The donor-acceptor (D-A) pair emission peak at 3.27 eV was strongly pronounced, as the temperature was decreased. On the other hand, the intensity of the BB emission decreased. This BB emission is due to a radiative transition from a shallow donor with a depth of 29 meV to a deep acceptor with a depth of 832 meV."
}
@article{Luo20065,
title = "Reinforcement of a PDMS master using an oxide-coated silicon plate",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "5 - 11",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002533",
author = "Cheng Luo and Fang Meng and Xinchuan Liu and Yiyun Guo",
keywords = "PDMS master",
keywords = "Pattern transfer",
keywords = "Residual and deflecting deformations",
keywords = "Reinforcement",
abstract = "In this work, a new method was developed to increase the stiffness of Polydimethylsiloxane (PDMS) masters using oxide-coated silicon plates, aimed at reducing the residual and deflecting deformations of the PDMS masters for proper pattern transfer. Using this method, these two types of deformations in the reinforced PDMS master have been reduced."
}
@article{RodríguezCoppola200612,
title = "Optical properties of (001) GaN/AlN quantum wells",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "12 - 18",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002703",
author = "H. Rodríguez-Coppola and J. Tutor and V.R. Velasco",
keywords = "Interfaces",
keywords = "Quantum wells",
abstract = "The absorption coefficient and the photoluminescence of (001) GaN/AlN quantum wells are calculated for several values of the well width, with and without the excitonic effect corrections, in the usual monoelectronic approach and as a many-body problem. The calculation was performed considering separate isolated bands for electrons, heavy and light holes. The monoelectronic approach to the optical properties was performed by assuming infinite well walls and finite well walls, respectively. The calculation including the excitonic effect as a many-body problem was performed within a recent approach designed for low-dimensional systems. The different wells studied here present many localized states and a complicated absorption spectrum. The monoelectronic approach in the infinite quantum well approximation reproduces quite well the spectrum of the wide wells due to the fact that the ground states of electrons and holes are well fixed by this model of quantum well."
}
@article{Maksimov200619,
title = "Luminescent properties of BexCd1−xSe thin films",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "19 - 21",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002557",
author = "O. Maksimov and Martin Muñoz and M.C. Tamargo",
keywords = "II–VI ternary alloy",
keywords = "Photoluminescence",
keywords = "CdSe",
keywords = "BeSe",
abstract = "We report photoluminescence (PL) study of BexCd1−xSe epitaxial layers (x<0.21) grown by molecular beam epitaxy on InP substrates. Continuous wave PL spectra are taken within a 4.2–300 K temperature range. We observe an anomalous ‘s-shaped’ temperature dependence of emission energy and a severe decrease of emission intensity with the increase of temperature. We explain an ‘s-shaped’ temperature dependence of emission energy by exciton localization in the potential minima at low temperatures followed by thermal activation at higher temperatures. We attribute low emission intensity at high temperatures to exciton dissociation and electron/hole migration to non-radiative recombination centers."
}
@article{Kal200622,
title = "CMOS compatible bulk micromachined silicon piezoresistive accelerometer with low off-axis sensitivity",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "22 - 30",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002697",
author = "S. Kal and S. Das and D.K. Maurya and K. Biswas and A. Ravi Sankar and S.K. Lahiri",
keywords = "CMOS",
keywords = "Silicon piezoresistive accelerometer",
keywords = "MemMech solver",
abstract = "The CMOS compatible bulk micromachined piezoresistive accelerometer presented in this paper consists of four flexures supporting a proof mass. Four pairs of boron-diffused piezoresistors are located at maximum stress points on the flexures near the proof mass and frame ends. Because of the opposite nature of stress at the two ends, these piezoresistors can be connected to form a Wheatstone bridge such that the off-axis responses are practically cancelled while the on-axis (along perpendicular to proof mass) response is maximized. The device is simulated using CoventorWare. In the fabrication process, dual-doped TMAH solution is used for wet anisotropic etching. The novelty of this etching process is that the bulk micromachining can be performed after aluminum metallization. The etched surface is also smooth. The fabrication is thus CMOS compatible. The accelerometer exhibits good linearity over 0–10 g."
}
@article{Gimenez200631,
title = "Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "31 - 37",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002570",
author = "Salvador Pinillos Gimenez and Marcelo Antonio Pavanello and João Antonio Martino and Denis Flandre",
keywords = "Analog circuits",
keywords = "Silicon on insulator technology",
keywords = "Graded-channel SOI nMOSFET",
keywords = "Operational transconductance amplifier",
keywords = "OTA",
abstract = "This paper studies the performance of operational transconductance amplifiers (OTAs) fabricated with Graded-Channel (GC) SOI nMOSFETs and designed to provide high open-loop voltage gain or high gain-bandwidth characteristics. Different design targets were taken in account such as similar power dissipation, transconductance over drain current ratio and die area. Comparisons with OTAs made with conventional SOI nMOSFETs, are performed showing that the GC OTAs presents larger open-loop voltage gain without degrading the phase margin, unit gain frequency and slew rate simultaneously with a significant required die area reduction depending on LLD/L ratio used. Circuit simulations and experimental results are used to qualify the analysis."
}
@article{Tian200638,
title = "Analysis of DC characteristics of GaAs double heterojunction bipolar transistors (DHBTs) with a pseudomorphic GaAsSb base",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "38 - 43",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002569",
author = "Yuan Tian and Hong Wang",
keywords = "GaAsSb/GaAs HBTs",
keywords = "Pseudomorphic",
keywords = "Compressive strain",
keywords = "Current mechanisms",
keywords = "Current gain",
abstract = "In this paper, DC characteristics in GaAs DHBTs with pseudomorphic GaAsSb base layer are investigated using an analytical approach. Devices using different GaAs1−xSbx base thickness with different Sb compositions were simulated to gain an in-depth understanding on the effect of base layer design on the device DC performance. Our calculated results show that, in the GaAsSb base with high Sb composition, the strain plays a non-negligible role in determining the overall device performance. The reduction of B–E turn-on voltage using a large Sb composition of GaAs1−xSbx could be partially compensated by strain in the base. Furthermore, for the devices using high Sb composition, a thin base layer has to be used to ensure elastic strain. In order to maintain reasonable base conductivity that is critical for device microwave performance, high base doping is required. However, our simulation reveals a drastic reduction of DC gain with the increase in base doping, while a high emitter doping may be helpful for the compensation of the degradation of β. A proper design of the device structure by taking the aforementioned issues into account is important for improving device DC and microwave performance."
}
@article{Zhong200644,
title = "High quality silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at low temperature",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "44 - 49",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002582",
author = "Chuan Jie Zhong and Hiroaki Tanaka and Shigetoshi Sugawa and Tadahiro Ohmi",
keywords = "Plasma enhanced chemical vapor deposition",
keywords = "Silicon nitride",
keywords = "Refractive index",
keywords = "C–V characteristics",
keywords = "J–V characteristics",
abstract = "The high-quality PECVD silicon nitride has been deposited by high-density and low-ion-energy plasma at 400 °C and the effect of the process parameters, such as silane and nitrogen flow rate, pressure, on its structure and electrical properties has been investigated. The experimental results show that silane flow rate is the most sensitive parameter for determining deposition rate and N/Si atomic ratio of silicon nitride in the range of process parameters employed. The change of nitrogen flow rate leaded to slightly change in deposition rate, however, it effects significantly on the refractive index or densification of silicon nitride. With the addition of hydrogen gas in plasma, the hysteresis of C–V characteristics of MIS structure decreases from 0.4 to 0.1 V. The moderate increment of ion energy makes further reduction in the hysteresis of C–V characteristics of MIS from 0.1 V to below 0.05 V. The interface trap density of 6.2×1010 (ev−1 cm-2), deduced from the high frequency and quasistatic C–V characteristics of the MIS structure, is about the same as that of LPECVD silicon nitride deposited at the range of 750–850 °C. The stoichiometric silicon nitride of excellence electric and structural properties is obtained by Ar/N2/H2/SiH4 high-density and low ion energy plasma."
}
@article{Wang200650,
title = "Diaphragm design guidelines and an optical pressure sensor based on MEMS technique",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "50 - 56",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002521",
author = "Xiaodong Wang and Baoqing Li and Onofrio L. Russo and Harry T. Roman and Ken K. Chin and Kenneth R. Farmer",
keywords = "Diaphragm design",
keywords = "Pressure sensor",
keywords = "Fabry–Perot",
keywords = "MEMS",
abstract = "The design guidelines for micro diaphragm-type pressure sensors have been established by characterization of the relationships among diaphragm thickness, side length, sensitivity, and resonant frequency. According to the study, the thickness need to be thin and the side length need to be small in order to get the sensitive diaphragm with high resonant frequency. A Fabry–Perot based pressure sensor has been designed based on the guidelines, fabricated and characterized. In principle, the sensor is made according to Fabry–Perot interference, which is placed on a micro-machined rectangular silicon membrane as a pressure-sensitive element. A fiber-optic readout scheme has been used to monitor sensor membrane deflection. The experimental results show that the sensor has a very high sensitivity of 28.6 mV/Pa, resolution of 2.8 Pa, and up to 91 kHz dynamic response."
}
@article{Rostami200657,
title = "Two-dimensional optical mask design and atom lithography",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "57 - 63",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002545",
author = "A. Rostami and A. Rahmani",
keywords = "Atom lithography",
keywords = "Gradient force",
keywords = "One-dimensional atomic lens",
keywords = "Two-dimensional optical mask",
keywords = "Nano-technology",
abstract = "Atom lithography is one of the latest proposals for high-resolution printing. The mask design and generation is key step for implementation of this method. In this paper, we have theoretically investigated and proposed a new method for two-dimensional optical mask design in atom lithography. A new method for realization of our proposed technique based on guided modes will present. With our proposed idea one can easily print every kind of two-dimensional patterns. This method can lead us to produce the nano-scale electronic and optical devices and systems. Also, a suitable algorithm for mask generation is proposed."
}
@article{Szekeres200664,
title = "Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "64 - 70",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002685",
author = "A. Szekeres and T. Nikolova and S. Simeonov and A. Gushterov and F. Hamelmann and U. Heinzmann",
keywords = "Plasma-assisted CVD",
keywords = "Silicon oxynitride",
keywords = "IR spectroscopy",
keywords = "Specral ellipsometry",
keywords = "Electrical properties",
abstract = "Silicon oxynitride films have been deposited on Si substrates at 200 °C by a remote-plasma-assisted process in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as gas ambient. During deposition the Si substrates were biased with negative voltages of −120 and −600 V or were under no DC bias and the influence of this voltage on the film properties has been considered. Film parameters, such as density, chemical bonds, refractive index, composition, oxide and interface charge densities of the deposited dielectric films have been estimated by analysis of the results from the infrared (IR) spectroscopy, spectral ellipsometry (SE) and capacitance–voltage (C–V) measurements. The IR and SE results have proven the films are oxynitrides of silicon with predominantly oxide network. The analysis of the capacitance–voltage characteristics has shown that the dielectric charge densities increase with increasing DC bias but they remain considerably low in comparison to that for a standard SiO2/Si structure before any annealing steps."
}
@article{Telli200671,
title = "CMOS planar spiral inductor modeling and low noise amplifier design",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "71 - 78",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002727",
author = "A. Telli and S. Demir and M. Askar",
keywords = "RFIC",
keywords = "CMOS",
keywords = "Low noise amplifier",
keywords = "Planar spiral inductors",
keywords = "Inductor modeling",
abstract = "During this study, various narrowband single-ended inductive source degenerated Low Noise Amplifiers (LNAs) for GSM and S-band low earth orbit (LEO) space applications have been designed, simulated and compared using Mietec CMOS 0.7 μm process and the Cadence/BSIM3v3. To get more realistic results, parasitic effects due to layout have been calculated and added to the simulations. Also, considering the inductive source degenerative topology, most of the attention is given on the modeling of planar spiral inductor by lumped element circuits. Moreover to decrease the substrate effects, the inductors have been surrounded by grounded guard rings and have patterned ground shield (PGS) under them. The simulation results of LNA including the parasitic effects indicate a forward gain of 9 dB with noise figure of 4.5 dB while drawing 18 mW from+3 V supply at 2210 MHz. The area occupied is 1.8 mm×1.6 mm with pads, 1.3 mm×1.2 mm without pads."
}
@article{Ashour200679,
title = "Electronic conductance in binomially tailored quantum wire",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "79 - 83",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002740",
author = "H.S. Ashour and A.I. Ass'ad and M.M. Shabat and M.S. Hamada",
keywords = "Mesoscopic systems",
keywords = "Quantum waveguide",
keywords = "Quantum wire.",
abstract = "We have studied the electronic transmission properties through binomially tailored waveguide quantum wires with Dirac delta function potentials. The potential's strength is weighted according to the binomial distribution law. We have assumed that single free-electron channel is incident on the structure and the scattering of electrons is solely from the geometric nature of the problem. We have used the transfer matrix method to study the electron transmission. We found that this structure pattern allows us to have well-defined allowed conduction bands due to transmission resonance. We also found that the electronic conductance spectrum depends on the number of the Dirac delta function potential in the quantum wire. When the number of Dirac delta function potentials in the structure and their strengths are increased, both well-defined conductance bands and sharper and narrower forbidden bands are formed."
}
@article{Jiang200684,
title = "Design of a tunable frequency CMOS fully differential fourth-order Chebyshev filter",
journal = "Microelectronics Journal",
volume = "37",
number = "1",
pages = "84 - 90",
year = "2006",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002739",
author = "Jinguang Jiang and Yaonan Wang",
keywords = "Continuous-time filters",
keywords = "Tunable frequency",
keywords = "Fully differential",
keywords = "Common-mode feedback",
keywords = "Chebyshev filter",
abstract = "A new fully differential amplifier and a fully differential R-MOSFET-C fourth-order Chebyshev active lowpass filter employing passive resistors and current-steering MOS transistors as variable resistors are proposed. The implementation relies on the tunability of current-steering MOS transistors operating in the triode region which counteract the deviation of resistors in integrated circuit manufacturing technology in order that the cutoff frequency of Chebyshev active filter can be realized accurately tunable. The amplifier is not only with voltage common-mode negative feedback (VCMFB), but also with current common-mode negative feedback (CCMFB), which will benefit for the stability of its DC operating point. A cutoff frequency of 138 kHz fourth-order Chebyshev lowpass filter was designed and fabricated using 3.3 V power supply and 0.35 μm CMOS technology. Chip test results demonstrate better than −68 dB THD with 70 kHz, 2.0Vpp signal, frequency turning range of more than 14,000 from 3 Hz to 420 kHz, chip area of 0.36 mm2 and power consumption of 16 mW."
}
@article{Kaminska20051063,
title = "Analog and mixed signal test techniques for SOC development",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1063 - ",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002399",
author = "Bozena Kaminska and Stephen Sunter and Salvador Mir"
}
@article{Mozuelos20051064,
title = "Test of a switched-capacitor ADC by a built-in charge sensor",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1064 - 1072",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.060",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002405",
author = "R. Mozuelos and Y. Lechuga and M. Martínez and S. Bracho",
keywords = "Analog to digital converter",
keywords = "Built-in testing",
keywords = "CMOS analog integrated circuits",
keywords = "Fault evaluation",
keywords = "Switched capacitor circuits",
abstract = "A test methodology for switched capacitor circuits is described. The test approach uses a built-in sensor to analyze the charge transfer inside the circuit under test (CUT). The test methodology is applied to a 10-bit algorithmic analog to digital converter to obtain the static linearity and to the simulated fault coverage figures taking into account a catastrophic fault model. The goodness of the charge sensor has been experimentally evaluated with an SC integrator for fault detection and built-in sensor influence on the CUT performance."
}
@article{Romero20051073,
title = "Test of switched-capacitor ladder filters using OBT",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1073 - 1079",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.061",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002417",
author = "Eduardo Romero and Gabriela Peretti and Gloria Huertas and Diego Vázquez",
keywords = "Mixed-signal design for test",
keywords = "Oscillation-based test",
abstract = "In this paper, a way to test switched-capacitors ladder filters by means of Oscillation-Based Test (OBT) methodology is proposed. Third-order low-pass Butterworth and Elliptic filters are considered in order to prove the feasibility of the proposed approach. A topology with a non-linear element in an additional feedback loop is employed for converting the Circuit Under Test (CUT) into an oscillator. The idea is inspired in some author's previous works (G. Huertas, D. Vázquez, A. Rueda, J.L. Huertas, Oscillation-based Test Experiments in Filters: a DTMF example, in: Proceedings of the International Mixed-Signal Testing Workshop (IMSTW'99), British Columbia, Canada, 1999, pp. 249–254; G. Huertas, D. Vazquez, E. Peralías, A. Rueda, J.L. Huertas, Oscillation-based test in oversampling A/D converters, Microelectronic Journal 33(10) (2002) 799–806; G. Huertas, D. Vázquez, E. Peralías, A. Rueda. J.L. Huertas, Oscillation-based test in bandpass oversampled A/D converters, in: Proceedings of the International Mixed-Signal Test Workshop, June 2002, Montreaux (Switzerland), pp. 39–48; G. Huertas, D. Vázquez, A. Rueda, J.L. Huertas, Practical oscillation-based test of integrated filters, IEEE Design and Test of Computers 19(6) (2002) 64–72; G. Huertas, D. Vázquez, E. Peralías, A. Rueda, J.L. Huertas, Testing mixed-signal cores: practical oscillation-based test in an analog macrocell, IEEE Design and Test of Computers 19(6) (2002) 73–82). Two methods are used, the describing function approach for the treatment of the non linearity and the root-locus method for analysing the circuit and predicting the oscillation frequency and the oscillation amplitude. In order to establish the accuracy of these predictions, the oscillators have been implemented in SWITCAP (K. Suyama, S.C. Fang, Users' Manual for SWITCAP2 Version 1.1, Columbia University, New York, 1992). Results of a catastrophic fault injection in switches and capacitors of the filter structure are reported. A specification-driven fault list for capacitors is also defined based on the sensitivity analysis. The ability of OBT for detecting this kind of faults is presented."
}
@article{Prenat20051080,
title = "A low-cost digital frequency testing approach for mixed-signal devices using ΣΔ modulation",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1080 - 1090",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.062",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002429",
author = "Guillaume Prenat and Salvador Mir and Diego Vázquez and Luís Rolíndez",
abstract = "This paper presents a digital approach to frequency testing of Analogue and mixed-signal (AMS) circuits. This approach is aimed at facilitating low-cost test techniques for system-on-chip (SoC) devices, rendering the test of mixed-signal cores compatible with the use of a low-cost digital tester. Analogue test signal generation is performed on-chip by low pass filtering a sigma–delta (ΣΔ) encoded bit-stream. Analogue harmonic test response analysis is also performed on-chip using square wave modulation and ΣΔ modulation. Since both analogue signal generation and test response analysis are digitally programmable on-chip, compatibility with a low-cost digital tester is ensured. Optimisation of test signatures is discussed in detail as a trade-off between fault and yield coverage. A 0.18 μm CMOS implementation of this BIST technique is presented, including some experimental results."
}
@article{Gopalan20051091,
title = "A current based self-test methodology for RF front-end circuits",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1091 - 1102",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.064",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002430",
author = "Anand Gopalan and Martin Margala and P.R. Mukund",
keywords = "RF BIST",
keywords = "RF testing",
keywords = "RF IC design",
keywords = "Mixed signal testing",
keywords = "Current based testing",
abstract = "This paper presents a critical step in the realization of a robust, low overhead, current-based Built-In Self-Test (BIST) scheme for RF front-end circuits. The proposed approach involves sampling the high frequency supply current drawn by the circuit under test (CUT) and using it to extract information about various performance metrics of the RF CUT. The technique has inherently high fault coverage and can handle soft faults, hard faults as well as concurrent faults because it shifts the emphasis from detecting individual faults, to quantifying all the significant performance specifications of the CUT. This work also presents the realization of an HF current monitor which is a critical component in the proposed architecture. The current monitor has then been interfaced with three standard RF front-end circuits; a Low noise amplifier, a Single Balanced Mixer and a Voltage controlled oscillator, while minimally impacting their performance. The extracted information has then been used to create a mapping between variations in CUT performance and the sensed current spectrum. The monitor circuit has been fabricated in the IBM 6 metal, RF CMOS process, with a gain of 24 db and bandwidth of 3.9 GHz."
}
@article{HansG20051103,
title = "The test search for true mixed-signal cores",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1103 - 1111",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.063",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002442",
author = "Hans G. and Kerkhoff",
keywords = "Mixed-signal testing",
keywords = "Testability transfer function",
keywords = "Debugging",
keywords = "Diagnosis",
keywords = "Data converter testing",
abstract = "The well-known method towards testing mixed-signal cores is functional testing and essentially measuring key parameters of the core. However, especially if performance requirements increase, and embedded cores are considered, functional testing becomes technically and economically less attractive. A more cost-effective approach could be accomplished by a combination of reduced functional tests and added structural tests. In addition, it will also improve the debugging options for cores. Basic problem remains the large computational effort for analogue structural testing. In this paper, we introduce the concept of Testability Transfer Function for both analogue as well as digital parts in a mixed-signal core. This opens new possibilities for efficient structural testing of embedded mixed-signal cores, thereby adding to the quality of tests and/or enhanced diagnostic capabilities."
}
@article{AndradeJr20051112,
title = "Built-in self-test of global interconnects of field programmable analog arrays",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "1112 - 1123",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002454",
author = "Antonio Andrade Jr. and Gustavo Vieira and Tiago R. Balen and Marcelo Lubaszewski and Florence Azaïs and Michel Renovell",
keywords = "FPAA",
keywords = "Global interconnection",
keywords = "Graph modeling",
keywords = "BIST",
keywords = "ORA",
keywords = "ABILBO",
abstract = "Strategies for the test of Field Programmable Analog Arrays (FPAAs) have been devised based on testing separately their main three components: configurable analog blocks, I/O pads and interconnection network. In this work, a scheme for testing the interconnection network, in particular the global wiring, is presented. As long as analog wiring is considered, catastrophic faults at the switches and wires are considered, as well as parametric capacitive or resistive defects in interconnects. Similarly to FPGAs, critical path search is based on a graph model, so that known algorithms are reused, yielding a minimum number of Test Configurations. Then, a near-zero area overhead BIST procedure is proposed, in which Analog Built-in Block Observers are implemented as oscillators and integrators, respectively, generating test stimuli and analyzing output responses, using internal configurable resources of the FPAA."
}
@article{tagkey2005XVI,
title = "Author Index - see attached for style",
journal = "Microelectronics Journal",
volume = "36",
number = "12",
pages = "XVI - XXI",
year = "2005",
note = "IMSTW 2004 International Mixed-Signals Testing Workshop",
issn = "0026-2692",
doi = "10.1016/S0026-2692(05)00333-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205003332",
key = "tagkey2005XVI"
}
@article{a2005939,
title = "Foreword",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "939 - ",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001370",
author = "a and b"
}
@article{Willander2005940,
title = "Solid and soft nanostructured materials: Fundamentals and applications",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "940 - 949",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001382",
author = "M. Willander and O. Nur and Yu E. Lozovik and S.M. Al-Hilli and Z. Chiragwandi and Q.-H. Hu and Q.X. Zhao and P. Klason",
keywords = "Nano-structures",
keywords = "Semiconductors",
keywords = "Soft materials",
keywords = "Trapping",
keywords = "Excitons",
abstract = "The scientific work worldwide on nanostructured materials is extensive as well as the work on the applications of nanostructured materials. We will review quasi two-, one- and zero-dimensional solid and soft materials and their applications. We will restrict ourselves to a few examples from partly fundamental aspects and partly from application aspects. We will start with trapping of excitons in semiconductor nanostructures. The subjects are: physical realizations, phase diagrams, traps, local density approximations, and mesoscopic condensates. From these fundamental questions in solid nanomaterials we will move to trapping of molecules in water using nanostructured electrodes. We will also discuss how to manipulate water (create vortices) by nanostructure materials.
The second part deals with nanorods (nano-wires). Particularly we will exemplify with ZnO nanorods. The reason for this is that ZnO has: a very strong excitons binding energy (60 meV) and strong photon–excitons coupling energy, a strong tendency to create nanostructures, and properties which make the material of interest for both optoelectronics and for medical applications. We start with the growth of crystalline ZnO nanorods on different substrates, both crystalline (silicon, silicon carbide, sapphire, etc) and amorphous substrates (silicon dioxide, plastic materials, etc) for temperatures from 50 °C up to 900 °C. The optical properties and crystalline properties of the nanorods will be analyzed. Applications from optoelectronics (lasers, LEDs, lamps, and detectors) are analyzed and also medical applications like photodynamic cancer therapy are taken up.
The third part deals with nano-particles in ZnO for sun screening. Skin cancer due to the exposure from the sun can be prevented by ZnO particles in a paste put on the exposed skin."
}
@article{Henini2005950,
title = "Advances in self-assembled semiconductor quantum dot lasers",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "950 - 956",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001394",
author = "M. Henini and M. Bugajski",
keywords = "Quantum wells",
keywords = "Quantum wires",
keywords = "Quantum dots",
keywords = "Lasers",
keywords = "Molecular beam epitaxy",
keywords = "Metalorganic vapour phase epitaxy",
abstract = "In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers."
}
@article{Helm2005957,
title = "Efficient silicon based light emitters",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "957 - 962",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001400",
author = "M. Helm and J.M. Sun and J. Potfajova and T. Dekorsy and B. Schmidt and W. Skorupa",
keywords = "Silicon light emitters",
keywords = "Ion implantation",
keywords = "Rare earth",
keywords = "Microcavity",
keywords = "Electroluminescence",
abstract = "Recent progress on electrically driven silicon based light emitters is reviewed, with emphasis on our work on light emitting pn diodes (LED) and MOS devices doped with rare-earth elements. The LEDs were fabricated by high-dose boron implantation, producing nanoscale modifications in the material. The electroluminescence (EL) efficiency increases with temperature, reaching 0.1% (wall plug efficiency) at room temperature for optimized conditions. Such devices were integrated into a microcavity. In the MOS devices, the oxide was implanted with various rare-earth elements, resulting in strong EL in the visible (Tb) and ultraviolet (Gd). External quantum efficiencies in excess of 10% are reported."
}
@article{Li2005963,
title = "Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "963 - 968",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001412",
author = "Shunfeng Li and J. Schörmann and A. Pawlis and D.J. As and K. Lischka",
keywords = "Bragg reflectors",
keywords = "Multi-quantum wells",
keywords = "Resonant cavity LEDs",
abstract = "In this contribution, we present results on the growth and characterization of c-InGaN/GaN MQWs and c-AlGaN/GaN DBRs, which may be used as building blocks of green (510 nm) resonant cavity light emitting diodes, which have a high potential as light sources for local area networks using plastic optical fibers. First, the impact of the indium and gallium flux on the growth of cubic-InGaN by plasma assisted molecular beam epitaxy has been studied. Indium is observed to incorporate into the c-GaInN films only when the gallium flux is reduced significantly below the value needed for stoichiometric c-GaN growth. A decrease of the surface roughness of the InGaN layers and an increase of their photoluminescence intensity per unit thickness at the transition from metal-flux limited to active nitrogen-limited growth is observed. High quality c-InGaN/GaN multi-quantum wells were grown with superlattice peaks clearly resolved in high resolution X-ray diffraction and a strong room temperature photoluminescence with a full width at half maximum of 240 meV. Cubic-AlGaN/GaN distributed Bragg reflectors with a maximum reflectivity of about 50% at 515 nm and a stop bandwidth of 33 nm have been realized. Enhanced 526 nm room temperature photoluminescence has been observed from a combined structure of a c-InGaN/GaN multi-quantum well and a c-AlGaN/GaN distributed Bragg reflector."
}
@article{Soukiassian2005969,
title = "Atomic scale engineering of nanostructures at silicon carbide surfaces",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "969 - 976",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.025",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001424",
author = "Patrick Soukiassian and Vincent Derycke and Fabrice Semond and Victor Yu. Aristov",
keywords = "Nanostructures",
keywords = "Silicon carbide surfaces",
keywords = "Scanning tunneling microscopy",
abstract = "The atomic scale ordering and properties of cubic silicon carbide surfaces are investigated by room and high-temperature scanning tunneling microscopy. In this review, we will focus on the Si-terminated β-SiC(100) surfaces only. Self-formation of Si atomic lines and dimer vacancy chains on the β-SiC(100) surface is taking place at the phase transition between the 3×2 (Si-rich) and c(4×2) surface reconstructions. Using a rigorous protocol in surface preparation, it is possible to build very long, very straight and defect free Si atomic lines, forming a very large superlattice of massively parallel lines. These self-organized atomic lines are driven by stress. They have unprecedented characteristics with the highest thermal stability ever achieved for nanostructures on a surface (900 °C) and the longest atomic lines ever built on a surface (micrometer scale long). Investigating their dynamics, we learn that their dismantling at high-temperature results from collective and individual mechanisms including one-by-one dimer removal. Overall, this is a model system especially suitable for nanophysics and nanotechnologies."
}
@article{Anjos2005977,
title = "Thermal-lens and photo-acoustic methods for the determination of SiC thermal properties",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "977 - 980",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001436",
author = "V. Anjos and M.J.V. Bell and E.A. de Vasconcelos and E.F. da Silva Jr. and A.A. Andrade and R.W.A. Franco and M.P.P. Castro and I.A. Esquef and R.T. Faria Jr.",
keywords = "Thermal lens",
keywords = "Photoacoustic",
keywords = "Thermal conductivity",
keywords = "Thermal diffusivity",
keywords = "Heat capacity",
keywords = "SiC",
abstract = "In this paper we report the use of photothermal techniques such as Thermal lens (TL) spectrometry, Photoacoustic and heat capacity, ρcp, to determine the thermo-optical parameters, such as thermal conductivity (K), thermal diffusivity (D), specific heat (cp) and the optical path dependence with temperature (ds/dT), of an undoped polycrystalline 3C-SiC. To our knowledge, this is the first time that Thermal lens technique is used for wide band-gap systems. Results obtained for the polycrystalline sample with TL technique indicates that ds/dT is negative at room temperature. Moreover, the obtained values of thermal diffusivity and thermal conductivity are in good agreement with that found in the literature, indicating that the phototermal techniques can be used to obtain the referred parameters in circumstances where other techniques cannot be used, for example, in harsh environments."
}
@article{Medeiros2005981,
title = "Photoelectric effects of nanostructured amorphous carbon films",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "981 - 984",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001448",
author = "M.S. Medeiros and R.D. Mansano and A.P. Mousinho",
keywords = "Nanopores",
keywords = "Nanoholes",
keywords = "Carbon films",
abstract = "In this work, the photoelectric properties of nanostructured amorphous hydrogenated carbon films was studied; these films are a variation of diamond-like carbon films. For this study, carbon films with different compositions were deposited and their electrical and optical proprieties were analyzed. These films were deposited by reactive magnetron sputtering using a pure graphite target and methane, nitrogen, carbon tetrafluorine and argon as processing gases. The amorphous carbon films are naturally nanostructured and show amount of optical proprieties as photoemission in the visible range and photoelectric effects. To enhance these effects in this work, the selective etching of the carbon films was promoted, and a nanopores and nanoholes was obtained. These defects show characteristics of potential gaps and modify the carbon films properties. Plasma etching performs the generation of the nanopores and nanoholes in the carbon films. The characteristics of these films were observed by photoluminescence analyze, optical absorbance, electro-optic analyzes. In this study, the development of the new structure for optical analyses of the nanoporous carbon films was necessary. For this, an auto-aligned test structure based in interdigital electrodes was developed."
}
@article{HernándezCalderón2005985,
title = "Fine tuning of the emission of ultra-thin quantum wells of CdSe and CdTe by modification of the growth temperature",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "985 - 988",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.022",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500145X",
author = "I. Hernández-Calderón and J.C. Salcedo-Reyes and A. Alfaro-Martínez and M. García-Rocha",
keywords = "Quantum wells",
keywords = "Ultra-thin quantum wells",
keywords = "II–VI semiconductors",
keywords = "CdSe",
keywords = "CdTe",
keywords = "Excitons",
keywords = "Photoluminescence",
keywords = "Atomic layer epitaxy",
abstract = "Ultra-thin quantum wells (UTQWs) of CdTe and CdSe should present a emission energy as a function of thickness, however, we have observed that depending on substrate temperature the peak energy is modified: the higher the growth temperature the larger the blue shift. Considering (i) a chemical interaction that produces the substitution of Cd atoms by Zn atoms at the QW-barrier interface, and, (ii) the large Bohr radius of the excitons in II–VI semiconductors, we argue that a few percent substitution of Cd atoms by Zn atoms is perceived as a change in average composition and not as a thickness fluctuation. Since the Cd substitution is a thermally activated process, a larger blue shift is expected at the higher temperatures. Therefore, the UTQWs can be described as made of Zn1−xCdxSe or Zn1−xCdxTe alloys with high Cd content, x∼1 at the lower substrate temperatures (Ts). Then, the proper selection of Ts can be advantageously employed for fine tuning of the excitonic emission in the energy region between that of UTQWs of the pure binary compound with thickness difference of 1 ML, making possible to cover continuously the visible spectral region with CdTe and CdSe UTQWs."
}
@article{deMenezes2005989,
title = "CdTe/CdS core shell quantum dots for photonic applications",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "989 - 991",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001461",
author = "F.D. de Menezes and A.G. Brasil Jr. and W.L. Moreira and L.C. Barbosa and C.L. Cesar and R. de C. Ferreira and P.M.A. de Farias and B.S. Santos",
keywords = "Quantum dots",
keywords = "CdTe",
keywords = "luminescence",
abstract = "In this work, we show a simple experimental procedure to obtain CdTe/CdS (diameter=3–7 nm) core shell nanocrystals in colloidal suspension. The nanocrystals were characterized by transmission electronic microscopy and powder X-ray diffraction analysis. The optical properties were determined by electronic absorption, excitation and emission spectroscopies and are discussed in terms of chemical changes that occur at the surface of the particles."
}
@article{deAzevedo2005992,
title = "Visible photoluminescence from Ge nanoclusters implanted in nanoporous aluminum oxide films",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "992 - 994",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.026",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001473",
author = "W.M. de Azevedo and E.F. da Silva Jr. and E.A. de Vasconcelos and H. Boudinov",
keywords = "Nanoporous aluminum oxide",
keywords = "Ge+ implantation",
keywords = "Ge nanocluster photoluminescence",
abstract = "Nanoporous aluminum oxide (Al2O3) films with uniform porous size of 45 nm prepared by the electrochemical process in inorganic acid medium were implanted at room temperature (RT) with 120 keV Ge+ ions with a fluence of 1.2×1016 cm−2. The nucleation and growths of Ge nanoparticles, were obtained by thermal annealing of the implanted samples at the temperature range of 200–600 °C. The size and distribution of the nanoparticles were characterized by photoluminescence (PL) measurements. The photoluminescence measurements as a function of the annealing temperature shows that at low annealing temperature (200 °C), the sample presents a low intensity and broad emission band centered at 5456 Å consistent with emission band characteristics of nanocluster of Ge with diameter in the range of 4–8 nm, as the annealing temperature increases to 400 °C the PL intensity increases by a factor of almost 20 and the emission band suffers a small red shift. The intensity increases can be related to the increase of the number of Ge nanocluster. At the annealing temperature of 600 °C, the emission band is considerably red shifted by almost 172 Å and the emission intensity decreases significantly, strongly suggesting that nanocrystalline Ge having a character of direct optical transitions exhibits the visible photoluminescence."
}
@article{Nodari2005995,
title = "Electrical aspects of photovoltaic devices based on bi-layer organic semiconducting materials",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "995 - 997",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001485",
author = "F.M. Nodari and M. Koehler and M.G.E. da Luz and L.S. Roman",
keywords = "Photovoltaic devices",
keywords = "Conjugated polymer",
keywords = "C60",
keywords = "Charge transfer",
abstract = "Here we have investigated the opto-electrical properties of bi-layer sandwich devices based on polymer/C60 hetero junctions. In this type of device the polymer acts as an electron donor to the second layers the C60 which plays the role of an electron acceptor."
}
@article{Soares2005998,
title = "Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "998 - 1001",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.027",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001497",
author = "J.S. Soares and H.W. Leite Alves",
keywords = "Surfaces",
keywords = "Total energy",
keywords = "Reconstructions",
keywords = "Silicon carbide",
abstract = "In this work, we have calculated ab initio the structural and electronic properties of both the C- and Si-terminated SiC (100) surfaces in the c(2×2) and (2×1) reconstruction patterns, respectively. Based on our results, we found that the Si-terminated surfaces is dominated by weak bonded Si-dimers, which is stabilized only at Si-rich conditions, leading to a (3×2) or more complex reconstruction patterns, as verified experimentally. Also, our results show that the C-terminated surfaces is characterized by strong triply-bonded C-dimers, in a c(2×2) reconstruction pattern, which consists of C2 pairs over Si bridge sites, which is consistent with the experimental results."
}
@article{Rodrigues20051002,
title = "Design of InGaN/AlInGaN superlattices for white-light device applications",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1002 - 1005",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001503",
author = "S.C.P. Rodrigues and M.N. d'Eurydice and G.M. Sipahi and E.F. da Silva Jr.",
keywords = "Pholuminescence",
keywords = "Eletroluminescence",
keywords = "Nitrides semiconductors",
abstract = "Major developments in wide-gap III–V nitride semiconductors have recently led to the development of LEDs, where the relative intensity of the primary colors in heterostructured diodes can be adjusted to yield white light. Most of the work in III-nitrides, so far, has been done for hexagonal (wurtzite) structures, but research efforts towards a more complete understanding of the cubic (zincblende) nitride-derived heterostructures have increased recently. In particular, with fast and important advances on material processing technology. The AlInGaN quaternary alloy exhibits interesting features, such as higher emission intensity than the ternary AlGaN alloy for certain Al compositions. In addition, it is possible to reach the near ultraviolet (UV) region allowing to better adjustment of white-light emission by mixing different emission wavelengths with adequate intensities. In this work, we perform photoluminescence (PL) and electroluminescence spectra calculations of cubic InGaN/AlInGaN superlattices by using the k·p theory within the framework of the effective mass approximation. The calculations are carried out by solving the 8×8 Kane Hamiltonian. In our calculations, strain effects due to lattice mismatch and the split-off hole band are taken into account. Theoretical PL spectra of these systems are shown and we discuss the effects imposed by Al molar fraction, superlattice composition and structure on the white-light emission properties of the system."
}
@article{deMedeiros20051006,
title = "Exciton–polaritons in nanostructured nitride superlattices",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1006 - 1010",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001515",
author = "F.F. de Medeiros and E.L. Albuquerque and M.S. Vasconcelos",
keywords = "Nanostructures",
keywords = "Semiconductors",
keywords = "Optical properties",
keywords = "Exciton–polaritons",
abstract = "In this work we study the propagation of exciton–polaritons (bulk and surface modes) in a binary superlattice ABAB…, truncated at z=0, where z is defined as the growth axis. Here A is the spatially dispersive medium, which alternates with a common dielectric medium B (sapphire-Al2O3). The excitonic medium (A) is modelled by a semiconductor from the nitride's family (III–V semiconductor) that has, as a main characteristic, a wide-direct gap. The exciton-polariton spectrum is determined, in both s and p-polarization, by using standard electromagnetic boundary conditions, together with an additional boundary condition (ABC) for the Wannier–Mott excitons, employing a transfer-matrix formalism to simplify the algebra. The dispersion relation shows a bottleneck profile for the superlattice modes, whose behavior is similar to those found in the bulk crystal. Furthermore, interesting properties are revealed from the ABC as well as from different ratios of the thickness of the two superlattices alternating materials."
}
@article{daSilvaJr20051011,
title = "Statistical analysis of topographic images of nanoporous silicon and model surfaces",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1011 - 1015",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001527",
author = "J.B. da Silva Jr. and E.A. de Vasconcelos and B.E.C.A. dos Santos and J.A.K. Freire and V.N. Freire and G.A. Farias and E.F. da Silva Jr.",
keywords = "Porous silicon",
keywords = "Atomic force microscopy",
keywords = "Self-affine surfaces",
keywords = "Atomic force microscopy",
keywords = "Fractal analysis",
keywords = "Random rough surfaces",
abstract = "We investigated the quantitative description of nanoporous silicon morphology and its correlation with electrical and optical properties. We performed first-order as well as second-order statistical analysis of AFM images of nanoporous silicon fabricated by two different methods: reaction-induced-vapor-phase-stain-etch and electrochemical. We also simulated AFM images by generation of various model surfaces. From the height–height correlation plots, we were able to observe the effects of the growth method on RMS roughness parameter and verify that photoluminescence can be observed despite very small changes in silicon surface morphology. The analysis of the model surfaces showed that it is possible to reproduce the self-affine character of the porous surfaces by means of a linear combination of sine surfaces."
}
@article{Lima20051016,
title = "Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1016 - 1019",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001539",
author = "F.M.S. Lima and A.B. Veloso and A.L.A. Fonseca and O.A.C. Nunes and E.F. da Silva Jr",
keywords = "Quantum wells",
keywords = "InGaAs/InP",
keywords = "Alloy scattering",
keywords = "Electron mobility",
abstract = "In this paper, the low-field carrier mobility is investigated for quasi-2D electrons in a n-doped In0.53Ga0.47As/InP single symmetric quantum well. An accurate variational scheme is developed in view to determine the subband structure in this lattice-matched heterostructure. In this scheme, the Schrödinger–Poisson coupled equations are solved observing adequate matching conditions at the heterointerfaces, as well as exchange-correlation corrections to the Hartree potential. The results allowed us to compute the main scattering rates. Some interchanges in these scattering rates were found with respect to the limitation of electron mobility by varying the well and the spacer widths."
}
@article{Lemos20051020,
title = "Li-inserted carbon nanotube Raman scattering",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1020 - 1022",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001540",
author = "V. Lemos and S. Guerini and S.M. Lala and L.A. Montoro and J.M. Rosolen",
keywords = "Single wall carbon nanotubes",
keywords = "Lithium intercalation",
keywords = "Raman scattering",
abstract = "The possibility of inserting lithium into single wall carbon nanotube bundles during the growth process is analyzed in this work by using the Raman technique as probe. The nanotubes were prepared by the arc discharge method by using catalysts prepared by mixing compounds containing lithium and as their counterpart, a similar mixture without this alkali-metal. The two pair of samples studied in this work were obtained with the following catalysts: (i) Li2CO3/NiO/CoO and NiO/CoO; or (ii) LiCo0.5Ni0.5O2 and Ni/Co. Raman spectra reveal that the tangential bands profiles of the samples prepared with the catalyst containing lithium is considerably modified in both cases. In the case of the carbon nanotubes obtained using the LiCo0.5Ni0.5O2 catalyst a down shift and severe broadening are observed in addition. Comparison of our results with those published previously for alkali-metals doped single wall carbon nanotubes allowed to conclude that lithium incorporation, actually, occurs during the growth process."
}
@article{daSilva20051023,
title = "Design and development of two-dimensional position sensitive photo-detector",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1023 - 1025",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001552",
author = "R.C.G. da Silva and H. Boudinov and R.R.B. Correia",
keywords = "Position sensitive detector",
keywords = "Silicon",
keywords = "Majority carriers",
abstract = "Position sensitive photo-detectors (PSDs) utilize the lateral photovoltaic effect to produce an electrical output that varies linearly with the position of a light spot incident on a semiconductor junction. Design, fabrication and characterization of newly developed silicon PSD, which employ the planar technology and double ion implantation with different doses, are described. Shallow and low-doped p–n junction is formed by boron implantation in n-type silicon substrate. The position characteristics of PSD are symmetric to the zero and linear in the 80% of the active area. For a higher resistivity top layer (lower implanted dose), the sensitivity grows up and the linearity gets improved. The influence of the substrate is not substantial for the position characteristics. The response of the sensor, measured by pulsed 15 ns laser, was determined to be about 100 ns. Described PSD has been used in the construction of simple light spot rotational follower."
}
@article{Soares20051026,
title = "Ab initio calculation of the SiC (100) surfaces phonon dispersion",
journal = "Microelectronics Journal",
volume = "36",
number = "11",
pages = "1026 - 1028",
year = "2005",
note = "4th Workshop of Semiconductor Nanodevices and Nanostructured Materials NanoSemiMat-4",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.028",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001564",
author = "J.S. Soares and H.W. Leite Alves",
keywords = "Surfaces",
keywords = "Lattice dynamics",
keywords = "SiC",
keywords = "Density functional theory",
abstract = "In this work, we have calculated ab initio the vibrational modes and the phonon frequencies for the SiC (100) surfaces. Our results are in good agreement with the available experimental data whenever this comparison is possible: in fact, most of our obtained results are predictions. For the accepted models of the C-terminated surfaces in the c(2×2) reconstruction, while in the bridge-dimer model there is an acetylene-like vibrational A1 mode at 2031 cm−1, which is infrared active, in the staggered-dimer model, there is a Füchs-Kliewer (FK) mode at 1328 cm−1, which is experimentally detected. For Si-terminated surfaces in the (2×1) reconstruction, instead, no FK was obtained, in contradiction with the HREELS experimental results for the Si-terminated surfaces, but it is in consonance with the fact that this surface should be described by a (3×2) or more complex reconstruction patterns."
}
@article{Gomez2005869,
title = "Preface for SLAFES XVI proceedings",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "869 - ",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002132",
author = "Jesús González Gomez and Isaac Hernández-Calderón"
}
@article{F2005870,
title = "Quasiregular heterostructures: An overview of the current situation",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "870 - 875",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002144",
author = "F. and García-Moliner",
abstract = "Mathematical research on quasiregular sequences has provided a sound foundation for the analysis of their formal properties. However, physical research on heterostructures following these sequences appears to largely ignore this formal basis. The topology of the spectra is seldom studied in a sufficiently complete way and claims of self-similarity usually lack precision and rigour. In a critical overview of the current situation, limitations are pointed out and directions for further progress are suggested. The discussion focuses on the possible prospects, so far comparatively scarce, for device design. Theoretical research, which mostly dominates the scene, appears to have scarcely stimulated experimental work."
}
@article{F2005876,
title = "Why green functions for matching?",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "876 - 881",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002156",
author = "F. and García-Moliner",
abstract = "Work on Surface Green Function Matching (SGFM) has been the subject of extensive collaborations with members of the Iberoamerican community of solid state physicists. The conceptual frame, the basic general results and their meaning, form and generality of scope are discussed. The practical aspects of SGFM calculations are discussed, with attention to formal arguments which prove useful in practice and to computational transfer matrix techniques. A wide range of selected applications are presented. The approach taken is a historical—not strictly chronological—perspective with emphasis on the significance of the results in their own time, as well as a reflection of the collaborations with many members of this community."
}
@article{VR2005882,
title = "Electronic spectra of quasi-regular Fibonacci systems: Analysis of simple 1D models",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "882 - 885",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002168",
author = "V.R. and Velasco",
keywords = "Quasi-regular heterostructures",
keywords = "Electron states",
abstract = "The electronic spectra of quasi-regular systems grown following the Fibonacci sequence are investigated via simple one-dimensional tight-binding, one-band models. Different models are considered and the influence of the model parameters and the number of atoms entering the different blocks on the electronic spectrum are discussed."
}
@article{Gurevich2005886,
title = "Transport phenomena in bipolar semiconductors: a new point of view",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "886 - 889",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500217X",
author = "Yu.G. Gurevich and A. Ortiz and G.N. Logvinov and I.N. Volovichev and O.Yu. Titov and J. Giraldo and A. Gutiérrez",
abstract = "In previous work it has been shown that the traditional approach to transport phenomena in bipolar semiconductors is inconsistent. In particular, the effect of non-equilibrium charge carriers and appropriate boundary conditions are not considered in the literature. We have proposed an alternative for linear transport but some effects due to the relationship between the fluctuations in the densities of charge carriers and the temperature gradients were not discussed. Here, we continue our criticism to the conventional treatment and extend the previous model to discuss transport phenomena in a linear approximation and boundary conditions as applied to plane interfaces. By the first time charge carriers out of equilibrium, temperature fields, surface and bulk recombination processes, space charge distribution, etc. are undertaken self-consistently. Our model is contrasted with recent experimental results on the Seebeck coefficient of Cd1−xZnxTe."
}
@article{R2005890,
title = "SGFM and the new FISIM states",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "890 - 892",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002181",
author = "R. and Baquero",
abstract = "The Surface Green's Function Matching (SGFM) method is useful to distinguish the bulk effects from the surface ones since it calculates the two Green's functions separately in a neat and direct way. We have used this feature of the method to establish the correct interpretation of the Frontier Induced Semi-Infinite Medium (FISIM) states. We discuss the valence band electronic structure of the (001) oriented II–VI wide band gap zinc-blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands. Two of these resonances correspond to the anion-terminated surface and the third one to the cation terminated one. Further, we have shown that three non-dispersive (001)-surface-induced bulk states are also characteristic of these systems. These are neither surface nor Bloch states. These are states localized in planes perpendicular to the surface with non-vanishing spectral weight inside the bulk. They are not Bloch states since they are the consequence of the surface-boundary condition and their characteristics depend on the direction of the surface, they are therefore, surface-induced bulk states. In this talk, I briefly review our description of these systems. I also quote that similar states are present in other systems as calcopirites and at interfaces and superlattices, as well. These states are, actually, a general wave property and appear as the consequence of the boundary condition set by the presence of any frontier. For that reason, we have decided to call them Frontier Induced Semi-infinite Medium (FISIM) states."
}
@article{FroufePérez2005893,
title = "A Monte Carlo approach to determine conductance distributions in quasi-one-dimensional disordered wires",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "893 - 899",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500220X",
author = "L.S. Froufe-Pérez and P. García-Mochales and P.A. Serena and P.A. Mello and J.J. Sáenz",
keywords = "Electron transport",
keywords = "Disordered wires",
keywords = "Conductance distributions",
abstract = "A detailed analysis of the statistical distribution of conductance P(g) of quasi-one-dimensional disordered wires in the metal–insulator crossover is presented. The distribution P(g) is obtained from a Monte Carlo solution of the Dorokhov, Mello, Pereyra and Kumar (DMPK) scaling equation, showing full agreement with ‘tight-binding’ numerical calculations of bulk disordered wires. Perturbation theory is shown to be valid even for mean dimensionless conductance values <g> of the order of 1. In the crossover from diffusive to localized regimes (<g><1), P(g) presents a characteristic shape different from that observed in surface disordered wires."
}
@article{Broto2005900,
title = "Electronic transport in one-dimensional Ca3Co2O6 single crystal",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "900 - 906",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002211",
author = "J.M. Broto and B. Raquet and M.N. Baibich and M. Costes and H. Rakoto and S. Lambert and A. Maignan",
keywords = "Magnetization",
keywords = "Magnetotransport",
keywords = "High magnetic field",
keywords = "One dimensional system",
abstract = "The electronic conductivity study of the quasi-one-dimensional Ca3Co2O6 single crystal evidences a Variable Range Hopping conductivity with temperature-induced crossover between 1D and 3D transport and the opening of a Coulomb gap in the d bands along with the ferromagnetic intra-chain ordering. A large negative magneto-resistance is observed at low temperatures. Both spin-dependent hopping and field-induced suppression of the Coulomb gap are discussed. The electronic hopping parameters we infer agree remarkably with the accessible Co sites. Finally, we present the first electronic noise study in a one-dimensional frustrated magnetic single crystal and we discuss the interplay between the low temperature 3D magnetic ordering and the spin-dependent hopping conductivity on the Co sites."
}
@article{Ismardo2005907,
title = "Low temperature magnetic penetration depth in d-wave superconductors",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "907 - 912",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002223",
author = "Ismardo and Bonalde",
keywords = "Magnetic penetration depth",
keywords = "d-wave superconductors",
keywords = "Low temperature",
abstract = "We briefly review the experimental results of the low temperature magnetic penetration depth λ(T) of d-wave superconductors. In very clean high-Tc superconductors (HTSC) the low temperature in-plane penetration depth λ‖(T) varies linearly with T. A weaker power law temperature dependence is found for the out-of-plane penetration depth λ⊥(T) in most of HTSC. In the organic superconductors κ-(BEDT-TTF)2X [X=Cu(NCS)2, Cu[N(CN)2]Br] and slightly dirty HTSC λ‖∝bT2/(T*+T), where T ∗ ≈ Γ Δ 0 is deduced from an impurity scattering model. In clean CeCoIn5 a crossover from linear to quadratic temperature behavior at low T was interpreted as the first evidence for nonlocal effects in a d-wave superconductor."
}
@article{Buendía2005913,
title = "Surface scaling analysis of hydrogels: From multiaffine to self-affine scaling",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "913 - 916",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002235",
author = "G.M. Buendía and S.J. Mitchell and P.A. Rikvold",
keywords = "Self-affine scaling",
keywords = "Multiaffine scaling",
keywords = "Hydrogels",
keywords = "Atomic force microscopy",
abstract = "We show that smoothing of multiaffine surfaces that are generated by simulating a crosslinked polymer gel by a frustrated, triangular network of springs of random equilibrium lengths [G. M. Buendía, S. J. Mitchell, P. A. Rikvold, Phys. Rev. E, 66 (2002) 046119] changes the scaling behavior of the surfaces such that they become self-affine. The self-affine behavior is consistent with recent atomic force microscopy (AFM) studies of the surface structure of crosslinked polymer gels into which voids are introduced through templating by surfactant micelles [M. Chakrapani, S. J. Mitchell, D. H. Van Winkle, P. A. Rikvold, J. Colloid Interface Sci. 258 (2003) 186]. The smoothing process mimics the effect of the AFM tip that tends to flatten the soft gel surfaces. Both the experimental and the simulated surfaces have a non-trivial scaling behavior on small length scales, with a crossover to scale-independent behavior on large scales."
}
@article{CoronaOrganiche2005917,
title = "The interferometric mirage effect method: The determination of the thermal diffusivity of CdMnTe",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "917 - 921",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002247",
author = "E. Corona-Organiche and E. López-Cruz and C. Vázquez-López and Juan E. Morales",
keywords = "Interferometric thermal instrument",
keywords = "Thermal diffusivity",
keywords = "CdMnTe semiconductor",
keywords = "Mirage effect",
abstract = "A Michelson interferometer was used as a precise detector in the Mirage effect configuration in order to determine the thermal diffusivity of the diluted magnetic semiconductor Cd1−xMnxTe, in the concentration range 0<x<0.6 at room temperature. This zinc-blende ternary alloy exhibits an almost linear behavior of the thermal diffusivity as a function of Mn concentration. This trend is similar to that of the energy gap against Mn concentration, which increases linearly as the nominal x value increases. The latter result was tested by electrolytic electroreflectance measurements."
}
@article{Camacho2005922,
title = "Intersubband transitions in quantum wells as sources of Thz radiation",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "922 - 927",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002259",
author = "A.S. Camacho and R.M. Gutiérrez and G. Ardila",
keywords = "Quantum wells",
keywords = "Ultrafast light pulses",
keywords = "Electron.LO-phonon scattering rates",
keywords = "Absorption",
keywords = "Laser design",
abstract = "A suitable engineered asymmetric double quantum well can be designed as a three level system, in which intersub-band transitions between these three states give rise to Terahertz radiation. Due to the lack of sources in this region of the electromagnetic spectrum, this subject is of technological interest. We study in this work two different tunneling processes, which can be observed in this device: coherent and resonant. The latter is related to incoherent processes that can be applied for devices filling the Terahertz gap. The absorption spectra of superlattices built from asymmetric double quantum wells are calculated and a possible population inversion mechanism is proposed. On the other hand, an ultrafast optical excitation creates in an asymmetric double quantum well a macroscopically coherent superposition of the two excited conduction sub-bands. The components eigenstates of the wave packet subsequently evolve at different rate leading to quantum beats and therefore to coherent tunneling between the two wells."
}
@article{Sans2005928,
title = "Optical properties of wurtzite and rock-salt ZnO under pressure",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "928 - 932",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002260",
author = "J.A. Sans and A. Segura and F.J. Manjón and B. Marí and A. Muñoz and M.J. Herrera-Cabrera",
abstract = "This paper reports on the pressure dependence of the optical absorption edge of ZnO in the wurtzite and rock-salt phase, up to 14 GPa. Both vapor-phase monocrystals and pulsed-laser-deposition thin films have been investigated. In both types of samples the wurtzite to rock-salt transition is observed at 9.7±0.2 GPa. The absorption tail of the fundamental gap, as measured in monocrystals, exhibits a pressure coefficient of 24.5±2 meV/GPa. The evolution under pressure of the full absorption edge of the wurtzite phase is studied with thin film samples, yielding a slightly lower pressure coefficient (23.0±0.5 meV/GPa for the A–B exciton). Rock-salt ZnO is shown to be an indirect semiconductor with a bandgap of 2.7±0.2 eV. At higher photon energy a direct transition (Egd–4.5 eV) can be also identified in thin films transited to the rock-salt phase. Results on the high-pressure phase are interpreted on the basis of density-functional-theory (DFT) electronic structure calculations."
}
@article{Giffard2005933,
title = "Chiral salts for nonlinear optics: Prospects and achievements",
journal = "Microelectronics Journal",
volume = "36",
number = "10",
pages = "933 - 938",
year = "2005",
note = "SLAFES SLAFES XVI proceedings",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002272",
author = "M. Giffard and N. Mercier and G. Mabon and X. Nguyen Phu and M. Sylla and P. Delhaès and H. Soscún and O. Castellano and J. Hernández and L. Rodríguez and A. Marcano and V. Yartsev",
keywords = "Nonlinear optics",
keywords = "Chiral salts",
keywords = "First hyperpolarizability",
abstract = "It is expected from theoretical models that, with comparable structure, anions will possess much higher intrinsic polarizabilities than neutral molecules. We suggest that noncentrosymmetric salts, obtained by associating large polarizable aromatic anions (ArS−, ArCO 2 − or anionic metal complexes) with chiral cations will be good candidates for 2nd order NLO properties. Along with theoretical results, preliminary Second Harmonic Generation experiments on chiral thiolates salts are presented and the possibilities of development of this concept are discussed."
}
@article{DeVenuto2005787,
title = "International Symposium on Quality Electronic Design",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "787 - 788",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002041",
author = "Daniela De Venuto and Tom Chen"
}
@article{Qin2005789,
title = "Standby supply voltage minimization for deep sub-micron SRAM",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "789 - 800",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002053",
author = "Huifang Qin and Yu Cao and Dejan Markovic and Andrei Vladimirescu and Jan Rabaey",
keywords = "SRAM",
keywords = "Leakage suppression",
keywords = "DRV",
keywords = "Data retention",
keywords = "State preservation",
keywords = "Variation",
abstract = "Suppressing the leakage current in memories is critical in low-power design. By reducing the standby supply voltage (VDD) to its limit, which is the data retention voltage (DRV), leakage power can be substantially reduced. This paper models the DRV of a standard low leakage SRAM module as a function of process and design parameters, and analyzes the SRAM cell stability when VDD approaches DRV. The DRV model is verified using simulations as well as measurements from a 4 KB SRAM chip in a 0.13 μm technology. Due to a large on-chip variation, DRV of the 4 KB SRAM module ranges between 60 and 390 mV. Measurements taken at 100 mV above the worst-case DRV show that reducing the SRAM standby VDD to a safe level of 490 mV saves 85% leakage power. Further savings can be achieved by applying DRV-aware SRAM optimization techniques, which are discussed at the end of this paper."
}
@article{Chatterjee2005801,
title = "Designing leakage tolerant, low power wide-OR dominos for sub-130 nm CMOS technologies",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "801 - 809",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002065",
author = "Bhaskar Chatterjee and Manoj Sachdev and Ram Krishnamurthy",
abstract = "In this paper, we discuss the design of leakage tolerant wide-OR domino gates for deep submicron (DSM), bulk CMOS technologies. Technology scaling is resulting in a 3×–5× increase in transistor IOFF/μm per generation causing 15–30% degradation in the noise margin of high performance domino gates. We investigate several techniques that can improve the noise margin of domino logic gates and thereby ensure their reliable operation for sub-130 nm technologies. Our results indicate that, selective usage of dual VTH transistors shows acceptable energy-delay tradeoffs for the 90 nm technology. However, techniques like supply voltage (Vcc) reduction or using non-minimum Le transistors are required in order to ensure robust and low power operation of wide-OR domino designs for the 70 nm generation."
}
@article{Daniela2005810,
title = "Testing high resolution ΣΔ ADC's by using the quantizer input as test access",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "810 - 819",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002077",
author = "Daniela and De Venuto",
keywords = "Test",
keywords = "High-resolution ΣΔ ADC",
abstract = "A new solution to improve the testability of high resolution ΣΔ Analogue to Digital Converters (ΣΔ ADC's) using the quantizer input as test node is described. The theoretical basis for the technique is discussed and results from high level simulations for a 16 bit, fourth order, audio ADC are presented. The analysis demonstrates the potential to reduce the computational effort associated with test response analysis versus conventional techniques. If only SNR, THD and gain of the ΣΔ ADC are evaluated with the new proposed method the test time is already reduced by 20%."
}
@article{Halder2005820,
title = "Test generation for specification test of analog circuits using efficient test response observation methods",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "820 - 832",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002089",
author = "Achintya Halder and Abhijit Chatterjee",
keywords = "Analog testing",
keywords = "Specification testing",
keywords = "Parametric failure",
keywords = "Automated test generation",
keywords = "Automated test point selection",
keywords = "Analog waveform capture",
abstract = "In this paper, a new automated test generation methodology for specification testing of analog circuits using test point selection and efficient analog test response waveform capture methods for enhancing the test accuracy is proposed. The proposed approach co-optimizes the construction of a multi-tone sinusoidal test stimulus and the selection of the best set of test response observation points. For embedded analog circuits, it uses a subsampling-based digitization method compatible with IEEE 1149.1 to accurately digitize the analog test response waveforms. The proposed specification approach uses ‘alternate test’ framework, in which the specifications of the analog circuit-under-test are computed (predicted) using statistical regression models that are constructed based on process variations and corresponding variations of test responses captured from different test observation points. The test generation process and the test point selection process aim to maximize the accuracy of specification prediction. Experimental results validating the proposed specification test approach are presented."
}
@article{Grecu2005833,
title = "Timing analysis of network on chip architectures for MP-SoC platforms",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "833 - 845",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002090",
author = "Cristian Grecu and Partha Pratim Pande and André Ivanov and Res Saleh",
keywords = "MP-SoC",
keywords = "NoC",
keywords = "Pipelining",
keywords = "Bus",
keywords = "Scalability",
abstract = "Recently, the use of multiprocessor system-on-chip (MP-SoC) platforms has emerged as an important integrated circuit design trend for high-performance computing applications. As the number of reusable intellectual property (IP) blocks on such platforms continues to increase, many have argued that monolithic bus-based interconnect architectures will not be able to support the clock cycle requirements of these leading-edge SoCs. While hierarchical system integration using multiple smaller buses connected through repeaters or bridges offer possible solutions, such approaches tend to be ad hoc in nature, and therefore, lack generality and scalability. Instead, many different forms of network on chip (NoC) architectures have been proposed in the past few years to specifically address this problem. We believe that the NoC approach will ultimately be the preferred communication fabric for next generation designs. To support this conjecture, this paper demonstrates, through detailed circuit design and timing analysis that different proposed NoC architectures to date are guaranteed to achieve the minimum possible clock cycle times in a given CMOS technology, usually specified in normalized units as 10–15 FO4 delays. This is contrasted with the bus-based approach, which may require several design iterations to deliver the same performance when the number of IP blocks connected to the bus exceeds certain limits."
}
@article{Shen2005846,
title = "Robustness enhancement through chip-package co-design for high-speed electronics",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "846 - 855",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002119",
author = "Meigen Shen and Jian Liu and Li-Rong Zheng and Esa Tjukanoff and Hannu Tenhunen",
keywords = "Chip-package co-design",
keywords = "Pins assignment",
keywords = "Impedance-controlled package",
keywords = "Equalization",
abstract = "The low interaction between chip and package design has an increasingly limiting effect on the system performance. In this paper, the chip-package co-design flow is presented. We address robustness enhancement under the package and interconnection constraints as well as process, voltage, and temperature (PVT) variations by using impedance control, optimal pins assignment and transmitter equalization. From the simulation results we find that without on-chip digital compensation circuit, the variation of the driver's output impedance is 37% under different PVT conditions. However, it is only 5% when digital compensation circuit is used. Through optimal pins assignment the effective inductance of the pins is reduced. When power and ground pins are used as shielding pins, crosstalk is also decreased by 10 dB. Transmitter equalization effectively decreases inter-symbol interference caused by interconnection attenuation and dispersion. In our design example we find that without equalization the eye-diagram is almost closed at the receiver end. On the other hand with one-tap pre-emphasis equalization the eye-diagram is open and has a height of 90 mV and a width of 140 ps. It is also found that there is a clear optimal window for high data rate in this design. Without a chip-package co-design such an optimal window will not be found."
}
@article{Almukhaizim2005856,
title = "Compaction-based concurrent error detection for digital circuits",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "856 - 862",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002107",
author = "Sobeeh Almukhaizim and Petros Drineas and Yiorgos Makris",
keywords = "Compaction",
keywords = "On-line testing",
keywords = "Reliability",
keywords = "Self-checking",
keywords = "Self-testing",
abstract = "We present a non-intrusive concurrent error detection (CED) method for combinational and sequential digital circuits. We analyze the optimal solution model and point out the limitations that prevent logic synthesis from yielding a minimal-cost monolithic CED implementation. We then propose a compaction-based alternative approach for restricted error models. The proposed method alleviates these limitations by decomposing the CED functionality into: compaction of the circuit outputs, prediction of the compacted responses, and comparison. We model the fault-free and erroneous responses as connected vertices in a graph and perform graph coloring in order to derive the compacted responses. The proposed method is first discussed within the context of combinational circuits, with zero detection latency, and subsequently extended to Finite State Machines (FSMs), with a constant detection latency of one clock cycle. Experimental results demonstrate that the proposed method achieves significant hardware reduction over duplication-based CED, while detecting all possible errors."
}
@article{Kursun2005863,
title = "Monolithic voltage conversion in low-voltage CMOS technologies",
journal = "Microelectronics Journal",
volume = "36",
number = "9",
pages = "863 - 867",
year = "2005",
note = "ISQED 2004 International Symposium on Quality Electronic Design 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205002120",
author = "Volkan Kursun and Vivek K. De and Eby G. Friedman and Siva G. Narendra",
keywords = "Low-voltage DC–DC converters",
keywords = "Monolithic DC–DC conversion",
keywords = "High DC–DC voltage conversion ratio",
keywords = "Transistor reliability",
keywords = "High-voltage stress",
abstract = "A high-to-low switching DC–DC converter that operates at input voltages up to two times as high as the maximum voltage permitted in a low-voltage CMOS technology is proposed in this paper. The proposed circuit technique is based on a cascode bridge that maintains the steady-state voltage differences among the terminals of all of the transistors within a range imposed by a specific low-voltage CMOS technology. An efficiency of 87.8% is achieved for 3.6–0.9 V conversion assuming a 0.18 μm CMOS technology. The DC–DC converter operates at a switching frequency of 97 MHz while supplying a DC current of 250 mA to the load."
}
@article{Wan2005687,
title = "Influence of transient flow and solder bump resistance on underfill process",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "687 - 693",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.05.022",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500203X",
author = "J.W. Wan and W.J. Zhang and D.J. Bergstrom",
keywords = "Transient effect, Solder bump resistance",
keywords = "Dynamic contact angle",
keywords = "Underfill flow",
keywords = "Fluid filling time",
abstract = "The underfill flow process is one of the important steps in Microsystems technology. One of the best known examples of such a process is with the flip-chip packaging technology which has great impact on the reliability of electronic devices. For optimization of the design and process parameters or real-time feedback control, it is necessary to have a dynamic model of the process that is computationally efficient yet reasonably accurate. The development of such a model involves identifying any factors that can be neglected with negligible loss of accuracy. In this paper, we present a study of flow transient behavior and flow resistance due to the presence of an array of solder bumps in the gap. We conclude (1) that the assumption of steady flow in the modeling of the flow behavior of fluids in the flip-chip packaging technology is reasonable, and (2) the solder bump resistance to the flow can not be neglected when the clearance between any two solder bumps is less than 60–70 μm. We subsequently present a new model, which extends the one proposed by Han and Wang in 1997 by considering the solder bump resistance to the flow."
}
@article{AlAsmar2005694,
title = "Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "694 - 699",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.119",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500131X",
author = "R. Al Asmar and G. Ferblantier and J.L. Sauvajol and A. Giani and A. Khoury and A. Foucaran",
keywords = "Zinc oxide",
keywords = "Electron beam evaporation",
keywords = "Growth temperature",
keywords = "Annealing treatment",
keywords = "Raman measurements",
keywords = "Optical transmittance",
abstract = "High quality zinc oxide thin films have been deposited on silicon substrates by reactive e-beam evaporation in an oxygen environment. The effect of the growth temperature and air annealing on the structural, optical and electrical properties has been investigated. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented and that the linewidth of the (002) peak is sensitive to the variation of substrate temperature. The optimum growth temperature has been observed at 300 °C. Raman spectroscopy has been found to be an efficient tool to evaluate the residual stress in the as-grown ZnO films from the position of the E2 (high) mode. On the other hand, the vanishing of the 574 cm−1. Raman feature after annealing has been explained as due to an increase of grain size and the reduction of O-vacancy and Zn interstitial. The SEM images have shown that the surfaces of the electron beam evaporated ZnO became smoother for the growth temperatures higher than 300 °C. The optical transmittance is the highest at 300 °C and has been increased after annealing in air showing an improvement of the optical quality. Finally, the maximum electrical resistivity has been found at 300 °C, which explains its relation with the crystal quality and increased from 5.8×10−2 Ω cm to reach an approximate value of 109 Ω cm after annealing at 750 °C."
}
@article{Augustin2005700,
title = "A structure oriented compact thermal model for multiple heat source ASICs",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "700 - 704",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.125",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001308",
author = "Adam Augustin and Bartosz Maj and Arno Kostka",
keywords = "Thermal simulation",
keywords = "Compact model",
keywords = "Heat propagation",
keywords = "Geometry mapping",
abstract = "This paper proposes a methodology for the extraction of a compact thermal model for multiple heat source devices, which can be used for estimation of the overall temperature field. This extraction is based on the physical parameters as well as on the layout and the packaging of the device. The model directly represents the regions surrounding a source by a resistance network containing the specific parameters of source and chip in analytical form, so that it is easy to vary parameters like power dissipation and thermal conductivity within a wide range. In order to obtain a good and fast approximation of the continuous case, the shape of the volume elements represented by a node in the network is chosen regarding the direction of the heat flow within these elements. Therefore these volume elements are not rectangular but pyramid- or parallelogram-like structures. The temperature fields of multiple sources add up for the total temperature distribution, by the use of a matrix field representation."
}
@article{Mastro2005705,
title = "Simulation on the effect of non-uniform strain from the passivation layer on AlGaN/GaN HEMT",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "705 - 711",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.121",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001291",
author = "M.A. Mastro and J.R. LaRoche and N.D. Bassim and C.R. Eddy Jr.",
keywords = "High electron mobility transistors",
keywords = "PECVD",
keywords = "Passivation layer",
keywords = "GaN Strain",
abstract = "High electron mobility transistors (HEMTs) based on the III-nitride material system have attracted interest for high-frequency electronic components operating at high-power levels. Nitride based HEMTs can achieve power, bandwidth and efficiency levels that exceed the performance of Si, GaAs or SiC based devices. At present, a major limitation of nitride HEMTs is their failure to achieve reliability on par with Si-LDMOS or GaAs pHEMT devices. The development of SiNx passivation layers have largely mitigated the gate lag effect, however, this passivation layer introduces an additional strain that forms a non-uniform polarization induced charge. Furthermore, this excess strain can locally relax the film eliminating the piezoelectric induced charge in addition to forming defects that act as electron traps."
}
@article{HanChang2005712,
title = "Investigation of electromagnetic radiation induced by conducting wire of nanometer multi-quantum well device on InGaN LED",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "712 - 717",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.124",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500128X",
author = "Han-Chang and Tsai",
keywords = "EMI",
keywords = "CW",
keywords = "InGaN LED",
keywords = "Radiated power",
keywords = "Coupled efficiency constant",
abstract = "It is known that electromagnetic interference (EMI) has a negative effect upon the performance of electronic communication systems. The present study considers the case, where EMI is induced in an conducting wire (CW), and derives equations to establish the influence of the induced EMI on InGaN material of nanometer quantum well light-emitting diodes (LED). These equations are then verified experimentally. The present results indicate that the degree of influence of the EMI upon the InGaN LED device depends upon the interference power, the interference frequency, the induced power, the input resistance of the device, the inverse saturation currents, and the ideal factor of the LED. Moreover, the greater EMI amplitude and frequency, the greater deterioration I–V curves of the InGaN LED."
}
@article{Shankar2005718,
title = "A new rule-based clustering technique for defect analysis",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "718 - 724",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.120",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001278",
author = "N.G. Shankar and Z.W. Zhong",
keywords = "Rule-based",
keywords = "Defect clustering",
keywords = "Semiconductor inspection",
keywords = "Manufacturing",
abstract = "In joining defects on semiconductor wafer maps into clusters, it is common for defects caused by different sources to overlap. Simple morphological image processing tends to join either too many unrelated defects together or not enough together. Expert semiconductor fabrication engineers have demonstrated that they can easily group clusters of defects from a common manufacturing problem source into a single signature. Capturing this thought the process of clustering is ideally suited for rule-based systems. A system of rules was developed to join disconnected clusters based on the location of the defects. The clusters are evaluated on a pair-wise basis using the rules and are joined or not joined based on a threshold. The system continuously re-evaluates the clusters under consideration as the rules change with each joining action. The techniques used to measure the features, and methods for improving the speed of the system are developed. Examples of the process are shown using real-world semiconductor wafer maps obtained from chip manufacturers."
}
@article{Samantaray2005725,
title = "The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "725 - 728",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.03.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001266",
author = "C.B. Samantaray and Hyunjun Sim and Hyunsang Hwang",
keywords = "BaTiO3",
keywords = "SrTiO3",
keywords = "First-principles",
keywords = "Band structures",
keywords = "Optical properties",
abstract = "The electronic-energy band structures and total density of states (TDOS) for bulk BaTiO3 and SrTiO3 were calculated by the first-principles calculations using density-functional theory and local-density approximation. The calculated band structure of BaTiO3 and SrTiO3 show the energy band gaps of 1.81 and 1.92 eV at the Γ point in the Brillouin zone, respectively. The optical properties of the both perovskites in the core-level spectra are investigated by the first principles under scissor approximation. The optical constants like refractive index and extinction coefficient of both BaTiO3 and SrTiO3 were derived from the calculated real and imaginary parts of the dielectric function. The calculated spectra were compared with the experimental results for BaTiO3, SrTiO3 in good agreement."
}
@article{Starke2005729,
title = "Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "729 - 731",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001727",
author = "T.K.H. Starke and P. Igic",
keywords = "MAAP",
keywords = "NFA",
keywords = "Junction isolation",
keywords = "Power IC",
keywords = "Smart power",
keywords = "Minority carrier injection",
abstract = "A combination of two conventional junction isolation structures is used to produce a device, which significantly improves the blocking of minority carriers injected into the substrate of a power IC due to switching of an inductive load. Simulation results show that the connection scheme employed greatly enhances the efficiency of the structures. A substrate current reduction of up to four orders of magnitude compared to conventional junction isolation structures is achieved. The significance of doping profiles in the p-sinker region is evaluated."
}
@article{Alvaro2005732,
title = "Temperature and bias investigation of self heating effect and threshold voltage shift in pHEMT's",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "732 - 736",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001697",
author = "M. Alvaro and A. Caddemi and G. Crupi and N. Donato",
keywords = "pHEMT",
keywords = "Self-heating effect",
keywords = "Threshold voltage",
keywords = "Forward transmission parameter",
keywords = "Temperature",
abstract = "In the present work we analyze the performance of power pseudomorphic HEMT's having scaled gate widths (300, 600, 900 μm) under a wide range of bias and temperature conditions to investigate the onset of an hot electron regime. These devices exhibit a negative slope of ID with respect to VDS and a subsequent negative differential resistance under high power dissipation conditions. This reduction in the drain current can be explained by a degradation of the carrier velocity in the two dimensional electron gas due to the self-heating effect.
The output I−V characteristics of our devices are also affected by the threshold voltage shift. It results that the threshold voltage increases linearly by decreasing the temperature. This threshold voltage shift causes a decrease of the transconductance when the devices is biased closer to the pinch-off. Consequently, the forward transmission parameter S21 at microwaves shows a degradation at lower temperatures despite the fact that the transport properties improve upon cooling."
}
@article{Wang2005737,
title = "Fabrication and performance of novel RF spiral inductors on silicon",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "737 - 740",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001685",
author = "Xi-Ning Wang and Xiao-Lin Zhao and Yong Zhou and Xu-Han Dai and Bing-Chu Cai",
keywords = "RF",
keywords = "MEMS",
keywords = "Circular spiral inductor",
keywords = "Silicon",
keywords = "Wet-etching",
abstract = "This paper presents and discusses the fabrication and the performance of RF circular spiral inductors on silicon. The substrate materials underneath the inductor coil are removed by wet etching process. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure the seed layer and the pillars contact perfectly, and dry etching technique is used to remove the seed layer. The results show that Q-factor of the novel inductor is greatly improved by removing the silicon underneath the inductor coil. The spiral inductor for line width of 50 μm has a peak Q-factor of 17 at frequency of 1 GHz. The inductance is about 3.2 nH in the frequency range of 0.05–3 GHz and the resonance frequency of the inductors is about 6 GHz. If the strip is widened to 80 μm, the peak Q-factor of the inductor reduces to about 10 and the inductance is 1.5 nH in the same frequency range."
}
@article{Zhang2005741,
title = "SET-based nano-circuit simulation and design method using HSPICE",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "741 - 748",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.01.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000054",
author = "Fengming Zhang and Rui Tang and Yong-Bin Kim",
keywords = "SET modeling",
keywords = "SET simulation with HSPICE",
keywords = "SET circuit design",
abstract = "This paper presents a simulation and design method for complementary SET-based nano-circuits from a practical circuit design point of view. HSPICE behavioral implementation of modified Lientschnig's SET model based on the orthodox theory and the Birth–Death Markov chain is demonstrated and verified with Coulomb characteristics. It shows reduced CPU time, improvement of accuracy, and more compatibility with other SPICE softwares on both Windows and Unix platforms. The proposed design methodology presents how to build static CMOS-like SET circuits, and demonstrates that conventional CMOS circuit design methodologies are all applicable to SET circuit designs based on the methodology. HSPICE simulation results show that, for 1 MΩ junction resistance, the power consumption of a SET NAND2 gate is less than 0.3 pW, and the propagation delay for a SET XOR2 gate is 29.8 ns while driving a 10 aF load."
}
@article{Wang2005749,
title = "Enhancement of adhesion strength of Cu layer with low dielectric constant SiC:H liners in Cu interconnects",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "749 - 753",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001661",
author = "Grace Wang and S. Balakumar and S.C. Hwee and Rakesh Kumar and T. Hara",
keywords = "Adhesion strength",
keywords = "Cu layer",
keywords = "Trimethylsilane",
keywords = "Cu diffusion liner",
abstract = "One of the primary candidates for the liner/etch stop layer in damascene process is silicon nitride (Si3N4). However, silicon nitride has a high dielectric constant of 7.0. To reduce the effective dielectric constant in Copper (Cu) damascene structure, dielectric SiC:H (prepared by plasma enhanced chemical vapor deposition (PECVD) using trimethylsilane source) as the Cu diffusion barrier was studied. The dielectric constant of SiC:H used is 4.2. A systematic study was made on the properties of liner material and electro-chemically plated (ECP) Cu to enhance the adhesion strength in Cu/low-dielectric constant (k) multilevel interconnects. Though the effects of as Si3N4 the liner have been much studied in the past, less is known about the relation between adhesion strength of ECP Cu layer and physical vapor deposited (PVD) Cu seeds, with seed thickness below 1000 Å. The annealing of Cu seed layer was carried out at 200 °C in N2 ambient for 30 min was carried out to study the impact on adhesion strength and the microstructure evolution on the adhesion between ECP Cu and its barrier layer. In the study, our claim that SiC:H barrier/etch stop layer is essential for replacing conventional Si3N4 layer in enhancing adhesion strength and interfacial bonding between Cu/dielectric interconnects."
}
@article{C2005754,
title = "Switched-current (SI) integrators with reduced effect of transistor mismatches",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "754 - 762",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.01.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000030",
author = "C. and Psychalinos",
keywords = "Analog integrated circuits",
keywords = "Analog sampled-data circuits",
keywords = "Switched-current circuits",
abstract = "Switched-current (SI) circuits are widely used for analog sampled-data signal processing, due to their compatibility to the pure digital CMOS process. As their main building blocks are current mirrors, they suffer from the effects of MOS transistor parameters mismatch. In this paper, the Functional Block Diagram (FBD) of already known integrator circuits is modified in such a way that the number of required current mirrors is reduced. Thus, the behavior of the derived integrator topologies, with respect to the effect of MOS transistor parameters mismatch, is improved.
A comparison is performed, concerning the performance of the proposed bilinear integrator circuits and those that are already introduced in the literature. For this purpose, a fifth-order Chebyshev lowpass SI filter transfer function was simulated. In the case of the proposed filter configurations, the obtained results show that their performance is improved in terms of the effects of MOS transistor parameters mismatch, DC power dissipation, and total required silicon area."
}
@article{Hernández2005763,
title = "An integrated up-converter circuit in 0.8 μm SiGe technology for TV applications",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "763 - 769",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000029",
author = "E. Hernández and R. Berenguer and J. Legarda and J. Mendizabal and I. Cendoya",
keywords = "Active mixer",
keywords = "VCO",
keywords = "Balanced inductor",
keywords = "Varactor",
abstract = "This paper describes an up-converter circuit for a TV tuner chain that can be implemented in both analog and digital TV systems. The circuit is integrated into a low cost standard two metal layer 0.8 μm SiGe technology and is composed with class AB Gilbert cell based active mixer and differential voltage-controlled oscillator (VCO). The use of a high quality balanced inductor in the VCO allows achieving a measured oscillator phase noise of −104.2 dBc/Hz at 100 kHz from the carrier. The frequency conversion is from TV standard IF to RF. The results obtained in a frequency up-conversion from 36 to 1775 MHz are: a conversion gain of −2.25 dB, a noise figure of 14.4 dB and an OIP3 value of 9.1 dBm. The core power consumption is 33 mA from 5 V power supply."
}
@article{Ryu2005770,
title = "Low-cost test technique using a new RF BIST circuit for 4.5–5.5 GHz low noise amplifiers",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "770 - 777",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.01.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000042",
author = "Jee-Youl Ryu and Bruce C. Kim",
keywords = "RF Built-In Self-Test (BIST)",
keywords = "Low noise amplifiers",
keywords = "DC voltage measurements",
abstract = "This paper presents a low-cost test technique using a new RF Built-In Self-Test (BIST) circuit for 4.5–5.5 GHz low noise amplifiers (LNAs). The test technique measures input impedance, voltage gain, noise figure, input return loss and output signal-to-noise ratio of the LNA. The BIST circuit is designed using 0.18 μm SiGe technology. The BIST circuit contains test amplifier and RF peak detectors. The complete measurement set-up contains LNA with BIST circuit, external RF source, RF relays, 50 Ω load impedance, and a DC voltmeter. The test technique utilizes output DC voltage measurements and these measured values are translated to the LNA specifications such as input impedance and gain through the developed equations. The technique is simple and inexpensive."
}
@article{RodríguezCoppola2005778,
title = "Polarisability of a confined multisubband electron gas with exchange and correlation interactions",
journal = "Microelectronics Journal",
volume = "36",
number = "8",
pages = "778 - 785",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001740",
author = "H. Rodríguez-Coppola and F. García-Moliner and J. Tutor-Sánchez",
keywords = "Dielectric constant",
keywords = "SSTL-approximation",
keywords = "Quantum well wire",
keywords = "Exchange and correlation",
abstract = "The Singwi–Sjölander–Tosi–Lang approximation to the dielectric response of a 3D electron gas was designed to include exchange and correlation effects. This paper presents the formal extension to a low dimensionality, confined electron gas having a multisubband spectrum of one electron states. The quasi 1D case (quantum wire) is explicitly considered. It is seen that the analytical properties of the polarisability change quite significantly when manybody interactions are switched on."
}
@article{Bernard2005613,
title = "Special issue on European Micro and Nano Systems (EMN04) held in Paris, 20–21 October, 2004",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "613 - ",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.031",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001746",
author = "Bernard and Courtois"
}
@article{Giuseppe2005614,
title = "Perspectives and challenges in nanoscale device modeling",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "614 - 618",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.032",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001758",
author = "Giuseppe and Iannaccone",
keywords = "Nanoelectronics",
keywords = "Semiconductor device modelling",
keywords = "TCAD",
keywords = "Nanotechnology",
abstract = "In this paper, we discuss the role of adequate modelling tools in the development of nanoelectronic technology and devices, including both down-the-roadmap Complementary Metal-Oxide-Semiconductor (CMOS) technology and alternative nanodevices. Such tools can enable understanding of the relevant physical mechanisms on the one hand, and performance evaluation and optimization of device structures, on the other hand. Relevant examples are discussed, drawn by our recent activity, including ballistic strained-silicon Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs), stress-induced leakage currents, nanocrystal memories, and silicon nanowire transistors."
}
@article{Bernstein2005619,
title = "Magnetic QCA systems",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "619 - 624",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500176X",
author = "G.H. Bernstein and A. Imre and V. Metlushko and A. Orlov and L. Zhou and L. Ji and G. Csaba and W. Porod",
abstract = "The field-coupled QCA architecture has emerged as a candidate for providing local interconnectivity for nanodevices, and offers the possibility to perform very dense, high speed, and low power computing in an altogether new paradigm. Magnetic interactions between nanomagnets are sufficiently strong to allow room-temperature operation. We are investigating the fabrication and testing of arrays of nanomagnets for this purpose, and have found that by tailoring their shapes, strong coupling can be observed. This paper will present recent work of the Notre Dame group on magnetically coupled QCA."
}
@article{LeprinceWang2005625,
title = "Structure study of electrodeposited ZnO nanowires",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "625 - 628",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.033",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001771",
author = "Y. Leprince-Wang and A. Yacoubi-Ouslim and G.Y. Wang",
keywords = "Zinc oxide (ZnO)",
keywords = "Electrodeposition",
keywords = "Nanowires",
keywords = "Transmission electron microscopy (TEM)",
abstract = "In this work, we report on the structure study of electrodeposited ZnO nanowires. The samples were mounted as a working electrode and the deposition was performed in a classical three electrodes electrochemical cell. For obtaining ZnO nanowires, the working electrode was a polycarbonate membrane with a random distribution of nanometric pores, gilded one side to ensure electric contact. The morphology and structure characterizations of the different diameters ZnO nanowires were carried out by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The electrons pattern diffraction confirmed the same crystal structure of electrodeposited ZnO nanowires indexed by X-ray diffraction (XRD) on electrodeposited ZnO thin films: hexagonal ZnO phase with cell parameters a=0.32584 nm and c=0.52289 nm. Both TEM investigations and HRTEM images reveal a monocrystalline structure for electrodeposited ZnO nanowires. A roughness of few nanometers on the wire surface was observed. Meanwhile, no preferential growth direction has been obviously detected."
}
@article{Kakushima2005629,
title = "Silicon periodic nano-structures obtained by laser exposure of nano-wires",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "629 - 633",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.034",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001783",
author = "K. Kakushima and T. Bourouina and T. Sarnet and G. Kerrien and D. Débarre and J. Boulmer and H. Fujita",
keywords = "Silicon",
keywords = "Nano-wire",
keywords = "Nano-structure",
keywords = "Periodic",
keywords = "GILD",
keywords = "Excimer laser",
abstract = "Silicon nano-wires were fabricated using thin Silicon on Insulator (SOI) wafers and a combination of anisotropic wet etching by Tetra-Methyl Ammonium Hydroxide (TMAH) and Local Oxidation of Silicon (LOCOS). These nano-wires were submitted to laser exposure using gas immersion laser doping (GILD). The result was the formation of either periodic nano-structures or silicon balls. Since the process uses very short laser pulses, it involves rapid melting and solidification of silicon. Hence, the observed periodicity is ascribed to Rayleigh instability, which involves surface tension effects in melted silicon."
}
@article{Dzbanovsky2005634,
title = "The aligned Si nanowires growth using MW plasma enhanced CVD",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "634 - 638",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.035",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001795",
author = "N.N. Dzbanovsky and V.V. Dvorkin and V.G. Pirogov and N.V. Suetin",
keywords = "Si nanowires",
keywords = "Alignment",
keywords = "Chemical vapor deposition",
keywords = "Photoluminescence",
abstract = "New and simple modification of vapor–liquid–solid process for Si nanowires growth based on microwave plasma enhanced chemical vapor deposition that uses solid-state Si target as a source of Si atoms was developed. The method was temperature and pressure controlled evaporation of solid phase of Si source in hydrogen microwave plasma. Aligned growth of Si nanowires was performed in local electric field by applying of constant negative bias to substrate holder. Deposited Si nanowires were studied by scanning electron microscopy (SEM), Raman and photoluminescence spectroscopy. Correlation between photoluminescence spectra and Si nanowires properties were studied."
}
@article{Kante2005639,
title = "Electrical behaviour of fractal nanosized tin dioxide films prepared by electrodeposition for gas sensing applications",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "639 - 643",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.036",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001801",
author = "Ibrahima Kante and Thierry Devers and Rachid Harba and Caroline Andreazza-Vignolle and Pascal Andreazza",
keywords = "Nanomaterials",
keywords = "Fractals",
keywords = "Sensors",
keywords = "Tin dioxide",
keywords = "Sensitivity",
abstract = "An original electrochemical process to prepare SnO2 gas sensors is detailed and correlated to electrical behaviour under gas environment. In particular conditions, Tin material was electrodeposited on insulating substrate to form a thin film principally composed of a single layer of individual nanoaggregates (5–10 nm in size). After tin electrodeposition, these supported aggregates were oxidised at air or pressurized oxygen to induce the formation of a fractal SnO2 film. From these resulting active films, electrical measurements were carried out in ethanol and 300 ppm CO atmospheres. The results show, a sensitivity of 400% at 227 °C in the ethanol case with a response time of 140 s. When the temperature of electrical measurements increases, response and recovery times decrease. However, the sensing amplitude was not modified (Sensitivity around 4) between 250 and 300 °C. In the case of CO, the sensor presented a typical response with a factor of about 2.5 at 250 °C. A fractal dimension between 1.4 and 1.6 is found for fractal-shaped samples allowing an increase of specific surface in contact with gases. However, its does not effect sensitivity, which depends mainly on grain size."
}
@article{Layton2005644,
title = "Nanomanipulation and aggregation limitations of self-assembling structural proteins",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "644 - 649",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.051",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001813",
author = "Bradley E. Layton and Stephanie M. Sullivan and John J. Palermo and Gregory J. Buzby and Rishi Gupta and Richard E. Stallcup III",
keywords = "Self-assembly",
keywords = "Atomic force microscopy",
keywords = "Nanomanipulation",
keywords = "Collagen",
abstract = "Collagen, the most abundant protein on Earth, is used as a platform for studying three major hurdles of nanotechnology: (1) What is the aggregation limit in self-assembling systems? (2) What is the smallest scale at which matter can be reliably and repeatedly organized? (3) Where do the natural boundaries lie in what is achievable via directed manipulation at the nanoscale? Through work involving a mechanics-based model for predicting the radial aggregation limit of collagen fibrils using translation length, axial and torsional stiffness of the tropocollagen model, and specific binding sites, the 20–500 nm diameter distribution of collagen is explored, verifying previous atomic force microscopy data. Preliminary micromanipulation of collagen fibers with the Zyvex S100 also implicate the necessary steps to be taken in proposed nanomanipulation experiments. Results presented implicate: (1) That the aggregation limit of collagen fibrils and perhaps other structural proteins may be predicted by the mechanical properties of its molecular subunits wherein the outer portions of the fibril are in tension balanced by compressive stresses within the inner portions, (2) That currently the top-down style of nanomanipulation must be improved via advances in computational imaging if it is to keep pace with advancements which have been made at the microscale, and (3) That there exist tightly constrained paths which must be followed in order to create beneficial mutations at the molecular level."
}
@article{Wilke2005650,
title = "Process optimization and characterization of silicon microneedles fabricated by wet etch technology",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "650 - 656",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.044",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001825",
author = "N. Wilke and A. Mulcahy and S.-R. Ye and A. Morrissey",
keywords = "Microneedles",
keywords = "SIMODE",
keywords = "Wet etch",
keywords = "Silicon crystal planes",
abstract = "In this research, we have optimized a fabrication technique for manufacturing microneedle arrays in standard silicon wafer ((100) orientation) using potassium hydroxide (KOH) wet etching. The etch behaviour of silicon was simulated for different mask shapes and sizes using SIMODE software. In the context of the fabrication process, we demonstrate the influence of the mask design and the processing environment such as etching parameters and etch bath conditions on the formation of silicon microneedle structures (needle height up to 300 μm) and its reproducibility. Single needle shear tests have been carried out to characterize the mechanical stiffness of fabricated microneedles."
}
@article{ElSadi2005657,
title = "Simulation of complex liquids in micropump",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "657 - 666",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.037",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001837",
author = "Haifa El-Sadi and Nabil Esmail",
keywords = "Pitch",
keywords = "Microscrew",
keywords = "Surface sweep forces",
keywords = "Complex liquid",
keywords = "Thread",
abstract = "Complex liquids can be encountered in many applications of microdevices. In the present study, the performance of microscrew pump using complex liquid is investigated numerically. The microscrew pump operation depends on the surface sweep forces. It consists of a screw placed inside a microchannel. When the screw rotates, a net force is transferred to the fluid due to differential pressure on the depth of the thread and pressure gradient along the screw axis, thus causing the fluid to displace. Three-dimensional complex liquid simulations of micropump were performed.
The effect of screw pitch, thread, Reynolds number and pump load on the micropump performance has been studied. The simulations of complex liquids indicate that the highest bulk velocity is achieved with high thread depth at low Reynolds number. However, effective pumping is accomplished at low Reynolds number, high pressure load and high thread depths."
}
@article{Bintoro2005667,
title = "CMOS compatible bistable electromagnetic microvalve on a single wafer",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "667 - 672",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.038",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001849",
author = "Jemmy S. Bintoro and Peter J. Hesketh and Yves H. Berthelot",
keywords = "Bistable",
keywords = "CMOS",
keywords = "Electromagnetic",
keywords = "Surface micromachining",
keywords = "Microvalve",
keywords = "Microcoil",
abstract = "This paper presents our work in the bistable electromagnetic actuated microvalve. The microvalve is entirely fabricated by surface micromachining on top of a single Si (silicon) substrate. The microvalve has an overall diameter of 1600 μm and the overall height of 600 μm, including the wafer thickness. The bistable mechanism is achieved by integrating an electroplated micro CoNiMnP magnet on the membrane. The microvalve was tested in the flow of deionized (DI) water at 0–50 μL/min. The latching/unlatching of the microvalve was performed to control the flow DI water at 30 μL/min, it required the operational current of 0.38 A and the power of 1.17 W. The latching/unlatching response time of the microvalve is 10 ms, with the leaking rate of 0.16–0.8 μL/min."
}
@article{Marty2005673,
title = "Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "673 - 677",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.039",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001850",
author = "F. Marty and L. Rousseau and B. Saadany and B. Mercier and O. Français and Y. Mita and T. Bourouina",
keywords = "Micromachining",
keywords = "DRIE",
keywords = "HARMS",
keywords = "Sub-micron",
keywords = "3D",
keywords = "Silicon",
abstract = "Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes."
}
@article{Hsieh2005678,
title = "Anodic bonding of glass and silicon wafers with an intermediate silicon nitride film and its application to batch fabrication of SPM tip arrays",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "678 - 682",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.057",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001874",
author = "Gen-Wen Hsieh and Ching-Hsiang Tsai and Wei-Chih Lin",
keywords = "Anodic bonding",
keywords = "Scanning probe microscope",
abstract = "This paper reports a detailed study of wafer-level anodic bonding with a dielectric intermediate layer and its application to the fabrication of scanning probe microscope (SPM) probe arrays. First, the bonding performance between sodium-ion rich glass and silicon nitride coated silicon substrate is characterized. The effects of voltage, tool pressure, bonding time, surface properties, and cleanliness are thoroughly studied. Then, the silicon nitride based SPM probe arrays consisted of pyramidal tip and 1.5 μm-thickness cantilever are successful bonded and transferred to Pyrex 7740 glass substrate by use of our optimized wafer-scale electrostatic force bonding condition. The nano-imaging capability of the scanning probe array is also demonstrated."
}
@article{Pavolotsky2005683,
title = "Micromachining approach in fabricating of THz waveguide components",
journal = "Microelectronics Journal",
volume = "36",
number = "7",
pages = "683 - 686",
year = "2005",
note = "European Micro and Nano Systems EMN 2004",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.041",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001886",
author = "A. Pavolotsky and D. Meledin and C. Risacher and M. Pantaleev and V. Belitsky",
keywords = "Micromachining",
keywords = "Submillimeter waves",
keywords = "Submillimeter waveguide components",
keywords = "Waveguide coupler",
keywords = "Bolometers",
keywords = "Infrared",
keywords = "Heterodyne receivers",
abstract = "In this paper, we describe our progress in micromachining of submillimeter waveguide structures such as a quadrature waveguide coupler which is a part of a THz balanced heterodyne receiver. We have set up and developed pilot testing of the micromachining process with required high quality of structure."
}
@article{Henini2005173,
title = "Preface",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "173 - 174",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.101",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000066",
author = "Mohamed Henini and Isaac Hernández-Calderón"
}
@article{Bimberg2005175,
title = "Quantum dot photonic devices for lightwave communication",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "175 - 179",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.026",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000078",
author = "Dieter Bimberg and Matthias Kuntz and Matthias Laemmlin",
keywords = "Quantum dot",
keywords = "Photonic devices",
keywords = "Lightwave communication",
abstract = "For InAs–GaAs based Quantum Dot Lasers emitting at 1300 nm digital modulation showing an open eye pattern up to 12 Gb/s at room temperature is demonstrated, at 10 Gb/s the bit error rate is below 10−12 at −2 dBm receiver power. Cut-off frequencies up to 20 GHz are realised for lasers emitting at 1.1 μm. Passively mode-locked QD lasers generate optical pulses with repetition frequencies between 5 and 50 GHz, with a minimum Fourier limited pulse length of 3 ps. The uncorrelated jitter is below 1 ps. We use here deeply etched narrow ridge waveguide structures which show excellent performance similar to shallow mesa structures, but a circular far field at a ridge width of 1 μm, improving coupling efficiency into fibers. No beam filamentation of the fundamental mode, low α-factors and strongly reduced sensitivity to optical feedback is observed. QD lasers are thus superior to QW lasers for any system or network.
Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120–140 fs, 4–7 times faster than bulk/QW SOAs, and a net gain larger than 0.4 dB/(mm×QD layer) providing us with novel types of booster amplifiers and Mach–Zehnder interferometers.
These breakthroughs became possible due to systematic development of self-organized growth technologies."
}
@article{Tasco2005180,
title = "Improved performances of 1.3 μm InGaAs QD structures grown at high temperature by metal organic chemical vapour deposition",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "180 - 182",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.102",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500008X",
author = "V. Tasco and B. Potì and M. De Vittorio and M. De Giorgi and R. Cingolani and A. Passaseo",
keywords = "Quantum dots",
keywords = "InGaAs",
keywords = "Metal organic chemical vapour deposition",
keywords = "Laser",
abstract = "We present InGaAs quantum dots (QDs) grown by metal organic chemical vapour deposition in which, by increasing the growth temperature (from 550 up to 610 °C), a high emission efficiency beyond 1.3 μm and narrow linewidth (down to 22 meV at room temperature) can be preserved, with a relevant decrease of defect density. The possibility to grow QDs at higher temperature, close to the cladding growth temperature, allows a strong reduction of the annealing effect when the QDs are inserted in device structures. The spectral blue shift, consequence of this effect, is reduced of 90% in QDs grown at 590 °C, with respect to those grown at 550 °C, thus providing electroluminescence emission near 1.3 μm."
}
@article{Sun2005183,
title = "A comparative study of InAs quantum dot lasers with barriers of direct and indirect band gaps",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "183 - 185",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000091",
author = "G. Sun and Richard A. Soref and Jacob B. Khurgin",
keywords = "Quantum dot laser",
keywords = "Linewidth enhancement factor",
keywords = "Indirect short-period superlattice",
keywords = "Indium arsenide",
abstract = "We propose the idea of making quantum dot (QD) lasers by embedding direct-bandgap QDs in a short-period superlattice whose bandgap is indirect. In comparison with similar QD lasers with barriers of direct band gap, this technique not only reduces the temperature dependence of threshold current, but also leads to extremely small linewidth enhancement factor, making low-temperature sensitivity, low chirp, and narrow linewidth semiconductor lasers feasible."
}
@article{Torchynska2005186,
title = "Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "186 - 189",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000108",
author = "T.V. Torchynska and H.M. Alfaro Lopez and J.L. Casas Espinola and P.G. Eliseev and A. Stintz and K.J. Malloy and R. Pena Sierra and Eu. Shcherbina",
keywords = "Photoluminescence",
keywords = "Ground state",
keywords = "InAs quantum dots",
abstract = "This paper presents the investigation of photoluminescence (PL), connected with ground (GS) and four excited states (1–4-ES) in highly uniform self-assembled InAs quantum dots (QDs) embedded into the In0.15Ga0.8As layers, using variable pumping power (P) in the range 10–1000 W/cm2 at the temperature 12 K. The peak positions of GS and ES emission bands depend on an excitation light power. The energy differences between GS and 1–4ES optical transitions are not equidistant and equal to 48.8, 46.5, 40.3 and 33.4 meV, respectively, at highest power level. It was shown that many-particle effects in such high populated QDs is essential and the exchange/correlation and direct Coulomb contributions do not vanish in the investigated strong confined QDs."
}
@article{Yim2005190,
title = "Optical characteristics of In(Ga)As quantum dots on (100) InP substrate for 1.5 μm laser diodes",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "190 - 193",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.058",
url = "http://www.sciencedirect.com/science/article/pii/S002626920500011X",
author = "J.S. Yim and J.H. Lee and Y.D. Jang and M.D. Kim and D. Lee and H.D. Kim and S.H. Pyun and W.G. Jeong and J.S. Kim and S.U. Hong and D.K. Oh",
keywords = "Quantum dot",
keywords = "Laser diode",
keywords = "InP",
abstract = "We report on round quantum dots grown on InP (100) substrate, which emit around 1.55 μm. At 10 K the full width at half maximum is as small as 28 meV, attesting a rather uniform size distribution. The carrier lifetimes are almost the same across the whole photoluminescence band, indicating the good isolation of quantum dots. Continuous-wave lasings are observed at room temperature from laser diodes made of these quantum dots."
}
@article{Monte2005194,
title = "Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3 μm",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "194 - 196",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000121",
author = "A.F.G. Monte and J.F.R. Cunha and M.A.P. Soler and S.W. Silva and A.A. Quivy and P.C. Morais",
keywords = "Quantum dots",
keywords = "Carrier transport",
keywords = "Thermal redistribution",
keywords = "Micro-photoluminescence",
abstract = "We report the results of spatially resolved micro-photoluminescence on self-organized InAs/GaAs quantum dots. Our results suggest that carrier thermal redistribution is linked to the effects of carrier migration in these quantum dots. The higher migration length was observed at 150 K, making the higher carrier redistribution between the energy levels."
}
@article{Frederick2005197,
title = "Near-infrared single photon sources employing site-selected InAs/InP quantum dot microcavities",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "197 - 199",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000133",
author = "S. Frederick and D. Dalacu and D. Poitras and G.C. Aers and P.J. Poole and J. Lefebvre and D. Chithrani and R.L. Williams",
keywords = "Quantum dots",
keywords = "Micro cavity",
keywords = "Photonic bandgap",
keywords = "Quantum cryptography",
abstract = "We discuss the design, fabrication and characterisation of optical microcavities suitable for application with single, site-selected InAs/InP quantum dots emitting around λ=1550 nm. The fabrication procedures that we employ allow high finesse cavities to be constructed around single quantum dots with a known nucleation site and ground state emission energy. Two types of cavity are explored: (i) pillar cavities in which the quantum dot can be located within the semiconductor spacer layer between two dielectric Bragg reflectors and (ii) photonic bandgap cavities employing textured InP membranes. For 1 μm diameter, SiO2/Ta2O5 pillar cavities we obtain cavity quality factors, Q, of 1500 and for membrane cavities, Q values of 850."
}
@article{DeGiorgi2005200,
title = "Photomodulated reflectance studies of quantum dot in MCLED structures: monitoring cavity-ground state exciton resonance",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "200 - 202",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000145",
author = "M. De Giorgi and G. Rainò and T. Todaro and M. De Vittorio and V. Tasco and A. Passaseo and R. Cingolani",
keywords = "Quantum dot",
keywords = "Microcavity and photomodulation spectroscopy",
abstract = "Self-assembled quantum dots emitting around 1.3 μm and embedded in a microcavity structure are analysed by photo-reflectance (PR) measurements performed at different temperatures. The temperature dependence of the PR spectra line-shape and amplitude allows us to determine the tuning condition of the quantum dot ground state transition with the cavity mode. We found that in our structure the perfect tuning is obtained around 250 K."
}
@article{Hwang2005203,
title = "Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "203 - 206",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000157",
author = "S.H. Hwang and J.C. Shin and J.D. Song and W.J. Choi and J.I. Lee and H. Han",
keywords = "Quantum dot",
keywords = "Infrared photodetector",
keywords = "Thermal treatment",
abstract = "Thermal treatment of In0.5Ga0.5As/GaAs quantum dot infrared photodetector (QDIP) structure has been carried out at 700 °C for 1 min with SiO2 capping layer. Thermal treatment of In0.5Ga0.5As/GaAs QDIP structure induced a blue-shift in its photoluminescence (PL) spectrum by a 50 meV with a reduction of its intensity. The blue-shift in PL spectrum and the reduction in PL intensity is thought to be due to the interdiffusion of In and Ga at the interfaces of quantum dots (QDs) and GaAs barriers. The fabricated QDIP with thermally treated structure showed a red-shift in its photocurrent spectrum by a 22 meV from the photocurrent peak of 200 meV for as-grown QDIP, as a consequence of the blue-shift of QD bandgap."
}
@article{Raimundo2005207,
title = "Self-assembled systems obtained by chemical and electrochemical techniques for photonic crystal fabrication",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "207 - 211",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000169",
author = "Daniel S. Raimundo and Adriana B. Stelet and Francisco J.R. Fernandez and Walter J. Salcedo",
keywords = "Self-assembling",
keywords = "Porous alumina",
keywords = "Polystyrene",
keywords = "Electrochemical",
keywords = "Chemical",
keywords = "Photonic crystal",
abstract = "The present work reports the formation of self-assembled systems by chemical and electrochemical techniques for photonic crystal structures fabrication. The chemical technique was used to the fabrication of self-assembled polystyrene micro-spheres structures. The influence of temperature setup and monodispersion concentration in the chemical self-assemble mechanism was studied. The electrochemical technique also was used to fabricate the self-assembled porous alumina structures. The influence of electrolyte type and anodic voltage in the electrochemical self-assemble process was studied. The self-assembled structures were analyzed to the possibility of application as photonic crystal structures"
}
@article{Raphael2005212,
title = "Stability issues in tunneling via quantum systems",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "212 - 215",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000170",
author = "Raphael and Tsu",
keywords = "Quantum devices",
keywords = "Density of states",
keywords = "Linewidths",
keywords = "Instability",
abstract = "Since the introduction of resonant tunneling via man-made quantum structures, there have been concerns regarding the possibility of intrinsic instability. Some of the issues were thought to be only associated with quantum devices. In my view, the most important thing is not due to quantum effects, rather, due to a drastic reduction in the number of electrons taking part in the process. Redundancy and robustness may be established using a radically different approach."
}
@article{Hanada2005216,
title = "Formation and evolution of strain-induced self-assembled dot",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "216 - 218",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000182",
author = "Takashi Hanada and Takafumi Yao",
keywords = "Self-assembled dot",
keywords = "Lattice misfit",
keywords = "Energetics",
keywords = "Diffusion length",
abstract = "Diffusion length of adatoms on surface during epitaxy is finite and strongly depends on growth temperature and growth rate. Formation and development process of InAs/GaAs(001) self-assembled dot is studied by minimizing strain plus surface energy of a dot, wetting layer, and substrate system within a finite area limited by the surface diffusion."
}
@article{Morelhão2005219,
title = "Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "219 - 222",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000194",
author = "S.L. Morelhão and L.H. Avanci and R. Freitas and A.A. Quivy",
keywords = "Quantum dots",
keywords = "X-ray diffraction",
keywords = "Optoelectronic devices",
keywords = "Nanomaterials",
abstract = "Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates."
}
@article{Sherliker2005223,
title = "Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "223 - 226",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.080",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000200",
author = "B. Sherliker and P. Harmer and M.P. Halsall and P. Buckle and P.J. Parbrook and T. Wang",
keywords = "Microphotoluminescence",
keywords = "Photocurrent studies",
keywords = "InGaN quantum dots",
abstract = "We report a microphotoluminescence and photocurrent study of individual InGaN quantum dots grown on GaN with surface densities of <1 dot/μm2. Two samples were grown using standard metal-organic vapour phase epitaxy and consist of 1 μm GaN buffer layer followed by an InGaN epilayer grown with nominal thicknesses of 1.0 and 1.5 nm. Uncapped samples were studied by AFM and it was found that both samples showed a low surface density of quantum dots with average diameter of 30 nm and average height of 5 nm. Macrophotoluminescence studies of capped samples show two overlapping bands, which we assign to emission from the InGaN quantum well and dots. Simple mesa devices were fabricated from the samples consisting of a top Schottky contact and an ohmic ring base contact. Sub-micron aperture arrays were then prepared lithographically by local thinning of the top contact. Micro-photoluminescence conducted through these apertures shows fine line spectra that occur with the expected frequency for the density of dots observed in AFM. The application of a bias shifts and broadens the fine line structure. The observed line-width dependence on bias is interpreted in terms of spectral diffusion caused by the varying carrier populations in the vicinity of the dots."
}
@article{Pettersson2005227,
title = "Photocurrent spectroscopy on self-assembled InAs quantum dots embedded in InP",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "227 - 230",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000212",
author = "H. Pettersson and L. Landin and Ying Fu and M. Kleverman and M. Borgström and W. Seifert and L. Samuelson",
keywords = "QDIP",
keywords = "Photocurrent spectroscopy",
keywords = "Exiton photoionization",
abstract = "In this work, we report on an overview of recent results from Fourier transform photocurrent (FTPC) measurements in the infrared spectral region on ensembles of self-assembled InAs quantum dots embedded in a matrix of InP. In interband PC, clear signals related to the dots are observed. Comparing the PC- and PL spectra, we observe that the fundamental transition is absent in the PC spectra, which we interpret in terms of Pauliblocking due to a filled electron ground state of the dots. Our results furthermore suggest that an Auger process is involved in forming the interband PC signal. In intersubband PC, peaks related to transitions from the dots' ground- and first excited states to the conduction band of the matrix are observed. Using a novel approach of combining FTPC with illumination from an additional external non-modulated light source, we have measured the spectral distribution of photoionization of excitons in quantum dots and found an exciton binding energy in good agreement with theoretical calculations."
}
@article{Duque2005231,
title = "Electron-hole transitions in self-assembled InAs/GaAs quantum dots: Effects of applied magnetic fields and hydrostatic pressure",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "231 - 233",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.04.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205001369",
author = "C.A. Duque and N. Porras-Montenegro and Z. Barticevic and M. Pacheco and L.E. Oliveira",
keywords = "71.35.Cc",
keywords = "71.35.Ji",
keywords = "71.55.Eq",
keywords = "78.66.Fd",
keywords = "Magnetic field",
keywords = "Self-assembled quantum dots",
keywords = "Hydrostatic pressure",
abstract = "A theoretical study of the effects of applied magnetic fields and hydrostatic pressure on the electron-hole transition energies in self-assembled InAs/GaAs quantum dots is presented. The effective-mass approximation and a model of a cylindrical-shaped quantum dot with in-plane parabolic potential have been used to describe the InAs/GaAs quantum dots. Present theoretical results are in quite good agreement with experimental measurements of the magnetic field and pressure dependence of the exciton transition energies in InAs/GaAs self-assembled quantum dots."
}
@article{Dantas2005234,
title = "Growth and characterisation of ZnO quantum dots in polyacrylamide",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "234 - 236",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000236",
author = "N.O. Dantas and A.F.G. Monte and W.A. Cardoso and A.G. Brito-Madurro and J.M. Madurro and P.C. Morais",
keywords = "ZnO",
keywords = "Nanocrystals",
keywords = "Polyacrylamide",
keywords = "Quantum dots",
keywords = "Optical properties",
abstract = "ZnO nanocrystals were successfully fabricated by wet-chemical method. Optical properties of excitons confined in ZnO nanocrystals were studied by measuring both optical absorption and photoluminescence spectra. Absorption due to free excitons was clearly observed whereas strong PL lines were recorded in the UV region at around the exciton absorption energy. Red-shift of optical features with increasing annealing time indicates an increase in quantum dot size."
}
@article{Andreev2005237,
title = "Blue emitting self-assembled nano-crystals of para-sexiphenyl grown by hot wall epitaxy",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "237 - 240",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000224",
author = "A. Andreev and F. Quochi and H. Sitter and H. Hoppe and S. Sariciftci and A. Mura and G. Bongiovanni",
keywords = "Self assembling nanostructures",
keywords = "Para-sexiphenyl",
keywords = "Lasing",
abstract = "In this work we report about photoluminescence investigations and the first observation of lasing in highly ordered, crystalline para-sexiphenyl (PSP) films grown by hot wall epitaxy on mica substrates. We demonstrate also the fabrication of hot wall epitaxially grown PSP layers for blue light emitting diodes. The electroluminescence (EL) shows two peaks at 425 and 450 nm, which coincide with the corresponding photoluminescence spectra. The electric field required for the onset of the EL in our single layer devices is comparable with that for optimized multilayer devices based on PSP."
}
@article{Alcalde2005241,
title = "Spin relaxation due to the phonon modulation of the spin–orbit interaction in quantum dots",
journal = "Microelectronics Journal",
volume = "36",
number = "3–6",
pages = "241 - 243",
year = "2005",
note = "Low Dimensional Structures and Devices Conference LDSD2004 conference",
issn = "0026-2692",
doi = "10.1016/j.mejo.2005.02.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269205000248",
author = "A.M. Alcalde and O.O. Diniz Neto and G.E. Marques",
keywords = "Spin relaxation",
keywords = "Quantum dots",
keywords = "Piezoelectric coupling",
keywords = "Spin-orbit coupling",
keywords = "Scattering by phonons",
keywords = "Electronic structure of nanoscale materials",
abstract = "We calculate the spin relaxation rates in InAs parabolic quantum dots due to the spin interaction with acoustical phonons. The electron–phonon deformation potential and piezoelectric interaction are described by means of the Pavlov–Firsov spin–phonon Hamiltonian. Our results demonstrate that for narrow gap materials the deformation potential interaction becomes dominant. This behavior is not observed in wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the relaxation processes. We also show that the spin relaxation rates are particularly sensitive to the value of the Landè g-factor, which depends strongly on the confinement."
}
@article{tagkey2005co2,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "co2 - ",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00183-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001831",
key = "tagkey2005co2"
}
@article{Beji200599,
title = "Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "99 - 103",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001739",
author = "L. Beji and L. Bouzaïene and B. Ismaïl and L. Sfaxi and H. Maaref and H. Ben Ouada",
keywords = "Porous GaAs",
keywords = "Anodization",
keywords = "InAs",
keywords = "QDs",
keywords = "MBE",
keywords = "Photoluminescence",
abstract = "In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaAs substrate, growth interruption and depositing 10 atomic monolayer (ML) In0.4Ga0.6As on InAs QDs, photoluminescence measured at 10 K exhibits an emission at 0.739 eV (∼1.67 μm) with an ultranarrow full width at half maximum (FWHM) of 16 meV. This emission represents the longer wavelength obtained up to date to our knowledge and has been attributed to the radiative transition in the InAs QDs."
}
@article{Buwen2005105,
title = "Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "105 - 108",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001703",
author = "Xiao Buwen and Shang Yafeng and Meng Meng and Li Chuannan",
keywords = "Organic light-emitting diode (OLED)",
keywords = "Anode modification",
keywords = "Ag2O",
abstract = "The interface between the organic layer and the Indium Tin Oxide (ITO) layer of an organic light-emitting diode (OLED) is crucial to the performance of the device. An ultra-thin Ag2O film, used as an anode modification layer, has been employed on ITO surface through the UV-ozone treatment of Ag films. The insertion of this thin film with higher work function enhances the hole injection in the organic light-emitting diode and improves the performance of the devices effectively. The maximum electroluminescence (EL) efficiency of the device with the Ag2O film is 4.95 cd/A, it is about 60% higher than that of the device without it."
}
@article{Zhong2005109,
title = "Effects of thermally induced optical fiber shifts in V-groove arrays for optical MEMS",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "109 - 113",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001715",
author = "Z.W. Zhong and S.C. Lim and A. Asundi",
keywords = "Optical MEMS",
keywords = "Optical fiber shifts",
keywords = "Optical coupling loss",
keywords = "Epoxy adhesive",
keywords = "Silicon substrate",
keywords = "V-groove array",
abstract = "Thermally induced optical fiber shifts in the joints consisting of an optical fiber, epoxy adhesive and silicon substrate were simulated using a FEA (finite element analysis) package. Experiments using a real-time micro-moiré system were also performed at temperatures of 25, 40, 60, 85 and 100 °C for confirmation of the FEA results. The optical coupling loss, caused by the fiber shifts, of a single-mode fiber to fiber and a laser diode to a fiber was studied. The results revealed that thermally induced fiber shifts increased with the number of V-groove channels. The optical coupling loss is the greatest during thermal loading for the outer fiber in the four channels V-groove array. Optical losses of 0.334 and 0.346 dB for fiber-to-fiber coupling and 1.54 and 1.56 dB for laser diode to fiber coupling were calculated using the fiber shift values obtained from the FEA and experiments, respectively, for the outermost fiber joint in the four channels V-groove array at 100 °C. The effects of fiber shifts especially the shift of the fiber that is positioned at the outermost V-groove in the array cannot be ignored."
}
@article{A2005115,
title = "Modelling of perimeter recombination in GaAs solar cells",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "115 - 124",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001648",
author = "A. and Belghachi",
keywords = "Solar cell",
keywords = "Perimeter current",
keywords = "Surface recombination",
keywords = "Dark current",
abstract = "To investigate perimeter recombination current in heteroface GaAs solar cells, two models were proposed; the first concerned the analysis of recombination at the surface that intersects the space-charge layer and the second dealt with recombination at the quasi-neutral region. Recombination at the depleted layer surface has a 2kT character and was treated in a similar way to that of the bulk, using the model of Sah, Noyce and Shockley. The electric field at the surface due to Fermi level pinning is different from that of the bulk. We suggested a simple model to obtain an analytical form of the perimeter current at the space-charge region surface that yielded values of the product of the characteristic length by the surface recombination velocity (LsS0) that agreed well with experimental values. The recombination current outside the space-region is of two dimensional nature and has a kT behaviour, the model adopted consisted mainly of solving numerically the bidimensional continuity equation. An effective recombination velocity was introduced to account for bend bending caused by the charged surface states. As the ratio of perimeter to area (P/A) is increased the perimeter current acquired significant proportions, thus the expected 2kT current due to bulk deep levels existing in the depletion layer is two to three orders of magnitude too small to account for."
}
@article{He2005125,
title = "Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "125 - 128",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001673",
author = "Yong-ning He and Jing-wen Zhang and Xiao-dong Yang and Qing-an Xu and Xing-hui Liu and Chang-chun Zhu and Xun Hou",
keywords = "MgZnO alloy thin film",
keywords = "ZnO thin film",
keywords = "L-MBE",
keywords = "Ceramic target",
abstract = "The high purity ZnO ceramic target and the (MgO)0.1(ZnO)0.9 target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1−xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1−xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the MgxZn1−xO alloy film. The Mg content x in the MgxZn1−xO alloy film was determined to be 0.18."
}
@article{Yam2005129,
title = "Innovative advances in LED technology",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "129 - 137",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.11.008",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400165X",
author = "F.K. Yam and Z. Hassan",
keywords = "III–V semiconductors",
keywords = "High brightness LEDs",
keywords = "White LEDs",
abstract = "An overview of the rapid progress in the developments of the inorganic light emitting diode (LED) technology is presented. Innovative structures and designs of the device have led to dramatic improvements of the performance in LED technology, groundbreaking performance records are being reported constantly. This article summaries the recent progress of the high brightness LEDs, and describes the LED structures from the basic pn homojunction, to heterojunction, and eventually the use of nano-scale low-dimensional structures in the device fabrication. Some of the novel structures and designs of the most recent developed high brightness LEDs, as well as the conventional and innovative ways of producing white LEDs are briefly discussed."
}
@article{Chiţu2005139,
title = "An FPGA implementation of the AES-Rijndael in OCB/ECB modes of operation",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "139 - 146",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001636",
author = "Cristian Chiţu and Manfred Glesner",
keywords = "AES",
keywords = "Rijndael",
keywords = "FPGA",
keywords = "Encryption",
keywords = "Decryption",
abstract = "Implementation in one FPGA of the AES-Rijndael in Offset Codebook (OCB) and Electronic Codebook (ECB) modes of operation was developed and experimentally tested using the Insight Development Kit board, based on Xilinx Virtex II XC2V1000-4 device. The circuit was designed to provide simultaneous data privacy and authenticity in applications which require small area such as wireless LANs, cellular phones, and smart cards. The experimental clock frequency was equal to 50 MHz and translates to the throughputs of 493 Mbit/s for block size and key size of 128 bits, respectively. The circuit combines the efficiency of OCB authentication with the high security of Rijndael encryption/decryption algorithms, offering an authenticated encryption/decryption scheme."
}
@article{WenTsong2005147,
title = "Power/area/delay aware FSM synthesis and optimization",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "147 - 162",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.009",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400151X",
author = "Wen-Tsong and Shiue",
keywords = "Finite state machine (FSM) synthesis and optimization",
keywords = "State assignment",
keywords = "State minimization",
keywords = "Low power design",
keywords = "Sequential circuit design",
keywords = "Heuristic algorithm",
keywords = "Integer linear programming (ILP)",
abstract = "In this paper, we present novel state minimization and state assignment techniques to synthesize Finite State Machines (FSMs) including novel state minimization and state assignment to optimize power, area, and delay in designing sequential circuits for future low power system application such as cell phones, PDAs, etc. The goal is to reduce the number of gates and literals relevant to power and area, and furthermore to shorten the critical-path delay in FSM simultaneously. In the first step, we try to target the optimal solution for state minimization in efficiency by applying (i) the technique of binary-tree algorithm, heuristic algorithm (or ILP model) to determine the minimized groups covering all state variables where these groups are allocated at different Riversides (here, Shiue's River is introduced for readers to understand easily), (ii) the technique of edge-identification algorithm to determine the edges and impossible edges, which help targeting the solution at lower bound, (iii) Boolean Expression Effects due to alternative ways of minimized states, such that the required number of flip-flops is minimum for completely (or incompletely) specified state tables. Next, our novel state assignment techniques consisting of (i) edge-covering algorithm, (ii) block-reordering algorithm, (iii) cost calculation, (iv) ping-pong gray-codes assignment, and (iv) design space exploration, are developed to target the best state assignment. Espresso is then run to determine the Boolean expressions and choose the best state assignment with the minimal sum-of-product (SOP) terms and literals. Finally, the performance metrics in power, area, and delay are calculated based on the developed cell libraries for those optimal solutions having the same number of terms and literals. Our solutions provide engineers and designers to choose the best state assignment having less power, area, and delay to meet their system specification. Our experiments show that our approach results in quarter reduction (≈25%) in power, area, and delay, respectively, for FSM MCNC benchmarks."
}
@article{Zervas2005163,
title = "Behavioral-level event-driven power management for DECT digital receivers",
journal = "Microelectronics Journal",
volume = "36",
number = "2",
pages = "163 - 172",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001508",
author = "N.D. Zervas and G. Theodoridis and D. Soudris",
keywords = "Behavioral power management",
keywords = "Low-power design",
keywords = "Power estimation",
keywords = "Shut-down techniques",
keywords = "Digital receivers",
abstract = "Power management is a low-power design technique applicable in almost all design levels. Here, the idea of exploiting events to trigger the shut-down of hardware resources is applied at the behavioral-level of a DECT digital receiver design. Power management involves a trade-off between the power savings arising from the power-down (or shut-down) parts of the system and the power increase due to the additional logic for the generation of the shutdown signals. For that purpose, taking into account the digital receiver's characteristics, a behavioral-level power management technique is introduced. The efficiency of the proposed technique is proven by its application on an industrial DECT receiver, where a power saving of 50% in terms of the dynamic power consumption is achieved."
}
@article{tagkey2005IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "IFC - ",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00176-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001764",
key = "tagkey2005IFC"
}
@article{Zardas20051,
title = "Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiation",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "1 - 4",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001466",
author = "G.E. Zardas and P.H. Yannakopoulos and M. Ziska and Chrys. Symeonides and P.C. Euthymiou and O. Csabay",
keywords = "A. Semiconductors",
keywords = "D. Photoconductivity",
keywords = "D. Recombination and trapping",
keywords = "E. Photoelectron spectroscopy",
abstract = "We investigated the photoconductivity of GaAs:Si epilayer on SI-GaAs specimens. We measured the current from the time we switched on the illumination and after switching it off as a function of time at various temperatures from 250 to 330 K. A small persistent photoconductivity starts to appear from 250 K. At 330 K a clear positive persistent photoconductivity (PPPC) appears. The persistent photoconductivity increases with temperature.
Then the specimens were irradiated with α-particles from an Am241 source at 330 K.
A change in persistent photoconductivity is observed from the dose of 6×1012 particles/cm2. At higher doses not only the current increases, but also the PPC duration. We try to explain these phenomena on the base of the existing theoretical models."
}
@article{EM20055,
title = "Approximate process-parameter-dependent study of the logarithmic domain lossy integrator harmonic distortion levels",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "5 - 23",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001417",
author = "E.M. and Drakakis",
keywords = "Log-domain filtering",
abstract = "This paper estimates approximately and sheds light in an insightful way upon the impact of the basic bipolar process parameters upon harmonic distortion for the log-domain lossy integrator case. A step-by-step, symbolic, transistor-level distortion calculation is elaborated. The determination of the harmonic distortion levels present at the integrator's output is based upon the exploitation on the medium complexity Charge-Control-Model (CCM) for the Bipolar Junction Transistor (BJT). Results correlating the input signal strength with the impact of basic BJT non-idealities (e.g. finite beta values, parasitic base and emitter resistances) upon the output linearity levels are provided."
}
@article{Choi200525,
title = "Effects of extended dislocations on charge distribution in GaN epilayer",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "25 - 28",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001442",
author = "H. Choi and Eui Kwan Koh and Yong Min Cho and Junggeun Jin and Dongjin Byun and M. Yoon",
keywords = "AFM",
keywords = "SSPM",
keywords = "GaN",
keywords = "Dislocation",
abstract = "We have investigated the effect of extended dislocations (0.5–3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04–0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation."
}
@article{Zhan200529,
title = "Dielectric breakdown characteristics and interface trapping of hafnium oxide films",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "29 - 33",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001430",
author = "N. Zhan and M.C. Poon and Hei Wong and K.L. Ng and C.W. Kok",
abstract = "The reliability and integrity of HfO2 prepared by direct sputtering of hafnium were studied. By monitoring the current-voltage and current-stressing duration characteristics, we found a significant charge trapping effect in thin film with very short stressing time (<30 s) but the stress-induced trap generation is insignificant. The breakdown characteristics of hafnium gate oxide were also investigated in detail. We found that several soft breakdowns take place before a hard breakdown. Area and stress-voltage effects of the time-dependent dielectric breakdown were observed. Results suggest that the soft and hard breakdowns should have different precursor defects. A two-layer breakdown model of is proposed to explain these observations."
}
@article{Kuo200535,
title = "Analysis of the effects of reflectance and refraction generated by wafers made from fused silica, ALOxNy and TiSixNy under different light sources on pattern length and best focus",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "35 - 39",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001454",
author = "Yang-Kuao Kuo and Chuen-Guang Chao",
keywords = "Deep UV",
keywords = "Refraction",
keywords = "Reflectance",
abstract = "In semi-conductor photo-lithography processing, line-width is constantly shrinking. That is why process window requirements are becoming stricter. Under these strict conditions, the influences of focus and pattern length are more important. This investigation tries to explore the deviation of best focus and the variation in pattern length resulting from the reflectance and refraction of fused silica, ALOxNy and TiSixNy wafers are coated with the same thickness of SEPR 432 PR (Photo Resist). Experimental results indicate that after excluding the influence of photo resist impacts, the refraction generated by the auto focus light source(halogens lamp) causes deviation of the best focus, and the extent of deviation has a directly proportion relationship with refraction, and no direct relationship exists between exposure light source (laser) and the deviation of best focus. The reflectance generated by exposure light source only changes the measures of pattern length, and an inverse relationship exists between reflectance and pattern length; that is, received pattern length reduces with increasing wafer reflectance."
}
@article{Kim200541,
title = "Electrical properties of vacuum annealed La2O3 thin films grown by E-beam evaporation",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "41 - 49",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001429",
author = "Yongshik Kim and Kunihiro Miyauchi and Shun-ichiro Ohmi and Kazuo Tsutsui and Hiroshi Iwai",
keywords = "High-k",
keywords = "Rare earth oxide",
keywords = "La2O3",
keywords = "Vacuum annealing",
keywords = "Poole–Frenkel conduction",
keywords = "Space-charge-limited conduction",
abstract = "In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La2O3) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300–500 °C) in ultra-high vacuum (10−10–10−9 Torr) for 90 min. From the measurement of spectroscopic ellipsometry, it is found that film thickness is increased with annealing temperature, which would be cause of flat-band voltage shift (ΔVFB) due to the growth of interfacial layer. From the capacitance measurement, it is found that ΔVFB of the film is reduced by post-deposition anneal (PDA) compared to that of as-deposited film, but increase again at high temperature annealing, especially in the case of thin film (3.5 nm). From the applied voltage and temperature dependence of the leakage current of the film, with different gate electrode materials (Ag, Al, and Pt), it is shown that the leakage currents are associated with ohmic and Poole–Frenkel (P–F) conductions when flat-band voltage (VFB) is less than zero, and ohmic and Space-Charge-Limited Current (SCLC) conductions when VFB is greater than zero. The dielectric constants obtained from P–F conduction for Al gate electrode case is found to be 11.6, which is consistent with the C–V result 11.9. Barrier height of trap potential well is found to be 0.24 eV from P–F conduction. Based on SCLC theory, leakage currents of 3.5 and 11 nm films with different PDA temperatures are explained in terms of oxide trap density."
}
@article{Alves200551,
title = "Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "51 - 54",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001399",
author = "M.A.R. Alves and D.F. Takeuti and E.S. Braga",
keywords = "Silicon tip arrays",
keywords = "Wet etching",
keywords = "Plasma etching",
keywords = "Thermal oxidation",
abstract = "We developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF6 plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening."
}
@article{Fang200555,
title = "Nanomechanical characterization of polymer using atomic force microscopy and nanoindentation",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "55 - 59",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001387",
author = "Te-Hua Fang and Win-Jin Chang and Sung-Lin Tsai",
keywords = "Hardness",
keywords = "Nanotribology",
keywords = "Atomic force microscopy",
keywords = "Nanoindentation",
keywords = "Polymer",
abstract = "The nanomechanical characteristics of polycarbonate (PC) polymer were investigated by atomic force microscope (AFM) and nanoindentation. Scratching, wear properties, hardness and Young's modulus were obtained. The relationships between scribing feed and speed, surface depth and roughness and applied load were also investigated. The results indicated that as the applied load was increased, the furrow depth and the surface roughness increased. When the scribing feed was increased, the depth and roughness decreased. Increasing the furrow speed also decreased the surface roughness. The applied load is more significant than the scribing speed on the material removal rate. In addition, the Young's modulus and hardness of the polycarbonate material were 1.8 and 0.2 GPa, respectively."
}
@article{You200561,
title = "Full-band Monte Carlo simulation of thin InP p+–i–n+ diodes",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "61 - 65",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001405",
author = "A.H. You and D.S. Ong",
keywords = "InP",
keywords = "Avalanche photodiodes",
keywords = "Mean multiplication",
keywords = "Excess noise factor",
keywords = "Dead-space",
abstract = "A full-band Monte Carlo (FBMC) model is developed to simulate the avalanche characteristics of thin InP p+–i–n+ diode. The realistic energy band structure of InP used in this model is generated from the local empirical pseudopotential method. The electron and hole ionisation coefficients are fitted to the available measurement in the wide range of electric fields with a softer threshold than the Keldysh model. The multiplication gain and excess noise factor of electron-and hole-initiated multiplication in the thin InP p+–i–n+ diodes were simulated using FBMC model. Our FBMC results are compared to a simple random path length (RPL) model. The FBMC model predicted lower noise as compare to the results simulated from RPL model in thin InP p+–i–n+ diodes."
}
@article{Avci200567,
title = "A novel compact circuit for 4-PAM energy-efficient high speed interconnect data transmission and reception",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "67 - 75",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001478",
author = "Uygar Avci and Sandip Tiwari",
keywords = "Multi-valued logic",
keywords = "Pulse amplitude modulation",
keywords = "Back-gate bias",
keywords = "Fully depleted SOI",
keywords = "Low power",
keywords = "Global interconnect delay",
keywords = "Circuit optimization",
abstract = "Transmission of signals, whether on-chip or off-chip, places severe constraints on timing and extracts a large price in energy. New silicon device technologies, such as back-plane CMOS, provide a programmable and adaptable threshold voltage as an additional tool that can be used for low power design. We show that one particularly desirable use of this freedom is energy-efficient high-speed transmission across long interconnects using multi-valued encoding. Our multi-valued CMOS circuits take advantage of the threshold voltage control of the transistors, by using the signal-voltage-to-threshold-voltage span, in order to make area-efficient implementations of 4-PAM (pulse amplitude modulation) transceivers operating at high speed. In a comparison of a variety of published technologies, for signal transmission with interconnects of 10–15 mm length, we show up to 50% improvement in energy for on-chip signal transmission over binary encoding together with higher limits for operating speeds without a penalty in circuit noise margin."
}
@article{Méndez200577,
title = "An investigation on the relation between digital circuitry characteristics and power supply noise spectrum in mixed-signal CMOS integrated circuits",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "77 - 84",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400148X",
author = "Miguel A. Méndez and José Luis González and Diego Mateo and Antonio Rubio",
keywords = "Digital noise power spectrum",
keywords = "dI/dt noise",
keywords = "Switching noise",
abstract = "Digital power supply noise is a key issue in the design of mixed-signal and radio frequency (RF) integrated circuits (IC). In this paper, we have evaluated the impact of different digital design alternatives and technological parameters on the noise power spectral density. Related rules guiding designers to minimise the effect of digital noise on the analogue RF section conclude the work."
}
@article{KT200585,
title = "Electrical overstress due to ESD induced displacement currents",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "85 - 90",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001491",
author = "K.T. and Kaschani",
keywords = "Electrostatic discharge",
keywords = "ESD",
keywords = "Electrical overstress",
keywords = "EOS",
keywords = "Displacement current",
abstract = "In this paper a new failure mode is introduced, which is related to the large dV/dt of ESD pulses. It was observed after +4 kV HBM stress for a 90V-BCD technology device and resulted in a gate oxide defect of a low voltage PMOS transistor, which was hidden deeper in the IC's circuitry. The underlying failure mechanisms are discussed based on experimental and simulational findings and measures for early identification and protection of potentially sensible devices are proposed."
}
@article{Wang200591,
title = "Fabrication of 128×128 element optical switch array by micromachining technology",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "91 - 95",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.024",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001004",
author = "S.B. Wang and S.B. Zhou and G. Huang and B.F. Xiong and S.H. Chen and X.J. Yi",
keywords = "Vanadium oxide thin films",
keywords = "Ion beam sputtering",
keywords = "Temperature coefficient of resistance",
keywords = "Photolithography",
keywords = "128×128 Element",
keywords = "Infrared optical switch array",
abstract = "Polycrystalline VO2 thin films were obtained on Si substrates by ion beam sputtering deposition and annealing in flowing Ar gas. SEM images indicate that VO2 thin films were grown into compact surfaces. Four-probe measurements indicated that the VO2 thin films own good electrical homogeneity. After the films' production, micromachining technology including lithography, reaction ion etching and metallization connection processes was used to produce the optical switch array. As a result, the 128×128 element optical switch array was achieved."
}
@article{Tong200597,
title = "Corrigendum to: Design and analysis of planar printed microwave and PBG filters using an FDTD method",
journal = "Microelectronics Journal",
volume = "36",
number = "1",
pages = "97 - ",
year = "2005",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001363",
author = "Ming-Sze Tong and Yilong Lu and Yinchao Chen and Mingwu Yang and Qunsheng Cao and Viktor Krozer and Rudiger Vahldieck"
}
@article{tagkey2004IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "IFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00153-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001533",
key = "tagkey2004IFC"
}
@article{Ruiz2004939,
title = "An area-efficient static CMOS carry-select adder based on a compact carry look-ahead unit",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "939 - 944",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001375",
author = "G.A. Ruiz and M. Granda",
keywords = "Addition",
keywords = "Carry-select adder",
keywords = "Carry-look ahead",
keywords = "Computer arithmetic circuits",
abstract = "This paper presents a highly area-efficient CMOS carry-select adder (CSA) with a regular and iterative-shared transistor structure very suitable for implementation in VLSI. This adder is based on both a static and compact multi-output carry look-ahead (CLA) circuit and a very simple select circuit. Comparisons with other representative 32-bit CSAs show that the proposed adder reduces the area by between 25 and 16%, the number of transistors by between 43 and 30%, and the dynamic power supply between 35 and 16%, while maintaining a high speed."
}
@article{Djordjevic2004945,
title = "Approach to partially self-checking combinational circuits design",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "945 - 952",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.007",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400117X",
author = "Goran Lj Djordjevic and Mile K. Stojcev and Tatjana R. Stankovic",
keywords = "Fault tolerance",
keywords = "Concurrent error detection",
keywords = "Partially self-checking circuits",
keywords = "Approximation of logic functions",
abstract = "This paper presents a cost-effective, non-intrusive technique of partially self-checking combinational circuits design. The proposed technique is similar to duplication with comparison, wherein duplicated function module and comparator act as a function checker that detects any erroneous response of the original function module. However, instead of realizing checker with full error-detection capability, we select a subset of erroneous responses to implement partial, but simplified function checker. A heuristic procedure that tries to find the optimal sum-of-product expression for partial function checker that minimizes its area while providing specified error coverage is described here. Effectiveness of the technique is evaluated on a set of MCNC 91 benchmark combinational circuits."
}
@article{LeonardR2004953,
title = "Designing CMOS data cells for space systems",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "953 - 967",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001156",
author = "Leonard R. and Rockett",
keywords = "Complementary metal oxide semiconductor",
keywords = "Single-event upset",
keywords = "Linear energy transfer",
abstract = "The increasing miniaturization of advanced microelectronics drives the magnitude of charge representing information within a circuit to increasingly smaller levels, raising the susceptibility of its corruption by spurious signals. Noise spikes caused by the stochastic collision of energetic single particles with charge-sensitive regions at the semiconductor surface can destroy stored information, leading to logic errors. Error-producing single particles for highly advanced microcircuits are omnipresent, emanating from a variety of sources, from an alpha particle emitted from the metal layers forming the interconnect grid on the circuit to galactic high energy heavy ions encountered by the microelectronics within satellite systems. No matter the source of the ions, the resulting excess charge collection dynamics that may lead to logic errors are in all cases essentially the same. That is, if the interaction of an ion with the semiconductor substrate occurs in close proximity to the data node of a latch circuit, the resultant excess ionization charge collected at the data node may cause the latch to erroneously change state, a single-event upset (SEU). The information now contaminated by this invalid data state is in some cases unrecoverable. Consequently, a considerable amount of effort is spent during the circuit library design and development phases to minimize the probability of occurrence of SEUs.
Complementary metal oxide semiconductor (CMOS) technologies are predominantly used to build the most advanced high-performance, low-power digital systems and quite a number of SEU hardening design techniques have been developed to mitigate the threat of logic upset due to energetic particles. This paper will describe in much greater detail the threat posed to the information stored in CMOS data latches by energetic ion strikes. Some of the most commonly used design-hardening approaches will be examined and the relative merits of each approach will be explored."
}
@article{Mei2004969,
title = "Fabrication of strained Si channel PMOSFET on thin relaxed Si1−xGex virtual substrate",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "969 - 971",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001132",
author = "Ding-Lei Mei and Jing-chun Li and Jing Zhang and Wan-jing Xu and Kai-zhou Tan and Mo-hua Yang",
keywords = "SiGe",
keywords = "Low-temperature (LT) Si",
keywords = "Strain relaxation",
keywords = "Threading dislocation",
abstract = "A novel MBE-grown method using low-temperature Si technology is introduced into the fabrication of strained Si channel PMOSFETs. The thickness of relaxed Si1−xGex epitaxy layer on bulk silicon is reduced to approximate 400 nm (x=0.2). The Ge fraction and relaxation of Si1−xGex film are confirmed by DCXRD (double crystal X-ray diffraction) and the DC characteristics of strined Si channel PMOSFET measured by HP 4155B indicate that hole mobility μp has an maximum enhancement of 25% compared to similarly processed bulk Si PMOSFET."
}
@article{Han2004973,
title = "Optimization of sub-0.1-μm offset Γ-shaped gate MHEMTs for millimeter-wave applications",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "973 - 983",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001120",
author = "Min Han and Myung-Sik Son and Jung-Hun Oh and Bok-Hyung Lee and Mi-Ra Kim and Sam-Dong Kim and Jin-Koo Rhee",
keywords = "84",
keywords = "84.40.−x",
keywords = "84.40.Lj",
keywords = "85",
keywords = "85.30.De",
keywords = "85.30.Tv",
keywords = "Metamorphic HEMT (MHEMT)",
keywords = "InGaAs",
keywords = "InAlAs",
keywords = "GaAs-based HEMT",
keywords = "Transconductance",
keywords = "Cut-off frequency",
keywords = "Maximum frequency of oscillation",
keywords = "Millimeter-wave frequency",
abstract = "We examine the effects of device scaling in both vertical and lateral dimensions for the metamorphic high electron mobility transistors (MHEMTs) on the DC and millimeter-wave electrical performances by using a hydrodynamic transport model. The well-calibrated hydrodynamic simulation for the sub-0.1-μm offset Γ-gate In0.53Ga0.47As/In0.52Al0.48As MHEMTs shows a reasonable agreement with the electrical characteristics measured from the fabricated 0.1 μm devices. We have calibrated all the parameters using the measurement data with various physical considerations to take into account the sophisticated carrier transport physics in sub-0.1-μm devices. Being simulated with these calibrated parameters, the optimum device performance is obtained at a source-drain spacing of 2 μm, a gate length of 0.05 μm, a barrier thickness of 10 nm and a channel thickness of 12 nm."
}
@article{Chen2004985,
title = "Spin-on-glass (SOG) process-induced tungsten residue in a semiconductor manufacturing procedure",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "985 - 987",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.021",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000990",
author = "Ping Hsun Chen and Tate Chen and Han Chang Shih",
keywords = "Spin-on-glass (SOG)",
keywords = "Defect",
keywords = "Inter-metal dielectric (IMD)",
keywords = "Tungsten",
abstract = "In this article, a case of Spin-on-Glass (SOG) process-induced tungsten residue was reported. The case was found after the tungsten etchback process of filling vias. A possible failure mechanism was proposed. Based on the review of our process flow, it is believed that the tungsten residue might result from the hydrodynamic effects of SOG."
}
@article{Gonc ̧alvesGuimarães2004989,
title = "Design of a single-electron current source for nanoelectronic devices",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "989 - 996",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000813",
author = "Janaina Gonc ̧alves Guimarães and José Camargo da Costa",
keywords = "Single-electron pump",
keywords = "Current source design",
keywords = "Room temperature",
abstract = "A design methodology of current sources for nanoelectronic devices is presented here for the first time. These current sources are based upon single-electron pump structures. An analytical description of the current expression is carried out. Furthermore, low temperature and room temperature applications are demonstrated."
}
@article{tagkey2004III,
title = "Contents of Vol. 35",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "III - XI",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00161-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001612",
key = "tagkey2004III"
}
@article{tagkey2004XIII,
title = "Author index",
journal = "Microelectronics Journal",
volume = "35",
number = "12",
pages = "XIII - XVI",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00162-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001624",
key = "tagkey2004XIII"
}
@article{tagkey2004IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "IFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00130-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001302",
key = "tagkey2004IFC"
}
@article{Avedillo2004869,
title = "Pass-transistor based implementations of threshold logic gates for WOS filtering",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "869 - 873",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001168",
author = "María J. Avedillo and José M. Quintana and Raúl Jiménez-Naharro",
keywords = "Threshold gate",
keywords = "Pass transistor logic",
keywords = "Non-linear filters",
abstract = "This paper presents a systematic procedure to implement threshold functions by using a pass-transistor network. A main feature of the threshold gates (TGs) produced by this technique is that they do not exhibit the fan-in limitations usual when other implementation techniques are used. Thus, they are especially useful for Weighted Order Statistical (WOS) filters because the binary filters required are threshold functions which usually present a high total sum of weights. A WOS filter with its binary filters implemented as pass-transistor TGs is demonstrated in an standard 0.35 μm CMOS technology at 3.3 V. The filter shows a sample frequency well over 100 MHz at the nominal process condition and it is cheaper, faster and consumes less power than a conventional approach."
}
@article{Rebey2004875,
title = "Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "875 - 880",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001193",
author = "A. Rebey and Z. Chine and W. Fathallah and B. El Jani and E. Goovaerts and S. Laugt",
keywords = "C-doped GaAs",
keywords = "Compensation",
keywords = "MOVPE",
abstract = "Heavily C-doped GaAs epilayers have been grown by atmospheric pressure metalorganic vapor phase epitaxy with hole concentration ranging from 2×1019 to 1.6×1020 cm−3. In order to study the stability of C acceptors over this range, the films have been annealed at 810 °C for 10 min under two mixture gas AsH3+H2 or only N2. Annealing of the layers resulted in a decrease in carrier concentration, carrier mobility and lattice mismatch with undoped GaAs. The lattice matching conditions of C-doped GaAs layers were systematically investigated by using X-ray high-resolution diffraction space mapping. The comparison between electrical and structural before and after annealing of layers properties indicates that the simultaneous decrease of carrier concentrations, Hall mobility and mismatch is probably related to an increase of compensation. Basing on a theoretical calculation of mobility as a function of hole concentration and Vegard's law, we estimate that the compensation comes from the formation of (C–C)+[100] interstitial couples. This fact does not exclude definitively the possibility of the formation of other species such as H–CAs especially for hole concentration lower than 5×1019 cm−3. An annealing under AsH3+H2 ameliorates the crystalline properties contrarily to an annealing under N2. The optical properties have been investigated using Raman spectroscopy. Two main Raman features are observed before and after annealing of the layers: the longitudinal-optic (LO) phonon mode and the coupled plasmon-LO phonon (LOPC). As for as grown layers, the intensity ratio ILOPC/ILO between the intensity of LOPC peak and the LO peak increases by increasing the hole concentration. This ratio is about 1 after an annealing of layers under AsH3+H2. An unusual change of ILOPC/ILO ratio is observed in samples annealed under N2. Indeed, for high doping (∼1020 cm−3) the ratio ILOPC/ILO<1 and for relatively low doping (∼2×1019 cm−3) the ratio ILOPC/ILO>1. This behaviour is probably related to the high sensibility of Raman measurement not only to the hole concentration change but also to the surface quality."
}
@article{Kafantaris2004881,
title = "Implementation of non-linear filters using nanoelectronic single-electron circuitry",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "881 - 889",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.08.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001181",
author = "D. Kafantaris and I. Karafyllidis and I. Andreadis",
keywords = "Nanoelectronics",
keywords = "Single-electron circuits",
keywords = "Non-linear filters",
keywords = "Image processing",
abstract = "Non-linear filters are large family of filters used in signal and image processing. They have found numerous applications such as in digital image restoration, speech processing and coding, digital TV applications, etc. In this paper, two binary non-linear filters, the three-point median filter and the 2×2-pixel morphological opening filter are designed using nanoelectronic single-electron circuitry. In single-electron circuits bits of information are represented by the presence or absence of single electrons at conducting islands. The two nanoelectronic filters are simulated using a Monte Carlo technique and their correct and stable logical operation is confirmed."
}
@article{Chaaben2004891,
title = "Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "891 - 895",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.009",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400120X",
author = "N. Chaaben and T. Boufaden and M. Christophersen and B. El Jani",
keywords = "GaN",
keywords = "AlN buffer",
keywords = "Porous silicon",
keywords = "SEM",
keywords = "Photoluminescence",
abstract = "GaN was grown on porous silicon (PS) substrates by Metalorganic Vapour Phase Epitaxy at temperature of 1050 °C. An additional AlN buffer layer is used between GaN and PS. The crystalline quality and surface morphology of GaN films were studied by X-ray diffraction and scanning electron microscope (SEM), respectively. Preferential growth of hexagonal GaN with 〈00.1〉 direction is observed and is clearly improved when the thickness of AlN buffer layer increases. Morphological changes in PS layer appearing after growth have been also discussed.
GaN optical qualities were determined by photoluminescence at low and room temperature (RT)."
}
@article{Bouzaïene2004897,
title = "Self-organized InAs/GaAs quantum dots multilayers with growth interruption emitting at 1.3 μm",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "897 - 900",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001144",
author = "L. Bouzaïene and L. Sfaxi and H. Maaref",
keywords = "Quantum dots",
keywords = "Photoluminescence",
keywords = "Atomic force microscopy",
abstract = "We have grown single, 10 and 20 InAs/GaAs quantum dots (QDs) multilayers by molecular beam epitaxy in Stranski-Krastanov growth mode with and without growth interruption. Multilayer structures of InAs QDs have been studied by photoluminescence (PL) and atomic force microscopy (AFM) techniques. Between 1 and 10 layers of QDs, 10 K PL shows a shift energy, and a PL linewidth reduction. Moreover, AFM image of the 10 layers sample shows that the InAs QDs size remains constant and almost uniform when the growth is without interruption. These effects are attributed to electronic coupling between QDs in the the columns. However, we show the possibility of extending the spectral range of luminescence due to InAs QDs up to 1.3 μm. Realisation of such a wavelength emission is related to formation of lateral associations or coupling of QDs (LAQDs or LCQDs) during InAs deposition when growth interruption (20 s) is used after each InAs QDs layer deposition. The growth interruption applied after the deposition of the InAs layer allows the formation of well-developed InAs dots (large dot size)."
}
@article{Esame2004901,
title = "Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "901 - 908",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001041",
author = "Onur Esame and Yasar Gurbuz and Ibrahim Tekin and Ayhan Bozkurt",
keywords = "RF device",
keywords = "SiGe",
keywords = "GaAs",
keywords = "InP",
keywords = "HBT",
keywords = "Modeling",
keywords = "III–V Devices",
abstract = "This paper presents a comprehensive comparison of three state-of-the-art heterojunction bipolar transistors (HBTs); the AlGaAs/GaAs HBT, the Si/SiGe HBT and the InGaAs/InP HBT. Our aim in this paper is to find the potentials and limitations of these devices and analyze them under common Figure of Merit (FOM) definitions as well as to make a meaningful comparison which is necessary for a technology choice especially in RF-circuit and system level applications such as power amplifier, low noise amplifier circuits and transceiver/receiver systems. Simulation of an HBT device with an HBT model instead of traditional BJT models is also presented for the AlGaAs/GaAs HBT. To the best of our knowledge, this work covers the most extensive FOM analysis for these devices such as I–V behavior, stability, power gain analysis, characteristic frequencies and minimum noise figure. DC and bias point simulations of the devices are performed using Agilent's ADS design tool and a comparison is given for a wide range of FOM specifications. Based on our literature survey and simulation results, we have concluded that GaAs based HBTs are suitable for high-power applications due to their high-breakdown voltages, SiGe based HBTs are promising for low noise applications due to their low noise figures and InP will be the choice if very high-data rates is of primary importance since InP based HBT transistors have superior material properties leading to Terahertz frequency operation."
}
@article{RamanaMurthy2004909,
title = "A method for deep etching in dielectric films for 3D-chip and photonics applications",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "909 - 913",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400103X",
author = "B. Ramana Murthy and Rakesh Kumar",
keywords = "RIE",
keywords = "Deep etching",
keywords = "Dielectric film etching",
keywords = "Photonics",
keywords = "3D-chip integration",
keywords = "RFIC devices",
abstract = "In this paper, RIE of thick undoped silicate glass (USG) films for various applications is described. Though moderate etch rates (∼0.4 μm/min) were achieved for USG film, process development was quite challenging due to stringent requirements of deep USG etching (>6 μm) and vertical profile. Alternatively, etch process with higher etch rate (1.0 μm/min) was also evaluated for profile angle and results were found not comparable to low etch rate process. However, low etch rate process was found to have tool limitations and an alternate method called ‘discrete etching’ was proposed and successfully verified. Promising results were obtained with etch depth (6 μm) and vertical profile (∼89.50°) in USG as well as SiON films. Based on the results discrete etching method was found to have provided advantage of unlimited capability for deep etching."
}
@article{Kuo2004915,
title = "Analysis of instability line width and white wall created by the photolithography process",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "915 - 922",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.023",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001016",
author = "Yang-Kuao Kuo and Chuen-Guang Chao and Chi-Yuan Lin",
keywords = "Line width",
keywords = "White wall",
abstract = "In the photolithography processing of semiconductor, line width is smaller and smaller. Therefore, the requirements of process window are stricter than before. In the small line width, the formation of serious white wall will affect line width and cause rejects in following process. The study conducted research on the control of best focus in which particularly explored the relationship between exposure dose and line width and the phenomenon of white wall generated by focus. The research obtained related coefficients of exposure dose-line width and exposure dose-white wall by coating photo resist of different components with the same thickness on the surface of fused silica wafer. The results of research found that exposure dose might not only change line width but also had important effects on white wall. Among others, the most important factor for exposure dose is the component of sensitivity of photo resist."
}
@article{Shi2004923,
title = "Self-aligned In0.49Ga0.51P/GaAs HBT DC and RF characteristics related with orientations",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "923 - 925",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.05.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000667",
author = "Ruiying Shi and Min Gong and Xunchun Liu and Haifen Sun and Zhipeng Yuan",
keywords = "InGaP/GaAs HBT orientation effects",
keywords = "DC current gain",
keywords = "Cutoff frequency",
keywords = "Lateral etched profile",
abstract = "A self-aligned InGaP/GaAs HBT DC and RF characteristics related with orientations were studied. The DC current gain was greater for the [0 1 1] emitter orientation compared to [0 1 1̄] orientation. However, it also showed slightly better RF performance for [0 1 1̄] orientation with a cutoff frequency fT 69 GHz compared to the fT of 62 GHz for the [0 1 1] orientation. This experimental work has been proposed that the dependence of the characteristics could be attributed to both piezoelectric effect and the difference between lateral etched profiles in different directions."
}
@article{I2004927,
title = "A counter-based pseudo-exhaustive pattern generator for BIST applications",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "927 - 935",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.03.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000448",
author = "I. and Voyiatzis",
keywords = "Built-in self test",
keywords = "Pseudo-exhaustive test",
abstract = "Built-in self test (BIST) has been accepted as an efficient alternative to external testing, since it provides for both test generation and response verification operations, on chip. Pseudo-exhaustive BIST generators provide 100% fault coverage for detectable combinational faults with much fewer test vectors than exhaustive testing. An (n,k) adjacent bit pseudo-exhaustive test set (PETS) is a set of n-bit vectors in which all 2k binary combinations appear to all adjacent k-bit groups of inputs.
In this paper a novel, counter-based pseudo-exhaustive BIST generator is presented, termed pseudo-exhaustive counter (PEC). An n-stage PEC can generate (n,k) adjacent bit PETS for any value of k, k<n. This kind of testing is termed Generic pseudo-exhaustive testing. A Generic pseudo-exhaustive generator can be used to pseudo-exhaustively test more than one module. The PEC scheme is then extended to recursively generate all (n,k) adjacent bit pseudo-exhaustive tests sets for k<=n. This kind of testing is termed progressive pseudo-exhaustive testing in the literature; α progressive pseudo-exhaustive generator can pseudo-exhaustively test more than one modules in parallel.
Comparisons of PEC with techniques proposed in the literature that can be used for Generic and Progressive pseudo-exhaustive testing reveal that PEC is more effective in terms of both hardware overhead and time required to complete the test."
}
@article{RossM2004937,
title = "Corrigendum to “An overview of standards in electromagnetic compatibility for integrated circuits” [Microelectronics 35 (2004) 487–495]",
journal = "Microelectronics Journal",
volume = "35",
number = "11",
pages = "937 - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000953",
author = "Ross M. and Carlton"
}
@article{tagkey2004IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "IFC - ",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00122-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001223",
key = "tagkey2004IFC"
}
@article{Vladimir2004789,
title = "Special issue on thermal investigations of integrated circuits and systems (THERMINIC'03)",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "789 - 790",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000849",
author = "Vladimir and Székely"
}
@article{Christofferson2004791,
title = "Thermal measurements of active semiconductor micro-structures acquired through the substrate using near IR thermoreflectance",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "791 - 796",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000850",
author = "James Christofferson and Ali Shakouri",
keywords = "Thermoreflectance",
keywords = "Backside thermal imaging",
keywords = "Photothermal imaging",
abstract = "Modern, high-density integrated circuits (IC) typically use a flip chip bonding technique to increase performance on a greater number of interconnects. In doing so, the active devices of the IC are hidden under the exposed substrate, which precludes the use of typical surface thermal characterization techniques. A near infrared thermoreflectance method is described such that the temperature of active semiconductor devices can be measured through the substrate. Experimental results were obtained through a 200 μm thick silicon substrate. Temperature resolution of 0.1 K and spatial resolution of 5 μm has been achieved. The Fabry–Perot effect, due to multiple reflections between the device and the back of the substrate, has been experimentally and theoretically analyzed. Techniques to enhance the spatial resolution will be discussed."
}
@article{Lopez2004797,
title = "Characterization of the thermal behavior of PN thermoelectric couples by scanning thermal microscope",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "797 - 803",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000862",
author = "Luis David Patiño Lopez and Stéphane Grauby and Stefan Dilhaire and M. Amine Salhi and Wilfrid Claeys and Stéphane Lefèvre and Sebastian Volz",
keywords = "Thermoelectric device",
keywords = "Atomic force microscopy",
keywords = "Thermal properties identification",
abstract = "In this paper, we present the temperature profile measurements of a PN thermoelectric couple. The study is made in the AC regime. A couple is fed by a sinusoidal current and, using a scanning thermal microscope (SThM) and a lock-in scheme, we measure the amplitude and the phase of the first harmonic of the temperature along the surface of the couple. The influence of frequency is observed and we present a model which predicts the thermal behavior of the couple. The results of this model are in excellent agreement with the measurements."
}
@article{Holzer2004805,
title = "Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "805 - 810",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000874",
author = "Stefan Holzer and Rainer Minixhofer and Clemens Heitzinger and Johannes Fellner and Tibor Grasser and Siegfried Selberherr",
keywords = "Electro-thermal simulation",
keywords = "Parameter extraction",
keywords = "Polysilicon",
keywords = "Polycrystalline silicon",
keywords = "Polyfuse",
abstract = "An approach for determining higher order coefficients of the electrical and thermal conductivities for different materials is presented. The method is based on inverse modeling using three-dimensional transient electrothermal finite element simulations for electrothermal investigations of complex layered structures, for instance polycrystalline silicon (polysilicon) fuses or other multi-layered devices. The simulations are performed with a three-dimensional interconnect simulator, which is automatically configured and controlled by an optimization framework. Our method is intended to be applied to optimize devices with different material compositions and geometries as well as for achieving an optimum of speed and reliability."
}
@article{Dilhaire2004811,
title = "Thermal parameters identification of micrometric layers of microelectronic devices by thermoreflectance microscopy",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "811 - 816",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000886",
author = "Stefan Dilhaire and Stéphane Grauby and Wilfrid Claeys and Jean-Christophe Batsale",
keywords = "Thermoreflectance",
keywords = "Calibration",
keywords = "Thermal parameters identification",
keywords = "Thermal conductivity",
keywords = "Microelectronic devices",
keywords = "Laser probing",
abstract = "The objective of this paper is the determination of the thermal properties of micrometric layers of electronic devices using a thermoreflectance probe. Unlike classical thermoreflectance methods, the main point of the method presented in this paper is to be able to quantify the heating energy (by Joule effect) and the effective temperature response (by calibration). It is then possible to estimate the thermal conductivity (in W m−1 K−1) instead of the thermal diffusivity (in m2 s−1). A semi-analytical thermal 3D-periodic model then enables to identify a few thermal properties of the layers of the device, and in particular the thermal conductivity of the passivation layer. This methodology has been applied to the study of an industrial device containing interconnect test structures made of copper lines on a silicon wafer with a few micrometers BCB (BenzoCycloButene) polymer passivation layer. The BCB thermal conductivity and the metal heat capacity are obtained using this method."
}
@article{Song2004817,
title = "An ac microcalorimeter for measuring specific heat of thin films",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "817 - 821",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000898",
author = "Qinglin Song and Zheng Cui and Shanhong Xia and Shaofeng Chen",
keywords = "Thermal property of thin films",
keywords = "MEMS",
keywords = "Ac measurement",
abstract = "Microcalorimeter based on suspended SiO2 membrane structures has been designed and fabricated. The geometry of suspension arms is optimized by ANSYS simulation to ensure that it provides maximum thermal isolation between the membrane structure and the supporting substrate. The microcalorimeter is intended to be a sample carrier onto which other thin films can be deposited for thermal property measurement. An ac modulation method has been used to measure the specific heat of aluminum thin film with thickness from 13.5 to 370 nm. The measurements demonstrated clearly the dependence of specific heat on thin film thickness."
}
@article{Pilgrim2004823,
title = "Nanoscale electrothermal co-simulation: compact dynamic models of hyperbolic heat transport and self-consistent device Monte Carlo",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "823 - 830",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000904",
author = "N.J. Pilgrim and W. Batty and R.W. Kelsall and C.M. Snowden",
keywords = "Thermal simulation",
keywords = "Electrothermal CAD",
keywords = "Dynamic compact model",
keywords = "Nanoscale devices",
keywords = "Hyperbolic heat transport",
keywords = "Heat wave equation",
keywords = "Monte Carlo simulation",
keywords = "pHEMT",
abstract = "Two problems in the self-consistent, electrothermal co-simulation of nanoscale devices, are discussed. It is shown that the construction of dynamic compact thermal models for nanoscale devices, based on solution of the hyperbolic (wavelike) heat transport equation, can follow essentially the same approach as the authors' analytical thermal impedance matrix method for the parabolic (diffusive) equation. The physicality of the hyperbolic equation is discussed in the light of calculated results. The analytical impedance matrix method for the time-independent case is employed in a thermally self-consistent device Monte Carlo simulation, illustrating the potential for detailed study of nanoscale electrothermal effects."
}
@article{Janicki2004831,
title = "Ion sensitive field effect transistor modelling for multidomain simulation purposes",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "831 - 840",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000916",
author = "Marcin Janicki and Marcin Daniel and Michal Szermer and Andrzej Napieralski",
keywords = "Ion sensitive field effect transistor",
keywords = "Sigma–delta ADC",
keywords = "Multidomain simulations",
abstract = "The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive field effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level.
First, the model was validated with electrical measurements and simulations of real structures performed for different ion concentration and temperature values. Then, the ISFET sensor model was employed for mixed-signal simulations in VHDL-AMS, when the analysis of a microsystem consisting of the ISFET sensor and a sigma–delta analogue-to-digital converter was carried out. Additionally, the presence of other ions than hydrogen in the measured solution was also taken into account in the simulations."
}
@article{Perpiñà2004841,
title = "Self-heating experimental study of 600 V PT-IGBTs under low dissipation energies",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "841 - 847",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000928",
author = "X. Perpiñà and X. Jordà and N. Mestres and M. Vellvehi and P. Godignon and J. Millán",
keywords = "Temperature measurement",
keywords = "IGBTs",
keywords = "Self-heating",
keywords = "Internal infrared laser deflection",
abstract = "The time evolution of temperature gradient in the drift region (N−-epilayer) of unirradiated and proton irradiated punch-through type 600 V insulated gate bipolar transistors (IGBT) structures has been measured by using the internal IR-laser deflection technique. This technique is applied in the device drift region, since N−-epilayer is transparent for the working wavelength (1.3 μm). High spatial (35 μm) and time (below 1 μs) resolution is achieved. The experimental results are explained with numerical thermal 2D-simulation and afterwards, compared with a simplified thermal model adapted to low dissipation energies. Good agreement is obtained between the experimental results and the thermal behaviour predicted by the model. Temperature gradients as low as 0.5 mK μm−1 have been measured with the proposed equipment in 5.9×5.9 mm2 IGBT chips."
}
@article{Graziano2004849,
title = "Effects of temperature in deep-submicron global interconnect optimization in future technology nodes",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "849 - 857",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.017",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400093X",
author = "Mariagrazia Graziano and Mario R. Casu and Guido Masera and Gianluca Piccinini and Maurizio Zamboni",
keywords = "Interconnects",
keywords = "Temperature",
keywords = "Delay optimization",
keywords = "Inductance",
keywords = "Scaling",
abstract = "The resistance of on-chip interconnects and the current drive of transistors are strongly temperature-dependent. As a result, the interconnect performance in Deep-Submicron technologies is affected by temperature in a substantial proportion. In this paper we evaluate thermal effects in global RLC interconnects and quantify their impact in a standard optimization procedure based on repeaters insertion. By evaluating the difference between a simple RC and an accurate RLC model, we show how the temperature induced increase of resistance may reduce the impact of inductance. We also project the evolution of such effects in future CMOS technologies, according to the semiconductor roadmap."
}
@article{Lorenzo2004859,
title = "Electro-thermal chaotic oscillations of paralleled bipolar transistors",
journal = "Microelectronics Journal",
volume = "35",
number = "10",
pages = "859 - 868",
year = "2004",
note = "Therminic'03",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.018",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000941",
author = "Lorenzo and Codecasa",
keywords = "Bipolar junction transistor",
keywords = "Self-heating",
keywords = "Electro-thermal coupling",
keywords = "Chaotic oscillation",
abstract = "In this work a detailed theoretical analysis of the parallel connection of two power Bipolar Junction Transistors (BJTs), including the self-heating effect, is presented. The analysis of the resulting third-order dynamic system reveals the possibility of inducing chaotic oscillations for suited choices of electrical parameters. The conditions determined by the theoretical analysis are confirmed by numerical simulations of the circuit with parameters reasonable for commercial BJTs."
}
@article{tagkey2004IFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "IFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00106-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001065",
key = "tagkey2004IFC"
}
@article{Fang2004687,
title = "Effects of temperature and aperture size on nanojet ejection process by molecular dynamics simulation",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "687 - 691",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204001028",
author = "Te-Hua Fang and Win-Jin Chang and Shi-Cheng Liao",
keywords = "Molecular dynamics simulation",
keywords = "Lennard-Jones potential",
keywords = "Nanojet",
keywords = "Nozzle",
keywords = "Ejection",
abstract = "This paper studies the effects of temperature and aperture size on the nanojet ejection process by means of molecular dynamics simulation using the Lennard-Jones potential. According to the analysis, it can be seen that the spurting atoms from the nanojet aperture are more evenly distributed as the temperature is increased. However, as the temperature lowers, the atoms easily concentrate on the central region. Furthermore, when a larger nanojet aperture was used, the amount of spurting atoms increased and concentrated easily into the central region. The phenomenon of the pressure wave was found with the aid of molecular dynamics."
}
@article{Tsang2004693,
title = "Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "693 - 700",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.019",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000977",
author = "C.F. Tsang and C.Y. Li and A. Krishnamoorthy and Y.J. Su and H.Y. Li and L.Y. Wong and W.H. Li and L.J. Tang and K.Y. Ee",
keywords = "High-density-plasma diffusion barriers",
keywords = "Cu dual damascene",
keywords = "Electrical performance",
keywords = "Dielectric breakdown",
abstract = "Integration of Cu with low k dielectrics provided solution to reduce both resistance–capacitance time delay and parasitic capacitance of BEOL interconnections for 130 nm and beyond technology node. The motivation of this work is to study and improve electrical and reliability performance of two-level Cu/CVD low k SiOCH metallization from the results of diffusion barrier deposition schemes. Barrier deposition schemes are (a) high-density-plasma 250 Å Ta; (b) surface treatment of forming gas followed by high-density-plasma 250 Å Ta and (c) bi-layer of 100 Å Ta(N)/150 Å Ta. In this work, we demonstrated the superior and competency of high-density-plasma Ta deposition for Cu/CVD low k metallization and achieved excellent electrical and reliability results. Wafers fabricated with high-density-plasma Ta barrier scheme resulted in the best electrical yields, >90% for testing vehicles of dense via chains (via size=200 nm) and interspersed comb structures (width/space=200 nm/200 nm). Dielectric breakdown strength of the interspersed comb structures obtained at electric field of 0.3 MV/cm was ∼4 MV/cm."
}
@article{TeHua2004701,
title = "Mechanisms of nanooxidation of Si(100) from atomic force microscopy",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "701 - 707",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.022",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000965",
author = "Te-Hua and Fang",
keywords = "Nano-oxidation",
keywords = "Atomic force microscopy",
keywords = "Nanolithography",
keywords = "Silicon",
keywords = "Wear",
abstract = "The machining characteristics of the nanolithographic process were studied using atomic force microscopy. Nano-oxidation experiments were conducted to investigate the influence that the different experimental parameters had on height, width and the growth rate of the nanowires and nanodots as well as upon the machining efficiency. The experimental parameters included; the applied voltage, humidity, scanning oxidization time, crystalline orientation and the shape of the probe tip. The results indicated that as the oxidization time and the applied voltage were increased, the nanowire's height and width also increased. `Also, a nanowire with increased height was produced when the humidity was higher. Finally as the probe tip began to wear and the tip's radius increased, a nanowire with a higher height and width was produced."
}
@article{Breza2004709,
title = "Diamond icosahedron on a TiN-coated steel substrate",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "709 - 712",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.020",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000989",
author = "J. Breza and M. Kadlečíková and M. Vojs and M. Michalka and M. Veselý and T. Daniš",
keywords = "MW CVD",
keywords = "Diamond",
keywords = "Icosahedron",
keywords = "Raman spectroscopy",
keywords = "EDX",
keywords = "SEM",
abstract = "Diamond layers have been deposited by hot filament chemical vapour deposition (HF CVD) on TiN-coated steel substrates. After deposition, we could observe separate, well-developed diamond icosahedrons and decahedrons on the surface. We have found that a lower content of methane in hydrogen supports their growth, this being a result of multifold twinning. The quality of diamond layers has been evaluated by Raman spectroscopy and scanning electron microscopy."
}
@article{Leelasantitham2004713,
title = "A low-power, high-frequency, all-NMOS all-current-mirror sinusoidal quadrature oscillator",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "713 - 721",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000837",
author = "A. Leelasantitham and B. Srisuchinwong",
keywords = "Sinusoidal quadrature oscillator",
keywords = "All-NMOS",
keywords = "Only current mirrors",
keywords = "Negative resistance",
keywords = "Low power",
keywords = "High frequency",
keywords = "Figure of merits",
abstract = "A low-power, high-frequency, sinusoidal quadrature oscillator is presented through the use of only current mirrors where the small-signal paths are realized through all NMOS transistors. The technique is relatively simple based on (i) inherent time constant of current mirrors, i.e. the internal capacitances and the transconductance of a diode-connected NMOS, (ii) a negative resistance formed by a transconductance of a diode-connected NMOS load of a current mirror. No external passive components are required. As a particular example, a 2.83 GHz, 0.374 fT, 0.38 mW sinusoidal quadrature oscillator is demonstrated. Total harmonic distortions are less than 0.8%. The oscillation frequency is current-tunable over a range of 640 MHz or 22.62%. The amplitude matching and the quadrature phase matching are better than 0.04 dB and 0.17°, respectively. A figure of merit called a normalized carrier-to-noise ratio is 158.23 dBc/Hz at the 2 MHz offset from 2.83 GHz. Comparisons to other approaches are also presented."
}
@article{Santos2004723,
title = "High-voltage NMOS design in fully implanted twin-well CMOS",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "723 - 730",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000771",
author = "P.M Santos and H Quaresma and A.P Silva and M Lança",
keywords = "CMOS compatible",
keywords = "Drain engineering",
keywords = "Power integrated circuits",
keywords = "Reliability",
keywords = "Smart power",
abstract = "This paper discusses the viability of using last generation CMOS technology to develop a High-Voltage NMOS library for smart power integration.
Breakdown voltages of the order of 30 V can be achieved for Gate-Shifted extended drain NMOS devices fabricated in a fully implanted, twin-well, 0.5 μm CMOS core process, aimed for mixed-mode applications, without process modification or any additional mask.
The trade-offs of using high overdrive voltages, above nominal supply, to reduce On-resistance is also discussed. According to experiments on prototypes, devices under excessive overdrive voltages over long periods revealed threshold voltage and transconductance variations, due to gate oxide degradation."
}
@article{Tuğluoğlu2004731,
title = "Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under 60Co-γ rays",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "731 - 738",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000795",
author = "N Tuğluoğlu and Ş Altındal and A Tataroğlu and S Karadeniz",
keywords = "γ-Rays",
keywords = "Dielectric properties",
keywords = "MOS structure",
keywords = "Radiation effect",
keywords = "Conductivity",
keywords = "Frequency dependence",
abstract = "The metal–oxide–semiconductor (MOS) structures with insulator layer thickness range of 55–430 Å were stressed with a bias of 0 V during 60Co-γ ray source irradiation with the dose rate of 2.12 kGy/h and the total dose range was 0–5×105 Gy. The real part of dielectric constant ε′, dielectric loss ε″, dielectric loss tangent tanδ and the dc conductivity σdc were determined from against frequency, applied voltage, dose rate and thickness of insulator layer at room temperature for Au/SnO2/n-Si (MOS) structures from C–V capacitance and G–V conductance measurements in depletion and weak inversion before and after irradiation. The dielectric properties of MOS structures have been found to be strongly influenced by the presence of dominant radiation-induced defects. The frequency, applied voltage, dose rate and thickness dependence of ε′, ε″, tanδ and σdc are studied in the frequency (500 Hz–10 MHz), applied voltage (−10 to 10 V), dose rate (0–500 kGy) and thickness of insulator layer (55–430 Å) range, respectively. In general, dielectric constant ε′, dielectric loss ε″ and dielectric loss tangent are found to decrease with increasing the frequency while σdc is increased. Experimental results shows that the interfacial polarization can be more easily occurred at the lower frequency and/or with the number of density of interface states between Si/SnO2 interfaces, consequently, contribute to the improvement of dielectric properties of Au/SnO2/n-Si (MOS) structures."
}
@article{Chyuan2004739,
title = "Computational study of variations in gap size for the electrostatic levitating force of MEMS device using dual BEM",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "739 - 748",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000801",
author = "Shiang-Woei Chyuan and Yunn-Shiuan Liao and Jeng-Tzong Chen",
keywords = "MEMS",
keywords = "Levitating force",
keywords = "Electrostatic",
keywords = "DBEM",
keywords = "FEM",
keywords = "MEMS",
keywords = "Combdrive",
abstract = "For MEMS combdrive performance, the calculation of levitating force due to electrostatic field is very important, and an accurate electrostatic analysis is essential. Because the gap size between combdrive fingers and ground plane or movable finger and fixed finger, plays a very important role for levitation, a study of the effect of gap size variation is indispensable. For diverse gaps of MEMS comdrive design, the dual BEM (DBEM) has become a better method than the domain-type FEM because DBEM can provide a complete solution in terms of boundary values only, with substantial saving in modeling effort, hence the DBEM was used to simulate the fringing of field around the edges of the fixed finger and movable finger of MEMS combdrive for diverse gap size. Results show that the less the gaps between combdrive fingers and ground plane are, the larger the levitating force acting on the movable finger is. In addition, the levitating force becomes more predominant as the gaps between movable finger and fixed finger decrease. By way of DBEM presented in this article, an accurate electrostatic field can be obtained, and the follow-up control method of levitation force for MEMS combdrive can be implemented more precisely."
}
@article{Chang2004749,
title = "A new small-signal MOSFET model and parameter extraction method for RF IC's application",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "749 - 759",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400076X",
author = "Kow-Ming Chang and Han-Pang Wang",
keywords = "Gate resistance",
keywords = "RF MOSFET modeling",
keywords = "Substrate resistance",
keywords = "Nonreciprocal capacitance",
abstract = "In this paper, an accurate and simple small signal model of RF MOSFETs accounting for the distributed gate effect, the substrate parasitics and charge conservation is proposed. Meanwhile, a direct and accurate extraction method using linear regression approach for the components of the equivalent circuit of the MOSFET with S-parameters analysis is also proposed. The proposed model and extraction method are verified with the experimental data and an excellent agreement is obtained up to 10 GHz. The extraction results from the measured data for various bias conditions are presented. Also, the extracted parameters, such as transconductance gm, match well with those obtained from DC measurements. Besides, it is shown that a significant error in circuit performances would be found if the charge conservation is not properly considered."
}
@article{Reddy2004761,
title = "Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "761 - 765",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.06.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000783",
author = "G.Venkateshwar Reddy and M.Jagadesh Kumar",
keywords = "Silicon-on-insulator (SOI)",
keywords = "Double Gate (DG) SOI MOSFET",
keywords = "Channel engineering",
keywords = "Single halo (SH)",
abstract = "The novel features of an asymmetric double gate single halo (DG-SH) doped SOI MOSFET are explored theoretically and compared with a conventional asymmetric DG SOI MOSFET. The two-dimensional numerical simulation studies demonstrate that the application of single halo to the double gate structure results in threshold voltage roll-up, reduced DIBL, high drain output resistance, kink free output characteristics and increase in the breakdown voltage when compared with a conventional DG structure. For the first time, we show that the presence of single halo on the source side results in a step function in the surface potential, which screens the source side of the structure from the drain voltage variations. This work illustrates the benefits of high performance DG-SH SOI MOS devices over conventional DG MOSFET and provides an incentive for further experimental exploration."
}
@article{Nejati2004767,
title = "Systematic design of the pipelined analog-to-digital converter with radix<2",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "767 - 776",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.05.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000825",
author = "Babak Nejati and Omid Shoaei",
abstract = "A systematic design of the pipelined analog-to-digital converter with radix<2 is described. A 50 MHz, 3.3 V, 10-bit pipelined analog-to-digital converter has been implemented in a 0.25-μm CMOS technology using radix<2 architecture. It achieves more than 54 dB signal-to-noise plus distortion ratio in Nyquist signal sampling at 3.0 V (10% lower than the 3.3 V nominal value) over −40 to +120 °C temperature range with a full-scale sinusoidal input. The IM3 of the converter, which is an important parameter for the OFDM based systems, is less than −64 dB. Non-linearity is reduced through digital self-calibration and correction. The digital calibration procedure takes less than 24 μS and can be done either on power up or intermittently. The layout area is 1.8 mm×1.2 mm. The converter consumes 100 mA out of a 3.3 V supply including the reference circuitry, analog cells, and all digital blocks at full-scale Nyquist sampling speed."
}
@article{Tong2004777,
title = "Design and analysis of planar printed microwave and PBG filters using an FDTD method",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "777 - 781",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.012",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000679",
author = "Ming-Sze Tong and Yilong Lu and Yinchao Chen and Mingwu Yang and Qunsheng Cao and Viktor Krozer and Rüdiger Vahldieck",
keywords = "FDTD",
keywords = "UA-PML",
keywords = "Microwave and PBG filters",
abstract = "In this paper, various planar printed microwave and photonic band-gap (PBG) filters have been designed and analyzed by applying the finite difference time domain method, together with an unsplit-anisotropic perfectly matched layer technique as treatments of boundary conditions. The implemented solver was first validated by comparing the computed data with those published in literature, and a good agreement was observed between the results. Then, based on the specified design criteria, various microwave and PBG filters were designed and analyzed, in which the theoretical predictions matched well with the computed results for the characteristics of the proposed filters."
}
@article{WemLee2004783,
title = "Body ballast resistor enhances ESD robustness of deep sub-micron CMOS circuit",
journal = "Microelectronics Journal",
volume = "35",
number = "9",
pages = "783 - 788",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000497",
author = "Jam Wem Lee and Jin Lian Su and Howard Tang",
keywords = "ESD",
keywords = "Body ballast resistor",
keywords = "HBM",
keywords = "TLP",
keywords = "Turn-on resistance",
keywords = "Turn-on speed",
abstract = "In this paper, the body ballast resistor design is introduced in electrostatic discharges (ESD) protection circuit for deep submicron CMOS integration circuit applications. With having the resistor, the ESD strength, turn-on resistance and trigge-on speed are greatly modulated. Those good characteristics enhance the efficiency of ESD protection circuit and keep the gate-oxide away from ESD damages. The consequence is caused from the fact that body ballast resistor builds up a positive substrate potential during the ESD stressing; consequently, reduces source to substrate barrier height. It should be further addressed that only a few design complexity is added, which is especially useful in deep sub-micron ULSI manufacturing."
}
@article{tagkey2004OFC,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "OFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00069-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000692",
key = "tagkey2004OFC"
}
@article{Kang2004629,
title = "Size dependence saturation and absorption of PbS quantum dots",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "629 - 633",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000643",
author = "K Kang and K Daneshvar and R Tsu",
keywords = "Nanostructure",
keywords = "Quantum dots",
keywords = "All optical ADC",
abstract = "The saturation intensity for lead sulfide quantum dots in a titanium dioxide-glycerol matrix (PbS/TiO2-glycerol) on a glass substrate has been studied as a function of quantum cluster concentration and cluster size. The saturation intensity in these materials is strongly dependent on the size of the semiconductor nanocrystals, their concentration, or the sample thickness. The samples are reflective at a certain range of the incoming intensity of the optical field and become transparent over a threshold intensity beyond which the output and input intensities are linearly related. The system studied involves very dilute distribution of PbS QD of dimension∼10 nm embedded in a matrix of TiO2-glycerol. Since the distribution is relatively constant in each deposited layer, the total number of QDs in a given area is proportional to the thickness. We found that the threshold of power separating absorption-bleaching, Pth is linearly related to the thickness, with values of Pth ∼few mW/cm2, more than 2–3 orders of magnitude below that of QDs with dimension∼1 μm, representing a typical solid."
}
@article{Lee2004635,
title = "Investigation of manufacturing variations of planar InP/InGaAs avalanche photodiodes for optical receivers",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "635 - 640",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.009",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400062X",
author = "Bongyong Lee and Hongil Yoon and Kyung Sook Hyun and Yong Hwan Kwon and Ilgu Yun",
keywords = "Avalanche photodiode",
keywords = "Modeling",
keywords = "Manufacturing variation",
keywords = "Optical receiver",
abstract = "Planar InP/InGaAs avalanche photodiodes are widely used for high-speed optical receivers in optical fiber communication systems. Even though these avalanche photodiodes offer the excellent characteristics in high-speed operation, the performance metrics are affected by manufacturing parameter variations considerably. In this paper, the effects of manufacturing variations on the device performance are investigated. In order to build a photodiode model, the test structures were fabricated and the measured current–voltage characteristics were compared with the simulated data to verify the model. After the model verification, the variations of the breakdown voltage and punch-through voltage according to the different manufacturing parameters such as multiplication layer width and charge sheet density are examined. Based on the results, the manufacturability of the avalanche photodiodes can be improved by analyzing the manufacturing variations."
}
@article{Uddin2004641,
title = "Study of asymmetrical effects of silicon submicron transistors",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "641 - 645",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000631",
author = "Ashraf Uddin and Tay Yee Siong",
keywords = "Transistor",
keywords = "Short channel effect",
keywords = "Threshold voltage",
keywords = "Effective channel length",
abstract = "We studied the asymmetrical effect of submicron channel length NMOS silicon transistors. The threshold voltage of transistor was determined by transconductance (gm) extraction method and constant-current (CC) method. The effective channel length (Leff) was determined by ‘shift and ratio’ methods. The short channel and reverse short channel effect were observed from the threshold voltage (Vto) versus channel width (W) curve. The I–V curves were not shown significant asymmetry of drain and source. The results showed that the asymmetry of drain and source increased with reducing the channel length. The standard deviation of threshold voltage and effective channel length were increased with decreasing channel length."
}
@article{Jankovic2004647,
title = "Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "647 - 653",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000606",
author = "Nebojsa D Jankovic and G.Alastair Armstrong",
keywords = "Double-gate",
keywords = "Low-power circuit",
keywords = "Silicon layers",
keywords = "SOI",
abstract = "A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a mid-gap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET."
}
@article{Samantaray2004655,
title = "Electronic structures of high-k transition metal silicates: first-principles calculations",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "655 - 658",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400059X",
author = "C.B Samantaray and Hyunjun Sim and Hyunsang Hwang",
keywords = "TM silicates",
keywords = "High-k",
keywords = "Ab-initio calculation",
keywords = "Band gap",
keywords = "Density of states (DOS)",
abstract = "The energy band gaps and total density of states of different transitional metal (Sc, Zr) silicates have been studied using density functional theory and local density approximation. The problem of a decreasing band gap in Zr silicate predicts the band offset reduction from the introduction of 4d state below the conduction band edge. While, in case of Sc silicate, there is no such decrease in the band gap and it becomes more suitable for the device performances."
}
@article{PérezTomás2004659,
title = "IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "659 - 666",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000618",
author = "A Pérez-Tomás and X Jordà and P Godignon and J.L Gálvez and M Vellvehı́ and J Millán",
keywords = "IGBT driver",
keywords = "Power integrated circuit",
keywords = "CMOS",
keywords = "LDMOS",
abstract = "This paper discusses the benefits of a full-bridge output stage on integrated IGBT gate drive circuits. This full-bridge topology allows obtaining positive and negative gate voltages using a single floating power supply. Short circuit protections have also been integrated, implementing an original soft shutdown process after an IGBT short circuit fault. The monolithic integration is based on an innovative high-voltage CMOS technology for power integrated circuits, using a standard low cost CMOS technology, requiring only one extra processing step. Lateral power N- and P-MOS transistors have been optimized using 2D simulators attending both specific on-resistance and breakdown voltage in order to optimize the full-bridge output stage. The IGBT driver has been experimentally tested, producing ±15 V gate-to-emitter voltage, and supplying the current peaks required by the 600 V IGBT switching processes. The driver characteristic response times are adapted to work at high switching frequency (>25 kHz) with high value of capacitive loads (3.7 nF)."
}
@article{Chung2004667,
title = "A signal processing ASIC for ISFET-based chemical sensors",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "667 - 675",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000485",
author = "Wen-Yaw Chung and Chung-Huang Yang and Yaw-Feng Wang and Yi-Je Chan and W Torbicz and Dorota G Pijanowska",
keywords = "CMOS",
keywords = "ISFET",
keywords = "ASIC",
keywords = "Signal processing",
keywords = "Chemical sensors",
abstract = "With the advantages of small size, reliability, rapid response, compatibility to standard CMOS technology and on-chip signal processing, Ion-Sensitive Field Effect Transistor (ISFET)-based transducers are increasingly being applied in physiological data acquisition and environment monitoring. This paper presents a signal processing Application Specific Integrated Circuit (ASIC) and a discrete temperature compensation chip design of a potentiometric ISFET-based chemical sensor. To assure the measurement of a correct pH value, the two-point calibration circuitry based on the response of standard pH 4 and 7 buffer solution has been implemented by using Algorithmic State Machine hardware algorithms. For battery power consideration, the proposed signal processing ASIC consisting of low voltage (3 V) mixed signal modules has been developed and fabricated in a 0.5 μm CMOS technology. The results demonstrate small differences of pH response of ISFET's operating with and without ASIC device, i.e. only the order of 0.1 mV/pH with respect to sensitivity. Furthermore, using the temperature compensating circuitry reduces the ISFET temperature coefficient to +0.15 mV/°C, and hence results in a lower pH value variation of −0.0023 pH/°C. It was shown that more accurate pH measurement can be concluded with the proposed ASIC and VT extractor circuitry."
}
@article{Elvira2004677,
title = "A physical-based noise macromodel for fast simulation of switching noise generation",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "677 - 684",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.03.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920400045X",
author = "Luis Elvira and Ferran Martorell and Xavier Aragonés and José Luis González",
keywords = "Switching noise",
keywords = "Substrate noise",
keywords = "Noise macromodel",
keywords = "Noise prediction",
abstract = "Efficient prediction of the substrate noise generated by large digital sections is currently a major challenge in System-on-a-Chip design. A macromodel to accurately and efficiently predict the substrate noise generated by digital standard cells is presented. The macromodel is generated from identification of the physical elements relevant to noise generation. Techniques to directly or indirectly compute the values of the elements in the cell macromodel are proposed. Using this macromodel, prediction of the noise generated by large digital sections can be easily done following a methodology based on high-level logic simulation. As a first step to validation, the macromodel accuracy is demonstrated in some circuits consisting of a reduced number of gates."
}
@article{M2004685,
title = "Epitaxy of Nanostructures: V.A. Shchulin, N.N. Ledenstov, D. Bimberg (Eds.); Springer, ISBN 3-540-40488-0",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "685 - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000473",
author = "M and Henini"
}
@article{M2004685,
title = "Semiconductors: Data Handbook: Otfried Madelung (Ed.); Springer, ISBN 3-540-40488-0",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "685 - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000461",
author = "M and Henini"
}
@article{M2004685,
title = "X-ray Scattering from Semiconductors (2nd Edition): Paul F. Fewster; Imperial College Press, ISBN: 1-86094-360-8",
journal = "Microelectronics Journal",
volume = "35",
number = "8",
pages = "685 - 686",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.05.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000655",
author = "M and Henini"
}
@article{tagkey2004IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "IFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00052-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000527",
key = "tagkey2004IFC"
}
@article{Zhou2004571,
title = "Effect of deposition methods on dielectric breakdown strength of PECVD low-k carbon doped silicon dioxide dielectric thin films",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "571 - 576",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.03.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000369",
author = "H. Zhou and F.G. Shi and B. Zhao and J. Yota",
keywords = "Deposition methods",
keywords = "Dielectric breakdown strength",
keywords = "Low-k dielectric",
keywords = "Plasma-enhanced chemical vapor deposition",
keywords = "Thickness dependent",
keywords = "Temperature dependent",
keywords = "Conduction mechanism",
keywords = "Time dependent",
abstract = "The effect of deposition methods on dielectric breakdown strength of PECVD low-k dielectric carbon doped silicon dioxide films is investigated. I–V measurements were performed using metal-insulator semiconductor structures for carbon doped silicon dioxide thin films with various thicknesses by single deposition station and six sequential deposition systems. I–t measurements are also performed for films with the thickness of 32 nm prepared using both deposition methods. Comparison studies have been carried out for the thickness dependence, temperature dependence, conduction mechanism and time dependence of dielectric breakdown for carbon doped silicon dioxide with single layer and six sub-layers. Results demonstrated that both films follow the newly obtained relationship between dielectric strength EB and thickness d, i.e. EB∝(d−dc)−n, but with a lower exponential factor n and a larger thickness limit dc for films with six sub-layers. It is also demonstrated that films with six sub-layers have a higher dielectric strength in all the thickness and temperature ranges, a thickness independent thermal behavior and a longer lifetime under constant voltage stressing. This indicates that by tuning the deposition methods smaller thickness with desired dielectric properties can be achieved."
}
@article{Bouzrara2004577,
title = "Excitonic recombination processes in GaAs grown by close-space vapour transport",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "577 - 580",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.03.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000345",
author = "L Bouzrara and R Ajjel and H Mejri and M.A Zaidi and S Alaya and J Mimila-Arroyo and H Maaref",
keywords = "Close-space vapour transport technique",
keywords = "GaAs",
keywords = "Deep level transient spectroscopy",
keywords = "Photoluminescence",
keywords = "EL2 centre",
keywords = "Bound–exciton transitions",
keywords = "Near-bound-edge photoluminescence",
abstract = "Epitaxial GaAs layers were grown using the close-space vapour transport. From deep level transient spectroscopy measurements, the native EL2 donor has been observed in all of the layers with deposition temperature-dependent concentration. On the GaAs samples, also performed are photoluminescence experiments in the temperature range 10–300 K. Two peculiar features were revealed: (i) the radiative recombination in GaAs layers is increasingly dominated by bound–exciton transitions, (ii) the excitonic luminescence is found to be very sensitive to the growth conditions. A study of the near-band-edge photoluminescence as a function of power excitation and temperature has been done in an attempt to elucidate the origin of the enhanced bound–exciton luminescence."
}
@article{Fang2004581,
title = "Phase transformation of fullerenes using molecular dynamics simulation",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "581 - 583",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.03.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000357",
author = "Te-Hua Fang and Win-Jin Chang",
keywords = "Fullerenes",
keywords = "Nanostructures",
keywords = "Phase transitions",
abstract = "The phase transformation behavior of carbon clusters is investigated using molecular dynamics simulation. Phase transformation behavior plays an important role in generating cluster of weakly bound molecule. The simulation results show that the configuration of clusters changes from a spherical structure at low temperatures to a linear or prolate shape at high temperatures. As the number of carbon atoms increases the absolute value of the internal energy in the fullerene increases. Furthermore, the formation heat and melting point of the fullerene increase as the number of carbon atoms increases, except that the value of C60 is lower than that of C36."
}
@article{El_Mashade2004585,
title = "Performance analysis and stability testing of a new structure of optoelectronic integrated device",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "585 - 589",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.03.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000333",
author = "Mohamed B El_Mashade and M Ashry and Sh.M Eladl and M.S Rageh",
keywords = "Optoelectronic integrated device",
keywords = "Optical feedback coefficient",
keywords = "Optical amplification mode",
keywords = "Optical switching mode",
abstract = "This paper is devoted to the evaluation of the transient performance as well as testing the stability of a new version of optoelectronic integrated devices. This version is composed of a resonant cavity enhanced heterojunction phototransistor and a light-emitting diode. It will be called as a resonant cavity enhanced optoelectronic integrated device. The evaluation of its transient response is based on the frequency response of the constituent elements and the optical feedback inside the device. Analytical expressions describing the transient behavior are derived. The numerical results show that the transient performance of the version under consideration strongly depends on the optical feedback inside the device and it has a very high optical gain in comparison with the conventional types. In addition, the possibility of operating the new device in two distinct modes is also available as similar to conventional types. Moreover, testing the stability of the new version demonstrates that its optical gain is stable as long as the value of the optical feedback is maintained below threshold value, while exhibits instability for values of optical feedback, which is greater or equal to this threshold value."
}
@article{Igic2004591,
title = "A 2D physically based compact model for advanced power bipolar devices",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "591 - 594",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.02.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000242",
author = "P.M. Igic and M.S. Towers and P.A. Mawby",
keywords = "Compact model",
keywords = "Gate turn-off thyristor",
keywords = "Insulated gate bipolar transistor",
abstract = "A two-dimensional (2D) physical compact model for advanced power bipolar devices such as Injection Enhanced Gate Transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices, the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500 V–1500 A flat pack TOSHIBA IEGT."
}
@article{Fang2004595,
title = "Nanoindentation characteristics on polycarbonate polymer film",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "595 - 599",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.02.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000229",
author = "Te-Hua Fang and Win-Jin Chang",
keywords = "Hardness",
keywords = "Effective elastic modulus",
keywords = "Nanoindentation",
keywords = "Polymer",
keywords = "Creep",
abstract = "The nanoindentation experiment was carried out to estimate nanomechanical characteristics of polycarbonate polymer films. Hardness, effective elastic modulus and contact stress–strain rate curve were obtained. The results showed that the effective elastic modulus and the hardness decreased as the applied load was increased. As the hold time was increased, the effective elastic modulus and the hardness also decreased. Furthermore, decreasing the loading rate also decreased the effective elastic modulus and the hardness. A power-law creep equation was obtained. When taking a log coordinate to the equation, the contact stress increased as the contact strain rate increased and has a linear appearance."
}
@article{Liu2004601,
title = "Thermal-sensitive BST thin film capacitors for dielectric bolometer prepared by RF magnetron sputtering",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "601 - 603",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.02.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000217",
author = "Shi-Jian Liu and Xiang-Bin Zeng and Jun-Hao Chu",
keywords = "Thermal-sensitive",
keywords = "BST thin film capacitors",
keywords = "Temperature coefficient of dielectric constant",
keywords = "Dielectric bolometer mode",
abstract = "We have been developing a monolithic microbolometer technology for uncooled infrared focal plane arrays (Uncooled IRFPAs) along the route from fabricating pixels of thin-film dielectric bolometers on micromachined silicon substrates. In the paper, the thermal-sensitive barium strontium titanate (BST) thin film capacitors for that objective prepared by Radio-Frequency Magnetron sputtering have been investigated focusing on the condition of fabrication of BST thin films. Capacitor–Temperature properties of the thermal-sensitive BST thin film capacitors have been measured with impedance analyzer. According to the Capacitor–temperature curves, these indicated that the temperature coefficient of dielectric constant (TCD) within the ambient temperature region highly depended on the Radio-Frequency Magnetron sputtering condition of fabrication of BST thin films. BST thin film capacitors with TCD-value more than 21%/K have been prepared on the optimized condition. That is a good base for preparation of dielectric bolometer mode of uncooled IRFPAs."
}
@article{Zhao2004605,
title = "Study of reactive ion etching process to fabricate the PMMA-based polymer waveguide",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "605 - 608",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.02.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000230",
author = "Y Zhao and F Wang and Z.C Cui and J Zheng and H.M Zhang and D.M Zhang and S.Y Liu and M.B Yi",
keywords = "PMMA-based polymer waveguide",
keywords = "Reactive ion etching",
keywords = "Roughness",
keywords = "Resolution and recuring",
keywords = "Near-field pattern",
abstract = "To fabricate a PMMA-based polymer waveguide, the reactive ion etching (RIE) process is systematically studied and the fabrication techniques are established. The etch rate and sidewall morphology in oxygen plasma are investigated as a function of the radio frequency power and gas flow rate. The optimum etch parameters are given, taking into account simultaneously minimum sidewall roughness and directional etching. An innovative approach is reported to smooth sidewalls through a treatment process using resolution and recuring. In comparison with the RIE process without treatment, the sidewall roughness is improved by a factor of about 3. The observed near-field pattern illustrates the waveguide, fabricated by using this technique, achieves single-mode transmission at 1550 nm wavelength."
}
@article{Drosos2004609,
title = "The low power analogue and digital baseband processing parts of a novel multimode DECT/GSM/DCS1800 terminal",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "609 - 620",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.02.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000205",
author = "C Drosos and C Dre and D Metafas and D Soudris and S Blionas",
keywords = "DECT/GSM/DCS1800 terminal",
keywords = "Analogue and digital baseband",
keywords = "Direct conversion",
keywords = "GFSK/GMSK modem",
keywords = "Processor architecture",
abstract = "In order to support a multimode DECT/GSM/DCS1800 terminal architecture, with low power characteristics and integrated support for direct conversion terminal architecture, the critical parts of such a terminal were designed and implemented using three different chips. These parts include a baseband processor, a modem and suitable analogue parts. The baseband processor was designed to support multimode operation, all baseband processing required and different terminal architectures (heterodyne or direct conversion). The modem features a GMSK/GFSK modulator and a novel, low power detection algorithm supports a direct conversion terminal. The analogue circuitry includes analogue filters and Digital-to-Analog and Analog-to-Digital converters. The architecture of the direct conversion wireless terminal is presented along with details on the low power characteristics of the processor and the modem. Experimental results from the operation of the multimode terminal are presented."
}
@article{SinghMehta2004621,
title = "Placement of scattering bars in binary and attenuated phase shift mask for damascene trench patterning",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "621 - 626",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003203",
author = "Sohan Singh Mehta and Navab Singh and Moitreyee Mukherjee-Roy and Rakesh Kumar",
keywords = "Scattering bar",
keywords = "Attenuated phase shift mask",
keywords = "Binary mask",
keywords = "Partial coherence",
keywords = "Diffraction orders",
abstract = "Scattering bars have been very effective technique to increase the common lithography process window for patterns with design rules 0.18 μm and below. This paper studies the placement of scattering bars in binary and attenuated phase shift mask in damascene trench patterning. Different partial coherence values are used to compare the scattering bar effect in binary and 8% attenuated phase shift mask. At low partial coherence (σ) the trench size has been found more sensitive to scattering bar parameters than at high σ. Scattering bar separation is found more effective than size to affect the trench critical dimension (CD). At low partial coherence a deep valley or ‘V’ shaped CD trend is found in scattering bar separation versus CD curve. CD dip is more using APSM as compared to binary mask. The process latitude is poor at valley as compared to top. Also, 3 sigma CD variation and range is higher at valley as compared to other separations of the scattering bars."
}
@article{Wang2004627,
title = "Erratum to “Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation” [Microelectronics Journal 35 (4) 353–355]",
journal = "Microelectronics Journal",
volume = "35",
number = "7",
pages = "627 - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.04.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000503",
author = "Jiyou Wang and Guorui Ji and Peng Jin and Lijuan Zhao and Cunzhou Zhang"
}
@article{tagkey2004IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "IFC - ",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00038-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000382",
key = "tagkey2004IFC"
}
@article{E2004485,
title = "Electromagnetic compatibility of integrated circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "485 - 486",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003240",
author = "E and Sicard"
}
@article{RossM2004487,
title = "An overview of standards in electromagnetic compatibility for integrated circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "487 - 495",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.011",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003252",
author = "Ross M and Carlton",
keywords = "Electromagnetic compatibility",
keywords = "Integrated circuit",
keywords = "Semiconductor",
keywords = "Standard",
abstract = "The characterization of the electromagnetic compatibility (EMC) performance of integrated circuits (ICs) is receiving increasing focus as new applications and technology trends combine to raise the complexity of EMC compliance. The increased focus is driving the need for standardized measurement procedures to enable consistent evaluation and comparison of different devices. This paper discusses the need for standardization, describes the work in process by IEC TC47/SC47A Working Group 9 to standardize emissions and immunity EMC test methods for ICs, and examines trends in IC EMC."
}
@article{Bob2004497,
title = "IBIS and ICEM interaction",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "497 - 500",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003264",
author = "Bob and Ross",
keywords = "Input/output buffer information specification",
keywords = "Integrated circuit electromagnetic model",
keywords = "SPICE",
keywords = "VHDL-AMS",
keywords = "Verilog-AMS",
keywords = "Electronic design automation",
keywords = "Model",
keywords = "PCB",
keywords = "Electromagnetic compliance",
keywords = "Electronic design automation",
abstract = "This paper provides an introductory overview of recent developments from two standards-producing committees that will lead to electrical component models suitable for electromagnetic compliance simulation. One committee has produced the Input/Output Buffer Information Specification (IBIS) Version 3.2, and the other, the pending Integrated Circuit Electromagnetic Model (ICEM) document. Currently the ICEM document provides a core power supply model in terms of an IBIS-like syntax. However, the IBIS committee is working on a multi-lingual syntax extension to leverage existing languages (SPICE, VHDL-AMS, and Verilog-AMS) for an upcoming Version 4.1 release. The IBIS extension will enable faster adoption and usage of ICEM circuit constructs. This paper discusses aspects of multi-lingual tool evolution and ICEM model application."
}
@article{Levant2004501,
title = "ICEM modelling of microcontroller current activity",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "501 - 507",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003276",
author = "Jean-Luc Levant and Mohamed Ramdani and Richard Perdriau",
keywords = "Electromagnetic compatibility",
keywords = "Integrated circuit electromagnetic model",
keywords = "Measurement",
keywords = "Modelling",
keywords = "Simulation",
abstract = "Better prediction of electromagnetic compatibility (EMC) for components is becoming a topical demand due to technology improvements. It is requested by integrated circuit (IC) manufacturers as well as by equipment integrators. The French UTE standardisation group has proposed an EMC modelling methodology for ICs, called integrated circuit electromagnetic model (ICEM). This proposal improves and extends the IBIS standard towards conducted emission prediction (and later radiated emission) by providing additional information modelling the power network and the dynamic current activity of an IC, thus allowing the chip manufacturer to justify the package used as well as the number of power supply pins, and the equipment manufacturer to tune power supply and decoupling networks.
After a brief introduction to the ICEM model and the associated methods, this article shows a way of obtaining dynamic current activity models by measuring the current consumed on the IC power supply pins. The use of ICEM for the optimisation of decoupling networks, the evaluation of power supply noise and the tuning of the surface of power and ground planes is presented for the first time with subsequent results."
}
@article{Lochot2004509,
title = "REGINA test mask: research on EMC guidelines for integrated automotive circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "509 - 523",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003288",
author = "C. Lochot and S. Calvet and S. Ben Dhia and E. Sicard",
keywords = "EMC for IC",
keywords = "EMI",
keywords = "Parasitic emission",
keywords = "Radiated and Conducted measurements",
keywords = "Modeling",
keywords = "CMOS circuits",
abstract = "This paper presents the results obtained with a specific test mask designed at Motorola for the study of the electromagnetic parasitic emissions in integrated circuits (IC). First, origins of parasitic emissions are presented for CMOS circuits, and electromagnetic compatibility (EMC) measurements of IC emissions are detailed: a radiated measurement method with respect to the IEC61967-2 standard and a conducted one with respect to the IEC61967-4 standard. The REGINA test chip is then described, with a focus on particular structures allowing to test and verify some design guidelines for EMC, like delay cell, emissive structure or on-chip sensor. The printed circuit board that is use to implement the test chip and the experiment test bench are also described. A set of measurements is presented and some guidelines are deduced and recommended as design rules."
}
@article{T2004525,
title = "Influence of the power supply on the radiated electromagnetic emission of integrated circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "525 - 530",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.006",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300329X",
author = "T. and Ostermann",
keywords = "Electromagnetic compatibility",
keywords = "EMC",
keywords = "On-chip decoupling",
keywords = "Ground bounce",
keywords = "TEM-cell",
abstract = "Ground bounce as a result of fast switching currents is on of the main source for the electromagnetic emission of an integrated circuit. One common method to reduce the ground bounce amplitude is the use of on-chip decoupling capacitors. Besides of this measure other concepts, like the use of different power supply pins, are supposed to reduce ground bounce too. But for all of these measures detail knowledge for the optimal use does not exists so far. In this paper we present a test chip as well as a measurement method for investigations on these measures towards future design guidelines."
}
@article{Panyasak2004531,
title = "A current shaping methodology for lowering em disturbances in asynchronous circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "531 - 540",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003306",
author = "Dhanistha Panyasak and Gilles Sicard and Marc Renaudin",
keywords = "Electromagnetic emission reduction",
keywords = "Asynchronous digital circuit",
keywords = "Architectural description",
keywords = "Force directed scheduling",
abstract = "This paper describes a design methodology for parasitic electromagnetic emission reduction. The method exploits the flexibility brought by handshake based communication mechanisms implemented in asynchronous circuits. It starts from a structural description of the circuit, which is then refined according to the communication protocol used and annotated with operator latencies and current consumption. Force Directed Scheduling is then applied on the refined and annotated structural model of the circuit to determine the set of delays that have to be inserted in the handshaking protocols in order to minimize the peak-current without increasing the latency of the critical path. Applied to a Finite Impulse Response filter, the method enabled a 9 dB reduction of the peak-current."
}
@article{Perdriau2004541,
title = "An EMC-oriented VHDL-AMS simulation methodology for dynamic current activity assessment",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "541 - 546",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003318",
author = "Richard Perdriau and Mohamed Ramdani and Jean-Luc Levant and Eric Tinlot and Anne-Marie Trullemans-Anckaert",
keywords = "Electromagnetic compatibility",
keywords = "ICEM",
keywords = "VHDL-AMS",
keywords = "Modelling",
keywords = "Simulation",
keywords = "Memories",
keywords = "Prediction",
abstract = "Dynamic current activity extraction plays a very important role in estimating the electromagnetic compatibility of integrated circuits. For that purpose, the Integrated Circuit Electromagnetic Model (ICEM) is being developed by the International Electrotechnical Commission (IEC). This article introduces a mixed-mode simulation methodology, based on the VHDL-AMS language, which dramatically reduces simulation times while taking into account various circuit activities. The use of such a methodology in the case of SRAM memories is described, allowing the definition of an ICEM-compatible intellectual-property (IP) dynamic activity model aimed at emission level prediction."
}
@article{Steinecke2004547,
title = "Behavioral EMI models of complex digital VLSI circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "547 - 555",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.003",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300332X",
author = "T Steinecke and H Koehne and M Schmidt",
keywords = "EMC",
keywords = "Microcontrollers",
keywords = "Switching current",
keywords = "IC emission models",
keywords = "BSIM",
keywords = "Behavioral models",
abstract = "Increasing EMI potential of high-performance digital circuits like 32bit microcontrollers demand for switching current models and feasible ways to run netlist-based EMI simulations. A promising modeling approach for digital VLSI circuits is presented and a silicon test vehicle for correlation between models and measurements is described."
}
@article{Fiori2004557,
title = "Investigation on RFI effects in bandgap voltage references",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "557 - 561",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003331",
author = "F Fiori and P.S Crovetti",
keywords = "EMC",
keywords = "EMI",
keywords = "Bandgap voltage references",
keywords = "Operational amplifier",
abstract = "In this paper the susceptibility of integrated bandgap voltage references to Radio Frequency Interference (RFI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave RFI and the complete failures which may be experienced by bandgap circuits. The role of the susceptibility of the startup circuit and of the operational amplifier which are included in such circuits is also focused."
}
@article{Maurice2004563,
title = "GTEM cell facility use during project development phases for automotive",
journal = "Microelectronics Journal",
volume = "35",
number = "6",
pages = "563 - 569",
year = "2004",
note = "3rd International workshop on Electromagnetic compatibility of Integrated circuits",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.11.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003343",
author = "Olivier Maurice and François de Daran and Frédéric Lafon and Rabha Oussedrat and Imad Ben Yacoub",
keywords = "Electromagnetic compatibility",
keywords = "Gigahertz transverse electromagnetic mode",
keywords = "Trans electromagnetic",
keywords = "Integrated circuit electromagnetic model",
abstract = "The purpose of this paper is to present the results obtained with a gigahertz transverse electromagnetic mode (GTEM) cell for each phase of the project development, which consists of measuring and quantifying the integrated circuit's emissions and immunity compliance with automotive standards. These standards are defined using half anechoic chambers (HAC). Studies have already been conducted to compare trans electromagnetic (TEM) cell and HAC, or far-field emissions, and the test results show a limited correlation between TEM cells and the free space field or HAC. In this paper, it is shown that the correlation between the measurements made in a GTEM cell and HAC can be good enough in allowing us to use the GTEM facility during the research and development (R&D) phase (considering the facts that the HAC facility is often quite overloaded and of a high cost), that knowledge of the electromagnetic compatibility behavior of the integrated circuit is important for predicting the whole system's results as well as how to use an integrated circuit electromagnetic model to make the prediction of emissions."
}
@article{tagkey2004OFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "OFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00026-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000266",
key = "tagkey2004OFC"
}
@article{Son2004393,
title = "RESURF LDMOSFET with a trench for SOI power integrated circuits",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "393 - 400",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.02.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000114",
author = "Won-So Son and Young-Ho Sohn and Sie-young Choi",
keywords = "RESURF LDMOSFET",
keywords = "Trench",
keywords = "Silicon-on-insulator",
abstract = "A new structure of RESURF LDMOSFET is proposed, based on silicon-on-insulator, to improve the characteristics of the breakdown voltage and the specific on-resistance, where a trench is applied under the gate in the drift region. A trench is used to reduce the electric field under the gate when the concentration of the drift region is high, thereby increasing the breakdown voltage and reducing the specific on-resistance. Detailed numerical simulations demonstrate the characteristics of this device and indicate an enhancement on the performance of the breakdown voltage and the specific on-resistance in comparison with an optimal conventional device with LOCOS under the gate."
}
@article{Lade2004401,
title = "A revised ideal model for AlGaAs/GaAs quantum well solar cells",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "401 - 410",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000102",
author = "S.J. Lade and A. Zahedi",
keywords = "Quantum well solar cell",
keywords = "Efficiency",
keywords = "Models",
keywords = "AlGaAs/GaAs",
abstract = "Quantum well solar cells (QWSCs) are heterostructure devices intended to achieve higher efficiencies than conventional cells. This paper extends a previous model for QWSC current–voltage characteristics by revising the equations for the absorbed flux and by introducing expressions to calculate radiative recombination coefficients and well effective densities-of-states. This revised model is in agreement with previous experimental results for AlGaAs/GaAs. Since the revised model incorporates detailed balance calculations, its predictions are consistent with the efficiency restrictions of this theory. The revised model, however, does predict efficiency enhancements for QWSCs in some configurations if non-radiative recombination is dominant, even in such a poor QWSC material as AlGaAs/GaAs."
}
@article{Corte2004411,
title = "Simulation analysis of the DC current gain in an n-p-n a-Si:H/SiGe/Si heterojunction bipolar transistor",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "411 - 415",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000096",
author = "Francesco G.Della Corte and Fortunato Pezzimenti",
keywords = "Heterojunction bipolar transistor",
keywords = "a-Si:H/SiGe heterojunction",
keywords = "Amorphous silicon",
abstract = "This paper presents the results of a simulation study focused on the evaluation of the DC characteristics of an n-p-n SiGe-based heterojunction bipolar transistor (HBT) performing an extremely thin n+ hydrogenated amorphous silicon (a-Si:H) emitter. The a-Si:H(n)/SiGe(p) structure exhibits an energy gap difference of approximately 0.8 eV mostly located at the valence band side and this results in an optimal configuration for the emitter/base junction to improve the emitter injection efficiency and thus the device performance.
Considering a 20% Ge uniform concentration profile in the base region, simulations indicate that the DC characteristics of an a-Si:H/SiGe HBT are strictly dependent on two essential geometrical parameters, namely the emitter width and the base width. In particular, the emitter thickness degrades device characteristics in terms of current handling capabilities whereas higher current gains are obtained for progressively thinner base regions. A DC current gain exceeding 9000 can be predicted for an optimized device with a thin emitter and a 10 nm-thick, 7×1018 cm−3-doped base."
}
@article{Dong2004417,
title = "Mechanism for convex corner undercutting of (110) silicon in KOH",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "417 - 419",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000084",
author = "Wei Dong and Xindong Zhang and Caixia Liu and Ming Li and Baokun Xu and Weiyou Chen",
keywords = "Convex corner",
keywords = "Undercutting",
keywords = "Covalent bond density",
keywords = "(110) Silicon",
abstract = "The cantilever is fabricated on (110) silicon wafer by anisotropic wet etching method in KOH; the sidewall of cantilever is {111} plane, and it is vertical to the substrate. The convex corner is undercut, and the concave corner structure corresponds with the design. The mechanism of the convex corner undercutting is explained by the theory of covalent bond density."
}
@article{N2004421,
title = "Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "421 - 425",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000047",
author = "N. and Konofaos",
keywords = "Silicon oxynitride",
keywords = "Metal-oxide-semiconductor devices",
keywords = "Bulk charges",
keywords = "Interface traps",
keywords = "Dielectric constant",
keywords = "Thin film devices",
abstract = "In the present work, we examine the properties of SiON films grown on Si substrates by CVD in order to investigate their suitability as potential materials in replacing SiO2 in metal-oxide-semiconductor (MOS) devices. Suitable metallization created MOS devices and electrical characterisation took place in order to identify their electrical properties. Electrical measurements included current–voltage (I–V), capacitance–conductance–voltage (C–V) measurements and admittance spectroscopy (Y−ω) allowing determination of the bulk charges and the dielectric response of the films. The analysis of the data also took into account the presence of traps at the Si/SiON interface calculated by a fast conductance technique. The interface states density was of the order of 1012 eV−1 cm−2. The dielectric constant was found to lie between 16 and 4.5 and the corresponding bulk trapped charges were found between 8 and 113 μCb cm−2. Post deposition annealing altered these values showing an improvement of the device behaviour. A short explanation of the above is also provided."
}
@article{Mehta2004427,
title = "Resist pattern peeling assessment in DUV chemically amplified resist",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "427 - 429",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000060",
author = "Sohan Singh Mehta and Sun Hai Qin and Moitreyee Mukherjee-Roy and Navab Singh and Rakesh Kumar",
keywords = "Acidic bottom antireflective coating",
keywords = "Post-exposure bake",
keywords = "Under cut",
keywords = "Pattern peeling",
abstract = "As device size shrinks resist line peeling becomes more challenging. In this paper we studied the resist pattern peeling based on resist processing parameters and type of bottom antireflective coating (BARC), for patterning trench structures with different duty ratios, in copper and low k dual damascene process. To minimize resist poisoning in dual damascene process, acetal-based resist was used. Significant improvement in via poisoning was observed with this chemistry as compared to environmentally stable chemically amplified resist chemistry but at the cost of pattern peeling. In order to solve pattern peeling problem we tried to analyze key factors such as compatibility with BARC, post-exposure bake, BARC curing, adhesion and their effects. Pitch dependency on pattern peeling margin is observed."
}
@article{Caddemi2004431,
title = "A robust and fast procedure for the determination of the small signal equivalent circuit of HEMTs",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "431 - 436",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000059",
author = "A Caddemi and G Crupi and N Donato",
keywords = "Pseudomorphic HEMT",
keywords = "Small signal model",
keywords = "Analytical elements extraction",
keywords = "Cold FET",
keywords = "Temperature",
abstract = "In this paper we present an analytical, fast, accurate and robust technique for the determination of the circuit model elements of HEMTs in the microwave range. By this method the values of the equivalent circuit parameters of the device under test are extracted using three measured scattering (S) parameter sets without any optimization. We also investigated the influence of the reverse transfer conductance Re(Y12) on the modelling by means of a gate drain resistance Rdg. The validity of this method was verified upon a set of pseudomorphic HEMTs having different gate widths tested on wafer at several bias and temperature conditions. Very good agreement between the simulated and measured S-parameters has been obtained. The procedure has been implemented in Agilent VEE language as a fully automated tool to allow an accurate, fast and complete device characterization requiring no operator supervision."
}
@article{Chalabi2004437,
title = "Thermal behaviour of 6H–SiC bipolar transistors: spice simulation and applications",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "437 - 442",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2004.01.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000072",
author = "D. Chalabi and M. Idrissi-Benzohra and A. Saidane and M. Benzohra and M. Ketata",
keywords = "6H–SiC",
keywords = "Thermal characterisation",
keywords = "Current mirror",
keywords = "Op-amp",
keywords = "Spice",
abstract = "As material quality improves and growth technology develops, SiC BJTs are regaining interest. They have the advantage of carrier modulation, high current capabilities and lower initial voltage drop. In this work, the thermal behaviour of 6H–SiC bipolar transistors is simulated. The examined figures of merit such as input resistance h11, current gain β and transconductance gm show superior performance of 6H–SiC BJTs, at high temperatures, when compared to similar silicon counterparts. In the range of temperatures −20 to 160 °C, drawbacks found in Si BJTs are attenuated or eliminated with the use of SiC BJTs. These advantages are transferred to 6H–SiC based circuits. The built current mirror shows quasi-ideal behaviour while the designed input stage of the amplifier has a voltage gain thermally stabilised up to 140 °C."
}
@article{Dimitris2004443,
title = "Low-cost, on-line self-testing of processor cores based on embedded software routines☆",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "443 - 449",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.12.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000035",
author = "Dimitris and Gizopoulos",
keywords = "On-line testing",
keywords = "Processor testing",
keywords = "Self-testing",
keywords = "Software-based self-testing",
keywords = "Low-cost testing",
abstract = "On-line testing for complex system-on-chip architectures requires a synergy of concurrent and non-concurrent fault detection mechanisms. While concurrent fault detection is mainly achieved by hardware or software redundancy, like duplication, non-concurrent fault detection, particularly useful for periodic testing, is usually achieved through hardware-based self-test.
Software-based self-test has been recently proposed as an effective alternative to hardware-based self-test allowing at-speed testing while eliminating area, performance and power consumption overheads.
In this paper, we investigate the applicability of software-based self-test to non-concurrent on-line testing of embedded processor cores and define, for the first time, the corresponding requirements. Low-cost, in-field testing requirements, particularly small test execution time and low power consumption guide the development of self-test routines. We show how self-test programs with a limited number of memory references and based on compact test routines provide an efficient low-cost on-line test strategy for an RISC processor core."
}
@article{Doyle2004451,
title = "Fast and accurate DAC modeling techniques based on wavelet theory",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "451 - 460",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.12.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000023",
author = "James T Doyle and Young Jun Lee and Yong-Bin Kim",
keywords = "CMOS",
keywords = "Digital-to-analog converters",
keywords = "Dynamic and static errors",
keywords = "Wavelet theory",
keywords = "DAC modeling",
keywords = "Mixed mode simulation",
abstract = "Two new modeling techniques based on principles of wavelet theory are described in this article. Macro-model and mathematical model are developed for analog and digital circuit simulation, respectively, for fast and accurate results using exponential function, damped sine wave, and linear waveform. An 8 bit DAC has been implemented to simulate and evaluate the models. The INLs of the macro and mathematical model based simulations are ±0.2LSB, which are the same as HSPICE simulation. The DNLs of HSPICE simulation, macro model, and mathematical model based simulations are ±0.22LSB, ±0.28LSB, and ±0.25LSB, respectively. The simulation times are 2.9 s for macro model, 0.15 s for mathematical model, and 68.09 s for HSPICE simulation."
}
@article{MR2004461,
title = "An empirical pseudopotential-based description of carrier scattering by LO phonons in semiconductor heterostructures",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "461 - 470",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.12.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003446",
author = "M.R. and Kitchin",
keywords = "Carrier scattering",
keywords = "Heterostructures",
keywords = "LO phonon",
abstract = "We have developed a model of LO phonon scattering in semiconductor heterostructures using the solutions of strained-layer empirical pseudopotential calculations with Fermi's Golden Rule. We have utilised this model to perform quantitative calculations of scattering lifetimes in GaSb/InAs photodetector superlattices over a temperature range of 50–400 K. The temperature dependencies of phonon absorption and emission by carriers are identified and the physical mechanisms behind these are traced. Comparisons with earlier calculations on elastic scattering due to isovalent defects are made. Phonon emission is found to be the dominant effect in most cases, exhibiting the shortest lifetimes and hence the largest scattering rates. These lifetimes are in the picosecond regime and are in good agreement with more widespread, envelope function-based calculations of phonon lifetimes in semiconductor heterostructures."
}
@article{Tsimperidis2004471,
title = "Design and simulation of a nanoelectronic single-electron universal Control–Control-Not gate",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "471 - 478",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.12.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003434",
author = "Ioannis Tsimperidis and Ioannis Karafyllidis and Antonios Thanailakis",
keywords = "Nanoelectronics",
keywords = "Single-electronics",
keywords = "Control–Control-Not gate",
abstract = "A single-electron universal Control–Control-Not gate (CCN gate) is presented in this paper. Bits of information are represented by the presence or absence of single-electrons at conducting islands. The logic operation of the CCN gate as well as its XOR, AND, NAND and NOT operation is verified using simulation. The stability of its universal operation is analysed using a Monte Carlo method. Stability analysis using free energy diagrams and stability plots verify the correct and stable operation of the gate."
}
@article{Yang2004479,
title = "Micro cantilever probe array integrated with Piezoresistive sensor",
journal = "Microelectronics Journal",
volume = "35",
number = "5",
pages = "479 - 483",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.12.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003422",
author = "Zunxian Yang and Xinxin Li and Yuelin Wang and Haifei Bao and Min Liu",
keywords = "Cantilever-tip probe",
keywords = "Nanoelectromechanical technology",
keywords = "Piezoresistive sensitivity",
keywords = "Electro-thermal nano-tip",
abstract = "A micro cantilever-tip silicon probe-array with integrated electro-thermal nano-tip and piezoresistive sensor has been presented for NEMS high-density data storage. After its fundamental working principle has been illustrated, such a 1×10 probe-array has been designed. Both analysis and FEM simulation are used for modeling and designing with their results agreeing well with tolerance of only 5%. The device has been fabricated with silicon bulk micromachining technologies. The relationship between the heating resistance and tip temperature was experimentally obtained and fitted with second order polynomial function. Based on those, the microsecond-instantaneous electro-thermal performance of the device has been gained and the tested results were in agreement with the simulated ones. Under the 4 V pulse power and 3 μs heating time, the tested results were indicative of the 463.15 K temperature on the tip, the 6.2 μs decreasing-temperature constant of the heating resistor and the nearly 100 KHz reading–writing velocity. The sensitivity of piezoresistivity was up to 5.4×104 under the force of 2×10−7 N, which was sufficient to read out the data from the polymer indent."
}
@article{tagkey2004IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "IFC - ",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(04)00013-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269204000138",
key = "tagkey2004IFC"
}
@article{Lee2004317,
title = "Preface",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "317 - ",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00236-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002362",
author = "Shuit-Tong Lee and Ningsheng Xu"
}
@article{Oversluizen2004319,
title = "The route towards a high efficacy PDP; influence of Xe partial pressure, protective layer, and phosphor saturation",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "319 - 324",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00237-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002374",
author = "G. Oversluizen and S. de Zwart and M.F. Gillies and T. Dekker and T.J. Vink",
keywords = "Plasma display panel",
keywords = "Partial pressure",
keywords = "Phosphor",
keywords = "Efficacy",
abstract = "PDP efficacy improvement factors are investigated. It is found that key elements for a high discharge efficiency are: a high Xe partial pressure combined with phosphor materials which show little saturation at high VUV load. In a color test panel a white luminance of 3500 cd/m2 and an efficacy of 4 lm/W is realized for sustaining at 225 V."
}
@article{Ke2004325,
title = "Effect of parylene layer on the performance of OLED",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "325 - 328",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00238-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002386",
author = "Lin Ke and Ramadas Senthil Kumar and Keran Zhang and Soo-Jin Chua and A.T.S Wee",
keywords = "Parylene layer",
keywords = "Indium tin oxide",
keywords = "Hole transporting layer",
abstract = "An organic light-emitting device structure with a thin parylene layer deposited by low-temperature chemical vapour deposition at the anode-organic interface was fabricated. Such a structure gives higher luminescence efficiency when operated at the same current density compared to one without the parylene layer. In addition, the devices with a thin parylene layer also show a smaller number and smaller size dark non-emissive areas, slower growth rate of the dark areas and a longer device lifetime. The modified surface of the indium tin oxide (ITO) shows an increased work function compared to that of the ITO surface alone and a reduced surface roughness, which contributes to the device performance improvement. The parylene layer is a conformal coating on the ITO surface, which could significantly stabilise the interface leading to a more uniform current density. It also provides a good barrier for blocking oxygen and moisture diffusion and hence reducing dark spot occurrence."
}
@article{Croci2004329,
title = "A fully sealed luminescent tube based on carbon nanotube field emission",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "329 - 336",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.07.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002398",
author = "Mirko Croci and Imad Arfaoui and Thomas Stöckli and André Chatelain and Jean-Marc Bonard",
keywords = "Chemical vapor deposition method",
keywords = "Nanotubes",
keywords = "Field emission",
abstract = "A fully sealed luminescent tube of 40 cm length and 4 cm diameter based on carbon nanotube field emission is demonstrated. The device shows a homogeneous illumination over the whole length and circumference of the tube and reaches the luminance of conventional fluorescent tubes while being mercury-free, continuously dimmable and with a high illuminance capability. The realization has been made possible with the development of a chemical vapor deposition method to grow nanotubes homogeneously on long metallic wires, which provides an additional possibility to control the mean length and density of the emitters. This control has proven to be of utmost importance as it makes possible to adjust the emission voltage and emission site density needed to reach the target intensity and specifications of the device."
}
@article{Wong2004337,
title = "High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "337 - 341",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00241-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002416",
author = "Man Wong and Hoi S. Kwok",
keywords = "Thin-film transistor",
keywords = "Polycrystalline silicon",
keywords = "Nickel",
abstract = "Low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid-phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field-effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid–crystal (LC) and organic light-emitting diode (OLED) flat-panel displays."
}
@article{Wu2004343,
title = "Recent development of polyfluorene-based RGB materials for light emitting diodes",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "343 - 348",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.07.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002428",
author = "Weishi Wu and Michael Inbasekaran and Michelle Hudack and Dean Welsh and Wanglin Yu and Yang Cheng and Chun Wang and Shari Kram and Melissa Tacey and Mark Bernius and Robert Fletcher and Kelly Kiszka and Steve Munger and James O'Brien",
keywords = "Polyfluorenes",
keywords = "Electroluminescent",
keywords = "Photoluminescent",
keywords = "Light emitting diodes",
abstract = "As a continuation of our presentation at IUMRS-2000 in Hong Kong, we report the latest development of polyfluorene-based Red, Green and Blue (RGB) materials for light emitting diodes at The Dow Chemical Company. A modified Suzuki coupling process is used to synthesize RGB fluorene-based homopolymers and copolymers. Optimization of reaction conditions has led to a highly efficient procedure to generate polymers with controlled molecular weight (Mw), ranging from 10,000 to above 500,000 depending on the requirements of the desired applications. The optical and electronic properties of the polymers are tailored through selective incorporation of different aromatic units into the fluorene copolymer systems. By using this methodology, a portfolio of fluorene-based polymers has been designed and synthesized, achieving emissive colors that cover the entire visible spectrum.
The performance of fluorene-based polymers in light emitting devices has been optimized by modifying the polymer compositions so as to increase charge mobilities and to improve the carrier injection balance. As a result of these compositional changes, devices based on Dow's green emitters, using bi-layer structures on indium tin oxide substrates and evaporated metal cathodes, have demonstrated unprecedented high efficiencies at high brightness levels and long lifetime performance. A device comprised of a Dow green emitting polymer has a low turn-on voltage of 2.25 V and exhibits a peak efficiency of 10.5 Cd/A at 6600 Cd/m2 at 4.85 V. These devices maintain an efficiency of greater than 10.0 Cd/A up to 50,000 Cd/m2and demonstrate very good stability as exemplified by a device half-life of greater than 1500-h starting from 1100 Cd/m2. Similar outstanding progress with red and blue emitters has also been made and will be discussed."
}
@article{Saito2004349,
title = "Pattern-deposition of light-emitting ZnO particulate film through biomimetic process using self-assembled monolayer template",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "349 - 352",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00243-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300243X",
author = "Noriko Saito and Hajime Haneda and Kunihito Koumoto",
keywords = "ZnO",
keywords = "Self-assembled monolayer",
keywords = "Selective deposition",
keywords = "Luminescence",
abstract = "We fabricated ZnO micropatterns by a novel process in an aqueous solution at low temperatures. Photo-patterned self-assembled monolayer with phenyl/OH-surface functional groups was used as a template. Site-selective electroless deposition of ZnO was realized on Pd catalyst adhered only to the phenyl-surfaces. The as-deposited ZnO shows 500–800 nm visible light photoluminescence, which would be related to OH ions introduced during deposition process. Patterned monochromatic cathodoluminescence image was successfully demonstrated for 1 μm-width lines."
}
@article{Wang2004353,
title = "Upconversion emission of a Er3+-doped glass microsphere under 633 nm excitation",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "353 - 355",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00244-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002441",
author = "Jiyou Wang and Guorui Ji and Peng Jin and Lijuan Zhao and Cunzhou Zhang",
keywords = "Upconversion",
keywords = "Doped-Er3+ glass microsphere",
keywords = "Morphology-dependent resonances",
abstract = "In this work, The TBS glass microspheres doped with Er3+ for morphology-dependent resonances of upconversion emission were designed. The glass sample components are 25TiO2–27BaCO3–8Ba(NO3)2–6ZnO2–9CaCO3–5H3BO3–10SiO2–7water glass-3Er2O3 (wt%), and the emission spectra of TBS glass and a TBS glass microsphere (about 48 μm in diameter) were measured under 633 nm excitation and discussed. The strong morphology-dependent resonances of upconversion luminescences in the microsphere were observed. The observed resonances could be assigned by using the well-known Lorenz–Mie Formalism."
}
@article{Wang2004357,
title = "Luminescence properties of Ca4GdO(BO3)3:Eu in ultraviolet and vacuum ultraviolet regions",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "357 - 361",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00245-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002453",
author = "Yuhua Wang and Tadshi Endo and Erqing Xie and Deyan He and Bin Liu",
keywords = "VUV phosphors",
keywords = "Gadolinium calcium oxoborate",
keywords = "Charge transfer transition",
abstract = "The luminescent properties of Ca4GdO(BO3)3:Eu3+ were investigated under excitation of UV and VUV light. Separate two broad bands at around 259 and 184 nm were observed in the excitation spectrum of Ca4GdO(BO3)3:Eu3+. These peaks were assigned to the charge transfer transition of Eu3+–O2− and Gd3+–O2−, respectively. Owing to the favorable spectral position in their broad intense excitation band, Eu3+ ions show a intense emission under 258 nm excitation in Ca4GdO(BO3)3:Eu3+. This spectral position was determined by the free oxygen ions O (1). Ca4GdO(BO3)3 doped with Eu3+ ion seems to be a preferable candidate as red lamp phosphor. On the other hand, a weak band with a maximum at about 184 nm was observed below 200 nm in the excitation spectrum of Ca4GdO(BO3)3:Eu3+. This phosphor do not emit effectively under the 147 nm excitation. This unfavorable profile was also due to the O (1) ions, which played a role to the shifting towards the lower energy sides. The luminescence of Eu3+ ions in Ca4GdO(BO3)3 was somewhat different from that observed in the other borates phosphors, but resembled to those observed in the oxide phosphors (e.g. Gd2O3, Y2O3 and Gd2SiO5). Such behavior was recognized by the detailed analysis of crystallographical surroundings around activator."
}
@article{Hori2004363,
title = "Unusual temperature dependence of electroluminescence intensity in blue InGaN single quantum well diodes",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "363 - 366",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00246-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002465",
author = "Atsuhiro Hori and Daisuke Yasunaga and Kenzo Fujiwara",
keywords = "III-nitride semiconductor",
keywords = "Light emitting diodes",
keywords = "Quantum well",
keywords = "Electroluminescence",
keywords = "InGaN",
abstract = "Temperature dependence of electroluminescence (EL) spectral intensity of the super-bright blue InGaN single quantum well (SQW) light emitting diodes (LEDs) has been carefully investigated over a wide temperature range (T=15–300 K) and as a function of injection current level (0.1–10 mA) in comparison with high quality GaAs SQW–LEDs. When T is slightly decreased to 180 K, the EL intensity efficiently increases in both cases due to the reduced non-radiative recombination processes. However, further decreasing T below 100 K, striking differences exist in EL intensity as well as injection current dependences between the two types of diodes. That is, the EL efficiency at lower T is found to be quite low for the blue diode in strong contrast to that of red GaAs SQW–LED where significant enhancement of the EL efficiency persists down to 15 K. These results indicate that the carrier capture efficiency of the blue SQW diode is unusually worse at lower T than at T=180–300 K, reflecting the unique radiative recombination processes under the presence of high-density dislocation (1010 cm−2)."
}
@article{Zhang2004367,
title = "Field electron emission from amorphous CNx:B films",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "367 - 370",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00247-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002477",
author = "Lan Zhang and Huizhong Ma and Ning Yao and Huanling Hu and Binglin Zhang",
keywords = "Amorphous CNx:B thin film",
keywords = "Field electron emission",
keywords = "Pulsed laser deposition technique",
abstract = "CNx:B thin films were prepared on titanium coated ceramic substrate by pulsed laser deposition technique (PLD). The microstructure of the film was examined using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The analyses indicate that the deposited samples are amorphous CNx:B thin films. Field electron emission characteristics of amorphous CNx:B thin films were measured in a vacuum chamber with a base pressure of about 3.2×10−5 Pa. The turn-on field of the film was 3.5 V/μm. The current density was 60 μA/cm2 at an electric field of 9 V/μm. The experimental results indicate that this film could be a promising material applicable to cold cathodes."
}
@article{Wang2004371,
title = "Field emission mechanism from nanocrystalline cubic boron nitride films",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "371 - 374",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00248-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002489",
author = "B. Wang and R.Z. Wang and H. Zhou and X.H. Yan and J.X. Cao and H. Wang and H. Yan",
keywords = "Field emission",
keywords = "Cubic boron nitride",
abstract = "An electron-emission theoretical model integrating the change in the grain size of nanocrystalline cubic boron nitride (c-BN) thin films was established. To understand better the essence of field emission, an accurate numerical scheme, the transfer matrix method, that can be used to compute the tunneling coefficients of the actual surface barrier, was also adopted. The present results show that the emission current from nanocrystalline grain films is far larger than that from regular grain films or bulk c-BN."
}
@article{Liu2004375,
title = "Electroluminescence of SrAl2O4:Eu2+ phosphor",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "375 - 377",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00249-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002490",
author = "Zhifu Liu and Yongxiang Li and Yuhong Xiong and Dong Wang and Qingrui Yin",
keywords = "SrAl2O4:Eu2+",
keywords = "Thick film",
keywords = "Electroluminescence",
keywords = "Display",
abstract = "The SrAl2O4:Eu2+ phosphor powders have been synthesized by sol–gel process. Electroluminescent (EL) properties of the SrAl2O4:Eu2+ phosphor were investigated using a convenient thick film device. Green light emitting at a peak of 508 nm was obtained when driven by sine alternating current (AC). The color coordinate of the emission was x=0.148 and y=0.635. Luminance–voltage and afterglow characteristics of the SrAl2O4:Eu2+ EL devices were studied. The results show that SrAl2O4:Eu2+ can be used as green phosphor for EL displays."
}
@article{Lu2004379,
title = "SrAl2O4: Eu2+, Dy3+ phosphors derived from a new sol–gel route",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "379 - 382",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00250-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002507",
author = "Yiqing Lu and Yongxiang Li and Yuhong Xiong and Dong Wang and Qingrui Yin",
keywords = "Strontium aluminate",
keywords = "Sol–gel process",
keywords = "Rare earth",
keywords = "Phosphor",
abstract = "The SrAl2O4: Eu2+, Dy3+ phosphor powders were prepared by a new sol–gel method using aluminum isopropoxide and strontium acetate as precursors. The sol–gel process and the structure of the phosphor powders were investigated by means of DSC-TG and XRD. It was found that the single-phase SrAl2O4 was formed at 900 °C, which is 300 °C lower than that required for the conventional solid-state reaction. The particle morphology, photoluminescence and afterglow properties of the phosphors were studied in this article."
}
@article{Fu2004383,
title = "Properties of transparent conductive ZnO:Al thin films prepared by magnetron sputtering",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "383 - 387",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00251-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002519",
author = "En-Gang Fu and Da-Ming Zhuang and Gong Zhang and Zhao ming and Wei-Fang Yang and Jia-Jun Liu",
keywords = "Sputtering",
keywords = "ZnO:Al thin films",
keywords = "Substrate temperature",
keywords = "Argon gas pressure",
keywords = "Resistivity",
keywords = "Transmittance",
abstract = "Middle-frequency alternative magnetron sputtering was used to deposit transparent conductive ZAO (ZnO:Al) thin films with ZAO (98 wt%ZnO+2 wt%Al2O3) ceramic target on glass and Si wafers. The influences of the various deposition parameters on the structural, optical and electrical performances of ZAO films have been studied. The structural characteristics of the films were investigated by the X-ray diffractometer and atomic force microscope, while the visible transmittance, carrier concentration and Hall mobility were studied by UV–VIS and the Hall tester, respectively. The lowest resistivity obtained in the work was 4.6×10−4 Ω cm for the film with average transmittance of 90.0% within the visible wavelength range and sheet resistance of 32 Ω, which was deposited at 250 °C and 0.8 Pa."
}
@article{He2004389,
title = "The study on mechanism of ultraviolet laser emission at room temperature from nanocrystal thin ZnO films grown on sapphire substrate by L-MBE",
journal = "Microelectronics Journal",
volume = "35",
number = "4",
pages = "389 - 392",
year = "2004",
note = "Advanced Materials and Devices for Large Area Electronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00252-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002520",
author = "Yong-ning He and Chang-Chun Zhu and Jing-wen Zhang",
keywords = "ZnO nanocrystal thin film",
keywords = "Laser molecular beam epitaxy",
keywords = "Excitonic radiative recombination",
keywords = "The quantum size confinement effect",
abstract = "ZnO nanocrystal thin films were fabricated on sapphire substrates by laser molecular beam epitaxy. The structure and optical properties of the films were investigated experimentally. The film having small nanocrystal size of about 50–200 nm shows optically pumped ultraviolet laser emission at room temperature. This paper discussed the theoretical mechanism of excitonic radiative recombination in relation with the nanocrystal structure on ZnO film ultraviolet laser research. It is concluded that the experimental results are consistent with the theoretical analysis."
}
@article{tagkey2004IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "IFC - ",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00347-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003471",
key = "tagkey2004IFC"
}
@article{Benda2004223,
title = "Advances in power semiconductor devices",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "223 - ",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00184-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001848",
author = "Vitezslav Benda and E.M. Sankara Narayanan"
}
@article{Dan2004225,
title = "Advanced power semiconductors and ICs for DC/DC converter applications",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "225 - 233",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00185-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300185X",
author = "Dan and Kinzer",
keywords = "Power MOSFET",
keywords = "DC/DC converter",
keywords = "Voltage regulator modules",
keywords = "Controller",
keywords = "PWM",
abstract = "This paper describes recent advances in power semiconductor devices, integrated circuits, and packages for DC/DC converter applications. Special emphasis is placed on the latest discrete power MOSFET devices and packages. Features and trends in ICs for control of synchronous buck converters are highlighted as well. The paper will also cover a new class of miniaturized hybrid assembly that sets new efficiency standards for high current low output voltage applications."
}
@article{SankaraNarayanan2004235,
title = "Progress in MOS-controlled bipolar devices and edge termination technologies",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "235 - 248",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00186-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001861",
author = "E.M. Sankara Narayanan and O. Spulber and M. Sweet and J.V.S.C. Bose and K. Verchinine and N. Luther-King and N. Moguilnaia and M.M. De Souza",
keywords = "Insulated gate bipolar transistor",
keywords = "Semiconductor",
keywords = "Thyristors",
abstract = "An overview of the recent developments in high-voltage power semiconductor MOS-controlled bipolar devices is presented. The Insulated Gate Bipolar Transistor (IGBT) technology is explored from its initial stage up to the latest state-of-the-art developments, in terms of cathode engineering, drift design and anode engineering to highlight the different approaches used for optimisation and the achieved trade-offs. Further, several MOS-gated thyristors, which are aimed to replace the IGBT, are analysed. Moreover, the present paper reviews the various approaches in the fabrication of edge termination used in power device MOS-controlled bipolar devices."
}
@article{Hazdra2004249,
title = "Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "249 - 257",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00194-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001940",
author = "P. Hazdra and J. Vobecký and H. Dorschner and K. Brand",
keywords = "Lifetime control",
keywords = "Silicon",
keywords = "Irradiation",
keywords = "Protons",
keywords = "Alphas",
keywords = "Electrons",
keywords = "Power diodes",
abstract = "Local lifetime control by proton and alpha-particle irradiation with energies from 1.8 to 12.1 MeV and doses up to 5×1012 cm−2 was faced with two types of electron irradiation giving the different profiles of carrier lifetime: the high-energy (4 MeV) resulting in a homogeneous lifetime distribution and the low-energy (500 and 460 keV) providing so-called sloping lifetime control. Deep and shallow levels introduced by irradiation were characterised by DLTS, HVCTS and C–V profiling and their effect on static and dynamic parameters of irradiated diodes was measured and simulated. The advantages and drawbacks of different lifetime control techniques are compared and their application aspects are discussed, as well."
}
@article{Siemieniec2004259,
title = "Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "259 - 267",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00191-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001915",
author = "Ralf Siemieniec and Josef Lutz",
keywords = "Lifetime control",
keywords = "Irradiation",
keywords = "Recombination",
keywords = "Simulation",
keywords = "Fast recovery diode",
keywords = "Impatt oscillation",
abstract = "Device simulation, based on an extended recombination model, is used as a design tool for lifetime-controlled power diodes with different lifetime profiles. Homogenous and local recombination center profiles are considered. The sensitivity of important device properties, such as the trade-off between stationary and dynamical characteristics, to the recombination center peak position is investigated. The occurrence of dynamic impatt oscillations is analyzed."
}
@article{Vellvehı́2004269,
title = "Design considerations for 6.5 kV IGBT devices",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "269 - 275",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00188-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001885",
author = "M. Vellvehı́ and D. Flores and X. Jordà and S. Hidalgo and J. Rebollo and L. Coulbeck and P. Waind",
keywords = "High Voltage IGBT",
keywords = "ON-state resistance",
keywords = "Fast Recovery Diode",
abstract = "This article addresses the design of an optimal cell suitable for 6.5 kV Insulated Gate Bipolar Transistor (IGBTs). Simulations of the layout optimisation and process technology considerations for the 6.5 kV IGBT basic cell are presented. The simulation led directly to a monitor chip with several variant IGBT test structures, which has been fabricated and characterised. As a result, a large area 6.5 kV IGBT and FRD has been designed, fabricated and characterised as a 200 A power module with Vcesat=4 V at 25 °C and switching from 4.4 kV at 125 °C, exhibiting excellent electrical performance."
}
@article{Bourennane2004277,
title = "A new triggering mode in a vertical bi-directional MOS-thyristor device",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "277 - 285",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00189-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001897",
author = "A. Bourennane and M. Breil and J.-L. Sanchez and P. Austin and J. Jalade",
keywords = "Power semiconductor devices",
keywords = "Bi-directionality",
keywords = "Triac",
keywords = "AC switch",
keywords = "Association MOS-thyristor",
abstract = "A new mode of triggering in a bi-directional MOS-thyristor device is described and its operating modes are verified using 2D numerical simulations. This device is a vertical MOS controlled bi-directional structure that can be used as an AC switch for mains applications. It uses a P+ wall that extends from the top surface to the bottom of the wafer and ensures, in addition to blocking anode voltages, the turn-on of the device in the third quadrant of operation by using a lateral IGBT. This device has the advantage of being controlled by MOS and it requires a technological process fully compatible with that of the IGBT for its realization. Moreover, a description of most of the proposed devices to be used as AC switches is given in this paper in order to highlight the major difficulties encountered in designing MOS-gated bi-directional switches."
}
@article{Hong2004287,
title = "Optimum design for minimum on-resistance of low voltage trench power MOSFET",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "287 - 289",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00193-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001939",
author = "Ji-Hoon Hong and Sang-Koo Chung and Yearn-Ik Choi",
keywords = "Trench MOSFET",
keywords = "Trench width",
keywords = "On-resistance",
abstract = "An optimum trench width for the minimum on-resistance of a trench MOSFET (T-MOS) is determined analytically with the resistance contribution from the accumulation layer taken into account. Inclusion of the accumulation resistance is shown to be indispensable to the on-resistance of the T-MOS especially for a relatively large value of the trench width. The analytical results show a fair agreement with the numerical simulations using ATLAS."
}
@article{Roig2004291,
title = "Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "291 - 297",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00187-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001873",
author = "J. Roig and D. Flores and S. Hidalgo and J. Rebollo and J. Millan",
keywords = "Silicon-on-sapphire",
keywords = "Silicon-on-insulator",
keywords = "LDMOS",
keywords = "RF",
keywords = "Power amplifier",
abstract = "This work is addressed to the investigation of the electro-thermal performance of RF-LDMOS transistors integrated in TF-SOI, TF-SOS and thinned TF-SOS substrates by means of numerical simulations. Reported experimental trap density, carrier mobility and capture cross-section values have been used together with sapphire datasheet thermal properties, in order to provide accurate simulation results. It is found that subthreshold characteristics are the same for all the analysed substrates while blocking-state, on-state and power dissipation process depends on the substrate type."
}
@article{Park2004299,
title = "High-voltage lateral trench gate SOI-LDMOSFETs",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "299 - 304",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00192-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001927",
author = "J.M. Park and R. Klima and S. Selberherr",
keywords = "High-voltage devices",
keywords = "SOI-LDMOSFETs",
keywords = "Lateral trench gate",
keywords = "Simulation",
abstract = "We present a lateral trench gate SOI-LDMOSFET that uses narrow trenches as channels. The lateral trench gate, which allows the channel current to flow laterally on the trench side walls, decreases its on-resistance because it increases the current spreading area of the device. The specific on-resistance (Rsp) strongly depends on the trench depth, which affects the channel area on the side wall of the trench and the space between the trenches affects the channel density of the device. The Rsp of the suggested devices as a function of the lateral trench depth and the space between the trenches are studied. Three-dimensional numerical simulations with MINIMOS-NT have been performed to investigate the influence of device parameters on the Rsp and the breakdown voltage. The improvement in the current handling capability of the suggested device is about 8.3% compared to the conventional SOI-LDMOSFET."
}
@article{Hardikar2004305,
title = "A novel double RESURF LDMOS for HVIC's",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "305 - 310",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00190-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001903",
author = "S. Hardikar and M.M. De Souza and Y.Z. Xu and T.J. Pease and E.M. Sankara Narayanan",
keywords = "High-voltage",
keywords = "Double RESURF",
keywords = "LDMOS",
keywords = "CMOS",
abstract = "The viability of a fully implanted double RESURF technology using a linearly varying doping of p-layer at the surface [Electron. Lett. 32 (12) (1996) 1092–1093] is demonstrated for the first time. Incorporating such a layer allows the drift region charge to be doubled without degradation of breakdown voltage. Experimental results of a high-voltage LDMOS in such a technology show a reduction in the on-resistance by one-half of that of a conventional RESURF based structure."
}
@article{Karim2004311,
title = "High voltage amorphous silicon TFT for use in large area applications",
journal = "Microelectronics Journal",
volume = "35",
number = "3",
pages = "311 - 315",
year = "2004",
note = "6Th International Seminar on Power Semiconductors",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00196-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001964",
author = "K.S. Karim and P. Servati and A. Nathan",
keywords = "Amorphous silicon",
keywords = "Thin film transistor",
keywords = "Large area",
keywords = "High voltage",
abstract = "Previous work in high voltage amorphous silicon (a-Si) TFTs (HVTFTs) using an n+ μC–Si ohmic contact layer demonstrated that the soft contact TFT (SCTFT) design was a requirement for high voltage operation. In this research, conventional and high voltage TFT designs including the SCTFT are presented using an n+ a-Si contact layer. TFT ON-current measurements and series resistance extractions show that the conventional TFT performs equally well, if not better, at low and high voltages in comparison to all of the HVTFTs fabricated. The results indicate that the conventional space-efficient TFT design with an n+ a-Si contact layer is realizable for high fill-factor, high voltage applications such as direct detection, large area X-ray imaging. Also, the process reliability and performance for both conventional and HVTFT arrays can be improved for large area applications by the inclusion of an additional a-SiN layer."
}
@article{tagkey2004IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "IFC - ",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00336-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003367",
key = "tagkey2004IFC"
}
@article{Rodrı́guezCoppola2004103,
title = "The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "103 - 110",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003215",
author = "H. Rodrı́guez-Coppola and J. Tutor-Sánchez and J.R. Leite and L.M.R. Scolfaro and F. Garcı́a-Moliner",
keywords = "Absorption coefficient",
keywords = "Quantum dots",
keywords = "Photoluminescence",
keywords = "Quantum wells",
abstract = "The free carrier absorption coefficient of a low dimensional semiconductor system is formulated, with inclusion of interparticle Coulomb interaction, perturbatively, considering the bubble diagrams summed up to infinite order, which accounts for the multisubband (Q2D or Q1D case) or multilevel (Q0D case) electronic structure for reduced dimensionality. The experimental photoluminescence spectrum of a quantum dot of InGaN is used to estimate indirectly, through the absorption coefficient, the length of the side of the cube, which seems to be the geometry of the dots obtained in recent experiments. The results are consistent with other, independent, measurements."
}
@article{Fu2004111,
title = "A novel harmless trimming for micro-device with defects and particles in arbitrary geometry by fine milling of focused ion beam",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "111 - 115",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003227",
author = "Yongqi Fu and Zhongwei Shen and Ngoi Kok Ann Bryan",
keywords = "Focused ion beam",
keywords = "Trimming",
keywords = "Micro-device",
keywords = "Selective milling",
abstract = "A novel method combining focused ion beam (FIB) milling and image processing for fine trimming of micro-device is introduced in detail in this paper. By using small beam spot size and beam current, selective milling can be realized according to requirement in terms of the difference of gray scale color intensity between defects and useful areas of the FIB images. A magnetoresistive head and ink jet spray head of color printer trimming were described as examples. Trimming result shows that the method is practical and suitable for the fine trimming of micro-device by the selective milling."
}
@article{Guo2004117,
title = "Properties of wurtzite GaN MESFETs studied by two-dimensional full band Monte Carlo approach",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "117 - 123",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003239",
author = "Baozeng Guo and Umberto Ravaioli and Dengyuan Song",
keywords = "Monte carlo simulation",
keywords = "Metal–semiconductor field effect transistor",
keywords = "Gallium nitride",
abstract = "The properties of a GaN Metal–Semiconductor Field Effect Transistor were studied based on two-dimensional full band Monte Carlo simulations. The dependences of the distributions of the electric potential, electron concentration, electric field, drift velocity, and average electron energy on the gate–source voltage (VGS) and drain–source voltage (VDS) were obtained, then the characteristics of the drain current (IDS) versus the drain–source voltage (VDS) and the transconductance (Gm) versus VGS characteristics were determined. At VDS=15 V and VGS=0 V, IDS is 5.03 A/cm, which is higher value. The Gm−VGS curve shows bell shaped and the maximum Gm is 112 ms/mm at VDS=15 V and VGS=1.5 V. The current gain cutoff frequency (fT) is 98 GHz at VDS=15 V and VGS=0 V."
}
@article{Chen2004125,
title = "Study of the long-wavelength optic phonons in AlGaInP and AlGaInAs",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "125 - 130",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.004",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002970",
author = "Lianhui Chen and Guanghan Fan and Yaoyong Meng",
keywords = "Optic phonons",
keywords = "AlGaInP",
keywords = "AlGaInAs",
abstract = "The investigation of the lattice dynamics of (AlxGa1−x)yIn1−yP quaternary semiconductor alloys lattice matched to GaAs has been made by Raman scattering. The Raman spectra exhibit three-mode behavior depending on the composition. A modified random element isodisplacement (MREI) model is generalized to the III–V (AxB1−x)1−yCyD-type quaternary alloys, describing the behavior of the optical phonons. The calculated result of two quaternary mixed crystals, (AlxGa1−x)yIn1−yP and (AlxGa1−x)yIn1−yAs, is in good agreement to the experimental data."
}
@article{Malek2004131,
title = "Applications of LIGA technology to precision manufacturing of high-aspect-ratio micro-components and -systems: a review",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "131 - 143",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002957",
author = "Chantal Khan Malek and Volker Saile",
keywords = "LIGA",
keywords = "3D-micromachining",
keywords = "High-aspect-ratio",
keywords = "Micromechanics",
keywords = "Microoptics",
keywords = "Microfluidics",
abstract = "The by far leading technology for manufacturing MEMS devices is Si-micromachining with its various derivatives. However, many applications of microsystems have requirements on materials basis, geometry, aspect ratio, dimensions, shape, accuracy of microstructures, and number of parts that cannot be fulfilled easily by mainstream silicon-based micromachining technologies. LIGA, an alternative microfabrication process combining deep X-ray lithography, plating-through-mask and molding, enables the highly precise manufacture of high-aspect-ratio microstructures with large structural height ranging from hundreds to thousands of micrometers thick. These tall microstructures can be produced in a variety of materials with well-defined geometry and dimensions, very straight and smooth sidewalls, and tight tolerances. LIGA technology is also well suited for mass fabrication of parts, particularly in polymer.
Many microsystems benefit from unique characteristics and advantages of the LIGA process in terms of product performance. The LIGA technology is briefly reviewed. The strengths of the manufacturing method and its main fields of application are emphasized with examples taken from various groups worldwide, especially in micromechanics and microoptics."
}
@article{Rong2004145,
title = "Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "145 - 149",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002945",
author = "Yang Rong and Luo Jinsheng and Tu Jing and Zhang Ruizhi",
keywords = "Strained SiGe",
keywords = "PMOSFET",
keywords = "Quantum mechanics effects",
keywords = "Simulation",
keywords = "Analysis",
abstract = "By employing the semiconductor device 2D simulator Medici, the inversion layer quantum mechanics effects (QME) in the strained SiGe-channel PMOSFET are studied. The influences of the inversion layer QME on the channel hole sheet density, the surface potential, the electric field and the threshold voltage in strained SiGe PMOS and Si PMOS are simulated and compared. It is theoretically predicted and validated by the numeric simulation results that QME lead to much difference in device performance between SiGe PMOS and Si PMOS. This study shows that SiGe PMOS suffers less disadvantageous influence when compared with Si PMOS, in ultra-deep submicron dimension, where QME are becoming increasingly more important."
}
@article{Msir2004151,
title = "Design of a high speed parallel encoder for convolutional codes",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "151 - 166",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.016",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002969",
author = "A. Msir and F. Monteiro and A. Dandache and B. Lepley",
keywords = "Convolutional error correcting codes",
keywords = "Parallel and pipelined encoder architectures",
keywords = "High speed FPGA implementations",
keywords = "Telecommunication applications",
abstract = "This paper presents the design of high speed parallel architectures for convolutional encoders and its implementation on FPGA devices. Convolutional codes are widely used in telecommunication applications to improve the data transmission reliability over noisy chanels.
The architecture proposed here combines parallel and pipelining techniques. A purely parallel approach can increase the number of processed bits per clock cycle. Unfortunately, the critical path propagation delay increases with the parallelism level. Consequently, the operating clock frequency decreases which in turn can dramatically limit the benefit of parallelization. This drawback can be significantly reduced using pipelining techniques. As a result, the critical path depends no more on the parallelism level.
The encoder architectures have been implemented on FPGA devices of the Altera Flex10KE family. Bit rates up to 6.61 Gbits/s have been achieved on 32-bit parallel implementations."
}
@article{Heitzinger2004167,
title = "On the simulation of the formation and dissolution of silicon self-interstitial clusters and the corresponding inverse modeling problem",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "167 - 171",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.014",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002921",
author = "Clemens Heitzinger and Siegfried Selberherr",
keywords = "Silicon self-interstitial clusters",
keywords = "Diffusion processes",
keywords = "Inverse problems",
abstract = "The formation and dissolution of silicon self-interstitial clusters is linked to the phenomenon of transient-enhanced diffusion (TED) which in turn has gained importance in the manufacturing of semiconductor devices. Based on theoretical considerations and measurements of the number of self-interstitial clusters during a thermal step, a model for the formation and dissolution of self-interstitial clusters is presented including the adjusted model parameters for two different technologies (i.e. material parameter sets). In order to automate the inverse modeling part, a general optimization framework was used. In addition to solving this problem, the same setup can solve a wide range of inverse modeling problems occurring in the domain of process simulation. Finally, the results are discussed and compared with a previous model."
}
@article{Guimarães2004173,
title = "Single-electron winner-take-all network",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "173 - 178",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.015",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002933",
author = "J.G. Guimarães and H.C. do Carmo and J.C. da Costa",
keywords = "Single-electron neuron",
keywords = "Winner-take-all",
keywords = "Nanoelectronics",
keywords = "GSI processor",
abstract = "A winner-take-all (WTA) single-electron neuron is developed for the first time. This new single-electron circuit is proposed in order to implement a WTA neural network with lateral inhibition architecture. An expression for the neuron's activation function is presented. Furthermore, a dot pattern recognition task is successfully performed by the implemented network considering effects such as offset charges and co-tunnelling."
}
@article{Rebey2004179,
title = "Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "179 - 184",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.10.001",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300291X",
author = "A Rebey and M.M Habchi and Z Benzarti and B El Jani",
keywords = "GaAs/Ge structure",
keywords = "Growth parameters",
keywords = "Roughness",
keywords = "Laser reflectometry",
keywords = "Metalorganic vapor phase epitaxy",
abstract = "Metalorganic vapor phase epitaxy (MOVPE) of GaAs on Ge substrate has been studied by laser reflectometry (LR) with 632.8 nm laser beam. The layers were grown by varying substrate temperature and the V/III ratio. The relative difference between refractive index of film and substrate results in pronounced easily detected interference oscillations in the reflected beam intensity. The oscillations period provides an accurate and immediate measure of growth rate. In addition, the variations of extrema of oscillations and the average value of reflectance provide an estimate of the quality and surface roughness. A procedure for quantifying the roughening observed during the in situ LR monitoring of growth was presented. Furthermore, the measured interference effects were analyzed by calculating the reflectance. In order to explain the reflectometry behavior, the film was also characterized by X-ray diffraction and scanning electronic microscopy."
}
@article{Symko2004185,
title = "Design and development of high-frequency thermoacoustic engines for thermal management in microelectronics",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "185 - 191",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.017",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002908",
author = "O.G. Symko and E. Abdel-Rahman and Y.S. Kwon and M. Emmi and R. Behunin",
keywords = "Heat management",
keywords = "Thermoacoustic",
keywords = "Miniaturization",
keywords = "Acoustic heat pump",
keywords = "Engine",
abstract = "Thermoacoustic heat engines provide a practical solution to the problem of heat management in microcircuits where they can be used to pump heat or produce spot cooling of specific circuit elements. There are basically two types of thermoacoustic engines, a prime mover where heat is converted to acoustic energy, and a heat pump or cooler where sound can pump heat up a temperature gradient. Such devices are relatively simple, they can be efficient, and they are readily adaptable to microcircuit interfacing. Since this type of engines is usually operated in a resonant mode, the operating frequency determines its size. The devices presented here are pumped at frequencies ranging from 4 to 24 kHz. They have been developed for interfacing with microcircuits as heat pumps or spot coolers. Results of their performance are presented and suggestions for further improvements are discussed."
}
@article{Lee2004193,
title = "Modelling of binary phase modulation in surface stabilized ferroelectric liquid crystal spatial light modulators",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "193 - 201",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.006",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002775",
author = "Yongmin. Lee and J. Gourlay and W.J. Hossack and I. Underwood and A.J. Walton",
keywords = "Phase modulation",
keywords = "Ferroelectric liquid crystal",
keywords = "HSpice model",
abstract = "Modelling of binary phase modulation is required for optimal performance of ferroelectric liquid crystals (FLC) on silicon SLMs when used in coherent optical systems. This paper presents a modelling technique by which an HSpice model can be provided for characterization of phase modulation properties for designing FLC-on-silicon SLMs. The simulation and experimental measurements of phase modulation are described. For the theoretical model simulation, FLC parameter measurements are described. We experimentally verify the modelled prediction of phase modulation by investigating reflective FLC test cells. We have shown reasonable agreement within 9% between the measured and simulated values of phase modulation."
}
@article{Ryu2004203,
title = "Monolithic integration of thin film μ-heater array with 4-channel WDM transmitter",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "203 - 206",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.009",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002714",
author = "Sang-Wan Ryu and Sung-Bock Kim and Jae-Sik Sim and Yong-Duck Chung and Jong-Hyun Lee and Jeha Kim",
keywords = "Multi-wavelength laser array",
keywords = "μ-Heater",
keywords = "Wavelength division multiplexing",
abstract = "We integrated a μ-heater array with a multi-wavelength laser array for accurate control of the channel spacing. A μ-heater array was formed on a 4-channel laser array with asymmetric sampled gratings. The lasers showed threshold current of 9–13 mA and slope efficiency of around 0.21 W/A. High side mode suppression ratio over 44 dB was observed as well. With the μ-heaters, all the laser wavelengths were precisely controlled simultaneously. The laser wavelength was red shifted with the μ-heater and the tuning efficiency was 3.3 nm/W. However, thermal crosstalk between neighboring channels was observed and it was measured to be 1.1 nm/W."
}
@article{Hellara2004207,
title = "Alloy broadening effect on optical properties of InGaAs grown by MOCVD with TMAs precursor",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "207 - 212",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.013",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002763",
author = "J. Hellara and F. Hassen and H. Maaref and H. Dumont and V. Souliere and Y. Monteil",
keywords = "Photoluminescence",
keywords = "Trimethylarsine",
keywords = "InGaAs",
abstract = "We investigate the MOCVD growth characteristic of the In0.47Ga0.53As layers lattice matched to InP using TMAs as an alternative source of arsine. Improvement of the InGaAs quality was studied by means of PL lines, the origin of photoluminescence (PL), atomic force microscopy. Low temperature PL spectra exhibit a broad this broadening was analyzed using quantitative models for the linewidth of band exciton based on compositional fluctuations within the crystal volume. This statistical fluctuation of the composition affects not only the PL line width but also structural properties of the InGaAs epilayer. Furthermore, by increasing V/III ratio, a degradation of the InGaAs optical and structural quality was observed."
}
@article{tagkey2004213,
title = "PatentsALERT",
journal = "Microelectronics Journal",
volume = "35",
number = "2",
pages = "213 - 221",
year = "2004",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00280-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002805",
key = "tagkey2004213"
}
@article{tagkey2004IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "IFC - ",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00313-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003136",
key = "tagkey2004IFC"
}
@article{Velasco20041,
title = "Preface for NANO' 2003 proceedings",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "1 - ",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00210-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002106",
author = "Victor R. Velasco and Joaquı́n Tutor and Mohamed Henini"
}
@article{Chico20043,
title = "Localized states in metallic carbon nanotube systems",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "3 - 5",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00211-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002118",
author = "L. Chico and W. Jaskólski",
keywords = "Carbon nanotubes",
keywords = "Quantum dots",
keywords = "Low dimensional systems",
abstract = "We have investigated the properties of purely metallic carbon nanotube systems made of a nanometer-size metallic island connected to another two metallic carbon nanotubes by means of topological defects. These structures present discrete energy levels, thus behaving as metallic quantum dots. When there is a symmetry gap between the matched tubes around the Fermi energy, the states are strongly localized in the central metallic section and completely uncoupled from the external nanotubes. Interestingly, we also find discrete states in structures made of metallic nanotubes without a common symmetry. In this case the states are actually resonances coupled to the leads continua."
}
@article{Garcı́a20047,
title = "In segregation effects during quantum dot and quantum ring formation on GaAs(001)",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "7 - 11",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00212-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300212X",
author = "Jorge M. Garcı́a and Daniel Granados and Juan Pedro Silveira and Fernando Briones",
keywords = "Quantum dot",
keywords = "Quantum ring",
keywords = "Molecular beam epitaxy",
abstract = "In segregation during InAs growth on GaAs(001) is studied using a real time, in situ technique capable of measuring sample accumulated stress. A 50% surface In segregation of liquid-like stress free matter is deduced. A picture of growth below critical thickness for quantum dot formation is discussed on the basis of the equilibrium between pseudomorphic InAs and liquid In dominated by the stress energy. Quantum rings are produced when large (>10 nm height) quantum dots are covered with 2 nm of GaAs cap. A formation mechanism of the rings is presented. The possibility of tailoring photoluminescence emission through control over size and shape is demonstrated."
}
@article{González200413,
title = "Stress evolution aspects during InAs/InP (001) quantum wires self-assembling",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "13 - 17",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00213-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002131",
author = "M.U. González and L. González and J.M. Garcı́a and Y. González and J.P. Silveira and F. Briones",
keywords = "Nanostructures",
keywords = "Self-assembling",
keywords = "Quantum wires",
abstract = "We report here in situ measurements of stress evolution during molecular beam epitaxy growth of InAs/InP (001) quantum wires. The obtained results provide the necessary information to understand why quantum wires instead of quantum dots are formed in this heteroepitaxial system: a strong stress anisotropy along 〈110〉 directions is responsible for it. Moreover, during quantum wires growth As/P exchange reactions take place, which determine the total amount of InAs incorporated in the nanostructures and then their optical properties. In situ stress measurements have also been used to study the exchange process and they have allowed us to calculate the quantity of InAs that enters into the lattice because of it."
}
@article{Creffield200419,
title = "Coherence and localization in AC-driven quantum dots",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "19 - 22",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00214-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002143",
author = "C.E. Creffield and G. Platero",
keywords = "Quantum dots",
keywords = "Coherence",
keywords = "Localization",
abstract = "We investigate the effects of an AC field on the dynamics of interacting electrons in quantum dots (QDs). We first consider a double QD containing two electrons. By mapping the system to an effective lattice model and employing Floquet theory we analyze the dynamics of the two-electron wavefunctions in the singlet space. This system presents a richer phenomenology than the case of a single electron in a double QD, displaying two distinct regimes of behaviour depending on whether the applied field strength or the inter-electron Coulomb repulsion is dominant. We then study the dynamics of two electrons in a 2D square QD in the limit of very low density, where the Coulomb interaction causes the electrons to become highly localized, forming a ‘Wigner molecule’. Using the same techniques we investigate how the AC field drives the dynamics of the Wigner states, and show how the parameters of the effective model may be measured in experiment."
}
@article{Zhang200423,
title = "Structural and dynamical disorder and charge transport in DNA",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "23 - 26",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00215-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002155",
author = "Wei Zhang and Sergio E. Ulloa",
keywords = "Molecular electronics",
keywords = "DNA",
keywords = "Correlated disorder",
keywords = "Twist polarons",
abstract = "DNA can be viewed as a one-dimensional chain composed of stacked base pairs, and the randomness of the pair sequence has important impact on charge transport. In this paper, we study a realistic DNA model, in which the on-site energies for the different bases are correlated to the hopping integrals between the different pairs. This correlation is a natural consequence of the microscopic structure, and we find it drastically enhances the transmission probability, even if the base pairs are distributed randomly. On the other hand, we show also that torsional motion along the DNA chain produces strong polaron effects that suppress the electronic motion. Comparison with experiments require then a full description of polarons in structural correlated systems."
}
@article{CamachoB200427,
title = "Optical effects based on intersub-band-transitions in quantum wells",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "27 - 31",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00222-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002222",
author = "A.S. Camacho B and J. Bohórquez and R.M. Gutiérrez and J.L. Carrillo",
keywords = "Quantum wells",
keywords = "Ultrafast light pulses",
keywords = "Electron–LO-phonon scattering rates",
keywords = "Absorption",
keywords = "Laser design",
abstract = "Unipolar devices based on intersub-band-transition have been developed in the last decade [Appl. Phys. Lett. 65 (1994) 2901]. However, this technique will not be directed applicable for the longer wavelengths corresponding to Tetrahertz frequencies. In this work we analyze a THz device based on the intersub-band-transitions of an asymmetric double quantum well. We first study the intersub-band optical absorption in superlattice made of asymmetric double quantum wells tailored as a three level system. By applying an external electric field we obtain the Wannier–Stark ladder and can tune the transition energies between the sub-bands to reach the THz absorption between the two excited sub-bands. Although the dipole moments are big, the relative THz absorption to the other frequencies is small. However, reported lifetimes for this system encourage the possibility of getting population inversion, which is the main condition to design a laser. With this goal, it is presented a detailed study of the geometric design of the asymmetric double quantum well by performing an accurate calculation of the energies and wave functions, the dipole moments and the electron–LO-phonon interaction form factors, which are important ingredients of the scattering rates results. Furthermore, we analyze the role of electron–LO-phonon scattering in THz devices."
}
@article{Iribarren200433,
title = "Estimation of drift mobility in InGaAsP semiconducting alloys from photoluminescence at 77 and 300 K",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "33 - 35",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00219-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002192",
author = "A. Iribarren and J.Fuentes Betancourt",
keywords = "Photoluminescence",
keywords = "Mobility",
keywords = "InGaAsP",
abstract = "In this work, we propose a method of calculation for estimating the drift mobility from photoluminescence (PL). The method is based on the difference between the temperature of the scattered carriers after thermalization and the lattice temperature. The effective carrier temperature TE was determined experimentally by fitting the high-energy region of PL spectra. The total mobility is obtained from the mobility calculated for different scattering mechanisms and the application of the Matthiessen rule. The method was used on InGaAsP semiconducting alloys grown by liquid phase epitaxy. The calculated mobility values for different InGaAsP samples agree with those reported for these alloys."
}
@article{Mirabal200437,
title = "Synthesis, functionalization, and properties of intercalation compounds",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "37 - 40",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00220-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002209",
author = "N. Mirabal and V. Lavayen and E. Benavente and M.A. Santa Ana and G. González",
keywords = "Intercalation compounds",
keywords = "Anisotrope",
keywords = "Surfactants",
abstract = "Layered compounds are nanostructured, intrinsically anisotropic materials which often undergo intercalation reactions producing host–guest complexes. In this work examples from the molybdenum disulfide chemistry are used for discussing how the properties of the products may be regulated by appropriate selection of the guests species used for functionalizing the pristine sulfide. Special attention is given to new intercalates based in the intercalation of surfactants, which under special conditions may act as template promoting the conversion of the layered products into micro and nanotubes. The form how this kind of surfactants may be used for obtaining laminar derivatives of cadmium disulfide with the sulfide in a confined state is also described."
}
@article{MaregaJr200441,
title = "Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "41 - 43",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00221-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002210",
author = "E. Marega Jr. and R.M. Oliveira and C. Ade Souza and H. Arakaki and P.P. González-Borrero",
keywords = "(GaAs)5/(AlAs)5 superlattice",
keywords = "(311)A-oriented semi-insulating substrate",
keywords = "Molecular beam epitaxy technique",
abstract = "We present a temperature-dependence photoluminescence of (GaAs)5/(AlAs)5 superlattice grown on (311)A-oriented semi-insulating substrate by molecular beam epitaxy. The temperature dependence reveals an anomalous decrease of the PL width, which is explained in terms of phonon-assisted thermal activation of localized excitons."
}
@article{Martı́nPalma200445,
title = "Porous silicon multilayer stacks for optical biosensing applications",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "45 - 48",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00216-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002167",
author = "R.J. Martı́n-Palma and V. Torres-Costa and M. Arroyo-Hernández and M. Manso and J. Pérez-Rigueiro and J.M. Martı́nez-Duart",
keywords = "Porous silicon multilayer",
keywords = "Optical filters",
keywords = "Multilayer biosensors",
abstract = "Porous silicon (PS) multilayer stacks were developed for their use as interference filters in the visible range. The optical behavior of these structures was previously simulated by the use of a computational program, from which the optical constants and thickness of the individual PS layers were determined. The possibility of using these structures as biosensors has been explored, based on the significant changes in the reflectance spectra before and after exposing the PS multilayer to proteins (antibodies). In particular, it is shown that there is a notably reduction of reflectance from PS structures when this material is exposed to polyclonal mouse antibodies. Thus, the experimental results open the possibility of developing biosensors based on the variation of the shape and/or position of the optical or photoluminescent spectrum from PS."
}
@article{DiagoCisneros200449,
title = "Interesting coupling phenomena of heavy and light holes in a (GaAs/AlAs)n superlattice",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "49 - 51",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00217-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002179",
author = "L. Diago-Cisneros and H. Rodrı́guez-Coppola and R. Pérez-Álvarez and P. Pereyra",
keywords = "Hole tunneling",
keywords = "Scattering theory",
keywords = "Transfer matrix",
abstract = "An appropriate combination of the scattering theory and the transfer matrix formalism, for the solution of a (4×4) Kohn–Lüttinger model, allow us to study the multichannel-multiband transmission process of heavy and light holes through a (GaAs/AlAs)n superlattice. Appealing effects and interesting channel coupling phenomena, mediated by quasi-bond states, are clearly foreseen."
}
@article{Teles200453,
title = "Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "53 - 57",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00218-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002180",
author = "L.K. Teles and M. Marques and L.G. Ferreira and L.M.R. Scolfaro and J.R. Leite",
keywords = "Biaxial strain",
keywords = "Optoelectronic devices",
keywords = "Group-III nitrides",
abstract = "The thermodynamics as well as the energetics and the structural properties of cubic group-III nitrides alloys have been investigated by combining first-principles total energy calculations and cluster expansion methods. In particular results are shown for the ternary InxGa1−xN and the quaternary AlxGayIn1−x−yN alloys. Phase separation is predicted to occur at growth temperatures, for both fully relaxed alloys. A remarkable influence of an external biaxial strain on the phase separation, with the formation of ordered phase structures has been found for the InGaN alloy. These findings are used to clarify the origin of the light emission process in InGaN-based optoelectronic devices. Results are shown for the composition dependence of the lattice constant and of the energy gap in quaternary AlxGayIn1−x−yN alloys."
}
@article{Domı́nguezAdame200459,
title = "Spectroscopic ellipsometry of intentionally disordered superlattices",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "59 - 61",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00223-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002234",
author = "F. Domı́nguez-Adame and R. Hey and V. Bellani and G.B. Parravicini and E. Diez",
keywords = "Photoluminescence",
keywords = "Superlattices",
keywords = "Ellipsometry",
abstract = "We characterized the electronic properties of ordered and intentionally disordered GaAs–AlxGa1−xAs superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry in the near band-edge region. The spectra have been compared to the calculate electronic structure. The optical transitions in the various superlattices show specific features related to their different electronic structure."
}
@article{AlexysBruno200463,
title = "Wannier-function approach to electron states in superlattices under an electric field",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "63 - 64",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00235-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002350",
author = "Alexys Bruno- and Alfonso",
keywords = "Superlattice",
keywords = "Electric field",
keywords = "Wannier–Stark",
keywords = "Wannier-function",
abstract = "Electron quasi-stationary states in a periodic semiconductor superlattice are calculated, as linear combinations of Wannier–Kohn functions, for different values of an electric field applied along the heterostructure. A comparison with an alternative approach, which is based on the localization of quasi-stationary states, is performed."
}
@article{Dı́az200465,
title = "Optical properties of silicon rich silicon oxides obtained by PECVD",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "65 - 67",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00224-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002246",
author = "B. Dı́az and J.A. Rodrı́guez and M. Riera and A. Llobera and C. Domı́nguez and J. Tutor",
keywords = "Optical properties",
keywords = "Refractive index",
keywords = "Plasma enhanced chemical vapor deposition",
abstract = "In this work optical properties of SiOX (0<X<2) layers obtained by plasma enhanced chemical vapor deposition are studied. Infrared spectra and refractive index dependences with the reactant gases flow ratio R are explained for as deposited, aged and thermally treated samples in the R range from 9.17 to 110. Variations are found to be influenced mainly by sample stoichiometry, density and Si–OH bonds concentration."
}
@article{Jimenez200469,
title = "Nanostructures for chemical recognition using ISFET sensors",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "69 - 71",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00225-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002258",
author = "C. Jimenez and S. Rochefeuille and R. Berjoan and P. Seta and J.P. Desfours and C. Dominguez",
keywords = "Langmuir–Blodgett monolayers",
keywords = "Ion selective field effect transistors",
keywords = "Nanostructures characterization",
abstract = "The application of Langmuir–Blodgett (LB)-fabricated nanostructures on Ion selective Field Effect Transistors (ISFET) is of great interest since it permits the combination of a micro-scale device with a nanoscale material. In this article, the optimization of a LB-monolayer for calcium and sodium detection is carried out by characterization with XPS and AFM techniques, followed by electrochemical characterisation onto ISFET sensors. Physico-chemical modifications of the surface and good cation complexation of the ionophores fixed in the monolayers were observed with XPS studies. AFM images showed the presence of a unhomogeneous layer all over the ISFET surface. The electrochemical response of those monolayers onto ISFETs demonstrated the feasibility of this technology for sensor membrane fabrication and it opens further studies for other kind of devices such as optochemical sensors."
}
@article{Fernandez200473,
title = "Near band-edge optical properties of cubic GaN with and without carbon doping",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "73 - 77",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00226-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300226X",
author = "J.R.L. Fernandez and F. Cerdeira and E.A. Meneses and J.A.N.T. Soares and O.C. Noriega and J.R. Leite and D.J. As and U. Köhler and D.G.P. Salazar and D. Schikora and K. Lischka",
keywords = "Carbon doping",
keywords = "Photoluminescence",
keywords = "Photoluminescence excitation",
abstract = "We report the results of studying the optical properties of cubic GaN thin films with photoluminescence and photoluminescence excitation spectroscopies. The films are deposited by plasma-assisted molecular beam epitaxy on GaAs (001) substrates, with and without intentional doping with carbon atoms (p-type doping). The evolution of the optical spectra of the C-doped samples is consistent with a picture in which carbon enters into N-vacancies at low concentrations, producing a marked improvement in the crystalline properties of the material. At higher concentrations it begins to form complexes, possibly due to interstitial occupation. The temperature dependence on the absorption edge of the doped material is also measured and is analyzed with standard theoretical models."
}
@article{Marı́200479,
title = "Optical properties of nanocolumnar ZnO crystals",
journal = "Microelectronics Journal",
volume = "35",
number = "1",
pages = "79 - 82",
year = "2004",
note = "3rd Ibero American workshop on Nanostructures for applications to Micro and Optoelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00227-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002271",
author = "B. Marı́ and M. Mollar and A. Mechkour and B. Hartiti and M. Perales and J. Cembrero",
keywords = "Zinc oxide",
keywords = "Electrodeposition",
keywords = "Nanocolumns",
keywords = "Exciton",
keywords = "Photoluminescence",
keywords = "Optical devices",
abstract = "Oriented nanocolumnar ZnO single crystals were prepared by the electrodeposition technique on conducting glass substrates by using different growth parameters. A factorial design at two levels of three growth parameters such as current density, exposition time and temperature of the bath has been used to study their influence on the height of ZnO columns. The average height of the Zn nanocolumns was obtained by means of atomic force microscopy. X-ray diffraction and scanning electron microscope were used to characterize the morphology of the nanocolumnar ZnO crystals. The optical properties were investigated by means of transmittance and photoluminescence. It was found that further annealing of the electrodeposited samples was necessary in order to achieve good optical properties which are very sensitive to the duration and temperature of the annealing."
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "IFC - ",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00299-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002994",
key = "tagkey2003IFC"
}
@article{Marta20031113,
title = "Thermal investigations of integrated circuits and systems at THERMINIC'02",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1113 - 1114",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00199-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300199X",
author = "Marta and Rencz"
}
@article{Komarov20031115,
title = "Transient thermo-reflectance measurements of the thermal conductivity and interface resistance of metallized natural and isotopically-pure silicon",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1115 - 1118",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00201-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002015",
author = "Pavel L. Komarov and Mihai G. Burzo and Gunhan Kaytaz and Peter E. Raad",
keywords = "Transient thermoreflectance method",
keywords = "Epitaxial layer",
keywords = "Natural silicon",
keywords = "Isotopically-pure silicon-28",
keywords = "Boron doping",
keywords = "Thermal conductivity",
abstract = "The transient thermoreflectance method has been used to measure the thermal conductivity of natural silicon and isotopically-pure silicon-28 layers that are epitaxially grown on natural silicon substrates. The measurements were performed at room temperature for both a low level (1016) and a higher level (2×1019) of Boron doping of the epitaxial layers. The results indicate a gain of approximately 55% in the thermal conductivity of Si28 as compared to that of natural Si, at both low and higher levels of doping, and a loss of approximately 19% for both types of silicon due to the higher level of doping."
}
@article{Maliński20031119,
title = "A modified approach to the analysis of piezoelectric photothermal spectra",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1119 - 1128",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00202-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002027",
author = "Mirosław Maliński and Tetsuo Ikari",
keywords = "Piezoelectric photothermal spectroscopy",
keywords = "Thermal and optical characterization",
abstract = "In this paper a modified approach to the problem of interpretation of the piezoelectric photothermal (PPT) spectra is presented. The theory includes computations of the temperature distributions in the samples i.e. the instantaneous temperature, temperature amplitude and phase distributions obtained from the presented temperature distribution equation. Application of the modified Jackson and Amer equation resulted in computations of the amplitude and phase spectra of the piezoelectric signals as a function of the photon energy of the exciting light. The computations of the PPT spectra carried out for the series of semiconductor materials, such as GaAs, InSe and p and n-type Si, led to the new interpretation of the peaks, dips and humps observed in experiments. The inactive layer model and its influence on the interpretation of the PPT spectra is presented and discussed."
}
@article{Meunier20031129,
title = "Realization and simulation of wall shear stress integrated sensors",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1129 - 1136",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00203-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002039",
author = "Delphine Meunier and Sedat Tardu and Dimitrios Tsamados and Jumana Boussey",
keywords = "MEMS",
keywords = "Wall hot film and pressure micro-sensors",
keywords = "Micro-wire over cavity",
keywords = "Numerical simulation",
keywords = "Heat transfer",
abstract = "In this paper we present the impact of hot wire geometry and fluid characteristics on the efficiency of a hot wire to be used as a wall shear stress sensor. Finite differences and finite elements modelling based simulators were used in order to evaluate the thermal performances of hot wire wall shear stress sensor. Several structures were explored including simple conductor or suspended above a cavity (free and sealed with an oxide membrane). It is found out that wire length, wire section and the dimensions of the micro-cavity lying below the hot wire are of fundamental importance on the thermal exchanges occurring between the hot wire and the fluid."
}
@article{Cordero20031137,
title = "Thermal modelling of Ohmic heating microreactors",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1137 - 1142",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00204-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002040",
author = "Nicolás Cordero and Jonathan West and Helen Berney",
keywords = "Microreactor",
keywords = "Micromachining",
keywords = "Ohmic heating",
keywords = "Joule effect heating",
keywords = "Thermal modelling",
keywords = "Thermal simulation",
keywords = "Transient thermal modelling",
abstract = "This paper describes the static and transient thermal modelling of an Ohmic heating microreactor for biological sample processing for the purpose of genetic analysis. Precise thermal management can be used for the effective preparation of analyte DNA molecules prior to detection. Due to the small dimensions of the microreactor, the direct measurement and monitoring of the temperature distribution presents a challenge. To overcome this, thermal modelling has been used to accurately predict the thermal behaviour of the microreactor and sample component. It is further possible to calculate the required input power levels and provide design criteria to optimise the design of the microreactor."
}
@article{Carubelli20031143,
title = "Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1143 - 1151",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00205-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002052",
author = "S. Carubelli and Z. Khatir",
keywords = "Thermal modelling",
keywords = "Multichip power device",
keywords = "Temperature measurements",
keywords = "Compact model",
keywords = "Electrothermal simulation",
abstract = "In this paper, we present an implementation of a thermal modelling method applied to a multichip module used as a power converter. Analytical functions of thermal impedances, with original formulations for the mutuals are defined. They are derived from 3D thermal simulations and experimental validations with direct chips temperature measurements. Finally, simulations are performed in order to improve the capability of our model to assess, with fast computation, the thermal constraints applied on the multichip module in a real operating condition."
}
@article{Stan20031153,
title = "HotSpot: a dynamic compact thermal model at the processor-architecture level",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1153 - 1165",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00206-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002064",
author = "Mircea R. Stan and Kevin Skadron and Marco Barcella and Wei Huang and Karthik Sankaranarayanan and Sivakumar Velusamy",
keywords = "Thermal models",
keywords = "Dynamic compact models",
keywords = "Computer architecture",
abstract = "This paper describes a thermal-modeling approach that is easy to use and computationally efficient for modeling thermal effects and thermal-management techniques at the processor architecture level. Our approach is based on modeling thermal behavior of the microprocessor die and its package as a circuit of thermal resistances and capacitances that correspond to functional blocks at the architecture level. This yields a simple compact model, yet heat dissipation within all major functional blocks and the heat flow among blocks and through the package are accounted for. The model is parameterized, boundary- and initial-conditions independent, and is derived by a structure assembly approach. The architecture community has demonstrated growing interest in thermal management, but currently lacks a way to model on-chip temperatures in a tractable way. Our model can be used for initial exploration of the design space at the architecture level. The model can easily be integrated into popular power/performance simulators, can be used to determine how thermal stress is correlated to the architecture, and how architecture-level design decisions influence thermal behavior and related effects."
}
@article{Koziel20031167,
title = "Reducing average and peak temperatures of VLSI CMOS circuits by means of evolutionary algorithm applied to high level synthesis",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1167 - 1174",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00207-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002076",
author = "Slawomir Koziel and Wladyslaw Szczesniak",
keywords = "Thermal optimisation",
keywords = "Reliability issues",
keywords = "VLSI circuits",
abstract = "In this paper an adaptive evolutionary algorithm (AEA) for high-level synthesis, resulting in reduction of the power dissipation in CMOS circuits is presented. It enables us to design contemporary electronic circuits/systems with minimisation of the peak and average power consumption, which leads to reduction of the peak and average temperature of the designed chip. Therefore, the reliability of the integrated circuit (IC) can be improved. The results of experiments carried out for the chosen benchmark circuits show that the achieved reduction of power consumption varies from 4 to 52%."
}
@article{Casu20031175,
title = "Coupled electro-thermal modeling and optimization of clock networks",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1175 - 1185",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00208-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002088",
author = "Mario R. Casu and Mariagrazia Graziano and Guido Masera and Gianluca Piccinini and Maurizio Zamboni",
keywords = "Clock networks",
keywords = "Electrothermal simulation",
keywords = "Interconnect self-heating",
keywords = "Electromigration",
abstract = "In this paper a coupled electro-thermal model is used for the optimal design of the clock distribution tree of a high performance microprocessor. Such approach allows simultaneously to take into account both thermal and electrical constraints. In particular timing issues such as clock delay from the root of the tree to the leaves and skew between the leaves are optimized by a suitable wire and buffer sizing. At the same time the lifetime constraints of clock wires that are affected by the electromigration, enhanced by the high temperature reached in interconnects due to the Joule self-heating, are checked and respected."
}
@article{Murthy20031187,
title = "Orientation independent two-phase heat spreaders for space constrained applications",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1187 - 1193",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00209-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300209X",
author = "S. Murthy and Y. Joshi and W. Nakayama",
abstract = "This paper presents a novel orientation independent two-phase heat spreader for constrained space applications.11Patent pending.
The two-phase spreader plate has a central evaporator section with an integrated condenser along the edges. A micro-fabricated three-dimensional enhancement structure is employed to improve the heat transfer performance of the spreader plate. The thermal performance of the system is characterized at different power levels and also for various inclination angles. At the maximum heat flux of 6.3 W/cm2 under natural convection conditions, the junction temperature of the two-phase spreader was found to be 47.6 °C less than the junction temperature predicted for an equivalent solid metal plate subjected to similar boundary conditions. The performance of the spreader plate is found to be orientation independent as long as the enhancement structure in the evaporator remains flooded with the coolant liquid."
}
@article{Joshi20031195,
title = "How well can we assess thermally driven reliability issues in electronic systems today? Summary of panel held at the Therminic 2002",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1195 - 1201",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00200-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002003",
author = "Yogendra Joshi and Kaveh Azar and David Blackburn and Clemens J.M. Lasance and Ravi Mahajan and Jukka Rantala",
keywords = "Thermal modeling",
keywords = "Reliability",
keywords = "Microelectronics and microsystems",
abstract = "A panel was organized at the Therminic 2002 workshop to address the question posed in the title of this summary paper. Brief presentations were made by the six panelists, followed by an open discussion among Workshop participants. The focus of the panel was on reliability, not performance, and on systems, not parts. While the panel recognized the availability of various specialized analytical tools at a handful of leading research institutions and with expert individuals, it was felt that the industry at large is still transitioning from the use of simple thermal design rules to a more detailed physics based methodology. The current state-of-the-art of thermal metrology was outlined. An overview of the temperature-reliability relationships at the component and system levels was provided. Some of the emerging thermal challenges associated with the evolution of three-dimensional on-chip interconnect architectures were identified. The role of uncertainty analysis in predictions was emphasized. A primary conclusion was to focus on the prediction of thermally influenced risks in current and future products, based on a sound physics based approach."
}
@article{tagkey20031203,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "1203 - 1212",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00181-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001812",
key = "tagkey20031203"
}
@article{tagkey2003III,
title = "List of contents",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "III - XIV",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00307-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003070",
key = "tagkey2003III"
}
@article{tagkey2003XV,
title = "Author index",
journal = "Microelectronics Journal",
volume = "34",
number = "12",
pages = "XV - XIX",
year = "2003",
note = "Thermal Investigations of integrated circuits and systems at Therminic 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00308-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203003082",
key = "tagkey2003XV"
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "IFC - ",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00284-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002842",
key = "tagkey2003IFC"
}
@article{RabiN2003987,
title = "Guest Editorial",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "987 - ",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00166-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001666",
author = "Rabi N. and Mahapatra"
}
@article{Münzenberger2003989,
title = "A general time model for the specification and design of embedded real-time systems",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "989 - 1000",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00167-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001678",
author = "Ralf Münzenberger and Matthias Dörfel and Richard Hofmann and Frank Slomka",
keywords = "Real-time",
keywords = "Embedded systems",
keywords = "Hardware/software co-design",
keywords = "Specification of clocks",
abstract = "Design of complex embedded systems feasible with current and upcoming semiconductor technologies necessitates consideration of real-time from the beginning. However, the commonly used specification techniques do not consider temporal aspects in general like fulfillment of high level timing requirements or dynamic reactions on timing violations. In this paper, we discuss the restrictions of current specification techniques for embedded real-time systems and present a general time model that solves this issue. The time model contains the progress of time, the measurement of time and the specification of timing requirements based on event traces. In contrast to earlier techniques, preconditions determine the actual relevance of a specific timing bound. Exemplified for SDL, a solution for the specification of temporal aspects is shown. The advantages of this solution are discussed in a hardware/software co-design case study from the mobile communication area."
}
@article{Resano20031001,
title = "Analyzing communication overheads during hardware/software partitioning",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1001 - 1007",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00168-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300168X",
author = "J.Javier Resano and M.Elena Pérez and Daniel Mozos and Hortensia Mecha and Julio Septién",
keywords = "Hardware/software partitioning",
keywords = "Codesign system",
keywords = "Estimations",
abstract = "Current partitioning codesign tools often simplify the communication channel features by working with generic abstract channels, which in a following step, are mapped into the actual ones. However, this mapping process can critically affect the performance of a solution. Hence, we have developed a novel methodology that studies the communications in depth, taking into account the actual channel features from the first step. With this methodology we have optimised the design-space exploration of a partitioning tool, achieving up to a 2.5 performance speed-up, while increasing the time needed to perform the partitioning by less than 20%."
}
@article{Ottoni20031009,
title = "Address register allocation for arrays in loops of embedded programs",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1009 - 1018",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00169-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001691",
author = "Guilherme Ottoni and Guido Araujo",
keywords = "Code optimization",
keywords = "Register allocation",
keywords = "Array references",
keywords = "Address registers",
keywords = "Auto-increment addressing modes",
keywords = "Loops",
keywords = "Digital signal processors",
abstract = "Efficient address register allocation has been shown to be a central problem in code generation for processors with restricted addressing modes. This paper extends previous work on Global Array Reference Allocation (GARA), the problem of allocating address registers to array references in loops. It describes two heuristics to the problem, presenting experimental data to support them. In addition, it proposes an approach to solve GARA optimally which, albeit computationally exponential, is useful to measure the efficiency of other methods. Experimental results, using the MediaBench benchmark and profiling information, reveal that the proposed heuristics can solve the majority of the benchmark loops near optimality in polynomial-time. A substantial execution time speedup is reported for the benchmark programs, after compiled with the original and the optimized versions of GCC."
}
@article{Park20031019,
title = "Combining data remapping and voltage/frequency scaling of second level memory for energy reduction in embedded systems",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1019 - 1024",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00170-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001708",
author = "Jun Cheol Park and Vincent Mooney and Sudarshan K. Srinivasan",
keywords = "Low power",
keywords = "Embedded systems",
keywords = "Energy model",
keywords = "Voltage/frequency scaling",
keywords = "Compiler optimizations",
abstract = "In this paper we show that the energy reductions obtained from using two techniques, data remapping (DR) and voltage/frequency scaling of off-chip bus and memory, combine to provide interesting trade offs between energy, execution time and power. Both methods aim to reduce the energy consumed by the memory subsystem. DR is a fully automatic compile time technique applicable to pointer-intensive dynamic applications. Voltage/frequency scaling of off-chip memory is a technique applied at the hardware level. When combined together, energy reductions can be as high as 49.45%. The improvements are verified in the context of three OLDEN pointer-centric benchmarks, namely Perimeter, Health and TSP."
}
@article{Vahid20031025,
title = "Highly configurable platforms for embedded computing systems",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1025 - 1029",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00171-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300171X",
author = "Frank Vahid and Roman Lysecky and Chuanjun Zhang and Greg Stitt",
keywords = "Platform",
keywords = "System-on-a-chip",
keywords = "Configurable",
keywords = "Field-programmable gate array",
keywords = "Cores",
keywords = "Embedded systems",
keywords = "Low energy",
keywords = "Cache",
keywords = "Hardware/software partitioning",
keywords = "Architecture tuning",
abstract = "Platform chips, which are pre-designed chips possessing numerous processors, memories, coprocessors, and field-programmable gates arrays, are becoming increasingly popular. Platforms eliminate the costs and risks associated with creating customized chips, but with the drawbacks of poorer performance and energy consumption. Making platforms highly configurable, so they can be tuned to the particular applications that will execute on those platforms, can help reduce those drawbacks. We discuss the trends leading embedded system designers towards the use of platforms instead of customized chips. We discuss UCR research in designing highly configurable platforms, highlighting some of our work in highly configurable caches, and in hardware/software partitioning."
}
@article{WenBin20031031,
title = "Anisotropic behavior of the capillary action in flip chip underfill",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1031 - 1036",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.001",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002684",
author = "Wen-Bin and Young",
keywords = "Underfill",
keywords = "Flip chip",
keywords = "Capillary flow",
keywords = "Bump pitch",
keywords = "Underfill flow",
abstract = "An underfill encapsulant can be used to improve the long-term reliability of flip chip interconnecting system by filling the gap between the chip and substrate around the solder bumps. The underfill encapsulant was filled by a capillary flow. This study was devoted to investigate the anisotropic effects of the capillary action induced by the solder bumps. A modified Hele–Shaw flow model, considering the flow resistance in both the thickness direction and the restrictions between solder bumps, was used. A capillary force model, depending on the direction of filling flow, for full array solder bumps was proposed. The capillary force was formulated based on quadrilateral arrangement of solder bumps. It was found that the capillary action is not the same for different directions. In the 45° direction, enhancement of the capillary flow was noticed for a bump pitch within a critical value. The edge preferential flow during the underfill experiment could be attributed to the anisotropic behavior of the capillary action."
}
@article{Perotti20031037,
title = "Realistic semiconductor heterostructures design using inverse scattering",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1037 - 1041",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.004",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300274X",
author = "Luca Perotti and Daniel Bessis",
keywords = "Inverse scattering",
keywords = "Selfconsistent field",
keywords = "Quantum wells",
abstract = "We discuss the construction of optimized electronic filters using inverse scattering methods. We study a wide range of densities and temperatures, room temperature included. Discretization methods of the potential (including the self-consistent potential of the conduction electrons) are worked out that retain all its properties."
}
@article{Tataroğlu20031043,
title = "Au/SnO2/n-Si (MOS) structures response to radiation and frequency",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1043 - 1049",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.003",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002726",
author = "A. Tataroğlu and Ş. Altındal and S. Karadeniz and N. Tuğluoğlu",
keywords = "γ-rays",
keywords = "MOS structure",
keywords = "Radiation effect",
keywords = "MOS",
keywords = "Interface states",
keywords = "Series resistance",
abstract = "Metal–insulator–semiconductor (MOS) structures with insulator layer thickness of 290 Å were irradiated using a 60Co (γ-ray) source and relationships of electrical properties of irradiated MOS structures to process-induced surface defects have been investigated both before and after γ-irradiation. The density of surface state distribution profiles of the sample Au/SnO2/n-Si (MOS) structures obtained from high–low frequency capacitance technique in depletion and weak inversion both before and after irradiation. The measurement capacitance and conductance are corrected for series resistance. Series resistance (Rs) of MOS structures were found both as function of voltage, frequency and radiation dose. The C(f)–V and G(f)–V curves have been found to be strongly influenced by the presence of a dominant radiation-induced defects. Results indicate interface-trap formation at high dose rates (irradiations) is reduced due to positive charge build-up in the semiconductor/insulator interfacial region (due to the trapping of holes) that reduces the flow rate of subsequent holes and protons from the bulk of the insulator to the Si/SnO2 interface. The series resistance decreases with increasing dose rate and frequency the radiation-induced flat-band voltage shift in 1 V. Results indicate the radiation-induced threshold voltage shift (ΔVT) strongly dependence on radiation dose rate and frequency."
}
@article{Tsang20031051,
title = "Study and improvement of electrical performance of 130 nm Cu/CVD low k SiOCH interconnect related to via etch process",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1051 - 1058",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.005",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002751",
author = "C.F. Tsang and V.N. Bliznetsov and Y.J. Su",
keywords = "Yield improvement",
keywords = "Back-end-of-line process integration",
keywords = "Copper interconnects",
keywords = "Low-k dielectrics",
keywords = "Failure analysis",
abstract = "130 nm technology uses Cu/low k dielectrics integration for the back-end-of-line (BEOL) process. The motivation of this work was to assess and improve the electrical yields of dense via chains through the study of effects of via etch process splits. We also demonstrate successful wafer fabrication of two Cu-level interconnects with chemical vapor deposited (CVD) low k SiOCH material using dual damascene architecture processed on 200 mm wafers. As a result, we achieved excellent wafer level electrical yields for both dense via chains and metal bridging-continuity structures of the BEOL interconnections."
}
@article{Abdelaoui20031059,
title = "Electrical characterizations of preamorphized junctions under LF magnetic field",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1059 - 1066",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.008",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002738",
author = "M. Abdelaoui and M. Idrissi-Benzohra and H. Mehor and M. Benzohra and F. Olivié",
keywords = "Ac magnetic field",
keywords = "Low frequency",
keywords = "Preamorphization",
keywords = "Defects",
abstract = "The increased requirements for reduction of electronic system dimensions, essentially in embedded equipment such as automotive and avionics, lead to juxtapose high power modules and low level modules on the same printed circuit. This juxtaposition induces electromagnetic perturbations that can disturb or damage the operation of the system. In order to study thoroughly these phenomena, a low frequency (LF) magnetic field was applied to shallow P+N junctions obtained by the preamorphization technique, at two temperatures: ambient and nitrogen temperature. Electrical characterizations were performed on the different samples. The results show that the impact of the LF magnetic field is essentially observed in the generation-recombination region of the junction. Moreover, it appears that crystalline sample presents a good immunity to the LF magnetic field perturbation at high temperature. On the other hand, the preamorphization temperature influences the response of the sample. So, a good control of the technological parameters will permit to reduce or cancel the effect of the magnetic perturbations on the electronic components since conception."
}
@article{Darabi20031067,
title = "Development of a chip-integrated micro cooling device",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1067 - 1074",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.010",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002702",
author = "J. Darabi and K. Ekula",
keywords = "Micro cooling device",
keywords = "Micropump",
keywords = "Polarization",
keywords = "Electronic cooling",
keywords = "Thin film evaporation",
keywords = "Electrohydrodynamics",
keywords = "EHD",
abstract = "An experimental/computation investigation was carried out to develop a MEMS-based micro cooling device to provide direct cooling to high heat flux electronics and MEMS devices. This device uses the electrohydrodynamic principles to pump and form an ultra thin film over a heated surface that requires cooling. The important part is played by applying an electric field to a set of interdigitated inclined electrodes to pump and form a thin film and to remove heat by thin film evaporation process. The dimension of the active electrode area of the device was 32×32 mm2. The electrodes were separated by a distance of 20 μm at the bottom and 60 μm at the top. The electrodes were connected to a single common electrode at the top and bottom. Static pumping pressure and heat transfer experiments were performed using 3M's HFE-7100 thermal fluid manufactured by the 3M Corporation. Due to the small gap between electrodes (20 μm) all experiments were performed inside a class 100 cleanroom. Cooling rates of 35 W/cm2 were obtained at a superheat of 19 °C."
}
@article{Kadlečı́ková20031075,
title = "Raman bands in microwave plasma assisted chemical vapour deposited films",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1075 - 1077",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002696",
author = "M. Kadlečı́ková and J. Breza and M. Veselý and Z. Frgala and V. Kudrle and J. Janča and J. Janı́k and J. Buršı́k",
keywords = "Microwave plasma assisted chemical vapour deposition",
keywords = "Diamond",
keywords = "Raman spectroscopy",
abstract = "Raman spectroscopy is employed to characterize thin diamond films deposited by microwave plasma assisted chemical vapour deposition technique using a gas mixture of methane and hydrogen. The surface morphology of the films was analyzed by scanning electron microscopy. We have identified submicron crystals on (100) facets of diamond crystals which gave rise to bands in the Raman spectrum centred at ≈1170 and ≈1456 cm−1."
}
@article{Zeng20031079,
title = "Improving hydrogenation efficiency of polycrystalline silicon thin film transistors by a new approach",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1079 - 1085",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.09.007",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002672",
author = "Xiangbin Zeng and X.W. Sun and Johnny K.O. Sin",
keywords = "Hydrogenation",
keywords = "Trap state density",
keywords = "Poly-Si thin film",
keywords = "Poly-Si thin film transistors",
abstract = "In this paper, a new hydrogenation process of poly-Si thin film for the fabrication of poly-Si thin film transistors (TFTs) is proposed. In the new approach, the hydrogenation of TFTs is performed before deposition of contact metal. N-channel and p-channel poly-Si TFTs with various channel lengths and widths were fabricated with the new and conventional processes for comparison. The results verified that the efficiency of hydrogenation has been improved remarkably by the new process. The field-effect mobility of carriers, the on state current, threshold voltage and the on/off states current ratio have been greatly improved, and the trap state density has been reduced significantly."
}
@article{OndoNdong20031087,
title = "Electrical properties of zinc oxide sputtered thin films",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1087 - 1092",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00198-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001988",
author = "R. Ondo-Ndong and G. Ferblantier and F. Pascal-Delannoy and A. Boyer and A. Foucaran",
keywords = "ZnO",
keywords = "Conductivity",
keywords = "Electrical properties",
keywords = "Dielectric properties",
abstract = "ZnO thin films were deposited on silicon substrate by rf magnetron sputtering from metallic zinc target. The electrical properties of ZnO are currently being studied. In this work, measurements of the ac conductivity properties of ZnO sandwich structures with silver and platinum electrodes are reported. The frequency dependence of both the ac conductivity and dielectric constant of thin films of ZnO have been investigated in the frequency range 5 kHz–13 MHz. It is shown that the total ac conductivity σ(ω), obeys the equation σ(ω)=AωS where s is an index which increases with frequency and decreases with temperature. It appears that for ZnO films, the conduction mechanism is thermally activated and both the overlap large polaron tunnelling and the correlated barrier-hopping of charge carrier over localized states fit the experimental data. The dielectric constant, εr, lies in the range 8–9 at room temperature and is independent of the frequency in the dielectric thin films."
}
@article{Kim20031093,
title = "High performance quadruple sub-harmonic mixer for millimeter-wave applications",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1093 - 1098",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00253-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002532",
author = "Sung Chan Kim and Dan An and Dong-Hoon Shin and Jin Koo Rhee",
keywords = "Quadruple",
keywords = "Sub-harmonic mixer",
keywords = "MIMIC",
keywords = "Coplanar wave-guide",
abstract = "In this paper, we present high performance quadruple sub-harmonic mixers for millimeter-wave applications. The sub-harmonic mixer was designed by using 0.1 μm GaAs PHEMT's and the coplanar wave-guide library. We show the low conversion loss of 5.8 dB at a local oscillator (LO) power of 13 dBm from the fabricated sub-harmonic mixers. The V-band sub-harmonic mixer also ensure a high degree of isolation showing −75.0 dB in the LO-to-IF and −48.1 dB in the LO-to-RF at a frequency of 14.5 GHz, respectively. The fabricated V-band sub-harmonic mixer has a lower conversion loss characteristics compared with ever reported mixers for millimeter frequencies."
}
@article{Strollo20031099,
title = "Direct digital frequency synthesizers exploiting piecewise linear Chebyshev approximation",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1099 - 1106",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/j.mejo.2003.07.002",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002544",
author = "A.G.M. Strollo and D. De Caro",
keywords = "Digital integrated circuits",
keywords = "CMOS digital integrated circuits",
keywords = "Direct digital frequency synthesis",
keywords = "Arithmetic circuits",
abstract = "The paper introduces a new approach to design a Digital Direct Frequency Synthesizer (DDFS) using a piecewise linear, minimum maximum error, polynomial approximation technique. The approach, exploiting a first order Chebyshev polynomial expansion, overcomes the performances of previously proposed DDFS based on Taylor approximation.
A detailed description of the method used to compute the content of the look-up tables in the new DDFS is given, analytically showing the improved accuracy of new DDFS with respect to Taylor one.
Two new Chebyshev DDFS with 80 dBc SFDR, have been designed up to the layout level, exploiting optimized arithmetic circuits. Simulation results confirm improvement in performances with respect to Taylor DDFS."
}
@article{tagkey20031107,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "34",
number = "11",
pages = "1107 - 1112",
year = "2003",
note = "IEEE Workshop on Embedded System Codesign (ESCODES)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00148-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001484",
key = "tagkey20031107"
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "IFC - ",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00259-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002593",
key = "tagkey2003IFC"
}
@article{Kerkhoff2003887,
title = "Analog and mixed signal test techniques for SoCs",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "887 - 888",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00234-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203002349",
author = "Hans G. Kerkhoff and Bozena Kaminska"
}
@article{DeVenuto2003889,
title = "Floating body effects model for fault simulation of fully depleted CMOS/SOI circuits",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "889 - 895",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00157-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001575",
author = "D. De Venuto and M.J. Ohletz",
keywords = "Silicon-On-Insulator device",
keywords = "Kink-effect",
keywords = "Fault simulation model",
keywords = "Test",
keywords = "Iddq",
keywords = "Iccq",
abstract = "The possibility to perform realistic fault simulations for Silicon-On-Insulator circuits is investigated. A simple but complete fault simulation model (fsm) for a technology specific effect is described. The effect considered known as kink effect is typical for partially depleted devices but can occur in the presence of a floating body or in the sub-threshold region even in fully depleted devices causing wrong performances. The model proposed here comprises of only a single additional transistor with a controlled body current. It is not a real physical transistor but just one to describe the electrical behaviour of the device when the critical kink-effect situation occurs and for this reason does not increase the simulation time. From the comparison with device characterization measurements on a 1 μm technology device a good matching with the fsm was found."
}
@article{Roman2003897,
title = "Building an analogue fault simulation tool and its application to MEMS",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "897 - 906",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00162-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001629",
author = "C. Roman and S. Mir and B. Charlot",
keywords = "Microsystems",
keywords = "Transducers",
keywords = "Micro-electro-mechanical-systems",
keywords = "Computer-aided design",
keywords = "Fault simulation",
keywords = "Microsystem fault models",
abstract = "Microsystems are rapidly evolving from individual transducer components into highly integrated complete systems on the same chip. Conceiving these devices requires significant changes in the design and test flow. Computer-Aided Design (CAD) tools and validation procedures are to be created and prepared to face the new challenge. So far, very little work has been done to ease the burden of testing highly integrated transducers. This paper first looks into the design and test flow for these new systems. Next it presents a tool that is currently being developed in order to make possible the extensive fault simulation of Microsystems, concerning the transducer and the electronic parts as well. A Fault Model Description Language (FMDL) is proposed. The FMDL is expected to deal gracefully with this task, taking into account the specific requirements of non-electronic parts but keeping compatibility with an Integrated Circuit CAD environment."
}
@article{Veikko2003907,
title = "Behavioral test generation modeling approach for mixed-signal IC verification",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "907 - 912",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00164-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001642",
author = "Veikko and Loukusa",
keywords = "Mixed-signal",
keywords = "Test generation",
keywords = "Test debug",
keywords = "Behavioral model",
keywords = "Top-level simulation",
abstract = "An application of behavioral modeling for mixed-signal test generation and applied results are presented. It is shown that test debugging can be provided in the verification test system before silicon by utilizing simulated behavioral mixed-signal models. Due to the behavioral modeling technique, the computational performance was enhanced to a level allowing efficient test development and debugging. Influence on efficiency in design methods is reported."
}
@article{Stančić2003913,
title = "Testability-analysis driven test-generation of analogue cores",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "913 - 917",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00159-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001599",
author = "M. Stančić and H.G. Kerkhoff",
keywords = "Testability",
keywords = "Controllability",
keywords = "Observability",
abstract = "A new definition of the testability transfer factor for circuit components that provides better sensitivity with respect to parametric deviations is presented. New equations for the testability measures in a mixed-signal core are given. Testability analysis is used for test-pattern generation and for consideration of inserting wrapper cells. The simulation results show the effectiveness of the approach."
}
@article{Font2003919,
title = "A new BICS for CMOS operational amplifiers by using oscillation test techniques",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "919 - 926",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00158-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001587",
author = "J. Font and R. Picos and M. Roca and E. Isern and E. Garcı́a-Moreno",
keywords = "Current sensor",
keywords = "Oscillation-test-technique",
keywords = "Operational transconductance amplifier",
keywords = "Fault models",
keywords = "Built-in current sensor",
abstract = "In this paper, we present a built-in current sensor to test operational amplifiers that takes advantage of previous results where the negative supply current has been taken as the test observable using the Oscillation-test technique. The sensor is applied to a variable-length chain of OTAs considering an exhaustive analysis of catastrophic defects (opens, shorts), Gate Oxide Short and Floating Gate defects. We analyse the sensitivity of both frequency and amplitude of the current consumption. Results show that the proposed sensor provides 97% fault coverage, as the previous results suggested."
}
@article{Huertas2003927,
title = "Oscillation-based test in bandpass oversampled A/D converters",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "927 - 936",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00163-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001630",
author = "Gloria Huertas and Diego Vázquez and Adoración Rueda and José L. Huertas",
keywords = "Mixed-signal design",
keywords = "Design for test",
keywords = "Oscillation-based test",
keywords = "Test of ΣΔ modulators",
abstract = "This paper extends a study performed by the authors in previous papers dealing with the OBT approach applied to low-pass modulators ‘Microelectron. J. 33/10 (2002) 799’, showing herein the specific features associated to the bandpass case. A practical feedback strategy will be proposed in order to built an effective oscillator, which can be valuable for testing purposes. Critical points of the proposed OBT solution will be considered in order to establish useful guidelines to apply this test approach to generic bandpass ΣΔ modulators."
}
@article{Negreiros2003937,
title = "Testing analog circuits using spectral analysis",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "937 - 944",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00160-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001605",
author = "M. Negreiros and L. Carro and A.A. Susin",
keywords = "Mixed-signal BIST",
keywords = "DSP-based test",
abstract = "In this work a test strategy for analog circuits based on spectral analysis is proposed. The test strategy is blind, in the sense that only statistical information about the input signal is needed, but no sampling of the input signal is required. This feature allows the test of analog circuits with minimum analog hardware addition. In the context of Systems-on-Chip, this strategy needs only the inclusion of a small random signal generator, and transfers most of the signal processing to the digital domain, allowing the use of a purely digital tester or a digital BIST technique. This paper presents the underlying principle of the method and experimental test results for linear analog systems."
}
@article{Azaı̈s2003945,
title = "A-to-D converters static error detection from dynamic parameter measurement",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "945 - 953",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00161-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001617",
author = "F. Azaı̈s and S. Bernard and Y. Bertrand and M. Comte and M. Renovell",
keywords = "Analog-to-digital converters testing",
keywords = "Static and dynamic parameters",
keywords = "Spectral analysis",
abstract = "A complete characterisation of ADC requires the estimation of two kinds of performances, static and dynamic parameters. Each set of items is extracted from a different test procedure, involving high test cost. As both groups of parameters reflect the converter behaviour, there should be a link between each other. This paper investigates whether the correlation between ADC static and dynamic parameters could enable to deduce the whole set of performances from a single dynamic test procedure, leading to shorter processing time and reduced hardware resources. The influence of static errors on the classical dynamic parameters is thus studied for different ADC resolutions. It is shown that under appropriate test conditions, the variations of dynamic parameters under static errors impact are significant enough to allow the detection of ADC offset, gain and non-linearity errors."
}
@article{Abdelaoui2003955,
title = "Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctions",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "955 - 959",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00154-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300154X",
author = "M. Abdelaoui and M. Idrissi-Benzohra and M. Lamine and M. Benzohra",
keywords = "Shallow junctions",
keywords = "Pre-amorphization",
keywords = "Temperature",
keywords = "Simulation",
keywords = "Spice model",
abstract = "Shallow P+N junctions were obtained using germanium pre-amorphization step to reduce the high diffusivity of boron implanted in silicon. The germanium implantation step was performed under different conditions of temperature: ambient temperature and nitrogen temperature. P-type doping was obtained by boron implantation at relatively low energy. To characterize and simulate the electrical behaviour of such samples, steady state current–voltage measurements have been performed at different temperatures varying between 172 and 294 K. The results show a close dependence between the current–voltage characteristics of the samples and their technological parameters of manufacturing. The pre-amorphization step at ambient temperature seems to improve the electrical behaviour of the junction. To simulate the electrical characteristics of the studied samples, a reliable model has been developed based on the classical Spice formulas and taking into account additional phenomena. The simulated curves satisfactorily fit the experimental results for all the samples."
}
@article{D'Amico2003961,
title = "Transistors based on the Guanosine molecule (a DNA base)",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "961 - 963",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00197-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001976",
author = "S. D'Amico and G. Maruccio and P. Visconti and E. D'Amone and R. Cingolani and R. Rinaldi and S. Masiero and G.P. Spada and G. Gottarelli",
keywords = "Molecular Electronics",
keywords = "Transistor",
keywords = "Nanotechnology",
abstract = "Molecules are attractive to develop nano-electronic devices. In this paper a new type of transistor is realized by using self-organized films of the Guanosine molecule, a modified DNA base. With its 40 nm channel length the transistor is a good starting point for a new class of nano-electronics devices.
Experimental current-voltage characteristics are shown. A circuital model is also proposed."
}
@article{MukherjeeRoy2003965,
title = "A new approach for eliminating unwanted patterns in attenuated phase shift masks",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "965 - 967",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00195-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001952",
author = "M. Mukherjee-Roy and N. Singh and S.S. Mehta and G.S. Samudra",
keywords = "Attenuated phase shift masks",
keywords = "Optical microlithography",
keywords = "Masks",
abstract = "A new approach is identified to eliminate unwanted patterns in high transmission phase shift masks to achieve useful patterning across pitch. A sub-resolution structure is added to the reticle where the propensity of unwanted pattern is found to be maximum. This sub-resolution feature is fully transmitting and has a phase opposite to that of the background. Simulations prove that the light from this feature is successful in nullifying the background intensity responsible for producing the unwanted patterns, while the radiation coming out of the added feature itself gets cancelled and there is no resulting aerial image intensity at the location of the main feature. This technique will help patterning at dense (side lobe prone) pitches even for high transmission masks. Also, the mask-making process will be lot simpler than that of a ternary mask."
}
@article{Beji2003969,
title = "Morphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "969 - 974",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00183-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001836",
author = "L. Beji and L. Sfaxi and B. Ismail and S. Zghal and F. Hassen and H. Maaref",
keywords = "Gallium arsenide",
keywords = "Electrochemical etching",
keywords = "Photoluminescence",
keywords = "Quantum confinement",
abstract = "Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the presence of etch pits ranging in size from 0.01 to 2 μm and they were strongly dependent on the electrochemical etching conditions. The etch pits chemical composition consists of O, Ga and As whereas the porous structure consists predominantly of GaAs as performed by energy dispersive X-ray analyzer. Typical porous structure with pores diameter ranging from 15 to 50 nm has been obtained. Room temperature photoluminescence (PL) investigations reveal the presence of two and in one case three PL bands besides the PL band of the started GaAs. Peaks wavelengths positions were approximately located in 600–900 nm range. The PL bands peaks wavelengths positions depend on the electrochemical etching conditions and they were approximately unchanged with increasing temperature. However, their PL intensity increased slowly with increasing temperature and tend to saturate. The observed PL bands were explained by the quantum confinement effects in GaAs nanocrystallites."
}
@article{Kitsos2003975,
title = "An efficient reconfigurable multiplier architecture for Galois field GF(2m)",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "975 - 980",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00172-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001721",
author = "P Kitsos and G Theodoridis and O Koufopavlou",
keywords = "Galois field",
keywords = "Polynomial multiplication",
keywords = "Bit-serial",
keywords = "Irreducible polynomial",
keywords = "All-one polynomial",
keywords = "Linear Feedback Shift Register",
keywords = "Low power",
keywords = "Cryptography",
keywords = "Elliptic curves",
abstract = "This paper describes an efficient architecture of a reconfigurable bit-serial polynomial basis multiplier for Galois field GF(2m), where 1<m≤M. The value m, of the irreducible polynomial degree, can be changed and so, can be configured and programmed. The value of M determines the maximum size that the multiplier can support. The advantages of the proposed architecture are (i) the high order of flexibility, which allows an easy configuration for different field sizes, and (ii) the low hardware complexity, which results in small area. By using the gated clock technique, significant reduction of the total multiplier power consumption is achieved."
}
@article{tagkey2003981,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "34",
number = "10",
pages = "981 - 985",
year = "2003",
note = "IMSTW 2002",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00135-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001356",
key = "tagkey2003981"
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "IFC - ",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00174-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001745",
key = "tagkey2003IFC"
}
@article{DongKim2003767,
title = "Solid phase crystallization of amorphous silicon on glass by thin film heater for thin film transistor (TFT) application",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "767 - 771",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00151-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001514",
author = "Byoung Dong Kim and Hunjoon Jung and Gi-Bum Kim and Seung-Ki Joo",
keywords = "A. Amorphous silicon",
keywords = "B. Solid phase crystallization",
keywords = "B. Thin film heater",
abstract = "A new process for solid phase crystallization (SPC) of amorphous silicon (a-Si) using thin film heater is reported. With this localized Ti silicide thin film heater, we successfully crystallized 500 Å-thick a-Si in a few minutes without any thermal deformation of glass substrate. The size of crystallized silicon grain was abnormally big (30–40 μm). Polycrystalline thin film transistors (TFT) fabricated using this unique thin film heater showed better mobility than those of conventional ones by furnace annealing."
}
@article{Heino2003773,
title = "Thermal conduction at the nanoscale in some metals by MD",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "773 - 777",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00149-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001496",
author = "P. Heino and E. Ristolainen",
keywords = "Thermal conductivity",
keywords = "Finite size effect",
keywords = "Phonons",
keywords = "Molecular dynamics",
abstract = "Miniaturization of electronic devices leads to nanoscale structures in the near future. As the system size decreases the heat dissipation density increases rapidly and the heat conduction becomes an important problem. Moreover, in very small systems the conduction is a size dependent phenomenon—conductivity decreases as the size decreases. We study the thermal conduction by phonons and its size dependency in seven metals, most of which are important in electronics. We use the molecular dynamic method with embedded atom potentials."
}
@article{Kim2003779,
title = "Patterning issues for the fabrication of sub-micron memory capacitors' electrodes",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "779 - 783",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00152-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001526",
author = "Hyoun Woo Kim and Chang-Jin Kang",
keywords = "Platinum",
keywords = "Ruthenium",
keywords = "Etching",
keywords = "Critical dimension",
keywords = "Reactive ion etching lag",
abstract = "This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 μm) dynamic random access memory devices. Due to reactive ion etching lag, the Pt etch rate decreased drastically below the CD of 0.20 μm and thus K-th storage node electrode with the CD of 0.15 μm could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmountly-the above difficulties. The Ru electrode cannot for the stack-type structure is introduced and alternative multischemes based on the introduction of the concave-type selfstructure upto using semi-Pt or Ru as an electrode material are outlined respectively."
}
@article{Kiziroglou2003785,
title = "Design and simulation of a nanoelectronic single-electron analog to digital converter",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "785 - 789",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00153-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001538",
author = "Michail E. Kiziroglou and Ioannis Karafyllidis",
keywords = "Nanoelectronics",
keywords = "Single-electronics",
keywords = "A to D",
abstract = "The design of a nanoelectronic single-electron analog to digital (A to D) converter is presented. By taking advantage of the Coulomb blockade effect, the conversion of the analog input to a digital signal is obtained directly without the use of reference voltages, counters or other auxiliary circuitry. The operation of the A to D converter is simulated and the electron transport in the circuit is analyzed. The stability of the single-electron A to D converter circuit is studied and its stable operation is shown. The main result of this research work is that single-electron A to D converters are simple, stable and can be fabricated."
}
@article{Wang2003791,
title = "Performance of a novel non-planar diaphragm for high-sensitivity structures",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "791 - 796",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00150-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001502",
author = "W.J. Wang and R.M. Lin and Y. Ren and X.X. Li",
keywords = "Polysilicon",
keywords = "Corrugated diaphragm",
keywords = "High-sensitivity",
abstract = "A novel single deeply corrugated diaphragm (SDCD) is presented for high-sensitivity devices. Finite-element model is used to evaluate the mechanical sensitivity, resonance frequency and zero-pressure offset of the SDCD structure. Results show that very high performance of the diaphragm can be achieved using this technique. The optimized fabrication processes to obtain low tensile stress polysilicon film is described. The measurements show reasonable agreements with the theoretical predictions."
}
@article{Rault2003797,
title = "Computational modelling of the refractive index and reflectivity of a quantum well solar cell",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "797 - 803",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00137-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300137X",
author = "Francis K. Rault and Ahmad Zahedi",
keywords = "Computational modelling",
keywords = "Quantum well solar cell",
keywords = "Refractive index",
keywords = "Reflectivity",
abstract = "In this paper the modelling of the refractive index and reflectivity of a quantum well solar cell (QWSC) is theoretically developed and computationally analysed. The model is based on the Modified Single Effective Oscillator model combined with the Fresnel equation. The model takes into consideration the effects of the design parameters including concentration levels, structural properties of the device (well length, etc.), operating temperature and electric field effects (due to doping concentration). Prior to analysis the authors show the model to have a solid foundation given it generates accurate results which match with experimental data for an AlGaAs/GaAs triple heterojunction cell. This justifies and promotes further work where the theoretical and computational analysis is repeated for a QWSC structure. In the case of the QWSC the results generated are for a bare AlGaAs/GaAs cell and the same cell with a ZnS anti-reflection coating. The results generated show promise for the new model however experimental verification is required. The analysis is performed for AM 1.5G spectrum. The model is intended to be an aid to QWSC designers."
}
@article{Lee2003805,
title = "Magnetic tunnel junctions with doubly-plasma oxidized AlOx insulation layer",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "805 - 808",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00138-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001381",
author = "Y.M. Lee and O. Song and C.S. Yoon and C.K. Kim and Y. Ando and H. Kubota and T. Miyazaki",
keywords = "Magnetic tunnel junction",
keywords = "Magnetoresistance ratio",
keywords = "Inductively coupled plasma",
keywords = "Doubly oxidation",
keywords = "Plasma oxidation",
keywords = "A1Ox tunnel barrier",
abstract = "Magnetic tunnel junctions (MTJ), with the tunnel barrier plasma oxidized in two steps, were fabricated in order to obtain structurally uniform AlOx insulator. The doubly oxidized junctions exhibited the magnetoresistance (MR) ratio of 27–31% without showing any noticeable drop in the MR ratio even after oxidation time was extended well beyond the optimal oxidation time for the normal junctions. Transmission electron microscopy of the junctions confirmed that the AlOx thickness was thinner for the doubly oxidized junctions compared to the singly oxidized MTJ. X-ray photoelectron spectroscopy of the doubly oxidized junction also strongly suggested that the initial oxide layer prevents the over-oxidation of the bottom electrode. The AlOx tunnel barrier oxidized in two steps improved the junction performance and widened the processing window."
}
@article{Urresti2003809,
title = "Optimisation of very low voltage TVS protection devices",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "809 - 813",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00136-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001368",
author = "J. Urresti and S. Hidalgo and D. Flores and J. Roig and J. Rebollo and I. Mazarredo",
keywords = "TVS",
keywords = "Protection devices",
keywords = "Punchthrough and clamping voltage",
keywords = "Voltage suppressor",
abstract = "This paper is aimed at the design and optimisation of advanced Transient Voltage Suppressors (TVS) devices for IC protection against ESD. A four-layer N+P+PN+ structure has been used to achieve breakdown voltages lower than 3 V. The effect of the critical geometrical and technological parameters on the TVS electrical characteristics is analysed with the aid of technological and electrical simulations. In this sense, the trade-off between voltage capability, leakage current and clamping voltage has been optimised. Fabricated TVS devices exhibit better electrical performances than those of the equivalent three-layer TVS device counterparts."
}
@article{Harlander2003815,
title = "Efficient inductance calculation in interconnect structures by applying the Monte Carlo method",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "815 - 821",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00147-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001472",
author = "Christian Harlander and Rainer Sabelka and Siegfried Selberherr",
keywords = "Finite element method",
keywords = "Interconnect analysis",
keywords = "Inductance",
keywords = "Monte Carlo method",
abstract = "We present an advanced algorithm for an extraction tool to compute inductances of interconnect structures. As already pointed out [Proc. Third Int. Conf. Modeling Simul. Microsyst. (2000) 416] the pursued energy concept leads to a 6-fold integral which can also be evaluated by use of the Monte Carlo method. A classical implementation of the Monte Carlo method, where the whole geometry has to be hunted for an associated element loses efficiency. Our approach is applied without time consuming element location for the random point coordinates to compute this integral. The precalculated current density distribution is computed with the finite element method. Geometrical modeling is done with an unstructured tetrahedral mesh to gain high flexibility and to ensure a latter integration of the process flow. Hence, some simplifications compared to the real geometry, as other published approaches usually do implicitly, are not required."
}
@article{Koutroulis2003823,
title = "A system for inverter protection and real-time monitoring",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "823 - 832",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00134-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001344",
author = "Eftichios Koutroulis and John Chatzakis and Kostas Kalaitzakis and Stefanos Manias and Nicholas C. Voulgaris",
keywords = "Real-time system",
keywords = "DC/AC inverter",
keywords = "Fail-safe",
keywords = "Protection",
keywords = "Microcontroller",
abstract = "A real-time system for protecting and monitoring a DC/AC converter has been designed and constructed. The proposed system consists of (a) a hardware protection unit for fast reaction, load protection and inverter fail-safe operation and (b) a microcontroller unit for calculating critical parameters of the inverter operation. The control unit malfunctions have not been investigated in this study. The proposed hardware architecture and sensors form a low-cost and reliable control unit. The experimental results show that the proposed system ensures the inverter protection and fail-safe features. The proposed unit can be used to increase the reliability of any power inverter in AC motor drives, renewable energy systems, etc. or can be incorporated in any UPS system."
}
@article{Moll2003833,
title = "Analysis of dissipation energy of switching digital CMOS gates with coupled outputs",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "833 - 842",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00133-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001332",
author = "Francesc Moll and Miquel Roca and Eugeni Isern",
keywords = "Power-consumption-model",
keywords = "Interconnections",
keywords = "Crosstalk-noise",
keywords = "Switching-activity",
keywords = "Low-power-design",
abstract = "The current trend of a high level of integration causes an important parasitic coupling between lines, that is, a capacitance between lines exists in addition to capacitance to ground. This paper calculates how this coupling capacitance influences the power consumption, taking into account the value of the capacitance, the switching activity of the coupled lines, and the influence of relative delay between transitions in the coupled lines."
}
@article{Boufaden2003843,
title = "GaN growth on porous silicon by MOVPE",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "843 - 848",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00130-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001307",
author = "T Boufaden and N Chaaben and M Christophersen and B El Jani",
keywords = "Photoluminescence",
keywords = "Epitaxial",
keywords = "Porous silicon",
abstract = "GaN films have been grown at 1050 °C on porous silicon (PS) substrates by metalorganic vapour phase epitaxy. The annealing phase of PS has been studied in temperature range from 300 to 1000 °C during 10 min under a mixture of ammonia (NH3) and hydrogen (H2). The PS samples were characterized after annealing by scanning electronic microscope (SEM). We observed that the annealing under the GaN growth conditions does not affect the porous structure.
For the growth of the active GaN layer we used a thin AlN layer in order to improve wetting between GaN and PS/Si substrate. The growth of AlN and GaN films was controlled by laser-reflectometry. We estimated the porosity of PS samples from the evolution of the reflectivity signal during the AlN growth. The crystalline quality and surface morphology of GaN films were determined by X-ray diffraction and SEM, respectively. Preferential growth of hexagonal GaN with (0002) direction is observed and is clearly improved when the thickness of AlN layer increases. Epitaxial GaN layers were characterized by photoluminescence."
}
@article{Kam2003849,
title = "Red to blue upconversion luminescence in Tm3+ doped ZrF4–ZnF2–AlF3–BaF2–YF3 optical glass",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "849 - 854",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00132-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001320",
author = "C.H. Kam and S. Buddhudu",
keywords = "Tm3+",
keywords = "Optical glass-upconversion",
keywords = "Blue emission",
abstract = "We report on the preparation and optical spectroscopy analysis of a new fluoride glass in the chemical composition of 20ZrF4–30ZnF2–25AlF3–10BaF2–15YF3 with Tm3+ as the luminescent ions. Under an UV source, this material has displayed an intense blue emission colour. Upon excitation with a red wavelength at 688 nm (3H6→3F3), this glass has shown two upconverted blue emissions at 452 nm (1D2→3F4) and 474 nm (1G4→3H6), respectively. Possible mechanisms involved in such upconverted blue emissions are explained via ground state absorption and excited state absorption processes through an energy-level structure diagram of Tm3+(4f12). By the successful application of Judd–Ofelt calculations, the luminescence results have successfully been analysed. Besides obtaining a clear understanding of the optical characteristics of this glass, we have also measured its physical properties such as the refractive indices at three different wavelengths in order to evaluate its light dispersion performance, glass density and other related parameters as well."
}
@article{Wang2003855,
title = "Analysis and design of a new SRAM memory cell based on vertical lambda bipolar transistor",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "855 - 863",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00129-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001290",
author = "Shang-Ming Wang and Ching-Yuan Wu",
keywords = "Negative-differential-resistance",
keywords = "Lambda-bipolar-transistor",
keywords = "SRAM",
abstract = "A voltage-controlled negative-differential-resistance device using a merged integrated circuit of two n-channel enhancement-mode MOSFETs and a vertical NPN bipolar transistor, called vertical Lambda-bipolar-transistor (VLBT), is presented for memory application. The new VLBT structure has been developed and its characteristics are derived by a simple circuit model and device physics. A novel single-sided SRAM cell based on the proposed VLBT is presented. Due to the characteristics of the VLBT, it offers better static noise margin and larger driving capability as compared with conventional single-side CMOS memory cell."
}
@article{Cole2003865,
title = "Parametric model of a polymeric chemoresistor for use in smart sensor design and simulation",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "865 - 875",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00131-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001319",
author = "Marina Cole and Nicola Ulivieri and Jesús Garcı́a-Guzmàn and Julian W. Gardner",
keywords = "Resistive gas sensors",
keywords = "Smart sensors",
keywords = "ASICs",
keywords = "Carbon-black polymer composites",
keywords = "Parametric model",
abstract = "A novel parametric model of a polymeric chemoresistor is proposed for application in the design and simulation of smart gas sensors. The model has been implemented using Cadence™ software and enables the simulation of both the static and dynamic response of a chemoresistor to a mixture of different gases. It also takes into account parametrically the effects of ambient temperature, humidity and sensor noise. The layout design and a schematic symbol have also been generated in Cadence -thus creating a resistive polymeric cell that can be used in the general design of smart ASIC based systems. The top cell comprises several sub-cells allowing versatility and adaptability in implementation through its modular structure. By changing the values of the simulation parameters and/or the mathematical model of the sub-cell that evaluates the gas sensor response, it is possible to extend its application to the design and simulation of chemoresistors in different configurations and with different gas sensitive materials. Here we illustrate our model in the design and simulation of resistive sensors employing carbon-black polymer composite films as the class of gas sensitive material."
}
@article{Balachova2003877,
title = "The protective effect of thin amorphous hydrogenated carbon a-C:H films during metallisation of metal–carbon–oxide–silicon (MCOS) diodes",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "877 - 880",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00008-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000089",
author = "O.V. Balachova and E.S. Braga",
keywords = "Amorphous hydrogenated carbon",
keywords = "C–V measurements",
keywords = "Oxide trapped charge",
abstract = "Capacitance–voltage (C–V) characteristics of the as-grown metal(Al)–carbon–oxide(SiO2)–semiconductor(Si) structures are examined at the frequency of 1 MHz and compared with the C–V characteristics of the conventional metal(Al)–SiO2–Si (MOS) structures. The density of the oxide charge Qo/q is extracted from the experimental results. Qo/q was found to be 1×1012 cm−2 for the MOS structures and 7×1011 cm−2 for the metal–carbon–oxide–silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers."
}
@article{tagkey2003881,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "34",
number = "9",
pages = "881 - 886",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00016-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000168",
key = "tagkey2003881"
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "IFC - ",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00140-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300140X",
key = "tagkey2003IFC"
}
@article{Mohamed2003321,
title = "Introduction to the low dimensional structures and devices conference (LDSD'2002) Fortaleza, Brazil: December 8–13, 2002",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "321 - 322",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00017-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300017X",
author = "Mohamed and Henini"
}
@article{Bimberg2003323,
title = "Quantum dots: lasers and amplifiers",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "323 - 328",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00018-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000181",
author = "Dieter Bimberg and Christian Ribbat",
keywords = "Amplifier",
keywords = "Laser",
keywords = "Frequency",
abstract = "Continuous wave room-temperature output power of ∼5 W for edge-emitters and of 1.2 mW for vertical-cavity surface-emitting lasers is realized for GaAs-based devices using InAs quantum dots (QDs) operating at 1.3 μm. Lasers emitting at 1140–60 nm useful as pump sources for Tm3+-doped fibers for frequency up-conversion to 490 nm reach output powers close to 12 W and show transparency current densities of 6 A/cm2 per dot layer, ηint=98% and αi=1.5 cm−1. Long operation lifetimes and radiation hardness are manifested. Cut-off frequencies of about 10 GHz and low α-factors are realized. Quantum dot semiconductor optical amplifiers (QD SOAs) demonstrate gain recovery times of 120–140 fs, 4–7 times faster than bulk/QW SOAs. The breakthrough became possible due to development of self-organized growth in QD technology."
}
@article{Raphael2003329,
title = "Challenges in the implementation of Nanoelectronics",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "329 - 332",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00019-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000193",
author = "Raphael and Tsu",
keywords = "Quantum wells",
keywords = "Quantum dots",
keywords = "Density of states",
abstract = "The world of solid-state electronics has moved in an ever-increasing pace toward man-made quantum devices starting from the introduction of man-made superlattices and quantum wells (QW) more than 30 years ago. Extremely small dimensions bring forth the common features of all these low dimensional structures and devices, such that the wave nature of electrons dominates. QW structures with planar contacts do not present problems with input/output (I/O). However, recent focus on nanoscale electronic devices with quantum dots runs into some serious problems in the implementation towards an industrial impact led by transistors and ICs. In addition to I/O problem, robustness, and redundancy, etc. must be solved before any system can move from a laboratory experiment to industrial application."
}
@article{M2003333,
title = "Self-assembled quantum dots on GaAs for optoelectronic applications",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "333 - 336",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00020-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300020X",
author = "M. and Henini",
keywords = "GaAs",
keywords = "Quantum dots",
keywords = "Laser diodes",
abstract = "In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum dot structures. This paper is intended to describe the laser applications of self-assembled quantum dots."
}
@article{daCunhaLima2003337,
title = "Spin transport through quantum dots",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "337 - 339",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00021-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000211",
author = "A.T. da Cunha Lima and E.V. Anda",
keywords = "Quantum dot",
keywords = "Magnetic field",
keywords = "Polarization",
abstract = "We investigate the spin polarized transport properties of a nanoscopic device constituted by a quantum dot connected to two leads. We show that through the manipulation of the gate potential applied to the dot it is possible to control, in a very efficient way, the intensity and polarization of the current that goes along the system."
}
@article{Hideki2003341,
title = "Formation of III–V low dimensional structures and their applications to intelligent quantum chips",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "341 - 345",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00022-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000223",
author = "Hideki and Hasegawa",
keywords = "Binary decision diagram",
keywords = "Intelligent quantum chips",
keywords = "Quantum wires",
abstract = "The present status of formation and electron device applications of III–V low dimensional structures is reviewed. Particular emphases are laid on recent efforts by the author's group on selective MBE growth of III–V nanowire networks and their applications to quantum (Q-) LSIs-based on the novel hexagonal binary decision diagram quantum circuit approach. Application to intelligent quantum chips is proposed."
}
@article{Janssens2003347,
title = "Type-II quantum dots in magnetic fields: excitonic behaviour",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "347 - 350",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00023-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000235",
author = "K.L. Janssens and B. Partoens and F.M. Peeters",
keywords = "Quantum dot",
keywords = "Magnetic fields",
keywords = "Excitonic behaviour",
abstract = "We calculated the ground state properties of an exciton in a type-II quantum dot in the presence of a perpendicular magnetic field. The dot is modelled by a quantum disk and we consider a type-II system, where the electron is confined in the disk, and the hole is located in the barrier material. In the first part, strain is neglected. The position of the hole and the magnetic field behaviour of the exciton are investigated as function of the disk radius R and thickness d. When strain is included, we show that strain can induce a type-I to type-II transition for the heavy hole and that the magnetic field is able to induce a heavy-to-light hole transition."
}
@article{Misiewicz2003351,
title = "Photomodulation spectroscopy applied to low-dimensional semiconductor structures",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "351 - 353",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00024-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000247",
author = "J. Misiewicz and G. Sęk and R. Kudrawiec and K. Ryczko and D. Gollub and J.P. Reithmaier and A. Forchel",
keywords = "Photomodulation",
keywords = "Quantum wells",
keywords = "Quantum dots",
abstract = "We present here few examples of application of photomodulation techniques, e.g. photoreflectance and phototransmittance, as excellent methods for the investigation of semiconductor device structures. The discussion is narrowed down to low-dimensional structures used as an active part of the infrared optoelectronic devices: from new material (GaInAsN) double quantum wells, good candidate for 1.3 and 1.55 μm telecommunication lasers, through InGaSb/GaSb quantum wells pretending to the application in the infrared gas sensors, to 980 nm InGaAs/GaAs quantum dot laser pump source for EDFA amplifiers."
}
@article{Vaccaro2003355,
title = "Lateral p–n junctions for high-density LED arrays",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "355 - 357",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00025-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000259",
author = "Pablo O. Vaccaro and A. Vorobev and N. Dharmarasu and T. Fleischmann and J.M. Zanardi Ocampo and S. Saravanan and K. Kubota and T. Aida",
keywords = "Lateral p–n junction",
keywords = "Molecular-beam epitaxy",
keywords = "Light-emitting diode",
abstract = "A light-emitting diode array was fabricated using a lateral p–n junction to inject carriers in the InGaAs active layer. The lateral p–n junction is formed in GaAs epilayers doped only with silicon and grown by molecular beam epitaxy on a patterned GaAs (311)A-oriented substrate. This design allows the use of electrically insulating carrier-confining barriers and coplanar contacts while simplifying device process. Light emission is uniform all over the 1200 dpi array and electroluminescence spectrum has a single peak at 960 nm."
}
@article{Mil'shtein2003359,
title = "p-HEMT with tailored field",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "359 - 361",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00146-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203001460",
author = "S Mil'shtein and P Ersland and S Somisetty and C Gil",
keywords = "p-HEMT",
keywords = "Field effect transistor",
keywords = "MOSFET",
abstract = "The high electron mobility in heterostructure devices stems from fact that electrons are injected into intrinsic layer of a semiconductor material and are confined into two-dimensional space of a heterostructure potential. However, non-linear distribution of the voltage along a transistor channel results in variation of depth and width of heterostructure potential. As in case of non-uniform electrical field in conventional field effect transistor, non-uniformity of this potential causes limitation of gain gm and operational frequency ft, increased level of noise and, most important, significantly impact the non-linearity of the gain. We illustrated our study with characteristics of tri-gate p-HEMT, fabricated on M/A-COM's high volume production AlGaAs/InGaAs process. The speed at which electrons traverse the channel was modified by providing the highest bias voltage on the first gate, and gradually decreasing the bias voltage on all subsequent gates. Thus tailored electrical field along the channel was the modeling and design base of new p-HEMTs. Manufactured devices carried in agreement with modeling, better saturation of current (large Early Voltage), significant linearity of the transconductance gm and better reliability."
}
@article{TP2003363,
title = "Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "363 - 370",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00026-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000260",
author = "T.P. and Ma",
keywords = "Gate dielectrics",
keywords = "Jet-vapor deposition",
keywords = "MOSFET",
abstract = "The principle of the Jet-Vapor Deposition (JVD) technique for thin dielectric deposition will be introduced, the properties of JVD silicon nitride (SiN), silicon oxide, and oxide/nitride/oxide (ONO) stacks as MOS gate dielectrics for Si, SiC, and GaN will be presented."
}
@article{Iwata2003371,
title = "A new type of quantum wells: stacking faults in silicon carbide",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "371 - 374",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00027-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000272",
author = "Hisaomi Iwata and Ulf Lindefelt and Sven Öberg and Patrick R. Briddon",
keywords = "Quantum wells",
keywords = "Stacking faults",
keywords = "Silicon carbide",
abstract = "We report on a new type of quantum wells with the width as thin as 10 Å, which are composed of SiC only, and consequently have ideal interfaces. These quantum wells are actually stacking faults in SiC. Certain types of stacking faults in SiC polytypes create small 3C-like regions, where the stacking sequences along the c-axis become locally cubic in the hexagonal host crystals. Since the conduction band offsets between the cubic and hexagonal polytypes are very large with the conduction band minima of 3C–SiC lower than that of the other polytypes, such thin 3C inclusions can introduce locally lower conduction bands, thus acting as quantum films perpendicular to the c-axis. One mechanism for the occurrence of stacking faults in the perfect SiC single crystals is the motion of partial dislocations in the basal planes, the partial dislocations leaving behind stacking fault regions."
}
@article{Cerqueira2003375,
title = "Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "375 - 378",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00028-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000284",
author = "M.F. Cerqueira and M. Stepikhova and M. Losurdo and M.M. Giangregorio and E. Alves and T. Monteiro and M.J. Soares and C. Boemare",
keywords = "Nanocrystalline silicon",
keywords = "X-ray diffractometry",
keywords = "Spectroscopic ellipsometry",
abstract = "Nanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency of Er-doped nc-Si films is strongly influenced by the microstructure and impurity content (i.e. H, O, Er), the photoluminescence characteristics are discussed in terms of the microstructure. The novelty of these films, if compared to usually investigated structures with the nanocrystals embedded in SiO2, is their relative high conductivity, which makes them attractive for device applications."
}
@article{Wang2003379,
title = "Controllable growth of semiconductor nanometer structures",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "379 - 382",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00029-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000296",
author = "Z.G Wang and J Wu",
keywords = "Molecular beam epitaxy",
keywords = "Nanostructures",
abstract = "Self-assembled quantum dots and wires were obtained in the InxGa1-xAs/GaAs and InAs/In0.52Al0.48As/InP systems, respectively, using molecular beam epitaxy (MBE). Uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the MBE growth parameters. In addition, some interesting observation on the InAs wire alignment on InP(001) is discussed."
}
@article{Razeghi2003383,
title = "High performance quantum cascade lasers at λ∼6 μm",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "383 - 385",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00030-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000302",
author = "M. Razeghi and S. Slivken and J. Yu and A. Evans and J. David",
keywords = "Quantum cascade laser",
keywords = "Threshold current density",
keywords = "Average power",
abstract = "This talk will focus on the recent efforts at the Center for Quantum Devices to deliver a high average power quantum cascade laser source at λ∼6 μm. Strain-balancing is used to reduce leakage for these shorter wavelength quantum cascade lasers. Further, the effect of reducing the doping in the injector is explored relative to the threshold current density and maximum average output power. Lastly, to demonstrate more of the potential of these devices, epilayer down bonding is explored as a technique to significantly enhance device performance."
}
@article{Arakawa2003387,
title = "Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW)",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "387 - 390",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00031-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000314",
author = "T Arakawa and K Tada and R Iino and T Suzuki and J.-H Noh and N Haneji and H Feng",
keywords = "Five-layer asymmetric coupled quantum well",
keywords = "Electrorefractive index change",
keywords = "Thickness fluctuation",
abstract = "We study in detail a modified structure of the five-layer asymmetric coupled quantum well (FACQW) for a large negative electrorefractive index change Δn. The influence of the layer thickness fluctuation on Δn of the modified FACQW is also discussed. Even with layer thickness fluctuation, the modified FACQW still maintains a much larger Δn than a conventional rectangular quantum well without thickness fluctuation. The results of photocurrent measurements of the modified FACQW qualitatively are in agreement with the theoretical analysis."
}
@article{Sun2003391,
title = "Si-based quantum staircase terahertz lasers",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "391 - 393",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00032-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000326",
author = "G. Sun and Richard A. Soref",
keywords = "SiGe/Si strain balanced superlattice",
keywords = "Quantum staircase laser",
keywords = "THz laser",
abstract = "Design results are presented for electrically pumped quantum staircase intersubband p-i-p SiGe/Si strain-balanced superlattice lasers to be operated at 77 K or higher. The wavelength of laser emission will be in the THz range. Two approaches of quantum staircase lasers will be presented, one utilizes the inverted light-hole effective mass, while the other inverted heavy-hole mass. Optical gain on the order of a few 100 cm−1 can be achieved for both laser designs."
}
@article{V2003395,
title = "Lattice dynamics in wide band gap materials based superlattices",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "395 - 399",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00033-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000338",
author = "V. and Lemos",
keywords = "Superlattices",
keywords = "Raman scattering",
keywords = "Nitrides",
abstract = "Lattice dynamics calculations in zinc blende group III nitrides superlattices were carried out assuming the existence of interface regions with variable thickness. The acoustic frequencies were observed to remain practically unchanged for all values of interface thickness from one to three monolayers. The dispersion relation, Raman spectrum and the atomic displacements of optical modes were found to be greatly affected by interfacing. Several Raman peaks shift toward the center position of the spectrum with increasing interface thickness. As a consequence, some of the Raman frequencies become quasi-coincident giving rise to highly prominent structures in the middle range spectrum. Effects of localization of atomic displacements at the interface regions are shown."
}
@article{Huq2003401,
title = "Electron emission from nanostructures",
journal = "Microelectronics Journal",
volume = "34",
number = "5–8",
pages = "401 - 404",
year = "2003",
note = "The Fourth International Conference on Low Dimensional Structures and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00034-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300034X",
author = "S.E Huq and N.S Xu",
keywords = "Electron emission",
keywords = "Silicon emitters",
keywords = "High-resolutions microscopy",
abstract = "Stable electron emission sources have been produced in plasma-etched single crystal silicon, coated with ultra-thin amorphous diamond, using a vacuum carbon arc source, at room temperature. Diamond films have been characterised using spectroscopy, EDX and high-resolution transmission electron microscopy. Fabricated devices require significantly lower threshold fields (3 V/μm) for operation, compared to uncoated emitters and show much reduced emission current fluctuations of 3% compared to 9% for untreated arrays."
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "IFC - ",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00123-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300123X",
key = "tagkey2003IFC"
}
@article{Koshevaya2003231,
title = "Superheterodyne amplification of sub-millimeter electromagnetic waves in an n-GaAs film",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "231 - 235",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00003-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920300003X",
author = "S. Koshevaya and V. Grimalsky and J. Escobedo-Alatorre and M. Tecpoyotl-Torres",
keywords = "Negative differential mobility",
keywords = "Superheterodyne amplification",
keywords = "n-GaAs film",
abstract = "A superheterodyne amplification of sub-millimeter electromagnetic waves in GaAs due to the negative differential mobility is analyzed. The nonlinearity arises from the modulation of concentration, due to a space charge wave, and from the ponderomotive force, due to electromagnetic waves. The case of resonant interaction of two traveling counter propagating electromagnetic waves and the space charge wave in a thin n-GaAs film placed into a dielectric waveguide is considered. The case of 2D electron gas is also analyzed. The simulation of this nonlinear interaction shows a certain increment of the amplification."
}
@article{Singh2003237,
title = "Defocusing image to pattern contact holes using attenuated phase shift masks",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "237 - 245",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00005-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000053",
author = "Navab Singh and Moitreyee Mukherjee-Roy and Sohan Singh Mehta",
keywords = "Defocus",
keywords = "Attenuated phase shift mask",
keywords = "Diffraction",
keywords = "Rayleigh resolution",
abstract = "The patterning of contact holes by selecting out-of-focus image plane (defocus) using attenuated phase shift masks (APSM) has been studied. Defocus is found to enhance the image modulation at low partial coherence for contact holes with negative local average of mask function. Semi-dense holes up to 130 nm in 8% APSM have been printed by 0.5 μm defocus at a partial coherence of 0.31 using KrF scanner with highest numerical aperture of 0.68. However, these holes were closed with in-focus imaging. Defocus is also found to be beneficial for patterning the pitches that have extensive side lobes with in-focus imaging."
}
@article{Belhardj2003247,
title = "Using microchannels to cool microprocessors: a transmission-line-matrix study",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "247 - 253",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00004-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000041",
author = "S. Belhardj and S. Mimouni and A. Saidane and M. Benzohra",
keywords = "Microprocessors",
keywords = "Microchannels",
keywords = "Transmission-Line-Matrix",
keywords = "Cooling",
abstract = "As microprocessors components density and clock frequency increase, so do heat dissipation. The heat results from Joule effect due to leakage currents in the components area or active region. This region is only few microns thick and can quickly reach destructing temperatures if heat is not quickly removed. On this critical issue depends the system reliability. The active region is separated from the ventilated heat sink by a silicon substrate and a metal integrated heat spreader, both hundreds of microns thick. This interface region is the microprocessor's heat transfer plate where heat exchange is achieved by conduction. Because of the localized heat source, the thermal spreading resistance of the interface region can be high. A novel way of spreading heat in that region is the use of microchannel arrays where an appropriate thermal compound or a phase change liquid can be trapped to increase heat transfer by conduction or to create micro-heat-pipes. Traditional cooling methods, with conventional and well optimised heat sinks, can then be used with less burden.
In this paper, the Transmission-Line-Matrix (TLM) technique is used to simulate the effect of microchannels on the temperature distribution in the active region. To minimize the interface heat resistance various microchannel and patterns are examined. In this part of the work, the microchannels are filled with the heat spreader material copper or aluminium. The results show an improved thermal transient behaviour and a reduced active region temperature in steady state."
}
@article{Golan2003255,
title = "Metal–insulator phase transition in vanadium oxides films",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "255 - 258",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00002-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000028",
author = "G. Golan and A. Axelevitch and B. Sigalov and B. Gorenstein",
keywords = "Vanadium oxide",
keywords = "Thin color films",
keywords = "Metal–insulator phase transition",
abstract = "Vanadium oxide films (VO2) are of a typical phase transition ranging between metal phase to a semi-conducting phase. The theoretical metamorphose temperature of VO2 is around 340 K (67 °C). This transition temperature is mostly governed by the deposition method in which the film was made, and the film's composition. Optical and electrical properties of VO2 films are dramatically changed during this phase transition, thus making it useful in many microelectronics and optoelectronics applications. In this work we evaluate several deposition methods of VO2 and their relations to the electro-optics properties of such films. The examined VO2 films consisted of various phases of the material. Best films to demonstrate a metal–insulator transition were made in vacuum evaporation of V powder in a tungsten boat, treated in argon–oxygen flow (10:1), at 400 °C. The temperature range of phase transitions was found at 16–80 °C. Resistivity changes and colors of the films were studied as well."
}
@article{Zhou2003259,
title = "Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experiments",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "259 - 264",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00006-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000065",
author = "H. Zhou and F.G. Shi and B. Zhao",
keywords = "Thickness dependent",
keywords = "Dielectric strength",
keywords = "Critical thickness",
keywords = "Plasma-enhanced chemical vapor deposition",
keywords = "Low-k dielectric",
abstract = "The experimental results obtained on the dielectric strength EB of carbon doped silicon dioxide thin films for various film thicknesses using I–V measurements with metal–insulator–semiconductor structures suggest a new relationship between the film thickness d and the dielectric strength EB, i.e. EB∝(d−dc)−n. This inverse power law relationship indicates the existence of a critical thickness dc which may correspond to an ultimate thickness limit below which the rate of detrapping of electron charges exceeds the rate of trapping and no dielectric breakdown can be observed. The newly obtained inverse power law relationship appears to be general since it is also supported by other published dielectric strength data for both amorphous and polycrystalline polymer thin films."
}
@article{Rault2003265,
title = "A probabilistic approach to determine radiative recombination carrier lifetimes in quantum well solar cells",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "265 - 270",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00007-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000077",
author = "Francis K. Rault and Ahmad Zahedi",
keywords = "Computational modelling",
keywords = "Quantum well solar cell",
keywords = "Radiative lifetimes",
abstract = "In this paper the author places forth a new approach to determine the radiative recombination lifetimes of photo-generated carriers in quantum well solar cells. The calculations are performed for a hypothetical AlxGa1−xAs/GaAs quantum well solar cell. A similar device for which existing data is available is used for comparison. The foundation of the approach is the use of the original equations proposed by Shockley et al. using the assumption that photo-carrier generation is probabilistically controlled, a new approach to photo-carrier generation is derived and determination of the carrier lifetimes is possible. The results obtained for the AlGaAs/GaAs cell fall within accuracy of the existing experimental data."
}
@article{Bchetnia2003271,
title = "New photoluminescence lines in Vanadium doped GaAs grown by MOVPE",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "271 - 274",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00195-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001957",
author = "A. Bchetnia and A. Rebey and B. El Jani and J. Cernogora and J.-L. Fave",
keywords = "V-doped GaAs",
keywords = "Metalorganic vapour phase epitaxy",
keywords = "Photoluminescence",
abstract = "We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15 K, by comparison with undoped layers grown in the same conditions, photoluminescence spectra of V-doped exhibited three new emission bands: at 1.41, 1 and 0.72 eV. The 1 and 0.72 eV band emissions were attributed to V2+ and V3+ intracenter emission, while the 1.41 eV band was suggested to be a donor-bound transition. The identity of the donor is tentatively attributed to a donor complex that associates vanadium to an arsenic vacancy. From Hall effect as function of temperature, the donor ionisation energy was estimated to be about 102±5 meV."
}
@article{Mailly2003275,
title = "Design of a micromachined thermal accelerometer: thermal simulation and experimental results",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "275 - 280",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00194-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001945",
author = "F. Mailly and A. Martinez and A. Giani and F. Pascal-Delannoy and A. Boyer",
keywords = "Thermal sensor",
keywords = "Accelerometer",
keywords = "Thermal analysis",
abstract = "This paper describes numerical simulation of a micromachined thermal accelerometer and experimental measurements. The sensor principle consists of a heating resistor, which creates a symmetrical temperature profile, and two temperature detectors symmetrically placed on both sides of the heater. When an acceleration is applied, the free convection is modified, the temperature profile becomes asymmetric and the two detectors measure the differential temperature. This temperature profile and sensor sensitivity according to the distance heater–detector have been studied using numerical resolution of fluid dynamics equations with the commercial code CFD2000/STORM: it shows that the optimum distance between the temperature detectors and the heater is about 300 μm. A thermal accelerometer with 3 pairs of detectors placed at 100, 300 and 500 μm from the heater was manufactured using the techniques of micromachining silicon and experimental measurements have shown a good agreement with the numerical simulations: the experimental optimum distance between heater and detectors seems to be close to 400 μm and the differential temperature of detectors is about 3 °C/g for an operating heater power of 54 mW and an heater temperature rise ΔT of 238 °C. The electrical sensitivity is then 2.5 mV/g."
}
@article{Zhang2003281,
title = "Microstructure study and hyper frequency electromagnetic characterization of novel hexagonal compounds",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "281 - 287",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00193-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001933",
author = "Hongguo Zhang and Praka Punchaipet and E.G Bruce and W.M Robert and Longtu Li and Ji Zhou and Yongli Wang and Zhenxing Yue and Zhilun Gui",
keywords = "Z-type novel ferrite",
keywords = "Zn incorporation",
keywords = "Morphology",
keywords = "Magnetic properties",
keywords = "Electrical properties",
abstract = "The physical characteristics and preparation of novel Z-type hexagonal compound, which have iron deficient composition of Ba3Co2(0.8−x)Cu0.4Zn2xFe23.5O41 (x≤0.30), was investigated. The results show that Zn has little effect on the morphology of compact and homogeneous ferrites with average 10–15 μm of lathy grain size, but make the formation temperature range narrow. In the range of Zn incorporation, the hexagonal cell lattice parameters (a and c) of ferrites reserve stable. However, the key magnetic and electrical properties, such as initial permeability, quality factor, resistivity, dielectric constant and magnetic hysteresis as well as Curie temperature were also characterized. The mechanisms involving in generating these variations were also discussed in this paper."
}
@article{Liu2003289,
title = "A novel hydrodynamic model for nanoscale devices simulation",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "289 - 296",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00172-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001726",
author = "Enfeng Liu and Ruqi Han and Erping Li and Ping Bai",
keywords = "Hydrodynamics model",
keywords = "Initial guess",
keywords = "Numerical stability",
keywords = "Quantum effect",
keywords = "Nanoscale device simulation",
abstract = "This paper presents a novel scheme to incorporate quantum effect in classical hydrodynamic model. The scheme can be applied to multi-dimensional and transient conditions and no additional equations are required to solve quantum potential, so complexity of equations is drastically reduced. Simulation results show consistent with that of Monte Carlo simulation. This technology provides an efficient method for investigating quantum effect in small size semiconductor devices. A new guess method for hydrodynamics model has also been proposed in this paper and a 2D hydrodynamic simulator based on quantum correction and new initial guess method has been developed. The solution obtained from DD model gives a good initial guess of HD model. Its advantage is it can achieve convergence after a few iterations because initial guess is closed to final solution. Two-dimensional simulations have been carried out on a few nanoscale devices. The results have been compared with that of other initial guess methods and the significant differences have been found, especially in numerical stability."
}
@article{Li2003297,
title = "Analytical GTO turn-off model under snubberless turn-off condition",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "297 - 304",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00170-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001702",
author = "Xuening Li and A.Q. Huang and Yuxin Li",
keywords = "Power devices",
keywords = "Modeling",
keywords = "Gate turn-off thyristor",
keywords = "Thyristor",
abstract = "Based on the analysis of numerical simulation results, an analytical turn-off model for the gate turn-off thyristor under snubberless condition is developed. The turn-off process predicted by the analytical model is in good agreement with numerical simulation."
}
@article{Yuan2003305,
title = "Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "305 - 312",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00102-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001027",
author = "Tian Yuan and Chua Soo Jin and Yixin Jin",
keywords = "GaInAsSb/GaSb",
keywords = "Infrared photodetectors",
keywords = "Triple-layer structure",
keywords = "Noise mechanisms",
keywords = "Detectivity",
abstract = "In this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.81/p1-Ga0.9In0.1As0.09Sb0.91 and N1-GaSb/n2-Ga0.9In0.1As0.09Sb0.91/p-Ga0.8In0.2As0.19Sb0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1–n2–p structure is more sensitive than that with the p1-side surface recombination velocity for the N–p2–p1 structure. In the N–p2–p1 structure with the incident light from the p1-side surface, two-color detection is achieved."
}
@article{Mile2003313,
title = "System-on-a-Chip: Design and Test: Rochit Rajsuman (Ed.); Artech House, Boston, 2000, 277 pages, plus XIII, Hardcover, ISBN 1-58053-107-5, £61.00",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "313 - 314",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00073-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000733",
author = "Mile and Stojcev"
}
@article{tagkey2003315,
title = "PatentsALERT",
journal = "Microelectronics Journal",
volume = "34",
number = "4",
pages = "315 - 319",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00196-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001969",
key = "tagkey2003315"
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "IFC - ",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(03)00010-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269203000107",
key = "tagkey2003IFC"
}
@article{Joshi2003169,
title = "Thermal challenges in next generation electronic systems",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "169 - ",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00184-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001842",
author = "Yogendra K Joshi and Suresh V Garimella"
}
@article{Marta2003171,
title = "New possibilities in the thermal evaluation, offered by transient testing",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "171 - 177",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00185-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001854",
author = "Marta and Rencz",
keywords = "Thermal testing",
keywords = "Thermal transient testing",
keywords = "Thermal modeling",
keywords = "Thermal transient evaluation",
keywords = "Structure functions",
keywords = "Partial thermal resistance",
keywords = "Die attach qualification",
abstract = "After giving an introductory overview of a method for the evaluation the thermal transient measurement results with the help of the structure functions, the use of the method of transient testing is presented by application examples. The first example shows how to control the quality of the die attachment or soldering with fast transient measurements and subsequent evaluation. The second example presents how transient testing can be used to determine thermal material parameters; e.g. the effective thermal conductivity of printed circuit boards."
}
@article{Liwei2003179,
title = "Thermal challenges in MEMS applications: phase change phenomena and thermal bonding processes",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "179 - 185",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00186-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001866",
author = "Liwei and Lin",
keywords = "Bubble",
keywords = "Phase change",
keywords = "Thermal bonding",
keywords = "Microelectromechanical systems",
abstract = "Two thermal challenges for current and next generation microelectromechanical systems (MEMS) applications are discussed. The first topic is the fundamental investigations of phase change phenomena in the microscale. It has been demonstrated that microresistive heaters can generate single, spherical and controllable thermal bubbles with diameters between 2 and 500 μm. Both simplified steady state and transient analyses that provide the scientific foundation of bubble nucleation in the microscale have been established but require further investigations. Several device demonstrations are briefed including microbubble-powered actuators, microbubble-powered nozzle-diffuser pumps and microbubble-powered micromixers for applications in microfluidic systems. The second topic addresses key heat transfer issues during the thermal bonding processes for MEMS fabrication and packaging applications. Basic thermal analyses on the microscale bonding processes have been developed while in-depth study is required to advance the understandings of the thermal bonding processes in the microscale. Successful new thermal bonding processes are introduced, including localized eutectic bonding, localized fusion bonding, localized chemical vapor deposition (CVD) bonding, localized solder bonding and nanosecond laser bonding for encapsulation of MEMS devices."
}
@article{Rightley2003187,
title = "Innovative wick design for multi-source, flat plate heat pipes",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "187 - 194",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00187-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001878",
author = "M.J Rightley and C.P Tigges and R.C Givler and C.V Robino and J.J Mulhall and P.M Smith",
keywords = "Heat pipe",
keywords = "Micro-heat pipe",
keywords = "IC cooling technology",
keywords = "Dryout",
keywords = "Porous media",
keywords = "High heat flux devices",
abstract = "We present a novel micro-heat pipe wick design and fabrication technique to significantly boost the effective thermal conductivity of the heat pipe relative to the monolithic substrate material. Extensive porous flow modeling of the process has provided critical information on the key parameters and the resulting anisotropic wick designs have shown robust performance improvements. A methanol charged copper device reported in this paper showed a maximum thermal conductivity of 760 W/m K prior to dry out. This represents a 1.9× increase over the conductivity of solid copper."
}
@article{Suzuki2003195,
title = "Dynamics of a liquid plug in a capillary duct powered by vapor explosion",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "195 - 200",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00188-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200188X",
author = "Osamu Suzuki and Yogendra K. Joshi and Wataru Nakayama",
keywords = "Liquid plug",
keywords = "Heat flux",
keywords = "Vapor explosion",
abstract = "A theoretical model of liquid plug dynamics powered by vapor explosion in a capillary duct has been proposed in order to provide guidance for designing a fluid propulsion device. The model can evaluate performance parameters such as the amount of useful work, efficiency of energy conversion, generated vapor volume and displacement volume rate of liquid. For example, the efficiency of energy conversion for water under atmospheric pressure and room temperature is calculated at 2.8%. The prediction of the vapor volume agrees well with existing experimental result. The prediction of the displacement volume rate also agrees well with the experimental result and suggests the existence of optimum heat flux at which the displacement volume rate is maximum."
}
@article{Zeng2003201,
title = "Nonequilibrium electron and phonon transport and energy conversion in heterostructures",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "201 - 206",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00189-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001891",
author = "Taofang Zeng and Gang Chen",
keywords = "Heterostructures",
keywords = "Quasi-equilibrium",
keywords = "Boltzmann transport equations",
abstract = "We establish a unified model dealing with the transport of electrons and phonons in double heterojunction structures with the coexistence of three nonequilibrium processes: (1) nonequilibrium among electrons, (2) nonequilibrium among phonons, and (3) nonequilibrium between electrons and phonons. Using this model, we investigate the energy conversion efficiency based on concurrent thermoelectric and thermionic effects on electrons and size effects on electrons and phonons. It is found that heterostructures can have an equivalent figure of merit higher than the corresponding bulk materials."
}
@article{Baig2003207,
title = "A study of temperature field in a GaN heterostructure field-effect transistor",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "207 - 214",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00190-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001908",
author = "M.A. Baig and M.Z.H. Khandkar and J.A. Khan and M.A. Khan and G. Simin and H. Wang",
keywords = "Gallium nitride",
keywords = "Heterostructure field-effect transistor",
keywords = "Temperature",
abstract = "This paper presents a three-dimensional finite element based heat transfer model for a Gallium Nitride-based Heterostructure Field-Effect Transistor (henceforth referred to as GaN HFET). Analyses were carried out to study the distribution of temperature in the HFET under steady-state conditions for two different steady-current inputs. Two different substrates for the HFET, sapphire and silicon carbide (SiC), were studied. The paper discusses the effect of using a heat sink and also that of using reasonable contact resistances on the substrate side of the HFET, on the temperature profile. In all cases, the gate region of the HFET was found to attain the highest temperature. Subsequent experiments to validate the results of the computational analysis were carried out at the Oakridge National Laboratories, Knoxville, and are also presented in this paper."
}
@article{Gwinn2003215,
title = "Performance and testing of thermal interface materials",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "215 - 222",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00191-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200191X",
author = "J.P Gwinn and R.L Webb",
keywords = "Thermal interface material",
keywords = "Thermal interface resistance",
keywords = "Contact resistance",
keywords = "Electronics cooling",
abstract = "The increasing power and reduced die size of CPUs used in computers increases a need for significantly improved thermal interface materials (TIM). The TIM is used to reduce contact resistance at the CPU–heat sink interface. This work provides a state-of-the-art assessment on ‘thermal interface materials’, including fundamentals, materials used, their performance, and how interface resistance is measured. The performance of new commercial interface materials is given, as well as discussion of the advantages and disadvantages of different materials. The report notes that the recommended interface test method does not necessarily duplicate the installation and operating conditions in an actual computer installation. Recommendations are presented on the design and operation of an apparatus intended to simulate actual computer installation conditions. The innovative Penn State ‘low melting point alloy’ thermal interface material is described and compared to other commercial materials."
}
@article{Moghaddam2003223,
title = "Evaluation of analytical models for thermal analysis and design of electronic packages",
journal = "Microelectronics Journal",
volume = "34",
number = "3",
pages = "223 - 230",
year = "2003",
note = "thermal challenges in next generation electronic systems (thermes 02)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00192-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001921",
author = "S. Moghaddam and M. Rada and A. Shooshtari and M. Ohadi and Y. Joshi",
keywords = "Orthotropic material",
keywords = "Heat spreading",
keywords = "Numerical modeling",
keywords = "Electronic packaging",
keywords = "Multi-chip module",
keywords = "Resistance network analysis",
abstract = "The objective of this study is to evaluate the use of several analytical compact heat transfer models for thermal design, optimization, and performance evaluation in electronic packaging. A model for heat spreading in orthotropic materials is developed. The developed model is used in conjunction with the other available heat transfer models in a resistance network for calculation of heat transfer rate and junction temperatures in a multi-chip module (MCM). Refrigeration cooled MCM of an IBM server is used to illustrate the methodology. Results of the analytical model and resistance network analysis are compared with a numerical solution. Capability of the analytical model in predicting the thermal field is discussed and effectiveness of using the analytical models in thermal design and optimization of electronic packages is demonstrated."
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "IFC - ",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00198-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001982",
key = "tagkey2003IFC"
}
@article{Kadlečı́ková200395,
title = "A study of synthetic sapphire by photoluminescence and X-ray diffraction",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "95 - 97",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00173-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001738",
author = "M. Kadlečı́ková and J. Breza and M. Veselý and I. Červeň",
keywords = "Sapphire",
keywords = "Raman spectroscopy",
keywords = "X-ray diffraction",
abstract = "We carry on with the topic described in our previous paper [Microelectron. J. 32 (2001) 955] in which Raman spectroscopy was employed to study synthetic sapphire. On a sample of α-Al2O3 which had served as a cryostat window and had been exposed to liquid nitrogen temperature for 2 years we measured three distinct types of Raman spectra in the wave number range 100–800 cm−1. On the edge of the sample, a Raman spectrum was measured similar to that of the γ-phase of Al2O3. With intention to confirm or to rule out potential conversion of phases under the effect of low temperature we have performed photoluminescence and X-ray diffraction (XRD) studies of the sample. Photoluminescence analysis has revealed a qualitative difference of the edge of the sample as compared with other spots of the sapphire disc. XRD has confirmed high crystallographic quality of the sapphire sample under study, nevertheless, we have not managed to resolve crystallographic modifications."
}
@article{Paavo200399,
title = "A new concept® for making fine line substrate for active component in polymer",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "99 - 107",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00171-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001714",
author = "Paavo and Jalonen",
keywords = "Adhesion",
keywords = "Build-up",
keywords = "Electroforming",
keywords = "Electrical deposition",
keywords = "Epoxy resin",
keywords = "Patterning",
keywords = "Roughness",
keywords = "Via holes",
abstract = "Miniaturization in electronics means finer lines and smaller vias in substrate technology. Very fine lines on the substrate are difficult to produce by conventional PWB manufacturing means. Thick copper layers are difficult to etch and the accuracy of conventional dry film photoresist is not necessarily sufficient. On the other hand, the environmental issues force us to reduce pollution.
In this paper a new concept (FSBC)® for making thin, buried active component in polymer, non-reinforced PWB, using electroformatting, dry process (sputtering), electrical lithography and growing processes, via holes and build-up method, is described.
To find reliability, tests of peel strength, roughness and some pre-treatments, which act on the adhesion of metal to the dielectric layer between circuits, have been made. Similarly in the tests, the capability of the electrodeposited photosensitive lithography has been compared with the results of the dry and the spin coated liquid films."
}
@article{Zheng2003109,
title = "Polymer residue chemical composition analysis and its effect on via contact resistance in dual damascene copper interconnects process integration",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "109 - 113",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00154-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001544",
author = "Y.S. Zheng and Q. Guo and Y.J Su and P.D. Foo",
keywords = "Dual damascene",
keywords = "Polymer residue",
keywords = "Copper damage",
keywords = "Polymer residue elimination",
keywords = "Copper interconnection",
keywords = "Electrical characteristic evaluation",
abstract = "During via and trench plasma etching in dual damascene copper interconnects process integration, polymer residues and copper damage were created as by-products of the dry-etch process. The polymer residue chemical composition and copper damage were analyzed by Auger electron spectroscopy. Analysis result indicated that besides copper, carbon, oxygen, and nitrogen and trace amounts of chlorine and sulphur were also observed. The polymer residue and copper damage are the important reasons of cause higher via contact resistance and lower via yield. It could be reduced and eliminated effectively using optimized plasma etch recipe, improved polymer residue removal methods and improved pre-treatment before metal deposition and so on."
}
@article{Lee2003115,
title = "Design and optimisation of a high-temperature silicon micro-hotplate for nanoporous palladium pellistors",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "115 - 126",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00153-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001532",
author = "S.M Lee and D.C Dyer and J.W Gardner",
keywords = "Silicon micro-hotplate",
keywords = "Pellistor",
keywords = "Catalytic gas sensor",
abstract = "The conventional design of the heater in a silicon micro-hotplate employ a simple meandering resistive track to form a square element. We show that this heater structure produces an uneven thermal profile characterised by a central hot spot with a significant variation in temperature of some 50 °C across the plate at an average temperature of 500 °C. Four novel micro-heater designs are reported here and fabricated on hotplates with an active area that ranges from (200×200) μm2 to (570×570) μm2 in order to vary systematically the ratio of membrane to heater length from a value of 5.0–2.7, respectively. All the designs have been simulated using a 3D electro-thermo-mechanical finite element model and results agree well with thermal profiles taken using an infrared microscope. One of the designs, referred to here as ‘drive-wheel’ structure, performs best and reduces the lateral variation in temperature to only ±10 °C. The different resistive micro-heaters have been calibrated with the lowest power consumption being 50 mW at 500 °C, which is well below the power consumption of any commercial pellistor; the maximum temperature before rupture being 870 °C. The micro-hotplates were electrochemically coated with a 20 nm thick mesoporous palladium catalyst and the pellistors' response tested to 2.5% methane in air. The micro-heaters were observed to be stable for a period of 1000 h and should provide a good platform for exploitation in commercial catalytic pellistors."
}
@article{Uen2003127,
title = "Generation lifetime improvement on MOS capacitor by fast neutron enhanced intrinsic gettering technique",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "127 - 131",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00152-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001520",
author = "Wu-Yih Uen and Shan-Ming Lan and Sen-Mao Liao and Jing-Ting Chiou",
keywords = "Minority-carrier generation lifetime",
keywords = "MOS capacitors",
keywords = "Fast neutron irradiation",
keywords = "Intrinsic gettering",
keywords = "Czochralski Si",
abstract = "Minority-carrier generation lifetime of MOS capacitors was improved by performing a fast neutron enhanced intrinsic gettering (NEIG) technique on the Czochralski (CZ) silicon wafers on which the devices were fabricated. With NEIG, the minority-carrier generation lifetime was possibly to be elevated high to 822 μs.
It was shown that the NEIG method can be used to substitute for the conventional three-step H–L–H (H: high temperature annealing for a long time, L: low temperature annealing for a long time) intrinsic gettering method to have equivalent or better electrical properties but saving the processing time."
}
@article{Saponara2003133,
title = "VLSI design investigation for low-cost, low-power FFT/IFFT processing in advanced VDSL transceivers",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "133 - 148",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00142-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001428",
author = "S. Saponara and L. Fanucci",
keywords = "Very large scale integration architectures",
keywords = "Low-power circuits",
keywords = "Fast fourier transform",
keywords = "Digital subscriber lines",
keywords = "Multicarrier modem",
abstract = "The problem of an efficient very large scale integration (VLSI) realization of the direct/inverse fast Fourier transform (FFT/IFFT) for digital subscriber line (DSL) applications is addressed in this paper. The design of scalable and very high-rate (VDSL) modem claims for large and high-throughput complex FFT computations while for massive and fast deployment of the xDSL family low-cost and low-power constraints are key issues. Throughout the paper we explore the design space at different levels (algorithm, arithmetic accuracy, architecture, technology) to achieve the best trade-off between processing performance, hardware complexity and power consumption. A programmable VLSI processor based on a FFT/IFFT cascade architecture plus pre/post-processing stages is discussed and characterized from the high-level choices down to the gate-level synthesis. Furthermore low-power design techniques, based on clock gating and data driven switching activity reduction, are used to decrease the power consumption exploiting the correlation of the FFT/IFFT coefficients and the statistics of the input signals. To this aim both frequency-division and time-division duplex schemes have been considered. The effects of supply voltage scaling and its consequence on circuit performance are examined in detail, as well as the use of different target technologies. Synthesis results for a 0.18 μm CMOS standard-cells technology show that the processor is suitable for real-time modulation and demodulation in scalable full-rate VDSL modem (64–4096 complex FFT, 20 Msample/s) with a power consumption of few tens of mW. These performances are very interesting when compared to state-of-the-art software implementations and custom VLSI ones."
}
@article{Rault2003149,
title = "Computational analysis of the refractive index of multiple quantum wells for QWSC applications",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "149 - 158",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00141-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001416",
author = "Francis K. Rault and Ahmad Zahedi",
keywords = "Electric field",
keywords = "Modified single effective oscillator model",
keywords = "Refractive index",
keywords = "Quantum well solar cell",
abstract = "In this paper, the authors extend on previous work regarding a new approach to calculating the refractive index of the quantum wells of a quantum well solar cell device. The new approach is computational and considers the presence of an electric field perpendicular to the quantum well layers. The model is based on the modified single effective oscillator (MSEO) model. The MSEO model is dependent upon three specific parametric equations. Using the relationships between these equations and how electric field effects these three parameters. The effects of the electric field on the refractive index of the quantum well layer can be determined. Computational analysis under AM 1.5 conditions for a hypothetical quantum well structure is performed with any discrepancies in the approach discussed."
}
@article{tagkey2003159,
title = "Erratum for Patents Alert[Microelectronics Journal 33 (2002) 683–686]",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "159 - ",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00104-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001040",
key = "tagkey2003159"
}
@article{Mile2003161,
title = "Analog Design for CMOS VLSI Systems: Franco Maloberti (Ed.); Kluwer Academic Publishers, Dordrecht, 2001, 374 pages, plus XIII, hardcover, ISBN 0-7923-7550-5",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "161 - ",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00072-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000721",
author = "Mile and Stojcev"
}
@article{tagkey2003163,
title = "Patents ALERT",
journal = "Microelectronics Journal",
volume = "34",
number = "2",
pages = "163 - 168",
year = "2003",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00167-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001672",
key = "tagkey2003163"
}
@article{tagkey2003IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "IFC - ",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00176-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001763",
key = "tagkey2003IFC"
}
@article{Leveugle20031,
title = "Special section on defect and fault tolerance in VLSI systems",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "1 - ",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00123-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001234",
author = "Régis Leveugle and Glenn Chapman"
}
@article{Karimi20033,
title = "Parallel testing of multi-port static random access memories",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "3 - 21",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00124-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001246",
author = "F. Karimi and S. Irrinki and T. Crosby and N. Park and F. Lombardi",
keywords = "Memory testing",
keywords = "Embedded memory",
keywords = "Multi-port",
keywords = "Parallel testing",
abstract = "This paper presents a novel approach for testing multi-port memories. This approach is based on the parallel execution of the testing process so that inter-port faults (shorts and coupling faults) can be detected at no loss of coverage and with no increase in the number of tests compared with a single-port memory. The parallelization is based on partitioning the memory into so-called segments; in each phase, the operation of a port is restricted to a segment. The proposed approach utilizes parallel segment accesses by arranging the ports on a pair-wise basis (one port for reading and the second port for writing); this permits an efficient utilization of the ports and full coverage of inter-port faults for both normal and mirror layouts. A port assignment process is utilized together with the partitioning of the memory; it considers the functionalities of the ports and their relation with respect to the addresses and the placement of the cells. It is shown that the test complexity of the proposed approach is independent of the number of ports. Simulation results are presented. A BIST circuitry capable of embedding and controlling this parallel approach is also proposed; it is shown that the BIST implementation is O(N log N) where N is the number of ports."
}
@article{Metra200323,
title = "Scan flip-flops with on-line testing ability with respect to input delay and crosstalk faults",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "23 - 29",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00125-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001258",
author = "C. Metra and S. Di Francescantonio and M. Favalli and B. Riccò",
keywords = "On-line testing",
keywords = "Scan flip-flops",
keywords = "Crosstalk faults",
keywords = "Delay faults",
keywords = "Self-checking ability",
abstract = "We propose a possible modification to the internal structure of scan flip-flops, which allows the online detection of delay and crosstalk faults affecting their input. Our solution allows to obtain, together with the flip-flop output datum, an indication denoting whether or not the provided datum is incorrect, because of an input crosstalk or delay fault. The proposed solution features self-checking ability with respect to a wide set of possible internal faults, including node stuck-ats, transistor stuck-ons and stuck-opens, resistive bridgings, delays, transient and crosstalk faults."
}
@article{Wu200331,
title = "Concurrent error detection of fault-based side-channel cryptanalysis of 128-bit RC6 block cipher",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "31 - 39",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00126-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200126X",
author = "Kaijie Wu and Piyush Mishra and Ramesh Karri",
keywords = "Concurrent error detection",
keywords = "Cryptanalysis",
keywords = "RC6 block cipher",
keywords = "FPGA",
abstract = "Fault-based side channel cryptanalysis is very effective against symmetric and asymmetric encryption algorithms. Although straightforward hardware and time redundancy based concurrent error detection (CED) architectures can be used to thwart such attacks, they entail significant overhead (either area or performance). In this paper we investigate two systematic approaches to low-cost, low-latency CED for symmetric encryption algorithm RC6. The proposed techniques have been validated on FPGA implementations of RC6, one of the advanced encryption standard finalists."
}
@article{Gil200341,
title = "Study, comparison and application of different VHDL-based fault injection techniques for the experimental validation of a fault-tolerant system",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "41 - 51",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00128-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001283",
author = "D Gil and J Gracia and J.C Baraza and P.J Gil",
keywords = "Dependability",
keywords = "Experimental validation",
keywords = "Fault injection techniques",
keywords = "VHDL simulation",
keywords = "Fault-tolerance mechanisms",
abstract = "In this work different VHDL-based fault injection techniques (simulator commands, saboteurs and mutants) have been compared and applied in the validation of a fault-tolerant system. Some extensions and implementation designs of these techniques have been introduced. As a complement of these injection techniques, a wide set of fault models (including several non-usual models) have been implemented. We have injected both transient and permanent faults on the system model, using two different workloads, with the help of a fault injection tool that we have developed. We have studied the pathology of the propagated errors, measured their latencies, and calculated both detection and recovery coverages. Results show that coverages for transient faults can be obtained quite accurately with any of the three techniques. This enables the use of different abstraction level models for the same system. We have also verified significant differences in implementation and simulation cost between the studied injection techniques."
}
@article{Civera200353,
title = "New techniques for efficiently assessing reliability of SOCs",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "53 - 61",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00127-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001271",
author = "P Civera and L Macchiarulo and M Rebaudengo and M Sonza Reorda and M Violante",
keywords = "System-On-a-Chip",
keywords = "Single Event Upset",
keywords = "Fault Injection",
abstract = "In this paper we propose an approach to speed-up Fault Injection campaigns for the evaluation of dependability properties of complex digital systems. The approach exploits FPGA devices for system emulation, and new techniques are described, allowing emulating the effects of faults and to observe faulty behavior. Thanks to its flexibility and efficiency, the approach is suitable to be applied to SOC devices. The paper points out the flexibility of the approach, able to inject different faults of different types in custom logic, memory blocks, and processor cores. The proposed approach combines the speed of hardware-based techniques, and the flexibility of simulation-based techniques. Experimental results are provided showing that speed-up figures of up to 3 orders of magnitude with respect to state-of-the-art simulation-based techniques can be achieved."
}
@article{Lee200363,
title = "The measurement of the dielectric and optical properties of nano thin films by THz differential time-domain spectroscopy",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "63 - 69",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00139-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001398",
author = "Kwang-Su Lee and Toh-Ming Lu and X.-C Zhang",
keywords = "THz differential time-domain spectroscopy",
keywords = "Thin films",
keywords = "Optical property",
keywords = "Dielectric",
abstract = "As feature sizes of circuits and devices approach 100 nm and chip frequencies climb into the upper GHz to THz range, it becomes increasingly important to have a convenient method of characterizing properties of thin dielectric films in the GHz to THz frequency range. THz time-domain spectroscopy provides a non-contact, non-destructive and highly sensitive optical tool to characterize the dielectric and optical properties of micron to nanometer scaled thin films at GHz and THz frequencies. The measurement of the dielectric and the optical properties of nanometer scaled dielectric films is performed using the THz differential time-domain spectroscopy. The real and imaginary parts of the complex dielectric constants and the optical constants of a variety of nano thin films are measured at GHz and THz frequencies."
}
@article{Yang200371,
title = "Numerical investigation of characteristics of p-channel Ge/Si hetero-nanocrystal memory",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "71 - 75",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00138-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001386",
author = "H.G. Yang and Y. Shi and L. Pu and S.L. Gu and B. Shen and P. Han and R. Zhang and Y.D. Zhang",
keywords = "Ge/Si",
keywords = "Nanocrystal",
keywords = "Memory",
keywords = "Hole tunneling",
abstract = "The characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory have been investigated numerically considering mainly hole-tunneling process. Owing to the advantages of a compound potential well and a higher band offset at the valence band compared with the p-channel Si nanocrystal based MOSFET memory and n-channel Ge/Si hetero-nanocrystal based MOSFET memory, the present structure shows that the holes have a longer retention time. Moreover, this kind of device keeps on having high-speed writing/erasing in the direct-tunneling ultrathin oxide regime. It would be expected to solve the contradictory problem between high-speed programming and long retention, therefore, the performance would be substantially improved."
}
@article{Kaushik200377,
title = "Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "77 - 83",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00140-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001404",
author = "N. Kaushik and A. Kranti and M. Gupta and R.S. Gupta",
keywords = "Silicon VDMOS",
keywords = "Power MOSFET",
keywords = "Electric field distribution",
keywords = "Drain current",
keywords = "Quasi-saturation",
keywords = "Cell spacing",
abstract = "This paper presents a methodology for modeling the electric field distribution in the vertical direction of VDMOS power transistors, considering the effects of cell spacing and drain voltage. An accurate and consistent extraction technique is developed to extract the values of various important parameters based on non-linear and multivariable regression techniques for the first time. The generalized form of electric field distribution enables the physical modeling of drain current at the onset of quasi-saturation considering the effect of non-uniform electron distribution in the n-epi region. Results so obtained are in good agreement with PISCES simulation over wide range of device parameters. The proposed model will be highly suitable for CAD (Computer Aided Design) tools in HVIC applications."
}
@article{Huang200385,
title = "Analog signal generator for BIST of wideband IF signals bandpass sigma–delta modulator",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "85 - 91",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00106-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001064",
author = "Feng Huang and Xubang Shen and Xuecheng Zou and Chaoyang Chen",
keywords = "Digital intermediate frequency",
keywords = "Sigma–delta modulation",
keywords = "Bandpass ADC",
keywords = "MADBIST",
keywords = "Clock jitter",
keywords = "Pulse density modulation",
abstract = "This paper presents improvements in generation of wideband and high dynamic range analog signal for area-efficient MADBIST, especially for the on-chip testing of wireless communication IF digitizing sigma–delta modulator chip. Via increasing the order of the one-bit bandpass sigma–delta modulation algorithm up to 12 and using finite repetitious bitstream approximating scheme, it can achieve great improvements in signal bandwidth instead of purity at the cost of very little hardware overhead. Another contribution in this work is to provide the theoretical analysis of the reconstructed signal degradation due to harmonic distortion and clock jitter. Such on-chip analog stimulus generation scheme is especially fit for IF digitizing bandpass sigma–delta modulator chip's production-time testing and in-the-field diagnostics. The technique can also be extended to mixed-signal communication SoC built-in-self-test."
}
@article{Mile200393,
title = "Data structures with C++ using STL, 2/e: William Ford, William Top (Eds.); Prentice Hall, Upper Saddle River, NJ, 2002, 1037 pages, hardcover, ISBN 0-13-085850-1, plus XXVI",
journal = "Microelectronics Journal",
volume = "34",
number = "1",
pages = "93 - 94",
year = "2003",
note = "Special Section on Defect and Dault Tolerance in VSLI Systems (DFT)",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00044-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000447",
author = "Mile and Stojcev"
}
@article{tagkey2002IFC,
title = "IFC-editorial board",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "IFC - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00156-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001568",
key = "tagkey2002IFC"
}
@article{Neil20021031,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1031 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00107-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001076",
author = "Neil and Bergmann"
}
@article{Mickan20021033,
title = "Double modulated differential THz-TDS for thin film dielectric characterization",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1033 - 1042",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00108-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001088",
author = "Samuel P Mickan and Kwang-Su Lee and Toh-Ming Lu and Jesper Munch and Derek Abbott and X.-C Zhang",
keywords = "Terahertz",
keywords = "Thin films",
keywords = "Spectroscopy",
abstract = "Terahertz differential time-domain spectroscopy (DTDS) is a new technique that uses pulsed terahertz radiation to characterize the optical properties of thin dielectric films. Characterizing thin films in the GHz to THz range is critical for the development of new technologies in integrated circuitry, photonic systems and micro-electro-mechanical systems. There are potential applications for gene and protein chips. This paper shows how DTDS can be combined with double modulation in the pump-probe system to improve sensitivity by an order of magnitude. An iterative algorithm is presented to estimate the optical properties of a given thin film. The technique is experimentally verified using 1-μm-thick samples of silicon dioxide on silicon."
}
@article{Ferguson20021043,
title = "Identification of biological tissue using chirped probe THz imaging",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1043 - 1051",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00109-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200109X",
author = "B Ferguson and S Wang and D Gray and D Abbott and X.-C Zhang",
keywords = "Terahertz",
keywords = "T-ray imaging",
keywords = "Chirped pulse",
keywords = "Linear-filter modelling",
keywords = "Classification",
abstract = "We consider the application of pulsed THz imaging systems in biomedical diagnostics and mail/packaging inspection. The sub-millimetre spectroscopic measurements obtained from T-ray systems contain a wealth of information about the sample under test. We demonstrate that different types of tissue can be classified based on their terahertz response measured with the chirped probe pulse technique. We demonstrate the performance of a quadratic classifier using linear filter models for feature extraction in the discrimination between different tissues.
Modern THz systems are hindered by the slow acquisition speed. The chirped probe pulse technique offers a significant improvement in this context. We present the terahertz responses of biological samples measured using a chirped probe pulse, and discuss the problem of data processing and extracting sample characteristics."
}
@article{Pakes20021053,
title = "Modelling of electrostatic gate operations in the Kane solid state quantum computer",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1053 - 1058",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00110-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001106",
author = "Chris I. Pakes and Cameron J. Wellard and David N. Jamieson and Lloyd C.L. Hollenberg and Steven Prawer and Andrew S. Dzurak and Alex R. Hamilton and Robert G. Clark",
keywords = "Smart structures and materials",
keywords = "Solid state quantum computation",
keywords = "Technology computer aided design",
abstract = "The nuclear spin quantum computer proposed by Kane [Nature 393 (1998) 133] exploits as a qubit array 31P dopants embedded within a silicon matrix. Single-qubit operations are controlled by the application of electrostatic potentials via a set of metallic ‘A’ gates, situated above the donors, on the silicon surface, that tune the resonance frequency of individual nuclear spins, and a globally applied RF magnetic field that flips spins at resonance. Coupling between qubits is controlled by the application of potentials via a set of ‘J’ gates, between the donors, that induce an electron-mediated coupling between nuclear spins. We report the results of the study of the electric field and potential profiles arising within the Kane device from typical gate operations. The extent to which a single nuclear spin can be tuned independently of its neighbours, by operation of an associated A-gate, is examined and key design parameters in the Kane architecture are addressed. Implications for current fabrication strategies involving the implantation of 31P atoms are discussed. Solution of the Poisson equation has been carried out by simulation using a TCAD modelling package (Integrated Systems Engineering AG)."
}
@article{SF20021059,
title = "A novel topology for grounded-to-floating resistor conversion in CMOS technology",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1059 - 1069",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00111-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001118",
author = "S.F. and Al-Sarawi",
keywords = "Active floating resistors",
keywords = "Very low frequency BP filter",
keywords = "Low frequency differentiator",
keywords = "Artificial insect vision",
keywords = "Pacemaker",
abstract = "A new circuit topology to convert grounded resistors to an equivalent floating resistor is presented and discussed. The value of the resulting floating resistor equals the sum of the two grounded resistors. The new topology can be used to convert either passive, active grounded resistors or active grounded conductances. The new topology is used in the design of a current controlled very high value floating resistor in the range of GΩ. This was achieved by utilising the output conductance of two matched transistors operating in the subthreshold region and biased using a 500 nA current. The practicality of the new topology is demonstrated through the design of a very low frequency bandpass filter for artificial insect vision and pacemaker applications. Simulations results using Level 49 model parameters in HSPICE show an introduced total harmonic distortion of less than 0.25% for a 1 Vpp input signal in a 3.3 V 0.25 μm CMOS technology. Statistical modelling of the new topology is also presented and discussed."
}
@article{Celinski20021071,
title = "Low depth, low power carry lookahead adders using threshold logic",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1071 - 1077",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00112-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200112X",
author = "Peter Celinski and Jose F. López and S. Al-Sarawi and Derek Abbott",
keywords = "Threshold logic",
keywords = "Low power",
keywords = "Carry lookahead addition",
abstract = "This paper describes a low power threshold logic-gate based on a capacitive input, charge recycling differential sense amplifier latch. The gate is shown to have low power dissipation and high operating speed, as well as robustness under process, temperature and supply voltage variations. This is followed by the main result, which is the development of a novel, low depth, carry lookahead addition scheme based on threshold logic. One such adder is also designed and simulated using the proposed gate."
}
@article{McDonnell20021079,
title = "An analysis of noise enhanced information transmission in an array of comparators",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1079 - 1089",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00113-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001131",
author = "Mark D. McDonnell and Derek Abbott and Charles E.M. Pearce",
keywords = "Comparator",
keywords = "Threshold device",
keywords = "Optimal quantisation",
keywords = "Digital multibeam steering",
keywords = "Flash",
keywords = "ADC",
keywords = "Transmitted information",
keywords = "Mutual information",
keywords = "Stochastic resonance",
keywords = "Suprathreshold stochastic resonance",
keywords = "Neuron model",
keywords = "Dithering",
abstract = "An array of N comparators subject to the same input signal and independent additive noise, with the outputs from each comparator summed, is a useful noise model for a range of systems including flash analog-to-digital converters, Digital Multibeam Steering sonar arrays and parallel neurons. It has previously been shown that for certain threshold configurations the transmitted information through such an array is maximised for non-zero noise. This behaviour has been termed Suprathreshold Stochastic Resonance (SSR) [1] and in this paper we show that SSR occurs for a number of different signal and noise distributions. Also presented is an analysis of the variance of the quantisation error incurred when all thresholds are set equal to the signal mean, for Gaussian and uniform distributions. It is shown that the minimum error variance is given by a non-zero value of noise."
}
@article{Bermak20021091,
title = "A vision sensor with on-pixel ADC and in-built light adaptation mechanism",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1091 - 1096",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00114-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001143",
author = "Amine Bermak and Abdessellam Bouzerdoum and Kamran Eshraghian",
keywords = "CMOS vision sensors",
keywords = "CMOS imagers",
keywords = "Light adaptation",
keywords = "VLSI",
keywords = "Pulse frequency modulation",
abstract = "In this paper we propose an on-pixel Analogue-to-Digital Converter (ADC) based on pulse frequency modulation (PFM) scheme. This PFM based converter presents a viable solution for pixel-level based ADC. It uses a simple and robust circuit that can be implemented in a compact area resulting in a 23% fill-factor for a digital vision sensor in 0.25 μm CMOS technology. An in-built light adaptation mechanism has also been implemented which allows the sensor to better adapt to low-light intensity or to adjust the sensor saturation level. As a consequence, the proposed sensor features a programmable dynamic range. Image lag is eliminated since a reset of the photodetector is performed after the conversion period. A prototype comprising a 32×32 pixel array has been implemented in CMOS 0.25 μm technology. Each pixel occupies an area of 45×45 μm2 with an average power consumption of 85 μW per pixel."
}
@article{Tubı́o20021097,
title = "ATM over SDH: design of a STM-16c transceiver using GaAs technology",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1097 - 1105",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00115-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001155",
author = "O Tubı́o and R Esper-Chaı́n and F González and F Tobajas and V de Armas and J.A Montiel and R Sarmiento",
keywords = "Direct Coupled FET Logic",
keywords = "Synchronous Digital Hierarchy",
keywords = "Asynchronous Transfer Mode",
keywords = "STM-16c",
keywords = "OC-48c",
abstract = "This article describes an ATM transceiver implementation with add/drop function over Synchronous Digital Hierarchy (SDH) able to handle STM-16c (OC-48c) signals. The design has been developed using Vitesse HGaAs-IV technology using Direct Coupled FET Logic (DCFL) standard cells and obtaining, in this way, a logic gate level description which could be easily exportable to any technology."
}
@article{EsperChaı́n20021107,
title = "Differential current mode serial link for 2 Gb/s in GaAs technology",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1107 - 1114",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00116-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001167",
author = "R Esper-Chaı́n and F Tobajas and R Sarmiento",
keywords = "High-speed serial links",
keywords = "Differential current mode",
keywords = "Power dissipation",
abstract = "Today's data communication systems are demanding increasing off-chip data rates. To satisfy this demand, high-speed serial links are used, saving area and power dissipation compared to highly parallel buses. However, power dissipation and noise generated by this system is still a critical issue. In this article, a novel approach using differential current mode is presented, which combines low power dissipation with low noise generated due to the reduced power transmission."
}
@article{González20021115,
title = "Morphological processor for real-time image applications",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1115 - 1122",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00117-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001179",
author = "F. González and O. Tubı́o and F. Tobajas and V. De Armas and R. Esper-Chaı́n and R. Sarmiento",
keywords = "Mathematical morphology",
keywords = "Image processing",
keywords = "Real time",
keywords = "High-speed adders",
keywords = "GaAs",
abstract = "Mathematical morphology (MM) appears as a theory that can solve some drawbacks of the classical lineal image processing. Linear filters generate a spatial distortion from initial image, what gives as result that specific algorithms are usually needed for each process with a complexity that cannot be implemented in VLSI systems for real time image processing. MM overcome the inherent drawbacks of the linear processing based on the comparison of an initial image with some well-known geometric figures.
In this paper we present the implementation of a specific processor that computes MM basic operations. Using a clock frequency of 250 MHz this processor is able to handle real time 512×512 pixels video images. MM allows non-linear processing of images and it is based on dilation and erosion operations using a geometric figure called structural element (SE). More complex image processing can be performed using these two basic operations. In this implementation the SE of 3×3 pixels was chosen. 0.6 μm HGaAs standard cells technology, from Vitesse Semiconductor Corporation, has been used achieving a logic level gate description with the possibility of migration to another technologies."
}
@article{López20021123,
title = "Design of a 270 MHz/340 mW processing element for high performance motion estimation systems application",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "1123 - 1134",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00118-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001180",
author = "J.Fco López and P Cortés and S López and R Sarmiento",
keywords = "Gallium arsenide",
keywords = "VLSI",
keywords = "Motion estimation",
keywords = "Block-matching",
keywords = "MPEG",
abstract = "Emerging architectures, technologies and strategies applied to the development of systems for video processing will alleviate the restrictions imposed by limited bandwidth in present communication channels. In this article, the use of GaAs technology together with the application of different techniques applied to existing architectures for motion estimation developed in the literature, are presented. Among the several possible searching methods to compute the block-matching algorithm (BMA), the full-search BMA (FBMA) has obtained great interest from the scientific community due to its regularity, optimal solution and low control overhead which simplifies its VLSI realization. On the other hand, its main drawback is the demand of an enormous amount of computation. There are different ways of overcoming this factor, being the use of advanced technologies, such as gallium arsenide (GaAs), the one adopted in this article together with different techniques to reduce area overhead. The implementation of a 270 MHz processing element (PE) for a FBMA scheme is presented in this paper. From the results obtained for this basic module, an implementation for MPEG applications is proposed, leading to an architecture running at 145 MHz with a power dissipation of 3.48 W and an area of 11.5 mm2."
}
@article{tagkey2002III,
title = "List of contents",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "III - XI",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00164-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001647",
key = "tagkey2002III"
}
@article{tagkey2002XIII,
title = "Author index",
journal = "Microelectronics Journal",
volume = "33",
number = "12",
pages = "XIII - XVI",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00165-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001659",
key = "tagkey2002XIII"
}
@article{tagkey2002IFC,
title = "IFC-editorial board",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "IFC - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00144-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001441",
key = "tagkey2002IFC"
}
@article{Yukihiro2002873,
title = "Special section on SASIMI2001",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "873 - 874",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00067-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000678",
author = "Yukihiro and Nakamura"
}
@article{Kambe2002875,
title = "Trend of system level design and an approach to C-based design",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "875 - 880",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00068-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200068X",
author = "Takashi Kambe and Akihisa Yamada and Masayuki Yamaguchi",
keywords = "C-based design",
keywords = "System level design",
keywords = "Bach system",
abstract = "System level design study group in EDA technical committee of JEITA has researched the trends of system level design technologies from various aspects of views so as to define an ideal design flow and methodology. The results of the investigations consist of (1) problems and requirements from system level designers (needs), (2) current status of system level design tools (seeds), (3) standardization activities for system level design languages, and so on. They also proposed a desirable system level design flow taking account of the needs and the seeds.
In this paper, we introduce the summary of their works. After that, I describe an approach to a C-based architecture design, called Bach, which we have developed. The features of the Bach system are (1) C-based user language with untimed semantics which is suitable for large-scale circuit design, (2) a fast bit-accurate simulator at the C level, (3) a high level synthesizer which can compile a program describing the untimed behavior of hardware into RTL VHDL. Using the example of an MPEG-4 video codec design, we summarize its design flow and effects."
}
@article{August2002881,
title = "A disciplined approach to the development of platform architectures",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "881 - 890",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00069-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000691",
author = "D.I. August and K. Keutzer and S. Malik and A.R. Newton",
keywords = "Platform–architecture development",
keywords = "Retargetable compilation",
keywords = "Application specific instruction set processors (ASIPs)",
keywords = "Mescal project",
abstract = "Silicon capability has enabled the embedding of an entire system on a single silicon die. These devices are known as systems-on-a-chip. Currently, the design of these devices is undisciplined, expensive, and risky. One way of amortizing the cost and ameliorating this design risk is to make a single integrated circuit serve multiple applications, and the natural way of enabling this is through end-user programmability. The aim of the MESCAL project, which is the subject of this paper, is to introduce a disciplined approach to producing reusable architectural platforms that can be easily programmed to meet a variety of applications. (MESCAL stands for Modern Embedded Systems, Compilers, Architectures, and Languages.)"
}
@article{Jerraya2002891,
title = "Application-specific multiprocessor Systems-on-Chip",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "891 - 898",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00070-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000708",
author = "Ahmed Amine Jerraya and Amer Baghdadi and Wander Cesário and Lovic Gauthier and Damien Lyonnard and Gabriela Nicolescu and Yanick Paviot and Sungjoo Yoo",
keywords = "Multiprocessor Systems-on-Chip",
keywords = "Hardware",
keywords = "Multiprocessor architecture",
abstract = "It often happens that designers have to integrate different instruction-set processors on a single chip. Typical applications are wireless, image processing, xDSL, network and game processors. This paper deals with the three main problems that make the design of application-specific heterogeneous multiprocessor Systems-on-Chip very hard and expensive:•
higher level specification;
•
software support packages design;
•
on-chip HW/SW communication design."
}
@article{Stojadinovic2002899,
title = "Effects of burn-in stressing on radiation response of power VDMOSFETs",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "899 - 905",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00121-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001210",
author = "N Stojadinovic and S Djoric-Veljkovic and I Manic and V Davidovic and S Golubovic",
keywords = "Power MOSFETs",
keywords = "Radiation tolerance",
keywords = "Reliability screening",
keywords = "Oxide-trapped charge",
keywords = "Interface traps",
abstract = "The effects of pre-irradiation burn-in stressing on radiation response of power VDMOSFETs have been investigated. Larger irradiation induced threshold voltage shift in stressed, and more considerable mobility reduction in unstressed devices have been observed, confirming the necessity of performing the radiation qualification testing after the reliability screening of power MOSFETs. The underlying changes of gate oxide-trapped charge and interface trap densities have been calculated and analysed in terms of the mechanisms responsible for pre-irradiation stress effects. The buildup of oxide-trapped charge appeared to be almost independent of device pre-irradiation stress, while the buildup of interface traps was somewhat less pronounced in stressed devices. Passivation of interface-trap precursors due to diffusion of hydrogen related species (originating either from package inside or gate oxide adjacent structures) from the bulk of the oxide towards the interface has been proposed as a mechanism responsible for the suppressed interface-trap buildup in pre-irradiation stressed devices."
}
@article{Atanassova2002907,
title = "Influence of oxidation temperature on the microstructure and electrical properties of Ta2O5 on Si",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "907 - 920",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00120-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001209",
author = "E Atanassova and D Spassov and A Paskaleva and J Koprinarova and M Georgieva",
keywords = "Thin Ta2O5 film",
keywords = "Dielectric constant",
keywords = "DRAMs",
keywords = "Leakage current",
keywords = "Microstructure",
abstract = "The effect of the oxidation temperature (673–873 K) on the microstructural and electrical properties of thermal Ta2O5 thin films on Si has been studied. Auger electron spectroscopy and X-ray photoelectron spectroscopy results revealed that the films are non-stoichiometric in the depth; an interfacial transition layer between tantalum oxide and Si substrate, containing presumably SiO2 was detected. It has been found by X-ray diffraction that the amorphous state of Ta2O5 depends on both the oxidation temperature and the thickness of the films—the combination of high oxidation temperature (>823 K) and thickness smaller than 50 nm is critical for the appearance of a crystal phase. The Ta2O5 layers crystallize to the monoclinic phase and the temperature of the phase transition is between 773 and 823 K for the thinner layers (<50 nm) and very close to 873 K for the thicker ones. The electrical characterization (current/voltage; capacitance/voltage) reveals that the optimal oxidation temperature for achieving the highest dielectric constant (∼32) and the lowest leakage current (10−8 A/cm2 at 1 MV/cm applied field) is 873 K. The results imply that the poor oxidation related defects are rather the dominant factor in the leakage current than the crystallization effects."
}
@article{Mileusnić2002921,
title = "Evaluation of techniques for characterizing virgin and γ-irradiated power VDMOSFETs",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "921 - 928",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00119-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001192",
author = "Saša Mileusnić and Miloš Živanov and Predrag Habaš",
keywords = "Power VDMOSFET",
keywords = "Radiation effects",
keywords = "Characterization method",
keywords = "Measurement technique",
abstract = "There is a continued interest in hardening devices against irradiation which encounter harsh radiation environment. Charge buildup and generation of interface states are the most important degradation factors in VDMOSFETs. They may occur in the course of device fabrication or later during device operation causing reliability problems. Split C–V, charge pumping and subthreshold slope-midgap techniques were applied for understanding the mechanisms that lead to both buildup and annealing of irradiation-induced defects. This is necessary due to the assessment and improvement of the response of devices in an ionizing radiation environment. The results obtained by cited methods are compared to propound their advantages and drawbacks."
}
@article{Patrikar2002929,
title = "Modelling interconnects with surface roughness",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "929 - 934",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00105-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001052",
author = "Rajendra M Patrikar and Chong Yi Dong and Wenjun Zhuang",
keywords = "Interconnect modelling",
keywords = "Parameter extraction",
keywords = "Surface roughness",
keywords = "Design verification",
abstract = "Interconnect modelling is playing crucial role in the integrated circuit design verification since the performance success of design depends on interconnects for today's ICs. For accurate modelling it is more important to take into account all the physical effects with the progresses in technology. One such aspect is roughness on the interconnect surfaces which is arising due to various processes used for fabricating them. In this paper we present model and simulation results for interconnect capacitance, resistance and maximum electric field for interconnects with rough surface."
}
@article{Hosseini2002935,
title = "Characterization of ideal and disordered InAS/GaSb heterostructures for infrared technologies",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "935 - 943",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00101-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001015",
author = "S.A. Hosseini and M.R. Kitchin and M.J. Shaw and M. Jaros",
keywords = "Heterostructures",
keywords = "Superlattice",
keywords = "Dynamical properties",
abstract = "A series of microscopic calculations have been performed for a family of type II InAs/GaSb multiple quantum well (MQW) heterostructures. The resulting stationary state solutions were used to investigate the infrared spectra and scattering cross-sections due to clusters of isovalent anion defects. The absorption coefficient exhibited a polarization dependence which has not previously been observed for heterostructures made from these materials, in that the spectral features and magnitudes matched closely for radiation polarized parallel and perpendicular to the interfacial planes. The magnitude of the scattering cross-section was generally consistent with the defect density and the localization of the carrier wave functions. However, exceptions from this trend were identified in the proximity of the interfaces for electron scattering. Lattice relaxation around defects was observed to reduce scattering for both holes and electrons although the changes in the cross-section due to this phenomenon were not as pronounced as for equivalent superlattice systems. The collective results highlight significant differences between the optical and dynamical properties of MQW and superlattice systems."
}
@article{Lee2002945,
title = "Dual damascene advanced interconnects: new copper seed layer enhancement process metrology using ion chromatography",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "945 - 953",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00100-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001003",
author = "Shih-Wei Lee and Frank G Shi and Sergey D Lopatin",
keywords = "Copper seed layer",
keywords = "Dual damascene",
keywords = "Ion chromatography",
keywords = "Metrology",
abstract = "Physical vapor deposition (PVD) copper seeding and subsequent fill by electroplating have become the most attractive technique for the implementation of copper metallization. However, a PVD seed layer provided as a continuous thin film with low resistivity to carry current for the subsequent electroplating process might have limitations of poor step coverage, rough morphology, discontinuity, overhang, and coverage asymmetry. Hence, it is of importance to extend the capability of PVD seed-layer deposition process for future high performance devices. An ion chromatography (IC) method is shown to be capable for electrochemical copper seed layer enhancement (SLE) process metrology. Composition dynamics of fresh and aged SLE bath solutions with an electroplating time up to 66.5 min are measured and analyzed with an IC system. The solution dynamics are found to be significant for electroplated copper film properties, the resistivity and roughness, which are found to be crucial for filling by electroplating the sub-0.2 μm vias and trenches of high aspect ratio. A strong correlation between the ion chromatograms and the electroplated copper film properties is observed."
}
@article{Jevtić2002955,
title = "An alternative method for transistor low frequency noise estimation by measuring phase noise of test oscillator",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "955 - 960",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00088-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000885",
author = "Milan M Jevtić and Jovan Hadži-Vuković and Rifat Ramović",
keywords = "Noise",
keywords = "Noise measurement",
keywords = "Low frequency noise",
keywords = "Phase noise",
keywords = "Oscillator noise",
keywords = "Noise simulation",
keywords = "Phase noise simulation",
keywords = "Oscillators",
abstract = "In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a simple test oscillator with HEMT, and central frequency of 13.769 GHz. The main contribution to phase noise of the test oscillator comes from up conversion of transistor LF noise. This idea and the method can be used for the selection of transistors for high frequency application or for design of test circuit in RF IC manufacture."
}
@article{Touzi2002961,
title = "Influence of metal properties and photodiode parameters on the spectral response of n-GaN Schottky photodiode",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "961 - 965",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00077-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000770",
author = "C Touzi and A Rebey and B Eljani",
keywords = "Photodiode parameters",
keywords = "Metal properties",
keywords = "Workfunction",
abstract = "The spectral response of n-GaN Schottky photodiode is calculated for various metals including gold (Au), palladium (Pd), nickel (Ni) and platinum (Pt). The choice of the used metal is discussed. Responsivity increases with increase in the metal workfunction. A high light transmittance of the illuminated metal is recommended for not damaging the photoresponse. In order to achieve high performance, we also investigate the variation of spectral response and UV/visible contrast with parameters of the photodiode (doping density, layer thickness, etc.). A moderate doping level (1018 cm−3) and thin layer (0.5 μm) are needed to ameliore the responsivity and the rejection ratio. The application of reverse bias is effective to raise the photoresponse. The adequate choice of these parameters leads to a photodetector with the desired performance."
}
@article{Karmalkar2002967,
title = "Selective electroplating of P-type and N-type areas on semiconductor surfaces",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "967 - 970",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00076-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000769",
author = "S Karmalkar and S Oak and N Venkatasubramanian",
keywords = "Deposition process",
keywords = "Electroplating",
keywords = "Pulse plating",
keywords = "Metallization",
keywords = "Semiconductors",
keywords = "Contacts",
abstract = "We show how N-type or P-type areas of semiconductor surfaces across which the doping polarity varies can be selectively electroplated using DC and periodic reverse (PR) plating voltages. The N-type (P-type) areas of N-type (P-type) substrates having diffused/implanted P-type (N-type) pockets can be selectively plated by a DC plating voltage. On the other hand, the diffused/implanted P-type pockets in N-type substrates can be selectively plated by a PR voltage. We also discuss a practical application of these results to semiconductor devices."
}
@article{Narayanan2002971,
title = "Properties of low-k SiCOH films prepared by plasma-enhanced chemical vapor deposition using trimethylsilane",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "971 - 974",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00075-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000757",
author = "B Narayanan and R Kumar and P.D Foo",
keywords = "Low-k",
keywords = "Plasma-enhanced chemical vapor deposition",
keywords = "Trimethylsilane",
keywords = "SiCOH",
keywords = "RC delay",
abstract = "The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures from 200 to 400 °C. The influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties. The films were annealed at ∼450 °C in an inert ambient after deposition in all the cases. The deposition rate decreases with increase in deposition temperature. The refractive index of the films increases as a function of deposition temperature. From FTIR spectra, OH-related bonds were not detected in films even when deposited at 200 °C. The Si–CH3 bonds were detected in all the films and decreased monotonically from 200 to 400 °C. All deposition conditions studied resulted in films with dielectric constant less than 3, the lowest being ∼2.7 when deposited at 200 °C. All films exhibited good thermal stability."
}
@article{Sharer2002975,
title = "Model generation of the silicon–germanium (Si1−xGex) bipolar inversion channel field effect transistor utilizing a two-dimensional device simulator",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "975 - 984",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00074-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000745",
author = "D. Sharer and F. Tranjan",
keywords = "Microelectronics",
keywords = "Compound semiconductors",
keywords = "Device modeling",
abstract = "The development of an accurate model for an inversion base transistor in the bipolar inversion channel field effect transistor (BICFET) configuration is investigated in this report. Simulations were accomplished through the use of the Medici software, acquired from Avant! Corporation of Sunnyvale, California. This software, which is capable of modeling semiconductor devices comprised of conventional and/or user-defined materials, impurities, structures and operating conditions, was used to develop a model based on experimental device results from Stanford University."
}
@article{Semenov2002985,
title = "Impact of technology scaling on thermal behavior of leakage current in sub-quarter micron MOSFETs: perspective of low temperature current testing",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "985 - 994",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00071-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200071X",
author = "Oleg Semenov and Arman Vassighi and Manoj Sachdev",
keywords = "CMOS technology scaling",
keywords = "ΔIDDQTesting",
keywords = "Leakage current",
keywords = "Low temperature",
abstract = "The increase in the off-state current for sub-quarter micron CMOS technologies is making conventional IDDQ testing ineffective. Since natural process variation together with low-VTH devices can significantly increase the absolute leakage value and the variation, choosing a single threshold for IDDQ testing is impractical. One of the potential solutions is the cooling of the chip during current testing. In this paper we analyze the impact of CMOS technology scaling on the thermal behavior of different leakage current mechanisms in n-MOSFETs and estimate the effectiveness of low temperature IDDQ testing. We found that the conventional single threshold low temperature IDDQ testing is not effective for sub-quarter micron CMOS technologies and propose the low temperature ΔIDDQ test method. The difference between pass and fail current limits was estimated more than 200× for 0.13-μm CMOS technology."
}
@article{Benzarti2002995,
title = "Silicon effect on GaN surface morphology",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "995 - 998",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00066-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000666",
author = "Z Benzarti and I Halidou and O Tottereau and T Boufaden and B El Jani",
keywords = "Metalorganic vapor phase epitaxy",
keywords = "Si-doped GaN",
keywords = "Reflectometry",
keywords = "Morphology",
abstract = "Si-doped GaN epitaxial layers have been grown at 1050 °C on optimized-AlN buffered (0001) sapphire substrates by atmospheric pressure metalorganic vapor phase epitaxy. In order to investigate the Si effect on the surface morphology of GaN epilayers, several samples were grown by varying the silane partial pressure. When the silane partial pressure increases above 1.7×10−8 atm, the surface quality becomes rough. This shows the Si surfactant effect. A correlation between an in situ laser reflectometry and ex situ optical and atomic force microscopy characterizations on the one hand and between electrical properties and surface quality on the other hand were made. As the electron concentration increases, the surface becomes more and more rough and the mobility drops dramatically."
}
@article{Zhou2002999,
title = "Optical properties of PECVD dielectric thin films: thickness and deposition method dependence",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "999 - 1004",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00065-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000654",
author = "H Zhou and H.K Kim and F.G Shi and B Zhao and J Yota",
keywords = "Plasma-enhanced chemical vapor deposition",
keywords = "Thickness dependence",
keywords = "Temperature dependence",
keywords = "Refractive index",
abstract = "Low-k dielectric carbon doped silicon dioxide films 105–1255 nm in thickness, prepared by plasma-enhanced chemical vapor deposition (PECVD) in a six-station sequential deposition system and in a single deposition station, have been investigated for their optical properties using an optical spectrometer coupled with a hot stage. A decrease in refractive index, n, for films with six sub-layers compared with films with a single layer of similar thickness has been observed. This decreased refractive index is thought to be caused by the different effect of crystallinity of the substrate, as a film interface effect is introduced due to the different deposition methods. Both types of PECVD thin films show an increasing refractive index with increasing thickness, which could be attributed to the increased effective density with the increased thickness indicated from Fourier transform infrared spectroscopy microstructure analysis. Cauchy dispersion function is found to be valid for films within all the thickness range and with different deposition methods from visible spectrum to IR spectrum. The refractive index is found to decrease as the temperature increases from 25 to 450 °C at a fixed wavelength for all the films."
}
@article{delaRosa20021005,
title = "Practical study of idle tones in 2nd-order bandpass ΣΔ modulators",
journal = "Microelectronics Journal",
volume = "33",
number = "11",
pages = "1005 - 1009",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00049-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000496",
author = "José M de la Rosa and Belén Pérez-Verdú and Fernando Medeiro and Rocı́o del Rı́o and Angel Rodrı́guez-Vázquez",
keywords = "Analog-to-digital conversion",
keywords = "Bandpass ΣΔ modulation",
keywords = "Idle tones",
abstract = "This paper studies the tonal behaviour of the quantization noise in 2nd-order bandpass ΣΔ modulators. Closed-form expressions for the frequency of the idle tones are derived for different locations of the signal centre frequency. The analytical results are validated through experimental measurements taken from a 0.8 μm CMOS prototype realized using fully differential switched-current circuits."
}
@article{tagkey2002IFC,
title = "IFC-editorial board",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "IFC - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00136-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001362",
key = "tagkey2002IFC"
}
@article{Osseiran2002771,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "771 - 772",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00103-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001039",
author = "Adam Osseiran and Mani Soma"
}
@article{Zhao2002773,
title = "Embedded servo loop for ADC linearity testing",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "773 - 780",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00098-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000988",
author = "Zhurang Zhao and Andre Ivanov",
keywords = "Analog-to-digital converter testing",
keywords = "Analog-to-digital converter BIST",
keywords = "Analog-to-digital converters",
abstract = "A novel embedded servo loop is proposed for testing the differential nonlinearity (DNL) and integral nonlinearity (INL) of analog-to-digital converters (ADCs). An integrator whose integration time is precisely controlled by a delay line is the key part of the servo loop circuitry. The analog part of the servo loop is very simple and does not need calibration while the digital part can be synthesized from a hardware description language. The servo loop does not alter the architecture and operation of the ADC under test and can be used to test any kind of ADC. The servo loop occupies a small area and is suitable for built-in self-test application. The measurement results for DNL and INL are transformed into a digital representation, and the measurement resolution and error are determined by the delay of standard digital gates. Simulation results are reported for an embedded servo loop implemented in 0.35 μm CMOS technology."
}
@article{Azaı̈s2002781,
title = "Analog built-in saw-tooth generator for ADC histogram test",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "781 - 789",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00090-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000903",
author = "F Azaı̈s and S Bernard and Y Bertrand and M Renovell",
keywords = "Saw-tooth generator",
keywords = "CMOS technologies",
keywords = "Mixed-signal",
abstract = "This paper presents an analog built-in saw-tooth generator to be used for linear histogram test of ADCs. The internal generation of a highly linear signal with precise amplitude control relies on the use of an original calibration scheme. The effectiveness of the calibration procedure is evaluated through simulations and results demonstrate that ramp signals with a linearity of 15 bits and an average slope error of 0.4% can be achieved. In addition, the proposed implementation exhibits a very low silicon area, making the generator suitable for BIST application."
}
@article{Joseph2002791,
title = "Application of DfT techniques to a 20 GHz superconductor delta ADC",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "791 - 798",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00091-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000915",
author = "Arun A Joseph and Marcel H.H Weusthof and Hans G Kerkhoff",
keywords = "Analog-to-digital converter testing",
keywords = "Software-defined radio",
keywords = "Software radio",
keywords = "Superconductor devices",
keywords = "Rapid single flux quantum circuit testing",
keywords = "Built-in-self-test",
keywords = "Josephson junction",
abstract = "Advances in the mobile communication industry require very high-speed ADCs for their implementation. In the near future, state-of-the-art semiconductor ADCs cannot fulfill the requirements in frequency and resolution. Superconductor technology is promising for the implementation of this application. The testing of these converters is difficult, as usually extremely high performance instruments are required. In addition, the interfacing between device and signal generation/test equipment is very critical. Following the current trend of test-resource partitioning, our basic approach has been to reduce or omit the interfacing at high speeds and effectively down-rating the required test equipment. We have adapted existing DfT techniques to the superconductor technology. In its ultimate form it could result in built-in-self-test."
}
@article{Huertas2002799,
title = "Oscillation-based test in oversampled ΣΔ modulators",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "799 - 806",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00095-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000952",
author = "Gloria Huertas and Diego Vázquez and Eduardo Peralı́as and Adoración Rueda and José L Huertas",
keywords = "Mixed-signal design",
keywords = "Design for test",
keywords = "Oscillation-based test",
keywords = "Test of ΣΔ modulators",
abstract = "This paper discusses a way of applying the oscillation-based test (OBT)/oscillation-based built-in-self test concept to oversampled ΣΔ modulators, exploiting previous experience coined through the implementation of OBT in SC integrated filters. Analytical and simulation results demonstrate that it is always feasible to find out an OBT configuration for a typical discrete-time second-order modulator structure without adding a substantial extra circuitry, but only resorting to local feedback loops. A feedback strategy can be chosen providing enough freedom to force oscillations, which can be worthwhile for testing purposes. The selected oscillation parameters allow us to establish criteria for a high fault coverage."
}
@article{Ong2002807,
title = "Testing second-order delta–sigma modulators using pseudo-random patterns",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "807 - 814",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00096-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000964",
author = "C.K Ong and J.L Huang and K.T Cheng",
keywords = "Delta–sigma modulation",
keywords = "Analog-to-digital converter testing",
keywords = "Pseudo-random sequence",
keywords = "Structural testing",
abstract = "Single-bit second-order delta–sigma modulators are commonly used in high-resolution analog-to-digital converters (ADCs). This type of modulator requires high-resolution test stimulus, which is difficult to generate. This paper proposes a novel and robust technique to determine the performance of the modulator by characterizing its key parameters using a pseudo-random pattern sequence. This technique is suitable for BIST application since a pseudo-random sequence can be generated on-chip using LFSR. Numerical simulation results show that this technique is capable of identifying parameters that affect the performance of a second-order delta–sigma modulator ADC."
}
@article{Straube2002815,
title = "Multi-level hierarchical analogue fault simulation",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "815 - 821",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00099-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200099X",
author = "Bernd Straube and Wolfgang Vermeiren and Volker Spenke",
keywords = "Analogue fault simulation",
keywords = "Behavioural fault simulation",
keywords = "Hierarchical fault simulation",
keywords = "Multi-level fault simulation",
keywords = "Speed-up techniques",
keywords = "Analogue test",
keywords = "Mixed-signal test",
abstract = "In this paper the extensions of our analogue fault simulator ‘aFSIM’ to a multi-level hierarchical analogue fault simulation tool are described. Due to these extensions it is now possible to fault-simulate larger analogue circuits. In addition mixed-signal circuits including a not too large amount of digital circuitry can also be fault-simulated. The term ‘multi-level hierarchical analogue fault simulation’ comprises the usage of behavioural models for components together with components described at the transistor-level, fault injection at different abstraction levels, and a hierarchically handling of both different descriptions of the circuit components and faults during the fault simulation process. Multi-level hierarchical analogue fault simulation is an important means to tackle the complexity of analogue circuits for providing test signals with a high fault and defect coverage."
}
@article{Calvano2002823,
title = "Synthesis method for testable electrical networks using 1st order building blocks",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "823 - 834",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00093-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000939",
author = "José Vicente Calvano and Antônio Carneiro de Mesquita Filho and Vladimir Castro Alves and Marcelo Soares Lubaszewski",
keywords = "Analog test",
keywords = "Analog fault model",
keywords = "Design for test",
abstract = "This work presents a method for synthesizing testable continuous-time linear time-invariant electrical networks using 1st order blocks for the implementation of analog linear circuits. A functional–structural fault model for the block, and a fault dictionary are proposed together with a simple set of test vectors. The method allows, also, the fault grade evaluation for the modeled faults. The results obtained from the two application examples have shown the suitability of the approach as a design for test method for analog circuits."
}
@article{Choi2002835,
title = "Dynamic noise model and its application to high speed circuit design",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "835 - 846",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00094-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000940",
author = "Seung Hoon Choi and Dinesh Somasekhar and Kaushik Roy",
keywords = "Noise analysis",
keywords = "Modeling",
keywords = "Crosstalk",
keywords = "Capacitance",
keywords = "Simulation",
abstract = "A dynamic noise model is developed and applied to analyze the noise immunities of precharge-evaluate circuits. With cross-talk being the main source of noise injection in the circuit, a simple metric represented as voltage–time product can be used to quantify the dynamic noise-margin. This is verified through HSPICE simulation on DOMINO gates. Based on this dynamic noise model, a tool is developed and applied to find the static and dynamic noise-margins at various points in the circuit with the effects of charge share and power/ground bounce taken into account. Obtained noise-margins are translated into maximum allowable coupling capacitances between the nodes for different types of precharge-evaluate logic circuits. The results show the difference in dynamic noise immunities in different logic families. Accurate estimates of dynamic noise-margins and coupling capacitance bounds will help design robust CMOS circuits."
}
@article{Nácul2002847,
title = "Testing of RF mixers with adaptive filters",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "847 - 853",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00089-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000897",
author = "André Nácul and Luigi Carro and Daniel Janner and Marcelo Lubaszewski",
keywords = "Non-linear testing",
keywords = "Analog testing",
keywords = "RF mixers",
keywords = "Adaptive filters",
abstract = "This work describes a technique for testing RF mixers with digital adaptive filters. RF circuits are widely used on data transmission applications, such as wireless communication, radio and portable phone systems. However, traditional analog testing covers mainly linear circuits, being not suitable to non-linear pieces of hardware like analog mixers. Herein, an adaptive non-linear filter is trained so that it can mimic the behavior of a RF mixer. Then, a test stimulus is simultaneously applied to the filter and the mixer and the outputs of both circuits are compared to check whether the circuit under test is faulty or fault free. A prototype of a mixer was built in order to allow fault injection in the circuit under test. Thus, the detection capability of the proposed technique could be checked in a real life circuit. The preliminary results point to a very promising test technique. The test is very precise, low cost and allows a complete fault coverage with a very small testing time."
}
@article{Krampl2002855,
title = "A high-performance VHDL-based virtual tester: a concept and a solution",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "855 - 859",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00092-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000927",
author = "Gunter Krampl and Marco Rona",
keywords = "Mixed-signal testing",
keywords = "Virtual test",
keywords = "Pre-silicon test program debug",
keywords = "Behavioural analogue modelling",
keywords = "VHDL",
abstract = "Virtual test (VT) is a powerful technique to cut the time-to-market especially for SoC products. VT allows debugging mixed-signal test programs in a simulation environment if a fast and sufficiently accurate chip model can be made available several weeks before first silicon. VHDL behavioural models were found to cover both the needs of designers for sign-off simulation on chip level and of test engineers for VT. This paper presents a high-performance VT solution based on pure VHDL modelling of the hardware involved, a VHDL-based virtual tester concept and a snapshot test data extractor linking the test program to a simulator."
}
@article{Rosing2002861,
title = "Generation of component level fault models for MEMS",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "861 - 868",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00097-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000976",
author = "R. Rosing and R. Reichenbach and A. Richardson",
keywords = "Microsystems",
keywords = "MEMS",
keywords = "Fault modelling",
keywords = "Failure mode and effect analysis",
abstract = "Component level (nodal) simulations have been proposed to both implement closed loop simulation of complete microsystems to support the migration to shorter design cycles and implement fault models of micromechanical components. Within such a simulation environment, library cells in the form of behavioural models are used for the basic components of microelectromechanical (MEM) transducers, such as beams, plates, comb-drives and membranes. This paper presents both methodologies to generate the model parameters required for the implementation of accurate component fault models and simulation results from representative defective structures in a MEMS product."
}
@article{tagkey2002869,
title = "Patents alert",
journal = "Microelectronics Journal",
volume = "33",
number = "10",
pages = "869 - 872",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00122-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202001222",
key = "tagkey2002869"
}
@article{V2002687,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "687 - 688",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00050-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000502",
author = "V and Székely"
}
@article{Altet2002689,
title = "Four different approaches for the measurement of IC surface temperature: application to thermal testing",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "689 - 696",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00051-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000514",
author = "Josep Altet and Stefan Dilhaire and Sebastian Volz and Jean-Michel Rampnoux and Antonio Rubio and Stephane Grauby and Luis David Patino Lopez and Wilfrid Claeys and Jean-Bernard Saulnier",
keywords = "Thermal testing",
keywords = "Scanning thermal microscopy",
keywords = "Laser reflectometry",
keywords = "Laser interferometry",
keywords = "Built-in temperature sensors",
keywords = "Thermal couplings",
keywords = "Integrated circuits",
abstract = "Silicon die surface temperature can be used to monitor the health state of digital and analogue integrated circuits (IC). In the present paper, four different sensing techniques: scanning thermal microscope, laser reflectometer, laser interferometer and electronic built-in differential temperature sensors are used to measure the temperature at the surface of the same IC containing heat sources (hot spots) that behave as faulty digital gates. The goal of the paper is to describe the techniques as well as to present the performances of these sensing methods for the detection and localisation of hot spots in an IC."
}
@article{Burzo2002697,
title = "Influence of the metallic absorption layer on the quality of thermal conductivity measurements by the transient thermo-reflectance method",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "697 - 703",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00052-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000526",
author = "Mihai G. Burzo and Pavel L. Komarov and Peter E. Raad",
keywords = "Transient thermo-reflectance method",
keywords = "Metallic absorption layer",
keywords = "Thermal conductivity of thin-films",
keywords = "Thermally thick and thermally thin layers",
keywords = "Responsivity of thermal conductivity measurements",
abstract = "This work investigates numerically the influence of a metallic absorption layer on the laser-based measurements of the thermal conductivity of dielectric (SiO2) and semiconductor (Si) electronic materials. The validity of the approach and the obtained results are assessed by comparison with experimental measurements obtained for gold-covered silicon dioxide samples. The results reveal the presence of behaviors associated with thermally thin and thermally thick absorption layers, depending on the ratio between the thickness of the absorption layer and the heat penetration depth. Optimal performance of the transient thermo-reflectance method was found to exist for thicknesses of metal layers falling between the identified thermally thin and thermally thick layers."
}
@article{Semmar2002705,
title = "Thermal behaviour of electric connector coating irradiated by a laser beam",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "705 - 710",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00053-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000538",
author = "Nadjib Semmar and Cécile Georges and Chantal Boulmer-Leborgne",
keywords = "Corrosion",
keywords = "Electric connector",
keywords = "Laser treatment",
keywords = "One dimension thermal modelling",
keywords = "Melting depth",
abstract = "In this work, one dimension unsteady heat problem is resolved to simulate laser treatment of an electric connector coating. The electrochemical gold coating processing is not sufficient to limit the corrosion inside the connector. Thus an excimer laser beam interacts with the surface to recover a regular smooth surface by melting. The laser fluence must be adjusted to ensure the partial melting of the gold coating without its evaporation. The modelling of heat diffusion allows calculating the optimal fluence range (laser energy). Typically, for 0.75 μm surface coating on a multilayer metallic substrate, the laser fluence is ranging from 390 to 550 mJ/cm2. The temperature profile is also plotted to describe the coating thermal field. Finally, the effect of the heat density (laser intensity) time distribution in the temperature profile and the melting depth is discussed."
}
@article{Gerstenmaier2002711,
title = "Rigorous model and network for static thermal problems",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "711 - 718",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00054-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200054X",
author = "Y.C Gerstenmaier and H Pape and G Wachutka",
keywords = "Thermal modelling",
keywords = "Steady-state compact thermal model",
keywords = "Thermal equivalent networks",
abstract = "A compact thermal steady-state model is presented for the hot spot (junction) temperatures and contact heat flows of electronic systems with multiple thermal ports. A minimal set of independent parameters is established that allows exact model description provided that the heat conduction equation is linear and the thermal contact areas have uniform temperature distribution. Contrary to state of the art thermal resistor networks, the model parameters can be determined simply by linear fits to measured or simulated data. The use of complex non-linear fit routines is avoided. The new model can be identified with a resistor network where the power (current) input is not applied to the junction node. A general method results to determine the resistor values of a network with prescribed topology by linear fits to data."
}
@article{Gerstenmaier2002719,
title = "Rigorous model and network for transient thermal problems",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "719 - 725",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00055-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000551",
author = "Y.C Gerstenmaier and G Wachutka",
keywords = "Thermal modeling",
keywords = "Transient compact thermal model",
keywords = "Thermal equivalent networks",
abstract = "A compact thermal model is presented for the transient hot spot (junction) temperatures and contact heat flow development of electronic systems with multiple thermal ports. The purpose of this paper is (1) to extend the previously developed steady state model to different representations thus providing the relations between the model descriptions of different working groups, and (2) to establish a general time dependent compact model and network, making use of the superposition principle. The transient model is constructed by using thermal impedances in the time and frequency domain. A corresponding network with thermal resistors and capacitors is established. The model is exact provided that the heat conduction equation is linear and the temperature distribution along the thermal contact areas is uniform."
}
@article{Maj2002727,
title = "Heat propagation in H-bridge smart power chips under switching conditions",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "727 - 731",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00056-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000563",
author = "Bartosz Maj and Adam Augustin and Arno Kostka",
keywords = "DMOS-arrays",
keywords = "H-bridge",
keywords = "Temperature distribution",
keywords = "Eigenfunctions",
abstract = "A method for a time-dependent solution of the heat conduction equation for semiconductor power devices will be presented. The mathematical approach to the solution is taken with the help of the eigenfunctions and eigenvalues theory, a suitable approach for these types of problems. Examples for the application of this solution for smart power devices under switching conditions will be presented."
}
@article{Janicki2002733,
title = "Application of Green's functions for analysis of transient thermal states in electronic circuits",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "733 - 738",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00057-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000575",
author = "Marcin Janicki and Gilbert De Mey and Andrzej Napieralski",
keywords = "Transient thermal simulation",
keywords = "Electronic circuit",
keywords = "Infrared measurement",
abstract = "This paper presents an approach to the modelling of transient thermal states in electronic circuits using an analytical solution of the heat equation. Fully three-dimensional analytical time dependent solutions are determined with the help of Green's functions. The solution method is illustrated in detail on a practical example, where the results of transient thermal simulations of a real hybrid circuit are compared with infrared measurements."
}
@article{Koziel2002739,
title = "Hybrid evolutionary partitioning algorithm for heat transfer enhancement in VLSI circuits",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "739 - 746",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00058-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000587",
author = "Slawomir Koziel and Wladyslaw Szczesniak",
keywords = "Thermal performance of interconnections",
keywords = "Heat dissipation",
keywords = "Heat transfer enhancement",
keywords = "Layout of VLSI circuit",
keywords = "VLSI circuit partitioning",
keywords = "Hybrid evolutionary VLSI partitioning",
abstract = "In this paper, a new approach to improving the heat transfer in integrated circuits (ICs) is presented. It is based on improving the thermal conductivity of ICs by increasing the number of their external connections up to the level determined by the packaging standard. In order to attain this goal, a new hybrid evolutionary partitioning algorithm (HEPA) for circuits partitioning is introduced. The computations carried out for the chosen benchmarks show that HEPA is able to reach optimal solutions in the case of bipartitioning problem, and almost optimal in the case of k-way partitioning (k>2). The presented approach is especially dedicated for a flip chip interconnect technology which is used in contemporary ICs."
}
@article{Zhu2002749,
title = "Interconnection optimization in data path allocation using minimal cost maximal flow algorithm",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "749 - 759",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00048-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000484",
author = "H.W. Zhu and C.C. Jong",
keywords = "High-level synthesis",
keywords = "Data path allocation",
keywords = "Layout area estimation",
keywords = "Interconnection optimization",
keywords = "Flow network",
abstract = "In most designs of digital systems, as the area taken up by multiplexers and wires outweighs that of functional modules and registers, the interconnection optimization in high-level synthesis becomes very significant. In this paper, a layout area estimation model based on bit-sliced standard cell design style is presented. With the model, a data path allocation system was developed to optimize the interconnection. Both the module allocation problem and the register allocation problem are modeled as the minimal cost maximal flow problem in a network. Experimental results show that the layout area estimation model is suitable to guide the design decisions during the allocation and good designs with optimal interconnections can be produced by the system."
}
@article{Magafas2002761,
title = "Optical response of the Al/a-SiC/c-Si(p)/Au heterojunction structure",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "761 - 764",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00045-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000459",
author = "L. Magafas and N. Georgoulas and A. Thanailakis",
keywords = "Optical response",
keywords = "Heterojunctions",
keywords = "Al/a-SiC/c-Si(p)/Au",
abstract = "In the present work, structures of the form Al/a-SiC/c-Si(p)/Au were fabricated and their optical response was studied in the wavelength region from 350 up to 1000 nm for different thicknesses of the amorphous material, from 600 up to 10,000 Å, as well as the diffusion length of the a-SiC was determined. The spectral response of the Al/a-SiC/c-Si(p)/Au structures for thicknesses, d, of a-SiC>1000 Å exhibits a maximum value at 800 nm, whereas in the region of wavelengths from 400 up to 600 nm appears a loss mechanism, which may be attributed to the recombination of photogenerated hole–electron pairs in the neutral region of a-SiC. This loss mechanism disappears when the thickness of the neutral region of the amorphous thin film is smaller than the diffusion length of a-SiC. In this case (i.e. for d<1000 Å), the spectral response of the Al/a-SiC/c-Si(p)/Au structures exhibits an almost constant value of quantum efficiency over the range of wavelengths from 550 up to 850 nm. This, combined with the relatively high variable values of quantum efficiency over the range of wavelengths from 350 up to 550 nm, makes these structures interesting as optical sensor devices. Finally, the minority carrier (holes) diffusion length of a-SiC was determined, using an optical method applicable to one-sided crystalline Si homojunctions, and it was found to be equal to 800 Å."
}
@article{Vellvehi2002765,
title = "Design and optimisation of suitable edge terminations for 6.5 kV IGBTs",
journal = "Microelectronics Journal",
volume = "33",
number = "9",
pages = "765 - 769",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00040-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200040X",
author = "M Vellvehi and D Flores and X Jordà and S Hidalgo and J Rebollo and L Coulbeck and P Waind and D Newcombe",
keywords = "High voltage IGBT",
keywords = "Junction termination extension",
keywords = "Floating guard rings",
abstract = "This paper is addressed to the design and optimisation of junction termination extension and floating guard rings edge termination structures to integrate 6.5 kV IGBT devices. The developed edge termination structures are extensively analysed through numerical simulations, and experimental data on fabricated diode structures are correlated with simulation results."
}
@article{Lee2002605,
title = "Thickness dependent soft-breakdown phenomena of low dielectric constant thin films and corresponding activation energy",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "605 - 608",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00036-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000368",
author = "Shih-Wei Lee and Hyungkun Kim and Frank G Shi and Bin Zhao",
keywords = "Thickness dependent",
keywords = "Soft-breakdown",
keywords = "Low dielectric constant",
keywords = "Activation energy",
abstract = "Thickness dependent dielectric soft-breakdown and corresponding activation energy in low dielectric constant (low-k) thin films with thickness ranging from 48 to 1141 nm are investigated to evaluate the reliability of polymer integration on device wafers for the first time. It is found that the strength against soft-breakdown decreases and the leakage current increases with the decrease in low-k film thickness. In the regions both before and after soft-breakdown, the conduction activation energy increases with the increase in low-k film thickness. The conduction activation energy before soft-breakdown is smaller than that after soft-breakdown."
}
@article{Santos2002609,
title = "High-voltage solutions in CMOS technology",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "609 - 617",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00041-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000411",
author = "P.M Santos and A.P Casimiro and M Lança and M.I Castro Simas",
keywords = "High-voltage",
keywords = "Power integrated circuits",
keywords = "CMOS compatible",
abstract = "This paper presents trends on CMOS high-voltage techniques for power integrated circuits (PICs). Several fully CMOS compatible drain engineering techniques will be presented. Experimental devices were fabricated in standard CMOS processes from three different lithography generations (2, 0.7 and 0.5 μm) without resorting to any extra processing steps. MOS devices layout specificity towards performance improvement, namely breakdown, parasitic effects and degradation, will be emphasized.
A recently developed technique used to enlarge high-voltage devices safe-operating area and reduce leakage current will also be presented due to the very promising experimental results.
Comparison with more sophisticated and expensive technologies still reveals CMOS as a highly accessible and versatile technology for future PICs."
}
@article{Giani2002619,
title = "Thermal model of thin film anemometer",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "619 - 625",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00039-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000393",
author = "A. Giani and F. Mailly and R. Bonnot and F. Pascal-Delannoy and A. Foucaran and A. Boyer",
keywords = "Thermal sensor",
keywords = "Flow measurements",
keywords = "Convection",
keywords = "Platinum heater",
abstract = "This work presents a thermal model for thin film anemometers and shows the importance of the characteristic length of the heater in convection phenomena. The techniques of silicon micro-machining were used to manufacture an anemometer with low electric consumption and great sensitivity. A thermal model of the sensor is described and then confronted with experimental results. The calculation of thermal conductance due to convection, radiation and conduction is presented. The coefficient of convection was deducted and it was found very high in comparison with the one of a macroscopic structure: 200 W m−2 K−1 typically for free convection. The response of the sensor in the airflow is also presented as a function of the coefficient of convection or a function of the flow velocity and it shows that the coefficient of convection does not follow the macroscopic laws. Then, a new sensor with a larger characteristic length was manufactured and its response and coefficient of convection are compared to the smaller sensor ones."
}
@article{Todd2002627,
title = "Validation of a novel dielectric constant simulation model and the determination of its physical parameters",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "627 - 632",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00038-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000381",
author = "Michael G Todd and Frank G Shi",
keywords = "Dielectric constant",
keywords = "Composite",
keywords = "Effective medium theory",
keywords = "Rule of mixtures",
abstract = "Precise determination of the dielectric constant of microelectronic packaging materials is critical for the performance optimization of high frequency devices. Accurate empirical data, however, is difficult to obtain and often not available for these complex composite materials. In order to provide a basis for predictive model verification, dielectric analysis of a series of model microelectronic packaging materials was conducted. Physical characteristics of the composite constituents, including the morphology of the dispersed phase as well as the dielectric constant of the dispersed and host phases, were used to define the indeterminate variables. The results of these analyses provide a systematic verification of a newly developed physical model for predicting the effective dielectric constant of complex composite systems. The model considers an interphase zone surrounding each dispersed particle having unique physical and electrical characteristics. A physical interpretation is presented to explain the indeterminate variables incorporated in this model."
}
@article{Jogi2002633,
title = "An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "633 - 638",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00033-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000332",
author = "Jyotika Jogi and Sujata Sen and Mridula Gupta and R.S. Gupta",
keywords = "LMHEMT",
keywords = "Drain induced barrier lowering",
keywords = "Channel potential",
keywords = "Field distribution",
keywords = "Threshold voltage",
abstract = "This paper presents an analytical 2D model for InAlAs/InGaAs/InAlAs/InP LMHEMT that explains the drain induced barrier lowering (DIBL) and its effect on the device performance. The increasing drain voltage lowers the potential barrier between source and drain in or near the subthreshold region. As the barrier is lowered to be comparable to the thermal energy the device begins to conduct again. This effect causes the threshold voltage control problem and degrades the device performance. The model is used to obtain the potential distribution and the electric field in the depletion region and the threshold voltage is also calculated from the minimum channel potential. It is proposed as a consequence of the analysis that the device degradation due to DIBL effect is a very short channel problem."
}
@article{Huang2002639,
title = "Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "639 - 643",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00034-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000344",
author = "J Huang and T.P Chen and M.S Tse and C.H Ang",
keywords = "MOSFET",
keywords = "Gate-controlled-diode characteristics",
keywords = "Fowler–Nordheim injection",
keywords = "Interface degradation",
abstract = "The gate-controlled-diode (GCD) characteristic of a deep submicron MOSFET is changed dramatically following a Fowler–Nordheim (FN) injection. The changes can be explained by the trap generation on the Si surface close to the channel/drain edge and the interface trap generation in the channel region. By examining the change in the reverse drain current under accumulation and inversion in the GCD measurements, the information of trap generation in the surface region close to the channel/drain edge is obtained (note that the trap generation in this region could be different from that in other interface regions); and by measuring the reverse drain current under depletion, the interface trap generation in the channel region is obtained."
}
@article{Lee2002645,
title = "Effect of different etching processes on edge breakdown suppression for planar InP/InGaAs avalanche photodiodes",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "645 - 649",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00032-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000320",
author = "Bongyong Lee and Ilgu Yun",
keywords = "Avalanche photodiode",
keywords = "Guard ring",
keywords = "Edge breakdown",
keywords = "Optical receiver",
abstract = "With the progress of semiconductor processing technology, avalanche photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, planar-type APDs struggle with a problem of intense electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focus our study on the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to form p–n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it is understood that the optimum structure, which can minimize edge breakdown and improve the manufacturability, can be predicted."
}
@article{Golan2002651,
title = "Novel method of low-vacuum plasma triode sputtering",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "651 - 657",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00030-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000307",
author = "G Golan and A Axelevitch",
keywords = "Thin film",
keywords = "Tetrode sputtering",
keywords = "Silicon",
keywords = "Titanium",
abstract = "A novel sputtering method based on a triode-sputtering set-up is presented. This low-vacuum plasma method enables sputtering of thin films at a pressure range 0.2–5 mTorr, using a supported gas discharge. The new method is capable of an independent control of the sputtering rate vs. sputtering voltage. Temperature distribution of electrons in the plasma was experimentally studied, using the Langmuir probe. Experimental sputtering results of Ti and Si layers, using this method, are described."
}
@article{Ullán2002659,
title = "Optimization of a 0.6 μm, single polysilicon emitter bipolar technology versus narrow emitter effects",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "659 - 665",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00031-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000319",
author = "M Ullán and M Lozano and J Santander and E Lora-Tamayo and S Nigrin",
keywords = "Bipolar transistors",
keywords = "UHF bipolar transistors",
keywords = "Semiconductor device fabrication",
keywords = "Semiconductor device measurements",
keywords = "Optimization methods",
keywords = "Ultra-large-scale integration",
abstract = "A novel 0.6 μm, single polysilicon emitter bipolar technology has been optimized in order to reduce the consequences of narrow emitter effects (NEE) appearing at the laterals of the emitter area. The primary technological mechanisms of these effects have been studied and differentiated for this technology. They have been found to be the polysilicon over-etch into the underlying silicon, the pedestal oxidation, both of them in the area of the extrinsic base implantation, and the extrinsic base lateral diffusion. Designs of experiments techniques have been used in order to study all these technological elements and their effect on the final performance of the transistors. Common emitter current gain variation versus emitter width has been studied by means of test structures and an optimization method is proposed. Lateral diffusion of extrinsic base has been identified as main source of NEE in this technology, which reduces the transistors current gain. Pedestal oxidation has been identified as secondary source of these effects, acting in an opposite way of lateral diffusion increasing the transistors current gain. This opposed effects have been tuned in the technological optimization to minimize the NEE by means of a mutual compensation."
}
@article{He2002667,
title = "RETRACTED: Normalized mutual integral difference operator: a novel experimental method for extracting threshold voltage of MOSFETs",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "667 - 670",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00028-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000289",
author = "Jin He and Xing Zhang and Yangyuan Wang and Xuemei Xi and Mansun Chan and Chenming Hu",
abstract = "This article has been retracted at the request of the Editor-in-Chief and Author. Please see Elsevier Policy on Article Withdrawal (http://www.elsevier.com/locate/withdrawalpolicy).
This article is a duplicate of a paper that has already been published in IEEE Electr. Device Lett., 23 (2002) 428–430, doi:10.1109/LED.2002.1015230
One of the conditions of submission of a paper for publication is that authors declare explicitly that the paper is not under consideration for publication elsewhere. As such this article represents a severe abuse of the scientific publishing system.
The scientific community takes a very strong view on this matter and we apologize to readers of the journal that this was not detected during the submission process."
}
@article{Wang2002671,
title = "Weak light effect in multicrystalline silicon solar cells",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "671 - 674",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00037-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200037X",
author = "He Wang and Hong Yang and Huacong Yu and Jianping Xi and Hongxun Hu and Guangde Chen",
keywords = "Weak light effect",
keywords = "Solar cells",
keywords = "Open circuit voltage",
keywords = "Multicrystalline silicon",
abstract = "Minority carrier trapping centers frequently exist in solar grade multicrystalline silicon, such trapping centers cause a drastic increase in photoconductance at carrier injection levels equal to and below the trap density, this phenomenon leads to higher open circuit voltage for multicrystalline silicon solar cells at illumination levels below about 0.2 suns compared to high performance crystalline silicon solar cells. In this paper, the open circuit voltage of multicrystalline silicon solar cells are investigated at low illumination levels, the experiments prove that some multicrystalline silicon solar cells which have higher trap density have higher open circuit voltage at weak illumination levels, and have lower efficiency, so a new method is presented to analyze quality of multicrystalline silicon by measuring open circuit voltage at weak illumination levels in-line, this makes cells manufacturers gain insight into the quality of multicrystalline silicon wafer from different multicrystalline silicon manufacturers easily with the same cell process before screenprinting and firing."
}
@article{Ko2002675,
title = "Neural network based modeling of diffusion process for high-speed avalanche photodiodes fabrication",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "675 - 680",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00026-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000265",
author = "Young-Don Ko and Yong Hwan Kwon and Kyung Sook Hyun and Changhyun Yi and Ilgu Yun",
keywords = "Modeling",
keywords = "Diffusion process",
keywords = "Neural networks",
keywords = "Avalanche photodiode",
abstract = "This paper presents the modeling methodology of Zn diffusion process utilized for high-speed avalanche photodiode fabrication using neural networks. The modeling scheme can characterize the effects of diffusion process conditions on the performance metrics of diffusion process. Three different InP-based test structures with different doping concentrations in diffused layer are explored. Three input factors (sealing pressure, amount of Zn3P2 source per volume, and doping concentration of diffused layer) are examined with respect to the two performance metrics (diffusion-rate and Zn doping concentration) by means of D-optimal design experiment. Diffusion rate and Zn doping concentration in diffused layer are characterized by a response model generated by training feed-forward error back-propagation neural networks. It is observed that the neural network based process models developed here exhibit good agreement with experimental results."
}
@article{M2002681,
title = "Principles of Electronic Materials and Devices (Second Edition): S.O. Kasap: McGraw-Hill, 2002. 745 pp, ISBN 0-07-112237-0",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "681 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00042-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000423",
author = "M and Henini"
}
@article{tagkey2002683,
title = "Patents alert 33/7",
journal = "Microelectronics Journal",
volume = "33",
number = "8",
pages = "683 - 686",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00035-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000356",
key = "tagkey2002683"
}
@article{Mohamed2002523,
title = "Preface",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "523 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00012-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000125",
author = "Mohamed and Henini"
}
@article{Beyer2002525,
title = "Germanium islands embedded in strained silicon quantum wells grown on patterned substrates",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "525 - 529",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00013-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000137",
author = "A Beyer and E Müller and H Sigg and S Stutz and C David and K Ensslin and D Grützmacher",
keywords = "Germanium islands",
keywords = "Patterned substrates",
keywords = "Relaxed SiGe buffer",
keywords = "Photoluminescence",
abstract = "Germanium islands were embedded in strained silicon quantum wells in order to provide an improved electron confinement in vicinity of the islands. Growth was performed on relaxed SiGe layers. Patterned substrates were used, favouring lattice relaxation as well permitting the fabrication of small Ge islands at deposition temperatures above 500 °C. Photoluminescence analysis reveals a strongly reduced dislocation related signal. The low temperature spectra are dominated by intense signals from the germanium islands. The origin of these signals were investigated by removing the islands by etching, analysing reference samples without a silicon quantum well, varying the germanium deposition and the growth temperature."
}
@article{Cho2002531,
title = "Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "531 - 534",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00014-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000149",
author = "S. Cho and A. Majerfeld and J.J. Sánchez and E. Muñoz and J.M.G. Tijero and J.I. Izpura",
keywords = "Piezoelectric field",
keywords = "Pyroelectric effect",
keywords = "Franz–Keldysh oscillations",
abstract = "We investigated the temperature dependence of the piezoelectric constant e14, i.e. the pyroelectric effect, of various strained InGaAs/GaAs single- and multi-quantum wells embedded in p–i–n structures grown on (111)B GaAs substrates and diodes made from these structures. Both photoreflectance spectroscopy and differential photocurrent spectroscopy were applied to obtain e14 over the temperature range 11–300 K. The values of e14 for InxGa1−xAs quantum well layers with x=0.12–0.21 were observed to increase with temperature, which is contrary to the expected dependence, and the strain-induced components of the pyroelectric coefficients were quantitatively determined. The dependence of the pyroelectric coefficient on In fraction is discussed."
}
@article{Efremov2002535,
title = "Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "535 - 540",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00015-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000150",
author = "M.D. Efremov and V.A. Volodin and V.A. Sachkov and V.V. Preobrazhenski and B.R. Semyagin and N.N. Ledentsov and V.M. Ustinov and I.P. Soshnikov and D. Litvinov and A. Rosenauer and D. Gerthsen",
keywords = "Corrugated superlattices",
keywords = "Raman scattering",
keywords = "High-resolution transmission electron microscopy",
abstract = "Raman spectroscopy powered by theoretical modeling of vibrational modes was shown to be an effective tool to examine interface structure of superlattices (SLs). In this work we studied GaAsn/AlAsm (n=1–10 monolayers) corrugated superlattices (CSLs) grown on (311)A GaAs substrates using Raman spectroscopy and high-resolution transmission electron microscopy. The strongest modification of the calculated Raman spectra is found for the finite length of the GaAs-domain in the CSL in the case of partial (<1 nm) GaAs filling of the AlAs surface. This theoretical result is in a very good agreement with the sharp transformation of the experimental Raman spectra observed for this thickness range. Thus, calculated and experimental Raman spectra demonstrated a good agreement for both complete (≥1 nm) and partial (<1 nm) GaAs filling of the AlAs surface."
}
@article{Ferrandis2002541,
title = "Optical characterisation of Ge islands grown on Si(110)",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "541 - 546",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00016-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000162",
author = "P Ferrandis and L Vescan and B Holländer",
keywords = "Si(110)",
keywords = "Ge",
keywords = "Islands",
keywords = "Low pressure chemical vapour deposition",
keywords = "Atomic force microscopy",
keywords = "Photoluminescence",
abstract = "The growth of Ge islands on Si(110) substrates by low pressure chemical vapour deposition has been studied. Atomic force microscopy images reveal that multifaceted dome shaped islands appear on samples where the two-dimensional (2D) to three-dimensional (3D) growth mode changeover has occurred. Photoluminescence (PL) spectroscopy was used to investigate the growth as a function of the Ge coverage. The excitation power dependence of island PL spectra allowed one to point out a band filling effect and to determine the efficiency of radiative recombinations. In addition, island PL peak evolution with temperature underlined a good hole confinement."
}
@article{Fleischmann2002547,
title = "Characterisation of strained (111)B InGaAs/GaAs quantum well lasers with intracavity optical modulator",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "547 - 552",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00017-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000174",
author = "T Fleischmann and J.M Ulloa and M Moran and G.J Rees and J Woodhead and M Hopkinson",
keywords = "Semiconductor lasers",
keywords = "Optical modulator",
keywords = "Diode",
abstract = "We have studied InGaAs/GaAs quantum well (QW) lasers with an intracavity saturable absorber grown on (111)B GaAs. The effect of the built-in piezoelectric field, resulting from strained growth, on the gain/absorption spectra is modelled theoretically and measured experimentally. With the piezoelectric field opposing and exceeding the intrinsic field in our structure an externally applied reverse bias can be used to change the net-field in the well from forward to reverse via the flat-band condition. Changing the field in the QW of the passive section influences its absorptive behaviour, changing the light output characteristics. Large hysteresis loops in the light output versus current relation are observed which can be tailored by the applied bias. Additionally, the change in absorption with applied bias provides the possibility of integrated amplitude modulation, avoiding the direct modulation of the active section. An extinction ratio of −11 dB was measured when changing the bias at the absorber by 1 V."
}
@article{Gutiérrez2002553,
title = "Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0–1.1 μm operation",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "553 - 557",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00018-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000186",
author = "M. Gutiérrez and M. Herrera and D. González and G. Aragón and J.J. Sánchez and I. Izpura and M. Hopkinson and R. Garcı́a",
keywords = "Laser",
keywords = "Critical layer thickness",
keywords = "Dislocation multiplication",
keywords = "AlGaAs",
keywords = "(111)",
keywords = "Transmission electron microscopy",
keywords = "InGaAs",
keywords = "MBE",
abstract = "InGaAs/GaAs-based lasers require thick AlGaAs cladding layers to provide optical confinement. Although the lattice mismatch between GaAs and AlGaAs is very low, relaxation may occur due to the thickness requirement for an AlGaAs waveguide of the order of microns. We have studied the relaxation of InGaAs/GaAs lasers with AlGaAs waveguides grown on GaAs (111)B substrates. We have observed by transmission electron microscopy (TEM) that certain AlGaAs layers show a high density of threading dislocations (TDs), whilst other AlGaAs layers remain essentially dislocation free. To explain the experimental results a model based on dislocation multiplication has been developed. TDs in the AlGaAs cladding layers are observed when the critical layer thickness (CLT) for dislocation multiplication has been overcome. Consequently, a design rule based on a modified CLT model for AlGaAs/GaAs (111)B is proposed."
}
@article{Herrera2002559,
title = "The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "559 - 563",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00019-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000198",
author = "M. Herrera and M. Gutiérrez and D. González and G. Aragón and I. Izpura and M. Hopkinson and R. Garcı́a",
keywords = "Climb",
keywords = "Glide",
keywords = "Critical layer thickness",
keywords = "(111)",
keywords = "InGaAs",
keywords = "Transmission electron microscopy",
keywords = "Molecular beam epitaxy",
abstract = "The plastic relaxation of InGaAs/GaAs(111)B quantum wells (QWs) is investigated. Critical layer thickness (CLT) models based on the theory of Matthews–Blakeslee have been applied, assuming that dislocations glide from the substrate. We have observed that when the In-content is above 0.25, a three-pointed star-shaped misfit dislocation (MD) configuration appears. A detailed analysis has shown that this configuration cannot originate from the glide of pre-existing dislocations. Instead, these MDs are generated by climb from an initial nucleus. A modified Matthews–Blakeslee model including an osmotic force component is proposed. The resulting revised CLT depends on the departure of the vacancy concentration from its equilibrium."
}
@article{LeThomas2002565,
title = "Piezoelectric effects in semiconductor heterostructures: applications and consequences",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "565 - 571",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00020-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000204",
author = "N. Le Thomas and N.T. Pelekanos",
keywords = "Piezoelectric effect",
keywords = "Semiconductor",
keywords = "Space-charge",
abstract = "The piezoelectric (PZ) effect in strained semiconductor heterostructures can be used as an additional degree of freedom in designing novel heterostructures with desired optoelectronic properties. After a short review of previous work in the field, we discuss two examples in which the presence of the PZ field is either beneficial or unwelcome. First, we present a wavelength-tunable laser diode whose tuning mechanism is based on the quantum confined Stark effect and we show that the tuning range of the device can be significantly enhanced if the active quantum well contains a PZ field. Next, we discuss the case of nitride heterostructures where unwanted polarization-induced electric fields limit seriously their performance in optoelectronic applications. We show that the use of quaternary nitrides can help circumvent this problem."
}
@article{Nötzel2002573,
title = "Molecular beam epitaxy of quantum wires and quantum dots on patterned high-index substrates",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "573 - 578",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00021-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000216",
author = "Richard Nötzel and Qian Gong and M Ramsteiner and U Jahn and K.J Friedland and K.H Ploog",
keywords = "Quantum wires",
keywords = "Quantum dots",
keywords = "Molecular beam epitaxy",
keywords = "High-index substrate",
abstract = "Using a novel growth mechanism on patterned high-index GaAs (311)A substrates we have developed a new concept to fabricate quantum wires and quantum dots as well as coupled quantum wire–dot arrays by molecular beam epitaxy. The combination of self-organized growth with lithographic patterning and the assistance of atomic hydrogen produces these quasi-planar lateral nanostructure arrays with unprecedented uniformity in size and composition and with controlled positioning on the wafer. The sought for one- and zero-dimensional nature of these quantum wire and quantum dot arrays manifests itself in the superior optical properties. To functionalize our lateral semiconductor quantum wire and quantum dot arrays with the properties of magnetic thin films, epitaxial Fe layers have been grown on GaAs (311)A. Defect free Fe layers are obtained on As-saturated GaAs surfaces. The large electrical conductivity of thin Fe layers indicates reduced Fe–GaAs interface compound formation. An unusual in-plane spontaneous Hall-effect is observed in these epitaxial Fe layers of reduced symmetry."
}
@article{Salem2002579,
title = "Optical anisotropy and photoluminescence temperature dependence for self-assembled InAs quantum islands grown on vicinal (001) InP substrates",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "579 - 582",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00022-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000228",
author = "B Salem and J Olivares and J Brault and C Monat and M Gendry and G Hollinger and H Maaref and G Guillot and G Bremond",
keywords = "Optical anisotropy",
keywords = "Photoluminescence",
keywords = "InP substrates",
abstract = "In this paper, we report on a detailed investigation of the effect of misorientated InP(001) substrates on the optical properties of InAs quantum islands grown by molecular beam epitaxy in the Stranski–Krastanow regime. Temperature-dependent photoluminescence and polarization of photoluminescence (PPL) are studied. PPL shows a high degree of linear polarization, near 40%, for the sample grown on the substrate with 2° off miscut angle towards [110] direction (2°F) and only 16% for the sample grown on the substrate with 2° off miscut angle towards [010] direction (2°B). This result pointing out the growth of InAs quantum wires (QWr) on 2°F substrate and of quasi-isotropic InAs quantum dots (QD) on 2°B substrate. The luminescence remains strong at 300 K as much as 36% of that at 8 K, indicating a strong spatial localization of the carriers in the InAs QIs grown on InP(001)."
}
@article{Sanguinetti2002583,
title = "Built-in electric fields in InAs quantum dots grown on (N11) GaAs substrates",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "583 - 588",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00023-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200023X",
author = "S. Sanguinetti and M. Gurioli and M. Henini",
keywords = "GaAs substrates",
keywords = "Optical properties",
keywords = "Electric field",
abstract = "We report on the optical properties and carrier kinetics of a set of InAs self-assembled quantum dots on (N11)A/B GaAs substrates by means of cw and time-resolved PL. The cw-PL spectra show a blue shift of the PL band on different (N11) QD structures when increasing the carrier photoinjection. This is attributed to a photoinduced screening of the quantum confined Stark shift of the QD optical transition due to a large built-in electric field. The presence of an internal electric field also induces intrinsic optical non-linearity in time-resolved measurements. The analysis of the recombination kinetics shows that the carrier screening occurs inside the QDs, thus demonstrating the intrinsic nature of the built-in field. The dependence of the internal field on the substrate orientation and termination agrees with the presence of piezoelectric field and permanent dipole moment inside the QDs."
}
@article{Ulloa2002589,
title = "Spontaneous emission study of (111) InGaAs/GaAs quantum well lasers",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "589 - 593",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00024-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000241",
author = "J.M. Ulloa and L. Borruel and J.M.G. Tijero and J. Temmyo and I. Esquivias and I. Izpura and J.L. Sánchez-Rojas",
keywords = "Band gap renormalization",
keywords = "Piezoelectric effects",
keywords = "Coulomb interaction",
abstract = "Spontaneous emission spectra of (111) and (100) InGaAs/GaAs QW lasers with high In content are measured up to high injection levels and compared with the theoretical results of our own model. Piezoelectric effects are investigated in (111) devices, finding significant contribution of forbidden transitions and a strong blue shift due to carrier screening of piezoelectric field. Band gap renormalization (BGR) in (111) QW lasers is estimated from the measured broadening of the low energy side of the spectrum comparing with model, and corrected by a fundamental band edge. It is also theoretically calculated, including screening effects of the coulomb interaction, in order to explain the estimated results. BGR is found to be higher in (111) samples than in (100) ones, the difference being mainly due to the hole contribution."
}
@article{tagkey2002595,
title = "Patents alert",
journal = "Microelectronics Journal",
volume = "33",
number = "7",
pages = "595 - 603",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00029-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000290",
key = "tagkey2002595"
}
@article{DeVenuto2002387,
title = "Fault detection in CMOS/SOI mixed-signal circuits using the quiescent current test",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "387 - 397",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00008-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000083",
author = "D De Venuto and M Kayal and M.J Ohletz",
keywords = "Quiescent current",
keywords = "Test",
keywords = "Iddq",
keywords = "Iccq",
keywords = "Silicon-on-insulator",
keywords = "Kink-effect",
keywords = "Sub-threshold current",
keywords = "Defects",
keywords = "Fault simulation model",
abstract = "Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2–3 times lower static power consumption in fully depleted CMOS/SOI compared to bulk CMOS allows quiescent current testing also for high performance analogue circuits at an acceptable defect resolutions. From first simulations and technological considerations, it turned out that quiescent current tests are able to detect not only commonly known defects, but also SOI specific defects such as self-heating, kink-effect or the parasitic bipolar behaviour. It is further shown that in partially depleted thick-film SOI, the kink-effect and parasitic bipolar transistor support the quiescent current test for some specific defects as they elevate the defective quiescent current level. In fully depleted kink-free SOI circuits, the kink-effect may occur due to process failures but then can be detected by quiescent current tests. A special fault simulation model for the kink-effect is presented. The Iccq test technique is studied for a CMOS/SOI Miller operational amplifier. Normal 6-σ variation of the aspect ratio and the threshold voltage do not jeopardise the defect detection in the quiescent current. First, results confirm the good detection capabilities of the quiescent current test, in particular, of failures which are not visible in the output voltage."
}
@article{Chung2002399,
title = "Design curves of breakdown voltage at field plate edge and effect of interface charge",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "399 - 402",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00025-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000253",
author = "Sang-Koo Chung and Seung-Youp Han",
keywords = "Breakdown voltage",
keywords = "Field plate",
keywords = "Interface charge",
abstract = "Useful design curves of breakdown voltage are provided, which allow determination of breakdown voltage at the field plate edge in terms of field plate length, oxide thickness, and substrate doping concentration. The effect of the interface charge on the breakdown voltage is analyzed and determined also from the curves. The analytical results show a fair agreement with the two-dimensional device simulations using MEDICI as well as with the experimental results reported."
}
@article{Hang2002403,
title = "Improved structure for adiabatic CMOS circuits design",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "403 - 407",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00011-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000113",
author = "G. Hang and X. Wu",
keywords = "Low power design technique",
keywords = "Adiabatic circuits",
keywords = "Energy recovery",
abstract = "Two adiabatic circuits with complementary structure and operation are proposed in this paper. They employ two-phase sinusoidal power clock. The power consumption of the proposed circuits is comparable to that of some previously reported circuits. The problem of floating output nodes is solved by connecting two MOS transistors to the power clock. In particular, using the proposed architecture more than one stage of gates can be computed simultaneously within a single clock-phase, compared to only one stage is computed in every phase by most other adiabatic logic families. With this feature, the latency of the complex logic circuit is greatly improved and the number of buffers required for a pipelining circuit is also reduced. In this paper, a 2:1 multiplexer and full adder are illustrated and simulated. From the PSPICE simulation results, the effectiveness of the proposed approach and the low power characteristic of the designed circuits are validated."
}
@article{Vo2002409,
title = "Towards model-based engineering of optoelectronic packaging materials: dielectric constant modeling",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "409 - 415",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00010-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000101",
author = "Hung T. Vo and Frank G. Shi",
keywords = "Dielectric constant modeling",
keywords = "Composite materials",
keywords = "Maxwell–Wagner equation",
keywords = "Interphase characteristics",
abstract = "Increases in data transmission speeds of optoelectronic devices have consequently increased high-frequency requirements for optoelectronic packaging materials including substrate, EMC/EMI shielding, adhesive and encapsulant (molding and underfill) materials. Most of those materials are polymer/filler composites, and critical materials properties for the device design and packaging include the effective dielectric constant, dielectric loss and their frequency and filler concentration dependence. This work presents a systematic theoretical investigation of the effective dielectric constant of polymer/filler composite materials, and its dependence on the filler concentration, the filler/polymer interaction, and the size of fillers. Our results demonstrate that, in contrary to the prevailing views, the filler concentration dependence of the effective dielectric constant is non-monotonic. Depending on the dielectric constant ratio between filler and polymer matrix, and the degree of interaction between filler and matrix, the effective dielectric constant exhibits an extreme as a function of filler concentration. In addition, our model is demonstrated to contain the Maxwell–Wagner formulation as an asymptotic limit. The present results have significant implications to the targeted formulation of optoelectronic packaging materials."
}
@article{Chimienti2002417,
title = "VLSI architecture for a low-power video codec system",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "417 - 427",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00009-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000095",
author = "A. Chimienti and L. Fanucci and R. Locatelli and S. Saponara",
keywords = "Hardware–software co-design",
keywords = "Very large scale integration architectures",
keywords = "Low-power circuits",
keywords = "Rapid prototyping",
keywords = "Video coding",
abstract = "In this paper, the design of a very large scale integration (VLSI) architecture for low-power H.263/MPEG-4 video codec is addressed. Starting from a high-level system modelling, a profiling analysis indicates a hardware–software (HW–SW) partitioning assuming power consumption, flexibility and circuit complexity as main cost functions. The architecture is based on a reduced instruction set computer engine, enhanced by dedicated hardware processing, with a memory hierarchy organisation and direct memory access-based data transfers. To reduce the system power consumption two main strategies have been adopted. The first consists in the design of a low-power high-efficiency motion estimator specifically targeted to low bit-rate applications. Exploiting the correlation of video motion field it attains the same high coding efficiency of the full-search approach for a computational burden lower than about two orders of magnitude. Combining the decreased algorithm complexity with low-power VLSI design techniques the motion estimator power consumption is scaled down to few mW. The second consists in the implementation of a proper buffer hierarchy to reduce memory and bus power consumption in the HW–SW communication. The effectiveness of the proposed architecture has been validated through performance measurements on a prototyping platform."
}
@article{Rosaye2002429,
title = "Characterization of defect traps in SiO2 thin films influence of temperature on defects",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "429 - 436",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00004-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000046",
author = "Jean-Yves Rosaye and Norihiko Kurumado and Mitsuo Sakashita and Hiroya Ikeda and Akira Sakai and Pierre Mialhe and Jean-Pierre Charles and Shigeaki Zaima and Yukio Yasuda and Yurihiko Watanabe",
keywords = "Gate oxide",
keywords = "MOSFET transistor",
keywords = "C–V characteristics",
keywords = "Hysteresis",
keywords = "Slow-state traps",
keywords = "Defects",
keywords = "Activation energy",
abstract = "In order to improve the electrical operation of very thin gate oxide metal-oxide-semiconductor (MOS) devices, it is necessary to understand generated defects in the non-stoichiometric SiOx area and at the Si–SiO2 interface. For this purpose, we extended our new measurement technique, which is a temperature dependent method, to MOSFETs and Al-gate MOS devices to investigate slow-state traps and their relationship with fast-state traps (influence of technology, temperature and field dependence). With this method, activation energies for slow-state traps can be determined. Hydrogen species have been characterized. These defects are created when the MOS capacity is under a strong electric field that induces injection of electrons by tunnel effect through the silicon dioxide, SiO2."
}
@article{A2002437,
title = "Oxide current in MOS transistors operated under charge pumping conditions",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "437 - 441",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00003-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000034",
author = "A. and Benfdila",
keywords = "MOSFET",
keywords = "Substrate current",
keywords = "Oxide current",
keywords = "Charge-pumping method",
keywords = "Carrier emission",
keywords = "Interface states",
keywords = "Oxide traps",
abstract = "The present paper describes an alternative approach for isolating the oxide current from the gate current (GC) and its use for characterizing the bulk oxide in MOS transistors. The method is based on measurements of the gate as well as the substrate currents of MOS transistors pulsed by a train of square wave pulses under charge pumping conditions.
The measurements are done on various experimental devices and different gate and drain/source voltage biasing. The GC has been measured and was found to be of typical behavior when it is plotted with respect to the gate voltage. Moreover, the gate and substrate currents are found to be of complementary shapes when plotted with respect to gate voltage. This behavior is made useful in studying and characterizing the oxide and the interface of MOS transistors."
}
@article{Shapiro2002443,
title = "A comparison of microstrip models to low temperature co-fired ceramic–silver microstrip measurements",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "443 - 447",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00002-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000022",
author = "Andrew A. Shapiro and Martha L. Mecartney and Henry P. Lee",
keywords = "Low temperature cofired ceramic",
keywords = "Packaging",
keywords = "High frequency",
keywords = "Interconnects",
abstract = "A number of analytical and numerical models for microstrip lines are used for analyzing the propagation loss of CaO–B2O3–SiO2-based low temperature co-fired ceramics (LTCC) subjected to different processing conditions. An optimal microstrip model is identified for the frequency range between 0.5 and 15 GHz and used for the extraction of dielectric loss for this material system. The measurements show that the dominant loss contribution changes from the conductor to dielectric loss as the processing temperature for the LTCC dielectrics is lowered. Comparison with microstructural analysis shows that the increase in dielectric loss is strongly correlated to an increase in the amorphous SiO2 content in the ceramic matrix."
}
@article{Ymeri2002449,
title = "On the frequency-dependent line admittance of VLSI interconnect lines on silicon-based semiconductor substrates",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "449 - 458",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00158-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001586",
author = "H. Ymeri and B. Nauwelaers and K. Maex",
keywords = "IC interconnects",
keywords = "Frequency-dependent admittance",
keywords = "Multilayer Green's function",
keywords = "Silicon substrate",
keywords = "On-chip interconnects",
abstract = "In this paper, a method for analysis and modelling of transmission interconnect lines with zero- or non-zero thickness on Si–SiO2 substrate is presented. The analysis is based on semi-analytical expressions for the frequency-dependent transmission line admittances. The electromagnetic concept of free charge density is applied. It allows us to obtain integral equations between electric scalar potential and charge density distributions. These equations are solved by the Galerkin procedure of the method of moments. This new model represents narrow and thick line interconnect behaviour over a wide range of frequencies up to 20 GHz. The accuracy of the developed method in this work is validated by comparing with the rigorous simulation data obtained by full-wave electromagnetic solver and CAD-oriented equivalent-circuit modelling approach. The response of the proposed model is shown to be in good agreement with the frequency-dependent capacitance and conductance characteristics of general coupled multiconductor on-chip interconnects."
}
@article{Zhang2002459,
title = "Integrated hierarchical design of microelectrofluidic systems using SystemC",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "459 - 470",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00157-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001574",
author = "Tianhao Zhang and Krishnendu Chakrabarty and Richard B. Fair",
keywords = "SystemC",
keywords = "Microsystem",
keywords = "System-level",
abstract = "This paper describes the role of SystemC in developing an integrated modeling and simulation environment for microelectrofluidic systems (MEFS). Based on the unique modeling and simulation needs for MEFS, we examine suitability of several existing simulation languages. These languages include VHDL/VHDL-AMS, SLAM, Matlab, C/C++, and SystemC. Next, SystemC is justified as a viable candidate for complete MEFS modeling and simulation. The architecture of the environment and the associated functional packages are discussed. Its application is illustrated through the design of a microchemical handling system."
}
@article{Unchwaniwala2002471,
title = "Noise generation, propagation and effects on RF components in system-on-a-chip packaging",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "471 - 478",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00154-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001549",
author = "Khouzema B Unchwaniwala and Michael F Caggiano and Robert C Frye",
keywords = "Substrate coupling noise",
keywords = "Crosstalk power spectral density",
keywords = "Fast switching digital circuits",
keywords = "Die-attach inductance",
abstract = "Substrate coupling noise effects in wireless receiver systems in terms of the crosstalk power spectral density induced from the fast switching digital circuits is the center of study in this paper. Deterioration in performance of a low noise amplifier is plotted against various values of die-attach inductance, inductance on digital ground pins, physical separation between the analog and digital circuits on-chip, number of simultaneous switching output buffers, etc. Different Ball Grid Array Packages, both the wire bonded and flip-chip attached versions have been studied. The return loss and insertion loss for paths from the on-chip wire bond pad to connect pads on the printed circuit boards have been plotted. Results show that noise reduces by a greater amount for reduction in die-attach inductance as compared to a reduction in inductance on the digital ground pin."
}
@article{AS2002479,
title = "Nonautonomous pulse-driven chaotic oscillator based on Chua's circuit",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "479 - 486",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00156-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001562",
author = "A.S. and Elwakil",
keywords = "Chaos",
keywords = "Oscillators",
keywords = "Relaxation oscillators",
keywords = "Nonautonomous oscillators",
abstract = "A novel nonautonomous chaotic oscillator based on the passive structure of Chua's circuit is proposed. Unlike most of the available members of this class of chaotic oscillators, the proposed circuit is driven by a periodic bipolar pulse-train rather than by sinusoidal excitation. This results in equilibrium points which have fixed positions in space. The circuit employs self feedback via a single comparator, which is the only nonlinear device involved. The output of this comparator is a chaotic bipolar pulse-train. A mathematical model which captures the behavior of the circuit is derived and experimental results are presented. Also, a version of the circuit with a practical realization of the driving pulse generator is considered and a variant structure with an alternatively excited node is discussed."
}
@article{Papadopoulou2002487,
title = "Simulation and experimental results on the switching behaviour of bulk-barrier diodes",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "487 - 494",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00149-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001495",
author = "P Papadopoulou and N Georgoulas and A Thanailakis",
keywords = "Simulation",
keywords = "Switching behaviour",
keywords = "Bulk-barrier diodes",
abstract = "In this paper, the switching behaviour of bulk-barrier diodes (BBDs) as a function of technological and operational parameters is studied. This study is based on the transient simulation results obtained with a 2D device simulator (S-PISCES), as well as on experimental results obtained by turn-off measurements on the fabricated structures. The results of this study show that the technological parameters (doping concentrations), as well as the geometrical sizes (middle-layer width and substrate thickness) and the bias conditions (applied voltage), have significant effects on the switching time of BBDs. The appropriate choice of these parameters can reduce the BBD switching time in the picosecond range. Finally, good agreement among theory, simulations and experimental results was achieved."
}
@article{Anwar2002495,
title = "Gate controlled 2-DEG varactor for VCO applications in microwave circuits",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "495 - 500",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00142-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001422",
author = "A. Anwar and B. Nabet and R. Ragi and J.E. Manzoli and M.A. Romero",
keywords = "Varactor",
keywords = "Voltage controlled oscillator",
keywords = "Optically controlled oscillator",
keywords = "Two-dimensional gas",
keywords = "Mixing",
abstract = "A novel gate controlled Schottky diode varactor is introduced. The three-terminal varactor is a modulation-doped heterostructure of AlGaAs/GaAs with two Schottky contacts, similar to a metal–semiconductor–metal (MSM) diode. Schottky metal contacts are made to a two-dimensional electron gas (2-DEG). The third contact, the gate contact is formed from highly doped n+ GaAs material to allow an open optical window that can be used for optical gating and mixing. Structure capacitance is less than 1 PF and a change of more than 30% from the zero bias capacitance is observed with the applied gate voltage. On the basis of our quasi two-dimensional C–V model, the layer structure and device dimensions can be optimized and scaled to cover a wide range of operations in the microwave and millimeter wave regimes."
}
@article{Lee2002501,
title = "FPGA-based digit-serial CSD FIR filter for image signal format conversion",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "501 - 508",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00137-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001379",
author = "Hanho Lee and Gerald E Sobelman",
keywords = "FPGA",
keywords = "CSD",
keywords = "Digit-serial",
keywords = "Arithmetic",
keywords = "Adder",
keywords = "Multiplier",
keywords = "FIR filter",
abstract = "This paper proposes the FPGA implementation of the digit-serial Canonical Signed-Digit (CSD) coefficient FIR filters which can be used as format conversion filters in place of the ones employed for the MPEG2 TM 5 (test model 5). Canonical representation of a signed digit (CSD) is a method used to reduce cost by representing a signed number using the least amount of non-zero digits, thereby reducing the number of multiply operations. As Field Programmable Gate Arrays (FPGAs) have grown in capacity, improved in performance, and decreased in cost, they are becoming a viable solution for performing computationally intensive tasks, with the ability to tackle applications formerly reserved for custom chips and programmable digital signal processing (DSP) devices. A digit-serial CSD FIR filter design is realized and practical design guidelines are provided using FPGAs. An analysis of the performance comparison of bit-serial, serial distributed arithmetic, and digit-serial CSD FIR filters on a Xilinx XC4000XL-series FPGA is described. The results show that the proposed digit-serial CSD FIR filter is compact and an efficient implementation of real-time DSP applications on FPGAs."
}
@article{A2002509,
title = "Structured Electronic Design: High-performance Harmonic Oscillators and Bandgap References: By Arie van Staveren, Chris J.M. Verhoeven and A.H.M. van Roermund. Kluwer Academic Publishers, Boston, ISBN 0-7923-7283-2, 2001. Hardback, 284p, 120$",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "509 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00005-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000058",
author = "A. and Saidane"
}
@article{A2002510,
title = "Introduction to Electrical Engineering: Mulukutla S. Sarma, Oxford University Press, N.Y, 2001. ISBN 0 19 513604 7, Hardback, 870p.",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "510 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00006-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920200006X",
author = "A. and Saidane"
}
@article{A2002511,
title = "Design of Analog Filters: Rolf Schaumann, Mac E. Van Valkenburg, Oxford University Press, N.Y, 2001. ISBN 0 19 511877 4, Hardback, 737p.",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "511 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00007-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000071",
author = "A. and Saidane"
}
@article{tagkey2002513,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "33",
number = "5–6",
pages = "513 - 521",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(02)00027-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269202000277",
key = "tagkey2002513"
}
@article{TutorSánchez2002311,
title = "Preface",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "311 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00123-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001239",
author = "Joaquı́n Tutor-Sánchez and Isaac Hernández-Calderón and Jose Roberto Leite"
}
@article{Henini2002313,
title = "Electrical and optical properties of self-assembled quantum dots",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "313 - 318",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00124-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001240",
author = "M. Henini and A. Patanè and A. Polimeni and A. Levin and L. Eaves and P.C. Main and G. Hill",
keywords = "Quantum wires",
keywords = "Quantum dots",
keywords = "Fabrication methods",
abstract = "One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two, i.e. quantum wires (QWi) and quantum dots (QDs), in order to realise novel devices that make use of low-dimensional confinement effects.
One of the promising fabrication methods is to use self-organised three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. Quantum dots, for example, are believed to provide a promising way for a new generation of optical light sources such as injection lasers. While quantum well structures are already widely used in optoelectronic devices, QWi and QDs appear to be much more difficult to fabricate for this purpose. Some of the electrical and optical properties of self-assembled QDs will be reported in this paper."
}
@article{Lüscher2002319,
title = "Quantum wires and quantum dots defined by lithography with an atomic force microscope",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "319 - 321",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00125-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001252",
author = "S. Lüscher and A. Fuhrer and R. Held and T. Heinzel and K. Ensslin and M. Bichler and W. Wegscheider",
keywords = "Atomic force microscope",
keywords = "Nanostructures",
keywords = "Lithography",
abstract = "Semiconductor nanostructures are realized by patterning AlGaAs/GaAs heterostructures with an atomic force microscope. Steep potential walls, precise pattern transfer and a combination of in-plane and top gates can be achieved with this technique. The electronic properties of nanostructures defined in this way are discussed on two examples, namely a quantum point contact and a single electron transistor. For the quantum point contact we demonstrate quantized conductance at temperatures of 4 K and above. This indicates the strong confinement energy in this system. For the single electron transistor, the realization of special potential shapes and the observation of high-quality Coulomb blockade is shown."
}
@article{JR2002323,
title = "Origin of the radiative emission in blue–green light emitting diodes based on GaN/InGaN heterostructures",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "323 - 329",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00126-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001264",
author = "J.R. and Leite",
keywords = "InGaN",
keywords = "Phase separation",
keywords = "Quantum dots",
keywords = "Raman",
keywords = "Nitrides",
abstract = "Phase separation effects induced by spinodal decomposition taking place in cubic InxGa1−xN epitaxial layers were investigated by means of resonant Raman scattering (RRS) and X-ray diffractometry (XRD) experiments. The alloy epilayers were grown by radio-frequency plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Ab initio theoretical calculation of the alloy phase diagram predicts the formation of In-rich phases in the layers which is confirmed by the RRS and XRD experiments. Photoluminescence observed at room temperature and 30 K from the layers shows light emission in the blue–green region of the spectrum. RRS experiments demonstrated that the observed emission is directly linked to the In-rich separated phases (quantum dots) in the alloy. The results support the model that the origin of light emission in nitride-based light emitting diodes and laser diodes is related to quantum confinement effects taking place in quantum dots formed in the InGaN layers, active media of the devices."
}
@article{Ueta2002331,
title = "IV–VI Compound heterostructures grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "331 - 335",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00127-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001276",
author = "A.Y. Ueta and E. Abramof and C. Boschetti and H. Closs and P. Motisuke and P.H.O. Rappl and I.N. Bandeira and S.O. Ferreira",
keywords = "Molecular beam epitaxy",
keywords = "Narrow gap semiconductors",
keywords = "Heterostructures",
keywords = "Multi-quantum wells",
keywords = "IV–VI compounds",
keywords = "Lead salts",
abstract = "Structural and optical characterization of some IV–VI superlattices (SL) and multi-quantum wells (MQW) grown by molecular beam epitaxy (MBE) on BaF2 (111) substrates are shown. Three different types of systems were investigated, namely, PbTe/PbSnTe, PbTe/SnTe and PbTe/PbEuTe. High-resolution X-ray diffraction analysis was performed to determine the strain in the structures. The analysis revealed sharp interfaces and good thickness control. The transition energies between the confined levels in the wells were obtained from the absorption steps observed in infrared transmission measurements. Preliminary results on PbTe/Si heterojunction grown by MBE are also presented."
}
@article{Dı́azArencibia2002337,
title = "Determination of the minimum island size for full exciton localization due to thickness fluctuations in Zn1−xCdxSe quantum wells",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "337 - 339",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00128-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001288",
author = "P. Dı́az-Arencibia and I. Hernández-Calderón",
keywords = "Quantum wells",
keywords = "II–VI Semiconductors",
keywords = "Photoluminescence",
keywords = "Excitons",
keywords = "Localization",
keywords = "CdSe",
keywords = "ZnSe",
abstract = "Fluctuations of the thickness of quantum wells (QWs) of few monolayers are one of the causes of exciton localization. Here, we present the results of the determination of the minimum lateral dimensions of islands produced by thickness fluctuations in Zn1−xCdxSe QWs, which cause full exciton localization. We have calculated the localization energy of excitons in the frame of the factorized-envelope approximation. We found that the excitons are well localized in the islands of the QW when their lateral dimensions are larger than ∼15 times the exciton Bohr radius."
}
@article{Souza2002341,
title = "Amplitude modulators based on the Stark effect",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "341 - 348",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00129-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100129X",
author = "P.L. Souza and M.P. Pires and B. Yavich and F. Racedo and C.V.-B. Tribuzy",
keywords = "Amplitude modulators",
keywords = "InGaAs/InAlAs",
keywords = "Multiple quantum wells",
keywords = "Insertion loss",
keywords = "Contrast ratio",
keywords = "Chirp",
keywords = "Polarization independence",
abstract = "Amplitude modulators are basic devices for long distance optical communication. Their development started using the electro-absorption of bulk material, called the Franz–Keldysh effect. High frequency applications required larger absorption changes with electric field, therefore, attention has been shifted to multiple quantum well structures where the quantum confined Stark effect (QCSE) could improve device performance at high bit rates. However, if the amplitude modulators based on the QCSE are expected to be used in the next multigigabit long-haul fiber transmission systems, the multiple quantum well structure should be optimized taking into consideration parameters such as insertion loss, contrast ratio, chirp, polarization independence, operation voltage and wavelength. Much work has been done in several III–V semiconductor systems. The results of a detailed optimization for InGaAs/InAlAs multiple quantum well structures are presented, as an example."
}
@article{Camacho2002349,
title = "Temperature dependence of Raman scattering and luminescence of the disordered Zn0.5Cd0.5Se alloy",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "349 - 353",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00130-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001306",
author = "J Camacho and I Loa and A Cantarero and I Hernández-Calderón",
keywords = "II–VI ternary alloys",
keywords = "Raman spectroscopy",
keywords = "Photoluminescence",
keywords = "CdSe",
keywords = "ZnSe",
abstract = "We report on luminescence and Raman scattering measurements of zincblende Zn0.5Cd0.5Se thin film grown by molecular beam epitaxy. From the luminescence data of the exciton peak, the dependence of the energy gap with temperature [dEg/dT=(4.35±0.01)×10−4 meV/K] and zero-temperature phonon renormalization energy (ΔE(0)=30±1 meV) have been obtained. The broadening of the excitonic emission as the temperature increases is mainly due to scattering processes with longitudinal optical phonons and residual ionized impurities. Raman scattering shows a multiphonon structure, which depends on the temperature. At low temperatures, up to the fifth-order phonon peaks appear due to resonant effects. The increase in the Raman intensity as the temperature decreases is discussed in terms of a model which gives a very good quantitative agreement of the relative intensity between successive phonon peaks."
}
@article{Llorens2002355,
title = "Energy levels of a quantum ring in a lateral electric field",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "355 - 359",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00131-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001318",
author = "J.M. Llorens and C. Trallero-Giner and A. Garcı́a-Cristóbal and A. Cantarero",
keywords = "III–V Semiconductors",
keywords = "Quantum dots",
keywords = "Electrooptical effects",
abstract = "The electronic states of a semiconductor quantum ring (QR) under an applied lateral electric field are theoretically investigated and compared with those of a quantum disk of the same size. The eigenstates and eigenvalues of the Hamiltonian are obtained from a direct matrix diagonalization scheme. Numerical calculations are performed for a hard-wall confinement potential and the electronic states are obtained as a function of the electric field and the ratio r2/r1, where r2 (r1) is the outer (inner) radius of the ring. The effects of decreasing symmetry and mixing on the energy levels and wave functions due to the applied electric field are also studied. The direct optical absorption are reported as a function of the electric field."
}
@article{VR2002361,
title = "Electronic properties of Fibonacci quasi-periodic heterostructures",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "361 - 364",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00132-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100132X",
author = "V.R. and Velasco",
keywords = "Electronic states",
keywords = "Heterostructures",
keywords = "Quasiperiodic system",
abstract = "We study the electronic states of different GaAs–AlAs Fibonacci quasi-perodic heterostructures grown along the (001) direction. We employ an empirical tight-binding Hamiltonian including spin–orbit coupling together with the surface Green function matching method. We present results for the eighth Fibonacci generation formed from different building blocks. We compare these results with those of the constituent quantum wells and with those of heterostructures containing the same number of GaAs and AlAs slabs after periodic repetition of the building blocks. No Fibonacci spectrum is found in the energy regions near the conduction and valence band edges of GaAs. A selective localization of the local density of states in the GaAs layers is found for many electronic states."
}
@article{MoysésAraújo2002365,
title = "Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN:Si",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "365 - 369",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00133-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001331",
author = "C. Moysés Araújo and J.R.L. Fernandez and A. Ferreira da Silva and I. Pepe and J.R. Leite and Bo E. Sernelius and A. Tabata and C. Persson and R. Ahuja and D.J. As and D. Schikora and K. Lischka",
keywords = "Resistivity",
keywords = "Metal–nonmetal transition",
keywords = "Band-gap shift",
keywords = "Photoluminescence",
abstract = "The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, Nc, for the metal–nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition. The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest."
}
@article{SouzadeAlmeida2002371,
title = "Electrical field effects in n-type MOSFET and metal–nonmetal transition",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "371 - 373",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00134-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001343",
author = "J. Souza de Almeida and C. Moysés Araújo and I. Pepe and A. Ferreira da Silva",
keywords = "Metal–nonmetal transition",
keywords = "Electric field",
keywords = "Metal-oxide semiconductor field effect transistors",
abstract = "The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been investigated. The binding and correlation energies are strongly dependent on the electric field and impurity location. The Hubbard–Mott like model provides further evidence of a MNM transition in agreement with recent experimental findings."
}
@article{AtencoAnalco2002375,
title = "Surface relaxation frequency of ground-state exciton in quantum wells",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "375 - 378",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00135-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001355",
author = "N. Atenco-Analco and N.M. Makarov and F. Pérez-Rodrı́guez",
keywords = "Excitons",
keywords = "Disordered systems",
keywords = "Quantum wells",
abstract = "We derive and analyze the relaxation frequency ν of exciton in a quantum well using the self-consistent Green's function method. The exciton relaxation is caused by the individual electron and hole scattering from the randomly-rough well interface. We reveal two types of ground-state exciton resonance and obtain the criteria for the transition from the asymmetric (sharp) resonance to the symmetric (broad) one. The dependence of the excitron–surface relaxation on the microscopic parameters of the interface defects, the average well width d and on the exciton characteristics is analyzed analytically. Specifically, in the case of sharp resonance the frequency ν∝d−6, whereas for broad resonance ν∝d−3. Moreover, ν is proportional to the ratio of the total exciton mass M over the squared reduced mass μ2 (ν∝M/μ2)."
}
@article{H2002379,
title = "The dielectric response function of systems with reduced dimensionality",
journal = "Microelectronics Journal",
volume = "33",
number = "4",
pages = "379 - 385",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00136-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001367",
author = "H. and Rodrı́guez-Coppola",
keywords = "Dielectric",
keywords = "Semiconductor",
keywords = "Dimensionality",
abstract = "The dielectric response function of the electron gas in a system with reduced dimensionality within the RPA and the Hubbard approximation, are given by using a linear response theory in which the conditions of a multisubband spectrum and finite spatial localization of the wavefunction in one, two or three dimensions, proper of such systems, are taken into account. The final expressions for the dielectric response function is given in each case and its general properties are analyzed. These results are applied to the calculations of the intrasubband and the intersubband polarizabilities in a quantum well (QW) and a quantum well wire (QWW). For the QW, the analysis of plasmons in a semiconductor based and a metal-based QW are given and compared with other theoretical calculations. In the metallic QW, exchange provokes the stabilization of the modes with respect to the RPA plasmons. For the QWW, the exchange modifies the polarizability in both the intrasubband and the intersubband transitions. The main arguments to perform the analysis to achieve the dielectric response function for the quantum dot (QD) in the above both approximations and for the Singwi–Tosi–Lang–Sjölander (STLS) approximation (which takes account of exchange and correlation) for the QD, the QW and the QWW are outlined."
}
@article{Tsimperidis2002191,
title = "A single-electron three-input AND gate",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "191 - 195",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00151-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001513",
author = "I Tsimperidis and I Karafyllidis and A Thanailakis",
keywords = "Single-electron circuits",
keywords = "Logic gates",
keywords = "Nanoelectronics",
abstract = "The design of a single-electron AND gate with three inputs is presented for the first time in this paper. The operation of this gate has been simulated using a well-known single-electron circuit simulator. Furthermore, the stability of its operation has been studied by constructing the free-energy history diagram, and by constructing and analyzing the corresponding three-dimensional stability plot, using Monte Carlo simulation. Simulation has verified the correct and stable operation of the gate."
}
@article{Chauhan2002197,
title = "Effect of ionizing radiation on MOS capacitors",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "197 - 203",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00152-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001525",
author = "R.K. Chauhan and P. Chakrabarti",
keywords = "MOS capacitor",
keywords = "Radiation effects",
keywords = "MOS devices",
abstract = "A numerical model of metal-oxide-semiconductor (MOS) capacitor has been developed to investigate the effect of ionizing radiation on the characteristics of the device during exposure and also in the post-irradiated condition. The model takes into account the effect of radiation-induced changes in silicon-dioxide as well as in silicon substrate of MOS structure. It is found that the total high frequency capacitance of the device during exposure to radiation is different from its value in the post-irradiated condition. The results of the study are expected to be useful in predicting the behavior of MOS based devices operating in radiation environment."
}
@article{Rashmi|Kranti2002205,
title = "Impact of strain relaxation of AlmGa1−mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched AlmGa1−mN/GaN HEMTs",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "205 - 212",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00148-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001483",
author = "Rashmi and A. Kranti and S. Haldar and R.S. Gupta",
keywords = "AlmGa1−mN/GaN HEMTs",
keywords = "Aluminum composition",
keywords = "Strain relaxation",
keywords = "Piezoelectric and spontaneous polarization",
keywords = "2-DEG sheet charge density",
keywords = "Current–voltage characteristics",
keywords = "Output conductance",
abstract = "An accurate charge control model to investigate the effect of aluminum composition, strain relaxation, thickness and doping of the AlmGa1−mN barrier layer on the piezoelectric and spontaneous polarization induced 2-DEG sheet charge density, threshold voltage and output characteristics of partially relaxed AlmGa1−mN/GaN HEMTs is proposed. The strain relaxation of the barrier imposes an upper limit on the maximum 2-DEG density achievable in high Al content structures and is critical in determining the performance of lattice mismatched AlmGa1−mN/GaN HEMTs. The model incorporates the effects of field dependent mobility, parasitic source/drain resistance and velocity saturation to evaluate the output characteristics of AlmGa1−mN/GaN HEMTs. Close proximity with published results confirms the validity of the proposed model."
}
@article{Arshak2002213,
title = "Investigation into a novel humidity sensor operating at room temperature",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "213 - 220",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00150-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001501",
author = "K.I. Arshak and K. Twomey",
keywords = "Humidity sensor",
keywords = "Thick film technology",
keywords = "Sensor sensitivity",
abstract = "The investigation into a novel thick film material, a combination of MnO, ZnO and Fe2O3, is documented for humidity sensing applications. To date, no other accounts using this combination for humidity sensing have been reported in the literature. Different paste preparations have been investigated in full, including the effect of increasing polymer content for the polymer samples, and the effect of different firing profiles for the cermet samples. RuO2 has been considered as a method for improving the conductivity of the samples. DC and AC conduction studies have been carried out on different polymer and cermet pastes. From the AC conduction studies, it is confirmed that electronic tunnelling is the dominant conduction mechanism. From the DC conduction studies, space charge limited conduction has been observed. A large number of sensor samples have been manufactured and tested. The fabrication and characterization of three typical sensor samples is presented and discussed in this paper, sample 1: vacuum-fired cermet sensor, sample 2: air-fired cermet sensor and sample 3: 10:1 polymer sensor. The sensor pattern consists of an interdigitated conductor on top of which a 30 μm thick sensing layer is printed using screen-printing technology. The thermal effect of the sensors is quite low, ranging from a minimum of 0.0037%/°C (sample 1) to a maximum of 0.0085%/°C (sample 3). In comparison, the measured humidity sensitivity values are much higher, ranging from 0.0356%/RH% (sample 1) to 1.697%/RH% (sample 2). All the samples exhibit a low drift over a 1 year span, low hysteresis, high linearity and reasonably fast response times."
}
@article{Zhou2002221,
title = "Thickness dependent glass transition temperature of PECVD low-k dielectric thin films: effect of deposition methods",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "221 - 227",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00147-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001471",
author = "H. Zhou and H.K. Kim and F.G. Shi and B. Zhao and J. Yota",
keywords = "Deposition methods",
keywords = "Glass transition temperature",
keywords = "Low-k dielectrics",
keywords = "Thickness dependence",
keywords = "PECVD",
abstract = "Low-k dielectric carbon-doped silicon dioxide films created by Plasma Enhanced Chemical Vapor Deposition (PECVD) using a six-station sequential deposition system exhibit different glass transition behavior from films created by PECVD in a single deposition station. The enhanced glass transition temperature (Tg) for the PECVD thin films of a layer consisting of six sub-layer deposited in a six-station sequential deposition system to the Tg for films of a single layer deposited in a single deposition system is traced back to the introduced film interface effect inherent to the different deposition methods. Both types of PECVD thin films range in thickness from 50 to 1255 nm and show an increasing Tg with decreasing film thickness. The observed glass transition behavior for films with six sub-layers can be well explained by a theoretical model of thickness dependent Tg for multiple sub-layers obtained by modifying the currently existing theoretical model for the single layer thickness dependent Tg behavior, which explains the observed thickness dependent Tg for single layer PECVD thin films."
}
@article{Koh2002229,
title = "Investigation of the effects of byproduct components in Cu plating for advanced interconnect metallization",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "229 - 234",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00122-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001227",
author = "L.T. Koh and G.Z. You and C.Y. Li and P.D. Foo",
keywords = "Copper electroplating",
keywords = "High performance liquid chromatography",
keywords = "Aged bath",
keywords = "Gap fill",
keywords = "Additive byproducts",
abstract = "This paper discusses the effects of byproduct components generated from a commercially available two components additive package on the copper plating performance for advanced interconnect metallization. The increase in accumulative breakdown products from the sulfur-containing type-A additive during the electroplating (ECP) process, measured using high performance liquid chromatography (HPLC), showed a detrimental effect on via fill performance. These vias with voids may fail by open circuit sooner due to electromigration. Besides, increase of in-film sulfur content was found from the analysis of secondary-ion mass spectrometry (SIMS) on the film electroplated using heavily used plating solution. It was suggested that the increase of incorporated sulfur impurities could render in slower self-annealing rate of the as-plated copper film due to the grain boundary pinning effect."
}
@article{Allison2002235,
title = "A MEMS Brownian ratchet",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "235 - 243",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00096-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000969",
author = "Andrew Allison and Derek Abbott",
keywords = "Brownian ratchet",
keywords = "MEMS",
keywords = "Re-parameterisation",
abstract = "A Brownian ratchet is a device that can rectify the random Brownian motion of particles to yield a directed steady-state flow. We can imagine a thermofluid field of particles, which interact with the ratchet. The laws of thermodynamics imply that the ratchet must use energy from some other source.
The dynamics of continuous-time Brownian ratchets are determined by a stochastic partial differential equation. We have used a simplified discrete-time model of a Brownian ratchet called ‘Parrondo's games’, which are governed by a difference equation. In their original form, Parrondo's games are a finite set of simple games of chance. An indefinite pure sequence of any single game is neutral or even losing. A periodic or randomised sequence of mixed games can be winning. There is a steady state flow of probability in the preferred direction.
We have been able to design a feasible and consistent device, by mapping the conservation law of total probability onto the law of conservation of charge. This device can absorb energy from a mechanical field to produce a directed flow of charge. The fundamental architecture is based on a ‘bucket-brigade’ device. The capacitors are 2-port MEMS devices. We use CMOS transmission gates to connect the capacitors in the required topology.
We present an analysis and simulation of the MEMS Brownian ratchet and suggest some possible applications."
}
@article{Woo2002245,
title = "Phase-locked loop with dual phase frequency detectors for high-frequency operation and fast acquisition",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "245 - 252",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00155-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001550",
author = "Youngshin Woo and Young Min Jang and Man Young Sung",
keywords = "Dual phase frequency detectors",
keywords = "Phase-locked loop",
keywords = "High frequency",
keywords = "Fast acquisition",
keywords = "Low jitter",
keywords = "CMOS",
abstract = "The sequential phase frequency detector (PFD) has an unlimited error detection range and the precharge PFD has one and a half times better resolution performance than the sequential PFD. Therefore, by selective operation of the appropriate PFD connected to the well-adjusted charge pump, an unlimited error detection range, a high-frequency operation, and a higher speed lock-up time can be achieved. In this paper, we propose a phase-locked loop (PLL) with dual PFDs in which advantages of both PFDs can be combined. This structure can improve the tradeoff between acquisition behavior and locked behavior."
}
@article{Sahu2002253,
title = "A fuzzy logic based approach for parametric optimization of MOS operational amplifiers",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "253 - 264",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00089-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000891",
author = "Biranchinath Sahu and Aloke K. Dutta",
keywords = "Optimization",
keywords = "Fuzzy constraints",
keywords = "Analog design automation",
abstract = "In this work, we have used the concept of fuzzy logic to build a CAD tool for the parametric optimization of MOS operational amplifiers (op-amps). In order to capture human intentions to express the requirements for a particular application, e.g. minimize power, maximize gain, etc., each of the performance specifications of a given topology is assigned a membership function to measure the degree of fulfillment of the objectives and the constraints. A number of objectives are optimized simultaneously by assigning weights to each of them representing their relative importance, and then by clustering them to form the objective function, which is solved by Powell's direct search algorithm. After optimization, the program creates a SPICE netlist of the circuit topology for the verification of the design. Initially, this approach was used for parametric optimization of simple bipolar and MOS circuits, e.g. current mirrors, gain stages, differential amplifiers, etc. Encouraged by these results, it was applied to much more complex blocks, such as op-amps. The design results obtained from our optimization program showed an excellent agreement with those obtained from SPICE simulation for the op-amp topologies considered in this work."
}
@article{Zardalidis2002265,
title = "A single-electron half-adder",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "265 - 269",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00140-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001409",
author = "George T. Zardalidis and Ioannis Karafyllidis",
keywords = "Single-electron circuits",
keywords = "Nanoelectronics",
abstract = "A single-electron half-adder is presented in this paper. Bits of information are represented by the presence or absence of single electrons at conducting islands. The logic operation of the half-adder is verified using simulation, whereas the stability of its operation is analysed using the Monte Carlo method."
}
@article{Štuikys2002271,
title = "Two approaches for developing generic components in VHDL",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "271 - 277",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00141-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001410",
author = "V. Štuikys and G. Ziberkas and R. Damaševičius and G. Majauskas",
keywords = "IP",
keywords = "Generic component design",
keywords = "Generic component model",
keywords = "Component-based VHDL generation",
keywords = "Target language",
keywords = "Scripting language",
abstract = "We describe two approaches for developing generic components in VHDL. The first approach uses pure VHDL abstractions. The second uses VHDL abstractions combined together with those of the scripting language Open PROMOL we have developed aiming at building generic components and component-based generators. Both approaches are based on the generic component model. Due to the usage of the monolithic, hierarchical and generative architectures within the model, its implementation ensures the key solutions, reduces the effect of the complexity of the problem, and increases productivity in IC design, respectively. We deliver a comparison of the approaches and describe the experiments we carried out."
}
@article{Platts2002279,
title = "Rapid inductive fault analysis for high-yield circuits",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "279 - 284",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00138-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001380",
author = "A Platts and D Taylor",
keywords = "IFA",
keywords = "Simulation speed",
abstract = "Inductive fault analysis (IFA) is a powerful tool for estimating yield loss due to faults caused by particulate contamination during processing. The major disadvantage of IFA is that it is essentially an empirical technique and involves the simulation of millions of identical die in order to arrive at meaningful results. This paper demonstrates that the analysis of high-yield circuits can be speeded up considerably by simulating fewer circuits, but using appropriately scaled defect densities."
}
@article{Feig2002285,
title = "Functional verification of instruction processing units through control flow modeling",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "285 - 299",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00139-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001392",
author = "Rami Feig and Shlomo Weiss",
keywords = "Functional verification",
keywords = "Coverage measurement",
keywords = "Pipeline",
abstract = "The design verification of state-of-the-art high-performance microprocessors has become a significant challenge for test engineers. Deep pipelines, multiple execution units, out-of-order and speculative execution techniques, typically found in such microprocessors, contribute much to this complexity. Conventional methods, which treat the processor as a logic state machine or apply architectural level tests, fail to provide coverage of all possible corner cases in the design. This paper presents a functional verification method for modern microprocessors, which is based on innovative models of the microprocessor architecture, intended to cover the testing of all corner cases. In order to test the models presented in this work, an architecture independent coverage measurement system has been developed. The models were tested with both random code and real world applications in order to determine which of the two achieves higher coverage."
}
@article{tagkey2002301,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "33",
number = "3",
pages = "301 - 310",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00159-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001598",
key = "tagkey2002301"
}
@article{Abbott20021,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "1 - ",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00097-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000970",
author = "Derek Abbott and Bernard Courtois"
}
@article{Rehfuß20023,
title = "Micro coil modeling — benefit and implementation of a permeable layer",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "3 - 10",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00098-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000982",
author = "S. Rehfuß and C. Marschner and D. Peters and H. Bolte and R. Laur",
keywords = "Micro coil",
keywords = "Modeling",
keywords = "Telemetry",
keywords = "Permeable layer",
keywords = "Simulation",
abstract = "Rectangular micro coils which are used in a wide range of applications (e.g. medical or automotive area) are the main components of appropriate wireless transmission systems for frequencies up to 20 MHz. As shown in previous works the self-inductance of micro coils has to be maximized to achieve a higher working distance. This can be done by the usage of a permeable layer underneath the micro coil.
The existing model of the micro coil is extended by the use of the magnetic image method to include the inductance yield caused by the permeable layer. The underlying permeable layer or substrate is also modeled accurately to include eddy current phenomena and parasitic elements. To do this, the layer and the substrate respectively are divided into segments analog to the structure of the micro coil. Each segment is described by lumped elements. All elements are connected together to build up a network, which will be used to calculate the terminal impedance.
The model and first results will be presented."
}
@article{Peters200211,
title = "Modeling and designing quadratic membrane structures",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "11 - 19",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00099-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000994",
author = "D. Peters and H. Bolte and C. Marschner and S. Rehfuss and R. Laur",
keywords = "Modeling",
keywords = "Optimization",
keywords = "Quadratic membrane",
keywords = "Small deflections",
keywords = "Large deflections",
keywords = "Capacitive pressure sensor",
abstract = "Membrane structures are one of the most common elements in microsystems. In order to perform system simulations, behavioral models of their bending lines have to be developed. These models may also be used as a basis for parameter extractions, which is a crucial task in the development of microsystems. But parameter extractions can only be performed, if the models used include all of the most important physical effects. Hence the physical basis of these models has to be very profound.
Usually a distinction is made between small and large deflections [Engineering Mechanics Series, 2nd ed. (1959)] and only one of these cases is taken into consideration in today's behavioral models of membrane structures. Since some systems' range of operation includes both kinds of deflection, models are needed which take both cases into account. The paper presents the theoretical basis for this task. The solution is partially based on the results of [J. Microelectromech. Syst. 4 (4) (1995) 238] and the behavioral model only calls for one heuristic parameter that was introduced in [Int. Conf. Model. Simul. Microsyst. Puerto Rico, 1 (1999) 237]. All the other quantities are purely physical parameters. Evaluations of this model have been done using measured data of a capacitive pressure sensor. Finally design optimizations could be carried out in order to increase the sensor's sensitivity as much as possible."
}
@article{Miao200221,
title = "Design considerations in micromachined silicon microphones",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "21 - 28",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00100-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001008",
author = "Jianmin Miao and Rongming Lin and Longqing Chen and Quanbo Zou and Sin Yee Lim and Suan Hee Seah",
keywords = "MEMS",
keywords = "Microphones",
keywords = "Polysilicon",
keywords = "Deep reactive ion etching",
abstract = "We present and compare the different designs of micromachined silicon condenser microphones. The aim is to develop the microphones with high sensitivity and low fabrication cost. Slotted and corrugated diaphragms have been designed and fabricated in order to increase the mechanical sensitivity of microphones. At the same time, we developed the fabrication process for the low stress or stress-free multilayers polysilicon used as the microphone diaphragms. To increase the microphone chip density on one wafer and avoid the sticking problem during the wet release process, a new process design using deep reactive ion etching is proposed, which is available in our laboratory."
}
@article{Schneider200229,
title = "A modular approach for simulation-based optimization of MEMS",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "29 - 38",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00101-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100101X",
author = "Peter Schneider and André Schneider and Peter Schwarz",
keywords = "Optimization",
keywords = "Microsystems",
keywords = "Heterogeneous systems",
keywords = "MEMS",
keywords = "Modular optimization system",
keywords = "Distributed optimization via Internet",
keywords = "Multi-level simulation",
keywords = "Finite element method",
keywords = "System simulation",
abstract = "The importance of MEMS optimization concerning performance, power consumption, and reliability is increasing. A variety of specialized tools is available in the MEMS design flow. FEM tools (ANSYS, CFD-ACE+) are widely used on component level. System level simulations are carried out using simplified models and simulators like Saber or ELDO. There is a lack of simulator-independent optimization support. Only a few simulators offer optimization capabilities.
Our approach aims at a flexible combination of simulators and optimization algorithms by partitioning the optimization cycle into simulation, error calculation, optimization and model generation. This new method is translated into a modular optimization system named Moscito implemented in Java. Several optimization algorithms are available: methods without derivatives, methods using derivatives and stochastic approaches. Interfaces to simulators like ANSYS, Saber, MATLAB are implemented. Thus the optimization problem can be handled on different levels of model abstraction (FEM, ordinary differential equations, generalized networks, block diagrams, etc.). A graphical user interface supports control and visualization of the optimization. The modules of the optimization system are able to communicate via the Internet to allow a distributed, web-based optimization."
}
@article{Lin200239,
title = "Characterization and modeling of avalanche multiplication in HBTs",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "39 - 43",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00102-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001021",
author = "Fujiang Lin and Bo Chen and Tianshu Zhou and Ban Leong Ooi and Pang Shyan Kooi",
keywords = "Avalanche multiplication",
keywords = "Bipolar transistor modeling",
keywords = "Compact model",
keywords = "SiGe HBT",
keywords = "VBIC",
keywords = "Parameter extraction",
abstract = "The accurate modeling of weak avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high level injections."
}
@article{Lin200245,
title = "SiGe HBTs model converting technique from SGP to VBIC model",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "45 - 54",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00103-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001033",
author = "Fujiang Lin and Tianshu Zhou and Bo Chen and Ban Leong Ooi and Pang Shyan Kooi",
keywords = "Parameter extraction",
keywords = "Bipolar transistor modeling",
keywords = "Compact model",
keywords = "SiGe HBT",
keywords = "SGP",
keywords = "VBIC",
keywords = "Model conversion",
abstract = "A new parameter extraction methodology — local ratio evaluation is presented which is well suitable for converting one model to another. An example is given for VBIC model extraction by going through SPICE Gummel–Poon (SGP) model. It is based on the fact that VBIC model is a direct enhancement and extension of SGP model. First, the standard SGP model is extracted in the standard way. Next, SGP model parameters are directly converted to those in VBIC model. Local modifications are subsequently carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation."
}
@article{Ong200255,
title = "Steep retrograde indium channel profiling for high performance nMOSFETs device fabrication",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "55 - 60",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00104-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001045",
author = "S.Y. Ong and E.F. Chor and Y.K. Leung and James Lee and W.S. Li and Alex See and Lap Chan",
keywords = "Indium",
keywords = "Short channel effects",
keywords = "Reverse short channel effects",
keywords = "Steep retrograde channel profile",
abstract = "Integration issues involved in incorporating indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. The inclusion of Rapid Thermal Anneal step after NLDD implant (NLDD RTA) in the standard process is found to be crucial in achieving a Steep Retrograde Channel Profile (SRCP) for effective Short Channel Effects (SCE) and Reverse Short Channel Effects (RSCE) control. Alternative techniques such as boron pocket removal and NLDD dose reduction are also studied. Nevertheless, superiority of the NLDD RTA technique is shown in all aspects of device performance. This allows indium to be a more favorable dopant than boron for high performance nMOSFETs device fabrication."
}
@article{Heitzinger200261,
title = "An extensible TCAD optimization framework combining gradient based and genetic optimizers",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "61 - 68",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00105-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001057",
author = "Clemens Heitzinger and Siegfried Selberherr",
keywords = "TCAD",
keywords = "Optimization",
keywords = "Evolutionary computation",
keywords = "Genetic optimization",
keywords = "Gradient based optimization",
keywords = "Inverse modeling",
abstract = "The siesta framework is an extensible tool for optimization and inverse modeling of semiconductor devices including dynamic load balancing, for taking advantage of several, loosely connected workstations. Two gradient-based and two evolutionary computation optimizers are currently available through a uniform interface and can be combined at will. At a real world inverse modeling example, we demonstrate that evolutionary computation optimizers provide several advantages over gradient-based optimizers, due to the specific properties of the objective functions in TCAD applications. Furthermore, we shortly discuss some issues arising in inverse modeling and conclude with a comparison of gradient-based and evolutionary computation optimizers from a TCAD point of view."
}
@article{Marschner200269,
title = "A novel circuit concept for PSK-demodulation in passive telemetric systems",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "69 - 75",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00106-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001069",
author = "Claudia Marschner and Sven Rehfuss and Dagmar Peters and Hilmar Bolte and Rainer Laur",
keywords = "Telemetry",
keywords = "Bi-directional telemetry",
keywords = "PSK-demodulator",
abstract = "A PSK-demodulator for a bi-directional data transmission in passive telemetric microsystems is presented in this work. These systems, which use the telemetry link for energy and data transmission, are based on identification systems, which use ASK-modulation for both data transfer directions. This leads to problems with a bi-directional data transmission in sensor applications, where the power consumption is significantly higher than in identification systems. A system that uses a PSK to transfer data into the microsystem to improve the energy transfer during data transmission is presented. The key component of this system is a novel PSK-demodulator, which works without an internal oscillator and therefore no PLL is needed. The major advantages of the presented system are the self-adaptation to the carrier frequency and the independence of the demodulator of parameter drifts."
}
@article{Gisuthan200277,
title = "Pipelining flat CORDIC based trigonometric function generators",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "77 - 89",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00107-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001070",
author = "Bimal Gisuthan and Thambipillai Srikanthan",
keywords = "CORDIC",
keywords = "Pipelining",
keywords = "Trigonometric functions",
keywords = "Hyperbolic functions",
keywords = "Flat CORDIC",
abstract = "Despite further refinements of the CORDIC algorithm with the introduction of redundant arithmetic and higher radix CORDIC techniques, in terms of circuit latency and performance, the iterative nature remains to be the major bottleneck for further optimization. A technique known as flat CORDIC, in which the conventional X and Y recurrences are successively substituted to express the final vectors in terms of the initial vectors, can be used to eliminate the iterative process. In this paper, the techniques devised for the VLSI efficient implementation of a pipelined 16-bit flat CORDIC based sine–cosine generator are presented. Three possible schemes to pipeline the 16-bit flat CORDIC design have been presented to demonstrate the suitability of the proposed method to realize high throughput implementations. The 16-bit architecture has been synthesized with 0.35 μ CMOS process library using Synopsys. Finally, a detailed comparison with other major contributions show that the flat CORDIC based sine–cosine generators are, on average, 30% faster and occupy some 30% less silicon area."
}
@article{Wolf200291,
title = "Timing and power measurement in static software analysis",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "91 - 100",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00108-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001082",
author = "Fabian Wolf and Judita Kruse and Rolf Ernst",
keywords = "Power consumption",
keywords = "Caches",
keywords = "Software analysis",
abstract = "Evaluation boards are popular as prototyping platforms in embedded software development. They are often preferred over simulation to avoid modeling effort and simulation time as well as over complete hardware prototypes to reduce development cost. The paper presents the application of a commercial logic state analyzer for timed trace acquisition with instruction cycle accurate software power measurement on commercial evaluation kits. The results are applied in an instruction level software power analysis technique. Both approaches can be used for segment-wise architecture modeling in static software analysis approaches."
}
@article{ChantalG2002101,
title = "SU8 resist for low-cost X-ray patterning of high-resolution, high-aspect-ratio MEMS",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "101 - 105",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00109-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001094",
author = "Chantal G and Khan Malek",
keywords = "Ultra-thick photoresist",
keywords = "SU8",
keywords = "X-ray lithography",
keywords = "LIGA",
keywords = "MEMS",
keywords = "High-aspect-ratio",
abstract = "The use of ultrathick resist films creates a new set of lithographic challenges. The LIGA process, which combines X-ray lithography, electroplating and micromolding techniques is a major microsystem technology for manufacturing tall microstructures with high-aspect-ratio (ratio of height-to-width). This paper explores the potential of a negative-tone thick photoresist, SU8, as a faster X-ray resist. Three-hundred and fifty micrometer thick resist layers were patterned into microstructures of aspect-ratio as high as 50 using 1–10 keV X-rays from the CAMD synchrotron radiation facility. SU8 brings a dramatic gain in exposure time, particularly at large thickness, resulting in potentially large increase in throughput for LIGA."
}
@article{DavidJ2002107,
title = "Microsensor clusters",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "107 - 119",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00110-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001100",
author = "David J. and Nagel",
keywords = "Microelectromechanical systems",
keywords = "Microsensors",
keywords = "Microsensor clusters",
keywords = "Smart sensors",
keywords = "Distributed sensors",
keywords = "Networked sensors",
keywords = "Wireless sensor networks",
keywords = "Microcontrollers",
abstract = "The ready availability of MicroElectroMechanical Systems (MEMS) sensors and other microsensors makes it possible to use modern manufacturing technologies to produce affordable and highly functional groupings (clusters) of the small and capable sensors. They beneficially share computational, communication and power resources. Printed circuit boards a few centimeters on a side, populated with the sensors and other components by fast pick-and-place machines, can form the backbone of clusters for many applications. Uses include, but are not limited to: small weather stations; systems for analysis of the atmosphere and water; monitors of fluid and power distribution systems, machinery operation and the status of buildings, facilities and highway systems; and robots for a variety of applications, notably solar system exploration. The calibration of microsensors and the reliability of such sensors and clusters containing them, are issues that require additional research. Microsensor clusters offer near term benefits that will not soon be supplanted by the ‘systems on a chip’ currently under development."
}
@article{Bhansali2002121,
title = "Probing human skin as an information-rich smart biological interface using MEMS sensors",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "121 - 127",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00111-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001112",
author = "Shekhar Bhansali and H. Thurman Henderson and Steven B. Hoath",
keywords = "Skin",
keywords = "Microsensor",
keywords = "Coherent porous Si",
keywords = "Microsystem",
keywords = "Confocal microscopy",
abstract = "This paper describes our approach of studying the dynamic, information rich, molecular structure of the ultimate smart interface — human skin — by coupling the advances in biological, microsystems, and information technology. The outer layer of human skin, the stratum corneum is a biologically complex thin film that has unique molecular mechanisms that allow it to function simultaneously as a structural and as a perceptual interface. It is continuously ‘sampled’ by the brain in terms of visual, tactile, and olfactory cues. It interfaces the organism with its environment and has unique micro/nano architecture from an engineering standpoint, e.g. it simultaneously retains and uses water to plasticize the membrane for flexibility.
This paper focuses on the development of a sampling interface and MEMS components for a freestanding, multifunctional, multimode, microfluidics-based sensor system for real time physiological monitoring. This research will enable us to gain an insight into the functioning of the human at a fundamental level (from cellular to population) that has not been possible before."
}
@article{Sarros2002129,
title = "Investigation of cylindrical and conical electrostatic wobble micromotors",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "129 - 140",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00112-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001124",
author = "Tony Sarros and Eng C. Chew and Simon Crase and Boon K. Tay and Wen L. Soong",
keywords = "Micromotors",
keywords = "Electrostatic",
keywords = "Harmonic",
keywords = "Wobble",
keywords = "Cylindrical",
keywords = "Conical",
keywords = "Torque measurement",
abstract = "This paper describes the analysis, design, construction and testing of two electrostatic wobble micromotors: a conventional cylindrical design and a new conical design. Both designs have stators with eight segments. The cylindrical micromotor rotor is about 4 mm in diameter and 20 mm long while the conical rotor has a maximum diameter of about 10 mm and is 12 mm long. The advantage of the new conical design is that it eliminates the need for a long pivot bearing and hence substantially reduces the size of the motor. The micromotors were tested under open-loop control at an applied voltage of up to 650 V."
}
@article{AlSarawi2002141,
title = "Differential oversampling data converters in SEED technology",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "141 - 151",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00113-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001136",
author = "S.F. Al-Sarawi and P.B. Atanackovic and W. Marwood and B.A. Clare and K.A. Corbett and K.J. Grant and J. Munch",
keywords = "Optoelectronic data converter",
keywords = "Very high speed data converter",
keywords = "Oversampling data converter",
keywords = "Photonic data converter",
keywords = "Sigma–delta modulators",
abstract = "Differential architectures for both first order error diffusion and first order sigma–delta modulators are presented in this paper. Techniques required to transform single-ended architectures to differential architectures are discussed which are suitable for implementation in both p–i–n and n–i–n SEED technologies. Descriptions of common SEED circuit modules, together with SPICE behavioural simulations are also presented. A feature of the architectures presented is that they can be fully integrated into a single substrate using MEMS technology. This can be done by incorporating integrated optical waveguides together with MMIC technology. The goal of this work is a fully integrated differential optical oversampling modulator with extremely high resolution and linearity."
}
@article{Hall2002153,
title = "Design and simulation of a high efficiency Rotman lens for mm-wave collision avoidance sensor",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "153 - 159",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00114-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001148",
author = "Leonard Hall and Hedley Hansen and Derek Abbott",
keywords = "Smart antenna",
keywords = "Rotman lens",
keywords = "Beamforming",
keywords = "microantenna arrays",
abstract = "Multi-beam approaches using beamforming antenna array architectures have been identified as one solution for overcoming the limited fields-of-view provided by highly directional mm-wave sensors. They are also ideal front end systems for collision avoidance devices. Rotman lenses offer a compact, rugged and reliable alternative to electronically scanned antenna technologies but architectures that operate at frequencies <20 GHz perform poorly at higher frequencies on account of greater losses and dispersion. This paper outlines the design process for providing Rotman-based lenses, examining various levels of simulation that are needed for designs that function at K and W-band frequencies. The impact of using microstrip structures is demonstrated. A key advantage of our approach is that it is compatible with monolithic fabrication, leading the way towards smart collision avoidance sensors."
}
@article{D2002161,
title = "Optical MTF and quantum efficiency analysis in a finite slab",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "161 - 170",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00115-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100115X",
author = "D and Abbott",
keywords = "Internal quantum efficiency",
keywords = "Modulation transfer function",
keywords = "Optical image sensors",
keywords = "Optical smart sensors",
keywords = "Photodetection",
abstract = "The formula for quantum efficiency in a semiconducting material was first derived by Seib in 1974 for a semi-infinite slab of semiconducting material. Seib's first-order analysis considered the effect of absorption coefficient, minority carrier diffusion length and depletion width. However, for modern devices on epitaxial material, smart sensors, quantum well devices, etc., the semi-infinite slab approximation breaks down. Here, we present the derivation for a finite slab that considers the thickness of the layer as a fourth parameter. We present a case study analyzing quantum efficiency, and hence MTF, in epitaxial silicon versus bulk gallium arsenide."
}
@article{Ng2002171,
title = "Introduction to solid-state quantum computation for engineers",
journal = "Microelectronics Journal",
volume = "33",
number = "1–2",
pages = "171 - 177",
year = "2002",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00116-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001161",
author = "Joseph Ng and Derek Abbott",
keywords = "Smart electronics",
keywords = "Smart structures and materials",
keywords = "Solid state quantum computation",
abstract = "This review is an introduction to solid state quantum computation and its applications for engineers with little or no quantum physics background. Some current classical limits of computation are briefly described, and examples of quantum algorithms are presented to show why quantum computation may be a way of overcoming these limitations. In this review, we have focused on one quantum computer proposal, the Kane proposal. It is a solid-state proposal in silicon doped with 31P atoms. However, significant technological advances will be required in smart electronics, nanotechnology and solid state devices if we are to see a useful solid state quantum computer."
}
@article{Jogi2001925,
title = "A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "925 - 930",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00088-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100088X",
author = "Jyotika Jogi and Mridula Gupta and R.S. Gupta",
keywords = "LMHEMT",
keywords = "Low field mobility",
keywords = "Sheet carrier concentration",
keywords = "Transconductance",
keywords = "Cut-off frequency",
abstract = "Extrinsic lattice matched InAlAs/InGaAs/InP HEMT model, incorporating the parasitic source and drain resistance, for very high frequency application is developed. The current voltage characteristics and the transconductance have been evaluated and the influence of carrier concentration dependent mobility on frequency has also been analyzed. A cut-off frequency of 135 GHz is obtained."
}
@article{Messer2001931,
title = "Optimal wavelet denoising for phonocardiograms",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "931 - 941",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00095-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000957",
author = "Sheila R Messer and John Agzarian and Derek Abbott",
keywords = "Wavelets",
keywords = "Denoising",
keywords = "Phonocardiogram",
keywords = "Heart sound analysis",
keywords = "Heartbeat analysis",
keywords = "Hilbert transform",
abstract = "Phonocardiograms (PCGs), recordings of heart sounds, have many advantages over traditional auscultation in that they may be replayed and analysed for spectral and frequency information. PCG is not a widely used diagnostic tool as it could be. One of the major problems with PCG is noise corruption. Many sources of noise may pollute a PCG including foetal breath sounds if the subject is pregnant, lung and breath sounds, environmental noise and noise from contact between the recording device and the skin. An electronic stethoscope is used to record heart sounds and the problem of extracting noise from the signal is addressed via the use of wavelets and averaging. Using the discrete wavelet transform, the signal is decomposed. Due to the efficient decomposition of heart signals, their wavelet coefficients tend to be much larger than those due to noise. Thus, coefficients below a certain level are regarded as noise and are thresholded out. The signal can then be reconstructed without significant loss of information in the signal content. The questions that this study attempts to answer are which wavelet families, levels of decomposition, and thresholding techniques best remove the noise in a PCG. The use of averaging in combination with wavelet denoising is also addressed. Possible applications of the Hilbert transform to heart sound analysis are discussed."
}
@article{Ferguson2001943,
title = "De-noising techniques for terahertz responses of biological samples",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "943 - 953",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00093-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000933",
author = "Bradley Ferguson and Derek Abbott",
keywords = "Terahertz",
keywords = "T-ray imaging",
keywords = "Wavelet de-noising",
keywords = "Wiener deconvolution",
abstract = "Signal processing techniques may be used to improve the speed, resolution and noise robustness of pulsed terahertz (T-ray) imaging systems. Such systems have a wide range of applications and much recent interest has focussed on several promising biomedical fields. There are a number of significant challenges to be overcome before a commercial biomedical terahertz system can be realised. Recent research is focussed on the implementation of a high speed, compact and portable T-ray imaging system. This system will draw heavily on MOEMS technology. One of the major stages in the development of such a system is the design of efficient software algorithms to perform signal recognition and imaging operations in real time.
This paper considers a number of signal processing techniques suitable for de-noising and extracting information from the data obtained in a terahertz pulse imaging system. Two main de-noising techniques are considered. Wavelet de-noising and Wiener deconvolution algorithms are applied to the terahertz responses of biological samples including Spanish Serrano ham and an oak leaf."
}
@article{Kadleı́ková2001955,
title = "Raman spectra of synthetic sapphire",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "955 - 958",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00087-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000878",
author = "M. Kadleı́ková and J. Breza and M. Veselý",
keywords = "Sapphire",
keywords = "Raman spectroscopy",
abstract = "We have studied two samples of synthetic sapphire. Sample 1 was used as a window in a cryostat and was subjected to liquid nitrogen temperature for a long time (two years). Sample 2 was stored at room temperature. Under identical conditions, three types of Raman spectra were measured on Sample 1 in the wave number range 100–800 cm−1. In the spectra from the central part of the sample, seven bands were observed, which are in good agreement with a spectrum of natural sapphire. In the spectra off the center, a subtle band was observed at a wave number of 724.6 cm−1 which was related to the distribution of point defects. On the boundary of the sample, just a fluorescent background was measured. The measured Raman spectra resemble the spectra of γ-Al2O3 phase. On Sample 2, the spectra from the border were similar to those from the middle of the sample. The observed results indicate possible conversion of α-Al2O3 into γ-Al2O3 due to prolonged exposure of synthetic sapphire to low temperatures."
}
@article{Harmer2001959,
title = "Motion detection and stochastic resonance in noisy environments",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "959 - 967",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00094-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000945",
author = "G.P. Harmer and D. Abbott",
keywords = "Smart sensors",
keywords = "Motion detection",
keywords = "Collision avoidance",
keywords = "Insect vision",
keywords = "Stochastic resonance",
keywords = "Noisy sensory neural models",
keywords = "Noise",
abstract = "Several motion detection schemes are considered and their responses to noisy signals investigated. The schemes include the Reichardt correlation detector, shunting inhibition and the Horridge template model. These schemes are directionally selective and independent of the direction of change in contrast. They function by using spatial information and comparing it at successive time intervals. A rudimentary noise analysis is performed on the Reichardt and inhibition detectors to compare their natural robustness against noise. Using these detectors, stochastic resonance (SR) is applied, which is characterised by an improvement in response when noise is added to the input signal. It is found that the performance of the detectors degrades with the addition of noise. Employing Stocks' suprathreshold SR, an improvement can be gained when considering a network of detectors. Furthermore, when using an incorrect threshold setting for the template model, SR can be displayed."
}
@article{He2001969,
title = "Linearly varying surface-implanted n− layer used for improving trade-off between breakdown voltage and on-resistance of RESURF LDMOS transistor",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "969 - 971",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00084-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000842",
author = "Jin He and Xing Zhang and Yang Yuan Wang",
keywords = "RESURF LDMOS",
keywords = "Power transistor",
keywords = "Linearly varying surface-implanted doped (LVD) n− layer",
abstract = "A new RESURF LDMOS transistor using a linearly varying surface-implanted doped (LVD) n− layer is reported. Detailed numerical simulations demonstrate the characteristics of this device incorporating an LVD n− layer and indicate an enhancement on the performance in comparison to an optimal conventional structure with an uniform epi-layer concentration."
}
@article{Koh2001973,
title = "Factors influencing open circuit decomposition behavior of sulfur-containing additive component used in Cu plating for advanced interconnect metallization",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "973 - 977",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00085-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000854",
author = "L.T Koh and G.Z You and S.Y Lim and C.Y Li and P.D Foo",
keywords = "Copper plating",
keywords = "Wafer",
keywords = "Additive",
keywords = "Cyclic voltammetric stripping",
keywords = "Mercapto species",
keywords = "Polypropylene glycol",
abstract = "Accelerated decomposition of organic additives during open circuit condition was observed only when both copper wire and oxygen are present in the copper sulfate solution. The data suggest that the accelerating mercapto species could form a complex with cuprous ions from copper anode in the plating solution. The copper complexes formed then undergo oxidation reaction and lose its original electrochemical activity by introducing byproducts. Adsorption behavior of various chemical components in the plating solution on the copper anode surface was found to have a significant influence on the sulfur-containing brightening agent degradation rate. The degradation mechanisms attributed to the interactions among different chemical components are also addressed and discussed."
}
@article{Gorev2001979,
title = "Effect of backgating on the field distribution in planar thin-film GaAs structures",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "979 - 982",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00083-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000830",
author = "Nikolai B. Gorev and Inna F. Kodzhespirova and Yury A. Kovalenko and Evgeny N. Privalov and Eugenio F. Prokhorov",
keywords = "Backgating",
keywords = "GaAs structures",
keywords = "Negative differential mobility",
abstract = "The distribution of the electric field in planar film–substrate GaAs structures under backgating is considered. It is shown that backgating can make the film exhibit a long-length region of a low-gradient electric field exceeding the threshold of N-type negative differential mobility, the magnitude of negative differential mobility in this region being high enough. At values of the film doping density and film thickness typical of GaAs transferred-electron devices, this region can be as long as several tens of micrometers. The underlying physical mechanism is discussed."
}
@article{Bose2001983,
title = "A complete analytical model of GaN MESFET for microwave frequency applications",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "983 - 990",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00062-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000623",
author = "S. Bose and Adarsh and A. Kumar and Simrata and M. Gupta and R.S. Gupta",
keywords = "GaN",
keywords = "MESFET",
keywords = "Analytical modelling",
abstract = "A simple physics-based analytical model for a non-self-aligned GaN MESFET suitable for microwave frequency applications is presented. The model includes the effect of parasitic source/drain resistances and the gate length modulation. The model is then extended to evaluate I–V and C–V characteristics, transconductance, cut-off frequency, transit time, RC time constant, optimum noise figure and maximum power density. The transconductance of about 21 mS/mm is obtained for GaN MESFET using the present theory in comparison to 23 mS/mm of the reported data. The cut-off frequency of more than 1 GHz, optimum noise figure of 6 dB and maximum output power density of more than 1 W/mm are predicted."
}
@article{Berviller2001991,
title = "Design of a selective digital filter using the decimation technique",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "991 - 994",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00086-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000866",
author = "H Berviller and A Dandache and F Monteiro and B Lepley",
keywords = "IF digital filters",
keywords = "Decimation",
keywords = "Radio frequency stages",
keywords = "Digital audio-visual council",
abstract = "The implementation of an Intermediate Frequency (IF) filter in Digital Audio-VIsual Council (DAVIC) compliant modems is a particularly complex task. In previous works, we compared the performance of different designs (analog and digital) for the radio-frequency stage in a modem application. These designs have been evaluated for a particular case defined in the DAVIC recommendation. The design limits that were pointed out are mainly due, in the digital approach, to the high frequencies at which the IF stage must operate, and to the variation of the sampling frequency.
In this paper, we propose a digital implementation of the IF filter based on the decimation technique. The evaluation of the performance has been performed using the PTOLEMY software from the Berkeley University."
}
@article{Matoussi2001995,
title = "Porous silicon as an intermediate buffer layer for GaN growth on (100) Si",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "995 - 998",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00061-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000611",
author = "A. Matoussi and T. Boufaden and A. Missaoui and S. Guermazi and B. Bessaı̈s and Y. Mlik and B. El Jani",
keywords = "III–V nitrides",
keywords = "Metalorganic vapor phase epitaxy",
keywords = "Porous silicon",
abstract = "We report preliminary results on the growth of GaN on (100) Si substrate using porous silicon (PS) as an intermediate buffer layer. The growth was in situ monitored by laser beam reflectivity. Analysis of the evolution of the reflectivity signal indicates a change from relatively flat surface to rough one as the growth temperature (Tg) is increased. At a temperature of about 1050°C, the growth rate is very low and the reflected signal intensity is constant. When the growth temperature is varied, no drastic change of the porosity of the intermediate layer was detected. Scanning electron microscope (SEM) observations of the GaN/SP/Si structure revealed a good surface coverage at 500°C. When Tg increases, the structure morphology changes to columnar like structure at 600°C, and well-developed little crystallites with no preferential orientation appear at 800°C. These observations agree well with the X-ray diffraction (XRD) analysis. A preferential hexagonal growth is obtained at low growth temperature, while cubic phase begin to appear at elevated temperatures."
}
@article{Kim2001999,
title = "On-line integrity monitoring of microprocessor control logic",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "999 - 1007",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00090-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000908",
author = "Seongwoo Kim and Arun K. Somani",
keywords = "Fault tolerant microprocessor",
keywords = "Soft error",
keywords = "Concurrent integrity checking",
keywords = "Fault injection simulation",
keywords = "Fault sensitivity",
abstract = "This paper presents a low-cost reliability enhancement strategy for the microprocessor's control logic, which usually remains unprotected against soft errors due to great overhead. We classify control signals into static and dynamic control depending on their changeability. For static control, signals used in pipeline stages are integrated into a signature and verified with a cached check code at commit time. The concept of caching signatures is introduced. Dynamic control is examined on the spot in which the signals are created using component-level duplication. Fault injection simulations on a SimR2K processor demonstrate that our schemes can achieve more than 99% coverage on average with a very small hardware addition."
}
@article{Moisiadis20011009,
title = "High performance level restoration circuits",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1009 - 1016",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00091-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100091X",
author = "Yiannis Moisiadis and Ilias Bouras and Angela Arapoyanni",
keywords = "Low power",
keywords = "Low-Swing",
keywords = "Level restoration circuits",
keywords = "Back-bias",
keywords = "Bootstrapping",
abstract = "Three high performance level restoration circuits are proposed, which outperform the existing level restoration circuits with cross-coupled PMOS, in terms of power dissipation and delay. The first configuration employs a back-bias scheme in order to eliminate the stand-by leakage caused by the low-swing input. The second one adopts a bootstrapping technique, in order to restore the low-swing signal, without dc power consumption. Finally, a level restoration circuit is proposed, based on the generation of a narrow zero-pulse, for properly controlling the output PMOS device. The presented level restoration circuits can be implemented in standard CMOS technologies. By simulating the proposed circuits on a low-swing interconnect scheme, a 60% power savings have been observed over the conventional full-swing case."
}
@article{delaRosa20011017,
title = "Switched-Current bandpass Sigma–Delta modulators for AM digital radio receivers",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1017 - 1033",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00082-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000829",
author = "José M. de la Rosa and Belén Pérez-Verdú and Fernando Medeiro and Rocio del Rı́o and Angel Rodrı́guez-Vázquez",
keywords = "Analog-to-digital conversion",
keywords = "Bandpass Sigma–Delta modulation",
keywords = "Switched-current circuits",
abstract = "This paper discusses the use of switched-current (SI) circuits to design Band-Pass ΣΔ Modulators (BP-ΣΔMs) suitable for AM digital radio receivers. First of all, the paper briefly outlines the concept and principles of BP-ΣΔMs, and introduces two modulator architectures which are obtained by applying a lowpass-to-bandpass transformation (i.e. z−1→−z−2) to a first-order and a second-order Low-Pass ΣΔ Modulator (LP-ΣΔM), respectively. The resulting BP-ΣΔMs, respectively of second-order and of fourth-order, are then used as case studies for SI circuit implementation. Systematic analysis of the errors associated to SI circuits is carried out and models are presented to evaluate their incidence on the performance of BP-ΣΔMs; the significance of the different errors is illustrated via the two selected case studies. Fully-differential regulated-folded cascode SI memory cells are chosen to attenuate these errors. Based on the proposed error models, optimization is carried out to fulfill AM radio requirements in practical modulator implementations. Two IC prototypes have been fabricated in a CMOS 0.8 μm technology, and measured, to validate the presented design methodology. One of these prototypes uses the fourth-order architecture to digitize AM signals, and features 10.5-bit resolution with 60 mW power consumption from a 5 V supply voltage. The other uses the second-order architecture and features 8-bit with 42 mW in the commercial AM band, from 540 to 1600 kHz. Experimental results show correct noise-shaping for sampling frequencies up to 16 MHz, which means a significant operation frequency enhancement as compared to previously reported SI ΣΔ Modulators."
}
@article{Fanucci20011035,
title = "Parametrized and reusable VLSI macro cells for the low-power realization of 2-D discrete-cosine-transform",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1035 - 1045",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00092-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000921",
author = "Luca Fanucci and Roberto Saletti and Sergio Saponara",
keywords = "Very large scale integration architectures",
keywords = "Very high speed integrated circuits hardware description language",
keywords = "Intellectual property design reuse",
keywords = "Low power circuits",
keywords = "Image processing",
abstract = "The problem of an efficient VLSI realization of the 2-D discrete-cosine-transform and its inverse is addressed in this paper. Two circuits implementing both functions are discussed and characterized from the high-level architectural choices down to the gate-level synthesis on different standard-cell target technologies. The circuits are designed as parametric intellectual property (IP) cells according to a design reuse policy that allows the user to select the most convenient solution for the considered application. Synthesis results show that the circuits are suitable for real time processing of various image formats adopted in H.263/MPEG compression standards. Power consumption reduction methods (clock gating, switching activity reduction) are used according to the statistics of the input signals to reduce the dissipated power. The effects of supply voltage scaling and its consequence on circuit performance are examined in detail, as well as the use of different target technologies. Finally, a comparison with dedicated full-custom low-power circuits presented in the literature show that these IP cells stand for flexibility, parametrization and reusability, still maintaining comparable power consumption and area occupation."
}
@article{He20011047,
title = "Erratum to “Quasi-2D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor” [Microelectronics Journal, Vol. 32, No. 8, pp. 655–663 (2001)]",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1047 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00121-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001215",
author = "Jin He and Xing Zhang"
}
@article{D20011049,
title = "Structured electronic design — high-performance harmonic oscillators and bandgap references: Arie van Staveren, Chris J.M. Verhoeven, Arthur H.M. van Roermund; Kluwer Academic Publishers, 101 Philip Drive, Assinipi Park, Norwell, MAS, 02061 USA, 284 pages, ISBN 0-7923-7283-2, 120$",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1049 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00117-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001173",
author = "D and Krstić"
}
@article{Slobodanka20011049,
title = "Operating systems: a systematic view: William S. Davis and T. M. Rajkumar, 5th ed.; Addison-Wesley Longman Inc., 2001, an imprint of Pearson Education, 2001, 605 pages, hardback, ISBN 0-201-61257-7-X, ,",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1049 - 1050",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00118-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001185",
author = "Slobodanka and Djordjević-kajan"
}
@article{ZoricaB20011050,
title = "Principles of Mobile Communication: Gordon L. Stuber; Second Edition; Kluwer Academic Publishers, Boston, 2001, 752 pages, ISBN 0-7923-7998-5",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1050 - 1051",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00119-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001197",
author = "Zorica B. and Nikolic"
}
@article{DušanB20011052,
title = "Wireless Multimedia Network Technologies: Rajamani Ganesh, Kaveh Pahlavan, Zoran Zvonar (Eds.); Kluwer Academic Publishers, Boston, 2000, XII+373 pages, ISBN 0-7923-8633-7",
journal = "Microelectronics Journal",
volume = "32",
number = "12",
pages = "1052 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00120-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201001203",
author = "Dušan B and Drajić"
}
@article{Székely2001795,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "795 - 796",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00064-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000647",
author = "V. Székely and M. Rencz"
}
@article{Joshi2001797,
title = "Challenges in thermal modeling of electronics at the system level: summary of panel held at the Therminic 2000",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "797 - 800",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00065-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000659",
author = "Y Joshi and M Baelmans and D Copeland and C.J.M Lasance and J Parry and J Rantala",
keywords = "Thermal simulations",
keywords = "Computational modeling",
keywords = "Thermal modeling",
abstract = "The rapidly shrinking times-to-market for modern electronic products are requiring high fidelity system level thermal simulations. Electronic products are characterized by diverse length scales of interest, multiple coupled modes of thermal transport, and presence of multiple flow regimes. Numerous materials and interfaces are utilized in these systems, often displaying highly anisotropic behavior. Thermal management devices such as fans and heat sinks also result in unique challenges in system level thermal modeling. While a number of advances in computational modeling have been made in the past decade, key challenges remain before systems level simulations can be considered truly predictive and can be performed in reasonable time. At the Therminic 2000, a panel was held to identify the key challenges facing the thermal community in the area of system level simulations. Participants from industry and academia focused on gaps in the state-of-the-art in system level thermal/fluidic modeling, and possible ways of addressing these."
}
@article{Gerstenmaier2001801,
title = "Time dependent temperature fields calculated using eigenfunctions and eigenvalues of the heat conduction equation",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "801 - 808",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00066-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000660",
author = "Y.C. Gerstenmaier and G. Wachutka",
keywords = "Heat conduction equation",
keywords = "Thermal modeling",
keywords = "Eigenfunctions",
abstract = "The time dependent solution of the heat conduction equation is represented by expanding T in terms of eigenfunctions and eigenvalues (=inverse time constants). Once these are known, the time development of T can be computed readily for arbitrary heat sources. A method is presented for computing eigenfunctions and eigenvalues for a multilayer structure, where all layers have the same lateral extension and differ vertically by thickness and material parameters. The distribution of the heat sources may be chosen at will. Examples will be given for the temperature evolution calculated for the time dependent heat distribution representing multichip modules in power electronics applications."
}
@article{Franke2001809,
title = "Thermal modelling of semiconductor packages",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "809 - 816",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00067-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000672",
author = "T Franke and U Froehler",
keywords = "Compact modelling",
keywords = "Thermal simulation",
keywords = "Semiconductor packages",
abstract = "This paper presents an improved approach for thermal characterization and simulation of semiconductor packages. The model can significantly reduce the simulation efforts for the design of complex technical thermal systems. It will be shown that the principle of superposition can be used to overcome the problems of thermal resistance narrowings. As the model structure implements a biunique mapping between a special set of border conditions and its parameters, a simple characterization procedure can be applied and the accuracy of the model is found to be independent of the boundary conditions."
}
@article{Codecasa2001817,
title = "Thermal networks for electro-thermal analysis of power devices",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "817 - 822",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00068-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000684",
author = "Lorenzo Codecasa and Dario D'Amore and Paolo Maffezzoni",
keywords = "Electro-thermal modeling and simulation",
keywords = "Thermal networks",
keywords = "Power devices",
abstract = "This work presents a derivation of the equivalent thermal network associated to the distributed heat diffusion process which takes place in an electrical circuit. Precise definition of temperature and dissipated power density for the elementary electrical element are presented. It is shown that these definitions lead to an equivalent thermal network that preserves the physical properties of the original distributed phenomenon. Using these results an accurate electro-thermal network model of a power DMOS is derived."
}
@article{Pesare2001823,
title = "Optimized electrothermal design of integrated devices through the solution to the non-linear 3-D heat flow equation",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "823 - 831",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00069-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000696",
author = "Marcello Pesare and Agostino Giorgio and Anna Gina Perri",
keywords = "Integrated devices",
keywords = "Electro-thermal modelling",
keywords = "Thermal design",
abstract = "In this paper, an optimized electrothermal design of integrated devices through the solution to the non-linear 3-D heat equation is presented. The thermal solution has been achieved by the Kirchhoff transform and the 2-D Fourier transform. The electrothermal feedback has been implemented by calculating the device current at the actual channel temperature. A multiple layer structure approximating the effect of the package has been considered as spatial domain in which the heat equation has been solved."
}
@article{Vı́zváry2001833,
title = "Thermomechanical analysis of hotplates by FEM",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "833 - 837",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00070-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000702",
author = "Zs. Vı́zváry and P. Fürjes and I. Bársony",
keywords = "Finite element method",
keywords = "Gas sensors",
keywords = "Thermomechanical analysis",
abstract = "This paper deals with the finite element model for the three-dimensional analysis of thermally isolated hotplates. These hotplates can be used as gas sensors. Our calculations result in the temperature distribution, the stress and displacement field. The stress and displacement fields are calculated from the thermal results (coupled analysis). Calculations were made in different cases of boundary conditions. The results were discussed with respect to the initial experimental findings. The problem is very difficult, hence the present results are qualitative and further examination is needed."
}
@article{Driessens2001839,
title = "Parametric compact models for the 72-pins polymer stud grid array™",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "839 - 846",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00071-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000714",
author = "Evelien Driessens and Sofie Van Dooren and Bart Vandevelde and Dominiek Degryse and Eric Beyne and Marcel Heerman and Jef Van Puymbroeck",
keywords = "Compact modeling",
keywords = "Polymer stud grid array (PSGA)",
keywords = "Thermal characterization",
keywords = "Thermal performance",
keywords = "Thermal resistance",
keywords = "Response surface model equations (RSM)",
abstract = "A compact model or thermal resistor network of a 72-pins polymer stud grid array (PSGA) assembly is presented. A general thermal network is simplified to a compact model with seven resistors. Secondly, the effect of the chip dimensions on the different thermal resistors is investigated. Thirdly, the compact models are synthesized in a response surface model (RSM). Any customer can then calculate the compact model for his specific application by filling in the geometry properties of the package in the RSM-equations and calculating the maximal temperature in the assembly."
}
@article{Sabry2001847,
title = "A lumped transient thermal model for self-heating in MOSFETs",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "847 - 853",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00072-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000726",
author = "M.N. Sabry and W. Fikry and Kh. Abdel Salam and M.M. Awad and A.E. Nasser",
keywords = "MOSFET",
keywords = "Thermal modeling",
keywords = "Self-heating",
abstract = "Both static and dynamic effects related to self-heating in MOSFETs (metal-oxide-silicon field effect transistors) are studied in order to construct an adequate compact thermal model. An available 2D electrical device simulator in addition to a simple 2D finite difference code for the heat equation are used as analysis tools. These tools are used both to justify the proposed model topology as well as to extract model parameters. Both static and dynamic effects predicted by the model are compared with existing experimental results."
}
@article{Szczesniak2001855,
title = "Influence of high-level synthesis on average and peak temperatures of CMOS circuits",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "855 - 862",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00073-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000738",
author = "Wladyslaw Szczesniak and Burkart Voss and Marc Theisen and Juergen Becker and Manfred Glesner",
keywords = "Reduction of power dissipation in CMOS circuits",
keywords = "Low power design",
keywords = "Reduction of average and peak temperatures of VLSI CMOS circuits",
abstract = "The aim of this paper is introducing a new modified high-level synthesis (HLS) technique resulting in reduction of the power dissipation in CMOS circuits leading to lowering the peak and the average temperature of the designed chip. The presented approach enables us designing contemporary electronic systems with reduction of the peak and average power consumption, so the reliability of the system can be improved. In the present method, the initial HLS is performed by the ASAP algorithm [The Synthesis Approach to Digital System Design, 1992]. In the next stage, acceptable increase of the toggling time of chosen functional units (without exceeding the system throughput — the latency is constant) leads to the possibility of decreasing their supply voltages. These chosen functional units are determined by the inserting idle operations with interchanging (IIOI) algorithm. This approach leads to decreasing the power dissipated in the chosen functional units and finally their peak and average temperature is lowered."
}
@article{Huang2001863,
title = "Fuzzy thermal modeling for MCM placement",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "863 - 868",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00074-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100074X",
author = "Yu-Jung Huang and Shen-Li Fu and Sun-Lon Jen and Mei-hui Guo",
keywords = "Multichip module",
keywords = "Placement",
keywords = "Fuzzy",
abstract = "This paper introduces a fuzzy analytical model for the optimal component placement of the power dissipating chips on a multichip module substrate. Our methodology considers multiobjective component placement based on thermal reliability as well as routing length criteria. The objective of the coupled placement methodology is to enhance the performance and reliability of the multichip module system by obtaining an optimal cost during multichip module placement. Case studies of the coupled placement are presented. In addition, the thermal distribution of the coupled placement results is simulated using the finite element method."
}
@article{MiribelCatalà2001869,
title = "MOSFET-based temperature sensor for standard BCD smart power technology",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "869 - 873",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00075-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000751",
author = "P. Miribel-Català and E. Montané and S.A. Bota and M. Puig-Vidal and J. Samitier",
keywords = "Temperature sensors",
keywords = "Smart power",
keywords = "CMOS compatible temperature sensor",
abstract = "Two on-chip temperature sensors for smart power BCD technology were compared. Temperature sensors based on bipolar transistors failed when DMOS power transistors were working under AC conditions because of substrate-coupled effects. An alternative MOSFET-based temperature sensor derived from a supply-independent CMOS bias source may overcome the problems associated with BCD technology."
}
@article{Chiueh2001875,
title = "A programmable thermal management interface circuit for PowerPC systems",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "875 - 881",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00076-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000763",
author = "Herming Chiueh and Jeffrey Draper and John Choma Jr.",
keywords = "Thermal management",
keywords = "Interface circuitry",
keywords = "Temperature monitoring",
abstract = "A programmable thermal management interface circuit for PowerPC systems has been designed, implemented, and tested for the Integrated Thermal Management (ITEM) System [1]. Instead of worst-case design, the ITEM system approach is to target nominal power dissipation and have the system actively monitor its thermal activity and control cooling mechanisms to ensure operation within specification. Using a suitable combination of hardware and software, the interface design yields intricate control and optimal management with little system overhead and minimum hardware requirements, as well as provides the flexibility to support different management algorithms. This interface circuit was fabricated in the HP 0.5 μm single-poly 3-metal process through MOSIS."
}
@article{StortiGajani2001883,
title = "Exploiting electrothermal oscillations for identifying MOSFET thermal parameters",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "883 - 889",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00077-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000775",
author = "Giancarlo Storti-Gajani and Amedeo Premoli and Angelo Brambilla",
keywords = "Electrothermal oscillations",
keywords = "MOSFET circuits",
keywords = "Nonlinear dynamics",
keywords = "Thermal parameters identification",
abstract = "Electrothermal oscillations in electronic circuits are in general regarded as parasitic dynamic phenomena. This paper shows how these phenomena may be exploited to identify the value of thermal resistance and capacitance of the RC network modelling heat diffusion. Measurement of the period of oscillations and bifurcation analysis of the stability of the equilibrium point are two approaches that may possibly lead to a reasonable estimate of these parameters. In this paper, we present both methods applied to two specific MOSFET circuits. In particular, the oscillation period of a current-mirror circuit and bifurcation analysis of a simple one-MOSFET circuit are analysed in detail. For the bifurcation analysis approach, theory and experimental results are successfully compared to simulation in order to validate the proposed model."
}
@article{Claeys2001891,
title = "Laser probes for the thermal and thermomechanical characterisation of microelectronic devices",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "891 - 898",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00078-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000787",
author = "Wilfrid Claeys and Stefan Dilhaire and Sébastien Jorez and Luis-David Patiño-Lopez",
keywords = "CCD camera",
keywords = "Laser probing method",
keywords = "ESPi",
keywords = "Shearography",
keywords = "Thermal testing",
abstract = "This paper presents a review of some of the recent works that we have done on thermal characterisation of running electronic devices by laser probing. Both the single point probing and the surface imaging methodologies are considered. Besides temperature mapping, laser point probing allows fault detection in integrated circuits. Electronic speckle pattern interferometry and shearography metholologies are presented, and examples of images of running power devices and this relation to the underlying thermomechanical stress are shown."
}
@article{Dilhaire2001899,
title = "Laser diode light efficiency determination by thermoreflectance microscopy",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "899 - 901",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00079-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000799",
author = "Stefan Dilhaire and Sebastien Jorez and Luis-David Patiño-Lopez and Wilfrid Claeys and Emmanuel Schaub",
keywords = "Laser diode",
keywords = "Thermoreflectance",
keywords = "Light absorption",
keywords = "COFD",
abstract = "In this paper, we present the thermoreflectance measurements done on 980 nm wavelength laser diodes. We determine the light output power for a given electric power input by using the energy conservation law."
}
@article{Maliński2001903,
title = "Photoacoustic studies of Zn1−xBexSe mixed crystals: two-layer approach",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "903 - 910",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00080-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000805",
author = "M. Maliński and L. Bychto and S. Łȩgowski and J. Szatkowski and J. Zakrzewski",
keywords = "Photoacoustic spectroscopy",
keywords = "Characterisation of materials",
keywords = "Photoacoustics",
abstract = "Using the photoacoustic spectroscopy, the following composition-dependent material parameters of Zn1−xBexSe mixed crystals were determined: thermal diffusivity, optical absorption coefficient spectra in the region of high absorption and in the Urbach's edge region, the energy gap values and the thermal and compositional broadening of the absorption bands. The quality of the surface of the samples and its influence on the determination of these parameters was checked and discussed."
}
@article{A2001911,
title = "Optimal Reliability Design: Fundamentals and Applications: Way Kuo, V. Rajendra Prasad, F.A. Tillman, Ching-Lai Hwang (Eds.); Cambridge University Press, UK, 2001, 390 pages, Hardback, ISBN 0 521 78127 2 (£37.50)",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "911 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00063-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000635",
author = "A. and Saidane"
}
@article{tagkey2001913,
title = "PatentsALERT",
journal = "Microelectronics Journal",
volume = "32",
number = "10–11",
pages = "913 - 923",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00041-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000416",
key = "tagkey2001913"
}
@article{Z2001707,
title = "Impulse noise in silicon solar cells",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "707 - 711",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00059-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000593",
author = "Z. and Chobola",
keywords = "Impulse noise",
keywords = "Silicon solar cells",
keywords = "Quality control",
abstract = "Noise measured across forward-biased silicon single-crystal solar cells may serve as a non-destructive reliability indicator. Burst noise, whose source consists of defects in the p–n junction space-charge region, was detected on a number of silicon single-crystal solar cells. The trap activation energies have been calculated from the noise versus temperature plots and activation energy of 0.41 eV was found out in this way. The samples were stressed for 5000 h at a temperature of 400 K and reverse bias voltage UR=3 V."
}
@article{Pesic2001713,
title = "An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "713 - 718",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00057-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100057X",
author = "Tatjana Pesic and Nebojsa Jankovic",
keywords = "Heterojunction bipolar transistors",
keywords = "Inverse base width modulation",
keywords = "SiGe base",
abstract = "The analytical model of the collector current ideality factor degradation at high Vbe in modern SiGe graded base heterojunction bipolar transistors (HBTs) has been developed for the first time. It is subsequently used for the analysis of the inverse base width modulation (IBWM) effects in SiGe HBTs with respect to collector current degradation, current gain premature roll-off and SiGe base transit time. Comparing the IBWM effects calculated for HBTs with various base impurity concentration doping profiles and the Ge grading, we have found that the careful optimization of SiGe base parameters may substantially minimize negative influence of the IBMW effects on the HBT electrical parameters."
}
@article{Rimada2001719,
title = "Modelling of ideal AlGaAs quantum well solar cells",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "719 - 723",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00058-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000581",
author = "J.C Rimada and L Hernández",
keywords = "Quantum well solar cells",
keywords = "AlxGa1−xAs solar cell",
keywords = "Open-circuit voltage",
keywords = "Short-circuit current",
abstract = "A theoretical model has been developed to determine the influence of the insertion of multi-quantum wells (MQW) over the conversion efficiencies of AlxGa1−xAs solar cells. Open-circuit voltages, short-circuit current densities, J–V curves and conversion efficiencies have been calculated as functions of the well and barrier band gaps, width and depth of the wells, number of wells in the intrinsic region and the recombination rate in the interfaces. Particular emphasis is placed on the calculation of the photon absorption in AlxGa1−xAs quantum wells. These results are matched with identical p-i-n solar cells without quantum wells. The outcomes of the model show that the insertion of MQW into the depletion region of a p-i(MQW)-n AlxGa1−xAs solar cell can significantly enhance the conversion efficiencies. We demonstrated that for determined values of the studied parameters, the conversion efficiencies of the quantum well solar cell are higher than that of the corresponding cell without quantum wells."
}
@article{Goh2001725,
title = "Latchup characterization of 0.18-micron STI cobalt silicided test structures",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "725 - 731",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00056-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000568",
author = "Wang-Ling Goh and Kiat-Seng Yeo and Stephen Lazuardi and Wei Peng and Kam-Chew Leong and Lap Chan and Alex See",
keywords = "Latchup",
keywords = "characterization",
keywords = "STI",
keywords = "cobalt silicided",
keywords = "modeling",
keywords = "deep submicrometer MOSFETs",
abstract = "The effects of varying both the Shallow Trench Isolation's (STI) dimension and geometrical spacings on latchup behavior for 0.18-μm cobalt silicided CMOS test structures were investigated. The as-developed characterization techniques and models aid in the optimization of device layout. The test data extracted for both the parasitic current gains and parasitic resistances over a range of layout dimensions were analyzed and modeled. The influence of biasing voltages on latchup reliability was also studied."
}
@article{Wang2001733,
title = "On-chip ESD protection design for integrated circuits: an overview for IC designers",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "733 - 747",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00060-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100060X",
author = "A.Z Wang and H.G Feng and K Gong and R.Y Zhan and J Stine",
keywords = "Electrostatic discharging",
keywords = "Integrated circuits",
keywords = "ESD",
keywords = "HDM",
keywords = "MM",
keywords = "CDM",
abstract = "This tutorial paper reviews the state of knowledge of on-chip ESD (electrostatic discharging) protection circuit design for integrated circuits. The discussion covers critical issues in ESD protection design, i.e. ESD test models, ESD failure mechanisms, ESD protection structures, ESD device modeling, ESD simulation, ESD layout issues, and ESD-to-circuit interactions, etc. This review serves to provide practical IC designers with a thorough and heady reference in dealing with complex ESD protection design for integrated circuits."
}
@article{Kang2001749,
title = "Simulation of a new lateral trench IGBT employing effective p+ diverter for improving latch-up characteristics",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "749 - 753",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00055-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000556",
author = "Ey Goo Kang and Sangsig Kim and Man Young Sung",
keywords = "Power integrated circuit",
keywords = "p+ Divert structure",
keywords = "Forward blocking voltage",
keywords = "Turn-off",
keywords = "Latch-up",
abstract = "A new lateral trench insulated gate bipolar transistor (LTIGBT) with p+ diverter was proposed to improve the characteristics of the conventional LTIGBT. The p+ divert layer was placed between the anode electrode and the cathode electrode. Generally, as the conventional LTIGBT had a p+ divert region, the forward blocking voltage was decreased greatly because the n-drift layer corresponding to the punch-through region was reduced. However, the forward blocking voltage of the proposed LTIGBT with p+ diverter was about 140 V. That of the conventional LTIGBT of the same size was 105 V. Because the p+ diverter region of the proposed device was an enclosed trench oxide layer, the electric field moved toward the trench-oxide layer, and punch through breakdown of LTIGBT with p+ diverter occurred. Therefore, the p+ diverter of the proposed LTIGBT did not relate to breakdown voltage in a way different to the conventional LTIGBT. The latch-up current densities of the conventional LTIGBT and LTIGBT with p+ diverter were 540, and 1453 A/cm2, respectively. The enhanced latch-up capability of the proposed LTIGBT with p+ diverter was obtained through holes in the current directly reaching the cathode via the p+ divert region and the p+ cathode layer beneath the n+ cathode layer."
}
@article{Huang2001755,
title = "A dual-channel IEGT",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "755 - 761",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00054-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000544",
author = "S. Huang and G.A.J. Amaratunga and F. Udrea and K. Sheng and P. Waind and L. Coulbeck and P. Taylor",
keywords = "IEGT",
keywords = "IGBT",
keywords = "Trench technology",
keywords = "Voltage drop",
keywords = "Energy loss",
abstract = "A Dual Channel Injection Enhanced Gate Transistor (DC-IEGT) device structure which allows for an additional p-channel to collect holes during turn-off is proposed and analysed in detail by extensive two-dimensional simulations. The DC-IEGT shows overall superior performance over the conventional IEGT and IGBT and is characterised by low on-state voltage drop, fast switching and large SOA."
}
@article{He2001763,
title = "A semi-theoretical relationship between the breakdown voltage of field plate edge and field plate design in planar P–N junction terminated with finite field plate",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "763 - 767",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00053-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000532",
author = "Jin He and Xing Zhang",
keywords = "Planar junction",
keywords = "Curvature effect",
keywords = "Power devices",
keywords = "Field plate termination",
keywords = "Breakdown voltage",
abstract = "A semi-theoretical relationship is presented between the breakdown voltage of the field plate edge and the field plate design in terms of the finite length and the thickness for a planar P–N junction in this brief for the first time. As the effect of the oxide thickness of the field plate on the breakdown voltage is similar to the junction radius of the planar P–N junction, the effect of the field plate length is just similar to the lateral radius of the planar junction. From this analysis, a simple closed form solution suitable for calculating the breakdown voltage of the field plate edge has been obtained and the theoretical prediction is well verified by the previous experimental data and our numerical simulation results."
}
@article{Jansen2001769,
title = "The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "769 - 777",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00039-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000398",
author = "Henri Jansen and Meint de Boer and Henk Wensink and Ben Kloeck and Miko Elwenspoek",
keywords = "Silicon",
keywords = "Cryogenic",
keywords = "High density",
keywords = "ICP",
keywords = "Anisotropic",
keywords = "Plasma",
keywords = "Profile",
keywords = "Crystal",
keywords = "Selectivity",
keywords = "Etch rate",
abstract = "This paper presents a study of the performance of current trends in high speed, highly controllable anisotropic plasma etching of silicon for its use in micro- and nano-engineering. Optimisation rules for tuning the equipment are formulated to enable maximum results with respect to etch rate, etch selectivity, and profile control (e.g. anisotropy). The optimisation process uses the black silicon method to allow for an easy to use design-of-experiment method. After optimisation, etch rates of silicon up to 15 μm/min were obtained at a relatively high pressure (4 Pa=30 m Torr and ICP power (2 kW), while keeping the anisotropy high. At the same time, the erosion rates of thermal silicon dioxide and ordinary photoresist (Shipley S1805) were around 7 nm/min (i.e. selectivities up to 2000). Increasing the pressure to 20 Pa, the selectivity increased to 10,000, although bottling became more pronounced. The high etch rate and high selectivity are especially important in the case of micro-engineering, where wafer through etching with the help of plasmas become a standard in the near future. In the case of nano-engineering, however, profile control is the main concern. To prevent undercut in such cases, in particular, bottling due to a broad ion angular distribution, the pressure should be sufficiently low. The best results were found at pressures below 0.2 Pa=1.5 mTorr and at a low ICP power of 350 W to prevent a too strong mask erosion caused by the low pressure. The silicon etch rate decreased to 1 μm/min and the erosion rate of the oxide and resist were both approximately 20 nm/min, giving a selectivity of 50. Reproducibility (wafer-to-wafer) and uniformity were also output factors of prime concern. Surprisingly enough, for two different equipment manufacturers the results were almost identical when using the same parameter setting. This indicates that the SF6/O2-based chemistry was optimised rather than the equipment itself."
}
@article{Sellai2001779,
title = "Scheme for enhancing efficiency in resonant-cavity Schottky photodetectors",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "779 - 782",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00048-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000489",
author = "A. Sellai and P. Dawson",
keywords = "Schottky photodetectors",
keywords = "Surface plasmons",
keywords = "Reflectance",
abstract = "It is shown that structuring the top layers of a resonant cavity Schottky photodetector in a way that allows coupling between the wave-vector of incident radiation and that of electron-collective oscillations (plasmons) at the surface of the metallic electrode leads to practically zero reflectance in the case of front illuminated devices. This is expected to result in a consequential enhancement in the quantum efficiency in these photodetectors."
}
@article{Alves2001783,
title = "Some optical properties of amorphous hydrogenated carbon thin films prepared by rf plasma deposition using methane",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "783 - 786",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00046-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000465",
author = "Marco A.R. Alves and Jônatas F. Rossetto and Olga Balachova and Edmundo da Silva Braga and Lucila Cescato",
keywords = "Amorphous",
keywords = "PACVD",
keywords = "Radio frequency",
keywords = "Carbon",
keywords = "Refractive index",
abstract = "Amorphous hydrogenated carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition (PECVD) using methane. The optical properties of a-C:H films were investigated by reflectance and transmittance spectrometry in the visible and near-infrared regions. The dependence of refractive index, optical gap, and absorption coefficient are examined as a function of plasma power."
}
@article{A2001787,
title = "Electric Machinery and Transformers: Bhag S. Guru and Huseyin R. Hiziroglu: Oxford University Press, Inc., N.Y, 2001. Hardback, 308 pp, ISBN 0-19-513890-2, £28.99",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "787 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00052-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000520",
author = "A. and Saidane"
}
@article{A2001787,
title = "Wireless Communication Technologies: New Multimedia Systems: Norihiko Morinaga, Ryuji Kohno and Seiichi Sampei: Kluwer Academic Publishers, Boston, 2000. ISBN 0-7923-7900-4, Hardback, 326 pp, 110$",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "787 - 788",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00051-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000519",
author = "A. and Saidane"
}
@article{A2001788,
title = "Analysis Methods for RF, Microwave and Millimeter-Wave Planar Transmission Line Structures: Cam Nguyen: Wiley-Interscience Publication, John Wiley & Sons, New York, 2000. Hardback, 240 pp, ISBN 0-471-01750-7",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "788 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00050-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000507",
author = "A and Saidane"
}
@article{tagkey2001789,
title = "PatentsAlert",
journal = "Microelectronics Journal",
volume = "32",
number = "9",
pages = "789 - 794",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00005-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000052",
key = "tagkey2001789"
}
@article{Rajendran2001631,
title = "Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "631 - 639",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00047-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000477",
author = "K. Rajendran and W. Schoenmaker",
keywords = "Metal oxide semiconductor field effect transistor (MOSFETs)",
keywords = "Miniaturization",
keywords = "Silicon-on-insulator",
keywords = "Interchange",
abstract = "We present a new analytical model derived from Poisson equation for the minimum surface potential (Φm) and sub-threshold swing (S) for grooved-gate metal oxide semiconductor field effect transistor (MOSFETs). The relationship between the groove corner radius (r0), corner angle (α) and device characteristic length (λ) is given. The model can be used to find a lower value of r0 at which smaller potential barrier height can be achieved in grooved-gate MOSFETs compared to other planar and double-gate devices. The study confirms that the present device is resistant to potential barrier lowering, and is also considerably strong. Sub-threshold swing values of the present device are found to be lower than that of the double-gate SOI MOSFETs, confirming the same from device simulator."
}
@article{Kang2001641,
title = "A new trench electrode IGBT having superior electrical characteristics for power IC systems",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "641 - 647",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00045-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000453",
author = "Ey Goo Kang and Seung Hyun Moon and Man Young Sung",
keywords = "Power integrated circuits (PICs)",
keywords = "Silicon-on-insulator (SOI)",
keywords = "Lateral insulated gate bipolar transistor (LIGBT)",
abstract = "A new small-size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed to improve the characteristics of other devices. The entire electrode of the LTEIGBT is replaced with a trench-type electrode. The LTEIGBT is designed so that it has a width of 19 μm. While the latch-up current densities of an LIGBT, LTIGBT and LTEIGBT are 120, 540 and 1230 A cm−2, respectively, that of the proposed LTEIGBT is 10 and two times better than that of the conventional LIGBT and LTIGBT, respectively. The enhanced latch-up capability of the LTEIGBT is obtained due to the fact that the hole current in the device reaches the cathode directly via the p+ cathode layer underneath the n+ cathode layer. The forward blocking voltage of the LTEIGBT is 130 V, while those of the conventional LIGBT and TIGBT of the same size are 60 and 100 V, respectively. Since the electrodes of the proposed device are of a trench type, the electric field accumulates in the trench oxide of the device. Thus, the punch-through breakdown of LTEIGBT occurs. While the conventional LIGBT and LTIGBT both have a turn-off time of 4 μs, that of the LTEIGBT is 0.2 μs."
}
@article{Rane2001649,
title = "Thick film dielectric overlay effects on thin and thick film microstrip bandpass filter",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "649 - 654",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00042-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000428",
author = "Sunit Rane and Vijaya Puri",
keywords = "Thin film",
keywords = "Thick film",
keywords = "Microstrip",
keywords = "Band pass filter",
keywords = "Overlay",
abstract = "This paper reports the performance of thin and thick film microstrip band pass filter due to thick film Al2O3 overlay. The microstrip properties have been investigated for copper thin film component and silver thick film components. The thickness of the thick film overlay varies from 10 to 1000 μm. It is observed that the bandpass characteristics of both the versions of filter are highly dependent on the overlay thickness."
}
@article{He2001655,
title = "Quasi-2-D analytical model for the surface field distribution and optimization of RESURF LDMOS transistor",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "655 - 663",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00038-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000386",
author = "Jin He and Xing Zhang",
keywords = "RESURF principle",
keywords = "LDMOS power transistor",
keywords = "Breakdown voltage",
keywords = "Surface electrical field enhancement",
keywords = "Optimization design",
abstract = "A quasi-2-D analytical model of the surface electrical field distribution and optimization of the RESURF LDMOS is presented in this paper. Based on the 2-D Poisson's solution, the model gives the closed form solutions of the surface potential and electrical field distributions as a function of the structure parameters and drain bias. A criterion for obtaining the optimization trade-off between the breakdown voltage and on-resistance is also presented to serve to quantify the optimal relations of all design parameters. All analytical results are well verified by the numerical analysis obtained by the semiconductor device simulator MEDICI and previous reported experimental data, showing the validity of the model presented here."
}
@article{Moisiadis2001665,
title = "A static differential double edge-triggered flip–flop based on clock racing",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "665 - 671",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00040-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000404",
author = "Yiannis Moisiadis and Ilias Bouras and Angela Arapoyanni and Lampros Dermentzoglou",
keywords = "Flip–flop",
keywords = "Double edge-triggered",
keywords = "Clock racing",
keywords = "Low power",
abstract = "In this paper, a double edge-triggered (DET) flip–flop is proposed, suitable for high-performance and low-power applications. The presented flip–flop has differential structure and provides static operation. The double edge triggering operation is achieved, by generating a narrow pulse immediately after each clocking edge, which is used to set the flip–flop in the transparent phase. The narrow pulse generation technique is based on a clock racing methodology. Compared to existing DET flip–flops, the proposed DET flip–flop results in significant delay and power gains, but keeps the total transistor count low. By applying the narrow pulse to more than one similar adjacent DET flip–flops, we can further reduce the power and the transistor count."
}
@article{Balachova2001673,
title = "Permittivity of amorphous hydrogenated carbon (a-C:H) films as a function of thermal annealing",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "673 - 678",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00030-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000301",
author = "O.V Balachova and J.W Swart and E.S Braga and L Cescato",
keywords = "Amorphous hydrogenated carbon",
keywords = "Annealing",
keywords = "C–V characterization",
keywords = "Permittivity",
abstract = "New metal-insulator-semiconductor structures with a composite insulating layer, consisting of an amorphous hydrogenated carbon (a-C:H) film and a silicon dioxide, were obtained on silicon substrates. Carbon films were deposited on SiO2 layer by radio-frequency plasma-enhanced chemical vapor deposition (rf PECVD) method from methane. The structures were annealed at the annealing temperature Ta=250, 275, 300, and 350°C. C–V characteristics of the annealed and as-grown metal-amorphous carbon-oxide-semiconductor (MCOS) structures were examined at room temperature at a frequency of 1 MHz and compared with C–V characteristics of the classic metal-oxide-semiconductor (MOS) system. High-frequency C–V curves of both MCOS and MOS structures were used for extracting the permittivity ϵa-C:H of carbon films before and after thermal annealing. ϵa-C:H showed no variations with subsequent annealing of the structure up to Ta=250°C, but it was observed to decrease from 5.6 to 2.8 as the film was annealed from 250°C up to 300°C with the most rapid changes occuring between 275 and 300°C."
}
@article{Fairus2001679,
title = "Quantum engineering of nanoelectronic devices: the role of quantum confinement on mobility degradation",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "679 - 686",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00151-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001518",
author = "A.T.M Fairus and V.K Arora",
keywords = "Nanoelectronic devices",
keywords = "Quantum confinement",
keywords = "Mobility degradation",
keywords = "Saturation velocity",
keywords = "MOSFET",
keywords = "Quantum well",
abstract = "Transport properties in semiconductor nanostructures, spanning nanometer dimensions comparable to the de Broglie wavelength of charge carriers, are shown to depend upon the geometry of confinement as quantum waves are encountered. Approximate wave functions are obtained for prototype AlxGa1−xAs/GaAs/AlxGa1−xAs quantum wells (QWs) with finite boundaries that depend on the alloy composition x and those in MOSFET that depend on the applied gate electric field. The leakage of the wave function in classically forbidden regions is accounted for by an enhanced effective width in an equivalent model with infinite boundaries. By relative comparison of the transport parameters obtained in rectangular quantum well (RQW) and triangular quantum well (TQW), we convincingly show that the mobility degradation is a direct result of quantum confinement, in direct contrast to a model that predicts it as being degraded due to electrons becoming hot. The gate capacitance as well as transport in the quasi-free direction is affected by the quantum confinement as wave function peaks at a distance removed from the interface while vanishing at the interface."
}
@article{Arshak2001687,
title = "Modelling and simulations for 40 nm lines/spaces in 1 μm Shipley SPR510A resist using PRIME process",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "687 - 697",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00109-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001099",
author = "K Arshak and A Arshak and M Mihov and D McDonagh",
keywords = "PRIME process",
keywords = "Lithography modelling",
keywords = "Nanolithograpgy",
keywords = "Silylation",
keywords = "Dry development",
abstract = "The Positive Resist IMage by dry Etching (PRIME) process is a high resolution positive resist lithography system incorporating electron beam exposure, silylation (gas/liquid phase), and dry development. In this paper, software has been developed and presented for the modelling and simulation of nanostructures patterned in the PRIME process. The simulation of the electron beam exposure, near ultraviolet flood exposure, post-exposure bake, silylation and dry development process steps have been shown. The electron beam exposure and the absorbed energy density profiles through the resist depth has been simulated using the commercially available lithographic simulator SAMPLE, with source code modifications to include the resist system Shipley SRP510A. In this work, a 40 nm line/space grating in 1 μm thick Shipley SPR510A resist has been successfully modelled, thus showing the feasibility of this software for modelling and simulation of nanostructures by the PRIME process."
}
@article{Mile2001699,
title = "Sadhakar Yalamanchily. Introductory VHDL: From Simulation to Synthesis.: Prentice-Hall Inc., Upper Saddle River, New Jersey 07548, 2001. Hardcover, pp. 401, CD included. ISBN 0-13-080982-9",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "699 - 700",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00044-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000441",
author = "Mile and Stojcev"
}
@article{tagkey2001701,
title = "PatentsALERT",
journal = "Microelectronics Journal",
volume = "32",
number = "8",
pages = "701 - 706",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00149-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000149X",
key = "tagkey2001701"
}
@article{Atanassova2001553,
title = "Influence of γ radiation on thin Ta2O5–Si structures",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "553 - 562",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00043-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100043X",
author = "E Atanassova and A Paskaleva and R Konakova and D Spassov and V.F Mitin",
keywords = "High-k dielectrics",
keywords = "Radiation damage",
keywords = "MOS structure",
abstract = "The effect of γ irradiation (106–5×107 rad) on the electrical and dielectric properties of thin tantalum pentoxide layers obtained by two methods (rf sputtering and thermal oxidation) have been investigated. It is established that the irradiation degrades the characteristics of the layers in terms of dielectric constant, oxide charge and leakage current. At the same time the irradiation does not affect the breakdown fields significantly. The influence of radiation depends on both the dose and the initial quality of the layers including their thickness: the degradation is more severe for the higher dose and the thinner layers; the as-fabricated, non-annealed films show poor immunity to radiation damage. The main source of electrically active defects in irradiated films is associated with the oxygen vacancies and the broken Ta–O and Si–O bonds. It was established that the higher temperature oxidation or annealing in O2 are more beneficial for the radiation hardness of Ta2O5, which seems to be due to more a perfect layer structure obtained at high temperature oxygen treatment."
}
@article{Kim2001563,
title = "Modeling and optimization of process parameters for GaAs/AlGaAs multiple quantum well avalanche photodiodes using genetic algorithms",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "563 - 567",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00037-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000374",
author = "Eui-Seung Kim and Changhoon Oh and Seogoo Lee and Bongyong Lee and Ilgu Yun",
keywords = "Avalanche photodiode",
keywords = "Neural networks",
keywords = "Genetic algorithms",
keywords = "Manufacturing process",
abstract = "In this paper, we present a parameter optimization technique for GaAs/AlGaAs multiple quantum well avalanche photodiodes used for the image capture mechanism in a high-definition system. Even under a flawless environment in a semiconductor manufacturing process, random variation in the process parameters can cause fluctuation in the device performance. The precise modeling for this variation is thus required for accurate prediction of device performance. This paper will first use experimental design and neural networks to model the nonlinear relationship between device process parameters and device performance parameters. The derived model is then put into genetic algorithms to acquire optimized device process parameters. From the optimized technique, we can predict device performance before high-volume manufacturing, and also increase production efficiency."
}
@article{Hirayama2001569,
title = "Finite element analysis of the transmission characteristics of quantum wires in a magnetic field",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "569 - 577",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00034-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000349",
author = "Koichi Hirayama and Yoshihide Taniguchi and Yoshio Hayashi and Masanori Koshiba",
keywords = "Quantum wire",
keywords = "Parabolic potential",
keywords = "Finite element method",
keywords = "Transmitted probability",
keywords = "Transmitted current density",
abstract = "The finite element formulation based on the Galerkin method is proposed for the analysis of the transmission characteristics of quantum wires in a magnetic field. This formulation holds the gauge invariance when the complex conjugate of the wave function is chosen as the test function. Also, it is implied in the formulation that the sum of the outgoing current from a discontinuity region equals the incident current into the region. Moreover, the potential is discretized using the shape function in the quadratic line and triangular elements of the finite element method. If the potential is defined as a quadratic function of the coordinates, it can be exactly described in this discretization, and hence this formulation is very suitable for the analysis of realistic quantum wires, whose potential is often expressed with quadratic functions of the coordinates and similar ones. Some discontinuity problems of quantum wires are analyzed and the validity of our approach is shown in comparison with the results of other analysis methods."
}
@article{Teh2001579,
title = "Study of microstructure and resistivity evolution for electroplated copper films at near-room temperature",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "579 - 585",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00035-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000350",
author = "W.H Teh and L.T Koh and S.M Chen and J Xie and C.Y Li and P.D Foo",
keywords = "Copper metallization",
keywords = "Electroplating",
keywords = "Self-annealing",
keywords = "AFM",
keywords = "Stress",
keywords = "Resistivity",
abstract = "A study on the self-annealing of various electroplated (ECP) blanket copper films of different thickness is performed on 8″ wafers. Uncorrelated evolution of sheet resistance/resistivity and stress as a function of time has been exhibited. The initiation of self-annealing was faster for thicker ECP Cu films. These thicker films demonstrated a higher fraction of sheet resistance and resistivity drop as compared to thinner ones. They recorded a lower residual stress as well. One important observation is that the decrease of the resistivity during self-annealing correlates well with an abrupt rise in its standard deviation, with the resistivity measurements taken evenly across the entire wafer surface. Non-uniform distribution in grain size and the occurrence of grain growth when the film starts to self-anneal is speculated to be the cause for this observation. This is further supported by the AFM results."
}
@article{Yang2001587,
title = "The degradation of p-MOSFETs under off-state stress",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "587 - 591",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00028-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000283",
author = "Cunyu Yang and Ziou Wang and Changhua Tan and Mingzhen Xu",
keywords = "Degradation",
keywords = "p-MOSFETs",
keywords = "Off-state stress",
keywords = "GIDL",
abstract = "The hot carrier effects under off-state stress mode (Vgs=0 V; Vds<0 V) have been investigated on 9 nm p-MOSFETs with channel length varying from 1.025 to 0.525 μm. Both on- and off-state currents are discussed in this paper. It is found that the off-state leakage current will decrease after higher stressing voltage, which is induced by charge injection occurring close to the drain junction. However, the leakage current will increase after lower stressing voltage because of the newly generated interface traps. It is also found that the on-state saturation current and threshold voltage degraded significantly with stress time, which we believe is due to the charges injected near the gate–drain overlapping region and/or the stress-induced interface trap generation. The degradation of Idsat can be expressed as a function of the product of the gate current (Ig) times the number of charges injected into the gate oxide (Qinj) in a simple power law. Finally, a lifetime prediction model based on the degradation of Idsat is proposed."
}
@article{Shaw2001593,
title = "Structural parameters governing properties of GaInSb/InAs infra-red detectors",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "593 - 598",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00029-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000295",
author = "M.J Shaw and E.A Corbin and M.R Kitchin and M Jaros",
keywords = "Heterostructures",
keywords = "Infra-red detectors",
keywords = "Scattering",
keywords = "Absorption",
keywords = "Defects",
abstract = "A series of GaInSb/InAs heterostructures for infra-red detector devices are studied using a strain-dependent empirical pseudopotential scheme. The effect of a number of structural design parameters upon key properties of the structures for detector applications is examined, through the calculation of dynamical characteristics in the presence of commonly occurring defects and through optical absorption spectra. Large changes in the scattering cross-sections of particular defects are related to variations in the superlattice layer widths, enabling the wave-function engineering of optimised detector structures with regard to lifetimes."
}
@article{Salame2001599,
title = "VDMOSFET model parameter extraction based on electrical and optical measurements",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "599 - 603",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00036-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000362",
author = "C. Salame and P. Mialhe and J.-P. Charles",
keywords = "Lateral device paramters",
keywords = "Vertical double diffused metal oxide semiconductor field effect transistor",
keywords = "electrical and optical measurements",
abstract = "Lateral device parameters for VDMOSFET (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor) with hexagonal cells are extracted using an original method based on electrical and optical measurements. Using microscopic observation of the ship of the device and C–V characterization, the lateral device structure parameters could be extracted. Values of the extracted parameters are in good agreement with the values given by the manufacturer. The advantage of this method is the high precision of results for a low cost. Perhaps the most important point of this method is that it can replace the other techniques usually employed, wherein devices are destroyed to obtain the cross section of the structure. The proposed technique can be very useful for analyzing any complex geometrical structure of VDMOS transistors (hexagonal, triangular, square etc…)."
}
@article{Tang2001605,
title = "Effects of preexisting voids on electromigration failure of flip chip solder bumps",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "605 - 613",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00033-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000337",
author = "Zirong Tang and Frank G Shi",
keywords = "Electromigration",
keywords = "Voids",
keywords = "Stochastic simulation",
keywords = "SnPb flip chip solder bump",
keywords = "Design rule",
abstract = "For the first time, the effects of preexisting voids inside the flip chip solder bump and at the interface of bump/underbump metallization (UBM) are considered on electromigration-induced failures to provide a mechanistic understanding on solder bump electrical reliability. Local peaks of current density due to preexisting voids supported by high operating temperature and temperature gradients and gradients of mechanical stress result in inhomogeneous drift of metal atoms, which leads to the formation of hillocks and more microvoids or large voids in the bump or the bump interfaces. The voids decrease the cross-section of the solder contact, which increases local current density and local resistance. This expected positive feedback cycle can eventually lead to the so-called electromigration failure. In the meantime, the increased volume of the extruded hillocks under electromigration can lead to circuit shorts between neighboring bumps, where the distance becomes closer and closer. A stochastic approach is employed to quantify the effects of various preexisting voids. It is found that preexisting voids at the interface of solder bump/UBM is more prone to growth during electromigration and therefore, a much shorter lifetime of the bump. Voids inside the bump can also speed up the failure of the solder bump and their effects depend on their location, size and total volume fraction. The simulation results can be applied for the reliable design of flip chip solder bumps by modifying the design rule with the consideration of the effects of preexisting voids."
}
@article{Chauhan2001615,
title = "Influence of ionising radiation on the performance of CMOS inverter",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "615 - 620",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00031-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000313",
author = "R.K Chauhan and S Dasgupta and P Chakrabarti",
keywords = "CMOS inverter",
keywords = "SPICE model",
keywords = "NMOSFET",
keywords = "PMOSFET",
abstract = "The effect of ionising radiation on the performance of complementary metal–oxide–semiconductor (CMOS) inverter circuit has been investigated theoretically. The radiation induced changes of the constituent transistors (NMOS and PMOS) of CMOS have been used to predict the performance of CMOS inverter in the nuclear radiation environment. The post-irradiated device parameters extracted from the two-dimensional numerical model developed by us were used to simulate the response of CMOS inverter using SPICE package."
}
@article{A2001621,
title = "Space–Time Processing for CDMA Mobile Communications: P. Van Rooyen, M. Lötter, D. Van Wyk; Kluwer Academic Publishers, Boston, 2000, 308 pages, Hardback, ISBN 0-7923-7759-1, (US$ 130)",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "621 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00009-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100009X",
author = "A and Saidane"
}
@article{A2001621,
title = "Optical Sensors and Microsystems: New Concepts, Materials, Technologies: S.Martellucci, A.N.Chester, A.G.Migrani (Eds.); Kluwer Academic/Plenum Press, New York, 2000, 315 pages, hardbound, ISBN 0-306-46380-6",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "621 - 622",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00137-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001373",
author = "A and Saidane"
}
@article{tagkey2001623,
title = "Patents Alert",
journal = "Microelectronics Journal",
volume = "32",
number = "7",
pages = "623 - 629",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00133-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001336",
key = "tagkey2001623"
}
@article{Charitat2001395,
title = "Progress in power semiconductors",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "395 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00049-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000490",
author = "Georges Charitat and Vitezslav Benda and Ninoslav Stojadinovic"
}
@article{K2001397,
title = "High-power robust semiconductor electronics technologies in the new millennium",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "397 - 408",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00010-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000106",
author = "K and Shenai",
keywords = "Power electronics",
keywords = "Power semiconductor devices",
keywords = "Power semiconductor materials",
keywords = "Modeling",
keywords = "Reliability",
keywords = "Silicon",
keywords = "Wide energy band-gap materials",
abstract = "This paper presents an overview of power semiconductor devices for the development of advanced robust high-performance power electronic systems for the new millennium. Material and device technologies on silicon and wide energy band-gap semiconductors are discussed along with switching circuits and topologies. Short-term and long-term reliability issues of power semiconductor devices are discussed. An approach is presented to correlate converter field failures to dynamic switching stresses, residual defects and contaminants left in the semiconductor power switch, packaging, and thermal management. Component and system level simulation, modeling and CAD requirements are evaluated. System-level optimization is proposed as an essential requirement to develop robust power systems at affordable cost."
}
@article{TR2001409,
title = "Integration of power devices in advanced mixed signal analog BiCMOS technology",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "409 - 418",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00011-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000118",
author = "T.R and Efland",
keywords = "Power devices",
keywords = "BiCMOS technology",
keywords = "Process roadmaps",
abstract = "This paper outlines lateral power devices in Power BiCMOS (PBC) technologies where increasing application circuit complexity is driving the need to maintain compatibility with advanced CMOS technology and integration by parts remains a challenge. Different device strategies and process roadmaps are required to maintain competitive products. The need for compatibility with these leading edge CMOS technologies complicates the push for reduced complexity. Product application drivers, device styles combined with process integration challenges and methods, and the future problems with shrinking geometry are discussed."
}
@article{Liou2001419,
title = "AlGaAs/GaAs heterojunction bipolar transistors for power applications: issues of thermal effect and reliability",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "419 - 431",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00012-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100012X",
author = "J.J Liou and C.I Huang",
keywords = "Heterojunction bipolar transistor",
keywords = "Thermal effect",
keywords = "Semiconductor",
abstract = "AlGaAs/GaAs heterojunction bipolar transistor (HBT) has the advantages of superior switching speed, wide linearity, and high current handling capability. As a result, the device has gained popularity in designing power amplifiers for RF and microwave applications. However, the high power in the HBT, together with the poor thermal conductivity of GaAs, gives rise to significant thermal effect and reduced reliability in such a device. This paper presents an overview on the simulation, modeling, and reliability of AlGaAs/GaAs HBTs. Emphasis will be placed on the effects of thermal–electrical interacting behavior on the dc and ac performance of the HBT. The thermal-induced degradation process in the HBT will also be addressed and analyzed."
}
@article{Mawby2001433,
title = "Physically based compact device models for circuit modelling applications",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "433 - 447",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00013-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000131",
author = "P.A. Mawby and P.M. Igic and M.S. Towers",
keywords = "Circuit modelling",
keywords = "Compact device models",
keywords = "Insulated gate bipolar transistor",
keywords = "PiN diode",
keywords = "MOSFET",
abstract = "Physically based compact device models of the MOSFET, as well as PiN diode and insulated gate bipolar transistor (IGBT) are presented in this paper. For the correct description of static and dynamic behaviour of power bipolar devices (IGBT and PiN diode) a 1D module for the drift zone (low doped n-base region) is presented that incorporates conductivity modulation and non-quasistatic charge storage effect. Finally, it is possible to transform, relatively easily, these electric models into the electrothermal models by adding an extra node (thermal node) to the electrical compact models. This thermal node will store information about junction temperature of the active device and it represents a connection between the device and rest of the circuit thermal network."
}
@article{Hazdra2001449,
title = "Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "449 - 456",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00014-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000143",
author = "P Hazdra and K Brand and J Rubeš and J Vobecký",
keywords = "Lifetime control",
keywords = "Ion irradiation",
keywords = "Hydrogen",
keywords = "Helium",
keywords = "Power diodes",
keywords = "Silicon",
abstract = "The impact of local lifetime control by 1H+ and 4He2+ irradiation on blocking characteristics of power P–i–N diodes was studied in the dose range up to 5×1012 cm−2. Energies and doses for both types of projectiles were chosen in a way to create a comparable damage in three qualitatively different regions close to the anode junction. Blocking capabilities of irradiated diodes were measured, compared and simulated. The results show that there is no difference between hydrogen and helium irradiation if the damage is located inside the anode area. When the damage peak is placed into the N-base side of the anode junction and the dose of protons exceeds 1012 cm−2, blocking capability of the diode drastically decreases while it stays at the same level for analogous irradiation by helium ions."
}
@article{Niedernostheide2001457,
title = "Self-protection functions in direct light-triggered high-power thyristors",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "457 - 461",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00015-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000155",
author = "F.-J Niedernostheide and H.-J Schulze and U Kellner-Werdehausen",
keywords = "Self-protection functions",
keywords = "Light-triggered thyristors",
keywords = "High-power devices",
abstract = "Direct light-triggered thyristors with integrated protection functions were fabricated and investigated. It is shown that the simultaneous integration of the light-trigger function and a reliable overvoltage self-protection can be achieved by integrating a diode into the centre of the thyristor. In addition, a dV/dt self-protection function can be integrated by a proper adjustment of the dV/dt capability of the amplifying gates and the main cathode area, ensuring a safe turn-on of the thyristor when a voltage pulse with a dV/dt value exceeding the maximum dV/dt value is applied to the device. Thyristors with different breakdown voltages ranging from 5 to 8 kV on 2-, 4- and 5-inch wafers have been realised."
}
@article{Chamund2001463,
title = "Design, tests and applications of 3.3 kV asymmetrical thyristor",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "463 - 471",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00016-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000167",
author = "D.J Chamund and N.Y.A Shammas",
keywords = "Asymmetrical thyristor",
keywords = "Pulse power",
abstract = "This paper outlines the design, rating and applications of a 3.3 kV asymmetrical thyristor (ASCR) originally designed for crowbar application in power electronics. For high-voltage applications, the trade-off between the high-voltage blocking capability and the dynamic and steady-state characteristics becomes increasingly difficult to achieve for conventional thyristor structures. It is shown that for fast turn-on switch in pulse power applications, the asymmetrical design offers the best performance. Other fast switches such as GTOs and IGBTs can be used in pulse power applications. However, for the GTOs, the gate drive requirements are not simple and the IGBTs have peak current limitation. The preliminary characteristics of a new 3.3 kV ASCR is presented and by comparing with other fast switches, such as GTOs and IGBTs, ASCR is shown to have several performance advantages."
}
@article{Dragomirescu2001473,
title = "Improving the dynamic avalanche breakdown of high voltage planar devices using semi-resistive field plates",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "473 - 479",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00017-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000179",
author = "D Dragomirescu and G Charitat",
keywords = "Power devices",
keywords = "Very high voltage",
keywords = "SIPOS",
keywords = "Dynamic behaviour",
abstract = "The problem of breakdown voltage degradation during transient state is well known for SIPOS terminated or passivated devices. The goal of this paper is to physically explain, model and improve the dynamic behaviour of SIPOS terminated diodes. An RC network model for the SIPOS layer will be used. This model is implemented in a circuit simulator and we put in evidence the cause of the problem: the difference in potential repartition between the static and the dynamic mode. In the static mode the potential at the surface of silicon is distributed linearly between the high voltage contact and the anode (grounded), but in dynamic mode, its repartition is almost parabolic. The SIPOS/oxide/silicon structure equivalent circuit is analysed using circuits theory. We prove that the breakdown voltage degradation during transient state is due to the ratio between the SIPOS layer capacitance and the oxide layer one. A solution to improve the dynamic behaviour up to 3000 V/μs is proposed."
}
@article{Krishnan2001481,
title = "Radial confinement in lateral power devices",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "481 - 484",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00018-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000180",
author = "S Krishnan and M.M De Souza and E.M.S Narayanan and M Vellvehi and J Roig and D Flores and J Rebollo and J Millan",
keywords = "Radial confinement",
keywords = "Lateral power devices",
keywords = "Radial diode",
keywords = "SOI and SOS technologies",
abstract = "The aim of this paper is to demonstrate a novel, radial confinement approach to improve the breakdown performance of a lateral power device. The key feature is that the drift region width decreases gradually from the anode to the cathode to achieve charge confinement in the radial direction. As a result, the n− drift region concentration can be increased by a factor of 7 in comparison to a conventional counterpart leading to a lower specific on-state resistance. This technique is applicable to silicon-on-insulator technologies, such as the SOI or SOS, and to high-voltage thin-film transistor technologies on glass. Experimental results from radial diodes fabricated in SOS technology show a blocking capability higher than from those of their conventional counterparts."
}
@article{Manić2001485,
title = "Analytical modelling of electrical characteristics in γ-irradiated power VDMOS transistors",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "485 - 490",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00019-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000192",
author = "I Manić and Z Pavlović and Z Prijić and V Davidović and N Stojadinović",
keywords = "Analytical modelling",
keywords = "VDMOS transistors",
keywords = "γ-Irradiation",
abstract = "This paper deals with an analysis of γ-irradiation effects on basic electrical characteristics of power VDMOS transistors operated in both linear and saturation regions. First, an analytical model that yields the drain current and transconductance dependencies on gate oxide charge density is developed. The experimental data are utilized to establish a direct relation between the absorbed irradiation dose and the corresponding effective density of gate oxide charges. The drain current and transconductance of VDMOS devices are then modelled as the functions of radiation dose. Finally, the results of modelling are compared with experimental data."
}
@article{Strollo2001491,
title = "Power superjunction devices: an analytic model for breakdown voltage",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "491 - 496",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00020-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000209",
author = "A.G.M Strollo and E Napoli",
keywords = "Superjunction devices",
keywords = "Analytical model",
keywords = "Breakdown voltage",
abstract = "The paper presents an analytic two-dimensional (2D) model for breakdown voltage of recently proposed superjunction structures. The 2D model is able to correctly estimate electric field and breakdown voltage giving an insight into superjunction devices behavior.
Proposed closed form equations for superjunction dimensions and doping as a function of breakdown voltage are useful guidelines to optimal design. The 2D model overcomes the limits of 1D approximations that are likely to overestimate breakdown voltage."
}
@article{Park2001497,
title = "Numerical analysis on the LDMOS with a double epi-layer and trench electrodes",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "497 - 502",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00021-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000210",
author = "I.-Y Park and Y.-I Choi and S.-K Chung and H.-J Lim and S.-I Mo and J.-S Choi and M.-K Han",
keywords = "LDMOS",
keywords = "Double epi-layer",
keywords = "RESURF technique",
keywords = "Trenched electrodes",
keywords = "High drift current density",
abstract = "We proposed a new lateral double-diffused MOS (LDMOS) structure employing a double p/n epitaxial layer, which is formed on p− substrates. Trenched gate and drain are also employed to obtain uniform and high drift current density. The breakdown voltage and the specific on-resistance of the proposed LDMOS are numerically calculated by using a two-dimensional (2D) device simulator, Medici. The n− drift region and upper p− region of the proposed LDMOS are fully depleted in off-states employing the RESURF technique. The simulation results show that the breakdown voltage is 142 V and specific on-resistance is 183 mΩ mm2 when the cell pitch of the LDMOS is 7.5 μm. The proposed LDMOS shows better trade-off characteristics than the previous results."
}
@article{Godignon2001503,
title = "SiC power DIMOS with double implanted Al/B P-well",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "503 - 507",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00022-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000222",
author = "P Godignon and E Morvan and X Jordá and M Vellvehi and D Flores and J Rebollo",
keywords = "Silicon carbide",
keywords = "Power MOSFET",
keywords = "Implantation",
keywords = "High temperature",
abstract = "Power 6H- and 4H-SiC DIMOS test structures have been fabricated using a new technology. P-well formation was optimised from simulation study and previous experiments on high-energy Al implantation. Reduction of Al presence at interface and reduced defect formation during implantation were the main objectives of this optimisation. Complementary surface implantation of boron was performed to adjust the interface (channel) doping. Power DIMOS were characterised at ambient temperature and up to 320°C. 4H-SiC DIMOS exhibits very poor characteristics while 6H-SiC device functionality is maintained at 300°C. Power DIMOS without complementary boron implantation also exhibits good performances up to 300°C."
}
@article{Morancho2001509,
title = "A new generation of power lateral and vertical floating islands MOS structures",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "509 - 516",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00023-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000234",
author = "F Morancho and N Cézac and A Galadi and M Zitouni and P Rossel and A Peyre-Lavigne",
keywords = "FLIMOS transistor",
keywords = "Power devices",
keywords = "Breakdown voltage",
keywords = "Specific on-resistance",
abstract = "In this paper, new vertical and lateral MOS structures are proposed, in which P+ layers called floating islands are located in the drift region. These new structures, called “FLIMOS” (floating islands metal–oxide semiconductor) transistors, are based on the FLI–diode concept in which the voltage handling capability is obtained by many PN junctions in series instead of the conventional diode, where the breakdown voltage is supported by only one PN junction. In the medium voltage range (200–1000 V), the on-state performance of vertical FLIMOSFET is strongly improved when compared to the conventional MOSFET. For instance, for a 900-V vertical FLIMOSFET, a reduction of the specific on-resistance of about 70% relative to the conventional structure and of 40% relative to the silicon limit is observed. But for a 180-V lateral FLIMOSFET, a reduction of 28% relative to the conventional structure is observed, which is not a very significant improvement when compared to medium voltage vertical devices."
}
@article{Garner2001517,
title = "Silicon-on-insulator power integrated circuits",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "517 - 526",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00024-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000246",
author = "D.M Garner and F Udrea and H.T Lim and G Ensell and A.E Popescu and K Sheng and W.I Milne",
keywords = "LDMOSFETs",
keywords = "LIGBTs",
keywords = "Power integrated circuits",
keywords = "Silicon-on-insulator",
keywords = "CMOS",
abstract = "A power integrated circuit process has been developed, based on silicon-on-insulator, which allows intelligent CMOS control circuitry to be placed alongside integrated high-voltage power devices. A breakdown voltage of 335 V has been obtained by using a silicon layer of 4 μm thickness together with a buried oxide layer of 3 μm thickness. The respective LDMOS specific on-resistance and LIGBT on-state voltage for this breakdown voltage were 148 mΩ cm2 and 3.9 V, respectively."
}
@article{Sweet2001527,
title = "Monolithic integration of a high-performance clustered insulated gate bipolar transistor with low-voltage components to form a 3 kV intelligent power chip",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "527 - 536",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00025-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000258",
author = "M Sweet and C.K Ngw and O Spulber and J.V.L Ngwendson and K.V Vershinin and S.C Bose and M.M De Souza and E.M.S Narayanan",
keywords = "Clustered insulated gate bipolar transistor",
keywords = "Intelligence power chip",
keywords = "MOS",
keywords = "Power intergrated chip",
keywords = "NMOS",
keywords = "PMOS",
keywords = "IGBT",
abstract = "For the first time, we evaluate the feasibility of monolithic integration of low-voltage components, such as n and p channel MOSFETs, into a 3 kV novel planar power semiconductor device, called the clustered insulated gate bipolar transistor, to realise an intelligent power chip. The power device employs MOS control with a thyristor to lower the on-state conduction losses and a unique self-clamping feature that provides current saturation at high gate voltages and enables the incorporation of low-voltage devices without any additional processing. This combination paves the way for realising an intelligent power chip with enhanced performance with respect to on-chip temperature, over-current and over-voltage protection circuitry."
}
@article{Park2001537,
title = "A monolithic IGBT gate driver for intelligent power modules implemented in 0.8 μm high voltage (50 V) CMOS process",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "537 - 541",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00026-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920100026X",
author = "J.M Park and E.D Kim and S.C Kim and N.K Kim and W Bahng and G.H Song and S.B Han",
keywords = "Intelligent power modules",
keywords = "IGBT gate driver",
keywords = "Protection circuitry",
abstract = "This paper discusses the design and implementation of a monolithic IGBT gate driver for intelligent power modules (IPMs). The objective of this work is to design and implement a monolithic IGBT gate driver IC with efficient protection functions in a high-voltage (50 V) 0.8-μm CMOS process. The gate driver is designed for medium power applications, such as home appliances. It includes low-voltage logic, 5-V logic regulator, analog control circuitry, high-voltage (50 V) high-current output drivers, and protection circuitry."
}
@article{Kostrubiec2001543,
title = "New laser technology for wire bonding in power devices",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "543 - 546",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00027-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000271",
author = "F Kostrubiec and Z Lisik and R Pawlak and K Jakubowska and A Korbicki",
keywords = "Wire bonding",
keywords = "Laser technologies",
keywords = "Power devices",
keywords = "IPM",
abstract = "Attempts to increase the reliability of the assembly of power transistors have induced the authors to propose a new method for thick wire bonding. Bonding produced in this technology has the form of a weld made by a pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on the semiconductor test structures bring hopes of increasing the reliability of the assembly of such structures."
}
@article{tagkey2001547,
title = "PatentsALERT",
journal = "Microelectronics Journal",
volume = "32",
number = "5–6",
pages = "547 - 552",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00123-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001233",
key = "tagkey2001547"
}
@article{Bubennikov2001287,
title = "Investigation of single-lithography complementary bipolar field-effect elements in nanometer regime",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "287 - 294",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00146-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001464",
author = "A.N. Bubennikov and A.V. Zykov",
keywords = "Single-lithography",
keywords = "CBFE",
keywords = "Field-effect elements",
abstract = "Novel scaled down single lithography complementary bipolar field-effect (CBFE) elements with very high packaging density and high drivability in nanometer regime as a promising approach for advanced highly reliable ultra-speed low-voltage ULSI are studied and simulated. The nanoelectronic CBFE elements on symmetrical transistor structures with undoped or lightly doped bases in nanometer regime are simulated using two-dimensional numerical device-circuit simulator (DCS). The small-sized forced CBFE driving elements, as low-power high-speed buffers, with excellent drivability (0.3–3 ps/fF) are developed for implementing critical paths of ultra-speed sub-0.4 V ULSI. Single-lithography scaling concept for the CBFE with ultra-short base lengths for low-power high-drivability operations are discussed."
}
@article{Lee2001295,
title = "Modeling and characterization of deep trench isolation structures",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "295 - 300",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00148-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001488",
author = "S Lee and R Bashir",
keywords = "Trench isolation",
keywords = "High voltage isolation",
keywords = "Trench modeling",
keywords = "Trench sidewall interface",
abstract = "In this paper, we present a simple equivalent electrical circuit model and sidewall interface characterization results for a deep trench isolation structure. The trench structures used in the study consisted of n-silicon/undoped trench/n-silicon. The trenches were filled with undoped polycrystalline silicon and the trench sidewall was lined with thermal oxide and a deposited silicon nitride. The capacitance–voltage characteristics across the trench were measured and compared against the model predictions. The circuit model includes the effect of the space-charge region and recombination–generation currents in the undoped polycrystalline silicon trench fill material. The Terman method was used to extract the silicon/oxide sidewall interface density and the mid gap value was found to be less than 10−10 #/cm2-eV."
}
@article{Gueorguiev2001301,
title = "Time-dependent-dielectric-breakdown of hydrogen implanted polyoxides",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "301 - 304",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00006-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000064",
author = "V.K. Gueorguiev and Tz.E. Ivanov and C.A. Dimitriadis and S.K. Andreev and L.I. Popova",
keywords = "Silicon dioxide–polysilicon interface",
keywords = "Thin films",
keywords = "Reliability",
keywords = "Time-to-breakdown",
keywords = "Ion implantation",
keywords = "Hydrogenation",
abstract = "The time-to-breakdown (tbd) of polysilicon/polyoxide/polysilicon structures, hydrogenated by hydrogen ion implantation, is investigated. The ln(tbd) versus 1/Eox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G≈270 MV/cm in the time-to-breakdown projection line is obtained. The obtained lower values of the field acceleration factor G, in comparison to as-grown polyoxides, are explained in the terms of the oxide traps generated during the hydrogen ion implantation."
}
@article{Kranti2001305,
title = "An accurate 2D analytical model for short channel thin film fully depleted cylindrical/surrounding gate (CGT/SGT) MOSFET",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "305 - 313",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00008-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000088",
author = "A. Kranti and S. Haldar and R.S. Gupta",
keywords = "Surrounding/cylindrical gate MOSFET",
keywords = "Short channel effects",
keywords = "Threshold voltage",
keywords = "Id–Vd characteristics",
abstract = "The present analysis proposes a 2D analytical model of SGT/CGT MOSFET for potential distribution, short channel threshold voltage and current voltage characteristics. The model takes into account the effect of source/drain resistance, field-dependent mobility, velocity saturation and drain-induced barrier lowering (DIBL) effect. Advantages of SGT/CGT MOSFET over conventional planar structures are analyzed in detail and the results obtained are verified with simulated data."
}
@article{Kim2001315,
title = "Electrical reliability of electrically conductive adhesive joints: dependence on curing condition and current density",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "315 - 321",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00007-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000076",
author = "H.K. Kim and F.G. Shi",
keywords = "Conductive adhesive",
keywords = "Ag/Ag–Cu filler",
keywords = "Cure degree",
keywords = "Current density",
keywords = "Contact resistance",
abstract = "The use of electrically conductive adhesives as interconnection materials in electronic assembly process is increasingly becoming a vital part of the electronics industry. Flip-chip joining technique using conductive adhesives has been identified as a key technology for future electronics assembly and manufacturing. The purpose of the present work is to investigate optimum conditions to achieve the best electrical performance in conductive adhesive joints. This study shows a comparison of electrical performance in conductive adhesive joints at various current densities with different curing conditions. Differential scanning calorimetry and resistance measurement were used to monitor curing condition in conductive adhesives. Accelerated life testing of conductive adhesive joints made of the selected conductive adhesive using different curing conditions was performed with various current densities. The current-induced degradation of conductive adhesive joints was investigated using optical microscopy and electrical resistance measurements. Results show a strong dependence of curing condition and current density on electrical performance of adhesive joints. Additionally, sample cured for less time exhibited better quality than sample cured for more time at high current densities. It is also found that conducting particles move with the current-induced aging, which shows that the migration of conducting particles can induce the failure of conductive adhesive joint during the current-induced resistance increase."
}
@article{SubhasChandraBose2001323,
title = "A novel metal field plate edge termination for power devices",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "323 - 326",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00004-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000040",
author = "J.V. Subhas Chandra Bose and M.M. De Souza and E.M. Sankara Narayanan and G. Ensell and T.J. Pease and J. Humphery",
keywords = "Metal field plate",
keywords = "Power devices",
keywords = "Field limiting ring",
abstract = "A new termination structure, which incorporates metal field plate over every alternate low doped p well ring is presented for planar power devices. This structure is designed to control the punch through voltage between rings to increase the blocking voltage capability while reducing the edge termination area. Measured results based on a 2 kV process technology are consistent with those of numerical modelling and demonstrate that 88% of the plane parallel breakdown voltage can be achieved within 600 μm while maintaining less sensitivity to fixed oxide charge."
}
@article{Gamal2001327,
title = "Simple and efficient Monte Carlo simulation of high-temperature hole transport in silicon and diamond",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "327 - 329",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00147-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001476",
author = "S.H. Gamal and T.S. Al-Harbi",
keywords = "Monte Carlo",
keywords = "Silicon",
keywords = "Diamond",
abstract = "The Monte Carlo method is used to simulate the hole transport in silicon and diamond. A simple model based on one nonparabolic band (the heavy hole band) without iteration has been used. The temperature dependence of the density-of-states effective mass (accounting for nonparabolicity) has been taken into account in calculating the scattering rates. Carrier dynamics have been calculated using the density-of-states effective mass at room temperature, which does not vary considerably from its value at high temperature. The resulting model gives reasonable accuracy above room temperature."
}
@article{Vo2001331,
title = "Towards model-based engineering of underfill materials: CTE modeling",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "331 - 338",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00152-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000152X",
author = "H.T. Vo and M. Todd and F.G. Shi and A.A. Shapiro and M. Edwards",
keywords = "Thermal expansion coefficient modeling",
keywords = "Composite materials",
keywords = "Underfill materials characteristic",
keywords = "Interphase characteristics",
abstract = "Polymeric composite based underfill materials, with well-controlled coefficient of thermal expansion (CTE) are critical to flip-chip and other advanced high-density integrated circuit packaging technologies. The use of underfills beneath the flip-chip integrated circuits leads to an increase in reliability by reducing the strain on the solder bumps during thermal cycling imposed by the CTE mismatch between the chip and substrate. A fundamental understanding of the composite CTE of underfill materials is critical to the manufacture of high performance underfill materials and is critical to market expansion of flip-chip technology for high density packaging applications. This work presents a novel model for predicting the effective CTE of underfills and other polymeric composite materials by considering the effect of an interphase zone surrounding the filler particles in a polymer matrix. A microscopic model is also introduced for the volume fraction of the interphase as a function of filler concentration as well as filler–filler overlapping. The CTE model resolves several conflicts regarding the effect of filler concentration, filler size and filler–polymer interaction on the effective CTE of underfill and other polymeric composite materials. The results are demonstrated to be critical for accurate flip-chip reliability predictions based on finite-element and other modeling techniques."
}
@article{Saine2001339,
title = "An analogue test response compaction technique using delta–sigma modulation",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "339 - 350",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00002-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000027",
author = "Sheikh Saine and Julian Raczkowycz and Peter Mather",
keywords = "Built-In-Self-Test",
keywords = "Analogue response compaction",
keywords = "Mixed-signal test",
keywords = "Delta–Sigma modulation",
abstract = "An analogue and mixed-signal Built-In-Self-Test (BIST) scheme suitable for detecting manufacturing defects in embedded linear macros is presented. The BIST scheme uses a delta–sigma (ΔΣ) modulator and a binary counter to perform an analogue test response compaction technique. This technique produces a signature for a circuit under test, which relates to the amplitude and frequency of the analogue response. Fault simulations performed on a two-stage CMOS operational amplifier and a continuous-time state variable filter have shown that a fault coverage (>80%) is attainable. These simulation results suggest that the probability of any fault masking occurring using the proposed compression technique is insignificant."
}
@article{Ymeri2001351,
title = "On the modelling of multiconductor multilayer systems for interconnect applications",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "351 - 355",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00003-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000039",
author = "H. Ymeri and B. Nauwelaers and K. Maex",
keywords = "Interconnect",
keywords = "Multiconductor transmission lines",
keywords = "Semiconductors",
keywords = "Inductance",
keywords = "Capacitance",
abstract = "In this paper, a new quasi-TEM capacitance and inductance analysis of multiconductor multilayer interconnects is successfully demonstrated by using the dielectric Green's function and boundary integral equation approach. Presented is the case with an arbitrary number of dielectric layers and with zero-thickness conductors in the upper most layer. Since the method has been developed for application on microelectronic interconnect structures, we use the Galerkin method for constant charge distribution on the conductors to generate the numerical results. Since the silicon substrate has a substantial effect on the inductance parameter, it is taken into account to determine the transmission line parameters. Studies conducted here show that ignoring the silicon substrate leads to erroneous results in estimating the inductance parameter of the structure. Since the procedure is very efficient as well as accurate, it will be a very useful tool in the practical calculations for high-speed and high-density IC signal integrity verification."
}
@article{Maneux2001357,
title = "Experimental procedure for the evaluation of GaAs-based HBT's reliability",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "357 - 371",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00106-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001063",
author = "C. Maneux and N. Labat and N. Malbert and A. Touboul and Y. Danto and J.-M. Dumas and M. Riet and J.L. Benchimol",
keywords = "Heterojunction bipolar transistors",
keywords = "Transmission line model",
keywords = "Focused ion beam",
abstract = "This work describes the implementation of an experimental procedure to evaluate the reliability of Heterojunction Bipolar Transistors (HBT) on a GaAs substrate. It is based on the separation of aging test accelerating factors applied on two test vehicles: HBT and Transmission Line Model (TLM) structures associated with emitter, base and collector layers. To identify the physical origin of the degradation mechanism, analysis techniques are used: EDX, SEM and TEM observations for which a new sample preparation method has been worked out. Three different technological fabrication processes, are investigated: AlGaAs/GaAs double-mesa HBT, GaInP/GaAs self-aligned HBT and GaInP/GaAs fully planar HBT. These investigations have revealed two major failure mechanisms: the degradation of SiN–GaAs interface correlated with the increase of emitter-to-base leakage current of HBT submitted to combined bias and temperature stresses; the detachment of Ge/Mo/W emitter ohmic contact related to the base and collector current decrease for high level injection in forward regime.
A 2D simulation has lead to modify the interface electrical properties to evaluate the impact of the two degradations on HBT dc characteristics."
}
@article{Dewey2001373,
title = "Visual modeling and design of microelectromechanical system transducers",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "373 - 381",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00090-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000907",
author = "A. Dewey and V. Srinivasan and E. Icoz",
keywords = "Microelectromechanical system",
keywords = "Transducers",
keywords = "Visual modeling",
keywords = "VHDL-AMS",
keywords = "Design capture",
abstract = "Microelectromechanical systems (MEMS) integrate miniaturized mechanical structures with electronics to extend the benefits of planar integrated circuit technology to a broader class of systems, involving sensors, actuators, filters, resonators, switches, and wave guides. The mechanical structures, such as beams, plates, groves, and diaphragms, implement transduction between energy domains, passive implementations of discrete electrical devices, and conduction paths for electromagnetic radiation [F. Frank, J. Staller, The merging of micromachining and microelectronics, Third International Forum on ASIC and Transducer Technology, Alberta, Canada, May 1990, pp. 53–60, R. Howe, Silicon micromechanics: sensors and actuators in a chip, IEEE Spectrum, July (1990) 29–35].
To realize the potential and growth of microelectromechanical systems (MEMS) technology, many new design and manufacturing challenges must be addressed. The close proximity of the integration of mechanical and electrical domains within the small dimensions associated with very large scale integration (VLSI) presents new energy-coupling issues. The behavior of the overall system is not the simple concatenation of separate mechanical and electrical behaviors, but the simultaneous combination of the mechanical and electrical behaviors. New modeling, analysis, and design techniques are required to address both mechanics and electronics. In this paper, we address initial design capture and system conceptualization of MEMS transducers based on visual modeling and design.
Visual modeling frames the task of generating hardware description language (analog and digital) component models in a manner similar to the task of generating software programming language applications. A domain is created using relevant artifacts and the artifacts are rendered to highlight key design aspects. The artifacts may be directly manipulated in controlled ways to alter design aspects—a process we refer to as design-by-direct-manipulation.
To facilitate the application of visual modeling and design for microelectromechanical transducers, artifacts, renderings, and associated design aspects need to be largely predefined. This requirement leads to a structured topological design strategy wherein microelectromechanical foundry cell libraries are utilized. Microelectromechanical system transducer design becomes a process of exploring candidate cells (topologies), varying key aspects of the transduction for each topology, and determining which topology best satisfies design requirements.
Design renderings and aspects emphasize a circuit level of abstraction. Coupled-energy MEMS characterizations are presented based on branch constitutive relations and an overall system of simultaneous differential and algebraic equations (DAE). The resulting design methodology is called Visual Integrated-Microelectromechanical VHDL-AMS Interactive Design (VIVID)."
}
@article{M2001383,
title = "Algorithms sequential and parallel: a unified approach: R. Miller, L. Boxer; Prentice Hall, Upper Saddle River, NJ, 2000, 330 pages, hardcover, ISBN 0-13-086373-4, £53.99",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "383 - 384",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00142-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001427",
author = "M. and Stojčev"
}
@article{tagkey2001385,
title = "Patents alert",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "385 - 391",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00112-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001129",
key = "tagkey2001385"
}
@article{tagkey2001393,
title = "Calendar",
journal = "Microelectronics Journal",
volume = "32",
number = "4",
pages = "393 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(01)00032-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269201000325",
key = "tagkey2001393"
}
@article{Feng2001189,
title = "A novel on-chip electrostatic discharge protection design for RF ICs",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "189 - 195",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00150-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001506",
author = "H.G. Feng and K. Gong and A.Z. Wang",
keywords = "Electrostatic Discharge",
keywords = "Integrated circuits",
keywords = "Bipolar transistors",
abstract = "A novel, compact electrostatic discharge (ESD) protection structure is designed, which protects integrated circuits (ICs) against ESD damages in all modes. This ultra-fast-response ESD structure, with response time of t1∼0.16 nS, operates symmetrically. Measurements showed desired low holding voltage (∼2 V), low discharging impedance (<2Ω), high current handling capacity and adjustable triggering voltages. ESD testing passed HBM 14 and 15 kV air-gap IEC zapping. Design prediction was achieved by comprehensive mixed-mode ESD simulation. The area-efficient ESD design features small Si consumption, low parasitic effects and is particularly suitable for high-speed VLSI and RF ICs. The design was implemented in commercial sub micron BiCMOS technologies for multi-power-supplies mixed-signal ICs."
}
@article{M2001197,
title = "Conductivity of conductive polymer for flip chip bonding and BGA socket",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "197 - 203",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00153-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001531",
author = "M and Sun",
keywords = "Conductive polymer",
keywords = "Contact resistance",
keywords = "Filler packing structure",
keywords = "Flip chip bonding",
keywords = "BGA sockets",
abstract = "Numerous experimental studies on electrically conductive polymer have showed that the flip chip bonding and BGA socket with conductive polymers have a certain amount of contact resistance between contact pad and conductive polymer and among fillers, in addition to bulk resistance of fillers themselves. The ingress of insulating films into the contact area results in an increase of contact resistance. Conductive polymer generally consists of conductive filler and adhesive polymer matrix. Its conductivity depends not only on filler material, filler ratio, and operating environment, but also on filler packing structure, voltage drop and mechanical stress due to the mismatch of materials’ coefficients of thermal expansion, which results in the deformation of the chip, substrate and printed circuit board. In this paper, an analysis, based on fundamental electrical contact physics, material kinetics and particle packing structure, was conducted to deepen our understanding into the correlation between the conductivity of polymer bonding system and such key variables as filler packing configuration, stress, voltage drop and operating environment."
}
@article{Seah2001205,
title = "Effective modeling of temperature-dependent body current for submicron devices under Bi–MOS hybrid-mode operation",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "205 - 214",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00145-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001452",
author = "Siau Hing Lionel Seah and Kiat Seng Yeo and Jian Guo Ma and Manh Anh Do",
keywords = "Temperature-dependent body current",
keywords = "Impact ionization",
keywords = "Bi–MOS",
abstract = "In a Bipolar/MOS hybrid-mode environment, lateral p–n–p BJT in an active pMOS structure is employed for its high current gain and simple technology. In these designs, the presence of positive source-body voltage (VSB) causes the body current characteristics to deviate from that predicted by models in existing literature. In this paper, a new body current model suitable for hybrid-mode devices is developed. Temperature dependence of the body current in the range from 223 to 398 K has also been modeled. In addition, the effects of temperature and positive VSB on parameters such as threshold voltage, effective channel length, external series resistance and saturation drain voltage, have also been discussed in the model. A multitude of experimental data has been presented to demonstrate the validity of the proposed model for a wide range of biases, temperatures and channel lengths."
}
@article{Kim2001215,
title = "Thickness-dependent thermal reliability of low-dielectric constant polycrystalline PTFE submicron dielectric thin films",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "215 - 219",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00125-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001257",
author = "H.K. Kim and F.G. Shi",
keywords = "Solid–liquid transitions",
keywords = "Thickness dependence",
keywords = "Low-k dielectrics",
keywords = "Ellipsometric angles",
abstract = "According to the SIA National Technology Roadmap for Semiconductors, interlevel dielectrics (ILDs) with a relative dielectric constant less than two will be needed for future integrated circuit devices beyond 0.1 μm generation. For possible low-dielectric constant (low-k) candidates with a relative dielectric constant less than two, polytetrafluoroethylene (PTFE) has the lowest dielectric constant among nonporous low-k materials, and thus is a strong future ILD candidate. As the feature size decreases, the ILD thickness is also expected to decrease. Thus needs exist for characterizing and understanding the possible thickness-induced thermal reliability of PTFE thin films for deep-submicron multilevel interconnection applications. The majority of low-dielectric constant candidates for ULSI ILD applications are amorphous polymers; techniques exist for characterizing the glass transition temperatures of amorphous polymers, which is the critical measure of their thermal stability. However, a simple but reliable method remained to be introduced for characterizing the thermal stability of submicron crystalline thin films such as PTFE. It is determined in the present work that the directly measured ellipsometric angles Δ and ψ can be used for detecting the solid↔liquid transition temperatures of on-wafer polycrystalline thin films. The novel approach is applied for investigating the solid↔liquid transitions of on-wafer PTFE thin films. The results show that the solid–liquid transitions depend on the film thickness as a result of film/surface, film/substrate interactions and the thickness-dependent crystal size. The results can be well described by modifying a previous model for size dependent solid–liquid transitions of nanocrystals."
}
@article{Dai2001221,
title = "Development of a rapid and automated TEM sample preparation method in semiconductor failure analysis and the study of the relevant TEM artifact",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "221 - 226",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00124-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001245",
author = "J.Y. Dai and S.F. Tee and C.L. Tay and Z.G. Song and S. Ansari and E. Er and S. Redkar",
keywords = "TEM sample",
keywords = "Focused ion beam",
keywords = "Semiconductor",
abstract = "Automated TEM sample preparation using focused ion beam (FIB) followed by plucking has been proposed to be a fast and reliable method in semiconductor failure analysis with extremely short cycle time needs. Artifacts caused by sample supporting film to image quality, energy dispersive X-ray (EDX) and electron energy loss spectrum (EELS) analysis are discussed. Damage (amorphizing) to sample surface induced by Ga+ ion beam implantation during Pt protection film deposition was proved by TEM observation, and the method to avoid this damage are proposed."
}
@article{Lu2001227,
title = "Design and testing of a CMOS BDJ detector for integrated micro-analysis systems",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "227 - 234",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00136-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001361",
author = "G.N. Lu and G. Sou and F. Devigny and G. Guillaud",
keywords = "CMOS BDJ detector",
keywords = "Optical detection",
keywords = "Spectral characteristics",
keywords = "Sensitivity",
keywords = "Statistical method",
abstract = "This paper reports the design and testing of a CMOS BDJ (Buried Double p–n Junction) detector for developing integrated microanalysis systems. The device is an optical detector producing two photocurrents (I1 and I2) when it receives an incident flux. It can be operated either as a photodetector by using its output current I1+I2, or as a colour detector if the photocurrent ratio I2/I1 is considered as the detector response. For photometric detection, the device has a sensitive response covering the visible and near-IR regions, and for colour detection, the photocurrent ratio I2/I1 versus wavelength is monotonic increasing when wavelengths are larger than 430 nm. A statistical method is employed for sensitivity testing, and noise analysis is performed. At low signal levels, a minimum intensity-independent noise level, mainly due to noise contributions of the coupled amplifiers, sets a detectivity of about 0.7×1012 cm Hz1/2 W−1. On-chip integration of low-noise preamplifiers may further improve sensitivity performance."
}
@article{Siddiqui2001235,
title = "Surface-potential-based charge sheet model for the polysilicon thin film transistors without considering kink effect",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "235 - 240",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00131-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001312",
author = "M.J. Siddiqui and S. Qureshi",
keywords = "Poly-silicon thin film transistors",
keywords = "Surface-potential",
keywords = "Charge sheet model",
abstract = "An expression for surface potential for Poly-Silicon Thin Film Transistors (Poly-Si TFT) is derived. The surface potential thus calculated numerically as a function of terminal voltage is used in the proposed dc charge sheet model for Poly-Si TFT to determine the drain current as a of function terminal voltage in the linear and saturation regions using single expression. The model is verified using available experimental data for output and transfer characteristics for different Poly-Si TFTs and shows good agreement with the experimental data. However, the proposed model does not consider the kink effect which is dominant at higher drain to source voltage."
}
@article{Bose2001241,
title = "Id–Vd characteristics of optically biased short channel GaAs MESFET",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "241 - 247",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00120-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001208",
author = "S. Bose and M. Gupta and R.S. Gupta",
keywords = "MESFET",
keywords = "GaAs",
keywords = "Photo-generation of carriers",
keywords = "Photovoltaic effect",
keywords = "Photoconductive effect",
abstract = "Two-dimensional analytical model for optically biased non-self-aligned and self-aligned short channel GaAs MESFETs is developed to show the photoeffects on the Id–Vd characteristics, using Green's function technique. When light radiation having photon energy equal to or greater than the bandgap energy of GaAs is allowed to fall, the drain current increases significantly as compared to dark condition due to photoconductive effect in parasitic resistances and photovoltaic effect at the gate Schottky-barrier region. Some of the predicted results agree well with the experimental/numerical data."
}
@article{McNally2001249,
title = "Compact DC model for submicron GaAs MESFETs including gate-source modulation effects",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "249 - 251",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00103-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001038",
author = "P.J. McNally and B. Daniels",
keywords = "Compact DC model",
keywords = "Submicron GaAs MESFET",
keywords = "Gate-source modulation",
abstract = "Recent submicron DC GaAs MESFET models (Ahmed et al., IEEE Trans. Electron. Devices, ED-44 (1997) 360) are improved in order to more accurately facilitate non-linear small-signal circuit designs. The Ahmed–Ahmed–Ladbrooke (AAL) model (Ahmed et al., IEEE Trans. Electron. Devices, ED-44 (1997) 360), allowed for the prediction of the DC characteristics of large-signal submicron devices by using the concept of a shift in threshold voltage. The new model proposed in this paper uses a small number of variables and, while improving on the AAL model, retains the essential form of the more common Curtice and Advanced Curtice models (Curtice, IEEE Trans. Microwave Theory Tech., MTT-28 (1980) 4456; de Graaff and klaassen, Compact Transistor Modelling for Circuit Design, Springer, Vienna, 1990) together with accounting for gate-source voltage modulation effects."
}
@article{Colonna2001253,
title = "A versatile 3.3 V CMOS laser driver system",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "253 - 263",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00135-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000135X",
author = "V Colonna and G Gandolfi and A Baschirotto",
keywords = "Compact disc",
keywords = "Laser driver",
keywords = "Diode",
abstract = "A fully integrated laser driver circuit dedicated to control the bias current of the pick-ups in a single-chip Compact-Disc front-end is presented. The proposed solution uses a closed loop structure whose operating point is set with a 6-bit on-chip DAC. The proposed laser driver can be used with pick-up's and application boards with different features. This makes the proposed solution interesting for a wide range of applications. The main versatility aspects regard the possibility of avoiding the use of an external capacitance and to operate with pick-up's presenting a large variation of transimpedance gain. The complete circuit is designed in a standard 0.35 μm CMOS technology and operates from a single 3.3 V power supply."
}
@article{Ferri2001265,
title = "Rail-to-rail adaptive biased low-power Op-Amp",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "265 - 272",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00132-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001324",
author = "G. Ferri and G.-C. Cardarilli and M. Re",
keywords = "Low-power",
keywords = "Adaptive biasing",
keywords = "Spice simulation",
abstract = "This paper presents a novel power-efficient operational amplifier (Op-Amp) topology, suitable for both standard CMOS and bipolar technologies. The circuit is based on the adaptive biasing (AB) topology, presented by the authors earlier (Microelectron. J. 30(3) (1999) 223), aimed to find an optimum trade-off between slew-rate and power consumption. The proposed amplifier has been designed by applying the above-cited AB principle to both the input stage (for increasing dynamically the input source current, see Microelectron. J. 31(3) (1999) 153) and the class-AB output stage (to control and limit the output current). A constant-Gm topology has been used in the input stage in order to obtain high linearity and good frequency compensation. The circuit shows rail-to-rail input and output characteristics and good performance as well as a high efficiency factor when compared with the other adaptive biasing solutions presented in the literature."
}
@article{M2001273,
title = "Sampling in Digital Signal Processing and Control: A. Feuer, G.C. Goodwin, Birkhauser, Boston, 1996, 541 pages, ISBN 0-8176-3934-9",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "273 - 274",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00143-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001439",
author = "M. and Naumović"
}
@article{D2001274,
title = "RF Circuit Design — Theory and Applications: R. Ludwig, P. Bretchko, Prentice Hall, Upper Saddle River, NJ 07458, 642 pages, hardcover, ISBN 0-13-095323-7, US$97.00",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "274 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00141-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001415",
author = "D. and Krstić"
}
@article{M2001274,
title = "Handbook Series on Semiconductors Parameters: M. Levinshtein, S. Rumyantsev, M. Shur (Eds.); World Scientific, Singapore, ISBN 981-02-2934-8, 981-02-2935-6, 218pp. Hard Bound, £54.00",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "274 - 275",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00144-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001440",
author = "M. and Henini"
}
@article{AnnovazziLodi2001285,
title = "Erratum to “Mechanical-thermal noise in micromachined gyros” [Microelectron. J. 30 (1999) 1227–1230]",
journal = "Microelectronics Journal",
volume = "32",
number = "3",
pages = "285 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00140-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001403",
author = "V. Annovazzi-Lodi and S. Merlo"
}
@article{LR200199,
title = "A design based on proven concepts of an SEU-immune CMOS configuration data cell for reprogrammable FPGAs",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "99 - 111",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00134-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001348",
author = "L.R. and Rockett",
keywords = "SEU-immune",
keywords = "Logic-configuration",
keywords = "Circuit simulation",
abstract = "This paper describes the design and operation of a single-event upset (SEU) immune CMOS logic-configuration data cell design for reprogrammable digital logic circuits. The configuration data cell design is based on proven concepts. The data cell consistently assumes a prescribed data state when powered-up thus minimizing turn-on power dissipation and preventing data bus contention. Control signal pulses can be applied to selectively read the state of a data cell and to selectively set a data cell to a desired data state. Regardless of the data being stored, the data cell is SEU-immune. Circuit simulations are used to verify the full operation and SEU-immunity of the data cell design, even at worst case conditions."
}
@article{Arshak2001113,
title = "Development of screen-printed polymer thick film planner transformer using Mn–Zn ferrite as core material",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "113 - 116",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00122-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001221",
author = "K.I. Arshak and A. Ajina and D. Egan",
keywords = "Thick-film",
keywords = "Planner transformer",
keywords = "Mn–Zn magnetic ferrite",
keywords = "SMPS",
keywords = "Polymer thick film",
abstract = "Miniaturization of high-efficiency switch-mode power supplies (SMPS) is limited by the size of passive transformers and coils that use large ferrite cores with magnet-wire windings. Fortunately, the availability of planar magnetic transformers and coils (thick and thin films) allows SMPS designers to achieve low-profile architectures that can be easily mounted on a printed circuit board (PCB).
The transformer is the key to reduce the size and the cost of the SMPS. Reduction in the size and cost of the transformer can be achieved by changes in both the shape and topology. Improvements in manufacturing technology and reduction in material content can be made by increasing the operating frequency.
In this work, polymer thick film transformer was fabricated using thick film screen-printing technology. Polymer base paste is used to print, the magnetic, isolation and conductor layers. The Mn–Zn ferrite material is used as a core material for this transformer. The efficiency for this transformer was measured to be 90% at a frequency of 500 KHz."
}
@article{Dasigenis2001117,
title = "A single-electron XOR gate",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "117 - 119",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00126-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001269",
author = "M.M Dasigenis and I Karafyllidis and A Thanailakis",
keywords = "Single-electron circuit",
keywords = "Logic gates",
abstract = "A new single-electron circuit implementing the logic function XOR is presented in this paper. The logic gate proposed consists of five tunnel junctions, two capacitors and four islands. The operation of this gate is analysed using Monte Carlo simulation. The simulation results show that the gate operates in stable regions."
}
@article{Hardikar2001121,
title = "An investigation into the mechanisms limiting the safe operating area of a LIGBT in DI and DELDI technologies",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "121 - 126",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00119-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001191",
author = "S Hardikar and Y.Z Xu and G.J Cao and M.M De Souza and E.M Sankara Narayanan",
keywords = "Lateral insulated gate bipolar transistors",
keywords = "Safe operating areas",
keywords = "Double epitaxial layer dielectric isolation",
keywords = "Dielectric isolation",
abstract = "The Forward Bias Safe Operating Areas (FBSOA) of 500 V LIGBTs in the Dielectric Isolation (DI) and the Double Epitaxial Layer Dielectric Isolation (DELDI) technologies are investigated by detailed numerical calculations. The FBSOA of a DELDI LIGBT is found to be wider than its DI counterpart. The factors limiting the sustaining voltage in the on-state have been identified. A shallow floating P-layer incorporated under the gate extension results in a significant improvement of the SOA in both the technologies."
}
@article{Ren2001127,
title = "The influence of doping density on short channel effects immunity in deep sub-micron grooved-gate PMOSFETs",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "127 - 132",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00117-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001178",
author = "Hongxia Ren and Yue Hao",
keywords = "Deep sub-micron",
keywords = "Grooved-gate PMOSFET",
keywords = "Channel doping density",
keywords = "Substrate doping density",
keywords = "Short channel effects",
keywords = "Threshold voltage",
keywords = "Corner effect",
abstract = "Based on hydrodynamic energy transport model, the short channel effect immunity in deep sub-micron grooved-gate PMOSFET is studied and the influences of substrate and channel doping density on this effect immunity are also studied. At the same time, the results are compared with those of corresponding conventional planar devices. The investigated results show that the short channel effect can be depressed deeply for grooved-gate devices in deep sub-micron and super-deep sub-micron regions and with the increase of substrate and channel doping density, the threshold voltage rises and short channel effects are diminished. But the variation of threshold voltage in grooved-gate devices is smaller than that in planar devices. In the end, the results are explained based on the interior physics mechanism in these devices."
}
@article{Koshevaya2001133,
title = "Modelling of vacuum-silicon solid microwave diodes and triodes based on P++–N and on tungsten cathodes",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "133 - 136",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00116-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001166",
author = "S.V Koshevaya and V.I Kanevsky and M Tecpoyotl-Torres and G.N Burlak and J Escobedo-Alatorre and V.E Chayka",
keywords = "Field-emission",
keywords = "Vacuum-solid diode and triode",
abstract = "This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in the millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small multiplication losses.
Additionally, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes, shows that the efficiency and the frequency band of diodes with P++–N cathode are smaller than for the case of tungsten diodes."
}
@article{Halidou2001137,
title = "Heavily silicon-doped GaN by MOVPE",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "137 - 142",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00118-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000118X",
author = "I Halidou and Z Benzarti and Z Chine and T Boufaden and B El Jani",
keywords = "Silicon-doped GaN",
keywords = "MOVPE",
keywords = "Amphoteric behavior",
abstract = "Heavily Si-doped GaN epitaxial layers have been grown at 1050°C on AlN-buffered (0001) sapphire substrates by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylaluminuim and ammoniac sources. H2 was the carrier gas. The silicon doping characteristics of GaN epilayers have been investigated by varying the silane (SiH4) flow. In order to calibrate the thickness of the buffer layer and the surface flatness of GaN, the growth was monitored in situ by laser reflectometry. Electron concentration between 5×1018 and 2.2×1020 cm−3 was obtained with mobility ranging from 200 to 9 cm2/V s. A saturation tendency of electron concentration appears. The comparison between the Hall effect measurements and theoretical calculations of mobility based on a simple model leads to the determination of the compensation ratio of the samples which depends strongly on the SiH4 partial pressure. We attribute the origin of this compensation to the amphoteric behavior of silicon."
}
@article{Kalra2001143,
title = "Flicker noise modelling of small geometry LDD MOSFETs",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "143 - 147",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00102-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001026",
author = "E. Kalra and A. Kumar and S. Haldar and R.S. Gupta",
keywords = "Noise",
keywords = "Small geometry",
keywords = "LDD-MOSFET",
abstract = "An analytical 1/f noise model based on the evaluation of channel charge in small geometry Lightly Doped Drain (LDD) MOSFETs is developed. The analysis includes the short channel, narrow width, LDD and DIBL effects. The intricacy of analyses when both the device dimensions are scaled together has been overcome and a simple model valid in the submicrometer range is presented. It is found that the noise in small geometry LDD MOSFETs is higher than that in the short channel LDD MOSFETs putting hard limit to miniaturisation widthwise."
}
@article{Stojcev2001149,
title = "A hardware mid-value select voter architecture",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "149 - 162",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00114-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001142",
author = "M.K. Stojcev and G.Lj. Djordjevic and M.D. Krstic",
keywords = "Fault tolerant systems",
keywords = "Triple modular redundancy",
keywords = "Mid-value selection voting",
keywords = "Error masking",
keywords = "Data acquisition system",
abstract = "This paper presents a VLSI fault-tolerant voter, with redundancy designed into the internal chip architecture. The design features are internal input interface module with built-in mechanism to detect single transmission error, and mid-value select voter logic which generates two types of output, a voted value and a congruency status level. We have performed extensive studies of error coverage design strategies of our logic for error detection and selection. Firstly, instead of three we propose installation of four sensor elements. This scheme, in the presence of single transmission error, allows the implementation of a simple replacement policy, which is based on substitution of the erroneous value (mainly a transient error), with a correct one. Secondly, in order to insure that the voted value represents a correct consensus, we propose a mid-value hardware voting technique thanks to which we solve the problem of dissemination of each sensor element value to other ones. Finally, the effect of fault-tolerance on voter performance is discussed."
}
@article{Sabelka2001163,
title = "A finite element simulator for three-dimensional analysis of interconnect structures",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "163 - 171",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00113-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001130",
author = "R Sabelka and S Selberherr",
keywords = "Partial differential equation solvers",
keywords = "Finite element method",
keywords = "Interconnect analysis",
keywords = "Capacitance",
keywords = "Resistance",
keywords = "Electro-thermal simulation",
abstract = "We have developed a set of simulation programs for two- and three-dimensional transient analysis of ULSI interconnects. The program package is called “Smart Analysis Programs” (SAP) and it supports capacitance and resistance extraction, quasi-electrostatic simulation (calculation of delay times and crosstalk), and coupled electro-thermal simulations. For the numerical solution of the involved partial differential equations (Euler equation, Poisson equation, heat conduction equation), we apply the finite element method. Also available are a set of tools for construction of the input geometry, importing layout files, layout parameterization, automatic grid generation, postprocessing, and visualization of the simulated results. The simulators have been successfully used in various applications. Two representative examples are presented. In the first application, we calculate the resistance of a via in a copper dual damascene process and analyze the temperature and current density distributions. The second example is a matched polysilicon resistor pair. Here the delay time, crosstalk effects, and the mismatch in the resistances caused by self-heating due to high current is investigated."
}
@article{Koshevaya2001173,
title = "Vacuum-silicon solid microwave diodes and triodes based on P++–N and on tungsten cathodes",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "173 - 175",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00111-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001117",
author = "S.V Koshevaya and V.I Kanevsky and M Tecpoyotl-T and E.A Gutiérrez-D and G.N Burlak and V.E Chayka",
keywords = "Vacuum-solid microwave diodes and triodes",
keywords = "Tungsten cathodes",
keywords = "Amplifiers and generators",
abstract = "This work reports the analysis of vacuum-solid microwave diodes and triodes. It shows the possibility to use these devices as amplifiers and generators in millimetre and submillimetre ranges. It is also possible to create multipliers with a large multiplication factor and small losses of the multiplication.
In addition, the analysis of the basic parameters of these vacuum-solids microwave diodes with different types of cathodes shows that the diodes with a back voltage P++–N cathode have a wide frequency band, but an efficiency smaller than that of the tungsten diodes."
}
@article{M2001177,
title = "The Blue Laser Diode: The Complete Story (2nd and extended edition): S. Nakamura, S. Pearton, G. Fasol; Springer-Verlag Berlin Heidelberg New York, 368 pages, ISBN: 3-540-66505-6",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "177 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00138-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001385",
author = "M and Henini"
}
@article{A2001178,
title = "Acoustic Signal Processing for Telecommunication: S.L. Gay, J. Benesty (Eds.); Kluwer Academic, Boston, 2000, 333 pages, hardbound, ISBN 0-792-37814-8",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "178 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00121-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000121X",
author = "A and Saidane"
}
@article{A2001179,
title = "Copper — Fundamental Mechanisms for Microelectronic Applications: S.P. Murarka, I.V. Verner, R.J. Gutmann; Wiley-Interscience Publication, John Wiley & Sons, Inc., NY, 2000, 340 pages, casebound, ISBN 0-471-25256-5",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "179 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00115-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001154",
author = "A and Saidane"
}
@article{M2001180,
title = "Handbook of Semiconductor Manufacturing Technology: Y. Nishi, R. Doering (Eds.); Marcel Dekker, New York, ISBN 0-8247-8783-8",
journal = "Microelectronics Journal",
volume = "32",
number = "2",
pages = "180 - ",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00139-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001397",
author = "M and Henini"
}
@article{Horváth20011,
title = "A Si MEMS microbearing with integrated safety sensors for surgical applications",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "1 - 9",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00073-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000732",
author = "I. Horváth and P. Panayotatos and Yicheng Lu",
keywords = "Micro-electromechanical system",
keywords = "Microsurgical cutting tools",
keywords = "Surgical applications",
abstract = "A silicon micromachined bearing was designed and fabricated consisting of a pair of self-aligning v-grooves. The two Si v-grooves were bonded together to form the three-dimensional structure through solder bumps of 75 μm diameter that provide alignment with a crucial vertical displacement tolerance. The microbearing includes integrated diode temperature sensors that serve to monitor a safe operating range under load. Current versus temperature curves and finite element analysis simulate the range of diode sensitivity. This three-dimensional structure, fabricated by silicon technology, demonstrates that a four to ten fold reduction in surgical cutting tool size can be achieved by utilizing the micromachined silicon microbearing in a micro-electromechanical system (MEMS) device. A prototype microtool has been bench tested and compared with realistic operating conditions. Based on this comparison, the microbearing holds promise for application in microsurgical cutting tools or as a MEMS cutting tool for surgical applications."
}
@article{Bhattacharya200111,
title = "Integral passives for next generation of electronic packaging: application of epoxy/ceramic nanocomposites as integral capacitors",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "11 - 19",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00104-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000104X",
author = "S.K Bhattacharya and R.R Tummala",
keywords = "Integral passives",
keywords = "Capacitor",
keywords = "Resistor",
keywords = "Inductor",
keywords = "Integration",
keywords = "RLC",
keywords = "RC",
keywords = "Nanocomposite",
abstract = "The consumer demand for product miniaturization with increased functionality and reliability is ever growing in the electronic industry. Integral passive is a novel emerging technology which is perceived as a possible alternative to discretes in fulfilling the next generation of packaging needs. Although, integral passive technology has been proven to be a viable option, there are several barriers for implementing this technology such as efficient circuit design with increased component density, qualification of new materials for integral passive components and substrates, time-to-market a new product, technology transfer and product scale up toward commercialization, and most importantly cost competitiveness. Integration of passive components on substrates imposes a major design and fabrication challenge and has been a subject of increasing interest in the packaging community today. In this paper, we address materials and processes for integral capacitors and their co-integration with integral resistors and inductors. Dielectric constant values in the range of 3.5–50 with increase in filler loading up to 50 vol% are achieved in the epoxy nanocomposite system where the dielectric constant of the host polymer is limited to ∼3.5. The capacitors are relatively stable up to a frequency range of 120 Hz to 100 kHz. Feasibility of integration of capacitor components has been demonstrated through fabrication of several industrial prototype circuits. Materials and process issues for passive elements such as resistors, capacitors, and inductors and the need for developing alternative substrate materials have also been addressed in this paper."
}
@article{Strollo200121,
title = "Low-power flip-flops with reliable clock gating",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "21 - 28",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00072-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000720",
author = "A.G.M Strollo and E Napoli and D De Caro",
keywords = "CMOS digital integrated circuits",
keywords = "Flip-flops",
keywords = "Low-power circuits",
keywords = "Transition probability",
abstract = "The paper presents two gated flip-flops aimed at low-power applications. The proposed flip-flops use new gating techniques that reduce power dissipation deactivating the clock signal. The presented circuits overcome the clock duty-cycle limitation of previously reported gated flip-flops.
Circuit simulations with the inclusion of parasitics show that sensible power dissipation reduction is possible if the input signal has reduced switching activity. A 16-bit counter and an audio sampler register are presented as examples of low-power applications."
}
@article{Wong200129,
title = "Application of IDDQ test in failure analysis of micro-controller devices",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "29 - 34",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00075-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000756",
author = "M.W.T. Wong and A.M.F. Yu and C.K. Li",
keywords = "Testability",
keywords = "Failure Analyses",
keywords = "IDDQ",
abstract = "This paper presents a real case study on the testing of 8-bit mixed-signal CMOS micro-controller devices by applying the IDDQ testing methodology. The aim of the study is to evaluate the feasibility of using the IDDQ test to enhance the overall fault coverage. Failure analysis operated on the failed sample indicated a good correlation between the fault coverage and the parts that failed the IDDQ test."
}
@article{Duffy200135,
title = "Scaling embedded EEPROMs for the integration in deepsubmicron technologies",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "35 - 42",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00074-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000744",
author = "R Duffy and A Concannon and A Mathewson and B Lane",
keywords = "Embedded nonvolatile memory",
keywords = "Submicron geometries",
keywords = "Scaling issues",
keywords = "Short channel effects",
keywords = "Disturbs",
abstract = "Applications such as systems-on-chip and memory cards require embedded code storage at increasingly small dimensions. In this work a study of scaling embedded EEPROM cells for the integration in deep submicron technologies is undertaken. A well-structured methodology will be proposed and applied to a number of different EEPROM cell types that have been integrated successfully in submicron CMOS processes to date. When scaling embedded nonvolatile memories it is difficult to generate accurate scaling laws or general rules because the performance targets and operating requirements of the memory cells are strongly dependent on the application and process technology in which they are to be integrated. It is possible to generate rules that are application or process technology specific, but it is the aim here to evaluate the scaling of these embedded EEPROMs without a particular application or process technology in mind."
}
@article{Kumar200143,
title = "Low-frequency generation–recombination noise in fully overlapped lightly doped drain MOSFETs",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "43 - 47",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00077-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000077X",
author = "A. Kumar and E. Kalra and S. Haldar and R.S. Gupta",
keywords = "Generation–recombination noise",
keywords = "Drain MOSFETs",
keywords = "Bulk-channel junction",
abstract = "A model for generation–recombination (g–r) noise in FOLD MOSFETs is presented incorporating the field dependent mobility and the bias dependent series resistance. The g–r noise is due to the emission and capture of carriers in the space charge region in the bulk-channel junction. It is observed that noise power increases with increasing drain voltage and decreases with decreasing gate voltage. The results so obtained are compared with the experimental data."
}
@article{Fissore200149,
title = "a-C:H Films deposited on crystalline silicon to masking it anisotropic etching by aqueous ethylenediamine solution",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "49 - 51",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00076-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000768",
author = "A Fissore and M.A.R Alves and E da Silva Braga and L Cescato",
keywords = "Hydrogenated carbon film",
keywords = "Mask",
keywords = "Silicon anisotropic etching",
abstract = "Amorphous hydrogenated carbon (a-C:H) thin films deposited by r.f. chemical vapor deposition were applied as mask to anisotropic etching of crystalline silicon by aqueous solution of Ethylenediamine with Pyrocatechol (EDP). Films with thicknesses of approximately 100 nm were successfully patterned on silicon slices by the lift-off process. Then the masked samples were submitted to one aqueous EDP solution during time intervals of 8, 16, 24 and 100 min at a temperature of 98°C. The inspection showed well defined etching pattern and absence of etch pits on the surface underneath the film indicating the high chemical resistance of the a-C:H film to the aqueous EDP solution."
}
@article{Tang200153,
title = "Stochastic simulation of electromigration failure of flip chip solder bumps",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "53 - 60",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00100-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001002",
author = "Z Tang and F.G Shi",
keywords = "Electromigration",
keywords = "Stochastic simulations",
keywords = "Flip chip SnPb solder bumps",
abstract = "Stochastic simulations are performed for the first time to explore the nature of electromigration failure of SnPb flip chip solder bumps at room temperature. Treating the SnPb flip chip solder bump as a random resistor network and electromigration as a diffusion-controlled depletion–accumulation process, the main features of limited experimental observations are well reproduced. The microstructure and current density dependence of the time to failure, the median time to failure and the dynamics of void/hillock growth, as well as the electromigration-induced resistance fluctuations are obtained to provide a comprehensive interpretation of electromigration process and failure in terms of physical parameters in SnPb solder bumps. The approach introduced in the present work can be used for elucidating the most important factors in controlling the electromigration and its rate of flip chip solder bumps, and thus contribute to their optimal design."
}
@article{Golan200161,
title = "Novel approach to sputtered tantalum film resistors with controlled pre-defined resistance",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "61 - 67",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00101-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001014",
author = "G. Golan and A. Axelevitch and R. Margolin and E. Rabinovitch",
keywords = "Sputtered tantalum film resistors",
keywords = "Controlled pre-defined resistance",
keywords = "Vacuum photothermal processing",
abstract = "A controlled magnetron sputtering method to obtain precision thin-film tantalum resistors with preset resistance values, is presented. These tantalum film resistors consist of layers of pure tantalum atoms and tantalum oxides. The proposed sputtering method is based on a previous mathematical modeling developed by the authors. With this modeling, one can predict the final product performance as a function of its technological deposition parameters. Feasibility tests to obtain tantalum and tantalum oxide film resistors with a controlled range of resistances, were done on a dedicated sputtering set-up. As a reactive agent in the experimental tests, only residual gases were used.
Using the proposed model, precision film resistors with repeatable properties, were achieved in direct relations to the sputtering process parameters. It was found that only two major independent parameters are influencing the resistivity of the tantalum films: (a) the argon pressure in the vacuum chamber; and (b) the sputtering high voltage given to the target. A threshold level of tantalum phase transition from metal to dielectric, was found. Around this threshold level all types of pre-defined resistance may be achieved.
The resistance stability of the obtained films, following an annealing Vacuum Photothermal Processing (VPP) was studied as well. It was shown that the electrical properties of the obtained resistors following a VPP treatment were improved with a better resistance stability."
}
@article{Chan200169,
title = "Designing CMOS folded-cascode operational amplifier with flicker noise minimisation",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "69 - 73",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00105-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001051",
author = "P.K Chan and L.S Ng and L Siek and K.T Lau",
keywords = "Noise optimisation",
keywords = "CMOS operational amplifier",
abstract = "The strategy for minimising the flicker noise in the folded-cascode amplifier topology is presented and the inter-relationship of design parameters for optimum design is described. The HSPICE simulation results correlate very well with the theory and validate the design methodology. The proposed solution offers good tradeoff on the conflicting performance parameters such as noise, silicon area, bandwidth and power consumption. It will be useful for the analytic model in CAD design optimisation and allows fast computation or first-order hand analysis on noise evaluation."
}
@article{Kamoulakos200175,
title = "Device simulation of a n-DMOS cell with trench isolation",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "75 - 80",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00108-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001087",
author = "G Kamoulakos and Th Haniotakis and Y Tsiatouhas and J.-P Schoellkopf and A Arapoyanni",
keywords = "Trench isolation",
keywords = "Drift MOSFET",
keywords = "High voltage device",
keywords = "Device simulation",
abstract = "The DMOS cell, a high-voltage transistor, implemented in low voltage standard 0.18 μm double-well CMOS technology with trench isolation is studied. The operation of the cell is investigated with the use of a device simulator while the effect of the trench to the operation of the cell is revealed."
}
@article{Lusth200181,
title = "Eliminating non-logical states from linear quantum-dot-cellular automata",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "81 - 84",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00107-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001075",
author = "J.C. Lusth and C.B. Hanna and J.C. Dı́az-Vélez",
keywords = "Computer architecture",
keywords = "Quantum-dot-cellular automata",
abstract = "Quantum-dot-cellular automata are a method of computing with small numbers of electrons. The static shape of a particular automaton corresponds to a problem to be solved while the time-dependent evolution of the distribution of electrons within the automaton corresponds to a computation to solve the problem. The final distribution of electrons within the automaton represents a solution. The robustness of an automaton is characterized as the absolute energy difference between the lowest energy state and the first excited state. For computing IDENTITY, a basis for translating values across a larger system, it is shown that the robustness of the automaton can be improved dramatically by redesigning to eliminate non-logical states. By such redesign, the states that populate the energy levels between the logically correct answer and logically incorrect answers are prohibited, thereby increasing the energy gap between the ground state and the first excited state."
}
@article{Liu200185,
title = "An analytical model of small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "85 - 88",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00110-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200001105",
author = "K.-W. Liu and A.F.M. Anwar",
keywords = "Inverted high-electron mobility transistors",
keywords = "Self-consistent",
keywords = "Small-signal parameters",
abstract = "An analytical model to calculate the small-signal parameters for GaAs/AlGaAs inverted high electron mobility transistors is presented. The model is based on a self-consistent solution of the Schrödinger and Poisson's equations and non-linear velocity–electric field (vd−E) characteristic to evaluate the small-signal parameters for this class of devices. These include transconductance gm, drain resistance rd, gate-source capacitance Cgs and unity current gain cut-off frequency fT. The analytical results are compared with the experimental data and show excellent agreement."
}
@article{A200189,
title = "Multi-Carrier Spread Spectrum and Related Topics: K. Fazel, S. Kaiser (Eds.); Kluwer Academic Publishers, Boston, December 1999, 360 pages, ISBN 0-792-37740-0, £90",
journal = "Microelectronics Journal",
volume = "32",
number = "1",
pages = "89 - 90",
year = "2001",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00071-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000719",
author = "A and Saidane"
}
@article{N2000837,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "837 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00079-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000793",
author = "N. and Stojadinovic"
}
@article{E2000839,
title = "Microelectronics and photonics — the future",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "839 - 851",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00086-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000860",
author = "E. and Suhir",
keywords = "Microelectronics",
keywords = "Photonics",
keywords = "High-technology engineering",
abstract = "We address some major trends in microelectronics, photonics, and some other areas of “high-technology” engineering. We discuss which of the new directions and emerging technologies in this field of engineering look most promising, and what challenges a mechanical/materials/reliability engineer will most likely encounter in connection with these trends and technologies."
}
@article{VK2000853,
title = "Quantum engineering of nanoelectronic devices: the role of quantum emission in limiting drift velocity and diffusion coefficient",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "853 - 859",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00085-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000859",
author = "V.K and Arora",
keywords = "Quantum emission",
keywords = "Nanoelectric devices",
keywords = "Diffusion coefficient",
abstract = "Quantum emission is possible when an electron, after traversing an inelastic scattering length, emits a quantum of energy. Diffusive and drift electron transport in a semiconductor subjected to an applied electric field is evaluated using a steady-state asymmetric distribution function that takes into account quantum-emission-induced modification of the mean free path. The drift velocity of an electron is shown to be limited to the thermal velocity and diffusion coefficient unaffected in the absence of quantum emission. However, a presence of quantum emission in a high electric field lowers the saturation velocity and diffusion coefficient. Transport parameters in the ohmic regime remain unaffected owing to complete absence of quantum emission. In the model presented, the saturation velocity does not sensitively depend upon the momentum-randomizing scattering events that control the mobility. As a result of deviation from the linear velocity-field characteristics, the electron mobility is degraded. The Einstein ratio of the diffusion coefficient to mobility is then considerably enhanced and more so under ac conditions. An alternative description of this enhancement in terms of a hot electron temperature, both under ac and dc conditions, is also given."
}
@article{Badenes2000861,
title = "Integration challenges in sub-0.25 μm CMOS-based technologies",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "861 - 871",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00084-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000847",
author = "G Badenes and L Deferm",
keywords = "CMOS",
keywords = "Technology",
keywords = "Scaling",
abstract = "Market demands, which require increased functionality at lower costs are driving the development of high performance CMOS technologies with very high integration density. These demands are pushing the continuous scaling down of technologies and are resulting in a progressive acceleration of the rate of introduction of new technology generations.
Current research and development activities in CMOS technology are focused on scaling CMOS technologies below 0.25 μm dimensions. While some of the process modules can be scaled down in a conventional way, in some cases severe limitations are reached and it is necessary to introduce major modifications to the process flow.
In this paper we will present an overview of the main considerations to be kept in mind when scaling down to a 0.18 or 0.13 μm CMOS technology generation."
}
@article{Grasser2000873,
title = "Mixed-mode device simulation",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "873 - 881",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00083-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000835",
author = "T Grasser and S Selberherr",
keywords = "Mixed-mode device simulation",
keywords = "Compact modeling",
keywords = "Electro-thermal problems",
abstract = "In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state-of-the-art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electro-thermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques."
}
@article{Nathan2000883,
title = "Amorphous silicon detector and thin film transistor technology for large-area imaging of X-rays",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "883 - 891",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00082-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000823",
author = "A Nathan and B Park and A Sazonov and S Tao and I Chan and P Servati and K Karim and T Charania and D Striakhilev and Q Ma and R.V.R Murthy",
keywords = "Amorphous silicon technology",
keywords = "Thin film transistors",
keywords = "Imaging arrays",
abstract = "This paper reviews amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability are presented along with optimization of materials and processing conditions for reduced VT-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (∼120°C) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, are also discussed along with preliminary results."
}
@article{Liberali2000893,
title = "Crosstalk effects in mixed-signal ICs in deep submicron digital CMOS technology",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "893 - 904",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00081-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000811",
author = "V. Liberali and R. Rossi and G. Torelli",
keywords = "Analog/digital circuits",
keywords = "Crosstalk phenomenon",
keywords = "Modeling approach",
abstract = "This paper illustrates the crosstalk phenomenon and its impact on the design of mixed analog/digital circuits with high accuracy specifications. Generation of digital disturbs, propagation through the substrate, and effects on analog devices are considered, with particular emphasis on integrated circuits realized on heavily doped substrate, where traditional shielding is less effective. Techniques to reduce analog/digital crosstalk are reviewed and discussed. A simple modeling approach is presented, suitable for the analysis of crosstalk effects using a conventional electrical simulator (SPICE). Experimental results on a test chip are presented to validate the modeling approach."
}
@article{Rogachev2000905,
title = "The influence of strong electric field on the interface in the Al–SiO2-n-Si Auger transistor",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "905 - 911",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00096-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000963",
author = "A.A. Rogachev and V.D. Kalganov and N.V. Mileshkina and E.V. Ostroumova",
keywords = "Auger transistor",
keywords = "Impact ionisation",
keywords = "Hot electrons",
keywords = "Self-consistent quantum wells",
keywords = "Field emission",
keywords = "Tips",
keywords = "Strong electric field",
abstract = "The influence of the strong electric field on electron emission from semiconductor surfaces was investigated. We have measured a tunnel electron emission from the metal to the semiconductor in metal–insulator–semiconductor heterostructures with a tunnel transparent insulator layer. A tunnel electron emission from semiconductor tips to vacuum was also investigated. Semiconductor tip field emitters make the investigation of the semiconductor surface at extremely strong electric field possible. On the other hand the investigation of metal–insulator–semiconductor heterostructures allows to realize the emission of hot electrons from the metal to the semiconductor, and enables the creation of Auger transistor based on the Al–SiO2-n-Si heterojunctions. This is one of the fastest operating semiconductor bipolar transistors. The estimations show that metal–insulator–semiconductor Auger transistor based on the Ga–In–As–Sb solid solution with varying composition makes it possible to increase the highest operation frequency of the Auger transistor up to ten times compared with the silicon based Auger transistor, and in effect approaches the highest frequency of more than 10−12 s."
}
@article{Ma2000913,
title = "Thorough analysis of quantum mechanical effects on MOS structure characteristics in threshold region",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "913 - 921",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00097-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000975",
author = "Yutao Ma and Litian Liu and Zhiping Yu and Zhijian Li",
keywords = "MOS structure",
keywords = "Threshold voltage",
keywords = "QMEs",
keywords = "Model",
abstract = "Threshold voltage shift due to quantum mechanical effects (QMEs) are studied for both n- and p-MOS structure in the paper. Subband structure and carrier distribution are formulated for both type of MOS structure in effective mass approximation. QMEs on threshold voltage shift are thoroughly analyzed based on the model. Carrier distribution in subbands for both n-MOS and p-MOS are calculated and analyzed from density-of-states point of view. Model results for n- and p-MOS structure are compared with experimental and full-band self-consistent calculation results and show good coincidence. It is proved that at least in threshold region, effective mass approximation has similar accuracy as the full-band self-consistent method to predict the influence of QMEs MOS structure characteristics."
}
@article{Yamada2000923,
title = "Evaluation of electron pressure effect in low-field drain region of submicron GaAs MESFET using ensemble Monte Carlo simulation",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "923 - 927",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00098-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000987",
author = "Y Yamada and M Hasegawa",
keywords = "Electron pressure effect",
keywords = "GaAs MESFET",
keywords = "Ensemble Monte Carlo simulation",
abstract = "The ensemble Monte Carlo simulation is carried out to study effects of electron pressure on mean electron velocity in GaAs MESFET with a gate length of 0.2 μm. The four components of the mean electron velocity are separately evaluated on a main channel. It is found that the electron pressure component is comparable to the drift one or exceeds it in the low-field drain region. Including the electron pressure component into that of the drift produces a very large deviation from the Einstein relation and leads to too big an effective mobility. Thus, it is not good to take the electron pressure component into the effective mobility. The electron pressure term as well as those of the drift and diffusion should be independently treated."
}
@article{Arshak2000929,
title = "The design and development of a novel flyback planar transformer for high frequency switch mode DC–DC converter applications",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "929 - 935",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00099-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000999",
author = "K.I. Arshak and B. Almukhtar",
keywords = "Flyback planar transformer",
keywords = "DC–DC converter",
keywords = "Power density",
abstract = "In this work a 2 cm×2 cm novel thick film planar transformer is designed and developed. The planar transformer height effect on the power density was studied. This planar transformer was used in a Flyback switch-mode DC–DC converter with a pulse width modulator feedback control circuit. The switch mode converter and the planar transformer showed a high efficiency of 90 and 99% at 2 MHz operating frequency, respectively."
}
@article{Golan2000937,
title = "Atomic force microscopy investigation of dislocation structures and deformation characteristics in neutron-irradiated silicon detectors",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "937 - 944",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00093-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000938",
author = "G Golan and E Rabinovich and A Inberg and M Oksman and P.G Rancoita and M Rattaggi and K Gartsman and A Seidman and N Croitoru",
keywords = "Force microscopy",
keywords = "Neutron fluences",
keywords = "Microhardness",
abstract = "The structure, microhardness and deformation characteristics of silicon detectors were investigated following a neutron irradiation, using optical and Atomic Force (AFM) microscopes. Electron Beam induced Current (EBIC) of a Scanning Electron Microscope (SEM) was used for a direct investigation of the influence of the neutron irradiation on a p–n junction space charge region. This neutron irradiation resulted in a deterioration in the electronic performance of silicon detectors. The results of these investigations had an important contribution to the understanding of silicon damage processes created by neutron irradiation. The studies have shown that in the interval of neutron fluences (Φ) 9.9×1010≤Φ≤3.12×1015 n/cm2the damage was accumulative (from small point defects to high-defects accumulations). Abrupt changes in the microstructure, electrical [Nucl. Instrum. Meth. A, 315 (1992) 149; Nucl. Instrum. Meth. B, 95 (1995) 21; Nucl. Instrum. Meth. B, 111 (1996) 297] and mechanical properties appeared practically at the same fluence value of Φ≥104 n/cm2. This fact demonstrates on the strong relation between the properties of the damaged silicon semiconductor and the silicon detector as an electronic device.
Microscopy studies have shown that with the increase of Φ, different types of defects such as dislocation loops and their tangling appear. These dislocations are displaced in specific regions, due to the process of vacancies and interstitials, which increase their cumulation. The strongly damaged regions were imaged in the microscope as black (B) islands and the less damaged regions were imaged as white (W) islands. Microhardness measurements to the damaged detectors have shown the same islands in the damaged regions. Using an AFM it was found that the W regions contain smaller number of dislocation loops and a large amount of single point defects with their cumulations."
}
@article{Zubert2000945,
title = "rescuer — the new solution in multidomain simulations",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "945 - 954",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00092-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000926",
author = "M. Zubert and M. Napieralska and A. Napieralski",
keywords = "Multidomain simulation",
keywords = "Hardware description language",
keywords = "The modern silicon structures",
keywords = "Discretisation of partial differential operators",
keywords = "Mapping algorithm of DAE into SPICE language",
keywords = "rescuer",
abstract = "Selected problems of a new method of partial differential equations for hardware description language translation are presented in this publication. The partial differential operator discretisation using the extended no-mesh finite difference method and the ordinary differential equations conversion into an equivalent electrical sub-circuit are demonstrated. The method was developed by the authors and applied in the rescuer software. The comparison with other simulation programs and application of the rescuer to modelling of physical phenomena in various modern silicon microstructures are also presented in the paper."
}
@article{Badila2000955,
title = "An improved technology of 6H-SiC power diodes",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "955 - 962",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00091-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000914",
author = "M. Badila and G. Brezeanu and G. Dilimot and J. Millan and P. Godignon and J.P. Chante and M.L. Locatelli and N. Mestres and A. Lebedev",
keywords = "6H-SiC",
keywords = "Power diodes",
keywords = "Boron compensation",
abstract = "A refined technology of SiC p–n junctions is proposed. Usage of boron to compensate the high doping of n layers on structures with different continuous areas is primarily experimentally demonstrated. A comparison between the electrical characteristics of boron compensated and uncompensated diodes is presented. Then a technology using cellular structure for 6H-SiC large area p–n devices is designed and optimized. For these split area structures the micropipes effect is avoided. Based on a matrix structure with 0.16 mm2 cell area a medium power (600 V breakdown voltage and 1 A at forward voltage of 5 V) p–n diode has been fabricated and tested."
}
@article{Yoo2000963,
title = "Numerical analysis of SOI LDMOS using a recessed source and a trench drain",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "963 - 967",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00094-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000094X",
author = "S.-J Yoo and S.-H Kim and Y.-I Choi and S.-K Chung",
keywords = "Recessed source",
keywords = "Trench drain",
keywords = "On-resistance",
abstract = "A new SOI LDMOS using a recessed source and a trench drain was proposed to improve the on-characteristics at a given breakdown voltage. On-resistance and breakdown voltages of the proposed LDMOS are investigated by the two-dimensional simulator, MEDICI. The simulation results show that the on-resistance of the proposed and the conventional LDMOS are 76.3 and 129.5 mΩ mm2, respectively. The on-resistance of the proposed LDMOS decreases by 41% compared to that of the conventional LDMOS at the same breakdown voltage of 36.5 V."
}
@article{Hanreich2000969,
title = "Investigation of the thermal performance of micro-whisker structured silicon heat spreaders for power devices",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "969 - 973",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00095-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000951",
author = "G Hanreich and J Nicolics and G Stangl",
keywords = "Heat spreader",
keywords = "Whisker",
keywords = "Thermal management",
abstract = "The driving forces of developments in power electronics are the continuing miniaturization and enhancement of power densities. New packaging concepts are required allowing the dissipation of a power loss density of up to several hundred W/cm2 at operation temperatures as low as possible. A promising attempt to decrease the thermal resistance to the ambient is the development of silicon substrates structured with microwhiskers perpendicular to its surface. An industrial application of this new heat spreader technology in power electronic modules makes necessary the specification of the substrate properties. In this work, a new method for determination of thermal qualities based on laser heating of the heat spreader, surface temperature measurement by thermovision, and dynamic reverse modeling is described. For numerical determination of the thermal characteristics, the measured data are evaluated with the help of a thermal model of the heat spreaders under various boundary conditions. The respective temperature distributions are calculated with a new simulation tool using an alternating-direction implicit algorithm (ADI-method). Results obtained from heat spreaders with microwhisker treatment are compared with those from reference samples with a polished surface. Based on these results a view on future applications for power electronics assemblies are derived."
}
@article{Vujanic2000975,
title = "Silicon microstructure for precise measurements of mechanical moments",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "975 - 980",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00080-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000080X",
author = "A Vujanic and N Adamovic and M Jakovljevic and W Brenner and G Popovic and H Detter",
keywords = "Silicon micromachining",
keywords = "Moment measurements",
keywords = "Torsional springs",
abstract = "In this paper we report the use of silicon bulk micromachining for inexpensive fabrication of miniature silicon springs used as sensing elements in a system for measurement of small mechanical moments. Such ‘torsional microsprings’ twist when mechanical moment is applied at the central part of the structure. The springs are designed and fabricated in a way where it is relatively easy to technologically control all geometrical dimensions in micrometer range. Further on, since the spring is made from silicon, the mechanical hysteresis is negligible, which is very important when measuring small moments."
}
@article{Jakšić2000981,
title = "Optimised high-frequency performance of Auger-suppressed magnetoconcentration photoconductors",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "981 - 990",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00087-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000872",
author = "Z Jakšić and Z Djurić",
keywords = "Non-equilibrium photodetectors",
keywords = "Auger suppression",
keywords = "Magnetoconcentration",
keywords = "Exclusion",
keywords = "Electromagnetically carrier-depleted detector",
keywords = "Response time",
abstract = "In this work we analyse the Auger-suppressed non-equilibrium HgCdTe magnetoconcentration photoconductors in order to optimise their specific detectivity-bandwidth product (D∗f∗). We solved numerically the set of general equations for semiconductor in crossed electric and magnetic fields for the case of large non-equilibrium. Larger quenching of the carrier concentration within the active area suppresses the generation–recombination noise and simultaneously shortens the response time. At the same time higher fields intensify carrier heating. There is an optimum balance between the field intensities and the beneficial effects of Auger suppression and for this the maximum D∗f∗ product is obtained."
}
@article{Marković2000991,
title = "A general method in synthesis of pass-transistor circuits",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "991 - 998",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00088-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000884",
author = "D Marković and B Nikolić and V.G Oklobdžija",
keywords = "CMOS",
keywords = "Digital integrated circuits",
keywords = "Pass-transistor logic",
keywords = "Logic synthesis",
keywords = "Karnaugh maps",
abstract = "A general method in synthesis and signal arrangement in different pass-transistor network topologies is analyzed. Several pass-transistor logic families have been introduced recently, but no systematic synthesis method is available that takes into account the impact of signal arrangement on circuit performance. In this paper we develop a Karnaugh map based method that can be used to efficiently synthesize pass-transistor logic circuits, which have balanced loads on true and complementary input signals. The method is applied to the generation of basic two-input and three-input logic gates in CPL, DPL and DVL. The method is general and can be extended to synthesize any pass-transistor network."
}
@article{Zivkovic2000999,
title = "Computer-aided test flow in core-based design",
journal = "Microelectronics Journal",
volume = "31",
number = "11–12",
pages = "999 - 1008",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00089-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000896",
author = "V.A Zivkovic and R.J.W.T Tangelder and H.G Kerkhoff",
keywords = "Embedded core test",
keywords = "Test pattern generation",
keywords = "Test synthesis",
keywords = "VLIW test",
abstract = "This paper copes with the efficient test-pattern generation in a core-based design. A consistent Computer-Aided Test (CAT) flow is proposed based on the required core-test strategy. It generates a test-pattern set for the embedded cores with high fault coverage and low DfT area overhead. The CAT flow is applied within Philips Core Test Pilot IC project. In addition, it will be shown how the proposed CAT flow can be further modified and used to decrease the number of test patterns within a VLIW TTA processor core. Besides reducing the number of test cycles, it also maintains a high fault coverage and keeps the DfT area low."
}
@article{Rencz2000725,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "725 - 726",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00050-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000501",
author = "M Rencz and V Székely"
}
@article{Székely2000727,
title = "New approaches in the transient thermal measurements",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "727 - 733",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00051-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000513",
author = "V Székely and S Ress and A Poppe and S Török and D Magyari and Zs Benedek and K Torki and B Courtois and M Rencz",
keywords = "Thermal transient testing",
keywords = "Thermal transient tester",
keywords = "Multi-port models",
keywords = "Reduced order models",
abstract = "In the first part of the paper a thermal transient measurement approach is presented that can be applied for the generation of multi-port compact dynamic thermal models of IC packages. Experimental results prove the applicability of the ideas. In the second part of the paper the recent advances in the development of the appropriate measurement tools are described. Among others the authors present a new thermal transient test chip, and T3ster, a new thermal transient tester equipment, developed for high precision one-port or multi-port transient thermal measurements."
}
@article{Breglio2000735,
title = "Experimental detection of time dependent temperature maps in power bipolar transistors",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "735 - 739",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00052-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000525",
author = "G Breglio and P Spirito",
keywords = "Transient temperature distribution",
keywords = "Time dependent temperature maps",
keywords = "Power bipolar transistors",
abstract = "In this paper, we present a completely automated experimental set-up for transient temperature distribution measurements on the surface of the semiconductor power devices. Based on direct radiometric measurements, the proposed system is able to acquire, with high spatial (less than 10 μm) and quite good time (less than 10 μs) resolution, the temperature maps of devices biased in critical working conditions without damaging them.
As an example of the measurement set-up capability, we show some measurements on the onset of the hot spot in two different kind of cellular BJTs. The obtained results confirm that the electro-thermal instability is mainly dependent on the lay-out of the device under test. Moreover, hot-spot growth is much faster than the heating time constant of the chip. Finally, we obtained the result that the hot-spot size is almost constant, independently from the chip area."
}
@article{Breglio2000741,
title = "Thermal mapping and 3D numerical simulation of new cellular power MOS affected by electro-thermal instability",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "741 - 746",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00053-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000537",
author = "G Breglio and N Rinaldi and P Spirito",
keywords = "Thermal mapping",
keywords = "Numerical simulator",
keywords = "Electro-thermal instability",
abstract = "In this paper we present experimental results of dynamic thermal mapping on a new class of low-voltage high-current power MOS transistors. Moreover, we have developed an electro-thermal simulation tool in order to analyze and understand the causes that can determine the temperature instabilities observed in these devices. Experimental results indicated that, similarly to power BJTs, also in this class of devices the hot-spot phenomenon occurs. The experimental set-up, based on a InSb single sensor, is able to achieve a high time resolution (less than 10μs), high spatial resolution (less than 10 μm on 5×5 cm2 active areas) and good temperature resolution (less than 0.1°C)."
}
@article{Bosc2000747,
title = "Thermal characterization of LDMOS transistors for accelerating stress testing",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "747 - 752",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00054-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000549",
author = "J.M Bosc and P Dupuy and J Gil and J.M Dorkel and G Sarrabayrouse",
keywords = "Semiconductor industry",
keywords = "Multi-pulse testing",
keywords = "Energy pulse characterization",
abstract = "The time to market is a major concern in the high-technology industry and when designing new products, the development cycle time becomes critical. Indeed, when a delay occurs in the development schedule, the potential market share of the designed product can be drastically decreased. In this context, developing accelerated stress testing (AST) in order to assess quickly the long-term behavior of a semiconductor becomes extremely useful. In this paper we show an example of how thermal characterization including simulation can be used to define a consistent AST for power ICs."
}
@article{D'Amore2000753,
title = "Electro-thermal analysis of paralleled bipolar devices",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "753 - 758",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00055-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000550",
author = "D. D'Amore and P. Maffezzoni",
keywords = "Electro-thermal analysis",
keywords = "Power BJTs",
keywords = "Nonlinear dynamics",
keywords = "Thermal instability",
abstract = "This work considers the unstable behavior that can occur in paralleled bipolar transistors due to the interaction between electrical and thermal dynamics. A simple and intuitive electro-thermal model of the BJT is employed to explain the mechanism that causes unbalanced collector currents limiting the practical usage of this configuration. The operating conditions for which instability occurs are analyzed both by means of circuit simulations and experimental measurements."
}
@article{Stepowicz2000759,
title = "Influence of electrothermal interactions on nonisothermal small-signal parameters of BJTs in ICs",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "759 - 764",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00056-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000562",
author = "W.J. Stepowicz and J. Zarębski",
keywords = "BJT",
keywords = "Nonisothermal small-signal parameters",
keywords = "Mutual thermal interactions",
abstract = "The electrothermal interactions affect the d.c. and a.c. characteristics of semiconductor devices and ICs. In discrete BJTs the selfheating phenomenon leads to the electrical inertia caused by the thermal inertia, what makes the a.c. small-signal parameters to be complex at low and very low frequencies. In bipolar ICs, apart from the selfheating, the mutual thermal interactions between BJTs take place, and so they modify the a.c. small-signal parameters of the devices as well."
}
@article{Wang2000765,
title = "Improving cooling efficiency by increasing fan power usage",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "765 - 771",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00057-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000574",
author = "D.G Wang and P.K Muller",
keywords = "Cooling",
keywords = "System level cooling",
keywords = "Cooling efficiency",
keywords = "Fan power usage",
keywords = "Ductwork",
abstract = "An innovative cooling technique was developed in an effort to significantly improve the system level cooling efficiency by increasing fan power usage and to extend the envelope of forced air-cooling technology. It involves a ductwork that can deliver cooling air to specific locations with optimized airflow velocity and volume with respect to specific cooling requirements. In addition, cooling efficiency is further improved by utilizing turbulence and air impingement regardless of component locations on a PWB and within an equipment enclosure. Experimental results revealed that this technique is far more efficient and effective than the conventional system level forced air-cooling technique."
}
@article{GI2000773,
title = "Enhancing forced convection heat transfer from multiple protruding heat sources simulating electronic components in a horizontal channel by passive cooling",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "773 - 779",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00058-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000586",
author = "G.I. and Sultan",
keywords = "Passive cooling",
keywords = "Holes/open area ratio",
keywords = "Protruding heat sources",
abstract = "Experiments were conducted to study forced convection heat transfer in a small aspect ratio of multiple protruding heat sources in a horizontal channel with passive cooling. Perforated holes are arranged in the base of channel in a staggered manner in two rows between heat sources. Due to the increase of temperature between heaters, outside air is withdrawn naturally through the perforated holes. Effect of air entering through the perforated holes with different holes/open area ratios (β=0.0147, 0.0260, 0.0409, 0.0589 and 0.8017) on heat transfer characteristics is examined. It was found that the heat transfer coefficient was enhanced for all values of holes/open area ratio. Results also show that holes with β=0.0409 gives the best thermal performance for 376<Re<6170 while Gr=0.37×107 which are studied and the maximum enhancement in heat transfer is found to be 33.15% at Re=3428. The average Nusselt number and maximum dimensionless temperature are correlated as a function of the Richardson number (Gr/Re2) and the holes/open area ratio β."
}
@article{Janicki2000781,
title = "Modelling electronic circuit radiation cooling using analytical thermal model",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "781 - 785",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00059-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000598",
author = "M Janicki and A Napieralski",
keywords = "Heat equation",
keywords = "Circuit thermal model",
abstract = "This paper presents a thermal model of electronic circuit based on an analytical solution of the heat equation. In particular, the question of modelling circuit radiation cooling is discussed. The proposed model with temperature dependent heat exchange coefficient is applied for the analysis of an integrated circuit. Simulation results are validated with both infrared and p–n junction measurements."
}
@article{Kreutz2000787,
title = "Simulation of micro-channel heat sinks for optoelectronic microsystems",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "787 - 790",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00060-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000604",
author = "E.W Kreutz and N Pirch and T Ebert and R Wester and B Ollier and P Loosen and R Poprawe",
keywords = "Micro-channel heat sink",
keywords = "Laser diode",
keywords = "Micro-cooling system",
keywords = "Optoelectronic microsystem",
abstract = "Water-cooled heat sinks are investigated both experimentally and theoretically as model systems to simulate the energy and mass transport in devices used for cooling of optoelectronic microsystems. The design of the micro-channel heat sinks results in a decrease of their thermal resistance and of the pressure drop of the coolant allowing an increased heat load of an optoelectronic microsystem such as diode laser."
}
@article{Liew2000791,
title = "Modeling of thermal actuation in a bulk-micromachined CMOS micromirror",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "791 - 801",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00061-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000616",
author = "L.-A Liew and A Tuantranont and V.M Bright",
keywords = "MEMS",
keywords = "Micromirror",
keywords = "Multi-morph",
keywords = "Thermal analysis",
keywords = "Finite element analysis",
abstract = "In this paper, the thermal actuation characterisitcs of a novel Micro-Electro-Mechanical mirror fabricated in a standard CMOS process is presented. The micromirror consists of a plate suspended over a bulk-etched pit by four cantilever flexures, two of which are vertical thermal actuators. The thermal actuators consist in part of stacked layers of aluminum, silicon dioxide and polysilicon. The differences in thermal expansion coefficient (CTE) of these materials cause the flexures to curl when an ohmic heating from an input electrical power is applied. Due to a complex geometry, the actuators are not complete bimorphs, rendering use of bimorph theory alone inadequte in predicting the deflection. Analytical and finite element models verified by experiments were developed to predict and model the static deflection of the thermal actuator. The temperature distribution throughout the actuator and the mirror warpage were investigated."
}
@article{Bianchi2000803,
title = "CMOS-compatible temperature sensor with digital output for wide temperature range applications",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "803 - 810",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00062-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000628",
author = "R.A Bianchi and J.M Karam and B Courtois and R Nadal and F Pressecq and S Sifflet",
keywords = "Integrated temperature sensor",
keywords = "CMOS technology",
keywords = "Digital processing",
keywords = "Integrated microsystems",
abstract = "A CMOS process-compatible wide-range temperature sensor with a CMOS digital output is described. Concerning accuracy, a temperature error smaller than 0.25°C rms (with two second-order temperature compensations, an on-chip one and an externally trimmable one) is the measured performance of this integrated sensor, over the −50 to 150°C targeted temperature range.
Other important characteristics are the low cost, the less than 0.55 mW of power consumption and the duty-cycle modulated digital output signal, specially conditioned for on-chip digital signal processing or for a single-wire connection to an external processor. The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as automotive, space, oil prospect, and consumer."
}
@article{Székely2000811,
title = "Realization of an electronically controlled thermal resistance",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "811 - 814",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00063-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000063X",
author = "V Székely and A Nagy and S Török and G Hajas and M Rencz",
keywords = "Thermal resistance",
keywords = "Controlled thermal resistance",
keywords = "Peltier cell model",
keywords = "Active heat sink",
abstract = "The paper presents an electrical circuit model of a Peltier cell. With the help of this model the possibility of realizing an electrically controlled thermal resistance is presented. The idea is realized in the form of a constant thermal resistance provider mount. Measured results prove the accuracy of the model and the feasibility of the idea."
}
@article{Volz2000815,
title = "Computation of thermal conductivity of Si/Ge superlattices by molecular dynamics techniques",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "815 - 819",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00064-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000641",
author = "S. Volz and J.B Saulnier and G. Chen and P. Beauchamp",
keywords = "Si/Ge superlattices",
keywords = "Molecular dynamics (MD) technique",
keywords = "Thermal conductivity",
abstract = "The effective thermal conductivity of devices including superlattice structures like laser diodes is mostly governed by interface resistance. We carried out an atomic study to overcome the complexity of phonon-based models by using the molecular dynamics technique. We simulate multilayer configurations using the conjugate gradient method to minimise the structure energy. Results not using the conjugate gradient method are also presented. The cross plane heat flux and thermal conductivity are then deduced for both cases and the observed discrepancies are discussed."
}
@article{Zakrzewski2000821,
title = "Photoacoustic investigations of beryllium containing wide gap II–VI mixed crystals",
journal = "Microelectronics Journal",
volume = "31",
number = "9–10",
pages = "821 - 824",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00065-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000653",
author = "J. Zakrzewski and F. Firszt and S. Łęgowski and H. Męczyńska and B. Sekulska and J. Szatkowski and W. Paszkowicz",
keywords = "II–VI semiconductors",
keywords = "Mixed crystals",
keywords = "Beryllium chalcogenides",
keywords = "Photoacoustic",
abstract = "Mixed crystals of II–VI binary compounds with Be chalcogenides make it possible to tune band gap energies and lattice constants of these materials by adjusting Be content in the alloy. The reduced ionic character of chemical bonds in Zn1−xBexSe leads to increased lattice rigidity. For this reason, beryllium containing II–VI semiconducting compounds may offer the possibility of achieving a significant impact on the defect propagation and therefore increasing the laser structure lifetime.
The photoacoustic technique was used to investigate the properties of ZnxBe1−xSe mixed crystals as a function of composition. The Jackson–Amer model and Blonskij et al. method for piezoelectric detection were used to estimate the values of energy gaps and thermal diffusivities. An attempt to measure thermal diffusivity in liquid nitrogen temperature was made."
}
@article{Kuntman2000629,
title = "A study on dielectric properties of a new polyimide film suitable for interlayer dielectric material in microelectronics applications",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "629 - 634",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00067-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000677",
author = "A Kuntman and H Kuntman",
keywords = "Properties and characterization",
keywords = "Device technology",
keywords = "Materials systems",
abstract = "Interlayer dielectric film formation under Al wirings for VLSI and ULSI devices requires low temperature processing and high surface planarization capability. Polymers as a dielectric material play a significant role in achieving the current state-of-the art in microelectronics.
In this work, the dielectric properties of a new polyimide material suitable for microelectronics applications have been investigated. The polyimide was synthesized following the synthesis of 4,4′-bis(3-aminophenoxy)diphenyl sulfone (DAPDS), by nucleophilic aromatic substitution of 4,4′-dichlorodiphenyl sulfone with m-aminophenol, DAPDS/pyromellitic dianhydride (PMDA). Using this specific polyimide, a metal–polyimide–silicon (MIS) structure was manufactured to demonstrate the dielectric properties of the material. The properties of the MIS capacitance have been examined by deriving an electrical model of the MIS structure."
}
@article{Yun2000635,
title = "Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "635 - 639",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00066-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000665",
author = "Ilgu Yun and Kyung-Sook Hyun",
keywords = "Zinc diffusion",
keywords = "III–V compound semiconductor",
keywords = "Avalanche photodiode",
keywords = "Semiconductor manufacturing",
abstract = "The characterization of zinc diffusion processes for three different test structures has been investigated. The comparison between the different diffusion process conditions for different test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the amount of Zn3P2 source, the ampoule volume, and the diffusion time. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn3P2 source, the ampoule volume, and the diffusion time, as well as material parameters, such as doping concentration of the diffusion layer. These results from the Zn diffusion process can be utilized for the high-speed InP/InGaAs avalanche photodiodes fabrication."
}
@article{Lim2000641,
title = "A study on the poly-Si TFT and novel pixel structure for low flicker",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "641 - 646",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00046-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000046X",
author = "Kyoung Moon Lim and Ho Cheol Kang and Man Young Sung",
keywords = "Poly-Si TFT",
keywords = "Pixel",
keywords = "DC level shift",
keywords = "Redundancy",
abstract = "We propose a new pixel structure based on complementary 2-TFTs switching structure. This structure is capable of reduction of DC level shift by Cgs coupling and improvement of defect tolerance, so making large, high image quality TFT-LCD panel fabrication both easy and economical. The compensating characteristics for reducing DC level shift in complementary 2-TFTs switching architecture were investigated using a TFT equivalent model. However, the number of gate lines and TFTs doubles as compared with a fundamental structure without redundancy. To minimize this problem (reduction of aperture ratio), a new pixel structure called a complementary 2-TFTs structure, which has one contact hole, was proposed. This technology has a low hardware overhead and is very capable of redundancy for open circuit defects in a TFT-LCD panel."
}
@article{Koukab2000647,
title = "Improved bias–thermal-stress method for the insulator charge measurement of BN/InP MIS structures",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "647 - 651",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00045-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000458",
author = "A Koukab and A Bath and P Thévenin",
keywords = "III-V semiconductors",
keywords = "Interface state",
keywords = "Insulator charges",
keywords = "C–V characterisation",
keywords = "Bias–thermal-stress",
abstract = "A modified bias–thermal-stress method for insulator charge characterisation is described. The procedure is applied to optimise the deposition parameters of a boron-nitride (BN) insulator on an indium phosphide (InP) semiconductor. The deposition of the BN films is performed at low temperatures using a microwave plasma enhanced CVD system. A complete characterisation of both mobile and fixed charges in the BN films is performed and the methodology to verify the results is illustrated."
}
@article{Spassov2000653,
title = "Effects of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5–Si structures",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "653 - 661",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00044-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000446",
author = "D. Spassov and E. Atanassova and G. Beshkov",
keywords = "High dielectric constant insulators",
keywords = "Ta2O5",
keywords = "Rapid thermal annealing",
keywords = "Leakage current",
abstract = "The effect of rapid thermal annealing (RTA) in vacuum (1273 K) on the properties of thin thermal Ta2O5 films in dependence on the oxidation temperature (673–873 K) has been studied. It is established that the electrical and dielectric properties of the annealed layers are rather strong function of the oxidation temperature than of the film thickness. RTA reduces the leakage current of layers oxidized at 673 and 773 K and deteriorates the current for layers formed at 823 and 873 K—in both the cases the effect is stronger for shortest annealing time. The leakage current level after annealing of the lower-oxidation temperature layers is comparable with that of the as-grown high temperature oxidized films. The effect of RTA on the dielectric constant and fixed oxide charge is complex and there is not a simple relation with the leakage current behaviour—the annealing is not beneficial for fixed oxide charge in poorly oxidized films at 673 and 773 K. The results are discussed in terms of oxidation and crystallization effects during the annealing in the oxygen free ambient and their relation with the properties of the initial Ta2O5–Si structures."
}
@article{Gueorguiev2000663,
title = "Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "663 - 666",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00043-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000434",
author = "V.K Gueorguiev and Tz.E Ivanov and C.A Dimitriadis and S.K Andreev and L.I Popova",
keywords = "Silicon dioxide–polysilicon interface",
keywords = "Thin films",
keywords = "Reliability",
keywords = "Time-to-breakdown",
abstract = "Time-to-breakdown (tbd) of polysilicon/polyoxide/polysilicon structures is investigated on small and large area capacitors. The ln(tbd) versus 1/Eox projection lines are corrected by using an average oxide field enhancement factor for the interface polysilicon/thermally grown polyoxide. A field acceleration factor G≈320 MV/cm in the time-to-breakdown projection line is obtained. It is shown that the fast prediction of time-to-breakdown can be achieved with short stress time measurements in structures of different area."
}
@article{Yoon2000667,
title = "A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "667 - 676",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00040-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000409",
author = "S.F. Yoon and A.H.T. Kam and H.Q. Zheng and B.P. Gay",
keywords = "Channel thickness",
keywords = "GaAs substrate",
keywords = "Transconductance",
abstract = "The dc performance of a Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor (DH-pHEMT) grown on GaAs substrate has been simulated using a two-dimensional device simulator, to investigate the dependence of the intrinsic and extrinsic transconductance on the device channel thickness. The electron sheet concentration values for different channel thicknesses have been calculated using an analytical model, and correspond very well to Hall effect measurements of the electron mobility. Simulation results reveal that the optimum channel thickness for maximum intrinsic transconductance is between 80 and 100 Å, while there is no significant difference in the maximum extrinsic transconductance for channel thicknesses between 80 and 140 Å. This is due to a trade-off between electron sheet concentration and gate-to-channel separation. In addition, narrow channels give larger effective band gap due to energy quantization, which could contribute to an optimum design for Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMTs."
}
@article{Nicolau2000677,
title = "Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "677 - 683",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00014-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000148",
author = "D.V Nicolau and C Bercu",
keywords = "Glass transition temperature",
keywords = "Polymer broad band NMR",
abstract = "We propose a method for the monitoring of the glass transition temperature of the resists used in semiconductor lithography based on the broad-band nuclear magnetic resonance technique. The method is capable to trace the evolution of the mobility of several major chemical species present in a resist system versus processing parameters, e.g. exposure energy and bake temperature. The most important components, namely the lower molecular weight photoactive compound and the higher molecular weight base resin, were characterized, in accordance with their characteristic signals, as mobile and the rigid component, respectively. The method has the potential for being used for process optimization and for on-line monitoring."
}
@article{Han2000685,
title = "Surface field distribution and breakdown voltage of RESURF LDMOSFETs",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "685 - 688",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00012-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000124",
author = "S.-Y Han and H.-W Kim and S.-K Chung",
keywords = "Reduced surface field technique",
keywords = "Breakdown voltage",
keywords = "LDMOSFET",
abstract = "An approximate but analytical expression for the surface field distribution of RESURF LDMOSFETs is presented in terms of the device parameters and the applied drain voltage, which allows calculation of the breakdown voltage via the surface field as a function of the epitaxial layer length. Analytical results are in fair agreement with numerical simulations as well as experimental results reported."
}
@article{Raczkowycz2000689,
title = "Using a sigma–delta modulator as a test vehicle for embedded mixed-signal test",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "689 - 699",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00049-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000495",
author = "J Raczkowycz and P Mather and S Saine",
keywords = "Mixed-signal test",
keywords = "Sigma–delta modulator",
keywords = "Correlation",
keywords = "Impulse Response",
abstract = "An embedded mixed-signal test system that utilises a sigma–delta modulator as a vehicle to test analogue and digital embedded circuits is presented. A self-characterisation routine and simulation results relating to a behavioural sigma–delta model of the system will show how correlation analysis techniques can be used to evaluate the impulse response of a linear module under test (MUT) and how frequency and amplitude signal faults can be detected and accurately measured."
}
@article{Caggiano2000701,
title = "Electrical modeling of the chip scale ball grid array package at radio frequencies",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "701 - 709",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00047-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000471",
author = "M.F. Caggiano and E. Barkley and M. Sun and J.T. Kleban",
keywords = "Chip scale BGA",
keywords = "Micro BGA",
keywords = "Electrical packaging modeling",
keywords = "Skin effects",
keywords = "Radio frequency",
keywords = "SPICE modeling",
abstract = "The CSBGA package is targeted for the next generation of wireless systems, since this packaging technology occupies significantly less real estate than conventional packaging. The smaller packages not only accommodate the shrinking size of cellular phones but also contain lower parasitics, which reduces signal integrity losses. This innovative new software is targeted for the engineer who, at his desktop PC or workstation, can rapidly generate an accurate radio frequency (RF) electrical model of an entire Chip Scale BGA package. Program operation consists of entering the available data, and in just minutes, retrieving output that can be used in a SPICE circuit simulation. The focus of this work is on the frequency dependent parasitics in which the skin depth effects are modeled as additional circuit elements. Routines were developed to model the frequency dependant variable resistance and inductance with as few components as possible in order to reduce the complexity of the SPICE topology but still maintain accuracy. The program was designed to be fast and portable contrasting other methods of modeling in which such attributes were sacrificed for greater accuracy. Models of an entire 144 I/O package can be generated in less than 1 min on a SUN Ultra1 workstation. The models generated are targeted for RF systems having a wide range of use across military and commercial electronics applications."
}
@article{A2000711,
title = "Advanced electromagnetic analysis of passive and active planar structures: T. Rozzi and M. Farina; IEE publications, UK, 1999, pp. 264, £45.00, casebound, ISBN 0-852-96763-2",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "711 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00042-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000422",
author = "A and Saidane"
}
@article{A2000712,
title = "Analog and Mixed-Signal Boundary-Scan: A Guide to the IEEE 1149.4 Test Standard; A. Osseiran (Ed.); Kluwer Academic Publishers, Dordrecht, 1999, 155 pages, hardcover, ISBN 0-792-38686-8, £73",
journal = "Microelectronics Journal",
volume = "31",
number = "8",
pages = "712 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00068-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000689",
author = "A and Saidane"
}
@article{HB2000491,
title = "Introduction to the MICRO/MEMS 99 special issue",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "491 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00020-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000203",
author = "H.B and Harrison"
}
@article{Qu2000493,
title = "Modeling HEMT intermodulation distortion characteristics",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "493 - 496",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00021-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000215",
author = "G Qu and A.E Parker",
keywords = "High electron mobility transistors",
keywords = "Intermodulation distortion",
keywords = "Nonlinear capacitance models",
keywords = "HEMT",
abstract = "The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibit almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for the successful circuit simulation."
}
@article{Xu2000497,
title = "The study on a screening threshold for reliability estimation of optoelectronic coupled devices",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "497 - 501",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00022-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000227",
author = "J. Xu and D. Abbott and Y. Dai",
keywords = "Optoelectronic coupled devices",
keywords = "Excess noise",
keywords = "Device reliability and screening",
abstract = "According to noise sources of optoelectronic coupled devices (OCDs) and device reliability estimation method, a screening threshold is proposed for OCDs, which can be used to screen potential devices with excess noise, such as 1/f, g–r and burst noise. By this method, the device reliability can be improved and high reliability requirements can be met. The experimental results show that the method is of practical value."
}
@article{Mickan2000503,
title = "Analysis of system trade-offs for terahertz imaging",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "503 - 514",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00023-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000239",
author = "S. Mickan and D. Abbott and J. Munch and X.-C. Zhang and T. van Doorn",
keywords = "Terahertz",
keywords = "T-ray imaging",
keywords = "Optoelectronics",
keywords = "Wavelets",
abstract = "In this paper we analyse the trade-offs for a terahertz imaging system and discuss implementation of a terahertz micro antenna array for imaging. We also describe applications of terahertz imaging and improvements in the signal processing."
}
@article{Allison2000515,
title = "Some benefits of random variables in switched control systems",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "515 - 522",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00024-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000240",
author = "A. Allison and D. Abbott",
keywords = "Switched mode",
keywords = "Control",
keywords = "Random",
keywords = "Stochastic resonance",
abstract = "Recent advances in semiconductor technology have greatly increased the performance and range of application of switched mode circuits. Periodic switching can give rise to acoustic noise [Y.-S. Lai, Random switching techniques for inverter control, Electronics Letters 33 (9) (1977) 747–749] or undesirable electromagnetic radiation. These problems can be reduced through the use of random switching policies [S.Y.R. Hui, S. Sathiakumar, K.-K. Sung, Novel random pwm schemes with weighted switching decision, IEEE Transactions on Power Electronics 12(0885-8993) (1997) 945–951], but it is not always clear how this could be done without affecting other performance measures, such as RMS ripple or stability.
We use the buck/boost regulator as an example for analysis and determine some simple techniques for choosing appropriate component values. The circuit is simulated and it is shown that strict adherence to the formal limits of stability, suggested by control theory, does not always guarantee a satisfactory output.
We demonstrate that if switching is performed quickly enough then a state-space averaged model may be used for the buck/boost controller. This model is stable within wide bounds. It is possible to use some of this freedom to optimise EMC performance through the use of a control law which is random within certain limits.
In the popular mind, the idea of “randomness” seems to be completely opposed to the idea of “control.” We show that not necessarily the case. Some randomness can beneficial, from the point of view of minimising the maximum power spectral density of the noise waveforms in the output current. This can be done without compromising the stability of the system."
}
@article{Winchester2000523,
title = "Transferable silicon nitride microcavities",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "523 - 529",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00025-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000252",
author = "K Winchester and S.M.R Spaargaren and J.M Dell",
keywords = "Micro-electro-mechanical-systems",
keywords = "Silicon nitride",
keywords = "Microcavities",
abstract = "The ability to construct self-supporting or suspended structures is essential for many micro-electro-mechanical systems (MEMS). Well-established technologies exist for the fabrication of such structures using deposition of SiNx grown by low-pressure chemical vapour deposition (LPCVD). However, such techniques are not suitable for temperature-sensitive substrates. While lower process temperatures (<300°C) can be achieved through plasma-enhanced chemical vapour deposition (PECVD), restrictions may still be imposed on the order in which processing steps can occur, making difficult or even prohibiting the use of MEMS technology for semiconductor materials such as HgCdTe (MCT). A novel self-supporting SiNx membrane technology that can be applied to temperature-sensitive semiconductor devices has been developed. To demonstrate this technology, a microcavity structure was constructed on a reusable GaAs substrate. The structure was then removed and bonded via van der Waals forces to a new substrate."
}
@article{UmanaMembreno2000531,
title = "Anomalous drain current–voltage characteristics in AlGaN/GaN MODFETs at low temperatures",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "531 - 536",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00026-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000264",
author = "G.A Umana-Membreno and J.M Dell and L Faraone and Y.-F Wu and G Parish and U.K Mishra",
keywords = "GaN",
keywords = "AlGaN",
keywords = "Modulation-doped field effect transistor",
keywords = "Kink effect",
keywords = "Real space transfer",
keywords = "Defects",
keywords = "Negative differential resistance",
abstract = "This paper reports the observation of defect-related anomalous low temperature drain current–voltage characteristics in AlGaN/GaN modulation-doped field effect transistor (MODFETs). The study compares devices that have a relatively large number of lattice defects, generally referred to as nanopipes or nanotubes, in the vicinity of their active area to defect free devices. At low temperatures (T<210 K), the measured Ids–Vds characteristics of the devices with defects exhibit anomalous “kinks”. Such anomalous behaviour is not found in defect free devices even at low temperatures. We attribute the observed behaviour to trapping and thermally activated detrapping of charge injected into the AlGaN layer from the 2DEG via real space transfer (RST). The existence of these mechanisms indicates that device self-heating induced channel mobility degradation is not necessarily the sole mechanism for the negative differential resistance at high electric fields in AlGaN/GaN MODFETs."
}
@article{Musca2000537,
title = "Laser beam induced current as a tool for HgCdTe photodiode characterisation",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "537 - 544",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00027-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000276",
author = "C.A Musca and D.A Redfern and J.M Dell and L Faraone",
keywords = "Photodiode",
keywords = "LBIC",
keywords = "Infrared",
keywords = "HgCdTe",
keywords = "R0A",
keywords = "Focal plane array",
abstract = "A non-destructive optical characterisation technique is used for the investigation of Mercury Cadmium Telluride (HgCdTe) photovoltaic devices. The technique uses a scanning laser microscope to obtain Laser Beam Induced Current (LBIC) data from which it may be possible to extract information such as junction depth, array uniformity, and other material and device parameters. LBIC has been previously used only as a qualitative technique, but in this work the procedure is being developed into a quantitative tool. At present the only junction depth profiling techniques are destructive, while array uniformity can only be examined after bonding to readout circuits. In this paper we present both theoretical and experimental results which show that LBIC can be employed as a quantitative tool for device characterisation. The primary measure of performance of IR detectors is the zero bias dynamic resistance junction area product, R0A. LBIC measurements indicate that the peak LBIC signal varies by a factor of ≃2 for long wavelength infrared photodiodes for which the R0A varies between 70 Ω cm2 (acceptable for operation and the lower bound of typical values) and 8 Ω cm2 (unacceptable and typical for poor quality diodes)."
}
@article{Rais2000545,
title = "HgCdTe photovoltaic detectors fabricated using a new junction formation technology",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "545 - 551",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00028-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000288",
author = "M.H Rais and C.A Musca and J.M Dell and J Antoszewski and B.D Nener and L Faraone",
keywords = "HgCdTe",
keywords = "Photovoltaic",
keywords = "RoA product",
keywords = "1/f noise",
keywords = "Reactive ion etching",
keywords = "Semiconductors",
abstract = "The current–voltage characteristics measured over a wide temperature range are reported for HgCdTe mid-wavelength infrared n-on-p photodiodes fabricated using a novel junction formation technology. The planar homojunction device junctions were formed on LPE grown vacancy doped HgCdTe using a reactive ion etching (RIE) plasma induced conversion process. The zero bias dynamic resistance–junction area product, RoA, was 4.6×107 Ω cm2 at 80 K and is comparable to the best planar diodes reported using conventional ion implantation junction formation technology. Arrhenius plots of RoA exhibit an activation energy equal to the bandgap, Eg, and show that the diodes are diffusion limited for temperatures ≥135 K. A series of temperature dependent 1/f noise measurements were performed, indicating that the activation energy for 1/f noise in the region where the diodes are diffusion limited is 0.7Eg. Energies close to this value have previously been associated with Hg vacancies in HgCdTe. These results are similar to those obtained from high quality HgCdTe photodiodes fabricated using mature ion implantation technology. However, the plasma based technology used in this work is significantly less complex and does not require any high temperature annealing steps."
}
@article{Harmer2000553,
title = "Simulation of circuits demonstrating stochastic resonance",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "553 - 559",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00029-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000029X",
author = "G.P Harmer and D Abbott",
keywords = "Circuits simulation",
keywords = "Stochastic resonance",
keywords = "Nonlinear system",
abstract = "In certain dynamical systems, the addition of noise can assist the detection of a signal and not degrade it as normally expected. This is possible via a phenomenon termed stochastic resonance (SR), where the response of a nonlinear system to a subthreshold periodic input signal is optimal for some non-zero value of noise intensity. We investigate the SR phenomenon in several circuits and systems. Although SR occurs in many disciplines, the sinusoidal signal by itself is not information bearing. To greatly enhance the practicality of SR, an (aperiodic) broadband signal is preferable. Hence, we employ aperiodic stochastic resonance (ASR) where noise can enhance the response of a nonlinear system to a weak aperiodic signal. We can characterize ASR by the use of cross-correlation-based measures. Using this measure, the ASR in a simple threshold system and in a FitzHugh–Nagumo neuronal model are compared using numerical simulations. Using both weak periodic and aperiodic signals, we show that the response of a nonlinear system is enhanced, regardless of the signal."
}
@article{Qu2000561,
title = "Microfabrication and reliability study of sapphire based Ti/Pt-electrodes for thin-film gas sensor applications",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "561 - 567",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00030-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000306",
author = "W Qu and W Wlodarski and M Austin",
keywords = "Ti/Pt-electrode",
keywords = "Sapphire",
keywords = "Thin-film",
keywords = "Diffusion",
keywords = "Thermodynamic stability",
keywords = "Harsh environment",
keywords = "Ozone sensor",
abstract = "The paper describes the design, fabrication and characterisation of a Ti/Pt-electrode system (an interdigital electrode with an aligned heater) on a sapphire substrate. It serves as substrates for subsequent deposition of gas sensitive films. The fabrication has been accomplished on both sides of a sapphire wafer. Wet chemical etching and the lift-off method have, respectively, been used for structuring the electrode and the heater patterns. The mechanical stability and the electrical conductivity of the resultant Ti/Pt-films are greatly affected by the subsequent heat treatment procedures. The diffusion of titanium ions into platinum has been examined using SIMS depth profiles. After annealing at 600°C for 5 h, the temperature coefficient of the Ti/Pt-film stabilised at the value of 0.0033 K−1, which approaches the pure platinum bulk value of 0.0039 K−1. With a good mechanical and thermodynamical stability at high temperatures and under oxidising and reducing conditions, the sapphire based Ti/Pt-electrode system is well suited for gas sensor fabrication. As an example of its application, we report a highly sensitive O3 gas sensor developed by evaporating a WO3 thin-film onto this electrode."
}
@article{Qu2000569,
title = "A vertically sensitive accelerometer and its realisation by depth UV lithography supported electroplating",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "569 - 575",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00031-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000318",
author = "W Qu and C Wenzel and K Drescher",
keywords = "Accelerometer",
keywords = "Vertically sensitive",
keywords = "Differential-capacitive",
keywords = "UV-LIGA",
keywords = "Electroplating",
keywords = "Sacrificial layer",
abstract = "A vertically sensitive acceleration sensor has been fabricated by combining the low-cost UV-LIGA process with a sacrificial layer technique. The key structure of the sensor is an asymmetric proof-mass which is suspended over two stationary electrodes. Because of the asymmetric arrangement of the proof-mass, an acceleration in the Z-direction results in an opposite deflection of its large and small parts. Hence, the acceleration can be detected by the differential capacitor arrangement between the proof-mass and the two stationary electrodes. The fabrication of this vertically sensitive accelerometer is a planar batch procedure comprising only a few processing steps. The entire structures are first grown electrochemically within the UV-patterned thick AZ4562 photoresist on an electroplating base that composes of rigid (Cu) and sacrificial (Ti) layers. Movable Ni-parts are then obtained by removing the underneath titanium sacrificial layer using wet etching. Sensor structures up to 30 μm with an aspect ratio of about 10:1 can be reliably manufactured. It is thought that this fabrication approach can be widely applied to economically realise other micromechanical components with oscillating structures. Design and realisation of the vertically sensitive accelerometer is described in this paper."
}
@article{Celinski2000577,
title = "Novel extension of neu-MOS techniques to neu-GaAs",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "577 - 582",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00032-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000032X",
author = "P. Celinski and D. Abbott and S.F. Al-Sarawi and J.F. López",
keywords = "Neu-MOS",
keywords = "Neu-GaAs",
abstract = "The neuron-MOS (neu-MOS) transistor, recently discovered by Shibata and Ohmi in 1991 [T. Shibata, T. Ohmi, International Electron Devices Meeting, Technical Digest, 1991] uses capacitively coupled inputs onto a floating gate. Neu-MOS enables the design of conventional analog and digital integrated circuits with a significant reduction in transistor count [L.S.Y. Wong, C.Y. Kwok, G.A. Rigby, in: Proceedings of the 1997 IEEE Custom Integrated Circuits Conference, 1997; B. Gonzales, D. Abbott, S.F. Al-Sarawi, A. Hernandez, J. Garcia, J. López, in: Proceedings of the XIII Design of Circuits and Integrated Systems Conference (DCIS'98), 1998, pp. 62–66]. Furthermore, neu-MOS circuit characteristics are relatively insensitive to transistor parameter variations inherent in all MOS fabrication processes. Neu-MOS circuit characteristics depend primarily on the floating gate coupling capacitor ratios. It is also thought that this enhancement in the functionality of the transistor, i.e. at the most elemental level in circuits, introduces a degree of flexibility that may lead to the realisation of intelligent functions at a system level [T. Ohmi, T. Shibata, in: Proceedings of the 20th International Conference on Microelectronics, vol. 1, 1995, pp. 11–18]. This paper extends the neu-MOS paradigm to complementary gallium arsenide based on HIGFET transistors. The design and HSPICE simulation results of a neu-GaAs ripple carry adder are presented, demonstrating the potential for very significant transistor count and area reduction through the use of neu-GaAs in VLSI design. Preliminary simulations indicate a reduction of a factor of four in transistor count for the same power dissipation as conventional complementary GaAs. The small gate leakage is shown to be useful in eliminating unwanted charge build-up on the floating gate."
}
@article{Hall2000583,
title = "Sensor system for heart sound biomonitor",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "583 - 592",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00033-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000331",
author = "L.T Hall and J.L Maple and J Agzarian and D Abbott",
keywords = "Biomonitor sensors",
keywords = "Wavelets",
keywords = "Noise suppression",
abstract = "Heart sounds can be utilised more efficiently by medical doctors when they are displayed visually, rather than through a conventional stethoscope. A system whereby a digital stethoscope interfaces directly to a PC will be described along with signal processing algorithms adopted. The sensor is based on a noise cancellation microphone, with a 450 Hz bandwidth and is sampled at 2250 samples per second with 12-bit resolution. Further to this, we discuss for comparison a piezo-based sensor with a 1 kHz bandwidth. A major problem is that the recording of the heart sound into these devices is subject to unwanted background noise, which can override the heart sound and results in a poor visual representation. This noise originates from various sources such as skin contact with the stethoscope diaphragm, lung sounds (patient breathing), and other surrounding sounds such as speech. Furthermore we demonstrate a solution using ‘wavelet denoising.’ The wavelet transform is used because of the similarity between the shape of wavelets and the time-domain shape of a heartbeat sound. Thus coding of the waveform into the wavelet domain is achieved with relatively few wavelet coefficients, in contrast to the many Fourier components that would result from conventional decomposition. We show that the background noise can be dramatically reduced by a thresholding operation in the wavelet domain. The principle is that the background noise codes into many small broadband wavelet coefficients that can be removed without significant degradation of the signal of interest. Also explored is the use of a phase space representation of the heart sound to exploit different properties of the signal."
}
@article{AlSarawi2000593,
title = "Very high speed differential optoelectronic algorithmic ADC using n–i(MQW)–n SEED technology",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "593 - 604",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00034-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000343",
author = "S Al-Sarawi and N Burgess and W Marwood and P Atanackovic and D Abbott",
keywords = "Optoelectronic data converter",
keywords = "Very high speed data converter",
keywords = "Algorithmic data converter",
keywords = "Photonic data converter",
keywords = "SRT division",
abstract = "This paper describes the design of a very high speed optoelectronic analog digital converter based on a digital division algorithm called SRT division using n–i(MQW)–n Self Electro-Optic Effect Device (SEED) technology. The proposed structure is a pipeline ADC. The SRT algorithm was chosen because it provides a redundancy at each stage of the pipeline. The amount of redundancy is dependent on the radix of the SRT algorithm and the number set chosen. The relation between the SRT radix, number set and the division full range is given in this paper. Also a macro-model for the n–i(MQW)–n device was developed and used to simulate all the circuitry and algorithmic operations needed for the ADC. These included analog addition, analog subtraction and integer multiplication. Based on the developed macro-model and n–i(MQW)–n SEED circuit modules a basic unit of the algorithmic ADC was designed."
}
@article{Perkins2000605,
title = "Review of tradeoffs for quenched avalanche photodiode sensors for imaging turbid media",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "605 - 610",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00035-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000355",
author = "M.L Perkins and S.J Hill and S.P Mickan and D Abbott and J Munch and T van Doorn",
keywords = "Avalanche photodiode",
keywords = "Imaging",
keywords = "Single photon",
keywords = "Quenching",
keywords = "Laser",
abstract = "We evaluate the efficiency of a new optoelectronic quenched avalanche photodiode sensor (QAPD), with the potential of enabling high-resolution imaging through turbid media with femtosecond-lasers. Our target application is for imaging cancer in the human breast.
We aim to improve the contrast ratio of the unscattered, image bearing photons by reducing or removing the large background of multiply scattered photons that result in poor spatial resolution. The approach that we are taking is to use temporal discrimination: ultra-short (less than a picosecond) laser pulses and time gated detection can select only those photons which travel almost straight through the tissue. The feasibility of resolving a 1 mm structure in 50 mm turbid tissue sample, using our system, will be discussed—there are no results reported to date that approach this performance.
We aim to enhance the detection of short pulses through time resolved single photon counting technique. In this technique, the earliest arriving photon of the transmitted pulse is detected with a QAPD. When combined with an efficient electronic quenching circuit, the QAPD is insensitive to the later arriving diffuse photons. High accuracy and efficient measurement of the arrival time of the first photons is achieved by time to amplitude conversion electronics with a temporal resolution of 3 ps.
This paper contains a discussion of the laser source, detection circuit, including QAPD, high-speed comparator, critical biasing and intensity counter."
}
@article{Nicolau2000611,
title = "Nanotechnology at the crossroads: the hard or the soft way?",
journal = "Microelectronics Journal",
volume = "31",
number = "7",
pages = "611 - 616",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00036-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000367",
author = "D.E Nicolau and J Phillimore and R Cross and D.V Nicolau",
keywords = "Nanotechnology",
keywords = "Knowledge transfer",
keywords = "Knowledge production",
abstract = "The paper starts by looking at the competing paradigms in pursuing nanotechnology, namely the top–down approach originating from microelectronics, and the bottom–up approach inspired by biological sciences. This almost dogmatic dichotomy uncovers the challenges posed by interdisciplinary and transdisciplinary knowledge transfer. Several possible knowledge mechanisms are proposed using the analogy with the classical transfer phenomena theory, namely “diffusional”, “convective”, “turbulent”, “radiative” and “interphasic” transfer mechanisms. Furthermore, possible modes of knowledge production are outlined. These possible mechanisms for knowledge transfer and production are then analyzed in the context of micro-electro-mechanical systems and nanotechnology development. This analysis is extended to formulate a framework for facilitating knowledge transfer and production in nanotechnology."
}
@article{S2000389,
title = "GaAs/AlAs superlattices for detection of terahertz radiation",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "389 - 396",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00039-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000392",
author = "S. and Winnerl",
keywords = "Terahertz radiation",
keywords = "Superlattice",
keywords = "Miniband transport",
abstract = "This article gives a review on a novel superlattice detector for terahertz (THz) radiation. The detector was tested with the free-electron laser in the Netherlands. The detector is ultrafast (200 fs) and robust with respect to high laser power. The responsivity of the detector is superior compared to the detectors of comparable temporal resolution and robustness. Further, we developed a superlattice autocorrelator. Both the superlattice direct detector and the autocorrelator can be operated in a broad frequency band from microwave frequencies up to frequencies above 10 THz. The basis for the detection is the miniband transport in the superlattice"
}
@article{Ma2000397,
title = "Surface layer effective density-of-states (SLEDOS) and its applications in MOS devices modeling",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "397 - 403",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00041-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000410",
author = "Y. Ma and L. Liu and Z. Li",
keywords = "Surface potential effective density-of-states",
keywords = "Metal-oxide-semiconductor-field-effect-transistor",
keywords = "Maxwell–Boltzmann statistics",
abstract = "The concept of surface potential effective density-of-states (SLEDOS) is presented in modeling the quantized inversion layer. Carrier distribution models both in semi-classical and quantum mechanical cases are developed based on SLEDOS. Threshold voltage shift model due to QMEs, a new iteration method to calculate the inversion carrier sheet density and surface potential, as well as a gate capacitance model are built based on the concept of SLEDOS. It is demonstrated that the concept of SLEDOS reveals the physical nature of inversion layer quantization and provides a feasible method to characterize MOS inversion layer."
}
@article{Dwivedi2000405,
title = "Fabrication of very smooth walls and bottoms of silicon microchannels for heat dissipation of semiconductor devices",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "405 - 410",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00015-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626920000015X",
author = "V.K Dwivedi and R Gopal and S Ahmad",
keywords = "Microchannel fabrication",
keywords = "Heat dissipation",
keywords = "Semiconductor devices",
abstract = "In microchannel fabrication, smooth walls and bottom formation has been an uphill task during micromachining of (110) silicon due to its orientation-dependent chemical etching. A new method to fabricate deep microchannels on (110)-oriented silicon wafers for cooling excessive-heat dissipating semiconductor devices has been developed. Potassium hydroxide, water and isopropanol-based etchants have been used to etch silicon anisotropically for fabricating deep, narrow and smooth-walled microchannels. For etching U-grooved microchannels, (110)-oriented and 500–550 μm-thick monitor grade silicon wafers are used. Proper orientation of the pattern to be etched is aligned with reference to the standard flat provided in the wafer. A new method replacing conventional additional plane-finding etching procedure has been developed, where proper orientation is experimentally determined on the given wafer for pattern delineation. Very smooth walls and bottom of about 400 μm deep silicon microchannels have been obtained after controlling the etchant composition, temperature and orientation of the masking pattern. In this paper process details are presented along with experimental results. This process has further been used for separating the silicon microchannel chips."
}
@article{Lefort2000411,
title = "Thick film piezoresistive ink: effect of sintering under partial pressure of oxygen",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "411 - 417",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00013-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000136",
author = "M.-H. Lefort and V. Djafari and B. Jouffrey and Ch. Savary",
keywords = "Piezoresistivity",
keywords = "Sintering atmosphere",
keywords = "Type-p semiconductors",
keywords = "Ink",
keywords = "Thick film",
abstract = "The resistive and piezoresistive behaviour of the industrial inks investigated are sensitive to the partial pressure of the oxygen contained in the sintering atmosphere. We have shown that conductance increases with the percentage of oxygen contained in the sintering atmosphere, so the conductivity of the inks depends on their non-stoichiometry. The increase in the number of mobile charge carriers enhances the conductivity of the ink. The industrial inks investigated behave like type-p semiconductors and their conductivity obeys a power law of the type, σ=K′PO21/5. We also showed that the piezoresistive effect which is generally attributed to piezoresistivity variations due to the tunnel effect is also due to modifications in the stoichiometry of the inks, which varies as a function of the partial pressure of the oxygen contained in the sintering atmosphere."
}
@article{S2000419,
title = "Micro-Raman spectroscopy: a powerful technique for materials research",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "419 - 427",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00011-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000112",
author = "S and Jimenez-Sandoval",
keywords = "Raman spectroscopy",
keywords = "Optical properties",
keywords = "Semiconductors",
keywords = "Superconductors",
abstract = "Since the development of the holographic notch filters during the last decade and novel detectors such as charge coupled devices, Raman spectroscopy instrumentation has evolved rapidly, so that modern spectrometers are orders of magnitude faster, present much lower signal-to-noise ratio and simplified optics than their predecessors. These advances have also had a significant effect in the construction of novel micro-Raman-dedicated spectrometers that currently use lasers with powers of the order of a few tens of mW. In the present work, a brief overview of current Raman spectroscopy technology in traditional spectrometers and of different applications of modern micro-Raman spectroscopy to the study of materials, ranging from epitaxial semiconductor thin films of interest to the optoelectronics industry, to biomaterials of interest to medical science, is presented. An emphasis is given to different acquisition modes that are possible when the excitation laser light is passed through a microscope objective and the sample is placed in a computer controlled XY stage."
}
@article{MustredeLeón2000429,
title = "Local atomic environment of Cu:CdTe thin film alloys",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "429 - 431",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00010-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000100",
author = "J. Mustre de León and F.J. Espinosa and V.Antonio Pérez and S. Jiménez-Sandoval and S. López-López and P.A. Montano",
keywords = "Semiconductor alloys",
keywords = "Solar cells",
keywords = "Doping limits",
keywords = "Local atomic structure",
abstract = "We have used X-ray absorption spectroscopy of the K-edge of each element in a Cd0.85Cu0.15Te thin film to investigate the local atomic structure around each constituent element. X-ray absorption near edge spectra reveal that the local electronic structure around Cd and Te atoms is similar to that of undoped CdTe, while that of Cu is different from that encountered in Cu metal. X-ray absorption fine structure spectra show that while the Cd near neighbor environment is similar to that of undoped CdTe, the Te environment shows differences compared with that found in undoped CdTe, consistent with Cu entering substitutionally for Cd. The Cu nearest neighbor environment suggests the presence of Cu–metal ligands characteristic of Cu metal clusters. These results imply the occurrence of microscopic phase separation in this material in variance with X-ray diffraction results that show a single crystalline phase."
}
@article{SilvaCastillo2000433,
title = "Applications of the 45° reflectometry in the study of optical properties of confined semiconductor systems",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "433 - 438",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00009-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000094",
author = "A. Silva-Castillo and J. Madrigal-Melchor and F. Pérez-Rodrı́guez",
keywords = "Reflectivity",
keywords = "Phonons",
keywords = "Excitons",
keywords = "Surfaces",
keywords = "Thin films",
keywords = "Superlattices",
abstract = "We analyze the spectra of the 45° reflectometry, given by the difference Rp−Rs2 between the reflectivity for p-polarized light (Rp) and the squared reflectivity for s-polarized light (Rs2) at 45° angle of incidence, in both phonon and excitonic frequency ranges. It is shown that this spectroscopy can be useful for investigating quantized optical phonons in superlattices, and confined exciton–polaritons in thin films and near-surface transition layers."
}
@article{Rodrı́guez2000439,
title = "Long-range order–disorder transition in (GaAs)1−x(Ge2)x grown on GaAs(001) and GaAs(111)",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "439 - 441",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00008-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000082",
author = "A.G Rodrı́guez and H Navarro-Contreras and M.A Vidal",
keywords = "Order–disorder transition",
keywords = "High-resolution X-ray diffraction",
keywords = "(GaAs)1−x(Ge2)x",
abstract = "We have grown (GaAs)1−x(Ge2)x layers on GaAs substrates of both (100) and (111) orientations. High-resolution X-ray diffraction is used to study the zincblende–diamond transition. Our experiments show that the (GaAs)1−x(Ge2)x layers grown on (111) substrates do not present a long-range order–disorder transition for any Ge concentration (except for x=1). This fact gives the first reported evidence for the confirmation of Holloway and Davis theoretical prediction that the growth direction should have an influence in the long-range order parameter."
}
@article{Dı́azArencibia2000443,
title = "Photoluminescence properties of intra-well exciton migration in Zn1−xCdxSe quantum wells",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "443 - 450",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00007-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000070",
author = "P. Dı́az-Arencibia and I. Hernández-Calderón and L.M. Hernández-Ramı́rez and M.C. Tamargo",
keywords = "Photoluminescence",
keywords = "Exciton",
keywords = "Quantum well",
abstract = "We report the results of the investigation of the temperature dependence and the nature of the spontaneous excitonic emission of Zn1−xCdxSe QWs. The spectra are dominated by two main peaks, which show a strong change in relative intensities with temperature. The presence in the spectra of biexcitons and bound excitons was ruled out after the corresponding analyses. Calculation of the fundamental transitions of the QWs indicated that the peaks were due to thickness fluctuations of 1 and 2 monomolecular layers. The changes in the relative intensities of the two peaks in the photoluminescence spectra with temperature are attributed to exciton migration between QW regions differing in thickness one or two monomolecular layers (ML). The measured activation energy necessary for exciton migration, in order to establish thermal equilibrium as temperature increases, coincides with the energy difference of the exciton ground state of QWs with 1–2 ML thickness difference. The successful analysis of the spectra in terms of a simple two-level model indicated that localization of excitons due to QW thickness fluctuations and exciton migration are basic processes which have strong influence in the temperature dependence of the spontaneous emission of Zn1−xCdxSe QWs."
}
@article{Poon2000451,
title = "Study of thin gate dielectric films using deep level transient spectroscopy",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "451 - 458",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00152-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001524",
author = "Y.H Poon and H Wong",
keywords = "Thin gate dielectric films",
keywords = "Deep level transient spectroscopy",
keywords = "Hole trap distributions",
abstract = "This work studies the hole trap distributions at the thin oxide and nitrided-oxide interface using the Deep Level Transient Spectroscopy (DLTS) technique which was found to be not suitable for very thin oxide. By biasing the MIS capacitor at weak inversion, the fluctuation due to minority carrier capture is minimized and the weak DLTS signals in the thin-gate (16.8 nm) capacitors are recorded. The proposed weak inversion technique also provides a hint for probing hole trap distribution near the valence band edge. However, a large offset in the trap level is found and needed to be calibrated. It is found in re-oxidized insulator that the highest interface trap level is about 3.5×1012 eV−1 cm−2 over the lower half band while for that of the nitrided oxide, it is just above half of the value. In addition, the capture cross-section for the nitrided samples is found to be of similar magnitude as well as temperature dependent. This phenomenon suggests that the states are of similar nature. The trends of the capture cross-section for the three samples support the model of lattice relaxation multiphonon emission."
}
@article{Elwakil2000459,
title = "A low-voltage, low-power, chaotic oscillator, derived from a relaxation oscillator",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "459 - 468",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00150-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001500",
author = "A.S. Elwakil and M.P. Kennedy",
keywords = "Chaotic oscillator",
keywords = "Nonlinear resistor",
keywords = "Low-voltage",
keywords = "Low-power",
abstract = "A simple relaxation oscillator is designed by directly coupling a RC timing network to a passive S-shaped current-controlled nonlinear resistor and is then modified for chaos. The resulting chaotic oscillator inherits the main features of the relaxation oscillator, which are its low-power consumption and low-voltage operation from single or dual power supplies. These features are attributed to a simple two-bipolar-transistor passive nonlinear resistor. PSpice circuit simulations, experimental results and simulations of the derived mathematical models are included."
}
@article{Golan2000469,
title = "Novel sputtering method for Pd–Al2O3 UV transparent conductive coatings",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "469 - 473",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00148-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001482",
author = "G Golan and A Axelevitch",
keywords = "Thin film",
keywords = "Sputtering",
keywords = "UV transparent coatings",
keywords = "Pd–Al2O3",
abstract = "A thin film structure of Pd–Al2O3 was developed as a signal plate for ultraviolet (UV) vidicon television picture tubes. The Pd–Al2O3 films were deposited using a novel sputtering method. The 20 Å thick Pd layer served as a conducting plate while the 30–50 Å thick Al2O3 layer functioned as a transparent protective passivation film. The obtained signal plates had a sheet resistance of 2.5 kΩ and a transparency coefficient of 71% at a wavelength of 250 nm, which is suitable for near-UV applications. The main advantage of vidicons equipped with such signal plates is its less than 0.05 nA dark current."
}
@article{M2000475,
title = "High-Performance System Design: Circuits and Logic: Vojin Oklobdzija (Ed.); IEEE Press Series on Microelectronic Systems, New York, 1999, 537 pages, hardcover, IEEE Order No. PC 5765, ISBN 0-7803-4716-1, US$ 110",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "475 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00018-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000185",
author = "M and Stojčev"
}
@article{D2000475,
title = "Digital Transmission Engineering: J.B. Anderson (Ed.); IEEE Press, New York, 369 pages, hardcover, ISBN 0-7803-3457-4, US$ 74.99",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "475 - 476",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00019-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000197",
author = "D and Krstić"
}
@article{A2000476,
title = "Wireless multimedia network technologies: R. Ganesh et al. (Eds.); Kluwer Academic Publishers, Boston, 1999, 373 pages, hardcover, ISBN 0-792-38633-7, £90",
journal = "Microelectronics Journal",
volume = "31",
number = "6",
pages = "476 - 477",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00038-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000380",
author = "A and Saidane"
}
@article{Bensaoula2000311,
title = "Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 1",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "311 - 322",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00127-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001275",
author = "A.H. Bensaoula and I. Rusakova and A. Bensaoula",
keywords = "Stress analysis",
keywords = "Chemical beam epitaxy",
keywords = "X-ray diffraction",
abstract = "Strained layers superlattices are at the front of today's materials research. The potential use of strain to modify the electronic behavior of semiconductor compounds has opened new horizons for device engineers. However, the synthesis of these new materials poses new problems. Limitations imposed by dislocations creation threshold often hinder the viability of the obtained structures. Nonuniformity in strain distribution also leads to nonuniform, nonlocalized response functions in the devices thus obtained. These problems were at the origin of the later developed strain compensated superlattices. In this paper, we present a systematic study of one such structure grown by chemical beam epitaxy using high-resolution single and double crystal X-ray diffraction and transmission electron microscopy. Several samples grown under different conditions were examined and the strain induced effects on the structural and optoelectronic properties were determined in this study. Lattice mismatch was measured using {511} asymmetric and {400} symmetric X-ray reflection. The lattice misfit and the elastic strain were also calculated."
}
@article{Rusakova2000323,
title = "Stress analysis in strain compensated arsenide/phosphide superlattices grown by chemical beam epitaxy. Part 2",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "323 - 331",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00128-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001287",
author = "I.A Rusakova and A.H Bensaoula and A Fartassi and A Bensaoula",
keywords = "Epitaxy",
keywords = "Superlattice",
keywords = "Cathodoluminescence",
keywords = "Strain",
keywords = "Dislocations",
abstract = "The successful application of strained-layers based heterostructures for electronic and optoelectronic devices depends on a better understanding of strain-induced structural defects that lead to the deterioration of the materials’ electronic properties. We have previously reported the successful growth of strain compensated InP/GaAs/GaP/GaAs structures by chemical beam epitaxy. In this paper, we use similar structures grown on off-cut (001) GaAs substrates to investigate the dynamics of structural defects creation and propagation. Our results from high resolution X-ray diffraction (HRXRD), conventional and high resolution transmission electron microscopy (TEM and HRTEM) as well as cathodoluminescence (CL) techniques from samples grown on 2, 4, 6, 10, 12 and 14° (111)A misoriented GaAs (001) substrates are presented. The effect of post-growth thermal treatment on these strain balanced superlattices are also discussed."
}
@article{Djahli2000333,
title = "Modelling of submicronic MOSFET's ageing effects using spice",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "333 - 337",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00136-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001366",
author = "F. Djahli and M. Bouchemat and M. Kahouadji",
keywords = "Charge pumping",
keywords = "Submicronic MOSFET's",
keywords = "Ageing",
keywords = "Interface",
keywords = "Spice simulation",
keywords = "Modelling",
abstract = "In this work we develop a submicronic transistor model (narrow and short channel) to study MOSFET's ageing using the charge pumping technique. In this model, implemented in SPICE3F4, a majority of physical effects have been incorporated for the different functioning regions. They concern the reduction mobility effect, the carriers velocity saturation, the channel length modulation, the short channel effect, the threshold voltage variation with the reverse bias voltage (Vrev), and the distribution of the interface states. The results obtained are compared to other theoretical and experimental results."
}
@article{Kolev2000339,
title = "Thermal modelling of a porous silicon-based pellistor-type catalytic flammable gas sensor with two supporting beams",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "339 - 342",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00139-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001391",
author = "S.D Kolev and M Ádám and C Dücsö and I Bársony and C Cobianu and A van den Berg",
keywords = "Thermal model",
keywords = "Pellistor",
keywords = "Simulation",
abstract = "A three-dimensional transient thermal mathematical model of a porous silicon based pellistor with two supporting beams was developed. The model was numerically solved using the implicit alternating-direction finite difference method. A computer program written in ANSI C and run on a VAX/VMS computer was utilised to study the influence of the power consumption and the main geometrical dimensions (membrane, beam and heater size) of the pellistor mentioned above on its transient and steady-state thermal behaviour. It was found that considerable improvement in the thermal behaviour of the pellistor could be achieved by reducing the membrane size (length and width). The optimal beam length was determined as 100 μm. By comparing the main sources of energy dissipation it was found that energy was lost predominantly through the heat conduction into the supporting beams."
}
@article{Mikrajuddin|Shi2000343,
title = "Metal-to-semiconductor transition in nanocrystals: size and temperature dependence",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "343 - 351",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00144-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001445",
author = "Mikrajuddin and F.G Shi and T.G Nieh and K Okuyama",
keywords = "Nanocrystal",
keywords = "Electrical conductivity",
keywords = "Metal-to-semiconductor transition",
keywords = "Size dependence",
keywords = "Temperature dependence",
abstract = "The electrical conductivity of nanocrystals is investigated by using a hybrid approach that treats the electronic structure of a nanocrystal quantum mechanically, and the transport of electrons semiclassically. The simplicity and its analytical nature of the present approach allow one to gain unique insights into the size dependent metal-to-semiconductor transition in nanocrystals. The analytical expression for the electrical conductivity of nanocrystals as a function of size and temperature demonstrates that for a given temperature, there is a critical size at which the metal-to-semiconductor transition occurs which decreases with increasing temperature. For a given sized nanocrystal, a critical temperature for the occurrence of the metal-to-semiconductor transition is also demonstrated. The critical transition temperature is found to decrease with the increasing nanocrystal size. Although the predicted size and the temperature dependence of electrical conductivity for nanocrystals is shown to be remarkably consistent with the recent experimental observations, the effect of the size distribution of nanocrystals must be further investigated."
}
@article{Roenker2000353,
title = "Dynamic formation of a parasitic barrier to electron flow in SiGe HBTs operating at high current densities",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "353 - 358",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00153-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001536",
author = "K.P. Roenker and P. Mushini",
keywords = "Parasitic barrier",
keywords = "Electron flow",
keywords = "Heterojunction bipolar transistors",
abstract = "The formation of a parasitic barrier to electron flow at the collector–base junction in SiGe heterojunction bipolar transistors during device operation at high current densities is analyzed. Due to the valence band discontinuity at the base–collector junction, hole injection into the collector at the onset of base pushout is blocked. Hole accumulation occurs at the collector end of the base inducing electron pile-up nearby in the collector and formation of a parasitic field and potential barrier to electron flow. This analysis takes into account the device physics of the electric field and carrier profiles in the vicinity of the collector junction and the closely related base pushout phenomenon to obtain an improved description of barrier formation and its dependence on device structure and current density. Also calculated is the corresponding electron buildup at the collector end of the quasi-neutral base that produces a degradation in base transport and device performance."
}
@article{Dermoul2000359,
title = "Drain-current DLTS study of an GaAs/InP MESFET",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "359 - 363",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00154-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001548",
author = "I Dermoul and A Kalboussi and F Chekir and H Maaref",
keywords = "Drain-current deep-level transient spectroscopy",
keywords = "GaAs/InP",
keywords = "Metal–semiconductor field-effect-transistor",
abstract = "Fast GaAs Metal–Semiconductor Field-Effect-Transistor (MESFET) on InP exhibiting promising performances comparable to those grown on GaAs subtrates have already been fabricated. The lattice mismatch of 4% between GaAs and InP did not preclude device fabrication, although the characterization of such materials has shown the existence of high dislocation density at the interface and a residual biaxial tensile strain due to the difference between the thermoelastic properties of the two materials. The above-mentioned growth difficulties can generate many defects, which are very detrimental for device application. In this context, we have investigated deep levels on Rapid Thermal Annealed (RTA) GaAs/InP MESFET by means of Drain-Current Deep-Level Transient Spectroscopy (CDLTS). In this study, we have revealed the absence of dislocation-generated-deep level, the formation of an apparent “hole-like” observed for the first time with an activation energy of 0.3 eV. On comparison with homo-epitaxial GaAs MESFET achieved under the same conditions, we note the absence of a deep level with an apparent activation energy of 0.4 eV."
}
@article{Ng2000365,
title = "ECRL-based low power flip-flop design",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "365 - 370",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00006-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000069",
author = "K.W. Ng and K.T. Lau",
keywords = "Efficient charge recovery logic",
keywords = "Adiabatic circuits",
keywords = "SR flip-flop",
keywords = "JK flip-flop",
abstract = "The efficient charge recovery logic (ECRL) is reported as a promising candidate for low-power applications. However, in the design of digital systems, essential building blocks such as the flip-flops cannot be neglected. In this paper, adiabatic switching or energy recovery technique is used in the design of low-power flip-flops. In particular, SR and JK flip-flop designs based on the ECRL architecture are proposed. From the HSPICE simulation results, these adiabatic flip-flops have shown significant improvement in terms of power consumption over their CMOS counterparts. In addition, the design of an adiabatic sequential circuit is illustrated using the example of a 4-bit binary counter."
}
@article{Stojcev2000371,
title = "Logic and Computer Design Fundamentals: M. Mans, C. Kime; Prentice Hall, Inc., Upper Saddle River, NJ, 07458, 2000, 2nd ed., 652 pages paperbound, CD ROMs included, ISBN 0-13-016176-4, US$ 48.99",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "371 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00005-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000057",
author = "M Stojcev and N Stojadinovic"
}
@article{M2000371,
title = "Verilog Digital Computer Design: Algorithms into Hardware: M.G. Arnold; Prentice Hall PTR, Upper Saddle River, NJ 07458, 1999, 602 pages, hardcover, ISBN 0-13-639253-9, US$ 48.99",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "371 - 372",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00004-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000045",
author = "M and Stojcev"
}
@article{M2000372,
title = "High performance cluster computing, Vols. I & II: Rajkumar Buyya (Ed.); Prentice Hall PTR, Upper Saddle River, NJ, 1999, hardbound. Vol. I: 849 pages, ISBN 0-13-013784-7, US$ 55.50; Vol. II: 664 pages, ISBN 0-13-013785-5, US$ 55.50",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "372 - 373",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(00)00002-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269200000021",
author = "M and Stojcev"
}
@article{M2000373,
title = "Design-For-Test for Digital ICs and Embedded Core Systems: Alfred L. Crouch; Prentice-Hall, Upper Saddle River, NJ, 349 pages, hardbound, ISBN 0-13-084827-1, CD ROM included (US$ 80.50)",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "373 - 374",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00157-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001573",
author = "M and Stojcev"
}
@article{M2000374,
title = "Distributed Operating Systems: Concepts and Practice: Doreen L. Gali; Prentice-Hall, Upper Saddle River, NJ, 2000, 464 pages, hardbound, ISBN 0-13-079843-6 (US$ 80)",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "374 - 375",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00156-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001561",
author = "M and Stojcev"
}
@article{M2000375,
title = "Computer Organization and Architecture: William Stallings; Prentice-Hall, Upper Saddle River, NJ, 2000, 5th ed., paperback, 748 pages, ISBN 0-13-089263-5 (US$ 70.00)",
journal = "Microelectronics Journal",
volume = "31",
number = "5",
pages = "375 - 376",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00155-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900155X",
author = "M and Stojcev"
}
@article{Lau2000235,
title = "IAPDL-based low-power adiabatic programmable logic array",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "235 - 238",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00105-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001056",
author = "K.T Lau and F Liu",
keywords = "Adiabatic pseudo-domino logic",
keywords = "Programmable logic array",
keywords = "HSPICE",
abstract = "A novel low power programmable logic array structure based on adiabatic switching is presented. Simulation results using HSPICE with 0.8 μm technology designs show that the power savings of the proposed adiabatic programmable logic array (PLA) circuit is up to 60%, compared to the dynamic PLA circuit. Compared to APDL (Adiabatic Pseudo-Domino Logic) PLA, the power saving is about 15% and the device count savings is about 20%. The power saving is improved further at lower supply voltages. At 2 V Vdd and 200 MHz clock frequency, the power saving is about 25% compared to APDL PLA. Compared to static PLA, the power saving is even more significant. HSPICE simulations also show that the proposed PLA can function correctly up to 1 GHz at 5 V Vdd, and the supply voltage can be scaled down to 2 V at 200 MHz."
}
@article{Almashary2000239,
title = "Current-mode triangular wave generator using CCIIs",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "239 - 243",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00106-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001068",
author = "B Almashary and H Alhokail",
keywords = "Current conveyor",
keywords = "Triangular-wave generator",
keywords = "Current-mode circuits",
abstract = "A current-mode triangular wave generator circuit using two positive second-generation current conveyors (CCII+) is proposed and implemented. The circuit consists of an astable multivibrator to generate a square wave followed by an integrator. The analytical formulas for the frequency and the amplitude are derived, the circuit is simulated using PSPICE, and AD844 IC is used for the circuit implementation. Comparison between the measured and calculated frequencies shows a good agreement. Compared to either a recently reported current-mode generators or conventional voltage-mode generators, the circuit works over a wider range of frequencies with a maximum frequency of 410 kHz which is achieved by tuning a grounded capacitor. In addition, the circuit features an independent control of its oscillation frequency from the signal amplitude using grounded elements."
}
@article{Kuntman2000245,
title = "Actively simulated grounded lossy inductors using third generation current conveyors",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "245 - 250",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00108-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001081",
author = "H. Kuntman and M. Gülsoy and O. Çi̇çekoğlu",
keywords = "Lossy series inductor",
keywords = "Third-generation current conveyors",
keywords = "Simulation result",
abstract = "In this paper five lossy inductor topologies employing a single third generation current conveyor a capacitor and resistors are presented. The proposed topologies require few passive components and no element matching conditions are necessary. Four different topologies for lossy series inductor and one topology for lossy parallel inductor are proposed. For the topologies the inductance L and the conductance G are independently adjustable. Applications of the proposed circuits are shown. Simulation results are included to verify theory."
}
@article{deSouza2000251,
title = "Measurement of optical constants of thin a-C:H films",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "251 - 254",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00111-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001111",
author = "D.R de Souza and L.L Soares and L Cescato and M.A.R Alves and E.S Braga",
keywords = "a-C:H films",
keywords = "Optical constants",
keywords = "Optical measurements",
abstract = "Amorphous hydrogenated carbon films (a-C:H) are very interesting materials for optical applications. They are transparent in the near IR part of the spectrum and its refractive index and absorption coefficient may be changed with the deposition parameters. In this paper we measure the optical constants of a-C:H films, deposited by plasma enhanced chemical vapor deposition as a function of the radio frequency power. The measurements were performed by the method of Abelès in λ=633 nm and by the approximation of Lambert–Beer in the transmission measurements using a spectrophotometer. Both methods do not require the use of thick films that are difficult to deposit due to the intrinsic stress of these films. The measurements were compared with that obtained by the fringe peaks in transmission measurements of a thick film. Our results showed that it is possible, in our system, to deposit homogeneous and uniform films with any refractive index chosen between 1.8 and 2.2 at λ=633 nm."
}
@article{Rajendran2000255,
title = "A simple modelling of device speed in double-gate SOI MOSFETs",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "255 - 259",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00112-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001123",
author = "K Rajendran and G Samudra",
keywords = "Double-Gate SOI MOSFET",
keywords = "Transconductance",
keywords = "Device speed",
keywords = "Analytical model",
abstract = "A new simple and accurate model for device speed is proposed for the first time in Double-Gate SOI MOSFETs. Simulation studies are done with physical and electrical parameters. Experimental results are compared with the results predicted by the analytical model and good agreement is seen. A record maximum value of transconductance in DG-SOI MOSFETs is achieved (1350 ms/mm at Lg=0.05 μm and Tsi=50 nm). It has been observed analytically that device speed higher than 1×107 cm/s is possible in DG-SOI MOSFETs at a lower silicon thickness and substrate concentration at Lg≤0.35 μm by appropriate modelling of parameters."
}
@article{Mikrajuddin|Shi2000261,
title = "Electrical conduction in solid polymer electrolytes: temperature dependence mechanism",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "261 - 265",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00138-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900138X",
author = "Mikrajuddin and F.G. Shi and T.G. Nieh and K. Okuyama",
keywords = "Arrhenius",
keywords = "VTF",
keywords = "Fluctuation",
keywords = "Melting point",
keywords = "Critical temperature",
abstract = "It is generally accepted that the electrical conduction in solid polymer electrolytes (PE) is strongly temperature dependent: an Arrhenius dependence is observed at low temperatures, while a non-Arrhenius Vogel–Tamman–Fulcher (VTF) behavior is seen at high temperatures. A theory is introduced, for the first time, for the electrical conduction of solid PE in the entire range of temperatures, by considering the fluctuation of the melting temperature and by the application of the statistical theory of gelation. The theory contains the expected Arrhenius and VTF dependence as the asymptotic limits at low and high temperatures, respectively. In addition, a critical transition temperature at which the electrical conductivity behavior changes from Arrhenius-like to VTF-like is determined analytically. This critical temperature is shown to increase linearly with the melting point of the PE. It is demonstrated that the theoretical results are in good agreement with the experimental evidence."
}
@article{Prokhorov2000267,
title = "Nonmonotony of the extrinsic photoconductivity of n-type GaAs thin-film structures under backgating",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "267 - 269",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00141-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900141X",
author = "E.F Prokhorov and N.B Gorev and I.F Kodzhespirova and Y.A Kovalenko",
abstract = "The extrinsic photoconductivity of an n-type GaAs thin-film structure under backgating has been studied. It is shown that this photoconductivity is a nonmonotonic function of negative substrate voltage, namely, the magnitude of the photoconductivity shows a maximum. This is due to a sharp increase in the magnitude of the photoconductivity caused by an illumination-induced change in the backgating threshold voltage and to its subsequent decrease caused by the accumulation of excess carriers near the film–substrate interface. The calculated results are in a qualitative agreement with the experimental data."
}
@article{Hsu2000271,
title = "Curing kinetics and optimal cure schedules for underfill materials",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "271 - 275",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00143-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001433",
author = "D.T Hsu and H.K Kim and F.G Shi and H.Y Tong and S Chungpaiboonpatana and C Davidson and J.M Adams",
keywords = "Flip chip",
keywords = "Underfill",
keywords = "Curing",
keywords = "Packaging",
keywords = "Reliability",
keywords = "Glass transition",
abstract = "The curing reactions and optimal schedules of three promising flip-chip underfill materials under isothermal and nonisothermal treatments are reported. It is found that curing reactions for three-tested underfill materials are autocatalytic, and the cure rate can be well described by the corresponding model. The activation energy, the rate constants, as well as two reaction orders m and n are determined to describe the curing progress. The temperature dependence of the cure degree for each heating rate is also investigated. It is found that the extent of reactions at a given temperature is a function of the heating rate. The glass transition temperature for the underfill UF-II is determined as a function of cure degree. It is found that the glass transition temperature increases with the cure time."
}
@article{Ravezzi2000277,
title = "A versatile photodiode SPICE model for optical microsystem simulation",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "277 - 282",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00145-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001457",
author = "L Ravezzi and G.-F Dalla Betta and D Stoppa and A Simoni",
keywords = "SPICE model",
keywords = "Position sensing detectors",
keywords = "Eldo simulation",
abstract = "We report on the definition and the implementation in ANACAD Eldo simulator of a photodiode circuit macro-model to be used in the design of optical smart sensors such as position sensing detectors (PSDs) and digital cameras. The optical power waveform as well as its spectrum can be easily defined by the user, allowing for a high flexibility of the model. The effectiveness of the proposed macro-model is highlighted by comparing Eldo simulation results with both numerical device simulation results and experimental data."
}
@article{Chaturvedi2000283,
title = "Selectivity and sensitivity studies on plasma treated thick film tin oxide gas sensors",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "283 - 290",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00147-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001470",
author = "A Chaturvedi and V.N Mishra and R Dwivedi and S.K Srivastava",
keywords = "Plasma treatment",
keywords = "Tin oxide",
keywords = "Stoichiometry",
abstract = "This paper deals with selectivity and sensitivity studies on plasma treated tin oxide thick film gas sensors. Response of oxygen, hydrogen, nitrogen and argon plasma treated sensors has been studied upon exposure to CCl4, C3H7OH, CO, LPG, N2O and CH4. It is observed that the sensitivity of sensors treated in various gaseous plasma is much higher at room temperature in comparison to untreated sensors. The selectivity of these sensors also improves upon plasma treatment, specifically, hydrogen plasma treated sensor becomes sensitive to CO. Also, the XRD characterization of SnO2 has been carried out with respect to various plasma treatments. The structural changes obtained on plasma treatment have been analysed in terms of stoichiometric variations in tin oxide using the ionic conduction model and a thus better explanation for sensitivity of plasma treated sensors have been provided."
}
@article{M2000291,
title = "Semiconductors lasers: fundamentals/semiconductors lasers: materials and structures; E. Kapon (Ed.); Academic Press, New York, ISBN 0-12-397630-8/ISBN 0-12-397631-6, US$79.95 each",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "291 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00115-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001159",
author = "M and Henini"
}
@article{M2000291,
title = "Computer Speech Technology; Robert D. Rodman; Artech House, 1999, 344 pages, hardcover, ISBN-0-89006-297-8, US$ 47.00",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "291 - 292",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00116-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001160",
author = "M and Milosevic"
}
@article{A2000292,
title = "The Physics of Low-dimensional Semiconductors: An Introduction; J.H. Davies, Cambridge University Press, UK, ISBN 0-521-48491-X, $44.95",
journal = "Microelectronics Journal",
volume = "31",
number = "4",
pages = "292 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00142-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001421",
author = "A and Saidane"
}
@article{Cardarilli2000153,
title = "Low-power CMOS OTA input stages and voltage buffers based on adaptive biasing topology",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "153 - 159",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00109-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001093",
author = "G.-C Cardarilli and G Ferri and M Re",
keywords = "Low-voltage low-power input stages",
keywords = "Low-power biasing topologies",
keywords = "Spice simulation",
abstract = "In this article, a new CMOS low-voltage (1.8 V) low-power (80 μW) operational transconductance amplifier input stage is described. This is based on class-AB adaptive biasing topology presented in the work by Cardarilli (G. Cardarilli, G. Ferri, M. Re, Microelectronics Journal 30(3) (1999) 223–228), which allows us to decrease quiescent power consumption without degradation of transient characteristics. In fact its slew rate is about 45 V/μs, for a 1 pF capacitive load. The main adaptive biasing topology is also used to realize a low-voltage (1.5 V) low-power (0.89 μW) high slew rate (168 V/μs) rail-to-rail voltage buffer. Spice simulations, demonstrating the validity of the proposed technique, are presented."
}
@article{Ashour2000161,
title = "An FPGA implementation guide for some different types of serial–parallel multiplier structures",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "161 - 168",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00110-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900110X",
author = "M.A Ashour and H.I Saleh",
keywords = "Digital signal processing (DSP)",
keywords = "Serial–parallel multiplier",
keywords = "Field programmable gate array (FPGA)",
abstract = "The multiplier is one of the most important components in the computing and reconfigurable computing systems, especially in the field of digital signal processing (DSP). Hence, in this paper, a performance evaluation and comparison (efficient area and moderate speed) for different serial–parallel multiplier structures have been carried out for the case of their implementation by one of the programmable logic devices, such as a field programmable gate array (FPGA). The implementation of these structures for 8-bit parallel operands has been executed by utilizing the XC4010E chip and Foundation software package V1.3 from Xilinx. The implementation results illustrate the progress in the design area, saving and speeding up the design performance."
}
@article{Özcan2000169,
title = "Single resistance-controlled sinusoidal oscillators employing current differencing buffered amplifier",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "169 - 174",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00113-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001135",
author = "S. Özcan and A. Toker and C. Acar and H. Kuntman and O. Çiçekoģlu",
keywords = "Current differencing buffered amplifier",
keywords = "Single resistance-controlled oscillators",
keywords = "Voltage-controlled oscillators",
abstract = "The basic aim of this paper is to present several of a newly introduced current differencing buffered amplifier (CDBA)-based oscillator topologies achieving orthogonal control of oscillation condition b and oscillation frequency ω0 with a reduced number of components. A single resistor is used for adjusting their frequency, and further, this resistance is grounded, which is important from the integration point of view. Taking these considerations into account they are very suitable for voltage-controlled oscillator (VCO) implementation."
}
@article{Qin2000175,
title = "The Kirk effect in the DELDI technology",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "175 - 185",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00119-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001196",
author = "Z. Qin and E.M. Sankara Narayanan and M.M. De Souza",
keywords = "Junction isolation technology",
keywords = "Kirk effect",
keywords = "Dielectric isolation",
abstract = "In this paper, for the first time, the influence of the Kirk effect on the on-state performance of a Lateral Insulated Gate Bipolar Transistor (LIGBT) in the Double Epitaxial Layer Dielectric Isolation (DELDI) technology is presented. Unlike Junction Isolation (JI) or dielectrically isolating (DI) technologies, due to confinement of carriers within a thin pseudo-substrate, the Kirk effect plays a vital role in the enhancement of the on-state performance of a MOS-Bipolar device such as the LIGBT in the DELDI technology. Furthermore, the influence of the Kirk effect on the lateral isolation of devices has also been evaluated under static conditions."
}
@article{Mikrajuddin|Shi2000187,
title = "Electrical conduction in porous silicon: temperature dependence",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "187 - 191",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00126-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001263",
author = "Mikrajuddin and F.G Shi and K Okuyama",
keywords = "Arrhenius relationship",
keywords = "Si nanocrystals",
keywords = "Electrical conduction",
abstract = "The temperature dependent conduction of electrons in a porous silicon film is theoretically investigated by using the fact that the electrical conduction is closely related to the formation of a continuous network of the conducting Si nanocrytallites. For the first time, an analytical expression for the electrical conductivity of porous silicon has been obtained, which demonstrates that the overall temperature dependence of electrical conductivity cannot be described by a single Arrhenius relationship, and there is a change in the electrical transport mechanism at a critical temperature Tc. The critical temperature Tc and the activation energy are found to be dependent on the mean size of Si nanocrystals as well as their size distribution. The present results are supported by several recent experimental observations."
}
@article{Benfdila2000193,
title = "Substrate current model in pulsed MOS devices",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "193 - 197",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00129-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001299",
author = "A Benfdila and A Chikouche",
keywords = "Substrate current model",
keywords = "Pulsed MOS devices",
keywords = "Si/SiO2 interface",
keywords = "Oxide traps",
keywords = "Capture cross-section",
keywords = "Emission theory",
abstract = "The present paper describes a frequency-dependent substrate current model generated in an nMOS device in the form of diode or transistor when pulsed by a train of square wave pulses. The proposed model is based on the theory of carrier capture and emission from the oxide traps and the interface states of the MOS system.
The substrate current is measured under appropriate experimental conditions of biasing and pulsing. It has been found that this current is positive and of a typical behavior when it is plotted with respect to gate signal frequency variation. The overall current versus frequency shape is identical for different gate voltage amplitudes and different types of experimental devices. The current behavior has been studied for different amplitudes and critical frequencies; it has been found that it can be used for the electrical characterization of the silicon dioxide and silicon/silicon dioxide interface.
The theoretical model is found to suite globally the gate current behavior that has been observed experimentally."
}
@article{Gómez2000199,
title = "On the design and fabrication of novel lateral bipolar transistor in a deep-submicron technology",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "199 - 205",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00134-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001342",
author = "R Gómez and R Bashir and G.W Neudeck",
keywords = "Lateral bipolar transistor",
keywords = "Silicon-on-insulator device",
keywords = "Submicron technology",
keywords = "Large-angle implant",
abstract = "The performance of a npn Lateral Bipolar Transistor (LBJT), based on a minimally modified submicron MOSFET without gate oxide, was studied by means of simulations and measurements on fabricated devices. Large-tilt angle, single-sided implants were successfully used to control the breakdown voltage by tailoring an asymmetric collector doping profile and providing a lightly doped region on the collector side to increase the breakdown voltage. This was accomplished by using a base/gate pedestal as the mask for the large-tilt angle, single sided implantation in a self-aligned fashion. The individual collector–base and emitter–base junctions were found to be of excellent quality but, as expected due to the lack of carrier confinement in the base of devices built on bulk silicon, the common emitter current gain was lower than one. Two options enhancing the device performance were studied using simulators: building the LBJT on Silicon-on-Insulator (SOI) or introducing SiGe into the base. The SOI device promises to provide better performance and ease of processing when compared to the SiGe base device."
}
@article{Gueorguiev2000207,
title = "Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "207 - 211",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00137-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001378",
author = "V.K Gueorguiev and Tz.E Ivanov and C.A Dimitriadis and L.I Popova and S.K Andreev",
keywords = "Electron trapping probabilities",
keywords = "Silicon dioxide–polysilicon interface",
keywords = "Electron capture cross section",
abstract = "Fowler–Nordheim tunneling currents in hydrogen ion implanted and as-grown SiO2 films, thermally grown on polycrystalline silicon(polysilicon), have been investigated. The ion implantation is performed through the SiO2 films for hydrogenation of the grain boundary states in the polysilicon layer on which the SiO2 is grown. A model of Groeseneken and Maes is used to include in the calculations the field enhancement caused by asperities at the SiO2–polysilicon interface. The oxide field reduction, caused by electron capture in initially neutral electron traps into the SiO2, is also modeled. Electron trapping probabilities, defined as the product of the bulk electron trap density in SiO2 and the electron capture cross section of the traps are determined in both as-grown and hydrogen ion implanted oxides. In the hydrogen ion implanted oxides electron trapping probabilities higher than three orders of magnitude are obtained. Native electron traps in the as-grown oxides with capture cross section of the order of 10−20 cm2, as well as ion implantation generated electron traps with capture cross section of the order of 10−18 cm2 are deduced from the calculated trapping probabilities."
}
@article{Balachova2000213,
title = "CF4 plasma etching of materials used in microelectronics manufacturing",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "213 - 215",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00140-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001408",
author = "O.V Balachova and M.A.R Alves and J.W Swart and E.S Braga and L Cescato",
keywords = "Plasma etching",
keywords = "Hydrogenated carbon",
keywords = "Organic photoresist",
keywords = "Selectivity",
abstract = "Amorphous hydrogenated carbon a-C:H films, deposited on silicon substrates by radio frequency plasma-enhanced chemical vapor deposition (RF PECVD), and AZ® 5214 organic photoresist have been etched in a low-pressure and high frequency tetrafluoromethane (CF4) plasma. The etching of Si and SiO2 was also measured in order to determine their selectivities to a-C:H films and AZ 5214 photoresist. The etch rates were measured as a function of RF power in the range of 20–60 W. Carbon a-C:H films were found to be more etch resistant than organic AZ 5214, Si, and SiO2. AZ 5214 demonstrated a relatively high etch rate (300–700 Å/min). The best etch rate ratios of Si and SiO2 to carbon films were achieved at low RF power. Carbon films can be used as masks for deep pattern transfer to Si and SiO2 in photolithography."
}
@article{M2000217,
title = "Properties, Processing and Applications of Gallium Nitride and Related Semiconductors: J.H. Edgar, S. Strite, I. Akasaki, H. Amano, C. Wetzel (Eds.); INSPEC, The Institution of Electrical Engineers, ISBN 0-85296-818-3",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "217 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00114-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001147",
author = "M and Henini"
}
@article{M2000217,
title = "Phase and Phase Difference Modulation in Digital Communication: Y. Okunev; Lucent Technologies Corp., Artech House, 1997, 360 pages, hardcover, ISBN-0-89006-937-9, US$74.00",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "217 - 218",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00117-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001172",
author = "M and Milosevic"
}
@article{M2000218,
title = "Acoustic Charge Transport: Device Technology and Applications: Robert L. Miller, Carl E. Nothnick, Dana S. Bailey; Artech House, 1992, 570 pages, hardcover, ISBN-0-89006-520-9, US$47.00",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "218 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00118-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001184",
author = "M and Milosevic"
}
@article{M2000218,
title = "Molecular Beam Epitaxy: Applications to Key Materials: R.F.C. Farrow (Ed.); Noyes, ISBN: 0-8155-1371-2",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "218 - 219",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00120-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001202",
author = "M and Henini"
}
@article{M2000219,
title = "Handbook of Compound Semiconductors: P.H. Holloway, G.E. McGuire (Eds.); Noyes, ISBN: 0-8155-1374-7",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "219 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00121-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001214",
author = "M and Henini"
}
@article{M2000219,
title = "Handbook of Thin-Film Deposition Processes and Techniques: K.K. Schuegraph (Ed.); Noyes, ISBN: 0-8155-1153-1",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "219 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00122-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001226",
author = "M and Henini"
}
@article{M2000220,
title = "Digital Control — A State–Space Approach: by Richard J. Viccaro; McGraw-Hill, Inc., New York, 1995, 455 pages, ISBN 0-07-066781-0",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "220 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00123-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001238",
author = "M and Naumovi"
}
@article{J2000220,
title = "Fundamentals of III–V Devices. HBTs, MESFETs and HFETs/HEMTs: William Liu; John Wiley & Sons, New York, 1999, 505 pages, ISBN 0-471-29700-3, GBP 61.50",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "220 - 221",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00130-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001305",
author = "J and Karamarković"
}
@article{J2000221,
title = "SiGe, GaAs and InP Heterojunction Bipolar Transistors: Jiann S. Yuan. New York: John Wiley & Sons, Inc., 1999, 463 pages, ISBN: 0-471-19746-7, GBP 64.50",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "221 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00131-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001317",
author = "J and Karamarković"
}
@article{M2000222,
title = "Quantum Heterostructures: Microelectronics and Optoelectronics: V.V. Mitin, V.A. Kochelap, M.A. Stoscio (Eds.); Cambridge University Press, ISBN: 0-521-63635-3, £29.95",
journal = "Microelectronics Journal",
volume = "31",
number = "3",
pages = "222 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00135-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001354",
author = "M and Henini"
}
@article{Lim200077,
title = "Improved cross-coupled quad transconductor cell",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "77 - 81",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00082-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000828",
author = "Y.C Lim and W.H Lai and X.W Zhang and M.F Li",
keywords = "Cross-coupled CMOS transconductor cell",
keywords = "Linear transconductor",
abstract = "Simple modifications to the cross-coupled CMOS transconductor cell that reduce the quiescent currents while maintaining comparable linearity are described. SPICE simulation results show that using BSIM models and a ±5 V power supply, the linearity error is less than 0.6% over a differential input voltage range of ±1.3 V in the case of single-ended output, and less than 0.3% over a differential input voltage range of ±2.4 V in the case of differential output. The cut-off frequency and power consumption are 130 MHz and 5.2 mW in the case of single-ended output, and 80 MHz and 6.1 mW in the case of differential output. In both cases, the THD for a differential input voltage of 1Vpp at 1 kHz is 1.3%."
}
@article{Liberali200083,
title = "Dynamic characterisation of A/D converters using fast Walsh transform",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "83 - 90",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00091-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000919",
author = "V. Liberali and A. Manstretta and G. Torelli",
keywords = "Analog-to-digital converters",
keywords = "Fast Walsh transform",
keywords = "Walsh–Hadamard functions",
abstract = "This work presents an application of the Walsh transform to the dynamic characterisation of analog-to-digital converters (ADCs). The Walsh Transform (WT) is an analytical operator that extracts information on ADC parameters at the bit level rather than at the channel level. The use of the WT allows the performance of an ADC to be summarised with a reduced set of values as compared to the conventional set of non-linearity errors. To limit CPU time, a fast algorithm is used to compute the WT. A characterisation environment based on this approach was developed and used to evaluate ADC performance."
}
@article{Marrakh200091,
title = "Modelling of the surface potential evolution for a stressed submicronic MOSFET",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "91 - 94",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00092-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000920",
author = "R. Marrakh and A. Bouhdada",
keywords = "MOSFET",
keywords = "Surface potential evolution",
keywords = "Poisson's equation",
abstract = "We propose a model to determine the surface potential evolution for a stressed submicronic MOSFET. Stress conditions are chosen in a manner so that the interface states generated by the hot electron injection at the Si–SiO2 interface are dominant. The stress generated defects vary in time and are simulated by a spatial and temporal Gaussian distribution centred close to the extremity of the channel near the drain. The Gaussian parameters (standard deviation and maximum) vary according to the stress time. The surface potential model is derived by solving the two-dimensional Poisson's equation according to the spatial and temporal charge variation in the channel and electric field during stress time."
}
@article{Zhang200095,
title = "A hierarchical approach to stochastic discrete and continuous performance simulation using composable software components",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "95 - 104",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00095-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000956",
author = "T. Zhang and A. Dewey and R. Fair",
keywords = "Stochastic systems",
keywords = "Microelectrofluidic systems",
keywords = "Composable software components",
abstract = "This paper describes an integrated approach to modeling and simulation of discrete, continuous, and combined discrete/continuous dynamical behavior of stochastic systems. Representational paradigms and simulation techniques are presented. Integration is achieved by constructing a hierarchical suite of abstractions and simulation services built on a common microkernel. The abstractions and services are encapsulated into composable software components that leverage emerging distributed component platform technology, such as JavaBeans or Common Object Request Broker Architecture objects, for interoperation. Following the trend in large software system development, composable abstractions and services enables the use of interoperable components to assemble simulation applications from a variety of services and models, potentially from different vendors. The results illustrate a unified modeling and simulation strategy spanning low level logical/functional unit to high level architectural/process system design. New efficiencies in design methodologies are promoted by consolidating disparate simulation environments and models. Examples are given concerning performance simulation of microelectrofluidic systems."
}
@article{Thakare2000105,
title = "A new improved model for subthreshold slope for submicron MOSFETs",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "105 - 111",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00096-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000968",
author = "S.B Thakare and A.K Dutta",
keywords = "Subthreshold slope",
keywords = "Submicron MOSFETs",
keywords = "DIBL parameter",
abstract = "A new improved analytical model for the subthreshold slope (ss) for submicron MOSFETs, suitable for analog circuit CAD work is presented in this paper. An existing ss model (independent of drain voltage) is taken up and is modified in order to include the effect of the drain voltage. Additionally, it accounts for the effects of the effective channel length and the body voltage on the ss. An attempt is also made to represent the fudge factor, used widely in existing literature in the expression for the characteristic length, by a more physical representation than was done before. This ss model has been put in an existing drain current model in order to obtain the dc characteristics. The simulated results are compared with those reported experimentally for MOSFETs having channel lengths less than hundred nanometers, and the results show an excellent match between the two."
}
@article{Ng2000113,
title = "Low power flip-flop design based on PAL-2N structure",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "113 - 116",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00097-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900097X",
author = "K.W. Ng and K.T. Lau",
keywords = "Flip-flop",
keywords = "Pass-transistor adiabatic logic",
keywords = "Energy recovery",
abstract = "Adiabatic or energy-recovery logic has gained much attention recently in the development of low-power digital logic. The previously proposed adiabatic logic families have focused mainly on combination logic. In this paper, we extend this principle to the design of flip-flops. SR and JK flip-flop designs based on the pass-transistor adiabatic logic with NMOS pull-down configuration (PAL-2N) are presented. Based on the simulation results, these adiabatic flip-flops outperform their CMOS counterparts in terms of power consumption. The operation of a 4-bit binary counter developed using the proposed JK flip-flop has also been simulated and verified."
}
@article{Das2000117,
title = "The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier density",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "117 - 121",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00098-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000981",
author = "B Das and S McGinnis and M.R Melloch",
keywords = "Split-gate",
keywords = "Quasi-1D",
keywords = "Heterostructures",
keywords = "Magnetoresistance",
abstract = "The effective channel width of quasi-one-dimensional split-gate devices fabricated on a back-gated GaAs/AlGaAs modulation doped heterostructure is investigated as a function of carrier density for different split-gate voltages. For a fixed split-gate voltage, the effective channel width decreases with decreasing carrier densities, which is expected due to increased depletion layer width. The experimental data also indicates that the effective channel width can be modeled to depend approximately on the inverse square root of the carrier density. The results presented are valuable for the design of split-gate as well as new low dimensional device structures."
}
@article{MT2000123,
title = "Universal current-mode filter using single four-terminal floating nullor",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "123 - 127",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00099-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000993",
author = "M.T and Abuelma'atti",
keywords = "Four-terminal floating nullor",
keywords = "Cascadable current-mode filters",
keywords = "Second-generation current-conveyor",
keywords = "Current-amplifiers",
keywords = "Voltage-to-current converters",
abstract = "A new configuration for realizing cascadable lowpass, highpass, bandpass allpass, notch, lowpass notch and highpass notch, current-mode second-order filters using a single four-terminal floating nullor (FTFN) is presented. The proposed realizations require less matching and cancellation conditions and enjoy low active and passive sensitivities."
}
@article{Lambert2000129,
title = "Performance evaluation of analogue and digital radio-frequency stages for a DAVIC compliant modem",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "129 - 134",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00102-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001020",
author = "J.-Ph Lambert and A Dandache and F Monteiro and B Lepley",
keywords = "Digital modulation",
keywords = "Digital demodulation",
keywords = "Mixer",
keywords = "VHDL",
keywords = "Analogue and digital radio-frequency stages",
keywords = "Pipelined architecture",
keywords = "DAVIC",
keywords = "Functional simulation",
abstract = "In this paper, we compare the performances of two different designs of a radio-frequency stage in a modem application: an analogue design and a digital design. These designs have been evaluated for a particular case defined in the DAVIC recommendation (1.544 Mbits/s rate using DQPSK). The choice of the functional blocks for a good trade-off between performance and cost, granting a good transmission quality, was determined from a previous study by Lambert et al. [Design of radio-frequency stages for a high rate digital modem, ICECS’98, IEEE International Conference on Electronic Circuit and System, vol. 2, Lisbon, Portugal (IEEE1998), 1998, pp. 319–322]. This study was used as a starting point for the choice of the digital architecture. The functional blocks of the digital architecture have been described in VHDL and validated using the MaxPlusII software from Altera. The simulation of the two full designs was performed to compare the respective benefits and inconveniences of each design."
}
@article{Popova2000135,
title = "Voltage vs time dependent current response of MOSFET humidity gas sensor",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "135 - 138",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00103-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001032",
author = "L.I. Popova and S.K. Andreev and V.K. Gueorgiev and Tz.E. Ivanov",
keywords = "Pulse mode",
keywords = "Sorption phenomena",
keywords = "MOS transistor",
abstract = "Current response of a MOSFET humidity gas sensors is investigated, depending on the voltage applied (constant or pulsed) in a temperature interval of 10–50°C. A model, based on the variation Δϕ of the p–n junction potential barrier, is used for the explanation of the results. Δϕ is found to be strongly dependent on the mode of operation, on the pause/pulse duration and on the temperature in the range of relative humidity 10–90%."
}
@article{ElAdawy2000139,
title = "Low voltage fully differential CMOS voltage mode digitally controlled variable gain amplifier",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "139 - 146",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00104-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001044",
author = "A.A. El-Adawy and A.M. Soliman and H.O. Elwan",
keywords = "Voltage mode variable gain amplifier",
keywords = "Gain control",
keywords = "Differential output third intercept point",
abstract = "In this paper, a voltage mode variable gain amplifier (VGA) is presented. A fully differential implementation is used to suppress the common mode noise and increase the dynamic range. The gain of the proposed VGA can be digitally controlled from 0 to 53 dB, with a 1 dB resolution. The gain control is performed in two stages; coarse control with a 6 dB resolution and fine control with a 1 dB resolution. Simulation shows that the bandwidth is about 15 MHz at the maximum gain (53 dB). The differential output third intercept point (OIP3) is 4 V."
}
@article{D2000147,
title = "Electronic Communication Techniques; 4th ed., P. Young; Prentice-Hall PTR, Upper Saddle River, New Jersey, 1999, 863 pages, hardbound, ISBN 0-13-779984-5, US$34.95",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "147 - 148",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00053-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000531",
author = "D and Krstić"
}
@article{M2000148,
title = "Quantum Dot Heterostructures; D. Bimberg, M. Grundmann, N.N. Ledenstov; Wiley, New York, ISBN 0 471 97388 2, £90",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "148 - 149",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00093-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000932",
author = "M and Henini"
}
@article{M2000149,
title = "Foundations of Vacuum Science and Technology; J.M. Lafferty (Ed.); John Wiley & Sons, ISBN 0-471-17593-4",
journal = "Microelectronics Journal",
volume = "31",
number = "2",
pages = "149 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00094-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000944",
author = "M and Henini"
}
@article{Ustinov20001,
title = "Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "1 - 7",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00083-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900083X",
author = "V.M. Ustinov and A.E. Zhukov and A.R. Kovsh and N.A. Maleev and S.S. Mikhrin and A.F. Tsatsul'nikov and M.V. Maximov and B.V. Volovik and D.A. Bedarev and P.S. Kop'ev and Z.I. Alferov and L.E. Vorob'ev and D.A. Firsov and A.A. Suvorova and I.P. Soshnikov and P. Werner and N.N. Ledentsov and D. Bimberg",
keywords = "Quantum dot",
keywords = "Molecular beam epitaxy",
keywords = "Semiconductor laser",
abstract = "We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InGaAs/GaAs quantum well led to achieving the 1.3 μm spontaneous emission and 1.26 μm lasing with extremely low threshold current density of 70 A/cm2 at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 μm emission at room temperature. FIR emission simultaneous to 0.94 μm lasing has been observed in InGaAs quantum dot lasers due to intersubband carrier transitions in quantum dots."
}
@article{SJG20009,
title = "The application of all-pass filters in the design of multiphase sinusoidal systems",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "9 - 13",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00084-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000841",
author = "S.J.G and Gift",
keywords = "Multiphase sinusoidal systems",
keywords = "All-pass filters",
keywords = "Even and odd phases",
abstract = "The design of even and odd phase sinusoidal systems using all-pass networks is presented. The all-pass network has the unique characteristic of unity gain at all frequencies and a frequency-dependent phase relationship between output and input. It produces up to 180° phase shift which allows the easy implementation of multiphase systems. The network is implemented using the widely available operational amplifier which results in low harmonic distortion, low frequency error, large output voltage swing and low output impedance from a simple structure. The operating frequency is limited only by the gain–bandwidth product of the op-amp."
}
@article{Yoon200015,
title = "Observation of weak ordering effects and surface morphology study of InGaP grown by solid source molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "15 - 21",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00085-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000853",
author = "S.F. Yoon and K.W. Mah and H.Q. Zheng and B.P. Gay and P.H. Zhang",
keywords = "Solid source molecular beam epitaxy (SSMBE)",
keywords = "InGaP samples",
keywords = "Raman scattering measurement",
abstract = "We report the characterization of InGaP grown lattice-matched to GaAs using a valved phosphorus cracker cell in solid source molecular beam epitaxy (SSMBE) over a wide range of substrate temperature (Ts from 420 to 540°C). The optical bandgap and lattice-mismatch were determined using low temperature photoluminescence (PL) and X-ray diffraction (XRD). Raman scattering measurements showed signals at 330, 360 and 380 cm−1 which correspond to the InP-like transverse-optic (TO), InP-like longitudinal-optic (InP-LO) and GaP-like LO modes, respectively. The sample grown at Ts=540°C showed poor surface morphology caused by indium desorption as verified by scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) examination. The optical bandgap decreased marginally (∽23 meV) while the ordering parameter increased slightly in samples grown at an increasing substrate temperature. The relatively small variation in the Raman intensity of the InP-like and GaP-like LO mode and the marginal decrease in the valley-to-peak intensity ratio of the InP-like LO mode indicate the presence of relatively weak ordering effects in the material. Further evidence of weak Cu–Pt-type ordering comes from the observation of a signal at 354 cm−1 in the Raman spectrum."
}
@article{Stojcev200023,
title = "Data reordering converter: an interface block in a linear chain of processing arrays",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "23 - 37",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00086-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000865",
author = "M.K. Stojcev and G.Lj. Djordjevic and E.I. Milovanovic and I.Z. Milovanovic",
keywords = "Data reordering converter",
keywords = "Address transformator",
keywords = "Accelerator",
keywords = "Memory bandwidth",
keywords = "Scalable coprocessor system",
keywords = "Digital signal processing",
abstract = "This paper addresses the problem of hardware synthesis of data reordering converter intended to reorganize the layout of transferred data between various processing stages (components) with different I/O format requirements. The proposed design is based on two objectives: (a) fixed bandwidth to main memory, and (b) scalability to higher performance without increasing main-memory bandwidth. The data reordering converter involves two address transformators and an array of dual-port RAMs. The use of distributed dual-port RAM architecture provides several benefits. First, to exploits parallelism, second, to achieve very high-speed data transfer, and third, to allow random access to data elements within the stream. We outline a new architecture for interfacing processing stages in a linear chain, which operate in a pipeline-parallel fashion that trades speed advantages of systolic/processor arrays with area advantages of high wire organizations. An implementation, in VLSI, of address transformators is described, and shown why data reordering converter is useful in designing special purpose high-performance computing for embedded digital signal processing applications."
}
@article{Salama200039,
title = "Novel oscillators using the operational transresistance amplifier",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "39 - 47",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00087-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000877",
author = "K.N Salama and A.M Soliman",
keywords = "Oscillators",
keywords = "Operational transresistance amplifier",
abstract = "This paper introduces several novel active RC oscillator circuits using the operational transresistance amplifier (OTRA) as the basic active building block. A general configuration using a single OTRA is introduced, from which a minimum component oscillator is generated. Four new oscillator circuits based on using two OTRAs are reported. HSpice simulations to confirm the analysis are given."
}
@article{Acar200049,
title = "nth-order current transfer function synthesis using current differencing buffered amplifier: signal-flow graph approach",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "49 - 53",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00088-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000889",
author = "C. Acar and S. Özoǧuz",
keywords = "Current-mode circuits",
keywords = "Current differencing buffered amplifiers",
keywords = "Signal-flow graphs",
abstract = "The authors present a general synthesis method for the realisation of nth-order current transfer function using current differencing buffered amplifier which can easily be derived from a commercially available active component, AD844. The use of this active component simplifies the implementation of analogue signal processing filters and hence makes the proposed circuit attractive."
}
@article{Ng200055,
title = "Improved PAL-2N logic with complementary pass-transistor logic evaluation tree",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "55 - 59",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00089-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000890",
author = "K.W. Ng and K.T. Lau",
keywords = "Power savings",
keywords = "Improved PAL-2N logic",
keywords = "Adiabatic circuit",
abstract = "In general, adiabatic circuits demonstrate significant power savings over conventional CMOS. However, it is impractical to use adiabatic switching technique to implement complex logic with many cascading stages as only one level of gates can be computed in every phase. In this article, an improved PAL-2N logic with complementary pass-transistor logic (CPL) evaluation tree (C-PAL) is proposed. Using the proposed logic together with the PAL-2N logic, more than one level of gates can be computed within a single operating phase. This helps to achieve a reduced latency for the proposed adiabatic circuit."
}
@article{M200061,
title = "Introduction to Modern Power Electronics; A.M. Trzynadlowski; Wiley, New York, 1998, 433 pages, hardbound, ISBN 0-471-15303-6, £48.50",
journal = "Microelectronics Journal",
volume = "31",
number = "1",
pages = "61 - ",
year = "2000",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00067-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000671",
author = "M and Stojčev"
}
@article{tagkey1999xiii,
title = "Index",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "xiii - xvi",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00125-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001251",
key = "tagkey1999xiii"
}
@article{Çam19991187,
title = "CMOS four terminal floating nullor design using a simple approach",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1187 - 1194",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00021-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900021X",
author = "U. Çam and H. Kuntman",
keywords = "CMOS FTFN",
keywords = "OFA",
keywords = "Current-mode circuits",
abstract = "In this study a simple approach for design of four terminal floating nullor (FTFN) is introduced and two new CMOS FTFN topologies are proposed using the approach from suitable CMOS negative current conveyor (CCII−) structures. The performance of the proposed circuits was tested by Pspice computer simulation program. The feasibility of the proposed circuits was shown on a current-mode band-pass filter example constructed using one of the proposed CMOS FTFN circuits. The simulation results are given to confirm the predicted theory."
}
@article{Liu19991195,
title = "Analytical modelling of current gain and frequency characteristics under high injection levels in Si/SiGe heterojunction bipolar transistors at 77 and 300 K",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1195 - 1206",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00031-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000312",
author = "R Liu and W Qian and T Wei",
keywords = "Si/SiGe heterojunction bipolar transistors",
keywords = "Current gain and frequency characterstics",
keywords = "High-injection analysis",
abstract = "This paper reports an analytical modelling of current gain and frequency characteristics in Si/SiGe heterojunction bipolar transistors (HBTs) at 77 and 300 K. Important transistor parameters, such as current gain, transconductance, cutoff frequency and maximum oscillation frequency are calculated as a function of Ge concentration in the base under different injection levels. The main physical mechanisms for the current and cutoff frequency rolloff at high injection levels are also analyzed. It shows that the high-level injection effect is more pronounced in the SiGe HBTs as a result of the increasing minority carrier concentration in the base and the Ge concentration and distribution will have a decisive influence of device performance. The results may provide a basis for the design of low temperature operation SiGe HBTs."
}
@article{Igic19991207,
title = "An advanced finite element strategy for thermal stress field investigation in aluminium interconnections during processing of very large scale integration multilevel structures",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1207 - 1212",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00034-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000348",
author = "P.M. Igic and P.A. Mawby",
keywords = "Thermal stress",
keywords = "Very large scale integrated circuits (VLSI)",
keywords = "Finite element modelling (FEM)",
abstract = "An advanced strategy for modelling the thermal stress induced in aluminium interconnections during processing of multilevel structures is presented. The advantage of the approach described is that it allows the residual stresses from one processing step to be used as the initial conditions for a subsequent step. 2D elasto-plastic model (von Mises plastic criterion) is implemented in Finite Element Code and it is shown that even after significant relaxation by plastic deformation, high thermal stress resides in the aluminium line in both width and thickness directions. The technique demonstrated here is for a silicon-glass–aluminium-glass structure. However, it is readily extended to more complex situations and material combinations."
}
@article{Martins19991213,
title = "Proposal and implementation of a new interpolation technique for a double folding A/D converter",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1213 - 1219",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00035-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900035X",
author = "E.M Martins and E.C Ferreira",
keywords = "A/D converter",
keywords = "Folding",
keywords = "Interpolation",
abstract = "This proposal of a new interpolation technique is presented for application in a double folding A/D converter with interpolation. This interpolation technique is applied in the master latches of the A/D converter without consumption increase. Compared to resistive interpolation, this new interpolation technique has the advantage of avoiding the resistive interpolation ladder adding only three transistors in some master latches and the current is the same as in the simple master latch. A 6-bit A/D converter was designed and implemented in a 1.2 μm BiCMOS process, an FT of 8 GHz, to explain the implementation of interpolation circuitry and evaluate the experimental results."
}
@article{RK19991221,
title = "A new method for measurement of threshold voltage non-uniformity in CCD multiplexers for hybrid focal plane arrays",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1221 - 1225",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00038-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000385",
author = "R.K. and Bhan",
keywords = "Threshold voltage",
keywords = "Uniformity",
keywords = "CCD multiplexer",
keywords = "Fixed pattern noise",
keywords = "Focal plane arrays",
abstract = "A new, simple and rapid method for determining threshold voltage (VT) non-uniformity in two-dimensional CCD multiplexers (MUXs) for hybrid focal plane arrays is presented. The method is based on simple oscilloscopic measurement of non-uniformity in the output signal of CCD MUX. The non-uniformity in VT, measured by this method, is compared with conventional current forcing method. The results of the proposed new method agree within 7.8% with the conventional method. Additionally, intrinsic non-uniformity due to processing and material variations is also measured by this method."
}
@article{AnnovazziLodi19991227,
title = "Mechanical–thermal noise in micromachined gyros",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1227 - 1230",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00046-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000464",
author = "V Annovazzi-Lodi and S Merlo",
keywords = "Mechanical–thermal fluctuations",
keywords = "Vibrating-mass surface-machined gyroscope",
keywords = "Coriolis force",
abstract = "In this paper we investigate the effect of mechanical–thermal fluctuations on a vibrating-mass surface-micromachined gyroscope. It is found that this noise source represents a practical sensitivity limit in such devices and is likely to restrict their performances to the automotive grade."
}
@article{Ismail19991231,
title = "Novel CMOS current conveyor realizations suitable for high-frequency applications",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1231 - 1239",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00047-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000476",
author = "A.M Ismail and A.M Soliman",
keywords = "Current conveyors",
keywords = "CMOS realizations",
abstract = "Novel CMOS realizations of the second and the third generation current conveyors based on the use of the current conveyor of the first generation are given. The simulations show that these circuits have an excellent performance and an exceptional bandwidth."
}
@article{M19991241,
title = "Low-voltage adders for power-efficient arithmetic circuits",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1241 - 1247",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00048-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000488",
author = "M and Margala",
keywords = "Adder architectures",
keywords = "Standard CMOS adder",
keywords = "Power efficiency",
abstract = "This paper presents the results of a study of alternative adder architectures, a full-swing Bipolar Double Pass-Transistor adder, a new full-swing BiNMOS adder, a reduced-swing Bipolar Double Pass-Transistor adder and a reduced-swing Double Pass-Transistor BiNMOS adder, that outperform a standard CMOS adder up to three times in power-efficiency at supply voltages 1.5–3 V. The Bipolar Double Pass-Transistor adder is more power-efficient than a standard CMOS adder even at a fanout of 1. All remaining proposed adders have a lower crossover capacitance with a standard CMOS adder than the previously reported low-voltage adders. Circuits were designed and fabricated in 0.8 μm BiCMOS technology."
}
@article{A19991249,
title = "A new approach for the realization of voltage-mode second-order universal filters using current conveyors",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1249 - 1253",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00049-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900049X",
author = "A. and Toker",
keywords = "Active filters",
keywords = "Current conveyors",
keywords = "Universal filters",
abstract = "In this work two different types of topologies are derived for realization any second-order filter characteristic by choosing properly, the admittances of passive elements. These topologies use two second-generation current conveyors (CCIIs). One of the topologies involves different types of CCIIs whereas the other uses the same type of CCIIs together with a unity gain voltage buffer. The buffer used provides not only low output impedance but also facilitates cascading of the filter circuits thus obtained. It is possible to derive many different filters realizing any second-order transfer function by the use of the proposed topologies. Moreover, the produced filters have low-sensitivity performance and permit orthogonal controlling of both the quality factor and the natural angular frequency."
}
@article{Jevtić19991255,
title = "Thick-film resistor quality indicator based on noise index measurements",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1255 - 1259",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00050-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000506",
author = "M.M. Jevtić and I. Mrak and Z. Stanimirović",
keywords = "Thick-film resistors",
keywords = "Noise index",
keywords = "Noise reduced mobility",
keywords = "Quality indicator",
abstract = "A quality indicator for thick-film resistors based on noise index and resistance measurements is proposed. As this correlates resistor transport and noise characteristics and has mobility dimensions, we titled it to be noise reduced mobility. The experimental results for thick-film resistors, realized using three different resistor compositions with sheet resistances of 1, 10 and 100 kΩ m/sqr show that layers with sheet resistance of 10 kΩ0.25>m/sqr have minimum value of noise reduced mobility in comparison with layers formed using resistor compositions with sheet resistances of 1 and 100 kΩ m/sqr. The potential and resistance distributions measured along test resistors show that the noise reduced mobility is in correlation with thick-film inhomogeneity."
}
@article{Lau19991261,
title = "A low-power synapse/neuron cell for artificial neural networks",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1261 - 1264",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00051-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000518",
author = "K.T Lau and S.T Lee and P.K Chan",
keywords = "Artificial neural networks",
keywords = "Synapse/neural cell",
keywords = "MOS transistor",
abstract = "A reconfigurable low-voltage low-power cell that can function either as a synapse or a neuron is proposed and analyzed in this article for the VLSI implementation of artificial neural networks (ANNs). The measured results are also presented. The design is based on the current-mode approach and uses the square-law characteristics of an MOS transistor working in saturation. The proposed fabricated synapse/neuron cell utilizes I–V converters, current mirror, and a ±1 V power supply to achieve superior performance. Modularity, ease of interconnectivity, expandability and reconfigurability are the main advantages of this cell."
}
@article{Tarim19991265,
title = "The effects of CCII non-idealities on voltage-mode active filters",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1265 - 1272",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00052-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900052X",
author = "N Tarim and H Kuntman",
keywords = "Voltage-mode active filters",
keywords = "Current conveyor non-idealities",
keywords = "Filter transfer functions",
abstract = "In active filters, the performance of the active element plays an important role in the overall performance of the filter, besides the filter configuration itself. In this paper, we will investigate the effects of current conveyor non-idealities on a certain class of filters which consists of four current conveyors and seven nodes, and derive analytical expressions for the filter parameter deviations in terms of non-ideality terms. The results obtained apply to all filters under this class which are considerable in number. This will enable us to determine the requirements for the current conveyor non-ideality terms in order to obtain a specified filter performance. A comparable demonstration of the filter transfer functions for two example current conveyor circuits will be given. Simulations including three types of filters, namely, the bandpass, lowpass and highpass filters, confirm the analytical expressions obtained."
}
@article{M19991273,
title = "Growth and Properties of Ultrathin Epitaxial Layers by D.A. King and D.P. Woodruff (Eds.). Elsevier Science, ISBN 0-444-82768-4",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1273 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00042-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000427",
author = "M and Henini"
}
@article{M19991273,
title = "Properties of Lattice-matched and Strained Indium Gallium Arsenide by P. Bhattacharya (Ed.). London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-865-5; Properties of Indium Phosphide, London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-491-9; Properties of Aluminium Gallium Arsenide by S. Adachi (Ed.). London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-558-3",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1273 - 1274",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00043-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000439",
author = "M and Henini"
}
@article{A19991274,
title = "VLSI Custom Microelectronics: Digital, Analog, and Mixed-Signal by Stanley L. Hurst",
journal = "Microelectronics Journal",
volume = "30",
number = "12",
pages = "1274 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00044-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000440",
author = "A and Saidane"
}
@article{Rencz19991083,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1083 - 1084",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00068-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000683",
author = "M Rencz and V Szekely and B Courtois"
}
@article{MN19991085,
title = "Static and dynamic thermal modeling of ICs",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1085 - 1091",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00069-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000695",
author = "M.-N. and Sabry",
keywords = "Thermal modeling",
keywords = "Electro-thermal simulation",
keywords = "Steady and transient regimes",
abstract = "Thermal modeling of IC chips in view of coupled electro-thermal simulation, is investigated both for steady and transient regimes. This paper presents a methodology to efficiently obtain both the topology of an adequate reduced thermal model of the chip as well as parameter values in this model."
}
@article{D19991093,
title = "The relationship between parabolic and hyperbolic transmission line matrix models for heat-flow",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1093 - 1097",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00070-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000701",
author = "D and de Cogan",
keywords = "Transmission line matrix",
keywords = "Telegrapher's equation",
keywords = "Finite difference",
abstract = "Transmission line matrix (TLM) algorithms for lossy electrical network provide a solution for the telegrapher's equation. In spite of the fact that these constitute a lossy wave equation analogue, they have been successfully used to model thermal problems. This paper discusses the relationship between the hyperbolic and parabolic formulations and shows how TLM can be successfully applied in both regimes."
}
@article{Janicki19991099,
title = "Application of inverse problem algorithms for integrated circuit temperature estimation",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1099 - 1107",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00071-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000713",
author = "M. Janicki and M. Zubert and A. Napieralski",
keywords = "Circuit temperature estimation",
keywords = "Inverse problem algorithm",
abstract = "This article presents an approach to the application of inverse problem algorithms for integrated circuit temperature estimation. In order to estimate circuit temperature from remote sensor measurements, it is necessary to solve an inverse heat conduction problem (IHCP). As the IHCPs are extremely sensitive to input data errors, special algorithms must be used to obtain robust estimates of circuit temperature. Computer simulations have been performed applying different algorithms to produce circuit temperature estimates in case of multiple heat sources. Simulation results are presented. Additionally, the possibility of digital filter algorithm implementation is discussed."
}
@article{Morrissey19991109,
title = "Packaging and thermal evaluation of thermally operated intelligent micropump unit",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1109 - 1114",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00072-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000725",
author = "A Morrissey and J Alderman and G Kelly and Zs Kohári and A Páhi and M Rencz",
keywords = "Micro electro-mechanical system",
keywords = "Microsystem",
keywords = "Packaging",
keywords = "Micorpump",
keywords = "Thermal simulation",
keywords = "SUNRED",
keywords = "SYSTUS",
abstract = "After presenting the challenges and solutions of the 3D packaging of a medical implant MEMS device the paper presents thermal simulations on the structure. Using this simulation problem as a case study various features of the SUNRED and SYSTUS 3D simulators are compared in the paper."
}
@article{Ciampolini19991115,
title = "Modelling thermal effects of large contiguous voids in solder joints",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1115 - 1123",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00073-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000737",
author = "L. Ciampolini and M. Ciappa and P. Malberti and P. Regli and W. Fichtner",
keywords = "Thermal modelling",
keywords = "Thermal analysis",
keywords = "Solder voids",
keywords = "Infrared imaging",
keywords = "Hybrids",
abstract = "The local distortion of the junction temperature due to large contiguous voids in the die attach of real power devices is investigated and modeled. Temperature fields obtained by thermal simulations are calibrated with experimental data obtained by high-resolution infrared thermography. The junction temperature distortion caused by a large single void is shown to be proportional to the void area via a package-dependent coefficient (differential specific thermal resistance). Further, correction factors which take into account the effects of both aspect ratio and location of the void have been computed, thereby leading to a procedure for an accurate estimation of the local junction temperature distortion peaks."
}
@article{Nassim19991125,
title = "High-resolution interferometry and electronic speckle pattern interferometry applied to the thermomechanical study of a MOS power transistor",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1125 - 1128",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00074-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000749",
author = "K Nassim and L Joannes and A Cornet and S Dilhaire and E Schaub and W Claeys",
keywords = "Interferometry",
keywords = "Michelson",
keywords = "Speckle",
keywords = "ESPI",
keywords = "Power transistor",
keywords = "Power devices",
abstract = "We present an original optical approach for the thermomechanical study of electronic devices. We have applied it to image the deformation undergone by a MOS power transistor due to its operation. This imaging method allows the derivation of the three components of the displacement vector of each point of the surface of the component while heated by Joule effect while running. The method has a nanometric resolution for the displacement measurement and is based on the analysis of the speckle structure of the device while illuminated by coherent light. A high-resolution interferometer is also used to record the transient behavior of the normal surface displacement of a point of the surface. These optical approaches provide interesting quantitative information about strain and stress in electronic power devices and allow testing of finite element simulations. These techniques can be compared to Moiré thermomechanical studies but with better resolution and sensitivity."
}
@article{DiPascoli19991129,
title = "Thermal analysis of insulated metal substrates for automotive electronic assemblies",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1129 - 1135",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00075-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000750",
author = "S Di Pascoli and P.E Bagnoli and C Casarosa",
keywords = "Thermal analysis",
keywords = "Insulated metal substrate",
keywords = "Automotive assemblies",
abstract = "Two types of insulated metal substrates for surface mounting technology (SMT) for automotive applications were thermally examined by means of the TRAIT method [P.E. Bagnoli, C. Casarosa, M. Ciampi, E. Dallago, Thermal resistance analysis by induced transient (TRAIT) method for power electronic devices thermal characterization. Part I: fundamentals and theory, IEEE Transactions in Power Electronics 13 (1998) 1208–1219]. The results showed a noticeably lower static thermal resistance than other solutions commonly used. Moreover, TRAIT analysis provided evidence that the residue thermal resistance has to be ascribed to the epoxy insulating layer of the IMS substrates, suggesting that the differences between different types of IMS substrates are due to differences in the dielectric deposition technology."
}
@article{Kaminski19991137,
title = "Non-destructive characterisation of defects in devices using infrared thermography",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1137 - 1140",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00076-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000762",
author = "A. Kaminski and J. Jouglar and C. Volle and S. Natalizio and P.L. Vuillermoz and A. Laugier",
keywords = "Infrared thermography",
keywords = "Non-destructive characterisation",
keywords = "Device testing",
abstract = "The aim of this work is to develop a reliable and precise non-destructive characterisation method for devices testing using infrared thermography. Our method is applied to submicronic junction solar cell characterisation. Two types of measurements are tested and compared: a static method and a pulse method. Both give similar results but obviously the pulse method is faster. In order to determine the temperature of the different parts of the structure with accuracy, emissivity and transmission measurements have been performed. An example of the characterisation is presented showing the precision of the method."
}
@article{Lysenko19991141,
title = "Theoretical and experimental study of heat conduction in as-prepared and oxidized meso-porous silicon",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1141 - 1147",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00077-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000774",
author = "V. Lysenko and L. Boarino and M. Bertola and B. Remaki and A. Dittmar and G. Amato and D. Barbier",
keywords = "Meso-porous silicon",
keywords = "Heat conduction",
keywords = "Photoacoustic measurements",
abstract = "Recently measured low thermal conductivity of as-prepared and slightly oxidized meso-porous silicon (meso-PS) offers new possibility to apply this promising material for thermal isolation in microsensors and microsystems. We report here a theoretical model describing specific mechanisms of heat transport in as-prepared and oxidized meso-PS. The model is in good agreement with experimental data obtained earlier. In order to compare the thermal conductivity values of meso-PS layers oxidized at different temperatures with each other and with thermal conductivity of monocrystalline Si, a series of photoacoustic measurements was carried out. Evolution of the thermal conductivity along with oxidized fraction of Si in meso-PS has the same dynamics as that described by the theoretical model."
}
@article{Boarino19991149,
title = "Design and fabrication of metal bolometers on high porosity silicon layers",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1149 - 1154",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00078-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000786",
author = "L Boarino and E Monticone and G Amato and G Lérondel and R Steni and G Benedetto and A.M Rossi and V Lacquaniti and R Spagnolo and V Lysenko and A Dittmar",
keywords = "Metal bolometers",
keywords = "FEM thermal analysis",
keywords = "p-Type porous silicon (PS)",
abstract = "Fabrication and characterisation of metal bolometers on p-type porous silicon (PS) layers are presented as an alternative to more complex micromachining processes for thermal insulation of sensors. A comparison of Nb strips deposited on layers of PS of varying thicknesses and porosities and on other substrates such as amorphous glass and crystalline silicon is described. Results of electrical characterisation, photoacoustic depth profiling and FEM thermal analysis are presented. Photoacoustic investigation on very high porosity layers (≥90%) gives promising indications on the thermal insulation efficiency of thin PS layers, which could be competitive with suspended structures for their low cost and number of fabrication steps."
}
@article{Laiz19991155,
title = "Dynamic non-linear electro-thermal simulation of a thin-film thermal converter",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1155 - 1162",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00079-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000798",
author = "H Laiz and M Klonz",
keywords = "Electro-thermal simulation",
keywords = "Thin-film thermal converter",
keywords = "Low frequency ac–dc transfer",
abstract = "This article describes the electro-thermal simulation of the ac–dc transfer differences at low frequencies of a thin-film thermal converter. The dynamic non-linear model includes the temperature dependence of all the material parameters, and the radiation losses. It is used to optimise the performance of the device at low frequencies, where temperature oscillations are present due to the lack of integration of the oscillating Joule heat. The results of the simulation are compared with those of the measurements using a digital method."
}
@article{Langley19991163,
title = "High-sensitivity, surface-attached heat flux sensors",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1163 - 1168",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00080-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000804",
author = "L.W. Langley and A. Barnes and G. Matijasevic and P. Gandhi",
keywords = "Heat flux sensors",
keywords = "Seebeck coefficient",
keywords = "Transient liquid phase sintering",
abstract = "A new type of flat, surface-attached heat flux sensor has been developed for a variety of heat transfer measurements. This differential thermopile transducer uses new polymer-based materials and a novel patterning technology. The patterning is done using photoimageable dielectrics, allowing definition of 125 μm features over a large area. Thin anodized aluminium is used as a substrate material to achieve low thermal resistance of the sensor. The multilayer technology was used to fabricate a variety of heat sensors which have 1550 thermocouples/cm2 and a sensitivity of up to 40 mV/(W/cm2). The applications of these sensors include integrated circuit heat flux measurement, fire detection, insulation testing, and biological heat transfer measurement."
}
@article{Teh19991169,
title = "Time-dependent buckling phenomena of polysilicon micro beams",
journal = "Microelectronics Journal",
volume = "30",
number = "11",
pages = "1169 - 1172",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00081-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000816",
author = "Kwok Siong Teh and Liwei Lin",
keywords = "Buckling phenomena",
keywords = "Microelectromechanical systems",
keywords = "Polysilicon micro beams",
keywords = "Time-dependent",
keywords = "High temperature",
abstract = "Time-dependent buckling phenomena of polysilicon micro beams have been demonstrated and reported. These beams are suspended 2 μm above the silicon substrate with dimensions of 100 μm (length)×2 μm (width)×2 μm (thickness). When a constant input current is supplied at or above a threshold value, electro-thermally induced buckling occurs. It is observed and recorded that the beams exhibit time-dependent elongation. Three types of time-dependent material behaviors have been identified, including pure elastic buckling, time-dependent elastoplastic deformation and the combination of melting and irreversible plastic damage."
}
@article{EN1999923,
title = "Quasibound states in semiconductor quantum devices: introduction",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "923 - 924",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00054-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000543",
author = "E.N and Glytsis"
}
@article{PJ1999925,
title = "Quasi-bound states and resonances in heterostructures",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "925 - 934",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00064-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000646",
author = "P.J. and Price",
keywords = "Multi-channel nanostructures",
keywords = "S-matrix",
keywords = "Dwell times",
keywords = "Wigner–Eisenbud phase delays",
keywords = "Density of states",
abstract = "The general theory for resonances of coherently propagating electron states in nanostructures is presented. Resonances in transmission as a function of electron energy, concomitant peaks in the density of states within the structure, and slowly escaping quasi-levels, are fundamentally related. Their connection depends on features of the continuation to complex energy of the energy dependence of system variables. Diode (parallel-plane) structures are first analyzed, with emphasis on fundamental formulas. Relations between the dwell times and phase (Wigner–Eisenbud) propagation delays are obtained. The relationship between transfer matrix, S-matrix, and a third computation-adapted matrix is shown. The general theory for multi-channel nanostructures is then developed in terms of the system S-matrix, generalizing diode results. The critical variables are the eigenvalues, and accompanying channel eigenvectors, of the S-matrix, as a function of energy. It is shown that the density of states within the structure when integrated over the energy range of a resonance equals just one electron, appropriate to a quasi-level."
}
@article{Anemogiannis1999935,
title = "Quasibound state determination of arbitrary-geometry quantum heterostructures",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "935 - 951",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00060-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000609",
author = "E. Anemogiannis and E.N. Glytsis and T.K. Gaylord",
keywords = "Quantum heterostructures",
keywords = "Resonant phenomena",
keywords = "Quantum devices",
keywords = "Quasibound states",
abstract = "The operation and performance of semiconductor electronic and optoelectronic quantum-heterostructures devices are critically dependent on the quasibound states of these structures. In this paper a unified set of four numerical methods is presented that are capable of determining the quasibound-state eigen-energies and their lifetimes in quantum heterostructures having arbitrary potential profiles. The methods are applicable to symmetric, asymmetric, unbiased or biased devices. All the numerical approaches solve the single-band effective-mass Schrödinger equation. The numerical methods are shown to be both numerically efficient and accurate."
}
@article{Bessis1999953,
title = "Design of semiconductor heterostructures with preset electron reflectance by inverse scattering techniques",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "953 - 974",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00059-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000592",
author = "D. Bessis and G.A. Mezincescu",
abstract = "We present the application of the inverse scattering method to the design of semiconductor heterostructures having a preset dependence of the (conduction) electrons’ reflectance on the energy. The electron dynamics are described by either the effective mass Schrödinger equation or by the (variable mass) BenDaniel and Duke equations. The problem of phase (re)construction for the complex transmission and reflection coefficients is solved by a combination of Padé approximation techniques, obtaining reference solutions with simple analytic properties. Reflectance-preserving transformations allow bound state and reflection resonance management. The inverse scattering problem for the Schrödinger equation is solved using an algebraic approach due to Sabatier. This solution can be mapped unitarily onto a family of BenDaniel and Duke type equations. The boundary value problem for the nonlinear equation which determines the mapping is discussed in some detail. The chemical concentration profile of heterostructures whose self consistent potential yields the desired reflectance is solved completely in the case of Schrödinger dynamics and approximately for BenDaniel and Duke dynamics. The Appendix contains a brief digest of results from the scattering and inverse scattering theory for the one-dimensional Schrödinger equation which is used in the article."
}
@article{Guthrie1999975,
title = "Measurement of quasibound states in semiconductor heterostructures using ballistic electron emission spectroscopy",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "975 - 983",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00058-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000580",
author = "D.K. Guthrie and P.N. First and T.K. Gaylord and E.N. Glytsis and R.E. Leibenguth",
keywords = "Ballistic electron emission spectroscopy",
keywords = "Quantum-well infrared photodetectors",
keywords = "Semiconductor heterostructures",
abstract = "Ballistic electron emission spectroscopy (BEES) has been used to measure the quasibound states in a series of Ga1−xAlxAs heterostructures. These structures include a Ga0.8Al0.2As single-barrier device and two complementary electron-wave Fabry–Perot quantum interference filters. By utilizing the BEES second-derivative spectrum, which is a measure of the electron transmittance function of the buried heterostructure, we have been able to determine accurately the characteristics of quasibound states for devices designed and optimized to show specific resonances (Fabry–Perot electron-wave filters) and for devices neither designed nor optimized to show interference effects (single-barrier structure). The measurements reproduce accurately the calculated zero-bias transmittance function of the electron-wave filters and clearly demonstrate the unique capabilities of the technique for providing crucial information that is not available from other techniques."
}
@article{DZY1999985,
title = "Multiband and multidimensional quantum transport",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "985 - 1000",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00065-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000658",
author = "D.Z.-Y. and Ting",
keywords = "Three-dimensional quantum transport",
keywords = "Realistic band structure",
keywords = "Hole mixing",
keywords = "Γ–X mixing",
keywords = "Interband tunneling",
keywords = "Interface roughness",
abstract = "We give an overview of a numerically stable and efficient method for computing transmission coefficients in semiconductor heterostructures using multiband band structure models. The multiband quantum transmitting boundary method (MQTBM) has been successfully implemented for the empirical tight-binding model, the effective bond orbital, the k·p model, and the pseudopotential method. It has been used extensively in the investigation of band structure effects such as valley mixing and band mixing. We use a GaAs/AlAs double barrier heterostructure and an InAs/GaSb/AlSb interband tunnel device to illustrate the applications of this method to the phenomena of X-point tunneling, hole tunneling, and interband magneto-tunneling. We then review a closely related method, the open-boundary planar supercell stack method (OPSSM), as a means for treating 3D quantum transport in mesoscopic tunnel structures. The flexibility of the method allows us to examine a variety of physical phenomena relevant to quantum transport, including alloy disorder, interface roughness, defect impurities, and 0D, 1D, and 2D quantum confinement, in device geometries ranging from double barrier heterostructures to quantum wire electron waveguides. As examples, we examine double barrier structures with interface roughness, resonant tunneling through self-organized InAs quantum dots, and MOS tunnel structures with non-uniform ultra-thin oxide layers."
}
@article{Tsuji19991001,
title = "Analysis of complex eigenenergies of an electron in two- and three-dimensionally confined systems using the weighted potential method",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "1001 - 1006",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00062-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000622",
author = "Y. Tsuji and M. Koshiba",
keywords = "Quantum wells",
keywords = "Electron lifetime",
keywords = "Eigenstate",
keywords = "Eigenenergy",
keywords = "Weighted potential method",
abstract = "As a useful approach to analyze eigenstates (eigenenergies) of an electron in a quantum box structure, the weighted potential method (WPM) is formulated. This approach can treat complex eigenenergies of an electron and allows us to estimate electron lifetime. In order to show the validity of this approach, the time-dependent analysis is performed for quantum-well and quantum-wire structures in the presence of an applied electric field and the results are compared with those of WPM. Quantum box structures are also treated with WPM, and the effects of the strength and direction of the applied electric field on the complex eigenenergies are investigated in detail."
}
@article{H19991007,
title = "Three-dimensional scattering matrix simulation of resonant tunnelling via quasi-bound states in vertical quantum dots",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "1007 - 1017",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00063-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000634",
author = "H. and Mizuta",
keywords = "Zero-dimensional resonant tunnelling structures",
keywords = "Scattering matrix",
keywords = "Electron confinement",
keywords = "Lateral mode mixing",
keywords = "Random ionised impurity",
abstract = "This paper presents a numerical simulation technique for quantum-dot-based electronic devices based on the three-dimensional (3D) scattering matrix (S-matrix) theory. Starting from the 3D time-independent Schrödinger equation with scattering boundary conditions, the multi-mode S-matrix and transmission rates are derived and the tunnelling current is calculated based on the global coherent tunnelling model. The present simulation technique is applied for zero-dimensional (0D) resonant tunnelling diodes (RTDs). The effects of a complex mixture of lateral mode conserving and non-conserving tunnelling processes on the I–V characteristics are investigated in terms of multi-mode transmission rates and quasi-bound electronic states at resonance. The simulation is also used for analysing resonant tunnelling (RT) assisted by ionised impurities in a quantum dot. By introducing ionised impurities in the quantum dot region, a new type of RT via single-impurity-induced quasi-bound states is investigated."
}
@article{M19991019,
title = "Kinetics of quantum states in quantum cascade lasers: device design principles and fabrication",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "1019 - 1029",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00055-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000555",
author = "M. and Razeghi",
keywords = "Quantum cascade laser",
keywords = "Quasi-bound state",
keywords = "Continuous wave",
abstract = "Quantum cascade lasers are based on radiative transition between quasi-bound states formed by superlattices in the presence of high electric field. In order to understand the device principle so that we can explain and predict which structures perform better, it is necessary to develop a microscopic model for carrier and current distribution among these quasi-bound states. A mathematical model and simulation results for the kinetics of these quantum states in quantum cascade lasers are presented in comparison with our experimental results. The role of the ratio between inter- and intrasubband scattering rates, and the presence of non-equilibrium phonons are identified with explicit calculation. Our preliminary experimental results and calculation show that the lasers can have very high T0 up to 210 K and very low threshold current density of Jth=3.4 kA/cm2 at 300 K with the current design. However, it is emphasized that in order to further improve the device performance at high temperature, it is very important to devise a structure that can dissipate the generated phonons much more efficiently."
}
@article{RamMohan19991031,
title = "Wave function engineering of antimonide quantum-well lasers",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "1031 - 1042",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00057-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000579",
author = "L.R. Ram-Mohan and I. Vurgaftman and J.R. Meyer",
keywords = "Wave function engineering",
keywords = "Quantum-well lasers",
keywords = "Semiconductor heterostructures",
keywords = "Finite element method",
abstract = "We present a variational approach to the calculation of band structure for semiconductor heterostructures. The time-independent action integral is minimized to derive a discretized version of the coupled Schrödinger equations within the multi-band envelope function approximation. This leads to a clear procedure for systematically improving the solutions. The numerical implementation of this method has provided the impetus towards the development of wave function engineering, which may be defined as the ability to specify the localization of carrier wave functions in quantum semiconductor nanostructures through control over the growth, geometry, and material composition. Recent developments in the design and successful implementation of type-II antimonide quantum-well lasers have been a direct consequence of the application of wave function engineering. Various aspects of the laser design for high temperature and high efficiency operation are considered, and a comparison of the theory with experimentally demonstrated devices is made."
}
@article{RQ19991043,
title = "Mid-infrared interband cascade lasers based on type-II heterostructures",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "1043 - 1056",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00061-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000610",
author = "R.Q. and Yang",
keywords = "Interband cascade lasers",
keywords = "Type-II heterostructures",
keywords = "MId-infrared",
abstract = "Interband cascade lasers take advantage of the broken-gap band alignment in type-II InAs/Ga(In)Sb heterostructures to reuse electrons for sequential photon emissions from successively connected active regions; thus, they represent a new type of mid-IR light source. The mid-IR interband cascade lasers have recently been demonstrated with large peak optical output powers (∼0.5 W/facet), high differential external quantum efficiency (>200%), and near-room-temperature operation (286 K). Also, emission wavelength from interband cascade light-emitting diodes has been extended to as long as 15 μm; thus verifying the unique capability of this Sb-family type-II heterostructure system to be tailored over a wide spectral range. In this work, the explorations toward the demonstration and improvement of these interband cascade lasers will be reviewed. The features and issues related to the design and modeling of the interband cascade lasers will also be discussed in connection with device performance."
}
@article{Gunapala19991057,
title = "Significance of the first excited state position in quantum well infrared photodetectors",
journal = "Microelectronics Journal",
volume = "30",
number = "10",
pages = "1057 - 1065",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00056-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000567",
author = "S.D Gunapala and S.V Bandara",
keywords = "Quantum wells",
keywords = "Intersubband absorption",
keywords = "Infrared detectors",
abstract = "Exceptionally rapid progress has been made during the last few years in the performance of GaAs/AlGaAs based quantum well infrared photodetectors (QWIPs), starting from bound-to-bound which has relatively lower sensitivity, and culminating in high performance bound-to-quasibound QWIPs. In this article, we discuss and compare the dependence of absorption, responsivity, dark current, and detectivity of QWIPs with the position of the first excited state in the quantum well."
}
@article{Fissore1999833,
title = "Application of α-C:H films to masking etching of silicon dioxide",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "833 - 836",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00018-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900018X",
author = "A. Fissore and M.A.R. Alves and E. da Silva Braga and L. Cescato",
keywords = "Hydrogenated carbon",
keywords = "Fluoridric acid",
keywords = "Silicon dioxide",
abstract = "Amorphous hydrogenated carbon (α-C:H) thin films deposited by rf chemical vapor deposition were applied to masking the etching of silicon dioxide (SiO2) by the aqueous solution of fluoridric acid (HF). Films with thickness of approximately 100 nm were successfully patterned on SiO2 by the lift-off process. Then the masked samples were submitted to an aqueous HF solution at room temperature. The inspection showed well-defined etching pattern indicating the high performance of the α-C:H for this application."
}
@article{Bhaskar1999837,
title = "New current-mode universal biquad filter",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "837 - 839",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00019-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000191",
author = "D.R. Bhaskar and V.K. Sharma and M. Monis and S.M.I. Rizvi",
keywords = "Second generation current conveyors",
keywords = "Active and passive sensitivity",
keywords = "PSpice simulation results",
abstract = "A new current-mode universal biquadratic filter using only two second generation current conveyors and a minimum number of passive components is presented. The proposed configuration can realize the second-order low pass, high pass, band pass and band reject responses simultaneously. The validity of the proposed formulation is confirmed by PSpice simulation results."
}
@article{Eltawil1999841,
title = "New precise Spice macromodels for the current-feedback operational amplifier",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "841 - 849",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00020-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000208",
author = "M.H Eltawil and A.M Soliman",
keywords = "Current feedback operational amplifier",
keywords = "Spice macromodel",
abstract = "Two new linear, frequency-dependent macromodels for the Current-Feedback Operational Amplifier (CFOA) are introduced. Both macromodels simulate the actual performance of typical CFOAs for a wide range of frequencies. The first proposed macromodel suits manual calculations due to its relatively simple mathematical model. The second proposed macromodel shows more accurate results but is described through a more complex set of mathematical equations. Both macromodels present performance advantages over previously introduced macromodels."
}
@article{Ng1999851,
title = "Energy-recovery flip-flop design using improved adiabatic pseudo-domino logic structure",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "851 - 854",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00022-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000221",
author = "K.W Ng and K.A Ng and K.T Lau",
keywords = "SR flip-flop and JK flip-flop designs",
keywords = "Improved adiabatic pseudo-domino logic",
keywords = "HSPICE simulations",
abstract = "Adiabatic or energy-recovery logic families have been reported in the literature for low-power applications (A.G. Dickinson, J.S. Denker, Adiabatic dynamic logic, IEEE Journal of Solid-State Circuits 30(3) (1995) 311–315; D. Maksimovic, V.G. Oklobdzija, Clocked CMOS adiabatic logic with single AC power supply, in: Proceedings of the Twenty-First European Solid-State Circuits Conference, 1995, pp. 370–373; Y. Moon, D.K. Jeong, An efficient charge recovery logic circuit, IEEE Journal of Solid-State Circuits 31(4) (1996) 514–522; W.Y. Wang, K.T. Lau, Adiabatic pseudo-domino logic, Electronics Letters 31(23) (1995) 1982–1983; K.T. Lau, F. Liu, Improved adiabatic pseudo-domino logic family, Electronics Letters 33(25) (1997) 2113–2114; K.T. Lau, F. Liu, Four-phase improved adiabatic pseudo-domino logic, Electronics Letters 34(4) (1998) 343–344; S.M. Yoo, S.M. Kang, A bootstrapped NMOS charge recovery logic, in: Proceedings of the IEEE Great Lakes Symposium on VLSI, 1998, pp. 30–33). These designs have concentrated on combinational logic. In this article, SR flip-flop and JK flip-flop designs based on the Improved Adiabatic Pseudo-Domino Logic (IAPDL) circuit structure and the auxiliary clocking system of the IAPDL-4φ (four-phase IAPDL) are presented. Besides the reduced transistor count, HSPICE simulations performed indicate significant improvement in terms of power consumption over CMOS transmission gate-based flip-flops."
}
@article{Aceves1999855,
title = "Study on the Al/silicon rich oxide/Si structure as a surge suppressor, DC, frequency response and modeling",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "855 - 862",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00023-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000233",
author = "M Aceves and J Pedraza and J.A Reynoso-Hernandez and C Falcony and W Calleja",
keywords = "Al/silicon rich oxide/Si",
keywords = "Surge suppressor",
keywords = "Semi-insulating polysilicon",
abstract = "In this work the possibility of using the Al/SRO/Si device as a surge suppressor is studied. DC, AC, and the frequency response of the device were investigated. Also the device was exposed to high voltage peaks. The High voltage peaks were generated using the human body model. Two devices were tested: simple MOS like capacitors, and input pads made of Al/SRO/Si connected to the gate of MOS transistors. Results show that these devices can uphold voltage peaks as big as 66 MV/cm and that they can be used for low frequency applications. It is also shown that, transistor gates connected to these input pads support higher voltage peaks compared with gates connected to standard input pad."
}
@article{Elwakil1999863,
title = "Three-phase oscillator modified for chaos",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "863 - 867",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00024-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000245",
author = "A.S. Elwakil and M.P. Kennedy",
keywords = "Multiphase sinusoidal oscillators",
keywords = "Chaotic oscillator",
abstract = "A three-phase sinusoidal oscillator employing negative-type second-generation current conveyors (CCII) is modified for chaos using a recently introduced grounded diode-inductor composite. The resulting chaotic oscillator is described by a fifth-order system of differential equations with switching-type nonlinearity. A possible implementation based on current feedback op amps (CFOAs) is investigated. PSpice circuit simulations agree well with numerical simulations of the derived mathematical model."
}
@article{Abuelma'atti1999869,
title = "Electronically tunable capacitance multiplier and frequency-dependent negative-resistance simulator using the current-controlled current conveyor",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "869 - 873",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00025-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000257",
author = "M.T Abuelma'atti and N.A Tasadduq",
keywords = "Capacitance multiplier",
keywords = "Frequency-dependent negative-resistance",
abstract = "Electronically tunable capacitance multipliers and a frequency-dependent negative-resistance (FDNR) are presented in this article. The multiplying factors of the capacitance multipliers and the value of the FDNR are tunable by adjusting the bias current of a plus-type current-controlled current-conveyor (CCCII+). The feasibility of obtaining temperature-independent capacitance multiplication factors is explored and the SPICE simulation results included."
}
@article{Torelli1999875,
title = "Mixed serial–parallel sensing scheme for a 64-Mbit 4-bit/cell factory-programmed OTP-ROM",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "875 - 886",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00026-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000269",
author = "G. Torelli and A. Manstretta and R. Gastaldi and P. Rolandi",
keywords = "Multilevel memory",
keywords = "Serial–parallel sensing",
keywords = "One-time programmable memory",
keywords = "Binary-search",
abstract = "This article presents a sensing scheme for multilevel (ML) non-volatile memories. Sensing is accomplished following a mixed serial–parallel approach: a memory cell is read according to a binary-search algorithm where each search step carries out a given number of simultaneous comparisons between its content and adequate references. Two sensing steps, each performing three parallel comparisons, are able to detect as many as 4 bits per cell (16 levels). Only three sense amplifiers are required per each cell to be read simultaneously. To obtain tight current distributions (within 3 μA) for the programmed states, as required for safely storing and sensing 4 bits per cell, a highly-parallel ML factory-programming technique for one-time programmable ROMs is used. Simulated access time for a 16-level-cell 64-Mbit device in a mature double-poly single-metal 0.4 μm CMOS EPROM technology is ∼120 ns when using 3 V power supply."
}
@article{Ročak1999887,
title = "Comparison of new no-clean fluxes on PCBs and thick film hybrid circuits",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "887 - 893",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00027-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000270",
author = "D. Ročak and K. Bukat and M. Zupan and J. Fajfar-Plut and V. Tadić",
keywords = "No-clean fluxes",
keywords = "Surface insulation resistance",
keywords = "Electromigration",
keywords = "PCB",
keywords = "Thick film hybrid circuit",
abstract = "Some new no-clean fluxes were investigated by measurement of ionic contamination of flux residues and influence of flux residues on surface insulation resistance (SIR) and electromigration (EM) between soldered conductors. Also copper corrosion test in the humidity chamber was performed on samples with fluxes investigated. The results of SIR, EM and copper corrosion tests were compared on test samples prepared as printed circuits and hybrid circuits."
}
@article{Güneş1999895,
title = "An nth-order allpass voltage transfer function synthesis using commercially available active components",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "895 - 898",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00028-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000282",
author = "E.O Güneş and F Anday",
keywords = "AD844",
keywords = "Current feedback amplifier",
keywords = "Voltage transfer function",
keywords = "Signal flow graphs",
abstract = "A general synthesis procedure for the realisation of an nth-order allpass voltage transfer function using an active RC circuit comprising a commercially available active component current feedback amplifier (CFA, i.e. AD844), which contains a plus-type second generation current conveyor (CCII+) and a unity-gain voltage buffer is presented."
}
@article{Manimaran1999899,
title = "Realization of nanopillars on GaAs quantum well structure grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "899 - 903",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00030-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000300",
author = "M. Manimaran and P.R. Vaya",
keywords = "Molecular beam epitaxy",
keywords = "Nanofabrication",
keywords = "Nanopillars characterization",
keywords = "GaAs quantum well",
abstract = "A double barrier heterostructure grown on a n++ GaAs substrate by Molecular Beam Epitaxy (MBE) was used for the fabrication of random dot pillar arrays of p–i–n quantum well nanoscale devices. The nanostructure was fabricated so as to get the vertical confinement of carriers within the undoped GaAs quantum well (QW) layer of 9 nm thick sandwiched between two Al0.33Ga0.67As of 11 nm thick barrier layers using the conventional lithographic and Reactive Ion Etching (RIE) techniques. The width of the pillars had the range of 10–50 nm and the height of the pillars varied from 185 to 250 nm by controlling the etching time from 90 to 180 s, respectively. These nanopillars were characterized by the SEM and the nanoscale structure of the pillars was studied by the Scanning Tunneling Microscope (STM) by applying a negative bias voltage of 3635 mV and the tunneling current of 2.61 nA. The light emission was detected from the nanopillars when applying a forward bias voltage of 1.3 V at 4 K and the emitted light was observed at 830 nm."
}
@article{Lim1999905,
title = "Low noise digital data driver circuit integrated poly-Si TFT-LCD",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "905 - 910",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00036-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000361",
author = "K.M Lim and M.Y Sung",
keywords = "Digital-to-analog converters",
keywords = "Data driver",
keywords = "Thin film transistor",
abstract = "We have newly designed a data driving circuit of the digital type for TFT-LCDs with high performance integrated circuit. The main advantages of this circuit are: (1) low noise digital driver including simple digital-to-analog converters (DACs), (2) easy selection of inversion method (row/column/dot), (3) capability of data error correction, and (4) driving scheme by line at a time. The line-by-line digital type is suitable for large TFT-LCDs. It consists of a pair of latches and DACs. All video signals stored in the first latches are written to the second latches simultaneously in each horizontal scanning period. Good horizontal resolution is obtained in this driver because the DACs write the video signals of the data lines as long as they are in the horizontal scanning period. This is long enough even if the capacitance of the data line is very large. Also, the new designed data driver architecture can be easily extended to higher bit signals scheme and has realized a good gray scale."
}
@article{Abuelma’atti1999911,
title = "New negative immittance function simulators using current conveyors",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "911 - 915",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00037-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000373",
author = "M.T. Abuelma’atti and N.A. Tasadduq",
keywords = "Immittance simulators",
keywords = "Current conveyors",
abstract = "New negative parallel immittance simulators using current conveyors are presented. From the basic configurations many kinds of grounded capacitor simulators are derived. SPICE simulation results obtained from a second-order highpass filter structure using one of the proposed simulators are included."
}
@article{tagkey1999917,
title = "Erratum",
journal = "Microelectronics Journal",
volume = "30",
number = "9",
pages = "917 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00100-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299001007",
key = "tagkey1999917"
}
@article{Chen1999725,
title = "IC yield estimation at early stages of the design cycle",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "725 - 732",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00158-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800158X",
author = "Tom Chen and Von-Kyoung Kim and Mick Tegethoff",
keywords = "Yield estimation",
keywords = "Yield prediction",
keywords = "Standard cell design",
keywords = "Early yield estimation",
keywords = "SRAM",
keywords = "Yield model",
keywords = "Sensitive area",
keywords = "Inductive fault analysis(IFA)",
abstract = "A yield prediction in the early stage of the design cycle can give positive impacts on cost and quality of IC manufacturing. However, the lack of prediction tool, that do not rely on layout data, makes it difficult to estimate the chip yield in the early design phase. This article describes yield prediction models for random logic and SRAM blocks using inductive fault analysis. The proposed model predicts defect sensitive area early in the design cycle as a function of simple circuit parameters without using any layout data. We applied both models to commercial ASIC products for validation. The IC yield estimation using the sensitive area model showed an acceptable accuracy of a well below 10 % error."
}
@article{Chen1999733,
title = "IC manufacturing test cost estimation at early stages of the design cycle",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "733 - 738",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00159-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001591",
author = "Tom Chen and Kim Von-Kyoung and Mick Tegethoff",
keywords = "Manufacturing test cost",
keywords = "Cost model",
keywords = "Cost prediction",
keywords = "Test time",
abstract = "This article presents a test cost prediction model as a planning tool at an early stage of the design cycle to estimate manufacturing test cost of ICs. The proposed cost model estimates the IC manufacturing test cost based on test throughput. The model calculates test throughput by incorporating IC yield and fault coverage. Chip manufacturing information was used to predict the test cost and test quality in IC manufacturing test. The objective of the cost model is to better plan IC product design and reduce cost by predicting the IC manufacturing test cost at an early stage of the design cycle without relying on detailed information such as layout or even netlist. The proposed model was applied to a commercial ASIC product. The model estimation result showed an acceptable accuracy as a first order approximation tool."
}
@article{Elwakil1999739,
title = "Inductorless hyperchaos generator",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "739 - 743",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00163-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001633",
author = "A.S. Elwakil and M.P. Kennedy",
keywords = "Chaos",
keywords = "Hyperchaos",
keywords = "Current feedback op amp",
abstract = "A novel inductorless hyperchaos generator is proposed. The generator employs two identical linear current negative impedance converters (INICs) as the only active building blocks while nonlinearity is introduced via two generic signal diodes. The structure is truly inductorless as it is not based on active R–C emulation of passive inductors. A circuit implementation of the generator using current feedback op amps (CFOAs) is constructed and investigated both experimentally and using PSpice simulations. The generator is described by a fifth-order system of ordinary differential equations. Numerical simulation of the derived mathematical model is included and the positive Lyapunov exponents are estimated."
}
@article{Yoon1999745,
title = "Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "745 - 752",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00164-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001645",
author = "S.F Yoon and A.H.T Kam and B.P Gay and H.Q Zheng and G.I Ng",
keywords = "Pseudomorphic high electron mobility transisitor",
keywords = "Transconductance",
keywords = "Auger recombination",
abstract = "The performance of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) was simulated using a two-dimensional device simulator, MEDICI [(Two-Dimensional device Simulation Program, Technology Modeling Associates Inc., Sunnyvale, CA, 1997)1]. Physical models used in the simulation include Shockley–Read Hall recombination, Auger recombination, Fermi–Dirac statistics and field-dependent mobility. Key results presented include the transconductance, current gain cut-off frequency and current–voltage (I–V) characteristics. We compared the simulated performance to two fabricated devices of different gate lengths and obtained a good match between our simulation results and measured data. These results show that the chosen physical models applied by the two-dimensional device simulation program is viable for a fast turn-around study and development of p-HEMT devices prior to fabrication."
}
@article{Ismail1999753,
title = "A new family of highly linear CMOS transconductors based on the current tail differential pair",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "753 - 767",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00165-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001657",
author = "A.M Ismail and S.K ElMeteny and A.M Soliman",
keywords = "CMOS transconductors",
keywords = "Differential pair",
abstract = "A new family of linear differential transconductors based on the current tail differential pair is presented. The proposed transconductor employs MOS transistors operating in the saturation region. It is shown that the proposed transconductors offer superior linearity and wider range in addition to the simplicity and high frequency response, which characterizes the current tail differential pair transconductor. PSpice simulation results are given."
}
@article{Sfaxi1999769,
title = "Enhanced electron density in two Si δ-doped Al0.33Ga0.67As/GaAs heterojunctions",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "769 - 772",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00167-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001670",
author = "L. Sfaxi and L. Bouzaı̈ene and H. Maaref",
keywords = "Hall measurements",
keywords = "Quantum well",
keywords = "DX center effect",
abstract = "We have investigated the electronic properties of the δ-doped Al0.33Ga0.67As/GaAs heterojunction such as the electron density. We have also examined the case where the δ- doping is placed in a thin AlxGa1−xAs quantum well embedded in the Al0.33Ga0.67As barrier. This is intended to reduce the DX centers effects. In this context, we have grown a series of silicon δ-doped Al0.33Ga0.67As/GaAs heterostructures having various alloy compositions in the AlxGa1−xAs quantum well (xAlwell). Hall measurements were performed on these samples in the temperature range 4–300 K. A self-consistent analysis (Schrödinger and Poisson equations) is made on these silicon δ-doping systems. Moreover, a comparison between the theoretical and experimental results shows an agreement between them."
}
@article{Singla1999773,
title = "A special mode of AC switching for the electronic material As10Ge15Te75",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "773 - 781",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00168-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001682",
author = "C.R. Singla and C.L. Mittal",
keywords = "As10Ge15Te75 pellets",
keywords = "AC conductance",
keywords = "Temperature, pressure and frequency dependence",
abstract = "The article reports for the first time some new results obtained for the memory device using As10Ge15Te75 in the form of a compressed pellet. The measurements of the dependence on temperature, pressure and frequency of AC conductance and threshold voltage were made by subjecting the material to different DC voltages. The study reveals that (i) the AC conductance of the material increases with increasing temperature and pressure, (ii) the AC component of the total current decreases when the device is switched on by the application of DC bias across the device, (iii) the magnitude of frequency dispersion reduces considerably when the device is switched from the OFF to ON state, (iv) the value of threshold voltage, at given temperature, decreases when the device is subjected to a higher pressure, (v) the threshold voltage, at a given pressure decreases with increasing temperature, and (vi) the threshold voltage has a linear dependence on the product of temperature and pressure. To test the stability of the device-material, the article also reports measurements of AC conductivity and threshold voltage after subjecting the material to a rigorous strain under different stimuli, i.e. a temperature cycle (−15°C to +35°C), a pressure cycle (1 atmosphere to 10,000 Psi), and a DC voltage cycle (from −35 to +35 V). The results of measurements provide an evidence to the effect that even such low temperatures and pressure can induce structural changes in As10Ge15Te75 resulting into its enhanced conductivity and a fall in the value of threshold voltage."
}
@article{Towe1999783,
title = "Optoelectronic devices on novel index surfaces",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "783 - 791",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00185-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001852",
author = "E. Towe and P.A. Ramos and J. Xu and R.H. Henderson",
keywords = "Optoelectronic devices",
keywords = "Epitaxial layers",
keywords = "Crystallographic orientations",
keywords = "Blue-green second-harmonic laser",
keywords = "Polarization–rotation modulator",
abstract = "Nearly all practical optoelectronic devices are fabricated from epitaxial layers synthesized on [001]-oriented GaAs or InP substrates. The primary reason for this choice of substrate orientation is its wide availability and ease of epitaxial growth on it. In recent years there has been a growing interest in exploring other crystallographic substrate orientations. This interest stems from the novel physical properties that are often found in structures grown on substrates other than the (001). In this article we discuss the use of the (112) and the (110) surfaces for the fabrication of two optoelectronic devices that cannot otherwise be fabricated from structures grown on the conventional (001) surface. These devices are: a blue-green second-harmonic laser and a polarization–rotation modulator."
}
@article{Das1999793,
title = "Discrimination of individual gas/odor using responses of integrated thick film tin oxide sensor array and fuzzy-neuro concept",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "793 - 800",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00016-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000166",
author = "R.R. Das and K.K. Shukla and R. Dwivedi and A.R. Srivastava",
keywords = "Intelligent gas sensor",
keywords = "Neural network classifier",
keywords = "Tin oxide sensor",
abstract = "A new neural network classifier for an Intelligent Gas Sensor (IGS) application is presented. The classifier is trained on fuzzyfied training set. Its superior classification and learning performance is demonstrated for discrimination of alcohols and alcoholic beverages using published data of thick film tin oxide sensor array fabricated and characterized at our laboratory. The new model proposed in this article not only gives a steep and monotone learning curve, but also exhibits lower sensitivity to learning parameter choices."
}
@article{Zhang1999801,
title = "Effects of high energetic He+ ion irradiation on the structure of polymeric hydrogenated amorphous carbon",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "801 - 805",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00017-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000178",
author = "Q. Zhang and S.F. Yoon and J. Ahn and Rusli and H. Yang and C. Yang and F. Watt and E.J. Teo and T. Osipowice",
keywords = "He+ ion irradiation",
keywords = "Dehydrogenation",
keywords = "Carbon rebonding",
abstract = "The effects of 2 MeV He+ ion irradiation on the structure of polymeric hydrogenated amorphous carbon films were studied. It was found that after the irradiation up to a dose of 1.0×1016 cm−2, the carbon network transforms from a polymer-like to a diamond-like structure, as evidenced using Raman spectroscopy. Correspondingly, the optical band gap shrinks from 3.0 to 2.0 eV and the refractive index increases from 1.5 to 1.7. The processes of dehydrogenation and carbon rebonding into hydrogen-free C(sp3) and C(sp2) clusters under the impact of the incident ions are suggested to account for the carbon structural transformation."
}
@article{M1999807,
title = "Digital Signal Processing: A Computer Based Approach. Sanjit K. Mitra. McGraw-Hill, New York, 1998, hardcover, 864pp., £68.99 ISBN 0-07-042953-7",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "807 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00072-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800072X",
author = "M and Stojćev"
}
@article{MS1999808,
title = "VLSI Testing; Digital and Mixed Analogue/Digital Techniques; by S.L. Hurst; The Institution of Electrical Engineers, London, 1988 (reprinted with corrections), 532 pp., ISBN 0-85296-901-5, £48.00",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "808 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00005-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000051",
author = "M.S. and Harris"
}
@article{M1999808,
title = "The 8051 Microcontroller, 3rd ed., I. Scott Mackenzie, Prentice Hall, Upper Saddle River, New Jersey, 1999, hardcover, 366pp., $36.95, ISBN 0-13-780008-8",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "808 - 809",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00032-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000324",
author = "M. and Stojčev"
}
@article{M1999809,
title = "A VHDL PRIMER, 3rd ed. J. Bhasker, Prentice Hall PTR, Upper Saddle River, New Jersey 07458, 1999, hardcover, 373pp., $64,49, ISBN 0-13-096575-8",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "809 - 810",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00033-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000336",
author = "M and Stojčev"
}
@article{tagkey1999811,
title = "Erratum to Sun Ming, Michael Pecht, Marjorie Ann E. Natishan, A comparative assessment of gold plating thickness required for stationary electrical contacts: [Microelectronics Journal, 30 (1999) 217–222]",
journal = "Microelectronics Journal",
volume = "30",
number = "8",
pages = "811 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00066-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900066X",
key = "tagkey1999811"
}
@article{Gruzza1999625,
title = "A study of the Au/Pd interface formation using the elastic peak electron spectroscopy method",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "625 - 629",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00002-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000026",
author = "B. Gruzza and C. Robert and L. Bideux and J.M. Guglielmacci",
keywords = "Au/Pd interface",
keywords = "Elastic peak electron spectroscopy",
keywords = "Monte-Carlo simulation",
abstract = "The objective of this study is to exhibit the capabilities of the elastic peak electron spectroscopy for interface study. The metallic system Au/Pd is an interesting one, it is sharp and the growth of gold stacking atomic layers follows a Franck Van Der Merwe mode. Monte-Carlo simulation is used to support the experimental results obtained with a cylindrical mirror analyser. Measurements are depending on the geometry of the analysis system and this can be shown by the relief of three-dimensional images. With a good choice of the primary energy value, depth penetration given by the computer calculations indicates that only the two first layers contribute for the main in the backscattering process."
}
@article{Smaoui1999631,
title = "Optical properties of type II short-period GaAs/AlAs superlattices under stress effects",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "631 - 636",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00003-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000038",
author = "F. Smaoui and M. Maaref and R. Planel",
keywords = "Superlattices",
keywords = "Optical transitions",
abstract = "We report the photoluminescence (PL) studies of two ultra-short type II GaAs/AlAs superlattices (SLs) deposed, respectively, on GaAs and Ga1−xInxAs substrates. The strain induced by the lattice mismatch involved by Ga0.88In0.12As substrate modifies the symmetry of the X conduction ground state in the opposed sense than that involved by the GaAs substrate. We have studied the effects of stress on the conduction and valence band structures."
}
@article{Borgi1999637,
title = "Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "637 - 641",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00004-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929900004X",
author = "K. Borgi and F. Hassen and H. Maaref and A. Daami and G. Bremond",
keywords = "Uncapped InP islands",
keywords = "Photoluminescence",
keywords = "Wetting layer",
abstract = "In this article, we study the formation of self-assembling uncapped InP islands grown by metal organic vapor phase epitaxy on (100) GaP. Statistical analysis of the AFM data for this fresh sample show three-modal distribution of vertical height InP islands with elliptical base shape. At low temperature, linearity of islands (wetting layer (WL)) photoluminescence (PL) integrated emission with excitation power indicated low defect density on island (WL) interfaces. Uncapped InP islands are unstable with time, their size increases as their surface density decrease and their height distribution change with time. However, a broadening in PL spectra is observed as a function of time. This broadening can be correlated to the rearrangement versus time of the island height distribution as seen by AFM analysis."
}
@article{Benbakhti1999643,
title = "Effect of lateral diffusion on the photoluminescence intensity of semiconductor compounds: study of theoretical three-dimensional photoluminescence",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "643 - 649",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00006-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000063",
author = "T. Benbakhti and D. Mehal and S.K. Krawczyk and G. Bassou",
keywords = "Photoluminescence",
keywords = "Lateral diffusion",
keywords = "Semiconductor compounds",
abstract = "A complicated three-dimensional system (x, y, z) is rigorously analysed in this work enabling one to calculate the photoluminescence intensity (IPL) of semiconductor compounds. A number of methods have been devised whereby numerical solutions of the diffusion equation can be obtained. This three-dimensional model is necessary in measurements of photoluminescence at a high resolution which only needs a very small excitation spot. We show examples of our calculation on semiconductor compounds and demonstrate the difference with the results in a unidimensional system, explained by the effect of lateral diffusion. The data obtained are treated and give several internal structural parameters. Our three-dimensional model can be applied to substrate, epitaxial and SOI (silicon-on-insulator) structures."
}
@article{Buchheit1999651,
title = "Residual strain mapping in III–V materials by spectrally resolved scanning photoluminescence",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "651 - 657",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00007-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000075",
author = "M. Buchheit and A. Khoukh and M. Bejar and S.K. Krawczyk and R.C. Blanchet",
keywords = "Residual strain",
keywords = "Photoluminescence",
keywords = "Dislocation",
abstract = "This article introduces a new approach, founded on room temperature spectrally resolved scanning photoluminescence (SR-SPL) for non-destructive and quantitative mapping of the residual strain in compound semiconductor materials. Residual strains in a two inch diameter (001) wafer, sliced from semi-insulating GaAs ingot grown by the liquid encapsulated Czochralski (LEC), were characterized by measuring the strain induced modification of the photoluminescence (PL) spectra. The hydrostatic component εH of the residual strain which is the sum of the tensile strains along the x, y and z crystallographic axes is quantitatively evaluated. Its two-dimensional distribution map exhibits a fourfold symmetry and has larger values along the 〈110〉 direction than along the 〈010〉 direction. The results are compared to the etch pits density (EPD) and the PL intensity distributions. It is found that the residual strain map is anti-correlated with the PL intensity and the EPD maps. A model for the observed feature is also discussed."
}
@article{Benamara1999659,
title = "Characterization of the M.S structure by the surface photoelectrical voltage method",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "659 - 664",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00008-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000087",
author = "Z Benamara and B Akkal and A Boudissa and L Bideux and B Gruzza",
keywords = "Photovoltage",
keywords = "Schottky effect",
keywords = "Surface barriers",
abstract = "Photovoltages (surface photovoltage plus Dember voltage) were calculated, taking into consideration the influence of charge exchange between a continuum of surface states and the semiconductor, the barrier lowering as a result of the Schottky effect, the applied voltage drop and transmission coefficient across the interfacial layer. For moderate band bending, the photovoltage depends on several parameters which renders their reliable determination very difficult. For extreme band bending, however, only doping factor, mobility ratio and relative excess concentration enter into given formulas. The obtained analytical expression includes saturation effects at the surface, so that the photovoltage (SPV) does not exceed the thermodynamic band bending. The bulk effect of the Dember voltage is then added to obtain the relationship between the light generated current and open circuit voltage at the terminals. Results were applied to Schottky barrier diodes Au/InP(n). The InP substrate is restructured by some monolayers of InSb thin film [L. Bideux, B. Gruzza, A. Porte, H. Robert, Surface and Interface Analysis 20 (1993) 803]. Good agreement between parameters determined in this way and otherwise indicates the validity of the model and the approximations used in this work."
}
@article{DW1999665,
title = "Characterisation of semiconductor heterostructures by capacitance methods",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "665 - 672",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00040-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000403",
author = "D.W and Palmer",
keywords = "Semiconductor",
keywords = "Heterostructures",
keywords = "Band offsets",
keywords = "C–V Intercept",
keywords = "C–V Charge-Profiling Method",
keywords = "Carrier traps",
abstract = "Investigations of the steady-state and transient electrical capacitance properties of semiconductor heterostructures allow determination of the conduction-band and valence-band energy offsets that occur at the interfaces between materials of different band-gaps and of the presence of carrier-trapping states both in the materials and at the interfaces. For determination of band offsets, the main technique is C–V measurement, i.e. the measurement of the steady-state small-signal (differential) capacitance as a function of applied voltage, and this paper outlines the C–V Intercept and C–V Charge-Profile Methods. Concerning electron and hole trapping in heterostructures, including that in quantum well structures, the presence, concentrations and energy levels of such carrier trapping states can be effectively determined by the C–V–T and DLTS techniques. This paper outlines the principles of these techniques for studying heterostructures, and gives examples of data and results."
}
@article{Akkal1999673,
title = "Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "673 - 678",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00009-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000099",
author = "B. Akkal and Z. Benamara and L. Bideux and B. Gruzza",
keywords = "Interfacial state density",
keywords = "Current–voltage",
keywords = "Capacitance–voltage",
abstract = "In this work, we measure the current–voltage (I–V) and the capacitance–voltage (C–V) characteristics of the Au/InP(100) and Au/InSb/InP(100) Schottky type diodes. The InP(n) substrate is restructured by some monolayers of the InSb thin film. We then propose a study of the electrical quality of the elaborated components after the Au/InP interface creation; first without annealing and then after annealing by heating at 500°C temperatures. Analysis of the measured I(V) characteristics for the Au/InP and Au/InSb/InP samples allows the determination of the electrical parameter variations. The saturation current Is, the serial resistance Rs, the mean ideality factor n and also the barrier height φBn, are respectively equal to 2.10×10−4 A, 19 Ω, 1.8 and 0.401 eV for the Au/InP sample and equal to 1.34×10−7 A, 175 Ω, 1.78 and 0.592 eV for the Au/heated InSb/InP. Another good result is that the analysis and simulation of the I(V) and the C(V) characteristics allows us to determine the very important mean interfacial state density Nss(mean), and is obtained to be equal 4.23×1012 eV−1 cm−2 for the Au/InP sample and equal to 4.42×1012 eV−1 cm−2 for the Au/heated InSb/InP. This work thus permits the evolution study of these electrical parameters related to the restructuration conditions."
}
@article{Dib1999679,
title = "C(V) characterization of metal/polysilicon/oxide/monosilicon structure",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "679 - 683",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00010-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000105",
author = "H Dib and Z Benamara and A Boudissa and B Zebentout and R Naoum and F Raoult",
keywords = "C(V) characterization",
keywords = "Polysilicon",
keywords = "Monosilicon",
keywords = "MSPOS structure",
keywords = "Doping",
abstract = "In this work, we present the C(V) capacitance characteristics of metal/polysilicon/silicon oxide/monosilicon (MSPOS) structures. From the obtained C(V) curves, we have studied the behavior of the capacitance at high frequency, the effect of the monosilicon doping on the C(V) characteristics and extracted the physical and technological parameters of the structure. The shape of the obtained curves is different from the classical C(V) characteristics. The curve presents a combination of two C(V) characteristics of the MOS and MOSP structures. One result was with positives bias voltages, the other with negative voltages. For a substrate doping concentration NDm=1018 cm−3, the characteristic presents more important capacitance variation compared to one with NDm=1016 cm−3."
}
@article{Kraiem1999685,
title = "Temperature range for re-emission of carriers in GaAs/Ga1−xAlxAs superlattices",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "685 - 688",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00011-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000117",
author = "S. Kraiem and F. Hassen and L. Sfaxi and H. Maaref",
keywords = "Band-gap shrinkage",
keywords = "Nonradiative recombination",
keywords = "Photoluminescence",
keywords = "Quantum wells",
keywords = "Superlattice",
abstract = "The photoluminescence from n-type doped GaAs/Ga0.57Al0.43As single quantum well (QW) and GaAs/Ga0.54Al0.46As superlattice (SL) heterostructures grown by molecular beam epitaxy was studied in the temperature range 10<T<300 K. The temperature dependence of the QW emission energy follows the band-gap shrinkage of bulk GaAs. The integrated intensity observed under indirect excitation of the GaAs/Ga1−xAlxAs SL drops exponentially by three orders of magnitude above 30 K, with an activation energy of 139 meV in the range 25–45 K, 305 meV in the range 75–160 K and 578 meV in the range 200–300 K. These energies are comparable to the effective barrier height of a light-hole, of an electron and of electron–hole pairs, respectively. The decrease of the integrated intensity is therefore attributed to thermal re-emission of confined carriers out of the QW. Near room temperature, the decrease of the integrated intensity is because of the thermally activated nonradiative recombination."
}
@article{Disseix1999689,
title = "Optical properties of (In,Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "689 - 693",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00012-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000129",
author = "P. Disseix and P. Ballet and C. Monier and J. Leymarie and A. Vasson and A.-M. Vasson",
keywords = "(In,Ga)As/GaAs heterostructures",
keywords = "Optical properties",
keywords = "Indium segregation",
keywords = "Piezoelectric field",
abstract = "Strained layer (In,Ga)As/GaAs quantum wells grown by molecular beam epitaxy on (100) and (111)B GaAs substrates have been investigated by thermally detected optical absorption and electroreflectance. An accurate interpretation of the experimental data is achieved in both cases. The influence of the growth conditions on the indium segregation process in the (100) samples is demonstrated. In the particular case of the (111)B-grown samples, it is shown that segregation must be taken into account for the piezoelectric field determination, and the impact of the built-in electric field on the segregation effects is put in evidence."
}
@article{M’ghaı̈eth1999695,
title = "Porous silicon: photoluminescence decay in the nanosecond range",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "695 - 698",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00013-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000130",
author = "R M’ghaı̈eth and H Maâref and I Mihalcescu and J.C Vial",
keywords = "Porous silicon",
keywords = "Fast band",
keywords = "Decay",
keywords = "Time-resolved luminescence",
keywords = "Intrinsic",
keywords = "Extrinsic",
abstract = "Unlike the slow band (S-band), there is currently no clear spectroscopic signature which links the fast band (F-band) to the Si nanostructure. Time resolved photoluminescence (TRPL) was employed in the present work to study the porous silicon photoluminescence decay behavior in the nanosecond range, namely the F-band. Measurements were performed at room temperature on oxidized and fresh porous silicon samples. It was shown that the fast (ns) component had an extrinsic origin for oxidized samples, while the fresh samples exhibited an intrinsic behavior for both the fast and slow (10 μs) components. The excitation intensity dependence of the PL intensity was studied and showed different behavior of the F-band in both oxidized and fresh samples."
}
@article{Kallel1999699,
title = "Structural and mechanical characterization of in-situ phosphorus-doped rapid transport low pressure chemical vapor deposition polycrystalline silicon films",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "699 - 703",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00014-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000142",
author = "S. Kallel and B. Semmache and M. Lemiti and H. Jaffrezic and A. Laugier",
keywords = "Chemical vapor deposition",
keywords = "X-ray diffraction",
keywords = "Phosphorus doping",
abstract = "Rapid thermal low pressure chemical vapor deposition (RTLPCVD) of in-situ phosphorus-doped (P-doped) polycrystalline silicon (poly-Si) thin films was carried out in a cold-wall rapid thermal processing reactor. Doping was obtained by adding phosphine (PH3=200 ppm) gas to silane (SiH4/Ar=10%) at a process pressure of 2 mbar and a deposition temperature in the 600°C–850°C range. Microstructural and micromechanical properties of the deposited layers were investigated by means of grazing X-Ray Diffraction. It appeared, particularly, that in-situ P-doping is responsible for a small-grained and relatively high stressed structure. However, a post-deposition rapid thermal annealing seems to be beneficial for suitable mechanical applications of in-situ P-doped RTLPCVD poly-Si films."
}
@article{Bouzaı̈ene1999705,
title = "Investigation of two-dimensional electron gas concentration in selectively doped n-AlxGa1−xAs/InyGa1−yAs/GaAs heterostructures",
journal = "Microelectronics Journal",
volume = "30",
number = "7",
pages = "705 - 709",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00015-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000154",
author = "L. Bouzaı̈ene and L. Sfaxi and H. Maaref",
keywords = "Two-dimensional electron gas",
keywords = "High electron mobility transistor",
keywords = "Doping density",
keywords = "Quantum well",
keywords = "Heterostructures",
abstract = "The two-dimensional electron gas (2DEG) concentration of the δ-doped AlxGa1−xAs/InyGa1−yAs/GaAs heterojunction for a variety of different configurations are investigated. The finite differential method to determine the 2DEG concentration, based on the self-consistent calculations of the Schrödinger and Poisson equations are described. The cases where the δ-doping is placed in the AlGaAs barrier (conventional heterojunction) and in a narrow quantum well within the AlGaAs barrier where the Al concentration in the well (xAlwell) is less than in the barrier (xAlBarr) (novel heterojunction) are also examined. This is intended to reduce the effects of DX centres. To improve more the 2DEG concentration, the δSi in a narrow quantum well and the InGaAs layer introduced at the heterointerface between the AlGaAs and the GaAs are combined in only one structure. Further, other important paramerters of the system such as In mole fraction and thickness of InGaAs layer are studied. The variation trends of calculated 2DEG concentrations are in good agreement with the experimental results."
}
@article{Benda1999497,
title = "The quest for the perfect switch",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "497 - 498",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00170-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001700",
author = "Viteszlav Benda and Georges Charitat and Ninoslav Stojadinovic"
}
@article{Rahimo1999499,
title = "Design considerations of the diode effective area with regard to the reverse recovery performance",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "499 - 503",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00171-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001712",
author = "M.T. Rahimo and N.Y.A. Shammas",
keywords = "Reverse recovery performance",
keywords = "Fast power diode",
keywords = "Circuit designer",
abstract = "Previous work has shown that the reverse recovery performance of fast power diodes at low currents becomes more critical because of snappy recovery. At low current densities, the shallower stored charge in the base region leads to a lower reverse recovery charge, and under high commutating di/dts it can lead to snappy recovery and total device failure. In this article, the effect of the current density on the reverse recovery performance is investigated by means of varying the diode effective area rather than the forward current. Simulation and experimental results have shown that at a given forward current and commutating di/dt, snappy recovery occurs for larger device areas with an increase in the reverse recovery charge. The outcome of this work will aid device and circuit designers in reducing the possibilities of device failures by choosing the correct size of diode or the optimum number of diodes in parallel for a certain application and rated current."
}
@article{Napoli1999505,
title = "Fast power rectifier design using local lifetime and emitter efficiency control techniques",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "505 - 512",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00172-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001724",
author = "Ettore Napoli and Antonio G.M Strollo and Paolo Spirito",
keywords = "Local lifetime control",
keywords = "Emitter efficiency",
keywords = "Mixed mode device circuit simulations",
keywords = "Diode performance",
abstract = "Local lifetime control and emitter efficiency control techniques and their effect on static and dynamic behavior of power PiN diode are investigated in this article. Mixed-mode device circuit simulations are used in order to analyze the effect of thickness and position of a reduced lifetime region and of emitter efficiency on the diode. With reference to local lifetime control the emphasis is given on the effect of the position and of the extension of the reduced lifetime region on diode performance. The low lifetime region, result of an induced damage in the epilayer, is approximated with a rectangular shape, and is defined by its thickness, position and lifetime values. The simulations show that the optimal position for the low-lifetime region is at the beginning of the base region on the anode side, while the optimal thickness of the low lifetime region depends on the amount of lifetime killing. The simulation of PiN diodes using emitter efficiency control shows that similar performance is achieved reducing anode doping or reducing anode thickness and that main limitation to their performance is reach-through phenomenon. Both local lifetime control and emitter efficiency control design techniques are shown to be effective in reducing the turn-off time and increasing diode softness with a little worsening of on-state voltage drop."
}
@article{Vobecký1999513,
title = "Open circuit voltage decay lifetime of ion irradiated devices",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "513 - 520",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00173-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001736",
author = "J. Vobecký and P. Hazdra and V. Záhlava",
keywords = "Open circuit voltage decay",
keywords = "Carrier lifetime",
keywords = "Ion irradiation",
abstract = "Open circuit voltage decay method for measuring of excess carrier lifetime is shown to be effective for in-process checking of ion irradiated power diodes. 2.5 kV/100 A P-i-N diodes irradiated by helium ions with different irradiation energies and doses were used for presentation of capabilities of this method. Differences in carrier dynamics during the OCVD process between unirradiated and irradiated devices were studied by use of the device simulation in ATLAS."
}
@article{Chang1999521,
title = "Rare earth doped high barrier height Schottky devices",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "521 - 526",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00174-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001748",
author = "L.B Chang and H.T Wang and Y.C Cheng and T.W Shong and E.K Lin",
keywords = "GaAs",
keywords = "LPE",
keywords = "XPS",
keywords = "MESFET",
keywords = "Rare earth",
keywords = "Schottky diode",
abstract = "Intrinsic semiconductor epilayer are frequently adopted in power devices to increase their BV and decrease their leakage current. High purity Pr2O3-added GaAs liquid phase epitaxial layers are grown with low background carrier concentrations. Their surface chemical structures are investigated by using X-ray photoelectron spectroscopy. As the surface oxidation is lowered, these (Au, Ag, Ni, Pt)/GaAs Schottky structures all show an improved diode property by addition of Pr2O3. The resulting barrier height and ideality factor can be as high as 0.94±0.02 eV and as unitary as 1.03±0.01, respectively. A leakage current of around 0.7×10−6 A and a breakdown voltage of 140 V is also obtained. These grown SDs were also irradiated by gamma-ray for the study of radiation hardness. After 4 h irradiation, all samples are out of function at beginning. However, 4 h latter, because of the nature annealing, the SBH of those added samples can recover to 72% of their original SBH values. Further, another 24 h past, the tendency of recovery is saturated and a 19% SBH retard is still left. During this period, the appropriate Pr2O3-added SDs show out better radiation hardness property with compare to the unadded one."
}
@article{Elford1999527,
title = "The numerical modelling of silicon carbide high power semiconductor devices",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "527 - 534",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00175-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800175X",
author = "A. Elford and P.A. Mawby",
keywords = "4H–SiC Schottky rectifier",
keywords = "Numerical modelling",
keywords = "p–n junction",
keywords = "Silicon carbide",
abstract = "Over the past decade there was a renewed surge of activity concerning the research and development of the wide bandgap group IV compound semiconductor silicon carbide (SiC). The current research interest in SiC for power electronic applications has re-emerged because of the advances made in fundamental SiC material and device processing technologies. This article outlines recent SiC power device developments with an emphasis on numerical device modelling results. This work also presents 1D and 2D numerical modelling results for unterminated circular high voltage 4H–SiC Schottky rectifiers. An overview of the current status of SiC high voltage junction termination techniques is also mentioned."
}
@article{Park1999535,
title = "A new generation of fast-switching thyristors",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "535 - 541",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00176-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001761",
author = "J.M Park and E.D Kim and W.G Min and S.C Kim and N.K Kim and P.G Dermenji and A.N Doumanevitch and A.V Konuhov and Yu.M Loktaev",
keywords = "Thyristors",
keywords = "Cathode emitter topology",
keywords = "Design",
keywords = "Silicon wafer",
abstract = "A new generation of fast-switching thyristors (FSThs) has been developed. It includes 100–1000 A/800–1200 V and 160–2000 A/2000–2500 V devices, turn-off times of them are equal to 6.3–12.5 μs and 32–63 μs, respectively. A new cathode emitter topology is proposed. It allows one to exclude the influence of the passive area of a p–n–p–n structure on the temperature dependence of maximal off-state voltage VDm, on the values of critical rate of rise of off-state voltage (dVD/dt)cr and on the turn-off time tq. It also promotes some reduction of turn-on losses. Prototype samples of 1600–2000 A, 2500 V FSTh, having such cathode emitter topology, were fabricated. Their testing results confirm a new approach for the design of FSTh cathode emitter topology."
}
@article{Iannuzzo1999543,
title = "A lumped-charge model for gate turn-off thyristors suitable for circuit simulation",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "543 - 550",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00177-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001773",
author = "F Iannuzzo and G Busatto",
keywords = "Lumped-charge model",
keywords = "Gate turn-fff thyristor",
keywords = "PSPICE",
abstract = "An innovative formulation of the lumped charge approach is used to extract a circuit model of high voltage gate turn-off thyristor (GTO) suitable to accurately predict their static and dynamic characteristics. The model includes the effects of depletion capacitance, non-quasi-static phenomena, the avalanche breakdown of the cathode junction and the effects of the anode shorts. The accuracy of the model can be increased thanks to its modularity and expandability. The equations of the model are given in such a form, which can be easily incorporated into PSPICE simulators as a sub-circuit net-list. The model was tested with success on devices rated at 4500 V and 2500 A."
}
@article{Zitouni1999551,
title = "A new lateral power MOSFET for smart power ICs: the “LUDMOS concept”",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "551 - 561",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00178-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001785",
author = "M Zitouni and F Morancho and H Tranduc and P Rossel and J Buxo and I Pagès and S Merchant",
keywords = "Lateral power MOSFET",
keywords = "Smart power IC",
keywords = "LUDMOS concept",
keywords = "Specific on-resistance",
keywords = "Breakdown voltage",
abstract = "In this paper, a new concept of lateral DMOSFET for medium voltage (<100 V) smart power integrated circuits is proposed. These structures present a trench in the drift region filled with oxide or with oxide and polysilicon. These structures called LUDMOSFET feature a reduced specific on-resistance and enhanced breakdown voltage. For example, for a breakdown voltage of 50 V, the specific on-resistance is 1.2 mΩ cm2 in the conventional LDMOSFET, 0.8 mΩ cm2 in the LUDMOS without polysilicon (i.e. 30 percent reduction) and 0.6 mΩ cm2 in the LUDMOS with polysilicon (i.e. 50 percent reduction). They are technologically compatible with advanced CMOS processes using trench isolation."
}
@article{Lefebvre1999563,
title = "Turn-off losses estimation for charge injection controlled non-punch through IGBTs",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "563 - 569",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00179-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001797",
author = "S Lefebvre and F Miserey",
keywords = "CIC NPT IGBT",
keywords = "Turn-off losses",
keywords = "Modelling",
keywords = "Simulation",
abstract = "The turn-off losses are estimated in the case of CIC NPT IGBTs operating on inductive load for snubberless turn-off operations. Only technological or electrical informations are needed, that are available from data sheets. In order to estimate the losses, IGBT's behaviour in the conduction state and in the voltage reapplication phase is described with the help of a one-dimensional analytical model. The stored charge removal is modelled in an elementary way to calculate the turn-off losses as a function of load current, of supply voltage and of case temperature. The calculated values of turn-off losses are compared with experimental results and also with results obtained in a bi-dimensional numerical simulation."
}
@article{Byeon1999571,
title = "The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "571 - 575",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00180-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001803",
author = "D.S Byeon and J.H Chun and B.H Lee and D.Y Kim and M.K Han and Y.I Choi",
keywords = "Shorted-anode",
keywords = "Lateral insulated gate biipolar transistor",
keywords = "Negative differential resistance",
abstract = "The separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, is investigated by performing 2-dimensional numerical simulation. In order to suppress the negative differential resistance regime, the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The SSA-LIGBT shows the remarkably decreased forward voltage drop when compared with the conventional SA-LIGBT and shows the one-order faster turn-off time than that of the LIGBT."
}
@article{Oh1999577,
title = "A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "577 - 581",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00181-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001815",
author = "J.K Oh and D.Y Kim and B.H Lee and D.S Byeon and M.K Han and Y.I Choi",
keywords = "Snapback",
keywords = "Shorted anode",
keywords = "Lateral insulated gate bipolar transistor",
abstract = "A new dual-gate shorted-anode SOI (silicon-on-insulator) LIGBT (lateral insulated gate bipolar transistor), which suppresses the snapback effectively with gates signal of the same polarity, is proposed and verified by numerical simulation. The suppression of the snapback in I–V characteristics is obtained by initiating the hole injection by employing the dual gate and FOC (floating ohmic contact) in the new device. The proposed device eliminates the snapback completely and has a low forward voltage drop compared with conventional SA-LIGBT (shorted anode lateral insulated gate bipolar transistor). Snapback of SA-LIGBT occurs at anode voltage 11 V, but in case of the proposed device, the snapback phenomenon is completely eliminated. Also, by employing the FOC, the drive signals of two gates are of an identical polarity. Therefore the proposed device requires no additional power supply, which is a necessity for driving conventional dual-gate SA-LIGBT."
}
@article{Vellvehı́1999583,
title = "Experimental and simulation results on the switching behaviour of lateral insulated gate bipolar transistor structures",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "583 - 589",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00182-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001827",
author = "M. Vellvehı́ and X. Jordà and P. Godignon and D. Flores and S. Hidalgo and J. Rebollo",
keywords = "Lateral insulated gate bipolar transistor",
keywords = "Switching behaviour",
keywords = "Transistors",
abstract = "This article reports experimental results on the switching behaviour of lateral IGBT structures. In addition to a conventional LIGBT structure (C-LIGBT), the experimental electrical characteristics of a novel modified structure (M-LIGBT) are also reported. Transient simulations with the aid of MEDICI together with its Circuit Analysis Module were carried out in order to provide more insight into the device physics. The performance at high operating temperatures is also investigated showing that the M-LIGBT shows a superior electrical behaviour. In addition, the inclusion of a shorted-anode structure on the switching process is also discussed."
}
@article{Flores1999591,
title = "Double gate MOS-thyristor devices with and without forward bias safe operating area capability: the insulated base MOS-controlled thyristor and the dual MOS-gated thyristor",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "591 - 597",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00183-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001839",
author = "D Flores and P Godignon and X Jordà and M Vellvehi and J Fernández and J Millán",
keywords = "MOS-thyristor",
keywords = "Forward bias safe operating area",
keywords = "Dual MOS-gated thyristor",
abstract = "MOS-thyristor devices with high voltage and current capabilities may replace conventional thyristors and IGBTs in high power applications. However, the maximum controllable current density (Jmcc), the current saturation capability and the total transient losses have to be improved. This article is addressed to the comparison of the electrical charateristics of MOS-thyristor structures including a Floating Ohmic Contact to provide high packing density and current saturation capability. The operation mode of both structures is analyzed with the aid of numerical simulations and experimental results, obtained from 1200 V devices, are provided to compare their electrical characteristics."
}
@article{Breil1999599,
title = "A new self-firing MOS-thyristor device: optimization of the turn-off performance and experimental results",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "599 - 610",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00184-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001840",
author = "M. Breil and J.-L. Sanchez and P. Austin and J.-P. Laur",
keywords = "High voltage integrated switch",
keywords = "Functional integration",
keywords = "MOS-thyristor associations",
keywords = "High voltage MOS-thyristor technological process",
keywords = "Zero voltage switching applications",
abstract = "In this paper, a new integrated self-firing and controlled turn-off MOS-thyristor structure is investigated. An analytical model describing the turn-off operation and parasitic latch-up was developed, allowing to highlight and optimize the physical and geometrical parameters acting upon main electrical characteristics. The analytical model is validated by two-dimensional (2D) simulations using PISCES. The technological fabrication process is optimized by 2D simulations using SUPREM IV. Electrical characterization results of fabricated test structures are presented."
}
@article{tagkey1999611,
title = "Patent report",
journal = "Microelectronics Journal",
volume = "30",
number = "6",
pages = "611 - 623",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(99)00029-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269299000294",
key = "tagkey1999611"
}
@article{M1999313,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "313 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00124-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001244",
author = "M and Henini (Guest Editor)"
}
@article{Leadbeater1999315,
title = "Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ-doped backgates",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "315 - 318",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00130-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800130X",
author = "M.L. Leadbeater and T.M. Burke and E.H. Linfield and N.K. Patel and D.A. Ritchie and M. Pepper",
keywords = "MBE growth",
keywords = "2DEG",
keywords = "GaAs",
abstract = "Hydrogen radical decontamination of ex situ patterned GaAs wafers was successfully used to grow a two-dimensional electron gas (2DEG) only 160 Å from the regrowth interface. Interface roughness scattering limits the mobility of this 2DEG to 330 000 cm2/Vs. An initial growth incorporating a delta-doping layer is etched to expose a {411} facet intersecting this back gate and then a 2DEG is regrown over the patterned wafer. We can modulate the potential in the 2DEG on a length-scale given by the width of the doped layer projected onto the facet (<600 Å). We have fabricated a one-dimensional (1D) constriction using this technique which exhibits quantized ballistic conductance."
}
@article{Henini1999319,
title = "Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "319 - 322",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00129-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001293",
author = "M Henini and A Polimeni and A Patanè and L Eaves and P.C Main and G Hill",
keywords = "Heterostructures",
keywords = "Microscopy",
keywords = "Quantum dots",
keywords = "Photoluminescence spectra",
abstract = "The optical and microscopic properties of highly strained In0.5Ga0.5As/GaAs heterostructures grown on (100), (311)A and (311)B-oriented substrates have been investigated by means of photoluminescence and atomic force microscopy, respectively. Samples grown on (100) show a clear transition in their photoluminescence spectra at a critical value of L due to the self-assembling of quantum dots. On the other hand, the same structures grown on (311) show a quite smooth evolution of the luminescence properties with L. The microscopic measurements indicate that these differences are associated with the morphology of dots formed on (311) substrates. Finally, in order to assess the device potential of (311)B (InGa)As dots, we have studied the properties of edge-emitting lasers by extending the well-known technology for (100) to the (311)B devices."
}
@article{Shtrikman1999323,
title = "(N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "323 - 328",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00127-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800127X",
author = "H. Shtrikman and Y. Hanien and A. Soibel and U. Meirav",
keywords = "Electron gas structures",
keywords = "Hole gas structures",
keywords = "(N11)A GcAs",
abstract = "We have successfully used (311)A and (511)A GaAs for the realization of high quality two-dimensional hole gas (2DHG) and electrons gas (2DEG) structures, respectively. This study was performed mostly on a back-gated, inverted interface, GaAs/AlGaAs structure, in which a 2DHG or 2DEG is embedded. This particular structure enabled the variation of the 2D carrier concentration over two orders of magnitude in a single device, as well as measurement of extremely low carrier densities in the mid 109 cm−2 range. This remarkably low carrier concentration achieved both in a 2DHG and in a 2DEG opens new frontiers for the study of mesoscopic phenomena governed by Coulomb interactions between carriers and, in particular, the possible existence of a Wigner crystal."
}
@article{Mariette1999329,
title = "Formation of II–VI nanostructures on vicinal surfaces",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "329 - 334",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00128-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001281",
author = "H Mariette and M Charleux and J.M Hartmann and F Kany and D Martrou and L Marsal and N Magnéa and J.L Rouvière",
keywords = "II–VI",
keywords = "Tilted superlattices",
keywords = "Atomic layer epitaxy",
keywords = "Vicinal surfaces",
abstract = "We report on the peculiar aspects of the growth of CdTe by atomic layer epitaxy compared to the one developed for other compound semiconductors. It is self-organized from two points of view, the amount of material deposited by ALE cycle, namely 0.5 ML/cycle for substrate temperatures around 260°C and the geometry of the deposited CdTe which tends to form preferentially square islands with 〈100〉 edges. Using these results, we demonstrate the possibility of growing tilted superlattices made out of CdTe and MnTe. However, the lateral ordering created by this structure is strongly limited by two effects, the Cd/Mn atomic exchange and the step array disorder."
}
@article{Vaitkus1999335,
title = "Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "335 - 340",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00131-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001311",
author = "J. Vaitkus and R. Baubinas and E. Gaubas and V. Kazlauskiene and J. Miskinis and A. Mazeikis and J. Sinius and E. Zasinas and A. Zindulis",
keywords = "II–VI and IV–VI compound semiconductors",
keywords = "Density-functional theory",
keywords = "Cluster formation",
keywords = "Terrace-step structure on Si",
abstract = "The thin layer of the II–VI and IV–VI compound growths on crystalline substrates by laser deposition was analyzed. The influence of substrate properties on crystallite formation was determined. The initial stages of the growth of CdSe on ZnSe as well as ZnSe and PbS crystallite growth and layer formation on a Si substrate were investigated by ESCA or AFM and by the influence of clusters on the recombination of non-equilibrium carriers in substrates. The atom behavior on a terrace-step surface was analyzed and a few cases were simulated within the framework of the density-functional theory. The terrace step on Si (111) relaxation and preferred sites of Se adsorption were calculated from potential energy surfaces seen by adatoms."
}
@article{Schuler1999341,
title = "Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "341 - 345",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00132-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001323",
author = "H. Schuler and K. Eberl",
keywords = "Quantum dots",
keywords = "Stacked layers",
keywords = "In-situ etching",
abstract = "We present investigations of the structural and optical properties of in-situ etched, self assembled InAs islands using AsBr3 within a molecular beam epitaxy system. This procedure allows reshaping and downsizing of quantum dots with atomic layer precision. The critical thickness of a second InAs layer on top of a thin GaAs layer covering a first InAs dot layer was investigated by RHEED using the 2D–3D transition due to the Stranski–Krastanov growth mode. In-situ etching of the GaAs spacer layer results in an array of small dips on the surface due to enhanced etching at locally strained areas. The dips influence the nucleation of the second dot layer."
}
@article{Borgi1999347,
title = "Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "347 - 351",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00133-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001335",
author = "K. Borgi and F. Hassen and H. Maaref and J. Dazord and Y. Monteil and J. Davenas",
keywords = "Atomic force microsocpy",
keywords = "Rutherford back scattering",
keywords = "Nanostructures",
keywords = "Heteroepitaxial growth",
abstract = "The initial stages of the three-dimensional metal organic vapor phase epitaxy growth of InP/GaP (100) and (111)A,B were studied by atomic force microscopy (AFM) and Rutherford back scattering (RBS). We have shown that the heteroepitaxial growth takes place under Stranski–Krastanov mode (layer by layer and dislocation free island growth). By combining RBS and AFM results, we show that the wetting layer is about 0.51 and 0.4 nm for (100) and (111)A,B orientated substrates, respectively. The critical thickness is found to depend on the substrate orientation. However, we show by the AFM technique that the shape, the height and the size of uncapped InP/GaP self-organized nanostructures depend on the amount of InP deposited and on the substrate orientation. In particular, the structure grown on (111)A,B substrate presents higher islands than the structure grown on (100). Therefore, the formation of nanostructures on substrates different from (100) is an interesting possibility to be investigated."
}
@article{Widmann1999353,
title = "Giant piezoelectric effect in GaN self-assembled quantum dots",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "353 - 356",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00134-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001347",
author = "F Widmann and J Simon and N.T Pelekanos and B Daudin and G Feuillet and J.L Rouvière and G Fishman",
keywords = "Giant piezoelectric effect",
keywords = "Quantum dots",
keywords = "Emission spectra",
keywords = "GaN",
abstract = "We observe in strained GaN self-assembled quantum dots grown on an AlN layer, a dramatic modification of the optical emission spectra as the dot size varies. In “large” quantum dots with an average height of 4.1 nm, the photoluminescence (PL) peak is centered at 2.95 eV, nearly 0.5 eV below the bulk GaN bandgap. We attribute this enormous redshift to a giant 5.5 MV cm−1 piezoelectric field present in our dots. Temperature-dependent PL studies reveal the strongly zero-dimensional character of this QD system and are consistent with an intrinsic PL mechanism."
}
@article{Bremond1999357,
title = "Optical study of germanium nanostructures grown on a Si(118) vicinal substrate",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "357 - 362",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00135-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001359",
author = "G Bremond and M Serpentini and A Souifi and G Guillot and B Jacquier and M Abdallah and I Berbezier and B Joyce",
keywords = "Photoluminescence",
keywords = "Germanium nanostructures",
keywords = "Molecular beam epitaxy",
keywords = "High index surface",
keywords = "Type-II recombination",
keywords = "Luminescence",
abstract = "Photoluminescence (PL) measurements were carried out on Si/Ge(n)/Si0.7Ge0.3/Si structures (n is varying from 1 to 7 ML) deposed by gas source molecular beam epitaxy (GS-MBE) on Si(100) surfaces and high index Si(118) vicinal surfaces. Ge nanostructures were confined on the top of the undulation of the Si0.3Ge0.7 wetting layer, according to the Stranski–Krastanov growth mode. PL measurements reveal a correlation between the substrate orientation and the island morphology: square dots for (001) and wires for (118) surface orientation. The results suggest that the SiGe wetting layer is required to ensure a good dot size uniformity. The dependence of the luminescence on the excitation power and the PL decay time indicate that the luminescence transitions likely occur in a type-II band line up. Finally, the dot-related PL persists up to room temperature which is very promising for optoelectronic device applications."
}
@article{Sánchez1999363,
title = "Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "363 - 366",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00136-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001360",
author = "J.J. Sánchez and J.M.G. Tijero and J. Hernando and J.L. Sánchez-Rojas and I. Izpura",
keywords = "Molecular beam epitaxy",
keywords = "Single strained quantum wells",
keywords = "Relaxation",
keywords = "Optoelectronics",
abstract = "Molecular Beam Epitaxy (MBE) growth of a series of Single Strained Quantum Wells (SSQWs) of InGaAs/GaAs with indium content ranging from 10% to 35% and 100 Å well thickness was performed on (001) and (111)B GaAs substrates under optimized growth conditions for simultaneous growth. The Critical Layer Thickness (CLT) of the heterostructures grown on both substrates was comparatively studied by low temperature Photoluminescence (PL). Relaxation is readily observed in the structures grown on (001) GaAs for 24% In-content. This value is in close agreement with both a calculation of the excess strain associated with the two Matthews and Blakeslee strain relieving dislocation mechanisms and the onset of three-dimensional growth. By contrast, heterostructures grown on (111)B GaAs remain pseudomorphic for In-contents above 25%. A maximum PL peak wavelength of 1.1 microns at room temperature has been reached under the growth conditions used. This would correspond to an In-content around 31%. The study shows that (111)B is a preferable choice of substrate orientation for the growth of InGaAs/GaAs heterostructures for optoelectronic applications at wavelengths beyond 1 μm."
}
@article{Tsai1999367,
title = "Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "367 - 371",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00137-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001372",
author = "F.Y. Tsai and C.P. Lee and Jinxi Shen and Yasuo Oka and H.H. Cheng",
abstract = "The exciton dynamics in In0.15Ga0.85As/GaAs quantum wells grown on (111)B and (100) GaAs substrates are studied by the time-resolved photoluminescence (PL). We have found that the piezoelectric fields in (111)B samples affect the transient behavior of PL spectra. Compared with the reference (100) samples, we have confirmed that the piezoelectric effect induces slower exciton relaxation in (111)B strained quantum wells."
}
@article{Sánchez1999373,
title = "Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "373 - 378",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00138-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001384",
author = "J.J. Sánchez and M. Gutiérrez and D. González and G. Aragón and J.M.G. Tijero and J.L. Sánchez-Rojas and I. Izpura and R. Garcı́a",
keywords = "Single strained quantum wells",
keywords = "Planar view transmission electron microscopy",
keywords = "Photoluminescence",
abstract = "A series of InGaAs/GaAs Single Strained Quantum Wells (SSQWs) with indium content ranging from 25% to 35% and 100 Å well thickness were grown on two different (111)B GaAs off-axis substrates under optimized growth conditions for simultaneous growth. Optoelectronic properties were studied in terms of low temperature photoluminescence (PL). Results indicate a PL emission dependence with the substrate used, this dependence being stronger for highly strained systems. In order to determine the source of this dependence, samples were studied by Planar View Transmission Electron Microscopy (PVTEM). Relaxation mechanisms seem to act in a different way regarding the misoriented substrate used. Although previous theoretical results have already reported this dependence, this is the first direct evidence of this phenomenon for SSQWs. The results of these two different techniques will be compared and discussed."
}
@article{Hiyamizu1999379,
title = "Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "379 - 385",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00139-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001396",
author = "S. Hiyamizu and S. Shimomura and T. Kitada",
keywords = "Super-flat interfaces",
keywords = "GaAs/AlGaAs heterostructures",
keywords = "InGaAs/InAlAs heterostructures",
keywords = "Molecular beam epitaxy",
abstract = "Extremely flat interfaces, i.e. effectively atomically flat interfaces over a wafer-size area were realized in GaAs/AlGaAs quantum wells (QWs) grown on (411)A GaAs substrates by molecular beam epitaxy (MBE). These flat interfaces are called as “(411)A super-flat interfaces”. Besides in GaAs/AlGaAs QWs, the (411)A super-flat interfaces were formed in pseudomorphic InGaAs/AlGaAs QWs on GaAs substrates and in pseudomorphic and lattice-matched InGaAs/InAlAs QWs on InP substrates. GaAs/AlGaAs resonant tunneling diodes and InGaAs/InAlAs HEMT structures with the (411)A super-flat interfaces were confirmed to exhibit improved characteristics, indicating high potential of applications of the (411)A super-flat interfaces. High density, high uniformity and good optical quality were achieved in (775)B GaAs/(GaAs)m(AlAs)n quantum wires (QWRs) self-organized in a GaAs/(GaAs)m(AlAs)n QW grown on (775)B GaAs substrates by MBE. The QWRs were successfully applied to QWR lasers, which oscillated at room temperature for the first time as QWR lasers with a self-organized QWR structure in its active region. These results suggest that MBE growth on high index crystal plane such as (411)A or (775)B is very promising for developing novel semiconductor materials for future electron devices."
}
@article{Vaccaro1999387,
title = "AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "387 - 391",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00140-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001402",
author = "P.O Vaccaro and K Koizumi and K Fujita and T Ohachi",
keywords = "Molecular beam epitaxy",
keywords = "Distributed Bragg reflectors",
keywords = "Vertical-cavity surface emitting lasers",
abstract = "The lateral oxidation of AlAs layers grown on GaAs (100), (110) and (n11)A-oriented substrates (n=1, 2, 3, 4) was studied. The temperature dependence of the oxidation rate was measured between 390°C and 450°C. The oxidation rate is highly anisotropic and the anisotropy is related to the symmetry of the crystal structure. The oxidation process has an activation energy that depends on substrate orientation. The oxidation front line becomes irregular for temperatures higher than 450°C and the surface of the samples was degraded when the temperature exceeded 540°C. The time dependence of the oxidation rate was found to be similar to the Si oxidation process."
}
@article{Geelhaar1999393,
title = "A scanning tunneling microscopy study of the GaAs(112) surfaces",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "393 - 396",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00141-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001414",
author = "L. Geelhaar and J. Márquez and K. Jacobi and A. Kley and P. Ruggerone and M. Scheffler",
keywords = "Gallium arsenide",
keywords = "High-index surfaces",
keywords = "Molecular beam epitaxy",
keywords = "Scanning tunneling microscopy",
keywords = "Total-energy calculations",
keywords = "Structure",
abstract = "The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in situ by scanning tunneling microscopy (STM). Both surfaces are unstable. On the (112)A surface five facets with the orientations (111), {110} and {124} appear, while on the (1̄1̄2̄)B surface four facets with the orientations (1̄1̄1̄)B, {1̄1̄0̄} and (1̄1̄3̄)B were observed. In both cases, the facets form depressions covering the entire surface. In addition, total-energy calculations employing density-functional theory were carried out for these surfaces. For the (112)A surface a roof-like structure of {111} and {113} planes has the lowest calculated energy. According to the calculations, the (1̄1̄2̄)B surface forms under As-rich conditions a roof-like structure of {1̄1̄1̄}B and {1̄1̄3̄}B planes, and it decomposes under Ga-rich conditions into {1̄1̄0} planes. The experimental and theoretical findings for the (1̄1̄2̄)B surface are in good agreement. The occurrence of {124}-facets on the (112)A surface was not taken into consideration in the calculations and needs to be investigated further."
}
@article{Fujikura1999397,
title = "Selective molecular beam epitaxy growth of quantum wire–dot coupled structures with novel high index facets for InGaAs single electron transistor arrays",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "397 - 401",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00142-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001426",
author = "Hajime Fujikura and Tsutomu Muranaka and Hideki Hasegawa",
keywords = "InGaAs",
keywords = "Selective molecular beam epitaxy",
keywords = "Single electron transistor",
keywords = "Quantum wire–dot coupled structure",
abstract = "For the InGaAs wire–dot–wire coupled structure arrays formed by selective molecular beam epitaxy (MBE) growth method on a specially designed patterned InP substrates, applicability to high density InGaAs single electron transistor (SET) arrays were investigated from the viewpoint of reproducibility of the selective MBE growth, size controllability and integration level. Appearance of the crater-like structure becomes a problem for reproducible formation of the InGaAs quantum wire–dot coupled structure. However, such a crater structure can be removed by appropriately adjusting growth condition and pattern sizes. The InGaAs wire size, the InGaAs dot size and the lateral width of the potential barrier were found to be controlled by the growth condition and the pattern geometry and can be reduced down to decananometer range. Highly integrated SET circuits with the device density larger than 109 cm−2 appear to be realizable using the present selective MBE method."
}
@article{Koo1999403,
title = "Light emission and the quantum efficiency of lateral p–n junctions on patterned GaAs (100) substrates",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "403 - 407",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00143-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001438",
author = "B.J Koo and J.J Harris and N.R Gardner and P Dominguez",
keywords = "Light emission",
keywords = "Quantum efficiency",
keywords = "Lateral p–n junctions",
abstract = "We have studied the light emission from lateral p–n junctions grown by MBE on patterned GaAs (100) substrates. The junctions were located at the upper and lower boundaries between (100) flat/(311)A facet combinations. Electrical measurements showed that, under low bias, tunnelling dominated the current flow, but the level was sample- and junction-dependent. We attribute these differences to growth-dependant Ga migration rates at the flat–facet interfaces, with consequent formation of mid-gap states which assist in the tunnelling process. Above ∼0.5 V forward bias, the diffusive current component became dominant, although partly masked by non-linear series resistance effects. In this higher voltage regime, significant light emission was observed, particularly from the lower p–n junctions. The external quantum efficiencies varied from ∼0.1% for the upper junctions to as high as 7.3% for the best lower junction. This difference was correlated with the degree of tunnelling, suggesting that the mid-gap states involved in this process can also act as non-radiative recombination centres for the diffusively injected carriers."
}
@article{Ortiz1999409,
title = "Multiperiod piezoelectric-barrier all-optical light modulator",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "409 - 412",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)90144-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298901446",
author = "V Ortiz and G Mula and N.T Pelekanos",
keywords = "Piezoelectric-barrier",
keywords = "All-optical modulator",
keywords = "Photoluminescence",
abstract = "We present preliminary new results on multiperiod piezoelectric-barrier all-optical modulators. It is shown first on single period structures that an incident beam of a few W/cm2 is able to create a space-charge field of ∼20 kV/cm in the structure, inducing a 10 meV shift in the photoluminescence (PL) spectrum. We discuss then a multiperiod structure showing similar optically-driven PL shifts. Even though the multiperiod structure was not optimized for transmission modulation experiments, we observed a 12% transmission variation at 760 nm induced by a 10 W/cm2 optical beam."
}
@article{Romero1999413,
title = "Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence",
journal = "Microelectronics Journal",
volume = "30",
number = "4–5",
pages = "413 - 417",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00145-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001451",
author = "M.J. Romero and D. Araújo and J.L. Sánchez-Rojas and E. Calleja and E. Muñoz and R. Garcı́a",
keywords = "Cathodoluminescence",
keywords = "Piezoelectric fileds",
keywords = "Photodiodes",
abstract = "As a novel design parameter, the built-in piezoelectric field induced in InGaAs/GaAs (111)B heterostructures has potential applications in novel optoelectronic devices. Negative average field (NAF) and positive average field (PAF) p–i–n photodiodes are here studied by electron beam induced current (EBIC) and cathodoluminescence (CL). As a result of the negative potential envelope, carrier capture and recombination processes in the multiple quantum well (MQW) are shown to govern the carrier dynamic only in NAFs. Indeed, the electron beam induced current carriers become trapped at the potential minima located at the ends of the MQW giving rise to a long-range electric dipole. Using spatially resolved monochromatic cathodoluminescence measurements, a direct evidence of such long-range screening effect in (111) NAF diodes is given."
}
@article{EceOlcay|Anday1999211,
title = "Realization of voltage/current-mode filters using four-terminal floating nullors",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "211 - 216",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00106-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001062",
author = "Ece Olcay and Fuat Anday",
keywords = "Voltage-mode filters",
keywords = "Current-mode filters",
keywords = "Transfer functions",
keywords = "Signal flow graphs",
abstract = "A signal-flow graph synthesis procedure for generating voltage/current-mode filters using four-terminal floating nullors (FTFNs) is presented. Novel networks which realize second-order voltage/current-mode filters are given. For presented circuits the element values are expressed in terms of second-order transfer function coefficients and they have grounded capacitors."
}
@article{Ming1999217,
title = "A comparative assessment of gold plating thickness required for stationary electrical contacts",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "217 - 222",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00109-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001098",
author = "Sun Ming and Michael Pecht and Marjorie Ann E.",
keywords = "Electrical contacts",
keywords = "Corrosion kinetics",
keywords = "Gold plating",
keywords = "Diffusion",
keywords = "Contact resistance",
abstract = "There is considerable interest in the corrosion control of thin gold plated contact surfaces of consumer electronics products. This originates in the desire to minimize the use of costly gold and other precious metals, like palladium, and their alloys, without sacrificing reliability. When the application is in adverse environments, gold plated contact finishes can enhance the reliability of the electrical contacts. However, the failure mechanisms depend strongly on the operating environment and contact plating and are time dependent processes. Numerous investigations on unloaded gold plated surfaces (unmated and tested at non-operating environmental condition) have been performed to simulate the contact failures induced by corrosion. However, no models have been proposed that account for the effects of loading electrically and mechanically on the corrosion process and selection of gold plating thickness. This article describes the study of loaded electrical contacts with the objective of setting up a comparative model between unloaded and loaded electrical contacts, which will improve the understanding of the influence of contact force and applied voltage on the selection of gold layer thickness and finish material. Contact force will improve the performance of gold finishes in stationary electrical contacts and decrease significantly, the gold plating thickness requirements compared to unloaded situation because of its effect on suppression of surface film growth. Voltage will accelerate the growth of surface film and result in the decrease of contact lifetime."
}
@article{GianCarlo|Ferri1999223,
title = "CMOS and bipolar novel low-power adaptive biasing topologies",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "223 - 227",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00110-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001104",
author = "Gian-Carlo and Giuseppe Ferri and Marco Re",
keywords = "Low-power biasing topologies",
keywords = "CMOS",
keywords = "Bipolar",
keywords = "Differential voltage",
keywords = "Spice simulations",
abstract = "A novel adaptive biasing principle to reduce the stand-by power dissipation without affecting the transient performance of low-power topologies is presented. The circuit gives an output current which is dependent on the applied input differential voltage. If small signal sensitivity is required, the differential sensitivity can be improved by introducing a very small biasing current, whose task is the compensation of the threshold voltages of the transistors. The current value has to be set according to the transient performance constraints. The proposed topology, proved to be applicable to both bipolar and CMOS technologies, can be utilized in low-voltage low-power operational amplifiers, in particular for the biasing of the input stage. In this paper, a study of the large signal circuit behaviour, for both the bipolar and the CMOS technologies, is developed and basic design rules, concerning the setting of minimum and maximum output currents, are given. The agreement between theoretical calculations and Spice simulations makes these results very useful for the circuit design."
}
@article{M|Wild1999229,
title = "Drive performance of an asymmetric MOSFET structure: the peak device",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "229 - 233",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00111-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001116",
author = "M. and A. Wild and S. Selberherr",
abstract = "The drive performance of a new MOSFET structure, the peak device, resulting from recent doping profile optimizations of a 0.25 μm n-MOSFET for 1.5 V supply voltage, is investigated. Explanations for the improved performance are given using two-dimensional device simulation. With an analytical transistor model fitted to the two-dimensional device characteristics, the relevant physical effects are identified. It is shown that the superior drive performance of the peak device can mainly be addressed to the reduction of the effective gate length and the improved bulk effect."
}
@article{Salama1999235,
title = "CMOS operational transresistance amplifier for analog signal processing",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "235 - 245",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00112-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001128",
author = "Khaled N Salama and Ahmed M Soliman",
abstract = "A new CMOS realization of the Operational Transresistance Amplifier (OTRA) is introduced. The properties of the OTRA are shown to be suitable for VLSI applications employing MOS transistors operating in the ohmic region. Applications of the OTRA in realizing voltage amplifiers, multipliers, integrators, continuous time filters and a quadrature oscillator are presented. Voltage mode filters that benefit from the current processing capabilities at the input terminals of the OTRA are presented. A detailed analysis taking the effect of the finite transresistance gain into consideration is provided. Both passive compensation and self-compensation of the proposed circuits are presented. The effectiveness of the proposed circuits is demonstrated through PSpice simulations based on the AMI 1.2 μm N-well level 3 parameters."
}
@article{Thilo|Nikolaus1999247,
title = "Design of an analogue transceiver for speech communication systems",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "247 - 253",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00113-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800113X",
author = "Thilo and Nikolaus",
keywords = "Analogue transceiver",
keywords = "Speech communication",
keywords = "Air traffic control",
abstract = "The objective of the present design was to create a unified analogue frontend for air traffic control systems. The audio tranceiver is capable of directly driving headset earphones together with high capacitive loads. A distinct feature of the device is a built-in loop-back function allowing for a self-test of the signal path. The design was carried out for an Austrian SME and fabricated on a 1.2 μm CMOS process by AMS. Apart from being an example for a successful co-operation between university and industry, the project is interesting also because it refutes the common prejudice that an ASIC pays off only for high-volume production."
}
@article{Serdar|Toker1999255,
title = "New current-mode universal filters using only four (CCII+)s",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "255 - 258",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00114-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001141",
author = "Serdar and Ali Toker and Oğuzhan Çiçekoğlu",
keywords = "Current-mode",
keywords = "Universal filters",
keywords = "CCIIs",
abstract = "Two new single-input three-output current-mode (CM) universal filters using only four CCIIs of plus-type were presented. It was shown that both filters have simpler implementations compared to the current conveyor-based universal current filters already known in the literature. Experimental results verifying theoretical analyses are also included."
}
@article{Chaturvedi1999259,
title = "Response of oxygen plasma-treated thick film tin oxide sensor array for LPG, CCl4, CO and C3H7OH",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "259 - 264",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00115-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001153",
author = "A Chaturvedi and V.N Mishra and R Dwivedi and S.K",
keywords = "Oxygen plasma",
keywords = "Thick film",
keywords = "Tin oxide",
abstract = "In the present paper, studies have been made to analyze the effect of oxygen plasma and dopants on the room temperature sensitivity of tin oxide, thick film gas sensors for various gases. To achieve this, an array of sensors was fabricated by thick film technology using tin oxide paste doped with Pd, Pt, CuO, ZnO, Cd and SnO2. Subsequently, the fabricated array was annealed in oxygen plasma for 15 min. The response of the array has been studied for different concentrations of CO, LPG, CCl4 and C3H7OH. The response–recovery time analysis of the fabricated array has also been carried out. These studies reveal that the sensitivity of oxygen plasma-treated array is much higher at room temperature compared with the untreated array. Moreover, addition of different dopants enhance the sensitivity and selectivity of the sensor to various gases/odours. The Pt-doped sensor has been found to be more sensitive to CO and LPG, whereas the Pd-doped sensor shows a good response towards CCl4 and C3H7OH, and the Cd-doped sensor was found to show a fairly good response to all four gases."
}
@article{E|Spassov1999265,
title = "Hydrogen annealing effect on the properties of thermal Ta2O5 on Si",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "265 - 274",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00157-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001578",
author = "E and D Spassov",
keywords = "Post-metallization annealing",
keywords = "Leakage current",
keywords = "MOS",
keywords = "Ta2O5 thin layer",
abstract = "The effect of post-metallization annealing in H2 at 723 K on the properties of MOS capacitors with thermally grown thin (13–26 nm) Ta2O5 layers was investigated. It was established that the annealing effect strongly depends on the properties of the as-grown oxides and in particular on the oxidation temperature. The oxidation at higher temperatures (823 and 873 K) is beneficial for improving the electrical, breakdown and insulating properties of the films after annealing. A dielectric constant of 32 was reached for these layers and the magnitude of leakage current guarantees their application in 64 Mbit DRAM. The hydrogen annealing, however, additionally generates slow states in the oxide with a density of about 5×1011 cm−2."
}
@article{Liu1999275,
title = "Carrier freezeout in strained p-type Si1−xGex and its influence on the low temperature characteristics of SiGe heterojunction bipolar transistors",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "275 - 280",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00160-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001608",
author = "Rong Liu and Wensheng Qian and Tongli Wei",
keywords = "Carrier freezeout",
keywords = "Low temperature",
keywords = "Si1−xGex",
keywords = "HBT",
abstract = "A physically based model for carrier freezeout in strained p-type Si1−xGex is presented using the band parameters of coherently strained Si1−xGex alloy on 〈001〉 Si substrate. It is found that the carrier freezeout is mitigated at low temperatures with the increasing of Ge fraction. The proposed model proved to give consistently accurate values for base sheet resistance and other device characteristics of SiGe heterojunction bipolar transistors (HBTs) at low temperatures. The results may provide a rational basis for the design of low temperature operation SiGe HBTs."
}
@article{GF|Bellutti1999281,
title = "An all-implanted p-channel Si JFET fully compatible with CMOS technology",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "281 - 285",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00166-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001669",
author = "G.-F and P Bellutti and M Boscardin and L Ferrario and G Soncini and N Zorzi",
keywords = "JFET–CMOS",
keywords = "VLSI technologies",
abstract = "In this article, we show that a p-channel silicon Junction Field Effect Transistors (JFET) can be obtained within a conventional CMOS n-well technology with no additional process steps but a simple layout modification of the p-channel-stop mask; in fact, in the suggested technology, the p-channel of the JFET is obtained by using the same CMOS p-stop implantation step. Results from the electrical characterization of a specially designed test-chip confirmed the validity of the device concept and its full compatibility with CMOS devices; in particular, JFETs exhibit high transconductance and output resistance as well as low gate current and input capacitance. The proposed technological approach has therefore proved to be suitable for the realization of p-JFET–CMOS low-noise circuits."
}
@article{Abuelma’atti1999287,
title = "A novel three inputs and one output universal current-mode filter using plus-type CCIIs",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "287 - 292",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00169-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001694",
author = "Muhammad Taher Abuelma’atti and Noman Ali Tasadduq",
keywords = "Current-mode filter",
keywords = "Current-conveyor",
abstract = "A novel current-mode current-conveyor based universal filter with three inputs and one output is presented. The circuit uses six plus-type second-generation current-conveyors (CCII+), six grounded resistors and two grounded capacitors. The circuit enjoys the following advantageous features: independent grounded-resistance control of the filter parameters, realisation of all the basic filter functions, low passive sensitivities and high output impedance. Experimental results are included."
}
@article{tagkey1999293,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "293 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00121-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001219",
key = "tagkey1999293"
}
@article{tagkey1999293,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "293 - 294",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00122-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001220",
key = "tagkey1999293"
}
@article{tagkey1999294,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "294 - 295",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00123-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001232",
key = "tagkey1999294"
}
@article{tagkey1999295,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "295 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00161-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800161X",
key = "tagkey1999295"
}
@article{tagkey1999295,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "295 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00162-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001621",
key = "tagkey1999295"
}
@article{tagkey1999297,
title = "Patent report",
journal = "Microelectronics Journal",
volume = "30",
number = "3",
pages = "297 - 312",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00118-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001189",
key = "tagkey1999297"
}
@article{Cao1999101,
title = "A novel technique for p-well NMOS power ICs",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "101 - 103",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00026-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000268",
author = "Guangjun Cao and Sanqing Liu and Jianhua Ying and Yanzhong Xu and Zuxin Qin",
abstract = "A novel technique is proposed for the design and fabrication of p-well NMOS power integrated circuits (PICs). Theoretical analysis and experimental results show that p-well NMOS ICs can be compatibly integrated with VDMOS cells in one chip, and butt joint lateral diffusion-obtained p-n junctions have the same breakdown properties as commonly diffused ones. As an example, considerations on the layout design of the PIC structure are given."
}
@article{Oǧuzhan1999105,
title = "New multifunction filter implemented with current conveyors",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "105 - 107",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00083-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000834",
author = "Oǧuzhan and Çiçekoǧlu",
keywords = "Current conveyors",
keywords = "Filters",
abstract = "A new multifunction filter implementation is presented which can simultaneously realise low-pass, high-pass and band-pass functions. The circuit employs only grounded passive components, exhibits high input impedance, and no element matching conditions are imposed. The filter permits orthogonal adjustment of quality factor Q and ω0. The passive sensitivities are shown to be low."
}
@article{Pavlovic1999109,
title = "Temperature distribution in the cells of low-voltage power VDMOS transistor",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "109 - 113",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00096-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000962",
author = "Z. Pavlovic and I. Manic and Z. Priji and N. Stojadinovic",
keywords = "Author please provide keywords",
abstract = "This paper covers a numerical analysis of the self-heating effect and the effect of mutual heating of nearest neighbouring cells in low-voltage power VDMOS transistors. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS device operating in both linear and saturation region was calculated on the basis of proposed theoretical model."
}
@article{Çam1999115,
title = "A new four terminal floating nullor based single-input three-output current-mode multifunction filter",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "115 - 118",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00097-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000974",
author = "Uğur Çam and Oğuzhan Çiçekoğlu and Hakan Kuntman",
keywords = "FTFN",
keywords = "Current-mode circuits",
keywords = "Multifunction filters",
abstract = "In this study, a new circuit configuration to realise a current-mode multifunction filter is presented. The circuit uses four four terminal floating nullors (FTFNs) and six passive components, four of them are grounded and can simultaneously realise low-pass, band-pass and high-pass filter functions without changing the circuit topology and elements. It does not require any parameter matching condition and has the possibility of independent adjustment of ω0 without disturbing ω0/Q. Sensitivity analysis of the filter shows that it has low passive sensitivities and ω0, Q and ω0/Q of the filter are insensitive to current tracking errors, furthermore ω0 of the filter is insensitive to voltage tracking errors of the FTFNs. All outputs of the multifunction filter exhibit high output impedances so that the synthesised current-mode filters can be cascaded without additional buffers. The theoretical results are verified by PSPICE simulations."
}
@article{Arshak1999119,
title = "Development of high frequency coreless transformer using thick film polymer technology",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "119 - 125",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00098-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000986",
author = "K.I. Arshak and B. AlMukhtar",
keywords = "High frequency",
keywords = "Coreless transformer",
keywords = "Thick film",
keywords = "“LD” product",
abstract = "The necessity for size decrease in power electronics systems has pushed the operating frequency of these systems into the MHz range. The operation of these systems in the MHz range introduces a number of problems such as excessive coreloss, the skin effect and the proximity effect. In this work, a new high efficiency coreless transformer has been developed using polymer thick film technology, to overcome the coreloss at high frequency. The coils of the transformer are arranged coaxially in two configurations, (1) as a one-layer structure and (2) as two series connected layers in a sandwich structure. The operating principle of this transformer is based on the skin and mutual effect between the coils at high frequency. The copper electroplating process was implemented since an upper limit exists on the thickness of the conductor due to the skin effect under high frequency operation. The well-defined geometry of this thick-film planar transformer renders the parasitic interwinding capacitance and the leakage inductance reproducible. The experimental work performed shows that the polymer thick-film transformer exhibits a low interwinding parasitic capacitance, a high coupling factor of 98% at 9 MHz and shows a maximum efficiency of 98.2% at 10 MHz depending on the load condition."
}
@article{Kuntman1999127,
title = "A new study on spin-on-silica for multilevel interconnect applications",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "127 - 131",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00099-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000998",
author = "Ayten Kuntman and Rifat Yenidünya and Ahmet Kaşgöz and Hakan Kuntman",
abstract = "In this study, a new method for low temperature oxide deposition is discussed. Silicon dioxide was formed on silicon from silicic acid solution by using spin-on technology. Mechanical and planarizing properties of the silicon dioxide were investigated. Using this oxide a metal–silicon dioxide-wafer (MOS) structure was manufactured. Breakdown field strength and trap density of the MOS capacitance was measured. The method discussed in this paper shows a very low carbon contamination risk and does not suffer from crack formation. It is therefore suitable for a variety of applications in VLSI and ULSI fabrication, which require low process temperatures or where high temperatures have drawbacks."
}
@article{Bhan1999133,
title = "Anomalous effect in readout of large size charge coupled device multiplexers for hybrid focal plane arrays",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "133 - 148",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00100-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001001",
author = "R.K Bhan and V Dhar and S.K Lomash",
abstract = "The multiplexer functionality of two sets of two-dimensional Charge Coupled Device (CCD) multiplexers (MUXs) viz. 16×16 and 100×100, using identical design tools, on-chip amplifiers, technology and foundry for fabrication, was measured under identical clocking conditions. It was found that the frame readout of the 100×100 CCD MUX shows an anomalous effect, in the sense that video output signal value monotonically decreases as the pixel number increases (from first to last pixel). This was contrary to the expectation of constant output from all the pixels—as was observed for 16×16 CCD MUXs. The problem was analysed by performing a number of experiments (with horizontal and vertical shift registers, input structure, etc.) to isolate the number of reasons/blocks that are possibly responsible for the cause of this effect. The origin of the problem was traced to a polysilicon bus used for interconnecting Store Gates (SGs) of the input structure. The total resistance, and consequently voltage drop, across this bus was found to be negligible for smaller arrays (16×16), but not for larger ones (100×100). By proper tuning of spill time of input injecting pulse, this anomalous effect could be eliminated completely. A simple model for the anomalous effect was developed and the predicted trends found to agree with various experimental observations."
}
@article{Yazgı1999149,
title = "A new approach for parameter extraction of complex models and an application for SPICE MOSFET level-3 static model",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "149 - 155",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00101-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001013",
author = "Metin Yazgı and Hakan Kuntman",
abstract = "In this work, a new approach is presented for specifying the error term used in the parameter extraction algorithms. By using the new approach, it is possible to remove the differential operations in the algorithms used for the extraction of parameters in complex models. Also, we present an iteration procedure obtained by using the new approach for the extraction of SPICE level-3 MOST static model parameters KP, VTH, TETA, VMAX and RS (=RD). As well as the triode region parameters, GAMMA, NFS and KAPPA can be found in the overall procedure. Results of the procedure have been compared with the experimental results. It is obvious from this comparison that the new approach is effective for the determination of level-3 model parameters, as for the determination of parameters of proper models."
}
@article{Acar1999157,
title = "A new versatile building block: current differencing buffered amplifier suitable for analog signal-processing filters",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "157 - 160",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00102-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001025",
author = "Cevdet Acar and Serdar Ozoguz",
keywords = "Current differencing buffered amplifier",
keywords = "Analog signal processing",
keywords = "Current feedback amplification",
abstract = "A new multi-terminal active component with two inputs and two outputs, namely current differencing buffered amplifier (CDBA) is proposed. It is derived from current feedback amplifier (CFA) which is commercially available as AD844. It has been shown by realising high-order voltage transfer function that it is beneficial to use this element as a building block to realize analog signal-processing filters."
}
@article{Jiju1999161,
title = "Improving the wire bonding process quality using statistically designed experiments",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "161 - 168",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00104-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001049",
author = "Jiju and Antony",
abstract = "Statistically Designed Experiments (SDE) are used for identifying the critical variables associated with a process and thereby determining the optimal levels for these variables for enhanced performance. These methods are well known among the statisticians but few industrial engineers have any exposure to these powerful problem solving methods because of limited statistical skills and expertise. This paper presents the potential benefits of SDE for product and process quality improvement in a manufacturing environment. The paper also describes the application of SDE to a wire bonding process in order to identify the key variables which affect the pull strength. Both analytical and graphical methods are used for better and rapid understanding of the results to the engineering community. The results of this study will encourage the engineering community to apply methods such as a chronic problem solving tool in their own organisation."
}
@article{Mahmoud1999169,
title = "New CMOS fully differential difference transconductors and application to fully differential filters suitable for VLSI",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "169 - 192",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00105-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001050",
author = "Soliman A Mahmoud and Ahmed M Soliman",
keywords = "CMOS transconductors",
keywords = "Filters",
abstract = "New CMOS voltage controlled fully differential difference transconductors (FDDT) are presented. The basic structure of the proposed transconductors is based on the current linearization of basic MOS cells in different configurations consisting from two or four NMOS matched transistors operating in the saturation region. The proposed transconductors are used to design fully differential second order lowpass, bandpass and highpass filters suitable for VLSI. PSpice simulation results for the proposed fully differential difference transconductors and their filter applications indicating the linearity range and verifying the analytical results are also given."
}
@article{Margala1999193,
title = "Low-voltage power-efficient BiDPL adder for VLSI applications",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "193 - 197",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00107-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001074",
author = "Martin Margala and Nelson G Durdle",
keywords = "Bipolar Double Pass-Transistor Logic",
keywords = "BiDPL adder",
keywords = "power efficiency",
keywords = "VLSI applications",
abstract = "This paper presents a new low-voltage power-efficient adder design, based on a Bipolar Double Pass-Transistor Logic (BiDPL), suitable for VLSI applications. The new adder delivers significantly higher performance for the same amount of power needed to execute an adder operation. The new BiDPL adder is more power-efficient at very low supply voltages (1.1–2 V) than a conventional CMOS adder design and the best low-voltage low-power adder reported in literature. The proposed BiDPL adder outperforms in power-efficiency both designs by as much as 61% and 535% respectively. Under optimal conditions (Vdd=1.6 V), the BiDPL adder is 40% more efficient than a standard CMOS adder and up to 300% more efficient than the low-power adder proposed by Wu and Ng (Electronics Letters, Vol. 33, No. 8, 1997). At 1.2 V power supply, the proposed new BiDPL adder is 46% more power-efficient than a standard CMOS adder. The low-power low-voltage adder proposed by Wu and Ng is not operational below 1.5 V. All experimental circuits were designed and fabricated with 0.8 μm BiCMOS technology."
}
@article{Vildeuil1999199,
title = "Extraction of the BSIM3 1/f noise parameters in CMOS transistors",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "199 - 205",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00108-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001086",
author = "J.C. Vildeuil and M. Valenza and D. Rigaud",
keywords = "CMOS transistors",
keywords = "Flicker noise",
keywords = "Berkley short-channel IGFET model",
abstract = "Flicker noise is investigated in a set of transistors issued from a 0.8 μm CMOS technology in order to extract parameters for simulation using BSIM3 (Berkeley Short-channel IGFET Model). The noise model used in BSIM3 is discussed, an appropriate extraction procedure is proposed. Intrinsic channel noise variations versus device biases agree with Hooge’s theory (carrier mobility fluctuations) for p-MOSTs and with Mc Whorter’s theory (carrier number fluctuations) for n-MOSTs. It is shown that for the studied technology two noise parameters (NOIA and NOIB) can model the intrinsic channel noise. For p-MOSTs, NOIA and NOIB are constants and for n-MOSTs NOIA is also a constant while NOIB is inversely proportional to the effective gate voltage. Good agreement between simulation and experimental results is obtained."
}
@article{tagkey1999207,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "207 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00095-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000950",
key = "tagkey1999207"
}
@article{tagkey1999207,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "207 - 208",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00116-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001165",
key = "tagkey1999207"
}
@article{tagkey1999208,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "208 - 209",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00117-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001177",
key = "tagkey1999208"
}
@article{tagkey1999209,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "209 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00119-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001190",
key = "tagkey1999209"
}
@article{tagkey1999209,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "2",
pages = "209 - 210",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00120-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001207",
key = "tagkey1999209"
}
@article{Hsing19991,
title = "Numerical analysis of relationship between blocking and driving capability in 6H-SiC UMOSFET",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "1 - 14",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00050-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000505",
author = "Edward H.S Hsing and Jeffery L Gray",
abstract = "Devices made of 6H-SiC have gained much attention owing to their superior characteristics. In this paper, we use an advanced device simulator, ADEPT, with the robust design of an experimental approach to analyze the trade-off between the blocking and driving capability in the designed 6H-SiC UMOSFET. New models based on the experimental data were created for the impact ionization and carrier mobility. Three device parameters, channel length, channel region doping and drift region doping, were selected to check their effects on the device's behavior. Based on our analysis, the channel length of the UMOSFET is the most significant factor among the chosen parameters in deciding the capability of the designed device. Special concern has to be directed to the device design to compromise the unavoidable performance trade-off."
}
@article{Oğuzhan199915,
title = "Multifunction filters using three current conveyors",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "15 - 18",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00066-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000664",
author = "Oğuzhan and Çiçekoğlu",
keywords = "Current conveyors",
keywords = "Multifunction filters",
abstract = "A new current conveyor based filter topology with ten different realisation possibilities, using only positive type second generation current conveyors and only grounded passive components, is presented. For all possibilities, no element matching conditions are imposed. The filters permit orthogonal adjustment of quality factor Q and resonant angular frequency ω0. All circuits exhibit high input impedance thus enabling easy cascadability. The passive sensitivities are shown to be low. The functionality of the circuits is tested on a filter design example by experiment."
}
@article{Bouhdada199919,
title = "Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "19 - 22",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00073-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000731",
author = "A. Bouhdada and A. Nouacry and S. Bakkali and A. Touhami and R. Marrakh",
abstract = "The increase of the MOS integration scale entails the presence of the strong electrical fields in the MOS channel transistor, which cause the injection of hot carriers in the gate oxide and create defects at the Si/SiO2 interface and in the oxide layer. These defects induce leakage currents and are responsible for degradation of circuit performances and transistor ageing. The aim of this work is to investigate the influence of defects localised in the oxide near the drain of an NMOS transistor in saturation mode on the variation of substrate and drain currents as a function of gate voltage."
}
@article{Yoon199923,
title = "Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "23 - 28",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00077-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000779",
author = "S.F. Yoon and B.P. Gay and H.Q. Zheng and K.S. Ang and H. Wang and G.I. Ng",
keywords = "High electron mobility transistor",
keywords = "Indium gallium phosphide",
abstract = "In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm2/Vs and 3.3×1012 cm−2, respectively. Despite the low two-dimensional electron gas (2DEG) mobility, a peak transconductance (Gm) of 267 mS/mm and peak drain current density (Ids) of 360 mA/mm were measured for a p-HEMT device with 1.25 μm gate length. A high gate–drain breakdown voltage (BVgd) of 33 V was measured, a value which is more than doubled compared to that of a conventional Al0.30Ga0.70As/In0.20Ga0.80As/GaAs device. The drain–source breakdown voltage (BVds) was 12.5 V. The results showed that the In0.48Ga0.52P/In0.20Ga0.80As/GaAs material system grown by SSMBE using the valved phosphorus cracker cell for the In0.48Ga0.52P layers is clearly viable for p-HEMT device applications."
}
@article{Mahmound199929,
title = "CMOS balanced output transconductor and applications for analog VLSI",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "29 - 39",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00078-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000780",
author = "Soliman A. Mahmound and Ahmed M. Soliman",
keywords = "CMOS",
keywords = "Transconductors",
abstract = "A new CMOS programmable balanced output transconductor (BOTA) is introduced. The BOTA is a useful block for continuous-time analog signal processing. A new CMOS realization based on MOS transistors operating in the saturation region is given. Application of the BOTA in realizing bandpass–lowpass–allpass–notch biquad mixed mode filter using four BOTAs and two grounded capacitors and in realizing current mode MOS-C oscillators using three or four BOTAs and two grounded capacitors are given. PSpice simulation results for the BOTA circuit and for its applications are also included."
}
@article{Ali199941,
title = "A novel measurement method for extraction of the base resistance in the BJT",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "41 - 44",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00082-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000822",
author = "Ali and Toker",
keywords = "Measurement methods",
keywords = "Base resistance",
keywords = "BJT",
abstract = "A novel high frequency measurement method for determining the base resistance of the bipolar transistor is presented. The new method is based on the short-circuit input impedance measurements. The measurement is performed at lower frequencies compared to the circle-diagram method and therefore can be applied very easily. Furthermore, it is also possible to determine some other BJT parameters from these measurements. The new method is given in detail and correction factors to parasitics are derived. It was shown that the measurement results are in good agreement with results of conventional methods."
}
@article{Duzenli199945,
title = "On the design of low-frequency filters using CMOS OTAs operating in the subthreshold region",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "45 - 54",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00084-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000846",
author = "Gursel Duzenli and Yavuz Kilic and Hakan Kuntman and Atilla Ataman",
keywords = "CMOS OTA",
keywords = "Low power",
keywords = "Subthreshold region",
keywords = "Filter",
abstract = "Design considerations on a circuit technique based on subthreshold operation of MOS transistors is described for the realization of low-frequency OTA-C active filters with small capacitance values of the order of 25–400 pF. The circuit technique described is applied to the α (8–12 Hz), β (13–40 Hz), θ (4–8 Hz) and δ (1–4 Hz) band filters for EEG signals. Because of small capacitance values the filter circuit is suitable for realization on a single VLSI chip using the CMOS technology, and enables the user to implement the circuit on implantable biotelemetric applications."
}
@article{Singh199955,
title = "Minimum difference method: an approach for the discrimination of individual gases/odours using an integrated sensor array",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "55 - 58",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00085-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000858",
author = "V.K. Singh and R. Dwivedi and S.K. Srivastava",
keywords = "Gas sensor",
keywords = "Discrimination techniques",
keywords = "Minimum difference method",
abstract = "In this paper, the minimum difference (MD) method for the discrimination of individual gases/odours, using an integrated sensor array, has been presented. The decision of an unknown gas/odour is made by finding the minimum difference values between the training and sniffing mode parameters. The method has been illustrated successfully with the data set obtained in our laboratory for the four types of alcoholic beverage. It is envisaged that the MD method, in association with the gas sensor array, may find an application in food and/or beverage industries."
}
@article{Toker199959,
title = "New active gyrator circuit suitable for frequency-dependent negative resistor implementation",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "59 - 62",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00086-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800086X",
author = "Ali Toker and Oguzhan Cicekoglu and Hakan Kuntman",
keywords = "Active gyrator circuit",
keywords = "FDNR implementation",
keywords = "Gyrator realization",
abstract = "This paper presents two active gyrator implementations employing only two positive-type current conveyors (CCII+) and an additional buffer, which are also realisable with two current feedback op-amps (CFOA). The circuits are constructed using four basic building blocks. One circuit is found to be identical to a previously presented circuit, the other is new. An FDNR (frequency-dependent negative resistor) employing only grounded capacitors is realised with the proposed configuration. An application example and simulation results are included to verify the theory."
}
@article{Sedef199963,
title = "Simulation of resistively terminated LC ladder filters using a new basic cell involving current conveyors",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "63 - 68",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00087-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000871",
author = "H. Sedef and C. Acar",
keywords = "Resistively terminated",
keywords = "Active filter design",
keywords = "LC ladder circuits",
keywords = "Current conveyors",
abstract = "A simple, but general, synthesis method is given for the simulation of resistively terminated LC ladder circuits. The method is based on a new basic cell (BC) introduced in this work. The proposed method converts resistively terminated LC ladder circuits into inductorless active circuits involving only second-generation current conveyors (CCII±), grounded resistors and grounded capacitors. Hence it is suitable for fully integrated circuit design."
}
@article{Acar199969,
title = "Limitations on input signal level in voltage-mode active-RC filters using current conveyors",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "69 - 76",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00088-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000883",
author = "C Acar and H Kuntman",
keywords = "Current conveyors",
keywords = "SPICE simulations",
keywords = "Active-RC filters",
abstract = "The current conveyors (CCIIs) operate linearly under certain conditions. Violation of these conditions causes nonlinear distortion in active filters involving CCIIs. On the other hand, voltage-mode active-RC filters are considerably important in filter design. Considering these facts, a simple formula is derived for maximum input signal amplitude preventing nonlinear distortion in voltage-mode active-RC filters involving current conveyors. Derived formula are verified by SPICE simulations on chosen active filter examples. Using the formula presented in this study and the impedance scaling property, the input signal level can be optimized and the behaviour of the active filters can be improved."
}
@article{Pérez199977,
title = "Neural network quantifier for solving the mixture problem and its implementation by systolic arrays",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "77 - 82",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00103-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298001037",
author = "R.M. Pérez and P. Bachiller and P. Martı́nez and P.L. Aguilar",
keywords = "Neural networks",
keywords = "Orthogonal transformation",
keywords = "Systolic arrays",
keywords = "Signal processing",
keywords = "Pattern recognition",
abstract = "In this paper we present the application of a method, based on the orthogonal transformation, to develop an optimal neural network for solving the Mixture Problem and a linear systolic to design it is provided. We use a back-propagation neural model for determining and quantifying the components in a composite spectrum obtained from a given mixture of elements. The spectra of the possible components are used as the training patterns. The orthogonal transformation used in the present work are the singular value decomposition (SVD) and the QR with column pivoting factorization (QRcp). An interesting property of the proposed method is related to the possibility of reducing the input and hidden nodes at least to the number class. This reduction allows us to obtain an optimum VLSI implementation by a linear systolic."
}
@article{tagkey199983,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "83 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00086-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000864",
key = "tagkey199983"
}
@article{tagkey199983,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "83 - 84",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00087-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000876",
key = "tagkey199983"
}
@article{tagkey199984,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "84 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00009-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000093",
key = "tagkey199984"
}
@article{tagkey199984,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "84 - 85",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00069-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800069X",
key = "tagkey199984"
}
@article{tagkey199985,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "85 - 86",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00081-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000810",
key = "tagkey199985"
}
@article{tagkey199986,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "86 - ",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00089-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000895",
key = "tagkey199986"
}
@article{tagkey199986,
title = "Book review",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "86 - 87",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00090-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000901",
key = "tagkey199986"
}
@article{tagkey199989,
title = "Patent report",
journal = "Microelectronics Journal",
volume = "30",
number = "1",
pages = "89 - 99",
year = "1999",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00091-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000913",
key = "tagkey199989"
}
@article{tagkey1998iii,
title = "List of contents",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "iii - x",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00094-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000949",
key = "tagkey1998iii"
}
@article{tagkey1998xi,
title = "Author index",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "xi - xiii",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00093-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000937",
key = "tagkey1998xi"
}
@article{MT1998951,
title = "An improved analysis for the nonlinear distortion of analog MOSFET circuits with signals simultaneously applied to body, gate and drain terminals",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "951 - 960",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00013-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700013X",
author = "M.T. and Abuelma'atti",
keywords = "Nonlinear distortion",
keywords = "MOSFET resistors",
abstract = "This paper discusses the nonlinear distortion of MOSFET resistors with signals simultaneously applied to the drain, body and gate terminals. The special case of a single-frequency sinusoidal signal is discussed in detail and the necessary biasing and signal amplitude combinations for minimizing the second and third-harmonic distortions are investigated."
}
@article{Djezzar1998961,
title = "An advanced PNP bipolar transistor design for a low-power and very-high-performance quarter-micron CBiCMOS process",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "961 - 965",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00088-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000888",
author = "B. Djezzar and M.T. Belaroussi",
abstract = "This paper describes an advanced PNP bipolar transistor which has been designed by using the mixed two-dimensional device/circuit simulation (CODECS) [1] for a low-power and very-high-performance 0.25 μm complementary BiCMOS (CBiCMOS) device. The optimized PNP structure has a 30-nm-wide emitter, a 39-nm-wide intrinsic base region, a maximum cut-off frequency of 14 GHz and a current gain of 16 (without poly-Si emitter effect). A high performance and limits in terms of delay for pull-down of 0.25 μm CBiCMOS were obtained and compared to those offered by BiCMOS and complementary metal-oxide semiconductor circuits at different power supplies and charge capacitance. An improvement of 1.5 × at 1 pF, 1.6 × at 0.6 pF and 2 × at 0.2 pF over BiCMOS has been achieved."
}
@article{Meniconi1998967,
title = "Static and dynamic performance degradation of CMOS buffers due to ionizing radiation",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "967 - 972",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00099-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000992",
author = "M. Meniconi and D.M. Barry and S. Wright",
abstract = "It has been known for some time that ionizing radiation has profound effects on integrated circuits. These need to be considered when such devices may be subjected to radiation environments, such as in the space and nuclear industries. As even the space industry is making increased use of commercial off-the-shelf components for cost considerations, it is again becoming more important to characterize the degradation profiles of ICs which have not necessarily been radiation hardened. To that effect, the performance characteristics as functions of total dose have been analyzed for Motorola MC14050B CMOS Hex buffers in order to identify some relevant parameters. This paper presents the static (dc) and dynamic (ac) characteristics of these devices which have been subjected to increasing total doses under different bias conditions."
}
@article{Oǧuzhan1998973,
title = "Precise simulation of immittance functions using the CFOA",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "973 - 975",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00016-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000160",
author = "Oǧuzhan and Çiçekoǧlu",
keywords = "Current feedback op-amps",
keywords = "Immittance simulators",
abstract = "A simple new circuit realising negative immittances using a single commercially available CFOA is presented. The simulated immittance values can orthogonally be adjusted and all passive sensitivities are no more than unity. For the circuit the phase angle of the realised immittances are independent of the three CFOA non-idealities and the circuit allows easy compensation for these active errors."
}
@article{Smith1998977,
title = "Design automation of Reed-Solomon codecs using VHDL",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "977 - 982",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00049-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000494",
author = "S. Smith and D. Taylor and M. Benaissa",
keywords = "VHDL",
keywords = "Reed-Solomon codecs",
keywords = "Parameters",
abstract = "This paper describes the development of a VHDL core for generating Reed-Solomon codecs. The parameters of the required Reed-Solomon code are entered into the VHDL core as constants (generics) and the resulting description can then be synthesized to any appropriate technology. Codecs generated using the core have been shown to be hardware efficient, with design times a fraction of those required for handcrafted designs and the core can therefore be used by any non-specialist to generate Reed-Solomon codecs for any application."
}
@article{OǧuzhanÇiçekoǧlu1998983,
title = "On the design of CCII+ based relaxation oscillator employing single grounded passive element for linear period control",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "983 - 989",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00054-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000548",
author = "Mehmet Oǧuzhan Çiçekoǧlu and Hakan Kuntman",
abstract = "There have been an increasing number of publications on current conveyor oscillator structures in recent years. For most topologies presented, independent frequency and oscillation condition control by a single element is possible, they use minimum number of components employing grounded passive elements, but none of them allow linear period control which is essential for numerous applications. The oscillator presented here based on the nonlinear behavior of the CCII+ allows single element linear period control over three decades of the period, is suitable for integration, and is free from high frequency limitations of operational amplifier counterparts."
}
@article{Kuntman1998991,
title = "On the realization of DO-OTA-C oscillators",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "991 - 997",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00063-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000639",
author = "Hakan Kuntman and Aydin Özpinar",
keywords = "DO-OTA-C oscillators",
keywords = "Oscillator topologies",
keywords = "Filter topologies",
abstract = "The basic aim of this paper is to give design considerations of current-mode high frequency DO-OTA-C oscillator topologies achieving noninteractive control of b and ωo with a minimum number of components. Starting from DO-OTA-C (grounded capacitor) filter topologies reported in the literature and employing a minimum number of components, novel DO-OTA-C oscillator topologies are generated by converting filters into oscillators. Furthermore, the influence of the OTA nonidealities on oscillator performance is investigated. The performance of the proposed topologies are demonstrated with SPICE simulation program. The oscillator configurations provide frequency control by changing the OTA transconductances with biasing currents without affecting oscillation condition and are very suitable for VLSI design since they are composed only of DO-OTAs and grounded capacitors."
}
@article{Bonelli1998999,
title = "A novel supply and process independent ECL-to-CMOS level converter for VLSI systems",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "999 - 1004",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00064-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000640",
author = "Andrea Bonelli and Carlo Fiocchi and Umberto Gatti",
abstract = "This paper presents novel circuit schemes for the ECL-to-CMOS level conversion in BiCMOS digital ICs. The proposed topologies show electrical characteristics (delay time, duty cycle, output currents) independent from the supply voltage and process variations. Thus, they are suitable to be used with both 3.3 V and 5 V supplies and over a huge temperature range. Moreover, their average current consumption is lower than 320 μA while operating with a signal frequency higher than 120 MHz. The propagation delay time in the presence of the load of a minimum-sized inverter ranges from 1 ns to 1.2 ns for the two different proposed solutions at room temperature, and varies less than 2% over the temperature range 0° to 70°. A prototype of the proposed cell has been integrated in a conventional 0.8 μm BiCMOS technology and the measurements confirm the. expected performance."
}
@article{Chen19981005,
title = "Theory of a novel voltage-sustaining layer for power devices",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1005 - 1011",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00065-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000652",
author = "X.B. Chen and P.A. Mawby and K. Board and C.A.T. Salama",
keywords = "Breakdown voltage",
keywords = "Power devices",
keywords = "Specific on-resistance",
keywords = "Voltage sustaining layers",
abstract = "The theory of a novel voltage-sustaining layer for power devices, called a Composite Buffer layer (CB-layer for short) is proposed. The CB-layer can be implemented in several ways, one particular implementation is used here, which consists of alternating n- and p-type regions, that are parallel to the direction of the applied electric field. In the off-state, the fields induced by the depletion charges of both region types compensate each other to allowing the doping in both n-regions and p-regions to be very high without causing a reduction of the breakdown voltage. In the onstate the heavy doping ensures the voltage drop is very low and that the saturation current density high. A simple relationship between the specific on-resistance and Ron and the sustaining voltage VB can be shown to be Ron=2.53 × 10−7bVB1.23 ωcm2, where the breadth b (in μm) of each region is much smaller than the thickness W. The design method of the CB-layer is discussed in some detail. The simulation results are shown to be in perfect agreement with the theory. The structure has application to a wide variety of different power devices. An RMOST structure has been used to demonstrate the benefits of the technique in the paper, for which excellent performance is demonstrated."
}
@article{Caggiano19981013,
title = "Computer program that generates an electrical circuit model of the chip scale BGA",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1013 - 1024",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00074-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000743",
author = "M.F. Caggiano and R.M. Brush and J.T. Kleban and P.J. Chuaypradit",
keywords = "Chip scale",
keywords = "BGA",
keywords = "Modeling",
keywords = "Electrical",
abstract = "The CSBGA package-modeling program can rapidly generate a model from a specific description of a package, or from partial information when only an approximation is needed. This innovative new software is targeted for the engineer who, at his desktop PC or workstation, can rapidly generate an accurate electrical model of a chip scale BGA. Program operation consists of entering the available data, and retrieving output that can be used in a simulation, or simply analyzed for an idea as to the range of values the parasitic effects take. The whole process will just take minutes. The program was designed to be fast and portable, contrasting other methods of modeling in which such attributes were sacrificed for greater accuracy. Such accuracy may not be desired in most applications where there is a greater emphasis on speed or where powerful workstations are not available. The models targeted for both data processing and RF systems will have a wide range of use across military and commercial electronics applications."
}
@article{Lee19981025,
title = "A comparative study of glitch-free true single-phase clocked D flip-flop circuits at low supply voltage",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1025 - 1031",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00075-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000755",
author = "Hanho Lee and Gerald E. Sobelman",
keywords = "TSPC D flip-flop",
keywords = "Low-voltage",
keywords = "Low-power",
keywords = "Power consumption",
keywords = "Glitch-free",
keywords = "HSPICE",
abstract = "This paper investigates the characteristics and performances of several true single-phase clocked (TSPC) D flip-flops (D-FFs) at low supply voltage. We propose a new glitch-free D-FF for low-voltage operation. Since the dynamic power consumption in CMOS is proportional to Vdd2, decreasing the supply voltage yields a large reduction in power consumption. The main design objectives for these circuits are glitch-free operation and low power consumption at low supply voltage. The proposed D-FF circuit has been compared with previously known circuits and has been shown to provide superior performance. All circuits in this paper have been simulated using HSPICE with a 0.4-μm CMOS technology at a 2-V supply voltage. An analysis of a serial pipeline multiplier design establishes the superiority of the proposed circuit in that application."
}
@article{Fiocchi19981033,
title = "A 75 μW rail-to-rail class AB CMOS operational amplifier",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1033 - 1037",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00076-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000767",
author = "Carlo Fiocchi and Umberto Gatti",
keywords = "Operational amplifier",
keywords = "Low-voltage rail-to-rail circuit",
abstract = "A new class AB CMOS operational amplifier featuring rail-to-rail output swing is presented. The proposed circuit operates with an output voltage supply of 1 V only, while the overall power consumption is lower than 75 μW. The output stage shows a quiescent current of 15 μA, while it guarantees a peak current of 220 μA. The slew rate is 1.5 V μs−1 (C1 = 150 pF) and the THD is −63 dB, when a 0.98 Vpp−10.4 kHz sinewave is applied, as measured on an experimental prototype realised with a standard 0.8 μm CMOS process. The circuit presented is suitable for use in portable hand-set systems or in medical aids."
}
@article{J19981039,
title = "Essentials of optoelectronics with applications: Alan Rogers, Chapman & Hall, London, 1997, 468 pp., £35, ISBN: 0-412-40890-2",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1039 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00010-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800010X",
author = "J. and Karamarković"
}
@article{M19981039,
title = "Analog circuit design: Rudy J. van de Plassche, Johan H. Huijsing, Willy M.C. Sansen, eds, Kluwer Academic Publishers, Boston, 1997, hardcover, 418 pp, $125, ISBN 0-7923-9968-4",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1039 - 1040",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00057-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000573",
author = "M. and Stojcev"
}
@article{M19981040,
title = "Design with PIC microcontrollers: John B. Peatman, Prentice-Hall, Upper Saddle River, NJ, 1998, hardcover, 260 pp., $51.95, ISBN 0-13-759259-0",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1040 - 1041",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00058-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000585",
author = "M. and Stojčev"
}
@article{D19981041,
title = "RF microelectronics: Behzad Razavi: Prentice-Hall PTR, Upper Saddle River, NJ, 1998, hardcover, 335 pp., $92.99. ISBN 0-13-887571-5",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1041 - 1042",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00059-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000597",
author = "D. and Krstić"
}
@article{M19981042,
title = "The 80x86 IBM PC and compatible computer (vols I & II): assembly language, design and Interfacing, 2nd ed.: Muhhamed Ali Mazidi, Janice Gillispie Mazidi, Prentice-Hall, Upper Saddle River, NJ, 1998, hardcover, 984 pp., $51.95, ISBN 0-13-758509-8",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1042 - 1043",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00061-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000615",
author = "M. and Stojčev"
}
@article{M19981043,
title = "Integrated smart sensors design and calibration: Gert van der Horn and Johan L. Huijsing, Kluwer Academic Publishers, Boston, 1998, hardcover, 202 pp, $105.00, ISBN 0-7923-8004-5",
journal = "Microelectronics Journal",
volume = "29",
number = "12",
pages = "1043 - 1044",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00067-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000676",
author = "M. and Stojčev"
}
@article{Wachutka1998771,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "771 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00090-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000906",
author = "Gerhard K. Wachutka and Ronald H.W. Hoppe"
}
@article{Gerlach1998773,
title = "Strategies of modelling and simulation of microsystems with electromechanical energy conversion",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "773 - 783",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00091-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000918",
author = "Gerald Gerlach and Andreas Klein",
abstract = "It is evident from the recent development of microsystem technology that usual simulation methods and tools can hardly meet the requirements of a modern design process. Although in most cases single subsystems can be described and simulated, their interactions cannot yet be included in the simulation process. This can be attributed to: (i) the coupling of different physical domains due to energy conversion; (ii) the complexity and heterogeneity of microsystems; and (iii) the use of extremely different design methods and tools for separate electric and non-electric subcomponents of microsystems. This paper describes and discusses several strategies of modelling and simulation of such complex and heterogeneous microsystems, which allow a coupled simulation of such systems with a reasonable accuracy of the computational results. The strategies are based exclusively on commercial simulation software."
}
@article{Türkes1998785,
title = "Electro-thermal simulation of power electronic systems",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "785 - 790",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00092-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700092X",
author = "P. Türkes and J. Sigg",
abstract = "A methodology for the development of physics-based models of power semiconductor devices is presented. The separation of the device behaviour in its basic physical elements is the basis for the establishment of an electrical model. Semiconductor parameters are strongly dependent on temperature. A close reproduction of the device performance therefore requires the determination of an equivalent circuit of the silicon chip and its package. The electrical and the thermal model parts are combined, taking the interaction between both into account consistently. The electrical and thermal model parameters are extracted from measurements."
}
@article{Voigt1998791,
title = "Microfluidic system modeling using VHDL-AMS and circuit simulation",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "791 - 797",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00093-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000931",
author = "P. Voigt and G. Schrag and G. Wachutka",
abstract = "It is demonstrated that the operation of electrofluidic microsystems such as micropumps can be efficiently modeled by standard electrical circuit simulators, using the analog hardware description language (VHDL-AMS) to describe the models. As a representative example, compact models were developed for all constituent parts of an electromechanical micropump fabricated by silicon-based microstructure technology, including electrostatically actuated membrane drives, membrane valves and tubes together with the power supply and control circuitry. With the resulting macromodel of the micropump, the static characteristics as well as the dynamic behavior is correctly reproduced. Thus, with this approach it is possible to include fluidmechanical system components straightforwardly in conventional microelectronic design environments, allowing for easy full system analysis and optimization of even complex microsystems."
}
@article{Bär1998799,
title = "Three-dimensional simulation of layer deposition",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "799 - 804",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00094-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000943",
author = "E. Bär and J. Lorenz and H. Ryssel",
abstract = "A program for three-dimensional simulation of layer deposition has been developed. It is based on physical models for the description of the specific processes, and uses a triangular surface representation. The discretized surface is shifted according to the growth rates calculated from the model. Additional algorithms for deleting nearly degenerated triangles and for the adaptive refinement of the triangulation improve the stability and efficiency of the simulator. Simulations of different deposition processes, such as low-pressure chemical vapour deposition of silicon dioxide and tungsten silicide, and sputter deposition of aluminum and titanium nitride, are shown. The comparison between two- and three-dimensional simulations shows the necessity to use three-dimensional tools for prediction of the shape of deposited layers, particularly for geometries such as high-aspect ratio contact holes. Experimental results for the deposition of silicon dioxide show good agreement with simulations."
}
@article{Djahli1998805,
title = "A macro model in SMART SPICE to study MOSFET degradations with the CP technique",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "805 - 811",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00022-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000220",
author = "F. Djahli and L. Kaabi",
keywords = "MOSFET degradation",
keywords = "Charge pumping technique",
keywords = "Macro model",
abstract = "In this work, we have simulated the experimental charge pumping technique by the development and implementation of a macro model in the electrical simulator SMART SPICE on a personal computer. This macro model takes into account all of the geometrical and electrical parameters of the studied transistor and gives their mathematical expressions. It also gives the different curves of the charge pumping current, which can be obtained experimentally by this technique for different parameters, before or after different ageing stresses. The results obtained are compared with recent experimental results."
}
@article{Bouhdada1998813,
title = "New model of gate-induced drain current density in an NMOS transistor",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "813 - 816",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00029-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000293",
author = "A. Bouhdada and A. Touhami and S. Bakkali",
abstract = "The band-to-band tunnelling effect in the gate-to-drain overlap region of a MOS transistor is characterized by the existence of an electrical field E which is the source of the gate-induced drain leakage current Igidl. This current causes an inevitable limit to further MOSFET scaling. The aim of this paper is to model this current by taking into account the non-uniformity of the electrical field E in the gate-drain overlap region and to investigate the influence of the technological parameters on the Igidl current characteristic."
}
@article{delaRosa1998817,
title = "A CMOS 0.8 μm fully differential current mode buffer for HF SI circuits",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "817 - 820",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00098-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000980",
author = "J.M. de la Rosa and B. Pérez-Verdú and F. Medeiro and R. Domínguez-Castro and A. Rodríguez-Vázquez",
abstract = "We present a high-frequency fully-differential current-mode buffer to interface off-chip currents with no significant degradation of the frequency response, and to measure current-mode ICs using standard equipment. It has been fabricated in a 0.8 μm double-poly double-metal CMOS technology and features more than 37 MHz bandwidth. In order to show its functionality, this unit has been incorporated to the front end of a switched-current bandpass ΣΔ modulator featuring a 9 bit dynamic range at 10 MHz clock frequency for a 30 kHz signal bandwidth centred at 2.5 MHz."
}
@article{R1998821,
title = "Dynamic analysis of digital circuits with multi-valued simulation",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "821 - 826",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00100-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001006",
author = "R. and Ubar",
abstract = "This paper presents a new method for dynamic analysis of digital circuits with multi-valued simulation based on calculation of Boolean derivatives on structural binary decision diagrams (SBDDs) (or structural alternative graphs). A procedure for calculation of the maximum of Boolean derivatives on SBDDs as the basis for multi-valued simulation is described. Algorithms for five- and eight-valued simulation are discussed in detail. The method is applicable for component level representations of digital circuits, whereas components' arbitrary subcircuits (macros) instead of gates are considered. No dedicated model library for representing multi-valued behaviour of components is needed. Instead of dedicated multi-valued models, generic ones in the form of SBDDs are used. Experimental data to demonstrate the advantages of the new approach are provided."
}
@article{Tagzout1998827,
title = "Compact parallel multipliers using the sign-generate method in FPGA",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "827 - 831",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00103-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001031",
author = "Samir Tagzout and Leïla Sahli",
keywords = "DSP",
keywords = "Multiplication",
keywords = "FPGA",
abstract = "Multiply operations are fundamental to most DSP applications. In this paper, a novel method to compute parallel multiplication in field programmable gate array (FPGA), is presented. The basic idea consists in adapting the sign-generate algorithm to the constant coefficient and the variable by variable multipliers. Implementation examples are discussed to show how to increase parallel multipliers performances, especially in density."
}
@article{Srivastava1998833,
title = "Effect of oxygen and hydrogen plasma treatment on the room temperature sensitivity of SnO2 gas sensors",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "833 - 838",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00117-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001171",
author = "Roopali Srivastava and R. Dwivedi and S.K. Srivastava",
keywords = "Hydrogen",
keywords = "Oxygen",
keywords = "Plasma treatment",
keywords = "SnO2",
abstract = "The influence of oxygen plasma as well as hydrogen plasma on the gas sensing properties of palladium doped SnO2 has been studied. It is found that the sensors treated in gaseous plasma become sensitive at room temperature and the sensitivity increases with the duration of exposure in gaseous plasma. The sensitivity of sensors treated in oxygen plasma is found to be about 10 times more than that of untreated sensor, while in the case of hydrogen plasma it is about seven times when treated for 15 min. The response and recovery time has also been studied. It is found that both the response time and recovery time decrease with the increase in the duration of exposure time. The barrier height and effective barrier characteristics have also been evaluated through the low temperature and impedance spectroscopic measurements."
}
@article{Ju1998839,
title = "Glass-to-glass electrostatic bonding for FED tubeless packaging application",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "839 - 844",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00119-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001195",
author = "Byeong-Kwon Ju and Woo-Beom Choi and Yun-Hi Lee and Sung-Jae Jung and Nam-Yang Lee and Jeong-In Han and Kyoung-Ik Cho and Myung-Hwan Oh",
abstract = "Two ITO-coated glass wafers (Corning #7740, #0080) are successfully bonded by the typical Si-Pyrex electrostatic bonding mechanism. Both Si-#7740 and Ti-(Li-doped SiO2) interlayer systems can be employed for the electrostatic bonding of #7059-#7059 and #0080-#0080 glass wafer pairs. This glass-to-glass electrostatic bonding process can be applied to the clean and tubeless packaging of field emission display panels."
}
@article{Brianti1998845,
title = "High-speed autozeroed CMOS comparator for multistep A/D conversion",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "845 - 853",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00123-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001237",
author = "Francesco Brianti and Alessandro Manstretta and Guido Torelli",
keywords = "CMOS comparator",
keywords = "A/D conversion",
abstract = "A CMOS comparator suitable for multi-step flash analog-to-digital (A/D) converters is presented. It includes a moderate-gain preamplifier, a gain stage and a final set-reset-flip-flop. Fast operation and high resolution are achieved using regenerative loads in the gain stage together with reset and autozero techniques in both amplifying stages. To minimize residual offset, the regenerative structure is reset while still kept in its unstable configuration. The comparator was integrated in conventional single-poly 1.2 μm CMOS technology. Experimental evaluations showed a better than 1.5 mV resolution with less than 400 μV offset at a larger than 30 MHz comparison rate after the sampling/autozero phase. Power dissipation is as small as 0.8 mW (VDD = 5 V) in static conditions, and within 2.2 mW at maximum operating frequency."
}
@article{Ju1998855,
title = "Fabrication and field emission properties of poly-diamond films",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "855 - 859",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00018-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000184",
author = "Byeong-Kwon Ju and Yun-Hi Lee and Myung-Hwan Oh",
keywords = "Field emission",
keywords = "Diamond",
keywords = "Film",
abstract = "By using a substrate transferring technique, poly-diamond thick films having a smooth or rough surface could be fabricated as field emitter materials. The diamond film with a smooth surface, which was transferred from the interface between the (100) Si substrate and poly-diamond deposited by plasma-enhanced CVD, showed better field emission properties in terms of emission current density with improved vacuum level dependence as compared with original poly-diamond film from a rough surface."
}
@article{Mishra1998861,
title = "Sensitivity, response and recovery time of SnO2 based thick-film sensor array for H2, CO, CH4 and LPG",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "861 - 874",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00019-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000196",
author = "V.N. Mishra and R.P. Agarwal",
abstract = "This paper deals with the studies carried out on sensitivity, response and recovery time of a sensor array comprising of undoped and doped (palladium, platinum and gold) thick-film SnO2 sensors. Initially, the sensitivity of all the sensors of the array has been studied for H2, CO, CH4 and LPG followed by detailed analysis of transient response of Pd-doped sensors as it possesses better sensitivity for all the test gases. The response and recovery time of the Pd-doped sensor has been found to depend on type of gas and its concentration (upto 400 ppm). The response time is minimum for CO and maximum for H2 while recovery time is maximum for LPG and approximately same for H2 and CO. The observed results of response time have been explained on the basis of two-film theory, i.e. gas film-gas phase and solid-gas film interfaces. Further, the experimental result of the sensor array (sensitivity versus concentration and sensitivity versus response time) for all the test gases at an operating temperature of 350°C have been validated with an analytical model and the observed results are found to be in good agreement to that predicted by the model."
}
@article{Zhang1998875,
title = "The effects of nitrogen flow on the Raman spectra of polycrystalline diamond films",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "875 - 879",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00047-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000470",
author = "Qing Zhang and S.F. Yoon and J. Ahn and Rusli and Yong-Ping Guo",
keywords = "Polycrystalline diamond films",
keywords = "Raman scattering",
keywords = "X-ray diffraction",
abstract = "The effects of nitrogen on the formation and structure of polycrystalline diamond films prepared using a microwave plasma chemical vapour deposition system have been studied using Raman scattering, X-ray diffraction and X-ray photoelectron spectroscopy. It is found that the Raman spectra are significantly affected by nitrogen flow ratio, while the X-ray diffraction spectra only show certain changes in their peak intensity. Five Raman scattering peaks at 1140, 1190, 1350, 1480 and 1550 cm−1, respectively, are clearly observed. With increasing nitrogen flow ratio, the 1480 cm−1 peak decreases significnatly and the 1140 and 1190 cm−1 peaks remain almost unchanged in comparison with the 1350 and 1550 cm−1 peaks. These results indicate that nitrogen plays an important role in modifying the structure of polycrystalline diamond films."
}
@article{Samad1998881,
title = "Implementation of a high speed Fast Fourier Transform VLSI chip",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "881 - 887",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00048-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000482",
author = "S.A Samad and A Ragoub and M Othman and Z.A.M Shariff",
abstract = "Very high speed processing of radar signals has led to the requirement of very high speed conversion of signals from the time domain to the frequency domain. In this paper we discuss the implementation of an FFT chip based on the proposed digit slicing architecture. The paper begins with a discussion of the digit slicing technique. This is followed by discussion on the basic building blocks of the digit slicing FFT and implementation of a prototype digit slicing FFT using DSP station. The paper is concluded by comparing the speed and other properties of the unsliced FFT and digit slicing FFT architectures."
}
@article{Yoon1998889,
title = "V/III ratio effects on the growth of In1−x−yGaxAlyAs on InP substrates by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "889 - 893",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00050-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000500",
author = "S.F. Yoon and P.H. Zhang and H.Q. Zheng and K. Radhakrishnan",
keywords = "In1−x−yGaxAlyAs",
keywords = "Arsenic",
keywords = "Photoluminescence",
abstract = "In this paper, we report the effects of arsenic pressure (V/III ratio) on the properties of undoped In1−x−yGaxAlyAs layers grown by molecular beam epitaxy (MBE) on InP (100) substrates. The quaternary samples were analysed using double-axis X-ray diffraction (XRD) and low-temperature photoluminescence (PL). XRD analysis showed that the lattice mismatch was relatively insensitive to flux ratio variations within the range investigated (V/III from 14 to 73). PL full width at half-maximum (FWHM) as low as 12.7 meV (at 5 K), a value which is comparable to the best reported, was achieved at a V/III ratio = 33. The PL and XRD FWHMs broadened significantly as the V/III ratio was decreased below 21 or increased above 50. Within the range investigated, the optimum V/III ratio for the growth of InGaAlAss layers was found to be 21–50. The effect of the V/III ratio on the optical and crystalline properties was explained in terms of clustering, which was characterized by analysing the difference between the PL peak energy and the band-gap energy calculated from XRD compositional measurements."
}
@article{Belaroussi1998895,
title = "Evaluation and comparison of BiCMOS and MOS current mirrors",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "895 - 900",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00051-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000512",
author = "M.T. Belaroussi and D. Benamrouche and Y. Harabi",
keywords = "Bias circuits",
keywords = "Output swing",
keywords = "BiCMOS and MOS mirros",
abstract = "In this paper, characteristics of BiCMOS and MOS current mirrors are presented. Through comparisons, relative trade-offs in the use of various circuit configurations are shown. Each of the characteristics was investigated using the HSPICE tool, and the 0.8 μm BiCMOS process with a nominal transit frequency ƒt of 12 GHz for the bipolar devices"
}
@article{Abuelma'atti1998901,
title = "A novel single-input multiple-output current-mode current-controlled universal filter",
journal = "Microelectronics Journal",
volume = "29",
number = "11",
pages = "901 - 905",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00052-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000524",
author = "Muhammad Taher Abuelma'atti and Noman Ali Tasadduq",
keywords = "Current-controlled",
keywords = "Spice",
keywords = "Filter",
abstract = "A novel current-controlled current-mode universal filter is presented. The circuit uses six second-generation current-controlled conveyors and two grounded capacitors. The circuit enjoys independent control of the parameters ω0 and ω0/Q0, low active and passive sensitivities and can simultaneously realize all the five basic filter transfer functions. SPICE simulation results are included."
}
@article{Ninoslav1998669,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "669 - ",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00031-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000317",
author = "Ninoslav and Stojadinovic"
}
@article{Hiroshi1998671,
title = "Downsizing of silicon MOSFETs beyond 0.1 μm",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "671 - 678",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00032-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000329",
author = "Hiroshi and Iwai",
keywords = "CMOS scaling",
keywords = "MOSFET downsizing",
keywords = "Silicon LSIs",
abstract = "This paper gives an overview of CMOS scaling in the range of sub-0.1 μm. Recent advance in the downsizing of MOSFETs by using various new techniques is described. Possible limitation and of MOSFET downsizing is predicted. A future concept of silicon LSIs in the 2010s is discussed."
}
@article{VojinG1998679,
title = "Differential and pass-transistor CMOS logic for high performance systems",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "679 - 688",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00033-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000330",
author = "Vojin G. and Oklobdzija",
keywords = "Differential circuits",
keywords = "Dynamic logic",
keywords = "Latch",
keywords = "Flip-flop",
abstract = "This paper presents a review of differential and pass-transistor logic used in today's high performance systems. Various circuit and logic design styles used in contemporary high performance processors have been reviewed. The new logic is advantageous over standard CMOS in terms of performance and. very often in terms of area, speed and power as well. Evolution of various high performance latches has been presented."
}
@article{Golan1998689,
title = "A linear model application for the design of transparent conductive In203 coatings",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "689 - 694",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00034-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000342",
author = "G. Golan and A. Axelevitch and E. Rabinovitch",
keywords = "Transparent conductive coatings",
keywords = "Indium oxide thin films",
keywords = "DC magnetron sputtering",
abstract = "Highly transparent conductive indium oxide (In2O3) thin films were prepared by DC magnetron sputtering using a pure indium oxide target in an argon atmosphere. A linear programming method for the production design of these thin films using a sputtering process was proposed. Sputtering model calculations were founded on the ‘random partial sections in a multi-factor's space’ theory. The obtained model was further optimized by the ‘precipitous rise’ method in order to obtain optimal processing parameters. The chosen active factors of the sputtering process (independent of each other) were: argon pressure; substrate temperature; target voltage; and deposition duration. As a result of the optimization process, the obtained transparent conductive indium oxide thin films had the following parameters: transparency in 550 nm—90.7% (including the glass substrate having an absolute transparency of 91.08%); resistivity of up to 0.043 ω cm for a 2500 Å film thickness."
}
@article{Benda1998695,
title = "Deep energy levels in power diodes introduced by iridium diffusion",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "695 - 699",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00035-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000354",
author = "Vítězslav Benda and Martin Černík and Dana Štěpková",
keywords = "Iridium diffusion",
keywords = "Deep energy levels",
keywords = "Carrier lifetime",
keywords = "Power diodes",
keywords = "Soft reverse recovery",
abstract = "The results of a study carried out on N-type silicon and P+PNN+ silicon diodes diffused with iridium at temperatures ranging from 820 to 940°C are reported. The iridium-related deep energy levels were measured using DLTS method. The energy levels Ec = 0.16, 0.28 and 0.54 eV were found, the dominant recombination centre is of energy Ec − 0.28 eV. Besides the energy levels, the influence of iridium diffusion on carrier lifetime and basic parameters of the diode structures was studied. It was found that iridium diffusion may be used successfully for the fabrication of fast, soft reverse recovery power diodes."
}
@article{Ostroumova1998701,
title = "Current instabilities in the Auger transistor",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "701 - 708",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00036-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000366",
author = "E.V. Ostroumova and A.A. Rogachev",
keywords = "Auger transistor",
keywords = "Current instabilities",
keywords = "AlSi02nSi",
keywords = "Impact ionization",
keywords = "Hot electrons",
keywords = "Self-consistent quantum wells",
abstract = "The paper is devoted to the investigation of current instabilities in the AlSiO2nSi Auger transistor. We succeeded for the first time in creating the Auger transistor, in which we used a metal-insulator heterojunction instead of a widegap semiconductor. The Auger transistor base is created by the holes, which are induced by an electric field that exists in the oxide layer and is formed as a self-consistent quantum well near the n-silicon surface. The base width is about 10 Å and the well depth is equal to 0.7 eV or higher. The generation of electron-hole pairs by impact ionization (Auger generation) is the fastest physical process in semiconductors, which can be used for amplification and generation of electric signals. The impact ionization and drift regions are practically separated in the Auger transistor. The electron-hole pairs are generated in the transistor base and partly in the collector. The S- and N-type instabilities of the collector current in the Auger transistor in a circuit with a common emitter were investigated."
}
@article{Caddemi1998709,
title = "Influence of the temperature on the equivalent noise resistance of HEMTs at microwave frequencies",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "709 - 713",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00037-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000378",
author = "A. Caddemi and F. Di Prima and M. Sannino",
abstract = "This paper is focused on the performance of the noise resistance Rn of HEMTs at microwave frequencies as a function of temperature. A sensitivity analysis has been performed on several noisy circuit models of low-noise devices that we had previously characterized in terms of scattering and noise parameters. Such a study has been aimed at pointing out the role played by either the electrical elements and the noise temperatures of the resistors of the equivalent circuit on the typically observed U-shaped behavior of Rn."
}
@article{Randjelović1998715,
title = "Characterization, simulation and macro-modelling of vertical Hall devices",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "715 - 719",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00038-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800038X",
author = "Z. Randjelović and R.S. Popović",
abstract = "A new macro-model of a vertical Hall sensor and the corresponding procedure for the macro-model parameters extraction are presented. The active volume of the sensor is defined by the process simulation. The modulation effects of the active volume of the sensor and the sources of the non-linearity of the sensor response are examined by means of device simulation. In accordance with the simulation results and measured data, the macro-model based on the sensor physics is built. The parameters of this model are extracted from the device simulation data."
}
@article{Badila1998721,
title = "Integration technique for high frequency bipolar circuits",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "721 - 725",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00039-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000391",
author = "Marian Badila and Gheorghe Brezeanu and Florin Mitu and Gheorghe Dilimot and Cecilia Codreanu",
abstract = "An integration technique adapted for silicon bipolar technology with full implantation and self-aligned base and emitter contacts is presented. Two high frequency circuits, a Gilbert cell and an amplifier with a bandwidth of 700 MHz that operate from a 2 V supply voltage have been integrated. The circuits content only npn transistors with cutoff frequency between 1.4–16 GHz and BVCBO > 15 V. The amplifier circuit has an adjustable gain range of 10–40 dB (from a command voltage) for a large domain of supply voltages (2–16 V)."
}
@article{McDonagh1998727,
title = "CMOS bridge to frequency converter with gain and offset control",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "727 - 732",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00040-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000408",
author = "D. McDonagh and K.I. Arshak",
abstract = "This communication presents the design and simulation of a new CMOS bridge to frequency converter with gain and offset control. This circuit incorporates adjustable operating and centre frequencies. When the Wheatstone bridge was balanced, the simulated centre frequency varied from 10.9 kHz to 220 kHz by changing the external capacitor from 1.5 nF to 0.05 nF. Furthermore, for an unbalanced bridge, i.e., the resistors in the bridge were equal to their nominal value plus (or minus) 50ω, the variance from the centre frequency changed from 4.55 kHz to 67 kHz as the external capacitor was decreased. The gain and offset control features were implemented using pulse integrating frequency to voltage conversion and a differential amplifier with voltage inputs for gain and offset control. As the gain control frequency was varied between 60 and 200 kHz, the output centre frequency varied from 114 to 25 kHz. The offset control feature was simulated for the bridge resistors deviated by 50 ω."
}
@article{Wajsbürt1998733,
title = "Transistor controlled slew rate process independent PCI compliant I/O buffer with possible power/delay trade-off",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "733 - 740",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00102-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700102X",
author = "F. Wajsbürt and F. Pétrot and K. Dioury",
abstract = "A PCI compliant three-state input/output buffer featuring low power consumption, absence of passive elements and easy mapping on different target processes is presented. Firstly, a portable approach to layout using a process independent unit, named λ, that allows—in first approximation—to scale the design is introduced. Secondly, the PCI requirements and outline the main constraint for CMOS pads design are presented, that is, minimum fan-out and maximum slew rate are incompatible using a classical buffer. This leads to the definition of a buffer being where driving power and output slew rate are controlled independently. A full transistor scheme is presented and it is shown how to reach the PCI specifications using appropriate sizes for the transistors. It turns out that a power vs delay trade-off can be done by modifying a few transistor widths. Compliance is obtained using the same λ layout for two 0.8 μm and two 0.5 μm technologies."
}
@article{Živković1998741,
title = "Automatic symbolic analysis of SC networks using a modified nodal approach",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "741 - 746",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00041-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800041X",
author = "V.A. Živković and P.M. Petković and D.P. Milovanović",
abstract = "This paper presents a symbolic analysis of Switched-Capacitor (SC) circuits in the z-domain using Modified Nodal Approach (MNA). We have selected the MNA method as one of the widely established approaches in circuit analysis. The analyses are performed using SymsimC symbolic simulator which also enables s-domain network analysis. Macromodels of various SC-basic building blocks are utilized to decrease the number of equations describing the circuit which in turn relaxes the analysis. The results of simulations are demonstrated on a benchmark example of an SC-network that was frequently used in previous papers. The new feature imposed with this work is the examination of the influence of finite gain and bandwidth of operational amplifiers on the circuit's behaviour. The obtained results could serve as a valuable aid to the designer in the assessment of designed circuit performance."
}
@article{Rowley1998747,
title = "Design automation of σΔ DACs using SIGGEN",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "747 - 754",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00042-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000421",
author = "Kevin Rowley and Colin Lyden",
keywords = "σΔ DAC",
keywords = "Modulator",
keywords = "Analog",
abstract = "This paper presents a design tool dedicated to finding the optimum design solution for a ΣΔ DAC, based on a high level specification. The tool tackles the problem by first choosing the optimum ΣΔ modulator design by using a mixture of design equations and behavioral simulation. The tool enables a VHDL description of the interpolating stages and ΣΔ modulator to be generated. This facilitates automatic layout of the synthesized design. A high specification analog DAC cell completes the analog circuitry requirement. The layout of the analog part is manual but this is autoplaced and routed with the digital parts by commercial software.
Simulation results and layout data for a ΣΔ DAC design are presented as well as measurements from a fifth order, 18-bit ΣΔ modulator. This design was fabricated on a 1.2 μm, double-metal double poly technology."
}
@article{Strollo1998755,
title = "Performance analysis of a two-level carry-skip adder implemented in complementary pass-transistor logic",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "755 - 760",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00043-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000433",
author = "Antonio G.M. Strollo and Ettore Napoli",
abstract = "Performance evaluation of a two-level carry-skip adder using complementary pass-transistor logic (CPL) is presented in this paper. The adder is compared with a full-CMOS version of the two-level carry-skip architecture, with a carry-lookahead adder automatically generated with ALLIANCE CAD tools and with a recently proposed 32-bit carry-select adder. Furthermore, performances of a single-level carry-skip adder implemented in CPL. are investigated. These comparisons are carried out in order to evaluate the impact of the architecture and of the logic style on the performances. SPICE simulations of the circuit extracted from the layout, including parasitics, are used to evaluate the adders delay, while switch-level simulations are used to evaluate the average power dissipation. The proposed two-level carry-skip CPL adder is fast, area efficient and highly modular."
}
@article{tagkey1998761,
title = "Patents alert",
journal = "Microelectronics Journal",
volume = "29",
number = "10",
pages = "761 - 770",
year = "1998",
note = "21st International Conference Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00079-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000792",
key = "tagkey1998761"
}
@article{Henini1998577,
title = "Editorial introduction",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "577 - 578",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0016-2361(98)80007-4",
url = "http://www.sciencedirect.com/science/article/pii/S0016236198800074",
author = "M. Henini and J.M. Karam"
}
@article{Chau1998579,
title = "Technology for the high-volume manufacturing of integrated surface-micromachined accelerometer products",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "579 - 586",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00021-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000214",
author = "Kevin H.-L. Chau and Robert E. Sulouff Jr.",
keywords = "Accelerometers",
keywords = "Integrated Sensors",
keywords = "Capacitive Sensors",
keywords = "Surface micromachining",
keywords = "Micro-electro-mechanical systems",
keywords = "MEMS",
abstract = "Since the inception of silicon surface micromachining more than fifteen years ago, the technology has successfully emerged from academic research and has found practical applications in many high-volume sensor products. The integration of on-chip electronics, in particular, represents the highest level of technological accomplishment to date in surface micromachining technology. The integrated approach offers tremendous performance enhancements while presenting numerous challenges to actual production implementation. This paper uses the Analog Devices accelerometer product series as an example to review the integrated surface micromachining technology and the practical solutions to overcome many of its challenges for high-volume manufacturing."
}
@article{Ohlckers1998587,
title = "Challenges of the emerging microsystems industry",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "587 - 600",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00022-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000226",
author = "Per Ohlckers and Henrik Jakobsen",
abstract = "The microsystems industry is now a rapid growing industrial sector that has emerged during the three last decades. The onset was mainly a technological spin-off from microelectronics/integrated circuit technology. Silicon micromachining gave the main triggering technology push as a very promising process technology with distinctive features. Sensor applications gave the first market opportunities, and batch-organised processing technology adapted from the microelectronics industry the key to high quality at low cost. Today, this has matured into a separate industry sector with their own market and manufacturing infrastructure, also with a limited use of other materials than silicon. The microsystems are used in electronic systems with widespread applications, ranging from low cost, high volume automotive applications to high cost, low volume instrumentation applications. Key technological success and inhibitor factors for this industry are discussed. It is proposed that the most important are market opportunities, microelectronics manufacturing infrastructure and micromachining. In the future, computer-aided design and simulation tools will also gain importance. Examples from research and manufacturing of microsystems, mainly from SensoNor and SINTEF Microsystems in Norway, are used to illustrate these factors. It is proposed that the most important challenge for SensoNor is the transition from being sensor company to becoming a true microsystem company."
}
@article{Y1998601,
title = "Possible application of micromachine technology for nanometer lithography",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "601 - 611",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00023-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000238",
author = "Y. and Wada",
abstract = "This paper describes the possible application of micromachine technology for the future nanolithography tool below 100 nm era. Due to the limitation of optical lithography in delineating sub-100 nm fine patterns, several technologies are anticipated to replace the present optical lithography. However, neither electron beam lithography nor X-ray lithography would fulfill the requirements, e.g. throughput and registration for mass production tool in the below 100 nm era. Therefore, other lithography technology has to be ready for mass production use before the year 2005∼2010. Scanning probe microscope (SPM) lithography, which uses SPM as a pattern delineation tool, would be one of the most promising candidates for the mass production tool. However, the fundamental limitations of SPM lithography in writing speed, i.e. throughput, require that the micromachine SPM technology be employed in the mass production system. A practical full wafer complex lithography system which uses 104∼106 micromachine scanning tunneling microscope (μ-STM) is proposed, and the indispensable technologies are demonstrated. It also reports on the fabrication and characterization of μ-STM using complimentary metal-oxide-semiconductor field effect transistor (CMOS FET) comptaible technologies. Finally, the observation results are presented on the vacuum tunneling gap between two conductors of the μ-STM, using a high resolution transmission electron microscope (TEM), which demonstrates the possibility of realizing a highly reliable lithography system and characterizing an atom, which would lead to an atomic resolution lithography."
}
@article{Leclercq1998613,
title = "III–V micromachined devices for microsystems",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "613 - 619",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00024-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929800024X",
author = "J.L. Leclercq and R.P. Ribas and J.M. Karam and P. Viktorovitch",
keywords = "III–V",
keywords = "Micromachined devices",
keywords = "Microsystems",
keywords = "MEMS",
keywords = "Microtechnology",
abstract = "This paper aims to present a brief review on the specific features and advantages of the III–V micromachined devices for microsystems, making them an attractive alternative to the well developed Si-based microtechnology in the field of MEMS (Micro-Electro-Mechanical Systems). The GaAs-based MEMS processing techniques are more currently investigated for collective fabrication of low cost and high volume microsystem devices. Potential applications of InP-based microtechnology are presented for monolithic integration of optoelectronic functions with micro-electro-mechanical transducers enabling the realisation of MOEMS (Micro-Opto-Electro-Mechanical Systems)."
}
@article{Chun1998621,
title = "Monolithic integration of the digitized pressure sensor and the micromechanical switch for the application of a pressure transponder",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "621 - 626",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00025-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000251",
author = "Kukjin Chun and Hyeoncheol Kim",
keywords = "Monolithic integration",
keywords = "Pressure transponder",
keywords = "Micromechanical switch",
abstract = "For systems with newer and more functionality, there have been several approaches for building the monolithic integration of sensors, actuators and control circuitry on the same chip. And for implantable systems, the miniaturization and power delivery become more important. In this paper, the monolithic integration of a digitized pressure sensor, the micromechanical switch and interface circuitry for the application of pressure telemetry is proposed. The system is fabricated by the use of the surface and bulk micromachining suitable for a modular process. For compatibility with the CMOS process, a low-temperature process was adapted using a photoresist as sacrificial layer. The fabricated chip is 3 x 3 mm2. The measured pull-in voltage of the micromechanical switch is 19 V."
}
@article{Bianchi1998627,
title = "CMOS-compatible smart temperature sensors",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "627 - 636",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00026-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000263",
author = "R.A. Bianchi and F.Vinci Dos Santos and J.M. Karam and B. Courtois and F. Pressecq and S. Sifflet",
keywords = "CMOS",
keywords = "Smart temperature",
keywords = "Sensor",
abstract = "The properties, characteristics, applications and sensing principles of most of the present-day integrated smart temperature sensors are discussed in this paper. A CMOS process-compatible temperature sensor developed for low-cost high-volume integrated microsystems for a wide range of fields (such as automotive, space, oil prospecting, and biomedical applications), is also described. Concerning accuracy, a temperature error of 0.34°C rms in current mode and 1.86°C rms in voltage mode (without post-fabrication trimming) over the −50°C to 150°C temperature range are the measured performances of this integrated wide-range temperature sensor. Other important characteristics of the developed sensor are the low cost, the less than 1 mW power consumption, the higher than 40 dB PSRR, and the output signal swing which is intrinsically referenced to the temperature range and was specially conditioned for analog to digital conversion in both current and voltage modes. Finally, temperature sensor performances are compared and evaluated."
}
@article{Fujita1998637,
title = "Micro actuators and their applications",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "637 - 640",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00027-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000275",
author = "Hiroyuki Fujita and Hiroshi Toshiyoshi",
keywords = "Micromachines",
keywords = "Optical switch",
keywords = "Shape memory alloy",
keywords = "Microwave",
keywords = "Three-dimensional microstructures",
keywords = "Autonomous distributed systems",
abstract = "Driving principles, configurations and applications of micromachined actuators are reviewed. Examples, taken from our research activities, include an optical matrix switch composed of arrayed torsional micromirrors which are driven by electrostatic force; a microactuator using thin film shape memory alloy (TiNi); a microactuator for scanning a microwave antenna and a self-assembly of three-dimensional microstructures by scratch drive microactuators. A system architecture, an autonomous distributed micro system, is proposed to make best use of micromechatronic technology."
}
@article{Attia1998641,
title = "Fabrication and characterization of electrostatically driven silicon microbeams",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "641 - 644",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00028-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000287",
author = "P. Attia and M. Boutry and A. Bosseboeuf and P. Hesto",
keywords = "Micromechanical silicon device",
keywords = "R.I.E. etching",
keywords = "Electrostatic actuation",
abstract = "Free standing single-crystal silicon cantilever beams were fabricated by a SCREAM-like process which uses dry etching. Typical dimensions are length 200 μm, width 2–3 μm, thickness 2–3 μm. Cantilever beams were initially upward deflected by depositing a tungsten layer with a tensile stress. The electrostatic vertical actuation of the composite beam is investigated by biasing it with respect to the grounded substrate and lateral driving electrodes. A voltage of 10 V is sufficient to induce a large displacement of the beam free end up to 8 μm. A precise positioning is obtained with a good repeatability."
}
@article{Morrissey1998645,
title = "Some issues for microsystem packaging in plastic and 3D",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "645 - 650",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00029-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000299",
author = "A. Morrissey and G. Kelly and J. Alderman and J. Barrett and C. Lyden and L. O'Rourke",
keywords = "Microsystem packaging",
keywords = "Plastic",
keywords = "3D",
keywords = "Residual stress",
abstract = "This paper describes some of the key issues associated with the packaging of microsystems in plastic and 3D. These include hermeticity, residual stress, and thermal management. An example of packaging a silicon membrane pump is described which illustrates the residual stress problems associated with packaging devices in plastic. Alternative schemes based on the use of PCB spacer systems and PLCC off the shelf components are outlined."
}
@article{Fradin1998651,
title = "REBECA-3D: the thermal conductive solver for microelectronics",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "651 - 656",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00030-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000305",
author = "J.P. Fradin and B. Desaunettes",
keywords = "Thermal analysis",
keywords = "Boundary element method",
keywords = "Conductive solver",
keywords = "Modelling",
keywords = "Scale difference",
abstract = "REBECA-3D® (reliable boundary element conductive analyser for three-dimensional applications) is the software developed by Epsilon Ingeniérie that simulates thermal transfers driven by conductive exchanges. Using the boundary element method (BEM), REBECA-3D is at the same time a design tool and a modelling tool. It gives more accurate and reliable results than classical methods. The originality of this three-dimensional software is given hereafter in order to demonstrate its significance. The methodology of the stand-alone use of REBECA-3D is presented. Finally, the software is applied for different applications such as MMIC, MCM and packages."
}
@article{tagkey1998659,
title = "Patents alert",
journal = "Microelectronics Journal",
volume = "29",
number = "9",
pages = "659 - 668",
year = "1998",
note = "Low Dimensional Structures and Devices: Micromachined Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00068-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000688",
key = "tagkey1998659"
}
@article{Dananjayan1998495,
title = "A flyback constant frequency ZCS-ZVS quasi-resonant converter",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "495 - 504",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00110-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001109",
author = "P. Dananjayan and V. ShRam and C. Chellamuthu",
keywords = "Quasi-resonant converter",
keywords = "Zero current switching",
keywords = "Zero voltage scratching",
keywords = "Pulse-width modulation",
keywords = "Switched mode power supply",
abstract = "The analysis and simulation of a flyback zero current switching-zero voltage switching quasi-resonant converter operating at a constant switching frequency are discussed. Its output voltage is regulated by controlling the free-wheeling period of the resonant inductor. In addition to better controllability, it possesses the advantages of PWM and frequency-modulated converters. The principle of operation, steady state characteristics, design procedure and simulation of flyback constant frequency zero current switching-zero voltage switching quasi-resonant converter (CFZCSZVSQRC) are presented. A prototype of this converter is implemented."
}
@article{Flores1998505,
title = "The switching behaviour of the shorted anode base resistance MOS-controlled thyristor",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "505 - 508",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00111-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001110",
author = "D. Flores and X. Jordá and M. Vellvehi and J. Fernández and S. Hidalgo and J. Rebollo and J. Millán",
keywords = "Base resistance MOS-controlled thyristor (BRT)",
keywords = "Switching performance",
keywords = "Multicell structures",
abstract = "The electrical performance of a shorted anode BRT structure is described. It is shown that the inclusion of the back side shorted anode structure reduces the BRT transient losses since it allows a direct path for the extraction of electrons stored in the N− region during the turn-off process. The static and transient device operation has been analysed by numerical simulations. The reduction of the turn-off losses has been experimentally demonstrated by experimental data from fabricated 1100 V multicell structures."
}
@article{HanhoLee|Sobelman1998509,
title = "New XOR/XNOR and full adder circuits for low voltage, low power applications",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "509 - 517",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00120-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001201",
author = "Hanho Lee and Gerald E. Sobelman",
keywords = "Full adder circuits",
keywords = "XNOR",
keywords = "XOR",
keywords = "Tbreshold voltage",
keywords = "Full voltage swing",
abstract = "In this paper, the new low voltage operation exclusive-OR and exclusive-NOR circuits are proposed and a new full adder circuit has been developed. Since the dynamic power dissipation in CMOS is proportional to Vdd2 low voltage operation of the circuit is an important issue. The main design objectives for these new circuits are low power dissipation and full voltage swing at a low supply voltage Vdd = 2V). Several XOR circuits have been fully simulated using HSPICE with a 0.4 μm CMOS technology at a low supply voltage. The proposed XOR and XNOR circuits are compared with previously known circuits and shown to provide superior performance. The low voltage full adder circuit has been implemented using the new XOR, XNOR and MUX circuits. The simulation shows that the new low voltage full adder has less power dissipation and a smaller power-delay product than previous full adder circuits."
}
@article{Yoon1998519,
title = "Photoluminescence and X-ray diffraction analysis of In1−x−yGaxAlyAs/InP structures grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "519 - 524",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00124-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001249",
author = "S.F. Yoon and P.H. Zhang and H.Q. Zheng",
keywords = "Molecular beam epitaxy (MBE)",
keywords = "Double axis X-ray diffraction (XRD)",
keywords = "Low temperature photoluminescence (PL)",
keywords = "In1−x−yGaxAlyAs layers",
abstract = "We have investigated the effect of substrate temperature (Ts varied from 410 to 560°C) on the crystalline and optical properties of InI−x−yGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), :low temperature photoluminescence (PL) and energy dispersive X-ray spectroscopy (EDX). The crystalline quality and optical properties were found to be sensitive to the substrate temperature within the range investigated. The optimum substrate temperature range for the lowest XRD and PL full width at half maximum (FWHM) was found to be from 510 to 530°C. The PL FWHMs were lower than 20 meV for samples grown at 510°C, with the lowest value of 11.6 meV being recorded from the sample grown at 530°C. These values are comparable to the best values reported for this material system. From the PL spectra, the changeover from type I to type II transition was found to occur at an Al content exceeding 18%. The relationship between the normalised indium flux and lattice mismatch is presented."
}
@article{Oğuzhan1998525,
title = "New current conveyor based active-gyrator implementation",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "525 - 528",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00125-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001250",
author = "Oğuzhan and Çiçekoğlu",
keywords = "Current conveyors",
keywords = "Gyrators",
abstract = "An active-gyrator circuit employing one positive type and one negative type second generation current conveyors is presented. The circuit uses a minimum number of passive components which are all grounded and no element matching conditions are imposed. The circuit is compared with the existing ideally equivalent topology considering voltage and current tracking errors and loading effects."
}
@article{Schrom1998529,
title = "An interpolation based MOSFET model for low-voltage applications",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "529 - 534",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00002-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000020",
author = "Gerhard Schrom and Andreas Stach and Siegfried Selberherr",
abstract = "The development towards lower voltages and even ultra-low power (ULP) technologies [J.B. Burr, Symposium Record, Hot Chips V, 1993, pp. 7.4.1–7.4.12; D. Liu, Ch. Svensson, IEEE J. Solid State Circuits 28(1)(1993) 10–17; G. Schrom et al., 24th European Solid State Device Research Conference-ESSDERC'94, 1994, pp. 679–682] makes ever higher demands on compact device model accuracy. We present a new approach to dynamic MOSFET modeling, which is especially suited for the simulation of low-voltage mixed analog digital circuits. The model is based on the interpolation of terminal charges and conductive currents which are determined from transient current/voltage data which can be obtained through measurement or simulation of the devices. Using this model, a variety of analog and digital circuits was simulated, and selected results were verified against device-level circuit simulations."
}
@article{Volovichev1998535,
title = "Reliable rectifiers and photovoltaic converters for high levels of ionizing irradiation",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "535 - 542",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00005-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000056",
author = "I.N. Volovichev and Yu.G. Gurevichb and V.M. Koshkinb",
keywords = "Intrinsic semiconductors",
keywords = "Radiation stability",
keywords = "In2Te3",
abstract = "Nonlinear charge carrier transport has been investigated for the metal-intrinsic semiconductor-metal (M-i-M) and heterojunction of two intrinsic semiconductor (i-i) structures. It is shown that if the film thickness is of the order of the Debye screening radius, the current—voltage characteristics of these structures become comparable to those observed for the usual junctions at the base of doped semiconductors. The possibility of solid-state electronic devices at the base of M-i-M and i-i thin film structures is demonstrated. For intrinsic semiconductors, using semiconductors of the In2Te3 type, which cannot be effectively doped, but possess extremely high radiation stability, permits one to create a family of electronic devices for application under conditions of very high levels of ionizing irradiation."
}
@article{Attia1998543,
title = "Dependence of the resonant frequency of micromachined gold microbeams on polarisation voltage",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "543 - 546",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00006-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000068",
author = "P. Attia and P. Hesto",
keywords = "Gold cantilever beam",
keywords = "Resonant frequency",
keywords = "Natural frequency",
abstract = "We demonstrate the feasibility of micromachined tuneable gold cantilever beams. The test structures, composed of a deflectable cantilever microbeam, two lateral driving electrodes and a working part, are fabricated using a micromachining process with a single mask. The microbeams are typically 1 μm wide and 2 μm high, with variable lengths ranging from 40 to 60 /gmm to achieve natural resonant frequencies (f0) greater than 100 kHz. These resonators are electrostatically excited with a signal: v(t) = Vp + v sin ωt. Varying the polarisation voltage (Vp) produced a shift in the observed resonant frequency (fobs) of a few percent around f0, which makes this system tuneable. We describe the fabrication process, the frequency response and the frequency response and the frequency tuning of this device."
}
@article{Alan1998547,
title = "The embedded superscalar revolution",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "547 - 551",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00008-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000081",
author = "Alan and Hutton",
keywords = "Multitasking",
keywords = "Embedded controllers",
keywords = "DSP techniques",
abstract = "As embedded system costs are driven further down the learning curve and the demand for faster and more sophisticated processing capabilities increase, it is envisaged that future high performance real-time embedded controllers will need to address a ‘virtual multiprocessor’ environment. Multi-tasking embedded systems will become not only more cost effective for the next generation of embedded control applications but will offer more highly optimised system partitioning to satisfy the needs of embedded system designers well into the next century. Siemens new 32-bit microcontroller-DSP architecture, named TriCore, has been specifically designed to address such future system requirements. TriCore will exploit the advantages of a unified instruction set supporting both control and DSP tasks in a single compact RISC based core and complemented with a rich set of data types and uniform register set."
}
@article{Litovski1998553,
title = "Electronic circuit simulation in a mixed-language environment",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "553 - 558",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00014-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000147",
author = "Vančo Litovski and Željko Dimić and Milunka Damnjanović and Željko Mrčarica",
keywords = "co-simulation",
keywords = "AIeC++",
keywords = "HDL",
abstract = "Simulation of complex systems, that include analogue and digital circuitry and even non-electrical devices, may be simplified if libraries developed in different hardware description languages can be used in one design. This paper describes a method of co-simulation with Alecsis simulator/language environment and VHDL pre-developed libraries. Mixed-signal co-simulation results are presented."
}
@article{KhamiesM1998559,
title = "Simulation of open and shorted RC interconnect waveforms for voltage step function with low and high transient response",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "559 - 564",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00015-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000159",
author = "Khamies M. and El-Shennawy",
abstract = "This paper presents the waveform response interconnect analysis of the BiCMOS and ECL gates, modeled by uniformly distributed Resistance-Capacitance (RC) along the wire network, for node voltage step function. Two cases of interconnects, open and shorted waveform transient responses, are analysed. The current and voltage transient responses are plotted along the RC interconnect length for low normalized transient time τ = 0.0 and 0.01 and high normalized transient time τ up to 5. The simulation is carried out using two Laplace transformations. The second inverse Laplace transformation is determined by the contour integration, Heaviside expansion theorem, and bisection technique algorithms. The results show that the distribution of the current and voltage transient responses oscillate around the RC interconnect length axis having positive and negative values for normalized transient time τ = 0.0 and 0.01. Verification of the simulation analysis has been done for the two cases of the RC interconnect. Moreover, the results discriminate a positive current and voltage transient responses for normalized transient time higher than τ = 0.1, which is a very important criterion and should be taken into consideration during interconnect design techniques."
}
@article{Deshpande1998565,
title = "A new unified model for submicron MOSFETs",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "565 - 570",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00017-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000172",
author = "Devendra R. Deshpande and Aloke K. Dutta",
keywords = "Unified model",
keywords = "Submicron",
keywords = "MOSFETs",
keywords = "DIBL",
keywords = "Subthreshold",
abstract = "A new unified analytical model for submicron MOSFETs, valid for all regions of operation (including deep subthreshold), is presented in this paper. It accounts for the changes in the subthreshold slope with respect to the applied drain voltage. A new unification technique is proposed, which preserves the continuity of the drain current and its derivatives with respect to the applied terminal voltages at the various operating region boundaries. It passes the benchmark tests of Tsividis and Suyama (IEEE J. Sol. St. Circ., 29 (1994) 210–216) adequately, and thus, is suitable for analog circuit computer-aided design work. Also, the simulated results match well with the experimental results for deep submicron channel length devices."
}
@article{Mile1998571,
title = "Electronic devices and circuits—conventional flow version: Michael Hassu and Don Zimmerman, Prentice-Hall International Inc., 1997, 1068 pp., ISBN: 0-13-270224-X, $44.50",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "571 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80017-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800177",
author = "Mile and Stojev"
}
@article{SL1998572,
title = "Nonlinear systems, volume 3: Control: A.J. Fossard and D. Norman-Cyrot (eds) Chapman and Hall, UK, 1997, 208 pp., ISBN: 0 412600102, £59.00",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "572 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80019-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800190",
author = "S.L. and Hurst"
}
@article{StanleyL1998572,
title = "VHDL: A logic synthesis approach: D. Naylor and S. Jones, Chapman and Hall, UK, 1997, 338 pp., £55.00",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "572 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80018-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800189",
author = "Stanley L. and Hurst"
}
@article{DragiaP1998572,
title = "Analog integrated circuit: Edwin W. Greeneich, Chapman & Hall, 1997, 341 pp., ISBN: 0-412-08521-6",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "572 - 573",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80020-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800207",
author = "Dragia P. and Milovanovi"
}
@article{ZoranD1998573,
title = "Handbook of semiconductors, volume 4: Device physics: C. Hilsum (ed.) T.S. Moss (series ed.) North-Holland, Amsterdam, ISBN. 0 444 88813 (available from Elsevier Science, P.O. Box 211, 1000 AE Amsterdam, The Netherlands, or P.O. Box 945, Madison Square Station, New York, NY 10160-0757, U.S.A.)",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "573 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80021-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800219",
author = "Zoran D. and Priji"
}
@article{tagkey1998573,
title = "New prentice hall books on electron devices and circuits",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "573 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(98)90006-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269298900064",
key = "tagkey1998573"
}
@article{VB1998573,
title = "Electronic devices and circuits, 4th edition, T.F. Bogart Jr, Prentice Hall International Inc., 1997, 1001 pp. B5 (paperback)",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "573 - 574",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80022-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800220",
author = "V.B. and Kitowski"
}
@article{VB1998574,
title = "Analog electronics, An integrated PSpice approach, T.E. Price, Prentice Hall Europe, 1997, 706 pp. B5 (paperback)",
journal = "Microelectronics Journal",
volume = "29",
number = "8",
pages = "574 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)90007-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298900076",
author = "V.B. and Kitovski"
}
@article{Lal1998403,
title = "Influence of longitudinal electric field on vapour deposited thin films of cadmium sulphide—a report",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "403 - 407",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00023-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000232",
author = "Pyare Lal and S.K. Srivastava",
abstract = "In this report we give a brief account of the various processes of the formation of thin films. This is followed by a description of the influence of various deposition parameters on the characteristic properties of thin films. The electrical and structural characterization of vapour deposited cadmium sulphide films grown under the influence of electric fields is discussed. This article is a compilation of the previous reported results. Various observations (viz. conductivity measurement, thermoelectric power measurement X-ray observation and crossover voltage measurement) suggest that there is an increase in disorderliness (as a result of freezing in action) due to application of a dc electric field at the time of growth of the film."
}
@article{AhmedM1998409,
title = "A new filter configuration using current feedback op-amp",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "409 - 419",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00025-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000256",
author = "Ahmed M. and Soliman",
abstract = "A new general configuration which employs the current feedback op-amp and realizes second-order lowpass, bandpass and highpass responses is given. The proposed filters have the attractive advantage that the effects of the stray capacitance Cz and Rz can be absorbed within the filter components in all of the three cases. The proposed lowpass filter has the additional advantage of having the two capacitors grounded and the effect of Rx can also be absorbed within one of the filter resistors. PSpice simulation results that demonstrate the effects of a nonideal current feedback op-amp are included. Experimental results are also given."
}
@article{Margala1998421,
title = "1.2 V full-swing BiDPL logic gate",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "421 - 429",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00082-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000827",
author = "Martin Margala and Nelson G. Durdle",
abstract = "A novel full-swing BiDPL gate is proposed with greatly reduced power consumption, improved power efficiency at supply voltages down to 1.2 V and significantly reduced layout area. The new logic gate behaves like a standard CMOS for low fanout and is more power efficient for high fanout. The new circuit was compared to bootstrapped bipolar, bootstrapped full-swing and Seng-Rofail's bootstrapped BiCMOS logic styles, and the standard CMOS logic style. Low-power methodology was used for the optimization of all gates. Tests were performed at various power supply voltages (0.9–3 V), with various output load capacitances (0.1–1 pF), at a frequency of 50 MHz and temperature 27°C. At 1.2 V and output loads 0.1–0.7 pF the new circuit has up to 2.9 times better power efficiency than the best bootstrapped BiCMOS style reported and uses between 16 and 32% less switching power. Under optimal conditions (Vdd = 1.6 V), the new design has up to 18% higher power efficiency than conventional CMOS logic for loads 0.55–1 pF and up to 117% better power efficiency than the best reported BiCMOS style for output loads 0.1–0.68 pF. Test circuits have been designed and fabricated with 0.8 μm BiCMOS technology with Vthn = 0.8 V and Vthp = − 0.9 V."
}
@article{Aissi1998431,
title = "Reduction of complex MOS structures used in switch-level simulators",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "431 - 439",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00089-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700089X",
author = "Cherif Aissi and Desa Gobovic",
abstract = "The ratio of a transistor's width to its length is the only geometric parameter available to design engineers that affects the performance of a MOS transistor. This ratio, known also as the shape factor, defines the transistor strength. Most switch-level simulators are built with knowledge of the transistor strength. In this paper, a theory that will provide a method for calculating the equivalent transistor strength (shape factor) of complex MOS transistor structures is developed. In the case of non-series-parallel MOS structures, this method includes a Y-to-Δ transformation which usually leads to a significant reduction of circuit complexity. The results obtained are applicable to both NMOS and CMOS structures. The method introduced is illustrated by examples. Computer simulation is also used to show the validity and effectiveness of the results obtained."
}
@article{Abuelma'atti1998441,
title = "A translinear circuit for piecewise-linear approximation of nonlinear functions",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "441 - 444",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00095-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000955",
author = "Muhammad Taher Abuelma'atti and Sofian Mustafa Abed",
abstract = "A new technique for synthesizing piecewise-linear approximations of nonlinear functions is presented. The technique, using only transistors and current-sources, is simple, flexible, programmable and suitable for integration. Simulation results are included."
}
@article{Dwivedi1998445,
title = "The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (Pd-MOSC): a conductance study",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "445 - 450",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00096-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000967",
author = "D. Dwivedi and R. Dwivedi and S.K. Srivastava",
abstract = "The conductance versus gate voltage response of a palladium-gate MOS capacitor with 0.5 μm of TiO2 (oxide layer) has been studied as a function of hydrogen gas concentration and signal frequency. The structure of the device was completed by evaporating titanium dioxide over p 〈111〉-type silicon wafer (cleaned as per standard silicon technology) having a resistivity of 3–5 Ω cm and subsequent palladium front with aluminium back metallization. The G-V response of the fabricated MOS capacitor was studied on exposure to hydrogen in Ar ambient. The fabricated device is sensitive to hydrogen (1–3%) at room temperature. The interface state density (Dit) was determined at the surface potential corresponding to the peak in the conductance curve, using a bias scan conductance method at fixed frequency. It was found that Dit increases with an increase in hydrogen gas concentration. Further, it has been observed that a change in conductance is better at lower frequencies, which may be due to the balanced communication of interface traps with the valance and conduction bands of silicon substrate."
}
@article{Victory1998451,
title = "A three-dimensional, physically based compact model for IC VDMOS transistors",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "451 - 459",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00101-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001018",
author = "James Victory and Colin C. McAndrew and Rainer Thoma",
abstract = "A three-dimensional VDMOS model has been derived and implemented in SPICE. The model was developed and characterized for the square cell, rectangular grid device layout for Motorola's SmarTMOS™ technologies. The model includes physical models for RDSon over gate voltage, temperature and cell number. It also includes accurate, scalable models for the gate-charge, including the voltage-varying gate-drain capacitance and the distributed effects of the buried layer and interconnect metal resistances on the total on-resistance of the device. This allows efficient and accurate modeling of typical VDMOS layouts."
}
@article{Abuelma'atti1998461,
title = "Active-only sinusoidal oscillator",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "461 - 464",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00104-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001043",
author = "Muhammad Taher Abuelma'atti and Husain Abdullah Alzaher",
abstract = "A new active-only sinusoidal oscillator is proposed. The oscillator uses only two operational amplifiers and three operational transconductance amplifiers. Without using any external passive elements, voltage (or current) control of the frequency and condition of oscillation can be achieved by adjusting the bias currents of the OTAs. The proposed circuit enjoys low sensitivities."
}
@article{Abuelma'atti1998465,
title = "Translinear circuit for generating arbitrary power-law functions",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "465 - 470",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00109-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297001092",
author = "Muhammad Taher Abuelma'atti and Sofian Mustafa Abed",
abstract = "A new technique for designing arbitrary power-law circuits is presented. The technique, using only bipolar junction transistors and current sources, is simple and flexible and can be used to design power-law circuits with integer and non-integer powers and powers in the form of the ratio of two integers. The proposed technique results in programmable and integratable circuits. Simulation results illustrating the applications of the proposed technique are presented."
}
@article{M1998471,
title = "Scalable shared-memory multiprocessing: Daniel E. Lenoski, Wolf-Dietrich Weber, Morgan Kaufmann Publishers, Inc., San Francisco, California, USA, 698 pp., hardcover, £49.95, ISBN: 1-55860-315-8",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "471 - 472",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80010-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800104",
author = "M. and Stojev"
}
@article{M1998472,
title = "ARM System Architecture: Steve Furber, Addison-Wesley, Harlow, UK, 1996, 416 pp., ISBN: 0-201-40352-8 (paperbound), $36.95",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "472 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80011-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800116",
author = "M. and Stojev"
}
@article{M1998473,
title = "Digital designing with programmable logic devices: John W. Carter, Prentice-Hall, Upper Saddle River, 1997, 418 pp. ISBN: 0-13-373722-7 (hardbound), US$40.50",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "473 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80012-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800128",
author = "M. and Stojev"
}
@article{J1998473,
title = "Handbook on semiconductors, volume 1: Basic properties of semiconductors: T.S. Moss (series ed.) and P.T. Landsberg (volume ed.), Elsevier Science Publishers B.V., North-Holland, Amsterdam, 1992, xiv + 1204 pp., ISBN: 0-444-88855-1, Dfl. 595.00",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "473 - 474",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80013-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929880013X",
author = "J. and Karamarkovi"
}
@article{Ikonić1998474,
title = "Handbook on semiconductors, volume 2: Optical properties of semiconductors: T.S. Moss (series ed.) and M. Balkanski (volume ed.), Elsevier Science Publishers B.V., North-Holland, Amsterdam, 1994, 872 pp., ISBN: 0-444-89101-3, Dfl. 525.00",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "474 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80014-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800141",
author = "Z. Ikonić and V. Milanović"
}
@article{M1998474,
title = "Properties and growth of diamond: Gordon Davies (ed.), INSPEC, Institution of Electrical Engineers, London, UK, ISBN: 0-85296 875 2",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "474 - 475",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80015-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800153",
author = "M. and Henini"
}
@article{SL1998475,
title = "Optical FDM network technologies: K. Nosu, Artech House Books, Norwood, MA, 1997, 170 pp., £60.00",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "475 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80016-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800165",
author = "S.L. and Hurst"
}
@article{tagkey1998477,
title = "Patents alert",
journal = "Microelectronics Journal",
volume = "29",
number = "7",
pages = "477 - 494",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)00060-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298000603",
key = "tagkey1998477"
}
@article{Kumar1998299,
title = "Differential sheet resistivity of mixed implanted (phosphorus + boron) silicon",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "299 - 305",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00024-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000244",
author = "Anil Kumar and G.S. Virdi and P.J. George and S.K. Chattopadhyaya and N. Nath",
abstract = "This work highlights the effect of ion dose on sheet resistance of mixed implanted silicon using phosphorus and boron ions. The dose of phosphorus ions was kept fixed at 1 × 1014 ions/cm2, whereas dose of boron ions was varied from 1 × 1012 to 1 × 1014 ions/cm2. The results indicate that the sheet resistance is significantly affected by variation in boron ions dose. Carrier concentration profiles for these mixed implanted samples have also been plotted, by calculating differential sheet resistivity as a function of depth."
}
@article{Andy1998307,
title = "The VESA generalized timing formula",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "307 - 311",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00039-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000396",
author = "Andy and Morrish",
abstract = "VESA has defined a standard method by which new formats and timings can be generated. This will allow much greater flexibility in the choice of refresh rates and pixel formats than currently available with existing discrete monitor timings. The VESA generalized timing formula (GTF) describes a computational method that will provide standardization and yet also enable new features to be added to graphics systems and monitors, such as user-defined image resolution and low-cost automatic self-alignment of display devices. This paper describes the basis for the equations used within the GTF and how the timing parameters may be derived from a minimal set of system requirements."
}
@article{Milenkovic1998313,
title = "A quantitative analysis of wiring lengths in 2D and 3D VLSI",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "313 - 321",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00043-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000438",
author = "Aleksandar Milenkovic and Veljko Milutinovic",
abstract = "Performance and cost of the widely used submicron 2D VLSI technology are primarily determined by interconnection delays and on-chip area. One of the possibilities for overcoming this problem is the use of the innovative 3D VLSI. In this structure, shortening of interconnection wires can be achieved, resulting in better performance and packing density. This analysis assumes an existing 3D channel routing methodology, based on the 2D channel routing methodology for standard-cell VLSI. The interconnection wire length in 3D and 2D structures is compared for several examples of systolic arrays. The experiments show that the average interconnection wire length in 3D structures is from 20 to 50% of the average interconnection wire length in 2D structures, depending on the number of active layers in 3D VLSI."
}
@article{Pagey1998323,
title = "Application of byte error detecting codes to the design of self-checking circuits",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "323 - 333",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00044-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700044X",
author = "Sandeep Pagey and Asim J. Al-Khalili",
abstract = "In this paper, we discuss the application of byte error detecting codes to the design of self-checking circuits for the single stuck-at fault model. We discuss strongly fault-secure realization of a given Boolean function using byte error detecting codes. Even though parity is the most efficient separable code for the detection of single errors, we show that the use of a byte error detecting code can lead to lower cost of self-checking realization of a given function as compared to its self-checking realization using the parity code. We also present a method for the design of totally self-checking checkers for byte error detecting codes. Experimental results obtained for various test circuits are also discussed."
}
@article{Lahiri1998335,
title = "Kinetics of oxidation of copper alloy leadframes",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "335 - 341",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00052-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000529",
author = "S.K. Lahiri and N.K. Waalib Singh and K.W. Heng and L. Ang and L.C. Goh",
abstract = "Delamination of the oxide film from copper alloy leadframes is considered a serious reliability problem for microelectronics packages. In an effort to identify the factors which may lead to the formation of brittle and/or poorly adhering oxides, kinetics of oxidation of leadframes in air was investigated by measuring the oxide thickness as a function of time at temperatures ranging from 200 to 300°C. The oxidation was found to occur fairly rapidly in this temperature range. The oxide has the appearance of incoherent platelets and it consists of CuO and Cu2O. Analysis of the oxidation data indicates a logarithmic growth law in the 100–1400 nm thickness range, and an activation energy of about 19 kJ/mol, which is much smaller than that reported for the oxidation of unalloyed copper by a diffusion mechanism. The results of this investigation are presented here, indicating the important role of defects in the oxidation of leadframes."
}
@article{Rajeev1998343,
title = "Chip on glass—interconnect for row/column driver packaging",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "343 - 349",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00071-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000712",
author = "Rajeev and Joshi",
abstract = "New liquid crystal active matrix color flat panel displays and super twisted nematic liquid crystal displays and other flat panel displays are driving new interconnect technologies to make low cost, thin, compact, mass terminations with high resolution capabilities. Chip on glass (COG) and flip chip on glass (FCOG) are being used to mount the driver IC directly on to the glass LCD. FCOG and COG offer the highest density possible in packaging. Several interconnect technologies in FCOG/COG have been developed; their strengths and weaknesses are discussed in this paper. The challenges for COG adoption are also discussed."
}
@article{MS1998351,
title = "Optical fiber sensors vol. 3: Components and subsystems: B. Culshaw and J. Darke (eds), Artech House, Norwood, MA, 1966, 237 pp., £60.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "351 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00036-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000360",
author = "M.S. and Harris"
}
@article{StanleyL1998351,
title = "The radar technology encyclopedia: D.K. Barton and S.A. Leonov (eds), Artech House Books, Norwood, MA, 1997, 510 pp., £79.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "351 - 352",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00040-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000402",
author = "Stanley L. and Hurst"
}
@article{StanleyL1998352,
title = "High-level test synthesis of digital VLSI circuits: M.T.-C. Lee, Artech House Books, Norwood, MA, 1997, 220 pp., £55.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "352 - 353",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00041-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000414",
author = "Stanley L. and Hurst"
}
@article{StanleyL1998353,
title = "Analog integrated circuits: E.W. Greeneich, Chapman and Hall, NY, 1997, 341 pp., £55.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "353 - 354",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00042-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000426",
author = "Stanley L. and Hurst"
}
@article{GoranLj1998354,
title = "Multithreaded processor design: Simon W. Moore, Kluwer Academic Publishers, MA, 142 pp., ISBN: 0-7923-9718-5 (hardbound)",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "354 - 355",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00045-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000451",
author = "Goran Lj. and Djordjević"
}
@article{M1998355,
title = "Principles of digital design: Daniel D. Gajski, Prentice-Hall International, Inc., NJ, 1997, 447 pp., ISBN: 0-13-242397-9 (paperbound), US$42.50",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "355 - 357",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00046-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000463",
author = "M. and Stojčev"
}
@article{Mile1998357,
title = "Logic and computer design fundamentals: M. Morris Mano and Charles R. Kime, Prentice-Hall International Inc, NJ, 1997, 604 pp., ISBN: 0-13-206780-3 (paperbound), US$42.50",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "357 - 359",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00047-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000475",
author = "Mile and Stojčev"
}
@article{Ninoslav1998359,
title = "VLSI circuit simulation and optimization: V. Litovski and M. Zwolinski, Chapman and Hall, London, UK, 1996, 368 pp., ISBN: 0-412-63890-6, £59.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "359 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00048-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000487",
author = "Ninoslav and Stojadinović"
}
@article{M1998359,
title = "Practical digital logic design and testing: Parag K. Lala, Prentice-Hall, Englewood Cliffs, NJ, 1996, 420 pp., ISBN: 0-02-367171-8 (hardbound), US$42.50",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "359 - 361",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00049-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000499",
author = "M. and Stojčev"
}
@article{StanleyL1998361,
title = "Analog integrated circuit design: D.A. Johns and K. Martin, John Wiley, NY, 1997, 706 pp., £21.95 (hardbound)",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "361 - 362",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00051-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000517",
author = "Stanley L. and Hurst"
}
@article{MS1998362,
title = "Surface mount technology: Principles and practice (2nd edn): R.P. Prasad, Chapman and Hall, NY, 1997, 770 pp., £55.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "362 - 363",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00072-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000724",
author = "M.S. and Harris"
}
@article{MS1998363,
title = "Computer-aided design techniques for low power sequential logic circuits: J. Monteiro and S. Devadas, Kluwer Academic Publishers, Norwell, MA, 1977, 181 pp., US$88.00, UK£62.50, Dfl.165.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "363 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00073-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000736",
author = "M.S. and Harris"
}
@article{MS1998364,
title = "A top-down constraint-driven design methodology for analog integrated circuits: H. Chang, E. Charbon, U. Choudhury, A. Demir, E. Felt, E. Liu, E. Malavasi, A. Sangiovanni-Vincentelli and I. Vassiliou, Kluwer Academic Publishers, Norwell, MA, 1997, 366 pp., US$115.00, UK£81.65, Dfl.215.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "364 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00074-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000748",
author = "M.S. and Harris"
}
@article{MS1998364,
title = "Synthesis of finite state machines: Functional optimization: T. Kam, T. Villa, R. Brayton and A. Sangiovanni-Vincentelli, Kluwer Academic Publishers, Norwell, MA, 1997, 282 pp., US$110.00, UK£78.10, Dfl.205.00",
journal = "Microelectronics Journal",
volume = "29",
number = "6",
pages = "364 - 365",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00075-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700075X",
author = "M.S. and Harris"
}
@article{Székely1998159,
title = "Thermal investigations of ICs and microstructures II",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "159 - 162",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00053-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000530",
author = "V. Székely and M. Rencz and B. Courtois"
}
@article{Herzum1998163,
title = "High resolution temperature mapping of microelectronic structures using quantitative fluorescence microthermography",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "163 - 170",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00054-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000542",
author = "C. Herzum and C. Boit and J. Kölzer and J. Otto and R. Weiland",
abstract = "The impact and performance of fluorescence microthermography (FMT) are presented here. Specifications of lateral. resolution and temperature sensitivity are derived from test structure measurements. This method overcomes hot-spot localization limits of liquid crystal thermography (LCT) by improving both the lateral and the thermal resolution and by delivering temperature profiles instead of a binary signal. Temperature mappings of 6 mK sensitivity and a lateral resolution of the wafer prober microscope, here 0.5 μm, were obtained. The focus of this article is to demonstrate how the excellent performance of FMT can be used for routine applications of temperature mapping and hot-spot localization. In addition, we compared FMT to LCT, which is still the most widely applied hot-spot localization technique."
}
@article{Lewis1998171,
title = "Modelling and experimental study of heat deposition and transport in a semiconductor laser diode",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "171 - 179",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00055-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000554",
author = "D. Lewis and S. Dilhaire and T. Phan and V. Quintard and V. Hornung and W. Claeys",
abstract = "An analytical model of heat transport in a laser diode is presented together with measurements of the temperature distribution by photothermal microscopy. Comparison between model and measurements shows the temperature distribution to be issued from a cylindrical heat source diffusing in the surrounding bulk material. Laser output facet heating by stimulated photon absorption is shown to be of negligible importance."
}
@article{Phan1998181,
title = "Thermoreflectance measurements of transient temperature upon integrated circuits: application to thermal conductivity identification",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "181 - 190",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00056-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000566",
author = "T. Phan and S. Dilhairel and V. Quintard and W. Claeys and J.C. Batsale",
abstract = "An analytical 2D study, based on the method of integral transform, for transient heat transfer in a multilayered structure, and an optical technique for transient temperature measurement have been developed. Their application to the case of Joule heating of micrometric interconnections on submicron insulation layers permits one to identify thermophysical properties of the materials involved."
}
@article{Pogany1998191,
title = "Study of thermal effects in GaAs micromachined power sensor microsystems by an optical interferometer technique",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "191 - 198",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00057-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000578",
author = "D. Pogany and N. Seliger and T. Lalinský and J. Kuzmík and P. Habaš and P. Hrkút and E. Gornik",
abstract = "A contactless and non-invasive optical interferometric method is used to study the temperature distribution and thermal time response in a GaAs micromachined power sensor. Temperature variations in the sensor active area-a cantilever beam—are sensed by an infrared laser beam. The temperature increase due to pulsed power dissipation in the cantilever induces an increase both in the GaAs refractive index and in the cantilever thickness. This results in a change in the phase and intensity of the reflected laser beam which is interferometrically detected. The spatial temperature distribution along the cantilever beam is studied using measurements of the optical phase and intensity as a function of the dissipated power. The optical signal is analysed taking into account Fabry-Perot interference. The thermal time constant of the sensor of about 5 msec is obtained from transient optical signal measurements. Results of the optical analysis are consistent with those of electrical characterization of the sensor and with the simulation of the temperature distribution."
}
@article{O'Flaherty1998199,
title = "Thermal resistance measurement protocols",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "199 - 208",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00058-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700058X",
author = "M. O'Flaherty and C. Cahill and K. Rodgers and O. Slattery",
abstract = "Thermal data supplied by manufacturers and used as a benchmark in a comparison of the thermal performance of different packages must be treated with caution, as the results are specific to the measurement environment of the supplier. For this reason, calculations of expected component thermal performance based on these data can be erroneous. This paper is an analysis of the discrepancies observed in thermal test results owing to small changes in the exact implementation of the measurements and in the calibration of the device temperature-sensitive parameter (diode Vf). It concludes with recommendations for ensuring more accurate and reproducible thermal resistance measurements."
}
@article{Malinski1998209,
title = "Determination of the quality of the soldering of semiconductor chips by the alternating-heat-flux method",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "209 - 213",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00059-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000591",
author = "Miroslaw Malinski and Zbigniew Suszynski and Leszek Bychto",
abstract = "The results of the photoacoustic measurements of the semiconductor chips of the bipolar transistors soldered to the lead frame are presented. The correlation between the phase of the temperature and the force necessary for the detachment of the chips from the lead frames was observed."
}
@article{deCogan1998215,
title = "Sub-surface feature location and identification using inverse TLM techniques",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "215 - 222",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00060-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000608",
author = "D. de Cogan and A. Soulos and K.O. Chichlowski",
abstract = "This paper describes several techniques involving transmission line matrix modelling which can be used to locate and characterize inhomogeneous features within a circuit package where the thermal response to heating of the underside is inspected at the top surface. These are used to confirm a semi-empirical thermal non-destructive testing approach to the determination of the lateral dimensions of a feature. The time to maximum contrast is an important parameter which can be used to estimate the depth of the same feature. This paper then describes our approach to the determination of feature thermal parameters and the influence of measurement noise on overall accuracy of the estimate."
}
@article{Wiecek1998223,
title = "Active thermography application for solder thickness measurement in surface mounted device technology",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "223 - 228",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00061-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700061X",
author = "Boguslaw Wiecek and Erwin De Baetselier and Gilbert De Mey",
abstract = "In this paper we discuss an active thermography application measuring solder (Sn/Pb) thickness on printed circuit boards (PCBs). We use an infrared thermographic camera to measure the transient thermal response on the PCB during back side irradiation of the latter with an infrared light source. Different solder thickness yields a different thermal behaviour on the solder surface. This because of the difference in parameters such as the capacity and the conductivity. Using basic parameter extraction procedures, we were able to measure solder thickness. The resolution of the method depends on the properties of the camera. With the available camera (sensitivity 0.2K, 16 gray scales) this resolution is estimated to be 20 μm. Of course other measurement methods exist. However, the method used by us allows fast measurements during the production cycle. Also, numerical simulations for a complex layered structure (epoxy-solder) have been done in order to obtain the temperature decay after irradiation with the infrared source, and its dependency upon the solder thickness."
}
@article{Nooshabadi1998229,
title = "A MOS transistor thermal sub-circuit for the SPICE circuit simulator",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "229 - 234",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00062-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000621",
author = "Saeiid Nooshabadi and G.S. Visweswaran and D. Nagchoudhuri",
abstract = "This paper discusses the design of a SPICE sub-circuit for the MOS transistor to model the thermal effects under dynamic thermal conditions. This makes simulation of temperature critical analogue macrofunctions more accurate and efficient."
}
@article{Kolev1998235,
title = "Mathematical modelling of a porous silicon-based pellistor-type catalytic flammable gas sensor",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "235 - 239",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00063-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000633",
author = "S.D. Kolev and M. Ádám and I. Bársony and A. van den Berg and C. Cobianu and S. Kulinyi",
abstract = "The development of a three-dimensional thermal mathematical model of a pellistor based on the fundamental physical laws of heat transfer and employing a few clearly stated simplifying assumptions concerning the convective heat transfer in ambient air is reported. The model was numerically solved using the implicit alternating-direction finite difference method. The software was written in Microsoft and Gnu C and run on a PC. Simulations for studying the transient heat transfer in the absence of flammable gas were performed. Refinement of the model in terms of reducing the simplifying assumptions and the experimental verification of the simulated thermal behaviour of the model structure is in progress. In its final form the model should be capable of describing more sophisticated micro-pellistor structures."
}
@article{Csendes1998241,
title = "An efficient thermal simulation tool for ICs, microsystem elements and MCMs: the μS-THERMANAL",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "241 - 255",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00064-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000645",
author = "A. Csendes and V. Székely and M. Rencz",
abstract = "Integrated microsystems raise new problems in thermal simulation. The frequently used structures such as cantilevers and membranes have different heat transfer properties than the simple silicon cubes of conventional integrated circuits (ICs). To take advantage of this, numerous functions are realized on these structures based on the thermal principle. Quick and correct thermal simulation of these structures is needed during the design process. The paper presents the μS-THERMANAL thermal simulation tool which is capable of simulating, beyond the IC chips and three-dimensional multi-chip module packaging structures, the cantilever, the bridge and the membrane structures as well, both in steady-state and in the frequency-domain case. The algorithms of the program, based on the Fourier method, are detailed in the paper and numerous examples illustrate the capabilities of the tool."
}
@article{V1998257,
title = "THERMODEL: a tool for compact dynamic thermal model generation",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "257 - 267",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00065-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000657",
author = "V. and Székely",
abstract = "THERMODEL is a software tool which generates compact thermal models to describe the heat conduction of three-dimensional physical structures, from either the time-domain or the frequency-domain response of the given structure. The generated compact model consists of a single (or twin) RC ladder of 8–12 stages. Both the one-port and the transfer thermal behavior can be modeled. These compact models can be useful in circuit-level simulators (like SPICE or ELDO) where thermal effects have to be considered in the model or in the electrothermal integrated circuit chip simulators where all the relevant thermal couplings of the chip can be modeled in this way."
}
@article{Lin1998269,
title = "Electro, thermal and elastic characterizations of suspended micro beams",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "269 - 276",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00066-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000669",
author = "Liwei Lin and Mu Chiao",
abstract = "An electro-thermal-elastic model for characterizing thermal buckling behavior of nucromachined beams has been developed. These micro beams are made of heavily phosphorus-doped polysilicon by surface micromachining technology. When electrically self-heated, the clamped-clamped beams may buckle under high compressive thermal stresses. The electro-thermal and thermal-elastic responses have been analyzed separately to establish the overall electro-thermal-elastic characteristics. It is predicted that a 2 μm wide, 2.2 μm thick and 100 μm long clamped-clamped suspended micro beam will buckle under a 6 mA input current. The lateral deflection is about 2.7 μm at the center of the beam. The analytical results are consistent with experimental observations."
}
@article{Montané1998277,
title = "A compact temperature sensor for a 1.0 μm CMOS technology using lateral p-n-p transistors",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "277 - 281",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00067-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000670",
author = "Enric Montané and Sebastian A. Bota and Josep Samitier",
abstract = "A compact temperature sensor using lateral p-n-p bipolar transistors has been fabricated and tested in a standard 1.0 μm digital n-well CNIOS process. Like their n-p-n counterparts in p-well processes, these lateral p-n-p devices exhibit good lateral β. The accuracy of the temperature sensor is close to the performances obtained in bipolar technology, an output proportional to absolute temperature is obtained (0.54mV/K) from 0 to +70°C, although the sensor can be used in wide-ranging applications after curvature correction. The device has an area of only 0.018 mm2."
}
@article{Jiménez1998283,
title = "Simulation of flow sensors for home appliances",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "283 - 289",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00068-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000682",
author = "V. Jiménez and F. Masana and M. Domínguez and L. Castañer",
abstract = "Hot-wire flow meters are currently usual as flow sensing devices. In this work, we explain the procedure used to simulate a water flow sensor for home appliances. The proposed system is composed of a thermally activated subsystem and an electronic subsystem which provides feedback and output read-out. The complete system has been fabricated, and the measurements corroborate the simulation procedure."
}
@article{Dillner1998291,
title = "Thermal simulation of a micromachined thermopile-based thin-film gas flow sensor",
journal = "Microelectronics Journal",
volume = "29",
number = "4–5",
pages = "291 - 297",
year = "1998",
note = "Thermal Investigations of ICs and Microstructures II",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00069-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000694",
author = "U. Dillner and E. Kessler and S. Poser and V. Baier and J. Müller",
abstract = "FEM calculations of a thermal gas flow sensor based on thermopiles made of thin films of Bi0.87Sb0.13 as n-type material and Sb as p-type material are presented. The results of thermal simulations concerning the response of the signal voltage to variations of the flow velocity at constant gas temperature as well as to variations of the gas temperature at constant flow velocity are compared with experimental data. The good agreement between calculated and experimental results confirms the proposed two-dimensional thermal model. The design as a classical delta-T-type flow sensor did not result in a complete suppression of the influence of gas temperature variations to the sensor response."
}
@article{AlokeK199867,
title = "On the output impedance of a BJT Wilson current source",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "67 - 70",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00014-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000141",
author = "Aloke K. and Dutta",
abstract = "In this paper, we present a more exact expression for the output impedance of a BJT Wilson current source, which gives a much better accuracy (with typical error <8%) with respect to SPICE simulation even for low-voltage applications, as compared to the commonly used expression of βoro2, which may give an error of as much as 63%. Also, the expression developed in this work underestimates the actual output impedance, which is safer than the overestimation provided by the approximation βoro2."
}
@article{Fornara199871,
title = "Accurate two-dimensional modelling of the titanium silicide process with an application to a thin base n-p-n bipolar transistor",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "71 - 81",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00019-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000190",
author = "P. Fornara and S. Denorme and E. de Berranger and D. Mathiot and M. Mouis and A. Poncet",
abstract = "The aim of this paper is to present a physically based model of titanium silicide growth, which allows two-dimensional numerical simulation of the self-aligned silicide process in both MOS and bipolar technologies. This model is able to describe the specific effects on topography and dopant redistribution occurring during titanium silicide growth. A straightforward application of this model shows the influence of silicidation on the device characteristics of a thin base n-p-n bipolar transistor."
}
@article{Abuelma'atti199883,
title = "New single-element-controlled sinusoidal oscillators employing CCII+",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "83 - 86",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00020-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000207",
author = "Muhammad Taher Abuelma'atti and Hassan Al-Daghrier",
abstract = "Six new grounded-capacitor grounded-resistor sinusoidal oscillator circuits using positive second-generation current-conveyors (CCII+) are presented. All the circuits enjoy totally uncoupled frequency and condition of oscillation. Experimental results are included."
}
@article{Teng199887,
title = "Efficient implementation of finite difference schemes for semiconductor device simulations",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "87 - 95",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00021-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000219",
author = "Zhi-meng Teng and Fu-yan Zhang and Jiang Zheng",
abstract = "This paper presents a high-accuracy difference approach for the convection term included in semiconductor device models to reduce the crosswind diffusion inherent in the SG scheme and substitutes it for the SG scheme in MINIMOS 4.0. The discretization equations are solved by the ILUCGS scheme. The results of semiconductor device simulations show that the crosswind diffusion inherent in the SG scheme has a significant influence, so that the corresponding numerical results may not represent the realistic solutions of the physical model though the drain current obtained by this scheme is very accurate."
}
@article{Iakovlev199897,
title = "High performance AlGaAs-based laser diodes: Fabrication, characterization and applications",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "97 - 104",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00027-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929700027X",
author = "V. Iakovlev and A. Sarbu and A. Mereutza and G. Suruceanu and A. Caliman and O. Catughin and A. Lupu and S. Vieru",
abstract = "Data are presented on high performance AlGsAs/GaAs and InGaAs/AlGaAs quantum well laser diodes fabricated by low temperature liquid phase mesa melt-etching and regrowth. The base laser structures were grown either by molecular beam epitaxy or metal-organic vapour phase epitaxy MOVPE. Native oxides were used as a mask in the melt-etching and regrowth processes. Cylindrical microlenses were used for obtaining equal divergence angles in both planes, perpendicular and parallel to the active layer plane at more than 1 W of continuous wave operation optical power. Characterization of mirror catastrophical degradation of single mode laser diodes using traditional electrooptical parameters as well as the parameters of internal second-harmonic generation and measurements of excess mirror temperature were performed. The thermal resistance, active layer mirror temperature and spectral width have been determined as well."
}
@article{Andrew1998105,
title = "Multiphase synchronous circuits for low power performance",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "105 - 111",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00034-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000347",
author = "R. Andrew and K. Venos",
abstract = "In a p-phase synchronous circuit the state register is partitioned into p parts which are clocked in sequence. This results in lower power consumption in a CMOS implementation. The paper gives an overview of the multiphase design techniques, and provides a comparison between the power consumption of multiphase and conventional synchronous circuits."
}
@article{Arató1998113,
title = "Effective graph generation from VHDL descriptions",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "113 - 121",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00037-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000372",
author = "P. Arató and T. Visegrády",
abstract = "The transformation between a problem description and a data dependency graph is a step that results in a significant reduction of freedom during high-level synthesis. This paper presents an evaluation of different graph generation methods and makes a suggestion on the methods to be employed in the solution of such a problem. High-level synthesis takes its input written in an artificial language, i.e. VHDL or one of several similar languages [1]. These descriptions take the form of functions which must be transformed to a hardware realization using the steps of initial allocation, scheduling and allocation."
}
@article{Abuelma'atti1998123,
title = "Novel grounded-capacitor active biquads using FiTFNs",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "123 - 132",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00076-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000761",
author = "Muhammad Taher Abuelma'atti and Husain Abdullah Al-Zaher and Muhammad Abdullah Al-Qahtani",
abstract = "Novel current-, voltage- and mixed-mode grounded-capacitor active biquad circuit designs, using the five-terminal floating nullors, are presented. The proposed circuits enjoy low active and passive sensitivities and independent grounded-element control of the parameters ω0 and ω0Q0."
}
@article{AhmedM1998133,
title = "Current conveyor filters: Classification and review",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "133 - 149",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00080-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000803",
author = "Ahmed M. and Soliman",
abstract = "Second-generation current-conveyor (CCII) filters are classified into four classes based on the number of CCIIs employed. First, several voltage-mode and current-mode single CCII filters are described. A family of CCII voltage-mode and current-mode filters based on the two-integrator loop is generated using the building blocks approach. Two universal filters realizing the three transfer functions are given: one is a voltage-mode filter which employs five CCIIs, and the second is a current-mode filter which employs four two-output CCIIs. Both of the universal filters employ grounded elements, and are very attractive for VLSI realization by using MOS grounded resistors. All the filters considered are evaluated based on non-ideal CCIIs. Sensitivities and design equations for each circuit are given."
}
@article{Melikian1998151,
title = "Optimization of SPICE system LEVEL3 MOSFET transistor models based on dc measurements",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "151 - 156",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00081-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000815",
author = "V. Melikian and V. Mnatsakanian and N. Uzunoglou",
abstract = "This paper presents an efficient and reliable method for general semiconductor device parameter extraction. The basic principle of SPICE system LEVEL3 MOS transistor model parameters is considered which is based on iterative specifications. The parameter extraction technique consists of minimization of an objective function. Various strategies are proposed to make the parameter extraction task more efficient and accurate. According to the proposed technique, a model-independent parameter extraction program was implemented and highly satisfactory results were obtained."
}
@article{M1998157,
title = "The designer's guide to VHDL: Peter J. Ashenden, Morgan Kaufmann Publishers, Inc., San Francisco, California, 688 pp., □25.95, ISBN: 1-55860-270-5 (paperback)",
journal = "Microelectronics Journal",
volume = "29",
number = "3",
pages = "157 - 158",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00015-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000153",
author = "M. and Stojčev"
}
@article{tagkey1998IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "IFC - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)90002-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298900027",
key = "tagkey1998IFC"
}
@article{Pantić19981,
title = "A new technology computer-aided design (TCAD) system based on neural network models",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "1 - 4",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00016-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000165",
author = "Dragan Pantić and Tatjana Trajković and Ninoslav Stojadinović",
abstract = "A new technology computer-aided design (TCAD) system based on neural network models is proposed and efficiency is demonstrated through the simulation and optimization of power VDMOSFET manufacturing technology."
}
@article{Dimitriadis19985,
title = "Reversible and irreversible effects on the electrical characteristics of new high-speed aSi and aSiC switches",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "5 - 11",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00017-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000177",
author = "E.I. Dimitriadis and N. Georgoulas and A. Thanailakis",
abstract = "The reversible effect of various factors, such as temperature, light intensity and potential applied to a gate electrode, on the electrical characteristics of new high-speed aSi/cSi- and aSiC/cSi-based switches are, for the first time, presented and discussed in this paper. The irreversible effect of the width of amorphous film on the electrical characteristics of these switches is also studied. The values of forward breakover voltage (VBF), forward voltage drop (VF) and holding current (Ih) of these thyristor-like switches may be either reversibly or irreversibly controlled by varying the above factors, thus controlling the device operation."
}
@article{Boualem199813,
title = "Design and optimization of a low-power and very-high-performance 0.25 μm advanced pnp bipolar process",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "13 - 19",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00018-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000189",
author = "Boualem and Djezzar",
abstract = "The low-power and very-high-performance 0.25 μm vertical pnp bipolar process is designed and characterized by using the mixed two-dimensional numerical device/circuit simulator (CODECS). This pnp transistor has a 25 nm-wide emitter, a 38 nm-wide base region, a current gain of 17 (without polySi emitter effect) and maximum cut-off frequency of 24 GHz. The conventional ECL circuit, designed by this pnp transistor, exhibits an unloaded gate delay of 22 psec at 1.75 mW, and a delay time less than 16 psec/stage for an unloaded ECL ring-oscillator."
}
@article{Li199821,
title = "Correcting separation errors related to contact resistance measurement",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "21 - 30",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00028-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000281",
author = "Yao Li and H.Barry Harrison and Geoffrey K. Reeves",
abstract = "A two-layer transmission line model has been proposed to model the sheet resistance of a semiconductor layer of finite thickness outside the ohmic contact region of a transmission line model test pattern. It is shown that the effective sheet resistance is a function of the separation between the contacts and that there is a pivot point in the curve of the total resistance between the contacts versus their separation. The work reveals an error in the measurement of Rc using the standard tlm for small contact spacing. The results are in agreement with simulation results obtained from the boundary element method."
}
@article{Pidin199831,
title = "Parasitic series resistance extraction and impact ionization current modeling for SOI MOSFETs",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "31 - 41",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00035-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000359",
author = "S. Pidin and M. Koyanagi",
abstract = "The impact ionization phenomenon in submicron lightly doped drain (LDD) silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is investigated using devices with body terminals. It is shown that an accurate model for the imact ionization current in submicron LDD SOI MOSFETs has to account for the voltage drop on the parasitic source-and-drain series resistances and the gate-voltage-dependent saturation field in the expression for the maximum channel electric field Em. It is demonstrated that the plot of IIMP(IDEm) versus 1Em is a single straight line for a given technology. In addition, a new numerical extraction method is proposed to determine the voltage-dependent drain-and-source parasitic series resistances and effective channel length of LDD SOI MOSFETs. The method is based on measuring output resistances of transistors with varying channel length."
}
@article{Kuntman199843,
title = "Novel approach to the calculation of non-linear harmonic distortion coefficients in CMOS amplifiers",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "43 - 48",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00038-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000384",
author = "H.Hakan Kuntman and Ali Zeki",
abstract = "In this paper, starting from an accurate MOSFET model, new expressions for calculating the harmonic distortion coefficients of active-loaded CMOS amplifier are derived. The accuracy of derived expressions is demonstrated on a circuit example. The proposed expressions are especially suitable for investigation of the harmonic distortion properties of CMOS amplifiers. The results are not obtainable with conventional SPICE simulation, therefore derived expressions provide the possibility of completing the simulation with hand calculations in the design of low-distortion and low-cost CMOS operational amplifiers."
}
@article{DallaBetta199849,
title = "Design and optimization of an npn silicon bipolar phototransistor for optical position encoders",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "49 - 58",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00070-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000700",
author = "G.F. Dalla Betta and G.U. Pignatel and G. Verzellesi and P. Bellutti and M. Boscardin and L. Ferrario and N. Zorzi and A. Maglione",
abstract = "We describe an activity aimed at developing npn silicon bipolar phototransistors to be used in optical position encoders. Extensive numerical proces and device simulations have been carried out, providing the guidelines for the definition of the phototransistor fabrication process. Results from the electrical and optical characterization of manifactured devices are shown. With respect to the designed fabrication process, only a little adjustment of the technological parameters has been to be necessary to achieve a final product suitable for the intended application."
}
@article{Hou199859,
title = "Realization of floatong immittance function simulators using CCII+",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "59 - 63",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00079-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000797",
author = "Chun-Li Hou and Wei-Yu Wang",
abstract = "In this study a generalized scheme for realizing any real rational floating immittance function simulator is proposed. This method does not need matched resistors. The circuit uses only second-generation current conveyors CCII+. Moreover, the current which flows into the given simulator is almost the same as the current which flows out of the simulator. The simulators can be integrated in current IC technology with all capacitors being grounded. They perform well over a wide a frequency range. The experimental results on a given simulator are included."
}
@article{N199865,
title = "Silicon sensors and circuits: On-chip compatibility: R.F. Wolffenbuttel (ed.), Chapman and Hall, UK, 313 pp., ISBN: 0 412 70970 8",
journal = "Microelectronics Journal",
volume = "29",
number = "1–2",
pages = "65 - ",
year = "1998",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00077-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000773",
author = "N. and Janković"
}
@article{tagkey1997i,
title = "News and features in device applications, processes, and materials, being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "i - xxiv",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90008-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900082",
key = "tagkey1997i"
}
@article{Mohamed1997703,
title = "Introduction to the 2nd international workshop on growth, characterization and exploitation of epitaxial compound semiconductor on novel index surfaces (NIS '96)",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "703 - 705",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00107-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001073",
author = "Mohamed and Henini"
}
@article{DL1997707,
title = "Piezoelectric effects in strained layer heterostructures grown on novel index substrates",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "707 - 715",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00108-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001085",
author = "D.L. and Smith",
abstract = "III–V and II–VI semiconductors are piezoelectric and therefore electric fields can be generated in strained layer heterostructures formed from these materials. The strain induced electric fields depend on the symmetry of the strain, which in turn depends on the orientation of the substrate on which the heterostructure is grown. For strain generated electric fields to occur in a zincblende structure semiconductor, the strain must distort the angles of the cubic unit cell away from 90°. Strains in (100) oriented heterostructures do not distort the 90° angles of the cubic unit cell and no electric fields are generated. However, for other substrate orientations, electric fields can be generated in the strained layers. These electric fields can lead to large changes in the optical properties of the heterostructure which can be externally. modulated to.make, for example, electro-optic devices. They can also cause charge accumulation which can be used in field effect transistor and resonant tunneling structures."
}
@article{Pavesi1997717,
title = "Photoluminescence investigation of Si-doped GaAs grown by molecular beam epitaxy on non-(100) oriented surfaces",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "717 - 726",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00109-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001097",
author = "L. Pavesi and M. Henini",
abstract = "The photoluminescence of Si-doped GaAs grown by molecular beam epitaxy on non-(100) oriented surfaces will be presented and reviewed. Particular care will be paid to show how photoluminescence can help the understanding of the behaviour of the dopants, unwanted impurities and point defects in differently oriented samples. Low temperature continuous-wave and time resolved luminescence data will be presented of (100), (111)A, (111)B, (211)A., (311)A, (311)B and (110) oriented samples with different doping levels."
}
@article{Mayo1997727,
title = "High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "727 - 734",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00110-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001103",
author = "E. Mayo and S.A. Dickey and A. Majerfeld and A. Sanz-Hervás and B.W. Kim",
abstract = "Growth of GaAs and AlGaAs epitaxial layers on both (111)A and (111)13 faces of GaAs substrates was studied by the atmospheric metalorganic vapor phase epitaxy (MOVPE) technique. We show that GaAs and AlGaAs layers with excellent surface quality can be grown at relatively low temperatures and V/III ratios (600°C, 15) on the (111)A face, whereas for layers on the (111)13 face a higher growth temperature (720°C) was required. GaAs/AlGaAs quantum well (QW) structures were successfully grown for the first time on the (111)A GaAs face by the MOVPE technique. The effects of various growth conditions on the surface morphology of the epilayers were studied. For the (111)A surface a wide growth window with temperatures in the range 600°-660°C and V/III ratios varying from 15 to 45 was established for obtaining excellent surface morphology. The properties of the QWs were investigated by high resolution X-ray diffractometry, photoluminenscence and photoreflectance measurements. These measurements indicate that the QWs are of very high structural and optical quality."
}
@article{Ballet1997735,
title = "Optical investigation of piezoelectric field effects on excitonic properties in (111)B-grown (In, Ga)As/GaAs quantum wells",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "735 - 741",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00111-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001115",
author = "P. Ballet and P. Disseix and A. Vasson and A.-. Vasson and R. Grey",
abstract = "The excitonic properties in two (111)B-grown In0·15Ga0·85As/GaAs multiple quantum well p-i-n diodes are investigated by thermally-detected optical absorption and electroreflectance rneasurements. The lineshape of the electroreflectance spectra is analysed by means of a multilayer model enabling the energies and the oscillator strengths of excitonic transitions to be deduced. The excitonic characteristic values are calculated by using a variational method. The determination of the variation of the binding energy with in-well field leads to an accurate value of the piezoelectric field in the InGaAs layers. The theoretical oscillator strengths are compared to those obtained from electroreflectance for different excitonic transitions."
}
@article{Sano1997743,
title = "Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "743 - 747",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00112-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001127",
author = "Eriko Sano and Yoshiro Hirayama and Yoshiji Horikoshi",
abstract = "Using elementary Se we grew Se-doped GaAs films on GaAs (111), (411), (711) and (100) substrates by molecular beam epitaxy. The films grown on all the high-index substrates showed n-type conduction and the maximum carrier concentration reached 2.1 × 1019 cm−3 for the film grown on the (411)B substrate. The carrier concentration began to saturate at a Se concentration near 1019 cm−3 but continued to increase up to a Se concentration of 2 × 1020 cm−3. Above 2 × 1020 cm−3 Se concentration, slow reduction of the carrier concentration was observed. We obtained excellent surface morphology when n-type GaAs films were grown on (411)A and (711)B substrates even at a Se concentration of 7 × 1020 cm−3."
}
@article{Vaccaro1997749,
title = "Piezoelectricity and carrier dynamics in In0·2Ga0·8As/GaAs single quantum wells grown on (n11)A-oriented GaAs (n=1, 2, 3)",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "749 - 755",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00113-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001139",
author = "Pablo O. Vaccaro and Kazuhisa Fujita and Toshihide Watanabe",
abstract = "Temporal variations of the photoluminescence (PL) peak wavelength due to screening of the piezoelectric field by photogenerated carriers are observed in ln0·2Ga0·8As/GaAs single quantum wells grown on (n11)A-oriented substrates (n=1, 2, 3) by using time-resolved PL spectroscopy. The partial screening of the piezoelectric field shifts the PL peak to shorter wavelengths. The subsequent decrease of the photogenerated carriers by recombination produces a redshift of the PL peak, which is explained using a model that fits successfully the experimental results."
}
@article{Valtueña1997757,
title = "Memory effects on piezoelectric InGaAs/GaAs MQW PIN diodes",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "757 - 765",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00114-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001140",
author = "J.F. Valtueña and I. Izpura and J.L. Sánchez-Rojas and E. Muñoz and E.A. Khoo and J.P.R. David and J. Woodhead and R. Grey and G.J. Rees",
abstract = "Charge accumulation erects in piezoelectric multiple quantum well (MQW) InGaAs/GaAs PIN diodes grown on (111)B GaAs substrates have been studied regarding memory applications. Strain-induced piezoelectric fields allow new PIN structures with configurations of negative average electric field (NAF) active region. These new devices can store an electric dipole with spatially separated electrons and holes that have low recombination probability and thus long lifetimes. This produces a longrange screening of the field in the active region and hence a strong blue shift of the absorption band edge (maximum light transmission for reading purposes). Both a light pulse and a forward voltage pulse are able to create the dipole (data writing or charged device). The stored dipole can be removed by a reverse electrical pulse (data erasing or device discharge), resulting in a minimum light transmission across the device. Capacitance voltage and time resolved capacitance measurements, after single optical or electrical charging pulse at low temperature (20 K) have been used to determine the stored dipole behaviour. Capacitance transients analysis allowed study of the kinetics of the discharge process, which shows a non-exponential behaviour with storage times up to 103 sec, suggesting very long time refresh cycles. Time resolved photocurrent has been used to check read and write capabilities giving on-off ratios up to 30."
}
@article{SánchezRojas1997767,
title = "Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "767 - 775",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00115-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001152",
author = "J.L. Sánchez-Rojas and A. Sacedón and J.F. Vlaltueña and A. Sanz-Hervás and I. Izpura and E. Calleja and E. Muñoz and E.J. Abril and M. Aguilar",
abstract = "We show that charge accumulation in piezoelectric [111]-oriented multiple quantum wells (MQWs), with average electric fields opposing the field in the barriers, inhibits the shift of optical transitions by externally applied electric fields. This effect is due to the screening of the average electric field as photogenerated electrons and holes drift towards the opposite edges in the MQW region due to this average field. The resulting dipole flattens the envelope potential and hence precludes the change of energy levels with variations of external voltage. This behavior has been observed in different device configurations employing InGaAs/GaAs MQW embedded in a p-i-n diode by low temperature photoluminescence (PL) and photocapacitance spectroscopies under different bias conditions. In addition to these ‘self-locked’ transitions we also observed other peaks in the PL spectra related to the charge accumulation effect and that are qualitatively explained using Hartree calculations."
}
@article{SanzHervás1997777,
title = "Application of high-resolution X-ray diffractornetry to the structural study of epitaxial multilayers on novel index surfaces",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "777 - 784",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00116-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001164",
author = "A. Sanz-Hervás and M. Garrido and M. Aguilar and A. Sacedón and J.L. Sánchez-Rojas and E. Calleja and E. Muñoz and C. Villar and E.J. Abril and M. López",
abstract = "The applicability of high-resolution X-ray diffractometry (HRXRD) to the structural characterization of epitaxial structures on arbitrarily oriented surfaces is shown. This technique was used to study piezoelectric InGaAs/GaAs multiquantum well and superlattice p-i-n photodiodes grown on (001) and (111)B GaAs. The structural information obtained by HRXRD was important for understanding the optoelectronic behaviour of the diodes, since the strain-induced piezoelectric field strongly affected their characteristics. The interpretation of the HRXRD experiments was possible thanks to a simulation model developed in our laboratory which allows the calculation of any symmetric or asymmetric reflection on an arbitrarily oriented substrate. We also show some examples of the asymmetric distortion of the strained unit cells owning to the substrate misorientation."
}
@article{Colson1997785,
title = "Critical thickness and relaxation of (111) oriented strained epitaxial layers",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "785 - 794",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00117-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001176",
author = "H.G. Colson and P. Kidd and D.J. Dunstan",
abstract = "Growth on the <111> orientation brings with it new possibilities for nucleation and multiplication mechanisms for misfit relieving defects in epitaxial layers. Yet, despite these changes, the macroscopic relaxation behaviour of good quality InxGa1−xAs layers on <111> GaAs is remarkably similar to the relaxation behaviour of 〈001〉 oriented layers. Using high resolution X-ray diffraction, we present the full analysis of <111> oriented strained InxGa1−xAs layers showing the optimum data handling to derive strain and misfit. Data from partially relaxed layers are presented and compared with theoretical equilibrium critical thickness for the <111> orientation. We find that there is excellent agreement between the experimental data and the theory."
}
@article{Simmons1997795,
title = "The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "795 - 801",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00118-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001188",
author = "M.Y. Simmons and A.R. Hamilton and A. Kurobe and S.J. Stevens and D.A. Ritchie and M. Pepper",
abstract = "This paper reports the fabrication of an in situ back-gated hole gas on the (311)A surface of GaAs. The hole density can be varied from fully depleted to ps = 2.1 × 1011 cm−2 with mobilities of up to μ = 1.1 × 106 cm2V−1 s−1. It is seen that for carrier densities down to ps = 4 × 1010 cm−2 the mobility in the [233] direction is greater than that in the [011] direction. Using a combination of front- and back-gates we are able to keep the carrier density constant and deform the hole gas wavefunction such that the holes are pushed up against or moved further away from the heterointerface. Thus we are able to separately investigate the various scattering mechanisms that determine the mobility, and compare the experimental data with theoretical calculations based on the shape of the wavefunction."
}
@article{Heinecke1997803,
title = "Facet formation and characterization of III–V structures grown on patterned surfaces",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "803 - 815",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00119-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929600119X",
author = "H. Heinecke and M. Wachter and U. Schöffel",
abstract = "In selective area growth there is a lateral transition from growth to non-growth areas. At this point the growth is determined by the lowest growing crystal planes. This review summarizes the mechanisms during the facet formation in the InP/GaInAsP material system with respect to the growth conditions in metalorganic molecular beam epitaxy. The effect of interfacet diffusion and the anisotropic surface diffusion process as well as the molecular beam flux density at the facets is discussed. Planar selective area epitaxy (SAE), where the facets can evolve freely, is selected as the starting point. Low lateral growth rates at side wall (011) planes of the structure are achieved under perpendicular molecular beam geometry. The results are transferred to embedded SAE for the lateral coupling of heterostructures having constant material compositions up to the lateral contact. Applications for SAE-grown waveguides and laser-waveguide integration are presented."
}
@article{Pfeiffer1997817,
title = "Transport and optics in quantum wires fabricated by MBE overgrowth on the (110) cleaved edge",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "817 - 823",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00120-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001206",
author = "L. Pfeiffer and A. Yacoby and H.L. Stormer and K.L. Baldwin and J. Hasen and A. Pinczuk and W. Wegscheider and K.W. West",
abstract = "The MBE double-growth technique that we call cleaved-edge overgrowth has, over the past several years, proved itself to be especially suitable for making quantum wires of the very highest quality. We will review our recent progress in measuring the transport and quantum optics characteristics of these wires, and the MBE growth issues that arise with cleaved-edge overgrowth fabrication. Our transport experiments have resulted in 250 Å wide quantum wires with ballistic mean free paths exceeding 10 μm. We verify the prediction that in the ballistic regime the electron conductivity in a quantum wire is independent of the wire length and shows quantized steps proportional to e2h. The deviation of our observed step heights from exactly e2h is taken as evidence for correlated electron behaviour. The electrons are tightly confined on three sides by atomically smooth GaAs/AlGaAs heterojunctions and in the fourth direction by an electric field. This results in a quantum wire of nominal square cross-section 250 × 250 Å. Magneto-transport measurements reveal quantum wire sub-band separations in excess of 20 meV as well as the symmetries of the wave functions of the one-dimensional modes. For optics studies our quantum wires are made using cleaved-edge overgrowth to form a line junction as two quantum wells are made to intersect with the cross-section forming a letter ‘T’. This line intersection separately forms a quantum wire bound-state for holes, for electrons, and even for excitons. We have characterized our optical wires by PL, by PLE, and by scanning near-field optics. An important application of this work is our demonstration of the first quantum laser using this T-geometry."
}
@article{Yamaguchi1997825,
title = "RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "825 - 831",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00121-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001218",
author = "H. Yamaguchi and J.G. Belk and X.M. Zhang and J.L. Sudijono and M.R. Fahy and T.S. Jones and B.A. Joyce",
abstract = "Reflection high-energy electron diffraction and scanning tunneling microscopy have been used to study the growth of InAs on GaAs (111)A by molecular beam epitaxy. In contrast to the 3-D growth mode observed for InAs on GaAs (001), there is no evidence for 3-D island formation on the (111)A surface. The precise control of the 2-D growth of InAs layers makes it possible to probe the early stages of strain relaxation by imaging misfit dislocations by STM. The band gap and position of the surface Fermi level of ultra-thin InAs films on GaAs (111)A have also been obtained by scanning tunneling spectroscopy as a function of InAs thickness. The band gap of InAs is established after about 10 MLs of InAs and an accumulation layer is formed at the surface after the growth of 20 MLs of InAs."
}
@article{Tok1997833,
title = "Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "833 - 839",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00122-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929600122X",
author = "E.S. Tok and J.H. Neave and M.R. Fahy and F.E. Allegretti and J. Zhang and T.S. Jones and B.A. Joyce",
abstract = "We have studied the relationship between the arsenic incorporation kinetics and the surface morphology and Si doping behaviour in GaAs(110) films grown by molecular beam epitaxy (MBE). The homoepitaxial growth of GaAs(110) requires low substrate temperatures and high As/Ga flux ratios to obtain films with good surface morphology, and under these conditions Si doped layers exhibit n-type behaviour. At higher growth temperatures and lower As/Ga flux ratios, the epitaxial films are highly faceted and the Si doped layers are p-type. We show that this growth related site switching behaviour and variation in surface morphology is due to a decrease in the As coverage arising from a small and temperature dependent incorporation coefficient of arsenic on this surface."
}
@article{Wachter1997841,
title = "Anisotropic surface diffusion at crystal facet transitions during localized GaInAsP growth by MOMBE",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "841 - 848",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00123-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001231",
author = "M. Wachter and C. Menke and H. Heinecke",
abstract = "Localized grown InP/GaInAs(P) heterostructure ridges by selective area metalorganic molecular beam epitaxy (MOMBE) are investigated concerning the surface diffusion. The structures have different crystal facets at the semiconductor mask transition area. The surface diffusion processes between these simultaneously growing facets are a function of the step density, which is preset by the selected substrate misorientations. The anisotropic surface diffusion in the direction of the group V terminated surface steps determines the lateral facet growth and leads to a fine oscillating surface corrugation on the ridge surface only near the step upwards oriented facet transition. A simulation of this anisotropic surface corrugation by a deterministic nonlinear partial differential equation of a one dimensional diffusion model for the selective area growth in MOMBE presents a good agreement with the measured corrugation depth and periods."
}
@article{Nlarschner1997849,
title = "Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "849 - 855",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00124-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001243",
author = "T. Nlarschner and F.D. Tichelaar and M.R. Leys and R.T.H. Rongen and C.A. Verschuren and H. Vonk and J.H. Wolter",
abstract = "We present a study of changes in the layer morphology of tensilely strained GalnAs/InP multiple quantum well (MQW) structures in dependence on strain and substrate off-orientation. Growth was performed by chemical beam epitaxy (CBE). For high tensile strain (xGa=0.77) lateral thickness fluctuations evolving into facets of the (411)A type are observed in cross-sectional transmission electron microscopy (TEM). These undulations are parallel to [011] and present for samples grown on both exactly oriented and off-oriented (100) InP substrates. For off oriented substrates the strain induced generation of macrosteps parallel to the surface steps is detected for xGa = 0.65 and xGa=0.77. The distance and height of the macrosteps directly correspond to the substrate off orientation angle. While the macrostep generation is a direct consequence of surface steps in combination with strain, the occurrence of the undulations might be connected with the (2 × 4) surface reconstruction during CBE growth. Both mechanisms are discussed with respect to experimental and theoretical literature data."
}
@article{Ponchet1997857,
title = "InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics",
journal = "Microelectronics Journal",
volume = "28",
number = "8–10",
pages = "857 - 863",
year = "1997",
note = "Novel Index Semiconductor Surfaces: Growth, Characterization and Devices",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00125-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001255",
author = "A. Ponchet and A. Rocher and A. Ougazzaden and A. Mircea",
abstract = "Zero-net strained multilayers alternating GalnP and InAsP with lattice mismatches with InP of −1% and 1% respectively have been grown by Metallo-Organic Vapour Phase Epitaxy and examined by Transmission Electron Microscopy. Different substrate orientations were used, inducing different growth morphologies. On (001) and (113)B substrates, the GalnP and InAsP layers were laterally modulated, forming vertical stripes parallel to the [110] and [332] directions respectively. This could be related to the surface reconstruction (group V element dimerisation), which favours islands built with facets of A type (gallium steps) rather than with facets of B type (arsenic steps). On a (110) vicinal substrate (misorientation of 3° towards (111)B), a step bunching phenomenon was observed."
}
@article{tagkey1997i,
title = "News and features in device applications, processes, and materials, being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "i - xxiv",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90009-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900094",
key = "tagkey1997i"
}
@article{Soliman1997609,
title = "Computer design and analysis of relaxation oscillator circuits applying unijunction transistors",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "609 - 616",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00153-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929600153X",
author = "F.A.S. Soliman and S.A. Kamh and F. Al-Esawey and U.A. El-senosi",
abstract = "Performance data for unijunction transistor devices and their applications as oscillator circuits operate at normal and elevated temperature levels (up to 140°C) as well as in nuclear radiation environments (up to 1000 Mrad) are presented either experimentally or theoretically. Different computer programs are suggested to solve the general equations for the relaxation oscillators' design and analysis and to introduce the operating conditions, temperature and nuclear radiation effects on their performance. It was found that the experimental and calculated data are in close agreement."
}
@article{Mitin1997617,
title = "All-purpose technology of physical sensors on the base of Ge/GaAs heterostructures",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "617 - 625",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00103-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001036",
author = "V.F. Mitin and Yu.A. Tkhorik and E.F. Venger",
abstract = "This work is devoted to development of the basic principles of designing sensors on the base of Ge/GaAs heterostructures. The Ge films grown on semi-insulating GaAs substrates may be used as a universal sensitive material for manufacturing various physical sensors. The possibility of manufacturing photodetectors and temperature, strain and Hall sensors was demonstrated. In the case of Ge films on GaAs, realization of a wide variety of electrical properties needed for sensor design can be achieved by controllable autodoping of Ge films. This is caused by high diffusion of Ga and As atoms from the substrate into a growing film. The technology of sensor manufacturing developed by us is an all-purpose one. It allows one to produce various sensors in a unified technological process."
}
@article{Mahmoud1997627,
title = "Generation of CMOS voltage-controlled floating resistors",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "627 - 640",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00106-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001061",
author = "Soliman A. Mahmoud and Hassan O. Elwan and Ahmed M. Soliman",
abstract = "A new generation method to implement CMOS floating resistors is presented. The generation method depends on the linearization of the differential current of two matched NMOS transistors in two alternative configurations. The CMOS floating resistors implemented are based on using MOS transistors operating; in the saturation region with their sources connected to their substrates. New CMOS floating resistors using the proposed design method are given. The magnitude of each of the proposed CMOS floating resistors is tuned by a control voltage. PSpice simulation results of the new proposed CMOS floating resistors indicating the linearity range are also given"
}
@article{GómezAlbarrán1997641,
title = "A routing strategy based on genetic algorithms",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "641 - 656",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00150-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296001504",
author = "Made las Mercedes Gómez-Albarrán and Ana Ma Fernández-Pampillón-Cesteros and Juan Manuel Sánchez-Pérez",
abstract = "Circuit routing is a problem of searching the shortest path and it is solved using high complexity algorithms. The time and space requirements of these algorithms depend linearly on search space. Genetic algorithms (GAs) are tough algorithms of adaptive search that have proved to be an efficient tool in optimization and complex search processes. The goal of our work is to improve a classical routing algorithm (Lee's algorithm) using a GA. This GA helps to reduce Lee's algorithm search space and, as a consequence, the spatial and temporal complexities of Lee's algorithm have been reduced. The algorithm we propose, GALO (genetic algorithm for Lee's algorithm optimization), is the combination of our GA and Lee's algorithm. GALO obtains, if it exists, the shortest path between the circuit nodes that we are interconnecting, while overcoming the GAs drawback: finding quasi-solutions. We have accomplished a theoretical study of the worst case temporal complexity of our GA and GALO, having three main goals: first, comparing the complexity of our solution with the Lee's classical solution complexity; second, noticing the relevance that this study has in designing and debugging genetic algorithms; and finally, comparing theoretical and experimental results through several examples."
}
@article{Baldi1997657,
title = "A scalable single poly EEPROM cell for embedded memory applications",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "657 - 661",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00001-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000013",
author = "L. Baldi and A. Cascella and B. Vajana",
abstract = "An increasing number of integrated circuits requires the embedding of a limited amount (up to 16–64 kbits) of EEPROM memory. For this application, low process complexity, robust structure and good reliability are more important than small cell size. In this paper we present the design and characterization of a single poly EEPROM cell, optimized for embedded applications, and characterized by a good shrink potential. A. cell area of 68.7 μ2 has been obtained in 0.7 μm technology, and electrical characterization has shown the possibility of achieving a programming time of less than 1 msec, while an endurance of more than 10 million cycles has been achieved at 125°C, with a programming time of 2 msec. By further shrink of the same basic layout, cell areas of 55 and 44μm2 have been obtained, and similar programming and endurance performances have been demonstrated."
}
@article{Ismaeel1997663,
title = "Modeling and testing for stuck faults in BiCMOS combinational circuits",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "663 - 681",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00008-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000086",
author = "Asad A. Ismaeel and Rakesh Bhatnagar",
abstract = "A transistor level model and a testing methodology are presented for BiCMOS circuits. The model fully describes the functional (logical) and parametric behavior of the BiCMOS circuits in the presence of transistor stuck faults. The model employs the logic transistor function (LTF). The LTF describes the circuit in terms of its input variables and transistor topology. The model assumes four logic values: 0, 1, M and I, where M and I imply a memory and an indeterminate element, respectively. The faults in BiCMOS circuits may affect the logic level at the output or the parameters of the circuit. The circuits are normally tested at the parametric level by IDDQ (steady state power supply current) testing or by timing testing. The LTF model is utilized to generate the test vectors for both the functional testing and the parametric testing. Simulation is performed using hspice to support the results."
}
@article{Oudjida1997683,
title = "A reconfigurable counter controller for digital motion control applications",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "683 - 690",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00009-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000098",
author = "Abdelkrim K. Oudjida and Youssef I. EI-Haffaf and Samir Tagzout and Issameddine Hamani and Brahim Bouzouia and Khaled Kara",
abstract = "This paper demonstrates that counter controllers, whatever their functional, performance and density requirements, can be implemented using the same flexible architecture. As applications, two counter controllers, a quadrature decoder for closed-loop-motion control systems and a moving-object counter controller, are implemented on Xilinx's FPGA packages."
}
@article{Clifton1997691,
title = "Sub-micron strained Si:SiGe heterostructure MOSFETs",
journal = "Microelectronics Journal",
volume = "28",
number = "6–7",
pages = "691 - 701",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)00007-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297000074",
author = "P.A. Clifton and S.J. Lavelle and A.G. O'Neill",
abstract = "Si:SiGe heteroepitaxy raises the prospect of combining the attributes of high mobility channel engineering with mainstream stricon MOS technology. The design of the heteroepitaxial structure is investigated here by means of a response surface methodology study of strained SiGe p-channel heterostructure MOSFETs using two-dimensional numerical device simulation. The reduced effective density of states inherent in a strained channel layer is included and shown to result in a lower inversion charge concentration in the channel. Particular performance metrics evaluated are the gate bias range for buried channel operation and the maximum channel charge, which determines the peak transconductance (gm) and maximum current drive. It is shown that at the high levels of sub-channel doping appropriate for MOSFETs with sub-micron channel lengths, a small or non-existent window of buried channel operation may arise due to the onset of parasitic surface inversion. Various means of increasing the contribution of strained channel conduction to the drain current are considered, including composition grading and modulation doping. The conclusions are equally applicable to strained silicon n-channel heterostructure MOSFETs."
}
@article{tagkey1997i,
title = "News and features in device applications, processes, and materials, being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "i - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90116-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297901166",
key = "tagkey1997i"
}
@article{tagkey1997ii,
title = "Market for II–VI materials poised for 9% growth",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "ii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80965-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809652",
key = "tagkey1997ii"
}
@article{tagkey1997ii,
title = "Spire research contracts for lasers",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "ii - iii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80966-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809664",
key = "tagkey1997ii"
}
@article{tagkey1997iii,
title = "Wells Open Top burn in sockets for BGA",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80967-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809676",
key = "tagkey1997iii"
}
@article{tagkey1997iv,
title = "Voltaix appoints Aldrich",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "iv - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80971-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809718",
key = "tagkey1997iv"
}
@article{tagkey1997iv,
title = "Vitesse 2.5 Gb/s laser driver",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "iv - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80970-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809706",
key = "tagkey1997iv"
}
@article{tagkey1997iv,
title = "Second solkatronic arsine plant",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "iv - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80968-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809688",
key = "tagkey1997iv"
}
@article{tagkey1997iv,
title = "SLI licenses UHB laser",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "iv - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80969-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929780969X",
key = "tagkey1997iv"
}
@article{tagkey1997v,
title = "Mikron calibratiors check IR sensor accuracy",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "v - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80973-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809731",
key = "tagkey1997v"
}
@article{tagkey1997v,
title = "Epichem MO in MA",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "v - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80972-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929780972X",
key = "tagkey1997v"
}
@article{tagkey1997vi,
title = "Hitachi first single chip microcontroller based on SH-DSP core",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "vi - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80976-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809767",
key = "tagkey1997vi"
}
@article{tagkey1997vi,
title = "Temptronic ThermoChuck meets standards",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "vi - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80975-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809755",
key = "tagkey1997vi"
}
@article{tagkey1997vi,
title = "SMT power film resistors in D-PAK",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "vi - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80974-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809743",
key = "tagkey1997vi"
}
@article{tagkey1997vii,
title = "Syfer helps RACAL design filter for mil-spec",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "vii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80978-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809780",
key = "tagkey1997vii"
}
@article{tagkey1997vii,
title = "Balzers launch web site",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "vii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80977-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809779",
key = "tagkey1997vii"
}
@article{Rich1997viii,
title = "Navigating the programmable logic landscape",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "viii - xiii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80979-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809792",
author = "Rich and Kapusta"
}
@article{Richard1997xiv,
title = "Materials jetting technology — MPM breakthrough in solder deposition for ultra-fine pitch",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "xiv - xviii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90117-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297901178",
author = "Richard and Booth"
}
@article{David1997xix,
title = "New 1200 V integrated circuit simplifies design of three-phsae motor-drive inverters",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "xix - xxiv",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)80980-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297809809",
author = "David and Tam"
}
@article{Soliman1997519,
title = "Radiation and temperature effects on the operation of microwave active filters",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "519 - 526",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00091-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000912",
author = "F.A.S. Soliman and I.A. EI-Shahat and A.S.S. AI-Kabbani and F.M. Farag",
abstract = "A methodology for computer-simulated design of active microwave filters, either all- or band-pass ones, was shown previously (I.A. El-Shahat and co-workers, Int. AMSE Conf., Rabat, Morocco, Vol. 1, Oct. 1995, pp. 265–274; Microwaves RFJ. (Nov. 1995; (in press)). In this paper, we illustrate the effects of radiation and temperature on the operation of such filters. In general, gamma-exposure of the GaAs FETs (MESFETs) up to 80 Mrads leads the gain of the filters to decrease. In the ideal and optimal cases of both filters the decrease of gain is negligible. Also, when the device temperature increases from -50 to 150°C, the gain is decreased in both cases; ideal and optimal."
}
@article{WenShiung1997527,
title = "Multi-step doped-channel camel-gate FETs with a linear and enhanced transconductance",
journal = "Microelectronics Journal",
volume = "28",
number = "5",
pages = "527 - 531",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00095-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929600095X",
author = "Wen-Shiung and Lour",
abstract = "We report on the linear and enhanced transconductance by multi-step doped channel camel-gate field-effect transistors (CAMFETs) as compared with conventional CAMFETs. A low-doped layer along with the n+ and p+ layers is used to form a high-performance camel diode, which exhibits a large potential barrier so as not to drop rapidly. The measured barrier height is greater than 1.0 V. The measured gate-to-drain breakdown voltage at 1 mA/mm of gate current is about −21 V, whereas the rest layers doped heavily are used to enhance the transconductance and to improve the device linearity. A 1.5 x 100 μm2 device has a peak transconductance of 220 mS/mm and a current density larger than 800 mA/mm. Furthermore, the device has a transconductance more than the peak value 80% over a wide drain current range from 160 to 800 mA/mm. The improvement of device linearity and the enhancement of current density suggest that the multi-step doped-channel F FETs are very promising far high power large signal circuit applications."
}
@article{T1997i,
title = "Innovative scanning prove microscopy from Oxford Instruments",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "i - iv",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84510-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845107",
author = "T. and Warwick",
abstract = "WA Technology launched the first commercial STM in 1985, at the time of the announcement of the Binnig/ Rohrer Nobel prize, and over the last ten years have developed innovative SPM systems ideally suited to a range of applications. Recently incorporated into Oxford Instruments, the company is now poised to improve further their range of products and services to researchers in SPM."
}
@article{Alan1997v,
title = "Tools for nanolithography — accessible for all!",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "v - viii",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84511-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845119",
author = "Alan and Bullock"
}
@article{Hussla1997ix,
title = "IZET innovationszentrurn itzehoe: Transfer, entrepreneurship and innovations based on micro-technologies",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "ix - xiv",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84512-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845120",
author = "Ingo Hussla and Rainer Felten",
abstract = "The industrial impact and markets of nano- and microtechnology based products are sketched and the possible role and new instruments of technology transfer promoters are discussed. The chances, risks and facts connected with microtechnology take-up by small and medium sized companies reveal the need to improve support and mechanisms of technology transfer. A new approach to overcome the hurdles and to stimulate technology take-up in a pro-active manner carried out by IZET is described."
}
@article{tagkey1997xv,
title = "News and features in device applications, processes, and materials, being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xv - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84513-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845132",
key = "tagkey1997xv"
}
@article{tagkey1997xvi,
title = "High speed BGA inspection",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xvi - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84514-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845144",
key = "tagkey1997xvi"
}
@article{tagkey1997xvi,
title = "Fairchild up for sale",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xvi - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/0026-2692(97)90027-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269297900276",
key = "tagkey1997xvi"
}
@article{tagkey1997xvi,
title = "ASM's vertical furnace market",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xvi - xvii",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90028-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900288",
key = "tagkey1997xvi"
}
@article{tagkey1997xvii,
title = "Philips handheld PC chip",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xvii - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90029-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929790029X",
key = "tagkey1997xvii"
}
@article{tagkey1997xviii,
title = "Ion Systems installs ionizers in Singapore",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xviii - xix",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90033-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900331",
key = "tagkey1997xviii"
}
@article{tagkey1997xviii,
title = "IBM patent champs",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xviii - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90030-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900306",
key = "tagkey1997xviii"
}
@article{tagkey1997xviii,
title = "Clean room clothing",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xviii - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90032-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929790032X",
key = "tagkey1997xviii"
}
@article{tagkey1997xviii,
title = "Contamination of process chemicals",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xviii - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90031-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900318",
key = "tagkey1997xviii"
}
@article{tagkey1997xix,
title = "BGA lead scanner",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xix - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90034-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900343",
key = "tagkey1997xix"
}
@article{tagkey1997xix,
title = "Joint venture of air products and denko",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xix - xx",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90035-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900355",
key = "tagkey1997xix"
}
@article{tagkey1997xx,
title = "ATG Cygnet launches a 16 Gigabyte drive",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xx - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90036-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900367",
key = "tagkey1997xx"
}
@article{tagkey1997xx,
title = "Laser optics measures film thickness",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xx - xxi",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90037-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900379",
key = "tagkey1997xx"
}
@article{tagkey1997xxi,
title = "BOC gas contract",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xxi - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90038-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900380",
key = "tagkey1997xxi"
}
@article{tagkey1997xxi,
title = "Hybrid smart card reader",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xxi - ",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)90039-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297900392",
key = "tagkey1997xxi"
}
@article{tagkey1997xxii,
title = "Microchip: PIC17C756 8-bit OTP micro-controller with 10-bit A/D Converter",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xxii - xxiii",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84515-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845156",
key = "tagkey1997xxii"
}
@article{tagkey1997xxiv,
title = "A Guide to using Field Programmable Gate Arrays for Application-Specific Digital Signal Processing Performance",
journal = "Microelectronics Journal",
volume = "28",
number = "4",
pages = "xxiv - xxxv",
year = "1997",
note = "LDSD: Micro- and Nano-technology",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84516-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297845168",
key = "tagkey1997xxiv"
}
@article{Keith1997i,
title = "Editorial: KGD, MCMs and parasitics",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "i - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84849-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848495",
author = "Keith and Gurnett"
}
@article{tagkey1997ii,
title = "Taxis by satellite",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "ii - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84850-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848501",
key = "tagkey1997ii"
}
@article{tagkey1997ii,
title = "New backside technology breaks inspectability barrier for high speed devices",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "ii - iii",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84851-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848513",
key = "tagkey1997ii"
}
@article{tagkey1997iii,
title = "Philips new fab MOS4YOU",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "iii - iv",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84852-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848525",
key = "tagkey1997iii"
}
@article{tagkey1997iv,
title = "SRDC acquires Metaphase Technology Inc.",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "iv - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84854-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848549",
key = "tagkey1997iv"
}
@article{tagkey1997iv,
title = "ASM Lithography (ASML) and IMEC launch joint development program in 193-nm-wavelength deep UV lithographic technology",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "iv - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84853-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848537",
key = "tagkey1997iv"
}
@article{tagkey1997v,
title = "Cypress introduces the first deep synchronous FIFO to industry standard pinouts",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "v - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84855-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848550",
key = "tagkey1997v"
}
@article{tagkey1997v,
title = "Two new contracts for Cognex",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "v - vi",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84856-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848562",
key = "tagkey1997v"
}
@article{tagkey1997vi,
title = "New ControlVision TMCTM controls software available for the Marathon series of cluster tool automation platforms",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "vi - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84857-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848574",
key = "tagkey1997vi"
}
@article{tagkey1997vii,
title = "Beating vibration problems in a clean room environment",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "vii - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84859-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848598",
key = "tagkey1997vii"
}
@article{tagkey1997vii,
title = "IBM Paris chooses Edwards for 16MB line",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "vii - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84858-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848586",
key = "tagkey1997vii"
}
@article{tagkey1997viii,
title = "Daimler-Benz heterostructural bipolar transistors",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "viii - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84860-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848604",
key = "tagkey1997viii"
}
@article{tagkey1997ix,
title = "New applications of advanced thin film measurement by Spectroscopic Ellipsometry",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "ix - xii",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84861-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848616",
key = "tagkey1997ix"
}
@article{tagkey1997xiii,
title = "Philips continues to pioneer USB technology with the launch of the USB hub IC",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "xiii - xiv",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84862-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848628",
key = "tagkey1997xiii"
}
@article{tagkey1997xv,
title = "CoWare nv, IMEC's spin-off company,plans to bring higher levels of design productivity to the emerging system-on-silicon market",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "xv - xvi",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84863-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929784863X",
key = "tagkey1997xv"
}
@article{tagkey1997xvii,
title = "Data visualization software helps engineers and scientists be more productive",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "xvii - xviii",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84864-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848641",
key = "tagkey1997xvii"
}
@article{tagkey1997xix,
title = "The SLAN - A new microwave plasma source",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "xix - xxiii",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84865-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848653",
key = "tagkey1997xix"
}
@article{tagkey1997xxiv,
title = "Deep Si etch with ICP cryo-RIE",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "xxiv - ",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)84866-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297848665",
key = "tagkey1997xxiv"
}
@article{Székely1997205,
title = "Thermal investigations of ICs and microstructures",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "205 - 207",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00024-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000249",
author = "V. Székely and M. Rencz and B. Courtois"
}
@article{Blanchard1997209,
title = "An interactive and integrated thermal characterization of component placement on a printed circuit board",
journal = "Microelectronics Journal",
volume = "28",
number = "3",
pages = "209 - 219",
year = "1997",
note = "Thermal Investigations of ICs and Microstructures",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00025-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000250",
author = "Jean-Louis Blanchard and Sophie Louage",
abstract = "This article deals with a tool integrated in a floorplanning environment for the fast thermal characterization of the component placement on a printed circuit board. The algorithm based on Fourier series expansion and on the superposition principle is designed to outline interactively the impact of a new placement on the board hot spots. The ease of use is reinforced by a heat transfer coefficient advisor assisting the user in the specification of boundary conditions. A discussion of the tool accuracy based on comparisons with experimental measurements is included, in order to outline the role played by the modelling of operating conditions and by the component representation."
}
@article{Keith1997i,
title = "News and updates in device application, process and materials being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "i - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83466-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834660",
author = "Keith and Gurnett"
}
@article{tagkey1997ii,
title = "klduo;Microelectronics in business” now extended to 1998",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "ii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83467-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834672",
key = "tagkey1997ii"
}
@article{tagkey1997ii,
title = "‘PACE’ project on target",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "ii - iii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83468-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834684",
key = "tagkey1997ii"
}
@article{tagkey1997iii,
title = "Fluoroware introduces magnaflo",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83470-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834702",
key = "tagkey1997iii"
}
@article{tagkey1997iii,
title = "The powercore is force computers next generation power-pc: based VMEbus computer product",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83469-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834696",
key = "tagkey1997iii"
}
@article{tagkey1997iii,
title = "Veeco claims a 300,000-fold reduction in defects in multilayer thin films",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "iii - iv",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83471-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834714",
key = "tagkey1997iii"
}
@article{tagkey1997iv,
title = "Ultratech stepper achieves ISO 9001",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "iv - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83472-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834726",
key = "tagkey1997iv"
}
@article{tagkey1997iv,
title = "New coating technology enables superior gap fill and planarization",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "iv - v",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83473-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834738",
key = "tagkey1997iv"
}
@article{tagkey1997v,
title = "Surface interface's 300 mm wafer capability",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "v - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83474-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929783474X",
key = "tagkey1997v"
}
@article{tagkey1997vi,
title = "Water-based metal pastes",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "vi - vii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83475-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834751",
key = "tagkey1997vi"
}
@article{RaymondA1997viii,
title = "Fab 6 pipeline constraint management implementation at Harris Semiconductor Corp.",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "viii - ix",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83476-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834763",
author = "Raymond A. and Rerick",
abstract = "This article presents the implementation of a Drum-Buffer-Rope system within the Harris Semi-conductor's Mountaintop wafer facility, utilizing Theory of Constraint Techniques, coupled with Consilium's WorkStream manufacturing execution systems(MES) software. These techniques, de-scribed in the book entitled, “The Goal” written by Dr. Eli Goldratt, focus on constraint management and cause-effect relationships. The components of a Drum-Buffer-Rope system will be explained, including the relationships of throughput and inventory. Self-managed work teams at Harris Semiconductor utilize these techniques to ensure continuous improvement and customer satisfaction."
}
@article{B1997x,
title = "Sub-half-micron contact holes by i-line lithography using attenuated phase shift reticles",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "x - xvii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83477-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834775",
author = "B. and Martin",
keywords = "optical lithography",
keywords = "phase shift masks",
keywords = "simulation",
keywords = "photoresists",
abstract = "Experimental work to define 0.35 pm contact holes to size at i-line exposure (mercury arc at 365 nm) using embedded attenuated phase shift reticles is presented. The performance provided by two types of embedded reticle is compared to that using a ‘leaky chrome’ attenuated phase shift reticle. Results are supported by simulations, using ‘SOLID’, whereby focus/exposure matrices using binary and attenuated phase shift reticles are derived for contemporary and advanced i-line photoresists."
}
@article{Heinz1997xviii,
title = "ESWIS - ESEC wire bonder image system",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "xviii - xxiv",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)83478-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297834787",
author = "Heinz and Burkhalter",
abstract = "In 1992 ESEC decided to develop its own image processing system ESWIS (ESEC Wire Bonder Image System) for the Wire Bonder 3006. The reasons for this were the knowledge that image processing, together with the highly accurate positioning technology and the current bond process knowledge, present the key technologies for wire bonding. With this in-house development, ESEC creates for itself the possibility to directly include its wire bonder knowledge and therefore to react quickly and flexibly to new market requirements. One and a half year after the successful market introduction of the ES WIS, the opportunity is now open to examine the concept and design o f the image processing system."
}
@article{Magafas1997107,
title = "The influence of metal work function on electrical properties of metal/ a-SiC:H Schottky diodes",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "107 - 114",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00077-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000778",
author = "L. Magafas and N. Georgoulas and A. Thanailakis",
abstract = "Electrical properties of Schottky diodes on rf sputtered a-SiC:H thin films for different metals (Mg,In,A1,Pd) were investigated. The M(=Mg,In,A1,Pd)/a-SiC:H Schottky diodes were found to exhibit very good rectification properties, with a turn-on voltage varying from 0·4 to 0· V, depending on the top metal used, and a reverse current density lower than 10−9 A/cm2 with a reverse break down voltage, VB, approximately equal to 15V. The ideality factor, η, was found to be 1·3±0·1. This, combined with the temperature dependence of I–V characteristics, indicates that thermionic emission is most likely the dominant transport mechanism. A linear increase of barrier height at room temperature, ϕbRT, with increasing metal work function, ϕm, was obtained, suggesting that a-SiC: H exhibits the same type of conductivity (n-type) as that found for non-hydrogenated a-SiC. Pd/a-SiC:H Schottky diodes were found to exhibit linear room temperature log I vs V characteristics, over eight orders of magnitude, making these devices suitable for many applications."
}
@article{Golnabi1997115,
title = "RMBITP: A reconfigurable matrix based built-in self-test processor",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "115 - 127",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00084-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000845",
author = "Habib Golnabi and John D. Provence",
abstract = "This paper presents a reconfigurable matrix based built-in self-test processor (RMBITP) which makes use of both software commands and reconfiguration of the design under test (DUT). The RMBITP self-test algorithm is based on a new 3-dimensional (stages) output data compaction scheme for minimizing the probability of aliasing error, the BIST time, and the engineering development effort while limiting the percentage BIST overhead to 15% or less. To illustrate the concept, the built-in selftesting of large complex designs ranging from 1 to 5 million gates is presented."
}
@article{AEA1997129,
title = "A semicustom IC for generating optimum generalized Reed-Muller expansions",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "129 - 142",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00087-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000870",
author = "A.E.A. and Almaini",
abstract = "The paper explains the theory and design of a semicustom integrated circuit (IC) for the generation of the optimum polarity of a given Boolean function. Given the minterm coefficients of a Boolean function, the chip computes the coefficients of all the fixed polarities of the generalized Reed-Muller expansions, and identifies the polarity with the least number of terms. The chip can also convert the coefficients of the positive polarity Reed-Muller expansion to a sum of products form. The design was completed using Mentor-Graphics VA.4 and the Mietec 0.7 μm CMOS Library."
}
@article{Lanchares1997143,
title = "A method for multiple-level logic synthesis based on the simulated annealing algorithm",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "143 - 150",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00063-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000638",
author = "Juan Lanchares and JoséIgnacio Hidalgo and Juan Manuel Sánchez",
abstract = "In this work we address the problem of the synthesis of multiple-level logic functions aimed at achieving area-efficient implementation, using the simulated annealing algorithm (SA). In the quest for a more efficient multiple level synthesis, a two-level optimization with ESPRESSO (T. Sasao, Logic Synthesis and Optimization, Kluwer, Amsterdam, 1993) is first carried out. Then, the SA algorithm is applied by means of two new cost functions which yield better results than those obtained with the classical cost functions. The results of the application of this method to the IWLS'93 benchmarks are shown to improve those obtained by the Design Optimizer tool of Synopsys."
}
@article{Sait1997151,
title = "Timing-influenced general-cell genetic floorplanner",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "151 - 166",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00086-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000869",
author = "Sadiq M. Sait and Habib Youssef",
abstract = "In this paper we present a timing-influenced floorplanner for general cell IC design. The floorplanner works in two phases. In the first phase we use the genetic algorithm and restrict the modules to be rigid and the floorplan to have slicing structure. This restriction results in a simple and elegant encoding, as well as large savings in run time. In this phase the search is directed toward floorplans that better satisfy timing constraints on the critical paths and delay bounds on all the nets. The objective function also incorporates area and wirelength. The second phase allows modification to the aspect ratios of individual modules to reduce further the area of the overall bounding box. This phase is constraint graph based. The approach combines the robustness of genetic algorithm with run time efficiency and elegance of constraint graph based method. Experimental results are presented."
}
@article{Karamarković1997167,
title = "Novel approximative analytical expressions for minority-carrier transit time including recombination",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "167 - 172",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00057-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000572",
author = "Jugoslav P. Karamarković and Nebojša D. Janković",
abstract = "A novel analytical model for the minority-carrier transit time has been developed including the recombination effects. It has been found that the recombination effects substantially influence transit time in quasi-neutral regions with low effective contact recombination velocities and/or low minority-carrier diffusion length. In these cases, the difference of charge control concept transit time and the basic transit time definition have been analysed."
}
@article{Jurczak1997173,
title = "A review of SOI transistor models",
journal = "Microelectronics Journal",
volume = "28",
number = "2",
pages = "173 - 182",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00078-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929600078X",
author = "Małgorzata Jurczak and Andrzej Jakubowski and Lidia łukasiak",
abstract = "Several SOI MOSFET models based on 1-D solution of Poisson's equation are compared in terms of their accuracy. A brief discussion of the simplifying assumptions leads to a conclusion that the methods used for surface potential evaluation strongly influence the accuracy of a model. An analytical approximation for the front surface potential is presented and then introduced into the fully analytical Lim-Fossum model [1]. The accuracy of the modified model is better than that of the original Lim-Fossum model [1]."
}
@article{tagkey1997i,
title = "Siemens applies IC technology to discrete capacitors",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "i - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87860-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878603",
key = "tagkey1997i"
}
@article{tagkey1997ii,
title = "Siemens selects sub-0.5 μm tools to support 20,000 wafers per month at new production line beginning in February 1997",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "ii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87862-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878627",
key = "tagkey1997ii"
}
@article{tagkey1997ii,
title = "New Tencor HRP-200 high resolution profiler meets surface planarity challenges posed by submicron features and complex processes such as metal CMP",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "ii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(97)90153-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269297901531",
key = "tagkey1997ii"
}
@article{tagkey1997ii,
title = "Sixteen microwave downstream single wafer ashers included in combined orders",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "ii - iii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87863-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878639",
key = "tagkey1997ii"
}
@article{tagkey1997iii,
title = "Ionization equipment orders from disk drive manufacturers exceed $1,000,000",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87867-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878676",
key = "tagkey1997iii"
}
@article{tagkey1997iii,
title = "Semifab orders for Taiwanese factory",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(97)90154-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269297901543",
key = "tagkey1997iii"
}
@article{tagkey1997iii,
title = "Newly formed subsidiary to expand software resources",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87866-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878664",
key = "tagkey1997iii"
}
@article{tagkey1997iii,
title = "Advance circuits facilities in Minnesota receive ISO 9002 certification",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "iii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87865-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878652",
key = "tagkey1997iii"
}
@article{tagkey1997iv,
title = "IEDM 1996 highlights",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "iv - vi",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87868-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878688",
key = "tagkey1997iv"
}
@article{Thomas1997vii,
title = "Dispensing answers the call: Speed, accuracy, and flexibility meet PCB assembly needs",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "vii - xi",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87869-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929787869X",
author = "Thomas and Prentice"
}
@article{tagkey1997xii,
title = "Fujitsu introduces the CE56 series 0.5 μm CMOS embedded sea-of-gates array ASIC",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "xii - ",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87870-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878706",
key = "tagkey1997xii"
}
@article{Lee1997xiii,
title = "Thermal interface material performance in microelectronics packaging applications",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "xiii - xx",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87871-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269297878718",
author = "Seri Lee and Malcolm Early and Mark Pellilo",
abstract = "The operation of nearly every electronic device generates heat, from the microprocessors used in computers, to mobile phone. The laws of physics dictate that the performance and reliability of electronics and other integrated circuit devices are absolutely constrained by device temperatures. Mathematicians have worked out formulae that indicate that for every 10°C rise in junction temperature the failure rate doubles. Performance and reliability are jointly constrained by the manner in which electronic components are cooled and how the overall system attributes are handled. Heat is a major problem that if left unaddressed can cause problems at all stages of a product's life-cycle.
Unless we find innovative ways to dissipate substantially more heat, there will be many more instances of equipment failure at a variety of points in and around the enclosure and package — all of them temperature-related."
}
@article{Al1997xxi,
title = "FPGAs achieve superior speed and density with antifuse advancements",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "xxi - xxiv",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(97)87872-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929787872X",
author = "Al and Graf",
abstract = "FPGAs based on low-resistance, low-capacitance “antifuse” programmable elements offer very high-speed performance with small, cost-effective die sizes for high-volume production applications. FPGA vendors continue to invest in this technology to push further into the performance and density/cost realm previously dominated by conventional mask programmed ASICs. These high-performance, high-density antifuse based products will further distance themselves in speed, cost, and ease-of-use from slower, more costly RAM-based FPGAs."
}
@article{Udrea19971,
title = "The trench Insulated Gate Bipolar Transistor— a high power switching device",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "1 - 12",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00058-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000584",
author = "Florin Udrea and Gehan Amaratunga",
abstract = "This paper presents a consistent theoretical study of the Trench Insulated Gate Bipolar Transistor (TIGBT). Specific on-state physical and geometrical effects, such as accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. Key issues such as safe operating area and breakdown termination techniques are discussed for the first time. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable swirching devices."
}
@article{AI199713,
title = "Free-standing submicrometre filament crystals of Si and GexSi1 − x",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "13 - 22",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00008-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000080",
author = "A.I. and Klimovskaya",
abstract = "In this paper our results of free-standing filament crystals study are discussed, and the physical model of the crystal is proposed. The role of surface reconstruction in the crystalline structure formation and all the properties of these crystals are shown."
}
@article{G199723,
title = "Electronically-tunable polysilicon-MOS resistors",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "23 - 27",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00022-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000225",
author = "G. and Wilson",
abstract = "A method of adjusting integrated-circuit resistors using linearized MOS devices as controllable shunts for fixed polysilicon resistors is presented. The scheme, which can compensate for a relatively wide range of process tolerances, offers a useful improvement in linearity compared with all transistor approaches and should prove serviceable in continuous-time filter applications."
}
@article{Pagey199729,
title = "Universal TSC module and its application to the design of TSC circuits",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "29 - 39",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00023-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000237",
author = "S. Pagey and A.J. Al-Khalili",
abstract = "In this paper, we present a universal totally self-checking (TSC) module and show that it can be used as a TSC AND, OR, NAND or NOR gate by performing appropriate routing at its input and/or output. We use the two-rail code to encode the signals and consider the multiple unidirectional stuck-at-fault model. We study the utility of such TSC modules in obtaining the TSC realization of a given circuit from its gate level description. We show that it is possible to obtain the SFS realization of a given circuit by replacing each gate in it with its respective TSC version. We discuss the properties that a circuit must have in order to obtain its TSC realization in this manner using the TSC gate."
}
@article{Arshak199741,
title = "Modelling of resolution enhancement processes in lithography",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "41 - 47",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00041-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000419",
author = "K.I. Arshak and D. McDonagh and A. Arshak and B.P. Mathur",
abstract = "This paper describes the modelling and simulation of two resolution enhancement techniques in lithography: (1) phase shift mask (PSM) technology; and (2) top surface imaging with silylation and dry development. The effect of the duty ratio on the image contrast is computed. Simulated one- and two-dimensional rim shifters and attenuated PSMs are presented. The effect of the aerial image on the silylation profile for the top imaging processes, DESIRE and PRIME, is also presented. The effect of the first etch step on the final resist profiles is examined. The partial pressure and the presence of magnetic fields are also presented."
}
@article{Hou199749,
title = "OTA-based evenphase sinusoidal oscillators",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "49 - 54",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00042-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000420",
author = "Chun-Li Hou and Jean-Shin Wu and Jerry Hwang and Hsiu-Chih Lin",
abstract = "Using a simple scheme, realization of some novel evenphase sinusoidal oscillators employing operational transconductance amplifiers (OTAs) as the active devices is proposed. These oscillators can provide 2n signals (n is a positive integer) equal in amplitude as well as equally spaced in phase. The practical four-phase and six-phase oscillators using OTAs will be realized and studied in detail. The circuits enjoy low component count and low sensitivity performance and are highly suitable for monolithic implementation in IC technology."
}
@article{Niccolò199755,
title = "Modelling of high-injection effects in bipolar devices",
journal = "Microelectronics Journal",
volume = "28",
number = "1",
pages = "55 - 63",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)00044-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296000444",
author = "Niccolò and Rinaldi",
abstract = "An analytical model for minority carrier transport and recombination in quasi-neutral regions at arbitrary injection levels is presented. The proposed approach retains a general dependence of the transport parameters on the doping concentration, and can thus be applied to arbitrary doping profiles. It also includes heavy doping effects and injection-dependent recombination mechanisms. Simple closed-form analytical expressions are derived for the minority-carrier currents in bipolar transistors, and for the effective recombination velocity of high-low junctions."
}
@article{tagkey1997iii,
title = "List of contents",
journal = "Microelectronics Journal",
volume = "28",
number = "0",
pages = "iii - ix",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80028-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800281",
key = "tagkey1997iii"
}
@article{tagkey1997x,
title = "Author index",
journal = "Microelectronics Journal",
volume = "28",
number = "0",
pages = "x - xii",
year = "1997",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(98)80029-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269298800293",
key = "tagkey1997x"
}
@article{tagkey1996i,
title = "News and updates in device application, process and materials being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "i - xxiv",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90000-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900002",
key = "tagkey1996i"
}
@article{Sait1996693,
title = "Scheduling and allocation in high-level synthesis using stochastic techniques",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "693 - 712",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00001-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000018",
author = "Sadiq M. Sait and Shahid Ali and Muhammad S.T. Benten",
abstract = "High-level synthesis is the process of automatically translating abstract behavioral models of digital systems to implementable hardware. Operation scheduling and hardware allocation are the two most important phases in the synthesis of circuits from behavioral specification. Scheduling and allocation can be formulated as an optimization problem. In this work, a unique approach to scheduling and allocation problem using the genetic algorithm (GA) is described. This approach is different from a previous attempt using GA (Wehn et al., IFIP Working Conference on Logic and Architecture Synthesis, Paris, 1990, pp. 47–56) in many respects. The main contributions include: (1) a new chromosomal representation for scheduling and for two subproblems of allocation; and (2) two novel crossover operators to generate legal schedules. In addition the application of tabu search (TS) to scheduling and allocation is also implemented and studied. Two implementations of TS are reported and compared. Both genetic scheduling and allocation (GSA) and tabu scheduling and allocation (TSA) have been tested on various benchmarks and results obtained for data-oriented control-data flow graphs are compared with other implementations in the literature. (A discussion on GSA was presented at the European Design Automation Conference Euro-DAC'94 in Grenoble, France, and TSA at the International Conference on Electronics, Circuits and Systems — ICECS'94 in Cairo, Egypt.) A novel interconnect optimization technique using the GA is also realized."
}
@article{Zhang1996713,
title = "A bidirectional vector associative memory architecture with application to neural networks",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "713 - 722",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00002-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929600002X",
author = "C.N. Zhang and M. Wang and W.K. Chou",
abstract = "A bidirectional architecture for associative memory (AM) capable of vector arithmetic operations is proposed. By introducing a pair of masking and tagging mechanisms, the conventional concepts of bit-operations and word-operations in AM have been generalized to row and column operations, respectively. The proposed architecture demonstrates a symmetrical functionality such that associative processing can be performed in both column and row directions. A set of built-in vector arithmetic and logic units (VALU) is designed to perform the basic vector operations, which offers O(max{n, m}) speed-up for vector operations over the conventional AM at an O(n + m) cost for realizing an n × m AM array. As an applicational example, an associative processing implementation for artificial neural networks is presented."
}
@article{Binns1996723,
title = "Generating, capturing and processing supply current signatures from analogue macros in mixed-signal ASICs",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "723 - 729",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00021-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000213",
author = "R.J. Binns and D. Taylor and T.I. Pritchard",
abstract = "Transient Response Testing is a powerful test technique for analogue macros in mixed-signal electronic systems which with some enhancement can be particularly useful for testing deeply buried circuit structures. Supply current testing is finding widespread application in the digital domain and its use in the analogue domain may lead to integrated test methodologies for mixed-signal systems. This paper shows that by utilizing both these techniques, and a low-cost test shell, deeply buried analogue macros can be partitioned, tested using Transient Response Testing and the resulting response accurately captured from the total device supply current. It also contains an analysis of the noise on the supply current, due to digital circuit activity during testing, and demonstrates a test response analysis technique which is insensitive to it."
}
@article{Arslan1996731,
title = "Low power design for DSP: methodologies and techniques",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "731 - 744",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00010-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000109",
author = "T. Arslan and A.T. Erdogan and D.H. Horrocks",
abstract = "Power dissipation is becoming a limiting factor in the realization of VLSI systems. The principal reasons for this are maximum operating temperature and, for portable applications, battery life. Because of the relatively greater complexity, the power dissipation in digital signal processing (DSP) applications is of special significance, and low power design techniques are now emerging. This paper provides an overview of the techniques and methodologies that have emerged in the past few years for DSP system design. These include techniques for minimizing power at architectural and algorithmic levels including DSP programming issues. In addition, the paper indicates some potential design directions."
}
@article{Jones1996745,
title = "Berger check prediction for concurrent error detection in the Braun array multiplier",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "745 - 755",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00013-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000134",
author = "C.M. Jones and S.S. Dlay and R.N.G. Naguib",
abstract = "The design and development of concurrent error detection arithmetic and logic units has initiated significant research concerning information coding schemes. Published research has used the unidirectional fault detection capabilities of Berger codes to achieve a fault tolerant Braun array multiplier.
In this paper we develop Berger check symbol prediction and show that the previously reported Berger coded prediction is in error, making the results inappropriate for the realization of practical concurrent error detection systems. Furthermore, we show that the Berger coded Braun array multiplier can not only achieve the objective for detecting unidirectional faults but analysis has indicated an inherent ability of the Berger check prediction technique for error detection beyond the scope for which it was originally intended. In fact the coding provides error detectability for single and multiple stuck-at faults. Further study suggests the performance of the Berger check prediction Braun array multiplier tends towards 100% error detectability for increasing input bit length and hence array dimensions.
The Berger check predictive Braun array multiplier has, therefore, introduced a high level of concurrent error detectability with only a minimal extension in the hardware implementation."
}
@article{BrankoL1996757,
title = "CMOS NAND and NOR Schmitt circuits",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "757 - 765",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00009-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000092",
author = "Branko L. and Dokić",
abstract = "Original solutions of m-input NAND and NOR logic circuits with hysteresis in the transfer characteristics are proposed. Multiple inputs are done similarly to standard NAND and NOR logic circuits. The logic circuits proposed in this paper consist of 2m + 1 paris of enhancement CMOS transistors. The hysteresis voltage depends on supply voltage and transistor geometry. The proposed solutions always guarantee hysteresis, even with very large process variations. The noise immunity is typically greater than 50% of supply voltage. Analysis using simple device models together with computer simulations and experimental results is given."
}
@article{Malcolm1996767,
title = "Eastern Europe in the global microelectronics world",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "767 - 775",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00003-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000031",
author = "Malcolm and Penn",
abstract = "With the opening up of Eastern Europe to the West, new market opportunities abound, especially in the electronics industry for both East and West European firms alike. However, many barriers have yet to be overcome before these new opportunities can be transformed into business reality. This paper reviews the recent trends in East European microelectronics together with the current outlook and future growth potential."
}
@article{Hwang1996777,
title = "The state-of-the-art and future trends in DRAMs",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "777 - 783",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00004-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000043",
author = "C.G. Hwang and S.I. Lee and M.Y. Lee",
abstract = "The production of future generation DRAM devices critically requires R&D of process technologies for highly integrable and cost effective processes. Also, in order to support the ever-increasing requirements for high performance operation, the future DRAM products should be equipped with the capabilities of low voltage operation and high speed. This paper presents an overview of process technology for deep sub-micrometer devices such as a 256 Mbit DRAM based upon current research data and giga bit DRAMs."
}
@article{Babiker1996785,
title = "New evidence for velocity overshoot in a 200 nm pseudomorphic HEMT",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "785 - 793",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00011-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000110",
author = "S. Babiker and N. Cameron and A. Asenov and S.P. Beaumont",
abstract = "It is believed that significant velocity overshoot effects are responsible for the high performance of pseudomorphic HEMTs (PsHEMTs). The overshoot is associated with the low effective mass in the InGaAs channel and the large Γ-L separation. Average channel electron velocities well in excess of 3.0 × 107 cm/s have been predicted in Monte-Carlo PsHEMT simulations. However, average electron velocities extracted from transconductance measurements of such devices are much lower, typically in the range 1.5–2.0 × 107 cm/s. In this paper we analyse real device measurements by using Monte-Carlo and drift diffusion simulations. We show clear evidence that the average velocity in the channel of a 200 nm PsHEMT fabricated in the Nano-electronics Research Centre of Glasgow University exceeds 3.0 × 107 cm/s."
}
@article{Dudek1996795,
title = "Silicon MOSFETs on insulator with lithography-independent 100 nm channel length",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "795 - 802",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00012-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000122",
author = "V. Dudek and W. Appel and L. Beer and G. Digele and B. Höfflinger and H. Schneider",
abstract = "Future field-effect transistors should have control regions — also called channels or barriers — of a few tens of nanometers to achieve a transconductance of 1 S/mm and beyond, ƒT of 100 GHz and safe operating voltages beyond 1 V. This paper presents two approaches for the fabrication of such MOS transistors in silicon on insulator (SOI) on today's average technology lines without resorting to nanometer lithography, but rather using differential doping available in reduced-temperature epitaxy and implantation. With 6 nm oxynitride gate dielectrics, inner transconductances of 700 mS/mm at room temperature are reported."
}
@article{SL1996803,
title = "Introduction to high-speed electronics and optoelectronics: M.L. Riaziat, Wiley, New York, 1996, 298 pp., £50.00",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "803 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)82779-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269296827790",
author = "S.L. and Hurst"
}
@article{SL1996803,
title = "Logic synthesis for field-programmable gate arrays: R. Murgai, R.K. Brayton and A.S. Vincentelli, Kluwer Academic, Norwell, MA, 1996, 427 pp., US $115.00, UK £75.95, D.fl. 195.00",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "803 - 804",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)82780-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269296827807",
author = "S.L. and Hurst"
}
@article{Robert1996804,
title = "Principles of plasma discharges and material processing: M.A. Lieberman and A.J. Lichtenberg, John Wiley, New York, 1994, 572 pp",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "804 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)82781-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269296827819",
author = "Robert and Keatch"
}
@article{Janković1996804,
title = "Hand book of sensors and actuators 1: Thick film sensors: M. Prudenziati (ed.), Elsevier Science Publishers BV, Amsterdam (in the USA/Canada: Elsevier Science Inc., New York), 1994, 471 pp., US$148.50, Dfl.260.00",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "804 - 806",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)82782-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269296827820",
author = "N. Janković and Z. Djurić"
}
@article{Zoran1996806,
title = "Physical architecture of VLSI systems: Robert J. Hannemann, Allan D. Kraus and Michael Pecht (eds), John Wiley & Sons, New York, USA, 1994, 887 pp",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "806 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)82783-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269296827832",
author = "Zoran and Stamenković"
}
@article{M1996806,
title = "Optical characterization of epitaxial semiconductor layers: G. Bauer and W. Richter (eds), Springer, Berlin, Heidelberg, New York, ISBN: 3-540-59129-X",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "806 - 807",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)82784-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269296827844",
author = "M. and Henini"
}
@article{tagkey1996III,
title = "List of contents and author index volume 27, 1996",
journal = "Microelectronics Journal",
volume = "27",
number = "8",
pages = "III - VIII",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90001-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900014",
key = "tagkey1996III"
}
@article{tagkey1996i,
title = "News and updates in device application, process and materials being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "i - xxiii",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90010-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900105",
key = "tagkey1996i"
}
@article{O'Sullivan1996597,
title = "The 6th ESPRIT workshop on the characterisation and growth of thin dielectrics in microelectronics",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "597 - 598",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00099-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000992",
author = "Paula O'Sullivan and Alan Mathewson",
abstract = "The 6th ESPRIT workshop on the Characterisation and Growth of Thin Dielectrics in Microelectronics was held in Kinsale, County Cork, Ireland, on 22 and 23 November 1994. This workshop was organised by the Irish National Microelectronics Research Centre (NMRC)."
}
@article{Gilles1996599,
title = "Effects of plasma induced charges on thin oxide of CMOS technologies",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "599 - 609",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00101-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001018",
author = "Gilles and Reimbold",
abstract = "Gate oxide degradation by damage due to process induced charging, also called antenna effects, has been identified as a major problem impacting the gate integrity of integrated circuits. This paper presents a brief review of this problem. After a general description of antenna effects, we present how to characterize a C.MOS technology and how to determine the most critical steps of the process. The test mask and test method used and also the other methods of the literature are presented.. We show that we can evidence both t0 effects on the main parameters like threshold voltage, and also second order effects like shifts after Fowler-Nordheim injection. These second order effects are very sensitive to the severity of the process, and can also impact the reliability of the circuits. Then we briefly present how charging can affect reliability in real case circuits."
}
@article{Verweij1996611,
title = "Dielectric breakdown I: A review of oxide breakdown",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "611 - 622",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00104-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001042",
author = "J.F. Verweij and J.H. Klootwijk",
abstract = "This paper gives an overview of the dielectric breakdown in thin oxide layers on silicon. First test methods are discussed, followed by their application to the estimation of the oxide lifetime. The main part of the paper is devoted to the physical background of the intrinsic breakdown. Finally, defect-related or extrinsic breakdown is discussed."
}
@article{Klootwijk1996623,
title = "Dielectric breakdown II: Related projects at the University of twente",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "623 - 632",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00105-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001050",
author = "J.H. Klootwijk and J.F. Verweij and J.B. Rem and S. Bijlsma",
abstract = "In this paper an overview is given of the related activities in our group of the University of Twente. These are on thin film transistors with the inherent difficulty of making a gate dielectric at low temperature, on thin dielectrics for EEPROM devices with well-known requirements with respect to charge retention and endurance and, finally, on thin film diodes in displays with unexpected breakdown properties."
}
@article{Martin1996633,
title = "Correlation of SiO2 lifetimes from constant and ramped voltage measurements",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "633 - 645",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00100-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500100X",
author = "Andreas Martin and Paula O'Sullivan and Alan Mathewson",
abstract = "This paper investigates constant voltage stress (CVS) and ramped voltage stress (RVS) for thermally grown oxides on single crystal and on polycrystalline silicon. CVS is a standard stress for the measurement and prediction of oxide lifetimes. However, RVS has the advantage over CVS of recording the breakdown properties in a very fast time and is, therefore, widely used in industry. The aim of this work is the assessment of a correlation between times to breakdown of RVS and CVS. Times to breakdown of RVS and CVS are compared directly and it has been found that they do not correlate with a simple classical model. An anomaly is reported for thick oxides grown on polycrystalline silicon: greater breakdown voltages are recorded for slow ramps than for fast ramps. It is shown that the times to breakdown which are estimated from RVS are longer than times to breakdown of CVS. The increase in times is dependent on the oxide thickness. This is verified with CVS measurements on pre-stressed oxides. In contradiction to the literature, results from pre-stressed oxides were found to have greater time to breakdown and charge to breakdown values than data of virgin oxides. The results of this work give evidence that the time to breakdown and the injected charge to breakdown of the voltage stress measurements are strongly influenced by charge trapping effects in the oxide layer. Longer times to breakdown resulting from a RVS have to be taken into account when lifetimes at use conditions are predicted from RVS results. If this is not considered oxide lifetimes at operating voltage will be overestimated."
}
@article{Weidner1996647,
title = "Nitrogen incorporation during N20- and NO-oxidation of silicon at temperatures down to 600°C",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "647 - 656",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00102-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001026",
author = "G. Weidner and D. Krüger and M. Weidner and T. Grabolla",
abstract = "The preferred incorporation of nitrogen in the SiOx transient layer near the SiO2/Si interface was investigated using N20- and NO-oxidation at temperatures from 1200°C down to 600°C and 20 s to 135 min process time. The peak nitrogen content, measured by AES and SIMS depth profiling, was accumulated with a high starting rate during N2O-oxidation. This leads to a temperature-dependent concentration level of nitrogen of 4.5 at.% down to 0.25 at.% at the lowest temperature. An exponential fit of the peak nitrogen concentration (Npeak) against reciprocal temperature gives an apparent activation energy of about 0.45 eV under the conditions used here at rapid thermal and at conventional furnace oxidation. After longer process time, e.g. 270 s to 800 s, a further low rate nitrogen accumulation at the SiO2/Si interface was measured. This also holds at reduced temperatures down to 600°C, independent of the type of preoxide grown by dry 02-oxidation or by chemical vapor deposition (CVD). The NO-oxidation leads to a more than three times higher peak nitrogen level, dependent on temperature and time. A low thermal budget gate oxide preparation with nitrogen stabilization of the interface seems to be possible at 800C with not more than 30 s to 40 s process time using a CVD preoxide and diluted NO."
}
@article{Suehle1996657,
title = "Characterization of time-dependent dielectric breakdown in intrinsic thin SiO2",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "657 - 665",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00103-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001034",
author = "John S. Suehle and Prasad Chaparala",
abstract = "Time-dependent dielectric breakdown data collected from 6.5-, 9-, 15-, 20- and 22.5-nm-thick SiO2 films are presented. The failure distributions are of single mode with no apparent extrinsic population. The logarithm of the median-test-time-to failure, log(t50), is described by a linear electric field dependence. Contrary to reports in earlier studies, the field acceleration parameter is observed to be insensitive to temperature and has a value of approximately 1.0 decade MV−1 cm−1 for the range of oxide thicknesses studied. Capacitance-voltage studies indicate that there is no strong correlation between oxide trapped charges and time to failure under constant voltage stress conditions."
}
@article{Bauer1996667,
title = "High quality 4 nm gate dielectrics prepared at low pressure in oxygen and nitrous oxide atmospheres",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "667 - 673",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00106-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001069",
author = "A.J. Bauer and E.P. Burte",
abstract = "Thin silicon oxide nitridation in N20 has been demonstrated to improve the dielectric characteristics in terms of charge to breakdown and trapping under current injection. For the first time we report fairly extensive experimental results of the thermal N20 oxidation of silicon at low pressure. The results clearly indicate a higher oxidation rate in N20 atmosphere than in 02 atmosphere at a pressure of 4.5 Torr, in contrast to the rates at atmospheric pressure. Ultrathin (<5 nm) dielectric films for the application in metal-oxide-semiconductor devices have been fabricated in a N20, O2:N2O and 02 atmosphere at reduced pressure and electrically characterized. The low pressure N20 oxides exhibit better oxide homogeneities across the wafer, higher charge to breakdown values and dielectric breakdown fields than atmospheric pressure oxides."
}
@article{F1996675,
title = "Sheet resistance and layout effects in accelerated tests for dielectric reliability evaluation",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "675 - 685",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00107-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001077",
author = "F. and Pio",
abstract = "Different extrapolation algorithms can be used to calculate gate oxide lifetime from accelerated reliability tests. The measurement is often carried out on large area capacitors in order to be statistically meaningful with respect to the active oxide area of the devices. This also allows a reduction of test time and therefore of cost. However, both the capacitor layout and the sheet resistance either of gate or of substrate or of interconnections can have a huge impact on the correctness of the experimental data. In this work it will be shown that lifetime forecast can be largely over-estimated due to series resistance. Moreover, a non-optimized layout of the capacitor can induce a non-uniform stress on the oxide due to sheet resistance effects. The validity of the accelerated test is also questionable in this case. Some guidelines to avoid errors in the collection of raw data will also be given."
}
@article{Kivi1996687,
title = "SHE injection as studied by three level charge pumping",
journal = "Microelectronics Journal",
volume = "27",
number = "7",
pages = "687 - 691",
year = "1996",
note = "Characterisation and Growth of Thin Dialectrics in Microelectronics",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00060-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000602",
author = "M.J. Kivi and S. Taylor",
abstract = "Three level charge pumping (3LCP) is used in the evaluation of oxide field effects during substrate hot electron (SHE) injection in nMOSFETs. For increasing oxide field during stress, it is found that interface state generation increases in both the upper and lower parts of the band gap. Also presented are results for the effects of SHE stress on emission time constants and capture cross-section of the interface states. The results indicate that for increasing oxide fields during SHE stress the emission time decreases and interface trap capture cross-section increases in the lower band gap. In the upper band gap the situation is complicated by the lack of complete saturation in the measured charge pumping current; however, a similar increase in emission cross-section is found."
}
@article{tagkey1996i,
title = "Industrial section",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "i - xxiv",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)81908-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269296819082",
key = "tagkey1996i"
}
@article{Udrea1996449,
title = "Design of a silicon microsensor array device for gas analysis",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "449 - 457",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00112-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001123",
author = "Florin Udrea and Julian W. Gardner",
abstract = "This paper describes the design of a silicon-based microsensor array for application in gas or odour monitoring. Individual sensor cells consist of both lateral and vertical electrode pairs to measure film conductance and/or capacitance. The fabrication process involves standard silicon technologies to integrate a platinum or nickel-iron heater below the sensor cells. A simulation of the device gives a thermal response time of only 60 ms and an ultra low power loss of about 50 mW at 400°C per sensor. This compares well with experimental values observed on a similar device. The process technology is suitable for both the deposition of organic materials (e.g. conducting polymers) and inorganic materials (e.g. semiconducting oxides). A scheme of the tranducer interface circuity is also provided, and could be used in a portable battery-powered instrument."
}
@article{Nikolić1996459,
title = "A photoacoustic investigation of transport properties and thermal diffusivity of InSb single crystals",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "459 - 469",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00025-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000259",
author = "P.M. Nikolić and D.M. Todorović and D.G. Vasiljević and P. Mihajlović and K. Radulović and Z.D. Ristovski and J. Elazar and V. Blagojević and M.D. Dramićanin",
abstract = "Thermal and electronic transport properties of low-doped single crystal InSb were determined for the first time and analyzed using a photoacoustic frequency heat transmission technique. The thermal diffusivity, excess carrier lifetime, front and rear side recombination velocity and electronic diffusivity were determined by comparing experimental results and theoretical photoacoustic signals."
}
@article{Abuelma'atti1996471,
title = "A novel current-conveyor-based universal current-mode filter",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "471 - 475",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00108-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001085",
author = "Muhammad Taher Abuelma'atti and Aiman Muhammad Shabra",
abstract = "A novel universal current-mode filter with single input and arbitrary number of outputs is presented. The proposed filter uses second-generation current-conveyors, grounded resistors and grounded capacitors. The proposed circuit can simultaneously realize lowpass, highpass, bandpass, allpass and notch biquadric filter functions. The feasibility of the proposed structure is confirmed by experimental results using commercially available current-conveyors"
}
@article{Torelli1996477,
title = "A CMOS micropower input amplifier for hearing aids",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "477 - 484",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00109-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001093",
author = "Guido Torelli and Ernestina Chioffi and Franco Maloberti",
abstract = "This paper describes a CMOS input amplifier for integrated circuits in hearing aids. It has a differential-input differential-output topology, which allows direct driving of cascaded fully-differential processing stages. The adoption of the voltage-to-current conversion and current feedback technique in the amplifying structure, together with the use of a simple differential stage in the offset reduction and in the common-mode feedback loops, allows micropower consumption to be achieved. Experimental results show very good noise and total harmonic distortion performance."
}
@article{Civardi1996485,
title = "An AHDL-based methodology for computer simulation of switched-capacitor filters",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "485 - 497",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00110-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001107",
author = "L. Civardi and U. Gatti and G. Torelli",
abstract = "In this paper an AHDL-based method for computer simulation of switched-capacitor networks is described. It is based on the transformation of these circuits from the sampled-data domain to the continuous-time domain and on the description of the obtained network with a behavioural language. This approach uses a general-purpose circuit simulator to analyse accurately and efficiently a wide range of circuits in both the frequency and the time domain. Reduced computation time is also ensured. The performance and the advantages of this method are illustrated by presenting and discussing a number of simulation examples."
}
@article{Batchelor1996499,
title = "Integral heat sink analysis for two-terminal microwave oscillator devices",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "499 - 503",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00111-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001115",
author = "A.R. Batchelor and V. Postoyalko",
abstract = "A theoretical analysis to calculate the maximum temperature within integral heat sink packages, for two-terminal microwave oscillator devices, is outlined. Results, useful for design purposes, are presented that show how the maximum temperature rise depends on the input heat flux and the dimensions and thermal conductivity of the heat sink materials."
}
@article{Victor1996505,
title = "Complex-signal sigma-delta modulators for quadrature bandpass A/D conversion",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "505 - 524",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00114-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500114X",
author = "Victor and da Fonte Dias",
abstract = "This paper presents a study on complex-signal sigma-delta (ΣΔ) modulators suitable for quadrature bandpass analogue-to-digital conversion of signals in monolithic radio receivers. The noise-shaping in complex-signal modulators is not symmetric with respect to dc, i.e. the zeros in the noise transfer function are not complex-conjugate as in conventional bandpass modulators. First-order (L = 1), second-order (L = 2) and high-order (L > 2) cascade topologies are discussed together with design methodologies suitable for switched-capacitor (SC) realization. Complex-signal fully-differential SC integrators and sigma-delta modulators are also addressed. The concepts, design methodologies and circuits proposed have been validated through simulations made with TOSCA (V. Literali et al., IEEE Trans. CAD Integrated CAS, 12(9) (1993) 1376–1386) and SWITCAP-2 (K. Suyams et al., IEEE J. Solid-State Circuits, 25(6) (1990) 1403–1413)."
}
@article{MF1996525,
title = "Electromechanical silicon beam filter bank",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "525 - 530",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00119-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001190",
author = "M.F. and Hribšek",
abstract = "The use of a multisilicon beam structure as a filter bank for extraction of very close signals is investigated. The theory and design of such a filter bank is presented. The filter fabrication is compatible with silicon IC technology so that it can be easily incorporated in any silicon integrated circuit. The filter bank can be used for channel filtering in HF communication systems."
}
@article{Singh1996531,
title = "Discrimination of individual gases/odours using polar plot of an integrated thick film sensor array",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "531 - 537",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00077-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000771",
author = "V.K. Singh and R. Dwivedi and S.K. Srivastava",
abstract = "A simple discrimination technique for detection and identification of individual gases/odours using a polar plot based on response of an integrated sensor array is presented. The responses of an array of eight integrated sensors are used to generate the desired pattern. The required pattern is generated by taking the normalized response of the sensors (normalization with reference to the response of the first sensor). For the identification of gases/odours, the data set is generated by taking the opposite angle of adjacent sensors in training mode and comparing with the data set obtained in the sniffing mode. The suggested method has been validated using experimental data for butanol, methanol and propanol."
}
@article{Raczkowycz1996539,
title = "Embedded ADC characterization techniques using a BIST structure, an ADC model and histogram data",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "539 - 549",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00095-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500095X",
author = "J. Raczkowycz and S. Allott",
abstract = "A test technique is presented which utilizes a BIST structure, an ADC model and histogram data to characterize embedded ADCs. An industry standard 8 bit ADC is modelled and then characterized using 20% fewer data points than conventional analysis with a 78% reduction in the volume of data required to be shifted offchip. Comparisons between theoretical, modelled and practical results are also made in the paper."
}
@article{Ganesh1996551,
title = "Analysis of an OTA with internal positive feedback",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "551 - 557",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00113-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001131",
author = "Ganesh and Kothapalli",
abstract = "In this paper expressions for the damping factor and cross-over frequency of a CMOS OTA with internal positive feedback are derived. The closed-form expressions relating the damping factor to the conductances (gd) and the transconductances (gm) of the devices of the amplifier are later expressed in terms of the fabrication process parameters. The optimum value of the conductance that determines the output impedance of the CMOS amplifier and the trans-conductances that determine the amount of internal positive feedback are found using the Lagrangian constrained minimization method. An example of minimizing the sensitivity of the damping factor of a second-order system amplifier with internal positive feedback is described."
}
@article{Milentijević1996559,
title = "Configurable digit-serial convolver of type F",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "559 - 566",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00115-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001158",
author = "Ivan Z. Milentijević and Mile K. Stojčev and Dejan M. Maksimović",
abstract = "The semi-systolic architecture, known as design F, is used as a basic structure for synthesis of a digit-serial fault-tolerant convolver. The proposed convolver has the structure of a tree with connected leaves. Leaves are multiplier cells, while nodes are adder cells. The Diogenes approach is a well-known reconfiguration technique for structures with identical processing elements (PEs), and is accepted for reconfiguration of the proposed convolver. In order to apply the Diogenes approach to the proposed structure, we propose the modification of this approach which relates to involving PEs of two types. The proposed modification provides configuration of the convolver structure in a number of taps in the presence of faults, so the fault tolerance is achieved through dynamic reconfiguration."
}
@article{Prijić1996567,
title = "Simple method for the extraction of power VDMOS transistor parameters",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "567 - 570",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00120-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001204",
author = "Z. Prijić and P. Igić and Z. Pavlović and N. Stojadinović",
abstract = "A simple method for the extraction of power VDMOS transistor parameters, based on the combination of the drain current and transconductance transfer characteristics in both linear and saturation regions, is presented. Reliable values of five parameters necessary for the complete description of the output I-V characteristics are obtained."
}
@article{Jog1996571,
title = "New 2D diffusion simulator using spatial variable transformation",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "571 - 575",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00116-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001166",
author = "Sujata Jog and V.P. Sundarsingh",
abstract = "A two-dimensional diffusion simulator for simulating the non-linear diffusion equation is developed. It makes use of spatial variable transforms, resulting in improved space resolution, especially while solving over infinite spatial distance. The simulator is especially advantageous for analysing deep junctions like those needed in power devices."
}
@article{Gagara1996577,
title = "Illumination controlled S-shaped current-voltage characteristics of p+-nSi-ITO structures",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "577 - 581",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00117-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001174",
author = "L.S. Gagara and E.A. Negru and V.N. Pleshka and A.V. Simashkevich and D.A. Sherban",
abstract = "Silicon p+n-insulator-ITO structures have been obtained by the deposition of a thin layer of In2O3:SnO2((ITO) on the n-region of a silicon p-n junction by a spray method. The two-terminal structure shows S-shaped negative resistance I–V characteristics similar to long-base diodes, thyristors and other switching devices. The switching is controlled by optical illumination, but unlike other S-shaped devices, in our case the light switches the structure from high-resistance to the low-resistance state. A band diagram for the investigated structure has been proposed. This diagram allows one to explain the observed current switching as a result of double injection in the nSi region, which became difficult under illumination."
}
@article{MuhammadTaher1996583,
title = "Linearization techniques for bipolar emitter-coupled pairs: a comparative study",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "583 - 590",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00118-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001182",
author = "Muhammad Taher and Abuelma'atti",
abstract = "Bipolar emitter-coupled pairs are basic building blocks in many analogue integrated circuits. Because of the high intermodulation and adjacent channel radiation performance requirements, state of the art communication electronic circuits require extremely linear transfer functions of the emitter-coupled pairs and several techniques have been proposed for their linearization. In this paper, a comparative study of these linearization techniques is presented. A simple procedure for approximating the transfer characteristics of an emitter-coupled pair is proposed and closed-form expressions are obtained for the amplitudes of the intermodulation products at the output of an emitter-coupled pair excited by a multisinusoidal input signal. Using these expressions comparison between the different linearization techniques can be performed and the optimum linearization technique required to meet a predetermined intermodulation performance can be decided."
}
@article{AhmedM1996591,
title = "Mixed-mode biquad circuits",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "591 - 594",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00121-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295001212",
author = "Ahmed M. and Soliman",
abstract = "Two new mixed-mode biquad circuits are given. Each circuit employs four current conveyors, two grounded capacitors and four resistors. The biquad circuits are designed to be driven by currents and to reliaze highpass, bandpass and lowpass voltage responses at three different outputs. All the ω0 and the Q passive and active sensitivities are very low (≤1)."
}
@article{tagkey1996595,
title = "Erratum",
journal = "Microelectronics Journal",
volume = "27",
number = "6",
pages = "595 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)81907-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269296819070",
key = "tagkey1996595"
}
@article{Sarah1996i,
title = "AIXTRON GmbH — The CVD engineering company",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "i - ii",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90005-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900051",
author = "Sarah and O'Connell",
abstract = "In the short space of ten years, AIXTRON has established itself as one of the world's leading manufacturers of state-of-the-art MOCVD equipment, providing complete solutions for the production of opto- and microelectronic components, lasers, detectors, MESFETs, guided optics and many other advanced devices. The company's continuing rapid expansion is due primarily to its fast-moving, forward-looking approach, which is reflected both in its product development and in its worldwide business expansion."
}
@article{Xiao1996iii,
title = "VGF Excellence at AXT: a major force in manufacturing III-V semiconductor substrates",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "iii - xiii",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90006-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900063",
author = "Xiao and Liu",
abstract = "AXT has established itself as the leading manufacturer of high-quality GaAs substrate material during the past few years. The company is expanding steadily into other III-V semiconductor substrates, such as InP and GaN. AXT's 1995 GaAs sales ranked No. 1 among all U.S. suppliers. The key to AXT's success: VGF technology."
}
@article{Sato1996xv,
title = "R&D of compound semiconductor materials in Japan energy",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "xv - xx",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90007-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900075",
author = "S. Sato and Takahiro Ishii and Hiroshi Miura",
abstract = "For epitaxial growth of various materials, high quality substrates are indispensable since in many cases, the quality of epitaxial layers largely depend on that of substrates. Japan Energy is a company who is leading the development of these substrates in the field of electronic materials."
}
@article{tagkey1996xxi,
title = "MCP Wafer Technology profile",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "xxi - xxv",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90008-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900087",
key = "tagkey1996xxi",
abstract = "MCP Wafer Technology has the longest history of any III-V wafer manufacturing company in the world. The current company was formed in 1990 from MCP Electronic Materials which was established in 1957 and ICI Wafer Technology which opened on the present site in 1985 and had its origins in the former Cambridge Instruments crystal growth activity. MCPWT is therefore able to draw on nearly forty years experience of most of the finest UK activities in crystal growth."
}
@article{tagkey1996xxvii,
title = "News and updates in device application, process and materials, being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "xxvii - l",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90009-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900099",
key = "tagkey1996xxvii"
}
@article{M1996253,
title = "Low dimensional structures and devices: epitaxial deposition techniques and materials systems",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "253 - 255",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00058-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000585",
author = "M. and Henini"
}
@article{Herman1996257,
title = "MBE growth physics: application to device technology",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "257 - 296",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00059-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000593",
author = "Marian A. Herman and Helmut Sitter",
abstract = "We present in this review a consistent picture of the current status of epitaxial growth physics, as related to molecular beam epitaxy. After a short introduction in the field we describe the different growth modes and the attributed theoretical models. Among the simulation methods used presently to describe the different growth modes, we selected the Monte-Carlo simulation for a more detailed example. The experimental part of the paper is divided in to two main sections of lattice-matched and lattice-mismatched systems. In the first part, we concentrate on the growth mechanisms on nominally oriented substrates and substrates with vicinal surfaces, which includes the description of the growth of tilted and serpentine superlattices. In the second part we discuss the concept of the critical layer thickness together with island formation and strain-induced effects. Besides these two main topics we report on the application of surface-active species, which provide a new avenue to achieve high-quality man-made microstructures against thermodynamic odds. Within this context self-organisation of epitaxial deposits is discussed. Finally, we describe material-related growth peculiarities, which are usually connected with a specific property of the constituent element, like volatility or extraordinary chemical reactivity. We briefly present the currently known growth characteristics for IV-IV heterostructures, wide-gap III–V and narrow-gap II–VI compounds."
}
@article{Behet1996297,
title = "MOVPE growth of III–V compounds for optoelectronic and electronic applications",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "297 - 334",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00060-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000607",
author = "M. Behet and R. Hövel and A. Kohl and A.Mesquida Küsters and B. Opitz and K. Heime",
abstract = "This paper reviews some of the most important aspects of MOVPE of III–V semiconductors. The paper starts with fundamental aspects of MOVPE in general, and turns to the use of novel precursors and precursor combinations with special emphasis on improvements in safety, material consumption, reactivities or precursor combinations and layer purity. The next section discusses special problems and advantages of selective area growth and growth on patterned substrates. Then the growth of heterostructures, quantum wells and superlattices for field-effect transistors, Wannier-Stark modulators and resonant tunnelling diodes is described. It will be shown that different growth parameters, e.g. different switching sequences between individual layers, are needed for either optoelectronic or electronic devices. The usefulness of MOVPE for various material combinations such as AlGaAs/GaAs, InP/InGaAs, InGaAs/InGaAs, InGaAsP/InGaAsP, InAs/AlSb and InAs/InPSb will be demonstrated by material properties and device performances."
}
@article{Dietmar1996335,
title = "Scaling of MOVPE processes between 1 × 2″ and 95 × 2″ wafers",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "335 - 342",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00068-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000682",
author = "Dietmar and Schmitz"
}
@article{Perrin1996343,
title = "Growth and characterization of HTSC thin films for microelectronic devices",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "343 - 360",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00061-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000615",
author = "A. Perrin and M. Guilloux-Viry and X. Castel and C. Le Paven-Thivet",
abstract = "General techniques for the growth of heteroepitaxial HTSC thin films are shortly reviewed, and some recent trends are emphasized. The crystallographic characterization of such films is described in detail, including various X-ray diffraction settings, as well as electron diffraction and channelling methods. Among physical characterizations, the microwave measurements are highly defect sensitive, and a clear correlation between the microstructure, the a.c. susceptibility losses and the surface resistance is reported. Finally, main trends about potential applications are given."
}
@article{Sugiyama1996361,
title = "MBE growth of fluorides",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "361 - 382",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00062-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000623",
author = "Muneshiro Sugiyama and Masaharu Oshima"
}
@article{DeBoeck1996383,
title = "Epitaxy of Mn-based magnetic thin films on semiconductors",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "383 - 392",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00063-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000631",
author = "J. De Boeck and W. Van Roy and C. Bruynseraede and A. Van Esch and H. Bender and G. Borghs",
abstract = "We review the epitaxy of Mn-based magnetic thin films and III–V semiconductors. It is demonstrated that by exploiting the epitaxial relationship to GaAs, novel artificial magnetic films can be fabricated. Metastable magnetic τ MnAl, forced bcc Co crystal structures and thin films with controlled magnetic anisotropy are feasible due to coherent growth on the semiconductor substrate. Novel magnetic superlattices and nano-scale magnetic particles embedded in a semiconductor matrix are described. The future synergism between semiconductor and magnetic thin films in research and applications is briefly discussed."
}
@article{M1996393,
title = "Stoichiometric low temperature (SLT) GaAs and AlGaAs grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "393 - 409",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00064-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500064X",
author = "M. and Missous",
abstract = "The growth of GaAs at low temperatures (LT-GaAs) at or below 250°C, under standard Molecular Beam Epitaxy (MBE) growth conditions, usually results in a massive incorporation of excess As in the lattice which then totally dominates the electrical and optical characteristics of the as-grown material resulting in almost electrically and optically inactive material (or at least defects controlled). In this review new phenomena associated with the growth of GaAs and AlGaAs at 250°C are reported and data on highly electrically and optically active doped material are shown. The electro-optical properties of LT-GaAs are literally indistinguishable from material grown at 580°C. By careful control of the growth conditions, and hence stoichiometry, material in which total defect concentrations of less than 1017 cm−3, well below the huge 1020 cm−3 that is normally obtained in LT-GaAs, can be achieved, therefore demonstrating that high quality GaAs and AlGaAs can in effect be epitaxially grown at very low temperatures. Such materials are termed Stoichiometric Low Temperature (SLT) semiconductors to emphasise the profound role of the latter in controlling the electro-optical properties of the III–V compounds."
}
@article{Watanabe1996411,
title = "AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "411 - 421",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00065-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000658",
author = "Toshihide Watanabe and Teiji Yamamoto and Pablo O. Vaccaro and Hajime Ohnishi and Kazuhisa Fujita",
abstract = "We have grown AlGaAs/GaAs and InGaAs/GaAs single quantum wells (SQWs) on exactly-oriented and misoriented GaAs (111)A substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) spectra of AlGaAs/GaAs SQWs grown on (111)A and related substrates depend on misorientation angles. Under optimized growth conditions, SQWs grown on the exactly-oriented and 5°-misoriented substrates show good surface morphology and have less than one monolayer of heterointerface roughness. On the other hand, 3°-misoriented samples show numerous giant terraces on the surface and their PL spectra show red-shifted and broadened peaks. We show that this phenomenon is caused by Al content and GaAs well thickness modulation at the risers of giant terraces. We have also observed Al content reduction in facets that occur spontaneously on AlGaAs layers grown on the exactly-oriented (111)A.
Then we show the influence of strain relaxation on the PL spectrum of InGaAs/GaAs strained quantum wells grown on GaAs (111)A substrates. The PL peak energy of InGaAs SQWs grown on (111)A related substrates show a large red-shift as compared with calculated values. The red-shift observed in SQWs grown on a (111)A 5°-misoriented toward [100] substrate can be explained by the presence of a built-in electric field E = 154 kV cm−1 due to the piezoelectric effect. The large red-shift observed in samples grown on the other substrates is partially due to strain relaxation. A strain relaxation mechanism that consists of coherently grown islands when InGaAs growth begins and the generation of misfit dislocations when these islands coalesce gives an explanation of the observed results."
}
@article{Kang1996423,
title = "Growth of GaAs epitaxial layers on porous silicon",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "423 - 436",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00066-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000666",
author = "T.W. Kang and J.Y. Leem and T.W. Kim",
abstract = "We have reviewed the initial stage and the reconstruction of GaAs epitaxial layers grown on Si substrates by various methods, the formation and the properties of porous Si films, the growth of GaAs epitaxial layers on porous Si by various methods, and the electrical, structural and optical properties of GaAs epitaxial layers grown on porous Si. In addition, we observed new interesting results such as the structural, optical and electrical properties of GaAs/porous Si heterostructures, and the advantages of and the possible applications for the GaAs/porous Si heterostructures are suggested."
}
@article{Lorenzo1996437,
title = "Porous silicon: a route towards a Si-based photonics?",
journal = "Microelectronics Journal",
volume = "27",
number = "4–5",
pages = "437 - 448",
year = "1996",
note = "LDSD: Epitaxial Deposition Techniques and Materials Systems",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00067-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000674",
author = "Lorenzo and Pavesi",
abstract = "By partial anodic dissolution of Si, it is possible to form an efficient room-temperature luminescent material named porous silicon (p-Si). In this paper the properties of p-Si are reviewed with special emphasis on the growth issue and on its application to light emitting diodes. The physical processes at the base of the luminescence are also discussed. It is suggested that the p-Si luminescence results from radiative recombination of excitons quantum confined in Si nano-crystals."
}
@article{tagkey1996i,
title = "News and updates in device application, process, and materials, being applied in today's microelectronics industry",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "i - xxiv",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90003-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900038",
key = "tagkey1996i"
}
@article{Stojadinović1996105,
title = "Power semiconductor devices — continuous development",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "105 - 107",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00079-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000798",
author = "N. Stojadinović and P. Spirito",
abstract = "After recalling the breakthroughs in the area of power semiconductor devices which appeared during the 1980s and their impact on power electronics applications, the present status and future trends in the development of power semiconductor devices are briefly reviewed, and the educatiobal needs for people engaged in this area are pointed out. The motivation for the publication of this second special issue of the Microelectronics Journal on power microelectronics lies in the awareness that this rapidly growing area is playing an increasingly important role in today's global society, which is becoming more conscious of the need to reduce energy consumption and environmental pollution. We hope that the five feature articles, one review paper and eight research papers selected for this special issue will provide sufficient coverage of all important aspects of power semiconductor devices, including the educational ones, and that this special issue will be useful for all people from academic and industrial environments who actively work in this area."
}
@article{Paolo1996109,
title = "Educational issues for power semiconductor devices",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "109 - 120",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00080-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000801",
author = "Paolo and Spirito",
abstract = "The teaching of power semiconductor devices often requires a more detailed presentation of the basic physical and electrical parameters than used in semiconductor device physics courses; this is true not only for the standard power devices, like BGTs, GTOs and power MOSs, but also for the more recent ones that merge the MOS effect with bipolar operation, like IGBTs, MCTs, ESTs, etc. In fact, usually in these basic courses many important items for the power devices such as the limiting effects of breakdown, the temperature effects on transport properties, the constraints posed by the large area and low doping, the effects of high injections and the limits imposed by high current effects, like secondary breakdown, are not considered.
In this paper some of the points will be briefly recalled that could be considered in courses dealing with power semiconductor devices, with the aim of suggesting a possible and useful link between the basic properties studied in solid state physics courses and the performance of modern power devices. In particular, the dependence of mobility and lifetime on doping, injection level and temperature should be stressed because they play a major role in the electrical operation of the devices. Secondly, the basic effects that limit the ratings of the power devices both in steady state conditions and in the turn-on and turn-off transients must be discussed and used to understand their role in the rating of different types of devices, either 2D effects that act in determining some important unipolar, bipolar, or mixed MOS-bipolar ones. Finally, the phenomena in power devices should be presented both with simplified analysis and with CAD tools; these latter need to be introduced to make the student aware of their use and possibilities."
}
@article{Turowski1996121,
title = "SEMDEM — educational software for bipolar semiconductor devices",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "121 - 129",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00081-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500081X",
author = "Marek Turowski and Zbigniew Lisik and Zenon J. Pudlowski",
abstract = "The SEMDEM program helps to examine the physical phenomena taking place inside semiconductor power devices during their operation, both in static and dynamic conditions. Distributions of various quantities, such as electric potential, electron and hole density, current density, etc., inside a p-i-n diode or a p-n-p-n thyristor can be observed simultaneously in separate windows on the screen, together with the corresponding point on a static characteristic or a transient waveform. The possibility of modification of various parameters allows for interesting observations of influence of these parameters on static or dynamic characteristics of the analysed semiconductor devices."
}
@article{Prijić1996131,
title = "Educational software for power VDMOS transistors",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "131 - 138",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)00082-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269296000821",
author = "Z. Prijić and D. Pantić",
abstract = "This paper describes educational software for power VDMOS transistors used at the University of Niš, Faculty of Electronic Engineering, Yugoslavia. It is intended to serve the education of both undergraduate and postgraduate students. The software is designed to support process and device simulation, experimental device characterization and optimization of the technology. Its architecture is described in detail, and educative simulation examples are also provided."
}
@article{Ansgar1996139,
title = "Didactical concepts and tools for explaining power electronics applications",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "139 - 147",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00083-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000836",
author = "Ansgar and Kern",
abstract = "Modern power electronics applications are complex microprocessor controlled systems which are very expensive to develop. Assessing and analysing an application before it is built reduces costs and saves development time. Analysing the whole system requires flexible and powerful software tools. In order to analyse applications, a solid education of students is mandatory. For educational purposes especially suited are simulation systems which give students a feeling for power electronics systems and later on are capable of growing and adapting to the gained knowledge of the user. The department of Power Electronics and Electrical Drives at the University of Siegen has developed a software package which is capable of simulating power electronic applications, e.g. electrical drive systems. The simulation system employs modern top-down-design strategies and object-oriented methods to model the application on screen. The application can be simulated in order to gain important data such as dynamic behaviour, load currents, switching frequencies of semiconductors and many more. The system is very useful for teaching the basic concepts of power electronics systems to students or electrical engineers interested in power electronics concepts."
}
@article{Jaroslav1996149,
title = "Simulation of power semiconductor systems as an educational tool",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "149 - 159",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00084-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000844",
author = "Jaroslav and Žáček",
abstract = "The paper presents a brief overview of methods and tools used for modelling of power semiconductor systems in educational practice. Simulated phenomena, models of semiconductor devices, and software tools are classified; mutual availability is discussed. Special attention is given to the simplified device models applied to the simulation of complicated phenomena, combining commutation and control processes of power semiconductor converters. Two principal sets of simulation tools are recommended—non-linear static models in port diagram and switch models in block diagram. Both cases are illustrated by the examples solved. Some possible applications in educational practice are outlined."
}
@article{Duncan1996161,
title = "Power semiconductor devices — continuous development",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "161 - 176",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00085-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000852",
author = "Duncan and Grant",
abstract = "Power electronics embraces many disciplines but the role of the power semiconductor device remains pivotal. New developments in device technology are eagerly anticipated since an improvement in the characteristics of the power semicondutor devices can have a major influence on the cost, weight and volume of the equipment in which they are used. This paper reviews presently available power semiconductor devices and highlights recent developments."
}
@article{Flores1996177,
title = "Numerical simulation of the insulated base MOS-controlled thyristor",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "177 - 180",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00086-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000860",
author = "D. Flores and P. Godignon and M. Vellvehí and J. Fernández and S. Hidalgo and J. Rebollo and J. Millán",
abstract = "This paper is aimed at the analysis of the insulated base MOS-controlled thyristor (IBMCT) using numerical simulations. This power device is composed of a vertical thyristor structure, two MOS gates (on-gate and off-gate) and a floating ohmic contact (FOC). Transient simulations confirm the turn-off capability, and show that holes are diverted from the p-base to the FOC during the turn-off process. The electrical characteristics have been compared with those of the shorted anode IBMCT. It is pointed out that this last structure is significantly faster than the IBMCT because the shorted anode provides a direct path for the extraction of the electron charge excess existing in the drift region during the turn-off process."
}
@article{Charitat1996181,
title = "Modelling and improving the on-resistance of LDMOS RESURF devices",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "181 - 190",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00087-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000879",
author = "G. Charitat and M.A. Bouanane and P. Austin and P. Rossel",
abstract = "We present in this paper some techniques to decrease the value of the drift region on-resistance of a lateral DMOS transistor (LDMOS). We first evaluate the technique using a shallow implanted layer between the channel and the drain of the transistor, whose doping is somewhat higher than the background doping level. Dose and energy should be carefully calibrated in order to ensure the largest on-resistance improvement but a good trade-off with the breakdown voltage is difficult. Secondly, we assess the on-resistance improvement achievable using a semi-resistive layer deposited between the gate and drain metals above the oxide layer. This will enhance the accumulated drift area and consequently decrease the on-resistance. The achievable improvement is less than for the surface doping technique. We propose to use both techniques to obtain the best on-resistance improvement/breakdown voltage trade-off. Surface doping will be employed to decrease the on-resistance and the semi-resistive layer will keep the breakdown voltage to its optimal value. We assess and demonstrate, with both analytical and numerical analyses, that large improvements can be achieved with these techniques without degrading the voltage handling capacity of the device. The on-resistance can be lowered by 40 to 66%. Experimental LDMOS transistors will be presented which exhibit good agreement with the theoretical predictions."
}
@article{Pantić1996191,
title = "Process design and optimization of the channel doping profile in power VDMOSFETs",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "191 - 200",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00088-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000887",
author = "D. Pantić and Z. Prijić and Z. Pavlović",
abstract = "In this paper the procedure for the process design of the channel doping profile in low-voltage power VDMOSFETs is presented. An optimization of some of the process parameters having greatest influence on the shape of the channel doping profile is briefly described. Effects of the variation of the p-body diffusion time on the threshold voltage and channel length are discussed in particular. It is shown that the threshold voltage sensitivity due to variations of p-body diffusion time can be minimized by appropriate adjustment of the source diffusion in the lateral direction. The results obtained show qualitatively good agreement of the two-dimensional process and device simulation with the design rules."
}
@article{Falck1996201,
title = "Calculation of the blocking capability of SOI power devices under the influence of interconnections",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "201 - 207",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00089-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000895",
author = "Elmar Falck and Willi Gerlach and Wolfgang Reckel",
abstract = "Numerical results are presented on the influence of a high-voltage interconnection on the blocking voltage of planar p-n junctions. The calculations are performed by a simulation program, which solves the Poisson equation using the depletion model. First, a device with a junction termination extension design was investigated. As the interconnection crosses the space charge region (SCR) in a small distance of only a few micrometres the field distribution is disturbed appreciably. Three-dimensional (3D) computations show that the lateral width of the metal stripe plays an important role in the breakdown voltage. If the width of the stripe is of the same order as the vertical width of the SCR the negative influence from the interconnection is maximal. Only for this case are 2D simulations justified. For this special instance 2D simulations of SOI devices with interconnection are performed."
}
@article{Murray1996209,
title = "High voltage wiring using biased polysilicon field plates",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "209 - 215",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00090-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000909",
author = "A.F.J. Murray and W.A. Lane",
abstract = "This paper describes a technique for 800V wiring in a typical high voltage integrated circuit. Polysilicon field plates are biased using undoped poly resistors, connected in a voltage division scheme between the high voltage source and ground (A.F.J. Murray and W.A. Lane, Proc. 23rd European Solid State Device Research Conf. (ESSDERC'93), 1993, pp. 891–894). The field plates linearize the potential along the surface between the high voltage drain and the grounded isolation, and hence reduce the surface field at the isolation edge. 2D numerical simulation is used to illustrate the effect of spacing variation between the field plates and the 3D effect of a real wire. The inter-layer dielectric is also investigated using initial measured results."
}
@article{Mawby1996217,
title = "Simulation of transient thermal effects during GTO turn off",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "217 - 229",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00091-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000917",
author = "P.A. Mawby and M. Evans and M.S. Towers",
abstract = "A rigorous two-dimensional physical model of the GTO thyristor is presented. The model includes the fully coupled effects of self-heating on the device during the turn-off phase of operation. The effects of spatially-dependent minority carrier lifetime. Auger recombination and carrier-carrier scattering are included in the model. Also, the effect of the temperature gradient on the internal current has been included. The simulation has been carried out within a realistic external circuit environment."
}
@article{Khatir1996231,
title = "Experimental and numerical analysis of GTO's snubberless turn-off operations",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "231 - 241",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00092-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000925",
author = "Z. Khatir and Ph. Larguier and D. Sebille",
abstract = "The avalanche mechanism during the snubberless turn-off process of a GTO thyristor has been studied on the basis of experimental measurements in combination with numerical simulations. It has been shown that in chopper circuit and under inductive load a ‘self-controlled’ avalanche process takes place with a characteristic voltage waveform. In particular, the gate drive influences not only the storage period of the transient process but also the rate of rise of the anode voltage and the level of the generated avalanche current. For small devices, thermal stresses may be reduced owing to hard drive conditions which lower the voltage rise delay time and consequently turn-off losses."
}
@article{Busatto1996243,
title = "BMFET versus BJT in reverse bias safe operations",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "243 - 250",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00093-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000933",
author = "G. Busatto and L. Fratelli",
abstract = "An experimental comparison between the RBSOA performances of a BMFET and two families of power BJTs is presented. All the measurements were performed by means of a non-destructive tester which allowed the acquisition of a homogeneous set of measurements, keeping stray parameters under control. The behaviour of the devices is put in relation to the test conditions and it is shown that the size of the safe region of operation is a function of the geometrical parameters of the device, among which there are metallization lay-out and geometry of its elementary cell. Moreover, superior RBSOA performance of BMFET due to geometry of base diffusion, which was predicted by simulation, is experimentally confirmed."
}
@article{tagkey1996251,
title = "List of reviewer",
journal = "Microelectronics Journal",
volume = "27",
number = "2–3",
pages = "251 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90002-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900026",
key = "tagkey1996251"
}
@article{Paul1996i,
title = "Bond testing enters mainstream PCB assembly",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "i - v",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90018-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626929690018X",
author = "Paul and Walter",
abstract = "Used extensively in the semiconductor packaging industry, bond testing procedures are now being employed in PCB assembly plants for checking COB, TAB and flip chip bonding. Paul Walter explains."
}
@article{tagkey1996vi,
title = "Packaging & test",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "vi - xii",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90019-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900191",
key = "tagkey1996vi"
}
@article{JoAnn1996xiii,
title = "A hot season for MCMs",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "xiii - xvi",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90020-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900208",
author = "Jo Ann and McDonald"
}
@article{FouadAS19961,
title = "Applications of super-regenerative circuits using tunnel diodes",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "1 - 9",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00007-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000070",
author = "Fouad A.S. and Soliman",
abstract = "Theoretical and experimental analyses were carried out to analyse the tunnel diode super-regenerative amplification and detection in linear and quasi-linear modes of operation. The dependencies of the diode ac conductance, stationary voltage and correction gain factors are investigated as functions of different bias and input signal conditions. The gain in both modes of operation is computed at various circuit decrement and characteristic impedance values. Finally, the experimentally traced output waveforms of the proposed super-regenerative detector proved that the system operates well in quasi-linear mode."
}
@article{Lakhani199611,
title = "2D matrix multiplication on a 3D systolic array",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "11 - 22",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00008-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000089",
author = "Salim Lakhani and Yi Wang and Aleksander Milenković and Veljko Milutinović",
abstract = "The introduction of systolic arrays in the late 1970s had an enormous impact on the area of special purpose computing. However, most of the work so far has been done with one-dimensional and two-dimensional (2D) systolic arrays. Recent advances in three-dimensional VLSI (3D VLSI) and 3D packaging of 2D VLSI components, has made the idea of 3D systolic arrays feasible in the near future. In this paper we introduce one algorithm for 2D matrix multiplication, using a 3D systolic array. We analyze advantages and disadvantages of 3D systolic arrays in the context of the analysis algorithm. The analytical work is combined with examples and discussions of relevant details."
}
@article{Xu199623,
title = "Constructing Reed-Muller universal logic module networks from Reed-Muller binary decision diagrams",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "23 - 36",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00011-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000119",
author = "L. Xu and L. McKenzie",
abstract = "This paper presents the Reed-Muller binary decision diagram (RMBDD), an alternative means of representing generalized Reed-Muller (GRM) expansions. Particular emphasis is placed on the use of ordered Reed-Muller binary decision diagrams (ORMBDDs) as tools for constructing minimal (sub-minimal) Reed-Muller universal logic module (RM-ULM) networks. Initially, the structure of ordered Reed-Muller binary decision trees (ORMBDTs) is described and rules for reducing their size are introduced. The physical implementation of reduced ordered Reed-Muller binary decision diagrams (RORMBDDs) as RM-ULM networks is then illustrated. Additionally, a heuristic technique for determining the ordering of variables in an ORMBDD is detailed."
}
@article{Dmitruk199637,
title = "Polarization-sensitive photocurrents of metal-semiconductor structures with flat and microrelief interfaces",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "37 - 42",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00027-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000275",
author = "N.L. Dmitruk and O.Yu. Borkovskaya and O.I. Mayeva and O.V. Fursenko",
abstract = "The dependence of the polarization photosensitivity on parameters of a multilayer surface-barrier structure (SBS) (metal (Ag, Au) - intrinsic oxide - isotropic semiconductor (InP, GaAs)) with flat and microrelief interfaces has been studied. The influence of metal layer thickness on the polarimetric effect was analyzed. Both spectral and angular characteristics of the SBS polarization photosensitivity were calculated. Comparisons between the calculated angular characteristics of transmission coefficients for the light and those of the measured short-circuit photocurrent iph for several wavelengths were made. To account for a micro-relief effect on the SBS polarization photosensitivity, the equivalent film method was used. The surface polariton excitation was shown to be an additional mechanism of photosensitivity enhancement and affected its polarization sensitivity."
}
@article{Pelaz199643,
title = "Avalanche breakdown of high-voltage p-n junctions of SiC",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "43 - 51",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00056-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000569",
author = "L. Pelaz and J.L. Orantes and J. Vicente and L. Bailón and J. Barbolla",
abstract = "Design rules of p-n junctions must pay special attention to the parameters that control the electric field at the surface in order to avoid surface breakdown. Moreover, they must be compatible with the available technology. In this sense, negative bevelling has been the solution traditionally used in high-voltage diffused p-n junctions in silicon. Silicon carbide possesses a breakdown electric field one order of magnitude higher than that of silicon and this property endows this material with high-voltage capability. However, technological problems limit its potential applications. The difficulty of the diffusion process forces the production of p-n junctions by in situ doping during the growth of epitaxial layers, resulting in abrupt junctions. In this situation, negative bevelling is not very effective for lowering the electric field at the surface but reduces the breakdown voltage. On the other hand, surface charges at the oxide/semiconductor interface degrade the breakdown voltage further. Therefore, since intrinsic SiC properties run into technological limitations, it is important to evaluate the real potential for high-voltage diodes in SiC. For this purpose, the proper choice of SiC ionization coefficients is relevant."
}
@article{Yamada199653,
title = "Growth of CuGaSe2 film by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "53 - 58",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00076-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000763",
author = "Akimasa Yamada and Yunosuke Makita and Shigeru Niki and Akira Obara and Paul Fons and Hajime Shibata",
abstract = "CuGaSe films of different composition prepared by MBE technique were examined by reflection high energy electron diffraction, electron probe for micro analysis, X-ray diffraction and photoluminescence. The valence stoichiometry of the films is fulfilled at unity molecularity, showing that CuGaSe2 is possible to be grown by MBE. The valence stoichiometry is almost conserved in a wide range of molecularity of the films. It is proven that the films have chalcopyrite structure over a remarkably wide range of Cu-rich composition and that the CuGaSe2 films are epitaxially grown with the c-axis perpendicular to the (001) plane of GaAs substrate. The low temperature photoluminescence on epitaxially grown films of nearly stoichiometric and Cu-rich composition show sharp emission peaks at 1.71 eV attributed to exciton recombination, indicating that the film quality is rather high."
}
@article{Collins199659,
title = "A study of composite Bi2O3, In2O3 and RuO2 planar thick film piezoresistive gauges",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "59 - 65",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00096-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000968",
author = "D.G. Collins and K.I. Arshak",
abstract = "The physical and thermal properties of thick film planar piezoresistive gauges based on composites of bismuth, indium and ruthenium oxides are presented. Various strain gauge characteristics are analysed, including linearity, hysteresis, stability and reproducibility. It is shown that the strain sensitivity of the thick film gauges is directly dependent on the molar percentages of the pastes' functional ingredients, where the measured gauge factor increases from 7 to 17 with increasing Bi2O3 content. Tests carried out on the thermal properties of the fired films exhibited negative temperature coefficients of resistance which, combined with other pertinent electrical and optical studies, indicate the dominance of hopping or tunnelling conduction at high fields."
}
@article{Badila199667,
title = "Double epitaxial layer power Schottky diodes with end in the ramp oxide technique",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "67 - 72",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00023-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000232",
author = "Marian Badila and Gheorghe Brezeanu",
abstract = "The paper reports a new power Schottky diode (PSD) structure, with a double epitaxial layer and oxide ramp edge. This structure was designed to enhance the forward current capability and the resilience to reverse current transient pulses of the PSD with only minor decreases in the maximum working reverse voltage capability (VRWM). Two different metallization types for the Schottky contact were investigated, namely: Ti:Al for devices intended for operation with Tjmax = 150°C and Cr:Ni:Ag for diodes with Tjmax = 125°C, respectively."
}
@article{Matsuo199673,
title = "Higher-integrated spread-type stacked capacitor and its suitable arsenic solid-diffusion method",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "73 - 77",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00024-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000240",
author = "N. Matsuo and T. Miyoshi and K. Matsubara",
abstract = "The structure of the spread stacked capacitor corresponding to higher integration and the relationship between the electric field at the edge of the storage electrode and its curvature are examined. The controllability of the arsenic planar-type solid-diffusion method at 4.0 Torr by changing the oxygen flow rate, and its feasibility to fabricate the capacitor for 1 Gb DRAM and beyond are discussed."
}
@article{G199679,
title = "Frequency behaviour of the Wilson and improved Wilson MOS current mirrors: analysis and design strategies",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "79 - 85",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00055-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000550",
author = "G. and Palumbo",
abstract = "This paper presents two optimized designs for the Wilson and improved Wilson MOS current mirrors. The paper includes a detailed analysis of the high-frequency behaviour of the Wilson and improved Wilson MOS current mirrors, which shows a current transfer function with two poles and one zero. The two optimized designs lead to a response which is better than that of the simple current mirror."
}
@article{Nikolić199687,
title = "Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "87 - 92",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00057-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000577",
author = "P.M. Nikolić and Z. Ristovski and S. Đurić and V. Blagojević and M.D. Dramićanin and D. Siapkas and T.T. Zorba and M. Henini",
abstract = "Far infrared and mid infrared reflectivity measurements for a GaAs/Al0.33Ga0.67As superlattice structure were made at room temperature and analyzed using a modified model developed by Scamarcio et al. (Phys. Rev. B, 43 (1991) 14754). A far infrared reflectivity (FIR) diagram of the superlattice was characterized by GaAs and AlAs ‘Reststrahlen’ bands and Al.33Ga.67As modes which were very close to the substrate modes.
The individual layer thicknesses of the investigated superlattice were calculated using optical reflectivity measurements."
}
@article{Nikolić199693,
title = "The dependence of the work function of rare earth metals on their electron structure",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "93 - 96",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00097-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000976",
author = "M.V. Nikolić and S.M. Radić and V. Minić and M.M. Ristić",
abstract = "The work function primarily depends on the electron structure of the analysed material. Having in mind the importance of rare earth metals in advanced electronics, in this paper the dependence of the work function of rare earth metals on their electron structure has been analysed. It is shown that dependencies of work functions on the number of electrons of the most stable f7 and f14 configurations can be established for the series CeSm and GdTm."
}
@article{AF199697,
title = "ALEX: a tool-independent ASIC library format",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "97 - 99",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00078-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500078X",
author = "A.F. and Page",
abstract = "A perennial problem for the electronics designer and ASIC vendor alike has been the availability of libraries to support design tools. The situation is becoming worse, since more tools are now involved in a typical ASIC design cycle and all require library data. Even within one EDA vendor there can sometimes exist several tools requiring different libraries, although much of the information that needs to be provided is common between similar tools.
This is the situation within the Viewlogic company, and an internal solution to the problem has been developed which has now been passed into the public domain for possible adoption by other EDA companies, free of any charge. In addition, the library format has been offered as a prototype standard to the European CAD Standard Initiative (ECSI) to aid efforts by the organization to define a standard library format for ASIC design.
This library format is known as ASIC Library Exchange or ALEX, and is designed to contain all the data required by ASIC design tools contained within an information model (IM) and accessed via a procedural interface (PI). The information to build the IM is taken from existing tool libraries, or the ASIC vendors ‘golden’ database using translators created with the PI. Once data are in the IM, a variety of output translators are used to generate information for specific tools, the advantage of this approach being that much common data are used by different tools and a central storage medium removes the necessity to store redundant information for more than one tool. The task of keeping different libraries in step is also greatly reduced."
}
@article{S1996101,
title = "Computational modeling in semiconductor processing: M. Meyyappan (ed.), Artech House, Boston/London, 1995, 363 pp.",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "101 - 102",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90012-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900129",
author = "S. and Mijalković"
}
@article{M1996102,
title = "Properties of strained and relaxed silicon germanium: Erich Kasper (ed.), INSPEC, The Institution of Electrical Engineers, London, UK, ISBN: 0-85296-826-4",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "102 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90013-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900130",
author = "M. and Henini"
}
@article{MS1996102,
title = "MMIC design: I.D. Robertson (ed.), Institution of Electrical Engineers, London, Circuit and Systems Series, No. 7, 1995, 520 pp., £49.00",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "102 - 103",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90014-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900142",
author = "M.S. and Harris"
}
@article{M1996103,
title = "On optical interconnections for VLSI: A.B. Kahng and G. Robins, Kluwer Academic Publishers, Norwell, MA, 1995, 286 pp., ISBN: 0-7923-9483-6 US$175.00, £63.75, D.fl. 175.00",
journal = "Microelectronics Journal",
volume = "27",
number = "1",
pages = "103 - ",
year = "1996",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(96)90015-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269296900154",
author = "M. and Harris"
}
@article{tagkey1995i,
title = "Device update",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "i - x",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90026-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900268",
key = "tagkey1995i"
}
@article{Lassig1995xi,
title = "Intermetal dielectric deposition by electron cyclotron resonance chemical vapor deposition (ECR CVD)",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "xi - xxiii",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(96)81856-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269296818568",
author = "Stephan E. Lassig and James D. Tucker",
abstract = "Advanced microprocessor and logic devices require multiple levels of metal to interconnect the many transistors that form them. Three-, four-, and five level metallization schemes are in production. The insulating material between these layers must fill very narrow gaps, without voids or seams, with a high quality dielectric, and must allow for subsequent global planarization such as chemical mechanical polishing (CMP). These requirements can be met with ECR CVD of silicon dioxide. ECR deposits high quality SiO2 dielectric in a single wafer process that fills gaps 0.3 μm and smaller at aspect ratios 3:1 and greater on 200 mm wafers. Its electrical, optical, and chemical properties approach those of thermal oxide."
}
@article{M1995737,
title = "Introduction to the 1st International Workshop on growth, characterization and exploitation of epitaxial III–V compound semiconductor on novel index surfaces",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "737 - 738",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00030-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000305",
author = "M. and Henini"
}
@article{Henini1995739,
title = "Quantum transport of p-type GaAs/(AlGa)As heterostructures grown on non-(100) substrates by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "739 - 744",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00031-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000313",
author = "M. Henini and P.A. Crump and P.J. Rodgers and B.L. Gallagher",
abstract = "We report on a series of Be-doped GaAs/(AlGa)As two-dimensional hole gas (2DHG) structures grown on (110), (111)B, (211)B and (311)B oriented substrates and compare their properties with high mobility samples grown on (311)A using Si doping. The samples were prepared and grown under the same conditions in order to render them comparable. They are found to have mobilities which are strongly anisotropic within the plane. All the samples show strong low-field positive magnetoresistance with resistance increases of up to 30% at magnetic fields of only 0.1 T. The presence of this feature on all the different planes shows that it does not depend upon the details of the band structure. It is identified with the lifting of the degeneracy of the spin sub-bands by the asymmetrical potential giving rise to a classical two-band magnetoresistance.
The modulation-doped GaAs/(AlGa)As heterostructures grown on the (311)A GaAs surface using silicon as the acceptor produced 2DHGs with low-temperature hole mobility exceeding 1.2 × 106 cm2 V−1 s−1 with carrier concentrations as low as 0.8 × 1011 cm−2. This hole mobility is the highest ever observed at such low densities by any growth technique. These 2DHG samples show for the first time the persistent photoconductivity effect. This effect is normally absent in 2DHG systems. An analysis of the number density and temperature dependence of the mobility leads us to conclude that the mobility is limited by phonon scattering above ∼ 4 K and interface scattering at lower temperatures."
}
@article{Los1995745,
title = "Valence band structure of (001), (012), (011), (111), (112), (113) GaAsAlGaAs quantum wells",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "745 - 749",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00032-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000321",
author = "J. Los and A. Fasolino and A. Catellani",
abstract = "We present a detailed theoretical study of the in-plane dispersion of the spin-orbit coupled valence band of GaAsAlGaAs quantum wells grown along the low-index directions (001), (011), (012), (111), (112) and (113). We find that the confinement energies, warping, effective in-plane masses and hole mixing strongly depend on the direction of confinement. Beside the numerical approach, we have developed a perturbative scheme which is able to predict qualitative trends for confinement energies and in-plane effective masses."
}
@article{Domínguez1995751,
title = "A mathematical model for epitaxial growth on nonplanar substrates",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "751 - 757",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00033-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500033X",
author = "Pablo S. Domínguez and F. Briones",
abstract = "A new mathematical model devised to simulate growth on patterned substrates is described. Its aim is not to predict the evolution of the shape of any substrate during epitaxy, but to determine the value of the different kinetic parameters involved in the growth (mean lifetime before incorporation or desorption, surface diffusion length and diffusion coefficient of group III adatoms on the various crystalline facets), just by fitting the output of the program to the experimental epitaxial growth results. A simulation of GaAs MBE growth on a patterned substrate is included as an illustration of its operation."
}
@article{Johnston1995759,
title = "Effect of As overpressure on Si-doped (111)A, (211)A and (311)A GaAs grown by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "759 - 765",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00034-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000348",
author = "D. Johnston and L. Pavesi and M. Henini",
abstract = "Si-doped (111)A, (211)A and (311)A GaAs samples grown by molecular beam epitaxy (MBE) at different As over-pressures have been studied. Hall effect measurements have revealed that the doping changes from p- to n-type when the As pressure is increased. The transition As pressure is lower for the (211)A than for the (311)A surfaces. Photo-luminescence measurements have shown that, when the As pressure is increased, arsenic vacancy defects are changed into pairs of Ga vacancy and Ga antisite defects. These results are explained by considering the orientation dependence of the surface bonding and the kinetics of the MBE growth process."
}
@article{Sørensen1995767,
title = "MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "767 - 773",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00035-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000356",
author = "C.B. Sørensen and H. Gislason and D. Birkedal and J.M. Hvam",
abstract = "An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si δ-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples.
The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV."
}
@article{García1995775,
title = "Growth optimization and optical properties of GaAs-(Ga,Al)As quantum well structures on UV-ozone prepared nominal (111)B GaAs surfaces",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "775 - 781",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00036-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000364",
author = "B.J. García and C. Fontaine and W.W. Rühle and J. Collet and A. Ponchet",
abstract = "GaAs and (Ga,Al)AsGaAs quantum well (QW) structures have been grown by molecular beam epitaxy on nominal (111)B oriented GaAs substrates. The substrate preparation technique involving UV-ozone oxidation was observed to lead to a rough surface after oxide desorption. Mirror-like layer surfaces have nevertheless been achieved by applying a careful procedure during the first stages of growth in order to recover surface flatness. New evidence of planarization is presented, based on the frequency analysis of reflection high-energy electron diffraction (RHEED) intensity oscillations during growth. QWs grown at a moderate substrate temperature (about 610°C) have been obtained with sharp excitonic transitions whose photoluminescence (PL) emission linewidths are comparable to those obtained on misoriented (111)B substrates. In contrast, the use of higher substrate temperatures was found to provide rougher interfaces due to GaAs sublimation during growth interruption at each interface, as revealed by continuous wave and time-resolved PL measurements."
}
@article{Ponchet1995783,
title = "Stability of (114) and (114) facets in III–V compounds under usual MBE conditions",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "783 - 788",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00037-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000372",
author = "A. Ponchet and A. Le Corre and A. Godefroy and S. Salaün and A. Poudoulec",
abstract = "Tensile GaInAs layers grown by MBE on InP(001) with lattice mismatch of −0.5% to −1.7% have been examined by transmission electron mictoscopy (TEM). Elastic relaxation occurs by drastic thickness modulations which are built first on (114) and (114) facets, then on (113) and (113) facets. Many examples of spontaneous development of (114) facets from (001) surface have also been reported by other groups. This is observed under usual MBE conditions and for various chemical compositions and lattice mismatches, positive as well as negative, for instance in compressively strained (Ga)InAs islands grown on GaAs(001) or InP(001).
This is discussed in terms of surface reconstruction. It is suggested that (114) and (114) facets could be reconstructed in a way very similar to the usual 2 × 4 reconstruction of the (001) GaAsAs surface which is considered very stable. This is due to their crystallographic structure which involves exactly two gallium steps per 2 × 4 unit cell."
}
@article{Puech1995789,
title = "MBE growth and Raman analysis of [hhk]GaAs/(Si or CaF2) highly strained hetero-structures",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "789 - 795",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00038-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000380",
author = "P. Puech and E. Daran and G. Landa and C. Fontaine and P.S. Pizani and R. Carles",
abstract = "Highly strained GaAs layers have been grown by molecular beam epitaxy on (100)-, (111)- or (112)-oriented Si or CaF2 substrates. The origin, sign, bisotropic nature, value, homogeneity and relaxation of the built-in strain have been studied by Raman spectroscopy. Specific measurements have been performed by using selection rules and line shape analysis over a wide temperature range."
}
@article{Attolini1995797,
title = "Raman scattering in (111) strained heterostructures",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "797 - 804",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00039-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000399",
author = "G. Attolini and C. Pelosi and S. Gennari and P.P. Lottici and F. Ricco and M. Allegrini and C. Frediani and M. Labardi",
abstract = "III–V based strained heterostructures grown along [hhk] directions are considered. The proportionality coefficients between the in-plane strain and the shift in the TO and LO phonon frequencies have been calculated from the elastic constants and phonon deformation potentials. GaAs/GaP (111) and GaAs/InP (111) systems, where the GaAs epitaxial layers are in compressive or tensile strain, respectively, have been grown by MOVPE at different times on A and B substrates and investigated by Raman scattering. The corresponding red or blue shifts of the frequencies of the LO and TO phonons are measured and the residual strain parallel to the interface is estimated. The Raman results are discussed on the basis of the morphology of the epilayer investigated by atomic force microscopy."
}
@article{Hopkinson1995805,
title = "InxGa1−xAs/InP quantum well structures grown on [111]B InP",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "805 - 810",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00040-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000402",
author = "M. Hopkinson and J.P.R. David and E.A. Khoo and A.S. Pabla and J. Woodhead and G.J. Rees",
abstract = "We report growth and characterization details of lattice matched and coherently strained InxGa1−xAs/InP quantum well structures grown on misoriented [111]B InP substrates. Photoluminescence from a range of such structures, grown on substrates with optimum misorientation, show linewidths as good or better than equivalent [100] layers. Multiquantum well (MQW) samples with relatively modest compressive strain show X-ray diffraction data characteristic of highly uniform pseudomorphic quantum wells. With increased strain (x = 0.63), relaxation is evident through a degradation of the diffracted peak widths and through the observation of defects in the surface morphology. Fabricated strained p-i(MQW)-n diode structures exhibit low reverse leakage current densities (e.g. j = 6 μA/cm2). Room temperature photocurrent measurements on these devices show a strong excitonic blue shift (15 nm) with applied bias, as a consequence of the built-in piezoelectric field. The rate of peak shift, up to 8 nm/V, demonstrates excellent potential for low voltage optical modulator applications at around 1.55 μm wavelength."
}
@article{Grey1995811,
title = "Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "811 - 820",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00041-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000410",
author = "R. Grey and J.P.R. David and G. Hill and A.S. Pabla and M.A. Pate and G.J. Rees and P.N. Robson and P.J. Rodriguez-Girones and T.E. Sale and J. Woodhead and T.A. Fisher and R.A. Hogg and D.J. Mowbray and M.S. Skolnick and D.M. Whittaker and A.R.K. Willcox",
abstract = "Pseudomorphically strained InGaAs/GaAs quantum wells grown on [111]B oriented GaAs substrates incorporate strong piezoelectric fields. Quantum confined interband optical transitions exhibit built-in Stark shifts to the red and additional, ‘forbidden’ transitions are observed because of the reduced symmetry. The novel properties of these structures can be exploited in such devices as electro-optic modulators with increased sensitivity, blue-shifting self electro-optic effect devices (SEEDs) with enhanced contrast, all-optical symmetric SEEDs (SSEEDs) and pseudomorphic high electron mobility transistors (HEMTs) with increased two-dimensional electron gas (2DEG) densities. At all stages of research, development and production successful device work necessitates reliable material growth of good crystalline quality. High quality material is routinely obtained for wafers misoriented towards 〈211〉. For substrates misoriented towards the 〈211〉 direction good quality material can also be achieved, but only when great care is taken to ensure that growth is carried out within the narrower optimum growth window. With the help of this understanding we have been able to produce devices which have been used successfully to observe the predicted improvements."
}
@article{Calle1995821,
title = "Optical characterization of [111]B InGaAs layers",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "821 - 826",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00042-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000429",
author = "F. Calle and A. Sacedón and A.L. Alvarez and E. Calleja and E. Muño and H.G. Colson and P. Kidd",
abstract = "Strain assessment of [111]B InGaAs/GaAs layers, of several compositions and variable thicknesses, has been performed by photoluminescence and Raman spectroscopies. Both the gap energy and GaAs-like LO frequency undergo a blue shift proportional to the residual strain, which can be thus determined. The critical layer thickness for [111]B orientation is found to be three times larger than for [001] layers grown simultaneously. In addition, two kinds of inhomogeneities in the relaxation are found: strain domains, demonstrated by the spectral and spatial resolution of photoluminescence excitation, micro-photoluminescence and micro-Raman experiments; and a change in the strain release with layer depth, obtained by Raman at different excitation energies."
}
@article{Berger1995827,
title = "Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "827 - 833",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00043-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000437",
author = "P.D. Berger and C. Bru and Y. Baltagi and T. Benyattou and M. Berenguer and G. Guillot and X. Marcadet and J. Nagle",
abstract = "Photoreflectance (PR) measurements were performed on specific structures grown by molecular-beam epitaxy on different substrate orientations: 〈111〉B, 〈111〉B 2° off, 〈111〉A and 〈100〉. A strained In0.2Ga0.8As quantum well was grown in the space charge layer of an undoped GaAs layer. On a polar substrate orientation 〈111〉, the strain-induced piezoelectric field in the quantum well modifies the field in the space charge layer. PR spectra recorded in such structures exhibit Franz Keldysh oscillations from which we can measure the internal electric field. The piezoelectric field is then deduced from a comparison between two structures differing only by the presence of the strained quantum well. Experimental values ranged between 110 kV/cm and 150 kV/cm, and were used to determine experimentally the piezoelectric constant e14 in In0.2Ga0.8As."
}
@article{DeCaro1995835,
title = "Piezoelectric fields in one- and two-dimensional heterostructures fabricated on high-index surfaces",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "835 - 840",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00044-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000445",
author = "Liberato De Caro and Leander Tapfer",
abstract = "We present a theoretical study of the strain-induced piezoelectric fields which may occur in one- and two-dimensional III–V compound semiconductor heterostructures on high-index surfaces. The strain tensor components of the low-dimensional structures are calculated by minimization of the strain-energy density and by imposing appropriate constraints at the heterointerfaces. We obtain a tetragonal deformation for two-dimensional heterostructures grown on the high symmetry surfaces, while in the case of high-index surface orientations a monoclinic lattice deformation is obtained. For the one-dimensional heterostructures, which are fabricated from superlattices grown on thick substrate crystals and are laterally confined by air, a lower symmetry lattice deformation than a tetragonal one may also occur for the [001]-substrate orientation, as a result of the anisotropic elastic lattice relaxation. In zincblende heterostructures, these particular strain fields can generate high internal electric fields. In two-dimensional heterostructures, these piezoelectric fields appear for the [111] or for higher-index interface orientations. However, in one-dimensional heterostructures the strain fields can generate high piezoelectric fields even for the high-symmetry [001]-interface orientation."
}
@article{JP1995841,
title = "Molecular beam epitaxy of AlGaInAs on patterned InP substrates for optoelectronic applications",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "841 - 852",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00045-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000453",
author = "J.P. and Praseuth",
abstract = "In this paper, we present the potentiality of the AlGaInAs quaternary alloy system grown by molecular beam epitaxy on non-planar InP substrates. Cross-sectional scanning electron microscopy pictures were used to study the growth behaviour of such a system on various etched profiles achieved by either wet chemical etching or reactive ion etching: V-groove, mesa or rectangular well. A recess surface preparation procedure prior to regrowth was optimized. Embedded PIN photodiodes were fabricated with similar characteristics as those obtained on planar commercial substrates. Planar monolithic integrated PIN-pair and PIN-HFET have also been fabricated."
}
@article{Tejedor1995853,
title = "Fabrication of patterned (311)A GaAs substrates by ArF laser-assisted Cl2 etching",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "853 - 859",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00046-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000461",
author = "Paloma Tejedor and Pablo S. Domínguez",
abstract = "Patterning of (311)A GaAs substrates using ArF laser-assisted Cl2 etching has been demonstrated and the reaction mechanism investigated as a function of the most relevant process parameters. The etch reaction kinetics have been found to be first order in Cl2 in the 1 × 10−3 Torr to 6 × 10−3 Torr pressure range. At temperatures below 200°C, the etch reaction is kinetically controlled by the formation of the intermediate species GaCl2 via a Langmuir-Rideal mechanism, with an activation energy of 7.9 kcal/mol. Above 200°C, the etch process becomes predominantly diffusion controlled. Finally, a kinetic polar diagram of etch rate versus crystallographic orientation obtained from Cl2 etching experiments of (001) GaAs masked with stripes along the [110] and [110] directions has been used to predict the etch profiles of (113)A-oriented GaAs masked along the [110] direction."
}
@article{Brandt1995861,
title = "Coherently strained InAs insertions in GaAs: do they form quantum wires and dots?",
journal = "Microelectronics Journal",
volume = "26",
number = "8",
pages = "861 - 870",
year = "1995",
note = "Novel Index Semiconductor Surfaces",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00047-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929500047X",
author = "Oliver Brandt and Matthias Ilg and Klaus Ploog",
abstract = "Coherently strained InAs insertions in a GaAs matrix are expected to exhibit ‘quantum-wire-like’ or ‘quantum-dot-like’ behavior for two regimes of InAs coverage. Firstly, when depositing submonolayer InAs films on vicinal GaAs surfaces forming regular steps, an ordered array of InAs aggregates is obtained whose lateral size is given by the step density and whose size distribution is determined by the homogeneity of the step distribution of the initial surface. Secondly, when exceeding a certain InAs coverage (≅ 2 monolayers), a morphological phase transformation occurs which results in the formation of three-dimensional InAs islands having sizes compatible with the quantum-confinement of excitons. In this review, we present experimental results for InAs insertions in GaAs for both coverage regimes. Particular emphasis is put on the evaluation of the actual structural and compositional configuration of the InAs insertions in the final heterostructure. It is demonstrated that such an evaluation is stringently required for a correct interpretation of the optical properties of the structure."
}
@article{Keith1995i,
title = "UTP: lower bond loop height — problems & alternatives",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "i - v",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90061-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900616",
author = "Keith and Gurnett",
abstract = "With the technology drive to ultra thin packages (UTP) forced by the demand of assemblies such as Smart Card, PCMCIA units, and MCMs, the emphasis is being placed on the interconnect between the die and its interconnection system. Until these pressures arose, the majority of IC manufacture used the wire bonding process for this interconnect, which, in its standard form, has assumed the same commanding role in the die interconnect that the solder joint has in electronic assembly. As shown in a previous feature (Microelectronics Journal Vol. 25, No. 8) bond loop height is one of the dominating parameters in reducing the thickness of the ultra thin package. What are the problems of lowering the bond loop height and what are the alternatives?"
}
@article{tagkey1995vi,
title = "Displays update",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "vi - viii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90062-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900624",
key = "tagkey1995vi"
}
@article{tagkey1995ix,
title = "Memory update",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "ix - xiv",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90063-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900632",
key = "tagkey1995ix"
}
@article{tagkey1995xv,
title = "Electrotech expands and develops new technology and techniques",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "xv - xvi",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90064-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900640",
key = "tagkey1995xv",
abstract = "UK-based semiconductor equipment manufacturer, Electrotech, has announced plans to expand into a new headquarters and manufacturing site. The new site at the Coldra, near Newport in South Wales, was purpose-built for the electronics industry, and was formerly occupied by Inmos. Electrotech is investing $3m in the newfacilities, which will provide an additional 102 000 sq ft of manufacturing and office space. The phased move to the Coldra is planned to take place during 1995."
}
@article{Rabaey1995579,
title = "Impact of new chip technologies on telecommunications",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "579 - 593",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90021-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929590021W",
author = "Dirk Rabaey and Josiane Vandenbroeck",
abstract = "Microelectronics has dramatically changed the architecture and design concepts of telecommunications products. Its strength is based on the successful combination of three different disciplines: technology, design automation and device architecture. The evolution in these areas will be described and illustrated with several examples of telecommunications applications in the three main business segments of the telecommunications market: switching, transmission and end-user systems. Telecommunications reliability requirements and their impact on the requirements for the technologies are discussed. Finally, the evolution of telecommunications products is described, followed by a brief discussion of future technology trends."
}
@article{Konijnenburg1995635,
title = "Automatic test pattern generation for industrial circuits with restrictors",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "635 - 645",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00005-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000053",
author = "M.H. Konijnenburg and J.Th. van der Linden and A.J. van de Goor",
abstract = "This paper extends state-of-the-art automatic test pattern generation (ATPG) systems by including constraints, called restrictors, on the allowable values of the bits of a test pattern. Such restrictors often occur in industrial circuits where certain combinations of bit positions of a test pattern have to take on a particular value (e.g. in the case of a reset line) or are prohibited from taking on a particular value (e.g. in order to prevent an illegal state to be entered) (F. Hapke and R. Reche, Amsal reference manual, Technical Report, Philips GmbH, Hamburg, 1989). This paper describes the types of restrictors, as encountered in industrial circuits; it shows the required modifications to ATPG algorithms for stuck-at faults in circuits; in order to cope with restrictors and, finally, the results of experiments determining the consequences for the ATPG time and fault coverage are given. The overall conclusions are: restrictors can easily be implemented in any ATPG system; the use of restrictors is essential in industrial circuits; the influence of restrictors on the ATPG time is small, while a new class of “redundant faults” is identified, belonging to that part of the circuit which cannot be tested due to the specified restrictors."
}
@article{Sarkar1995647,
title = "I–V characteristics of the lambda bipolar transistor",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "647 - 652",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00009-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000097",
author = "Manju Sarkar and M. Satyam and A. Prabhakar",
abstract = "The original do model of the lambda bipolar transistor proposed and the important device parameters characterized thereby are under the constraints of several approximations. It is shown to be adequate for base current drives higher than 10 μA and for devices with high values of threshold voltages. The present study provides experimental data on such devices with lower values of threshold voltages and shows them working at base current drives as low as 0.1 nA, and that these can be operated with lower supply voltages such as s V or less. These features can be exploited for suitable circuit applications. The do model of the device under these conditions needs to be suitably revised, and the issues for consideration have been identified."
}
@article{Chin1995653,
title = "Electron mobility in InO.53GaO.47As as a function of concentration and temperature",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "653 - 657",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00010-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929500010F",
author = "V.W.L. Chin and T. Osotchan and T.L. Tansley",
abstract = "The electron mobility in In0.53Ga0.47As as a function of temperature has been calculated by the variational principle over a carrier concentration range of 1 × 1014 to 1 × 1018 cm−3 with compensation ratio as a parameter. We show that these results, which fit experimental data, can be well represented by a simple analytical function. We also give the fit coefficients for this expression as a function of temperature for various compensation ratios which may facilitate device modelling."
}
@article{Farhad1995659,
title = "Survey of selfclocked controllers",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "659 - 682",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00006-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000064",
author = "Farhad and Aghdasi",
abstract = "This paper presents a review of the research carried out over the past three decades in the area of self-clocked asynchronous sequential circuits, and provides an extensive list of the published materials in this field. It points out the shortcomings of the earlier methods and directs attention to new design techniques more suitable for implementation using standard components as well as in semi-custom or VLSI technology."
}
@article{Özcan1995683,
title = "A new method aimed at reducing harmonic distortion in active-loaded BJT amplifiers",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "683 - 689",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00026-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929500026E",
author = "Sadri Özcan and Hakan Kuntman",
abstract = "In this paper, a new method is proposed which renders possible shifting of the optimum operating point for total harmonic distortion to any desired point on the do transfer characteristic of active-loaded bipolar junction transistor amplifiers, by incorporating an additional current source into the circuit to obtain different do current levels in driver and load transistors. A new analytical expression is derived to calculate the amount of additional current. Furthermore, two new circuit topologies are introduced for harmonic distortion reduction, which will be used according to the flow direction of the additional current."
}
@article{ChunLiHou|ChunChiehChen|ChungMingHwang|JeanShinWu1995691,
title = "Switched-OTA technique for floating immittance function simulators",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "691 - 695",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00028-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929500028G",
author = "Chun-Li Hou and Chun-Chieh Chen and Chung-Ming Hwang and Jean-Shin Wu",
abstract = "A generalized scheme for realizing switched-OTA floating immittance function simulators is proposed. The switched-OTA technique combines the accuracy of an analogue discrete time processor with the linear tunability of continuous-time OTAs. The technique can be applied to synthesize a tunable precision sampled-data immittance convertor."
}
@article{RJ1995697,
title = "A review of radiation effects in InP solar cells",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "697 - 704",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00052-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929500052J",
author = "R.J. and Walters"
}
@article{Gorelenok1995705,
title = "Rare-earth elements in the technology of InP, InGaAsP and devices based on these semiconductor compounds",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "705 - 723",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00053-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929500053K",
author = "A.T. Gorelenok and A.V. Kamanin and N.M. Shmidt",
abstract = "The results are reported of our investigations into the application of rare-earth elements in the liquid phase epitaxy technology of InP, InGaAsP and devices based on these semiconductor compounds. Reference is made to two-dimensional electron gas structures, MIS-structures, Schottky barriers, photoresistors, p-i-n photodiodes, Schottky-gate FET, phototransistors, vertical photo-FETs and others."
}
@article{NA1995725,
title = "Silicon doping by erbium to create light-emitting structures",
journal = "Microelectronics Journal",
volume = "26",
number = "7",
pages = "725 - 735",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00054-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929500054L",
author = "N.A and Sobolev",
abstract = "This paper presents an overview of the current state of fabrication technology of Er-doped Si and investigates its optical, electrical and structural properties. Tasks for further research into light-emitting Si:Er structures are formulated."
}
@article{tagkey1995i,
title = "Design update",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "i - v",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90028-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900284",
key = "tagkey1995i"
}
@article{tagkey1995vi,
title = "SEMICON West 95",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "vi - x",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90029-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900292",
key = "tagkey1995vi"
}
@article{tagkey1995xi,
title = "Microelectronics technique allows switched reluctance motors to perform as “sensor-less” servos",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "xi - xiii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90030-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900306",
key = "tagkey1995xi"
}
@article{tagkey1995xiv,
title = "Rood Technology expands and launches COB programme",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "xiv - xvi",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90031-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900314",
key = "tagkey1995xiv"
}
@article{Pal1995507,
title = "Modelling of silicon epitaxy using silicon tetrachloride as the source",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "507 - 514",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00012-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000127",
author = "D.K. Pal and M.K. Kowar and A.N. Daw and P. Roy",
abstract = "A growth-rate model, based on chemical kinetics for vapour phase epitaxy (VPE) of silicon by decomposition of SiCl4 in a horizontal rectangular reactor at atmospheric pressure, has been developed. The model incorporates the dependence of growth rate on various physical and geometrical parameters, such as temperature, flow rate, mole fraction, position, etc. The results of simulation under appropriate conditions have been found to be in very good agreement with the experimental data available in the literature. Using these data, it has been possible to determine the values of the various rate constants involved in this model."
}
@article{MuhammadTaher1995515,
title = "An approximate analysis and its application to the nonlinear performance of three MOSFET transconductance amplifiers",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "515 - 523",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00013-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000138",
author = "Muhammad Taher and Abuelma'atti",
abstract = "A simple procedure for approximating the input-output characteristic of nonlinear electronic circuits is presented. Using this procedure, closed-form analytical expressions, in terms of the ordinary Bessel functions, are obtained for the output spectra of a nonlinear electronic circuit resulting from a multisinusoidal input. Using these expressions, the nonlinear performance of three basic MOSFET transconductance amplifiers is considered in an attempt to determine the transistor parameters for best linearity."
}
@article{WenyiZhou|Xu1995525,
title = "Numerical studies of large-signal power characteristics of AlGaAs/GaAs heterojunction bipolar transistors",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "525 - 533",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00014-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000149",
author = "Wen-yi Zhou and J. Xu and Y.B. Liou and C. Huang",
abstract = "The class B large-signal power characteristics of AlGaAs/GaAs heterojunction bipolar transistors are simulated using a one-dimensional model. The effects of various kinds of structure with uniform base, bandgap graded base and doping graded base on power characteristics are studied. It is found that the power gain reaches a maximum value at a moderate level of Al mole fraction x = 0.1 at the base-emitter metallurgical boundary. To maintain the average base doping constant, the power gain is increased with the graded exponent due to the reduced input power and the slightly increased output power for a given input signal. Based on the assumption of uniform heat distribution over the device, the self-heating effects on power characteristics are also investigated. It is shown that if the mismatching problem between the device and its external circuits is not considered and the temperature dependence of the electron mobility is taken as unαT−0.2, a rise of temperature leads to an increase in the output power, which is opposite to the results of the current gain in dc steady-state."
}
@article{Board1995535,
title = "Analysis and characteristics of bulk-inverted narrow-gate trench IGBTs",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "535 - 542",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00015-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929500015A",
author = "K. Board and Z.R. Hu",
abstract = "An IGBT-like device structure is proposed, in which very high current densities can be achieved without loss of gate control. A bulk-inversion condition is maintained to obtain a very low on-resistance through the small cell-width achievable and the full conductivity modulation of the channel region. The need for a double diffusion to form the MOS channel region is removed, but closely spaced trenches are necessary to implement the structure."
}
@article{Victor1995543,
title = "Signal processing in the sigma-delta domain",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "543 - 562",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00016-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929500016B",
author = "Victor and da Fonte Dias",
abstract = "Sigma-delta (ΣΔ) has been widely used to convert signals between analogue and digital [1]. Some authors propose the extension of this technique to implement analogue and digital filters, amplitude and phase modulators, correlators, adders, compandors, expandors, digital synthesizers, oscillators, phase-locked loops and frequency discriminators, power drivers, etc. This paper is in line with these non-standard applications, and proposes that ΣΔ be seen as a complementary domain for signal processing in parallel with continuous-time (CT), sampled-data (SD) and digital (D). The interface blocks are introduced, as well as the operators available for either sigma-delta or mixed signal processing. Sigma-delta signals are easy to handle, but have reduced processing capabilities. Mixed processing is possible without requiring interface circuitry and with significant savings in algorithms and hardware. Design examples of sigma-delta adder, multiplier, compandor, expandor, automatic gain control, direct digital synthesizer, oscillator and phase-locked loop circuits are given."
}
@article{Rathi1995563,
title = "The dependence of etch rate of photo-CVD silicon nitride films on NH4F content in buffered HF",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "563 - 567",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00017-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929500017C",
author = "V.K. Rathi and Manju Gupta and O.P. Agnihotri",
abstract = "The influence was studied of the concentration of ammonium fluoride (NH4F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method. The composition of the buffered HF was varied between 0 and 40 weight percent (wt%) NH4F with 2 to 12wt% hydrofluoric acid (HF). The etch rates as a function of buffered HF composition were measured for films deposited under various process parameters, viz. reactant gas ratio, substrate temperature and chamber pressure. The results of etch rates as a function of process parameters were correlated to variations in material density and silicon content (Si/N ratio) in the films."
}
@article{Ganesh1995569,
title = "Artificial neural networks as aids in circuit design",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "569 - 578",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00019-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929500019E",
author = "Ganesh and Kothapalli",
abstract = "This paper introduces the application of software implementations of artificial neural networks in the design of microelectronic circuits. The device dimensions of CMOS transistors can be easily obtained from trained artificial neural networks. Data generated by circuit simulation programs such as SPICE or calculations using circuit formulae such as those presented in this paper can be used to train the artificial neural networks. An example of the design of an operational transconductance amplifier using this method is presented. Supervised learning in multilayer feedforward neural networks using the so-called back-propagation algorithm is used to demonstrate the method."
}
@article{Rabaey1995579,
title = "Impact of new chip technologies on telecommunications",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "579 - 593",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00018-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929500018D",
author = "Dirk Rabaey and Josiane Vandenbroeck",
abstract = "Microelectronics has dramatically changed the architecture and design concepts of telecommunications products. Its strength is based on the successful combination of three different disciplines: technology, design automation and device architecture. The evolution in these areas will be described and illustrated with several examples of telecommunications applications in the three main business segments of the telecommunications market: switching, transmission and end-user systems. Telecommunications reliability requirements and their impact on the requirements for the technologies are discussed. Finally, the evolution of telecommunications products is described, followed by a brief discussion of future technology trends."
}
@article{Tadahiro1995595,
title = "Ultra-clean processing for ULSI",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "595 - 619",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00020-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929500020I",
author = "Tadahiro and Ohmi",
abstract = "The simultaneous fulfilment of three principles, viz. ultra-clean water surface, ultra-clean processing environment, and perfect process-parameter control, is the key to high-performance fabrication of advanced subhalf-micron and subquarter-micron ULSI devices. The importance of this ultra-clean processing concept is demonstrated by the experimental results of low-temperature silicon epitaxy by low-kinetic-energy Ar ion bombardment. By optimizing process parameters under ultra-clean conditions, high-crystallinity silicon epitaxial layers are successfully grown at temperatures as low as 250°C, with accompanying simultaneous doping. Advanced copper metallization for large-current driving interconnect is also achieved. Giant-grain copper thin films, also formed by low-kinetic-energy Ar ion bombardment, exhibit very low resistivity and excellent reliability against electromigration and stress migration. Native and chemical-oxide-free processing produces ideal metal-to-silicon contacts with very low resistance, i.e. 10−9 Ω·cm2. Ultra-clean—hydrogen-radical-balanced and surface-microroughness-free—oxidation is confirmed to form high quality, very thin oxide films of 5 to 10 nm, with complete uniformity and very strong resistance to hot electron injection. Low-temperature annealing ion implantation makes practical a metal gate self-aligned MOS LSI, which is crucial for high current driving capability in high-speed CMOS. All of these advanced fabrication technologies, realized for the first time by ultra-clean techniques, allow total low-temperature processing, such as gate oxidation at 450°C, implanted region annealling at 450°C and single-crystal silicon epitaxy at 300°C, which is essential for high-performance subhalf-micron and subquarter-micron ULSI. Oxide layer-free metal-to-silicon and metal-to-metal film deposition is freely available in ultra-clean processes, so that field-programmable anti-fuse technology is achievable by current drive silicidation as well as by very low resistance metal/silicon and metal/metal contact."
}
@article{Bhanumurthy1995621,
title = "A practical EPROM-based extended memory code conversion system",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "621 - 626",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00021-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295000219",
author = "G. Bhanumurthy and T.V. Chandrasekhar Sarma and C. Aneel Kumar and S.Malik Basha",
abstract = "The design, fabrication and testing of a practical code conversion system is presented. This system is an example of an Algorithmic State Machine or a Finite State Machine: the standard design procedure for such machines is briefly reviewed. Our system facilitates 14 specific types of chosen code conversions, grouped as direct, derived and additional. The system is based on the 16 k bit EPROM 2716 chip: to cover the entire operation envisaged, the system memory is expanded to nearly 28 k bits by including flip-flop, multiplexing and additional ROM units. LEDs are used to indicate the system input and output status. The results of testing of the unit are reported. The design principles and practical implementation of the system described may be applied to similar systems or machines in a wider context."
}
@article{Pavan1995627,
title = "Simulating radiation reliability with BERT",
journal = "Microelectronics Journal",
volume = "26",
number = "6",
pages = "627 - 633",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)00022-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929500022A",
author = "Paolo Pavan and Robert Tu and Eric Minami and Gary Lum and Ping K. Ko and Chenming Hu",
abstract = "This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phonomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data."
}
@article{tagkey1995i,
title = "Siemens' new HITFET switches for all applications",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "i - ii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90032-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900322",
key = "tagkey1995i",
abstract = "Following Siemens' recent launch of the MiniSmart range of electronic power switches, it has now added the HITFET range — a new generation of Smart SIPMOS transistors. Unlike the MiniSmart chips, these are lowside switches for loads connected to battery voltage (and not ground). The HITFET is protected against short circuits, overloads, excess voltages, excess temperatures and electrostatic discharge over its entire operating range without any external powersupply. It can be controlled like a standard MOSFET and can also be used in analog applications."
}
@article{tagkey1995iii,
title = "Texas instruments 80 MHz 486DX2 “closes gap between price and performance” in consumer MM PCs",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "iii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90033-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900330",
key = "tagkey1995iii"
}
@article{tagkey1995iv,
title = "National semiconductor's new car theft deterrent",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "iv - v",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90034-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900349",
key = "tagkey1995iv"
}
@article{tagkey1995v,
title = "3.3 V logic family with 5 V performance",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "v - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90035-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900357",
key = "tagkey1995v"
}
@article{tagkey1995vi,
title = "Sharp accessible with 32 Mb in industry-fastest 100 ns mask ROMs",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "vi - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90036-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900365",
key = "tagkey1995vi"
}
@article{tagkey1995vii,
title = "NEC “industry's first” 0.35 μm drawn gate array technology",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "vii - viii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90037-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900373",
key = "tagkey1995vii"
}
@article{tagkey1995ix,
title = "Ambar Cascom launches industry's fastest monolithic, 8-bit, flash ADC",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "ix - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90038-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900381",
key = "tagkey1995ix"
}
@article{tagkey1995ix,
title = "Orion™ microprocessor powers award winning arcade game",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "ix - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90039-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929590039X",
key = "tagkey1995ix"
}
@article{tagkey1995x,
title = "Thesys & Phoenix co-operate on ATM chips",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "x - xi",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90040-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900403",
key = "tagkey1995x"
}
@article{tagkey1995xi,
title = "SPARC ships 110 MHz MicroSPARC-II™ processor",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xi - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90041-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900411",
key = "tagkey1995xi"
}
@article{tagkey1995xii,
title = "TI 16-bit, fixed-point DSPs",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90042-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929590042X",
key = "tagkey1995xii"
}
@article{tagkey1995xiii,
title = "AT&T extends lead in fixed-point DSP",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xiii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90043-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900438",
key = "tagkey1995xiii"
}
@article{tagkey1995xiii,
title = "HP to use AMD 486 microprocessors",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xiii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90044-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900446",
key = "tagkey1995xiii"
}
@article{tagkey1995xiv,
title = "Zero-power MCU support chips extend battery life by over 3 hours",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xiv - xv",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90045-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900454",
key = "tagkey1995xiv"
}
@article{SL1995xvii,
title = "Logic design for array-based circuits: A structured design methodology: D.E. White, Academic Press, CA, 1992, 339 pp., ISBN: 0-1274-6660-6, US$45.00, £24.00",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xvii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90046-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900462",
author = "S.L. and Hurst"
}
@article{MR1995xvii,
title = "Microsensors: Principles and applications: Julian W. Gardner, John Wiley, UK, 1994, 330 pp., ISBN. 0-471-941-352, £49.95 (hardback); ISBN. 0-471-941-360, £19.95 (paperback)",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xvii - xviii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90047-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900470",
author = "M.R. and Haskard"
}
@article{M1995xviii,
title = "Properties and growth of diamond: Gordon Davies (ed.), INSPEC, Institution of Electrical Engineers, London, UK, 1994, ISBN. 0-85296-875-2, £135.00",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xviii - xix",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90048-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900489",
author = "M. and Henini"
}
@article{Julian1995xix,
title = "Modeling with an analog hardware description language: H.A. Mantooth and M. Fiegenbaum, Kluwer Academic Publications, Norwell, MA, 1995, 273 pp., ISBN: 0-7923-9516-6, US$95.00, £67.50, Dfl.185. 00",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xix - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90049-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900497",
author = "Julian and Raczkowycz"
}
@article{MS1995xix,
title = "Quality conformance and qualification of microelectronic packages and interconnections: M. Pecht, A. Dasgupta, J. W. Evans and J. Y. Evans (editors),John Wiley, NY, 1994, 460 pp., £54.00",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xix - xx",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90050-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900500",
author = "M.S. and Harris"
}
@article{SL1995xx,
title = "System test and diagnosis: W.R. Simpson and J.W. Sheppard, Kluwer Academic Publishers, Norwell, MA, 1994, 382 pp., Dfl. 190.00, US$93.00, £67.95",
journal = "Microelectronics Journal",
volume = "26",
number = "5",
pages = "xx - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90051-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900519",
author = "S.L. and Hurst"
}
@article{Roy1995i,
title = "Pictures worth a thousand words?",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "i - iii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98941-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929598941J",
author = "Roy and Szweda",
abstract = "Readers will have noticed the presence of colour figures in Microelectronics journal recent issues. This is but the tip of an iceberg as your journal evolves in the computer-aided age. I thought that it would make an interesting editorial to pontificate on the impact that some of the various computer aided publishing processes are already having on this and other journals. As with all new things, there are advantages and disadvantages. Moreover, whenever these developments are implemented on the grounds of saving time and money, circumstances nearly always contrive to confound this expectation."
}
@article{tagkey1995v,
title = "National semiconductor “Hard disk on a chip”",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "v - viii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90065-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900659",
key = "tagkey1995v"
}
@article{tagkey1995ix,
title = "Motorola integrated wireless data solution",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "ix - x",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90066-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900667",
key = "tagkey1995ix"
}
@article{tagkey1995xi,
title = "Toshiba 9.5-in (24 cm) TFT LCD Claims to be Industry's smallest",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xi - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90067-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900675",
key = "tagkey1995xi"
}
@article{tagkey1995xiii,
title = "OptoplanarTM - QTC's revolutionary packaging technology",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xiii - xvi",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90068-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900683",
key = "tagkey1995xiii"
}
@article{tagkey1995xvii,
title = "Return to growth in the West European electronics markets",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xvii - xviii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90069-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900691",
key = "tagkey1995xvii"
}
@article{tagkey1995xix,
title = "Tyrrell exploits military technology for racing gain",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xix - xx",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90070-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900705",
key = "tagkey1995xix"
}
@article{G1995xxi,
title = "Handbook of VLSI chip design and expert systems: A.F. Schwarz, Academia: Press, London, 1993, 582 pp., ISBN. 0-1263-2425- 5, £70.00",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xxi - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90071-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900713",
author = "G. and Russell"
}
@article{MS1995xxii,
title = "Integrated optics: Design and modeling: R. März, Artech House, Norwood, MA, 1995, 336 pp., ISBN. 089-006-668-X, £63.00",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xxii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90072-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900721",
author = "M.S. and Harris"
}
@article{MS1995xxii,
title = "Electrooptics: Phenomena, materials and applications: F. Agulló-López, J.M. Cabrera and E Agulló-Rueda, Academic Press, London, 1994, 345 pp., ISBN: 0-1204-4512-3, £65. 00",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xxii - xxiii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90073-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929590073X",
author = "M.S. and Harris"
}
@article{DraeišaP1995xxiii,
title = "Iddq Testing for CMOS VLSI: Rochit Rajsuman, Artech House, London, 1994, 193 pp.; ISBN. 0-89-006-726-0, £54.00",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xxiii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90074-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900748",
author = "Draeiša P. and Milovanović"
}
@article{S1995xxiv,
title = "Modelling of interface carrier transport for device simulation: Dietmar Schroeder, Springer Verlag, Vienna and New York, 1994, 221 pp., öS 1298, DM 186",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "xxiv - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90075-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900756",
author = "S. and Mijalkovic"
}
@article{Gilligan1995327,
title = "A methodology for estimating interconnect capacitance for signal propagation delay in VLSls",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "327 - 336",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98934-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929598934J",
author = "Margaret Gilligan and Shobha Gupta",
abstract = "Using an algorithm based on a physical model, a strategy has been presented to optimise the parameters of the interconnect and the dielectric in a microelectronic circuit as dimensions are scaled into the submicrometre regime. The optimisation is based on. obtaining the minimum signal propagation delay. The signal propagation delay has been obtained using numerical and analytical relationships. A discussion on the application and validity of the analytical relationships proposed by previous authors has been presented."
}
@article{Hallwood1995337,
title = "System specification through VHDL — a structured approach",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "337 - 350",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98935-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929598935K",
author = "Marcia Hallwood and Neville Hobson and Ian Black",
abstract = "The increasing complexity of electronic design can present project teams with problems, many of which can occur in the interpretation and implementation of the initial product specification. As the design description becomes more detailed, the assessment of compliance to specification becomes more difficult. Thus an approach is required which spans the entire design process from initial specification to detailed circuit implementation, yet supports the natural design techniques for the different design stages. By combining VHDL (which can be used for both abstract behavioural descriptions and detailed gate level design) with standard graphical notation, a suitable design environment can be realized. Furthermore, the use of a graphical representation is more natural to a broader base of engineers and can assist in the adoption of VHDL as a design tool."
}
@article{Dlay1995351,
title = "Hardware area estimator based on the SQP algorithm",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "351 - 359",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98936-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929598936L",
author = "S.S. Dlay and P.d. Neighbour",
abstract = "This paper shows the SQP algorithm enhanced in a number of ways to achieve optimum results. The initial placement used by our algorithm (ESQP) is based on ‘attraction and repulsion’ (AR), force-directed graphs, and provides a more realistic platform from which to work. The ESQP algorithm can be used to generate candidate floor plans, which then allows the overall area to be estimated. In addition, by the judicious use of constraints, a designer is able to experiment, evaluate and compare alternative appoaches to the design. A number of bench tests have been performed and comparisons made with the SQP algorithm. The results illustrate the efficiency of the new algorithm in terms of area."
}
@article{HilmarF1995361,
title = "The behaviour of flip-flops under different boundary conditions",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "361 - 374",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98937-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929598937M",
author = "Hilmar F. and Dudziak",
abstract = "The maximal possible clock frequency of digital circuits is determined by the delay of the longest possible data path in the combinational circuit and the set-up-time of its flip-flop. In general, effects caused by variations of the supply voltage or the operation at different frequencies are unknown. Slight violations of the set-up or hold time may result in aggravating errors in the behaviour of the circuit. In this paper it will be shown that the behaviour of the flip-flops drastically depends upon the supply voltage, and the flip-flop parameters are determined by the clock frequency and the waveform of the input signal."
}
@article{SS1995375,
title = "High-temperature characteristics of epitaxial high-low junction n+−n−p+ silicon diodes",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "375 - 382",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98938-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929598938N",
author = "S.S. and Ang",
abstract = "The electrical characteristics of epitaxial high-low junction n+−n−p+ silicon diodes were investigated in the temperature range 27–310°C. The forward current conduction mechanism was predominantly diffusion, as indicated by the near-unity diode quality factors. Conductivity modulation in the lightly doped n epitaxial region improves the forward current conduction at high current levels. The reverse current increases exponentially with increasing temperature. The weak voltage dependence of the reverse current indicates that the predominant conduction mechanism is diffusion, as predicted by the ideal Shockley equation. The improvement in reverse current characteristics of the n+−n−p+ diode over that of the n+−p+ diffused diode is due to (a) the high quality of the epitaxial n-p+ junction as a result of the pre-epitaxy surface treatment, and (b) the n-side of the np junction of the n+−P+ diode being more heavily doped than the lightly doped n epitaxial layer of the n+−n−p+ diode."
}
@article{Fenn1995383,
title = "The design of Reed-Solomon codecs over the, dual basis",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "383 - 391",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98939-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929598939O",
author = "S.T.J. Fenn and D. Taylor and M. Benaissa",
abstract = "In this paper we consider the implementation of Reed-Solomon (RS) codecs. It: is suggested that the most appropriate basis for RS codecs to operate over is the dual basis. The bit-serial Berlekamp multiplier has long been known to be suitable for implementation in RS encoders, but here we also consider its use in RS decoders. The Berlekamp multiplier was previously thought suitable only for use in constant multipliers because it operates over both the dual basis and the polynomial basis. However, work on establishing optimal dual bases to the polynomial basis allows for the design of fist and hardware-efficient 2-variable input dual basis multipliers which can be utilized in RS decoders. Accordingly, we quantify the advantages of utilizing these dual basis multipliers throughout RS codecs. These multipliers have also been utilized in the design of two codecs, a (15, 11) RS codec and a (31, 9) RS codec."
}
@article{Chandler1995393,
title = "Ultra-fine feature printed circuits and multi-chip modules",
journal = "Microelectronics Journal",
volume = "26",
number = "4",
pages = "393 - 404",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98940-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929598940S",
author = "N. Chandler and S.G. Tyler",
abstract = "As semiconductor devices evolve, so do the packages that house them and the printed circuit boards (PCBs) that support and interconnect them to form systems. The higher numbers of connections per device are squeezed into smaller pitches, both on the package and in the PCB, to fit into the available space and to improve electrical performance. Ultimately, individual packages are not required for each device. This paper describes substrates available from GEC-Marconi suitable for carrying and interconnecting packaged or unpackaged devices, or a combination of them, manufactured using techniques and materials familiar to the PCB industry. Multi-chip modules using lamination techniques to make the substrates (MCM-Ls) are a natural extension of printed circuit technology to meet the ever increasing demands of system integration and density. As with other forms of multi-chip module (MCM), the interconnection density is so high that most circuits need very few signal layers — often only two. The substrate can also incorporate layers to control thermal expansion and extract heat. MCM-L substrates are extraordinarily versatile; they can accommodate packaged ICs (for example, fine-pitch surface mount technology), unpackaged ICs, other MCMs, and odd-form components. These ultra-fine feature substrates can provide solutions for a wide range of sizes, complexities, performance and market sectors at competitive prices."
}
@article{tagkey1995i,
title = "News update",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "i - vii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90013-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900136",
key = "tagkey1995i"
}
@article{tagkey1995viii,
title = "NTT develops prototype nanostructure silicon single-electron transistor operating near room temperature",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "viii - x",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90014-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900144",
key = "tagkey1995viii",
abstract = "NTT (Nippon Telegraph and Telephone Corporation) has fabricated a prototype single electron transistor (SET) which allows electric current to be controlled electron-by-electron, and has confirmed that the device operates even at temperatures near room temperature. As its name suggests, the SET operates on a single electron. It is expected to realize outstanding savings in power consumption as well as facilitate very large scale integration."
}
@article{CharlesW1995xi,
title = "The 1994 international conference on electronic materials (ICEM 94)",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xi - xiii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90015-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900152",
author = "Charles W. and Tu",
abstract = "The 1994 International Conference on Electronic Materials (ICEM '94), organized by the Materials Research Society-Taiwan (MRS-T), was held on the campus of the National Chiao Tung University, Hsinchu, Taiwan, from December 19 to 21, 1994. It is one of three international conferences held in this “Science City” of the Science-based Industrial Park and two top-ranked universities (Chiao Tung and Tsing Hua University) all within two weeks, reflecting the increasing importance of Taiwan's R & D and high-tech industry. The local arrangement committee pulled out all stops to make this conference a success."
}
@article{JoAnn1995xv,
title = "Advanced materials welcomed at IEDM",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xv - xviii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90016-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900160",
author = "Jo Ann and McDonald",
abstract = "If one wants to stay on top of new trends, yet retain a proper perspective regarding how the new compounds and other advanced materials fit into the mainstream silicon world, IEDM is the event to attend. The IEEE International Electron Devices Meeting, which alternates annually between Washington DC and San Francisco, was held this year in downtown San Francisco at the height of the Christmas season. Celebrating it's 40th Anniversary, IEDM displayed a lot of flash this year, and extended its traditional warm welcome towards the advanced materials. MEJ continued its coverage of this major international meeting with a report from our on-the-spot reporter."
}
@article{M1995xix,
title = "First international workshop on growth, characterization and exploitation of epitaxial III–V compound semiconductors on novel index surfaces, Trento (Italy), 4–7 December 1994",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xix - xxiii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90017-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900179",
author = "M. and Henini",
abstract = "As someone actively interested in the growth on non-conventional semiconductor surfaces, I have long wanted to organize a workshop on this and related themes. The workshop was initiated by Dr I Pavesi (University of Trento), Professor G Guillot (INSA-Lyon, France) and myself."
}
@article{PA1995xxv,
title = "The stationary semiconductor device equations: 1986. 40 figures. ix, 193 pages. Cloth öS 760, -, DM 109,-. ISBN 3-211-81892-8",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxv - xxvi",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90018-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900187",
author = "P.A. and Markowich"
}
@article{N1995xxvi,
title = "MOSFET models for VLSI circuit simulation: 1993. 260 figures. xii, 605 pages. Cloth öS 2086,-, DM 298,-. ISBN 3-211-82395-6",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxvi - xxvii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90019-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900195",
author = "N. and Arora"
}
@article{Joppich1995xxvii,
title = "Multigrid methods for process simulation: 1993. 126 figures. v, 309 pages. Cloth öS 1386,-, DM 198,-. ISBN 3-211-82404-9",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxvii - xxviii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90020-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900209",
author = "W. Joppich and S. Mijalković"
}
@article{M1995xxviii,
title = "InP HBTs: Growth, processing and applications: B. Jalali and S.J. Pearton (editors), Artech House Publishers, 1994, 336 pp., ISBN: 0-89006-724-4, £76.00",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxviii - xxix",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90022-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900225",
author = "M. and Henini"
}
@article{M1995xxviii,
title = "High speed semiconductor devices: Circuit aspects and fundamental behaviour: H. Beneking, Chapman & Hall, London, UK, 1994, ISBN: 0-412-56220-0, £22.50",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxviii - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90021-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900217",
author = "M. and Henini"
}
@article{M1995xxix,
title = "Properties of Group III nitrides: James H. Edgar (editor), INSPEC, Institution of Electrical Engineers, London, 1994, ISBN: 0-85296-818-3, £95.00",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxix - xxx",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90023-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900233",
author = "M. and Henini"
}
@article{SL1995xxx,
title = "Introduction to neural networks: P.D. Picton, Macmillan Press, UK, 1994, 168 pp., ISBN: 0-333-618-327, £13.99 (paperback)",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxx - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90024-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900241",
author = "S.L. and Hurst"
}
@article{MS1995xxx,
title = "High-speed VLSI interconnections: Modeling analysis and simulation: A.K. Goel, John Wiley, NY, 1994, 620 pp., ISBN: 0-471-571-229, £62.00",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "xxx - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90025-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929590025X",
author = "M.S. and Harris"
}
@article{NinoslavD199577,
title = "Guest editorial",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "77 - 78",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90012-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900128",
author = "Ninoslav D. and Stojadinović",
abstract = "It is well known that over the last 15 years process and device simulation has established itself as an indispensable accelerating tool for the rapid development of microelectronics. Its practical aim is to provide microelectronics engineers with the computer simulation tools which form quantitative links between the basic technological parameters and electrical behaviour of microelectronics devices. That allows one to test, evaluate and optimize various aspects of the microelectronics industry development cycles without resorting to expensive and time-consuming fabrication prototypes. However, despite the consistently remarkable achievements in this area, evolution towards ever smaller devices, advanced processes and new materials continuously necessitates the development of new physical models, numerical techniques and simulation programs."
}
@article{Lloyd199579,
title = "Technology CAD at AT&T",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "79 - 97",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98915-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929598915E",
author = "Peter Lloyd and Colin C. McAndrew and Michael J. McLennan and Sani R. Nassif and Kishore Singhal and Kumud Singhal and Peter M. Zeitzoff and Mohamed N. Darwish and Ken Haruta and Janet L. Lentz and Hong-Ha Vuong and Mark R. Pinto and Conor S. Rafferty and Isik C. Kizilyalli",
abstract = "Technology computer-aided design (TCAD) is essential to the design of modern integrated circuit fabrication processes. TCAD tools must not only model real processes accurately, to allow predictive simulation during technology research and development, but they must work together as an integrated system to allow efficient exploration of technology options. Sensitivity and statistical analyses using an integrated TCAD system provide rapid technology characterization, including the examination of process extremes, before fabrication. This predictive capability reduces the technology design interval, and enables the design of optimized, manufacturable designs. This paper describes the integrated TCAD system in use at AT&T."
}
@article{Dutton199599,
title = "Technology CAD at Stanford University: physics, algorithms, software and applications",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "99 - 111",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98916-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929598916F",
author = "Robert W. Dutton and Ronald J.G. Goossens",
abstract = "Recent developments in TCAD at Stanford are reviewed, starting with considerations of the broad set of applications ranging from technology design through manufacturing science. Several examples are given, based on industrial collaborations and consortia efforts. The issues of accurate physical models and calibration are addressed, including issues such as equipment models. Algorithmic issues of TCAD, including the use of parallel computers, are presented along with results for device simulation."
}
@article{Lorenz1995113,
title = "The STORM technology CAD system",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "113 - 135",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98917-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929598917G",
author = "J. Lorenz and C. Hill and H. Jaouen and C. Lombardi and C. Lyden and K. de Meyer and J. Pelka and A. Poncet and M. Rudan and S. Solmi",
abstract = "This paper gives an outline of the STORM TCAD system. STORM is a program system for the two-dimensional simulation of semiconductor fabrication process sequences and the optimization of the electrical behaviour of the devices fabricated. It has been developed within an ESPRIT project by a consortium of European companies and research institutes. In this presentation, the software structure of STORM is described, followed by a discussion of the physical models developed. Finally, some application examples are given. A more detailed description of the industrial evaluation of STORM is given in a dedicated paper elsewhere [1]."
}
@article{Halama1995137,
title = "The Viennese integrated system for technology CAD applications",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "137 - 158",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98918-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929598918H",
author = "S. Halama and F. Fasching and C. Fischer and H. Kosina and E. Leitner and P. Lindorfer and Ch. Pichler and H. Pimingstorfer and H. Puchner and G. Rieger and G. Schrom and T. Simlinger and M. Stiftinger and H. Stippel and E. Strasser and W. Tuppa and K. Wimmer and S. Selberherr",
abstract = "Modern technology CAD systems consist of several simulation tools and a so-called technology CAD framework for tool integration and tool development. We discuss the general requirements for such a TCAD framework. From a review of existing TCAD systems with an emphasis on software aspects, we deduce general architectural guidelines. Bearing these in mind, we motivate our ideas, concepts and choices for the data level, the user interface and the task level of VISTA, the Viennese Integrated System for Technology-CAD Applications. The resulting structures and implementations of these three major parts of VISTA are then described, and a brief overview of integrated tools and future activities is given."
}
@article{Ueda1995159,
title = "Technology CAD at OKI",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "159 - 175",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98919-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929598919I",
author = "J. Ueda and S. Kuroda and K. Fukuda and K. Kai and K. Nishi",
abstract = "This paper outlines Technology CAD (TCAD) at OKI. The TCAD system at OKI, or UNISAS, is a unified process/device/circuit simulation system, offering a user-friendly simulation environment for OKI's process, device and circuit engineers. Multi-dimensional process and device simulators, OPUS and ODESA, constitute the core of UNISAS and can be used with versatile device structures for various purposes. Physics-based simulators constitute another part of UNISAS, and are used mainly for modelling purposes. UNISAS is used quite extensively by engineers for actual process and device development, and has become an indispensable tool for low-cost, fast TAT VLSI development."
}
@article{Hopper1995177,
title = "The MASTER Framework",
journal = "Microelectronics Journal",
volume = "26",
number = "2–3",
pages = "177 - 190",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98920-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929598920M",
author = "Peter J. Hopper and Peter A. Blakely",
abstract = "The MASTER Framework has a two-level architecture. The first level consists of a standard structure format and a set of ‘MASTER Tools’. This provides a high quality, utility-based framework that supports highly interactive use. The second level is a ‘Virtual Wafer Fab’ that adds capabilities for large-scale simulation-based design and experimentation. Powerful semiconductor technology CAD systems are constructed by populating the MASTER Framework with conforming process and device simulators."
}
@article{Roy1995i,
title = "Publishing in MEJ",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "i - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98906-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269295989068",
author = "Roy and Szweda"
}
@article{Keith1995ii,
title = "ISO 9000 — Say what you do and do what you say",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "ii - v",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90004-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900047",
author = "Keith and Gurnett",
abstract = "The ISO 9000 standard now sweeping the world was born from the UK standard BS 5750 model. This BS standard was first laid down in 1979 under the guidance of the U.K's DTI and MoD organisations. In 1987 the International Organisation for Standards (ISO) in Geneva represented by 91 nation members unveiled the ISO 9000 series of standards and Europeans brought them into the EEC.
The basic principle built into the standards evolved from the older U.S. MIL and British standards. Its secret and the primary reason for its success is ‘simplicity’. It has been described as ‘a way of life’ and ‘common sense set down on paper’.
Microelectronics is becoming increasingly involved in technologies related to customised end product as seen in the recent MCM technology. It is the customised product that responds readily to this standard. The ‘off the shelf’ standard product, such as memories and glue logic, only benefit in marketing. The manufacturer of millions invariably demand professional corporate policies and good housekeeping in order to avoid millions of rejects."
}
@article{tagkey1995vi,
title = "Harris shows its mixed technology at ‘Electronica 94’",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "vi - vii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90005-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900055",
key = "tagkey1995vi",
abstract = "Mixed technology, combining low power CMOS with high voltage and high frequency devices on the same substrate along with the use of double poly techniques to enable increased isolation with high voltage operation, are increasingly necessary to meet the demands of the latest complex integrated systems. These two circuits from Harris Semicondutors, launched at Europe's Electronic fair - Electronica 94 - at Munich in November 94, demonstrate applications where all of these parameters are clearly shown in the specified operating conditions that apply to them."
}
@article{tagkey1995viii,
title = "“Digital television”: will the chips be available?",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "viii - ix",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90006-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900063",
key = "tagkey1995viii",
abstract = "Siemens engineer R.Luder looks at the trends in feature size and complex geometry arrangements in todays ICs. The intention is to highlight what is needed, in Siemens view, for the future Digital TV era."
}
@article{tagkey1995x,
title = "News update",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "x - xvii",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90007-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900071",
key = "tagkey1995x"
}
@article{SimonS19951,
title = "A high-low emitter bipolar power transistor",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "1 - 7",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98907-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295989079",
author = "Simon S. and Ang",
abstract = "Bipolar power transistors with a high-low emitter profile were fabricated and their electrical characteristics were investigated. The maximum do current gain of these high-low emitter transistors is in the range of 600 to 700 at a collector current of 600 :mA to 700 mA. This is attributed to the minority carrier reflection of the high-low emitter junction and enhanced material properties of the epitaxial base and lightly-doped emitter. The low base current activation energy (0.9 eV) is attributed to n+ emitter band-gap shrinkage and minority carrier reflection of the high-low emitter junction. These transistors also have a smaller percentage increase in maximum do current gain with increasing temperature than do conventional bipolar power transistors."
}
@article{Hoskins19959,
title = "Artificial neural network techniques for the estimation of thick-film resistance",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "9 - 16",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98908-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929598908A",
author = "B.G. Hoskins and M.R. Haskard",
abstract = "Artificial neural network techniques are investigated as an alternative to parametric modelling for the estimation of fired thick-film resistor values. Multi-layer neural network models are constructed from resistor substrate test data. The connectionist models are developed through training procedures, allowing subsequent fired-value prediction. These non-parametric approaches do not require the functional form of the model to be known. The techniques are suitable for use in computer aided design environments."
}
@article{Gatti199517,
title = "Fully CMOS integrated micropower battery monitor",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "17 - 21",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98909-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929598909B",
author = "U. Gatti and G. Torelli",
abstract = "A CMOS micropower battery monitor circuit which operates at supply voltages down to 2 V is presented. It is a part of a more complex system, where it detects a lower than 2.2 V supply voltage and produces a shut-down signal. The circuit consists of a voltage divider, a comparator and a band-gap voltage reference. A power-down function is also included. The circuit presented has been integrated in a conventional 2-μm n-well CMOS process and evaluated experimentally. It occupies a silicon area of 0.25 mm 2 and has a total power consumption below 30 μW at VDD = 3 D."
}
@article{Ismaeel199523,
title = "Modelling and testing for stuck faults in asymptotically zero power split-level charge recovery logic circuits",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "23 - 34",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98910-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929598910J",
author = "Asad A. Ismaeel and Rakesh Bhatnagar",
abstract = "A new transistor model is presented, which employs the LogicTransistor Function (LTF) to examine the behaviour of split-level Charge Recovery Logic (CRL) circuits. The LTF is a Boolean representation of the circuit output in terms of its input variables and its transistor topology. The LTF is automatically generated using the path algebra technique. The faulty behaviour of the circuit can be identified from the fault-free LTF by using a systematic procedure. The model assumes; the logic values 0, 1, I and M, where I and M imply an intermediate logical value and a memory element respectively. Both classical stuck-at faults and non-classical transistor stuck faults are analyzed in the model. An algorithm based on a modified version of the Boolean difference technique is applied to obtain test vectors. Primitive D-cubes of the fault are extracted for a specific subcircuit. To generate tests for single or multiple faults, a variant of the D-algorithm may be used."
}
@article{DavidG199535,
title = "High-speed switched-current circuits using trans-impedance amplifiers",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "35 - 41",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98911-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929598911A",
author = "David G. and Nairn",
abstract = "The sampling rate of switched-current circuits can be significantly increased by using a trans-impedance amplifier, instead of the more common voltage amplifier. The increased speed is accomplished without increasing either the chip area or the power dissipation. An experimental sample-and-hold circuit:, implemented using a 1.2μm CMOS process, achieved a sampling rate of 10 MS/s while requiring less than 5 mVJ of power and 0.15 mm 2 of chip area. The technique can be used in other switched-current circuits to improve their speed without increasing chip area or power dissipation."
}
@article{Sánchez199543,
title = "A method for optimizing programmable logic arrays using the simulated annealing algorithm",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "43 - 54",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98912-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929598912B",
author = "J.M. Sánchez and J. Ballesteros",
abstract = "In this paper we present the programmable logic array (PLA) topological optimization problem using folding techniques. First of all, we consider a multiple unconstrained column folding and solve this problem using the Simulated Annealing (SA) algorithm. Afterwards we extend this algorithm in order to solve several types of constrained folding problem. In this way, simple folding is considered as a special case of multiple constrained folding. Bipartite graphs are used to solve the multiple constrained folding problem. Finally, we give some experimental results found by executing the algorithm."
}
@article{LeonidF199555,
title = "Rare-earths: Application in bulk lll-V semiconductor crystal growth technology",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "55 - 67",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98913-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929598913C",
author = "Leonid F. and Zakharenkov",
abstract = "The present article surveys the results of the investigation how rare-earth (RE) elements influence the InP and GaAs crystals' properties in the wide range of concentrations, as well as the technological aspects of RE application in the single crystal growth practice."
}
@article{tagkey199568,
title = "Tenth Feofilov Symposium on spectroscopy of crystals doped with the rare-earth and transition-metal ions",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "68 - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90008-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929590008X",
key = "tagkey199568"
}
@article{Kozlovski199569,
title = "The processes of defect formation and conductivity compensation of n-GaAs:Yb due to electron irradiation",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "69 - 76",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)98914-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929598914D",
author = "Vitali V. Kozlovski and Leonid F. Zakharenkov",
abstract = "In n-GaAs with low primary radiation defects (RD) mobility, rather an infrequent situation is accomplished when the after-effects of irradiation at Q=300 K are determined by the native lattice defects. For this, the secondary processes contribution to the defects formation is practically negligible and the radiation results do not vary considerably in their diversity and information [1–4]. Basically, the secondary processes effect may be intensified by some changes in the irradiation specifications, e.g. irradiation temperature, and in the increase of doping level of the initial material [5–8]."
}
@article{tagkey1995II,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "26",
number = "1",
pages = "II - ",
year = "1995",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(95)90003-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269295900039",
key = "tagkey1995II"
}
@article{Keith1994iii,
title = "Who will drive technological advance?",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "iii - iv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90120-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901201",
author = "Keith and Gurnett",
abstract = "Electronic materials and packaging have been inexorably drawn along with the relentless march of technology. The complexity and capability of electronics increases with technology, yet it reduces the size and simplifies the shape of the materials and components that go to make up electronics. Whilst basic research into materials and packaging can be targeted into the areas of concern the main thrust for improvements is, of necessity, controlled by the specific needs of the product and the market."
}
@article{tagkey1994v,
title = "1994 IEEE international electron devices meeting 11th-14th December",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "v - viii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90121-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490121X",
key = "tagkey1994v",
abstract = "This meeting is the fortieth anniversary of the IEDM. Held at San Francisco December 11th to 14th, it is billed as the world's Number One technical meeting for breakthrough in semiconductors. In the early sixties it was predicted at one of the meetings that memory prices would fall to half a cent per bit. At the time this prediction was considered to be wildly optimistic. This would price today's 64Mbit DRAM at $320,000 with the with the 1-Gb device discussed at this conference coming in at $5.0M.
Technical highlights of the show and some outstanding papers amongst the 202 invited and contributed research papers are listed below. IEDM papers this year discuss many different approaches to achieve low-voltage low-power circuits, DRAMs the memory workhorse, the nonvolatile memories search for a hard disk replacement and Flat Panel Work."
}
@article{tagkey1994ix,
title = "News update",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "ix - xvi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90122-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901228",
key = "tagkey1994ix"
}
@article{JoAnn1994xvii,
title = "1994 America on display… American LCDs playing catch-up",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "xvii - xx",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90123-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901236",
author = "Jo Ann and McDonald",
abstract = "With each sensational new development, the real life race for American dominance over Japan in next-generation flat panel displays is looking progressively more like a rough draft of a techno-thriller (with the likelihood of getting even rougher). The real life drama that is unfolding is not only exciting, it often seems less believable than fiction. In this episode of “America On Display,” we'll try to sort through what some of the leading characters have been up to lately, who they're working with (or against), and what the U.S. government and various “cooperative” catalysts are contributing to the chain of chaotic events."
}
@article{tagkey1994xxi,
title = "SI diamond's flat panel display",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "xxi - xxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90124-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901244",
key = "tagkey1994xxi"
}
@article{Keith1994xxiii,
title = "Ulta-thin packaging versus the known good die",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "xxiii - xxvi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90125-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901252",
author = "Keith and Gurnett",
abstract = "Semiconductor packaging is sparking intense interest in ultra-thin packages in which the body thickness is less than 1mm. Most of this packaging development is taking place in the Far East and is being carefully monitored in the US. On the basis that most IC assembly and packaging is carried out in this region and market demand for the UTP is low, US companies are content with watching and waiting. Market interest in the US is high in the field of MCMs and this has created a large lobby for the KGD bandwagon. Are these two issues related? Does the Ultra-Thin Package (UTP) represent the best way of solving the IC interface with sub-systems or does it present more problems than the KGD philosophy? This feature looks at the available data on UTP and examines the various aspects of these vying approaches to increased packing densities."
}
@article{Mohamed1994607,
title = "Optoelectronic materials and devices",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "607 - 608",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90126-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901260",
author = "Mohamed and Henini",
abstract = "The development of epitaxial growth techniques, such as molecular beam epitaxy and metal-organic vapour phase epitaxy, allows us to control the growth of individual semiconductor layers on an atomic scale. These achievements provide a strong basis for fabricating new forms of active device with ‘tailor made’ characteristics. Novel electronic devices have been proposed and demonstrated in various fields. These include HBTs, HEMTs and RTDs. As well as these devices there has been enormous development in photonic and optoelectronic devices."
}
@article{Meier1994609,
title = "Role of molecular beam epitaxy in the field of optoelectronics",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "609 - 617",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90127-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901279",
author = "Heinz P. Meier and M. Kamp and S. Strite",
abstract = "This article reviews the role of molecular beam epitaxy (MBE) in the field of optoelectronics. In the past 25 years, this crystal growth technology has helped researchers to investigate important physical phenomena related to materials properties. In particular, success in engineering the band structure and refractive index was a key to the exploration and development of carrier transport devices such as high-mobility, bipolar and tunnel transistors, as well as optoelectronic elements such as LEDs, lasers, modulators and photodetectors. Because of its relatively simple growth process, excellent growth control and ability to characterize growth-related phenomena in situ, MBE initiated many important research fields such as GaAs on silicon, fast optical switches and detectors, and vertical cavity and edge-emitting quantum well lasers, particularly in the GaAs/AlGaAs materials system. In addition, relatively unexplored systems such as II/VI materials, nitrides or even Si/Ge heterostructures, are currently hot topics among MBE crystal growers.
Over the years, the division of the roles of MBE as a research and prototyping tool and metal-organic vapor-phase epitaxy (MOVPE) as a production tool has become well established. However, for certain production processes, specifically compact disc and 980 nm Er-fiber pump lasers, MBE has been proved to be as good or better than MOVPE, even when high throughput is a necessity. New fields, such as devices based on very precise vertical Fabry-Perot cavity designs and low-temperature GaAs, are emerging in which the uniform thickness control, in situ monitoring capability and low-temperature growth ability of MBE offer clear superiority over MOVPE for eventual production."
}
@article{Mataki1994619,
title = "Mass production of laser diodes by MBE",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "619 - 630",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90128-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901287",
author = "Hiroshi Mataki and Haruo Tanaka",
abstract = "Molecular beam epitaxy (MBE) plays an important role in the mass production of AlGaAs laser diodes which have been widely used in a variety of opto-electronic applications. This paper provides an overview of self-aligned structure AlGaAs laser diodes fabricated by MBE (‘SAM laser diodes’)focusing on the GaAs passivation technique that we put into practical use for the first time, and on the modification of conventional MBE systems. Several features of SAM laser diodes for practical applications are also reviewed."
}
@article{KevinA1994631,
title = "The development of II–VI semiconductors for blue diode lasers and optoelectronic devices",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "631 - 641",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90129-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901295",
author = "Kevin A. and Prior",
abstract = "Current injection lasers operating in the blue and blue-green spectral regions have recently been fabricated from II–VI epitaxial layers grown by MBE. In this paper, these materials developments which have led to the production of the first II–VI lasers are described, followed by a section on the recent introduction of the new quaternary alloy ZnMgSSe. This alloy has allowed the production of CW room temperature lasing and the lifetime of the lasers to be increased. Recent results relating to the development of modulators and SEED devices are also described."
}
@article{Okuyama1994643,
title = "Growth of ZnMgSSe and a blue-laser diode",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "643 - 649",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90130-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901309",
author = "Hiroyuki Okuyama and Akira Ishibashi",
abstract = "This paper describes the characteristics of ZnMgSSe, which is a material suitable for the cladding layer of a blue-laser diode. A blue-laser diode was operated at room temperature at a wavelength of 480 nm, and the lifetime of the continuous-wave operation of the II–VI LD was over 3 min. These values are the best so far reported for a II–VI LD."
}
@article{Shuji1994651,
title = "Growth of InxGa(1−x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "651 - 659",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90131-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901317",
author = "Shuji and Nakamura",
abstract = "InxGa(1−x)N films were grown on GaN films with an indium mole fraction x up to x = 0.33 at temperatures between 720°C and 850°C. The growth rate of InGaN films had to be decreased sharply to obtain high-quality InGan films when the growth temperature was decreased. Band-gap energies between 2.67 eV and 3.40 eV obtained by room-temperature photoluminescence measurements fit quite well to parabolic forms previously obtained by Osamura et al. on the indium mole fraction x assuming that the band-gap energies for GaN and InN are 3.40 and 1.95 eV, respectively. High-power InGaN/AlGaN double-heterostructure violet-light-emitting diodes were fabricated. The typical output power was 1000 μW and the external quantum efficiency was as high as 1.5% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 380 nm and 17 nm, respectively."
}
@article{Davis1994661,
title = "Deposition of III-N thin films by molecular beam epitaxy",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "661 - 674",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90132-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901325",
author = "Robert F. Davis and M.J. Paisley and Z. Sitar and D.J. Kester and K.S. Ailey and C. Wang",
abstract = "Fabrication of optoelectronic devices from III-N materials, operable in the blue and ultraviolet regions of the spectrum, has been a goal of many groups since the first infrared and red devices were commercially produced. Commercially viable blue-light-emitting diodes have now been achieved in these materials, and numerous investigators are now entering this field. Microelectronic devices are also of considerable interest.
While much of the original research on GaN and InN centered around films with the wurtzite structure, the zincblende structure nitrides have recently been receiving increasing interest because of their potential inherent advantages, e.g. increased carrier mobility. Recent results from several groups around the world have successfully addressed some of the traditional problems associated with growth of these materials.
Chemical vapor deposition (CVD) has been a traditional growth technique for nitride growth and continues to be very successful. However, many researchers, including those growing III–V nitrides, have turned to plasma-enhanced molecular beam epitaxy (MBE) for its important advantages in purity and in situ analytical capabilities. This paper reviews the recent developments in MBE growth of cubic boron nitride, aluminum nitride and the two poly-types of gallium nitride."
}
@article{Moerman1994675,
title = "III–V semiconductor waveguiding devices using adiabatic tapers",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "675 - 690",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90133-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901333",
author = "I. Moerman and G. Vermeire and M. D'Hondt and W. Vanderbauwhede and J. Blondelle and G. Coudenys and P. Van Daele and P. Demeester",
abstract = "In the past few years much effort has been put into the fabrication and optimization of III–V semiconductor waveguiding devices with integrated adiabatic mode size converters (tapers). By integrating a taper with a waveguide device, one wants to reduce the coupling losses and the packaging cost of OEICs in future optical communication systems. This paper gives an overview of different taper designs, their performance and the technological approaches used in realizing such tapered devices."
}
@article{Ramdane1994691,
title = "Monolithic integration of multiple quantum well DFB lasers and electroabsorption modulators",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "691 - 696",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90134-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901341",
author = "A. Ramdane and A. Ougazzaden and P. Krauz",
abstract = "Advanced fibre optics telecommunication systems rely on high performance components amongst which photonic integrated circuits (PICs) play a major role. In particular, there has been a growing need for low chirp optical sources, such as externally modulated distributed feedback (DFB) lasers. In this paper, the various monolithic integration schemes of multiple quantum well DFB lasers and electro-absorption modulators are reviewed and typical applications of these devices are briefly presented."
}
@article{Goldys1994697,
title = "Quantum confined light modulators",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "697 - 712",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90135-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490135X",
author = "E.M. Goldys and T.L. Tansley",
abstract = "A general framework for the operation of a large class of quantum confined light modulators is offered, supported by a discussion of the theoretical background. The design of a quantum confined modulator for a specific host system allows a wide choice of modulation mechanism, geometrical design configuration and field-controlled optical parameter. In this short review, we discuss specific combinations of optical property, semiconductor material system and geometry suitable for selected digital and analogue applications. Excitonic optical effects are emphasised as providing electric-field control of both optical absorption and refractive index in multiple quantum well structures. Geometrical aspects are also discussed, including phase modulation in a horizontal waveguide configuration and absorption modulation in transmission and reflection-mode vertical modulators. Self electrooptic effect devices (SEEDs) figure prominently across the range of optoelectronic system components and are used to illustrate various modulator functions in lightwave logic operations and neural networks."
}
@article{SC1994713,
title = "Comparison and competition between MCT and QW structure material for use in IR detectors",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "713 - 739",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90136-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901368",
author = "S.C. and Shen",
abstract = "This paper compares mercury cadmium telluride (MCT) with quantum well structures as infrared detection materials, especially for 8–14 μm. The fundamental properties and advantages related to their use in infrared techniques are described. Their limitations and disadvantages and the current state of the art are also discussed. Competition and comparison between the two systems are expected to last for a long time in view of the fundamental advantages and limitations of these materials. In addition, their potential as thermal detection material cannot be ignored."
}
@article{Kuhn1994741,
title = "Electroluminescence in p-i-n double-barrier resonant tunnelling structures",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "741 - 746",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90137-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901376",
author = "O. Kuhn and D.K. Maude and J.C. Portal and M. Henini and L. Eaves and G. Hill and M.A. Pate"
}
@article{HibbsBrenner1994747,
title = "Metalorganic vapour-phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "747 - 755",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90138-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901384",
author = "M.K. Hibbs-Brenner and R.P. Schneider Jr. and R.A. Morgan and R.A. Walterson and J.A. Lehman and E.L. Kalweit and J.A. Lott and K.L. Lear and K.D. Choquette and H. Juergensen"
}
@article{Tompa1994757,
title = "Large area, production MOCVD rotating disk reactor development and characteristics",
journal = "Microelectronics Journal",
volume = "25",
number = "8",
pages = "757 - 765",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90139-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901392",
author = "G.S. Tompa and W.G. Breiland and A. Gurary and P.A. Zawadzki and G.H. Evans and P. Esherick and B. Kroll and R.A. Stall"
}
@article{Roy1994iii,
title = "The gigabit generation",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "iii - v",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90024-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900248",
author = "Roy and Szweda"
}
@article{tagkey1994vi,
title = "Japanese companies maintain lead in semiconductor memory technologies",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "vi - xiv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90025-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900256",
key = "tagkey1994vi",
abstract = "Although other Far Eastern companies such as Samsung have become major players in commodity memory ICs, the US market continues to be a massive draw for all manufacturers and the Japanese memory component suppliers do not seem to be standing still. They continue to make the running in the next generations of commodity RAMs and other semiconductor memory devices. This Update highlights a number of key recent announcements from Japanese companies and tries to make some form of contextual comment in this oft-volatile market. We have taken a fairly broad sweep across the technologies and markets, from new device materials, process technologies through to packaging and applications. We begin with the headline news of NEC's new fab for Scotland."
}
@article{tagkey1994xv,
title = "US companies dominate SEMICON West 94",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "xv - xx",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90026-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900264",
key = "tagkey1994xv",
abstract = "Back in July, the semiconductor industry's “greatest show on earth” SEMICON West once again took place at the Moscone Center, SF, CA, USA. Riding the wave of a confident industry — thanks to fab expansions and the strong Yen — it was as usual, a jam-packed affair with over a thousand companies exhibiting and, according to the organizers, SEMI, overfifty thousand punters visiting over the 3 days. I should say that despite the title of this article there were quite a number of foreign companies there but rather like the World Series, it was predominantly an American show. That said, these companies had some interesting innovations to launch here and there so we try to give a flavour of the event with some of the highlights."
}
@article{Mathewson1994xxi,
title = "The 5th ESPRIT workshop on the characterization and growth of thin dielectrics in microelectronics",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "xxi - xxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90027-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900272",
author = "Alan Mathewson and Paula O'Sullivan",
abstract = "The 5th ESPRIT Workshop on the Characterization and Growth of Thin Dielectrics in Microelectronics was held in Blarney, Co. Cork, Ireland, on 24th and 25th November 1993. The workshop is organized by the Irish National Microelectronics Research Centre (NMRC) on behalf of the consortium involved in ESPRIT Project 2039, ‘Advanced PROM Building Blocks (APBB)’."
}
@article{Meehan1994463,
title = "Evaluation of hot-carrier degradation of n-channel MOSFETs at low gate bias",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "463 - 467",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90028-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900280",
author = "Alan Meehan and Paula O'Sullivan and Paul Hurley and Alan Mathewson",
abstract = "Hot-carrier effects pose a significant reliability issue as device dimensions are scaled down [1]. The ability to accurately predict hot-carrier lifetimes for devices is important for the development of fine-geometry MOS technology [2]. The hot-carrier degradation model developed by Hu et al. [1] at the University of Berkeley is widely used to predict device lifetimes under normal operating conditions from the results of accelerated tests. This model predicts device lifetimes at all bias conditions, while older models predict only worst case lifetimes at given drain voltages [3]. The Berkeley model is thus applicable to circuit-level reliability simulations. However, this paper shows that the model exaggerates the dependence of lifetime on gate bias, leading to very pessimistic minimum lifetime predictions. Since hot-carrier reliability is a crucial factor in modern MOS technologies, this error in the model may lead to mistaken conclusions on product viability."
}
@article{Concannon1994469,
title = "A model for hot-electron and hot-hole injection in flash EEPROM programming",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "469 - 473",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90029-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900299",
author = "A. Concannon and A. Mathewson and F. Piccinini and G.L. Mei and R. Bez and C. Lombardi",
abstract = "A new model for hot-electron and hot-hole injection is presented. The model has been integrated into a two-dimensional device simulator for the purpose of flash EEPROM programming simulation. The model is demonstrated to be accurate over a range of floating gate voltages, by comparison with measured data from flash EEPROM devices of different gate lengths under different programming conditions."
}
@article{Whiston1994475,
title = "Characterization and manufacturability of a 200 Å gate oxide",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "475 - 483",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90030-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900302",
author = "S. Whiston and R. Stakelum and M. O'Neill and W. Lane",
abstract = "This paper reports on work carried out on the optimization of gate oxide quality on a 1.0 μm BiCMOS process. Due to the complexity of the process, the gate oxide defectivity was improved by partitioning the process into key process blocks and examining the contribution of each block to the overall defect level. Case studies from each block are presented which describe the weaknesses identified and the solutions implemented, which have resulted in a robust and manufacturable process. A short loop process monitor is also described."
}
@article{Kennedy1994485,
title = "Plasma-grown oxides on silicon with extremely low interface state densities",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "485 - 489",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90031-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900310",
author = "G.P. Kennedy and S. Taylor and W. Eccleston and M.J. Uren",
abstract = "Plasma-grown oxides on silicon with midgap interface state densities less than 1010 cm−2 eV−1 have been obtained using low process temperatures (<120°C). Slow and fast interface state densities were measured over a wide frequency range by two different techniques: the quasistatic (CV) and the conductance (Gp/w) methods. Careful attention to system apparatus design, cleanliness and operation are thought to be the main factors responsible for the low interface trap densities."
}
@article{Lanzoni1994491,
title = "Characterization of flash structures erased with ultra-short pulses",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "491 - 494",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90032-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900329",
author = "Massimo Lanzoni and Carlo Riva and Piero Olivo",
abstract = "Flash memories are normally erased by means of high-field electron tunnelling from the floating gate into the source. As a consequence the time needed is generally two orders of magnitude larger (≈ 1 ms vs. ≈ 10 μs) than that used for writing, and is obtained by means of much higher currents due to channel hot electrons. It is important therefore to determine whether it is possible to reduce the erase time, in order to make it comparable with that used for writing. With regard to such a problem, this work describes the results of a comprehensive and detailed characterization of flash structures aimed at evaluating how ultra-short, high voltage erasing pulses affect the reliability of the device."
}
@article{Bellafiore1994495,
title = "Thin SiO2 films nitrided in N2O",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "495 - 500",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90033-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900337",
author = "N. Bellafiore and F. Pio and C. Riva",
abstract = "Thin oxide nitridation in N2O has been demonstrated to improve the dielectric characteristics in terms of charge to breakdown and trapping under current injection. In this work we compare the results obtained with the RTP and conventional oven nitridation technologies. Both reference oxide and nitrided oxide samples have been considered. Auger electron spectroscopy provided the nitrogen depth profiles. The electrical characterization has been performed by means of the constant current stress and exponential current ramp stress techniques, as well as high-frequency and quasi-static capacitance-voltage (C-V) measurements for interfacial state density determination as a function of the injected charge."
}
@article{Bréelle1994501,
title = "SIMS study of rapid nitridation of silicon dioxide thick films in an ammonia ambient",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "501 - 505",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90034-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900345",
author = "E. Bréelle and S. Rigo and J.A. Kilner and J.-J. Ganem",
abstract = "Thick silicon dioxide films of 1.5 μm thickness have been nitrided at temperatures of 700°C and 800°C for 30, 60 and 300 s in a lamp-heated furnace at atmospheric pressure using ammonia. A mechanism of interstitial diffusion of ammonia, together with its reaction with silica, is suggested to explain the exponential shape of the nitrogen profiles in the nitrided 1.5 μm silica films. From this analysis we have extracted the values of the effective reaction coefficient k★ and of the effective diffusion coefficient D★, both correlated by xo, the exchange length for the exchange of oxygen atoms by imine radicals."
}
@article{Brożek1994507,
title = "Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "507 - 514",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90035-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900353",
author = "Tomasz Brożek and Andrzej Jakubowski",
abstract = "The degradation phenomena and charge build-up during high-field Fowler-Nordheim stress in silicon dioxide layers of MOS structures, pre-degraded by ionizing radiation, has been studied from the point of view of dielectric strength wear-out and long-term reliability. External bias of both polarities was applied to the structures during irradiation to separate generated carriers, force the current flow, and to enhance or inhibit radiation-induced degradation. It has been found that breakdown and wear-out properties of the oxides remain unchanged after the irradiation regardless of irradiation conditions. On the other hand, while the rate of electron trap generation during the prolonged stress has not been found sensitive to irradiation, we have found that the initial voltage transients during constant-current stress may be strongly affected by the changes in the radiation-induced hole trap occupancy. The character of the initial transient may indicate both net positive or negative charge build-up, depending on the hole trap occupancy prior to the high-field degradation."
}
@article{Zhao1994515,
title = "MOSFET degradation during substrate hot electron stress",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "515 - 522",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90036-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900361",
author = "S.P. Zhao and S. Taylor and A. McPhie",
abstract = "The reliability of n-channel MOSFETs during hot electron injection is studied using the SHE technique on CMOS samples. Results show the degradation dependence of the oxide bulk and interface over the field range from 0.5 to 6 MV cm−1 for different injection fluence levels, which has been conveniently monitored using subthreshold current measurements."
}
@article{Olivo1994523,
title = "Quantum effects in accumulated MOS thin dielectric structures",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "523 - 531",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90037-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490037X",
author = "Piero Olivo and Jordi Suñé",
abstract = "The role of quantum effects, strongly modifying the physics of SiSiO2 interfaces in accumulated thin-oxide MOS structures, is reviewed and discussed. The main differences with respect to the classical case are analysed: in particular, it is shown that the semiconductor voltage drop and the oxide barrier height for Fowler-Nordheim tunnel injection are largely modified by the quantization of the accumulation layers. The dependence of the barrier height on the oxide field has a remarkable impact on the modelling of thin oxides: in particular, the Fowler-Nordheim current is shown to be correctly estimated only if quantum effects are correctly taken into account."
}
@article{Rausch1994533,
title = "Electrical properties of thin high- dielectric Ta2O5 films",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "533 - 537",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90038-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900388",
author = "N. Rausch and E.P. Burte",
abstract = "The electrical properties and the conduction mechanisms of leakage current in tantalum pentoxide (Ta2O5) prepared by a low pressure metal organic chemical vapour deposition (LPMOCVD) process have been studied. After deposition, the films have been annealed at temperatures up to 900°C in oxygen and nitrogen ambient. The conduction mechanisms in polycrystalline Ta2O5 films are discussed."
}
@article{Dutoit1994539,
title = "Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "539 - 551",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90039-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900396",
author = "M. Dutoit and D. Bouvet and J. Mi and N. Novkovski and P. Letourneau",
abstract = "Thin silicon dioxide (SiO2) films nitrided by rapid thermal processing (RTP) in ammonia and nitrous oxide are compared. Their electrical characteristics (oxide and interface trapped charge densities, resistance to high-field stress, breakdown charge) are correlated with the concentration of nitrogen at the Si/SiO2 interface. An optimum in several parameters is found for very light nitridations (0·5-1 at.% N). In this case, a significant improvement in the reliability of non-volatile memories (EEPROMs) is anticipated."
}
@article{Martin1994553,
title = "Evaluation of the lifetime and failure probability for inter-poly oxides from RVS measurements",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "553 - 557",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90040-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490040X",
author = "Andreas Martin and Paula O'Sullivan and Alan Mathewson and Barry Mason and Clive Beech",
abstract = "In this paper a practical characterization methodology for inter-poly oxides is described. Three different inter-poly oxides were tested, characterized and compared. The test included Constant Voltage Stress (CVS) and Ramped Voltage Stress (RVS) measurements on small area capacitors and only RVS on large area capacitors. It is confirmed that the 1/E Berkeley model is suitable for inter-poly oxide characterization. A method for the prediction of the failure probability from RVS data of large area capacitors at operating conditions is demonstrated on the basis of the 1/E model for the comparison of the inter-poly oxides."
}
@article{Homann1994559,
title = "Relaxational polarization and charge injection in thin films of silicon nitride",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "559 - 566",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90041-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900418",
author = "M. Homann and H. Kliem",
abstract = "Relaxational polarization phenomena and charge injection in silicon nitride deposited on an n-type silicon substrate are studied. After application of low electric fields (< 1 MV cm−1), currents with a time dependence j∼t−α, α ≈ 1 in a time range 500 ns⩽t⩽ 10,000 s flow to the dielectric. After short circuiting, currents with the same time behaviour but opposite sign flow back in the outer circuit. These currents are due to reversible protons fluctuations within the silicon nitride. At higher fields strengths, a charge injection process sets in. About 0·05 s after application of a field E = 3·5 MV cm−1, the currents deviate from the t−1 law and become constant. This charge injection process depends upon the density of protons within the silicon nitride."
}
@article{Kaabi1994567,
title = "Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "567 - 576",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90042-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900426",
author = "L. Kaabi and C. Gontrand and B. Remaki and F. Seigneur and B. Balland",
abstract = "The experimental investigation reported in this paper focuses on the effect of induced implantation damage on the boron diffusion process. Boron is implanted at various fluences and energies in Cz-(100) silicon through different oxide layer thicknesses. Rapid thermal Annealing (RTA) is used to activate shallow p+ layers (0·1–0·15 μm) following boron implantations Concentrations versus depth boron profiles are measured using a secondary ion mass spectrometry (SIMS) analyser. An enhanced boron diffusion is detected in the tail region when the oxide thickness decreases. If the concentration peak is located at the oxide/silicon interface or in the substrate, further implantation damage is generated. This observed enhanced boron diffusion is thus attributed to the implantation-induced damage. The point defects, which act as a driving force for this enhanced boron diffusion at different annealing stages, are detected by the deep level transient spectroscopy (DLTS) technique. In particular, the effect of knocked-on oxygen during the implantation step on the generation of deep centres and defects is investigated. Finally, all the results reveal that DLTS coupled to SIMS analysis provides an efficient method with which to identify the origin and the nature of implanted and RTA related defects."
}
@article{LeBihan1994577,
title = "Impact of furnace nitridation time in N2O ambient on the quality of the Si/SiO2 system",
journal = "Microelectronics Journal",
volume = "25",
number = "7",
pages = "577 - 582",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90043-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900434",
author = "R. Le Bihan and E. André-Benoit and C. Papadas and F. Pio and C. Riva",
abstract = "The impact of the furnace nitridation time in N2O ambient on the quality of the Si/SiO2 system is analyzed in detail. It is shown that, for a high temperature furnace nitridation process step, a long duration of nitridation may give rise to degradation phenomena for MOS structures grown on n-type Si, whereas this is not the case for MOS devices formed on p-type Si substrate. A qualitative model which explains this anomalous behaviour is also proposed."
}
@article{tagkey1994iii,
title = "Thanks for the memories",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "iii - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90055-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900558",
key = "tagkey1994iii"
}
@article{tagkey1994v,
title = "Materials, process science & technology at Sandia's center for compound semiconductor technology: CCST",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "v - xii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90056-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900566",
key = "tagkey1994v",
abstract = "The CCST embodies a wide range of capabilities for advancing the stae of the art in compound semiconductor device development. The next generation of devices will depend critically on advances in materials and materials processing, and the CCST has been at the forefront in developing both the new materials and the necessary processing techniques to realize exciting new device concepts. In these efforts, Sandia's CCST is interested in increasingly teaming with the private sector to accelarate the conjunction between research and development and near-term industry applications. Numerous companies are already engaged in collaborative efforts with Sandia; these include"
}
@article{John1994xiii,
title = "Creating efficient memory models in VHDL",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xiii - xviii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90057-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900574",
author = "John and Wilson",
abstract = "Modelling memory devices can create problems when small-model techniques are applied to larger device models. This paper examines ways to minimise the effects of these scale problems by using different modelling techniques available in the VHDL modelling language. Trade-offs in model speed of execution, code complexity and simulator capacity requirements are examined and discussed."
}
@article{Richard1994xix,
title = "Development of a 50,000-gate programmable logic device for gate array prototyping",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xix - xxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90058-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900582",
author = "Richard and Shaw Terrill",
abstract = "Systems designers want the cost and integration benefits from custom-logic solutions, but must mange the risk and cost of design errors. Several strategies have evolved to address this problem, with the two most common being design simulation, where a software model of the design is tested with simulated test vectors in an attempt to find error conditions, and emulation, where a hardware model of the design is tested with the same vectors, to attempt to find any errors. The principle difference between the two validation methods is how quickly they can identify errors in a design."
}
@article{tagkey1994xxiii,
title = "JM-MKC link",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xxiii - xxv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90059-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900590",
key = "tagkey1994xxiii",
abstract = "Johnson Matthey Electronics (HQ in Spokane, Wash., USA) and Mitsubishi Kasei Corp., have agreed to form a Tokyo-based joint venture that will create the world's largest supplier of semiconductor sputtering targets."
}
@article{tagkey1994xxvi,
title = "World's fastest DAC from Rockwell",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xxvi - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90060-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900604",
key = "tagkey1994xxvi",
abstract = "Rockwell Telecommunications, Newbury Park, CA, USA, has introduced the world's fastest Digital to Analog Converter (DAC). The new 10-bit DAC, designed and manufactured by Rockwell's Microelectronics Technology Center (MTC), operates at clock and data speeds greater than 1200 MHz while consuming less than 800 mW of operating power. “This DAC targets the growing fibre-to-the-curb, and eventually fibre-to-the-home, datacoms market. This is a market which is gaining momentum in regions such as Europe, where large infrastructure investments are being made to upgrade communications systems to fibre optics,” said Deepak Mehrotra, director of marketing for MTC."
}
@article{tagkey1994xxvii,
title = "Toshiba develops world's first 3.5-inch overwritable optical disk",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xxvii - xxviii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90061-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900612",
key = "tagkey1994xxvii",
abstract = "Toshiba Corporation has developed the world's first high capacity 3.5-inch overwritable optical disk drive. Data can be simply written to the phase-change optical disk that the system uses, and can also be rewritten by overwriting and partially or totally deleted."
}
@article{tagkey1994xxix,
title = "IBM scientists demonstrate multilevel optical disks",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xxix - xxx",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90062-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900620",
key = "tagkey1994xxix"
}
@article{tagkey1994xxxi,
title = "NTT discovers ultra-fine magnetic structure",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "xxxi - xxxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90063-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900639",
key = "tagkey1994xxxi"
}
@article{Nur1994399,
title = "The high-speed performance of p-Si/n-Si1−xGex/CoSi2 Schottky collector HBTs",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "399 - 406",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90064-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900647",
author = "O. Nur and M. Willander",
abstract = "We investigated the high-speed performance of Si1−xGex/CoSi2 Schottky collector heterojunction bipolar transistors (SCHBTs). The fact that a Si/Si1−xGex/CoSi2 SCHBT can suppress the base push out and eliminate the collector charging time, which is a delay component that makes a sizable contribution in high-speed heterojunction bipolar transistors (HBTs), makes it possible to obtain very high and current-stable speeds with this structure. Analysis of the different delay components contributing to the emitter-to-collector delay time shows that for Schottky collector transistors with a base thickness of 300 Å or less, the structure should be optimized to minimize the emitter delay time even at high collector current densities in order to further improve the speed. An advantage is the lower power consumption when this SCHBT is compared with conventional HBTs."
}
@article{Celma1994407,
title = "Generation of current conveyor based sinusoidal oscillators for integrated circuits",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "407 - 414",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90065-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900655",
author = "Santiago Celma and Pedro A. Martínez and Inmaculada Gutiérrez",
abstract = "A representative catalogue of high-frequency sinusoidal oscillators using the current conveyor as the active element is proposed. To the inherent advantages of current mode processing is added compatibility with the CMOS technology of the proposed topologies. The new structures potentially mean a drastic reduction in silicon area and an expansion in the frequency range of operation as compared with their counterparts in voltage mode."
}
@article{Taylor1994415,
title = "Testing for functional defects in embedded digital-to-analogue converters using dynamic stimuli and transient response analysis",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "415 - 424",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90066-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900663",
author = "D. Taylor and P.S.A. Evans and T.I. Pritchard",
abstract = "Transient response analysis (TRA) [1–4] is an emerging technique for testing linear sub-systems embedded in mixed-signal integrated circuits. Digital-to-analogue converters (DACs) are a special case of mixed-signal cells which appear at the boundaries of the two subsystems and encompass specialist test problems [4]. This paper describes how pass/fail limits are set in a production test through an analysis of functional defects, and presents a new normalising process permitting extra discernibility in transient response analysis."
}
@article{Zhimeng1994425,
title = "Novel extension of the Scharfetter-Gummel scheme for a multi-dimensional current continuity equation",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "425 - 435",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90067-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900671",
author = "Teng Zhimeng and Tong Qinyi",
abstract = "According to the necessary criteria which a good discretization scheme must satisfy, this paper presents a generalized version of the Scharfetter-Gummel scheme for a multi-dimensional current continuity equation, and analyzes the discretization error associated with the crosswind diffusion for conventional and present schemes. Both theoretical and numerical results show that the present scheme is superior to the conventional scheme, so it can be substituted for the conventional scheme in semiconductor device simulations."
}
@article{PD1994437,
title = "Modified Fredkin gates in logic design",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "437 - 441",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90068-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490068X",
author = "P.D. and Picton",
abstract = "A modified Fredkin gate is proposed as a basic building block for low-energy computing. Essentially the modified Fredkin gate is a simple crossover switch, but it has the potential to be implemented optically. It therefore appears to be a good choice as a building block for future computers. This paper shows that the modified Fredkin gate can be used to implement multi-valued logic, threshold logic and array logic. The result is that the same basic architecture can be used to implement many different logic design techniques, so that comparisons can be made between them."
}
@article{Tudor1994443,
title = "Optimal extraction of series resistances in vertical BJTs/SOI",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "443 - 450",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90069-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900698",
author = "Bogdan Tudor and Adrian M. Ionescu and Alain Chovet and Mihai-Dan Steriu",
abstract = "This paper presents a fast optimal extraction method for bipolar junction transistors (BJT) series resistances. The results are used to feed back into the device design and the underlying physics of BJTs with important base series resistance (related, for example, to the small dimensions and the special configuration of SOI devices)."
}
@article{Xiaoyu1994451,
title = "On the efficiency of a routing model: KKD",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "451 - 455",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90070-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900701",
author = "Xiaoyu and Song",
abstract = "Routing is a crucial problem in the VLSI layout design automation process. In this paper we study the channel routing problem for multiterminal nets in the knock-knee diagonal model (KKD), where the grid consits of right and left tracks displayed at +45° and −45°. We give three results in KKD by a unified and simple algorithm. Let d be the density of a given channel routing problem and w the width of channel. We have: (a) if all nets are two-terminal nets, then d + 1 is an upper bound to w (solved optimally); (b) if all nets are two- or three-terminal nets, then [3d2] + 1 is an upper bound to w; (c) 2d is always an upper bound to w in KKD."
}
@article{MuhammadTaher1994457,
title = "Current-mode multiphase oscillator using current followers",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "457 - 461",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90071-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490071X",
author = "Muhammad Taher and Abuelma'atti",
abstract = "A multiphase current-mode oscillator circuit is presented. The oscillator can produce N currents equal in amplitude and equally spaced in phase. The circuit uses two current followers for each phase. Simulation results are included."
}
@article{LJM1994462,
title = "Germanate glasses: Structure, spectroscopy, and properties: Alfred Margaryan and Michael A. Pillavin, Artech House Inc., Norwood, MA, 1993, 181 pp., £58.00",
journal = "Microelectronics Journal",
volume = "25",
number = "6",
pages = "462 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90072-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900728",
author = "L.J.M. and Zivković"
}
@article{Roy1994iii,
title = "GaAs vs silicon: The designer's role",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "iii - iv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90073-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900736",
author = "Roy and Szweda",
abstract = "As readers will by now know, my position as Managing Editor of Microelectronics Journal is but one of my tasks: I am also Editor of III–Vs Review, the world's only magazine devoted to compound semiconductors. Despite all the attention given over to mainstream silicon much happens in the compound arena every month and I like to crossover to bring MEJ readers a little insight into what is going on over the other side of the fence."
}
@article{P1994v,
title = "Flash memories on the rise",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "v - viii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90074-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900744",
author = "P. and Harris",
abstract = "Numerous semiconductor manufacturers are proceeding with plans for full-scale operation of their flash memory businesses. Leading names in the USA and Japan are involved and a new report has recently been launched by Frost and Sullivan. Here we take a look at which companies are involved, what their commitments are likely to be and how much the market is likely to grow to."
}
@article{tagkey1994ix,
title = "Tricord and vitesse announce strategic partnership in Pentium multiprocessor system development",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "ix - xi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90075-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900752",
key = "tagkey1994ix",
abstract = "Tricord Systems, Inc. and Vitesse Semiconductor Corp. have announced a long-term strategic relationship coupling Vitesse cache controller and data communication products and Tricord's market leading family of enterprise servers. Tricord is currently developing a mainstream Pentium Tm processor-based system using Vitesse's VSP947/948 multi-processor (MP) cache controller chipset."
}
@article{Roy1994xiii,
title = "PEPTITE — Performance packaging & interconnection techniques",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "xiii - xvi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90076-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900760",
author = "Roy and Szweda",
abstract = "The European Eureka project EU462 “PEPTIDE” has entered its final phase and its results are already providing significant boost for the competitive advantage of European MCM manufacturing industry. On the eve of a series of Open Seminars to explain and publicise the project we feature an overview of the work and members."
}
@article{tagkey1994xvii,
title = "Temic unveils bipolar fab",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "xvii - xxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90077-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900779",
key = "tagkey1994xvii"
}
@article{Misiewicz1994xxiii,
title = "Zn3P2—a new material for optoelectronic devices",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "xxiii - xxviii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90078-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900787",
author = "J. Misiewicz and L. Bryja and K. Jezierski and J. Szatkowski and N. Mirowska and Z. Gumienny and E. Placzek-Popko",
abstract = "The fundamental optical and electronic parameters of Zn3P2 are presented. Mg-Zn3P2 structures are examined as solar energy converters and broad range photodetectors. A distinct photodichroism observed for junctions prepared on oriented single crystals is applied in light polarisation step indicators. Zn3P2 thin films were obtained by vacuum evaporation and their optical properties were examined."
}
@article{M1994xxix,
title = "The physics and technology of low dimensional structures",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "xxix - xlvi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90079-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900795",
author = "M. and Henini"
}
@article{Hsu1994xlvii,
title = "A knowledge-based simulation environment for the early design of multichip modules",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "xlvii - lix",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90080-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900809",
author = "P. Hsu and R. Senthinathan and J.W. Rozenblit and J.L. Prince",
abstract = "A knowledge-based simulation environment is developed to facilitate the early design of Multichip Modules (MCMs). Electrical system performance measures such as module clock frequency, etc. are predicted and analyzed for different interconnect and packaging technologies. Performance-limiting factors such as power dissipation, coupled noise, and simultaneous switching noise are also included in this work. CMOS based MCMs for workstation applications are used to demonstrate the feasibility of the system in development."
}
@article{Haskard1994323,
title = "CAHL — computer aided hybrid layout software",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "323 - 334",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90081-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900817",
author = "M.R. Haskard and M.A. Macdonald and G. Pilkington",
abstract = "Thick film hybrid is the oldest microelectronic technology, yet it has been the last to move into using computer aided/ automated design methods. CAHL, or Computer Aided Hybrid Layout, is a simple yet powerful software package that allows experienced professional design engineers and students alike to create thick film hybrid circuits quickly. The software can handle conventional and complementary processes. Features include automatic resistor sizing, cross-over and via formation; parameter extraction; generation of SPICE simulation files; net lists, pick-and-place machine position information and component trim information files to assist with manufacture and testing."
}
@article{Litovski1994335,
title = "ASCOTA3 ADIL: a new reconfigurable CMOS analogue VLSI design framework",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "335 - 351",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90082-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900825",
author = "V. Litovski and D. Glozić and R. Bayford",
abstract = "In this paper, a new analogue design framework is described. This utility employs detailed device models, a fully hierarchical top-down design approach and a specially developed design language, ADIL, for describing new analogue building blocks. The language is high level, and supports many features that enable the easy inclusion of new designs into the design library. Two conventional CMOS op. amps. have been designed, simulated and fabricated to verify the design strategy. The results are presented to prove the reliability of the tool."
}
@article{Gao1994353,
title = "The floating gate MOS device as an analogue trimming element",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "353 - 361",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90083-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900833",
author = "Weinan Gao and W. Martin Snelgrove",
abstract = "This paper investigates the use of floating gate MOS devices for analogue trimming. A floating gate MOSFET structure, in which tunnelling occurs at the corners of a polysilicon slab, has been fabricated using a standard 1.2 μm n-well CMOS process. A three-dimensional device simulator, DAVINCI, is used to characterize the field enhancement due to geometry. The analogue storage performance of the floating gate is evaluated. The charge-transfer behaviour of floating gate MOS devices is analysed and modelled. This model describes the charging and discharging of the floating gate, and provides insights to the design of analogue floating gate devices. A feedback-based programming strategy is also discussed."
}
@article{Walsh1994363,
title = "Goal-directed simulated annealing and simulated sintering",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "363 - 382",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90084-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900841",
author = "P.A. Walsh and D.M. Miller",
abstract = "Recently, Sastry et al. [1] proposed a general procedure to estimate the cost of a minimal solution to a combinatorial optimization problem instance. Such an estimate can be used to determine termination criteria for general purpose combinatorial optimization techniques. We have extended this idea and designed an adaptive cooling schedule for simulated annealing and simulated sintering based on the cost of a minimal solution to a problem instance [2]. With our approach, a schedule of target-costs is determined based on the cost of an easily located solution and the cost (exact, estimated or lower-bound) of a minimal solution. For each target-cost, we search for a solution of cost less than or equal to the target-cost using a range of values for the control-parameter temperature.
Two key attributes distinguish our approach from other cooling schedules. First, our schedule is goal-directed. Second, the value of temperature is allowed to increase as well as decrease. We call our schedule the extended goal-directed cooling schedule.
Idealized placement (an abstraction of Symmetrical Array Field Programmable Gate Array placement) is used to illustrate the effectiveness of our cooling schedule. We compare the performance of our schedule to the performance of a well known schedule proposed by Huang [3]. In terms of terminal solution quality, we show that our schedule performs better than Huang's schedule, and that this difference in performance is statistically significant. In addition, we show that in terms of execution time, simulated sintering using the extended goal-directed schedule performs better than simulated annealing using the extended goal-directed schedule without incurring a statistically significant penalty in terminal solution quality."
}
@article{R1994383,
title = "Fuzzy logic for embedded control solutions",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "383 - 392",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90085-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490085X",
author = "R. and Bannatyne",
abstract = "Many excellent and informative books and papers have been written on the subject of fuzzy logic and its applications. For the most part, emphasis has been placed either on the underlying mathematical theory of fuzzy sets [1], or on providing a study into the ‘glamorous’ applications where it has been used [2]. This technical report provides a compromise of both areas, in order to give practising engineers a theoretical background of fuzzy logic along with an understanding of its role in today's electronics industry, and what all the fuss is about."
}
@article{Keatch1994393,
title = "A microstructure for detecting the stress distribution in thin coatings deposited on to silicon substrates",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "393 - 400",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90086-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900868",
author = "Robert P. Keatch and Brian Lawrenson",
keywords = "stress detection in coatings",
keywords = "sensors",
keywords = "microengineering coatings",
keywords = "miniature cantilevers",
keywords = "thin film technology",
abstract = "A microscopic gauge is described which may be used for detecting and measuring the stress which is present in thin coatings which are deposited on to silicon substrates. An array of these structures may be formed on the substrate by means of microengineering fabrication processes, and this enables the uniformity of the stress to be mapped. Evaluation is made from an SEM photomicrograph."
}
@article{SL1994401,
title = "Application and design with analog integrated circuits: J.M. Jacob, Prentice Hall International, NJ, 2nd edition, 1993, 575 pp., £20.95 (paperback)",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "401 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90087-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900876",
author = "S.L. and Hurst"
}
@article{MS1994401,
title = "An introduction to VLSI process engineering: Y. Naka, K. Sugawara and C. McGreavy (editors), Chapman and Hall, London, 1993, 210 pp., £35.00",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "401 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90088-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900884",
author = "M.S. and Harris"
}
@article{SL1994402,
title = "Algorithms for synthesis and testing of asynchronous circuits: L. Lavagno and A. Sangiovanni-Vincentelli, Kluwer Academic Publishers, Norwood, MA, 1993, 239 pp., £72.95, US$97.50, Dfl.200.00",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "402 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90089-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900892",
author = "S.L. and Hurst"
}
@article{Litovski1994402,
title = "Discrete event simulation in C: Kevin Watkins, McGraw-Hill, Maidenhead, 1993, 384 pp., £34.95",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "402 - 403",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90090-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900906",
author = "V.B. Litovski and M. Damnjanovic"
}
@article{SL1994403,
title = "Introduction to VLSI technology: T.E. Price, Prentice Hall, London, 1994, 280 pp., £17.95 (paperback)",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "403 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90091-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900914",
author = "S.L. and Hurst"
}
@article{MS1994403,
title = "Introduction to digital logic design: J.P. Hayes, Addision-Wesley, Reading, MA, 1993, 813 pp., £22.95",
journal = "Microelectronics Journal",
volume = "25",
number = "5",
pages = "403 - 404",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90092-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900922",
author = "M.S. and Harris"
}
@article{Keith1994i,
title = "Microelectronics industry driver",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "i - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90169-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901694",
author = "Keith and Gurnett"
}
@article{JoAnn1994iii,
title = "Cold cathodes heating up display race",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "iii - v",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90170-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901708",
author = "Jo Ann and McDonald",
abstract = "One small Houston, Texas company called SI Diamond Technology, Inc. (SIDT), in close alliance with America's famed computer consortium, Microelectronics Computer Technology Corp. (MCC) in Austin, Texas is gearing up to give America's new flat panel display race a real run for the money. SIDT and MCC intend to accomplish this lofty goal by pushing field emission displays (FEDs) that are based on amorphic diamond films, into prominence. The question is, can they do it?"
}
@article{tagkey1994vi,
title = "Intel shipping bare die Pentiums",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "vi - xv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90171-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901716",
key = "tagkey1994vi"
}
@article{tagkey1994xvi,
title = "World DSP sales to double by 1999 with recovery, declining prices, broadening applications",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "xvi - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90172-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901724",
key = "tagkey1994xvi"
}
@article{tagkey1994xvii,
title = "Semiconductor production equipment sales to double by 1999",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "xvii - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90173-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901732",
key = "tagkey1994xvii"
}
@article{Jain1994xviii,
title = "A 0.6 micron triple level metal process for high performance application specific integrated circuits",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "xviii - xxv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90174-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901740",
author = "V. Jain and D. Pramanik and M. Weling and C. Gabriel and D. Baker and W. Boardman and J. Eakin",
abstract = "This paper describes a 0.6 micron triple level interconnect scheme for ASIC application. This interconnect scheme has been used with 0.6 micron twin well CMOS technology having polycide gates. Excellent planarization of BPSG films was achieved at a low reflow temperature by using TEOS/03-based APCVD BPSG. Sandwich layers of TiW/Al-1%Cu/TiW were used for interconnects. A void-free Inter-Metal-Oxide (IMO) planarization with good device reliability was achieved using a combination of silicon-rich silane-based PECVD oxide, TEOS-based PECVD oxide and SOG etchback process. In order to achieve the maximum packing density, metal 3 is used as a routing layer and has the same pitch as metal 1 and metal 2 layers. It has been demonstrated that the device and the interconnect reliabilities for this metallization scheme are excellent."
}
@article{Rod1994xxvii,
title = "Diamond films 1993",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "xxvii - xxxi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90175-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901759",
author = "Rod and Barnes"
}
@article{Dias1994253,
title = "Sigma-delta modulators for high-resolution and wide-band A/D converter applications",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "253 - 277",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90176-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901767",
author = "V.F. Dias and V. Liberali and G. Palmisano",
abstract = "High-resolution and wide-band sigma-delta (∑Δ) A/D converters are based on high-order single-stage or cascade modulators and, more recently, also on multibit topologies. This paper reports a comparative study of the most promising modulator topologies available today, paying special attention to a new class of cascade multibit topologies that we have developed which do not require multibit D/A converters. Comparisons are made in terms of design and implementation complexity, sensitivity to amplifier dc-gain and matching between components, thermal noise, amplifier slew-rate and bandwidth, and D/A converter linearity. Design examples are given showing that 12-bit, 14-bit and 16-bit ∑Δ A/D converters with 4 MHz, 1 MHz and 150kHz output rates respectively are possible using state-of-the-art silicon technologies."
}
@article{Brigati1994279,
title = "Speed limitations in CMOS data converters with switch selection networks",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "279 - 285",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90177-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901775",
author = "Simona Brigati and Franco Maloberti and Guido Torelli",
abstract = "This paper presents a design guideline for CMOS data converters using switch selection networks. After a demonstration of the intrinsic speed limitation of such architectures due to the high number of analogue switches, simple equations are provided which allow a preliminary speed evaluation and give an initial estimation of the best switch sizing prior to a more accurate design. These equations are then checked by circuit simulation on a specific architectures to show their effectiveness as a ‘rule of thumb’ for data converter designers."
}
@article{DraganM1994287,
title = "Analysis of Fermi level position in thin polysilicon films",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "287 - 292",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90178-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901783",
author = "Dragan M. and Petković",
abstract = "In this paper, the results of the analysis of the Fermi level position in thin polysilicon films are presented and discussed. The grain boundary carrier trapping model is used to calculate the position of the Fermi level. The results obtained show that, in the case of lightly doped polysilicon, the position of the Fermi level is different from that which is expected in single-crystal silicon. Also, it is found that the temperature dependence of the Fermi level is, in some cases, reversed from the usual case."
}
@article{Çiçekoğlu1994293,
title = "A novel approach to the calculation of nonlinear harmonic distortion coefficients in BJT differential amplifiers",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "293 - 299",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90179-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901791",
author = "Oğuzhan Çiçekoğlu and Hakan Kuntman",
abstract = "The base-driven BJT differential pair is analysed, taking the Early effect into consideration and using a different model. Harmonic distortion coefficients are calculated and an accurate analytical expression representing the total harmonic distortion is proposed. It is shown that this expression leads to a minimum point in total harmonic distortion which cannot be obtained with the SPICE modified Gummel-Poon model that underestimates the contribution of the Early effect, and therefore accurate simulation by SPICE is not possible."
}
@article{MuhammadTaher1994301,
title = "Modelling of uniformly distributed RC lines loaded by series RC combinations",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "301 - 306",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90180-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901805",
author = "Muhammad Taher and Abuelma'atti",
abstract = "A simple model for uniformly distributed RC (URC) lines terminated by a series RC combination is presented. The model consists of only four passive elements. It can be used to predict the response of the URC line and to calculate the rise time, delay time and bandwidth of the loaded URC line. The model is compatible with previously published models for URC lines with different terminations. It can be easily implemented for computer-aided analysis and design of VLSI circuits and systems incorporating URC lines loaded by series RC combinations."
}
@article{Moragues1994307,
title = "Coupling between the front and back interfaces in the gate-controlled P+PN+ diode on silicon-on-insulator",
journal = "Microelectronics Journal",
volume = "25",
number = "4",
pages = "307 - 322",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90181-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901813",
author = "J.-M. Moragues and J. Bouzidi and E. Ciantar and R. Jerisian and J. Oualid and S. Cristoloveanu",
abstract = "Coupling between the front and back interfaces of gate-controlled diodes fabricated on thin-film silicon-on-insulator (SOI) structures is investigated. Lim and Fossum's model has been modified to take into account the influence of the reverse bias, VR, applied to the diode junction. This model is verified by capacitance, leakage current and charge pumping measurements performed by varying the front and back gate voltage as well as VR.
The study demonstrates that the intensity of the interface coupling depends on the thicknesses on the gate and buried oxides, SOI layer thickness, and dopings N1 and N2 near the two interfaces. Appropriate methods are used to extract these parameters."
}
@article{Roy1994i,
title = "1993 IEEE International Electron Device Meeting (IEDM). Washington, DC, USA",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "i - iv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90001-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900019",
author = "Roy and Szweda",
abstract = "The annual IEDM - International Electron Devices Meeting was held in the Washington Hilton and Towers, Washington, DC, USA, December 5–8th, and as usual it attracted some of the world's leading research results. This review can feature only a flavour of the meeting crammed with a multitude of fascinating items. Top of the bill was the first reported results from the 256-Mbit DRAM; an unprecedented three-way international collaboration between IBM, Siemens and Toshiba."
}
@article{tagkey1994v,
title = "News update",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "v - x",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90002-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900027",
key = "tagkey1994v"
}
@article{tagkey1994xi,
title = "Vitesse ASICs in New Teradyne Test System",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "xi - xiv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90003-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900035",
key = "tagkey1994xi",
abstract = "Vitesse Semiconductor Corporation, Carmarillo, CA, USA, has announced that it is shipping volume quantities of a GaAs ASIC for use in Teradyne's J921 production test system. The GaAs design forms the heart of the oiming system for the J921 test system.Itt is a classic example of good design and impressive miniaturization."
}
@article{Keith1994xv,
title = "Design implications of SM component handling",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "xv - xx",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90004-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900043",
author = "Keith and Gurnett",
abstract = "SMT provides a wide variety of options in the manufacture of electronic equipment. It is the potential of these options that creates the excitement of this technology. However, SMT's penetration into real production has been relatively slow compared to the rhetoric it has caused over the last two decades. One aspect that the rhetoric ignores is the impact of SM equipment and processes on design. Most expertswould agree that product, performance and price are almost decided before surface mount is considered.This series of articles looks at some of the issue rraised by component handling that designers should know about."
}
@article{JoAnn1994xxi,
title = "America on display",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "xxi - xxv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90005-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900051",
author = "Jo Ann and McDonald",
abstract = "With all the complexity of a techno-thriller, the US flat panel/high definition display industry is collectively mounting an all-out onslaught on the international marketplace over the next few years. The stakes are high, the players powerful, and the intrigue and mystery is mounting."
}
@article{SL1994xxvi,
title = "Microelectronics in Europe",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "xxvi - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90006-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490006X",
author = "S.L. and Hurst"
}
@article{AxelM1994145,
title = "Micromachining and ASIC technology",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "145 - 156",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90007-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900078",
author = "Axel M. and Stoffel",
abstract = "A technology to fabricate ASICs can also be used to fabricate microelectronic sensors integrated with electronic circuits. The integration of micromechanical sensors or actuators with electronic circuits, however, requires new processes for micromachining the silicon chip so that 3D shapes are generated. These bulk micromachining processes are not usually compatible with IC processing, so there are few integrated bulk micromechanical sensors available today. In contrast, surface micromachining uses the same processes as in modern CMOS technologies. With proper design, such ASIC technologies can produce micromechanical sensors and integrated circuits on the same chip. The problems arising and constraints involved in combining sensor, actuator and IC technology are discussed, and typical examples of progress made during the last five years are given."
}
@article{Vladimir1994157,
title = "Thermal monitoring of microelectronic structures",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "157 - 170",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90008-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900086",
author = "Vladimir and Székely",
abstract = "This paper presents possible solutions for the lifetime thermal monitoring of microelectronic structures. To capture the detailed thermal state of an encapsulated device, insertion of a number of temperature sensors is proposed. A new temperature sensor element is introduced: the thermal-feedback oscillator (TFO). This temperature sensor has a digital output signal, and is therefore suitable for integration with other built-in test circuits such as the boundary scan. The paper investigates the feasibility of the TFO temperature sensor."
}
@article{Dudziak1994171,
title = "Embedding large finite state machines into programmable devices",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "171 - 182",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90009-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900094",
author = "H. Dudziak and F. Reither and H.M. Lipp",
abstract = "There exist powerful CAD tools for the automated synthesis and implementation of finite state machines (FSMs). Programmable logic devices (PLDs) have a short time to market, thus they are widely used for the realization of FSMs. The use of conventional design tools yields results that are often suboptimal because the synthesis tools often do not consider the soecial structure of PLDs. This paper deals with embedding problems of large FSMs into PLDs. It will be shown how the normally inexact specification, an adapted state-coding, as well as well-considered decomposition of large designs, and the choice of the optimal flip-flop type may be used to embed large designs into a minimal number of PLDs."
}
@article{Pratas1994183,
title = "A pipelined subranging analogue-to-digital video convertor with time-interleaved sampling",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "183 - 198",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90010-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900108",
author = "José Pratas and João C. Vital and JoséE. Franca",
abstract = "Video analogie-to-digital convertors are mostly based on the subranging flash and two-step flash architectures owing to their reduced silicon area and power consumption, and also because their operating frequency can be easily extended towards higher frequencies through the adoption of either time-interleaved or pipelined techniques. In this paper an alternative subranging analogue-to-digital convertor architecture is proposed in which the time-interleaved and pipelined techniques are jointly employed in order to achieve further saving of the die area and allow more relaxed speed requirements of the comparators in the flash quantizers. For visiophony applications, with 8-bit resolution and 13·5 MHz conversion frequency, this convertor has been constructed in integrated circuit form using a 1·2 μm CMOS technology, yielding an active area of 2·18 mm2 and a power consumption of 170 mW."
}
@article{JensP1994199,
title = "An asynchronous model for high-level synthesis",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "199 - 213",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90011-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900116",
author = "Jens P. and Brage",
abstract = "This paper presents an asynchronous interface model designed for high-level synthesis. The model represents hardware as a set of sequential processes communicating by level-sensitive asynchronous protocols.
Based on this interface model, a synthesizable subset of VHDL for input specification to high-level synthesis is defined. During synthesis, a simpler representation of the design is required; for this purpose, an extended data flow graph is proposed which supports the same interface model. Finally, a compatible RTL model is defined for the synthesis output.
Conversion from the input language to RTL structures is examined, and a simple example is given."
}
@article{Agotai1994215,
title = "Using ORCAD schematic entry for generating VHDL structural descriptions",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "215 - 218",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90012-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900124",
author = "I. Agotai and P. Keresztes",
abstract = "The possibility of using the well-known ORCAD/SDT as a schematic design tool for the creation of VHDL (VHSIC Hardware Description Language) structural description has been investigated. The transformation from the EDIF format of ORCAD to VHDL is realized in two steps. Since SDL is a well-known pure structural description language, the first step is a conversion into an intermediate SDL format. The second step produces the final VHDL structural description. The source of this program can also be a user-defined (external) SDL format file."
}
@article{Martínez1994219,
title = "Concatenated LFSR makes a weighted built-in logic block observation",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "219 - 228",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90013-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900132",
author = "Mar Martínez and Salvador Bracho",
abstract = "The length of a test sequence is reduced when using random test vector sequences with a weighted probability, provided that the probabilistic distribution in the inputs of the circuit has been optimized using a suitable method. There are algorithms that determine the probabilistic distribution for the logic 1s in the inputs of the circuit under test. In this paper, we propose a circuit structure that allows generation of random test vectors with a weighted probability, and analysis of the response, using multiple input registers implemented as BILBO registers. Accordingly, we have proceeded with the incorporation of these BIST structures in different benchmark circuits, one of them being the ALU of a communication processor."
}
@article{Béla1994229,
title = "Coefficient-dependent logic synthesis of FIR digital filters",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "229 - 235",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90014-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900140",
author = "Béla and Fehér",
abstract = "This paper suggest aa new coefficient-dependent multiplication scheme for Field-Programmable Gate-Array (FPGA) implementation of direct-from Finite Impulse Response (FIR) digital filters. Using conventional design methods, FPGA devices are not very efficient in digital FIR filter implementation due to the plexity of the multipliers. Analysis of filter coefficients shows that a large number of redundant leading sign bits can be found in their two's-complement binary representation. Coefficient-dependent multiplier logic synthesis decreases the number of Configurable Logic Blocks (CLBs) needed by 30–40%, determined by the filter order and the selected coefficient accuracy. Memory-based bit-serial distributed multiplier and accumulator units (DMACs) can be used effectively to realize multipliers of different coefficient size on the XILINX XC4000 third-generation FPGA family."
}
@article{Arató1994237,
title = "A high-level datapath synthesis method for pipelined structures",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "237 - 247",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90015-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900159",
author = "Péter Arató and lstván Béres and Andrzej Rucinski and Robert Davis and Roy Torbert",
abstract = "This paper presents a model and a method for the high-level datapath synthesis of pipelined ASIC architectures, starting with a behavioural description of the system consisting of theoretical operational units with arbitrary operation duration. The method calculates the minimal number of buffers to be inserted, optimally selects the number of types of additional operational units, and determines the minimal number of required copies.
The aim of the procedure is to ensure a latency which can be given in advance, and could not be achieved without additional buffers and extra copies of the operational units. The method provides a solution to the resource allocation problem by establishing a compatibility relation between the concurrent operations. The constraints for the types of processors to be applied can vary, depending upon the hardware resources."
}
@article{Dimitrijev1994249,
title = "Introduction to semiconductor device yield modeling: Albert V. Ferris-Prabhu, Artech House, London, 1992, 91 pp., £52",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "249 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90016-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900167",
author = "S. Dimitrijev and N. Stojadinović"
}
@article{MS1994249,
title = "An introduction to GaAs IC design: S.J. Harrold, Prentice Hall, UK, 1993, 172 pp., £18.99 (paperback)",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "249 - 250",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90017-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900175",
author = "M.S. and Harris"
}
@article{SL1994250,
title = "Electronic circuit cards and surface mount technology: a guide to their design, assembly and application: M.R. Haskard, Prentice Hall, Sydney, Australia, 1992, 227 pp., £16.95 (paperback)",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "250 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90018-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900183",
author = "S.L. and Hurst"
}
@article{PL1994250,
title = "Layout minimization of CMOS cells: R.L. Maziasz and J.P. Hayes, Kluwer Academic Publishers, Norwell, MA, 1992, 168 pp., £44.25, US$66.50, DFl145.00",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "250 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90019-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900191",
author = "P.L. and Jones"
}
@article{Mijalković1994250,
title = "Technology CAD systems: F. Fasching, S. Halama and S. Selberherr (editors), Springer-Verlag, Vienna and New York, 309 pp., 1993, öS896, DM128",
journal = "Microelectronics Journal",
volume = "25",
number = "3",
pages = "250 - 251",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90020-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294900205",
author = "S. Mijalković and N. Stojadinović"
}
@article{tagkey1994i,
title = "Will back end processing take the lead in microelectronics?",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "i - ii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90099-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490099X",
key = "tagkey1994i"
}
@article{tagkey1994iii,
title = "Systolic technology's new FISP speeds up ASIC design",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "iii - vi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90100-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901007",
key = "tagkey1994iii"
}
@article{tagkey1994vii,
title = "Automating programming and handling",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "vii - xiv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90101-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901015",
key = "tagkey1994vii"
}
@article{tagkey1994xv,
title = "Inter-metallic dielectric (IMD) and other high voltage testing",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "xv - xxiii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90102-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901023",
key = "tagkey1994xv",
abstract = "Trying to use standard d.c. parametric test systems for high voltage testing leads to many problems. So many, in fact, that such testing is seldom even attempted. Instead, high voltage testing has historically been done manually with curve tracers [1] or bench instruments. Even when it was justifiable as a 100% screening test, adding high voltage testing to an automatic parametric tester seldom proves effective or practical."
}
@article{tagkey1994xxv,
title = "GaAs ASIC applications: a new feature for 1994",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "xxv - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90103-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901031",
key = "tagkey1994xxv"
}
@article{tagkey1994xxvi,
title = "Vitesse/JPL ASICs tune in to deep space",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "xxvi - xxxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90104-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490104X",
key = "tagkey1994xxvi"
}
@article{tagkey1994xxxiii,
title = "“Mutual profitability”",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "xxxiii - xxxv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90105-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901058",
key = "tagkey1994xxxiii"
}
@article{Pantić199479,
title = "An efficient multiparticle diffusion simulation by an adaptive multigrid method",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "79 - 97",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90106-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901066",
author = "D. Pantić and S. Mijalković and N. Stojadinović",
abstract = "An adaptive multigrid method for efficient multiparticle diffusion simulation is presented. This ensures avoidance of the problem of ‘stiffness’ due to large discrepancies of the particles' characteristic lengths by using a local grid decomposition algorithmic strategy in which each particle of the diffusion system has its own adaptive multilevel grid structure. This numerical approach is implemented in the two-dimensional process simulator MUSIC, whose capabilities are illustrated by the results of coupled point defect and impurity diffusion simulation under local wet oxidation conditions, as well as by the results of complete process flow simulation of the low-voltage power VDMOSFET."
}
@article{Djurić199499,
title = "Some theoretical and technological aspects of uncooled HgCdTe detectors: a review",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "99 - 114",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90107-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901074",
author = "Zoran Djurić and Zoran Jakšić and Zoran Djinović and Milan Matić and Žarko Lazić",
abstract = "This work analyses a relatively new type of Hg1−xCdxTe detector which is used for the detection of CO2 laser radiation (10·6 μm) and which operates at room temperature. In the first part of the work basic parameters of this detector type are given (spectral responsivity, detectivity, time constant) as well as their dependence on starting material parameters (absorption coefficient, carrier concentration, lifetime).
The second part describes the production technology of epitaxial Hg1−xCdxTe layers using the method of isothermal vapour phase epitaxy, as well as the methods of making the detector.
Finally, in the third part of the work, experimental results are presented."
}
@article{Bhaskar1994115,
title = "New linearly tunable CMOS-compatible OTA-C oscillators with non-interacting controls",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "115 - 123",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90108-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901082",
author = "D.R. Bhaskar and Raj Senani",
abstract = "Operational transconductance amplifier capacitor (OTA-C) sinusoidal oscillators have attracted considerable attention recently because they offer several advantages over conventional op-amp-based oscillators, as well as because in conjunction with CMOS OTAs, they lead to the evolution of fully integrated oscillators in CMOS technology. The purpose of this paper is two-fold: first to present three new canonic (employing only two capacitors) four-OTA-C sinusoidal oscillator circuits possessing the capability of providing independent linear control of the frequency of oscillation, and then to describe an approach to converting these structures into CMOS VCOs, which requires a reduced number of components as compared to the CMOS OTA-based approaches used earlier. The validity of the proposed formulations has been confirmed by SPICE simulation results."
}
@article{Gerd1994125,
title = "Self-adaptive space grids in process simulation",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "125 - 132",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90109-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901090",
author = "Gerd and Nanz",
abstract = "In process simulation, even more than in device simulation, fully self-adaptive space grids are important for reasonable CPU times and accurate results. Only a few mathematically sound criteria for solution-based automatic grid control are available which can be implemented in a computer program with reasonable effort. Therefore, most of the strategies for automatic grid control are totally heuristic or derived from physical properties.
In this paper, criteria for automatic space grid control in two-dimensional process simulation are presented. These cover the design of an initial grid for the simulation of a process step such as masked implantation as well as the adaptation of the grid to an existing solution. The dose criterion and the quotient criterion are one-dimensional criteria already used in simulation programs; the criterion of the mixed second derivatives is a new two-dimensional criterion which is presented here for the first time.
Implementation of these criteria cannot be done in a straightforward manner, due to numerical reasons. Some of these numerical aspects are therefore discussed. The results are illustrated by examples."
}
@article{Russell1994133,
title = "Systematic approaches to testing embedded analogue circuit functions",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "133 - 138",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90110-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901104",
author = "G. Russell and D.S. Learmonth",
abstract = "A major obstacle in the design of very large scale integration (VLSI) circuits is the problem of efficiently testing the devices immediately after fabrication and also in the field. After each advance in semiconductor processing technology, the subsequent increase in complexitu of the circuits fabricated has aggravated the difficulties of fault detection. Recent developments in processing technology have not only increased the complexity of the circuits which can be produced but also have, in this instance, added another dimension to the testing problem, i.e., testing analogue functions embedded in a VLSI circuit."
}
@article{SL1994139,
title = "Boundary-scan test: a practical approach: H. Bleeker, P. van den Eijnden and F. de Jong, Kluwer Academic Press, Norwell, MA 1993, 224 pp., US$70.00, £50.75, Dfl. 137.75",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "139 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90111-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901112",
author = "S.L. and Hurst"
}
@article{SL1994139,
title = "IDDQ testing of VLSI circuits: R.K. Gulati and C.F. Hawkins (editors), Kluwer Academic Publishers, Norwell, MA, 1993, 124 pp., £58.00, US$80.00, Dfl. 157.50",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "139 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90112-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901120",
author = "S.L. and Hurst"
}
@article{tagkey1994139,
title = "Engineering tables and data: A.M. Howatson, P.G. Lund and J.D. Todd, Chapman and Hall, London, 2nd edition, 1991, 181 pp., £19.95",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "139 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90113-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901139",
key = "tagkey1994139"
}
@article{SL1994139,
title = "A dictionary of scientific units: H.J. Jerrard and D.B. McNeil, Chapman and Hall, London, 6th edition, 1992, 254 pp., £15.95",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "139 - 140",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90114-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901147",
author = "S.L. and Hurst"
}
@article{Z1994140,
title = "Digital integrated circuit testing from a quality perspective: Eugene R. Hnatek, International Thomson Publishing, London, 1993, 179 pp., £41.50",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "140 - 141",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90115-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901155",
author = "Z. and Nikolić"
}
@article{D1994141,
title = "Phase-locked loops: Roland E. Best, McGraw-Hill, New York, 2nd edition, 1993, 369 pp.",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "141 - 142",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90116-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901163",
author = "D. and Krstić"
}
@article{Jevtić1994142,
title = "Reliability analysis and prediction (a methodology oriented treatment): K.B. Misra, Elsevier Science Publishers BV, Amsterdam, 1992, 889 pp., Dfl.545.00/US$311.50",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "142 - 143",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90117-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901171",
author = "M. Jevtić and N. Stojadinović"
}
@article{Mijalković1994143,
title = "Numerical simulation of submicron semiconductor devices: Kasutaka Tomisawa, Artech House Inc., Boston and London, 1993, 341 pp.",
journal = "Microelectronics Journal",
volume = "25",
number = "2",
pages = "143 - 144",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90118-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490118X",
author = "S. Mijalković and N. Stojadinović"
}
@article{tagkey1994i,
title = "25 Years of microelectronics journal?",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "i - ii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90147-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901473",
key = "tagkey1994i"
}
@article{NinoslavD1994iii,
title = "Quarter century of field of microelectronics and “microelectronics journal”: Joint crossroads for further progress and development",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "iii - ix",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90148-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901481",
author = "Ninoslav D. and Stojadinovic",
abstract = "It is well known that MOS devices and technologie have been the workhorse, while MOS memories have been the vehicles that have provided the driving force, for tremendous progress and development in the field of microelectronics during the last 25 years. However, the fascinating evolution of the MOSFET started long before the modern transistor era and ends with today's VLSI circuits' spanning 65 years of inventions, innovations and development."
}
@article{GordonE1994xi,
title = "A quarter of a century of microelectronics",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "xi - xv",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90149-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490149X",
author = "Gordon E. and Moore",
abstract = "1968 was a pivotal year in microelectronics. It marked the beginning of the broad industry advance into the realm we now call large scale integration, or LSI. It was the year Microelectronics Journal began chronicling advances in microelectronics. And, coincidentally, it was also the year Intel Corporation was founded. Thus, the history of Intel in many ways mirrors the history of the industry over the last twenty-five years. This article will review some of the developments in the industry from the perspective I have had at Intel."
}
@article{Jan1994xvii,
title = "A quarter century of microelectronics: what happened in analog electronics and what is ahead?",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "xvii - xxii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90150-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901503",
author = "Jan and Davidse",
abstract = "The advent of monolithic technology has brought about profound changes in the implementation of electronic signal processing functions and in the design of the associated circuity. In particular in the area of analog signal processing, essentially new system architectures as well as circuitry for basic functions have had to be conceived. By and large the methodology in the analog area has tried to follow the approaches that had proved their usefulness in digital system design. This paper focuses on two alternative approaches which present themselves as natural matches to the functional aspects of analog signal processing. A plea is made for enhanced emphasis on these methods in future work."
}
@article{Michiyuki1994xxiii,
title = "Quarter century of microelectronics in Japan",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "xxiii - xxviii",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90151-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901511",
author = "Michiyuki and Uenohara",
abstract = "Rapid advancement of microelectronics technology has helped to make great progress, not only for information technology but also has helped to create new technologies, such as optoelectronics, mechatronics, bioelectronics and others. It has reallyexerted a revoluutionary influence on industry and society as well. We have all been enjoying the results of a microelectronics revolution and Japan has been no exception."
}
@article{JoAnn1994xxix,
title = "Realistic expectations",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "xxix - xxxi",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90152-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490152X",
author = "Jo Ann and McDonald",
abstract = "In the mid-1980s, if you quietly stepped into the fledgling gallium arsenide technology wells, there rumbled about the GaAs underground a glimmer of hope for…if not success…at least some long-overdue respect. Ten times faster than Si? Maybe only six times faster? Still, this was fast stuff, and fast means new markets. Shades of the old silicon heydays in The Valley. Another Intel? More AMD's? One could easily dream, for there was truly nothing like “the old days.” There was, once again, the prospect of “Fire In The Valley.”"
}
@article{HB19941,
title = "Developments in single wafer multiprocessing",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "1 - 8",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90153-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901538",
author = "H.B. and Harrison",
abstract = "Technological developments in rapid thermal processing (RTP) are reviewed and placed in context with regard to single wafer processing. The concept of multiprocess including RTP as a cluster tool is introduced, and the role of such tools in future technology is briefly considered."
}
@article{Dimitrijev19949,
title = "New silicon device structures: a quantum leap in microelectronics development",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "9 - 16",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90154-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901546",
author = "Sima Dimitrijev and H. Barry Harrison",
abstract = "This paper considers microelectronics development in view of the diminishing effects of investment in down-scaling of dimensions of microelectronic devices. The paper argues that the most effective direction of the microelectronics evolution is one that goes through the field of novel silicon device structures. While more radical approaches may seem attractive, they are unlikely to be successful in competition with the approach of such structures, which make use of the enormous human and economic potential tied to silicon technologies. Research in the field of novel device structures is seen as a bridge towards the era of nanoelectronics."
}
@article{Nayak199417,
title = "Sensitivity and response times of doped tin oxide integrated gas sensors",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "17 - 25",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90155-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901554",
author = "M.S Nayak and R Dwivedi and S.K Srivastava",
abstract = "This paper deals with the sensitivity and responses of fabricated integral gas sensors using thick film technology. Four different sensors were fabricated on a single substrate using tin oxide as the parent material, and dopings were done using ZnO, MoO and CdS. It was observed that N2 ambient is suitable as the background ambient for evaluation of characteristics of sensors. The fabricated sensors have shown varying sensitivity to hydrocarbons such as acetone, carbon tetrachloride, ethyl methyl ketone and xylene."
}
@article{Gangopadhyay199427,
title = "Effect of parasitic resistances on electrical characteristics of an amorphous silicon TFT",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "27 - 32",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90156-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901562",
author = "U. Gangopadhyay and C.K. Sarkar and H. Saha and M.K. Mukherjee and T.K. Bhattacharya and Ratnabali Banerjee",
abstract = "A Thin Film Transistor (TFT) of amorphous silicon with an inverted staggered structure has been fabricated to investigate the effect of parasitic resistances on its electrical characteristics. The effects of parasitic resistances have been analysed with the help of a computer simulation programme."
}
@article{AR199433,
title = "Heat sink analysis for two-terminal cylindrical microwave oscillator devices",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "33 - 40",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90157-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901570",
author = "A.R. and Batchelor",
abstract = "A theoretical analysis to calculate the steady-state temperature distribution within a heat sink configuration, common to two-terminal semiconductor devices used as sources of microwave power, is outlined. The analysis applies to any heat sink configuration provided that it can be modelled as one or more homogenous solid cylinders mounted on a semi-infinite heat sink, where the heat flux incident on both faces of each cylinder is uniform over a given central circular region. Results are presented that show how the maximum temperature rise within the heat sink configuration depends upon the input heat flux and the dimensions of given heat sink materials."
}
@article{Bauza199441,
title = "MOSFET parameter extraction from static, dynamic and transient current measurements",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "41 - 61",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90158-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901589",
author = "D. Bauza and G. Ghibaudo",
abstract = "A review of the principal techniques used for the extraction of MOS transistor parameters from static, dynamic and transient current measurements is proposed. More specifically, the procedure for the extraction of the main MOSFET parameters such as effective dimensions, threshold voltage, mobility, mobility attenuation factor, source-drain series resistance, channel doping etc., from the static transfer characteristics is presented. Methods for the evaluation of fast and slow interface trap and bulk deep level densities, using the subthreshold slope, dynamic transconductance, charge pumping current, low frequency noise and drain current transient are described. The specificity and resolution of each technique are discussed. The peculiarities of very small area MOS transistors, in which the active number of defects becomes close to unity, are also given."
}
@article{Sahafi199463,
title = "The effect of process parameters on dc self-bias voltage in reactive ion etching of GaAs using CH4/H2",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "63 - 68",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90159-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901597",
author = "H.F. Sahafi and A.P. Webb and M.A. Carter and G.F. Goldspink",
abstract = "Reactive ion etching of GaAs was carried out in mixtures of methane and hydrogen to study the behaviour of the dc self-bias voltage. The etch rate was evaluated for different values of the process parameters including changes in the volume concentration of methane in hydrogen, while monitoring the dc self-bias voltage. An explanation for the variation of this voltage is suggested."
}
@article{Bock199469,
title = "ESD and transient protection of microwave semiconductor devices and integrated circuits based on field emitter structures",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "69 - 74",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90160-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901600",
author = "K. Bock and H.L. Hartnagel",
abstract = "On the basis of investigations regarding the electrostatic discharge (ESD) sensitivity of GaAs microwave devices, we found that there is a need for protection circuits to prevent ESD degradation or destruction of microwave semiconductor devices and circuits. Since such protection circuits are not yet available for these frequency ranges, we developed a suitable protection concept. The field emission effect showed the qualities needed, and we developed metal and GaAs field emitters to fabricate very fast switches with the ability to handle very high current densities in order to obtain such protection circuits suitable for operation in the microwave frequency range."
}
@article{MJ199475,
title = "Hot carrier design considerations for MOS devices and circuits: Cheng T. Wang (editor), Van Nostrand Reinhold, New York, 1992, 334 pp., £47.00",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "75 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90161-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901619",
author = "M.J. and Morant"
}
@article{SL199475,
title = "High-power GaAs FET amplifiers: J.L.B. Walker (ed.), Artech House, Norwood, MA, 1993, 369 pp., £59.00",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "75 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90162-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901627",
author = "S.L. and Hurst"
}
@article{BR199476,
title = "Optical computing: an introduction: M.A. Karim and A.A.S. Awwal, John Wiley, New York, 1992, 360 pp. £51.00",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "76 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90163-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901635",
author = "B.R. and Bannister"
}
@article{SL199477,
title = "Semiconductors and electronic devices: A. Bar-Lev, Prentice-Hall, London, 3rd edition, 1993, 469 pp., £19.95 (paperback)]",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "77 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90164-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901643",
author = "S.L. and Hurst"
}
@article{SL199477,
title = "Digital and microprocessor engineering: S.J. Cahill, Ellis Horwood, Chichester, UK, 2nd edition, 1993, 487 pp., £21.95 (paperback)",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "77 - ",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90165-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269294901651",
author = "S.L. and Hurst"
}
@article{SL199477,
title = "Field-programmable gate arrays: S.D. Brown, R.J. Francis, J. Rose and Z.G. Vranesic, Kluwer Academic Publishers, Norwell, MA, 1992, 206 pp., US$78.00, £50.75, Dfl. 165.00",
journal = "Microelectronics Journal",
volume = "25",
number = "1",
pages = "77 - 78",
year = "1994",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(94)90166-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929490166X",
author = "S.L. and Hurst"
}
@article{Roy1993697,
title = "MEJ-LDSD 1993, 1994, 1995",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "697 - 698",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90053-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929390053H",
author = "Roy and Szweda",
abstract = "This concluding issue of Microelectronics Journal for 1993 is rather like one of those three-course dinners so popular at this time of the year. For starters we have a selection of non-refereed technical articles, albeit with a strong LDSD flavour. The main course is our first special section devoted to technical papers on low dimensional structures and devices (LDSD) under the Guest Editorship of Mohamed Henini of the University of Nottingham. To finish up, from the sweet trolley we have a third section containing a quality mix of routine submitted refereed papers."
}
@article{SF1993699,
title = "MBE at Nanyang Technological University",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "699 - 701",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90054-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390054I",
author = "S.F. and Yoon",
abstract = "The Nanyang Technological University (NTU) in Singapore was the former Nanyang Technological Institute which was set up in 1981. The Institute was reconstituted as a full university in July 1991. The objectives of NTU are to develop a research capability which would be competitive internationally and to provide highly trained manpower for the Singapore industry. As part of its course to advanced R&D in both the professional and engineering disciplines, the Microelectronics Centre in the School of Electrical and Electronic Engineering has set up an active research programme in III-V compound materials and devices using MBE. This article reviews some of the research work in III-V compounds currently undertaken and outlines the facilities in the Centre related to these projects."
}
@article{Alan1993703,
title = "New life for GaAs emitters",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "703 - 706",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90055-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929390055J",
author = "Alan and Moore",
abstract = "GaAs/AlGaAs materials technology is now recognized to be a mature one. However, in the optoelectronic area there are still a number of problems associated with its use. Amongst them is the longterm (10,000 hours) reliability of CW driven emitter diodes. If this problem could be solved, a number of markets which require long term operation at the specific wavelenght of GaAs/AlGaAs emitters could be addressed. Also these devices could challenge a market which requires reliable, non,wavelength specific IR emitters since GaAs-based diodes are fundamentally more efficient than the InP-based ones."
}
@article{Kevin1993707,
title = "II–VI compounds & related optoelectronic materials",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "707 - 712",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90056-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929390056K",
author = "Kevin and Prior"
}
@article{tagkey1993713,
title = "Compound semiconductor update",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "713 - 714",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90057-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929390057L",
key = "tagkey1993713"
}
@article{tagkey1993715,
title = "ISSCC94",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "715 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90058-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929390058M",
key = "tagkey1993715"
}
@article{tagkey1993715,
title = "EuroMBE VIII",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "715 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90059-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929390059N",
key = "tagkey1993715"
}
@article{tagkey1993715,
title = "IPRM VI",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "715 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90060-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929390060R",
key = "tagkey1993715"
}
@article{tagkey1993715,
title = "MRS Spring Meeting",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "715 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90061-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390061I",
key = "tagkey1993715"
}
@article{tagkey1993715,
title = "EXMATECH 94",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "715 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90062-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929390062J",
key = "tagkey1993715"
}
@article{tagkey1993715,
title = "ALE-3",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "715 - 716",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90063-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929390063K",
key = "tagkey1993715"
}
@article{tagkey1993716,
title = "ICMOVPE-VII",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "716 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90064-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929390064L",
key = "tagkey1993716"
}
@article{tagkey1993716,
title = "SI 35 MC VIII",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "716 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90065-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929390065M",
key = "tagkey1993716"
}
@article{tagkey1993716,
title = "IIT 94",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "716 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90066-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929390066N",
key = "tagkey1993716"
}
@article{tagkey1993716,
title = "MBE-VIII",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "716 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90067-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929390067O",
key = "tagkey1993716"
}
@article{tagkey1993716,
title = "EQEC 94 / CLEO Europe 94",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "716 - 717",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90068-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929390068P",
key = "tagkey1993716"
}
@article{tagkey1993717,
title = "ESPREC 94",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "717 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90069-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929390069Q",
key = "tagkey1993717"
}
@article{tagkey1993717,
title = "MRS Fall Meeting",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "717 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90070-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929390070U",
key = "tagkey1993717"
}
@article{tagkey1993717,
title = "ICEM 94",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "717 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90071-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929390071L",
key = "tagkey1993717"
}
@article{Mohamed1993720,
title = "The first microelectronics journal special issue on low dimensional structures and devices",
journal = "Microelectronics Journal",
volume = "24",
number = "8",
pages = "720 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90072-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929390072M",
author = "Mohamed and Henini",
abstract = "This issue of the Microelectronics Journal marks the first special issue devoted to low dimensional structures and devices (LDSD). I was pleased to accept the invitation from Microelectronics Journal Managing Editor, Roy Szweda, to become the Guest Editor for the journal's first special issue on this sparkling field. This special issue will also serve as a curtain raiser on the world's first conference dedicated to the topic: The World Congress on Low Dimensional Structures and Devices - LDSD 1995 to be held in Singapore in Spring 1995."
}
@article{Roy1993697,
title = "GaAs found in silicon valley",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "697 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90001-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929390001U",
author = "Roy and Szweda"
}
@article{JoAnn1993698,
title = "USA report: PowerPC looks like a winner",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "698 - 703",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90002-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929390002V",
author = "Jo Ann and McDonald",
abstract = "The primary criteria for selection of any new central processing unit (CPU) is, will it - and an acceptable infrastructure to support it - be readily available for the life of the system into which it is designed? As the battles over CPU dominance intensify, the only one worth betting one's company on seems to be PowerPC."
}
@article{Robert1993704,
title = "A generic library test suite",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "704 - 707",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90003-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929390003W",
author = "Robert and Eisenstadt",
abstract = "The increasing diversity and complexity of library and tools platform offerings in the ASIC arena suggests revisiting library and platform software quality issues. As ASIC design platform become more open, users will increasingly select libraries and design tools from multiple vendors. Each ASIC vendor may individually provide high quality products. However, library functionality in conjunction with intended platform should also be tested to resolve interface and inconsistency problems before users see the product. Not only should new libraries be tested by the introduction of a major new software capability, such as 3-layers metal routing, should also be thoroughly tested and verified. The goal of these testing efforts is to improve the quality of the design environment in order to shorten product development cycles."
}
@article{Getreu1993708,
title = "An introduction to behavioural modelling",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "708 - 716",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90004-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929390004X",
author = "Ian Getreu and Darrell Teegarden",
abstract = "A guide to the different modelling techniques available in present-day simulators is given. The advantages of behavioural modelling through the use of an Analog Hardware Description Language (AHDL) are presented with respect to other modelling techniques."
}
@article{tagkey1993717,
title = "ABB Hafo flexible processes mean cheaper ASICs",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "717 - 718",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90005-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929390005Y",
key = "tagkey1993717",
abstract = "The market for ASIC circuits, both digital and mixed analog/digital, is highly competitive and is, some say, characterized by overcapacity and depressed prices. Thus, in order to help keep costs down, ABB Hafo of Sweden has introduced for flexible processes in the production of ASICs."
}
@article{tagkey1993719,
title = "TI first with family of 3V standard linear devices",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "719 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90006-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929390006Z",
key = "tagkey1993719",
abstract = "The industry's first family of standard linear op amps, comparators and voltage regulators fully characterised and specified for operation in 3V systems, is now available from Texas Instruments."
}
@article{tagkey1993720,
title = "ARM semiconductor welcomes new licensees",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "720 - 721",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90007-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900072",
key = "tagkey1993720",
abstract = "Advanced RISC Machines (ARM) and its semiconductor partners have welcomed the announcement of further licensees of the Apple Newton technology. GEC Plessey Semiconductors, Sharp Corporation and VLSI Technology are all licensed to manufacture the ARM610tm processor which provides the processing power at the core of Apple's Newtontm Personal Digital Assistant (PDA) family."
}
@article{tagkey1993722,
title = "Hughes reviews VLSIC packaging technology program",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "722 - 723",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90008-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900083",
key = "tagkey1993722",
abstract = "A team led by Hughes Microelectronics Division, Newport Beach, CA, USA, has successfully completed a major manufacturing technology program in which materials and processes were developed for high density, high speed multichip modules (MCMs) capable of handling high thermal loads."
}
@article{Julie1993724,
title = "Step aside QFP - here comes OMPAC",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "724 - 727",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90009-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900094",
author = "Julie and Houghten",
abstract = "The challenges surrounding assembly of high pin count quad flat packs (QFP), such as lead coplanarity and skew, has led Motorola to develop an alternative packaging solution to support advanced CMOS gate array products: OMPAC."
}
@article{tagkey1993728,
title = "Du pont's new pyralin speeds up wet etching of polyimides",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "728 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90010-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929390010C",
key = "tagkey1993728",
abstract = "Du Pont has introduced a new chemistry process which considerably speeds up the processing of non-photosensitive polyimide coatings used for semiconductor passivation and stress buffer applications. The process also provides superior, more consistent results, the company claims."
}
@article{SL1993729,
title = "Optical computer architectures: the application of optical concepts to next generation computers: A.D. McAulay, John Wiley, New York, 1991, 530 pp., £55.00",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "729 - 730",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90011-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900113",
author = "S.L. and Hurst"
}
@article{SL1993730,
title = "Handbook of measurement science, volume 3: Elements of change: P.H. Sydenham and R. Thorn (editors), John Wiley, Chichester, UK, 1992, 600 pp., £80.00",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "730 - 731",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90012-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900124",
author = "S.L. and Hurst"
}
@article{D1993731,
title = "Optoelectronics and lightwave technology: J.E. Midwinter and Y.L. Guo, Wiley, Chichester, UK, 1992, 300 pp, £39.95",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "731 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90013-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900135",
author = "D. and Chapman"
}
@article{M1993731,
title = "Testability of electronic circuits: M. Weyerer and G. Goldemund, Prentice Hall, UK, 1992, 232 pp., £26.95",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "731 - 732",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90014-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900146",
author = "M. and Harris"
}
@article{MS1993732,
title = "Principles of modern optical systems, volume 2: D. Uttamchandani and I. Audonovic (editors), Artech House, Norwood, MA, 1992, 320 pp., £56.00",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "732 - 733",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90015-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900157",
author = "M.S. and Harris"
}
@article{D1993733,
title = "Amorphous and microcrystalline semiconductor devices: Optoelectronic devices: J. Kanicki (editor), Artech House, Norwood, MA, 1991, 458 pp., £74.00",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "733 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90016-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900168",
author = "D. and Gorham"
}
@article{MS1993733,
title = "Practical reliability engineering: P.D.T. O'Connor, John Wiley, Chichester, UK, third edition, 1991, 408 pp., £16.95 paperback, £39.95 hardback",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "733 - 734",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90017-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900179",
author = "M.S. and Harris"
}
@article{Picton1993734,
title = "Fundamentals of photonics: B.E.A. Saleh and M.C. Teich, Wiley-Interscience Publication, John Wiley & Sons Inc., 1991, 966 pp., £56.00",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "734 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90018-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929390018A",
author = "P.D. Picton and D.A. Chapman"
}
@article{Selçuk1993737,
title = "Switched-capacitor filter design using the composite discrete integrator",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "737 - 746",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90019-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929390019B",
author = "Selçuk and Şen",
abstract = "This paper describes the design of switched-capacitor (SC) filters by the use of a discrete integrator called the composite discrete integrator (CDI). Despite the fact that the CDI is more complicated than well-known integrators such as the bilinear discrete integrator (BDI) and the lossless discrete integrator (LDI), it offers high frequency advantages by minimizing discrete integrator errors. Cascade, inverse-follow-the-leader-feedback (IFLF), and ladder filter design techniques are presented. Simulation results of the filter examples are also given."
}
@article{Papaioannou1993747,
title = "Simulation of crosstalk in high-speed multilayer off-chip interconnections",
journal = "Microelectronics Journal",
volume = "24",
number = "7",
pages = "747 - 757",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90020-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929390020F",
author = "D.A. Papaioannou and K.Z. Dimopoulos and J.N. Avaritsiotis",
abstract = "Results of simulation of the electrical performance at 1 Gbit/s of a number of different off-chip interconnection architectures are presented, with emphasis given to the dependence of crosstalk on the geometries and dielectric constants of the insulating layers, as well as on the widths and separations of the conductors. The results indicate that crosstalk may be reduced not only by using low ϵr values for the dielectrics, but also by reducing the conductor-to-wire ground separation which simultaneously neutralizes the role of the ϵr value on crosstalk and line impedance."
}
@article{Keith1993595,
title = "The real need for MCMs",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "595 - 596",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90177-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929390177G",
author = "Keith and Gurnett"
}
@article{JoAnn1993597,
title = "Intel's hot new pentium",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "597 - 600",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90178-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929390178H",
author = "Jo Ann and McDonald"
}
@article{tagkey1993601,
title = "ASICs worldwide: System designers vote on future ASICs",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "601 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90179-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390179I",
key = "tagkey1993601"
}
@article{Allen1993602,
title = "Current applications of knowledge based system technologies for the soldering of printed board assemblies",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "602 - 607",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90180-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929390180M",
author = "W.J.J. Allen and E.P. Curran and J.J.T. Stewart",
abstract = "Today's designs of printed board assemblies (PBAs) place high demands on the production processes and the process engineers. Computer systems that retain process information from a number of varied sources, including human knowledge, can provide a means of improving the performance of specific manufacturing processes."
}
@article{Phil1993608,
title = "GMMT formally opens new 3-inch GaAs MMIC line",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "608 - 613",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90181-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929390181D",
author = "Phil and Yates"
}
@article{Marten1993614,
title = "Patent survey on semiconductors and integrated circuits",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "614 - 617",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90182-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929390182E",
author = "Marten and Terpstra"
}
@article{tagkey1993618,
title = "Fourthcomming events",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "618 - 622",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90183-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929390183F",
key = "tagkey1993618"
}
@article{SJ1993623,
title = "High performance BiCMOS technology and its applications to VLSI: I. Masuda and H. Maejima, Gordon and Breach Publishers, New York, 1990, 85 pp., $34.00/£19.00",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "623 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90184-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929390184G",
author = "S.J. and Harrold"
}
@article{MJ1993623,
title = "Hot carrier design considerations for MOS devices and circuits: Cheng T. Wang (editor), Van Nostrand Reinhold, New York, 1992, 334 pp., £47.00",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "623 - 624",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90185-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929390185H",
author = "M.J. and Morant"
}
@article{JD1993624,
title = "Internetworking LANs: Operation, design and management: R.P. Davidson and N.J. Muller, Artech House, Norwood, MA, 1992, 549 pp., £59.00",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "624 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90186-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390186I",
author = "J.D. and Martin"
}
@article{Tsukahara1993625,
title = "Automated visual inspection system for bonded IC wires",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "625 - 633",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90187-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929390187J",
author = "Hiroyuki Tsukahara and Masato Nakashima and Takehisa Sugawara",
abstract = "This paper discusses an automated visual inspection system for bonded IC wires. The system uses high-contrast image capture, an algorithm for accurately measuring the bonding balls, and a wire inspection algorithm. The high contrast image capture system consists of a wide-area camera and two types of lighting optics, one for ball sensing and the other for wire sensing. The algorithm for measuring the bonding balls is based on morphological techniques, and the wire inspection algorithm is based on a border following algorithm. The automated inspection system measures ball diameters to with in ± μm accuracy, which corresponds to half a pixel of the captured picture. The system takes 0·2 s to inspect a wire and ball. Combining the inspection system with an automatic wire bonder enables a fully automatic bonding system to be constructed."
}
@article{Wilson1993635,
title = "A CMOS floating resistor",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "635 - 638",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90188-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929390188K",
author = "G. Wilson and P.K. Chan",
abstract = "A CMOS floating resistor based on the Banu-Tsividis structure is presented. The proposed modification utilizes the VanPeteghem-Rice level shifting buffer to reduce the dependence on threshold parameters. Spice simulations show that in comparison with the VanPeteghen-Rice floating resistor the proposed configuration exhibits significant improvement in linearity."
}
@article{N1993639,
title = "Microelectronic Halltrons with high resistivity channel as effective semiconductor magnetosensitive structures",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "639 - 646",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90189-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929390189L",
author = "N. and Velchev",
abstract = "Microelectronic magnetosensitive structures with a high resistivity conductive channel are studied. Their technological cycle is fully compatible with the common planar technology for MOS integrated circuits and they have high magnetic sensitivity and linear characteristics. The results could be used in the technology of discrete and integral semiconductor sensors for magnetic fields as well as in the technique of magnetic recording."
}
@article{Haddara1993647,
title = "Measurement and modeling of drain current DLTS in enhancement SOI MOSFETs",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "647 - 657",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90190-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929390190P",
author = "H. Haddara and M.T. Elewa and S. Cristoloveanu",
abstract = "A new approach for current deep-level transient spectroscopy (DLTS) in enhancement-mode MOSFETs is presented. The novelty of this approach is three-fold: (1) it improves the modeling of the transient drain current by directly calculating the transient variation of the inversion charge instead of that of the threshold voltage; (2) it accounts for the mobility field dependence and series resistance effects through a new current dependent mobility law; and (3) it applies a combination of two already existing DLTS measurement procedures in order to avoid any temperature scanning.
Measurements were carried out on n-channel enhancement mode MOSFETs fabricated on bulk Si as well as on SIMOX substrates. Deep-level traps were identified in SIMOX devices and the trap parameters (density, time-constant and trap level) were determined using the proposed method."
}
@article{Masami1993659,
title = "Current-mode lowpass, bandpass and highpass filters using an FTFN",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "659 - 662",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90191-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929390191G",
author = "Masami and Higashimura",
abstract = "A novel circuit configuration for realizing second-order lowpass, bandpass and highpass filters in current-mode is presented. The circuit uses a four-terminal floating nullor (FTFN) and four passive elements, and realizes simultaneously two transfer functions (lowpass/bandpass or highpass/bandpass). It is also shown that an FTFN is a more flexible and versatile building block than a current conveyor (CCII)."
}
@article{Harvey1993663,
title = "A review of testing methods for mixed-signal ICs",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "663 - 674",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90192-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929390192H",
author = "R.J.A. Harvey and A.H. Bratt and A.P. Dorey",
abstract = "Recent developments in Application Specific Integrated Circuits (ASICs), which contain analogue as well as digital components on-chip, has meant an upsurge of interest in the problems of testing. Much successful research has already been carried out in fault-testing digital ICs, but although several methods of analogue testing are being tried, no one coherent philosophy has yet been agreed upon. This paper contrasts and reports on currently favoured analogue testing methodologies, and includes a discussion, with reference to recent work undertaken by the authors, of the applicability of the power supply current monitoring technique."
}
@article{Manic1993675,
title = "Preparation of stoichiometric BiSrCaCuO superconducting thin films by RF diode sputtering",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "675 - 687",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90193-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390193I",
author = "I. Manic and S. Horita and T. Hata",
abstract = "The chemical composition of sputter-Deposited BiSrCaCuO thin films was investigated as a function of system geometry and some controllable parameters. Films prepared using conventional configuration were bismuth deficient owing to the selective resputtering by energetic oxygen particles released at the target surface. Exploiting an unusual configuration, which included both an off-axial substrate position and a grounded plate in front of the target, the film stoichiometry reproduced that of the target. The fundamental properties of prepared films are also considered in the paper. In particular, the crystal structure and the superconductivity of in-situ grown stoichiometric films are discussed."
}
@article{Czarczyńska1993689,
title = "Fabrication and electrical properties of carbon/ polyesterimide thick resistive films",
journal = "Microelectronics Journal",
volume = "24",
number = "6",
pages = "689 - 696",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90194-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929390194J",
author = "H. Czarczyńska and A. Dziedzic and B.W. Licznerski and M. Łukaszewicz and A. Seweryn",
abstract = "The preparation, morphology and basic electrical properties of carbon/polyesterimide (PEI) thick film resistors are presented. SEM observations have been used for microstructure investigation. The influence of carbon (conductive carbon black (CB) or graphite (G)) and the effect of an inorganic filler (TiO2) on sheet resistance, normalized temperature dependence of resistance, durability to thermal shocks and moisture behaviour of two- and three-component systems are discussed."
}
@article{StanleyL1993461,
title = "Canadian microelectronics",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "461 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90114-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929390114T",
author = "Stanley L. and Hurst"
}
@article{Callahan1993463,
title = "Organizational learning across critical linkages: The case of captive ASIC design and man manufacturing",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "463 - 476",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90115-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929390115U",
author = "John Callahan and Peter Diedrich",
abstract = "Many large electronic systems manufacturers have captive internal ASIC design and manufacturing capability. The ASIC environment is driven by continuous and significant advances in basic design and manufacturing technology, CAD tools, and design complexity. This paper introduces a framework for managers charged with deriving competitive advantage in this environment. The framework is made up of four parts: strategic intent, guideposts; organizational structure; and coordination arrangements. The critical issues of organizational learning and internal and external linkages between task groups are described and highlighted. Application of the framework is illustrated with the experiences of an electronic-systems manufacturer."
}
@article{Shum1993477,
title = "An empirical timing characterization method and its application to CMOS logic circuits",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "477 - 484",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90116-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929390116V",
author = "Roger S. Shum and Martin C. Lefebvre",
abstract = "This paper presents a flexible framework for macromodelling the timing behavior of CMOS logic gates. Data obtained from extensive circuit simulations are used to automatically generate direct mathematical expressions for the delay of CMOS logic gates as a function of selected circuit parameters. The accuracy of the model is within a few percent of SPICE simulation results. Hence, the model can be used to timing verification as well as optimization of VLSI circuits."
}
@article{NabaviLishi1993485,
title = "Delay and current estimation in CMOS gates using collapsing",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "485 - 495",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90117-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929390117W",
author = "A. Nabavi-Lishi and N.C. Rumin",
abstract = "We previously introduced an analytical model to compute the delay and the maximum supply current in CMOS inverters [1–3]. In this paper we extend our modelling to include static CMOS logic gates, using a collapsing technique which reduces the gate to an equivalent inverter. The technique deals not only with the input signal transition times and relative delays, but also with the position of the input in the case of series-connected MOSFETs. Although the reduction process is simple, it does not result in a significant accuracy penalty. The speed for calculating the delay and the maximum supply current in CMOS combinational circuits approaches four orders of magnitude better compared to HSPICE [4] simulation, while the improvement for computing the current waveform approaches three orders."
}
@article{OlafS1993497,
title = "A high-level VLSI design for ultra-dense instruction set computer architectures",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "497 - 503",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90118-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929390118X",
author = "Olaf S. and Schoepke",
abstract = "At present, typical von Neumann architectures lose more and more of their performance to the memory system. The main reason for this behaviour is the slow main memory. Even if caches alleviate this problem, an advanced architecture has to be developed to provide instructions to the execution unit very much faster than current architectures are able to. This paper describes an advanced system architecture based on ultra-dense instruction sets to overcome the increasing gap between processor and memory speed. Entropy measurements show great redundancy in RISC instruction streams, and therefore a coding technique which can get as close as desired to the entropy is required to encode and decode the instruction stream. Encoding has to be done on static code, the code prior to execution, and decoding on dynamic code, the code during execution. A high-level VLSI design to build the system is suggested."
}
@article{Dewan1993505,
title = "Performance analysis and design of optimized static random access memory (SRAM)",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "505 - 512",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90119-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929390119Y",
author = "Jahangir Dewan and Baher S. Haroun and Asim J. Al-khalili",
abstract = "Achieving specific access time requirements while maintaining low area and power are important design goals for high-performance embedded Static RAMs. In this paper, we present a new design for the pre-charge circuit of an SRAM called ‘Power-Down Y-Controlled PMOS (PDYCP) load pre-charge’, which reduces power dissipation by a factor of three in comparison with the YCL [1] pre-charge technique. An optimization tool is described that obtains the transistor sizes for this pre-charge circuit and word drivers, as well as for the sense amplifiers. The design methodology for the SRAm is presented together with the modeling approach used in the optimization tool, which guarantees timing accuracy across a wide range of RAM array sizes."
}
@article{Wilson1993513,
title = "Global optimization of multipleiers and buses in interconnect synthesis",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "513 - 532",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90120-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901204",
author = "T.C. Wilson and B. Halley and D.K. Banerji and M.K. Garg and R. Deadman",
abstract = "In this paper, we consider the problem of optimizing interconnection complexity in behavioral level synthesis of digital systems. We assume that, as a result of other steps in synthesis, logical connection requirements have already been determined, with a corresponding level of multiplexing implied. We further reduce the total amount of multiplexing by combining logical connections into shared (physical) connections wherever possible. Our measure of interconnection complexity is the number of equivalent 2×1 multiplexers. Using this criterion, we can guarantee an optimal solution to this problem. The problem is modelled with a graph, which is then pruned extensively before being used as an input to any one of the two alternative solution techniques. The primary (and optimum) technique employs integer linear programming. We also provide a faster heuristic solution that yields near-optimal results. Since the actual implementation of shared connections may vary widely, we also show how the linear program can be modified to optimize and count the total number of n×1 multiplexers (n⩾2) or the total number of tri-state buffers in a bus-based interconnect implementation."
}
@article{Kontopidi1993533,
title = "The partitioning of linear registers for testing applications",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "533 - 546",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90121-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929390121T",
author = "E. Kontopidi and J.C. Muzio",
abstract = "Linear Feedback Shift Registers (LFSRs) and Linear Cellular Automata Registers (LCARs) are linear finite state machines which are used in built-in self test as test pattern generators and signature analysers. This paper considers the problem of partitioning maximal length machines into a number of smaller maximal length submachines. Such a property allows more flexibility to the system designer with resulting economy in testing hardware. The study presented shows that LCARs have better partitioning behavior than LFSRs, but only a small percentage of all the primitive machines of both types can be partitioned into primitive bit-slices. It is proposed that LFSRs and LCARs can exhibit better partitioning performance if minimum modifications to the registers are allowed. The extra hardware required for partitioning and modifications is estimated using the OASIS Design System and the Magic Layout Editor."
}
@article{Ward1993547,
title = "CMOS photodetector with built-in light adaptation mechanism",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "547 - 553",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90122-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929390122U",
author = "Vivian Ward and Marek Syrzycki and Glenn Chapman",
abstract = "This paper reports research results on a new class of silicon hotodetectors with built-in light adaptation mechanisms. Previously used devices feature a limited dynamic range which is much smaller than a range of light intensity present in our environment. Intelligent vision systems functioning similarly to human vision systems require new photodetectors with abilities not only to cover wider dynamic range, but also able to accomplish background adaptation and dark adaptation mechanisms similar to those existing in human retina. The proposed class of devices uses the same silicon structure operating in two or more operating modes of different sensitivity, with light-controllable switching between different modes. The measurements conducted on CMOS photodetectors fabricated in the 3 μm CMOS technology show that the new photodetectors have a dynamic range increased by at least two orders of magnitude and feature limited power consumption, which is especially attractive for large area transducer systems."
}
@article{Shoval1993555,
title = "A wide-range tunable BiCMOS transconductor",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "555 - 564",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90123-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929390123V",
author = "Ayal Shoval and David A. Johns and W.Martin Snelgrove",
abstract = "This paper describes a fully differential BiCMOS operational transconductance amplifier (OTA) with a transconductance parameter Gm that is tunable over 1 decade. Another significant feature of this OTA is that the tuning scheme is based on current steering resulting in the maximum input signal level being independent of tuning and a reduction in bias dependencies. The circuit is suitable for implementing adaptive analog OTA-C filters for high-frequency data communication applications where moderate SNR is acceptable."
}
@article{Chalifoux1993565,
title = "VLSI design of an M-path decoder IC suitable for bidirectional decoding of convolutional codes",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "565 - 576",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90124-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929390124W",
author = "M. Chalifoux and M. Nguyen and Y. Savaria and J. Belzile and D. Haccoun",
abstract = "Forward Error Correction (FEC) with convolutional codes is an efficient way of improving the reliability of communication systems. A good compromise between decoding performance and complexity is offered by the M-path algorithm. We designed on a single VLSI ASIC a complete unidirectional M-path decoder suitable for bidirectional M-path decoding, which is currently fabricated by NTE via the CMC. This chip contains approximately 130 000 transistors and it has 123 I/O pads on an 86 mm2 silicon area. The architecture is based on a bit serial communication of data which allows a very high clock rate. A 100 MHz operation is expected. The main engine of the decoder is a matrix of 64 extenders. Another important part of the IC is its partial selection network for which we used a novel topology. To achieve the expected 100 MHz clock rate, clock signals are distributed on H-trees and control signals are distributed on buses that are retimed at the leaves of the H-trees, thus avoiding the problem of balancing a large number of signals with different capacitive loads."
}
@article{tagkey1993577,
title = "The Canadian microelectronics corporation, Queen's University, Kingston, Ontario, Canada, K7L 3N6",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "577 - 579",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90125-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929390125X",
key = "tagkey1993577"
}
@article{tagkey1993580,
title = "The microelectronics and computer systems laboratory, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 2A7",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "580 - 584",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90126-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929390126Y",
key = "tagkey1993580"
}
@article{tagkey1993584,
title = "Update",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "584 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90127-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929390127Z",
key = "tagkey1993584"
}
@article{GW1993585,
title = "Fine pitch surface mount technology —quality, design and manufacturing techniques: P.P. Marcoux, Van Nostrand Reinhold, New York, 1992, 340 pp., £41.50",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "585 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90128-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901282",
author = "G.W. and Griffiths"
}
@article{DA1993585,
title = "Semiconductor memories: a handbook of design, manufacture and application: B. Prince, John Wiley, Chichester, UK, 1991, 802 pp., £65.00",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "585 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90129-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901293",
author = "D.A. and Gorham"
}
@article{RG1993586,
title = "Design of logic systems: Douglas Lewin and David Protheroe, Chapman and Hall, London, second edition, 1992, 702 pp., £19.95",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "586 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90130-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901307",
author = "R.G. and Bennetts"
}
@article{FVP1993586,
title = "An introduction to power electronics: B.M. Bird, K.G. King (deceased) and D.A.G. Pedeer, John Wiley, Chichester, UK, second edition, 1993, 374 pp., £39.95/$79.95 hardback, £14.95/$29.95 paperback",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "586 - 587",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90131-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929390131W",
author = "F.V.P. and Robinson"
}
@article{SL1993587,
title = "Design automation for timing-driven layout synthesis: S.S. Sapatnekar and S.-M. Kang, Kluwer Academic Publishers, Norwell, MA, 1993, 269 pp., $75.00/£44.75/Dfl. 145.00",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "587 - ",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90132-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929390132X",
author = "S.L. and Hurst"
}
@article{SL1993587,
title = "Reliability of gallium arsenide MMICs: A. Christou (editor), John Wiley, Chichester, UK, 1992, 457 pp., £55.00",
journal = "Microelectronics Journal",
volume = "24",
number = "5",
pages = "587 - 588",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90133-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929390133Y",
author = "S.L. and Hurst"
}
@article{tagkey1993291,
title = "The 4th ESPRIT workshop on the characterisation and growth of thin dielectrics in microelectronics",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "291 - 292",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90029-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929390029E",
key = "tagkey1993291",
abstract = "The 4th ESPRIT Workshop on the characterisation and Growth of Thin Dielectrics in Microelectronics was held in Blarney, Co. Cork, Ireland, on 20th and 21st October 1992. The workshop is organized by the Irish National Microelectronics Research Centre (NMRC) on behalf of the consortium involved in ESPRIT project 2039, “Advanced PROM Building Blocks (APBB)”."
}
@article{JoAnn1993293,
title = "Neurocomputers solving basic boundary problems",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "293 - 297",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90030-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390030I",
author = "Jo Ann and McDonald",
abstract = "One of the most exciting enabling technologies to come the way of computer science in the last decade has been the emergence of artificial neural network (NN) based systems. Exciting, because what they now enable us to do, is link computers more closely with the real world — not just in claims of so-called “real time processing,” but in fact — for NNs actually “learn” to do a given task through trial and error, similarly to the manner in which we humans, like other animals, instinctively learn any skill. The more we evolve into an electronically interlinked world, the more we will require tools such as neurocomputers that can emulate the speed and delightful imprecision of human deliberations and decisions."
}
@article{Marten1993298,
title = "Patent survey on semiconductors and integrated circuits",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "298 - 301",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90031-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900319",
author = "Marten and Terpstra"
}
@article{tagkey1993302,
title = "EpicTM—An advanced dielectric solution meeting advanced dielectric film challenges",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "302 - 307",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90032-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929390032A",
key = "tagkey1993302",
abstract = "Dielectric films, which serve as essential insulating layers in all ICs, represent the most intensive chemical vapor deposition (CVD) film set in the fabrication cycle. As a result, dielectrics currently comprise more than 75% of the overall CVD market — creating an approximate $500M market that is projected to reach $910M by 1997. Within this dynamic market, interlevel and intermetal dielectrics are the two fastest growing sectors."
}
@article{Gunther1993308,
title = "19th International symposium on GaAs and related compounds, Karuizawa, Japan, Sept. 28 – Oct. 2, 1992",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "308 - 312",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90033-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929390033B",
author = "Gunther and Weimann",
abstract = "The 19th International Symposium on GaAs and Related Compounds was held in Japan, again in the pleasant highland resort of Karuizawa. The conference was well attended, participation being strongly dominated by Japan, possibly due to the worldwide lack of travel funds, but also due to the Japanese dominance in the field of III–Vs. 259 attendees of a total of 329 came from Japan, 28 from the USA and 30 from Europe. 95 oral and 54 poster contribtions were selected by the program committee from approximately 200 submissions. Seven invited talks and 20 late news papers completed the program."
}
@article{Parks1993313,
title = "The evolving role of defects and contamination in semiconductor manufacturing",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "313 - 327",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90034-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929390034C",
author = "Harold G. Parks and John F. O'Hanlon",
abstract = "Within the framework of global definitions the role of defects and contamination in future submicron semiconductor manufacturing are investigated. A defect is defined as anything that causes a non-ideal result, and contamination is defined as anything that results in a defect. Contamination can be categorized as heterogeneous, homogeneous, behaviour altering, and non-uniformities. It is found that control of contamination and reduction of defects, central to high yield manufacturing of state-of-the-art technologies, will become even more important in the future due to the strong interdependencies of defects and contamination with all phases of processing, devices and technology, and IC manufacturability. This is cast in a quantitative light by using a simple yield model to examine the defect density requirements for volume production status of 1 Gb memory chips near the turn of the century. In view of increasing material and processing complexities this leads to the conclusion that the timing of defect reductions for future technology generations is the single most important potential show stopper or technology limiter. The mandate this provides to the semiconductor industry is that defects and yield loss mechanisms must be considered an integral part of the process development, and in some cases part of the research phase. This can only be done if a coordinated effort focused on achieving defect-free manufacturing is established."
}
@article{tagkey1993328,
title = "Motorola rugged accelerometer",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "328 - 460",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90035-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929390035D",
key = "tagkey1993328"
}
@article{Wolters1993333,
title = "Thermal oxidation of silicon and residual fixed charge",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "333 - 346",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90036-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929390036E",
author = "D.R. Wolters and A.T.A.Zegers-van Duijnhoven",
abstract = "Thermal oxidation of silicon is described in terms of the ionic transport of oxygen species. The growth depends on the diffusion of oxygen ions which create a counter-field in the oxide. A mechanism of field disproportionation causes high counter-fields close to the Si interface, which in turn causes retardation of growth. The space charge related to these counter-fields is identical to the experimentally observed fixed oxide charge Qf. The ionic growth models Qf quantitatively, and also models the observed temperature, oxygen pressure and thickness dependence of Qf. The model derives a power-parabolic growth law which fits the growth curves with excellent accuracy. A compilation of curves and data from the literature is presented. In a simple way, the model explains the 2D effects observed, such as the reduced growth rate at corners, trenches, and in windows close to the field oxide, and the encroachment of the field oxide in LOCOS processing. A pretreatment of the wafer in either a basic or an acid environment affects the thick oxide growth rate, as is observed experimentally. The presence of ionic SiO− groups generated in the basic pretreatment readily explains why this effect is only observed for thick oxides."
}
@article{B1993347,
title = "In situ investigation of amorphous silicon/silicon nitride interfaces combining UV-visible and infrared ellipsometry",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "347 - 352",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90037-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929390037F",
author = "B. and Drevillon",
abstract = "An in situ ellipsometry study of interfaces between plasma deposited amorphous silicon (a-Si:H) and silicon nitride (a-SiNx) is presented. In order to achieve a more detailed description of the formation of interfaces, measurements obtained from UV-visible and infrared (IR) spectroellipsometry are combined. The structure of the interfaces is found to be affected by the deposition sequence. A behaviour compatible with a sharp interface is observed when a-SiNx is deposited on top of a-Si:H. In contrast a graded transition is observed when a-SiNx is deposited first. In the latter case, the IR measurements directly reveal a nitrogen tail incorporated in the first monolayers of a-Si:H (10–20 Å thick). The formation mechanisms of the interfaces are discussed."
}
@article{Monsérié1993353,
title = "Temperature, field and technological dependences of thin oxide breakdown characteristics",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "353 - 360",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90038-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929390038G",
author = "C. Monsérié and P. Mortini and G. Pananakakis and G. Ghibaudo",
abstract = "The influence of the temperature, the applied field, and the process on the breakdown parameters of very thin oxides used in representative CMOS technologies is studied. Particularly, three temperature ranges with different activation energies are demonstrated, although the correlation between the bulk oxide trapped charge and the breakdown vs temperature is shown. The two main well-known quantitative models for breakdown are applied and discussed. The great importance of the oxidation step is shown, but the influence of the substrate is also proved. A law describing the evolution of the field acceleration factor vs oxide thickness at high fields is given. Throughout this study, some limitations for the estimation of the oxide reliability are reported."
}
@article{Mir1993361,
title = "Models for the SiSiO2 interface degradation at low injected electron fluences",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "361 - 369",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90039-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929390039H",
author = "A. Mir and D. Vuillaume",
abstract = "Positive charge and interface state creation at the SiSiO2 interface has been studied when low-fluence electron injections (lower than 10−3 C/cm2) are performed at high fields (higher than 7 MV/cm) across the oxide. Temperature dependencies for the formation of both types of interface defects are examined in the range of 90–450 K. For the injections at a field lower than a threshold field of about 8·5–9 MV/cm, the interface state generation dominates, and we do not observe a significant positive charge formation. At a higher field, both positive charges and interface states are generated. It is found that positive charge formation is temperature independent, while interface state creation is thermally activated. The former result (no temperature dependence) is consistent with impact ionization in SiO2, while the latter (temperature dependence) is explained by a trap creation due to hydrogen-related species diffusion. These results show that both mechanisms can occur together, and that they trigger two different kinds of damage at the SiSiO2 interface."
}
@article{Proust1993371,
title = "Silicon oxide deposited by direct photolysis of N2O and SiH4 at 185 nm on sulfur-treated InP: application to InP MISFETs",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "371 - 376",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90040-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929390040L",
author = "N Proust and M Petitjean and C Arnodo and M Beguet and J.F Chapeaublanc and J Perrin",
abstract = "We report on silicon oxide deposited by direct photolysis at 185 nm of an N2OSiH4 mixture. Films are deposited at 250°C under a 665 Pa pressure on indium phosphide (InP). To determine the best insulator in terms of physico-chemical and electrical properties, the ratio R = SiH4N2O has been varied. A quasi-stoichiometric silicon oxide is obtained for R = 2% (O/Si = 1·87 instead of 2), the hydrogen and the nitrogen contents being, respectively, ≈15% and ≈5%. Electrical characterization has been done on Metal Insulator Semiconductor (MIS) diodes. After dipping InP in an (NH4)2SX solution, and after an appropriate annealing procedure, the density of states Nss is of the order of 1011 eV−1 cm−2. A quite good resistivity of 1015 ohm.cm is observed. Simple depletion mode Field Effect Transistors (MISFETs) are then made, and present a transconductance gm of 63 mS/mm and an Fmax of 20 GHz."
}
@article{Charpenel1993377,
title = "Electrical characterization of oxide in MOS devices using low energy electron beam filling of traps",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "377 - 380",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90041-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929390041C",
author = "P. Charpenel and P. Girard and F.M. Roche",
abstract = "This paper presents recently obtained results on one- and two-metal-level MOS transistors under low energy electron beam irradiation. Various electrical methods are used to analyse the evolution of electrical characteristics. It is shown that a separation and a quantization of the effects of interface and gate oxide trap densities can be achieved. We show that the Scanning Electron Microscope (SEM) may be a suitable tool to characterize gate oxide, even in modern technologies."
}
@article{Brożek1993381,
title = "Wear-out properties of irradiated oxides in MOS structures",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "381 - 387",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90042-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929390042D",
author = "T. Brożek and A. Jakubowski and B. Peśić",
abstract = "The paper presents the results of investigations of wear-out properties of γ-irradiated oxides in MOS structures. It has been found that although irradiation does not influence the breakdown characteristics of the oxide, the transient processes (observed via voltage behaviour) during high-field constant-current stressing can be significantly affected. Post-irradiation annealing, which removes radiation-induced changes, considerably improves long-term reliability when compared to the reference (non-irradiated structure), while it does not change transient behaviour during wear-out. The relation between voltage transients during constant-current high-field stressing, charge characteristics, and long-term reliability is also briefly discussed."
}
@article{Balland1993389,
title = "FT-IR, SIMS and electrical characterization of Si3N4 thin films obtained from CVD, assisted by in situ electrical discharge",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "389 - 393",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90043-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929390043E",
author = "B. Balland and R. Botton and M. Lemiti and J.C. Bureau and A. Glachant",
abstract = "An original process has been developed enabling the fabrication of CVD insulating (Si3N4) thin films by means of an in situ activation of the reactions at T < 400 °C and under P = 1 to 2 torr. Mono-Si substrates were nitrided using a mixture of argon containing SiH4 and NH3. O2 has also been added to the reaction gases. The activation was performed by a DC electrical discharge. The substrate was not used as an electrode, and was placed parallel to the discharge current. This configuration minimized the contamination of the films during their formation. The layers have been analyzed using FT-IR and SIMS spectroscopy. MIS structures have been realized using these nitrided layers. The flat-band shift ΔVFB (about −1 V) and the interface state density Nit has been measured. Good electrical characteristics are obtained with T ⩽ 225 °C."
}
@article{Papadas1993395,
title = "On the endurance performance of FLOTOX EEPROM cells with WSi2 overcoated floating gate electrode",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "395 - 399",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90044-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929390044F",
author = "C. Papadas and G. Ghibaudo and G. Pananakakis and F. Pio and C. Riva and P. Ghezzi",
abstract = "Comparison between endurance performance obtained on FLOTOX EEPROM cells with heavily doped poly-Si as floating gate electrode and heavily doped poly-Si overcoated with WSi2 is presented. The poor endurance performance which has been obtained on the memory cells with silicidated floating gate electrodes has been quantitatively attributed to fluorine contamination of the tunnel oxide layer, introduced during the LPCVD silicide deposition process step. Finally, the necessity for optimizing the post-silicidation annealing procedure is proposed."
}
@article{Gonon1993401,
title = "Optical and electrical characterization of ultra-thin oxides grown by rapid thermal processing in O2 or N2O",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "401 - 407",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90045-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929390045G",
author = "N. Gonon and J. Ciavatti and C. Plossu and B. Balland and D. Barbier and A. Gagnaire",
abstract = "Rapid Thermal Processing (RTP) is a promising technique to obtain high quality ultra-thin dielectric films with low fixed charge density, high breakdown dielectric field and good Si/SiO2 interface quality. In this paper, we compare the growth of thin rapid thermal oxide film in pure O2 and N2O ambient. The role of the pre-oxidation cleaning procedure (chemical cleaning or in situ rapid thermal cleaning) is studied. The film thickness and refractive index were measured by spectroellipsometry. It is found that the growth rate in N2O is much lower than in pure O2, and that the apparent refractive index increases when the thickness falls below 15 nm whatever the oxidation temperature and the gas process. Classical electrical characterization of as-grown oxides was performed on MOS capacitors using a mercury probe. Fixed oxide charge, interface state density and leakage current are studied as a function of the oxidation ambient and pre-oxidation cleaning procedure."
}
@article{Weidner1993409,
title = "Temperature variation of nitrogen content by N2O-rapid thermal processing of silicon and of silicon oxide on silicon",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "409 - 413",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90046-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929390046H",
author = "G. Weidner and D. Krüger",
abstract = "The N2O-Rapid Thermal Processing (RTP) of silicon and silicon oxide on silicon with temperatures from 800–1200°C at 60 s and 180 s results in nitrogen incorporation at the interface with up to 4% nitrogen in an interlayer of less than 2·5 nm thickness not influenced by the oxide thickness. The incorporation mechanism is different below about 1000°C; the direct N2O-RTP of silicon leads to an apparent activation energy of 0·6 eV, and the N2O-RTP of oxide leads to 2·4 eV. Nitrogen should be incorporated by dissociation of N2O at the interface favouring the SiO binding. Thus, the nitrogen should preferentially occupy and compensate defective sites of the SiOx transient layer."
}
@article{Bauer1993415,
title = "Electrical characteristics of thin reoxidized dual-layer oxides",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "415 - 420",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90047-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929390047I",
author = "A.J. Bauer and W.R. Aderhold and E.P. Burte",
abstract = "The electrical properties of thin dual-layer silicon oxide films have been studied. These stacked oxide films consist of reoxidized low pressure thermal oxide, and at low pressure, chemically vapor-deposited high temperature oxide prepared by an intra-chamber process without breaking the vacuum. Analysis of these dual-layer oxides reveals lower defect densities as well as higher breakdown field strengths and better charge-to-breakdown characteristics than conventionally produced dual-layer or thermal oxides. Interface quality and stability cannot be improved by stacking silicon oxide films."
}
@article{Rausch1993421,
title = "Thin Ta2O5 films prepared by low pressure metal organic CVD",
journal = "Microelectronics Journal",
volume = "24",
number = "4",
pages = "421 - 426",
year = "1993",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90048-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929390048J",
author = "N. Rausch and E.P. Burte",
abstract = "The preparation and properties of tantalum pentoxide (Ta2O5) thin film have been studied with respect to its application as a capacitor dielectric material in low-power, high-density dynamic random access memories (DRAMs). Ta2O5 films were deposited in a hot wall-type vertical furnace by a low pressure metal organic chemical vapour deposition (LPMOCVD) process at low temperatures (375–500°C) and then annealed in oxygen ambient at temperatures up to 1000°C. This annealing treatment improved significantly the electrical properties of the Ta2O5 film."
}
@article{Keith1993165,
title = "Design evolution: from chipsets to MCMs",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "165 - 166",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90144-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901444",
author = "Keith and Gurnett",
abstract = "In keeping with our theme of ASICs and packaging, this Guest Editorial from Keith Gurnett ponders the evolution of two of industry's current darlings: chipsets and MCMs (multi-chip modules). Are these a clever market ploy to enable the chip sellers to add value? Do they cramp the designer's style instead of conferring more versitility? Most of all, are chip sets just another evolutionary step towards the MCM? Ultimately, will MCMs evolve into ASICs? The questions and the technology options continue to multiply."
}
@article{Marten1993167,
title = "Patent survey on semiconductors and integrated circuits",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "167 - 169",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90145-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901455",
author = "Marten and Terpstra",
abstract = "Recently, there has been an increasing number of patent applications and patents on semiconductors, ICs and their applications to various fields of technology. Most of these documents deal with small steps in improving processes of the production of semiconductor devices and most of them originate from Japan and the USA. In this article some eye-catching new developments in devices and processes will be discussed."
}
@article{JoAnn1993170,
title = "USA Report: An ASIC attitude",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "170 - 174",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90146-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901466",
author = "Jo Ann and McDonald",
abstract = "The high performance integrated circuit (HPIC) industry, as a whole, is leading the way to what could well become the “custom-made” markets many feel are the wave of the future. American manufacturers of HPICs, along with customers and suppliers, are showing signs of dramatically reconfiguring to capitalize on America's traditional strength: innovation."
}
@article{Tony1993175,
title = "Characteristics of device packaging - A one-day colloquium, IEE, London, 23 November 1992",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "175 - 178",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90147-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901477",
author = "Tony and Howard",
abstract = "The electrical, thermal and physical characteristics of semiconductor device packaging have become increasingly significant with the development of ever higher performance and more complex assemblies. This was demonstrated clearly in the tightly packed programme of a one-day colloquium held at the IEE in London. The intention of the meeting was to bring together engineers covering a wide range of activities related to packaging technology and materials and thus stimulate a cross fertilization of ideas and experiences across the boundaries of a variety of applications."
}
@article{NarinderS1993179,
title = "The European market for programmable logic devices",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "179 - 180",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90148-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901488",
author = "Narinder S. and Lall",
abstract = "The PLD (programmable logic device) market in Europe is currently experiencing radical change and is attracting the interest of many major semiconductor suppliers. New entrants to the market for high density PLDs continue to emerge with high performance products destined to offer PLD users greater choice. Some new entrants are small start-up companies who have no manufacturing facilities of their own; others are multinational giants such as Toshiba and Motorola."
}
@article{Culver1993181,
title = "Thin QFP — the next generation high pincount surface mount challenge",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "181 - 189",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90149-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901499",
author = "Robbyn Culver and Richard Groover and Ahmad Hamzehoost and Chin C. Huang",
abstract = "Surface mount technology has revolutionized almost all aspects of end user product development. The commercial market in Japan has used low pin count surface mount packages for many years. Europe and the United States are rapidly expanding their own surface mount manufacturing expertise."
}
@article{VanHoudt1993190,
title = "HIMOS: an attractive flash EEPROM cell for embedded memory applications",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "190 - 194",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90150-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929390150D",
author = "J. Van Houdt and G. Groeseneken and H.E. Maes",
abstract = "Flash EEPROMs (electrically eraseable programmable read-only memory) are the most recent products in the field of non-volatile memories. They were introduced 6 years ago to cope with the low market volumes of the expensive full featured EEPROMs. Many forecasts are stating that flash EEPROM will become in the near future one of the main technology drivers, to be used in both stand-alone memories and in embedded memory applications for ASICs [1]."
}
@article{tagkey1993195,
title = "Motorola MCMs",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "195 - 204",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90151-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901514",
key = "tagkey1993195",
abstract = "Motorola's Application Specific Integrated Circuits Division, Chandler, AZ, USA, has introduced the MCMLTM Series of multichip modules (MCMs). Aimed at cost sensitive, low to medium power applications, the modules use laminate PCB type substrates to achieve the next level of semiconductor integration."
}
@article{Andrew1993205,
title = "The Panther range of test synthesis products",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "205 - 216",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90152-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901525",
author = "Andrew and Boswell",
abstract = "The production of test vectors for ASICs is a costly and often tedious part of the ASIC design cycle. This paper gives an overview of test economics, discusses structured testing techniques, particularly full scan, and introduces the Panther test synthesis product range. These automated eCAD tools provide a seamless flow from netlist to test tape. With Panther, the designer uses a well proven, structured methodology and is supported by new design and flow management techniques: the synthesis of test vectors is reduced to a small component of the design cycle, dramatically reducing the cost of ASICs. The designer has complete control over test synthesis while the software eliminates the tedious and costly aspects of it."
}
@article{Aziz1993217,
title = "A high-speed two's complement multiplier using differential split-level CMOS",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "217 - 223",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90153-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901536",
author = "S.M. Aziz and W.A.J. Waller",
abstract = "The design and test results of an 8 × 8 bit high-speed two's complement multiplier fabricated in a 1·5 μm n-well CMOS process are presented in this paper. The design is based on the well known modified Booth's algorithm which gives high speed at reasonably low area. Most of the cells of the multiplier are implemented in differential split-level (DSL) CMOS logic to obtain a higher multiplication speed than in conventional static CMOS. The higher static power dissipation associated with DSL CMOS can be minimized by switching the reference voltage to VDD during inactive periods while the results of the last multiplication operation remain valid. The multiplier is directly compatible with standard CMOS designs."
}
@article{Wild1993225,
title = "Toward high-level synthesis for ASIC design",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "225 - 228",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90154-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901547",
author = "Andreas Wild and Rainer Makowitz and Franz Steininger and Volker Kiefer",
abstract = "High-level synthesis is a design style that considerably increases design productivity, resulting in correct-by-construction optimized structures. Yet, to be efficient, the top-down design has to be complemented with knowledge about the ‘cost’ of its detailed implementation (timing, size, power dissipation etc.). The efficient use of the synthesis tools at their current stage requires careful (manual) modelling. Also, essential elements of the design are not covered by the high-level descriptions and tools but are taken into account at a late stage of the project, typically in post-processing."
}
@article{Kabbaj1993229,
title = "CBS-CAD: a CAD process management system",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "229 - 252",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90155-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901558",
author = "A. Kabbaj and E. Cerny and M. Dagenais",
abstract = "This paper presents a new VLSI design management system for estimating layout qualities and selecting design methodologies. It achieves this by accumulating and analyzing information from past designs. The system manages the description of the design process itself. Thus, based on design-by-similarity, the system provides the designer with alternative design methodologies and identifies the most promising ones. Experimental results, obtained with a prototype implementation in CLOS and using OCT VLSI design tools from Berkeley, are also described."
}
@article{Pourbeik1993253,
title = "DIGamber: a digital design and diagnostic tool in expert system environment",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "253 - 258",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90156-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269293901569",
author = "P. Pourbeik and L.C. Jain",
abstract = "This paper reports the progress made in the development of a framework for DIGamber — an integrated digital design and diagnostic tool for combinational digital circuits. The present approach generates the diagnostic tests from the design algorithms for the circuit under consideration. To illustrate the concept, the design and built-in-diagnostic tests for a binary adder are presented."
}
@article{Y1993259,
title = "A neural implementation of complex activation functions for digital VLSI neural networks",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "259 - 262",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90157-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929390157A",
author = "Y. and Deville",
abstract = "A method for implementing a wide range of smooth nonlinear activation functions and their first derivatives in digital neural networks is presented. It uses a simplified neural network which may share most of its components with the native neural network, so that it requires a small amount of additional hardware."
}
@article{Michael1993263,
title = "Integrated precursor architecture as a framework for molecular computer design",
journal = "Microelectronics Journal",
volume = "24",
number = "3",
pages = "263 - 285",
year = "1993",
note = "Asic Packaging Special Issue",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90158-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929390158B",
author = "Michael and Conrad",
abstract = "Molecular computers are natural and artificial information processing systems in which individual macromolecules play a critical role. Multiple architectural possibilities can be contemplated, including conventional serial systems, parallel architectures, tactilizing processors, neural and neuromolecular networks, optomolecular electronic memory media, and hybrid silicon-carbon interfaces. The computational capabilities of these systems are governed by a tradeoff principle that links programmability, computational efficiency and evolutionary plasticity in a complementary fashion. Embedding this principle in the formalism of adaptability theory yields a framework for cost-benefit analysis of molecular computers and computational systems generally. The framework utilizes a stagewise approach to molecular computer development, beginning with a simulated integrated precursor architecture and proceeding to a bonafide integrated realization. The analysis highlights powerful computational synergies that emerge from the domain complementarities of programmable and nonprogrammable modes of computing and from the fabrication complementarities of conventional and carbon-based technologies."
}
@article{tagkey1993iv,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "iv - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90085-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929390085S",
key = "tagkey1993iv"
}
@article{Roy19931,
title = "Editorial — something special for 1993",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "1 - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90086-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929390086T",
author = "Roy and Szweda",
abstract = "Welcome to the first issue of 1993 for MEJ/JSCIC. Because of a higher than usual number of papers, we have chosen to make this a double issue. We are very pleased acknowledge all the hard work by Professor Stojadinovic from the Faculty of Electronic Engineering at the University of Nis in Yugoslavia. In the face of much adversity he has the collected together paper from many of the world's leading experts in the field of power microelectronics. Three of which are extended versions of papers presented at the International Symposium of Power Microelectronics (MADEP) held in Firenze, Italy, in 1991."
}
@article{Ninoslav19932,
title = "Guest editorial: Power microelectronics — The three phases",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "2 - 3",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90087-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929390087U",
author = "Ninoslav and Stojadinovic"
}
@article{Peter19935,
title = "Markets and marketing strategies for smart power ICs",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "5 - 9",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90088-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929390088V",
author = "Peter and Wilson"
}
@article{Matthew199311,
title = "The power semiconductor market in Europe",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "11 - 13",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90089-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929390089W",
author = "Matthew and Towers",
abstract = "Power semiconductors form a vital part of most electronic systems today and yet the power semiconductor market rarely receives the attention that some of the newer ‘state-of-the-art’ semiconductor technologies and products attract. This is despite the fact that parts of the power semiconductor market are growing rapidly and new developments in some areas utilize leading edge technology."
}
@article{Dave199315,
title = "Discrete surface mount products for power applications",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "15 - 19",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90090-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269293900902",
author = "Dave and Hollander",
abstract = "Surface mount technology (SMT) has come a long way since its beginning over 20 years ago. Surface mount designs originally started out as low power applications using small signal semiconductors such as SOT-23 transistors and leadless (MELF) diodes. Additionally, the semiconductor manufacturers who produced these devices put most of their time and effort into silicon technology, and as these performance improvements were made, little or no effort was expanded on the pakaging of the silicon. As the performance capabilities of the silicon improved, it became necessary to make improvements in packaging to take advantage of these new capabilities. Improvements in silicon such as faster switching speeds and higher frequencies of operation of power devices, to name a few, forced the semiconductor manufacturers to concentrate their efforts not only on the silicon, but on the packaging of the silicon as well."
}
@article{tagkey199320,
title = "ASICs Vitesse Introduces VIPER low cost gate array family",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "20 - 27",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90091-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929390091R",
key = "tagkey199320"
}
@article{tagkey199327,
title = "RTP System uses microwave heating",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "27 - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90092-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929390092S",
key = "tagkey199327"
}
@article{tagkey199327,
title = "Intel P6 available in 18 months",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "27 - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90093-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929390093T",
key = "tagkey199327"
}
@article{tagkey199327,
title = "Motorola reveals 68060 technical details",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "27 - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90094-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929390094U",
key = "tagkey199327"
}
@article{tagkey199327,
title = "Hitachi HEMT provides boost for DBS",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "27 - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90095-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929390095V",
key = "tagkey199327"
}
@article{tagkey199328,
title = "Designing with high performance ASICs: J.Di Giacomo, Prentice Hall, NJ, 1992,230pp., US $69.00, £39.50",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "28 - ",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90096-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929390096W",
key = "tagkey199328"
}
@article{tagkey199328,
title = "Surviving the ASIC experience: J. Schroetter, Prentice Hall, N.J., 1992, 205pp., ISBN 0-13-877838-8, US $62.10, £35.50. Contact: Prentice-Hall Inc., Professional and Technical Reference Div, Englewood Cliffs, NJ 07632 USA",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "28 - 29",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90097-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929390097X",
key = "tagkey199328"
}
@article{tagkey199329,
title = "Digital hardware testing: Transistor-level modelling and testing: R. Rajsuman, Artec House, Norwood, MA, USA, 1992, 316pp., £59.00",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "29 - 30",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90098-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929390098Y",
key = "tagkey199329"
}
@article{B199331,
title = "Power semiconductor devices for the 1990s",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "31 - 39",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90099-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929390099Z",
author = "B. and Jayant Baliga",
abstract = "This paper reviews recent progress in power semiconductor technology. The introduction of MOS processing to power semiconductor devices has led to the development of an array of chips that can control large amounts of energy with very little input power. This in turn has led to the creation of smart power technology, which has far-reaching applications in commercial and industrial systems. Although, currently, power semiconductor chips are all made from silicon, recent analysis has indicated that other semiconductor materials, such as silicon carbide, have the potential for completely displacing it in the future."
}
@article{JL199341,
title = "A review of modern power semiconductor devices",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "41 - 54",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90100-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929390100S",
author = "J.L. and Hudgins",
abstract = "A broad overview of modern discrete power semiconductor devices is given. The discussion centers around new device designs and modifications of Schottky rectifiers, insulated gate bipolar transistors (IGBTs), MOS-controlled thyristors (MCTs), gate turn-off thyristors (GTOs), and depletion-mode transistors and thyristors. Electrically and optically triggered devices are included in the discussion. Also, there is a brief description of new developments for devices built from advanced semiconductor materials such as GaAs, SiC, and diamond, including high voltage intrinsic switches."
}
@article{Rupprecht199355,
title = "A smart power transistor for high voltage inverter applications",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "55 - 60",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90101-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929390101J",
author = "Rupprecht and Gabriel",
abstract = "Motors, lighting equipment and power supplied benefit from high voltage smart power integrated circuits. Limitations of standard isolation techniques in respect of reverse operation in inductive load applications, i.e. high dV/dt load, cause standard isolation techniques to fail in these applications. Dielectric isolation techniques are overcoming these problems. This paper describes a new concept for high voltage power integrated circuits using silicon on insulator (SOI) technology in high voltage smart power transistors.
SOI technology enables the integration of vertical power transistors and smart power features such as gate drive, overcurrent and overtemperature shutdown circuitry. Using dielectric isolation techniques, virtually all power transistor families and integrated circuits technologies can be merged. The benefits and limitations of this technology are discussed in connection with a high voltage smart power MOS transistor and an IGBT using SOI technology."
}
@article{Spirito199361,
title = "The bipolar mode FET: a new power device combining FET with BJT operation",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "61 - 74",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90102-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929390102K",
author = "Paolo Spirito and Giovanni Vito Persiano and Antonio G.M. Strollo",
abstract = "In this paper the features of power BMFETs are presented. Characteristics in the off and on states are discussed for realistic cell structures, and the effect of the gaussian doping profile of the surface gate region on the blocking voltage is discussed for new BMFET structures halfway between standard vertical JFET and power BJTs.
A comparative analysis with a standard power bipolar transistor of comparable geometry and doping shows that the new BMFET has higher current ratings at breakdown, larger current gain, does not suffer from current crowding phenomena and has lower saturation voltage."
}
@article{PA199375,
title = "High voltage bipolar transistor with new planar termination",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "75 - 85",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90103-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929390103L",
author = "P.A. and Aloïsi",
abstract = "In the range of medium to high voltage and power applications, the following attributes are required for bipolar devices: 1.
• increased ruggedness, made by increasing the safe operating areas;
2.
• capability to sustain accidental overloads or energy discharge from parasitic inductances;
3.
• improved switching speed to allow an increase of the working system frequency;
4.
• narrowing of the electrical parameter distribution; and
5.
• capability to drive products easily.
Further improvements in the characteristics of bipolar devices concern: 1.
• the saturation voltage; and
2.
• decrease of the die cost by easy manufacturing and process control."
}
@article{Godignon199387,
title = "Analysis of new lateral insulated gate bipolar transistor structures for power applications",
journal = "Microelectronics Journal",
volume = "24",
number = "1–2",
pages = "87 - 97",
year = "1993",
note = "Power Electronics Special Issue ",
issn = "0026-2692",
doi = "10.1016/0026-2692(93)90104-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929390104M",
author = "P. Godignon and J. Fernández and S. Hidalgo and J. Rebollo and J. Millán",
abstract = "This paper aims to describe the physical behaviour of different lateral insulated gate bipolar transistor (LIGBT) structures. It reviews a variety of LIGBTs and a new modification of the basic LIGBT structure consisting of a buried layer, an auxiliary cathode and a highly doped sinker between the MOS channel and the auxiliary cathode. Results from two-dimensional numerical simulations show an improvement in the device current in comparison with other LIGBT structures."
}
@article{Ian1992571,
title = "Buoyant outlook evident at livingston seminar",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "571 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90119-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929290119L",
author = "Ian and Guy"
}
@article{Jo1992572,
title = "USA report: Next generation high performance American processors",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "572 - 576",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90120-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929290120P",
author = "Jo and Ann MacDonald",
abstract = "In the field of general purpose, next-generation 32-bit high performance microprocessors, the “hot engines” in America these days are primarily those that are being driven by the systems companies. It's no longer a question of a company like Motorola saying, “we're going to do this new chip and this is how fast it's going to be,” for that idea has come to an end. With the exception of Intel, the company that has had the PC marketplace locked up for some time now, in terms of its name and functionality, the rest of the world is being driven by the systems companies, especially the workstation people."
}
@article{Henderson1992577,
title = "5 V compatibility with 3.3 V-only CMOS ASICs",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "577 - 580",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90121-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929290121G",
author = "Brian Henderson and Laszlo Gal",
abstract = "A 3.3 V-only CMOS I/O buffer is proposed that interfaces with 5 V CMOS and TTL devices. This new buffer eliminates the 5 V power supply bus on the application specific integrated circuit (ASIC) chip while greatly improving the performance and reliability of the I/O buffer. In addition, the cost of packaging these ASICs is reduced due to removing the need of supporting a 5 V power plane on the package. The interfacing issues and the characteristics of the proposed I/O buffer are examined in detail."
}
@article{James1992581,
title = "GaAs MMICs offer space and cost reductions for handheld telephones",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "581 - 585",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90122-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929290122H",
author = "James and Pemberton",
abstract = "The use of GaAs monolithic microwave integrated circuits (MMICs) for the power amplifier in portable telephones is a quantum leap in terms of technology and it affords major benefits in return especially for handheld applications. Mitsubishi has led the way in the use of MMICs and of the four current suppliers of handheld analogue telephones to the NTT telecom body in Japan, Mitsubishi is the only company using GaAs MMICs for the power amplifier in its telephones, of which it is currently producing 20 000 to 30 000 per month."
}
@article{tagkey1992586,
title = "TriQuint's new datacoms chipsets feature GaAs & silicon ICs",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "586 - 588",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90123-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929290123I",
key = "tagkey1992586"
}
@article{tagkey1992589,
title = "IEDM shows an industry at a crossroads",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "589 - 591",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90124-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929290124J",
key = "tagkey1992589"
}
@article{tagkey1992592,
title = "More companies turning to IC foundries says new ETP report",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "592 - 593",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90125-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929290125K",
key = "tagkey1992592"
}
@article{tagkey1992593,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "593 - 598",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90126-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929290126L",
key = "tagkey1992593"
}
@article{Bafleur1992599,
title = "Physical macromodelling of the dynamic behaviour of CMOS VLSI circuits: Part I",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "599 - 612",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90127-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929290127M",
author = "M. Bafleur and J. Buxo and J.P. Teixeira and I.C. Teixeira",
abstract = "The basic purpose of this paper is to present a physical analysis of the transient behaviour of CMOS circuits. A chain of inverters is used as a vehicle for deriving general conclusions on the intimate physics of the switching process in CMOS digital networks. The analysis emphasizes the role of the dynamic threshold voltages, which definite the initial instants of activity of the switching transistors and stresses the relevance of the intrinsic delay, tid, on the propagation delay time, tid, of an inverting gate. The effect of scaling down the device on the speed of response of these gates is also studied. It is shown that the continuous reduction in tpd, with smaller dimensions, is mainly due to a decrease in tid. The validity of the proposed analysis is ascertained by extensive circuit simulations."
}
@article{Teixeira1992613,
title = "Physical macromodelling of the dynamic behaviour of CMOS VLSI circuits: Part II",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "613 - 623",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90128-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929290128N",
author = "J.P. Teixeira and I.C. Teixeira and M. Bafleur and J. Buxo",
abstract = "In a companion paper [1], a physical model of the dynamic behaviour of a CMOS inverter, based on the physical analysis of the switching mechanism, was presented. The accuracy of this model was shown to be virtually the same as that obtained with SPICE. The aim of this paper is the application of this analytical model to the derivation of circuit-level and logic-level models for complex gates through the definition of an equivalent inverter for each gate and each active transition. These models were implemented in a mixed-level simulator, CINNAMON [2], and were shown to bring about a similar accuracy as that obtained with SPICE, whereas the necessary CPU time was improved by two orders of magnitude."
}
@article{Sahay1992625,
title = "Electrical characterization of interface states in Ni/n-Si(111) Schottky diodes from (C-V) characteristics",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "625 - 632",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90129-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929290129O",
author = "P.P. Sahay and M. Shamsuddin and R.S. Srivastava",
abstract = "Experiments have been performed on Ni/n-Si(111) Schottky diodes fabricated by the vacuum vapor deposition of Ni at ∼10−5 Torr pressure on an n-type «111å oriented silicon wafer. Measured current-voltage and capacitance-voltage characteristics in range frequency range 10 kHz-1 MHz have been analysed. Interface states parameters have been extracted from (C-V) characteristics using a metal-thin interfacial layer-semiconduct (MIS) structure model. The interface states density has been found to be in the range of 1011 cm−2 eV−1 with a peak in the band gap of Si at about 0·51 eV below the conduction band edge."
}
@article{Karafyllidis1992633,
title = "The incomplete depletion approximation in semiconductor heterojunctions",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "633 - 639",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90130-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929290130S",
author = "Yiannis Karafyllidis and Paul Hagouel and Epaminondas Kriezis",
abstract = "Under equilibrium the region near the heterojunction interface is not completely depleted of carriers. As the forward bias is increased, carriers are transported out of the region and the charge density is increased. The well-known depletion approximation is a special case of the more general incomplete depletion approximation."
}
@article{Dias1992641,
title = "Design tools for oversampled data converters: Needs and solutions",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "641 - 650",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90131-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929290131J",
author = "V.F. Dias and V. Liberali and F. Maloberti",
abstract = "The design of oversampled data converters imposes a set of specific trade-offs both at analysis and simulation levels. Because of their intrinsic non-linear nature, these circuits are difficult to analyse correctly using conventional theoretical tools. Furthermore, the accurate estimation of their major performance parameters requires their simulation over an extremely large number of clock cycles, a fact which imposes the use of dedicated behavioural simulators. This paper examines the specific needs in simulating switched-capacitor, noise-shaping data converters. We comment on the existing solutions presented in the literature as well as in the market place and compare them on the basis of three principal qualifying aspects: computation time vs. abstraction level and accuracy of the models; development time abd cost vs. flexibility and user-friendliness; and finally, post-processing facilities available for evaluating system performance. In the final part of the paper we provide details concerning a general purpose and user-friendly behavioural simulator, which we developed (TOSCA [1,2]). This tool represents a good trade-off between accuracy, flexibility, ease of use and computation time."
}
@article{ChrisWH1992651,
title = "Technology-independent design using the ASA silicon compiler",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "651 - 664",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90132-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929290132K",
author = "Chris W.H. and Strolenberg",
abstract = "This paper presents the possibilities offered by ASA's Topology Description Language and Compactor tool for creating technology-independent module generators. It will be shown that the actual layout work has to be done only once for a symbolic library which can be compacted to various technologies. The compacted results are comparable in density and performance to handcrafted layouts; furthermore the design time for implementing new technologies is substantially shortened."
}
@article{Park1992665,
title = "Sensor effect in YBa2 Cu3 Oy",
journal = "Microelectronics Journal",
volume = "23",
number = "8",
pages = "665 - 669",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90133-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929290133L",
author = "Jong-Hee Park and P. Kostic and T. Sreckovic and M. Kovačevic and M.M. Ristic",
abstract = "The high-Tc superconducting material YBa2 Cu3 Oy, well known as a 1–2–3 compound, shows other very interesting properties. One of them is very strong conductivity-oxygen content dependence. On the basis of our previous measurements, an investigation of dilatation synthesis, X-ray diffraction (XRD) analysis and conductivity measurements were performed. The results on quenched and slowly cooled samples show a phase transition region and an obvious interdependence between conductivity, unit cell volume and oxygen content."
}
@article{Roy1992487,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "487 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90053-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900534",
author = "Roy and Szweda",
abstract = "This issue features a review of technological developments in wide bandgap electronic materials and devices at the moment that Sony announced its new blue laser diode. A nics coincidence I would say which gives Dr Henini's article an additional boost in topicality."
}
@article{Marten1992488,
title = "Overcoming photolith problems in DRAM fabrication",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "488 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90054-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900545",
author = "Marten and Terpstra"
}
@article{Marten1992489,
title = "Multi-film power hybrid circuit",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "489 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90055-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900556",
author = "Marten and Terpstra"
}
@article{Marten1992489,
title = "CVD silicon oxynitride film process",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "489 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90056-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900567",
author = "Marten and Terpstra"
}
@article{Marten1992490,
title = "A process for vertical current power MOSTs",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "490 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90057-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900578",
author = "Marten and Terpstra"
}
@article{JoAnn1992493,
title = "SEP effects in space",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "493 - 499",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90058-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900589",
author = "Jo Ann and McDonald"
}
@article{Mohamed1992500,
title = "Review article: Wide bandgap electronic materials",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "500 - 506",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90059-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929290059A",
author = "Mohamed and Henini",
abstract = "In the mainstream world of silicon, recent developments in the field of wide bandgap semiconductors may have gone unremarked. These materials, which include gallium nitride, zinc selenide, silicon carbide and diamond, offer the promise of high performance devices. For example, opotoelectronic devices.operating in the visible range with great opportunity for advanced data communications and optical storage. However, the large number of defects and difficulties in preparing n- and p-type material have hampered their broader application."
}
@article{Peter1992507,
title = "Physical methods for microwave circuit design",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "507 - 509",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90060-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929290060E",
author = "Peter and Ladbrooke",
abstract = "GaAs Code Ltd was formed in 1988 as a software company dealing in device physical methods for FET and HEMT design, GaAs IC process design and MMIC design. The company develops and sells commercial software packages for these purposes, and undertakes contract work on both sole contractor basis, and as a collaborating partner in large consortia projects."
}
@article{Bewtra1992511,
title = "A switched gate synaptic weighting circuit for optically coupled neural networks",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "511 - 515",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90061-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900615",
author = "N. Bewtra and G.A. Jullien and W.C. Miller",
abstract = "This paper presents results obtained with the use of a switched gate circuit realization of the multiplier function for an optically coupled synaptic weighting element. The results include both simulation and experimental measurements. The optically coupled synapse circuit employs a photosensitive element to input weighting coefficients to the neural network."
}
@article{Blight1992517,
title = "Adaptive nondeterministic routing in mesh connected networks",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "517 - 521",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90062-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900626",
author = "David C. Blight and Robert D. McLeod",
abstract = "A new nondeterministic adaptive routing algorithm for routing messages in faulty processor arrays is presented. This algorithm adjusts bias values concurrently with network operation, and allows the network to adjust routing parameters to compensate for communication congestion and faulty processors. Application to WSI processor arrays is discussed."
}
@article{Tomczuk1992523,
title = "Near-optimal PLA input variable pairing using autocorrelation techniques",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "523 - 531",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90063-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900637",
author = "R. Tomczuk and D.M. Miller",
abstract = "One logic optimization that can be used to reduce the area required by a PLA is to use multi-bit rather than single-bit input decoders. In such a PLA the input variables are partitioned into disjoint subsets, each of which is used as the input to a decoder. The outputs of the decoders instead of the input signals and their complements are used in the core of the PLA. This paper addresses the problem of assigning pairs of input variables to two-bit decoders. Variable pair selection is based on the total autocorrelation of a system of Boolean functions."
}
@article{ChuanJin1992533,
title = "A signed hypergraph model of the constrained via minimization problem",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "533 - 542",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90064-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900648",
author = "Chuan-Jin and Shi",
abstract = "We propose the use of the notion of hypergraphs to describe the general constrained via minimization (CVM) problem. We show that the formulation of the general CVM by means of hypergraphs turns out to be surprisingly simple and general. In the case of two-layer routing, a signed hypergraph model is introduced. On the basis of this model, we develop a fast (linear-time) heuristic and obtain promising results; we also present two methods of modeling multi-way splits by graphs, producing better results than all previous methods."
}
@article{CN1992543,
title = "Systematic design of systolic arrays for computing multiple problem instances",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "543 - 553",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90065-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900659",
author = "C.N. and Zhang",
abstract = "The one-to-one space-time mapping approach has been extended to mapping multiple problem instances onto a single systolic array. Compared with previous methods, the proposed approach significantly reduces the number of I/O pins on the chip as well as increases the throughput and the ratio of throughput over space."
}
@article{Jones1992555,
title = "Bipolar VLSI — An application for a high-performance microcontroller",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "555 - 559",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90066-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929290066A",
author = "P.L. Jones and P. Day",
abstract = "This paper looks at the special merits of bipolar differential logic for high performance VLSI. A design route is developed using a high level hardware description language leading to a semicustom style of automatic layout. Preliminary assessment from simulation suggests that 100 MHz operation of an eight-bit high-functionality microcontroller can be achieved using this approach."
}
@article{Birkner1992561,
title = "A very-high-speed field-programmable gate array using metal-to-metal antifuse programmable elements",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "561 - 568",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90067-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929290067B",
author = "J. Birkner and A. Chan and H.T. Chua and A. Chao and K. Gordon and B. Kleinman and P. Kolze and R. Wong",
abstract = "A ViaLinkTM programming element, which forms a metal-to-metal link when programmed, has been incorporated in a CMOS field programmable gate array. The low impedance and small physical size of the ViaLink, combined with an innovative logic cell design, result in an FPGA with very high speed, high density, and low power consumption. Advanced CAE design tools permit fast implementation of high gate utilization designs with logic functions operating at speeds in excess of 100 MHz. This paper describes the logic cell structure, interconnect architecture, performance characteristics and CAE tools developed for the QL8 × 12, the first member of a family of high-speed FPGAs."
}
@article{G1992569,
title = "CAD Accelerators: A. P. Ambler, P. Agrawal and W. R. Moore (Editors) North-Holland, Amsterdam, 1991, 300 pp., Dfl. 175·00, US$100·00",
journal = "Microelectronics Journal",
volume = "23",
number = "7",
pages = "569 - 570",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90068-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929290068C",
author = "G. and Russell"
}
@article{Roy1992403,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "403 - 404",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90069-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929290069D",
author = "Roy and Szweda"
}
@article{Keith1992405,
title = "Guest editorial: Is very high pin count necessary?",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "405 - 408",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90070-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929290070H",
author = "Keith and Gurnett"
}
@article{JoAnn1992409,
title = "USA report: Current issues and progress in advanced packaging",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "409 - 413",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90071-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900718",
author = "Jo Ann and McDonald"
}
@article{tagkey1992414,
title = "Japan news round-up",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "414 - 417",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90072-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900729",
key = "tagkey1992414"
}
@article{Marten1992418,
title = "Patent scan on semiconductors and integrated circuits",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "418 - 420",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90073-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929290073A",
author = "Marten and Terpstra"
}
@article{Martin1992421,
title = "The changing face of surface mount technology",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "421 - 425",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90074-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929290074B",
author = "Martin and Wickham",
abstract = "Much has been written in the past about the take-up of surface mount technology (SMT). Ten years ago companies were predicting phenomenal growth rates, with SMT taking over by the start of this decade. In practice, companies have adopted the technology with some hesitancy."
}
@article{PJ1992426,
title = "GaAs bipolar transistors for microwave and digital circuits",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "426 - 435",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90075-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929290075C",
author = "P.J. and Topham",
abstract = "The GaAs/GaAlAs heterojunction bipolar transistor is a promising device for use in fibre-optic communications and advanced radar systems that need high-speed digital circuits combined with microwave analogue functions. The interest in GaAs bipolar processes is that they combine the microwave advantages of GaAs with the circuit performance of bipolar transistors."
}
@article{Chen1992437,
title = "Circuit design techniques for multi-bit third-order oversampling converter",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "437 - 442",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90076-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929290076D",
author = "Feng Chen and Bosco Leung",
abstract = "Third-order sigma-delta ADCs and DACs with 3-bit internal quantization have been implemented with 1·2 μm CMOS technology, employing the individual averaging technique to eliminate the harmonic distortion due to element mismatch. The projected result of the ΣΔ ADC has a dynamic range of 102 dB from the simulation. The extracted circuit from the layout runs at a clock rate of 5 MHz. In addition, a prototype third order ΣΔ DAC implemented using discrete components has been tested. Testing results show that the harmonic distortion is reduced by 16 dB by using the individual averaging technique, compared with a conventional D/A structure."
}
@article{Parameswaran1992443,
title = "Integrated CMOS transducers for thermal scene generation",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "443 - 449",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90077-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929290077E",
author = "M. Parameswaran and M. Syrzycki and R. Chung",
abstract = "In this paper we present a silicon black-body emitter array chip fabricated using the standard 3 μm CMOS technology available through the Canadian Microelectronic Corporation and a maskless post-fabrication micromachining process developed at Simon Fraser University. The transducer chip comprises of a 2 × 2 array of silicon black-body emitters (thermal pixels) integrated with on-chip control circuitry. The paper will discuss the transducer design, micromachining-related design constraints on the CMOS layout design, the micromachining technique and the circuit performance."
}
@article{Wessel1992451,
title = "A CMOS thermally-isolated heater structure as a substrate for semiconductor gas sensors",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "451 - 456",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90078-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929290078F",
author = "S. Wessel and M. Parameswaran and S.R. Morrison and R.F. Frindt",
abstract = "A heater structure for gas sensors is realized by utilizing standard CMOS technology together with post-process etching. The heater, fully suspended over an ≈100 μm deep cavity, is capable of supplying temperatures necessary for the operation of most semiconductor gas sensors. Various heater structures are characterized and results show that the power requirement to achieved a temperature of 100°C for a polysilicon heater of 3 μm2 cross-section and 300–500 μm length is on the order of 10 mW."
}
@article{Kung1992457,
title = "A CAD model of low frequency noise behaviour in dual-collector bipolar transistors",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "457 - 462",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90079-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929290079G",
author = "W. Kung and A. Nathan",
abstract = "The temperature dependence of low frequency noise behaviour is modelled for the dual-collector bipolar transistor. This CAD model, implemented in SPICE, is verified with measurement results of low frequency noise in such structures for the temperature range 273 K ⩽ T ⩽ 373 K. The behaviour of single-ended and differential noise currents is shown to be valid over the frequency range f ⩽ 100 kHz and for device operation at medium injection levels. In this regime, there exists a high positive correlation between collector noise currents. As a result, the differential output noise is extremely low thus making such structures potentially useful for the resolution of small magnetic fields of nanotesla strength."
}
@article{Manku1992463,
title = "Carrier transport parameters for devices based on Si1−xGex strained layers",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "463 - 469",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90080-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929290080K",
author = "T. Manku and A. Nathan",
abstract = "The lattice mobility of strained SiGe is obtained using acoustic, nonpolar optical, and alloy scattering mechanisms. As expected, the mobility is a tensor with different values, since the valence band structure as a result of the strain is found to have 2-fold symmetry. The band structure is obtained using a generic expression that is valid for all strained semiconductors; this expression has been derived taking into account spin orbit coupling effects."
}
@article{Vadekar1992471,
title = "Pressure-sensitive integrated silicon optical guided-wave structures",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "471 - 477",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90081-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929290081B",
author = "A. Vadekar and A. Nathan and W.P. Huang",
abstract = "A micromechanical pressure sensor based on an interferometric silicon optical ARROW waveguide is examined. The deflection and extension of a suspended waveguide beam due to a uniformly applied pressure is analyzed. The resulting phase change in the propagating wave is characterized in terms of beam length and pressure."
}
@article{Z1992479,
title = "Current-mode lowpass filters in CMOS technology",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "479 - 481",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90082-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929290082C",
author = "Z. and Wang",
abstract = "The implementation of CMOS lowpass filters in the current domain is described. Several lowpass filters are presented and their performances are compared. It is shown that a first-order lowpass filter with a constant cutoff frequency can be obtained with a capacitor and a total of four transistors. All filters are capable of handling large signals. The current gain of the filter can be easily achieved by the aspect ratio of the transistors."
}
@article{MS1992482,
title = "Digital systems testing and testable design: M. Abramovici, M.A. Breur and A.D. Friedman. Computer Science Press, New York, 1991, 652 pp., £43.95",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "482 - 483",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90083-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929290083D",
author = "M.S. and Harris"
}
@article{PD1992483,
title = "Electro-optical system design for information processing: Clair L. Wyatt. McGraw-Hill, NY, 1991, 342 pp., £45.00",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "483 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90084-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929290084E",
author = "P.D. and Picton"
}
@article{tagkey1992484,
title = "Diary",
journal = "Microelectronics Journal",
volume = "23",
number = "6",
pages = "484 - 486",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90085-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929290085F",
key = "tagkey1992484"
}
@article{tagkey1992321,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "321 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90104-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269292901049",
key = "tagkey1992321",
abstract = "In this issue's guest editorial, Jon Howes looks at the opportunities for liaison between Japanese firms and foreign universities in semiconductor research. Howes is a manager in Fujitsu's European R&D Labs and a visiting professor at Newcastle University."
}
@article{tagkey1992322,
title = "Japanese news round-up: Comline international news service, Tokyo",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "322 - 325",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90105-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929290105A",
key = "tagkey1992322"
}
@article{Roy1992326,
title = "Intel and IBM integrating out the MCM",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "326 - 328",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90106-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929290106B",
author = "Roy and Szweda",
abstract = "Electronics R&D is becoming prohibitively expensive and often the only way to continue to make progress is as part of a joint effort. Many companies have realised this and such technological alliances are making the news nearly every week. Sadly, just about all of these announcements concern chip R&D and prospects for solving the problems of packaging are as grim as ever. At this rate, multi-chip modules will have been just a minor diversion on the route to the single chip computer."
}
@article{JoAnn1992329,
title = "Signals of a USA upturn",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "329 - 330",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90107-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929290107C",
author = "Jo Ann and McDonald",
abstract = "Positive and negative charges may make the world go round, but there's been an overabundance of negative input in the USA, which at long last shows signs of pushing in the opposite direction."
}
@article{Marten1992331,
title = "Patent survey on semiconductors",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "331 - 334",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90108-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929290108D",
author = "Marten and Terpstra"
}
@article{tagkey1992335,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "335 - 336",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90109-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929290109E",
key = "tagkey1992335"
}
@article{Xavier1992337,
title = "Emerging trends in E-beam diagnostics",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "337 - 343",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90110-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929290110M",
author = "Xavier and Larduinat",
abstract = "Only a few years ago, IC design debug, device characterization, yield enhancement and failure analysis were performed with 20-year-old mechanical probing techniques. Today, virtually every major semiconductor manufacturer in the world uses e-beam probing. Engineers who have scarcely seen a scanning electron microscope are regularly manipulating an electron-beam prober using CAD-type navigational software which makes the complex technology essentially transparent and intuitive.
But this broad acceptance is just the first step in a fundamental shift within device analysis, which over the next few years will affect every engineer in the semiconductor industry. The success of e-beam probing is prompting the use of complementary technologies, networked paperless laboratories and new automation techniques which extend e-beam concepts to a far broader engineering base. These trends are the subject of this article."
}
@article{McMahon1992345,
title = "Systolic VLSI arrays for the metric approach to pattern recognition",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "345 - 354",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90111-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929290111D",
author = "James A. McMahon and Michael A. Pothier and Virenda C. Bhavsar",
abstract = "This paper presents a VLSI implementation of a parallel algorithm using a diagonal systolic array for on-line pattern recognition. It reveals a natural way of handling large data transfers to the array from the host computer while maximizing the silicon area using a serial approach instead of a standard parallel approach. The important design concerns of expandability and flexibility of the array architecture are discussed."
}
@article{Z1992355,
title = "CMOS positive and negative grounded resistors using MOS transistors operating in saturation",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "355 - 357",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90112-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929290112E",
author = "Z and Wang",
abstract = "Using CMOS transistors operated in the saturation region, both positive and negative grounded resistors are implemented. The resulting resistors are capable of handling large signals with low distortion. A simple approach to obtain a step up/down grounded resistor without the need of a counter and a D/A converter is proposed."
}
@article{Masami1992359,
title = "A novel configuration for voltage-mode biquads using a single current conveyor",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "359 - 362",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90113-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929290113F",
author = "Masami and Higashimura",
abstract = "A novel general circuit configuration for the relisation of voltage-mode biquad filters with a high input impedance, which enables the circuits to be cascaded without requiring any impedance matching device, is presented. The circuit can realise lowpass, highpass, bandpass, notch, and allpass transfer functions with a single current conveyor (CCII) and four or six passive elements."
}
@article{Bridges1992363,
title = "Novel near-field probe for on-wafer integrated circuit measurements",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "363 - 369",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90114-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929290114G",
author = "G.E. Bridges and T.S. Forzley and D.J. Thomson",
abstract = "A non-invasive technique for measuring both the electrical and topographical characteristics of high frequency circuits has been developed. The technique is based on the scanning force microscope instrument, where the instrument probe mechanism is modified to measure the charge distribution at a localized site on the circuit under test. Experimental testing of the probe's sensitivity and resolution is performed on an interconnect line. Both numerical simulation and experimental measurement yield a present resolution of 15 μm for the system."
}
@article{Z1992371,
title = "An all-MOS adjustable differential amplifier with improved temperature performance",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "371 - 374",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90115-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929290115H",
author = "Z. and Wang",
abstract = "An all-MOS, adjustable differential amplifier circuit is presented, consisting of a linear MOS transconductor and a linear MOS resistor. The circuit structure is very simple and needs only a small fraction of the chip area that is required by the conventional approach. The temperature coefficient of the gain is of the order of a carbon film resistor. The amplifier can be used to implement a AGC circuit."
}
@article{NA1992375,
title = "Characteristics of the resist development process in electron beam lithography",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "375 - 381",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90116-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929290116I",
author = "N.A. and Madjarova",
abstract = "Two characteristics of the photoresist development process — the solubility curves and the average development rate at different exposure doses — are used to analyse the response of electron-beam exposed resists. The experimental results show that the energy absorption strongly influences the image quality in electron resists whereas the induction effects keep their importance for electron-beam exposed photoresists. It is possible to find process latitudes where the resist response is very near to the optimum case — the threshold develop rate."
}
@article{Ročak1992383,
title = "Quality of hybrid circuits after soldering with “no residue” flux",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "383 - 386",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90117-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929290117J",
author = "D. Ročak and J. Potočar and J. Fajafar",
abstract = "New “no residue” fluxes from different producers, which after soldering do not require cleaning, were evaluated. After soldering, ionic residues were determinated by the dynamic extraction method. Insulation resistance on a test circuit with small distances between conductors was measured after soldering and after 1000 h at 40°C, 96% RH with voltage applied. The quality of hybrid circuits without cleaning after soldering was also evaluated."
}
@article{AlKhalili1992387,
title = "Optimization of high performance BiCMOS buffer circuit for chip area, delay and power dissipation",
journal = "Microelectronics Journal",
volume = "23",
number = "5",
pages = "387 - 402",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90118-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929290118K",
author = "D. Al-Khalili and M.O. Esonu",
abstract = "Switching delay, chip area and power dissipation are conflicting criteria for designing high performance VLSI logic circuits. This paper describes the optimization of a BiCMOS buffer in terms of these criteria, by studying the influence of different MOS and bipolar device parameters on the switching speed and power dissipation of the buffer. An optimization problem has been formulated with the objective of minimizing the product of the chip area and delay (AT), the power-delay product (PT) or a combination of these."
}
@article{StanleyL1992239,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "239 - 240",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90016-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929290016T",
author = "Stanley L. and Hurst"
}
@article{tagkey1992241,
title = "Japanese news round-up",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "241 - 244",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90017-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929290017U",
key = "tagkey1992241"
}
@article{Roy1992245,
title = "Low voltage CMOS — Having your cake and eating it?",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "245 - 247",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90018-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929290018V",
author = "Roy and Szweda"
}
@article{JoAnn1992248,
title = "USA report: multi-chip modules— Really in business?",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "248 - 250",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90019-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929290019W",
author = "Jo Ann and McDonald",
abstract = "Multi-chip modules (MCMs) have of course been used in US military system for some time, saving precious space and weight when packaging high performance, highly integrated circuits. If we regard only the commercial world as reality, however, MCMs still have a way to go."
}
@article{Marten1992251,
title = "Patent survey on microelectronics",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "251 - 254",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90020-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900202",
author = "Marten and Terpstra"
}
@article{Malcolm1992255,
title = "Economics of semi-conductor production",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "255 - 265",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90021-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929290021R",
author = "Malcolm and Penn"
}
@article{tagkey1992266,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "266 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90022-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929290022S",
key = "tagkey1992266"
}
@article{GH1992267,
title = "Laser interconnection techniques for defect avoidance in large-area restructurable silicon systems",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "267 - 272",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90023-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929290023T",
author = "G.H. and Chapman",
abstract = "Expanding IC sizes beyond the current chip limits for large area/ wafer-scale systems requires the use of circuit redundancy and defect replacement techniques. Aspects of a post-fabrication defect avoidance process using a laser to make low resistance connections and cut lines in 3 and 1·2μm technologies are described."
}
@article{R1992273,
title = "Growth of thin thermal silicon dioxide films with low defect density",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "273 - 281",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90024-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929290024U",
author = "R. and Singh",
abstract = "The use of thin gate oxides in scaled MOS-VLSI devices demands good control over oxide thickness, oxide defects, hot carrier instability and breakdown behaviour. In the quest to grow high quality SiO2 films with low defect density, an investigation on the effect of growth and annealing ambients on oxide properties is reported. Thin SiO2 films (10–60 nm) grown at 900–1000°C in O2/O2 + N2 were characterized by C-V and I-V techniques using Al/SiO2/p-Si and poly-Si/SiO2/p-Si structures. Quality oxides with a very low density of physical defects due to contamination/pinholes (responsible for dielectric breakdown at fields lower than the intrinsic breakdown fields), H2O-related and intrinsic defects (acting as electron and hole traps) have been demonstrated. The effect of post-oxidation annealing in N2 and O2 on defect-related low-field and intrinsic breakdown behaviour was studied. The occurrence of low-field pre-breakdowns can be reduced by a short O2 anneal, in agreement with our earlier results. Oxide device worthiness was tested by fabricating N-MOSFETs."
}
@article{Sparks1992283,
title = "A comparison between microwave reflectance, thermal wave modulated reflectance and defect etching for detecting transition metals in silicon",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "283 - 290",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90025-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929290025V",
author = "D.R. Sparks and A.J. Levitan",
abstract = "The detection of transition metal contamination in silicon after rapid thermal annealing is examined using three different techniques. Two nondestructive methods — microwave reflectance and thermal wave modulated reflectance — are compared along with destructive defect etching with both the Sirtl and Wright etch. The same samples are analyzed by each technique. Microwave reflectance and Sirtl defect etching are found to be the most sensitive methods of those studied. Further comparisons are also made with the results of other metal contamination/rapid thermal annealing studies."
}
@article{Wu1992291,
title = "Effective buffer insertion of clock tree for high-speed VLSI circuits",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "291 - 300",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90026-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929290026W",
author = "Bo Wu and Naveed A. Sherwani",
abstract = "Clock delay and skew minimization is an important problem in design and layout of high speed VLSI circuits. Clock delay and skew can be minimized either by a good routing strategy, or by inserting buffers in the clock tree. In this paper we develop an effective buffer insertion algorithm for high speed clock layout to minimize the clock delay and skew. Our approach is based on a new interconnection delay model, in which several practical factors such as crossunders and vias are considered in the delay calculation; furthermore, both minimum-size buffers and cascaded clock buffers are used to minimize the total clock delay. The algorithm runs in O (n) time, where n is the number of legal buffer positions in the clock tree, and obtains up to 95% clock delay reduction on practical examples."
}
@article{Zhenhua1992301,
title = "A linearized source-coupled pair with a dynamic bias current",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "301 - 304",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90027-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929290027X",
author = "Zhenhua and Wang",
abstract = "Operating as a transconductor, CMOS operational transconductance amplifiers (OTA) are only tolerant of small signals as they suffer from severe nonlinearity because of the source-coupled pairs in which the bias current is constant. In this paper, the MOS source-coupled pair is linearized by introducing a dynamic bias current. The new linear source-coupled pair was simulated, causing a total harmonic distortion of as low as 70 ppm for Vinp−p up to 6 V at ± 5 V supply."
}
@article{Jozef1992305,
title = "Recent advances in IR detector technology",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "305 - 313",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90028-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929290028Y",
author = "Jozef and Piotrowski",
abstract = "Recent efforts in IR detector research have been directed towards improving the performance of single element devices, large electronically scanned arrays and higher operating temperature. Another important aim is to make IR detectors cheaper and more convenient to use. The recent advances in technology of photodetectors are discussed with special emphasis on intrinsic photodetectors operated at near room temperature."
}
@article{tagkey1992315,
title = "Successful ASIC design the first time through: J. P. Huber and M. W. Rosneck Van Nostrand Reinhold, New York, 1991, 200 pp., £32.50",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "315 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90029-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929290029Z",
key = "tagkey1992315"
}
@article{tagkey1992315,
title = "BiCMOS/CMOS system design: J. E. Buchannan McGraw-Hill, New York, 1991, 322 pp., £39.95",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "315 - 316",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90030-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900305",
key = "tagkey1992315"
}
@article{tagkey1992316,
title = "Hardware design and simulation in VAL/VHDL: L. M. Augustin, D. C. Luckham, B. A. Gennart, Y. Huh and A. G. Stanculescu Kluwer Academic Publishers, Norwell, MA, 1990, 352 pp.,£42.95, US$69.95, Dfl.152.00",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "316 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90031-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929290031U",
key = "tagkey1992316"
}
@article{tagkey1992316,
title = "The verilog hardware description language: Donald E. Thomas and Philip Moorby Kluwer Academic Publishers, Norwell, MA, 1990, 300 pp., £42.95, US$69.95, Dfl.152.00",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "316 - 317",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90032-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929290032V",
key = "tagkey1992316"
}
@article{tagkey1992317,
title = "VLSI design techniques for analog and digital circuits: R. L. Geiger, P. E. Allen and N. R. Strader McGraw-Hill, New York, 1990, 966 pp., £49.00",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "317 - 318",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90033-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929290033W",
key = "tagkey1992317"
}
@article{tagkey1992318,
title = "Parallel algorithms and architectures for DSP applications: Magdy A. Bayoumi Kluwer Academic Publishers, Norwell, MA, 1991, 283 pp.,£49.75, US$72.00, Dfl.165.00",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "318 - 319",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90034-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929290034X",
key = "tagkey1992318"
}
@article{tagkey1992319,
title = "Assessing fault model and test quality: K. M. Butler and M. R. Mercer Kluwer Academic Publishers, Norwell, MA, 1992, 132 pp.,£40.75, US$59.95, Dfl.135.00",
journal = "Microelectronics Journal",
volume = "23",
number = "4",
pages = "319 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90035-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929290035Y",
key = "tagkey1992319"
}
@article{tagkey1992155,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "155 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90001-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929290001H",
key = "tagkey1992155",
abstract = "This issue features selected papers from the 1991 Canadian Conference on Very Large Scale Integration (CCVLSI '91). Co-chairmen of the conference, J.L. Mason and L.E. Peppard have been asked to provide readers with some background relating to this conference and to the evolution of microelectronics systems research in Canada."
}
@article{tagkey1992156,
title = "Japanese news round-up: Comline international news service, Tokyo",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "156 - 158",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90002-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929290002I",
key = "tagkey1992156"
}
@article{Roy1992159,
title = "Indium phosphide, the cinderella of electronics",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "159 - 161",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90003-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929290003J",
author = "Roy and Szweda",
abstract = "If we were to draw up a pecking order of semiconductors, we would undeniably rank silicon as pre-eminent. Gallium arsenide would come a good second - everyone has heard of gallium arsenide even if most don't know what it is and what it does. But what to place in third position? The answer is, of course, indium phosphide (InP). The status of this enigmatic material can be likened to that of Cinderella, step-sister of Si and GaAs, but it may come as a surprise to learn that it has an entire conference, a very succesful one I should add, devoted to it."
}
@article{JoAnn1992162,
title = "USA report: ‘Cool CMOS’ gives superconducting a boost",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "162 - 163",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90004-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929290004K",
author = "Jo Ann and McDonald"
}
@article{Marten1992164,
title = "Patent survey on semiconductors",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "164 - 166",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90005-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929290005L",
author = "Marten and Terpstra"
}
@article{Song1992167,
title = "A VLSI placement method using Tabu search",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "167 - 172",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90006-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929290006M",
author = "L. Song and A. Vannelli",
abstract = "A new placement method is presented in this paper. A quadratic optimization problem is formulated to generate a global initial placement. The novel strategy using the Tabu Search technique, which attempts to overcome the limitations and problems of moving from a local optimal point, is adapted to improve the placement quality. The method has been implemented in the placement program TS and tested on five benchmark circuits. The experimental results show that the new algorithm and codes in TS yield placements that are 6–14% better (in estimated half perimeter wire length) than the well-known simulated-annealing based layout package Timber WolfSC5.4. In addition, the speed of TS is at least twenty times faster on tested problems, including several gate array benchmark examples."
}
@article{Yeung1992173,
title = "A cascadeable pipeline Fast Fourier Transform switch with built-in self-test",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "173 - 178",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90007-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929290007N",
author = "C.P.S. Yeung and C.H. Chan and T.A. Kwasniewski and V. Szwarc and L. Desormeaux",
abstract = "A pipeline Fast Fourier Transform (FFT) switch with built-in self-test is described. The pipeline FFT, a one-dimensional systolic array, is composed of complex butterflies and FFT switches. The FFT switches are cascadeable and can support the implementation of a radix-2 pipeline FFT of up to 8192 points. The 10 000 gate ASIC device is fabricated in 1.5μm HCMOS gate array technology, and supports a throughput of 25 Mwords s−1."
}
@article{RichardF1992179,
title = "Combining boundary scan with I/O and other system functions to reduce system complexity",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "179 - 184",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90008-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929290008O",
author = "Richard F. and Hobson",
abstract = "IEEE standard P1149-1989 provides for a variety of test bus architecture ranging from 4 signals to over 17 signals. Chips incorporating a complete system or major subsystem may not be able to afford the luxury of adding so many extra dedicated signals. This paper presents an example where the system I/O space is effectively augmented to support multiple-level testing strategies, including boundary scan, without adding dedicated test pins. It is also shown that the architectural structure of an embedded processor system can be greatly simplified with these techniques."
}
@article{Trofimenkoff1992185,
title = "A high resolution CMOS A/D converter for operation at 175°C",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "185 - 190",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90009-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929290009P",
author = "F.N. Trofimenkoff and J.W. Haslett and S.E. Nordquist and D.J. Paslawski and C.O. Li",
abstract = "A high resolution analog-to-digital converter based on a synchronized pulse-width modulator is described. The PWM circuit is used to produce a high-resolution, direct-counting A/D converter that requires only one counter. The recently patented circuit has been implemented in 3 μm CMOS and operates up to 175°C."
}
@article{Haines1992191,
title = "QUISC3: A distributed processing silicon compiler",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "191 - 196",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90010-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929290010X",
author = "D. Haines and S. Penstone and S. Tavares",
abstract = "QUISC3 is a distributed processing silicon compiler, operating under the ELECTRIC Layout Tool. This new version of QUISC is designed to perform distributed processing on a LAN of workstations. It exploits the inherent hierarchy of VHDL to create macrocells on remote network servers, thereby improving both user response time and the allowable design size."
}
@article{Sul1992197,
title = "Self-pruning binary tree architectures for improved interconnection fault tolerance",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "197 - 204",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90011-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929290011O",
author = "C. Sul and R.D. McLeod and W. Kinsner",
abstract = "This paper proposes a self-pruning binary tree architecture to tolerate faults in a wafer scale integration (WSI) environment. The proposed architecture employs a bottom-up approach to recon-figure a linear pipelined array on a potentially defective WSI array using a binary tree interconnection scheme. The binary tree in the proposed architecture is generated by successive formation of hierarchical modules and can be laid out by using the H-tree layout. For N processing elements (PEs) on the wafer, reconfiguration time for this architecture is Θ (log N). The propagation delay is also bounded by Θ(log N) and is independent of the number of faulty PEs. This architecture achieves 100% PE utilization if the interconnections and the switch nodes are fault-free. The proposed architecture is highly reliable because, by pruning faulty subtrees, it can tolerate up to (N − 1) faulty PEs which may include clustered faults."
}
@article{Wu1992205,
title = "A multiple signature compaction scheme for BIST",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "205 - 214",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90012-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929290012P",
author = "Y. Wu and A. Ivanov",
abstract = "The approach of checking multiple signatures has recently received attention because of the associated advantages of small aliasing, easy computation of fault coverage, shorter average test time, and increased fault diagnosability. In this paper we propose a BIST multiple-signature compaction scheme that achieves negligibly small aliasing against reasonable extra hardware expenses compared with known standard single signature schemes and against less expenses than those incurred by other “low aliasing probability” schemes. Experimental results illustrate possible tradeoffs between the number of signatures, their width (number of bits) and hardware requirements."
}
@article{JA1992215,
title = "Mixed-mode modeling for top-down circuit design and verification",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "215 - 222",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90013-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929290013Q",
author = "J.A. and Barby",
abstract = "Simulation times may be reduced while maintaining simulation accuracy if one utilizes mixed-mode and behavioral modeling. In many cases these models are natural within a top-down/ bottom up design style. The main thrust of this paper is that mixed-mode modeling (behavioral modeling plus event handling) is a useful tool even for pure analog components for obtaining fast, accurate models."
}
@article{Woo1992223,
title = "System-level modelling in VHDL",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "223 - 230",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90014-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929290014R",
author = "A.C. Woo and L.E. Peppard",
abstract = "Uninterpreted models such as statecharts and Petri nets are powerful modelling paradigms at the highest level of abstraction and are useful at preliminary stages of system design. In this paper, translation strategies are presented to translate these two paradigms into VHDL. Criteria are presented and used to evaluate the capability of VHDL to capture models at high levels of abstraction. This paper will show that translations that meet all specified criteria are possible, but that problems are still encountered. Some suggestions to enhance VHDL's modelling potential at the uninterpreted level are given."
}
@article{Sean1992231,
title = "High-level ASIC design tools",
journal = "Microelectronics Journal",
volume = "23",
number = "3",
pages = "231 - 238",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90015-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929290015S",
author = "Sean and Redmond",
abstract = "New high-level design tools developed for ASIC designers are making it possible to assess accurately specification priorities at a much earlier stage in the design process. Silicon considerations can be built into the design from the beginning, leading to more efficient and cost effective devices. More accurate evaluations earlier on make it far less likely that designs will be created which cannot be manufactured, eliminating time-consuming, cost revisions and minimising time-to-market."
}
@article{tagkey199283,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "83 - 84",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90036-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929290036Z",
key = "tagkey199283"
}
@article{tagkey199285,
title = "Japanese news round-up",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "85 - 87",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90037-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900372",
key = "tagkey199285"
}
@article{Roy199288,
title = "Multichip modules- uniting device and package technology?",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "88 - 89",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90038-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900383",
author = "Roy and Szweda",
abstract = "At the high performance end of computing and telecoms, the techniques employed to package advanced ICs have somewhat lagged behind device fabrication processes. Drastic measures are called for to catch up. Around the world collaborative projects seek to remedy the deficiencies of current packaging technology. The results of these projects may be further reaching than many think; soon the distinction between device fabrication and device packaging processes may disappear altogether."
}
@article{JoAnn199290,
title = "USA report: ‘Buckyballs’ and superconducting: The state of play",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "90 - 92",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90039-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900394",
author = "Jo Ann and McDonald"
}
@article{Marten199293,
title = "Patent survey on semiconductors",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "93 - 96",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90040-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900408",
author = "Marten and Terpstra"
}
@article{Chenming199297,
title = "The Berkeley reliability simulator BERT: an IC reliability simulator",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "97 - 102",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90041-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929290041X",
author = "Chenming and Hu",
abstract = "BERT (Berkeley reliability simulator) is a CAD tool developed for the purpose of design for reliability. This paper describes its intended application, the physical models and approaches used to simulate the hot electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation."
}
@article{Kiaei1992103,
title = "Low-noise logic for mixed-mode VLSI circuits",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "103 - 114",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90042-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929290042Y",
author = "Sayfe Kiaei and David J. Allstot",
abstract = "Folded source-coupled (FSCL) and current-steering logic (CSL) techniques have been developed to complement static logic for application in high-precision, high-speed, mixed analog/digital CMOS integrated circuits. In contrasts to the full-supply voltage swing (ΔVL = VDD) characteristic of conventional CMOS logic, a significantly smaller swing (ΔVL ≈ 0·2VDD) is developed in both FSCL and CSL by manipulating a constant current drawn from the VDD supply. Consequently, the measured power supply switching noise current spikes are less than 15 μA, a reduction of nearly two orders of magnitude compared with static logic. This feature allows higher performance to be realized from on-chip analog circuitry in mixed-mode applications using FSCL or CSL. Several synthesis techniques for FSCL gates are presented along with experimental results from FSCL and CSL prototypes integrated in a 2 μm p-well CMOS technology. The measured propagation delays of FSCL and CSL inverters are 700 ps and 400 ps, respectively, with corresponding power-delay products of 1·0 pJ and 0·4 pJ."
}
@article{Trainis1992115,
title = "iHARP: a multiple instruction processor chip incorporating RISC and VLIW design features",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "115 - 119",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90043-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929290043Z",
author = "S.A. Trainis and P.A. Findlay and G.B. Steven and R.G. Adams and D. McHale",
abstract = "RISC (Reduced Instruction Set Computers) processors have established an impressive performance standard by executing one instruction in each processor cycle. More recently, VLIW (Very Long Instruction Word) and superscalar architectures have attempted to improve processor performance by fetching and dispatching multiple instructions in each cycle.
This paper presents the Hatfield Advanced RISC Processor (iHARP). iHARP is a parallel pipelined reduced instructions set processor that is currently under development at Hatfield Polytechnic. Earlier work at Hatfield centred around the design of an abstract HARP architectural model [1]. iHARP is a physical realisation of the HARP architectural model within the constraints of a single VLSI chip. The major aim of the HARP project is to develop a VLIW RISC processor capable of executing more than one instruction per clock cycle."
}
@article{Radenković1992121,
title = "A knowledge-based layout compaction procedure",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "121 - 132",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90044-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900442",
author = "Z. Radenković and T. Radenković and S. Stojilković and V.B. Litovski",
abstract = "The zone-refining algorithm, being effective and convenient for further application, was chosen in our development of a knowledge-based procedure for layout compaction. Some ideas about the data structure are explained and implemented in our computer program. The procedure for layout compaction proposed in the following text consists of two parts: the Z-R part and the knowledge-based part. Both parts are implemented in each box movement. The improvement obtained may be stated as a lower area for equal numbers of iterations, or a lower number of iterations for a solution of similar area."
}
@article{Prudenziati1992133,
title = "The state of the art in thick-film sensors",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "133 - 141",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90045-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900453",
author = "Maria Prudenziati and Bruno Morten",
abstract = "The speed of evolution of thick-film technology as an advanced technique for solid state sensors is illustrated. Recent innovations are mentioned with regard to modern techniques for the design, realisation and test of hybrid circuits for signal processing, use of new materials both for substrates and transducing elements, new concept designs and processing techniques. Current research activities and programmes, which promise new interesting materials for, and emerging applications of, thick-film sensors, are described. However, several problems remain unsolved; some topics which should improve our understanding and performance of thick-film sensors are mentioned."
}
@article{SL1992143,
title = "VLSI circuits and systems in silicon: A. Brown McGraw-Hill, Maidenhead, UK, 1991, 665 pp., £49.95",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "143 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90046-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900464",
author = "S.L. and Hurst"
}
@article{JE1992143,
title = "Mechatronics: D.A. Bradley, D. Dawson, N.C. Burd and A.J. Loader Chapman and Hall, London, 1991, 510 pp., £35.00",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "143 - 144",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90047-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900475",
author = "J.E. and Brignell"
}
@article{W1992144,
title = "Parallel processing on VLSI arrays: J.A. Nossek Kluwer Academic Publishers, Norwell, MA, 1991, 140 pp. US $65.00, £43.25, Dfl. 140.00",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "144 - 145",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90048-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900486",
author = "W. and Luk"
}
@article{MS1992145,
title = "ASIC OUTLOOK 1992: An application specific IC report and directory: Integrated circuit engineering corporation (ICE) Scottsdale, AZ, USA, and International Planning Information, Taastrup, Denmark, 1991, 280 pp., US $505",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "145 - 146",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90049-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900497",
author = "M.S. and Harris"
}
@article{T1992146,
title = "Design and technology of integrated circuits: D. de Cogan John Wiley, New York, 1990, 229 pp., £14.95",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "146 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90050-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929290050B",
author = "T. and McCarthy"
}
@article{Jed1992147,
title = "Advanced printed circuit board",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "147 - 152",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90051-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900512",
author = "Jed and McCall"
}
@article{tagkey1992153,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "23",
number = "2",
pages = "153 - 154",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90052-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269292900523",
key = "tagkey1992153"
}
@article{tagkey1992ii,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "ii - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90086-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929290086G",
key = "tagkey1992ii"
}
@article{Terry19921,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "1 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90087-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929290087H",
author = "Terry and Ernest-Jones"
}
@article{tagkey19922,
title = "Japanese news round-up: Comline international news service, Tokyo",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "2 - 4",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90088-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929290088I",
key = "tagkey19922"
}
@article{Roy19925,
title = "Gallium arsenide cries wolf",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "5 - 7",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90089-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929290089J",
author = "Roy and Szweda"
}
@article{JoAnn19928,
title = "USA report: Vitesse semiconductor",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "8 - 10",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90090-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929290090N",
author = "Jo Ann and MacDonald"
}
@article{Marten199211,
title = "Patent survey on semiconductors",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "11 - 15",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90091-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929290091E",
author = "Marten and Terpstra"
}
@article{Vital199217,
title = "Programmable quasi-passive algorithmic digital- analogue converter",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "17 - 27",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90092-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929290092F",
author = "J.C. Vital and J.E. Franca",
abstract = "A digital-to-analogue converter circuit is presented which employs a quasi-passive, parasitic-compensated, switched- capacitor circuit to implement a conversion algorithm consisting of a charge division between equal-valued capacitors. Both the conversion speed and resolution can be programmed by digital means to suit a wide variety of low-cost applications with conversion rates up into the megahertz range. The analogue portion of the converter has been integrated using a 2·5 μm CMOS double-poly technology and occupies a mere 0·25 mm2. The results of the experimental evaluation of some sample prototype chips are presented and analysed."
}
@article{Senthinathan199229,
title = "Noise immunity characteristics of CMOS receivers and effects of skewing/damping CMOS output driver switching waveform on the ‘simultaneous’ switching noise",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "29 - 36",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90093-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929290093G",
author = "R. Senthinathan and J.L. Prince and S. Nimmagadda",
abstract = "A detailed study of the characteristics of CMOS receiver noise immunity and the effects of skewing CMOS output drivers on simultaneous switching noise was performed. Closed-form equations are given to calculate the simultaneous switching noise and the number of VDD/VSS bond pads-packagem pins in multichip modules. Guidelines for grouping and optimal skewing of CMOS output drivers to reduce the total effective power/ground noise are discussed. Performance trade-offs in using an additional damping resistor in the output driver circuit to reduce power/ground noise were analyzed. Design curves are given to minimize the ‘effective’ switching noise without much trade-off in output driver speed."
}
@article{Othman199237,
title = "The design of second-order bit sliced infinite impulse response digital filter chips using CIRCAD II",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "37 - 44",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90094-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929290094H",
author = "Masuri Othman and Zainul Abidin Mohd. Shariff and Mohamad Zakaria",
abstract = "A digit slicing technique was proposed to speed up the computation of important parameters in digital signal processing. In this paper we describe the use of a technique to produce fast second-order digit sliced IIR digital filter chips. The silicon chip is produced by using an IC design package called CIRCAD II. The digit slicing technique has been described in detail by Z. A. Shariff. The technique involves slicing up either filter coefficients or input data or both into smaller blocks of data with a certain bit width. These smaller blocks, also known as sub-blocks are processed in parallel by the process unit within the sub-blocks, thus speeding up the processing time. A sub-block with a processing unit is also known as a digit convolution module. In our design we sliced both the 16-bit coefficients and the 16-bit input data. Because of the slicing technique, the IC realization of the filter can be done in modular form which thus makes it easy for chip implementation."
}
@article{Pavan199245,
title = "A study of ESD- induced defects in high-voltage nMOS and pMOS transistors",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "45 - 50",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90095-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929290095I",
author = "Paolo Pavan and Enrico Zanoni and Bruno Bonati and Sergio Martion and Giovanna Dalla Libera",
abstract = "The optical beam induced current (OBIC) technique in a scanning laser microscope enables gate oxide shorts in MOS transistors to be detected and localized, and confirms results of electrical measurements performed on failed devices. The technique is completely non-destructive and can be applied to a large number of MOS gate oxide failures due to breakdown phenomena."
}
@article{Petković199251,
title = "Polycrystalline silicon thin-film resistors with irreversible resistance transition",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "51 - 58",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90096-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929290096J",
author = "D.M. Petković and N.D. Stojadinović",
abstract = "An irreversible resistance transition has been investigated in a LPCVD polycrystalline silicon thin-film resistor. Under large voltage bias, the resistor can be switched to a ‘short’ state having resistance reduction by a factor of 100. On the basis of experimental results it is shown that maximum power, at the point of irreversible change, has a major influence on the resistance after the change. It is also shown that the ratio of resistance before and after transition increases as doping concentration and film thickness decrease. Experimental results are reported, which show the doping concentration and film thickness influence on the transition voltage and current."
}
@article{Gal199259,
title = "Comparative study of submicron BiCMOS technologies",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "59 - 74",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90097-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929290097K",
author = "Laszlo Gal and C. Prunty and R. Kumar",
abstract = "The technology trade-offs of various BiCMOS technologies of submicron feature size are analyzed: performance, density, cost and reliability are investigated over a wide range of the BiCMOS process spectrum. Owing to its dominant use as a building block in high-performance processor chips, the 4:1 multiplexer (Mux) is employed as the vehicle for chip-level scaling comparisons. Numerical simulations, as opposed to analytical expressions, are employed in the determination of the Mux performance. At present even for the most complex BiCMOS processes, performance advantage over CMOS is only 25–60%. Results show that, as the feature sizes approach the half-micron level, the speed advantage of the regular BiCMOS circuits over CMOS diminishes owing to the decreased drive strength of the bipolar transistor. It is predicted that future high- performance digital circuits will be designed with a mixture of ECL and CMOS logic gates while memory cells will be largely BiCMOS. The projected cost of manufacturing high-end BiCMOS die, which support these high performance ECL circuits while offering CMOS on the same die, is 3× – 5× higher than that of a comparable straight CMOS process. In addition it is shown that the ≈ 4× overall speed advantage of high power ECL circuits over CMOS at the 1 micron level will persist down to 0·25 μm feature sizes."
}
@article{Andreas199275,
title = "The impact of the interconnect delays on a high performance ASIC array",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "75 - 78",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90098-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929290098L",
author = "Andreas and Wild",
abstract = "The importance of the interconnect delays in modern ICs increases since they do not scale proportionally with device delays. This paper presents the main aspects of the ASIC design and development which are influenced by the shift in the time budget of an ASIC due to the metal-delays weight, using a high performance array in a 0.6 μm BiCMOS process as an example."
}
@article{SL199279,
title = "FPGAs: W. Moore and W. Luk (Editors), EE and CS Books, Abingdon, UK, 1991, 455 pp., £29.95, US $59.95",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "79 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90099-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929290099M",
author = "S.L. and Hurst"
}
@article{SL199279,
title = "MINNIE and HSPICE for analogue circuit simulation,: D.C. Barker, Chapman and Hall, London, 1991, 200 pp., £14.95",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "79 - 80",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90100-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929290100F",
author = "S.L. and Hurst"
}
@article{PR199280,
title = "Mathematical models in electrical circuits: Theory and applications: C.A. Marinov & P. Neittaanmaki, Kluwer Academic Publishers, Norwell, MA, 1991, 160 pp.,£40.00, US$65.50, Dfl. 120.00",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "80 - 81",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90101-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269292901016",
author = "P.R. and Shepherd"
}
@article{PSA199281,
title = "Testing and diagnosis of analog circuits and systems: R-W Liu, (Editor) Van Nostrand Reinhold, NY, 1991, 284 pp., $54.95",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "81 - 82",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90102-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269292901027",
author = "P.S.A. and Evans"
}
@article{RJ199282,
title = "Designer's guide to testable ASIC devices: W. Needham Van Nostrand Reinhold, New York, 1991, 284 pp., £36.50",
journal = "Microelectronics Journal",
volume = "23",
number = "1",
pages = "82 - ",
year = "1992",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(92)90103-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269292901038",
author = "R.J. and Mack"
}
@article{JohnB19914,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "4 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90008-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929190008B",
author = "John B. and Butcher"
}
@article{Martin19915,
title = "Transient analysis of charge transport in the nitride of MNOS devices under Fowler-Nordheim injection conditions",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "5 - 17",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90009-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929190009C",
author = "F. Martin and X. Aymerich",
abstract = "The transient behavior of current density distributions in the nitride of MNOS devices subjected to constant current stress has been studied via numerical calculation and on the basis of Arnett's trapping model. We have found that under low injection conditions the current distributions can be well described by two parameters which have an easy physical interpretation and the time evolution of which is directly related to the characteristics of the capture centers. A new method to obtain the trapping parameters, based on the measure of the transient of current at the anode of samples with different nitride thickness, is proposed."
}
@article{Dange199119,
title = "New applications of low temperature PECVD silicon nitride films for microelectronic device fabrication",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "19 - 26",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90010-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929190010K",
author = "M.D. Dange and J.Y. Lee and K. Sooriakumar",
abstract = "Silicon nitride has been widely used in microelectronic device fabrication processes for encapsulation, surface passivation and isolation. In this paper we report new applications of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films that can be deposited at a temperature lower than the soft bake temperature of normal photoresists. Lift-off of the silicon nitride film was carried out using standard positive photoresist. GaAs MESFETs and InP MISFETs with self-aligned gates were successfully fabricated using this lift-off process of low temperature PECVD silicon nitride."
}
@article{Dimitrov199127,
title = "Trap density of silicon chlorine oxides",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "27 - 32",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90011-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929190011B",
author = "D. Dimitrov and J. Kassabov and J. Halianov and T. Dimitrova",
abstract = "By measuring the ramp voltage I–V characteristics, we obtained the oxide trap density and capture cross-section for (O2 + HCl) dry oxidized samples in the temperature range 900–1100°C. It was found that the oxide trap density increases with an increase in the oxidation temperature. The activation energy of oxide trap incorporation is of the order of 4 eV. The capture cross-section determined for the oxide traps is of the order of 10−14 cm2."
}
@article{Needs199133,
title = "Modelling the sidewall masked oxidation process using the boundary element method",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "33 - 46",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90012-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929190012C",
author = "M.J. Needs and K. Board and C. Taylor",
abstract = "The two-dimensional thermal oxidation of silicon at moderate furnace temperatures has been modelled using a boundary element based algorithm, and an efficient computer code has been developed that provides a good representation of this complex moving boundary problem. The model is applied here to the optimisation of the sidewall masked isolation process, a technique that reduces the intrusion of the oxide beneath the nitride masking film and improves the packing density of the integrated circuits on the silicon wafer."
}
@article{Ranade199147,
title = "Semi-insulating polysilicon heterojunctions on silicon",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "47 - 58",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90013-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929190013D",
author = "R.M. Ranade and S.S. Ang and W.D. Brown and H.A. Naseem and J.R. Yeargan and R.K. Ulrich",
abstract = "The electrical characteristics of undoped semi-insulating polysilicon (SIPOS)/p-type crystalline silicon (p-Si) and N+-SIPOS/p-Si heterojunctions were investigated. The current-voltage characteristics of the undoped SIPOS/p-Si heterojunctions depart from a hyperbolic sine behavior as the refractive index of the SIPOS increases. Carrier conduction in the undoped heterojunctions is characterized by low- and high-temperature barrier heights, which also vary with refractive index. Current-voltage characteristics of the n+-SIPOS/p-Si structures were rectifying with a cut-in voltage of about 1 V, which decreased with increasing temperature. Increasing the SIPOS doping increased the current density for a given bias and reduced the cut-in voltage. The forward characteristic displayed both a low and a high field activation energy with the difference attributable to the presence of interface states at the junction. Consequently, carrier conduction in these doped and undoped SIPOS/p-Si heterojunctions appears to be controlled by the SIPOS/p-Si interface. However, hydrogen annealing passivates the interface states thereby altering the low field conduction region."
}
@article{Karafyllidis199159,
title = "Prediction of band discontinuities in semiconductor heterojunctions: A simple model",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "59 - 65",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90014-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929190014E",
author = "Yiannis Karafyllidis and Paul Hagouel and Epaminondas Kriezis",
abstract = "A simple model for the prediction of heterojunction valence band discontinuities is proposed in this paper. Only two properties of semiconductors are used in this model, namely the lattice constant and the energy gap."
}
@article{Dutta199167,
title = "The effects of implantation dose and anneal temperature on the layered structure and electrical properties of oxygen-ion-implanted silicon-on-insulator",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "67 - 76",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90015-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929190015F",
author = "Pradip K. Dutta and Sorin Cristoloveanu",
abstract = "The implantation dose and the anneal temperature are two crucial parameters in the formation mechanism of silicon-on-insulator by oxygen-ion-implantation, SIMOX. The effects of these parameters on the multilayer structure of SIMOX have been nondestructively evaluated using spectroscopic and multiple-angle ellipsometry. These observations show strong correlation with data obtained by selective etching and single-mode ellipsometry. Electrical results are reported on the activation of oxygen-induced thermal donors and new donors."
}
@article{Vitanov199177,
title = "Direct capacitance measurements of small geometry MOS transistors",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "77 - 89",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90016-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929190016G",
author = "P. Vitanov and T. Dimitrova and I. Eisele",
abstract = "Methods for measuring the intrinsic capacitances of small geometry MOS transistors are described. The influence of short- and narrow-channel effects on the capacitance characteristics of MOS transistors is evaluated. The results are compared with long-channel devices. It is shown that the presented capacitance methods can be used to study the physics of short-channel transistors."
}
@article{Gupta199191,
title = "Optimization of interconnect thickness for minimum propagation delays in VLSI",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "91 - 96",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90017-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929190017H",
author = "Shobha Gupta and O.P. Wadhawan",
abstract = "Simple analytical formulation has been used to compute the optimum thickness of a set of interconnect materials having different resistivities for obtaining minimum propagation delay in small scale VLSI. The analytical formulae incorporate two- and three-dimensional fringing effects on resistance and capacitance calculation of long interconnecting lines in complex circuits. Variations of different parameters have been plotted for 0.5 λ and 0.1 λ design rules."
}
@article{Karafyllidis199197,
title = "Simulation of multiple etch fronts",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "97 - 104",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90018-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929190018I",
author = "Yiannis Karafyllidis and Paul Hagouel",
abstract = "We developed a series of algorithms, based on the string model, that simulate the inhomogeneous etching process of polymeric materials, which exhibit swelling during dissolution by an organic solvent, used in IC process fabrication. The swelling creates a gel layer between the solid (polymer) and the liquid (solvent) phases. Usually, simulations based on the string development model assume an abrupt solid-liquid interface. Our algorithms are capable of simulating two interrelated etch fronts, and may easily be extended to simulate n interrelated etch fronts. The speed with which the points of the gel-solid boundary advance depends on the distance of each point from the gel-liquid boundary. Considering the two boundaries as plane curves, one must deal with the problem of what we define as the “distance” of every point of the first curve from the second. The algorithm developed can deal with any pair of non-intersecting curves in two dimensions. Two pairs of curves were used to test the algorithm: the first with curves of a simple form, and the second with curves of a complicated form. Next we simulated the development process of an e-beam resist that exhibits swelling. The results were perfect for the minimum distance subalgorithm, and they predicted a longer development time for the e-beam resist compared with that required for a non-swelling resist."
}
@article{Diwan1991105,
title = "On the development of chip-net",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "105 - 120",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90019-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929190019J",
author = "Parag Diwan and Rakesh Kumar",
abstract = "As is well-known, semiconductor manufacturing is a technology-intensive operation carried out in an ultraclean dust-free environment. Such an environment can be best maintained by minimizing human intervention. Thus, the key for high yields and defect-free reliable microchips seems to be automation. Behind any automation project is an efficient and reliable computer network. In this paper, an overview of semiconductor manufacturing environment is presented so as to provide an insight into dataflow direction and requirements. Details of CIM/CAD/CAM requirements of semiconductor operations in terms of software and hardware are then elaborated upon. Next, a blueprint for a proposed company-wide network is detailed in terms of network topology transmission media, network access methods and communication protocols. The paper concludes with comments on specific benefits obtained from such a network, and possible future enhancements such as satellite links."
}
@article{tagkey1991121,
title = "Author index to vol. 22",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "121 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90020-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929190020N",
key = "tagkey1991121"
}
@article{tagkey1991122,
title = "Subject index to vol. 22",
journal = "Microelectronics Journal",
volume = "22",
number = "7–8",
pages = "122 - 125",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90021-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929190021E",
key = "tagkey1991122"
}
@article{tagkey19914,
title = "Publisher's note",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "4 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90026-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929190026J",
key = "tagkey19914"
}
@article{JohnB19916,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "6 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90045-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929190045O",
author = "John B. and Butcher"
}
@article{Navabi19917,
title = "Synthesis of VLSI circuits from behavioral descriptions",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "7 - 13",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90046-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929190046P",
author = "Zainalabedin Navabi and John Spillane",
abstract = "A behavioral subset of VHSIC Hardware Description Language (VHDL) is introduced. This description style is synthesizable to VLSI circuits, and it is at a convenient level of abstraction for hardware designers. The subset is presented in the form of a template, and for its constructs corresponding hardware is defined."
}
@article{Sharrif199115,
title = "Design of a VLSI digit slicing Fast Fourier Transform processor",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "15 - 26",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90047-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929190047Q",
author = "Zainul Abidin Md Sharrif and Masuri Othman and Tan Shao Theong",
abstract = "The discrete Fourier Transform plays an important role in analysis, design and the implementation of digital signal processing algorithms and systems. Currently, there are many existing efficient algorithms for computing the discrete Fourier transform which in time with advances in the VLSI technology has benefited many researchers. In this paper we discuss the implementation of a prototype FFT chip based on the proposed Digit Slicing Architecture [1]. The paper begins with a brief discussion of the digit slicing technique. Discussion on the basic building blocks of the Digit Slicing FFT, implementation of a prototype Digit Slicing FFT on a VLSI CAD package environment (CIRCAD II) then follows. The paper is concluded by a brief discussion on the speed of conversion, flexibility and practicability of the design compared to a general DSP processor."
}
@article{Masami199127,
title = "Active-RC all-pass and notch filters using a single current conveyor",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "27 - 34",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90048-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929190048R",
author = "Masami and Higashimura",
abstract = "Two generalised circuit configurations for realising second-order all-pass and notch filters using a single current conveyor (CC II) are proposed. The circuits offer high input impedances, which permit the use of circuits in cascade without requiring any impedance matching device. The active sensitivities of Q and ω0 for all-pass and notch transfer functions are low. By tuning a resistor, the networks can also realise notch filters. As an example, an all-pass filter is given with an experimental result."
}
@article{Higashimura199135,
title = "Synthesis of current-mode transfer functions using a single current conveyor",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "35 - 46",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90049-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929190049S",
author = "Masami Higashimura and Yutaka Fukui and Masaru Ishida",
abstract = "This paper proposes three circuit configurations for the synthesis of current-mode transfer functions using a current conveyor and four or six passive elements. The circuits have low active/passive sensitivities and very high output impedances which are suitable for current sources, and passive element values in the circuits can be chosen so as to be suitable for integrated circuit implementation. The measured frequency responses of the various types of transfer functions (TF), such as a lowpass TF, a highpass TF, a bandpass TF, a bandstop TF and an allpass TF, are shown, and the experimental results agree well with the theoretical characteristics."
}
@article{Ganesh199147,
title = "A technique for improving frequency response of MOS OTAs",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "47 - 55",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90050-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929190050W",
author = "Ganesh and Kothapalli",
abstract = "Incorporating a feedback loop in the input stage of an OTA can improve the frequency response. The feedback loop elements are inexpensive to integrate since no capacitors or resistors are involved. The feedback loop consists of a common source amplifier driving a diode-connected transistor. This arrangement introduces pole-zero pairs in the frequency response. While retaining a dominant pole, the feedback effectively makes the additional poles insignificant. As a result of introducing zeros into the response, the bandwidth of the amplifier is enhanced. The desired amount of feedback can be established by scaling the transistor geometries involved."
}
@article{Filho199157,
title = "Linearization of polynomial functions in dual-slope analog to digital converters using switched-capacitor circuits",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "57 - 63",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90051-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929190051N",
author = "Oséas Valente de Avilez Filho and JoséAntonio Siqueira Dias",
abstract = "A novel technique for linearizing polynomial functions using a conventional A/D converter and a simple switched-capacitor circuit is presented. By applying a time-variant voltage in the reference input of the converter it is possible to convert an analog signal f(X) into a digital signal X, if f(X) is a polynomial function. A deviation of less than 1.5% from the theoretical values was measured in a circuit designed to linearize a 3rd-degree polynomial function with a non-linearity of about 25%. The inherent clock immunity of the dual-slope A/D converter is preserved."
}
@article{Akkouche199165,
title = "Design of a high performance CMOS adder for both a high performance array and an accumulator",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "65 - 73",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90052-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929190052O",
author = "A. Akkouche and K. Oudjida",
abstract = "This paper describes the design of a high performance static adder in CMOS pass logic. The adder we present is not only the fastest CMOS adder, in comparison with other published results using the same model and process parameters, but it is also the most area efficient. An attempt to design a high performance parallel adder by exploiting the failures of the designed adder is discussed."
}
@article{Z199175,
title = "Novel CMOS inverter with linearly adjustable threshold voltage using only three MOS transistors",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "75 - 79",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90053-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929190053P",
author = "Z. and Wang",
abstract = "The standard CMOS inverter has a fixed threshold voltage, determined by the K ratio of the two types of MOS transistor. The inclusion of a single MOS transistor enables us to adjust the threshold voltage linearly by a DC voltage. The new circuit is analysed and the threshold voltage of the proposed CMOS inverter can be linearly adjusted in the range of 1.6-4 V at a 5 V supply voltage."
}
@article{Zhenhua199181,
title = "A current-mode square-rooter in CMOS technology",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "81 - 84",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90054-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929190054Q",
author = "Zhenhua and Wang",
abstract = "This paper presents a new current-mode square-rooter which is implemented with a squarer and a dual-output operational transconductance amplifier (OTA). The circuit is offset-free and independent of either the process or the transistor parameters. Simulation results show very high accuracy. The proposed circuit can also be extended to a two-quadrant analog multiplier."
}
@article{Zhenhua199185,
title = "Fully adjustable CMOS current window comparator",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "85 - 88",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90055-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929190055R",
author = "Zhenhua and Wang",
abstract = "CMOS current window comparators are described whose window is independent of process parameters, transistor dimensions, temperature variations and supply voltages. Two configurations of the realization with inverted output are presented. The window of the circuits is determined merely by two currents, and is adjustable over the range of the input current. Simulation results show no change of the window for a wide range of temperature variations from −50°C to +150°C and a very good frequency response."
}
@article{MuhammadTaher199189,
title = "Improved analysis of the nonlinear distortion performance of an N-level analog multiplier",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "89 - 100",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90056-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929190056S",
author = "Muhammad Taher and Abuelma'Atti",
abstract = "This paper discusses the nonlinear distortion performance of an N-port analog multiplier under large signal conditions. Analytical expressions are obtained for the output up- and down-converted frequencies and spurious frequencies in terms of the Bessel functions. Under small signal conditions, often encountered, the spectrum computation requires only simple hand computations."
}
@article{SM1991101,
title = "Hardware realization of wave-digital filters",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "101 - 108",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90057-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929190057T",
author = "S.M. and Bozic",
abstract = "The theory, design and implementation of the wave-digital filters (WDF), as presented in this paper, are the result of a study in developing a hardware realization of a third-order filter. The interconnecting sections (adaptors) in WDFs are of great interest for their realizations in microcircuit form. The analytical techniques developed in this work can easily be extended to higher order filters. The software implementation suitable for the WDF has also been briefly considered."
}
@article{D1991109,
title = "The UK IT industry — has it got a future?",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "109 - 123",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90058-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929190058U",
author = "D. and Clark",
abstract = "Although there have been many articles about different aspects of IT, little has been written on the core business of the industry, which has been defined by the government as a combination of both computing and telecommunications manufacturers. Generalization has been the order of the day, with little attention paid to the interaction of the two industries and the climate in which they now operate. Further study shows another opportunity that will be, if it has not already been, lost."
}
@article{Gwilym1991124,
title = "International parliamentary report",
journal = "Microelectronics Journal",
volume = "22",
number = "5–6",
pages = "124 - 128",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90059-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929190059V",
author = "Gwilym and Roberts"
}
@article{JohnB19913,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "3 - 4",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90001-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269291900014",
author = "John B. and Butcher"
}
@article{Avaritsiotis19915,
title = "Automatic resistor-generation and thick film circuit layout using the Magic layout editor",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "5 - 14",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90002-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269291900025",
author = "J.N. Avaritsiotis and G. Stamoulis and S.A. Achtidas",
abstract = "A technology file for the Magic layout editor has been developed to show the possibility of a design route which uses a CAD package not intended for hybrids, and as such it is considered to be a low cost approach to thick film CAD. Layout with design rule checking of multilayer hybrid circuits may be performed, consisting of two (or more) different metallization patterns with the possibility of using up to eight different resistor pastes, dielectrics, protective coating and solder paste. The thick film technology described is not meant to be indicative of good industrial practice, since the intention is to show how the technology file may be altered. The alterations performed provide for automatic resistor generation, device placement and automatic routing techniques in thick film circuits. Also, in single-layer technology, dielectric tiles are automatically created at metal crossings when an electric contact is not desired."
}
@article{AsadA199115,
title = "A transistor fault model for nMOS combinational circuits",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "15 - 26",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90003-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269291900036",
author = "Asad A. and Ismaeel",
abstract = "A new fault model that incorporates both logic and circuit level description is presented. The model, called Logic Transistor Function (LTF), is developed to represent nMOS combinational circuits. The LTF uncovers extensive information about the structure of the circuit, and is utilized to specify the output of the fault-free and faulty circuits with single or multiple transistor stuck faults. The LTF is effective in modelling the sequential behaviour of the faulty combinational nMOS circuit. A procedure that relies on the LTF model is introduced to detect classical and non-classical faults. The circuit is tested by first partitioning the nMOS circuit and then obtaining the primitive D-cubes of the faulty partition. A variant of the D-algorithm may be applied to accomplish detection. The procedure is systematic, thus making it attractive for programming."
}
@article{MJR199127,
title = "Notch filters based on a circular geometry R-C-NR microelectronic circuit",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "27 - 39",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90004-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269291900047",
author = "M.J.R. and Khan",
abstract = "The analysis of three sub-networks of the circular geometry R-C-NR microelectronic circuit yielding notch filter characteristics is carried out. The design curves relate the top and bottom layer resistances and the normalized notch frequencies for different ratios of external to internal diameter of the microelectronic structure under discussion. The frequency response curves are also plotted for different diameter ratios. The comparison of the notch filters is based on their steepness values noted on the frequency response curves. The curves are shifted to the same notch frequency for comparison even though they have different notch frequencies. A design example is included."
}
@article{MJR199141,
title = "Frequency characteristics and applications of an R-C-NR circular geometry microelectronic circuit",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "41 - 52",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90005-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269291900058",
author = "M.J.R. and Khan",
abstract = "This article includes the study of eleven sub-networks of the R-C-NR circular geometry microelectronic circuit. Four of the sub-networks have band pass filter characteristics, whereas the other four sub-networks result in band stop filters. The remaining three sub-networks give rise to phase compensating characteristics in which the last phase can also be utilized as a linear phase filter. The results are presented in the form of the frequency characteristics of the sub-networks."
}
@article{K199153,
title = "All-pass networks using current conveyors",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "53 - 56",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90006-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269291900069",
author = "K. and Pal",
abstract = "Two circuits, each realizing a second order all-pass transfer function, are described. One circuit uses a grounded capacitor, and is thus suitable from the point of view of IC implementation. The other circuit employs a minimum of active and passive components required for a second order all-pass realization."
}
@article{tagkey199157,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "22",
number = "4",
pages = "57 - 63",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90007-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929190007A",
key = "tagkey199157"
}
@article{JohnB19914,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "4 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90027-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929190027K",
author = "John B. and Butcher"
}
@article{Kasper19915,
title = "Molecular beam epitaxy of silicon based electronic structures",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "5 - 16",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90028-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929190028L",
author = "E. Kasper and J.F. Luy",
abstract = "A concept for future electronic material is introduced which contains silicon substrates, conventional integrated circuits and heterostructure device areas. Molecular beam epitaxy of silicon (Si-MBE) is proposed for the realization of this heterointegration concept. The advantages of Si-MBE are listed and examples of typical device types are given. The examples include 100 GHz discrete two-terminal devices (IMPATT), silicon millimetre-wave integrated circuits (SIMMWIC) and SiGe base heterojunction bipolar transistors (HBT). The preparation of ultrathin Si/Ge strained layer superlattices (SLS), their prospects for optoelectronic applications and the observation of SLS-induced photoluminescence are discussed."
}
@article{RK199117,
title = "Study of defects in thermal SiO2 grown in the presence of 1,1,1-trichloroethane by Wright etchant",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "17 - 29",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90029-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929190029M",
author = "R.K. and Bhan",
abstract = "Defects in thermal SiO2 grown in the presence of 1,1,1-trichloroethane (TCA) have been studied by using Wright etchant on <100> oriented p- and n-type silicon. Results are compared with trichloroethylene (TCE) oxides grown under identical conditions to assess the feasibility of substituting TCA for TCE. It is found that in general the size of both dislocations and oxidation-induced stacking faults (OISFs) in TCA oxides is smaller than in TCE oxides grown under identical conditions. In addition, the basic shape of dislocations is the same in TCA or TCE source and on the concentration of TCA or TCE. The length of OISF decreases with the increase in molar concentration of TCA or TCE."
}
@article{Singh199131,
title = "Thermal effects on silicides of titanium, cobalt and nickel in device structures",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "31 - 45",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90030-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929190030Q",
author = "Awatar Singh and Mulayam Singh and W.S. Khokle and K.C. Nagpal",
abstract = "This paper presents the results of our study on the thermal effects on silicides of titanium, cobalt and nickel in device structures. The silicides at source, drain, gate and interconnect levels were formed by a two-step annealing process in vacuum and in N2 ambients. Both the standard and the layered configurations were used. The TiSi2 at G and l levels was found to be not as fine grained as that at S and D levels. In the standard configuration, this silicide was stable up to 850°C in vacuum and 950°C in N2. The layered configuration increased the thermal stability of the silicide up to 950°C in vacuum. Higher temperatures (900°C or greater for standard and greater than 950°C for layered configurations) in vacuum resulted in the development of voids, notches and hillocks in the silicide film. Similar behaviour was also shown by CoSi2 and NiSi2 when annealed beyond 850°C in vacuum and N2 ambients. This finding is attributed to the diffusion of silicon from polysilicon and its recrystallization into large grains. This is discussed with the help of schematic diagrams of thermal degradation of TiSi2 as visualized from scanning electron microscopy studies."
}
@article{Ahmad199147,
title = "Improved design of planar terminated junctions in the presence of high oxide charge densities",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "47 - 52",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90031-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929190031H",
author = "S. Ahmad and J. Akhtar",
abstract = "Planar terminated junctions are found to give rise to near-ideal breakdown characteristics. The presence of surface oxide charges has been found to reduce breakdown voltage. Near-ideal breakdown characteristics have been arrived at, in the case of planar terminated junctions, even in the presence of relatively high surface oxide charge densitities. By varying surface oxide charge densities between zero and 1012 cm−2, a systematic study of the influence of Qss on the breakdown voltage of planar terminated junction has been carried out. For a given value of Qss, the kind of terminating junction resulting in near-ideal breakdown, has been determined. These results are summarized for the realistic design of planar terminated junctions."
}
@article{Chanana199153,
title = "Effect of different surfaces on plasma stripping of photoresist",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "53 - 57",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90032-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929190032I",
author = "R.K. Chanana and R. Dwivedi and S.K. Srivastava",
abstract = "The effect of different surfaces on plasma ashing is studied. For this purpose three different surfaces are considered-silicon, SiO2 and metallized aluminium. Photoresist is spun, exposed and developed on these surfaces and plasma ashing is performed. The ashing time with respect to spinner speed and flow rate of O2 is determined. The results reveal that the ashing time of the resist is dependent on the background layer on which the resist is coated."
}
@article{KEG199159,
title = "A scientific guide to surface mount technology",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "59 - 60",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90033-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929190033J",
author = "K.E.G. and Pitt"
}
@article{tagkey199161,
title = "Research and development (vol. 22 no. 3)",
journal = "Microelectronics Journal",
volume = "22",
number = "3",
pages = "61 - 64",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90034-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929190034K",
key = "tagkey199161"
}
@article{JohnB19912,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "22",
number = "2",
pages = "2 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90022-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929190022F",
author = "John B. and Butcher"
}
@article{Harrison19913,
title = "Ultra-thin dielectrics for semiconductor applications— growth and characteristics",
journal = "Microelectronics Journal",
volume = "22",
number = "2",
pages = "3 - 38",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90023-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929190023G",
author = "H.B. Harrison and S. Dimitrijev",
abstract = "As the physical dimensions of integrated circuit devices decrease the resultant dielectric thickness also decreases. However with this reduction in thickness particularly in the sub-15 nm region there are a number of undesirable physical and electrical effects associated with conventional silicon dioxide films. This paper considers the growth kinetics and resultant characteristics of such thin oxides as well as possible replacements by way of oxynitrides or nitrides. A comparison is made of each type of dielectric and their applicability to future semiconductor processing."
}
@article{FS199139,
title = "Potential and problems of high-temperature electronics and CMOS integrated circuits (25–250°C) - an overview",
journal = "Microelectronics Journal",
volume = "22",
number = "2",
pages = "39 - 54",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90024-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929190024H",
author = "F.S. and Shoucair",
abstract = "A brief overview of high-temperature integrated circuit technologies is presented. General comparisons of the high-temperature performance and relative merits of several semiconductor materials, technologies, devices and digital and analog circuits are highlighted. Important advances and developments of the last three decades are outlined, which reflect the prominence of MOSFET technologies. Shortcomings of the temperature models in standard IC computer-aided-design (CAD) programs are summarized and a discussion of near-and long-term research and development needs for high-temperature integrated electronics is presented."
}
@article{Łukasiak199155,
title = "A review of long-channel MOS transistor models",
journal = "Microelectronics Journal",
volume = "22",
number = "2",
pages = "55 - 88",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90025-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929190025I",
author = "L. Łukasiak and B. Majkusiak and A. Jakubowski and S. Dimitrijev and N. Stojadinović",
abstract = "Since the long-channel behaviour of MOS devices can be retained in spite of a severe reduction of the MOS transistor channel length, there are still many applications for long-channel MOS transistor models. This paper is a review of such models and its aim is to elucidate the influence of two effects: the dependence of the surface potential on the gate voltage in the strong inversion and mobility modulation along the channel due to the effective transverse electric field variation. The paper contains also a brief discussion of quantum-mechanical effects and mobility modelling."
}
@article{tagkey1991IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "IFC - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90035-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929190035L",
key = "tagkey1991IFC"
}
@article{JohnB19914,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "4 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90036-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929190036M",
author = "John B. and Butcher"
}
@article{Nedev19915,
title = "Performance limits of deep submicron N- and P-channel MOS transistors",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "5 - 17",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90037-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929190037N",
author = "I. Nedev and O. Dimov and Y. Yanakiev",
abstract = "The transconductance of deep submicron N- and P-channel MOS transistors has been theoretically and experimentally investigated. The values for saturation velocity and maximum transconductance have been derived by approximation of experimental results to zero channel length and zero gate oxide thickness. The values for N-channel MOSFETS are vs atn = 8.33 & 106cm s−1 and Gmslim (N) = 31.2 S cm−1 and those for P-channel MOSFET are vsatp = 6.06 × 106cm s−1 and Gmslim (P) = 15.4 S cm−1."
}
@article{tagkey199118,
title = "Announcement",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "18 - ",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90038-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929190038O",
key = "tagkey199118"
}
@article{MuhammadTaher199119,
title = "Modelling the static characteristic of Zener diodes for computer-aided design",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "19 - 22",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90039-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929190039P",
author = "Muhammad Taher and Abuelma'atti",
abstract = "An empirical formula is presented for the static current-voltage characteristic of the Zeper diode. The three parameters of the formula can be extracted easily from separate regions in the device characteristic using simple manual computations."
}
@article{Simeonov199123,
title = "Punchthrough limits in conventional and graded-drain MOS devices",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "23 - 29",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90040-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929190040T",
author = "D. Simeonov and E. Goranova",
abstract = "An analytical model for the estimation of the minimum channel length which ensures a long channel behaviour in the MOS transistor is presented. The two-dimensional doping of the region under the gate is taken into account in the calculations. The model can be used in the case of graded-drain devices. Some of the results obtained are compared with those published in the literature."
}
@article{Kumar199131,
title = "A survey of dual input RC notch filters",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "31 - 47",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90041-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929190041K",
author = "Umesh Kumar and Sushil Kumar Shukla",
abstract = "Serious fabrication difficulties in producing microminiaturized inductances with the required parameters have inspired considerable research effort directed towards obtaining frequency-selective characteristics by alternative means. In general the effort has been made in two main directions: attempts to discover physical phenomena in materials and devices which could be used for frequency selection; attempts to devise circuits which could perform this function using only active devices, resistors and capacitors."
}
@article{Nandi199149,
title = "A digitally programmable multifunction high-frequency wave processor/filter network",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "49 - 58",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90042-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929190042L",
author = "R. Nandi and S.K. Sanyal and U.C. Sarker",
abstract = "An active-R network configuration with multifunction high-frequency signal/wave processing capability, e.g. filtering, phase equalising, wave generation/modulation, has been described. Frequency selective characteristics at relatively higher bands have been derived by utilising the operational amplifier (OA) bandwidth. Design and test results on the digital programmability of the network parameters by incorporating microprocessor controlled switched programmable resistor arrays (PRAs) have been presented. Extension of the oscillator mode to microprocessor-controlled FSK/PSK wave modulation has also been examined."
}
@article{tagkey199159,
title = "Research and development",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "59 - 62",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90043-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929190043M",
key = "tagkey199159"
}
@article{Gwilym199163,
title = "UK parliamentary report",
journal = "Microelectronics Journal",
volume = "22",
number = "1",
pages = "63 - 64",
year = "1991",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(91)90044-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929190044N",
author = "Gwilym and Roberts"
}
@article{John19903,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "3 - 4",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90029-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900293",
author = "John and Butcher"
}
@article{Ciampolini19905,
title = "Simulation of three-dimensional effects in VLSI devices",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "5 - 12",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90030-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900307",
author = "P. Ciampolini and A. Pierantoni and A. Forghieri and G. Baccarani",
abstract = "Two dimensional (2D) modelling of electron devices is already established as an indispensable tool for VLSI design, and a number of very sophisticated 2D device simulators have been developed. The increasing miniaturization and packing density of VLSI circuits is now boosting research activity towards three-dimensional (3D) device simulation. In this paper we present some results obtained with our prototype 3D simulator. HFIELDS-3D, and discuss some topics related to the underlying philosophy and to the implementation of a vector code, which we are now exploiting on a CRAY XMP48 machine."
}
@article{Buchner199013,
title = "3D CMOS devices in recrystallized silicon",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "13 - 20",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90031-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929090031W",
author = "R. Buchner and K. Haberger and S. Seitz and J. Weber and P. Seegebrecht and W. van der Wel",
abstract = "A 2 μm scale three-dimensional CMOS process has been developed which allows the fabrication of MOS devices in two independent active device layers. NMOS transistors have been fabricated in the substrate and CMOS devices, including inverters and ring oscillators, in a thin laser-recrystallized polysilicon layer. The processing parameters were determined carefully in order to obtain a monocrystalline top layer and to avoid any damage to the underlying devices already existing."
}
@article{Charitat199021,
title = "Improvement of the ON resistance of power VDMOS devices by surface doping: effect on the breakdown voltage",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "21 - 27",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90032-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929090032X",
author = "G. Charitat and H. Tranduc and P. Granadel and P. Rossel",
abstract = "An efficient way to improve the ON resistance Ron of a vertical double-diffused MOS device is to implant a shallow, lightly doped layer over the drift area of the device. The evolution of Ron for different voltage handling capacities vs. (i) the junction depth and (ii) the concentration of this layer was studied. The figure of merit (the product of Ron and the surface area) of the device was calculated using an analytical unidimensional model and with a two-dimensional numerical simulator. The influence of this surface doping technique on the breakdown voltage of the device was investigated. Comparison between the analytical and numerical approaches shows that two-dimensional effects are important. The trade-off between the factor of merit and the breakdown voltage is emphasized and design rules to use the surface doping technique for devices with voltage handling capacities of 50, 150 and 400 V are given."
}
@article{Sinha199029,
title = "Microphotographic studies of oxide growth on semi-insulating GaAs during etching",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "29 - 32",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90033-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929090033Y",
author = "M.P. Sinha and C.S. Damle and R.C. Prasad",
abstract = "Microphotographic observations are reported of the oxidation of semi-insulating GaAs with etching solution. These observations show the formation of a void within the grown oxide layer. The variation of the void shape and size as a function of time was observed. It was also found that oxide density increased as the etching time increased."
}
@article{Titinet199033,
title = "Reliability of compound semiconductor microwave field-effect devices: failure mechanisms and test methods",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "33 - 41",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90034-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929090034Z",
author = "G.Clerico Titinet and E. Pollino and D.E. Riva",
abstract = "The outstanding development of compound semiconductor technology led to the commercial availability of GaAs MESFETs and, more recently, of MMICs and HEMTs. The most promising applications of these devices have been found in fields where high reliability is imperative, namely the military, aerospace and telecommunications area. Although MESFET failure mechanisms have been carefully investigated, many doubts are still to be removed as far as MMIC and HEMT technologies are concerned. Moreover, the design and realization of a suitable test set-up is required to safely life-test active microwave devices, due to their potential instability both during electrical characterization and life tests with bias applied and to the high temperature at which these tests are usually carried out."
}
@article{Gwilym199043,
title = "UK Parliamentary report",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "43 - 48",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90035-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900352",
author = "Gwilym and Roberts"
}
@article{tagkey199049,
title = "Research and development",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "49 - 56",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90036-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900363",
key = "tagkey199049"
}
@article{tagkey199057,
title = "Author index to vol. 21",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "57 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90037-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900374",
key = "tagkey199057"
}
@article{tagkey199058,
title = "Subject index to vol. 21",
journal = "Microelectronics Journal",
volume = "21",
number = "6",
pages = "58 - 60",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90038-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900385",
key = "tagkey199058"
}
@article{John19904,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "4 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90013-S",
url = "http://www.sciencedirect.com/science/article/pii/002626929090013S",
author = "John and Butcher"
}
@article{Kausel19905,
title = "BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "5 - 21",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90014-T",
url = "http://www.sciencedirect.com/science/article/pii/002626929090014T",
author = "W. Kausel and J.O. Nylander and G. Nanz and S. Selberherr and H. Poetzl",
abstract = "Boundary conditions using a current-dependent carrier recombination velocity distribution are developed for modelling Schottky contacts by computer-aided physical simulation. In addition, a boundary condition in the form of an arbitrary linear combination of voltage and current at the contact is presented. Thus MESFET devices with simple circuits connected to device terminals can be simulated by solving additional equations. As an example the switching behaviour of a MESFET with a drain resistor is investigated."
}
@article{Jakubowski199023,
title = "Analytical modelling of long-channel MOSFET I–V characteristics with improved accuracy",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "23 - 28",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90015-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929090015U",
author = "Andrzej Jakubowski and Bogdan Majkusiak and Lidia &Ł;ukasiak",
abstract = "Several well-known MOSFET models are compared in terms of their accuracy. A brief discussion of the simplifying assumptions used by those models leads to the conclusion that the accuracy of a model is strongly influenced by the methods used for surface potential evaluation. In this paper an analytical approximation for the surface potential vs. gate-voltage dependence is strong inversion is presented. This approximation is further applied in modelling long-channel MOSFET I–V characteristics in strong inversion. The new description achieves greater accuracy than other models based on the same drain-current formula."
}
@article{Daw199029,
title = "Modelling of epitaxial growth rate of silicon by vapour phase epitaxy",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "29 - 39",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90016-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929090016V",
author = "A.N. Daw and D.K. Pal and M.K. Kowar",
abstract = "A growth model based on chemical kinetics for vapour phase epitaxy of silicon by pyrolysis of silane (SiH4) in a horizontal rectangular reactor at atmospheric pressure has been developed. The model incorporates the dependence of growth rate on various physical and geometrical parameters such as temperature, flow rate, mole fraction, position and angle of tilt. The model has been tested against such experimental data as are available in the literature and satisfactory agreement has been observed. An interesting feature of the model is that it predicts the growth rate to be fairly independent of the position of the susceptor within the reactor when the angle of tilt is 1.5°. The model has been coded in a simple computer program."
}
@article{Karafyllidis199041,
title = "Semiconductor heterojunctions: a rigorous new model",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "41 - 56",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90017-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929090017W",
author = "Yiannis Karafyllidis and Paul Hagouel and Epaminondas Kriezis",
abstract = "A model for interpreting the experimental observations of forward current-voltage characteristics of anisotype semiconductor heterojunctions is proposed. In this model the interface states determine the carrier transport mechanism. Under forward bias, electrons tunnel from the conduction band of semiconductor 1 to an interface state. Then electrons are transported from one interface state to the other. Finally electrons tunnel from the interface states area to the conduction band of semiconductor 2. The transmission coefficient of the double non-symmetrical barrier, formed at the heterojunction interface, was obtained by the WKB approximation. The form of the interface states distribution, in terms of both energy and distance, was estimated. The model can be applied to a large number of anisotype heterojunctions. The application of the model results in useful information about the formation and behaviour of the heterojunction interface."
}
@article{tagkey199057,
title = "Research and development: (Vol. 21 No. 5)",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "57 - 63",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90018-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929090018X",
key = "tagkey199057"
}
@article{tagkey199065,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "21",
number = "5",
pages = "65 - 68",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90019-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929090019Y",
key = "tagkey199065"
}
@article{tagkey19904,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "4 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90071-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929090071A",
key = "tagkey19904"
}
@article{Zhenhua19905,
title = "Novel high-order high-pass real-rclike mos ladder filters",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "5 - 8",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90072-B",
url = "http://www.sciencedirect.com/science/article/pii/002626929090072B",
author = "Zhenhua and Wang",
abstract = "High-pass ladder filters using real-resistor-like MOS transresistors which exhibit less than 0.6% relative deviation from linearity for input over supply voltages are presented. The characteristic of the transfer function can be readily determined by Pascal's triangle. High-pass ladder filters up to order 10 are simulated and an empirical formula of cut-off frequencies is given."
}
@article{Gupta19909,
title = "A new method for the analysis and design of canonical switched capacitor circuits",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "9 - 20",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90073-C",
url = "http://www.sciencedirect.com/science/article/pii/002626929090073C",
author = "M. Gupta and S.S. Jamuar",
abstract = "A new design procedure for the canonical realization of an SC filter in the modified z domain is proposed. The method is based on the evaluation of the transfer function of the signal flow graph (SFG) with only one forward path and several feedback paths. The design procedure is carried out directly in the z domain and uses the SFG in the modified z domain for developing novel structures. The technique is illustrated by design examples."
}
@article{Kumar199021,
title = "On the importance, realisation, experimental verification and measurements of active-R and active-C filters",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "21 - 45",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90074-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929090074D",
author = "Umesh Kumar and Sushil K. Shukla",
abstract = "Active-R filters are an offshoot of active-RC filters where the internal dynamics of an operational amplifier (OA) is employed in the elimination of external capacitors with several significant advantages. Some advanced level active-R topologies are discussed from the design point of view and in terms of greater flexibility over filter parameters. A few filter circuits are designed and their performance experimentally verified. Components simulation by an OA: R method is also performed and tested. A technique for realisation of a 20 A biquad is used to generate different types of filter functions which are experimentally verified.
To overcome the difficulties of switched capacitor filters, a design method avoiding these but retaining the advantages of monolithic implementation with filter parameters set by ratios of capacitors, is used and termed active-C filters. Experimental verifications and measurements on designed active-C filters are presented."
}
@article{Kraeuter199047,
title = "Electron beam exposure of diazoquinone based resists",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "47 - 53",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90075-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929090075E",
author = "Wolfgang A. Kraeuter and Humbert M. Noll",
abstract = "The resist process parameters and the process limits for the electron beam exposure of the three optical resists MP1350, AZ5200 and S1400 and of the electron resist RE5000P are evaluated. The influence of the electron dose, the beam diameter, the resist thickness, the developer concentration and the number of exposure passes on the exposure behaviour e.g. the sensitivity, the contrast and the control of critical dimensions are discussed. An upper dose limit for single pass e-beam exposure is determined by radiation damage which has been found to occur at beam currents above 1600 nA. For 5000-Å thick resist films a lower exposure dose limit of 7 μC cm−2 is determined. At this dose about 20% of the resist is removed during development. The possibility of decreasing the required exposure dose to 3 μC cm−2 by resist thickness optimization is proposed. At doses between 8 and 12 μC cm−2 the contrast reaches a peak value of 30. The influence of this high contrast on critical dimension control is discussed in detail."
}
@article{Choudhury199055,
title = "Characterization of gaas wafers etched in the NH4OH/H2O2/H2O system",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "55 - 59",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90076-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929090076F",
author = "Debabani Choudhury and S. Mahapatra",
abstract = "The principal aim of this paper is to report a study of the etching characteristics of gallium arsenide wafers in the alkaline NH4OH/H2O2/H2O system. Image analysing system and scanning electron microscopy observations are presented, which show the dependence of the surface morphology on etching time and etchant composition ratio."
}
@article{tagkey199061,
title = "Electrical characterization of matched impedance, cofired, high-speed, microelectronic packages made from low dielectric constant, boron-doped, sol-gel silica: L.E. Sanchez, D. Ngo (McDonnell Douglas Electron. Syst. Co., Huntington Beach, CA. USA) Int. J. Hybrid Microelectron. (USA). vol. 12. no. 2, p. 95–101 (June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "61 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90077-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929090077G",
key = "tagkey199061"
}
@article{tagkey199061,
title = "A three-layer channel routing algorithm in the HVH model: Hyung Bog Yi, Ji Soo Lee, Yoo Kim Cho J. Korea Inf. Sci. Soc. (South Korea). vol. 16, no. 2. p. 105–113 (March 1989). In Korean",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "61 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90078-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929090078H",
key = "tagkey199061"
}
@article{tagkey199061,
title = "Time-efficient VLSI artwork analysis algorithms in GOALIE2: K.-W. Chiang, S. Nahar, C.-Y. Lo (AT&T Bell Lab., Murray Hill, NJ, USA) IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA). vol. 8, no. 6, p. 640–648 (June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "61 - 62",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90079-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929090079I",
key = "tagkey199061"
}
@article{tagkey199062,
title = "HARP: FORTRAN to silicon [ compilation system ]: T. Tanaka, T. Kobayashi, O. Karatsu (NTT LSI Lab., Kanagawa, Japan) IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA). vol. 8, no. 6, p. 649–660 (June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "62 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90080-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929090080M",
key = "tagkey199062"
}
@article{tagkey199062,
title = "BLADES: an artificial intelligence approach to analog circuit design: F. El-Turky (AT&T Bell Lab., Naperville, IL, USA), E.E. Perry IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA). vol. 8, no. 6, p. 680–692 (June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "62 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90081-D",
url = "http://www.sciencedirect.com/science/article/pii/002626929090081D",
key = "tagkey199062"
}
@article{tagkey199062,
title = "Movie — an interactive environment for silicon compilation tools: P. Andersson, L. Philipson (Dept. of Comput. Eng., Lund Univ., Sweden) IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA). vol. 8, no. 6, p. 693–701 (June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "62 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90082-E",
url = "http://www.sciencedirect.com/science/article/pii/002626929090082E",
key = "tagkey199062"
}
@article{tagkey199062,
title = "Layer assignment for VLSI interconnect delay minimization: M.J. Ciesielski (Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst. MA, USA IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. (USA). vol. 8, no. 6, p. 702–707 (June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "62 - 63",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90083-F",
url = "http://www.sciencedirect.com/science/article/pii/002626929090083F",
key = "tagkey199062"
}
@article{tagkey199063,
title = "Standard defined tests of complex systems. 2. The advantages of a hierarchical test: P. Fleming, B. Geisberger Electronik (West Germany), vol. 38, no. 13, p. 102–108 (23 June 1989). In German",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "63 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90084-G",
url = "http://www.sciencedirect.com/science/article/pii/002626929090084G",
key = "tagkey199063"
}
@article{tagkey199063,
title = "Analog and analog-digital arrays blossom: F. Goodenough Electron. Des. (USA), vol. 37, no. 13, p. 49–52, 54, 56 (22 June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "63 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90085-H",
url = "http://www.sciencedirect.com/science/article/pii/002626929090085H",
key = "tagkey199063"
}
@article{tagkey199063,
title = "Modeling complex devices gets easier: A. Ghere, K. Thomson (Logic Modeling Syst. Inc., Milpitas. CA, USA) Electron. Des. (USA), vol. 37, no. 13, p. 69–72 (22 June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "63 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90086-I",
url = "http://www.sciencedirect.com/science/article/pii/002626929090086I",
key = "tagkey199063"
}
@article{tagkey199063,
title = "Mixed analog-digital ASICs: R.A. Quinnell EDN (USA), vol. 34, no. 13. p. 147–156 (22 June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "63 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90087-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929090087J",
key = "tagkey199063"
}
@article{tagkey199063,
title = "The global optimization extraction of parameter for IC bipolar model: Hao Yue, Sun Qing, Jia Xin-Zhang (Northwest Telecommun. Eng. Inst., China) Acta Electron. Sin. (China). vol. 16, no. 1, p. 68–73 (Jan. 1988). In Chinese [received: 13 July 1989]",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "63 - 64",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90088-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929090088K",
key = "tagkey199063"
}
@article{tagkey199064,
title = "I Gbit/s, 32×32 high-speed space-division switching module for broadband ISDN using SST LSIs: N. Yamanaka. S. Kikuchi (NTT Commun. Switching Labs.. Tokyo. Japan), Y. Yoshioka, M. Suzuki Electron. Lett. (UK), vol. 25, no. 13, p. 831–833 (22 June 1989)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "64 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90089-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929090089L",
key = "tagkey199064"
}
@article{tagkey199064,
title = "Design and optimization of site-by-site alignment marks for a single polysilicon bipolar process: E.D. Castel, N. Shamma (Nat. Semicond. Corp., Santa Clara, CA. USA) Microelectron. Eng. (Netherlands), vol. 9, no. 1–4. p. 73–77 (May 1989). (14th International Conference on Microlithography/Microcircuit Engineering 88, Vienna, Austria, 20–22 Sept. 1988)",
journal = "Microelectronics Journal",
volume = "21",
number = "4",
pages = "64 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90090-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929090090P",
key = "tagkey199064"
}
@article{John19904,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "4 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90039-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900396",
author = "John and Butcher"
}
@article{Suehle19905,
title = "The effects of localized hot-carrier-induced charge in VLSI switching circuits",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "5 - 14",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90040-A",
url = "http://www.sciencedirect.com/science/article/pii/002626929090040A",
author = "J.S. Suehle and K.F. Galloway",
abstract = "This paper presents data collected from CMOS test circuits designed to characterize hot-carrier effects in digital switching circuits. Test circuits were configured as CMOS inverters, transmission gates, and NMOS transmission gates. The MOSFETs within the circuits could be probed so that the degradation of their dc characteristics could be directly measured. These circuits were hot-carrier-stressed under pulsed switching conditions similar to their operation in VLSI circuits. The results indicate that device degradation is strongly dependent on the circuit configuration and switching conditions. Transmission gate circuits exhibit a more severe degradation in switching characteristics than inverter circuits due to the localization of the hot-carrier-induced charge. The localized nature of hotcarrier-induced charge must be considered at the circuit simulation level to accurately assess the effect on circuit performance."
}
@article{Reczek199015,
title = "Scaling aspects for different CMOS circuit designs due to transient latch-up effects",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "15 - 23",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90041-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929090041Z",
author = "W. Reczek and F. Bonner and B. Murphy",
abstract = "The influence of three different scaling concepts: constant field (CE); constant voltage (CV); and compaction shrink (CS) on the latch-up behaviour of CMOS circuits is examined in detail for each of three circuit design methods: (1) floating well concept with substrate-bias (VBB) generator; (2) conventional LOGIC with grounded p-substrate and n-well connected to VCC; and (3) DRAM/LOGIC with VBB generator and n-well connected to VCC. Scaling results in increased power-on latch-up susceptibility for circuits with VBB generators. This risk can only be reduced by the use of protection circuits which limit the internal power supply ramp rate. Latch-up susceptibility to pulses (e.g. overshoot, undershoot and glitches) is increased for each circuit type as a result of scaling and can only be reduced by the use of novel device structures or by new and better developed technologies. For example, a highly doped substrate with a box isolation may be used, where the trench reaches far into the highly-doped region. The results presented are valid for both p-well and n-well concepts as the mechanism which initiates transient latch-up is independent of the well concept used."
}
@article{Milanović199025,
title = "Electronic structure and electron distribution in an inverse superatom calculated by a self-consistent method",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "25 - 30",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90042-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900422",
author = "V. Milanović and Z. Ikonić and D. Tjapkin and G. Todorović",
abstract = "A full self-consistent procedure, applied to an inverse superatom structure is described. It is shown, both numerically and theoretically, that the electron concentration is large, but not maximal, the point of maximum being displaced off centre due to the fact that the second excited level has three times as many electrons as the ground level. Such an effect does not occur in classical quantum wells and superlattices. Moreover it is shown that the self-consistent treatment is necessary for an exact analysis of the energy band structure of the inverse superatom: solving the problem only by a trial rectangular potential gives an error of about 20%."
}
@article{Nandi199031,
title = "Wide-range digitally programmable active-weighted R sinusoid oscillator",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "31 - 43",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90043-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900433",
author = "R. Nandi and S.K. Sanyai",
abstract = "A new active-weighted resistor (R) circuit realisation scheme for the generation of sinewave oscillation is presented. The proposed active-weighted R configuration is quite simple and variable-frequency oscillation over a fairly wide range by adjustment of one grounded resistor is possible. Thorough analysis based on the double pole model of the operational amplifier has been carried out. A novel design for the digital control of ω0 by an array of an optimum number of binary weighted switched tuner resistors has been presented wherein the CMOS switches used were actuated by a digital code. Satisfactory experimental results on both continuous and digital ωo control have been obtained. The effect of changing the d.c. supply voltage (±V) on ωo has been examined and interesting VCO characteristics has been experimentally obtained."
}
@article{K199045,
title = "A high input impedance all-pass realisation using a single current conveyor",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "45 - 47",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90044-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900444",
author = "K. and Pal",
abstract = "A circuit for realising a second order all-pass transfer function using a single current conveyor is proposed. The circuit offers very high input impedance."
}
@article{Zhenhua199049,
title = "The fastest sample-and-hold circuit",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "49 - 52",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90045-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900455",
author = "Zhenhua and Wang",
abstract = "In a normal fast sample-and-hold circuit (SHC), the sample rate is primarily limited by the acquisition time during which the hold capacitor is charged to the input level. This paper describes a new circuit configuration with which the sample rate is determined exclusively by the hold time. The SHC itself corresponds to a dummy-switch-compensated SHC with respect to clock-feedthrough."
}
@article{tagkey199053,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "53 - 57",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90046-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900466",
key = "tagkey199053"
}
@article{tagkey199058,
title = "Research and development (vol. 21 no. 3)",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "58 - 63",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90047-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900477",
key = "tagkey199058"
}
@article{tagkey199064,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "21",
number = "3",
pages = "64 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90048-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900488",
key = "tagkey199064"
}
@article{Stojadinović19903,
title = "Invited papers from the 18th Yugoslav Conference on Microelectronics (MIEL '90): Ljubljana, Yugoslavia, May 14–16, 1990",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "3 - 5",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90022-U",
url = "http://www.sciencedirect.com/science/article/pii/002626929090022U",
author = "N. Stojadinović and L. Trontelj"
}
@article{JamesD19907,
title = "Process and device modeling",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "7 - 20",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90023-V",
url = "http://www.sciencedirect.com/science/article/pii/002626929090023V",
author = "James D. and Plummer",
abstract = "Computer simulation offers a potentially powerful tool for designing new semiconductor devices or processes. Process and device simulators have been used for many years, but it is only in recent years that their use has become widespread. The reason for this increased use is simply that modern device structures are so complex that purely experimental design is very difficult and very expensive. The approach taken at Stanford in developing these kinds of simulators has been to base them on the best available physical models. We believe that this approach increases the range of design problems that the simulators can address."
}
@article{Majkusiak199021,
title = "Very thin oxides in vlsi technology: Properties and device implications",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "21 - 40",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90024-W",
url = "http://www.sciencedirect.com/science/article/pii/002626929090024W",
author = "B. Majkusiak and A. Jakubowski",
abstract = "The trend existing in MOS VLSI technologyto reduce the oxide thickness is discussed. The basic reasons for the trend, further implications concerning the physical properties of the oxide layer and the performance of the MOS devices, as well as physical limitations, are considered."
}
@article{Trontelj199041,
title = "Analog-digital ASIC design",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "41 - 51",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90025-X",
url = "http://www.sciencedirect.com/science/article/pii/002626929090025X",
author = "J. Trontelj and L. Trontelj",
abstract = "This paper presents some views on the present and future development of mixed analog-digital ASICs. The problems of analog-digital design methodology, inaccurate device models (especially layout dependent parameters) and automation design tool adequacy are discussed. Some recent developments are presented."
}
@article{AndrzejJ199053,
title = "Design for manufacturability and yield",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "53 - 66",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90026-Y",
url = "http://www.sciencedirect.com/science/article/pii/002626929090026Y",
author = "Andrzej J. and Strojwas",
abstract = "This paper focuses on the design strategies for VLSI circuits that are aimed at achieving manufacturable, high-yielding chips. The current status of statistical design methodologies is reviewed based upon statistically valid modeling and process characterization approaches. Both parametric and functional yield maximization strategies are covered. This paper argues that by providing a better starting point for manufacturing, the profitability and competitiveness can be significantly improved."
}
@article{Galloway199067,
title = "MOS device degradation due to total dose ionizing radiation in the natural space environment: A review",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "67 - 81",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90027-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929090027Z",
author = "K.F. Galloway and R.D. Schrimpf",
abstract = "This paper presents a review for the non-specialist of MOS device degradation due to total dose ionizing radiation in the natural space environment. Interface and oxide charge introduced in MOS dielectrics during ionizing radiation exposure cause changes in a number of device electrical parameters. Observed effects include: shifts in MOSFET threshold voltage, reduction of channel mobility, loss of drive capability and increase of leakage currents. Complex trade-offs between the interface and oxide trapped charge can occur in the natural space environment where the total dose is accumulated at a very low dose-rate."
}
@article{Hrovat199083,
title = "Thin and thick superconducting films based on the YBaCuO and BiSrCaCuO systems",
journal = "Microelectronics Journal",
volume = "21",
number = "2",
pages = "83 - 100",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90028-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269290900282",
author = "Marko Hrovat and Joẑe Gasperič",
abstract = "A review of high Tc superconducting YBaCuO and BiSrCaCuO thin and thick films deposited on various substrates is presented. Interactions between different substrate materials and high Tc superconductors and some problems with the superconducting transition temperature influenced by these substrates are discussed. Experimental studies and characterization of superconducting thin films using Raman spectroscopy are described."
}
@article{tagkey1990IFC,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "IFC - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90001-J",
url = "http://www.sciencedirect.com/science/article/pii/002626929090001J",
key = "tagkey1990IFC"
}
@article{tagkey19904,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "4 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90002-K",
url = "http://www.sciencedirect.com/science/article/pii/002626929090002K",
key = "tagkey19904"
}
@article{Atanassova19905,
title = "Low temperature plasma nitridation of thin thermal SiO2 and a silicon surface with native oxide",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "5 - 21",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90003-L",
url = "http://www.sciencedirect.com/science/article/pii/002626929090003L",
author = "E. Atanassova and J. Kassabov and E. Goranova",
abstract = "The interface, oxide and transport characteristics of the silicon/thin thermal SiO2 (20–35 nm) system after nitridation in a low temperature, “soft” ammonia plasma are investigated. Plasma conditions are found which lead to full transformation of the initial thermal oxide (thickness about 20 nm) into stoichiometric oxynitride film. The nitridation process consists of two stages: (i) formation of an oxynitride layer with worse dielectric and interface characteristics than those of the initial thermal oxide; and (ii) a further nitridation process leading to improvement of the properties of the formed oxynitride layer and its interface with Si without any stoichiometric change.
It is shown that the “soft” r.f. ammonia plasma, reacting with the native oxide on the silicon, induces growing of ultrathin oxynitride film. The properties of this layer in terms of its dependence on the substrate temperature (293–573 K) and plasma nitridation time (2–180 min) are investigated."
}
@article{Soncini199023,
title = "Surface state characterization at the oxide-silicon and nitroxide-silicon interfaces",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "23 - 28",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90004-M",
url = "http://www.sciencedirect.com/science/article/pii/002626929090004M",
author = "G. Soncini and G.B. Tripodi and M. Zen and N. Zorzi",
abstract = "Electrical characterization of oxide-silicon and nitroxide-silicon interfaces has been extensively carried out by deep level transient spectroscopy and capacitance-voltage techniques. These techniques have been applied to the study of the nitroxide-silicon interface in order to get a better understanding of the potential and limits of the nitroxide films as gate dielectrics for VLSI devices. The experimental results indicate that the nitridation process of thermally grown oxides significantly increases the flatband voltage, the oxide charge and the interface-state density. These drawbacks have to be overcome if the potential of nitroxides as VLSI gate dielectrics is to be fully exploited."
}
@article{Montgomery199029,
title = "A limited reaction processor with plasma capability",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "29 - 34",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90005-N",
url = "http://www.sciencedirect.com/science/article/pii/002626929090005N",
author = "J.H. Montgomery and F. Ruddle and C. Parkes and H.S. Gamble and B.M. Armstrong",
abstract = "This paper describes a custom built, limited reaction processor developed to allow sequential in-situ processes such as plasma clean, plasma oxidation and chemical vapour deposition. The reactor uses tungsten-halogen lamps to heat the wafer up to 1000°C with a maximum rate of 200°C s−1. A microwave magnetron provides gas plasma generation capability. It is shown that wafer temperature is a function of silicon type and dopant concentration. Polysilicon layers produced by the system are incorporated into polysilicon emitter bipolar transistor. Devices fabricated using a sequential in-situ plasma-clean, plasma-oxidation polysilicon deposition schedule exhibit more uniform gains compared to those devices given a wet-etch dip prior to polysilicon deposition."
}
@article{SureshBabu199035,
title = "Photoluminesce properties of doped and unintentionally doped hot wall deposited polycrystalline Zn3P2 films",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "35 - 40",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90006-O",
url = "http://www.sciencedirect.com/science/article/pii/002626929090006O",
author = "V. Suresh Babu and P.R. Vaya",
abstract = "Zn3P2 films were subjected to photoluminescence measurement. Polycrystalline Zn3P2 thin films were grown under optimized conditions of substrate, source and wall temperatures using the hot wall deposition technique. Unintentionally doped, silver doped and air annealed thin films were individually excited using an HeNe laser and the emission spectra were recorded at various temperatures from 14 to 350 K. Sub-band gap luminescence peaks were found to be weak compared to the broad and intense emission peak lying between the direct band gap at nearly 1.5 eV (at room temperature) and the fundamental indirect transition at 1.39 eV. The broad emission band is believed to originate from the transition from the conduction bands at the Γ point to the nearly uniformly distributed grain boundary energy states in the forbidden gap. The emissions due to acceptor impurity levels were detected in the sub-band gap region."
}
@article{Parvate199041,
title = "Analysis and optimization of a concentrator solar cell",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "41 - 53",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90007-P",
url = "http://www.sciencedirect.com/science/article/pii/002626929090007P",
author = "V.G. Parvate and V.P. Sundersingh",
abstract = "An optimization program has been successfully developed which analyzes the performance of a solar cell by taking into account all the parameter variations, to give the optimum efficiency value under the limitations of a given technology. The treatment by Hovel is extended to a high concentration solar cell and is combined with an optimized grid design procedure to give the overall efficiency value for a cell. From this study, it is observed that shallow junctions (0.2 mu;m) do not improve the overall efficiency of the cell to an appreciable extent and hence diffusion technology is sufficient for high concentration solar cells."
}
@article{NG199055,
title = "Discrete and integrated electronics: By Ervine M. Rijas Published by Prentice-Hall International, 1986, 413 pp.",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "55 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90008-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929090008Q",
author = "N.G. and Webb"
}
@article{tagkey199056,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "56 - 60",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90009-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929090009R",
key = "tagkey199056"
}
@article{tagkey199061,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "61 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90010-Z",
url = "http://www.sciencedirect.com/science/article/pii/002626929090010Z",
key = "tagkey199061"
}
@article{tagkey199062,
title = "Author index to vol. 20",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "62 - ",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90011-Q",
url = "http://www.sciencedirect.com/science/article/pii/002626929090011Q",
key = "tagkey199062"
}
@article{tagkey199063,
title = "Subject index to vol. 20",
journal = "Microelectronics Journal",
volume = "21",
number = "1",
pages = "63 - 64",
year = "1990",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(90)90012-R",
url = "http://www.sciencedirect.com/science/article/pii/002626929090012R",
key = "tagkey199063"
}
@article{John19894,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "4 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90061-X",
url = "http://www.sciencedirect.com/science/article/pii/002626928990061X",
author = "John and Butcher"
}
@article{Pantić19895,
title = "A new multi-layer ion implantation model for process simulation",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "5 - 10",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90062-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900621",
author = "D. Pantić and S. Mijalković and N. Stojadinović",
abstract = "A new model for calculation of ion implantation impurity profiles in general multi-layer targets is presented. The model is based on a transformed and scaled Maxwell energy distribution function as well as on the electronic/nuclear stopping power theory. The concentration profiles of arsenic and boron ions implanted through oxide and nitride layers on silicon substrate have been calculated and compared with the experimental data."
}
@article{Domashevskaya198911,
title = "The effect of composition and exposure to external factors on the electronic structure of amorphous silicon nitride in memory devices",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "11 - 18",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90063-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900633",
author = "E.P. Domashevskaya and V.N. Seleznev and E.N. Desyatirikova and V.A. Terekhov",
abstract = "Silicon nitride is widely used in microelectronics as a charge storage layer in MNOS memory devices. It has been studied using soft X-ray emission spectroscopy. To understand fatigue phenomena in memory devices and the nature of localized states (LS) in the band gap, L2,3 spectra of the valence band (VB) were obtained with attention being paid to the density of LS. a-SiNx and a-SiNx:H samples have been prepared by various methods. They were subjected to an electric field and to ultraviolet irradiation to model the degradation of devices. The investigation of a-SiNx showed that VB and especially LS spectra are very sensitive to composition changes. Increasing the nitrogen content of a-SiNx and a-SiNx:H causes a shift in the LS-spectrum to Ec and separation of the maximum into two, as well as changes in the shape of the VB spectrum. It has been found that E field exposure and UV irradiation irradiation the formation of some new SiO bonds in the VB spectrum of SiNx with a shift of the main maximum of the LS spectrum to Ec."
}
@article{Peŝić198919,
title = "Investigation of gate oxide breakdown in CMOS integrated circuits",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "19 - 26",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90064-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900645",
author = "B. Peŝić and S. Dimitrijev and N. Stojadinović",
abstract = "Investigation of gate oxide breakdown in CMOS integrated circuits, aimed at establishing its dependence on substrate doping (type and level) and its acceleration by an electric field, has been performed in this paper. In order to do this, time-zero-dielectric-breakdown (ramp-voltage-stressed I-V) and time-dependent-dielectric-breakdown (constant-voltage-stressed I-t) tests were carried out and the gate oxide breakdown histograms and electric field acceleration factor were determined and discussed in detail."
}
@article{Suñé198927,
title = "Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "27 - 39",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90065-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900657",
author = "J. Suñé and I. Placencia and E. Farrés and N. Barniol and F. Martin and X. Aymerich",
abstract = "Experimental breakdown data of different MOS structures under different wearout tests support the validity of a new physical approach to the breakdown statistics. This model is based on the idea that the dielectric breakdown is intimately related to the previous degradation of the SiO2 network, and particularly, to the generation of neutral electron trapping sites. The main properties of the widely used extreme-value statistical distributions are preserved, and the parameters involved have a natural physical interpretation. Only two parameters have been used to build up the model and to fit the experimental: data the minimum area that has to be degraded for the breakdown to be effective, and the critical number of traps that has to be locally generated to trigger the breakdown. Although the analytical calculations have provided excellent results, the Monte Carlo method has been shown to be powerful technique to introduce second-order effects in the sudy of the breakdown statistics."
}
@article{Bhan198941,
title = "Interface properties of two step thin gate oxides using 1,1,1-trichloroethane",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "41 - 48",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90066-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900669",
author = "R.K. Bhan and S.K. Lomash and P.K. Basu and K.C. Chhabra",
abstract = "The two step gate oxidation process is studied for growing highly reliable gate oxides for MOS devices using 1,1,1-trichloroethane as a chlorine source. In this process a part of the oxide layer is grown initially at a low temperature which is known to give a low density of defects in these oxides. This is followed by a high temperature growth process to get the desired oxide thickness as well as passivating these oxides against mobile ions. However, the effect of this two step process on the interface parameters has not been reported so far. In this study, the interface state density of the two step process is determined vis-a-vis the one step oxidation process. It is found from quasi-static C-V measurements that the interface state density of the two step process is about 15% lower than that of the conventional one step process near the valence band edge but has the same value near mid gap."
}
@article{Shams198949,
title = "Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "49 - 59",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90067-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900670",
author = "Q.A. Shams and W.D. Brown",
abstract = "Deposition of memory quality plasma-enhanced chemically vapor deposited silicon nitride and post-deposition modification by annealing using argon and nitrogen for carrier gases and annealing ambients have been studied. Although similar memory performance can be achieved, the deposition power and NH3/SiH4 ratio required to do so are functions of the carrier gas used since nitrogen actively participates in the deposition process. Fourier transform infrared, ultraviolet and Auger data reveal that materials deposited with the two gases have similar physical properties although argon films are less dense and lose hydrogen at a higher rate when subjected to annealing. Post-deposition annealing can be used to enhance memory properties of the material provided that the anneal is accomplished at 475°C for 30 minutes. However, enhancement of memory performance by annealling occurs only if the nitride has been deposited using optimum deposition parameters. When annealing is performed in nitrogen. Auger data suggest that nitrogen can be supplied to, or removed from, the material depending on the anneal temperature."
}
@article{tagkey198961,
title = "Research and development: Vol. 20 No. 6",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "61 - 63",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90068-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900682",
key = "tagkey198961"
}
@article{tagkey198964,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "20",
number = "6",
pages = "64 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90069-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900694",
key = "tagkey198964"
}
@article{tagkey1989iii,
title = "IEEE International conference on microelectronic Test structures: San Diego, California March 5–7, 1990",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "iii - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90035-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900359",
key = "tagkey1989iii"
}
@article{John1989iv,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "iv - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90036-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900360",
author = "John and Butcher"
}
@article{Heinrich19891,
title = "Gallium arsenide HEMTs for low-noise GHz communications engineering",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "1 - 6",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90037-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900372",
author = "Heinrich and Dämbkes",
abstract = "The demands of communication systems for low noise receiver front-ends has led to the development of new transistor structures based on GaAs material and fabricated by molecular beam epitaxy. This paper describes one such device, the high electron mobility transistor (HEMT)."
}
@article{SimonS19897,
title = "A v-groove Schottky/pn diode",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "7 - 12",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90038-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900384",
author = "Simon S. and Ang",
abstract = "V-groove Schottky/pn diodes were fabricated and their current-voltage characteristics were investigated. These diodes were found to have low cut-in voltages as in conventional Schottky diodes. However, their reverse current-voltage characteristics were found to resemble those of conventional pn diodes."
}
@article{Sinha198913,
title = "Electron microscope analysis of thermally annealed semi-insulating gallium arsenide",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "13 - 15",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90039-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900396",
author = "M.P. Sinha and G.M. Ganu",
abstract = "The microstructure of the surfaces of thermally annealed semi-insulating (SI) gallium arsenide was studied using scanning electron microscope. The structures are in agreement with the reported findings using laser Raman and Auger spectroscopy."
}
@article{Sanyal198917,
title = "A digitally programmable dual-input differentiator",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "17 - 23",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90040-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900402",
author = "S.K. Sanyal and U.C. Sarker and R. Nandi",
abstract = "A new active-RC differentiator network configuration with two operational amplifiers, few resistors and a single capacitor is described. The novelties of the network are ideal differentiation function realization, dual-input capability and control of rate time constant (τ) by a single resistor. Digital control of τ by use of a programmable resistor array that may be switched and controlled by a microprocessor has been designed and experimentally tested with satisfactory results."
}
@article{Kumar198925,
title = "The implementation and applications of current conveyors",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "25 - 46",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90041-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900414",
author = "U. Kumar and S.K. Shukla",
abstract = "The realization of current conveyors using op amps has been discussed, implemented and experimentally verified so that they can be integrated on a single chip. Nowadays, an important criterion of success for a circuit is that it should be easily integrable. Contemporary circuits have been tested and the best one is analysed theoretically and experimentally verified. A novel band-pass filter realization and a new general circuit for realizing oscillators have been proposed as applications and experimentally verified along with theoretical analysis and other considerations."
}
@article{tagkey198947,
title = "Present status of semiconductor integrated optical circuits: Y SUEMATSU (Fac. of Engn., Tokyo Inst. of Technol., Japan) Trans. Inst. Electron. Inf. Commun. Eng. C (Japan), vol. J71C, no. 5, pp. 603–612 (May 1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "47 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90042-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900426",
key = "tagkey198947"
}
@article{tagkey198947,
title = "The state of the art of the optoelectronics integrated circuit (OEIC) and its future prospect: I HAYASHI (Optoelectron. Technol. Res. Lab., Tsukuba, Japan) Trans. Inst. Electron. Inf. Commun. Eng. C (Japan), vol. J71C, no. 5, pp. 613–619 (May 1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "47 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90043-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900438",
key = "tagkey198947"
}
@article{tagkey198947,
title = "An integrated AlGaAs two-beam laser diode-photodiode array fabricated with reactive ion beam etching: M UCHIDA, K ASAKAWA (Opto-Electron. Res. Labs., NEC Corp., Kawasaki, Japan), S MATSUMOTO, H KAWANO Trans. Inst. Electron. Inf. Commun. Eng. C (Japan), vol. J71C, no. 5, pp. 739–747 (May 1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "47 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90044-X",
url = "http://www.sciencedirect.com/science/article/pii/002626928990044X",
key = "tagkey198947"
}
@article{tagkey198947,
title = "Monolithic integration of LD/HBTs on a semi-insulating InP substrate: K OHNAKA, H TSUJII, J SHIBATA (Opto-Electron. Labs., Matsushita Elect. Ind. Co. Ltd., Moriguchi, Japan) Trans. Inst. Electron. Inf. Commun. Eng. C (Japan), vol. J71C, no. 5, pp. 748–754 (May 1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "47 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90045-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900451",
key = "tagkey198947"
}
@article{tagkey198948,
title = "OEIC photoreceiver using InP system with a 5 V source voltage supply: M TOJO (Electron. Components Lab., Matsushita Electron. Components Co. Ltd., Kadoma, Japan), K MATSUDA, M KUBO, J SIBATA Trans. Inst. Electron. Inf. Commun. Eng. C (Japan), vol. J71C, no. 5, pp. 755–760 (May 1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90046-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900463",
key = "tagkey198948"
}
@article{tagkey198948,
title = "Approach to high speed operation of InGaAs/InP monolithic PIN/amplifier: K MATSUDA, M KUBO, M OGURA, J SHIBATA (Opto-Electron. Lab., Matsushita Elect. Ind. Co. Ltd., Moriguchi, Japan) Trans. Inst. Electron. Inf. Commun. Eng. C (Japan), vol. J71C, no. 5, pp. 761–767 (May 1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90047-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900475",
key = "tagkey198948"
}
@article{tagkey198948,
title = "A comparison of optical and electronic residue position-coded look-up tables: A P GOUTZOULIS (Westinghouse R&D Center, Pittsburgh, PA, USA) Proc. SPIE — Int. Soc. Opt. Eng. (USA), vol. 881, pp. 204–213 (1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90048-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900487",
key = "tagkey198948"
}
@article{tagkey198948,
title = "Optoelectronic neural networks based on holographically interconnected processors: Y OWECHKO, B H SOFFER, G J DUNNING (Hughes Res. Labs., Malibu, CA, USA) Proc. SPIE — Int. Soc. Opt. Eng. (USA), vol. 882, pp. 143–153 (1988).",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90049-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900499",
key = "tagkey198948"
}
@article{tagkey198948,
title = "Annealing technology under arsenic overpressure for GaAs LSI — influence on dislocation and threshold voltage: T EGAWA, Y SANO, H NAKAMURA, K KAMINISHI (Res. Lab.. Oki Electr. Ind. Co. Ltd., Hachioji, Japan) Electron. Commun. Jpn. 2. Electron. (USA), vol. 71, no. 4, pp. 10–18 (April 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90050-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900505",
key = "tagkey198948"
}
@article{tagkey198948,
title = "Formation of submicron PMOS transistors by implantation into silicide: K J BARLOW (Plessey Res. Ltd., Towcester, UK) Electron. Lett. (UK), vol. 24, no. 15, pp. 949–950 (21 July 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90051-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900517",
key = "tagkey198948"
}
@article{tagkey198948,
title = "MOSIS — a gateway to silicon: C TOMOVICH (Inf. Sci. Inst., Univ. of Southern California, CA, USA) IEEE Circuits Devices Mag. (USA), vol. 4, no. 2, pp. 22–23 (March 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "48 - 49",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90052-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900529",
key = "tagkey198948"
}
@article{tagkey198949,
title = "Performance limits of mixed analogue/digital circuits with scaled MOSFETs: E SANO (LSI Lab., NTT, Kanagawa, Japan), T TSUKAHARA, A IWATA IEEE J. Solid State Circuits (USA), vol. 23, no. 4, pp. 942–949 (Aug. 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "49 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90053-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900530",
key = "tagkey198949"
}
@article{tagkey198949,
title = "A comparison of VLSI architecture of finite field multipliers using dual, normal, or standard bases: I S HSU, T K TRUONG, L J DEUTSCH (Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA), I S REED IEEE Trans. Comput. (USA), vol. 37, no. 6, pp. 735–739 (June 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "5",
pages = "49 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90054-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900542",
key = "tagkey198949"
}
@article{John1989iv,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "iv - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90070-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900700",
author = "John and Butcher"
}
@article{FZ19891,
title = "Silicon device miniaturazation and its effect on processing techniques",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "1 - 10",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90071-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900712",
author = "F.Z. and Bathaei",
abstract = "The author recently attended a series of courses on Advanced Silicon Technology. These courses, organised by CEI Europa/Elsevier, covered in detail recent advances in process technology and future trends. The lecturers were acknowledged experts in the field from the United States, industry and academia. This article summarises some of the most important topics covered and indicates how the continually reducing scale of microelectronic devices is putting pressure on technologists to improve fabrication methods and to develop new solutions to the problems of miniaturization in the sub-micron era."
}
@article{Singh198911,
title = "An improved self aligned silicide process for VLSI",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "11 - 17",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90072-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900724",
author = "Awatar Singh and W.S. Khokle",
abstract = "An improved self aligned silicide process has been developed for VLSI applications. This process requires no spacer oxide walls. A 6 μm feature size exchange IC was employed as the test vehicle. The titanum disilicide and cobalt disilicide were used as the silicides at the S, D and G levels. These were formed by two step vacuum annealing methods. The excellent results were obtained with both of these silicides. The sheet resistance of TiSi2 (1 Ω sq.−1) was lower than that of CoSi2 (1.5 Ω sq.−1). The SEM has shown no lateral growth with either silicides. Further 0ork is continuing to implement it in the test vehicle with 2–3 μm feature size."
}
@article{Simeonov198919,
title = "Technology for fabrication of inverse-T gate lightly doped drain transistors with active polysilicon spacer",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "19 - 24",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90073-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900736",
author = "D. Simeonov and E. Goranova and T. Balabanska",
abstract = "A new transistor structure with inverse-T gate and active polysilicon spacer (APOS) is presented. The spacer is formed from doped polysilicon and is in electrical contact with both the transistor gates and the polysilicon interconnections. The effective extension of the polysilicon lines is calculated and good agreement with the experimental results is achieved."
}
@article{Gaviraghi198925,
title = "The estimation of fault coverage",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "25 - 30",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90074-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900748",
author = "S. Gaviraghi and D. Giacomuzzi and C. Morandi",
abstract = "Fault coverage estimation critically depends on the choice of the faults inserted in the fault list. This paper addresses the issues related to automatic fault list generation, pointing out some typical limitations of available CAD tools."
}
@article{Martinez198931,
title = "Active compensation of systems with a single feedback loop",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "31 - 36",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90075-X",
url = "http://www.sciencedirect.com/science/article/pii/002626928990075X",
author = "P. Martinez and A. Carlosena",
abstract = "A general method is proposed for the synthesis of RC active circuits. The generated systems present zero transfer function sensitivity with respect to the operational amplifier's time constant. Examples are given to illustrate the application of this method and the performance of generated circuits."
}
@article{K198937,
title = "Modified current conveyors and their applications",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "37 - 40",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90076-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900761",
author = "K. and Pal",
abstract = "This paper describes some new active blocks which can simulate some novel circuits such as inductance and frequency-dependent negative resistances superior to earlier realisations."
}
@article{tagkey198941,
title = "Internal thermal resistance of a multi-chip packaging design for VLSI-based systems : Y C LEE, H T GHAFFARI, J M SEGELKEN (AT&T Bell Lab., Murray Hill, NJ, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 293–301",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "41 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90077-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900773",
key = "tagkey198941"
}
@article{tagkey198941,
title = "New systems for fabrication of wafer scale interconnections in multichip packages : J F McDONALD, H T LIN, N MAJID, H GREUB, R PHILHOWER, S DABRAL (Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NJ, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 305–314",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "41 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90079-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900797",
key = "tagkey198941"
}
@article{tagkey198941,
title = "Thermal management of a high-performance multichip module : C C CHEN, P L YOUNG, J M CECH (Boeing Electron. Co., Seattle, WA, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988). pp. 302–304",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "41 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90078-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900785",
key = "tagkey198941"
}
@article{tagkey198941,
title = "Rapid prototyping of multichip packages using computer-controlled, ink jet direct-write : K F TENG, M A AZADPOUR, H Y YANG (Dept. of Electr. Eng., Mississippi State Univ., MS, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 326–329",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "41 - 42",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90080-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900803",
key = "tagkey198941"
}
@article{tagkey198942,
title = "A new organic hybrid circuit based on an aramid/epoxy laminate : E TSUNASHIMA (Matsushita Electron. Corp., Kyoto, Japan), T HIRAKAWA, K NISHIMURA, A OKUNO 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 480–485",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "42 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90081-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900815",
key = "tagkey198942"
}
@article{tagkey198942,
title = "A digital signal processor VLSI: DSSP1 : T KANEKO, H YAMAUCHI, A IWATA, Y MATSUYA (NTT LSI Labs., Tokyo, Japan) Electr. Commun. Lab. Tech. J. (Japan), vol. 37, no. 4–5, pp. 305–311 (1988). In Japanese",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "42 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90084-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900840",
key = "tagkey198942"
}
@article{tagkey198942,
title = "8-bit processors demand attention as integration, speed evolve to new levels : R WILSON Comput. Des. (USA), vol. 27, no. 11, pp. 49–50, 55–56, 60–61 (1 June 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "42 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90082-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900827",
key = "tagkey198942"
}
@article{tagkey198942,
title = "Printer controller ICs take on PDL bottlenecks : R WILSON Comput. Des. (USA), vol. 27, no. 13, pp. 26, 28, 30 (July 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "42 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90083-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900839",
key = "tagkey198942"
}
@article{tagkey198942,
title = "Microcontroller eases I/O processing burden : S BALIGA, G GOODHUE, J JENKINS Electron. Compon. Appl. (Netherlands), vol. 8, no. 2, pp. 76–80 (1987). [received: 9 Aug. 1988]",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "42 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90085-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900852",
key = "tagkey198942"
}
@article{tagkey198942,
title = "The SCC68070: a monolithic 68000 CPU and peripherals : G CONN Electron. Compon. Appl. (Netherlands), vol. 8, no. 2, pp. 95–100 (1987). [received: 9 Aug. 1988]",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "42 - 43",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90086-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900864",
key = "tagkey198942"
}
@article{tagkey198943,
title = "Managing graphics displays using a microcontroller : S BALIGA Electron. Compon. Appl. (Netherlands), vol. 8, no. 2, pp. 113–117 (1987). [received: 9 Aug. 1988]",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "43 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90087-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900876",
key = "tagkey198943"
}
@article{tagkey198943,
title = "High performance microprocessor chip-set comprising sequencer, integer and floating point processors : K -D TETZLAFF Elektron. Ind. (West Germany), vol. 19, no. 4, pp. 30, 36, 38, 40 (1988). In German",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "43 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90088-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900888",
key = "tagkey198943"
}
@article{tagkey198943,
title = "A new analytical model for the GaAs MESFET in the saturation region : P POUVIL, J -L GAUTIER, D PASQUET (ENSEA, Cergy, France) IEEE Trans. Electron Devices (USA), vol. 35, no. 8, pp. 1215–1222 (Aug. 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "4",
pages = "43 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90091-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900918",
key = "tagkey198943"
}
@article{tagkey1989iv,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "iv - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90001-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900013",
key = "tagkey1989iv"
}
@article{DC19891,
title = "Multiplexing input options of VLSI circuits implemented in four-phase dynamic logic technology",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "1 - 6",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90002-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900025",
author = "D.C. and Patel",
abstract = "Four-phase dynamic logic has been widely used to implement VLSI circuits. A technique which allows system designers to operate a custom-designed integrated circuit in different modes is to connect an input option pin to either a logic level 1 or a logic level 0 according to the specification by connecting it to Vcc or ground respectively. This method allows the designer to configure the operation of the circuit in one of the two modes. In this paper it is shown that each pin can be used to offer four modes of operation instead of two by the use of a simple multiplexing circuit. The circuit was simulated and its operation verified using the industry-standard program SPICE. The additional area required to implement the demultiplexing circuit on the chip may be offset by the saving achieved by the use of one pin to input four variables instead of two pins. Removal of an input pin from the integrated package results in the saving of silicon area on the chip as it eliminates the contact pad area and the associated input gate protection circuitry."
}
@article{Veljko19897,
title = "Microprocessor architecture and design for gallium arsenide technology (part 2)",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "7 - 9",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90003-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900037",
author = "Veljko and Milutinović",
abstract = "Gallium arsenide microprocessors have now become a reality. The major problem is no longer how to design and implement a gallium arsenide microprocessor: now the major problem is how to design it so that it is approximately N times faster (for compiled HLL code) than its silicon counterpart, where N refers to the speed ratio of gallium arsenide and silicon, on the gate level. In order to achieve this goal, the approaches to the architecture, organization, and design have to be changed. In a previous paper, the approach known as catalytic migration was discussed. In this paper, the approach referred to as algorithmic reevaluation is discussed. The two approaches give the best results when applied together."
}
@article{MuhammadTaher198911,
title = "Nonlinear distortion due to early voltage effect in the current source transistors of bipolar transconductance stages",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "11 - 18",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90004-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900049",
author = "Muhammad Taher and Abuelma'atti",
abstract = "A simple formula is presented for the input/output characteristics of the bipolar transconductance stage taking into account the Early voltage effect of the current source transistors. Also, a closed-form expression is derived for the output signal of a transconductance stage excited by a multisinusoidal input signal."
}
@article{Mehta198919,
title = "Structural distortion and the effect of bake-before-development in a negative photoresist process",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "19 - 25",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90005-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900050",
author = "Rajesh Mehta and D.N. Singh and M.J. Zarabi",
abstract = "Major structural distortions such as orange peel, line distortion and microbridging due to swelling of negative photoresist have been studied. The physical mechanisms of these distortions have been explained on the basis of various experiments. Thermal treatment of the resist between exposure and development process steps has been found to be very effective in minimising the structural distortions and thus help improve the minimum linewidth resolution capability of the negative resist system. An optimised “bake-before-development” (BBD) technique for a negative photoresist process with various control conditions is described."
}
@article{Singh198927,
title = "Study of reaction kinetics for titanium disilicide formation by evaporated titanium on silicon",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "27 - 37",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90006-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900062",
author = "Awatar Singh and W.S. Khokle",
abstract = "A study of evaporated titanium films on silicon forming titanium disilicide has been made. Two types of configuration consisting of titanium/n-silicon/titanium/ native oxide/silicon and titanium and silicon respectively were used. Both nitrogen and vacuum annealing methods were employed for silicidation. The vacuum annealing method yielded titanium disilicide with the lowest sheet resistance of 0.8 Ω per square and was successfully implemented in a salicide process. The film surface as revealed by scanning electron microscopy was quite smooth. It was also possible to vary the transition temperature by the heating rate. The nitrogen anneal method produced films with higher sheet resistance (1.2 Ω per square) as the top surface developed a titanium nitride layer during annealing. X-ray diffraction and Auger electron spectroscopy techniques revealed the formation of a metal-rich monosilicide in the beginning which ultimately transformed to titanium disilicide after passing through the titanium monosilicide phase."
}
@article{Brenman198939,
title = "The “hedgehog” shape of an ESD failure",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "39 - 41",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90007-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900074",
author = "M. Brenman and J. Mejerovich",
abstract = "During our long experience in failure analysis work, many very picturesque photographic results were obtained. This article presents one of the most attractive photos which was obtained during electrostatic discharge, ESD, identification by means of liquid crystal hot spot detection. Our aims are to show this result for its intrinsic beauty and to aid other analysts in the identification of ESD failures."
}
@article{Brenman198943,
title = "Human contamination as a source of IC failures",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "43 - 47",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90008-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900086",
author = "M. Brenman and J. Mejerovich",
abstract = "It is believed that the semiconductor industry has come a long way in trying to eliminate the source of major failures due to corrosion. Notwithstanding, often the user is surprised by findings such as that detected by our failure analysis laboratory, in routine internal visual inspection. A very high priced hybrid was found to have dried spittle on one of the chips. As a result, corrosion in one of the metallised strips developed. In this paper, results of microscopic and SEM-EDAX examination are given to show, without doubt, that saliva is the source of corrosion."
}
@article{tagkey198949,
title = "Protection of thyristors against overvoltage with breakover diodes: H M LAWATSCH, J VITINS (BBC Brown Boveri Ltd., Baden, Switzerland) IEEE Trans. Ind. Appl. (USA), vol. 24, no. 3, pp. 444–448 (May-June 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "49 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90009-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900098",
key = "tagkey198949"
}
@article{tagkey198949,
title = "Optical-beam-induced current measurements in semiconductor devices: P GREENWOOD (Waterloo Sci. Inc., Waterloo, Ont., Canada) Microelectron. Manuf. Test. (USA), vol. 11, no. 5, pp. 14–16 (April 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "49 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90010-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900104",
key = "tagkey198949"
}
@article{tagkey198949,
title = "Characterisation of large area devices by an improved constant capacitance voltage transient technique: JENG-JYE SHIAU, A L FAHRENBRUCH, R H BUBE (Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA) Sol. Cells (Switzerland), vol. 24, no. 3–4, pp 363–369 (July-Aug 1988). (Eighth Photovoltaic Research and Development Project Review Meeting, Denver, CO, USA, 15–18 Nov. 1987)",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "49 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90011-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900116",
key = "tagkey198949"
}
@article{tagkey198949,
title = "High performance cooling systems for advanced semiconductor equipment: J JACQUELIN (Lab. de Marcoussis, France), P FAUVEL, B LEGRAND Third International Conference on Power Electronics and Variable-Speed Drives (Conf. Publ. No. 291), London, UK, 13–15 July 1988 (London, UK: IEE 1988), pp. 188–191",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "49 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90012-8",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900128",
key = "tagkey198949"
}
@article{tagkey198950,
title = "Platinum wire wedge bonding: a new IC and microsensor interconnect: J V MANTESE, W V ALCINI (Dept. of Electr. & Electron. Eng., General Motors Res. Labs., Warren, MI, USA) J. Electron. Mater. (USA), vol. 17, no. 4, pp. 285–289 (July 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "50 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90013-X",
url = "http://www.sciencedirect.com/science/article/pii/002626928990013X",
key = "tagkey198950"
}
@article{tagkey198950,
title = "Silver-glass die attach and large-area dice: N L OWENS (Motorola Semicond. Products Sector, Phoenix, AZ, USA) Microelectron. Manuf. Test. (USA), vol. 11, no. 5, pp. 6–7 (April 1988)",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "50 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90014-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900141",
key = "tagkey198950"
}
@article{tagkey198950,
title = "High reliability silver paste for die bonding: Y OKABE, A KUSUHARA, M MIZUNO, K HORIUCHI (Sumitomo Bakelite Co. Ltd., Kanagawa, Japan) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 mAY 1988 (New York, NY, USA: IEEE 1988), pp. 468–472",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "50 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90015-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900153",
key = "tagkey198950"
}
@article{tagkey198950,
title = "New film-type die attach adhesives: T L HOOPMAN, R S REYLEK, J L SCHENZ, K C THOMPSON (3M Center, St. Paul, MN, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 473–479",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "50 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90016-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900165",
key = "tagkey198950"
}
@article{tagkey198950,
title = "Impact of residue on Al/Si pads on gold bonding: S S AHMAD (Intel Corp., Chandler, AZ, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 534–538",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "50 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90017-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900177",
key = "tagkey198950"
}
@article{tagkey198951,
title = "The development of new copper ball bonding-wire: S MORI (Mitsubishi Metal Co. Ltd., Saitama, Japan), H YOSHIDA, N UCHIYAMA 1988 Proceedings of the 38th Electronics Components Conference (88CH260-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 539–545",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "51 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90018-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900189",
key = "tagkey198951"
}
@article{tagkey198951,
title = "Thermosonic gold-wire bonding to precious-metal-free copper lead-frames: B LANG, S PINAMANENI (Nat. Semicond. Corp., Santa Clara, CA, USA) 1988 Proceedings of the 38th Electronics Components Conference (88CH2600-5), Los Angeles, CA, USA, 9–11 May 1988 (New York, NY, USA: IEEE 1988), pp. 546–551",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "51 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90019-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900190",
key = "tagkey198951"
}
@article{tagkey198951,
title = "High frequency hybrid integrated circuits: A SONKOLY, G SZARAZ, B ZSOLDOS Hiradastechnika (Hungary), vol. 39, no. 1, pp. 42–45 (1988). In Hungarian",
journal = "Microelectronics Journal",
volume = "20",
number = "3",
pages = "51 - ",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90020-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289900207",
key = "tagkey198951"
}
@article{N1989iii,
title = "Microelectronics into the nineties: Invited papers from the 17th Yugoslav conference on microelectronics (MIEL ′89)",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "iii - vi",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90120-1",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901201",
author = "N. and Stojadinović"
}
@article{JohnB19891,
title = "Into the nineties: VLSI trends and education",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "1 - 7",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90121-3",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901213",
author = "John B. and Butcher",
abstract = "Any consideration of VLSI must take into account two features of IC technology: decreasing line-widths and increasing device count. These are the twin driving forces of research and development programs. However, it is necessary also to consider a third factor: producibility. The history of microelectronics technology is full of good ideas and exciting research projects which never quite became a commercial reality. The important question is therefore not “what can be done?”, but “what will be done?”. This paper looks at some of the ways in which current technology may lead to new devices in the last decade of the twentieth century. Inevitably this will put emphasis on increasing complexity—designers seem never to be satisfied with current capability in this respect. However, a “simple” increase of chip size to achieve multi-mega device circuits seems unlikely. At the very least, it will not be simple. Future development of VLSI (or ULSI) devices seems almost certain to involve new technology, perhaps in three dimensions, or new design concepts such as fault tolerant architectures. Indeed, the ultimate VLSI — wafer scale integration — will certainly require innovation in both technology and design. A review of this kind should also not neglect the human factor. New ideas and new technology will require the development of new engineers and scientists. A revolution is taking place in our educational system to meet the challenges posed by the dramatically changing needs of our industry. This problem will also be considered and ways suggested of tackling it."
}
@article{Maes19899,
title = "Trends in semiconductor memories",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "9 - 58",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90122-5",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901225",
author = "H.E. Maes and G. Groeseneken and H. Lebon and J. Witters",
abstract = "An overview is given of the state-of-the-art of the different semiconductor memory types and the trends in their future developments are discussed. The paper treats the physical operation principles, the evolution in technology and device concepts and the new developments and trends for each class of memory devices comprising SRAM (static random-access memories), DRAM (dynamic random-access memories), EPROM (erasable programmable read-only memories) and full-feature and flash EEPROM (electrically erasable programmable read-only memories). The reliability problems specific to the above mentioned memory types are also discussed. Finally the different approaches and technologies are compared in terms of their density, speed performance, applications, market and long term trends."
}
@article{Zimmer198959,
title = "BiCMOS: technology and circuit design",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "59 - 75",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90123-7",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901237",
author = "G. Zimmer and W. Esser and J. Fichtel and B. Hosticka and A. Rothermel and W. Schardein",
abstract = "In this paper, the state-of-the-art of combined bipolar/CMOS (BiCMOS) technologies and circuit techniques is described. Examples of advanced BiCMOS technologies for various applications will be given, together with theoretical considerations which allow a comparison of the bipolar and MOS transistors. New BiCMOS circuit techniques are presented for analog and digital applications. It will be shown that the BiCMOS technology offers some significant advantages for analog circuits, such as operational amplifiers, low impedance output stages, and analog multipliers. Digital systems benefit from novel circuit techniques employed in buffers, interface circuits, logic gates, and large macrocells (e.g. multipliers, RAM, CAM). Several examples demonstrate the advantages of BiCMOS realizations over standard CMOS."
}
@article{Rossel198977,
title = "Smart power and high voltage integrated circuits and related MOS technologies",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "77 - 103",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90124-9",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901249",
author = "P. Rossel and J. Buxo and M. Bafleur and H. Tranduc",
abstract = "The state-of-the-art of high voltage and integrated power circuits in MOS technology is presented. In the introduction, the evolution of these integrated structures is described, their major advantages over the discrete device solution are recalled and the issues concerning integration are addressed. The structures of the various devices realized in MOS technology and used as power switches in integrated circuits are reviewed. The two main families of circuits currently developed are considered, i.e. (i) smart power technologies including one or several (common drain) power switches having a vertical configuration, integrated with their control and protection circuitry and (ii) high voltage integrated circuits in which the power devices are lateral, of low current capability and where the control circuits (CMOS or bipolar) may have a higher integration density. The major functional issues related with the design of a smart power switch are presented. The main building blocks, in particular the thermal limit circuitry as well as the bias stabilized networks, are detailed at the transistor level. It appears that the involved analog circuitry can be properly stabilized with respect to electrical fluctuations as well as to process related parameter variations and instabilities."
}
@article{Yoichi1989105,
title = "Three-dimensional integrated circuit: technology and application prospect",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "105 - 112",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90125-0",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901250",
author = "Yoichi and Akasaka",
abstract = "This paper describes the features and state-of-the-art of process and device technologies of three-dimensional ICs. Various kinds of application proposals of three-dimensional structures are also presented and discussed. One of the most promising application areas in future is believed to be image sensing and processing. The SOI and some other new technologies are applied for fabricating the functional model of an intelligent image processor with a three layer structure, resulting in a new synthetic operation consisting of light sensing, quantization, and signal processing. The capabilities of multi-functional operation and the parallel processing verified in this miniature system give a clear image of the future of three-dimensional ICs."
}
@article{Selberherr1989113,
title = "Three-dimensional process and device modeling",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "113 - 127",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90126-2",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901262",
author = "S. Selberherr and E. Langer",
abstract = "This contribution is intended to review the international state-of-the-art in three-dimensional process and device modeling. As one particular example, results for ion implantation into a three-dimensional trench are presented. Redistribution of dopants, interstitials and vacancies with fully coupled models is discussed. The recent refinements to carrier transport models in semiconductor devices are presented. As a particular example for three-dimensional device simulation the influence of the shape of the field-oxide in the width direction is discussed. Some remarks on the computational requirements are made."
}
@article{CH1989129,
title = "Fact and fiction in yield modeling",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "129 - 151",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90127-4",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901274",
author = "C.H. and Stapper",
abstract = "The history of yield modeling is reviewed and some of the theories are evaluated. The development of simplistic yield models is described and compared with Murphy's theory. The more accurate models used for characterization and control of fabricators are also discussed. In addition, the methodology of dealing with photolithographic defects is explored. Some of the finer details of the historical development of this topic have often been overlooked, but are treated here in detail with references to the earlier work."
}
@article{Ljubiŝa1989153,
title = "CMOS technology: a base for micromachining",
journal = "Microelectronics Journal",
volume = "20",
number = "1–2",
pages = "153 - 169",
year = "1989",
note = "",
issn = "0026-2692",
doi = "10.1016/0026-2692(89)90128-6",
url = "http://www.sciencedirect.com/science/article/pii/0026269289901286",
author = "Ljubiŝa and Ristić",
abstract = "Evergrowing interest in sensors and actuators has created new research activities. Micromachining technology which involves realization of very small, three-dimensional mechanical structures in silicon is one such new discipline. This paper describes basic elements of micromachining including anisotropic etching, dependence of etch rate on crystallographic orientation, selectivity, patterning, undercutting, and etch-stop mechanisms. The basic elements of CMOS technology are also presented, and the analysis which shows that the standard CMOS process is suitable for micromachining. Furthermore, experimental results are presented proving the capability of CMOS technology to fabricate micromechanical devices. These results certainly represent a further step towards integrated sensor systems."
}
@article{John19883,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "3 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80001-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800016",
author = "John and Butcher"
}
@article{S19884,
title = "Accurate determination of doping profile from MOSFET d.c. measurement",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "4 - 7",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80002-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800028",
author = "S. and Gupta",
abstract = "A novel method of accurately determining the doping profile under the gate region of an enhancement mode MOSFET using d.c. measurements has been proposed. This method computes point-to-point impurity concentration in the gate region by utilising the Ids-Vgs data of the MOSFET operating in its linear region at varying substrate bias."
}
@article{Kumar19888,
title = "Growth and performance characteristics of thin films of SiO2",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "8 - 13",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80003-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880003X",
author = "A. Kumar and R.P. Agarwal and R. Singh",
abstract = "The fabrication of MOS structures using an improved wet anodisation technique at low temperature, together with electrical and interfacial properties of the grown films are discussed. The thin films, of the order of 300thick, grown by anodic oxidation, have characteristics comparable with those of thermally grown oxide films. Possible applications of the films for VLSI and humidity sensing are suggested."
}
@article{Sinha198814,
title = "Evaluating the microstructure of semi-insulating GaAs during activation",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "14 - 16",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80004-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800041",
author = "M.P. Sinha and G.M. Ganu and S. Mahapatra",
abstract = "Microstructure observations are reported with the aim of studying the activation of semi-insulating GaAs with PdCl2 solution. Results of these observations are shown to vary extensively with activation time. It has also been observed that one of the principal factors dominating catalytic particle deposition is the extent of the native oxide of GaAs."
}
@article{Klein198817,
title = "The mechanism of oxidation of thin Ni−Cr films",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "17 - 23",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80005-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800053",
author = "I.E. Klein and M. Hershkovich and I.A. Goldberg",
abstract = "Thin films of Ni−Cr were electron-beam-evaporated and subsequently annealed in air or in vacuum. Their depth profile was analysed by Auger electron spectroscopy. The film/substrate and the film/air interfaces were studied in order to shed light on contributing factors to adhesion and the mechanism of oxidation (termed resistor stabilisation in the microelectronics trade)."
}
@article{A198824,
title = "Thick film resistors with IrO2 and Calr×Ti1−xO3—examples of chemically reactive and unreactive systems",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "24 - 42",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80006-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800065",
author = "A. and Dziedzic",
abstract = "Investigations have been directed towards obtaining structural and electrical properties of two kinds of air-fired resistive thick films. The IrO2/glass system is chemically unreactive, i.e. the structure of the base material is preserved during the firing process. An active chemical process is found in Calr×Ti1−xO3-based resistors. The basic material reacts with the glass during a high temperature process and decomposes gradually. Simultaneously, iridium oxide with a rutile structure is formed in the film. This progressive substitution of the highly resistive material by iridium dioxide with a lower resistivity leads to significant microstructure differences in the formation of reactive and unreactive resistors. A mixed resistor series with reactive and unreactive compositions has been proposed. The better longterm stability at considerably elevated temperature (above 300°C), the wider temperature range of reversible resistance changes and the smaller amount of IrO2 theoretically necessary to obtain the same value of sheet resistance are the advantages of a reactive system. IrO2-based resistors are characterised by low sensitivity to variations in manufacturing conditions, better long-term stability below 300°C and smaller dependence of the temperature coefficient of resistance on sheet resistance."
}
@article{tagkey198843,
title = "Fast controller converts large static RAMs to FIFO buffers: N Siddique, F Krupecki Electron. Compon. Appl. (Netherlands), vol. 8, no. 2, pp. 109–112 (1987). [received: 9 Aug. 1988]",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "43 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80007-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800077",
key = "tagkey198843"
}
@article{tagkey198843,
title = "Flash EEPROMs—memory of the future?: H Czellary Elektronikschau (Austria), no. 6, pp. 38–41 (June 1988). In German",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "43 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80008-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800089",
key = "tagkey198843"
}
@article{tagkey198843,
title = "AC- and DC-powered subnanosecond 1-kbit Josephson cache memory design: Y Wada, M Hidaka, S Nagasawa, I Ishida (NEC Corp., Kanagawa, Japan) IEEE J. Solid State Circuits (USA), vol. 23, no. 4, pp. 923–932 (Aug. 1988)",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "43 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80009-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800090",
key = "tagkey198843"
}
@article{tagkey198844,
title = "Parallel testing of parametric faults in a three-dimensional dynamic random-access memory: P Mazumder (Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA) IEEE J. Solid State Circuits (USA), vol. 23, no. 4, pp. 933–941 (Aug. 1988)",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "44 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80010-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800107",
key = "tagkey198844"
}
@article{tagkey198844,
title = "Wide operating voltage range and low power consumption EPROM structure for consumer oriented ASIC applications: T Maruyama, Y Kawamura, N Kitagawa, K Shinada, N Hanada, Y Suzuki (Toshiba Semicond. Syst. Eng. Center, Kawasaki, Japan) Proceedings of the IEEE 1988 Custom Integrated Circuits Conference (Cat. No. 88CH2584-1), Rochester, NY, USA, 16–19 May 1988 (New York, NY, USA: IEEE 1988), pp. 4.1/1−4",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "44 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80011-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800119",
key = "tagkey198844"
}
@article{tagkey198844,
title = "Configurable EEPROMs for ASICs: B Carney, E Lucero, R Mendel, H Reiter (Nat. Semicond. Corp., Santa Clara, CA, USA) Proceedings of the IEEE 1988 Custom Integrated Circuits Conference (Cat. No. 88CH2584-1), Rochester, NY, USA, 16–19 May 1988 (New York, NY, USA: IEEE 1988), pp. 4.2/1–4",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "44 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80012-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800120",
key = "tagkey198844"
}
@article{tagkey198844,
title = "Transparent-refresh DRAM (TReD) using dual-port DRAM cell: T Sakurai, K Nogami, K Sawada, T Iizuka (Toshiba Corp., Kawasaki, Japan) Proceedings of the IEEE 1988 Custom Integrated Circuits Conference (Cat. No. 88CH2584-1), Rochester, NY, USA, 16–19 May 1988 (New York, NY, USA: IEEE 1988), pp. 4.3/1–4",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "44 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80013-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800132",
key = "tagkey198844"
}
@article{tagkey198844,
title = "An experimental 2-bit/cell storage DRAM for macro cell or memory-on-logic application: T Furuyama, T Ohsawa (Toshiba Corp., Kawasaki, Japan), Y Nagahama, H Tanaka, Y Watanabe, T Kimura, K Muraoka, K Natori Proceedings of the IEEE 1988 Custom Integrated Circuits Conference (Cat. No. 88CH2584-1), Rochester, NY, USA, 16–19 May 1988 (New York, NY, USA: IEEE 1988), pp. 4.4/1–4",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "44 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80014-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800144",
key = "tagkey198844"
}
@article{tagkey198844,
title = "A 185 K×6 field memory for TV/VTR pictures: Y Murakami, T Imai, K Inoue, K Hattori, Y Matsuura, M Hayashi, K Miki, Y Torimaru (Sharp. Corp., Nara, Japan) Proceedings of the IEEE 1988 Custom Integrated Circuits Conference (Cat. No. 88CH2584-1), Rochester, NY, USA, 16–19 May 1988 (New York, NY, USA: IEEE 1988), pp. 4.5/1–4",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "44 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80015-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800156",
key = "tagkey198844"
}
@article{tagkey198845,
title = "A 4 nsec 4 K×1 bit two-port BiCMOS SRAM: T S Yang, M A Horowitz, B A Wooley (Center for Integrated Syst., Stanford Univ., CA, USA) Proceedings of the IEEE 1988 Custom Integrated Circuits Conference (Cat. No. 88CH2584-1), Rochester, NY, USA, 16–19 May 1988 (New York, NY, USA: IEEE 1988), pp. 4.7/1–4",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "45 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80016-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800168",
key = "tagkey198845"
}
@article{tagkey198845,
title = "A new soft error immune static memory cell: M Minami, Y Wakui (Hitachi Ltd., Ibaraki, Japan), H Matsuki, T Nagano 1988 Symposium on VLSI Technology. Digest of Technical Papers, San Diego, CA, USA, 10–13 May 1988 (Tokyo, Japan: Japan Soc. Appl. Phys. 1988), pp. 57–58",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "45 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80017-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880017X",
key = "tagkey198845"
}
@article{tagkey198845,
title = "Cleaning alternatives for the 1990s: D A Elliott (Electrovert Ltd., Laprairie, Que., Canada) Circuit World (UK), vol. 14, no. 4, pp. 44–48 (July 1988)",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "45 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80018-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800181",
key = "tagkey198845"
}
@article{tagkey198845,
title = "Vapor phase soldering basics: J Ruffing (3M Ind. Chem. Products Div., St. Paul, MN, USA) Electron. Manuf. (USA), vol. 34, no. 7, pp. 20–21 (July 1988)",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "45 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80019-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800193",
key = "tagkey198845"
}
@article{tagkey198845,
title = "Increasing demand for laser beam machines: JEE, J. Electron. Eng. (Japan), vol. 25, no. 258, pp. 86–87 (June 1988)",
journal = "Microelectronics Journal",
volume = "19",
number = "6",
pages = "45 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80020-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880020X",
key = "tagkey198845"
}
@article{John19884,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "4 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80131-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801319",
author = "John and Butcher"
}
@article{Virdi19885,
title = "The development of a fully implanted 3 micron poly-gate NMOS technology (Part 2)",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "5 - 10",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80132-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801320",
author = "G.S. Virdi and S. Gupta and V.K. Dwivedi and W.S. Khokle",
abstract = "The 8 bit binary counter circuit chip whose fabrication was reported in part 1 of this article, has been tested. The 25 stage ring oscillator incorporated in this chip as a test device showed a gate delay of 2–3 nanoseconds and the results are presented in this paper.
The fabrication process has been further modified and the implantation schedule revised. This could further increase the punch-through voltage between source and drain in the case of enhancement mode transistors. A self aligned cobaltsilicide process had been employed in order to reduce the contact resistance between diffusion interconnect and polysilicon interconnect. The results are described in the paper."
}
@article{Simeonov198811,
title = "Application of the polysilicon edge sealed LOCOS process in scaled VLSI circuit fabrication",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "11 - 18",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80133-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801332",
author = "D. Simeonov and T. Balabanska and E. Goranova and M. Zvetkova and T. Dimitrova and Z. Naidenova",
abstract = "A polysilicon sealed pad oxide local oxidation process has been investigated. The oxidation mask in this method has a polysilicon frame formed along the perimeter of a conventional mask pattern by a self-aligned technique. This technology is completely free of “bird's beak” formation which is particularly important for increasing the packing density."
}
@article{Sinha198819,
title = "Morphology of Ni/GaAs surfaces",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "19 - 21",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80134-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801344",
author = "M.P. Sinha and S. Mahapatra",
abstract = "The morphology of nickel deposited on substrates of GaAs is investigated using scanning electron microscopy. The results of this investigation show that the morphology depends on the surface preparation of GaAs before nickel deposition."
}
@article{Singh198823,
title = "Air bridge and via hole technology for GaAs based microwave devices",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "23 - 27",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80135-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801356",
author = "J.K. Singh and O.P. Daga and H.S. Kothari and B.R. Singh and W.S. Khokle",
abstract = "This paper describes the process parameter dependence of air bridges and via holes of different dimensions for GaAs based microwave devices and ICs. Process conditions and technologically feasible optimum dimensions of the air bridges for circuit layout are suggested. A wet etching technique for the formation of extremely small (15×15 micron) via holes is also described."
}
@article{Shrivastava198829,
title = "Characterisation of InGaAs/GaAs superlattice structures by X-ray double crystal diffraction",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "29 - 33",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80136-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801368",
author = "M.C. Shrivastava and S. Swaminathan",
abstract = "Experimental X-ray double crystal diffraction rocking curves for different InGaAs/GaAs superlattices grown by molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) are used to obtain theoretically calculated rocking curves, based on Takagi's theory of dynamic X-ray diffraction of distorted crystal. A detailed assessment and accurate information about these superlattice structures are possible by a comparison of the experimental and theoretical curves. A comparison is also made between theoretical rocking curves obtained by dynamic and kinematical approaches."
}
@article{Jain198835,
title = "A switched capacitor biquad filter",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "35 - 38",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80137-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880137X",
author = "L.C. Jain and D. Hyland",
abstract = "This paper reports the realization of a switched capacitor biquad filter using discrete components. This filter is one type of biquad which gives lowpass, highpass, bandpass and notch outputs. This circuit was fabricated using CMOS switches and μA741 operational amplifiers. The experimental results and computer simulation using the SWITCAP program were compared. The agreement was found to be satisfactory."
}
@article{Deferm198839,
title = "Design impact on drain multiplication latch-up triggering",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "39 - 48",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80138-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801381",
author = "L. Deferm and H. Lebon and C. Claeys and G. Declerck",
abstract = "This paper deals with the drain multiplication current as latch-up trigger current and its impact on the latch-up sensitivity based on the design configuration. The influence of the relative position and the size of the well contact, towards the drain of a NMOS transistor, on the latch-up trigger current is studied in detail. Calculations of the parasitic well resistance and measurements of the maximum operating voltage and trigger current will be discussed.
It will be shown that the relative positions of the source, drain and the well contact have a great influence on the necessary latch-up trigger current. Furthermore it will be shown that the use of typical SRAM design features such as Vss line and/ or buried contacts can detrimentally decrease the latch-up hardness. All the effects will be illustrated by experimental results. Several guidelines will be given throughout the paper to increase considerably the latch-up trigger current."
}
@article{FZ198849,
title = "Semiconductor materials and devices for VLSI & ULSI-CEI/Elsevier Continuing Education Courses",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "49 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80139-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801393",
author = "F.Z. and Bathaei"
}
@article{tagkey198850,
title = "A new soft-error-immune DRAM cell using a stacked CMOS structure: K Tereda, S Kurosawa, T Takeshima (NEC Corp., Kawasaki, Japan) IEEE Trans. Electron. Devices (USA), vol. ED-34, no. 6, pp. 1368–1372 (June 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "50 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80140-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880140X",
key = "tagkey198850"
}
@article{tagkey198850,
title = "Design and evaluation of GaAs 16 Kbit static RAMs: M Togashi, M Ino, M Ida, M Hirayama (NTT Electr. Commun. Labs., Atsugi, Japan) Trans. Inst. Electron. Inf. & Commun. Eng. C (Japan) vol. J7OC, no 5, pp. 692–697 (May 1987). In Japanese",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "50 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80141-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801411",
key = "tagkey198850"
}
@article{tagkey198850,
title = "Advanced structured arrays combined high density memories with channel-free logic array: T Chan, A Yuen, K Knorpp, M Hung, P Tsao, M Freie, Y Chang, R Rasmussen, A Hui, P Yin (LSI Logic Corp. Milpitas, CA, USA) Proceedings of the IEEE 1987 Custom Integrated Circuits Conference (Cat. No. 87CH2430-7), Portland, OR, USA, 4–7 May 1987 (New York, USA: IEEE 1987), pp. 39–43",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "50 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80142-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801423",
key = "tagkey198850"
}
@article{tagkey198850,
title = "1.3 μm CMOS/bipolar macrocell library for the VLSI computer: T Hotta, K Kurita, H Maejima, M Iwamura, S Tanaka, T Bandoh, A Hotta (Hitachi Ltd., Ibaraki, Japan) Proceedings of the IEEE 1987 Custom Integrated Circuits Conference (Cat. No. 87CH2430-7), Portland, OR, USA, 4–7 May 1987 (New York, USA: IEEE 1987). pp. 253–256",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "50 - 51",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80143-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801435",
key = "tagkey198850"
}
@article{tagkey198851,
title = "Self-repairing semiconductor memory chip with improved availability/reliability: O Kowarik (Fakultat fur Elektrotechnik, Univ. der Budeswehr Munchen, Neubiberg, Germany) Proceedings of the IEEE 1987 Custom Integrated Circuits Conference (Cat. No 87CH2430-7), Portland, OR, USA, 4–7 May 1987 (New York, USA: IEEE 1987), pp. 598–601",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80144-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801447",
key = "tagkey198851"
}
@article{tagkey198851,
title = "4 Mb pseudo/virtually SRAM: S Yoshioka, Y Nagatoma, S Takahashi, S Miyamoto, M Uesugi (Oki Electr. Ind. Inc., Tokyo, Japan) 1987 IEEE International Solid State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, New York, USA, 25–27 Feb. 1987 (Coral Gables FL, USA: Lewis Winner, Feb. 1987), pp. 20–21, 320–322. In German",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80145-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801459",
key = "tagkey198851"
}
@article{tagkey198851,
title = "Circuit technologies for 16 Mb DRAMs: T Mano, T Matsumura, J Yamada, J Inoue, S Nakajima, K Minegish, K Miura, T Matsuda, C Hashimoto, H Namatsu (NTT Electr. Commun. Lab., Kanagawa, Japan) 1987 IEEE International Solid State Circuits Confence. Digest of Technical Papers. ISSCC. First Edition, New York, USA, 25–27 Feb. 1987 (Coral Gables, FL, USA: Lewis Winner, Feb. 1987), pp.22–23, 323–324",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80146-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801460",
key = "tagkey198851"
}
@article{tagkey198851,
title = "A 120 ns 4 Mb CMOS EPROM: S Atsumi, S Tanaka, S Saito, N Ohtsuka, N Matsukawa, S Mori, Y Kaneko, K Yoshikawa, J Matsunaga, T Iizuka (Toshiba Semicond. Dev. Eng. Lab., Kawasaki, Japan), N ARAI 1987 IEEE International Solid State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, New York, USA, 25–27 Feb. 1987 (Coral Gables, FL, USA: Lewis Winner, Feb. 1987), pp. 74–75, 344",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80147-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801472",
key = "tagkey198851"
}
@article{tagkey198851,
title = "A 7 ns 128K multichip ECL RAM-with-logic module: M Iwabuchi, K Ogiue, K Nakamura, S Makagami, S Isomura, S Kuroda, S Kawashima (Hitachi Device Dev. Center, Tokyo, Japan) 1987 IEEE International Solid State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition, New York, USA, 25–27 Feb. 1987 (Coral Gables, FL, USA: Lewis Winner, Feb. 1987), pp. 226–227, 411",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80148-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801484",
key = "tagkey198851"
}
@article{tagkey198851,
title = "Experimental realisation of a resistive single flux quantum logic circuit: V P Koshelets, K K Likharev, V V Migulin, O A Mukhanov (Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, USSR), G A Ovsyannikov, V K Semenov, I L Serpuchenko, A N Vystavkin IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp. 755–758 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "51 - 52",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80149-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801496",
key = "tagkey198851"
}
@article{tagkey198852,
title = "VLSI algorithms for solving recurrence equations and applications: O H Ibarra (Dept. of Comput. Sci., Minnesota Univ., Minneapolis, MN, USA), M A Palis IEEE Trans. Acoust., Speech & Signal Process (USA), vol. ASSP-35, no. 7, pp. 1046–64 (July 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "5",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80150-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801502",
key = "tagkey198852"
}
@article{JohnB19883,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "3 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80038-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800387",
author = "John B. and Butcher"
}
@article{tagkey19885,
title = "Conference report: The 16th Yugoslav Conference on Microelectronics Zagreb, Yugoslavia, 11–13 May 1988",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "5 - 6",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80039-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800399",
key = "tagkey19885"
}
@article{Anderson19887,
title = "Low temperature electronics",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "7 - 12",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80040-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800405",
author = "R.L. Anderson and J.L. Hill",
abstract = "Low temperature operation is being studied for electronic circuits and systems to improve speed, reduce noise and increase reliability. Reduced temperature operation results in improved performance from material related properties such as increased thermal and electrical conductivity and increased carrier mobility. These improvements are translated into increased circuit speed, higher packing density and reduced power dissipation. Since most degradation mechanisms are thermally activated it is expected that reliability will be improved at low temperatures. Operation of circuits immersed in liquid nitrogen seems attractive, but for optimum performance the devices must be designed for that particular temperature."
}
@article{PGA198813,
title = "Integrated D/A and A/D converters",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "13 - 24",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80041-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800417",
author = "P.G.A. and Jespers",
abstract = "A survey of architectures of high performance integrated A/D and D/A converters is presented."
}
@article{Z198825,
title = "“Fresnelian” sensors",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "25 - 35",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80042-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800429",
author = "Z. and Ogorelec",
abstract = "The title “Fresnelian” sensors in this work indicates sensors in which the conversion of non-electrical quantities into electrical ones is based on the light reflection and refraction at the interface between optical media. The detection and determination of the non-electrical quantity in these sensors consists of electrical measurement of the reflectance by use of standard semiconductor devices. Conversion is possible of all those variables which act either on the refractive index of the substance in contact with the sensor or on the light incident angle or on the flux of the so called evanescent wave. Optical excitation of surface plasmons in thin metallic films and the changes in the plasmon resonance due to their absorption on the surface can also be used as a sensor effect. The general analysis, supported by the examples previously elaborated indicates that on the basis of the effects mentioned many new types of sensor can be designed."
}
@article{P198837,
title = "Silicon solar cells",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "37 - 50",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80043-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800430",
author = "P. and Wagner",
abstract = "Solar cells are basically simple semiconductor devices, which have been improved considerably during the past 10 years. New design concepts enable especially silicon solar cells to approach efficiencies near their theoretical limit. These developments are paralleled by efforts to find new ways to produce inexpensive but high quality silicon for terrestrial photovoltaic applications. Results of both of these research and development areas are reviewed in the present paper."
}
@article{Veljko198851,
title = "Microprocessor architecture and design for GaAs technology",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "51 - 55",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80044-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800442",
author = "Veljko and Milutinović",
abstract = "GaAs technology has reached the VLSI level of integration. At the same power consumption, it is up to about half an order of magnitude faster than silicon technology, and up to several orders of magnitude more radiation hard. However, it imposes radical changes in the area of computer architecture and computer designs. This paper explains several processor design strategies for GaAs technology, and emphasizes the RISC strategy. It discusses the impacts of GaAs technology on the design of CPU resources (adder, register file, etc.), system resources (cache, coprocessing, etc.), and system software resources (code optimisation, hardware-to-software migration, etc.). It summarises the essence of one 32-bit GaAs microprocessor design, and reviews the lessons, learned. Finally, it concentrates on the synergism methodology for GaAs microprocessor design; actually, on its most promising aspect: catalytic migration."
}
@article{SL198857,
title = "VLSI testing and testability considerations: an overview",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "57 - 69",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80045-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800454",
author = "S.L. and Hurst",
abstract = "The increasing capability of being able to fabricate a very large number of transistors on a single integrated-circuit chip and the complexity of the possible systems has increased the importance of being able to test such circuits in an acceptable way and in an acceptable time. The time difficulties of tests are primarily due to the limited number of input/output connections on a chip which is the only means of access to the circuit, the ratio of the number of gates on a chip to the number of accessible I/Os increasing with chip size.
In this overview we will consider the difficulties and the present methods adopted to make the problem manageable. This must involve a consideration of the testability of the circuit at the design stage, with some partitioning and structured design methodology essential in the case of very complex circuits."
}
@article{L198871,
title = "A review of thick film glaze resistors",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "71 - 87",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80046-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800466",
author = "L. and Pešić",
abstract = "After a short historical introduction, the basic data about the content, cross-section and morphology of thick film glaze resistors (TFRs) is given. The second part of the paper presents a review of the known conductive mechanisms in TFRs and resisitivity dependence on conductive phase content. The currently accepted explanation of temperature properties, noise, high electric field, and ageing features of TFRs is given too."
}
@article{tagkey198888,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "19",
number = "4",
pages = "88 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80047-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800478",
key = "tagkey198888"
}
@article{John19883,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "3 - 4",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80048-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880048X",
author = "John and Butcher"
}
@article{Mehrad19885,
title = "Modelling of heterojunction bipolar devices",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "5 - 16",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80049-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800491",
author = "F. Mehrad and P.K. Ajmera",
abstract = "Steady-state current voltage characteristics of heterojunction bipolar transistors fabricated from materials having position dependent properties are obtained. A finite difference method through a quasi-linearisation technique is employed to solve numerically the three second-order non-linear differential equations describing the behaviour of these semiconductor devices. An automatic step selection process was developed in this work to ensure convergence during computation. This was found to work well but took up a fair amount of computer CPU time. An alternative, simple step selection process was then developed which considerably reduced the requirements on the computation time."
}
@article{Dokic198817,
title = "CMOS gates with regenerative action at one of inputs",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "17 - 20",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80050-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800508",
author = "B.L. Dokic and A.J. Iliskovic and Z.V. Bundalo",
abstract = "Novel CMOS gate circuits are proposed with the regenerative action at one input only. A Schmitt trigger is built in the inside of the conventional NOR or NAND gate instead of a CMOS transistor pair. There is a hysteresis only if the input which appertains to the Schmitt trigger is active. Otherwise, there is no positive feedback and the circuit acts as a conventional NOR or NAND gate."
}
@article{Yacoub198821,
title = "A system for critical path analysis based on back annotation and distributed interconnect impedance models",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "21 - 30",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80051-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880051X",
author = "G.Y. Yacoub and H. Pham and M. Ma and E.G. Friedman",
abstract = "This paper describes a VLSI CAD system that automatically selects optimal interconnect impedance models and embeds them into circuit simulation files each identified as a critical worst case timing path. The CAD system initially identifies pre-layout critical timing paths and back annotates these paths with post-layout interconnect impedances. Accurate post-layout resistive and capacitive interconnect impedances are automatically extracted, their magnitudes are compared to the path specific device dependent RC loads of each cell-to-cell node, and an approapriate RC lumped model is selected to optimally model the distributed nature of the RC interconnect impedance of that particular cell-to-cell node. These inter-connect RC impedance models are then back annotated into a SPICE formatted circuit simulation file for the precise determination of the timing behaviour of these critical paths. Therefore, timing accuracy and CPU efficiency are optimised on a node by node basis. This analysis system is tailored to support high performance circuits while maintaining automated layout database independence and maximal design flexibility."
}
@article{MJ198831,
title = "Functional programming aspects of wafer scale integration",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "31 - 40",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80052-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800521",
author = "M.J. and Shute",
abstract = "This paper describes a number of aspects concerned with building the largest single chip computers possible, namely ones which occupy an entire wafer of semiconductor. The techniques for achieving this are grouped under the collective name of wafer scale integration, and have tended to be presented only at microelectronics conferences, and workshops. This is a pity since there is much that the functional programmer and the microelectronics designer have in common, and can learn from one another. Workers developing applicative languages and their environments can specify what facilities are required of computers, and hence what is expedient for implementation. The microelectronics designer can point out what structures and facilities are practical, and hence which structures are readily supported.
This paper describes those parts of wafer scale integration which have repercussions on functional programming and computer architecture design. It ties together those areas of computer science which are significant to microelectronics, such as the use of array and tree structures, and the novel use of cellular automata to configure fault free multiprocessor systems. It notes the compromises which have been made on the FFPM, Wasp, Zapp and Cobweb projects between elegant software support, and practical wafer scale hardware design. Lastly, it highlights those areas of research which can be usefully addressed by both communities in the future."
}
@article{Patyra198841,
title = "A method of detecting the nature of IC defects",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "41 - 45",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80053-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800533",
author = "M.J. Patyra and J. Zabrodzki",
abstract = "Chip failures can be caused by point or parametric defects. The method shown is for classifying the failed chips against the two mentioned defects. The concept of an acceptibility region (Schmoo-plots) is used."
}
@article{E198847,
title = "Implications of EEC “harmonisation” for the electronics industry",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "47 - 50",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80054-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800545",
author = "E. and Willis"
}
@article{tagkey198851,
title = "Ultimate performance of the RSFQ logic circuits: OA Mukhanov, VK Semenov, K K Likharev (Moscow State Univ., USSR) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp. 759–762 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80055-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800557",
key = "tagkey198851"
}
@article{tagkey198851,
title = "Specific problems of numerical analysis of the Josephson junction circuits: A A Odintsov, V K Semenov, A B Zorin (Dept. of Phys., Moscow State Univ., USSR) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, p. 736 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80056-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800569",
key = "tagkey198851"
}
@article{tagkey198851,
title = "High-speed measurements of single gates: higher-voltage gates: H Ko, D A Petersen, T Van Duzer (Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp. 751–754 (March 1987). [received: 08 Sep. 1987] (1986 Applied Supercondictivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "51 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80057-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800570",
key = "tagkey198851"
}
@article{tagkey198852,
title = "Fabrication and characteristics of NbN-based Josephson junctions for logic LSI circuits: S Yano, Y Tarutani, H Mori, H Yamada, M Hirano, U Kawabe (Hitachi Ltd., Tokyo, Japan) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp. 1472–1475 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80058-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800582",
key = "tagkey198852"
}
@article{tagkey198852,
title = "New logical-sum and logical-product circuits using CMOS transistors and their applications to four-valued combinational circuits: T Watanabe, M Matsumoto, T Li (Dept. of Electr. Eng., Fac. of Eng., Tokyo Univ., Saitama, Japan) Int. J. Electron. (GB), vol. 63, no. 2, pp. 215–227 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80059-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800594",
key = "tagkey198852"
}
@article{tagkey198852,
title = "On the design of CMOS ternary logic circuits using T-gates: B P Chew, H T Mouftah (Dept. of Electr. Eng., Queen's Univ., Kingston, Ont., Canada) Int. J. Electron. (GB), vol. 63, no. 2, pp. 223–239 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80060-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800600",
key = "tagkey198852"
}
@article{tagkey198852,
title = "Microscopic simulation model of Josephson junctions for standard circuit analysis programs: H Kratzz, W Jutzi (Inst. fur Elektrotech. Grundlagen der Inf., Karlsruhe Univ., Germany) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp. 731–734 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80061-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800612",
key = "tagkey198852"
}
@article{tagkey198852,
title = "Josephson 4-bit digital counter circuit made by Nb/Al-oxide/Nb junctions: H Nakagawa, I Kurosawa, S Takada, H Hayakawa (Electrotech. Lab., Ibaraki, Japan) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp 739–742 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80062-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800624",
key = "tagkey198852"
}
@article{tagkey198852,
title = "Josephson data latch for frequency agile shift registers: J X Przybysz, R D Blllaugher (Westinghouse R&D Center, Pittsburgh, PA, USA) IEEE Trans. Magn. (USA), vol. MAG-23, no. 2, pp. 777–780 (March 1987). [received: 08 Sep. 1987] (1986 Applied Superconductivity Conference, Baltimore, MD, USA, 28 Sept.-3 Oct. 1986)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80063-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800636",
key = "tagkey198852"
}
@article{tagkey198853,
title = "The HD 63701 XOC microcontroller: the completely integrated bug: R Higgins Micro Syst. (France) no. 75, pp. 130–139 (May 1987). In French",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80064-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800648",
key = "tagkey198853"
}
@article{tagkey198853,
title = "A synthetic instruction mix for evaluating microprocessor performance: J C McCallum, T-S Chua (Dept. of Inf. Syst. & Comput. Sci., Nat. Univ. of Singapore, Singapore) IEEE Micro. (USA) vol. 7, no. 3, pp. 63–80 (June 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80065-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880065X",
key = "tagkey198853"
}
@article{tagkey198853,
title = "Cathedral-II: computer aided synthesis of digital signal processing systems: J Rabaey, J Vanhoof, G Goossens, F Catthoor, H De Man (IMEC Labs., Heverlee, Belgium)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80066-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800661",
key = "tagkey198853"
}
@article{tagkey198853,
title = "A real-time VLSI architecture for direct kinematics [robot application]: V Seshadri (AT&T Bell Labs., Piscataway, NJ, USA)",
journal = "Microelectronics Journal",
volume = "19",
number = "3",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80067-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800673",
key = "tagkey198853"
}
@article{JohnB19883,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "3 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80080-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800806",
author = "John B. and Butcher"
}
@article{PK19884,
title = "Wafer scale integration: a review",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "4 - 35",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80081-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800818",
author = "P.K. and Chaturvedi",
abstract = "The ever-increasing size and complexity of integrated circuit devices seems to leadinevitably to the ultimate “chip”, occupying the area of a whole wafer. This concept, which has been studied for many years, carries implications in terms of technology and design which are complex and which require careful consideration of true WSI is to be economically realised. This paper reviews the history of WSI development and describes the current state of the art, together with as-yet unresolved problems."
}
@article{Dwivedi198836,
title = "Fabrication of an n-MOS custom “subscriber chip” for a telephone exchange",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "36 - 41",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80082-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880082X",
author = "V.K. Dwivedi and S. Gupta and S. Johri and G.S. Virdi and O.P. Wadhawan and W.S. Khokle",
abstract = "A telephone exchange chip having an area of 11.22 mm2 has been fabricated by using a poly-gate n-MOS (E-D) technology developed by the authors. This digital logic chip consists of 500 gates based on 8μm design rules. Two successively fabricated batches of this chip have been tested and results with statistical data analysis are described in the paper. Some experiments have been carried out to improve the quality of buried contacts. The gates of depletion load transistors are connected to their sources by a poly-diffusion contact scheme called buried contacts. An additional phosphorus implantation in the buried contact area did not exhibit any significant drop in poly-diffusion contact resistance. The contact scheme was reinvestigated to reveal structural mismatching of polysilicon over the contact area."
}
@article{Nandi198842,
title = "Dual input summing/differentialdifferentiators: applications as a high frequency tunable selective filter",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "42 - 50",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80083-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800831",
author = "R. Nandi and U.C. Sarker",
abstract = "A two-amplifier single grounded-capacitor active-RC network is proposed. Analysis of the network in the low and high frequency regions has been carried out assuming respectively high-gain ideal amplifiers and single-pole frequency-dependent-gain amplifiers. The network realises a dual-input tunable differentiator, both summing and differential, in the low-frequency bands with appropriate design. In the high-frequency regions, the circuit can be conveniently designed to yield a second-order bandpass type filter function with single-resistor tunability of ωo and Q. This design utilises the amplifier gain-bandwidth parameter. All the design equations along with some recommendations on the choice of the amplifier types suitable for the dual-input summing/differetial circuit capabilities at low and high frequency ranges have been included. The network parameters have been shown to exhibit low active/passive sensitivities."
}
@article{Ramkumar198851,
title = "A new static memory cell based on thenegative resistance characteristic of a UJT",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "51 - 56",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80084-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800843",
author = "K. Ramkumar and M. Satyam",
abstract = "This paper indicates the possibility of a new static RAM cell based on the negativeresistance in the output voltage-current characteristics of a unijunction transistor (UJT). The dependence of the negative resistance characteristic on the parameters of the UJT and its impact on the performance of the RAM cell are discussed. The possibility of integrating the components of the cell into a single structure in order to reduce its overall size is also discussed."
}
@article{tagkey198857,
title = "Concurrent error detection in highly structure logic arrays: W k Fuchs, C Y R Chen, J A Abraham (CoordinatedSci. Lab., Illinois Univ., Urbana, IL, USA) IEEE J. Solid State Circuits (USA), vol. SC-22, no. 4, pp. 583-594 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "57 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80085-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800855",
key = "tagkey198857"
}
@article{tagkey198857,
title = "Applications of multi-valued logic to testing of binary andMVL circuits: M Serra (Dept. of Comput. Sci., Victoria Univ.,BC, Canada) Int. J. Electron. (GB), vol. 63, no. 2, pp. 197–214 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "57 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80086-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800867",
key = "tagkey198857"
}
@article{tagkey198857,
title = "Four-valued interface circuits for NMOS VLSI: A D Singh (Dept. of Electr. & Comput. Eng.,Massachusetts Univ., Amherst, MA, USA) Int. J. Electron. (GB), vol. 63, no. 2, pp. 269–279 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "57 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80087-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800879",
key = "tagkey198857"
}
@article{tagkey198857,
title = "Ternary logic based on a novel MOS building block circuit: H M AytacInt. J. Electron. (GB), vol. 63, no. 2, pp. 241–251 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "57 - 58",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80088-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800880",
key = "tagkey198857"
}
@article{tagkey198858,
title = "Quarternary unary operators: G Krishnan, A P Shivaprasad (Dept. of Electr.Commun. Eng., Indian Inst. of Sci., Bangalore, India) Int. J. Electron. (GB), vol. 63, no. 2, pp. 253-267 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "58 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80089-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800892",
key = "tagkey198858"
}
@article{tagkey198858,
title = "Switching delay time of emitter coupled logic circuit: Y Harada (Central Res. Lab., Hitachi Ltd., Kokubunji, Japan) Trans. Inst. Electron. Inf. & Commun. Engl. C (Japan) vol. J70C, no. 6, pp. 912-919 (June 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "58 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80090-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800909",
key = "tagkey198858"
}
@article{tagkey198858,
title = "Survey of semiconductor re-programmable memories: J Domagala (Inst. Elektron., Akad. Gorniczo-Hutniczej, Krakowie, Poland) Elektronika (Poland), vol. 28, no. 2-3, pp. 3-10 (1987). In Polish",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "58 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80091-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800910",
key = "tagkey198858"
}
@article{tagkey198858,
title = "68020 cache design: D Burns, D Jones (motorola, East Kilbride, Scotland) Electron. & Wireless World (GB), vol. 93, no. 1617, pp. 727-730 (July 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "58 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80092-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800922",
key = "tagkey198858"
}
@article{tagkey198858,
title = "Peripherals and cache memory arrangements for the Intel 80306: Electtron. Oggi (Italy), no. 43, pp. 129–133 (30 June 1987). In Italian",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "58 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80093-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800934",
key = "tagkey198858"
}
@article{tagkey198858,
title = "A VLSI chip set for real time vector quantization of image sequences: R Dianysian, R L Baker (Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA) 1987 IEEE International Symposium on Circuits and Systems (Cat. No. 87CH2394-5), Philadelphia, PA, USA, 4-7 May 1987 (New York, USA: IEEE 1987), Vol. 1, pp. 221–224",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "58 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80094-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800946",
key = "tagkey198858"
}
@article{tagkey198859,
title = "The European consumer electronics directory: First Edition 1988; 260 pages; Price: £135, US$240 Published by: Euromonitor Publications Ltd, 87–88 Turnmill Street, London EC1M 5QU, UK. Tel: 01-251 8025",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "59 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80095-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800958",
key = "tagkey198859"
}
@article{tagkey198860,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "60 - 61",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80096-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880096X",
key = "tagkey198860"
}
@article{tagkey198862,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "19",
number = "2",
pages = "62 - 64",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80097-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288800971",
key = "tagkey198862"
}
@article{tagkey1988CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "CO2 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80179-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801794",
key = "tagkey1988CO2"
}
@article{John19883,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "3 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80180-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801800",
author = "John and Butcher"
}
@article{Current19884,
title = "A simulation model of the composite “pinch resistor” device structure on linear bipolar semicustom integrated circuits",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "4 - 18",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80181-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801812",
author = "K.W. Current and D.M. Okahata",
abstract = "A circuit simulation model of the composite “pinch resistor” device structure on linear bipolar semicustom integrated circuits is presented. This model represents the operation of a pair of pinch resistors, and of their parasitic devices in their isolated epi region. Parasitics included in the model are the JFETs, and the vertical and lateral pnp transistors associated with the pinch resistors. Good agreement between simulated and experimental results has been found in DC, AC, and transient circuit examples. With this new model, the behaviour of this useful composite set of devices may be more completely depicted in circuit simulations."
}
@article{Virdi198819,
title = "Adjustment of threshold voltage of MOS devices by ion implantation",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "19 - 33",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80182-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801824",
author = "G.S. Virdi and S. Singh and B.C. Pathak and W.S. Khokle",
abstract = "In this paper we report the effect of oxide thickness, implant energy and dose on threshold voltage shift Δ VT. The implant parameters e.g. stopping power, projected range, straggle and the energy loss per micron for an ion in the substrate lattice are calculated using WHB potential. The junction depth beneath the oxide semiconductor surface is calculated using a two layer model. The parameters are then used in theoretical calculation of threshold shift of MOS devices. Experimental threshold voltages for unimplanted and implanted samples were obtained from C-V plots, showing fairly good agreement with theory."
}
@article{Goldberg198834,
title = "The kinetics of thin film resistor stabilisation",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "34 - 40",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80183-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801836",
author = "I.A. Goldberg and I.E. Klein and M. Hershkovich",
abstract = "Thin film resistors are manufactured by photolithography methods, using a nickel-chromium alloy vacuum deposited on a ceramic substrate. In order to stabilise the resistors, a high temperature heat treatment in an air furnace is undertaken, during which the resistors are partially oxidised. It was found that the extent of reaction can be expressed as p = 6 × 1 0 4 exp ( − 7400 / T ) t 1 3
A temperature of 325°C is recommended for practical applications. It involves a 30% resistance increase after an hour, while standard deviation is less than 2%."
}
@article{Jog198841,
title = "A planar p-n junction with near ideal breakdown voltage",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "41 - 47",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80184-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801848",
author = "Sujata Jog and V.P. Sundar Singh",
abstract = "MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breadkown voltage. In this paper, by using concentration profiling, a breakdown voltage of 91% of the bulk breakdown value is achieved. Numerical techniques were adopted to evaluate the field and the multiplication factor in the junction. The superiority of the method lies in its simplicity."
}
@article{Shrivastava198848,
title = "SEM study of thermal degradation of indium phosphide substrates",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "48 - 51",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80185-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928880185X",
author = "M.C. Shrivastava and S. Swaminathan",
abstract = "SEM observations are reported with the aim of studying the thermal degradation of InP substrate surfaces decomposed at typical VPE and LPE growth temperatures in a hydrogen atmosphere. The surface morphology is shown to vary extensively with the variation of annealing temperature."
}
@article{tagkey198852,
title = "A simplified algorithm for testing microprocessors: K K Saluja (Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA), L Shen, S Y H Su Comput. & Math. with Appl. (GB) vol. 13, no. 5-6, pp. 431–441 (1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80186-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801861",
key = "tagkey198852"
}
@article{tagkey198852,
title = "A technique for the design of systolic arrays with bit-level pipelining: B B Madan (Dept. of Comput. Sci. & Eng., ITT, New Delhi, India), S R Parker, M Zubair Circuits Syst. & Signal Process. (USA) vol. 6, no. 2, pp. 139–151 (1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80187-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801873",
key = "tagkey198852"
}
@article{tagkey198852,
title = "CMOS building blocks shrink and speed up FET systems: K Lamb (Plessey Semicond., Irvine, CA, USA) Electron. Des. (USA) vol. 35, no. 18, pp. 101–104, 106 (6 Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "52 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80188-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801885",
key = "tagkey198852"
}
@article{tagkey198852,
title = "On a certain approach to the hardware implementation of the division operation: A F Kurgaev, V N Opanasenko Elektron. Model. (USSR) vol. 9, no. 4, pp. 95–97 (July–Aug, 1987). In Russian. English translation in: Electron. Model. (GB)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "52 - 53",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80189-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801897",
key = "tagkey198852"
}
@article{tagkey198853,
title = "A systolic array for cycle-by-rows Jacobi algorithms: U Schwiegelshohn, L Thiele (Inst. of Network Theory & Circuit Design, Tech. Univ. of Munch, Germany) J. Parallel & Distrib. Comput. (USA) vol. 4, no. 3, pp. 334–340 (June 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80190-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801903",
key = "tagkey198853"
}
@article{tagkey198853,
title = "A comparison of CMOS circuit techniques: differential cascode voltage switch logic versus conventional logic: K M Chu, D L Pulfrey (Dept. of Electr. Eng., British Columbia Univ., Vancouver, BC, Canada IEEE J. Solid-State Circuits (USA) vol. SC-22, no. 4, pp. 528–532 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80191-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801915",
key = "tagkey198853"
}
@article{tagkey198853,
title = "Advanced development tools automate PLD design: R Collett, A Gheissari, T Kahl, M R Reinig, T Darbonne, M Kuenster ESD Electron. Syst. Des. Mag. (USA) vol. 17, no. 7, pp. 40–48 (July 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80192-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801927",
key = "tagkey198853"
}
@article{tagkey198853,
title = "A design of four-valued logic circuits using M-AND, M-OR, NOT operations: H Fujita (Sch. of Eng., Tokai Univ., Sapporo, Japan), A ODAKA Trans. Inst. Electron. Inf. & Commun. Eng. D (Japan) von. J70D, no. 6, pp. 1131–1139 (June 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80193-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801939",
key = "tagkey198853"
}
@article{tagkey198853,
title = "Study of a new-type I2L circuit: LI Guozheng, Zhang QI (Xian Jiaotong Univ., China) Res. & Prog. SEE (China) vol. 6, no. 4 pp. 340–346 (Nov. 1986). In Chinese [received: 17 Aug. 1987]",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80194-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801940",
key = "tagkey198853"
}
@article{tagkey198853,
title = "Signature analysis of testing in last standard-cell ASICs: EL Smitt (Data Gen. Corp., Westboro, MA, USA) VLSI Syst. Des. (USA) vol. 8, no. 6, pp 46–49 (20 May 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "53 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80195-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801952",
key = "tagkey198853"
}
@article{tagkey198854,
title = "A fast 32 K×8 CMOS static RAM with address transition detection: C W Chen, J P Peng, M Y S Shyu, M Amundson, J C Yu (Adv. Micro Devices Inc., Sunnyvale, CA, USA) IEEE J. Solid-State Circuits (USA) vol. SC-22, no. 4, pp. 533–537 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "54 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80196-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801964",
key = "tagkey198854"
}
@article{tagkey198854,
title = "A latch-up-free CMOS RAM cell with well-source structure: M Yoshimoto, K Anami, K Watabe, T Yoshihara, Snagao, Y Akasaka (Mitsubishi Electr. Corp., Hyogo, Japan) IEEE J. Solid-State Circuits (USA) vol. SC-22, no. 4, pp. 538–542 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "54 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80197-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801976",
key = "tagkey198854"
}
@article{tagkey198854,
title = "A double-word-line structure in bipolar ECL random access memory: S Kayano, K Anami, Y Nakase, T Shiomi, T Ikeda (Mitsubishi Electr. Corp., Hyogo, Japan) IEEE J. Solid-State Circuits (USA) vol. SC-22, no. 4, pp. 543–547 (Aug. 1987)",
journal = "Microelectronics Journal",
volume = "19",
number = "1",
pages = "54 - ",
year = "1988",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(88)80198-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269288801988",
key = "tagkey198854"
}
@article{John19873,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "3 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80327-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803270",
author = "John and Butcher"
}
@article{Richards19874,
title = "Is the incoming physical inspection of microelectronic components really necessary?",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "4 - 24",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80328-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803282",
author = "B.P. Richards and P.K. Footner",
abstract = "This paper demonstrates the desirability for efficient and extensive inspection procedures for microelectronic components. Some potential component and systems reliability implications of omitting these procedures are discussed. It is shown that many field failures result from the presence of defects not screened at incoming inspection.
Case histories of defective commercial products found in inspection exercises, and analyses of service device failures, are used to highlight these points. It is shown that, since many simple materials and processing defects are not screened out before vendor despatch, it is inadvisable to rely on the manufacturer for product inspection. Moreover, many of these simple defects/faults, which can be readily screened using simple inspection techniques, give rise to early life and field failures of components, thus compromising systems reliability. The cost-effectiveness of such inspection procedures, and their relation to burn-in and extended life testing are also discussed. There is increasing evidence to suggest that a similar situation exists in components bought to a military specification."
}
@article{Petrova198725,
title = "Hot electron effects in narrow width MOS devices",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "25 - 30",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80329-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803294",
author = "R.S. Petrova and R.S. Kamburova and P.K. Vitanov and E.N. Stefanov",
abstract = "Narrow channel NMOSFET device degradation is explored by measuring the effect of hot-carrier stress on the current-voltage characteristics, the transconductance, field-effect mobility and surface scattering factor. Under conditions of substrate electron injection, the degradation mechanism can be explained as being interface charge generation, resulting in an increase on the surface scattering factor. This effect is more pronounced in narrow channel devices due to an excess hot-electron activity along the edges of the channel where the in-diffusion of field implant creates a region with higher impurity concentration."
}
@article{Deshmukh198732,
title = "Simulation of resist profiles in single and triple layer electron beam lithography",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "32 - 38",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80330-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803300",
author = "P.R. Deshmukh and N.K.L. Raja and W.S. Khokle",
abstract = "Resist profiles in PMMA are simulated for the case of single and triple layer electron beam lithography. Line width variations and edge slopes are compared in two cases. Improvements in line width variation and edge slopes have been shown to occur after proximity exposure correction. Further in the case of a triple layer by changing the transfer layer from low At No. silicon to high At No. tungsten, the required dose is less due to increased proximity exposure closer to the beam in tungsten.
Resist profile simulation of closely spaced line patterns shows that a bridge between the patterns results which is eliminated after proximity exposure correction."
}
@article{Satyam198740,
title = "Role of composite materials in a functional approach to miniaturisation in electronics",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "40 - 48",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80331-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803312",
author = "M. Satyam and K. Ramkumar",
abstract = "This paper highlights the significance of a functional approach to miniaturisation of electronic systems. It is shown that multi-phase composite materials can provide exciting opportunities to develop new functional components which ultimately can result in miniaturisation. As an illustration, variable resistors with positive resistance coefficient are described in detail."
}
@article{Cousens198750,
title = "Polymer thick film systems and surface mount techniques",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "50 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80332-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803324",
author = "A.K. Cousens and J.S. Whitaker"
}
@article{tagkey198751,
title = "Testing in two-dimensional iterative logic arrays: W T Cheng (Eng. Res. Center, AT&T, Princeton, NJ, USA), J H Patel Comput. & Math. with Appl. (GB) vol. 13, no. 5-6, pp. 443–454 (1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "51 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80333-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803336",
key = "tagkey198751"
}
@article{tagkey198751,
title = "Effectiveness of single fault tests to detect multiple faults in parity trees: S Mourad, J L A Hughes, E J McCluskey (Center for Reliable Comput., Dept. of Electr. Eng. & Comput. Sci., Stanford Univ., Stanford, CA, USA) Comput. & Math. with Appl. (GB) vol. 13, no. 5-6, pp. 455–459 (1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "51 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80334-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803348",
key = "tagkey198751"
}
@article{tagkey198751,
title = "A testable design of programmable logic arrays with universal control and minimal overhead: K K Saluja (Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA), H Fujiwara, K Kinoshita Comput. & Math. with Appl. (GB) vol. 13, no. 5-6, pp. 503–517 (1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "51 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80335-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780335X",
key = "tagkey198751"
}
@article{tagkey198752,
title = "An easily testable optimal-time VLSI-multiplier B Becker (Univ. des Saarlandes, Saarbrucken, Germany): Acta Inf. (Germany) vol. 24, no. 4, pp. 363–380 (1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80336-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803361",
key = "tagkey198752"
}
@article{tagkey198752,
title = "Wavefront array processors-concept to implementation: S Y Kung, S C Lo, S N Jean, J H Hwang (Univ. of Southern California, Los Angeles, CA, USA) Computer (USA) vol. 20, no. 7, pp. 18–33 (July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80337-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803373",
key = "tagkey198752"
}
@article{tagkey198752,
title = "SLAPP: a systolic linear algebra parallel processor: B L Drake (US Naval Ocean Syst. Center, San Diego, CA, USA), F T Luk, J M Speiser, J J Symanski Computer (USA) vol. 20, no. 7, pp. 45–49 (July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80338-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803385",
key = "tagkey198752"
}
@article{tagkey198752,
title = "Some systolic array developments in the United Kingdom: J V McCanny (Dept. of Electr. & Electron. Eng., Queen's Univ., Belfast, N Ireland), J G McWhirter Computer (USA) vol. 20, no. 7, pp. 51–63 (July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80339-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803397",
key = "tagkey198752"
}
@article{tagkey198752,
title = "Partitioning: an essential step in mapping algorithms into systolic array processors: J J Navarro, J M Lllaberia, M Valero (Fac. de Info. de Barcelona, Univ. Politecnica de Cataluna, Spain) Computer (USA) vol. 20, no. 7, pp. 77–89 (July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80340-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803403",
key = "tagkey198752"
}
@article{tagkey198752,
title = "The design of a GaAs systolic array for an adaptive null steering beamforming controller: C E Hein, R M Zieger, J A Ubarno (RCA Adv. Technol Labs., Moorestown, NJ, USA) Computer (USA) vol. 20, no. 7, pp. 92–93 (July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80341-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803415",
key = "tagkey198752"
}
@article{tagkey198752,
title = "A systolic signal processor for signal-processing applications: D A Kandle (ESL Inc., Sunnyvale, CA, USA) Computer (USA) vol. 20, no. 7, pp. 94–95 (July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80342-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803427",
key = "tagkey198752"
}
@article{tagkey198752,
title = "Explicit formulation of delays in CMOS VLSI: D Auvergne, D Deschacht, M Robert (Univ. des Sci. et Technol. du Languedoc, Montpellier, France) Electron. Lett. (GB) vol. 23, no. 14, pp. 741–742 (2 July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "52 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80343-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803439",
key = "tagkey198752"
}
@article{tagkey198753,
title = "Fast and dense low-power multiple-valued I2L circuit: Q P Chao (Jiao Tong Univ., Shanghai, China), Tang Electron. Lett. (GB) vol. 23, no. 18, pp. 968–970 (27 Aug. 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "53 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80344-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803440",
key = "tagkey198753"
}
@article{tagkey198753,
title = "Programmable logic device preserves pins, product terms: C Jay (Monolithic Memories Inc., Santa Clara, CA, USA) Electron. Des. (USA) vol. 35, no. 13, pp. 131–132, 134, 136 (28 May 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "53 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80345-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803452",
key = "tagkey198753"
}
@article{tagkey198753,
title = "Control static-column DRAM with improved logic array: R K Breuninger (Texas Instrum. Inc., Dallas, TX, USA) Electron. Des. (USA) vol. 35, no. 16, pp. 91–95 (9 July 1987)",
journal = "Microelectronics Journal",
volume = "18",
number = "6",
pages = "53 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80346-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803464",
key = "tagkey198753"
}
@article{JohnB19873,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "3 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80431-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804317",
author = "John B. and Butcher"
}
@article{Kassabov19875,
title = "Electrical properties of Si−SiO2 structures treated in helium plasma",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "5 - 12",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80432-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804329",
author = "J. Kassabov and E. Atanassova and D. Dimittrov and E. Goranova",
abstract = "Experimental data are presented for the influence of helium plasma on the electrical properties of Si−SiO2 structures with dry thermal oxide (d=16−72 nm). It is found that for strongly damaged structures low temperature helium plasma introduces acceptor-type interface states near the conduction band edge and has an annealing effect on the deep acceptor-type states. It has also shown that the initial characteristics of the Si−SiO2 structures and the gas used are critical for the plasma-forming of both the interface and inversion channel properties."
}
@article{Awatar198713,
title = "Removal processes for damage and contamination after CF4/40%H2 reactive ion etching of silicon",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "13 - 24",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80433-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804330",
author = "Awatar and Singh",
abstract = "State of the art of RIE reactors, nature of damage and contamination introduced, their effects and controls is briefly reviewed. The defect model as conceived on this basis is presented. The highly selective etching of SiO2 relative to Si is done by reactive ion etching with CF4/40%H2. The damage and contamination introduced in Si are characterised by Al/p-Si Schottky diodes fabricated on dry etched Si wafers. The dry etching is found to convert an Al/p-Si ohmic contact into a rectifying one. Various removal processes of damage and contamination after dry etching are tried to restore the original behaviour of the diodes. The results indicate that ashing (RF sputter etching in N2 ambient) followed by HF dip are sufficient to restore the surface. The effects of omissions of RF sputter etching in N2 ambient and HF dip are also discussed. An alternative process of thermal oxidation of dry etched Si wafers in an O2/TCE ambient at 1000°C for 15 mins followed by HF dip is also seen to recover the surface. This is confirmed by lifetime studies made on post-oxidised Si wafers. The latter process consumes more silicon. The suitability of the process for VLSI fabrication is also discussed."
}
@article{McGillivray198725,
title = "CV characteristics of MOS capacitors with two top capacitive contacts",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "25 - 27",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80434-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804342",
author = "I.G. McGillivray and J.M. Robertson and A.J. Walton",
abstract = "Capacitive contacts can be used for the measurement of high frequency CV characteristics. This paper addresses the accuracy of this approach and demonstrates that the errors involved are considerably worse than those predicted assuming just two oxide capacitances in series. Practical measurements are presented and compared with those predicted by a theoretical model which includes the effect of depletion under the second contact. This analysis casts doubts upon the suitability of the structure for any quantitative measurements."
}
@article{Stennes198729,
title = "Investigation of thick film technology for microwave applications",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "29 - 35",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80435-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804354",
author = "M.J. Stennes and K.D. Stephan and H. Campbell and C.P. Smith and R.M. Zilberstein",
abstract = "Recently, considerable interest has arisen in the use of thick film technology for microwave circuit applications. The thick film process can be used to fabricate microwave circuits that perform just as well as thin film counterparts in the lower-frequency region below 1 GHz, but systematic efforts to explore the upper frequency limit of thick-film technology with practical microwave circuits have been lacking. We describe such an effort which involved testing four scaled versions of one microwave circuit design over an 18-to-one frequency range. By using the same basic design and scaling the circuit physically to cover a given sub-range, variations in the circuit design were eliminated and any degradation in measured performance can be attributed to intrinsic process limitations. Results are presented for octave-bandwidth Wilkinson power dividers for the frequency ranges 1–2 GHz, 2–4 GHz, 4–8 GHz, and 9–18 GHz. We conclude that satisfactory microwave performance can be obtained routinely from thick-film circuits up to approximately 10 GHz, and with special attention designs can be extended to perhaps 12–15 GHz."
}
@article{SS198737,
title = "Second generation' silicon compilers",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "37 - 44",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80436-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804366",
author = "S.S. and Dlay",
abstract = "The paper describes a ‘first generation’ silicon compiler for full custom NMOS and CMOS designs. The circuits are captured by using procedures embedded in the high level language PASCAL. Although the system enables designs to be described relatively quickly and reliably, and contains all the powerful constructs of a standard programming language, it is noted that this type of compiler is not entirely suitable for the complexity of circuits currently being designed. The difficulties arise due to the problems that designers have in relating to the textual description and the verbosity of the resulting description. Finally, the paper discusses how these silicon compilers can be improved and can form a basis for ‘second generation’ silicon compilers."
}
@article{Malcolm198745,
title = "Andrew Hodges, ,Alan Turing-The Enigma of Intelligence (1985) Unwin Paperbacks (Counterpoint),London (586 pages), price π5.95, (first published by the Hutchinson Publishing Group).",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "45 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80437-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804378",
author = "Malcolm and Shute"
}
@article{Keith198745,
title = "Handbook of Microelectronics Packaging and Interconnection Technologies",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "45 - 46",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80438-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780438X",
author = "Keith and Pitt"
}
@article{Keith198746,
title = "Thermal Design of Electronic Circuit Boards and Packages",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "46 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80439-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804391",
author = "Keith and Pitt"
}
@article{tagkey198747,
title = "Design systems for VLSI circuits: Logic synthesis and silicon compilation Proceeding of the Nato Advanced Study Institute held at L'Aquila, Italy, July 7–18, 1986 Edited by G. De Micheli Stanford University, CA, USA A. Sangiovanni-Vincentelli University of California, Berkeley, CA, USA P. Antognetti University of Genova, Italy Nato Advanced Science Institutes Series: E: Applied Science 136 July 1987, 654pp. Hardbound Dfl. 250.00/£84.75 ISBN 90-247-3561-0 Paperback Dfl. 100.00/£33.95 ISBN 90-247-3562-9 Martinus Nijhoff Publishers",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "47 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80440-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804408",
key = "tagkey198747"
}
@article{tagkey198749,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "49 - 51",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80441-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780441X",
key = "tagkey198749"
}
@article{tagkey198752,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "52 - 57",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80442-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804421",
key = "tagkey198752"
}
@article{tagkey198758,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "58 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80443-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804433",
key = "tagkey198758"
}
@article{tagkey198759,
title = "Personal computer graphics standards: Jbrag Comput. Gr. World vol. 7, no. 11, pp. 57–61 (1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "59 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80444-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804445",
key = "tagkey198759"
}
@article{tagkey198759,
title = "Computers put you in the picture: Anon Business Comput. Communic. pp. 16–18 (Nov. 1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "59 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80445-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804457",
key = "tagkey198759"
}
@article{tagkey198759,
title = "Fifth generation computing promises optimistic outlook for 1990's: J E Downs Data Manage. vol. 22, no. 7, pp. 18–20 (1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "59 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80446-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804469",
key = "tagkey198759"
}
@article{tagkey198759,
title = "The bubble is surfacing: B Woodward Systems Int. pp. 99 (Nov. 1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "59 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80447-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804470",
key = "tagkey198759"
}
@article{tagkey198759,
title = "Compatibility in microcomputers: R Handley Data Process. vol. 26 no. 8, pp. 23–25 (Oct. 1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "59 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80448-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804482",
key = "tagkey198759"
}
@article{tagkey198759,
title = "The integrated office: its present and future: D W McArthur Telecommunications vol. 18, no. 9, pp. 57–58, 90 (Sept. 1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "59 - 60",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80449-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804494",
key = "tagkey198759"
}
@article{tagkey198760,
title = "Using micros to manage production: W Carlson Folio vol. 13, no. 10, pp. 78–79, 226 (Oct. 1984)",
journal = "Microelectronics Journal",
volume = "18",
number = "5",
pages = "60 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80450-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804500",
key = "tagkey198760"
}
@article{John19873,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "3 - 4",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80368-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803683",
author = "John and Butcher"
}
@article{Bradley19875,
title = "Computer modelling of polysiliconcontacted emitter bipolar transistors for VLSI circuits",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "5 - 14",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80369-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803695",
author = "Susan M. Bradley and J.G. Doherty"
}
@article{Dejan198715,
title = "Clock distribution in application specific integrated circuits",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "15 - 27",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80370-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803701",
author = "Dejan and Mijuskovic",
abstract = "Application specific integrated circuits (ASICs) have rapidly reached VLSI dimensions, offering to a large community of system designers the possibility to develop their own ICs (10K–100K gates) in a highly secure CAD/CAE environment. However, they bring specific design problems, one of which is the distribution of the clock signals to a large number of sequential elements.
This article presents an optimisation method resulting in the minimum delay on the clockpath. The efficiency of the optimisation algorithm is evaluated via an example."
}
@article{ShiKay198729,
title = "Optical considerations in target alignment using a non-actinic wavelength microscope",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "29 - 34",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80371-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803713",
author = "Shi-Kay and Yao",
abstract = "Summary
In summary, a non-actinic wavelength alignment microscope with independent wavelength as well as bandwidth adjustment and structured illumination has been developed. It can focus to targets located at different levels from the exposure surface and can also acquire the target edges using the optical scattering phenomena at these edges and will distinguish this target edge from optical interference fringes. Thus, its alignment accuracy is not very sensitive to photoresist surface modulations which often affect the accuracy of the conventional bright field microscope.
Experimentally, this AWA system has been tested using actual half finished customer wafers. The software controlled AWA system can select the most suitable wavelength-bandwidth set-up for the operator. For targets without much resist thickness modulation, and thus interference fringes, a narrow band light source provides alignment accuracy between 0.06 micron to 0.14 micron three sigma. For the most difficult targets in which resist thickness is significantly modulated near a target, the AWA system can find the best optical configuration for it and achieve 0.12 micron to 0.2 micron three sigma alignment accuracy (for 3 micron heavily dyed photoresist on metal surfaces). This process insensitive non-actinic wavelength AWA system is easy to use since it does not require the pre-alignment exposure of the target area, nor does it require the bleaching of photoresist over targets."
}
@article{Gupta198735,
title = "A simple expert system for a mask shop",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "35 - 39",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80372-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803725",
author = "S.N. Gupta and K.I. Arshak",
abstract = "Computerisation of unit processes in the fabrication of integrated circuits has been taking place at a rapid pace since the complexity of these circuits has been going up considerably. One aspect of this computerisation has been the creation of data bases for unit processes. This data base concept has to be extended to knowledge bases leading to expert systems for these processes. There has been some effort in this direction in some of the important processes. In this paper we report a simple expert system for the mask making process which is based on an optical pattern generator. This approach is shown to make it very convenient to modify the existing knowledge base with refinement of the mask making process."
}
@article{tagkey198741,
title = "Sixth European Microelectronics Exhibition",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "41 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80373-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803737",
key = "tagkey198741"
}
@article{tagkey198742,
title = "An extended two-region-MOSFET-model for network analysis: R. Kienzler (Ist. fur Elektrische Nachrichtentech, Stuttgart, Germany) Arch. elektrotech. (Germany) vol. 69, no. 6, pp. 385-98 (1986). In German",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "42 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80374-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803749",
key = "tagkey198742"
}
@article{tagkey198742,
title = "Hierarchical timing verification system: R. Reddi, C. Chen (Sperry Corp., Blue Bell, PA, USA) Comput. Aided Des. (GB) vol. 18, no. 9, pp. 467-71 (Nov. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "42 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80375-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803750",
key = "tagkey198742"
}
@article{tagkey198742,
title = "Automated design of MOS circuits and layout: P.K. Bryant, S. Muroga (Dept. of Comput. Sci., Illinois Univ., Urbana, IL, USA) Comput. Aided Des (GB) vol. 18, no. 9, pp. 489-96 (Nov. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "42 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80376-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803762",
key = "tagkey198742"
}
@article{tagkey198742,
title = "Wirability expert system: N. Soong, A. Patel (Sperry Corp., Blue Bell, PA, USA) Comput. Aided Des. (GB) vol. 18, no. 9, pp. 497–501 (Nov. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "42 - 43",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80377-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803774",
key = "tagkey198742"
}
@article{tagkey198743,
title = "An integrated VLSI design environment: B.W. Suter, K.D. Reilly (Dept. of Comput. & Inf. Sci., Alabama Univ., Birmingham, AL, USA) Proc. SPIE Int. Soc. Opt. Eng. (USA) vol. 635, pp. 558-63 (1986) (Applications of Artificial Intelligence III, Orlando, FL, USA, 1–3 April 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "43 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80378-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803786",
key = "tagkey198743"
}
@article{tagkey198743,
title = "CCDTS program in designing CCD device with buried channel: T. Skotnicki (Inst. of Electron Technol., Warsaw, Poland) Electron Technol. (Poland) vol. 18, no. 1-2, pp. 31–41 (1985) [received: 03 Nov. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "43 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80379-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803798",
key = "tagkey198743"
}
@article{tagkey198743,
title = "Defining a new environment for developing VLSI production tests: W. Kumley Electron. Test (USA) vol. 9, no. 9, pp. 61, 63-4, 68 (Sept. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "43 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80380-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803804",
key = "tagkey198743"
}
@article{tagkey198743,
title = "A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs: C. Turchetti, P. Mancini, G. Masetti (Dept. of Electron., Ancona Univ., Italy) IEEE J. Solid State Circuits (USA) vol. SC-21, no. 5, pp. 827-36 (Oct. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "43 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80381-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803816",
key = "tagkey198743"
}
@article{tagkey198743,
title = "A nonlinear method to estimate model parameters of junction field-effect transistors: H. Ikeda, M. Huai-Jian, H. Yamamoto (Dept. of Electron. Engl., Chiba Univ., Japan) IEEE Trans. Instrum. & Meas (USA) vol. IM-35, no. 3, pp. 272-7 (Sept. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "43 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80382-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803828",
key = "tagkey198743"
}
@article{tagkey198743,
title = "Large-signal FET simulation using time domain and harmonic balance methods: T. Brazil (Dept. of Electr. & Electron. Eng., Univ. Coll. Dublin, Ireland), S. EL-Rabaie, E. Choo, V. Fusco, C. Stewart IEE Proc. H (GB) vol. 133, no. 5, pp. 363-7 (Oct. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "43 - 44",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80383-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780383X",
key = "tagkey198743"
}
@article{tagkey198744,
title = "Matching of GaAs power FETs using a large-signal modelling technique: A.J. Holden, B.T. Debney, J.P. King, J.G. Metcalfe, C.H. Oxley (Plessey Res. Ltd., Allen Clark Res. Centre, Towcester, England) IEEE Proc. H. (GB) vol. 133, no. 5, pp. 399–404 (Oct. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "44 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80384-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803841",
key = "tagkey198744"
}
@article{tagkey198744,
title = "Simulation of bipolar high-voltage devices in the neighbourhood of breakdown: Q. Wu, F.E. Cellier (Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA) Math. & Comput. Simulation (Netherlands) vol. 28, no. 4, pp. 271-84 (Aug. 1986)",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "44 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80385-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803853",
key = "tagkey198744"
}
@article{tagkey198744,
title = "Bit-map CAD system of IC design employing BIT-I language: H. Koide, C. Kim, K. Shono (Fac. of Sci. & Technol., Sophia Univ., Tokyo, Japan) Trans. Inst. Electron. & Commun. Engl. Jpn. Part C (Japan) vol. J69C, no. 8, pp. 956-63 (Aug. 1986). In Japanese",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "44 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80386-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803865",
key = "tagkey198744"
}
@article{tagkey198744,
title = "Multiquantity intelligent measurement system for investigating thermal properties of semiconductor devices: K. Kowalski, H. Chacinski, A.J. Wieckowski (Inst. of Radioelectron., Techn. Univ. of Warsaw, Poland) 5th International IMEKO symposium on Intelligent Measurement, Jena, Germany, 10–14 June 1986 (Budapest, Hungary: IMEKO 1986) vol. 2, pp 231-3",
journal = "Microelectronics Journal",
volume = "18",
number = "4",
pages = "44 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80387-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803877",
key = "tagkey198744"
}
@article{John19873,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "3 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80424-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780424X",
author = "John and Butcher"
}
@article{Tadhg19875,
title = "Good CAD usage facilitates ambitious designs",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "5 - 21",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80425-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804251",
author = "Tadhg and Creedon",
abstract = "The paper aims to show that ambitious designs are made possible using computer-aided design (CAD) facilities. This will be illustrated by means of a recent design example. The purpose of the paper is to encourage designers to take the risk of tackling complex designs, and to show how good CAD usage makes it possible to succeed."
}
@article{Cousens198722,
title = "Polymer thick film systems and surface mount techniques",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "22 - 40",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80426-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804263",
author = "A.K. Cousens and J.S. Whitaker",
abstract = "“Addition of surface mounting components to a thick film circuit produces a hybrid. The substrate may be either thick or thin film and with or without passive components already deposited on it” … K.E. Pitt1.
The production of hybrid circuits using thick film pastes based on ceramic and glass binder systems with printed resistors and surface mounted components is well established. The extension of surface mount technologies to the printed circuit board (subtractive process) industries is well under way. New components for surface mounting and new processes for joining these components to circuits are developing. This paper is concerned with innovation in the area of film circuits for hybrid circuit manufacture. Polymer thick films are evaluated in terms of their performance, and also the feasibility of surface mounting components onto polymer thick film circuits to produce hybrids."
}
@article{KY198741,
title = "Punchthrough limits in MOS devices",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "41 - 49",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80427-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804275",
author = "K.Y. and Tong",
abstract = "A two-dimensional analytical model has been developed to predict the minimum channel length of a MOST when punchthrough just starts to occur. Our model shows the dependence of the minimum channel length on all device parameters and biasing voltages, and is verified by numerical simulation results. It can be applied to more flexible scaling of MOS devices using punchthrough as the fundamental limit. Our calculations for the minimum channel length compare favourably with reported process parameters."
}
@article{Fortier198750,
title = "A compensation technique for two-stage CMOS operational amplifiers",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "50 - 57",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80428-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804287",
author = "G.J. Fortier and I.M. Filanovsky",
abstract = "A novel compensation technique is presented. The required compensation is achieved in a separate stage connected in parallel with the output stage. Pole/zero cancellation is used and matching requirements suggest application to system op amps where the load is a pure capacitance of known value. The technique is compared with simple capacitor (pole-splitting) compensation method. The proposed approach provides better phase margin and power supply rejection for the same power dissipation. The circuits which use both approaches to compensation were realised in 5μm CMOS technology and the experimental results are given."
}
@article{tagkey198759,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "59 - 62",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80429-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804299",
key = "tagkey198759"
}
@article{tagkey198763,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "18",
number = "3",
pages = "63 - 64",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80430-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804305",
key = "tagkey198763"
}
@article{John19873,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "3 - 4",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80402-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804020",
author = "John and Butcher"
}
@article{MT19875,
title = "Modelling the DC characteristics of base-driven differential pairs",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "5 - 13",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80403-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804032",
author = "M.T. and Abuelma'atti",
abstract = "A formula is presented for the current/voltage characteristic of the base-driven differential pair. Also, a closed-form expression is derived for the output signal of a base-driven differential pair excited by a multi-sinusoidal signal."
}
@article{A198715,
title = "Electrical resistivity and surface profile due to Al/Si/Ti reaction kinetics on an oxidised silicon wafer",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "15 - 19",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80404-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804044",
author = "A. and Singh",
abstract = "The electrical resistivity and surface profile due to Al/Si/Ti reaction kinetics on an oxidised silicon wafer are studied by annealing the structure in vacuum and forming gas at 450°C for up to 60 mins. It is found that Si in Al retards interdiffusion in the Al/Ti system and the reaction rate is halved. A Ti underlayer of 50A thickness gives a smooth surface with acceptable resistivity for device fabrication. X-ray diffraction and RBS measurements support these findings."
}
@article{Kassabov198721,
title = "UV radiation effects of argon plasma on Si−SiO2 structures",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "21 - 27",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80405-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804056",
author = "J. Kassabov and E. Atanassova and D. Dimitrov and E. Goranova",
abstract = "Radiation damage is investigated in Si−SiO2 structures with thin (34 nm) SiO2 film exposed to the action of the ultraviolet component of a “soft” argon plasma. To obtain information about the electrical properties of the structures, inversion channel current-voltage characteristics are measured. It is found that low energy ultraviolet readiation (up to 8.7 eV) from the low-temperature argon plasma creates shallow acceptor-like interface states. As a result of the screening effect of the trapped electrons in these states a significant increase of the channel mobility is observed. It is assumed that the plasma-induced defects are connected with breaking of weak and strained bonds in the oxide and at the Si−SiO2 interface. The temperature dependence of the channel mobility is interpreted in terms of several scattering mechanisms."
}
@article{Bozic198729,
title = "Solid state two-wire to four-wire conversion",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "29 - 33",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80406-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804068",
author = "S.M. Bozic and I. Holle",
abstract = "Two to four-wire conversion is considered in terms of the standard hybrid transformer and compared with a recently proposed alternative method based on switched capacitors. The authors have examined both and found that the switched capacitor hybrid, in spite of being more complex, offers advantages over the hybrid transformer. However, the main advantage of the switched capacitor solution is its suitability for solid-state realization."
}
@article{R198735,
title = "Novel insensitive functional immittance conversion with voltage/current followers",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "35 - 38",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80407-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780407X",
author = "R. and Nandi",
abstract = "Precise and canonic generation of the immitance converter function Yi=Y0 Y1/Y2 by utilising voltage/current follower devices is described. Using the various port voltages/admittance relations of the functional block, some subsequent network synthetic applications have been suggested. All derived parameters have been shown to be active insensitive—a desirable feature for integration."
}
@article{Singh198739,
title = "LIF investigations of the surface chemistry in the dry processing of semiconductor devices",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "39 - 47",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80408-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804081",
author = "O.N. Singh and H.J. Hopman",
abstract = "Laser Induced Fluorescence characterisation of the molecular species in a “High Flux Reactive Ion Etching Magnetic Multiple Reactor” is described. Selection of the bands for LIF study of the different species expected to be formed in the reactor has been made. A methodology for the above mentioned investigation is proposed."
}
@article{Sinha198748,
title = "SEM study of etching of GaAs substrates in the H3PO4:H2O2:H2O system",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "48 - 51",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80409-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804093",
author = "M.P. Sinha and S. Mahapatra",
abstract = "SEM observations are reported with the aim of studying the etching characteristics of GaAs substrates in H3PO4:H2O2:H2O systems. The surface morphology is shown to vary extensively with the etchant composition and etching time."
}
@article{tagkey198752,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "52 - 56",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80410-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780410X",
key = "tagkey198752"
}
@article{Gwilym198757,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "57 - 59",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80411-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804111",
author = "Gwilym and Roberts"
}
@article{tagkey198760,
title = "Hole and electron mobilities in heavily doped silicon: comparison of theory and experiment: Herbert S. Bennett Solid-St. Electron. 26 (12), 1157 (1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "60 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80412-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804123",
key = "tagkey198760"
}
@article{tagkey198760,
title = "Real time sputter deposition monitoring using glow discharge mass spectroscopy: B.F.T. Bolker Solid St. Technol. 115 (December 1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "60 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80413-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804135",
key = "tagkey198760"
}
@article{tagkey198760,
title = "Manifestations of deep levels point defects in GaAs: G.M. Martin and S. Makram-Ebeid Acta Electron. 25 (2), 133 (1983). In French",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "60 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80414-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804147",
key = "tagkey198760"
}
@article{tagkey198760,
title = "Electrical design of a high speed computer packaging system: Evan E. Davidson IEEE Trans. Components Hybrids Mfg Technol. Chmt-6(3), 272 (September 1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "60 - 61",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80415-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804159",
key = "tagkey198760"
}
@article{tagkey198761,
title = "Design of a high performance DIP-like pin array package for logic devices: Cecil W. Deisch, John F. Gogal and John W. Stafford IEEE Trans. Components Hybrids Mfg Technol. Chmt-6(3), 305 (September 1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "61 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80416-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804160",
key = "tagkey198761"
}
@article{tagkey198761,
title = "A data-base for IC mask making: N.N. Kundu, S.N. Gupta, A.K. Bagchi, D.R. Nagpal, A.V. Ramani and W.S. Khokle Microelectron. J. 14 (5), 43 (1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "61 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80417-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804172",
key = "tagkey198761"
}
@article{tagkey198761,
title = "IC wafer fab economics and lithography equipment selection: the inextricable link: Peter Diseassa Solid. St. Technol. 155 (December 1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "61 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80418-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804184",
key = "tagkey198761"
}
@article{tagkey198761,
title = "Electron-beam recrystallised polysilicon on silicon dioxide: Tomoyasu inque and Kenji Shibata Microelectron. J. 14 (6), 74 (1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "61 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80419-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804196",
key = "tagkey198761"
}
@article{tagkey198761,
title = "Automated measurement system for the investigation of surface state distribution: T.E. Price and L.C. Kwan Microelectron. Reliab. 23 (3), 555 (1983)",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "61 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80420-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804202",
key = "tagkey198761"
}
@article{Mike198762,
title = "Available from: Prentice/Hall International Brian K. Jones, ,Electronics for experimentation & Research (March 1986) .",
journal = "Microelectronics Journal",
volume = "18",
number = "2",
pages = "62 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80421-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287804214",
author = "Mike and Chapple"
}
@article{tagkey1987CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "CO2 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80357-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803579",
key = "tagkey1987CO2"
}
@article{John19873,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "3 - ",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80358-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803580",
author = "John and Butcher"
}
@article{BengtArne19875,
title = "On MOS transistor model accuracy",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "5 - 11",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80359-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803592",
author = "Bengt-Arne and Molin",
abstract = "One of the main topics in circuit simulation is modeling the MOS transistor. The development of new models is focused on the accuracy of a single transistor. But when simulating larger circuits, the single transistor accuracy may not be relevant. The simulation accuracy of the global circuit performance could be a better measure of model accuracy.
This paper presents an analysis of MOS model accuracy with respect to global circuit performance. A test chip is simulated with one simple model and one complicated. The results are compared with measurements made on real circuits. The main issues for the comparison are accuracy and time consumption."
}
@article{Martinez198713,
title = "A variational model for transistors",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "13 - 24",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80360-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803609",
author = "A. Martinez and M. Lozano and J. Barquillas and A. Carlosena",
abstract = "This paper presents a linear variational model for transistors in their typical amplifying region, valid for BJTs as well as FETs.
The model allows one to determine the most important parameters of analog electronic systems: small-signal behaviour, thermal drift and effects of device mismatches."
}
@article{MuhammadTaher198725,
title = "Modelling DC characteristics of lambda transistors for CAD",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "25 - 28",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80361-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803610",
author = "Muhammad Taher and Abuelma'atti",
abstract = "A simple empirical equation is proposed to represent the current/voltage characteristics of lambda transistors. The parameters of this model can be easily extracted from separate regions in the device characteristics."
}
@article{Dwivedi198729,
title = "The development of a fully implanted 3 micron poly-gate NMOS technology — (Part 1)",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "29 - 33",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80362-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803622",
author = "V.K. Dwivedi and G.S. Virdi and S. Gupta and W.S. Khokle",
abstract = "Initial efforts have been made to develop a fully implanted 3 micron poly-gate NMOS technology for fabricating an 8-bit binary counter chip. The MOS transistors in the circuit, initially designed for 8 micron gate length were scaled down to 3 micron by over-exposure and over-etching techniques. The process consists of a double boron ion implantation. A shallow boron implant was used to raise the threshold voltage, and a second, deeper boron implant was used to increase the punch-through voltage between the source and drain. The process is especially beneficial for maintaining low junction capacitance and low threshold substrate sensitivity of the high resistivity substrates in the case of short channel devices and for high speed logic circuit applications. Results of measurements on MOS transistor test structures are presented in the paper."
}
@article{Bober198735,
title = "Further studies of the interactions between thick film resistors and dielectrics",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "35 - 48",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80363-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803634",
author = "Barbara Bober and Keith Pitt",
abstract = "Previous work has demonstrated that there is an interchange of constituents between the films when thick films are fired on dielectric layers. This paper extends the study from ruthenium dioxide based resistors to those based on barium ruthenate. It shows that, here also, the reactions are much less marked on the filled glaze DP 9950 than on the crystallising DP 9429 and that electrical changes have a similar relationship. Plots are given of the change of chemical constitution over the cross sections of several different resistors/dielectric combinations."
}
@article{Bucknall198749,
title = "Reactive ion etching of direct-write metallisation patterns",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "49 - 55",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80364-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803646",
author = "Ruth E. Bucknall and Peter J. Astell-Burt"
}
@article{tagkey198757,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "57 - 60",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80365-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803658",
key = "tagkey198757"
}
@article{tagkey198761,
title = "Microelectronics into the 90's",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "61 - 62",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80366-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928780366X",
key = "tagkey198761"
}
@article{tagkey198763,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "18",
number = "1",
pages = "63 - 64",
year = "1987",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(87)80367-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269287803671",
key = "tagkey198763"
}
@article{John19863,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "3 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80158-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801586",
author = "John and Butcher"
}
@article{Sarkar19865,
title = "Development and optimisation of a metal lift-off process",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "5 - 13",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80159-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801598",
author = "M. Sarkar and A. Vijayakumar and D. Sarkar",
abstract = "A simple technique of achieving a suitable inward slope of the photoresist pattern edges has been developed and the process of aluminium deposition followed by its lifting off from unwanted regions has been successfully performed for lines and spaces of the order of 2.5 micron. Aluminium deposition of various thicknesses and angles has been carried out and their relative features have been discussed and supported by SEM pictures."
}
@article{Kundu198614,
title = "Computation of optical image profile for lithography and linewidth measurement",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "14 - 23",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80160-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801604",
author = "N.N. Kundu and B.P. Mathur and S.N. Gupta",
abstract = "Optical microlithography for VLSI requires that the imaging process be well characterised and understood. Optical imaging is largely by projection such as in step-and-repeat cameras in mask making and projection aligners and direct steppers in wafer exposure systems. Image formation through a lens has been simulated in the literature in order to understand and predict the geometries that will be available on photoresist layers. The following assumptions are normally made regarding the exposure system: (a) the object is a mask containing a grating of a given period and (b) the opaque areas of the grating have zero transmittance and zero thickness. Such an assumption is valid for mask made of dark chrome for example. However, finite thickness and transmittance of the film can give rise to the differences in the computed image.
A computer programme has been developed which computes the image profile taking into consideration the finite thickness of a film such as chrome or iron oxide. The illumination has been assumed to be partially coherent and the optics have been assumed to be diffraction limited. Intensity profiles for various linewidths less than 5 microns were calcualted. These were compared with intensity profiles obtained by SAMPLE which does not take into consideration finite transmittances of chrome or iron oxide layers. It has been found that both the linewidths and edge slopes of the image are quite different and the error can be as large as. 25 micron. The results of these computations are presented in this paper."
}
@article{A198624,
title = "Nickel silicide formation by reaction of filament evaporated nickel with silicon substrate",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "24 - 29",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80161-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801616",
author = "A. and Singh",
abstract = "Nickel silicide formation by reaction of tunsten filament evaporated nickel film with silicon substrate in flowing commercial nitrogen at temperatures in the range of 400 to 900°C has been investigated. The oxygen contained in the nickel film and in the nitrogen gas is found to greatly slow down/inhibit the silicidation process. The silicidation is found to restart only after removing the impurities chemically and subjecting the wafers once again to the annealing schedule as before. The sheet resistance is observed to decrease with increase of annealing temperature and time. This is attributed to the evolution of different silicide phases during annealing. The barrier height is found not to depend on silicide phases indicating that the reaction between silicon and nickel occurs during deposition at room temperature. A thin layer of SiO2 is also observed to grow on top of nickel silicide. Various applications to VLSI are indicated."
}
@article{B198630,
title = "Cleaning surface mounted component assemblies",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "30 - 34",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80162-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801628",
author = "B. and Lambert"
}
@article{M198635,
title = ",Microcircuit Production Technology (June 1986) .",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "35 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80163-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680163X",
author = "M. and Howson"
}
@article{tagkey198636,
title = "Research and development",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "36 - 40",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80164-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801641",
key = "tagkey198636"
}
@article{tagkey198641,
title = "Microelectronics into the 90's",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "41 - 43",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80165-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801653",
key = "tagkey198641"
}
@article{Gwilyn198645,
title = "Parliamentary report",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "45 - 46",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80166-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801665",
author = "Gwilyn and Roberts"
}
@article{tagkey198647,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "47 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80167-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801677",
key = "tagkey198647"
}
@article{tagkey198648,
title = "Classified index to articles—Vol. 17",
journal = "Microelectronics Journal",
volume = "17",
number = "6",
pages = "48 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80168-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801689",
key = "tagkey198648"
}
@article{John19863,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "3 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80129-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680129X",
author = "John and Butcher"
}
@article{MuhammadTaher19865,
title = "Modelling DC characteristics of heterostructure bipolar junction transistors",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "5 - 8",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80130-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801306",
author = "Muhammad Taher and Abuelma'atti",
abstract = "A simple empirical equation is presented to relate, the collector current to the collector-emitter voltage and base current of the heterostructure bipolar junction transistor (HBJT). This equation cover the entire Ic/VCE characteristics. The parameters of this model can easily be extracted from separate regions in the device characteristics."
}
@article{MalcolmR19869,
title = "General purpose intelligent sensors",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "9 - 14",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80131-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801318",
author = "Malcolm R. and Haskard",
abstract = "Many sensors available today do not fully utilize the potential of microelectronic fabrication techniques. Further, the output from most sensors is analogue and therefore incompatible with the digital microprocessor, today's key element in instrument and control systems. This paper outlines the approach taken to produce flexible sensors that interface directly to a microprocessor and are fabricated using standard microelectronic production processes."
}
@article{Kassabov198615,
title = "Inversion electron mobility in Si−SiO2 structures oxidized at low and high temperatures",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "15 - 22",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80132-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680132X",
author = "J. Kassabov and D. Dimitrov and J. Koprinarova",
abstract = "By measuring the inversion currents, two types of Si−SiO2 structure are studied with the silicon dioxide grown in dry oxygen (H2O below 1 ppm) at two temperatures (850°C and 1050°C). Inversion electron mobility and charges at the Si−SiO2 interface for both types of oxide are strongly influenced by the oxidation temperature. The degrading effect of low temperature oxidation is explained by a higher level of strain at the Si−SiO2 interface. It is shown that the low temperature post-oxidation N2 anneal is insufficient and the electrical properties of low temperature oxide samples are inferior to those of the high temperature oxides."
}
@article{Lee198623,
title = "Temperature dependence of carrier transport in polycrystalline silicon",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "23 - 32",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80133-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801331",
author = "J.Y. Lee and F.Y. Wang",
abstract = "The carrier transport in polycrystalline silicon was studied over a wide temperature range, from 20K to 300K, and for a number of dopant concentrations ranging from 1.3×1018/cm3 to 2.6×1018/cm3. A grain boundary carrier trapping model was used to explain the experimental results in this work. Carrier transport by thermionic emision over the grain boundary potential barrier and thermionic field emission through the potential barrier were both included. Special attention was paid to carrier freezeout at low temperatures. The potential barrier height, VB, was shown to be an increasing function of temperature and a decreasing function of dopant concentration. The relative importance of thermionic emission and thermionic field emission was discussed."
}
@article{M198633,
title = "274 pages, Price: £27.50 Available from: Adam Hilger, Techno House, Redcliffe Way, Bristol, B51 6NX, England C. Jesshope, W. Moore, ,Wafer Scale Integration (July 1986) .",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "33 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80134-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801343",
author = "M. and Howson"
}
@article{tagkey198635,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "35 - 36",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80135-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801355",
key = "tagkey198635"
}
@article{tagkey198637,
title = "The Eureka joint projects list",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "37 - 39",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80136-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801367",
key = "tagkey198637"
}
@article{tagkey198640,
title = "Joint ventures",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "40 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80137-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801379",
key = "tagkey198640"
}
@article{tagkey198641,
title = "CHMOS improves system efficiency: Joseph Altnether Electron. Power, 57 (January 1984)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "41 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80138-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801380",
key = "tagkey198641"
}
@article{tagkey198641,
title = "Amorphous BN films produced in a double-plasma reactor for semiconductor applications: W. Schmolla and H.L. Hartnagel Solid St. Electron. 26 (10), 931 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "41 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80139-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801392",
key = "tagkey198641"
}
@article{tagkey198641,
title = "Printed board assembly cleanliness—standards, practice and reliability considerations: J.R. Taylor Circuit World 10 (2), 4 (1984)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "41 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80140-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801409",
key = "tagkey198641"
}
@article{tagkey198641,
title = "Lifetime and drift velocity for electromigration in sputtered Al films, multilayers and alloys: B. Grabe and H.U. Shreiber Solid St. Electron. 26 (10), 1023 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "41 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80141-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801410",
key = "tagkey198641"
}
@article{tagkey198642,
title = "Low temperature processed MOSFET's using laser recrystalized polycrystalline silicon films: Han-Sheng Lee Solid St. Electron 26 (11), 1123 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80142-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801422",
key = "tagkey198642"
}
@article{tagkey198642,
title = "Facing the headaches of early failures: a state-of-the-art review of burn-in decisions: Way Kuo and Yue Kuo Proc. IEEE 71 (11), 1257 (November 1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80143-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801434",
key = "tagkey198642"
}
@article{tagkey198642,
title = "Thermal management of electronic packages: R.E. Simons Solid St. Technol. 131 (October 1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80144-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801446",
key = "tagkey198642"
}
@article{tagkey198642,
title = "Trends in packaging and interconnection of integrated circuits: A.G. Saunders Microelectron. J 12 (1), (1981)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80145-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801458",
key = "tagkey198642"
}
@article{tagkey198642,
title = "The measurement and sources of substrate heat flux encountered with magnetron sputtering: Walter Class and Robert Hieronyml Solid St. Technol. 55 (December 1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80146-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680146X",
key = "tagkey198642"
}
@article{tagkey198642,
title = "Diffusivity and growth rate of silicon in solid-phase epitaxy with an aluminium medium: Hua Qingheng, Edward S. Yang and Hosrof Izmirliyan Solid St. Electron. 25(11), 1187 (1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80147-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801471",
key = "tagkey198642"
}
@article{tagkey198643,
title = "Microelectronic ball-bond shear test—a critical review and comprehensive guide to its users: George G. Harman Solid St. Technol. 186 (May 1984)",
journal = "Microelectronics Journal",
volume = "17",
number = "5",
pages = "43 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80148-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801483",
key = "tagkey198643"
}
@article{John19863,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "3 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80109-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801094",
author = "John and Butcher"
}
@article{Khan19865,
title = "Realization of MOS-compatible multifunctional active-C biquadratic filter for high frequency applications",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "5 - 10",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80110-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801100",
author = "I.A. Khan and M.T. Ahmed",
abstract = "Abstract state-variable technique is employed in the realization of a multifunctional active-C biquadratic filter. The basic block is shown to give simultaneously low-pass (LP), band-pass (BP) and band-elimination (BE) responses. The use of only two operational amplifiers (OA's) and ratioed capacitors makes the circuit highly suitable for MOS implementation. The effects of circuit parasitics and excess phase introduced by the OA's are shown to be accountable for in the design. Experimental results show good agreement with the theory."
}
@article{Bafleur198611,
title = "Reliability assessment of integrated circuits through reverse engineering techniques",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "11 - 26",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80111-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801112",
author = "M. Bafleur and J. Buxo",
abstract = "Scaling down the dimensions of an integrated circuit should be carried out with two main concerns in mind in order to keep high reliability standards:u
- better quality control throughout the fabrication procedure;
- new circuit architectures compatible with the constraints that prevail at such a high integration level.
Reverse engineering techniques can be very useful in order to face these challenges. In this paper, it is shown that the two main techniques: de-layering and microsectioning, are very efficient in controlling the quality of the technology of a circuit.
The paper also shows how the lifetime of a circuit showing a defect can be estimated.
In addition, examples of circuits that have been reverse engineered in order to obtain the electrical schematic are described. A particular emphasis is given to the circuit information which is most helpful to the designer and which is obtained with such a technique."
}
@article{NR198627,
title = "Keeping your IC chips cooler using infrared soldering",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "27 - 34",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80112-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801124",
author = "N.R. and Cox"
}
@article{RR198635,
title = "The reliability of encapsulated and unencapsulated thick-film hybrid microcircuits",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "35 - 48",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80113-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801136",
author = "R.R. and Sutherland",
abstract = "Both the reliability and the cost of hybrid microcircuits depend on the method of encapsulation chosen. This paper considers the effect of the overall hybrid encapsulation on the failure mechanisms of the hybrid component parts (conductors, crossovers, resistors, add-on chip capacitors, and add-on semiconductors). The overall reliability of unencapsulated hybrids is then compared with the reliability of those encapsulated with a plastic coating, or encapsulated in hermetic metal cans or Integral Substrate Packages. The expensive hermetic encapsulations have not been found to be necessarily more reliable, and unencapsulated hybrids have been chosen as the most cost-effective solution for many British Telecom applications."
}
@article{StephenD198649,
title = "Effects of reverse bias failure on surface mounted tantalum capacitors",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "49 - 53",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80114-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801148",
author = "Stephen D. and Linam"
}
@article{tagkey198655,
title = "Laser and electron beam scanning of GaAs FETS: W. D. Edwards and R. F. Haythornthwaite Microelectron. Reliab. 22 (4), 735 (1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "55 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80115-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680115X",
key = "tagkey198655"
}
@article{tagkey198655,
title = "CVD Tungsten interconnect and contact barrier technology for VLSI: Nicholas E. Miller and Israel Beinglass Solid St. Technol., 85 (December 1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "55 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80116-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801161",
key = "tagkey198655"
}
@article{tagkey198655,
title = "Alteration of diffusion profiles in semiconductors due to p-n junctions: P.J. Anthony Solid St. Electron., 25 (12), 1171 (1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "55 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80117-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801173",
key = "tagkey198655"
}
@article{tagkey198655,
title = "Implantation through a window with medium to high energy ions: A.G. Lutsch and D. N. Oliver Microelectron. J. 14 (1), 21 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "55 - 56",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80118-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801185",
key = "tagkey198655"
}
@article{tagkey198656,
title = "UV exposure, systems and control: Ted. C. Bettes Semiconductor Int., 83 (April 1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80119-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801197",
key = "tagkey198656"
}
@article{tagkey198656,
title = "The role of germanium is evaporated Au-Ge OHMIC contacts to GaAs: A. Iliadis and K.E. Singer Solid St. Electron, 26 (1), 7 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80120-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801203",
key = "tagkey198656"
}
@article{tagkey198656,
title = "Laser processing of semiconductor silicon. Part II: Thomas J. Magee and T. Keith McNAB Solid St. Technol. 101 (December 1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80121-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801215",
key = "tagkey198656"
}
@article{tagkey198656,
title = "Control of Borron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices: A. Srivastava and J.T. Boyd Microelectron. Reliab. 23 (1), 179 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80122-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801227",
key = "tagkey198656"
}
@article{tagkey198656,
title = "Positive resist material requirements for VLSI device fabrication. Part I: David J. Elliott Solid St. Technol. 116 (May 1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80123-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801239",
key = "tagkey198656"
}
@article{tagkey198656,
title = "Deposition equipment: Aaron D. Weiss Semiconductor Int. 72 (November 1982)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80124-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801240",
key = "tagkey198656"
}
@article{tagkey198656,
title = "An ion milled coplanar SOS technology: Alan C. Sharp Microelectron. J. 14 (6), 13 (1983)",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "56 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80125-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801252",
key = "tagkey198656"
}
@article{tagkey198657,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "57 - 58",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80126-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801264",
key = "tagkey198657"
}
@article{tagkey198661,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "61 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80127-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801276",
key = "tagkey198661"
}
@article{tagkey198662,
title = "Microelectronics into the 90's",
journal = "Microelectronics Journal",
volume = "17",
number = "4",
pages = "62 - 64",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80128-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801288",
key = "tagkey198662"
}
@article{David19863,
title = "Guest editorial: Continuing the Assembler's story",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "3 - 4",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80169-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801690",
author = "David and Boswell"
}
@article{Garner19865,
title = "Surface mount packaging",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "5 - 13",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80170-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801707",
author = "R. Garner and D. Taylor"
}
@article{David198614,
title = "The connector/pcb interface key to success in surface mounting of connectors",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "14 - 20",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80171-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801719",
author = "David and Brearley Jr."
}
@article{tagkey198621,
title = "Handbook of microelectronics packaging and interconnection techologies: Edited by N. Sinnadurai ISBN 901150 19 3 Price £42.00/$73.00 Pages-274+xiii; Tables-32; Figures-220; References-143; Size-23×15 cm",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "21 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80172-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801720",
key = "tagkey198621"
}
@article{tagkey198621,
title = "Thiermal design of electronic circuit boards and packages: by D. J. Dean ISBN 901150 18 5 Price £63.00/$112.00 Pages-Approx. 400; Figures-131; References-73; Size-23×15 cm",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "21 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80173-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801732",
key = "tagkey198621"
}
@article{RobertJ198622,
title = "Surface mount manufacturing technology quality and automation",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "22 - 35",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80174-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801744",
author = "Robert J. and Rowland"
}
@article{MaxwellE198636,
title = "SMT—ignored problems",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "36 - 41",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80175-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801756",
author = "Maxwell E. and Peel"
}
@article{CharlesL198642,
title = "Surface mounted devices: advantages and issues",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "42 - 47",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80176-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801768",
author = "Charles L. and Hutchins"
}
@article{tagkey198648,
title = "Key players in the Japanese electronics industry: August 1985, 550 pages Price: Y98,000 (Japan), US$400.00/£330.00 (Overseas, including airmail postage)",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "48 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80177-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680177X",
key = "tagkey198648"
}
@article{tagkey198648,
title = "Business ratio reports on the electronics industry: Published by: ICC Business Ratios (a division of ICC Information Group Ltd.), 28–42 Banner Street, London EC1Y 3QE Prices: £121 each *indicates £137",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "48 - 49",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80178-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801781",
key = "tagkey198648"
}
@article{tagkey198651,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "51 - 56",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80179-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801793",
key = "tagkey198651"
}
@article{tagkey198657,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "57 - 58",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80180-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680180X",
key = "tagkey198657"
}
@article{tagkey198660,
title = "Microelectronics into the 90's: Government supported R&D in Japan",
journal = "Microelectronics Journal",
volume = "17",
number = "3",
pages = "60 - 64",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80181-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801811",
key = "tagkey198660"
}
@article{David19863,
title = "Guest Editorial",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "3 - 4",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80001-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800015",
author = "David and Boswell"
}
@article{Glenda19865,
title = "The impact of surface mount technology on electronics manufacturing",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "5 - 11",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80002-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800027",
author = "Glenda and Derman",
abstract = "This major multiclient study from Gnostic Concepts covers the entire topic of the impact of surface mount technology and includes detailed analyses of components, packages, substrates, OEM requirements, manufacturing trends, and important business issues in a thorough, concise manner. This comprehensive study examines the factors involved in the selection and implementation of surface mount technology, as it affects suppliers and materials, substrates, components, equipment vendors, and original equipment manufacturers in the electronics industry. Forecasts for surface mount components are in terms of dollar value, quantity, price, and rate of penetration."
}
@article{tagkey198612,
title = "Surface mounted semiconductors: A NEW report forecasting the availability of SM Components and Board Assembly Equipments from the leading edge suppliers",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "12 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80003-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800039",
key = "tagkey198612"
}
@article{Gunther198613,
title = "Designing and manufacturing Surface Mount Assemblies",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "13 - 20",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80004-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800040",
author = "Elizabeth Gunther and Charles L. Hutchins and Paul Peterson",
abstract = "Summary
Surface mount assembly techniques provide a significant advantage at cost, volume, and reliability over the current “thru-hole” technology. These are well documented and the manufacturing equipment and related products are becoming readily available to support new production lines. Also, as experience grows, improved products and ideas are developed from the cooperative efforts of vendors and users in standardization organizations and in problem solving sessions. The broad selection of package types and product technologies available now are sufficient to begin conversion of existing electronic system products for size reduction or feature enhancement. Definitely, new products should be designed with surface mount technology."
}
@article{Sinnadurai198621,
title = "Assessing the joints in Surface-Mounted assemblies",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "21 - 31",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80005-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800052",
author = "Nihal Sinnadurai and Kenneth Cooper and John Woodhouse",
abstract = "With the advent of surface-mounting technology, an apparent problem that has received much attention is the potential failure of solder joints between microcomponents and printed circuit boards. One tequnique used to assess such joints is to subject the assemblies to thermal cycling over a wide temperature range. The validity of the method has, however, not been proven and there are serious reservations about its relevance when considering: the mechanical and thermal properties of solders and other materials associated with the assemblies, the temperature excursions and their rates likely to be encountered in real life, and the more probable problems due to intermittent power dissipation in surface-mounted components.
Thus, thermal cycling may prove to be useful only in process development and quality testing. In the event, if the object is to subject the joint to cycling strain, then a more rapid and therefore more efficient test has been devised whereby mechanical cycling is employed to simulate the effects of thermal cycling."
}
@article{tagkey198632,
title = "Handbook of microelectronics packaging and interconnection technologies: Edited by N. Sinnadurai ISBN 901150 19 3 Price £42.00/$73.00 Pages-274 + xiii; Tables-32; Figures-220; References-143; Size-23×15cm",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "32 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80006-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800064",
key = "tagkey198632"
}
@article{tagkey198632,
title = "Thermal design of electronic circuit boards and packages: by D. J. Dean ISBN 901150 18 5 Price £63.00/$112.00 Pages-Approx. 400; Figures-131; References-73; Size-23×15 cm",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "32 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80007-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800076",
key = "tagkey198632"
}
@article{Mitch198633,
title = "Surface mount technology experience: Problems and solutions",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "33 - 36",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80008-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800088",
author = "Mitch and Davis",
abstract = "Surface mount technology (SMT) was pioneered in the 1970's at RCA Moorestown in the Hybrid Engineering Lab. During the past two years a full-production SMT facility has been established to produce improved Standard Electronic Modules (ISEMs) for an advanced Navy shipboard radar system.
This paper describes the major materials and process and equipment options which were chosen for the new SMT manufacturing facility, as well as some of the operational problems and solutions that developed during start-up and pilot production."
}
@article{SL198637,
title = "B. Randell, P.C. Treleaven,Editors, ,VLSI Architecture (1983) Prentice Hall International.",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "37 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80009-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680009X",
author = "S.L. and Hurst"
}
@article{Richard198637,
title = "s2",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "37 - 38",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80010-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800106",
author = "Richard and Bayford"
}
@article{M198638,
title = "Surface Mounted Semiconductors",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "38 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80011-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800118",
author = "M. and Howson"
}
@article{B198639,
title = "The Korean Semiconductor Industry",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "39 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80012-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680012X",
author = "B. and Morgan"
}
@article{tagkey198640,
title = "Current titles",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "40 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80013-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800131",
key = "tagkey198640"
}
@article{tagkey198641,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "41 - 44",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80014-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800143",
key = "tagkey198641"
}
@article{tagkey198644,
title = "Semiconductor evaluation techniques",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "44 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80015-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800155",
key = "tagkey198644"
}
@article{tagkey198645,
title = "Final version: C. Cohen Pers. Comput. World vol. 8, no. 12, Dec. 1985",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "45 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80016-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800167",
key = "tagkey198645"
}
@article{tagkey198645,
title = "Can computers crack the language Barrier: M. Jones Business Comput. Commun. Oct. 1985",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "45 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80017-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800179",
key = "tagkey198645"
}
@article{tagkey198645,
title = "Amstrad PCW 8256: Anon Which Comput. Nov. 1985",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "45 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80018-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800180",
key = "tagkey198645"
}
@article{tagkey198646,
title = "Sophisticated page makeup gets personal: J. Canuoto Comput. Graphics World vol. 8, no. 9, Sept. 1985",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "46 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80019-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800192",
key = "tagkey198646"
}
@article{tagkey198646,
title = "Reading and writing the electronic book: N. Yankelovich, N. Megrowitz and A. Van Dam Computer vol. 18, no. 10, Oct. 1985",
journal = "Microelectronics Journal",
volume = "17",
number = "2",
pages = "46 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80020-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800209",
key = "tagkey198646"
}
@article{tagkey1986CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "CO2 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80096-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800969",
key = "tagkey1986CO2"
}
@article{JohnB19863,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "3 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80097-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800970",
author = "John B. and Butcher"
}
@article{DavidRuimy19865,
title = "Serial peripheral interfacing techniques",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "5 - 14",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80098-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800982",
author = "David Ruimy and Gonzales"
}
@article{JR198615,
title = "The physical limitations of integration and size reduction in semiconductors",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "15 - 25",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80099-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286800994",
author = "J.R. and Barker",
abstract = "Many of the established concepts of device and integrated circuit technology are beginning to breakdown as VLSI geometries with sub-micron dimensions are explored. Fabrication methods suggest that structures can be built to geometries in the 100 regime, but physical limitations intervene to prevent straightforward down-scaling of conventional device and system concepts from bulk to molecular scales."
}
@article{Berlicki198627,
title = "Power-temperature dependence of elements in hybrid circuits",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "27 - 33",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80100-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801008",
author = "T.M. Berlicki and E.L. Prociów",
abstract = "This paper presents a simple method of approximate calculation of the thermal conductivity for a hybrid circuit element. The method is to calculate the effective surface area of the element and to multiply it by the thermal conductivity coefficient. The effective area is equal to the sum of the element surface area and the surrounding element margin which has a constant width. The margin width depends on the thermal convection coefficient, on the thermal conductance of the substrate and on the substrate thickness-d."
}
@article{Flore198635,
title = "Thick film pressure transducers",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "35 - 41",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80101-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928680101X",
author = "A. Di Flore and M.R. Haskard",
abstract = "Flexible plastic membranes with thick film components printed on them can be used to produce inexpensive miniature pressure transducers. Two methods of sensing diaphragm movement were investigated. Firstly, carbon polymer resistors were printed onto the membrane and resistance changes due to the piezo resistance effect noted. Secondly, a conductive plate was printed onto the membrane to form one plate of a capacitor. Any movement due to pressure was detected as a capacitive changes. Both systems had integrated hybrid electronics to give a digital output proportional to pressure. The final prototype units investigated had diaphragms 4mm in diameter and were linear up to pressures of 20 kPa."
}
@article{A198642,
title = "Edited by ,Data Communications in the ISDN Era Price: US$33.25/Dfl.90.00 Y. Perry, Advanced Technology Ltd.,Editors, Proceedings of the IFP TC 6 International Conference on Data Communications in the ISDN Era Tel-Aviv, Israel (4–5th March 1985) Elsevier Science Publishers.",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80102-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801021",
author = "A. and Fletcher"
}
@article{M198642,
title = "Microprocessor Systems Engineering Published by: Addison-Wesby Publishers Author: J. Ferguson 303 Pages Price: £12.95",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "42 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80103-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801033",
author = "M. and Howson"
}
@article{tagkey198643,
title = "Research and Development",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "43 - 45",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80104-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801045",
key = "tagkey198643"
}
@article{tagkey198647,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "47 - 50",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80105-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801057",
key = "tagkey198647"
}
@article{tagkey198651,
title = "Classified index to articles—Vol. 16",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "51 - 53",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80106-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801069",
key = "tagkey198651"
}
@article{tagkey198654,
title = "Microelectronics into the 90's",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "54 - ",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80107-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801070",
key = "tagkey198654"
}
@article{tagkey198654,
title = "ESPRIT",
journal = "Microelectronics Journal",
volume = "17",
number = "1",
pages = "54 - 64",
year = "1986",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(86)80108-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269286801082",
key = "tagkey198654"
}
@article{John19853,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "3 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80129-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801294",
author = "John and Butcher"
}
@article{Awatar19854,
title = "Sputtered molybdenum—polysilicon interaction for interfacial silicon dioxide growth",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "4 - 6",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80130-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801300",
author = "Awatar and Singh",
abstract = "In the present study the sputtered molybdenum—polysilicon interaction for interfacial silicon oxide growth is investigated. It is found that interfacial silicon dioxide growth is possible even in the absence of an M0O2 layer on the molybdenum film. This is attributed to the oxygen impurity present in the sputtered molybdenum film. The oxygen impurity is believed to react with hydrogen at high temperature thus generating the oxidant species (H2O) and resulting in thin silicon dioxide film growth at the molybdenum-polysilicon interface. For thicker interfacial silicon dioxide growth, preoxidation of the molybdenum is found to be essential."
}
@article{Kundu19857,
title = "Software aid for mask shop",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "7 - 18",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80131-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801312",
author = "N.N. Kundu and S.N. Gupta",
abstract = "Mask making is a very important part of integrated circuit fabrication. There has been a general trend towards a higher degree of automation in mask making. With the advent of VLSI, there is a need for facilities which can perform more complex jobs and need a minimum of user intervention. For many environments, it is important that the mask making facility be very flexible so that it can cater for a variety of jobs with a minimum of effort. In this paper we report a computer program which was developed to simulate several requirements of a mask making facility. It is also expected to lead to a more automated mask making shop."
}
@article{BN198520,
title = "An inexpensive electron beam lithographic system and its application to monolithic circuit fabrication",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "20 - 30",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80132-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801324",
author = "B.N. and Lyons",
abstract = "The cost of commercial electron beam lithographic (EBL) systems can be prohibitive for institutions with limited resources who wish to fabricate short gate transistors or circuits requiring high resolution processing. This paper describes an EBL system, based on a modified scanning electron microscope which is inexpensive to construct yet can satisfy the high resolution lithographic requirements of many research centres. The system can handle standard data from a CAD system by writing the overall pattern as an array of stitched fields using metal registration marks. The field size is 400 μm square with a pixel size of 0.1μm. The overall array size is limited to 20mm square. To date the system has been used to fabricate monolithic amplifiers incorporating dual 200 μm wide MESFETS with 0.5 μm long gates and a process test pattern. The system is implemented using microprocessor based hardware linked to a host computer. Beam control, stage movement and wafer imaging are controlled by the microprocessor. Pattern generation and data manipulation are performed on the host computer."
}
@article{Petrova198531,
title = "Carrier mobility determination in short-channel MOS devices",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "31 - 38",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80133-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801336",
author = "R.S. Petrova and R.S. Kamburova and I.S. Nachev",
abstract = "The measurement of the effective carrier mobility in the inversion layer becomes complicated when the device dimentions are reduced. A method is described to determine the field effect mobility, the decrease of the mobility under the influence of normal electrical field, described by the surface scattering factor, and the drain and source series resistances. The degradation in the properties of the Si−SiO2 region which is manifested as a decrease in the low field mobility of the inversion layer carriers is considered."
}
@article{Radacks198539,
title = "Comparison of microelectronic test structures for propagation delay measurements",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "39 - 46",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80134-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801348",
author = "D.J. Radacks and C.T. Yao and L.W. Linholm and K.F. Galloway and H.C. Lin",
abstract = "Propagation delay is a parameter which needs to be accurately measured for characterization of VLSI fabrication technologies and VLSI circuit design. In this experiment, three different microelectronic test structures or test circuits were used to measure the propagation delay of a minimally sized CMOS inverter. The measured results and a comparison of the test circuits are presented."
}
@article{DA198547,
title = "Norman G. Einspruch,Editors, ,VLSI Electronics Microstructure Science Volume 9 (1985) Academic Press Inc. 0 12 234109 0.",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80135-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580135X",
author = "D.A. and Taylor"
}
@article{J198547,
title = ",Middle East Review (1985) World of Information.",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80136-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801361",
author = "J. and Aczel"
}
@article{tagkey198549,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "49 - 51",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80137-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801373",
key = "tagkey198549"
}
@article{tagkey198552,
title = "Integrated circuit design verification tools: L Szanto Microelectron. Reliab. 24, 259 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80138-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801385",
key = "tagkey198552"
}
@article{tagkey198552,
title = "Fault-tolerant design techniques for semiconductor memory applications: F.J. Aichelmann, Jr. IBM J. Res. Develop. 28(2), 177 (March 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80139-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801397",
key = "tagkey198552"
}
@article{tagkey198552,
title = "Design of a 3-micron CMOS cell library: C.P. Lincoln Electl. Commun. 58, 384 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80140-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801403",
key = "tagkey198552"
}
@article{tagkey198552,
title = "Reliability problems with VLSI: Fausto fantini Microelectron. Reliab. 24, 275 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80141-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801415",
key = "tagkey198552"
}
@article{tagkey198552,
title = "Monolithic 10-bit d-a converter avoids postprocess trimming: Peter H. Saul Electronics 144 (14 June 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80142-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801427",
key = "tagkey198552"
}
@article{tagkey198552,
title = "MOS technology for VLSI: G. Declerck, K. De Meyer and L. Dupas Microelectron. Reliab. 24, 205 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80143-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801439",
key = "tagkey198552"
}
@article{tagkey198552,
title = "Designers weigh options for 256-K dynamic-RAM processes: Peter Linder, Roger Norwood and Hgai Hung Hong Electroniocs 104 (12 July 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "52 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80144-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801440",
key = "tagkey198552"
}
@article{tagkey198553,
title = "Boundary conditions for pn heterojunctions: M.S. Lundstrom Solid St. Electron. 27, 491 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "53 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80145-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801452",
key = "tagkey198553"
}
@article{tagkey198553,
title = "C-MOS 256-K RAM with wideband output stands by on microwatts: Amr Mohsen, Roger Kung, Joe Schultz, Paul Madland, Carl Simonsen, Esmat Hamdy and Ken Yu Electronic 138 (14 June 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "53 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80146-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801464",
key = "tagkey198553"
}
@article{tagkey198553,
title = "Smart-power process puts overvoltage protection on chip: Warren Schultz Electronics 134 (28 June 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "53 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80147-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801476",
key = "tagkey198553"
}
@article{tagkey198553,
title = "Final state effects of deep impurities in semiconductors: I.L. Jones and J.C. Inkson Solid St. Commun. 51, 59 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "6",
pages = "53 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80148-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801488",
key = "tagkey198553"
}
@article{John19853,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "3 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80001-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580001X",
author = "John and Butcher"
}
@article{Bundalo19855,
title = "Non-inverting regenerative CMOS logic circuits",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "5 - 17",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80002-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800021",
author = "Zlatko V. Bundalo and Branko L. Dokić",
abstract = "Non-inverting regenerative CMOS logic circuits (non-inverting Schmitt circuits) consisting of an input logic circuit and two inverters connected as a flip-flop are proposed in the paper. Static and dynamic characteristics and normal operation conditions are analysed."
}
@article{TaherAbuelma'Atti198518,
title = "A new active-C oscillator",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "18 - 21",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80003-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800033",
author = "Muhammad Taher Abuelma' Atti and Abood Hamad Alsawafy",
abstract = "A new active-C circuit generating nearly sinusoidal oscillations over a wide frequency range is presented. The circuit uses two operational amplifiers plus four capacitors. The feasebility of generating oscillations using two operational amplifiers only, without using any capacitors, is investigated. Experimental results are included."
}
@article{Martinez198522,
title = "Nonlinear distortion in current-feedback amplifiers",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "22 - 30",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80004-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800045",
author = "Pedro A. Martinez and Manuel Lozano",
abstract = "A systematic method to characterize the nonlinear distortion in current-feedback amplifiers is described in this paper. This technique is easy to apply and allows us to determine analytical expressions for 2nd and 5th coefficients of harmonic distortion for single stage amplifiers. It is also applicable to differential pairs."
}
@article{Nihal198531,
title = "Advances in microelectronics packaging and interconnection technologies —towards the new generation of hybrid microelectronics",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "31 - 43",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80005-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800057",
author = "Nihal and Sinnadurai"
}
@article{AE198545,
title = "Surface Mounted Semiconductors Published by: Benn Electronics Publications, Luton, UK Authors: David Taylor & Bob Garner of Product Assessement, London, UK",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "45 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80006-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800069",
author = "A.E. and Fletcher"
}
@article{M198545,
title = "s2",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "45 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80007-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800070",
author = "M. and Howson"
}
@article{tagkey198546,
title = "Status and prospects for gallium arsenide technology: D. G. Fisher Electl. Commun., 58, 418 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80008-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800082",
key = "tagkey198546"
}
@article{tagkey198546,
title = "Roop: Solid St. Technol., 147 (May 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80009-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800094",
key = "tagkey198546"
}
@article{tagkey198546,
title = "Fast C-MOS logic bids for TTL sockets in most systems: R. E. Funk Electronics 134 (5 April 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80010-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800100",
key = "tagkey198546"
}
@article{tagkey198546,
title = "A novel memory device for VLSI E2 prom: S. T. Hsu RCA Review 45, 49 (March 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80011-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800112",
key = "tagkey198546"
}
@article{tagkey198546,
title = "Bipolar gate array delivers fast signal processing: Roger Cox Electronics 143 (17 May 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80012-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800124",
key = "tagkey198546"
}
@article{tagkey198546,
title = "Modular approach to C-MOS technology tailors process to application: Kim Kokkonen and Richard Pashley Electronics 129 (3 May 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80013-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800136",
key = "tagkey198546"
}
@article{tagkey198546,
title = "Impact of custom VLSI technology: R. F. Privett and P. Van Iseghem Electl. Commun., 58, 364 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "46 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80014-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800148",
key = "tagkey198546"
}
@article{tagkey198547,
title = "Transition to one micro technology: Part 2: Pieter Burggraf Semiconductor Int., 136 (June 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80015-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580015X",
key = "tagkey198547"
}
@article{tagkey198547,
title = "Design system for semi-custom VLSI cicuits: A. D. Close, L. Fisher, R. M. McDermott, T.A. Nix, D. M. Perrine and J. M. Schoen Electl. Commun., 58, 372 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80016-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800161",
key = "tagkey198547"
}
@article{tagkey198547,
title = "Improved planar isolation with buried-channel MOS FET's: H. Sunami, Ykawamoto, K. Shimohigashi and N. Hashimoto Microelectron Reliab. 24, 555 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80017-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800173",
key = "tagkey198547"
}
@article{tagkey198547,
title = "Bipolar device packaging-electrical, thermal, and mechanical stress considerations: L. M. Mahalingham and D. J. Reed Solid St. Technol. 167 (May 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80018-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800185",
key = "tagkey198547"
}
@article{tagkey198547,
title = "A comparison of MOS processes for VLSI. Part I: H. E. Oldham and S. L. Partridge Solid St. Technol. 177 (June 1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80019-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800197",
key = "tagkey198547"
}
@article{tagkey198547,
title = "Methodologies for full custom VLSI design: J. Danneels and M. Meinck Electl. Commun. 58, 389 (1984)",
journal = "Microelectronics Journal",
volume = "16",
number = "5",
pages = "47 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80020-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800203",
key = "tagkey198547"
}
@article{John19853,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "3 - 4",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80065-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800653",
author = "John and Butcher"
}
@article{Lutsch19855,
title = "Ion distribution near a mask edge with arbitrary shape for VLSI IC applications",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "5 - 16",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80066-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800665",
author = "A.G.K. Lutsch and D.R. Oosthuizen",
abstract = "The profile of the mask edge during ion implantation determines the electrical field in the critical drain region of a MOS-transistor. Equal ion density lines are computed for various mask edges for the example of boron implanted into silicon at 70 keV. Four moments of the impurity depth distribution (without mask material) are taken into consideration. Homogenisation and, therefore a higher noise immunity, can be obtained by the proper choice of the mask etching process. The influence of a too-thin mask material is also shown."
}
@article{Awatar198517,
title = "A thick film conductive microline fabrication technique",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "17 - 21",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80067-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800677",
author = "Awatar and Singh",
abstract = "A novel technique to fabricate thick film conductive microlines on alumina substates is presented. Thick film DP9596 (Pt−Au) conductive paste screen printed on positive photoresist-coated alumina substrates is fired in a conveyor furnace. The side oxidation of the photoresist and softening of the glass frit contained in the paste make the paste flow and get fired to the substrate generating a line5 μm wide or less depending on the combination of suitable thicknesses of the photoresist and DP 9596 thick film paste. Solid square and rectangular paste prints are found to generate hollow patterns with5μm wide boundaries. SEM combined with EDAX investigation confirmed PT−Au as the microline material. Various applications are also pointed out."
}
@article{MichèlK198522,
title = "Use of PVC for front surface protection of wafers during electrolytic gold backing",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "22 - 23",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80068-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800689",
author = "Michèl K. and Nieuwoudt",
abstract = "A novel and versatile coating was developed for use in protection of the frontside of processed silicon transistor wafers during electrolytic gold backing, carried out in preparation for die-bonding. The coating, an ultra-high purity PVC, (polyvinyl chloride), is easily applied, and completely removed with hot cyclohexanone. It is resistant to the strong mineral and oxidising acids used for cleaning wafers, including silicon etch, and does not contaminate the transistors."
}
@article{R198525,
title = "Novel insensitive minimal-grounded-element dual-polarity ratio-type function generation",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "25 - 28",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80069-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800690",
author = "R. and Nandi",
abstract = "A novel generalised minimal-grounded-element scheme for generating dualpolarity ratio-type (Y1/Y2 or Y2/Y1) function using a composite Operational Amplifier (o.a.)—Current Conveyor (c.c.II) active device is described. The various advantages of the network are discussed. Its applications in a new Operational Transconductance Amplifier (o.t.a.)/Operational Voltage Amplifier (o.v.a.) building block implementation, and, in a simple insensitive grounded-capacitor single resistor controlled synthetic inductor simulation are proposed."
}
@article{BrankoL198530,
title = "Answer to the comment by Dzekov Tomislav and Arsov Goce in Microelectronics Journal Vol. 15 No 3 by B. L. Dokić (See page 32)",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "30 - 31",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80070-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800707",
author = "Branko L. and Dokić"
}
@article{Tomislav198532,
title = "Comments on ‘Influence of series and parallel transistors on DC characteristics of CMOS logic circuits’: Paper published in Microelecronics Journal Vol 13 No 2 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "32 - 33",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80071-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800719",
author = "Dzekov Tomislav and Arsov Goce"
}
@article{T198535,
title = "An Introduction to Printed Circuit Board Technology Edited by: J.A. Scarlett Publisher: Electrochemical Publications Cost: £24.00 plus handling",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "35 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80072-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800720",
author = "T. and Arrowsmith"
}
@article{T198535,
title = "The Multilayer Printed Circuit Board Handbook Edited by: J.A. Scarlett Publisher: Electrochemical Publications Cost: £59.00 plus handling",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "35 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80073-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800732",
author = "T. and Arrowsmith"
}
@article{KennethF198536,
title = "The Primer of High-performance In-circuit Testing (European Edition) Published by: Factron-Schlumberger",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "36 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80074-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800744",
author = "Kenneth F. and Wilson"
}
@article{Martin198538,
title = "An integrated LSI design aids system",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "38 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80075-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800756",
author = "G. Martin and J. Berrie and T. Little and D. Mackay and J. McVean and D. Tomsett and L. Weston"
}
@article{Ferry198538,
title = "The role of transport in very small devices for VLSI",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "38 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80076-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800768",
author = "D.K. Ferry and H.L. Grubin"
}
@article{Jouve198538,
title = "The contiguous disk technology for high density bubble memories",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "38 - 39",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80077-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580077X",
author = "H. Jouve and J. Magnin"
}
@article{Okada198539,
title = "Some considerations for peripheral circuits for bubble memory",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "39 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80078-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800781",
author = "M. Okada and Y. Yamaguchi and K. Tsuchiya"
}
@article{Yoshio198539,
title = "Comparison of new technologies for VLSI: possibilities and limitations",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "39 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80079-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800793",
author = "Yoshio and Nishi"
}
@article{AlfredC198539,
title = "How a new generation of microprocessors supports modular programming in high-level languages",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "39 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80080-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580080X",
author = "Alfred C. and Hartman"
}
@article{JDE198539,
title = "A review of self-scanned image sensors",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "39 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80081-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800811",
author = "J.D.E. and Beynon"
}
@article{Ashton198539,
title = "New generation semiconductor C. W. laser packages with full herimeticity, integral power monitoring and direct fibre optic launching",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "39 - 40",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80082-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800823",
author = "J.E.U. Ashton and R.M. Gibb and B.A. Eales"
}
@article{DW198540,
title = "The development of fibre optic systems for industrial applications",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "40 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80083-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800835",
author = "D.W. and Harper"
}
@article{Burges198540,
title = "Pin-fet receivers for 1.3 micron fibre optic systems",
journal = "Microelectronics Journal",
volume = "16",
number = "4",
pages = "40 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80084-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285800847",
author = "J.W. Burges and A.W. Mabbitt and K.L. Monham"
}
@article{John19853,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "3 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80259-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802597",
author = "John and Butcher"
}
@article{DavidRuimy19855,
title = "Interfacing multi-processors using devices with dual-port RAM",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "5 - 12",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80260-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802603",
author = "David Ruimy and Gonzales"
}
@article{Ian198513,
title = "ROMs to bubbles: non-volatile memories which—when—why?",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "13 - 22",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80261-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802615",
author = "Ian and Duthie",
abstract = "An overview of the non-volatile memory market is presented with the advantages and limitations of the alternative technologies discussed, together with the application areas most suited to the different alternatives. Despite the development of new or modified technologies, each alternative can still offer the user a specific advantage for his application depending on his primary concern which may be cost, flexibility, reliability or environmental needs."
}
@article{Jim198523,
title = "Advanced step and repeat aligner for VLSI",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "23 - 33",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80262-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802627",
author = "Jim and Dey"
}
@article{Lee198534,
title = "A fully-scaled NMOS technology for VLSI circuits",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "34 - 40",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80263-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802639",
author = "J.Y. Lee and H.L. Garvin and C.W. Slayman and D.B. Rensch",
abstract = "A fully-scaled NMOS process was developed for VLSI cirsuits. Device isolation was achieved by channel stop implant using a reverse tone resist technique. This isolation process gives high field turn-on voltage, minimal narrow width effect and low body effect. A tri-level photoresist process was developed for gate definition. This process technology was demonstrated through the successful fabrication of an 8×8 bit parallel multiplier with submicrometer gatelengths. This 8×8 bit multiplier has a multiplication time of 9.5 ns."
}
@article{Mark198541,
title = "Engineering Research Centres: A World Directory of Organisations and Programmes Consultant Editors: T. Archbold, J. C. Laidlaw, & J. McKechnie ISBN 0-582-90018-2",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "41 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80264-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802640",
author = "Mark and Howson"
}
@article{Ken198541,
title = "Dictionary of Microprocessor Systems: Edited by D. Muller Published by Elsevier Science Publications, Holland, also available from Elsevier Science Publishers, New York",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "41 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80265-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802652",
author = "Ken and Wilson"
}
@article{tagkey198542,
title = "Contents No. 6 January 1985",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "42 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80266-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802664",
key = "tagkey198542"
}
@article{tagkey198543,
title = "The application of GaAIAs lasers to high-resolution liquid-crystal projection displays: A. G. Dewey and J. D. Crow IBM J1 Res. Dev. 26 (2), 177 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "43 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80267-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802676",
key = "tagkey198543"
}
@article{tagkey198543,
title = "New bubble-memory packaging cuts board space and manufacturing costs: Art Thorp Electronics, 128 (24 March 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "43 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80268-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802688",
key = "tagkey198543"
}
@article{tagkey198543,
title = "VLSI metallization using aluminium and its alloys. Part I: D. Pramanik and A. N. Saxena Solid St. Technol., 127 (January 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "43 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80269-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580269X",
key = "tagkey198543"
}
@article{tagkey198543,
title = "VLSI metallization using aluminium and its alloys. Part II: D. Pramanik and A. M. Saxena Solid St. Technol., 131 (March 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "43 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80270-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802706",
key = "tagkey198543"
}
@article{tagkey198543,
title = "Float-zoning of semiconductor silicon: a perspective: Horst G. Kramer Solid St. Technol., 137 (January 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "43 - 44",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80271-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802718",
key = "tagkey198543"
}
@article{tagkey198544,
title = "Developments in crystal growth from high-temperature solutions: Hans J. Scheel Prog. Crystal Growth Char., 5, 277 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "44 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80272-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580272X",
key = "tagkey198544"
}
@article{tagkey198544,
title = "Ceramic on metal substrates produced by plasma spraying for thick film technology: Leszek Golonka and Lech Pawlowski Electrocomponent Sci. Technol. 10, 143 (1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "44 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80273-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802731",
key = "tagkey198544"
}
@article{tagkey198544,
title = "Self-consistent theory of diagonal and off-diogonal disorder in the screened impurity band of doped semiconductors: Norberto Majlis and Enrique V. Anda Solid St. Communs 45 (7), 561 (1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "44 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80274-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802743",
key = "tagkey198544"
}
@article{tagkey198544,
title = "A comprehensive sequence for the electron beam exposure system: Terrence E. Zavecz Solid St. Technol., 106 (February 1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "44 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80275-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802755",
key = "tagkey198544"
}
@article{tagkey198544,
title = "ZRM 20—an electron-beam mask and wafer measuring and inspection system: Reiner Plontke and Werner Lelle Jena Rev. 2, 76 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "44 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80276-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802767",
key = "tagkey198544"
}
@article{tagkey198544,
title = "Design for testability—a survey: Thomas W. Williams and Kenneth P. Parker Proc. IEEE 71 (1), 98 (1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "44 - 45",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80277-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802779",
key = "tagkey198544"
}
@article{tagkey198545,
title = "On discrete hazard functions: A. A. Salvia and R. C. Bollinger IEEE Trans. Reliab. R-31 (5), 458 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "3",
pages = "45 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80278-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802780",
key = "tagkey198545"
}
@article{John19853,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "3 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80211-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802111",
author = "John and Butcher"
}
@article{ME19855,
title = "Wafer cooling in ion implantation",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "5 - 16",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80212-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802123",
author = "M.E. and Mack"
}
@article{L198517,
title = "Cosmic ray effects in microelectronics",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "17 - 29",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80213-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802135",
author = "L. and Adams",
abstract = "Cosmic ray effects in microelectronics are presently of major concern in satellite technology, beginning to present problems in digital avionics, particularly high flying aircraft.
The cosmic ray effect, often referred to as a ‘single event upset’ (SEU) is the result of passage of a naturally occurring, energetic, heavy ion through a sensitive region of a microcircuit. The dense, localised ionisation along the track of the ion can result in the generation of sufficient charge to change the state of an internal node resulting in a false logic transition.
A more serious cosmic ray effect is ‘latch-up’ which is the result of an SCR action in certain microcircuit technologies, is permanent in nature and potentially destructive.
This paper describes the phenomenon of single event upset resulting from cosmic ray effects, discusses its impact in terms of microcircuit technology and describes the current status and future trends in ground testing techniques."
}
@article{TusharR198530,
title = "Packages for ultra-high speed GaAs ICs",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "30 - 37",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80214-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802147",
author = "Tushar R. and Gheewala",
abstract = "Two, 36-pin, chip-carrier packages are reported which meet the requirements of ultra-high-speed GaAs ICs with up to 3GHz clock rates and 100 picoseconds rise and fall times. The packaging requirements are analyzed on the basis of propagation delay, stub lengths, cross-talk and power supply regulation. Tw packages with internal groundplane, power-supply by-pass capacitors and a maximum package dimensions of 1cm×1cm are developed. The first packaging approach is based on a multilayer co-fired ceramic technology, whereas, the second approach utilizes a silicon IC as a chip-carrier upon which the GaAs IC die is mounted. In the later case the Si-chip provides shielded transmission lines, power supply regulation, terminating and damping resistors as well as lowers the thermal resistance of the package."
}
@article{M198538,
title = "Liquid crystal displays",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "38 - 42",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80215-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802159",
author = "M. and Jones",
abstract = "The advantages liquid cyrstal displays possess over competing technologies, namely low voltage and power requirements, good viewability under strong ambient lighting, high reliability and long life have made LCD's the dominant CMOS compatible display technology. This paper will concentrate on the technology and applications of highly multiplexed I.c.d. modules, where both display and associated electronics are being operated at very high performance levels."
}
@article{BrankoL198543,
title = "Influence of series transistors on transfer characteristic of CMOS circuits",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "43 - 51",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80216-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802160",
author = "Branko L. and Dokić",
abstract = "The transfer characteristic of CMOS NAND and NOR m-input logic circuits, when the first m-n inputs are passive and remaining n are active is analized in this paper. It is shown that the optimum ratio of constants ß of the series and parallel transistors is equal to the number of inputs of a logic circuit. This is valid for any number of active inputs."
}
@article{tagkey198553,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "53 - 55",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80217-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802172",
key = "tagkey198553"
}
@article{MJ198557,
title = "Pascal for fortran programmers: Edited by R. Weiss and C. Seiter. Publisher: Addison Wesley Publishing Company",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "57 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80218-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802184",
author = "M.J. and Shute"
}
@article{tagkey198559,
title = "Average mobilities of carriers in subdoped silicon layers: Ju-Yan Xu and Li-Mo Wang Solid-St. Electron. 25 (10), 979 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "59 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80219-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802196",
key = "tagkey198559"
}
@article{tagkey198559,
title = "A simple optimisation procedure for bipolar subnanosecond ICs with low power dissipation: R. Ranfft and H.-M. Rein Microelectron. J. 13 (4), 23 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "59 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80220-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802202",
key = "tagkey198559"
}
@article{tagkey198559,
title = "Thermal nitridation of silicon dioxide for thin gate insulators. Part I: Juditha. Nemetz and Richarde. Tressler Solid St. Technol., 79 (February 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "59 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80221-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802214",
key = "tagkey198559"
}
@article{tagkey198559,
title = "Epitaxie en phase liquide de GaxIn1−xP1−y: J. Ricciardi and B. De Cremoux Revue tech. Thomson-CSF 15 (1), 87 (March 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "59 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80222-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802226",
key = "tagkey198559"
}
@article{tagkey198559,
title = "Palladium alloy as a plating alternative for hybrid microelectronic packages: Donald A. Granitz Electron. Pakaging Prodn, 117 (February 1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "59 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80223-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802238",
key = "tagkey198559"
}
@article{tagkey198560,
title = "Life of magnetic electroless Co-P thin films: Hideo okamoto, Haruo Nitta and Seigo Ohno IEEE Trans. Reliab. R-30 (5), 402 (1981)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80224-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580224X",
key = "tagkey198560"
}
@article{tagkey198560,
title = "Diffusivity of moisture in thin films: E. J. Mcinerney and P. A. Flinn Proc. IEEE Reliab. Phys. Symp., 264 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80225-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802251",
key = "tagkey198560"
}
@article{tagkey198560,
title = "Ohmic contacts to III-V compound semiconductors: a review of fabrication techniques: A. Piotrowska, A. Guivarch and G. Pelous Solid-St. Electron. 26 (3), 179 (1983).",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80226-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802263",
key = "tagkey198560"
}
@article{tagkey198560,
title = "Multi-chip module technology: R. A. Rinne and D. R. Barbour Electrocomponent Sci. Technol. 10, 31 (1982)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80227-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802275",
key = "tagkey198560"
}
@article{tagkey198560,
title = "Wet etching today: Pieter S. Burggraaf Semiconductor Int., 48 (February 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80228-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802287",
key = "tagkey198560"
}
@article{tagkey198560,
title = "The application of reactive ion etching to the definition of patterns in A1-Si-Cu conductor layers and thick silicon oxide films: Andrews A. Chambers Solid St. Technol., 83 (January 1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80229-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802299",
key = "tagkey198560"
}
@article{tagkey198560,
title = "Wire-routing machines—new tools for VLSI physical design: Se June Hong and Ravinair Proc. IEEE 71 (1), 57 (1983)",
journal = "Microelectronics Journal",
volume = "16",
number = "2",
pages = "60 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80230-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285802305",
key = "tagkey198560"
}
@article{tagkey1985CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "CO2 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80119-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801191",
key = "tagkey1985CO2"
}
@article{John19853,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "3 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80120-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801208",
author = "John and Butcher"
}
@article{Golja19855,
title = "A review of nitrogen trifluoride for dry etching in microelectronics processing",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "5 - 21",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80121-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928580121X",
author = "Bogdan Golja and John A. Barkanic and Andrew Hoff",
abstract = "The development of new gases for dry etching is important if submicron device geometries are to be realized. Gases which are currently in use for the various processing steps associated with device fabrication include CF4, CF4/O2, SF6, CC14, and to a lesser extent NF3. It is this gas, NF3, which is the topic of this article. The review presents a synopsis of the etching characteristics of material such as Si, SiO2, in NF3 plasmas."
}
@article{Gupta198522,
title = "Defects in photomasks",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "22 - 40",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80122-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801221",
author = "S.N. Gupta and A.K. Bagchi and N.N. Kundu",
abstract = "Control of defect density is very important in all the processes of integrated circuits. Photomask plays a very important role in IC fabrication. Defect density has to be very well controlled in photomasks. It is not only important to work for a good process control in mask fabrication shop. It is also necessary that we understand various causes of these defects. There can be multifarious sources of these defects. Some defects are caused by improper processing, others by insufficent control in environment and still others by improper imaging. In this paper we present the results of a comprehensive study and classification of different defects found in photomasks. The sources of these defects are also mentioned. Some defects are not generally considered in present mask fabrication processes and in that respect, are new. This study has been performed in order to gear our mask making facility for VLSI where defect densities of the order of 1 defect per inch square might be needed. Information gathered in the course of this study can greatly enhance the capabilities of a mask fabrication shop for LSI."
}
@article{Krimmel198541,
title = "An inexpensive electron beam annealing apparatus with line focus, made from a converted electron welding machine",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "41 - 46",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80123-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801233",
author = "E.F. Krimmel and A.G.K. Lutsch and H.P. Meyer and S.B.K. Theron",
abstract = "Electron beam annealing has, after an active period of research, become an established technology in the production of semiconductor devices, since high quality restoration practically without out-diffusion, can be achieved.
Many universities and research institutions cannot afford to purchase a dedicated electron beam annealing apparatus. In the following a conversion of an industrial electron beam welding apparatus into an annealing apparatus with line focus is described, which could easily be copied by interested institutions. A magnetic quadropole-lens is described generator circuit for the X and Y deflection are used. Electron currents of 4 to 5 mA cause silicon to melt (1415°C). Annealing results obtained with the apparatus are discussed."
}
@article{Kumar198547,
title = "Recent developments in current conveyors and their applications",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "47 - 52",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80124-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801245",
author = "Umesh Kumar and Sushil K. Shukla",
abstract = "The current conveyor is a newly introduced promising circuit building block. In this paper, its history has been traced since its invention in 1968 and the present state of affairs is reviewed. At present the tendency is to replace as many operational amplifier circuits by their current conveyor versions as possible. Analog computation, gyrators, mutators, inductor simulation, frequency dependent negative resistance, transfer function realization, various types of filters, RC oscillators etc. are some main fields where current conveyor has proved its usefulness. Also there are some circuits which are not possible using operational amplifiers, so current conveyor is only choice available for these circuits. Now-a-days one criterion of success of a new circuit is that it sould be possible to obtain its integrated circuit form. Contemporary circuits have been tested on this criteria and suggestions for future research have been given."
}
@article{Jain198553,
title = "A new computer algorithm for cauer (elliptic) response",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "53 - 57",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80125-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801257",
author = "L.C. Jain and A.G. Bolton",
abstract = "A new computer algorithm for determining the Causer (elliptic) response is presented using singularity locations. This approach may prove very useful to the filter designers as it permits to design the elliptic filter without using tables which are perhaps generated using elliptic integral and are limited."
}
@article{PWK198558,
title = "Yano Research Institute Ltd,Editors, ,High Technology Report (May 1984) Yano Research Institute Ltd,Japan.",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "58 - ",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80126-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801269",
author = "P.W.K. and Rathkey"
}
@article{SI198558,
title = "M. Goodge, ,Semiconductor Device Technology (1983) Macmillan Press,London £11,50 (paperback) 495pp..",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "58 - 59",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80127-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801270",
author = "S.I. and Hurst"
}
@article{tagkey198561,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "16",
number = "1",
pages = "61 - 64",
year = "1985",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(85)80128-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269285801282",
key = "tagkey198561"
}
@article{JohnB19843+(1*),
title = "Editorial",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "3+(1*) - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80126-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801263",
author = "John B. and Butcher"
}
@article{Ghatol19845,
title = "Dependence of breakdown voltage on the junction curvature in concentration profiled diodes",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "5 - 14",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80127-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801275",
author = "A.A. Ghatol and V.P. Sundarsingh",
abstract = "The variation of junction depth when impurities are diffused simultaneously from two unequal impurity concentration sources, is studied by carrying out two dimensional numerical computation of impurity atom distributions resulting from (i) constant surface concentration source and (ii) limited source diffusion. The effect of the variation of junction curvature on the field configuration in the depletion region and the breakdown voltage of a reverse biased concentration profiled diode is studied. The exact variation of the junction curvature also determines the minimum size of the edge region to achieve the optimum breakdown voltage."
}
@article{EH198415,
title = "On the base region in very small geometry, bipolar transistors",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "15 - 23",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80128-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801287",
author = "E.H. and Stevens",
abstract = "Relationships between base region properties and the performance of very small geometry, bipolar transistors are discussed. It is shown that simultaneously obtaining high current gain, low sensitivity to ionic charge, and fast switching from logic gates requires a compromise in designing the transistor base region. Experimental results from transistors with an active area of only 8μm2 are presented. The results demonstrate that a d.c. current gain of 70, a tolerance of surface region ions to concentrations as large as 8×1011 cm−2, and a logic gate delay of 0.18 S can be obtained."
}
@article{Herzl198424,
title = "Redistribution phenomenon of residual impurities in undoped GaAs epitaxial layers grown by MOCVD as a function of growth time",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "24 - 30",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80129-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801299",
author = "Herzl and Aharoni",
abstract = "It is experimentally demonstrated that under certain growth conditions, the deposition time of intentionally doped single-crystal GaAs mono-epitaxial layers grown by Metallic-Organo-Chemical Vapor Deposition (MOCVD) on (100) GaAs substrates strongly influences the residual impurities content. Five samples, each grown with a different deposition period but under the same growth conditions and sequence were investigated. The residual impurities in the upper part of the epilayer (0.4μm to 1μm below the layer surface) were determined using C-V measurements. The results show that in this range of depth: (1) the residual impurity concentration is lower in layers deposited during longer periods, and higher in layers deposited during shorter periods; (2) the distribution profile of these impurities can be approximated as linear; (3) the impurity gradient is larger for layers deposited during shorter periods than in layers deposited during longer periods. The above relations between residual impurities and growth time may be important in developing procedures for GaAs devices fabricated by the MOCVD method."
}
@article{Hoffmann198431,
title = "Development of ion-sensitive field effect transistors for pH and ionic concentration measurement",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "31 - 43",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80130-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801305",
author = "C.R. Hoffmann and M.R. Haskard and D.E. Mulcahy",
abstract = "Ion-sensitive field effect transistors (ISFETS) are miniaturised, semi conductor, chemical sensors which constitute an attractive alternative to conventional ion-selective electrodes.
The theory, structure and fabrication process of silicon monolithic ISFET probes designed and manufactured at the S.A. Institute of Technology are briefly described.
A number of ISFET probes were activated to respond to specific ions and characterisation experiments have been performed. Sensors for pH, silver, copper and nitrate were produced and tested. Various methods of application of the sensitising materials were employed and in some cases a comparison of methods made.
The silicon chip incorporated an ISFET, standard MOS transistor and diode so that a range of circuits could be explored. These included both voltage and current modes of operation with temperture compensation possible. Attention has been given to the provision of an appropriate microelectronic reference element, this being a major problem in all miniature ion-selective sensor."
}
@article{tagkey198444,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "44 - 45",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80131-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801317",
key = "tagkey198444"
}
@article{tagkey198446,
title = "Classified index to articles-Vols. 14 & 15 inclusive",
journal = "Microelectronics Journal",
volume = "15",
number = "6",
pages = "46 - 48",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80132-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801329",
key = "tagkey198446"
}
@article{John19843+(1*),
title = "Editorial",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "3+(1*) - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80118-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801184",
author = "John and Butcher"
}
@article{Endo19845,
title = "A 256K-bit dynamic RAM-with high alpha immunity",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "5 - 15",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80119-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801196",
author = "Akira Endo and Satoru Ito and Masamichi Ishihara",
abstract = "The series consists of 262, 144 word∼ 1 bit dynamic random access memories (DRAMs) utilizing the latest Hitachi 2 om n-channel process. There are two types of 256K-bit DRAMs. One has the conventional page mode for high speed operation. The other has a new function, the nibble mode. The nibble mode makes possible very fast 4-bit serial read/write operation. High alpha immunity is obtained by utilizing high memory cell capacitance, a metal folded-bit-line structure, and a fully VCC storage circuit. Redundancy technology is employed to enhance yield."
}
@article{G198416,
title = "256K-bit dynamic RAM",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "16 - 22",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80120-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801202",
author = "G. and Nelmes"
}
@article{MR198423,
title = "Sensor on silicon gate NMOS multi-project chips",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "23 - 36",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80121-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801214",
author = "M.R. and Haskard",
abstract = "To interface VLSI chips to the real or physical world sensors are required. A range of sensors including thermal, optical, magnetic and strain devices were incorporated on experimental multi-project chips and results are reported."
}
@article{MJ198437,
title = "An implementation of a 16 bit processor using only 600 transistors",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "37 - 47",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80122-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801226",
author = "M.J. and Shute",
abstract = "This paper describes an implementation of a simple processor which was described in Microelectronics Journal, vol. 15, No. 3. That paper considered only how a programmer might visualise the machine. This paper describes the implementation of the machine at the register-transfer level, using a description written in the simulation language ISP'. The operation of the machine is then described, and a few conclusions about its performance are made."
}
@article{Maddox198448,
title = "MOSFET performance enhancement by improved SOS material processes",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "48 - 61",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80123-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801238",
author = "R.L. Maddox and A.L. Lin and I. Golecki and H.L. Glass",
abstract = "The performance of NMOS/SOS devices designed for near micron geometries is shown to be enhanced markedly by pre-process SOS material improvements. A description of the double solid phase epitaxial regrowth technique, DSPE, is presented including the results of several materials evaluation, techniques: Rutherford backscattering and channeling spectrometry, X-ray twin content, sheet resistance, spreading resistance, ultraviolet reflectivity, and Hall data vs. temperature. Post-MOS process evaluation data of materials and device properties is also presented, which includes: gated Hall data, SIMS, sheet resistance, majority and minority carrier mobility, threshold voltage, subthreshold current slope, back channel leakage current, and electrical carrier density profiles. Significantly enhanced device performance is reported, such as ≥20% improvement in all mobilities, factor of 100 reduction in twin content, factor of 5 to 10 reduction in backchannel leakage, and 15 to 25% improvement in subthreshold current slope."
}
@article{Milos198462,
title = "Aftab A. Mufti,Editors, ,Elementary Computer Graphics (1983) A Prentice Hall Company 0-8359 1654-5 1983.",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80124-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480124X",
author = "Milos and Krejcik"
}
@article{tagkey198463,
title = "Forthcoming events",
journal = "Microelectronics Journal",
volume = "15",
number = "5",
pages = "63 - 64",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80125-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801251",
key = "tagkey198463"
}
@article{John19843,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "3 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80065-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800658",
author = "John and Butcher"
}
@article{Fotouhi19845,
title = "A single-chip CMOS analog front-end for high-speed modems",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "5 - 19",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80066-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480066X",
author = "B. Fotouhi and R. Gregorian and W. Kline",
abstract = "A single-chip analog front-end for high-speed modems has been developed in 5μ polysilicon CMOS process. The chip contains a 10-bit A/D and an 8-bit D/A converters, a novel 128-step 0.375 dB/step programmable gain stage, 20-step 1dB/step programmable attenuator, switched-capacitor and active RC low-pass and high-pass filters for the receive and transmit directions, and all the associated TTL level compatible control logic. A CMOS band-gap voltage reference is shared between the receiver and transmitter. The chip, housed in 40-pin plastic package, is 223×219 mil2 and dissipates 120 mW using ±5V supplies."
}
@article{Hara198420,
title = "CMOS single-chip digital signal processor",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "20 - 28",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80067-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800671",
author = "Hideo Hara and Takashi Akazawa and Yoshimune Hagiwara",
abstract = "The HSP (HD61810) is a single-chip digital signal processor which includes a high speed arithmetic logic unit, a high speed multiplier, and a large memory on a single silicon chip. Its architecture features floating point arithmetic and a pipeline structure. With the floating point arithmetic operation, the HSP can manipulate a wide dynamic range of data. The instruction cycle of the HSP is 250 ns. One multiply/add operation can be executed per cycle. The HSP uses 3 μm CMOS technology and so achieves low power consumption. It is programmed by an internal instruction ROM."
}
@article{WT198429,
title = "The design of a truly random monolithic noise generator",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "29 - 40",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80068-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800683",
author = "W.T. and Penzhorn",
abstract = "This paper describes the design of a monolithic analogue noise generator, which meets the following objectives: it is self-contained in a conventional IC package, needs no unconventional precautions and operates from a standard +5V supply. It dissipates less than 20 mW and produced a truly random gaussian noise voltage of approximately 500 mV (rms) with a band-width of 1 kHz–100 kHz. Unlike the pseudo-random numbers generated by shift registers, truly random numbers can be obtained by clipping the analogue noise with an external comparator and sampling the resulting random square wave.
Shot and thermal noise in bipolar transistors, manufactured with a standard bipolar process, serve as primary noise sources. The noise generated by a conventional differential amplifier, connected as a unity gain buffer, is used as a basic noise source. The noise produced by two independent unity gain buffers is differentially amplified, in order to reduce ambient influences. Externally the noise generator appears in the form of an operation amplifier, whose frequency-response can be shaped with external components."
}
@article{S198441,
title = "Integrable tunable dual-function integrator/differentiator network with extremely low value grounded capacitor",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "41 - 46",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80069-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800695",
author = "S. and Nandi",
abstract = "This communication presents a novel active-RC network configuration, using two Operational Amplifier (OA) active elements and a few passive RC components, which is able to generate either an integrator or a differentiator network function. The novelties of the proposed configuration are to realise an ideal integrator or differentiator function by a simple switching arrangement, tunability of the network time constant by a single resistor at low sensitivities, design flexibility of large integrator time constant with extremely low value capacitor, wherein the capacitor is grounded. These features make the circuit configuration attractive for integrated circuit fabrication."
}
@article{Powell198447,
title = "An automated, low power, high speed complementary PLA design system for VLSI applications",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "47 - 54",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80070-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800701",
author = "S. Powell and E. Iodice and E. Friedman",
abstract = "An automated Programmable Logic Array (PLA) design system that is fully compatible with the density and power constraints of VLSI is described. A low power CMOS version of the PLA has been integrated into a technology independent, automated PLA generation system to provide a self-contained, highly functional and low power, dense cell design capability. A description of the Complementary Programmable Logic Array (CPLA) technique is provided, particularly in terms of its integration into the automated PLA design system. Details of the system's input formats, minimization and verification capabilities, design flexibility, CAD compatibility, and processing speeds are discussed."
}
@article{R198455,
title = "s2",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "55 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80071-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800713",
author = "R. and Stoddart"
}
@article{Richard198455,
title = "s2",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "55 - 56",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80072-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800725",
author = "Richard and Bayford"
}
@article{Richard198456,
title = "Richard J. Higgins,Editors, ,Electronics with Digital and Analog Integrated Circuits (1983) Prentice Hall International.",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "56 - 57",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80073-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800737",
author = "Richard and Bayford"
}
@article{T198457,
title = ",Growth and Perspectives—Financial study of the British Consumer Electronics and Telecommunications Industry 1983 (1983) Faxtel International Inc..",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "57 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80074-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800749",
author = "T. and Brazier"
}
@article{tagkey198458,
title = "Failure modes induced in TTL-LS bipolar logics by negative inputs: C. Canali, F. Fantini, G. Soncini, P. Venturi and E. Zanoni",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "58 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80075-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800750",
key = "tagkey198458"
}
@article{tagkey198458,
title = "Properties of digital microelectronic systems from the viewpoint of signal transmission: Dr. Zdenek Mack Tesla Electron., 1, 16 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "58 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80076-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800762",
key = "tagkey198458"
}
@article{tagkey198458,
title = "Combinatorial reliability analysis of multiprocessor computers: Kai Hwang and Tian-Pong Chang IEEE Trans. Reliab, R-31 (5), 469 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "58 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80077-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800774",
key = "tagkey198458"
}
@article{tagkey198458,
title = "Model for transient and permanent error-detection and fault-isolation coverage: D. C. Bossen and M. Y. Hsiao IBM J1 Res. Dev. 26 (1), 67 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "58 - 59",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80078-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800786",
key = "tagkey198458"
}
@article{tagkey198459,
title = "Device modeling: Walter L. Engl, Heinz K. Dirks and Bernd Menerzhagen Proc. IEEE 71 (1), 10 (1983)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "59 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80079-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800798",
key = "tagkey198459"
}
@article{tagkey198459,
title = "Advances in automated wire and die bonding: Bruce W. Hueners and Douglas M. Day Solid St. Technol., 69 (March 1983)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "59 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80080-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800804",
key = "tagkey198459"
}
@article{tagkey198459,
title = "Parts control and reliability assurance of RF hybrids: J. R. Oslica. IEEE Proc. Reliab., 378 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "59 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80081-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800816",
key = "tagkey198459"
}
@article{tagkey198459,
title = "Thermal characteristics of a hybrid microcircuit: P. Gregory Microelectron. J. 13 (5), 12 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "59 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80082-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800828",
key = "tagkey198459"
}
@article{tagkey198459,
title = "Temperature verification of hybrid microelectronic circuit design: Sedat Sirbegović, Milan Mazalica and Ratko Krcmar Electrocomponent Sci. Technol. 10, 63 (1983)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "59 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80083-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480083X",
key = "tagkey198459"
}
@article{tagkey198459,
title = "Density upgrading in tape automated bonding: K. Kurzweil and G. Dehane Electrocomponent Sci. Technol. 10, 51 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "4",
pages = "59 - 60",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80084-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800841",
key = "tagkey198459"
}
@article{John19843,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "3 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80133-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801330",
author = "John and Butcher"
}
@article{MJ19845,
title = "A design for a 16 bit processor using only 600 transistors",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "5 - 11",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80134-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801342",
author = "M.J. and Shute",
abstract = "The trend in modern hardware design (especially in that of processors) has been away from unsophisticated designs, and towards the implementation of highly functional systems. However, there are still some applications for which unrefined systems have a place. In these, ease of using the device is sacrificed for small physical size. Often there is a need to be able to insert an ‘extra’ processor into a small space (for instance on a memory chip); the need for high yields from a wafer of semiconductor is another possible reason for requiring such a small processor, this time as a stand-alone device.
This report describes the design of a simple sixteen bit processor which uses only 600 transistors in its implementation. Understandably, the power of the processor, the ‘NVDAC’, is very limited. However, this report sets out to demonstrate that many of the savings have been made by optimising the use of the hardware which is provided, and that the resultant design has more power than its small size would suggest."
}
@article{DC198412,
title = "Novel design of the output stage for four-phase dynamic VLSI logic",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "12 - 17",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80135-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801354",
author = "D.C. and Patel",
abstract = "A novel output stage design for four-phase ratioless dynamic logic is proposed for a low speed asynchronous pump circuit. The main features of the proposed circuit are that the precharge capacitance is reduced significantly, leading to lower power consumption, and the circuit can operate in the synchronous mode. Although more transistors are used in the circuit, there is no increase in the chip area."
}
@article{Saha198418,
title = "Desensitisation of the oscillation frequency of RC sub-audio sinewave generators with single resistor control",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "18 - 22",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80136-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801366",
author = "A.R. Saha and S. Nandi and R. Nandi",
abstract = "This communication aims at treating the problem of desensitising the oscillation frequency (ω0) of a class of resistor-controlled sub-audio generator (SAG) on the basis of the examination of the ω0-sensitivities of such oscillators that are implemented through two main synthesis techniques. The study includes a new canonic SAG configuration realised with these techniques along with a comparison of their ω0-sensitivies which finally derives the insensitive design."
}
@article{Blattner198423,
title = "Effective logic analysis techniques for increased design productivity",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "23 - 29",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80137-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801378",
author = "J.D. Blattner and J.P. Huber and C.A. Nobles",
abstract = "Over the past ten years, electronic product designs have gradually shifted from an analog to a digital emphasis. The impact of this shift has been significant. It has changed both the way products are designed and the tools used to design them. Specifically, logic analysis has become one of the most effective tools for digital design. As logic analyzers evolved, designers became more familiar with their use and more productive when using them. It is this concept of higher productivity that forms the basis for this discussion of the logic analyzer evolution and the role it has played in increasing designer productivity and efficiency."
}
@article{RolandP198430,
title = "The density of platinum and palladium powders for thick film pastes",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "30 - 35",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80138-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480138X",
author = "Roland P. and Anjard Sr",
abstract = "Summary
Density is one of the key powder metal properties for materials such as platinum used extensively in the microelectronics industry for hybrid circuits and discrete devices. Of the three major density measurement systems typically used, reliance in the industry is usually on the Scott density and tap density methods. Because of the inate operator variability with the Scott approach contrasted to the excellent coefficient of variance achieved with the tap density method, the latter is preferred. While many precious metal powders can be adequately tested at 1,000 taps, platinum (and many flake materials) require extended taps (3,200 is often specified) to reach the ‘true’ apparent density. Smaller volumes of materials can be normally tested using a 10ml graduate. However, for low surface area powders (larger particles) there is a significant difference in resultant values due to graduate size. Sintering, although it does produce a bi-modal crystal structure, can be used to increase the surface area. The particle size distribution also changes significantly. Very little has been published in recent years because the general instrumentation is basically simple and there have been no major breakthroughs. Manufacturers rely on their own experience using the pycnometer, Scott density and/or tap density. Platinum and palladium require more energy to disperse the particles than other precious and non-noble powders. Each material must be evaluated separately to assure meaningful results."
}
@article{Tomislav198436,
title = "Comments on “Influence of series and parallel transistors on DC characteristics of CMOS logic circuits”: Published in Microelectronics JournalVol 13 No 2 (1982)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "36 - 37",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80139-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801391",
author = "Dzekov Tomislav and Arsov Goce"
}
@article{tagkey198438,
title = "Conductance of small semiconductor devices: A. A. Kastalsky and M. S. Shur Sold-State Communs39, 715 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "38 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80140-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801408",
key = "tagkey198438"
}
@article{tagkey198438,
title = "Comparison of new technologies for VLSI: possibilities and limitations: Yoshio Nishi Microelectronics J.12 (6), 5 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "38 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80141-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480141X",
key = "tagkey198438"
}
@article{tagkey198438,
title = "Laser annealing: J. F. Ready and B. Thompson McClure Semicond. Int. 93 (Nov 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "38 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80142-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801421",
key = "tagkey198438"
}
@article{tagkey198438,
title = "Temperature dependent defect level for an ionic failure mechanism: Richard S. Hemmert IEEE/Proc. IRPS 172 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "38 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80143-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801433",
key = "tagkey198438"
}
@article{tagkey198438,
title = "High density packaging technology: Yusaku Nishi and Kazuo Mizuno Electrocomponent Sci. Technol.9, 3 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "38 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80144-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801445",
key = "tagkey198438"
}
@article{tagkey198439,
title = "Processing considerations of thick film devices with multi-layered resistors: Nobuyuki Sugishita, Akira Ikegami and Tsuneo Endo Electrocomponent Sci. Technol.9, 59 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80145-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801457",
key = "tagkey198439"
}
@article{tagkey198439,
title = "Automated in-line puddle development of positive photoresists: Robert F. Leonard, Gordon Sim and Randy Weiss Solid-State Technology 99 (June 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80146-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801469",
key = "tagkey198439"
}
@article{tagkey198439,
title = "Low-value nickel resistors electroless-plated on ‘IMST’ substrate for power hybrid ICs: N. Miura, Y. Fuura and A. Kazami Electrocomponent Sci. Technol.8, 83 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80147-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801470",
key = "tagkey198439"
}
@article{tagkey198439,
title = "Deep centres introduced by argon ion bombardment in n-type silicon: J. Garrido, E. Calleja and J. Piqueras Solid-State Electronics24 (12), 1121 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80148-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801482",
key = "tagkey198439"
}
@article{tagkey198439,
title = "Anisotropy control in dry etching: R. H. Bruce Solid-State Technology 64 (Oct 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80149-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801494",
key = "tagkey198439"
}
@article{tagkey198439,
title = "Microelectronic test chips in integrated circuit manufacturing: D. S. Perloff, C. L. Mallory, F. E. Wahl and S. W. Mylroie Solid-State Technology 75 (Sept 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80150-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801500",
key = "tagkey198439"
}
@article{tagkey198439,
title = "Infrared firing of thick film compositions: J. L. Resutek and R. E. Cote Solid-State Technology 39 (June 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "39 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80151-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801512",
key = "tagkey198439"
}
@article{tagkey198440,
title = "Large scale integration and packaging technologies for telecommunication equipment: J. V. Baxter and K. A. Matthews Electl Commun.55 (4), 276 (1980)",
journal = "Microelectronics Journal",
volume = "15",
number = "3",
pages = "40 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80152-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284801524",
key = "tagkey198440"
}
@article{John19843,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "3 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80028-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800282",
author = "John and Butcher"
}
@article{McMahon19845,
title = "Application of electron beams in thermal processing of semiconductor materials and devices",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "5 - 23",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80029-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800294",
author = "R.A. McMahon and H. Ahmed and D.J. Godfrey and M.G. Pitt",
abstract = "Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved.
Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost.
It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology."
}
@article{BrankoL198424,
title = "CMOS schmitt trigger with wide hysteresis",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "24 - 29",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80030-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800300",
author = "Branko L. and Dokić",
abstract = "Two different types of Schmitt trigger are described in this paper. One is made by adding to the circuit of the source NMOS and/or PMOS transistors of the CMOS inverter one resistor and a MOS transistor. Another uses two modified CMOS inverters as voltage comparators and one simple RS latch. The voltage hysteresis can be increased from a few tens of milivolts to approximately the level of the supply voltage less the value of the sum of threshold voltages of NMOS and PMOS transistors."
}
@article{Les198430,
title = "Future applications of a full capability engineering work station",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "30 - 37",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80031-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800312",
author = "Les and Holland",
abstract = "This paper is written to articulate for the user and developer community several important design requirements for a full capability engineering work station (EWS). The viewpoint presented is that of a broad-line merchant semiconductor manufacturer."
}
@article{Adie198438,
title = "SEM/EDX analyses of some interactions between thick film resistors and dielectrics",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "38 - 43",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80032-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800324",
author = "George Adie and Barbara Holodnik and Keith Pitt"
}
@article{Clive198444,
title = "A review of thick film microwave integrated circuit technology",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "44 - 52",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80033-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800336",
author = "Clive and Newport",
abstract = "Continuing improvements in hybrid technology have resulted in the extension of upper frequency limits into the microwave spectrum. Now, microwave assemblies based on thin or thick film technology are relatively common, offering a wide choice of system fabrication methods which are truly solid state and compatible with modern active devices."
}
@article{RonaldP198453,
title = "Solder pastes for microelectronics",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "53 - 64",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80034-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800348",
author = "Ronald P. and Anjard Sr.",
abstract = "Solder paste can be effectively designed into complex automatic handlers and processors particularly for high volume applications, it can be reflowed using a wide variety of techniques. Solder paste lends itself to being used in selective areas and at times in the process where other techniques such as wave soldering, are impossible, or other systems very expensive (such as solder iron). Solder paste lends itself to the use of a hierarchy of metallurgies (and melting points) to allow for “progressive” soldering. Solder paste is also being used to allow effective acreage utilization such as double sided attachment and multiple stacks. At least one manufacturer is combining double stack with three stack attachment—using solder paste. However this would have been impossible with the alternative systems and is attainable now easily and reliably with vapour condensation techniques—to be discussed subsequently. Solder paste is allowing major flexibility to achieve new space saving and reliability improvements."
}
@article{George198465,
title = "Trends in packaging and their impact on circuit board designs",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "65 - 70",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80035-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480035X",
author = "George and Messner"
}
@article{JB198471,
title = "Nicollian, Brews, ,MOS Physics and Technology (1982) Pub. Wiley £70.80.",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "71 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80036-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800361",
author = "J.B. and Butcher"
}
@article{JB198471,
title = "Brodie, Muray, ,The Physics of Microfabrication (1984) Pub. Plenum $49.50.",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "71 - 72",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80037-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800373",
author = "J.B. and Butcher"
}
@article{Keith198472,
title = "Peter Moran,Editors, ,Hybrid Microelectronics Technology (1984) Gordon and Breech Science Publishers.",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "72 - 73",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80038-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800385",
author = "Keith and Pitt"
}
@article{tagkey198474,
title = "DC conduction mechanisms in thin polyimide films: Joseph H. Nevin and Gregory L. Summe Microelectron. Reliab. 21 (5), 699 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "74 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80039-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800397",
key = "tagkey198474"
}
@article{tagkey198474,
title = "Thick film capacitor materials of the powder-glass binary systems and their dielectric properties: Akira Ikegami, Hideo Arima and Katsuo Abe Electrocomponent Sci. Technol. 9, 147 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "74 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80040-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800403",
key = "tagkey198474"
}
@article{tagkey198474,
title = "Silver migration in thick film conductors and chip attachment resins: M. V. Coleman and A. E. Winster Microelectronics J. 12 (4), 23 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "74 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80041-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800415",
key = "tagkey198474"
}
@article{tagkey198474,
title = "Dynamics of charge collection from alpha-particle tracks in integrated circuits: C. M. Hsieh, P. C. Murley and R. R. O'Brien IEEE/Proc. IRPS 38 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "74 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80042-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800427",
key = "tagkey198474"
}
@article{tagkey198474,
title = "Electrical characterisation of crystal defects and oxygen in Czochralski silicon using a gate-controlled diode: Y. Matsuoka and K. Ikuta Solid-State Electronics 24 (11), 1015 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "74 - 75",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80043-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800439",
key = "tagkey198474"
}
@article{tagkey198475,
title = "The effect of oxygen and argon on the interdiffusion of Au−Al thin film couples: Da-Yuan Shih and P. J. Ficalora IEEE/Proc. IRPS 253 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "75 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80044-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800440",
key = "tagkey198475"
}
@article{tagkey198475,
title = "An evaluation of plastic coating for high reliability micro-circuits: Nihal Sinnadural Microelectronics J. 12 (6), 30 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "75 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80045-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800452",
key = "tagkey198475"
}
@article{tagkey198475,
title = "Characterisation of thick film compositions on RCA porcelain-coated steel substrates: A. N. Prabhu, K. W. Hang, E. J. Conlon, T. Hitch and A. Kusenko RCA Review 42, 239 (June 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "75 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80046-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800464",
key = "tagkey198475"
}
@article{tagkey198475,
title = "An air-firing base metal resistor and conductor system for low cost thick film circuit manufacture: E. K. Browne and B. Walton Electrocomponent Sci. Technol. 8, 61 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "2",
pages = "75 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80047-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800476",
key = "tagkey198475"
}
@article{tagkey1984ii,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "ii - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80001-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800014",
key = "tagkey1984ii"
}
@article{John19843,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "3 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80002-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800026",
author = "John and Butcher"
}
@article{Richards19845,
title = "Failure analysis in semiconductor devices – rationale, methodology and practice",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "5 - 25",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80003-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800038",
author = "B.P. Richards and P.K. Footner",
abstract = "In order to carry out effective failure analysis on semiconductor devices, it is essential to have a disciplined analytical schedule to ensure that no relevant information is lost by virtue of any haphazard approach. This paper describes the rationale, approach and procedure for failure analysis (including de-packaging, selective layer removal and location of defects), some procedural problems and the consequent necessity for techniques complementary to microscopy. The results of a number of failure analyses are presented from numerous investigations on devices ranging from high power thyristors to microwave devices, discrete transistors and ICs, originating from field failures, OA goods inwards inspection and in-house fabricated devices. The problems involved in identifying particular mechanisms and causes of failure, and their assignment as being design, materials, processing or applications induced are discussed. Suggestions are made concerning the need for additional techniques for failure analyses on future generation devices."
}
@article{Roth198426,
title = "GaAs mesa diodes made by direct-writing laser stimulated MOCVD",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "26 - 29",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80004-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480004X",
author = "W. Roth and H. Beneking and A. Krings and H. Kräutle",
abstract = "GaAs p-n mesa diodes have been made with the aid of a laser stimulated MOCVD process. Using ns laser pulses the deposition of epitaxial GaAs is limited to the irradiation area. For irradiation a Nd-YAG pulse laser (frequency double, λ = 530nm) has been used. Firstly, an n-type layer was deposited with the conventional MOCVD process at 650°C. Then in the same system, at a substrate temperature of 450°C, a 2.5μm thick p-type mesa was grown using 120mJ/cm2 pulse energy and a pulse repetition rate of 5Hz. The diodes produced this way, showed ideality factors of 1.75 and breakdown voltages of higher than 12V."
}
@article{Krimmel198430,
title = "Time-resolved scanned electron beam annealing of ion-implanted polycrystalline silicon",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "30 - 37",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80005-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800051",
author = "E.F. Krimmel and A.G.K. Lutsch",
abstract = "Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 × 1015 cm−2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950°C and/or 300 s with a seanned and line-focussed electron beam of a current density of 1.1 mA/cm2 at an electron energy of 18 keV. Two annealing stages and two weak reverse ones are observed in contrast to a single annealing stage and a strong single reverse one obtained on phosphorus-or arsenic- implanted polycrystalline silicon layers. A simple model is presented in order to explain the experimental results. The impact of the results on device design for VLSI and solar cells is mentioned."
}
@article{MacQuigg198438,
title = "Drift in switched-capacitor integrators",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "38 - 49",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80006-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800063",
author = "D. MacQuigg and T. Somerville",
abstract = "Imperfections in MOS devices which cause drift over time in the output voltage of a switched-capacitor integrator include junction leakage, offset voltages, charge pumping, and charge-injection (clock feedthrough) from the switches. The origins of these imperfections and techniques to minimise their effect are discussed. With careful processing and design, total drift in a typical CMOS integrator can be reduced to less than one femtoampere and one femtocoulomb per switch cycle. Such high precision integrators may be used as ‘storage registers’ in many systems requiring accurate retention of an analog value."
}
@article{EH198450,
title = "Parasitic MOSFETs in an oxide-isolated bipolar technology: Process-control measurements",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "50 - 53",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80007-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800075",
author = "E.H. and Stevens",
abstract = "The use of measurements on a special MOSFET test structure for process control is reported. Test structure design, test methods and data analysis methods are described. Results derived from the test structure are presented and discussed."
}
@article{Ahmad198454,
title = "Experimental studies of distributed lumped phase shift networks",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "54 - 59",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80008-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800087",
author = "S. Ahmad and R. Singh",
abstract = "Uniformly distributed RC (URC) structures in conjunction with lumped capacitances form a number of useful circuits such as linear phase-shift, phase lag and phase-lead compensating networks. The attenuation and phase responses of some of these networks have been plotted and compared with theory. The results using different values of the lumped capacitance for a given network are discussed."
}
@article{M198460,
title = "VLSI Electronics Volumes 1–6",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "60 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80009-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800099",
author = "M. and Krejcik"
}
@article{tagkey198461,
title = "Low energy LSI and packaging for system performance: Hisao Kanal IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (2), 173 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "61 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80010-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800105",
key = "tagkey198461"
}
@article{tagkey198461,
title = "Chip carriers mounted on large thick film multilayer boards: Hans Danielsson and Olle Strom IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (3), 268 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "61 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80011-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800117",
key = "tagkey198461"
}
@article{tagkey198461,
title = "Cermet resistors on ceramic substrates: Herman S. Hoffman and Earl Stephans IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (4), 387 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "61 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80012-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800129",
key = "tagkey198461"
}
@article{tagkey198462,
title = "Computer-assisted development of hybrid integrated hyperfrequency circuits: W. Senf and C. Werner Nachrichtentechnik Elektronik 31 (8), 318 (1981) (in German)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80013-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800130",
key = "tagkey198462"
}
@article{tagkey198462,
title = "Terminal and cooling requirements for LSI packages: Thomas S. Steele IEEE Trans. Components Hybrid Mfg Technol. CHMT-4 (2), 187 (June 1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80014-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800142",
key = "tagkey198462"
}
@article{tagkey198462,
title = "Bondability problems associated with the Ti-Pt-Au metallisation of hybrid microwave thin film circuits: Robert J. Thompson, Donald R. Cropper, and Bradley W. Whitaker IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (4), 439 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80015-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800154",
key = "tagkey198462"
}
@article{tagkey198462,
title = "Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level: J. M. Dorkel and Ph. Leturcq Solid-St. Electron. 24(9), 821 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80016-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800166",
key = "tagkey198462"
}
@article{tagkey198462,
title = "Punch-through currents in P+NP+ and N+PN+ sandwich structures — I Introduction and basic calculations: J. Lohstroh, J. J. M. Koomen, A. T. Van Zanten and R. H. W. Salters Solid-St. Electron. 24 (9), 805 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80017-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800178",
key = "tagkey198462"
}
@article{tagkey198462,
title = "Punch-through currents in P+NP+ and N+PN+ sandwich structures — II General low-injection theory and measurements: J. Lohstroh, J.J.M. Koomen, A. T. Van Zanten and R. H. W. Salters Solid-St. Electron. 24 (9), 815 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "62 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80018-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928480018X",
key = "tagkey198462"
}
@article{tagkey198463,
title = "The effects of moisture on multilayered ceramic top brazed flat packs: Byrni Drotman and Jim Silva IEEE/Proc. IRPS 188 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "63 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80019-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800191",
key = "tagkey198463"
}
@article{tagkey198463,
title = "Experimental and mathematical determination of mechanical strains within plastic IC packages and their effect on devices during environmental tests: R. J. Usell Jr, and S. A. Smiley IEEE/Proc. IRPS 65 (1981)",
journal = "Microelectronics Journal",
volume = "15",
number = "1",
pages = "63 - ",
year = "1984",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(84)80020-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269284800208",
key = "tagkey198463"
}
@article{John19833,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "3 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80078-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800780",
author = "John and Butcher"
}
@article{Lee19835,
title = "A low-leakage VLSI CMOS/SOS process with thin epi layers",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "5 - 12",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80079-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800792",
author = "J.Y. Lee and D.C. Mayer and P.K. Vasudev",
abstract = "A new VLSI process was successfully developed for short-channel CMOS/SOS circuits on thin 0.3μm epi layers. Two kinds of thin epi material were used. The first was grown by a standard CVD process, while the second was prepared by a double solid phase epitaxial regrowth (DSPE) technique. CMOS/SOS ring oscillators with effective channel lengths ranging from 0.7 to 1.3μm were fabricated. Leakage currents below 3.0pA/μm were achieved on both n-channel and p-channel devices. The DSPE material showed improvement in both mobility and speed."
}
@article{AlanC198313,
title = "An ion milled coplanar SOS technology",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "13 - 21",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80080-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800809",
author = "Alan C. and Sharp",
abstract = "A fabrication process is described for fine dimension coplanar CMOS silicon-on-sapphire using ion-milling and selective oxidation. A novel technique using ion-milling to form a cross-section of the resultant device structure has been developed which allows the bird's beak to be observed by SEM without cleaving the wafer. The effect of island sidewall angle on bird's beak shape has been studied for SOS and bulk silicon structures using this technique."
}
@article{Lin198322,
title = "Electrical characterisation of ion-implanted silicon-on-sapphire",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "22 - 32",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80081-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800810",
author = "Alice L. Lin and Roy Maddox and Jack. E. Mee",
abstract = "Electrical parameters of carrier transport in SOS films were investigated by measuring gate capacitance at frequencies ranging from 1kHz to 10MHz, conductance both in the linear region and in the saturation region and Hall effect as a function of gate bias voltage. The results show that the mobility decreases almost linearly with increasing distance from the Si/SiO2 interface. Similar characteristics were obtained for the carrier concentration profile. The magnitudes drop more than 200 percent from the Si/SiO2 interface to about 0.2μm deep in the Si film. This experimental result is very different from the data predicted by SUPREM. Spreading resistance profiles measured on the same n-type SOS film. after wafer processing show increasing resistivity with increasing distance from the Si surface. The doping profile calculated from spreading resistance data by using the mobility data obtained from the gated Hall effect measurements also indicates that the n-type carrier concentration decreases toward the Si/sapphire interface. The discrepancy between experimental data and the carrier concentration profile predicted by SUPREM can be explained by the existence of deep-level acceptor traps that are evident from Hall effect measurements made on a lightly boron-implanted SOS sample. The temperature dependence of the free carrier concentration shows an activation energy close to 0.31 eV. Mobility and carrier concentration measured by different techniques is discussed."
}
@article{RL198333,
title = "The design and performance of near micron SOS MOSFETs",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "33 - 44",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80082-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800822",
author = "R.L. and Maddox III",
abstract = "SOS MOSFETs with excellent high speed operation capability (>1GHz) have been designed using computer aided process design techniques and fabricated using state of the art processing technology. The process was optimised for 0.8 to 1.0μm channel length SOS devices. The subthreshold current slope of these devices pushes the theoretical limit at 60 millivolts per decade of current which is further evidenced by ring oscillator single stage delays as low as 85 picoseconds. The leakage current of these devices ranged from 1 to 20 picoamps at 1.0μm channel length as the channel width decreased from 10 to 2μm. Additional data is presented on the channel length and width dependence of the threshold voltage, source-drain breakdown voltage, effective channel mobility, and subthreshold current slope."
}
@article{K198345,
title = "Analysis of leakage currents in CMOS/SOS devices",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "45 - 48",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80083-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800834",
author = "K. and Vasudev",
abstract = "Understanding the origin and mechanism of leakage currents in CMOS/SOS transistors constitutes an important step towards the advancement of SOS technology for VLSI applications. In this letter, the bias and geometrical dependence of both n- and p-channel transistors has been analysed in detail. These variations have been correlated with independent lifetime measurements, which indicate that both bulk generation and back surface inversion play important roles in controlling leakage in SOS devices."
}
@article{Iwamura198349,
title = "A high speed and low power CMOS/SOS multiplier-accumulator",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "49 - 57",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80084-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800846",
author = "Jun Iwamura and Shinji Taguchi and Suganuma Kazuo and Kimura Minoru and Tango Hiroyuki and Ichinose Kazuaki and Sato Tai",
abstract = "A high speed and low power 16-bit parallel multiplier, with an accumulator on a chip, which performs 16-bit × 16-bit multiplication plus 35-bit data accumulation in 45ns with 125mW power dissipation, is described. The chip uses a unique modified array scheme to reduce the number of adding stages of partial products while constructing a regular structure. The use of CMOS/SOS technology contributes to reductions in the die area (4.2mm square), power dissipation and operation time. Combination of the modified array scheme and CMOS/SOS achieved ECL speed with CMOS power."
}
@article{JeanPierre198358,
title = "Beam-recrystallised silicon-on-insulator films: can devices lives with grain boundaries?",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "58 - 65",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80085-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800858",
author = "Jean-Pierre and Colinge",
abstract = "Current techniques in which polysilicon films deposited on an insulator are recrystallised have not yet shown the ability to produce large areas of grain boundary-free material. Grain boundaries have been demonstrated to be paths of rapid dopant diffusion, giving rise to shorts in devices. Grain boundaries occurring in the channel of transistors shift the device threshold voltage in an uncontrolled manner. It is, however, possible to control the location of these defects with accuracy and to place the where they will not preclude circuit operation, i.e. in the field area of the circuits. Single-crystal stripes of silicon-on-insulator can be obtained, with no other defects than the localised ones. Good device performances have been obtained using this material, in which the mobility is the same as in bulk silicon."
}
@article{Rensch198366,
title = "Silicon film recrystallisation using e-beam line source",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "66 - 73",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80086-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380086X",
author = "D.B. Rensch and J.Y. Chen",
abstract = "Lateral zone melting from a fast-scanning (50 to 30 cm/s) E-beam line source has been used to grow single-crystal films with an area limited only by the E-beam scan field. Electron backscattering contrast and etch pit techniques have been used to study the crystallographic orientation and extent of single crystal silicon film growth on SiO2-coated silicon wafers. (100) textured films have been grown on these (0.35 to 1.0 μm thick) SiO2 layers containing periodic openings to permit seeding during recrystallisation. Recrystallisation of non-seeded polysilicon produced (111)-textured films. Enhancement mode n-channel MOSFETs have been made in both types of films. Channel mobility as high as 600 cm2/V-sec has been measured in the (100) textured films."
}
@article{Inoue198374,
title = "Electron-beam recrystallised polysilicon on silicon dioxide",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "74 - 81",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80087-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800871",
author = "Tomoyasu Inoue and Kenji Shibata",
abstract = "Lateral seeded recrystallisation of silicon layer evaporated in an ultra high vacuum has been studied experimentally by scanning electron beam annealing. Silicon layers on the seed area were grown epitaxially during the evaporation. Silicon layers above 1 μm thickness were successfully recrystallised, resulting in reproducible lateral epitaxy of ∼40μm in length. A pseudo-line shaped electron beam formed by high frequency oscillation enabled dimensional enlargement of lateral epitaxial growth to 120μm in length and 150μm in width. Crystalline properties were characterised by Rutherford backscattering measurement and electron channelling pattern observation."
}
@article{Bösch198382,
title = "Influence of light on NMOS transistors in laser μ-zone crystallised silicon layers",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "82 - 87",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80088-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800883",
author = "M.A. Bösch and D. Herbst and S.K. Tewksbury",
abstract = "Device quality isolated thin Si layers have been achieved by laser μ-zone crystallisation under high bias temperature. The influence of light on the properties of NMOS polycrystalline silicon gate transistors fabricated in these large area laser crystallised silicon layers is investigated. Both leakage current and threshold voltage are found to be light sensitive. The light sensitivity of the threshold voltage results in a nearly logarithmic dependence of the drain current as a function of the light intensity. A first order model predicts this behaviour correctly. The output characteristics of the transistors improve with increasing light intensity."
}
@article{Das198388,
title = "Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "88 - 107",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80089-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800895",
author = "K. Das and G. Shorthouse and J. Butcher and K.V. Anand",
abstract = "The feasibility of growing epitaxial layers of silicon on silicon substrates with a buried oxide layer formed by the implantation of oxygen ions, has been studied.
Buried implanted oxide layers have been formed by high dose implantation of oxygen ions in silicon. The effect of dose at a given energy for a given peak concentration on the distribution profile of oxygen has been studied. An approximately Gaussian distribution is observed at doses contributing less than the stoichiometric requirement of oxygen for the formation of silicon dioxide. A saturation in the peak oxygen concentration is reached when the stoichiometric requirement is exceeded. A consequent reduction in the interface damage is also observed. Other parameters being equal, at higher substrate temperatures the interface damage is descreased.
It has been attempted to optimise conditions for a dose of 1.4×1018 cm−2 at 200 keV which provided the stoichiometric concentration only at the peak of the distribution.
The epitaxial layers deposited on substrates maintained at approx. 550°C during implantation have a crystalline quality comparable to those of layers on untreated substrates. Fabricated p-n junction diodes have low leakage currents and high breakdown voltages. The minority carrier lifetime is comparable to that in diodes processes similarly but without an implanted oxide layer."
}
@article{tagkey1983108,
title = "IEEE SOS/SOI Technology Workshop: Jackson Hole, Wyoming, USA-October 4–6 1983",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "108 - 110",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80090-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800901",
key = "tagkey1983108"
}
@article{Kugimiya1983111,
title = "Characteristics of micro-groove zone-melting recrystallised Si islands",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "111 - 114",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80091-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800913",
author = "K. Kugimiya and S. Akiyama and S. Ogawa and N. Yoshii and Y. Terui and M. Yoneda"
}
@article{Ishida1983114,
title = "A new method of SOS epitaxial growth with amorphous Si buffer layer",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "114 - 115",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80092-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800925",
author = "M. Ishida and H. Ohyama and H. Wakamatsu and H. Abe and Y. Yasuda and T. Nishinaga and T. Nakamura"
}
@article{Yoshida1983116,
title = "Characteristics of MOS FETs on double solid-phase epitaxial SOS",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "116 - 117",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80093-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800937",
author = "M. Yoshida and M. Nakahara and M. Kimura and S. Taguchi and K. Maeguchi and H. Tango"
}
@article{Veloric1983117,
title = "Radiation-hard CMOS/SOS: An ideal technology for the space environment",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "117 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80094-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800949",
author = "H. Veloric and W. Morris"
}
@article{Friedman1983117,
title = "A two level metal, software compatible, CMOS/SOS gate array family",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "117 - 118",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80095-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800950",
author = "Eby Friedman and Ghassan Yacoub"
}
@article{Keith1983119,
title = "The physics and chemistry of liquid crystal devices",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "119 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80096-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800962",
author = "Keith and Pitt"
}
@article{Keith1983119,
title = "Polymer materials for electronic applications",
journal = "Microelectronics Journal",
volume = "14",
number = "6",
pages = "119 - 120",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80097-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800974",
author = "Keith and Pitt"
}
@article{John19833,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "3 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80125-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801256",
author = "John and Butcher"
}
@article{Wu19835,
title = "High slew rate CMOS operational amplifier employing internal transistor compensation",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "5 - 13",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80126-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801268",
author = "Bingxin Wu and John Mavor",
abstract = "A compact, high slew rate, low distortion CMOS operational amplifier employing an internal feedback transistor instead of the more usual compensation capacitor is reported, which is fabricated using an n-well CMOS silicon-gate technology. The operational amplifier has an open-loop gain exceeding 60dB, a slew rate of +36/−50 V per microsecond, a one-per-cent settling time of 0.25 microsecond, a total harmonic distortion of −73 dB and a power dissipation of 11.5 mW. The design principles are summarised with particular emphasis on the novel transistor feedback compensation circuit.
Results for a switched-capacitor filter employing such an operational amplifier are summarised."
}
@article{EH198315,
title = "Consequences of contact resistance in very-small-geometry CML gates",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "15 - 20",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80127-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380127X",
author = "E.H. and Stevens",
abstract = "The effects of contact resistance on the performance of very-small-geometry, CML gates are investigated. Relationships among specific contact resistivity, logic swing, noise margin, and power consumption per gate are derived. From these relationships, it is shown that the principal design consequence of contact resistance is an increase in minimum power consumption per gate."
}
@article{BrankoL198321,
title = "CMOS regenerative logic circuits",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "21 - 30",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80128-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801281",
author = "Branko L. and Dokić",
abstract = "New solutions of inverter, NAND and NOR logic circuits with hysteresis transfer characteristic (Schmitt triggers) consisting of three standard CMOS logic circuits and one resistor are described in this paper. The input circuit determines the logic function of a Schmitt trigger and the other two are connected in an inverter configuration. Through resistor R and the inverters, the positive feedback loop is closed during the change of output state. Besides the theoretical analysis of transfer function and conditions of existence of hysteresis, experimental results are given in the paper."
}
@article{Umesh198331,
title = "Novel switched capacitor realisations of floating FDNC",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "31 - 34",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80129-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801293",
author = "Umesh and Kumar",
abstract = "Some novel switched capacitor sections are proposed that can simulate a floating FDNC (FDNR) based upon the bilinear transformation from analog active RC networks."
}
@article{Kirby198335,
title = "Residual stress in thick films",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "35 - 41",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80130-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380130X",
author = "P.L. Kirby and A. Owens"
}
@article{Kundu198343,
title = "A data-base for IC mask making",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "43 - 52",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80131-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801311",
author = "N.N. Kundu and S.N. Gupta and A.K. Bagchi and D.R. Nagpal and A.V. Ramani and S. Khokle",
abstract = "Photomasks are very important in the manufacturing of integrated circuits and should be of very high quality with low defect density and very good edge definition. A photomask fabrication process involves various photo-imaging, processing, measurement and quality control steps. The complexity and sophistication of the process requires that either the operator be extremely killed and conversant with all the process steps involved as per requirements of given set of masks or that the entire process be computerised.
CEERI has developed a data-base for the complete processing of emulsion and hard surface masks. This has been generated using the IMAGE 1000 software of a HP 1000 computer system and describes each process step such as, exposing with pattern generator, image repeater and contact printer. Several mask processing procedures, critical dimension measurements and quality control steps have also been included. In fact, depending on the job requirements, the operator can simply enter all parameters through the query system of the data-base, which can be conveniently listed either on hard copy or on a terminal for setting up various work stations and process steps of mask making. In this paper, this data-base has been described with its advantages and practical usage."
}
@article{Joachim198353,
title = "How a computer is developed and produced",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "53 - 75",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80132-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801323",
author = "Joachim and Heusler",
abstract = "The computer has been voted ‘man of the year’ by ‘Time’ magazine (Fig. 1). Although this decision should not be taken too seriously, it nevertheless demonstrates that both the beneficial and the adverse consequences of computers affect each one of us in one way or another, to an ever-increasing degree. This paper is intended to take some of the mystery out of computers, and to explain the methods and tools used in their development and production. The whole gamut of development and production steps will be introduced, from system design to quality assurance by way of computer-aided design. The paper is rounded off with some general remarks on the economic importance of computing, and the consequences of a computer society."
}
@article{tagkey198377,
title = "Optoelectronics: An introduction",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80133-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801335",
key = "tagkey198377"
}
@article{tagkey198377,
title = "Gallium: Arsenide and related compounds 1982",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "77 - 78",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80134-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801347",
key = "tagkey198377"
}
@article{tagkey198378,
title = "Speech enhancement",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "78 - 79",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80135-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801359",
key = "tagkey198378"
}
@article{tagkey198380,
title = "Packaging trade-offs for an LSI-oriented very high-speed computer, the HITAC M-200H: Tsuneyo Chiba, Akira Masaki, Kennichi Furumaya and Satoshi Hososaka IEEE Trans. Components, Hybrids Mfg Technol. CHMT-4, (2) 166 (June 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "80 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80136-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801360",
key = "tagkey198380"
}
@article{tagkey198380,
title = "The influence of the area of a thin film capacitor on the breakdown voltage: T. Berlicki Electrocomponent Sci. Technol. 9, 111 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "80 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80137-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801372",
key = "tagkey198380"
}
@article{tagkey198380,
title = "The effect of high speed laser trimming on accuracy and stability of thick film resistors: Rene E. Cote Electrocomponent Sci. Technol. 8, 181 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "80 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80138-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801384",
key = "tagkey198380"
}
@article{tagkey198380,
title = "Design and evaluation of RC active filters for hybrid thick film implementation: Robert Leuenberger and George S. Moschytz IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (3), 273 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "80 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80139-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801396",
key = "tagkey198380"
}
@article{tagkey198381,
title = "interactive design system for hybrid ICs: Roshi Shiraishi, Kaoru Kawamura and Masaaki Hayashi Electrocomponent Sci. Technol. 8, 221 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "81 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80140-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801402",
key = "tagkey198381"
}
@article{tagkey198381,
title = "Erlevel insulation reliability evaluation: Seph J. Gajda, Gary J. Lindstrom and Onald J. Delorenzo IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (4), 509 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "81 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80141-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801414",
key = "tagkey198381"
}
@article{tagkey198381,
title = "Ider attachment of leaded components to ck film hybrids: Cholas T. Panousis and R. C. Kershner IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (4), 411 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "81 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80142-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801426",
key = "tagkey198381"
}
@article{tagkey198381,
title = "Solder post attachment of ceramic chip carriers to ceramic film integrated circuits: Peter M. Hall IEEE Trans. Components Hybrids Mfg Technol. CHMT-4 (4), 403 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "81 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80143-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801438",
key = "tagkey198381"
}
@article{tagkey198381,
title = "Advances in low cost silver-containing thick film conductors: Barry E. Taylor, John J. Felten, Samuel J. Horowitz, John R. Larry and Richard M. Rosenberg Electrocomponent Sci. Technol. 9, 67 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "5",
pages = "81 - 82",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80144-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380144X",
key = "tagkey198381"
}
@article{John19833,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "3 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80001-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800019",
author = "John and Butcher"
}
@article{C19835,
title = "Trends in gate array technology",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "5 - 10",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80002-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800020",
author = "C. and Hardage",
abstract = "This paper takes a look at where the IC industry is headed today in the evolution of gate array technology. Projections are made of advancements in gate array technology including both array architecture and design methodology.
Historically, the concept of a gate array is at least 15 years old. At that time the basic IC technologies were TTL and ECL bipolar, and P-channel MOS; LSI referred to gate complexities greater than 100. The die sizes were small (100 mils on a side), number of masks few (6–10), and layout geometries were measured in mils. Powerful standard logic families in TTL, ECL, and later CMOS were rapidly expanding. Customised LSis, other than expensive fully hand drawn custom designs, were best obtained using standard cell library approaches. Prior to 1970 there were capable fold and route computer programs which adequately designed custom layouts in a short time with these pre-drawn cells.
Though gate arrays existed they were not popular. Standard high power TTL arrays with three layers of interconnect metal and bulk CMOS arrays existed prior to 1970. Maximum gate counts were just over 100 and the number of required masks had increased, due in part because of more than one layer of metal interconnection.
Neither the user community nor the IC manufacturers themselves perceived the gate array as particularly useful. The cell library approach was the preferred way to meet lower volume customised requirements, and it was less expensive than full custom. Gate arrays, and to a lesser extent, standard cell designs, were considered wasteful of silicon and useful only for small size and modest performance increase. The military was the primary customer base.
The early 1970s saw the IC industry push toward ever greater density and performance. Complexity grew while cost per function came down. The popular standard logic product lines pushed into the MSI level. The earliest microprocessors emerged with their reliance on memories. Gate arrays seemed lost in the shuffle, awaiting improvements in both processing and design methodology."
}
@article{Prazic198311,
title = "A ‘low-risk’ design approach to silicon integrated circuits",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "11 - 19",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80003-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800032",
author = "B.D. Prazic and J.S. Whitelegge"
}
@article{Gregorian198321,
title = "Single-chip 1200 bits/sec modem filters",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "21 - 29",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80004-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800044",
author = "R. Gregorian and Shih-Chung Fan",
abstract = "A fully integrated switched-capacitor CMOS filter chip for a full-duplex 1200 bits/sec PSK modem is described. The chip contains two switched-capacitor band-pass filters, compromise delay equalisers and control logic circuits."
}
@article{MR198331,
title = "A simple NMOS constant voltage and current source",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "31 - 37",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80005-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800056",
author = "M.R. and Haskard",
abstract = "This paper describes a simple two transistor NMOS circuit which can be used either as a constant voltage or current source, operating over both a wide range of input voltage and temperature. Results from experimental multi-project chips are also included."
}
@article{Branko198339,
title = "Modified CMOS inverters",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "39 - 44",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80006-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800068",
author = "Branko and Dokić",
abstract = "Inverters with voltage controlled threshold at a constant supply voltage have been obtained by connecting a MOS transistor to the basic CMOS inverter source circuit. Control is exercised through the additional transistor's gate. Modified inverters with three and four transistors are described."
}
@article{Ahmad198345,
title = "Experimental study of two-terminal distributed parameter impedance networks",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "45 - 49",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80007-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380007X",
author = "S. Ahmad and R. Singh",
abstract = "This paper discusses the simple two-terminal uniformly distributed RC (URC) networks which give a variety of impedance characteristics depending on the selection of the terminals of well known uniformly distributed RC (URC) transmission line. These impedances have the advantages of being very small in size, simple to fabricate and easy to use in conjunction with lumped or integrated circuits. The experimental results have been compared with the theoretically computed results and are found to be in excellent agreement with them."
}
@article{Kumar198351,
title = "Accurate single section model of charge coupled devices for computer aided design",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "51 - 56",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80008-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800081",
author = "U. Kumar and V.K. Sagar",
abstract = "Based on the representation of charge coupled devices (CCDs) by an interdigitally distributed RC network which describes the experimental results accurately,1 a rational two-port model is presented. The model emerges as a result of the equivalence to a generalised uniformally distributed RC network2 to which the technique postulated by Dutta Roy and Kumar3 of continued fraction expansion and truncation of the two-port admittance parameters is applied."
}
@article{M198359,
title = "£15.95 J. Mavor, M.A. Jack, P.B. Denyer, ,Introduction to MOS ISI Design (1983) Addison-Wesley Publishing Co 0-201-14402-6.",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "59 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80009-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800093",
author = "M. and Krejcik"
}
@article{M198359,
title = "Rich's Guide to Santa Clara County's Silicon Valley — 1983 Edition by RICHARD E. SCHNEIDER Rich's Enterprises ISSN: 0734-2713 £45.00 190 pages",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "59 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80010-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380010X",
author = "M. and Krejcik"
}
@article{R198360,
title = "Y. Suematsu,Editors, ,Optical Devices and Fibres (1982) North Holland Publishing Co.",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "60 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80011-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800111",
author = "R. and Stoddart"
}
@article{M198360,
title = "(Vols 1&4) Robert F. Pierret, Gerald W. Neudeck, ,Modular Series on Solid State Devices (Vol 1); 0-201-05321-7 (Vol 2); 0-201-05322-5 (Vol 3); 0-201-05323-3 (Vol 4) (1983) Addison-Wesley Publishing Co 0-201-05320-9 (Vol 1); 0-201-05321-7 (Vol 2); 0-201-05322-5 (Vol 3); 0-201-05323-3 (Vol 4).",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "60 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80012-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800123",
author = "M. and Krejcik"
}
@article{tagkey198361,
title = "Multi-MOS structure speeds layout of VLSI chips: Jacques Majos and Marie Josee Martin Electronics 111 (17 Nov 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "61 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80013-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800135",
key = "tagkey198361"
}
@article{tagkey198361,
title = "C-MOS inspires the best chips yet for computer, consumer and communication applications: John G. Posa Electronics, 103 (6 Oct 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "61 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80014-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800147",
key = "tagkey198361"
}
@article{tagkey198361,
title = "Devices and circuits for bipolar (V) LSI: Jan Lohstroh Proc. IEEE 69 (7), 812 (July 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "61 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80015-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800159",
key = "tagkey198361"
}
@article{tagkey198361,
title = "Gallium arsenide integrated circuits technologies: M. Cathelin Acta electron. 23 (3), 193 (1980), (in French)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "61 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80016-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800160",
key = "tagkey198361"
}
@article{tagkey198361,
title = "Review of ion-implanted bubble devices: P. I. Bonyhard Microelectronics J. 12 (5), 5 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "61 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80017-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800172",
key = "tagkey198361"
}
@article{tagkey198361,
title = "Magnetic bubble propagation for the dual conductor current-access test circuit: T. Kawasaki, T. Tsuruoka, H. Akiyama, K. Kawamura and T. Miyashita Microelectronics J. 12 (5) (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "61 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80018-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800184",
key = "tagkey198361"
}
@article{tagkey198362,
title = "Preparation and some magnetic properties of amorphous rare earth-transition metal films with perpendicular anistropy for bubble memories: T. Katayama Microelectronics J. 12 (5), 23 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "62 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80019-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800196",
key = "tagkey198362"
}
@article{tagkey198362,
title = "C-MOS PROM density hits 16-K: James B. Brinton Electronics 193 (25 August 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "4",
pages = "62 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80020-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800202",
key = "tagkey198362"
}
@article{John19833,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "3 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80038-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380038X",
author = "John and Butcher"
}
@article{A19835,
title = "Trends in semi-custom integrated circuits — An overview",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "5 - 11",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80039-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800391",
author = "A. and Pyne",
abstract = "The semi-custom market is one of the fastest growing. Nearly all of the major semiconductor manufacturers are now offering a semi-custom service and with the comparatively low cost of the device (compared to full custom) many OCMs now see this as a way of bringing their design up-to-date without incurring the enormous costs of the more conventional way, using standard or custom devices."
}
@article{G198313,
title = "The future of custom MOS",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "13 - 19",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80040-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800408",
author = "G. and Shenton",
abstract = "The last three years have seen the rapid development of the semi-custom market as new products and design tools enable systems designers to integrate moderately complex complex circuits quickly and safely. With few exceptions, the majority of products offered are still an order of magnitude less complex than the most complex standard products and do not offer on-chip memory, analog elements, or other more specialised functions.
The paper presents the author's view of the future of full custom design systems with which complex integrated circuits of full functionality can be achieved. Limiting factors such as the availability of advanced technology from custom suppliers, the development and availability of comprehensive CAD tools and the user training issue are examined. Design methodology — hierarchical design and silicon compilers vs. libraries of functional elements — are also examined and predictions made for their relative position in the future of custom design.
The paper concludes with a discussion of the methods by which custom services and CAD tools will be brought to the system designers, through design centres and networked in-house CAD systems."
}
@article{AJ198321,
title = "Architectural considerations for an uncommitted circuit intended for combined digital and analogue functions",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "21 - 30",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80041-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380041X",
author = "A.J. and Kemp",
abstract = "This paper describes the architecture of an uncommitted circuit intended for the effective implementation of mixed digital and analogue functions on the same chip. Practical examples are given to illustrate the degree of utilisation of available components possible in real situations. For comparison purposes the architectures of two commercially available circuits are first discussed. Potential problems affecting ease of use and efficiency are highlighted. These problems are caused by the relative positions of the digital and analogue sections as well as the use of dedicated subsections. An alternative approach is proposed and details of the new uncommitted circuit employing the proposed principles are given. With the resulting architecture, an improvement in the ease of use and achievable efficiency of this type of uncommitted circuit is possible."
}
@article{Walker198331,
title = "Testing logic arrays",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "31 - 39",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80042-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800421",
author = "R. Walker and D. King",
abstract = "Designing for testability is the aim of every manufacturer of semi-custom devices. As these devices become more complex with unusually high pin counts, manufacturers must be able to test them whilst maintaining the level of quality and efficiency. This paper looks at Level Sensitive Scan Design, Scan testing and describes briefly the LDSI development system which has simplified the testing of semi-custom circuits developed by LSI."
}
@article{Dantec198341,
title = "High speed CMOS gate arrays",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "41 - 52",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80043-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800433",
author = "A. Dantec and J. Desuche",
abstract = "A family of high speed CMOS gate arrays has been developed using single metal layer advanced CMOS processing. In this paper we describe the array structure and present the performances obtained on a test vehicle designed on a 1200 gates matrix.
Further on, we discuss the user-manufacturer interface by presenting the design procedure and the software aids associated with each step of the development flow."
}
@article{Chan198353,
title = "Developments in products, technology and design tools",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "53 - 59",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80044-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800445",
author = "S. Chan and P. Madan",
abstract = "Logic arrays can now provide the design engineer with the same level of VLSI complexity capacity as that currently in use with microprocessors and memories. This paper examines some of these complex logic arrays and the need to develop higher performance arrays is discussed."
}
@article{Derek198361,
title = "The use of bipolar semiconductor junctions in linear circuit design",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "61 - 86",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80045-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800457",
author = "Derek and Bray",
abstract = "The concept of translinear circuits has been around for many years, dating back to the use of semiconductor diodes as a dc controlled wide-band attenuator in 1961. With the advent of bipolar integrated circuit technology such circuits have proved to be very effective in providing many functions in linear ICs. The translinear concept basically relies on utilising, to advantage, the fundamental logarithmic characteristics of a semiconductor junction and the ability to match device parameters very closely on integrated circuits.
This paper will present the fundamental relationship of a bipolar semiconductor junction and show how it affects the operation of known circuit configurations and also will introduce new circuit configurations taking advantage of the fundamental junction properties. The semi-custom Monochip is ideally suited to these applications due to the availability of large numbers of identical geometry, matched transistors."
}
@article{S198387,
title = "226 pages G.L. Simons, ,Towards Fifth Generation Computers (1983) NCC Publications.",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "87 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80046-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800469",
author = "S. and McClelland"
}
@article{PA198387,
title = "The Impact of Chip Technology on Conditions and Quality of Work The report is available from the Metra Consulting Group Limited, 42 Vicarage Crescent, London SW11 3LB, or from the Netherlands Ministry of Social Affairs and Employment and is priced at £30.",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "87 - 88",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80047-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800470",
author = "P.A. and Walker"
}
@article{PWK198388,
title = "The Fourth Electronic Revolution Edited by BPA (Technology and Management) Ltd Publisher: Financial Times Business Information Ltd 153 pages £95",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "88 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80048-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800482",
author = "P.W.K. and Rathkey"
}
@article{tagkey198389,
title = "Monolithic microwave circuits: R. S. Pengelly Electron. Power 379 (May 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "89 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80049-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800494",
key = "tagkey198389"
}
@article{tagkey198389,
title = "Semiconductor industry silicon: physical and thermodynamic properties: Carl L. Yaws, Larry L. Dickens, Ralph Lutwack and George Hsu Solid-St. Technol. 87 (January 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "89 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80050-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800500",
key = "tagkey198389"
}
@article{tagkey198389,
title = "The diffusion of silicon in germanium: J. Raisanen, J. Hirvonen and A. Anttila Solid-St. Electron. 24, 333 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "89 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80051-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800512",
key = "tagkey198389"
}
@article{tagkey198389,
title = "Hot-wall CVD Tungsten for VLSI: Nicholas E. Miller and Israel Beinglass Solid-St. Technol. 79 (December 1980)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "89 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80052-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800524",
key = "tagkey198389"
}
@article{tagkey198389,
title = "Progress in and technology of low-cost silver containing thick-film conductors: Barry E. Taylor, John J. Felten and John R. Larry IEEE Trans. Components, Hybrids, Manuf. Technol. CHMT-3(4) 504 (December 1980)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "89 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80053-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800536",
key = "tagkey198389"
}
@article{tagkey198389,
title = "Low frequency excess noise in SOS MOS FETs: S. T. Hsu RCA Rev. 41, 577 (December 1980)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "89 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80054-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800548",
key = "tagkey198389"
}
@article{tagkey198390,
title = "Oxidised porous silicon isolates better than sapphire: Charles Cohen Electronics 77 (27 January 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "90 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80055-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380055X",
key = "tagkey198390"
}
@article{tagkey198390,
title = "Ni-P as a new material for thick-film technology: I. Barycka, B. Holodnik and A. Misiuk Electrocomponent Sci. Technol. 7, 221 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "90 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80056-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800561",
key = "tagkey198390"
}
@article{tagkey198390,
title = "GaAs semi-insulating materials: key parameters and characterisation methods: G. M. Martin, G. Jacob and G. Poiblaud Acta Electron. 23(1) 37 (1980) (in French)",
journal = "Microelectronics Journal",
volume = "14",
number = "3",
pages = "90 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80057-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283800573",
key = "tagkey198390"
}
@article{John19833,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "3 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80218-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802183",
author = "John and Butcher"
}
@article{Sinnadurai19835,
title = "Assessments of micropackaged integrated circuits in high reliability applications",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "5 - 25",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80219-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802195",
author = "N. Sinnadurai and D. Roberts",
abstract = "An earlier study showed that plastic coatings could provide adequate protection of microcircuits for long life applications. This promise that low cost techniques could be used in high reliability telecomms applications encouraged further investigations of micropackaged integrated circuits. Transistor arrays and operational amplifiers typical of those required for hybrids in telecomms applications were used as the test vehicles. The micropackages included SO packages supplied as standard components and leadless ceramic and epoxy-glass chip carriers coated with the more promising plastics. These micropackaged ICs have been exposed to a range of damp heat stress in non-saturating autoclaves and thermal overstress in ovens for extended durations representing operation for more than 20 years in telecomms environments, and the failures and survivors were then analysed in detail. Very promising results have been obtained, showing that the majority of the micropackaged ICs had reliabilities that would survive 20 year lifetimes, and some — in particular Ti-Pt-Au metallised, silicon nitride passivated ICs in plastic-coated and lidded epoxy-glass chip carriers — would comfortably exceed this lifetime.
The results are very encouraging indeed for the prospects of low-cost, plastic micropackaging for high reliability applications."
}
@article{Pieters198327,
title = "I2L speed improvement by an ion implantation modification to a standard bipolar process",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "27 - 35",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80220-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802201",
author = "J.P. Pieters and A.G.K. Lutsch and H.F. le Roux",
abstract = "A technique is described of the modification of a standard bipolar process by the addition of a single ion implantation step with one extra photo mask to give a relatively high speed-power product and a high yield of analog compatible I2L circuits. The method is flexible in that the I2L device characteristics are determined mainly by the ion implantation parameters, and the rest of the bipolar process can be tailored for analog device requirements. Experimental results are presented which show an I2L βup of 6 per collector for the npn transistors and a speed-power product of 0.5 pJ for a fan-out of 4."
}
@article{Claesen198337,
title = "DIANA.SC — a versatile top-down analysis tool for switched-capacitor circuits",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "37 - 53",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80221-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802213",
author = "L. Claesen and H. de Man and J. Vandewalle and J. Rabaey",
abstract = "In this paper a general and designer-oriented top-down switched capacitor analysis tool, DIANA.SC is presented. The top-down feature of DIANA.SC allows for the analysis at a top level with ideal SC-circuits, at an intermediate level with SC-circuits containing resistors and op-amp poles and at a low level containing MOS-transistors and non-linear capacitors. The basic features and analysis modes at each of the levels are explained and illustrated. Several practical examples indicate the analysis levels and operation modes."
}
@article{Corsi198355,
title = "A review of RAM testing methodologies",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "55 - 71",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80222-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802225",
author = "A. Corsi and C Morandi",
abstract = "The foundations of RAM testing theory are reviewed and several test procedures designed to cover logical faults are examined in the light of experience of problems most frequently encountered. Widely used test patterns, derived on the basis of simple considerations, are analysed within the framework of the above theory. The results of this analysis, summarised in a table, provide a useful guide for the choice of the test patterns to be used for characterisation or volume testing of RAM chips."
}
@article{Nandi198373,
title = "New insensitive active ideal inductance with single resistor control using current conveyors",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "73 - 74",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80223-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802237",
author = "R. Nandi and S. Nandi",
abstract = "A new active-RC network for ideal inductance simulation using second generation current conveyor (CCII) active elements is proposed. The inductance is single resistor controllable and is insensitive to active parameter variations -these features are desirable for microcircuit fabrication."
}
@article{Nandi198375,
title = "New equal-valued grounded-RC realisation of third-order lowpass Butterworth characteristic using DVCCS",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "75 - 76",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80224-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802249",
author = "R. Nandi and S. Nandi",
abstract = "A novel active circuit realisation of a third-order lowpass Butterworth characteristic using the differential voltage controlled current source (DVCCS) active element is described. The proposed circuit configuration has only two resistors and three capacitors which are all equal-valued and grounded. This makes the circuit quite attractive for microminiaturisation. Active and passive sensitivities of the network are low, and, in general may be expressed as |Sω0|≤1,|SQ|≤1."
}
@article{Milos198377,
title = "Frank J. Derfler, ,Microcomputer Data Communication Systems (1982) Prentice Hall,Publisher.",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80225-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802250",
author = "Milos and Krejcik"
}
@article{T198377,
title = "Britain's Top 500 Electronics and Electrical Companies JORDAN & SONS (SURVEYS) LIMITED £60",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80226-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802262",
author = "T. and Brazier"
}
@article{tagkey198379,
title = "World abstracts",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "79 - 80",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80227-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802274",
key = "tagkey198379"
}
@article{tagkey1983iii,
title = "Notes for contributors",
journal = "Microelectronics Journal",
volume = "14",
number = "2",
pages = "iii - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80228-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283802286",
key = "tagkey1983iii"
}
@article{tagkey1983CO2,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "CO2 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80162-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801621",
key = "tagkey1983CO2"
}
@article{John19833,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "3 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80163-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801633",
author = "John and Butcher"
}
@article{AGK19835,
title = "Ion range statistics by a fourier series",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "5 - 13",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80164-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801645",
author = "A.G.K. and Lutsch",
abstract = "Most statistics for predicting the impurity distribution of ions implanted in solids use a Gaussian distribution multiplied by a polynomial. A range statistics is proposed using a Gaussian and elements of a Fourier series, which should be useful, in particular for range prediction at higher energies."
}
@article{Lutsch198315,
title = "Contribution to ion implantation through a narrow slit at higher energies",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "15 - 20",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80165-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801657",
author = "A.G.K. Lutsch and H. Runge",
abstract = "For the implantation of boron into silicon through submicrometre-width slits (of the order of 0.5 μm) at an energy of 1 MeV, the maximum ion concentration at a distance equal to the projected range does not reach, even at the centre, the corresponding value for larger windows. Even at lower energies the mask edges have an influence on the ion concentration if the slit width is of the order of 10 μm."
}
@article{Lutsch198321,
title = "Implantation through a window with medium to high energy ions",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "21 - 34",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80166-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801669",
author = "A.G. Lutsch and D.N. Oliver",
abstract = "When implanting ions through a window the equidensity lines of ions are influenced by higher moments of the impurity ion distribution versus depth into the substrate. This effect is particularly noticeable if the ions are light and the ion energy is high, say higher than 300 keV. The shape of pn junctions of directly implanted shallow transistors is affected. Homogenisation of the electrical field, being necessary for high voltage, or high frequency operation is not possible, without considering the fine structure of the ion distribution near the surface and particularly near the mask edges.
The influence of higher moments is also important for the case of direct implantation of wells for CMOS.
Ion equidensity distributions below a window in the mask are shown for boron and arsenic implantation into silicon at energies between 70 keV and 800 keV."
}
@article{Balasubramanyam198335,
title = "Germanium selenide as a negative inorganic resist for ion beam microfabrication",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "35 - 42",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80167-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801670",
author = "K. Balasubramanyam and I. Adesida and A.L. Ruoff and E.D. Wolf",
abstract = "The ion beam exposure characteristics of an inorganic negative resist, silver sensitised a-Ge0.25Se0.75, was studied. It was found that by increasing the angle of incidence of deposition, the lithographic sensitivity was considerably enhanced. The increase for 60 keV protons was from 1.4×10−5 C/cm2 to 1.4×10−6 C/cm2 for vapor beam inclinations of 0° to 80° with respect to the normal. The applicability of this resist for pattern duplication using a'see-through' mask was investigated. The results are presented showing replicated mask patterns with 0.5 μm features that were exposed in this resist by irradiating the mask with a proton beam from a conventional ion implantation system. In the ion exposed and developed patterns, the concentration of silver was found to be less along the edges than in the interior of the remaining resist. The ion beam enhanced silver dissolution mechanism is discussed."
}
@article{Bhattacharyya198343,
title = "Passivation of gallium arsenide by reactively sputtered gallium nitride thin films",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "43 - 48",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80168-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801682",
author = "A.B. Bhattacharyya and E. Lakshmi",
abstract = "An attempt has been made to correlate the interface state characteristics of the GaN/GaAs MIS structure with the composition at the interface as obtained from Auger spectroscopy. The considerably reduced interface state density of nitrogen annealed samples is due to the reduction of the oxygen content and the corresponding increase of the nitrogen content at the GaAs/GaN interface. The interface state density for this MIS structure shows a two peaked distribution and is characterised by a much lower interface state density in the upper half of the band gap in comparison with native oxides and other deposited insulators."
}
@article{Prasad198349,
title = "Diffusion characteristics of antimony and phosphorus spin-on sources",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "49 - 60",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80169-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801694",
author = "P.M. Prasad and V.P. Sundarsingh",
abstract = "Antimony and phosphorus spin-on sources were developed and the different structures were characterised. The effect of different ambients on the diffusion of both the elements into silicon was investigated. It was observed that in N2 ambient, Sb2O3 was reduced and SiO2 formed at the interface reduced the diffusion of Sb into silicon. In O2 ambient, at 1200°C, the oxidation rate of the Si surface competes with the diffusion process resulting in lower surface concentration. Increase in prebaking temperature was found to increase the sheet resistance of antimony diffused samples. From thermo-dynamic calculations it is shown that there is a greater probability for the reduction of Sb2O3 at lower temperatures than at higher temperatures."
}
@article{Khan198361,
title = "An active-C resonator and its applications in realising monolithic filter and oscillator",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "61 - 66",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80170-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801700",
author = "I.A. Khan and M.T. Ahmed",
abstract = "The internal dynamics of operational amplifiers are utilised with capacitors to simulate an active-C parallel RLC-resonator. The applications of the simulated circuit are studied in realising a filter and a variable frequency oscillator. The realisations are found to have attractive circuit performance, reliable operation at high frequencies and are suitable for IC implementation. Experimental results are included."
}
@article{LexA198367,
title = "Center for Solid-State Electronics research at Arizona State University",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "67 - 68",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80171-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801712",
author = "Lex A. and Akers"
}
@article{S198369,
title = "Microelectronics in China 1979–82 — A review",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "69 - 71",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80172-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801724",
author = "S. and McClelland"
}
@article{John198373,
title = "MOS devices - Design and manufacture",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "73 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80173-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801736",
author = "John and Butcher"
}
@article{G198373,
title = "M.J. Howes, D.V. Morgan,Editors, ,Large Scale Integration-Devices, Circuits and Systems (1981) John Wiley.",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "73 - 74",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80174-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801748",
author = "G. and Randhawa"
}
@article{John198374,
title = "The impact of microelectronics technology",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "74 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80175-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928380175X",
author = "John and Butcher"
}
@article{Milos198375,
title = "Your fortune in the microcomputer business",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "75 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80176-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801761",
author = "Milos and Krejcik"
}
@article{tagkey198377,
title = "Field-effect transistor microwave characterisation: noise figure, gain, power measurements on microwave bench: M. Binet and P. Baudet Acta Electronica 23(2) 127 (1980) (in German)",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80177-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801773",
key = "tagkey198377"
}
@article{tagkey198377,
title = "A review of two dimensional long channel MOSFET modelling: Umesh Kumar Microelectron. Reliab. 20, 585 (1980)",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80178-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801785",
key = "tagkey198377"
}
@article{tagkey198377,
title = "Carrier mobility in laser-annealed silicon-on-sapphire films: E. W. Maby and C. P. Wu RCA Review 42, 118 (March 1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80179-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801797",
key = "tagkey198377"
}
@article{tagkey198377,
title = "Localised anodic thinning of GaAs structures: D. W. Shaw and R. E. Williams Solid-St. Electron. 24 281 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80180-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801803",
key = "tagkey198377"
}
@article{tagkey198377,
title = "Average conductivity of complementary-error and Gaussian doped layers in Gallium arsenide: Li-Mo Wang Solid-St. Electron. 24, 665 (1981)",
journal = "Microelectronics Journal",
volume = "14",
number = "1",
pages = "77 - ",
year = "1983",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(83)80181-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269283801815",
key = "tagkey198377"
}
@article{John19823,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "3 - 4",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80129-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801298",
author = "John and Butcher"
}
@article{Rem19825,
title = "A notation for designing restoring logic circuitry in CMOS",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "5 - 10",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80130-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801304",
author = "Martin Rem and Carver Mead",
abstract = "A program notation is introduced together with a technique for translating programs in that notation into transistor diagrams for CMOS integrated circuits. A number of restrictions are imposed on the programs ensuring every circuit thus obtained to be restoring. The program notation caters to hierarchical design. It is shown how the observance of the restrictions can be checked for each level of the hierarchy separately. The techniques discussed in this paper may be viewed as a modest step towards silicon compilation."
}
@article{Kadir198211,
title = "Optimal performance of HMOS VLSI circuits",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "11 - 14",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80131-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801316",
author = "H. Al Abdul Kadir and J.M. Brice and J. Borel",
abstract = "A simple procedure is presented to minimise the figure of merit (Pw × τp) of digital VLSI circuits fabricated in new high performance technologies. The experimental and theoretical work on MOS static RAM shows that this minimisation is possible by proper choice of the supply voltage and of the bulk bias voltage."
}
@article{Harvey198215,
title = "Creating the integrated engineering design office",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "15 - 17",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80132-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801328",
author = "Harvey and Jones",
abstract = "In the design of VLSI devices, there is a proliferation of computer aids. The problem is that interfaces between them are largely non-existent. The Daisy Logician is an attempt to provide a unified data base in an intelligent workstation which can access software at various locations and to integrate the analysis and simulation stages in the design process."
}
@article{Institutd'ElectroniqueFondamentale198218,
title = "Can velocity overshoot or ballistic transport be efficient in submicron devices?",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "18 - 22",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80133-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280133X",
author = "Institut d'Electronique Fondamentale",
abstract = "Increasing electronic device speed implies the reduction of control region length. Velocity overshoot and quasi-ballistic transport are present in submicron structures, and some considerations about the advantage which can be taken from these effects are discussed."
}
@article{Golja198223,
title = "Implant gettering and ion beam detection of generation impurities in silicon",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "23 - 28",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80134-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801341",
author = "B. Golja and A.G. Nassibian",
abstract = "This paper provides an overview of proton-induced x-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS) pointing to their viability as complementary techniques for the detection and study of generation impurities in silicon used for VLSI circuit fabrication. In the present work these techniques were used to investigate argon ion implant damage gettering on control and gold diffused silicon wafers."
}
@article{Yi198229,
title = "A CMOS process for VLSI instrumentation",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "29 - 32",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80135-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801353",
author = "Tong Qin Yi and J.M. Robertson",
abstract = "An N-well CMOS process has been developed which can be combined with NMOS to provide a wider design choice for instrumentation applications which require both analogue and digital circuits. This paper outlines the CMOS process and shows how it can be used to implement analogue circuits and small geometry structures."
}
@article{Stevenson198233,
title = "The performance of DSW machines for VLSI research",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "33 - 37",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80136-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801365",
author = "J.T.M. Stevenson and J.M. Robertson",
abstract = "The lithography options for VLSI are briefly reviewed. The factors affecting the DSW option chosen by a university research group are compared with the criteria set by typical industrial users. Some experimental results from stepper evaluations are presented with particular consideration given to die-by-die alignment performance."
}
@article{Milos198238,
title = "Brendan Davis, ,The Economics of Automatic Testing (1982) McGraw-Hill Book Company (U.K.) Ltd.,New York.",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "38 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80137-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801377",
author = "Milos and Krejcik"
}
@article{DJ198238,
title = "546pp M.S. Ghausi, K.R. Laker, ,Modern Filter Design, Active RC and Switched Capacitor (1981) Prentice Hall,London.",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "38 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80138-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801389",
author = "D.J. and Daruvala"
}
@article{tagkey198239,
title = "Rapid determination of concentration and mobility profiles on thin GaAs layers: M. Binet Acta Electron. 23(1) 53 (1980) (in French)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80139-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801390",
key = "tagkey198239"
}
@article{tagkey198239,
title = "3-d MOSFETs shrink statie RAM cells and analog circuit blocks: John G. Posa Electronics 39 (5 May 1981)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80140-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801407",
key = "tagkey198239"
}
@article{tagkey198239,
title = "CMOS a-d converter interfaces easily with many microprocessors: Thomas M. Frederiksen Electronics 150 (24 March 1981)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80141-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801419",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Evaluation of CMOS transistor related design rules: Alfred C. Ipri RCA Rev. 41, 537 (December 1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80142-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801420",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Survey of the international state of special LSI circuits for the PCM technique: U. Manicke Nach. Elektron. 3, 92, (1981) (in German)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80143-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801432",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Is epitaxy right for MOS?: John G. Posa Electronics 93 (10 February 1981)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80144-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801444",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Fast on-chip memory extends 16-bit family's reach: David S. Laffitte and Karl M. Guttag Electronics 157 (24 February 1981)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80145-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801456",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Control chip and driver program unlock magnetic-bubble potential: Ravi Luthra and George Reyling, Jr. Electronics 138 (10 February 1981)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "39 - 40",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80146-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801468",
key = "tagkey198239"
}
@article{tagkey198240,
title = "Effect of device reliability on memory reliability: Jonathan A. Humphry IEEE Trans. Reliab. R-29(5) 416 (December 1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "40 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80147-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280147X",
key = "tagkey198240"
}
@article{tagkey198240,
title = "Maximising a 64-K RAMs operating margins: John Y. Chan, David A. Maxwell, John E. Muschinske and John J. Barnes Electronics 197 (21 April 1981)",
journal = "Microelectronics Journal",
volume = "13",
number = "6",
pages = "40 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80148-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801481",
key = "tagkey198240"
}
@article{John19823,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "3 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80107-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801079",
author = "John and Butcher"
}
@article{Joshi19824,
title = "The properties of thick-film resistors on dielectrics",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "4 - 11",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80108-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801080",
author = "B. Joshi and K.E.G. Pitt and A.E. Winster"
}
@article{P198212,
title = "Thermal characteristics of a hybrid microcircuit",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "12 - 15",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80109-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801092",
author = "P. and Gregory"
}
@article{RP198216,
title = "Particle size analysis techniques for metal powders and frits used in thick-film pastes",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "16 - 24",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80110-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801109",
author = "R.P. and Anjard Sr",
abstract = "The manufacture of quality thick-film pastes is contingent on understanding and controlling the properties of the ingredients. Key basic ingredients include both metal powders and “glasses” as well as organic systems. As with microelectronics in general, controlling the process and properties is contingent on the development of meaningful tests. To assure metal powder quality, both chemical and physical properties are specified. Typically among the latter are Scott and Tap Density, surface area, as well as physical dimensions and morphology. The most commonly indicated particle size test is the Fisher Sub-Sieve Sizer. Unfortunately the Fisher Sub-Sieve data is often considered worthless but is used “more in a historical note.” Thus a key way of assuring quality powder is to use a particle size analyser which presents meaningful data. This report deals with the sophisticated measurement techniques available and the variables involved."
}
@article{James198225,
title = "A composite CW laser module",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "25 - 28",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80111-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801110",
author = "D.F. James and R. Maude"
}
@article{Brian198229,
title = "Diffusion in semiconductors",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "29 - 34",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80112-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801122",
author = "Brian and Tuck",
abstract = "An attempt is made to give a simple account of the way in which doping atoms diffuse in semiconductors, taking as examples some of the experimental results which have been produced at Nottingham over the last decade. A brief description of the relevant properties of semiconductors is given, taking into account both elements and compounds. The paper then considers some of the complications which can arise when electrons, holes and various point defects all contribute to the diffusion process. The significance of the phase diagram is emphasised, especially when diffusion is taking place in a compound semiconductor."
}
@article{FF198235,
title = "Modified pnp transistors for high voltage integrated circuits",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "35 - 42",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80113-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801134",
author = "F.F. and Villa",
abstract = "A design and processing technique allowing fabrication of devices with higher fT without breakdown degradation is presented. It has been shown that an improvement by two to three times can be obtained using an implanted self-aligned n-well, on the emitter side. For a very high voltage planar process, an additional ion implanted step is performed in order to reduce the channel width and avoid breakdown voltage degradation. In this manner a control of the depletion region charge in the base-collector termination is obtained. A comparison with the field plate technique is made. An experimental and theoretical analysis for this modified PNP transistor structure is performed and the results compared with those of De Massa et al., showing a noticeable discrepancy in the dependence of fT and current gain upon channel width."
}
@article{tagkey198243,
title = "An alternative way of making bumps for tape automated bonding: K. Kopejtko and J. Vilim Electrocomp. Sci. Technol. 6, 185 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80114-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801146",
key = "tagkey198243"
}
@article{tagkey198243,
title = "GaAs LSI chips aim at supplanting fastest silicon ICs: J. G. Posa Electronics p.39 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80115-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801158",
key = "tagkey198243"
}
@article{tagkey198243,
title = "CAD pits semicustom chips against standard slices: J. H. Kroeger and O. N. Tozun Electronics p.119 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80116-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280116X",
key = "tagkey198243"
}
@article{tagkey198243,
title = "Effects of refiring processes on electrical and structural properties of thick-film resistors: A. Cattaneo and M. Prudenziati Electrocomp. Sci. Technol. 6, 165 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80117-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801171",
key = "tagkey198243"
}
@article{tagkey198243,
title = "Laser annealing of AINC implanted GaAs: S. S. Kular and B. J. Sealy Solid-St. Electron. 23, 875 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80118-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801183",
key = "tagkey198243"
}
@article{tagkey198243,
title = "Planar plasma etching of polycrystalline silicon: J. Hayes and T. Pandhumsoporn Solid-St. Technol. p.71 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80119-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801195",
key = "tagkey198243"
}
@article{tagkey198243,
title = "Comparison of Thai's theory with experimental boron doping profiles in silicon, diffused from boron nitride sources: K. P. Frohmader and L. Baumbauer Solid-St. Electron. 23, 1263 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "43 - 44",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80120-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801201",
key = "tagkey198243"
}
@article{tagkey198244,
title = "A molybdenum source, gate and drain metallisation system for GaAs MESFET layers grown by molecular beam epitaxy: W. J. Devlin, C. E. C. Wood, R. Stall and L. F. Eastman Solid-St. Electron. 23 823 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80121-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801213",
key = "tagkey198244"
}
@article{tagkey198244,
title = "Ion-implanted p-resistor reliability: P. K. Chaudhari, G. R. Nelson and A. Nagarajan IEEE Trans. Components, Hybrids Mfng Technol. Chmt-3(2) 258 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80122-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801225",
key = "tagkey198244"
}
@article{tagkey198244,
title = "Reduction of leakage by implantation gettering in VLSI circuits: H. J. Geipel and W. K. Tice IBM J. Res. Devel. 24(3) 310 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80123-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801237",
key = "tagkey198244"
}
@article{tagkey198244,
title = "Fabrications of thick film circuits on cofired ceramic substrates: R. L. Schelhorn Solid-St. Technol. p.130 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80124-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801249",
key = "tagkey198244"
}
@article{tagkey198244,
title = "The use of the laser for the inspection of printed circuit boards and laminates: J. Bedford Circuit Wld. 7(1) 65 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80125-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801250",
key = "tagkey198244"
}
@article{tagkey198244,
title = "Laser projection printing: M. Lacombat, J. Massin, G. M. Dubroeucq and M. Brevignon Solid-St. Technol. p. 115 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "5",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80126-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801262",
key = "tagkey198244"
}
@article{John19823,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "3 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80001-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800013",
author = "John and Butcher"
}
@article{Beneking19825,
title = "Medium-power GaAs bipolar transistors",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "5 - 14",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80002-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800025",
author = "H. Beneking and L.M. Su and F. Ponse",
abstract = "GaAs has an advantage over Si and Ge in some material parameters for bipolar transistor application. Another benefit is the availability of the wide gap emitter principle for GaAIAs/GaAs heterojunction transistors. Such bipolar transistors have been fabricated and tested. Maximum frequency of oscillation fMAG = 2.2 GHz and cut-off frequency fT = 2.7 GHz demonstrate the high-frequency suitability, whereas emitter-collector breakdown voltages VCEO100 V and maximum collector currents IC max ∼ 300 mA are an indicator of high-power applications. The transistor operates at temperatures in the range of − 269°C to + 350°C. A double heterostructure NpN transistor shows the elimination of the turn-on voltage of ∼ 0.2 V for Npn wide gap emitter Ga0.7Al0.3As/GaAs transistors in common emitter configuration. The NpN transistor can be operated in bi-direction with comparable current gain due to the wide gap emitter principle and the symmetry of the emitter-base and collector-base heterojunctions. Compared with the Npn GaAs transistor, the storage time ts of the NpN GaAs transistor is reduced by a factor of about 2."
}
@article{Pierre198215,
title = "20 GHz low noise beam lead GaAs FET",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "15 - 18",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80003-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800037",
author = "Pierre and Baudet",
abstract = "A beam-lead recessed gate GaAs MESFET structure with 0.8 μm gate length has been designed and fabricated. Gain in excess of 8.2 dB and noise figures as low as 3.3 dB at 20 GHz have been measured thus demonstrating the potential of beam lead FETs for high frequency operation."
}
@article{K198219,
title = "A review of bulk unipolar diodes and their applications",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "19 - 22",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80004-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800049",
author = "K. and Board",
abstract = "A number of new rectifying structures in GaAs have been reported recently, which are formed within the bulk of the semiconductor, either by controlling the impurity density by means of ion implantation or molecular beam epitaxy, or by controlling the composition of a ternary compound which exhibits an electron affinity which is composition-dependent. In this paper the various types of such bulk unipolar diodes are reviewed.
A number of applications of these barriers are also reviewed, including two novel majority-carrier transistors which are likely to have extremely fast response times, a majority-carrier photo-detector with gain, and a two-state regenerative switching device."
}
@article{Ranfft198223,
title = "A simple optimisation procedure for bipolar subnanosecond ICs with low power dissipation",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "23 - 28",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80005-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800050",
author = "R. Ranfft and H.-M. Rein",
abstract = "A simple, fast converging optimisation procedure for non-saturated digital ICs is described. It yields the minimum gate delay for a given power dissipation by varying easily controllable structural and technological parameters; that is to say, the parameters of the circuit components (transistors and Schottky diodes) are adapted to the power dissipation. Simulation results show that the power consumption of bipolar subnanosecond circuits can be reduced to surprisingly low values, without substantial loss of speed, by utilising this optimisation routine. The basic gates of high-speed circuit techniques are compared with respect to the maximum obtainable switching speed."
}
@article{RL198229,
title = "Fabrication process techniques for switched-capacitor filter circuits",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "29 - 36",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80006-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800062",
author = "R.L. and Maddox",
abstract = "Several different capacitor structures that are integratable to a production NMOS or N well CMOS process are described and discussed. The methods of fabrication for each major category of capacitor structure are presented along with some additional variations to each type of structure which will improve the quality of that capacitor structure. The pros and cons of each major type of structure are discussed with respect to device performance and ease of integration into the process. The properties of the capacitor dielectrics are discussed and data presented for oxide growth on polysilicon, breakdown voltage, leakage, and dissipation factor. The information presented is useful in providing a rational basis for switched capacitor filter design."
}
@article{Roubik198237,
title = "An offset-free switched-capacitor biquad",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "37 - 40",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80007-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800074",
author = "Roubik and Gregorian",
abstract = "A switched-capacitor building block is described where the output voltage is free from the offset of the operational amplifier. The circuit is used to realise an offset-free parasitic insensitive biquad. Notch, high-pass and band-pass realisations are separately described."
}
@article{tagkey198241,
title = "Thick-film base-metal conductors on beryllia: H. R. Povolny Electron. Prod. p 31 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "41 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80008-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800086",
key = "tagkey198241"
}
@article{tagkey198241,
title = "Contamination control in lead bonding to thick and thin films: J. A. Wagner and J. L. Jellison IEEE Trans. Components, Hybrids Mfng Technol. Chmt-3(2) 281 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "41 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80009-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800098",
key = "tagkey198241"
}
@article{tagkey198241,
title = "Absorption effects on ESR and conductance of RF sputtered a-Si films: M. Suzuki, T. Maekawa, A. Nakao, M. Kumeda and T. Shimizu Solid St. Commun. 36, 393 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "41 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80010-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800104",
key = "tagkey198241"
}
@article{tagkey198241,
title = "New light-sensitive positive-working thick resist materials for various electronic applications: H. Ruckert Electrocomp. Sci. Technol. 6, 223 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "41 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80011-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800116",
key = "tagkey198241"
}
@article{tagkey198242,
title = "Comparison of enamelled steel substrate properties for thick film use: S. J. Stein, C. Huang and S. A. Gelb Electrocomp. Sci. Technol. 7, 55 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80012-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800128",
key = "tagkey198242"
}
@article{tagkey198242,
title = "Quality assurance of electrical distribution products: M. Coulter Electron. Power p.802 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80013-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280013X",
key = "tagkey198242"
}
@article{tagkey198242,
title = "Overlay in lithography: H. R. Rottmann IBM J. Res. Devel. 24(4), 461 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80014-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800141",
key = "tagkey198242"
}
@article{tagkey198242,
title = "I/C packaging and interconnection developments: M. G. Sage Circuit Wld. 7(1), 59 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80015-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800153",
key = "tagkey198242"
}
@article{tagkey198242,
title = "Influence of manufacturing process on ultrasonic bondability of thick film gold conductors: P. Collander, T. Laurinolli, E. Jarvinen and M. Weissenfelt Solid-St. Technol. p.85 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80016-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800165",
key = "tagkey198242"
}
@article{tagkey198242,
title = "A new production technique: Ion milling: D. Bollinger and R. Fink Solid-St. Technol. p.79 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80017-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800177",
key = "tagkey198242"
}
@article{tagkey198242,
title = "Reticles for wafer imaging systems: T. Goeders Solid-St. Technol. p.91 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80018-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800189",
key = "tagkey198242"
}
@article{tagkey198242,
title = "Step-and-repeat wafer imaging: S. Wittekoek Solid-St. Technol. p.80 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80019-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800190",
key = "tagkey198242"
}
@article{tagkey198242,
title = "Simultaneous contacting — modern assembly methods of microelectronics: P. Bartsch and B. Lauterwald Nachrichtentech. Elektron. 30(7), 292 (1980). (In German.)",
journal = "Microelectronics Journal",
volume = "13",
number = "4",
pages = "42 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80020-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800207",
key = "tagkey198242"
}
@article{John19823,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "3 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80180-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801808",
author = "John and Butcher"
}
@article{Ploog19825,
title = "Growth and properties of new artificial doping superlattices in GaAs",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "5 - 22",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80181-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280181X",
author = "K. Ploog and H. Künzel",
abstract = "We present a new type of an artificial periodic semiconductor structure with tunable carrier concentrations and tunable energy gap which has been prepared by molecular beam epitaxy (MBE). The structure consists of a periodic sequence of thin (50 < d < 3000 ) n(Si)- and p(Be)-doped GaAs layers separated possibly by thin intrinsic (i-) layers called a “NIPI” structure. The space charge field of the ionised impurities varying in the direction of layer sequence produces a periodic ‘parallel’ modulation of the energy bands which determines the unusual electrical and optical properties of the material. The 1-dimensional periodic potential induces a splitting of the conduction and valence bands into sub-bands similar to those in the well-known compositional superlattices. In contrast to the GaAs/AlxGa1−xAs superlattice, however, GaAs doping superlattices exhibit an ‘indirect energy gap in real space’, with the electron and hole states spatially separated by half a period. Deviations from thermal equilibrium are thus quasi-stable, and excess-carrier lifetimes become very large. In this new class of semiconductor materials we demonstrate the tunability of conductivity, absorption coefficient, and luminescence by external voltage and by optical excitation."
}
@article{Goltzené198223,
title = "Some physico-chemical aspects of semi-insulating gallium arsenide",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "23 - 28",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80182-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801821",
author = "A. Goltzené and C. Schwab",
abstract = "Some basic aspects of the defect chemistry of semi-insulating GaAs, particularly those linked to point defects, both intrinsic and extrinsic, are reviewed with a particular emphasis on the paramagnetic resonance technique, which brings specific information on the defect structure. The progress in fundamental knowledge is associated with recent material improvements. Some remaining problems areas are surveyed."
}
@article{Nogami198229,
title = "Present state of microwave GaAs devices",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "29 - 43",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80183-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801833",
author = "M. Nogami and Y. Hirachi and K. Ohta",
abstract = "Discrete GaAs devices, both power and low-noise, have demonstrated the superiority of GaAs technology, and have now become the most important devices over the frequency range between the UHF-band and Ku-band. GaAs ICs, which have already been fabricated on a LSI scale, are becoming a reality. This paper reviews some of the developments being undertaken on discrete GaAs devices and GaAs ICs."
}
@article{tagkey198244,
title = "Introduction to Computers: Hans Steinbock Heyden & Son Translated by H. Bibring, Middlesex, Polytechnic 80pp $3.00",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80184-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801845",
key = "tagkey198244"
}
@article{tagkey198244,
title = "Computer Design Aids for VLSI Circuits (NATO Advanced Study Institutes Series): Antognetti, D.O. Pederson and H. Sijthoff & Noordhoff, 1981 551pp (HB) $60",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80185-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801857",
key = "tagkey198244"
}
@article{tagkey198244,
title = "Microcomputing, Everything You Need To Know: Rose Deakin Sphere Books Ltd, 1982 172pp",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80186-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801869",
key = "tagkey198244"
}
@article{Milos198244,
title = "Understanding Microprocessors",
journal = "Microelectronics Journal",
volume = "13",
number = "3",
pages = "44 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80187-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801870",
author = "Milos and Krejcik"
}
@article{John19823,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "3 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80188-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801882",
author = "John and Butcher"
}
@article{Leif19825,
title = "Integrated injection logic—a review of its status and prospects",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "5 - 11",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80189-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801894",
author = "Leif and Halbo",
abstract = "In this paper the performance of Integrated Injection Logic (I2L) is reviewed, and its potential for on-chip combinations with other bipolar logic as well as analog circuitry and integrated sensors is discussed. Examples are given which demonstrate the wide variety of applications of I2L. New logic devices, based on the I2L concept are mentioned. An attempt is made to assess the role of I2L in the coming years.†Central Institute for Industrial Research, Blindern, Oslo 3, Norway"
}
@article{AlanB198212,
title = "Combined analog/digital LSI design using I2L gate arrays",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "12 - 19",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80190-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801900",
author = "Alan B. and Grebene",
abstract = "In the design of complex LSI systems, the Integrated Injection Logic (I2L) technology offers a unique advantage over MOS technologies: it can combine high-density logic arrays on the same monolithic chip with precision analog circuitry. Thus, it is ideally suited for designing LSI systems requiring both analog and digital circuitry on the same chip. This paper describes the features and the capabilities of an I2L semi-custom IC chip particularly designed for combined analog/digital LSI designs. The semi-custom IC, designated as the XR-400 Master-Chip, contains an array of 256 five-output I2L gates, along with a wide choice of linear bipolar components on the same monolithic chip.†Exar Integrated Systems Inc, Sunnyvale, Cal, USA"
}
@article{Khan198220,
title = "Realisation of a sinusoidal oscillator with operational amplifiers and capacitors",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "20 - 21",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80191-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801912",
author = "I.A. Khan and M.T. Ahmed",
abstract = "A simple sinusoidal oscillator is presented which uses only two operational amplifiers and four capacitors. The circuit has reliable high frequency performance. It is very attractive for IC implementation in MOS form. Experimental results are included.†Department of Electrical Engineering, A. M. University, Aligarh-202001, India"
}
@article{Hart198222,
title = "Tolerance effects in submicroampere current generator design",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "22 - 24",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80192-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801924",
author = "B.L. Hart and R.W.J. Barker",
abstract = "It is shown that recently proposed monolithic low current generators employing the principle of ‘power-law current division’ require some form of on-chip trimming if a close definition of output current is required."
}
@article{BrankoL198225,
title = "Influence of series and parallel transistors on DC characteristics of CMOS logic circuits",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "25 - 30",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80193-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801936",
author = "Branko L. and Dokic",
abstract = "It is shown by DC analysis that NAND and NOR CMOS logic circuits can be replaced by equivalent CMOS inverters. The threshold voltage depends on the number and position of active inputs. It is further shown that the optimum geometry ratio of PMOS and NMOS transistors depends also on the number of inputs.†University of Banjaluka, Yugoslavia"
}
@article{DA198231,
title = "Photo-coupled logic - a hopeful prospect",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "31 - 34",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80194-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801948",
author = "D.A. and Fraser",
abstract = "The possibility of using optical fibres instead of electrical conductors to carry signals between VLSI devices is considered in terms of the materials, devices and circuits required, and is found to be feasible. Potential advantages for VLSI components lie primarily in the opportunity to exchange more data between components, due to the reduced area per connection, but there is also reason to suggest greater reliability."
}
@article{PeterA198235,
title = "348pp (HB) $124 Nishizawa J., ,Japan Annual Reviews in Electronics, Computers and Telecommunications Semiconductor Technologies (1982) Ohmsha Ltd and North Holland Publishing Co.",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "35 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80195-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280195X",
author = "Peter A. and Walker"
}
@article{M198235,
title = "462pp Till William C., James T. Luxon, ,Integrated Circuits: Materials, Devices and Fabrication (1982) Prentice-Hall.",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "35 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80196-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801961",
author = "M. and Krejcik"
}
@article{PeterA198235,
title = "s2",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "35 - 36",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80197-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801973",
author = "Peter A. and Walker"
}
@article{M198236,
title = "330pp £20 C.E. Jowett, M. Krejcik, ,Materials and Processes in Electronics (1982) Hutchinson & Co.",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "36 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80198-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801985",
author = "M. and Krejcik"
}
@article{tagkey198237,
title = "Microelectronics world abstracts",
journal = "Microelectronics Journal",
volume = "13",
number = "2",
pages = "37 - 44",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80199-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282801997",
key = "tagkey198237"
}
@article{tagkey19821,
title = "Editorial board",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "1 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80039-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800396",
key = "tagkey19821"
}
@article{PN19823,
title = "Guest editorial",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "3 - 4",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80040-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800402",
author = "P.N. and Robson"
}
@article{Lent19825,
title = "The growth of semi-insulating gallium arsenide by the LEC process",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "5 - 9",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80041-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800414",
author = "B. Lent and M. Bonnet and N. Visentin and J.P. Duchemin",
abstract = "A research and development programme has been launched at the Laboratoire Central de Recherche, to optimise the growth parameters for the production of high quality semi-insulating bulk gallium arsenide by the Liquid Encapsulation Czochralski (LEC) technique. Mono-crystals up to 3″ diameter, weighing up to 2.5 kg, have been grown and assessed for a range of crystal-growth parameters. A method of minimising the concentration of gallium inclusions within the bulk material is described.
Finally, we discuss an alternative method of minimising arsenic loss, namely growth under a partial pressure of arsenic, and present preliminary thoughts on the concept of a ‘hot wall’ puller."
}
@article{Bauser198210,
title = "LPE of GaAs and related compounds: substrate orientation and surface morphology",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "10 - 14",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80042-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800426",
author = "E. Bauser and K.W. Benz"
}
@article{MN198215,
title = "The use of high magnetic fields for characterisation of impurities in epitaxial GaAs",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "15 - 20",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80043-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800438",
author = "M.N. and Afsar",
abstract = "The only reliable method for identification of donor contaminants such as Si, S, Se, Sn and Ge in ultra-high purity epitaxial GaAs is the observation of the 1s → 2p transition by means of far-infrared photoconductivity in high-intensity magnetic fields. Until recently, interpretation of this simple data has been unreliable. For example, it is found that the inhomogeneous Stark broadening of the 1s → 2p (m = −1) transition of the hydrogen-like donor in VPE grown GaAs almost disappears as the magnetic field is increased to 200 kilogauss (20 tesla). Moreover, our new method of employing mbe epitaxial GaAs (p-type) slightly doped with a single type of donor now provides the solution to the problem of resolving and identifying the variety of possible substitutional donors, one at a time."
}
@article{BJ198221,
title = "Transient annealing of ion implanted GaAs",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "21 - 28",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80044-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280044X",
author = "B.J. and Sealy",
abstract = "A brief resumé of the achievements of conventional furnace annealing will be presented followed by a more detailed state-of-the-art discussion of thermal pulse annealing and laser annealing"
}
@article{AW198229,
title = "GaAs for high-speed digital circuits",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "29 - 33",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80045-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800451",
author = "A.W. and Livingstone",
abstract = "Medium and large scale digital integrated circuits have been demonstrated on GaAs, operating at speeds up to 5 GHz. To transfer that circuit capability into a high yield production environment requires a reliable fabrication technology as well as the means to gather statistical information about the process, to enable it to be monitored meaningfully and circuit simulation models to be maintained."
}
@article{Badics198234,
title = "On properties of the relaxation semiconductors GaAs: O and GaAs: Cr-a short overview",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "34 - 38",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80046-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800463",
author = "G. Badics and Z. Szalmassy",
abstract = "In this paper some peculiar properties of GaAs:O and GaAs:Cr are discussed. Thin film contacts made of various metals such as Zn, Ag, Cu and Sn were used for measurements on two and three contact systems. A correlation was obtained between the conductivity for small voltages and the impurity levels of the contact materials. Voltage controlled transconductance and current oscillations will be reported."
}
@article{tagkey198239,
title = "Quasistatic and nonequilibrium phenomena in MOS structures under the influence of a constant gate-current bias: P. G. C. Allman and J. G. Simmons IEE Proc. 127(6), 312 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80047-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800475",
key = "tagkey198239"
}
@article{tagkey198239,
title = "VLSI device phenomena in dynamic memory and their application to technology development and device design: R. R. Troutman IBM J. Res. Devel. 24(3), 299 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80048-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800487",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Microcomputer draws only 3μA: J. G. Posa Electronics p.143 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80049-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800499",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Measurement science is catching up: R. W. Comerford Electronics p.86 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80050-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800505",
key = "tagkey198239"
}
@article{tagkey198239,
title = "A programmable pseudo-random noise generator: G. Greenshield and J. R. Jordan Microelectron. J. 11(6) 25 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80051-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800517",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Lowered I-F shrinks FM radio onto one chip: J. Gosch Electronics p.77 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80052-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800529",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Achieving stability in IC oscillators: I. Refioglu Electronics p.124 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80053-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800530",
key = "tagkey198239"
}
@article{tagkey198239,
title = "C-MOS read-only memory mates with a host of processors: B. Donoghue Electronics p.127 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80054-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800542",
key = "tagkey198239"
}
@article{tagkey198239,
title = "Low-power EE-PROM can be programmed fast: E. K. Shelton Electronics p.89 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "39 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80055-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800554",
key = "tagkey198239"
}
@article{tagkey198240,
title = "A silicon and aluminium dynamic memory technology: R. A. Larsen IBM J. Res. Devel. 24(3) 268 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "40 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80056-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800566",
key = "tagkey198240"
}
@article{tagkey198240,
title = "64-K static RAM surrounds n-MOS cells with C-MOS circuits: T. Ohzone Electronics p.145 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "40 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80057-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269282800578",
key = "tagkey198240"
}
@article{tagkey198240,
title = "Peripheral controller chip ties into 8- and 16-bit systems: J. Banning and P. Lin Electronics p.143 (1980)",
journal = "Microelectronics Journal",
volume = "13",
number = "1",
pages = "40 - ",
year = "1982",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(82)80058-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928280058X",
key = "tagkey198240"
}
@article{John19813,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "3 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80357-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803576",
author = "John and Butcher"
}
@article{Yoshio19815,
title = "Comparison of new technologies for VLSI: Possibilities and limitations",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "5 - 14",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80358-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803588",
author = "Yoshio and Nishi",
abstract = "Device technology and microfabrication process technology for LSI and VLSI are discussed with respect to the present status and future prospects. Comparisons between MOS and bipolar, CMOS and NMOS, SOS and bulk are the primary subjects for discussion, and the practical limitation to reduction of device geometry is also considered in conjunction with technical feasibility of process technologies such as lithography, device isolation, and novel gate and interconnection materials."
}
@article{Prasad198115,
title = "Arsenic spin-on source for deep junction formation",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "15 - 23",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80359-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180359X",
author = "P. Madhusudana Prasad and V.P. Sundarsingh",
abstract = "An arsenic spin-on source was developed by adding As2O3 to tetramethylorthosilicate (TMOS) and the diffusion of arsenic into silicon from the resulting doped film was investigated for deep junction formation. The effect of spin speed and the ambient on the diffusion properties are presented. The presence of O2 was found to be necessary to increase the junction depth and surface concentration and the diffusion coefficient of arsenic was dependent on carrier concentration. The diffusion of arsenic through thermally grown SiO2 was studied. Infrared and SEM studies were carried out to characterise the spun film."
}
@article{GianS198124,
title = "Monolithic integrated Hall devices in silicon circuits",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "24 - 29",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80360-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803606",
author = "Gian S. and Randhawa",
abstract = "Electrical characteristics of Hall plates of various configurations are considered and it is shown that an integrated Hall device using an unmodified collector layer, when coupled with a built-in differential amplifier makes an economical and compact magnetic field transducer. Its performance is very competitive with, and in some respects distinctly better than, those using III-V compounds. Multielectrode square configurations, through judicious choice of supply and Hall contacts, minimise the effect of thermoelectric and piezoelectric emfs on the offset voltage and reduce its thermal drift, quadruple the input current to 10mA under constant 6V bias, and average the Hall element sensitivity to 0.4V/Tesla for a 1Ωcm n-epi-layer 10μm thick."
}
@article{Nihal198130,
title = "An evaluation of plastic coatings for high reliability microcircuits",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "30 - 38",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80361-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803618",
author = "Nihal and Sinnadurai",
abstract = "A systematic evaluation of a range of plastic coatings, to identify those suitable for use on bare microcircuit dice for high reliability applications, has been conducted by materials analyses and by damp heat overstress of coated special test vehicles. Some promising junction coatings were first selected and then used in subsequent tests with added top coatings in order to evaluate a range of composite coatings. Over 4,000 hours of overstress have been accumulated from tests on some 500 test vehicles and over 15 different coatings examined. The materials analyses provided a coarse screen and roughly correlated with the damp heat test results, which proved to be more discriminating. While some junction coatings gave excellent results, it was very apparent that their performance could be severely impaired by the addition of poor top coatings. Nevertheless the outcome from this exercise has been the identification of a number of promising pairs of coatings, with the caution that evaluations with more sensitive active elements have yet to be done."
}
@article{HugoF198138,
title = "Silicon — the information carrier of the 80s",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "38 - 39",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80362-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180362X",
author = "Hugo F. and Wyss"
}
@article{tagkey198140,
title = "Theory of the fully depleted SOS/MOS transistor: E. R. Worley Solid-St. Electron. 23, 1107 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80363-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803631",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Frequency response of charge transfer in MOS inversion layers: U. Lieneweg Solid-St. Electron. 23, 577 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80364-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803643",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Phoneme-based speech chip needs less memory: G. Bassak Electronics p.43 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80365-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803655",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Gallium arsenide review: past, present and future: D. M. Taylor, D. O. Wilson and D. H. Phillips IEE Proc. 127, I(5) 266 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80366-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803667",
key = "tagkey198140"
}
@article{tagkey198140,
title = "A 3–5GHz self-aligned single-clocked binary frequency divider on GaAs: M. Cathelin, M. Gavant and R. Rocchi IEE Proc. 127, I(5), 270 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80367-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803679",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Macro generation algorithms for LSI custom chip design: B. Vergnieres IBM J. Res. Devel. 24(5), 612 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80368-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803680",
key = "tagkey198140"
}
@article{tagkey198141,
title = "An E-PROM's integrity starts with its cell structure: M. H. Woods Electronics p.132 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80369-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803692",
key = "tagkey198141"
}
@article{tagkey198141,
title = "Design limitations in large bipolar PROMs: R. L. Cline Microelectron. J. 11(5), 15 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80370-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803709",
key = "tagkey198141"
}
@article{tagkey198141,
title = "Reliability testing and evaluation of magnetic bubble memories for electronic switching systems: N. Yamaguchi and S. Hibi IEEE 18th Annual Proceedings, Reliability Physics 1980, Las Vegas, Nevada, p.78 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80371-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803710",
key = "tagkey198141"
}
@article{tagkey198141,
title = "4096 bit and larger bipolar static random access memories: W. H. Herndon, W. Ho and W. Ong Microelectron. J. 11(5), 12 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80372-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803722",
key = "tagkey198141"
}
@article{tagkey198141,
title = "Tough control tasks take 16 bits: J. V. Schabowski Electronics p.91 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80373-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803734",
key = "tagkey198141"
}
@article{tagkey198141,
title = "N-MOS hurls 4-bit family into 8-bit orbit: E. Toyoda, T. Sakao and K. Mayumi Electronics p.145 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80374-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803746",
key = "tagkey198141"
}
@article{tagkey198141,
title = "Theory and application of a nondestructive photovoltaic technique for the measurement of resistivity variations in circular semiconductor slices: R. D. Larrabee and D. L. Blackburn Solid-St. Electron. 23, 1059 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80375-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803758",
key = "tagkey198141"
}
@article{tagkey198141,
title = "Design of microstrip integrated optic and microwave devices: M. De Sario Alta Frequenza XLIX(4), 298 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "6",
pages = "41 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80376-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180376X",
key = "tagkey198141"
}
@article{PA19813,
title = "Guest editorial",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "3 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80153-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180153X",
author = "P.A. and Walker"
}
@article{PI19815,
title = "Review of ion-implanted bubble devices",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "5 - 7",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80154-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801541",
author = "P.I. and Bonyhard"
}
@article{Jouve19818,
title = "The contiguous disk technology for high density bubble memories",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "8 - 14",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80155-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801553",
author = "H. Jouve and J. Magnin",
abstract = "A new generation of magnetic bubble memory devices using “contiguous disk” elements as propagation patterns is under development in various laboratories. The propagation patterns are delineated by ion implantation in the top layer of the bubble garnet material. The magnetic domains are displaced by the charged walls created around the disks under the influence of an in-plane field. The shape of these contiguous elements allows a tenfold increase in storage density when compared to the conventional asymmetric permalloy chevrons. The operation of the different elementary functions necessary for a working chip is described, as well as the technological process necessary for its fabrication. The possible chip architectures are reviewed with their respective performances."
}
@article{Breed198115,
title = "High frequency magnetic bubble devices",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "15 - 18",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80156-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801565",
author = "D.J. Breed and A.G.H. Verhulst",
abstract = "In the bubble device materials in current use the maximum velocity of the bubbles is limited to about 20 m s−1 and the mobility is about 7 m s−1 Oe−1. These values are sufficiently high for field access bubble devices where the maximum frequency is about 300 kHz. In the recently developed current access devices, where higher frequencies are possible, the dynamic properties of the bubble films can limit the maximum frequency. Therefore, bubble films with high maximum velocity and high mobility have been developed, which allow for much higher frequencies. It has been shown that with a current access circuit frequencies of at least 12.5 MHz are possible in these films."
}
@article{Kawasaki198119,
title = "Magnetic bubble propagation for the dual conductor current-access test circuit",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "19 - 22",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80157-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801577",
author = "T. Kawasaki and T. Tsuruoka and H. Akiyama and K. Kawamura and T. Miyashita",
abstract = "In this paper, the design and propagation results for the dual conductor current-access test circuit are presented. Bias margins as large as 10 Oe were obtained at 500 KHz for the straight line propagation circuit (propagation normal to the drive currents), the structure period being 12 μm. At 900 kHz also, propagation was observed. A (Y, Sm, Lu, Ca)3 (Fe, Ge)5 O12 garnet film was used and the bubble diameter of this material was 3.3 μm."
}
@article{T198123,
title = "Preparation and some magnetic properties of amorphous rare earth-transition metal films with perpendicular anisotropy for bubble memory",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "23 - 29",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80158-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801589",
author = "T. and Katayama",
abstract = "A preparation method for amorphous R-T films for magnetic bubbles is described. Positive Ku is induced by a resputtering effect in amorphous Gd-Co and Gd-Co-Mo films. However, sputtering without resputtering effect and evaporation produce positive Ku in amorphous R-T films such as Gd-Fe, Dy-Fe and so on. Some magnetic properties of amorphous R-T films are also described. The addition of Mo improves the chemical and thermal stabilities of films and it reduces a positive Ku and Tc. Annealing reduces positive Ku, but enhances 4TMs, Tc and exchange stiffness constant A."
}
@article{Okada198130,
title = "Some considerations for peripheral circuits for bubble memory",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "30 - 36",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80159-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801590",
author = "M. Okada and Y. Yamaguchi and K. Tsuchiya",
abstract = "In this paper, the coil drive circuit and sense circuit which are especially important peripheral circuits of bubble memories, are studied and discussed. Several circuit methods are compared, identifying advantages and disadvantages. As an example of design, a circuit method suitable for a memory device driven by a 200 kHz clock is discussed. The coil drive circuit adopts the series resonance method and is designed to achieve economically low power consumption and especially drive current stability by driving bubble devices with series connected coils. The sense circuit is a multi-amplifier type with efficient low pass filters. Successful operation of these circuits was verified by performance tests on a memory. Finally, higher speed drive circuits for the future are surveyed."
}
@article{RB198137,
title = "477pp £15.95 R.E.H. Bywater, ,Hardware/Software Design of Digital Systems (1981) Prentice-Hall,New York.",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80160-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801607",
author = "R.B. and Matthews"
}
@article{KW198137,
title = "£10.50 K.E.G. Pitt, ,An Introduction to Thick Film Component Technology (1981) Mackintosh Publications Limited.",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80161-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801619",
author = "K.W. and Woodcock"
}
@article{MRE198137,
title = "Electronic Design with Off-the-Shelf Integrated Circuits Z. H. Meiksin and Philip C. Thackray Parker Publishing Co. Inc., N.Y.",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80162-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801620",
author = "M.R.E. and Bloyce"
}
@article{tagkey198138,
title = "A high-speed multiplier using subnanosecond bipolar VLSI technologies: T. Takahashi, S. Wakamatsu and K. Kimura Fifth Solid State Circuits Conference—ESSCIRC 79, IEE Publn. 178, 110",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "38 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80163-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801632",
key = "tagkey198138"
}
@article{tagkey198138,
title = "A new ultra low power ULA and its application: P. Forshaw Microelectron. Reliab. 19, 463 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "38 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80164-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801644",
key = "tagkey198138"
}
@article{tagkey198138,
title = "Universal logic gates for custom-design IC requirements: S. L. Hurst Microelectron. Reliab. 19, 457 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "38 - 39",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80165-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801656",
key = "tagkey198138"
}
@article{tagkey198139,
title = "A 500-picosecond system design capability: S. Hollock Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 79",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80166-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801668",
key = "tagkey198139"
}
@article{tagkey198139,
title = "A GaAs MESFET sample and hold switch: P. H. Saul Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 5",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80167-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180167X",
key = "tagkey198139"
}
@article{tagkey198139,
title = "A survey of corrosion failure mechanisms in microelectronic devices: G. L. Schnable, R. B. Comizzoli, W. Kern and L. K. White RCA Review, 40, 416 (December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80168-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801681",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Extension of high-temperature electronics: B. L. Draper and D. W. Palmer IEEE Trans. Components, Hybrids Mfg Technology. CHMT-2 (4), 399 (December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80169-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801693",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Observation of valley splitting in (111)n-type silicon inversion layers: T. Englert, D. C. Tsui and G. Landweher Solid St. Commun. 33, 1167 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80170-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180170X",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Reliable Multiwire circuits with small gauge wires: J. I. Etsu Hybrids Mfg Technology. CHMT-2(4), 532 (December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80171-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801711",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Semi-empirical APW calculation of the band structure of silicon: D. A. Papaconstantopoulos and B. M. Klein Solid St. Commun. 34, 511 (1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "5",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80172-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281801723",
key = "tagkey198139"
}
@article{John19813,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "3 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80256-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180256X",
author = "John and Butcher"
}
@article{Swart19815,
title = "Gate-voltage limitations for thin channel MIS and schottky buried-channel charge-coupled devices",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "5 - 10",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80257-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802571",
author = "P.L. Swart and C.K. Campbell",
abstract = "A one dimensional analysis of Poisson's equation is carried out for the metal-oxide-semiconductor buried-channel charge-coupled device (MOSBCCD) and the Schottky-barrier version (SBCCD). This yields a simple design procedure for uniformly doped thin channel devices. The safe design boundaries are fixed by avalanche breakdown and charge containment in the bulk channel. These boundaries are unique functions of the channel parameters and become more critical for highly doped thin-channel devices."
}
@article{JDE198111,
title = "A review of self-scanned image sensors",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "11 - 17",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80258-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802583",
author = "J.D.E. and Beynon"
}
@article{Martin198118,
title = "An integrated LSI design aids system",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "18 - 22",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80259-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802595",
author = "G. Martin and J. Berrie and T. Little and D. Mackay and J. McVean and D. Tomsett and L. Weston",
abstract = "The increasing complexity and density of integrated circuits has created a bottleneck in their design; at the same time, competitive pressures in the computer industry have produced a requirement for the replacement of TTL-based logic by LSI. A solution to this repackaging problem has been developed, consisting of an integrated LSI design aids system, based on a polycell approach."
}
@article{Coleman198123,
title = "Silver migration in thick film conductors and chip attachment resins",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "23 - 29",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80260-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802601",
author = "M.V. Coleman and A.E. Winster",
abstract = "The rates of silver migration of silver alloy thick film conductors and silver-loaded resins have been examined under conditions of 98% relative humidity at 25°C and 85% relative humidity at 85°C, and various d.c. power loadings. The value of a current limiting resistor in series with the sample under test was shown to have a considerable effect on migration. The presence of debris in the gap between conductor tracks and on the substrate surface was shown to increase the rates of migration. The nature and composition of the substrate surface also affected the migration of conductors printed and fired under identical conditions. Overglazes over conductors and cross-over dielectrics between conductors slowed moisture penetration to the conductor surfaces but did not prevent dendritric growth from occurring. Migration always occurred from the cathode to the anode but it was necessary for silver ions to move from the anode to the cathode to provide the dendrite source material. It was concluded that care was necessary in interpreting data from silver migration tests but all silver loaded materials will migrate in the presence of moisture, and the only sure solution would be improved encapsulation or dry atmosphere sealing."
}
@article{RR198130,
title = "Electronics — Strategies for failure",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "30 - 32",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80261-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802613",
author = "R.R. and Heikes"
}
@article{IM198133,
title = "An overview of the electronics industry in Europe",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "33 - 38",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80262-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802625",
author = "I.M. and Mackintosh"
}
@article{tagkey198139,
title = "VLSI/LSI circuit functions: their challenges, rewards and problems: J. J. Digiacomo IEEE Trans. Components, Hybrids Mfg Technol. Chmt-3(1), 94 (March 1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80263-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802637",
key = "tagkey198139"
}
@article{tagkey198139,
title = "VLSI with a vengeance: L. W. Sumney IEEE Spectrum. 24 (April 1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80264-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802649",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Programmable components: the shape of VLSI to come: J. L. Fischer Electronics. 138 (June 1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80265-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802650",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Research and development of IC technology in Japan: T. Sugano Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 139",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80266-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802662",
key = "tagkey198139"
}
@article{tagkey198140,
title = "IBM multichip multilayer ceramic modules for LSI chips — design for performance and density: B. T. Clark and Y. M. Hill IEEE Trans. Components, Hybrids Mfg Technology. Chmt-3(1), 89 (March 1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80267-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802674",
key = "tagkey198140"
}
@article{tagkey198140,
title = "A ULA is more than silicon: J. A. Vernon, N. R. Crocker and J. P. Singleton Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 51",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80268-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802686",
key = "tagkey198140"
}
@article{tagkey198140,
title = "VLSI directions and impact: B. T. Murphy Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 70",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80269-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802698",
key = "tagkey198140"
}
@article{tagkey198140,
title = "High density uncommitted arrays using an advanced CMOS technology: W. T. Alexander, S. J. Boardman, P. Krebs and A. T. P. MacArthur Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 76",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80270-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802704",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Design aspects and reliability of a synchroniser made in MOS technology: H. J. M. Veendrick Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 8",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80271-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802716",
key = "tagkey198140"
}
@article{tagkey198140,
title = "C-MOS multiplier speeds task for microprocessors: K. Smith Electronics. 7E (April 1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80272-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802728",
key = "tagkey198140"
}
@article{tagkey198140,
title = "A high speed 64×4 bit 100 K-compatible ECL-RAM with 6 NS access time: H. v. Witsch and H. Ernst Fifth Solid State Circuits Conference — ESSCIRC 79, IEE Publn. 178, 102",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80273-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180273X",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Simple process propels bipolar PROMs to 16-K density and beyond: R. K. Wallace and A. J. Learn Electronics. 147 (March 1980)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80274-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802741",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Thermal studies of a plastic dual-in-line package: C. Mitchell and H. M. Berg IEEE Trans. Components, Hybrids Mfg Technology. Chmt-2(4), 500 (December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "4",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80275-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802753",
key = "tagkey198140"
}
@article{John19813,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "3 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80229-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802297",
author = "John and Butcher"
}
@article{Köhl19815,
title = "Gallium-arsenide — The material and its application",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "5 - 8",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80230-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802303",
author = "Franz Köhl and Fritz G. Vieweg-Gutberlet"
}
@article{Burgess19819,
title = "PIN-FET receivers for 1.3 micron fibre optic systems",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "9 - 13",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80231-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802315",
author = "J.W. Burgess and A.W. Mabbitt and K.L. Monham",
abstract = "Recently developed optical fibres show particularly favourable loss and dispersion characteristics at transmission wavelengths near 1.3 microns. The new generation of terminal equipment needed for long wavelength optical systems includes semiconductor GaInAsP lasers, LEDs and photodetectors. Work at Plessey is aimed towards development of transmitter and receiver units for use in 34 and 140 Mbit/s fibre-optic systems. Our receiver design is based on a hybrid assembly of a PIN photodiode and a high impedance FET preamplifier. This approach provides the best receiver sensitivity whilst offering potentially greater reliability than alternative receiver concepts. Using existing high speed LED transmitter units and PIN-FET receivers, link lengths of up to 40 km can be achieved for 140 Mbit/s systems."
}
@article{Ashton198114,
title = "New generation semiconductor CW laser packages with full hermeticity, integral power monitoring and direct fibre optic launching",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "14 - 18",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80232-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802327",
author = "J.E.U. Ashton and R.M. Gibb and B.A. Eales"
}
@article{DW198119,
title = "The development of fibre optic systems for industrial applications",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "19 - 21",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80233-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802339",
author = "D.W. and Harper",
abstract = "The use of fibre-optic systems in industrial applications involves criteria different from those commonly met with in the field of telecommunications. This paper discusses the requirements of such systems and the resulting design principles."
}
@article{AR198122,
title = "Interfacing to digital telephone exchanges",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "22 - 25",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80234-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802340",
author = "A.R. and Potter",
abstract = "This paper discusses the technology problem engendered by the analogue interfaces to the new generation of digital telephone exchanges. The current state of microelectronics in this area and the likely developments during the next few years are then described."
}
@article{MichaelG198126,
title = "Dual-frequency addressing of liquid crystal devices",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "26 - 32",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80235-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802352",
author = "Michael G. and Clark",
abstract = "The materials requirements, performance, and figures of merit for fast-switching shutters and displays with high levels of multiplexing, using dual frequency addressing, are described with reference to the use of a fast shutter to make a two-colour display, and research aimed at multiplexed reflective-mode VDU-type displays."
}
@article{HMing198133,
title = "Oxygen and carbon in Czochralski-grown silicon",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "33 - 36",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80236-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802364",
author = "H. Ming and Liaw",
abstract = "The purpose of this paper is to review the subject of oxygen and carbon in silicon crystals in terms of: 1) their origin and concentration; 2) their effect on the formation of crystalline defects and the impact of these on IC devices; and 3) the industrial trends regarding problems related to oxygen and carbon."
}
@article{HD198137,
title = "The present status and the future of automotive electronics",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "37 - 41",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80237-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802376",
author = "H.D. and Fournell"
}
@article{Stan198142,
title = "£7.95 280pp Paul Kimberley, ,Microprocessors — an introduction for the professional layman (1981) Hayes Kennedy,NY.",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "42 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80238-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802388",
author = "Stan and Mash"
}
@article{RB198142,
title = "413pp £15.55 C.A. Waitrowski, C.H. House, ,Logic Circuits and Microprocessor Systems (1980) McGraw-Hill.",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "42 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80239-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180239X",
author = "R.B. and Matthews"
}
@article{Keith198142,
title = "Liquid Crystals S. Chandrasekhar Cambridge University Press 312pp £9.95",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "42 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80240-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802406",
author = "Keith and Pitt"
}
@article{tagkey198143,
title = "Characterisation on phosphorous implanted low pressure chemical vapour deposited polycrylstalline silicon: Giora Yaron 20Solid-state electron. 22, 1017 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "43 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80241-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802418",
key = "tagkey198143"
}
@article{tagkey198143,
title = "Influence of the growth parameters in GaAs vapour phase epitaxy: J. M. Durand Philips J. Res. 34, (5/6) 177 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "43 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80242-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180242X",
key = "tagkey198143"
}
@article{tagkey198143,
title = "On the self diffusion entropy in silicon: M. Lannoo and J. C. Bourgoin Solid-State Comms. 32, 913 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "43 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80243-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802431",
key = "tagkey198143"
}
@article{tagkey198143,
title = "Aluminium and alloy sputter deposition for VLSI: L. D. Hartsough and D. R. Denison Solid-State Technol. p. 66 (December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "43 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80244-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802443",
key = "tagkey198143"
}
@article{tagkey198143,
title = "Gold traps in (100) silicon-silicon dioxide interfaces: J. G. Simmons, L. Faraone and A. G. Nassibian Solid-State Electron. 22, 887 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "43 - 44",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80245-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802455",
key = "tagkey198143"
}
@article{tagkey198144,
title = "Melt and solution growth of bulk single crystals of quaternary III–V alloys: K. J. Bachmann, F. A. Thiel and H. Schreiber, Jr. Prog. Crystal Growth Charact. 2, 171 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "44 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80246-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802467",
key = "tagkey198144"
}
@article{tagkey198144,
title = "CW laser annealing of boron and arsenic-implanted silicon; electrical properties, crystalline structure and limitations: A. Gat, T. J. Magee, J. Peng, V. R. Deline and C. A. Evans, Jr. Solid-State Technol. p. 59 (November 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "44 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80247-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802479",
key = "tagkey198144"
}
@article{tagkey198144,
title = "Trends in ion implantation in gallium arsenide: T. Hara and I. Inada Solid-State Technol. p. 19 (November 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "3",
pages = "44 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80248-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281802480",
key = "tagkey198144"
}
@article{John19813,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "3 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80464-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804648",
author = "John and Butcher"
}
@article{Ferry19815,
title = "The role of transport in very small devices for VLSI",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "5 - 9",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80465-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180465X",
author = "D.K. Ferry and H.L. Grubin",
abstract = "As VLSI systems become more dense, individual device size is dramatically reduced in the quest for lower power-delay products and faster logic. The role of velocity overshoot becomes important, not only for reducing the transit-time contribution to logic delay, but more importantly for the role it plays in increasing the effective saturation velocity. These considerations reinforce the view that other semiconductors may be more suitable than Si for VLSI."
}
@article{Roubik198110,
title = "High-resolution switched-capacitor D/A converter",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "10 - 13",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80466-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804661",
author = "Roubik and Gregorian",
abstract = "An offset-free switched-capacitor gain stage is described. By combining the gain stage with a binary weighted capacitor array, a D/A converter is obtained. A cascaded design of an offset-free D/A converter with greatly reduced capacitor ratio is also described."
}
@article{AlfredC198114,
title = "How a new generation of microprocessors supports modular programming in high-level languages",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "14 - 20",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80467-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804673",
author = "Alfred C. and Hartman"
}
@article{AR198121,
title = "Software aids to microcomputer system reliability",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "21 - 24",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80468-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804685",
author = "A.R. and Wood",
abstract = "The use of microcomputers in critical control or telemetry applications is becoming more common but it requires not only the hardware reliability brought about by advances in circuit integration, but also reliable operation of the control software. A distinction is made between error detecting software, and error detection and correction which requires both additional hardware and the software routines to detect fault conditions and apply the necessary correction algorithms. This paper describes some of the simple software techniques which can be used to perform self-test functions on microcomputers to check for hardware failure or software malfunction without the use of additional hardware."
}
@article{Lutsch198125,
title = "Contribution to range statistics of Boron implanted into Silicon at high energies",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "25 - 29",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80469-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804697",
author = "A.G.K. Lutsch and C.A.B. Ball and F.D. Auret and H.C. Snyman",
abstract = "The theoretical distribution of implanted Boron in Silicon as computed by Gibbons et al. shows physically unrealistic negative values for energies higher than 100 keV. The distribution for B in Si has been measured by Auger Electron Spectroscopy for an implant energy of 300 keV.
It was found that the third moment as computed by Gibbons is too high. A good curve fitting with the experimental data can be obtained by a simplified Edgeworth distribution with half the third moment value proposed by Gibbons. Implant distributions are predicted for higher energies."
}
@article{K198130,
title = "Simulated inductances using current conveyors and their applications",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "30 - 31",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80470-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804703",
author = "K. and Pal",
abstract = "Two circuits, each simulating grounded inductances are described in this short note. Practical applications of these inductances in realising band-pass and band-reject filters and oscillators have been considered and the results of the study are also reported."
}
@article{Matkari198132,
title = "A novel approach for higher yield in thick-film resistors",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "32 - 34",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80471-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804715",
author = "A.K. Matkari and S.K. Mithal and C. Kasarbada",
abstract = "Variation of sheet resistivity values from those specified causes great concern to hybrid circuit designers. Apart from such variation, which could be different from one batch to another from the same manufacturer, a more important problem is the dependence of sheet resistivity on aspect ratio and printing parameters. Based upon results for resistor elements having different orientations and aspect ratios, a new scheme of designing resistor elements has been evolved. This scheme is expected to provide good quality thick-film resistors with high yield."
}
@article{tagkey198136,
title = "CMOS, present and future: Toshio Abe Microelectron. J., 10, (4) 31, (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80472-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804727",
key = "tagkey198136"
}
@article{tagkey198136,
title = "Geometry effects of small MOSFET devices: F. H. Gaensslen IBM J. Res. Develop., 23, (6) 682 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80473-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804739",
key = "tagkey198136"
}
@article{tagkey198136,
title = "J-K flip-flop for C-MOS integrated circuits: J. L. Huertas, J. I. Acha, and J. M. Carmona Int. J. Electronics, 47, (4) p. 381 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80474-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804740",
key = "tagkey198136"
}
@article{tagkey198136,
title = "C-MOS picks up ground: B. Leboss Electronics, p. 80 (20 December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80475-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804752",
key = "tagkey198136"
}
@article{tagkey198136,
title = "LSI ready to make a mark on packet-switching networks: G. L. Leger Electronics, p. 89 (20 December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80476-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804764",
key = "tagkey198136"
}
@article{tagkey198136,
title = "Part II: LSI circuit simplifies packet-network connection: G. L. Leger Electronics, p. 95 (20 December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80477-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804776",
key = "tagkey198136"
}
@article{tagkey198136,
title = "Drawing the lines for VLSI: D. Moralee Electron. Pwr., p. 607 (September 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80478-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804788",
key = "tagkey198136"
}
@article{tagkey198136,
title = "Limit values an properties of bipolar and MOS transistors for highest integrated (VLSI) switching circuits: A. Moschwitzer Nachrichtentechnik Electronik., 29, (10) 403 (1979) (in German)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "36 - 37",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80479-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180479X",
key = "tagkey198136"
}
@article{tagkey198137,
title = "IC combines optical sensor, trigger: W. R. Iversen Electronics, 177 (6 December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80480-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804806",
key = "tagkey198137"
}
@article{tagkey198137,
title = "Single IC emits multiple signals: Electronics, p. 190 (6 December 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80481-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804818",
key = "tagkey198137"
}
@article{tagkey198137,
title = "5-volt-only, non-volatile RAM owes it all to polysilicon: R. Klein, W. H. Owen, R. T. Simko and W. E. Tchon Electronics p. 111 (11 October 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80482-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180482X",
key = "tagkey198137"
}
@article{tagkey198137,
title = "Bubble memory family extends to megabit size: R. P. Capece Electronics, p. 37 (27 September 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "2",
pages = "37 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80483-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281804831",
key = "tagkey198137"
}
@article{tagkey19811,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "1 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80302-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803023",
key = "tagkey19811"
}
@article{John19813,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "3 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80303-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803035",
author = "John and Butcher"
}
@article{SC19815,
title = "Compensation for inefficiency in charge transfer device transversal filters",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "5 - 7",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80304-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803047",
author = "S.C. and Dutta Roy",
abstract = "An explicit formula is derived for predistorting the weights of a charge transfer device transversal filter so as to compensate for the inefficiency of the device. An expression is also derived for the resulting error. An example, illustrating the application of the formula, is included."
}
@article{EricLl19818,
title = "Digital communication devices",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "8 - 17",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80305-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803059",
author = "Eric Ll. and Williams",
abstract = "This paper discusses how codecs are used in PCM telecommunication circuits, and also how they can be used for alternative applications. The past developments and future trends of LSI telecommunication circuits are also discussed."
}
@article{Ahmad198118,
title = "A simple method of analysing distributed RC notch-filters",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "18 - 22",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80306-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803060",
author = "S. Ahmad and R. Singh",
abstract = "A new, simple method of analysing distributed parameter notch filters, is presented. The unique feature of this method is that the parameters of the circuit leading to the null conditions are clearly seen."
}
@article{AG198123,
title = "Trends in packaging and interconnection of integrated circuits",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "23 - 29",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80307-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803072",
author = "A.G. and Saunders",
abstract = "This paper reviews the techniques currently used for integrated circuit packaging, and indicates how the type of package is changing as circuits become more complex. As new types of package are introduced, the methods of interconnecting the devices will change, and these new methods of interconnection are also discussed."
}
@article{I198130,
title = "Recent advances in liquid crystal materials",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "30 - 32",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80308-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803084",
author = "I. and Sage",
abstract = "The cyanobiphenyl and cyanoterphenyl families of liquid crystals were the first materials discovered capable of giving a nematic phase of high chemical and photochemical stability in the room temperature region. The advantages of these materials for the current generation of field-effect displays arise from their white colour, relatively low viscosity, and high positive dielectric anisotropy. This paper discusses these and more recently developed mixtures for liquid crystal displays."
}
@article{Poole198133,
title = "Innovations which reduce costs and turn around time of integrated circuit production for small electronic engineering companies",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "33 - 38",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80309-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803096",
author = "K.F. Poole and D.L. Knee and I. Clark",
abstract = "An approach is given which enables small companies to enter into the design and prototype production of integrated circuits to meet their specific requirements, without the major financial and quality control commitments normally associated with integrated circuit production.
An uncommitted integrated circuit is used as the basic vehicle of a microelectronics facility thus reducing costs and speeding up process time without compromising quality. The use of polyester backed film and the re-cycling of slices are cost saving measures which are possible on an uncommitted chip as it is specifically designed as a low packing density, highly versatile chip.
Prototype circuits are made routinely, costing less than U.S. $50 and with a turn around time of less than five days between completion of the design and availability of a packaged integrated circuit for testing."
}
@article{tagkey198139,
title = "A user's performance profile of a thick-film resistor system: James R. Sims and Phillip G. Creter IEEE Trans. Components, Hybrids, Mfg Technol. Chmt-2, (2) 240 (June 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80310-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803102",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Silicon epitaxial films of submicrometer thickness: Elzbieta Nossarzewska-Orlowska, Andrzej Lachowski and Jerzy Borkowicz Electron Technol. 11, (4) 47 (1978)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80311-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803114",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Simplified relations for determining flat-band capacitance and impurity concentration in MOS structures: Jan Z. Olenski Electron Technol. 11, (4) 59 (1978)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "39 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80312-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803126",
key = "tagkey198139"
}
@article{tagkey198139,
title = "Some annealing properties of low-energy-antimony-implanted silicon resistors: S. M. Ku and W. K. Chu Solid-St. Electron. 22, 719 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "39 - 40",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80313-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803138",
key = "tagkey198139"
}
@article{tagkey198140,
title = "The adherence of chromium and titanium films deposited on alumina, quartx, and glass — testing and improvement of electron-beam-deposition techniques: Martin Caulton, William L. Sked and Francis S. Wozniak RCA Rev. 40, 115 (June 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80314-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928180314X",
key = "tagkey198140"
}
@article{tagkey198140,
title = "The limitations of reactively-bonded thick film gold conductors: M. V. Coleman and G. E. Gurnett Proc. Internepcon, Brighton, U.K., October 1978, p. 10",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80315-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803151",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Effect of structural defects on degradation of diffused GaAs LED's: Bogdan Darek and Tomasz Lipinski Electron Technol. 11, (4) 85 (1978)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80316-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803163",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Detection and identification of potential impurities activated by neutron irradiation of Czochraiski silicon: Bobbie D. Stone, Donald B. Hines, Steve L. Gunn and David McKown Solid St. Technol. p. 68 (January 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80317-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803175",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Solar-grade silicon by directional solidification in carbon crucibles: T. F. Ciszek, G. H. Schwuttke and K. H. Yang IBM J. Res. Dev. 23, (3) 270 (May 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80318-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803187",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Coding and decoding of Wafers: B. I. C. F. Van Pul Solid St. Technol. p. 77 (June 1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80319-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803199",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Standardisation: George E. Moore, Sr. Microelectron. J. 10, (2) 30 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80320-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803205",
key = "tagkey198140"
}
@article{tagkey198140,
title = "Design considerations for molecular beam epitaxy systems: P. E. Luscher and D. M. Collins Prog. Crystal Growth Characterisation 2, 15 (1979)",
journal = "Microelectronics Journal",
volume = "12",
number = "1",
pages = "40 - ",
year = "1981",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(81)80321-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269281803217",
key = "tagkey198140"
}
@article{John19803,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "3 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80137-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801376",
author = "John and Butcher"
}
@article{Gregorian19805,
title = "Integrated bandsplit filter system for a dual-tone-multifrequency receiver",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "5 - 12",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80138-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801388",
author = "R. Gregorian and E. Nicholson Jr. and C. Temes",
abstract = "A single-chip integrated filter system, consisting of six switched-capacitor low- and high-pass filters, is described. It performs the separation of the high-group and low-group components of the incoming signal of a dual-tone multifrequency (DTMF) receiver, and the hard-limiting of the separated tones. It can thus serve as an analog front end to a DTMF receiver.
The filter uses state-of-the-art circuitry to achieve a small spread of element-values and a low sensitivity to stray capacitances. It was fabricated using 5μ CMOS technology; the die measures 123 × 186 mils. The chip needs a single voltage supply, and dissipates about 200mW power"
}
@article{Goldspink198013,
title = "The use of saddle-field ion sources for etching semiconductor materials",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "13 - 17",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80139-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080139X",
author = "G.F. Goldspink and P.J. Revell",
abstract = "Etch selectivities, etch rates and the erosion of source components have been measured using two sizes of saddle-field source with reactive and non-reactive gases."
}
@article{Unwin198018,
title = "Simple S-parameter measurement of base spreading resistance",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "18 - 20",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80140-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801406",
author = "R.T. Unwin and K.F. Knott",
abstract = "Transducer power gain measurements on low power uhf and microwave bipolar transistors have been shown to yield reasonable values of base spreading resistance when compared with noise measurements. The equipment required for the former measurements is likely to be more readily available than that required for the latter."
}
@article{Prasad198021,
title = "Diffusion of boron into silicon from doped oxide source",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "21 - 24",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80141-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801418",
author = "P.M. Prasad and V.P. Sundarsingh",
abstract = "This paper describes a new technique for the preparation of boron doped oxide films on silicon by the pyrolytic decomposition of tetraethoxysilane and trimethyl borate. The formation of an oxide film is confirmed using an infra-red technique. The effects of flow rate of ambient and time and temperature of deposition on the formation of oxide film are investigated. A much faster growth rate for oxide film is observed by keeping the tetraethoxysilane at higher temperature. Since the doped oxide is grown at 700°C, the density of dislocations and precipitates will be reduced. The oxide films can be used as boron diffusion sources, especially for shallow junctions. It is observed that the diffusion coefficient is dependent on surface concentration due to source depletion"
}
@article{Greenshield198025,
title = "A programmable pseudo-random noise generator",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "25 - 26",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80142-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080142X",
author = "G. Greenshield and J.R. Jordan",
abstract = "A programmable sequence length, pseudo-random noise generator is described and its implementation in LSIC form discussed."
}
@article{K198027,
title = "Active simulations using current conveyors",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "27 - 28",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80143-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801431",
author = "K. and Pal",
abstract = "This paper describes some new circuits simulating ideal grounded frequency-dependent negative resistances and ideal floating inductances using second generation current conveyors."
}
@article{Peter198029,
title = "Reed relays in microprocessor-based data-acquisition systems",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "29 - 30",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80144-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801443",
author = "Peter and Brown",
abstract = "In spite of the rapid progress in interpretation of circuit components, the apparently old-fashioned relay still has, in its modern realisation, a part to play in system design."
}
@article{M198031,
title = "Electronics for the motor industry — What will be the impact?",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "31 - 35",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80145-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801455",
author = "M. and Westbrook"
}
@article{tagkey198036,
title = "MNOS technology — will it survive?: W. D. Brown Solid St. Technol. p.77 (July 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "36 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80146-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801467",
key = "tagkey198036"
}
@article{tagkey198036,
title = "Digital phase-locked loop finds clock signal in bit stream: John Snyder Electronics p. 126 (30 August 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "36 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80147-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801479",
key = "tagkey198036"
}
@article{tagkey198036,
title = "HMOS II static RAMs overtake bipolar competition: R. M. Jecmen, C. H. Hui, A. V. Ebel, V. Kynett and R. J. Smith Electronics p. 124 (13 September 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "36 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80148-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801480",
key = "tagkey198036"
}
@article{tagkey198036,
title = "Nonequilibrium response of m.o.s. devices to a linear voltage ramp in the presence of illumination: P. G. C. Allman and K. Board Solid-St. electron Devices 3, (5) 117 (September 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "36 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80149-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801492",
key = "tagkey198036"
}
@article{tagkey198036,
title = "ECL accelerates to new system speeds with high-density byte-slice parts: Paul Chu Electonics p. 120 (2 August 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "36 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80150-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801509",
key = "tagkey198036"
}
@article{tagkey198036,
title = "One-chip data-encryption unit accesses memory directly: John Beaston Electronics p. 126 (2 August 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "36 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80151-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801510",
key = "tagkey198036"
}
@article{tagkey198037,
title = "Redistribution of dopant impurities in oxidising ambients: Anthony C, Hill, Roy Bradley and William G. Allen Solid St. Electron, 22, 633 (1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80152-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801522",
key = "tagkey198037"
}
@article{tagkey198037,
title = "On the splitting of the exciton ground state in silicon: N. O. Lipari and M. Altarelli Solid St. Commun. 32, 171, (1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80153-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801534",
key = "tagkey198037"
}
@article{tagkey198037,
title = "Monolithic MICs gain momentum as gallium arsenide MSI nears: Frank J. Moncrief Microwaves p. 42 (July 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80154-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801546",
key = "tagkey198037"
}
@article{tagkey198037,
title = "Electron-exciton inelastic collision cross sections for different semiconductors: S. G. Elkomoss and G. Munschy J. Phys. Chem. Solids 40, 431 (1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80155-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801558",
key = "tagkey198037"
}
@article{tagkey198037,
title = "E-Prom doubles bit density without adding a pin: Bob Greene and Frank Louie Electronics p. 126 (16 August 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "6",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80156-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080156X",
key = "tagkey198037"
}
@article{John19803,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "3 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80033-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800334",
author = "John and Butcher"
}
@article{SY19805,
title = "Integrated schottky logic gate array",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "5 - 11",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80034-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800346",
author = "S.Y. and Lau"
}
@article{Herndon198012,
title = "4096 bit and larger bipolar static random access memories",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "12 - 14",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80035-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800358",
author = "William H. Herndon and Wally Ho and Warren Ong",
abstract = "A description of a new 4096 bit, 600mw, 25ns, TAA static TTL RAM with a 2.3 mil2 cell and a 17,200 mil2 die is presented. The evolution of static bipolar RAMs is discussed along with an analysis of the power allocation of the current 600mW 4096 bit device. The use of PNP memory cell load devices and Darlington word drivers will lower overhead power leading to substantially reduced total device power. An analysis of static RAM die vs. photo-lithography feature size is presented to extrapolate the die size and performance to 16K and 65K static bipolar RAMs."
}
@article{RL198015,
title = "Design limitations in large bipolar PROMs",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "15 - 19",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80036-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080036X",
author = "R.L. and Cline",
abstract = "Bipolar PROMs have had their own technological hurdles to overcome, requiring many evolutionary and innovative improvements in processing and circuit design to bridge the span from 256 to 16K bits. Industry suppliers have taken a highly personalised approach to PROM design and manufacture, with direct ‘second-sourcing’ relatively rare. However, some common threads do run among the various techniques. The present day limitations inherent in these characteristics will be briefly examined.
State-of-the-art in commercially manufactured PROMs is represented today at the 16K bit level. This device will be discussed in light of the above limitations. Finally, an experimental 32K PROM will be introduced as an example of further evolutionary development in PROM technology."
}
@article{Il'yashenko198020,
title = "Experimental methods for the studies of magnetic bubble dynamics",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "20 - 26",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80037-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800371",
author = "E.I. Il'yashenko and Yu.D. Rosenthal",
abstract = "The paper is concerned with the use of high-speed photography and opto-electronic methods for studying the dynamic behaviour of cylindrical magnetic domains (bubbles). For half-disc drive patterns various dynamic bubble characteristics are compared. These include variations of bubble area in propagation along the pattern period, the phase angle made by the drive field vector Hdr and that which indicates the bubble centre, and the bubble-bubble interaction of a sequence of three bubbles propagating through an inter-element gap. The advantages and disadvantages of these methods in representing the bubble dynamics are described in detail. The limited field is indicated where the conventional stroboscopic method is appropriate to investigation of a bubble sequence."
}
@article{Umesh198027,
title = "A review of one dimensional small signal MOSFET modelling",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "27 - 31",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80038-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800383",
author = "Umesh and Kumar",
abstract = "MOS transistors in electronic technology have attained major importance in recent years. A vast amount of literature exists illustrating the great attention that has been focused on this device. Models that characterise its terminal behaviour are essential for the analysis and design of MOS devices and circuits. Several equivalent circuits and various methods of calculating the small signal properties of a MOSFET are available. A comprehensive review is presented of the attempts approximating a MOSFET channel as a one dimensional distributed structure."
}
@article{Francode198032,
title = "The impact of electronic technology in the office",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "32 - 38",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80039-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800395",
author = "Franco de and Benedetti"
}
@article{tagkey198039,
title = "Chemical vapour deposition of indium phosphide: B.C. Easton Acta electronica 21, (2) 151 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "39 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80040-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800401",
key = "tagkey198039"
}
@article{tagkey198039,
title = "Material characterization of thick film-resistor pastes: Jayant S. Shah and Walter C. Hahn IEEE Trans. Components, Hybrids, Mfg Technol. Chmt-1, (4) 383 (December 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "39 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80041-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800413",
key = "tagkey198039"
}
@article{tagkey198039,
title = "Oxygen content and oxide barrier thickness in granular aluminium films: P. Ziemann, G. Heim and W. Buckel Solid St. Commun. 27, 1131 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "39 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80042-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800425",
key = "tagkey198039"
}
@article{tagkey198039,
title = "An uhv system for in situ preparation and analysis of thin films and surfaces: Y. Shapira and E. Grunbaum Vacuum 28, (12) 523",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "39 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80043-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800437",
key = "tagkey198039"
}
@article{tagkey198040,
title = "Internal conformal coatings for microcircuits: James K. Whittington, Glenn T. Malloy, A. R. Mastro and Robert D. Hutchens IEEE Trans. Components, Hybrids, Mfg Technol. Chmt.-1, (4) 416 (December 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80044-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800449",
key = "tagkey198040"
}
@article{tagkey198040,
title = "ZBA-10 electron beam pattern generator made by VEB Carl Zeiss JENA: Hans-Jorg Binder, Peter Hahmann, Erich Christ, Hans-Gunther Eichhorn and Klaus Sonnefeld JEN A Rev. 5/1978, 212",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80045-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800450",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Advances in ion beam milling: David D. Robertson Solid St. Technol. p. 57 (December 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80046-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800462",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Enhancing ultrasonic bond development: Vern H. Winchell, H and Howard M. Berg IEEE Trans. Components, Hybrids, Mfg Technol. Chmt-1, (3) 211 (September 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80047-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800474",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Wafer scale integration—some approaches to the interconnection problem: R.C. Aubusson and R.J. Gledhill Microelectronics 9, (1) 5 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80048-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800486",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Assuring PCB shelf life solderability by air levelling: J. Keller Circuit World 5, (1) 28 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80049-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800498",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Tackling the very large-scale problems of VLSI: a special report: Raymond P. Capece Electronics p. 111 (23 November 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80050-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800504",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Contributions to the design of highly integrated MOS circuits: K. H. Diener et al. Nachrichtentechnik Elektronik 29, (2) 57 (1979). (In German.)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80051-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800516",
key = "tagkey198040"
}
@article{tagkey198040,
title = "Doping and annealing effects on ESR in chemically vapor deposited amorphous silicon: S. Hasegawa, T. Kasajima and T. Shimizu Solid St. Commun. 29, 13 (1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "5",
pages = "40 - 41",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80052-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800528",
key = "tagkey198040"
}
@article{John19803,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "3 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80274-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802746",
author = "John and Butcher"
}
@article{RL19804,
title = "On the control of MOSFET threshold voltage variation for the production of LSI devices",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "4 - 19",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80275-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802758",
author = "R.L. and Maddox",
abstract = "The variation in threshold voltage due to fluctuations in material properties and fabrication process operating conditions is examined. The optimum ranges in wafer dopant concentration, gate oxide thickness, and surface state density are identified such that their fluctuations would have a minimal effect on threshold voltage variation. An additional source of variation of dopant concentration in the MOSFET channel region is identified. This source is shown to be a local autodoping from degenerate diffusions adjacent to the channel during the first moments of gate oxidation. An ion implanted process (patents pending) designed to suppress this autodoping effect is presented and predictions for all optimum conditions affecting ΔVTH are presented."
}
@article{Antognetti198020,
title = "Process oriented simulation of integrated transistors",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "20 - 23",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80276-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080276X",
author = "P. Antognetti and C. Lombardi and M. Zambelli and M. Vanzi",
abstract = "The different aspects of simulating the fabrication process of integrated circuits are discussed; process and device modelling are described and programs for process and device simulation are presented. The process of a microwave bipolar transistor is simulated and the results agree well with measured data."
}
@article{BapeswaraRao198024,
title = "Resistor grids in hybrid circuits",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "24 - 26",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80277-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802771",
author = "V.V. Bapeswara Rao and M.J.R. Murthy",
abstract = "The problem of measuring the individual resistances, without breaking the resistive network, is often encountered in hybrid integrated circuits. Methods of measurement with respect to simple circuit configurations such as a loop of resistances are available in the literature. We present a simple method for the evaluation of element values of a resistive network of an arbitrary configuration, using an ohmmeter, without breaking the network."
}
@article{Pikor198027,
title = "Radiation-hardened CMOS integrated circuits",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "27 - 30",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80278-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802783",
author = "A. Pikor and E.M. Reiss",
abstract = "Over the past five years, substantial effort has been directed at radiation-hardening CMOS integrated circuits using various oxide processes. While most of these integrated circuits have been successful in demonstrating megarad hardness, further investigations have shown that the ‘wet-oxide process’ is most compatible with the RCA CD4000 Series process. This article describes advances in the wet-oxide process that have resulted in multimegarad hardness and yield to MIL-M-38510 screening requirements. The implementation of these advances into volume manufacturing is geared toward supplying devices for aerospace requirements such as the Defense Meterological Satellite program (DMSP) and the Global Positioning Satellite (GPS)."
}
@article{DA198031,
title = "High speed functional testing of microprocessor based boards",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "31 - 33",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80279-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802795",
author = "D.A. and Skingley",
abstract = "Microprocessor systems are extremely complex, presenting the test engineer an almost impossible task, that of effectively testing such a system in all permutations. For example, the Intel 8080 microprocessor is capable of executing between 110,000 and 500,000 instruction/second. Thus a test engineer must be capable of supplying data to the microprocessor at speeds of up to 500kHz. This paper looks at a test system which will implement such a test procedure, one which is both fast and provides diagnostic capabilities to board level."
}
@article{JA198034,
title = "Tunable infra-red semiconductor diode lasers",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "34 - 36",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80280-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802801",
author = "J.A. and Gibson",
abstract = "The development of tunable infra-red diode lasers has provided physicists and spectroscopists with previously unheard of resolution and spectral brightness in the 2.7 to 30 micron region. This paper reviews the technical background of tunable diode lasers and demonstrates some of the areas of potential usefulness for these unique semiconductor devices."
}
@article{tagkey198037,
title = "New gallium arsenide oxidation technique for microwave integrated circuits: H. L. Hartnagel Microelectronics Journal, Vol. 8 No. 4 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80281-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802813",
key = "tagkey198037"
}
@article{tagkey198037,
title = "The design of microcomputer systems: P. Cooke Microelectron. Reliab. 18, 127 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80282-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802825",
key = "tagkey198037"
}
@article{tagkey198037,
title = "Frequency dependent propagation delay in silicon-on-sapphire digital integrated circuits: S. Sheffield Eaton and B. Lalevic Solid-St. Electron. 21, 1253 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80283-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802837",
key = "tagkey198037"
}
@article{tagkey198037,
title = "Design of wide band amplifiers using hybrid integrated techniques: Aurel Sonkoly Electrocomp. Sci. Technol. 5, 165 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "37 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80284-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802849",
key = "tagkey198037"
}
@article{tagkey198038,
title = "Reactive sputter etching of thin films for pattern delincation: R. N. Castellano IEEE Trans. Components, Hybrids, Mfg Technol. Chmt-1, (4) 397 (December 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80285-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802850",
key = "tagkey198038"
}
@article{tagkey198038,
title = "Lead forming and outer lead bond pattern design for tape-bonded hybrids: William R. Rodrigues de Miranda, Rudolph G. Oswald and Don Brown IEEE Trans. Components, Hybrids, Mfg Technol. Chmt.-1, (4) 377 (December 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80286-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802862",
key = "tagkey198038"
}
@article{tagkey198038,
title = "Thermocompression bondability of bare copper leads: Nicholas T. Panousis IEEE Trans. Components, Hybrids, Mfg Technol. Chmt-1, (4) 372 (December 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80287-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802874",
key = "tagkey198038"
}
@article{tagkey198038,
title = "Chip-module package interfaces: Donald P. Seraphim IEEE Trans. Components, Hybrids, Mfg Technol. Chmt-1, (3) 305 (September 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80288-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802886",
key = "tagkey198038"
}
@article{tagkey198038,
title = "Thick film distributed notch filters: K. E. G. Pitt Microelectronics 9, (1) 18 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80289-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802898",
key = "tagkey198038"
}
@article{tagkey198038,
title = "A realistic approach to thick film resistor design: A. E. Guttensohn Solid St. Technol. p. 73 (September 1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80290-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802904",
key = "tagkey198038"
}
@article{tagkey198038,
title = "Time dependence of ion-migration effects in NiCr resistor films: U. Smith and R. Hoffmann Electrocomp. Sci. Technol. 5, 159 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80291-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802916",
key = "tagkey198038"
}
@article{tagkey198038,
title = "64-pin QUIP keeps microprocessor chips cool and accessible: William Lattin, Terry Mathiasen and Steven Grovender Electronics p. 130 (4 January 1979)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80292-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802928",
key = "tagkey198038"
}
@article{tagkey198038,
title = "Electrical properties of the MIS capacitor under illumination: Andrzej Jakubowski and Stanislaw Krawczyk Electron Technol. 11, (1/2) 3 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "4",
pages = "38 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80293-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080293X",
key = "tagkey198038"
}
@article{John19803,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "3 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80088-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800887",
author = "John and Butcher"
}
@article{TP19805,
title = "When — If ever — Will the CRT be replaced by a flat display panel?",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "5 - 9",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80089-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800899",
author = "T.P. and Brody",
abstract = "Solid-state components have replaced vacuum tubes across the entire field of information processing, with the significant exception of the cathode ray tube, which looks unassailable. The only other field where vacuum tubes have retained a foothold is that high power transmission. The CRT is in a seemingly anomalous position — it handles information, not power, so why has it not been replaced yet? This article is an attempt to find some basic clues to this paradox, and to utilise these clues in an indirect attack strategy which might work."
}
@article{DJ198010,
title = "The cathode-ray tube — Why it will not go away",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "10 - 23",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80090-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800905",
author = "D.J. and Robbins",
abstract = "Contrary to the impression created by many proponents of flat panel displays, the CRT is not the last vestige of a moribund technology. It is in fact the dominant electronic display device, and likely to remain so in the forseeable future. The reasons for the dominance are deeply-rooted in the physics of the device, and include the efficient energy conversion and simplicity of addressing inherent in a high-voltage vacuum tube display. This brief review discusses some of the significant new developments in the CRT field. These cover several aspects of tube design and fabrication, such as the flat CRT, the use of fibre optics and the various approaches to multicolour displays. The unequalled versatility of the CRT is due in no small part to the range of phosphor characteristics now available, giving control of display colour, persistence, line-width etc. Recent trends in phosphor research are outlined, including novel composite phosphor materials resulting from developments in powder-handling technology, narrow-band phosphors for contrast enhancement, phosphors for low-voltage displays and screens made from transparent thin phosphor films. In reality the CRT is constantly evolving to meet the requirements of the display user, and so far there is no evidence to suggest that it is the CRT which faces extinction in this evolutionary process."
}
@article{Das198024,
title = "Design of ion implanted resistors with low 1/f noise",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "24 - 27",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80091-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800917",
author = "C.J.M. Das and W.M.C. Sansen",
abstract = "This paper provides general design rules for ion implanted resistors. Their fabrication and temperature dependence are presented. In particular, the dependence of the 1/f noise on the sheet resistance and the area of the resistors is discussed."
}
@article{Krimmel198028,
title = "Energy saving production of silicon single crystal solar cells by ion implantation and laser annealing",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "28 - 30",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80092-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800929",
author = "E.F. Krimmel and A.G.K. Lutsch and J.S.H. Moolman and H. Runge and P.L. Swart",
abstract = "The energy consumption for a typical solar manufacturing process is discussed. It is shown that by applying laser instead of thermal annealing of the implanted area, 7% of the energy consumption could be saved. Improved solar cells could be obtained by laser annealing"
}
@article{Kumar198031,
title = "Accurate single section model of uniform C-R-NC structures",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "31 - 32",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80093-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800930",
author = "U. Kumar and K. Pal",
abstract = "A rational two-port four terminal model of the uniform C-R-NC structure is presented. The model has been constructed utilising the technique postulated earlier by Roy and Kumar of continued fraction expansion and truncation of the two-port admittance parameters."
}
@article{tagkey198033,
title = "Temperature coefficient of resistance for p- and n-type silicon: P. Norton and J. Brandt Solid-St. Electron., 21, p.969 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "33 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80094-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800942",
key = "tagkey198033"
}
@article{tagkey198033,
title = "Solderable low contact resistance metallisations for PTC thermistors: S. M. Marcus and F. K. Patterson Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.80",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "33 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80095-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800954",
key = "tagkey198033"
}
@article{tagkey198033,
title = "High temperature properties of solid tantalum chip capacitors: D. G. Thompson and S. Gunnala IEEE Trans. Parts, Hybrids, Packaging PHP-13(4), p.390 (1977)",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "33 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80096-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800966",
key = "tagkey198033"
}
@article{tagkey198033,
title = "A thick film capacitive temperature sensor: S. Leppavuori and P. Niemela Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.47",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "33 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80097-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800978",
key = "tagkey198033"
}
@article{tagkey198033,
title = "Lead forming and outer lead bond pattern design of tape bonded hybrids: W. R. Rodrigues de Miranda, R. G. Oswald and D. Brown Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.159",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "33 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80098-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080098X",
key = "tagkey198033"
}
@article{tagkey198034,
title = "Hybrid IC structures using solder reflow technology: T. Kamel, N. Nakamura, H. Ariyoshi and M. Doken Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.172",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80099-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800991",
key = "tagkey198034"
}
@article{tagkey198034,
title = "Material characterisation of thick film resistor pastes: J. S. Shah and W. C. Hahn Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.234",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80100-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801005",
key = "tagkey198034"
}
@article{tagkey198034,
title = "Characteristics of an indium-tin oxide transparent conductor deposited from organometallic compositions: V. Siuta and S. J. Stein Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.51",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80101-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801017",
key = "tagkey198034"
}
@article{tagkey198034,
title = "A fast response non-contact type potentiometer using an improved CdSe film: N. Takagi, H. Yamada, M. Sato and K. Tasai Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.223",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80102-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801029",
key = "tagkey198034"
}
@article{tagkey198034,
title = "A low power thermal head realising high quality printing: J. Yamazaki and M. Terashima Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.264",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80103-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801030",
key = "tagkey198034"
}
@article{tagkey198034,
title = "Intervalley diffusion of hot electrons in germanium: C. Canali, C. Jacoboni and F. Nava Solid St. Commun., 26, p.889 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80104-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801042",
key = "tagkey198034"
}
@article{tagkey198034,
title = "The ultrasonic welding mechanism as applied to aluminium- and gold-wire bonding in microelectronics: G. G. Harman and J. Albers IEEE Trans. Parts, Hybrids, Packaging PHP-13(4), p.406 (1977)",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "34 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80105-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801054",
key = "tagkey198034"
}
@article{tagkey198035,
title = "Chemical etching of silicon, germanium, gallium arsenide, and gallium phosphide: W. Kern RCA Rev., 39, p.278 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "35 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80106-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801066",
key = "tagkey198035"
}
@article{tagkey198035,
title = "Low expansivity organic substrate for flip-chip bonding: S. E. Greer Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.166",
journal = "Microelectronics Journal",
volume = "11",
number = "3",
pages = "35 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80107-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280801078",
key = "tagkey198035"
}
@article{John19803,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "3 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80001-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800012",
author = "John and Butcher"
}
@article{Hamilton19805,
title = "Electrothermal effects in integrated circuits",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "5 - 12",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80002-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800024",
author = "D.J. Hamilton and W.J. Kerwin",
abstract = "Thermal coupling among integrated circuit components is generally regarded as having a detrimental effect on circuit performance, particularly in power operational amplifiers, reference voltage circuits and voltage regulators. The design of such circuits must take into account these ‘electrothermal interactions’, as they are termed. However, for certain other circuit applications, it is possible to use these interactions to advantage. In this paper, thermal analysis methods for integrated circuits are described briefly, with emphasis on a computer simulation of electrothermal interactions. The exploitation of electrothermal interactions is discussed for temperature stabilisation of the integrated chip, for generation of long duration pulses, and for synthesis of low frequency (less than 100 Hz) filters. In the last case a state variable method is used, enabling the synthesis, with electrothermal integrators, of low pass, high pass, band pass, and band elimination filters.
Experimental results are given, and limitations and applications are briefly discussed."
}
@article{R198013,
title = "Filtering techniques with switched-capacitor circuits",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "13 - 21",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80003-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800036",
author = "R. and Gregorian",
abstract = "Filters are frequency selective circuits that have wide applications in electronic systems. Among the available passive type filters, the doubly terminated reactance ladder two-parts have many attractive features, the most important being their low-sensitivity to variations of all element values. However, the recent trend in electronics has been toward reducing the size of circuits, a trend which led to the development of integrated circuits. It is relatively simple to reduce greatly the dimensions of resistors and capacitors; unfortunately, it proved impractical to achieve a comparable reduction in the size of inductors mainly because no ferromagnetic effect can be obtained in semiconductors; the building material of integrated circuits. This led to the development of R-C active filters, in which inductors are replaced by active elements. This paper discusses the development of these filters using switched-capacitor circuits."
}
@article{Gregorian198022,
title = "MOS sampled-data high-pass filters using switched-capacitor integrators",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "22 - 25",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80004-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800048",
author = "R. Gregorian and W.E. Nicholson Jr",
abstract = "A high-pass switched-capacitor biquadratic filter section is discussed. Its design is based on the bilinear z-transform. The advantages of this circuit are its simplicity and relatively low sensitivity for moderate pole Qs."
}
@article{SM198026,
title = "A comparison of analogue and digital modulators",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "26 - 28",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80005-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080005X",
author = "S.M. and Bozic",
abstract = "This paper examines digital modulators by means of a method used for the analysis of analogue modulators. It is shown that when applied to the logic equations of digital modulators, their outputs are obtained in terms of simple time functions describing well their main features."
}
@article{C198029,
title = "The conversion of BCD coded words into binary numbers",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "29 - 34",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80006-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800061",
author = "C. and van Holten",
abstract = "An example is given of a static BCD to binary code convertor with 4 decades input and 14 binary outputs.
It is shown that the table look-up principle leads to a ROM with about 140 k bits, and that the use of smaller ROMS becomes complicated, leading to many circuits in cascade and a rather long delay.
The cellular array of adders is described and some simplifications are discussed. By taking into account “don't happen” situations, using a tree structure a circuit as simple as possible (half adders and OR gates as a replacement for full adders) an economical and quick solution is found."
}
@article{CharlesE198035,
title = "Surface analytical techniques applied to electronic components",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "35 - 40",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80007-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800073",
author = "Charles E. and Jowett",
abstract = "A multitude of technologies and the divergent interest of systems, users demand problem-orientated test solutions if thorough testing is to remain an economic proposition. Full testing involves not only measurement of electrical performance characteristics, but also investigation of actual or potential failure modes, both catastrophic and parametric. Such investigations frequently involve the analysis of surface properties of materials."
}
@article{tagkey198041,
title = "Advances in BiMOS integrated circuits: O. H. Schade, Jr. RCA rev., 39, p.250 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "41 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80008-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800085",
key = "tagkey198041"
}
@article{tagkey198041,
title = "On the interpretation of electrical measurements on the GaAs-MOS system: E. Kohn and H. L. Hartnagel Solid St. Electron., 21, p.409 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "41 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80009-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800097",
key = "tagkey198041"
}
@article{tagkey198041,
title = "I2L puts it all together for 10-bit a–d converter chip: P. Brokaw Electronics, p.99 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "41 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80010-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800103",
key = "tagkey198041"
}
@article{tagkey198041,
title = "A contribution to the current gain temperature dependence of bipolar transistors: H.-M. Rein, H. v. Rohr and P. Wennekers Solid-St. Electron., 21, p.439 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "41 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80011-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800115",
key = "tagkey198041"
}
@article{tagkey198042,
title = "Dense, interchangeable ROMs work with fast microprocessors: R. Greene Electronics, p.104 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80012-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800127",
key = "tagkey198042"
}
@article{tagkey198042,
title = "Prelid burn-in of hybrid circuits: J. R. Di Nitto and K. B. Lasch Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.340",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80013-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800139",
key = "tagkey198042"
}
@article{tagkey198042,
title = "A mass production of thick-film car voltage regulators: D. A. Bianchi, P. Faravelli and S. G. Rodari Electrocomp. Sci. Technol., 5, p.45 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80014-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800140",
key = "tagkey198042"
}
@article{tagkey198042,
title = "Hybrid integrated circuit assembly using computerised imaging analysis: H. H. Hickman, A. R. Kalke, W. Lach and L. J. Norman Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.356",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80015-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800152",
key = "tagkey198042"
}
@article{tagkey198042,
title = "Characteristics of low ohmic, high-power, metallised thick-film resistors: F. M. Welsh Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.58",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80016-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800164",
key = "tagkey198042"
}
@article{tagkey198042,
title = "A new moisture sensor for ‘in situ’ monitoring of sealed packages: M. G. Kovac, D. Chleck and P. Goodman Solid St. Technol., p.35 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80017-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800176",
key = "tagkey198042"
}
@article{tagkey198042,
title = "Interaction of parylene and moisture in hermetically sealed hybrids: V. S. Kale Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.344",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80018-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800188",
key = "tagkey198042"
}
@article{tagkey198042,
title = "Automated wire bonding versus tape automated bonding: What are the trade-offs?: S. Khadpe Proc. IEEE 28th Electron. Components Conf., Anaheim, 24–26 April 1978, p.402",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80019-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080019X",
key = "tagkey198042"
}
@article{tagkey198042,
title = "Hybrid realisation of high precision analog conversion modules: L. Kun Electrocomp. Sci. Technol., 5, p.49 (1978)",
journal = "Microelectronics Journal",
volume = "11",
number = "2",
pages = "42 - 43",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80020-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280800206",
key = "tagkey198042"
}
@article{JohnB19803,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "3 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80207-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802072",
author = "John B. and Butcher"
}
@article{RL19804,
title = "The new microelectronic processing technology: a review of the state-of-the-art",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "4 - 18",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80208-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802084",
author = "R.L. and Maddox",
abstract = "This paper discusses advances in the lithographic process. Emphasis will be on resist modelling, developing, and removal methods. Next, the various dry etching techniques are presented. The rest of the paper discusses processing advances outside the category of dry processing. This includes lift-off patterning, ion implantation techniques, laser annealing, RF annealing, and plasma deposition."
}
@article{Sørensen198019,
title = "Applications of the scanning electron microscope EBIC mode to semiconductor device evaluation and failure analysis",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "19 - 25",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80209-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802096",
author = "R.H. Sørensen and I. Thomson and L. Adams",
abstract = "This paper shows how the Electron Beam Induced Current (EBIC) mode of operation finds routine application in the failure analysis and evaluation of semiconductor devices for space application.
Most of the previously published work on EBIC has been of a theoretical nature and has concentrated on the quantitative aspect such as the measurement of minority carrier lifetime. The EBIC mode, however, also lends itself to the qualitative evaluation and analysis of comparatively complex semiconductor devices and in particular the study of diffusion spikes and similar effects.
The routine application of the EBIC mode to practical device analysis is described and illustrated by case histories of device problems. Improvements in experimental techniques are proposed based on the work presented."
}
@article{Sinnadurai198026,
title = "Some problems and possible solutions for hybrid microcircuit reliability",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "26 - 36",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80210-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802102",
author = "F.N. Sinnadurai and K.J. Wilson and D.W.J. Brace",
abstract = "Thick film hybrid microcircuits developed for various telecommunications applications and made by various technologies have been examined by overstress testing and by failure analyses, which have yielded a number of promising results and revealed a number of deficiencies. Examples are presented of the poor reliability obtainable not only from low-cost plastic-coated hybrids but also from supposedly superior hermetically-sealed hybrids—degradation occurring because of moisture permeation or desorption, the evolution of deleterious vapours, bond failure due to inter-metallic reactions, and so on. Reliability problems of this sort are often encountered when the technologies or manufacturing standards are not directed towards high reliability applications, despite conformity to accepted quality standards, so demonstrating that approval of manufacturing capability does not necessarily provide reliability assurance. Nevertheless, the reliability prospects for hybrids are quite bright, because problems can and have been overcome — for example, that some circuits even in low-cost encapsulations can approach the highest reliability standards, that the long term stability of thick-film resistors can be better than 1%, that bonding problems can be obviated by using the right interconnection materials and that less hazardous adhesives are available for use in hermetic encapsulations. The observations show that while it cannot be claimed that hybrid technologies are inherently reliable, neither does it appear that the opposite is true — potentially high reliabilities being achievable by exercising intelligent choice."
}
@article{DC198037,
title = "Microcrack detection in silicon crystals with an ultrasonic sonoprobe",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "37 - 40",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80211-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802114",
author = "D.C. and Guidici",
abstract = "Detecting microcracks in silicon wafers is important because of yield losses which might occur during crystal slicing or thermal processing. Although this paper discusses a non-destructive testing (NDT) method which can be used to detect microcracks in 3-inch diameter silicon crystals, the technique and the following ASTM definitions are also applicable to silicon wafers."
}
@article{tagkey198041,
title = "World abstracts",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "41 - 43",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80212-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802126",
key = "tagkey198041"
}
@article{RB198044,
title = "G.D. Kraft, W.N. Toy, ,Mini/Microcomputer Hardware Design (1979) Prentice-Hall Inc. 514pp £12.95.",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "44 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80213-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802138",
author = "R.B. and Matthews"
}
@article{RB198044,
title = "D. Eadie, ,Minicomputers: Theory and Operation (1979) Reston Publishing Co. 276pp £11.00.",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "44 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80214-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626928080214X",
author = "R.B. and Matthews"
}
@article{K198044,
title = "Syntax of Programming Languages Roland C. Backhouse Prentice-Hall International £12.95",
journal = "Microelectronics Journal",
volume = "11",
number = "1",
pages = "44 - ",
year = "1980",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(80)80215-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269280802151",
author = "K. and Brown"
}
@article{JohnB19793,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "3 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80166-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801664",
author = "John B. and Butcher"
}
@article{DonaldO19795,
title = "Description and use of Electron Beam Accessed Memory systems",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "5 - 11",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80167-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801676",
author = "Donald O. and Smith",
abstract = "EBAM systems having capacities in the range of 256 Mbytes, access time of less than 100 μsec, and 2 Kbyte read transfer times of 424 μsec, are currently under development. The unique technical features of these systems are described and a brief discussion of potential applications in computer systems is given. Future EBAM systems of much greater capacity are preficted."
}
@article{LE197912,
title = "Future microelectronic devices: materials aspects and interfacial phenomena",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "12 - 19",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80168-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801688",
author = "L.E. and Murr",
abstract = "The inevitable, continued reduction in dimensional features of microelectronic devices has already caused a shift to higher-resolution processing techniques and will require even more sophisticated circuit viewing schemes involving the transmission electron microscope. Decreasing dimensions of all components will result in new equivalent circuit concepts because interfaces normally swamped in LSI devices, will become viable, controllable features of fabrication, and may in fact be the device limiting dimensional feature. Furthermore, the ability to tailor lattice parameters and stoichiometries over small dimensions (<0.01 μm) will, coupled with phenomena at the submicron level, pose some of the most exciting materials applications of the century."
}
@article{Solomon197920,
title = "Optimising hardware/software trade-offs in microprocessor applications",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "20 - 26",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80169-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980169X",
author = "L.A. Solomon and D. Block",
abstract = "The application of microprocessors in system design depends on a decision being made on the basis of comparing the microprocessor with so-called ‘standard’ or ‘custom’ logic alternatives. This paper discusses some of the considerations involved in this decision with special reference to input-output interfacing and proposes system features which help to optimise the microprocessor configuration in terms of software-hardware trade-offs."
}
@article{Gregorian197927,
title = "Round-off scheme for a high-speed modified Booth's algorithm multiplier",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "27 - 30",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80170-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801706",
author = "R. Gregorian and K.R. Reddy and W.E. Nicholson",
abstract = "The modified Booth's algorithm multiplier is described and a round-off scheme is proposed. Based on this scheme a 12×12 bit multiplier, with the product rounded-off to 16-bits was implemented in hardware in a special purpose, high performance microprocessor, the SPP. The proposed scheme is not a strict round-off in the mathematical sense. Therefore, it is described in detail to allow a potential user to simulate the effects on his signal processing algorithm."
}
@article{Toshio197931,
title = "CMOS, present and future",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "31 - 34",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80171-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801718",
author = "Toshio and Abe",
abstract = "Today, Complementary Metal-Oxide-Semiconductor (CMOS) technology is recognised as one of the more important semiconductor technologies, a situation which was not envisaged when it was first introduced. In this article, the present status and future trend of the technology and applications of CMOS LSI, will be surveyed, referring mainly to the situation in Japan."
}
@article{tagkey197935,
title = "Functional modelling of floating substrate MOS structures: M. I. ELMASRY and A. G. ELDIN Int. J. Electron. 43(5), p.433(1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "35 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80172-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980172X",
key = "tagkey197935"
}
@article{tagkey197935,
title = "V.-groove MOS (VMOS) enhancement load logic: F. E. HOLMES Solid-St. Electron. 20, p. 775 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "35 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80173-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801731",
key = "tagkey197935"
}
@article{tagkey197935,
title = "Non-equilibrium response of MOS devices to a linear voltage ramp-1. Bulk discrete traps: K. BOARD and J. G. SIMMON Solid-St. Electron. 20, p.859 (1977).",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "35 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80174-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801743",
key = "tagkey197935"
}
@article{tagkey197935,
title = "Morphology and electrical parameters of MOS microelectronics circuits: Dr Z. MACK TESLA Electronics 4, p.99 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "35 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80175-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801755",
key = "tagkey197935"
}
@article{tagkey197936,
title = "Converters adjust to LSI, Bi-fet or amps emerge: L. MATTERA Electronics p.112 (October 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80176-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801767",
key = "tagkey197936"
}
@article{tagkey197936,
title = "Powerful LSI devices bow at silver anniversary (Solid State Circuits Conference, San Francisco): Electronics p.116 (February 1978)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80177-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801779",
key = "tagkey197936"
}
@article{tagkey197936,
title = "Nanoelectronics as a technological revolution: W. HARTMANN Nachrichtentechnik Elektronik 28(5), p. 180 (1978).(In German)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80178-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801780",
key = "tagkey197936"
}
@article{tagkey197936,
title = "A survey of published information on universal logic arrays: S. L. HURST Microelectron. Reliab. 16 p.663 (1977).",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80179-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801792",
key = "tagkey197936"
}
@article{tagkey197936,
title = "A magnetic bubble condensed time-slot interchanging gate: W. NUYTS, R. VLEMINCK and L. de BROUCKERE Microelectronics 8(3), p. 32 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80180-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801809",
key = "tagkey197936"
}
@article{tagkey197936,
title = "CCD and bubble memories: System implications: D. TOOMBS IEEE Spectrum p.36 (May 1978)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80181-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801810",
key = "tagkey197936"
}
@article{tagkey197936,
title = "Analysis of the merged charge memory (MCM) cell: H. S. LEE IBM J. Res. Dev. 21(5), p.402(September 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80182-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801822",
key = "tagkey197936"
}
@article{tagkey197936,
title = "An update: CCD and bubble memories: D. TOOMBS IEEE Spectrum p.22 (April 1978)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80183-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801834",
key = "tagkey197936"
}
@article{tagkey197936,
title = "8086 Microcomputer bridges the gap between 8− and 16-bit designs: B. J. KATZ, S. P. MORSE, W. B. POHLMAN and B. W. REVENEL Electronics p.99 (February 1978)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "36 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80184-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801846",
key = "tagkey197936"
}
@article{tagkey197937,
title = "Electronic behaviours of the gap states in amorphous semiconductors: H. OKAMOTO and Y. HAMAKAWA Solid-St. Communs. 24, p.23(1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "4",
pages = "37 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80185-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801858",
key = "tagkey197937"
}
@article{JohnB19793,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "3 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80001-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800014",
author = "John B. and Butcher"
}
@article{Michael19795,
title = "Microprocessor trends",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "5 - 7",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80002-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800026",
author = "Michael and Smolin",
abstract = "Microprocessor capabilities are continuing to expand at an amazing pace. Some of these capabilities along with other new features, and their justification, are discussed. Projections for the future are also considered."
}
@article{AB19798,
title = "Microprocessor architecture",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "8 - 10",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80003-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800038",
author = "A.B. and Gruszynski",
abstract = "The advent of new 16 bit microprocessor families coupled with increased emphasis and growing interest in multiprocessing establishes the need to focus on the concepts required to efficiently move data within a microprocessor system."
}
@article{Michel197911,
title = "Microprocessors: from characterisation to production",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "11 - 15",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80004-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980004X",
author = "Michel and Bilbault",
abstract = "Microprocessor testing presents more problems than memory testing. Given the regular structure of semiconductor memory, it has been possible to determine a set number of test vectors that will find failures with a high probability of success."
}
@article{M197916,
title = "Microprocessor implementation of the kalman filter",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "16 - 22",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80005-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800051",
author = "M. and Page",
abstract = "The Kalman filter has proved an enormous asset in the processing of noisy measurement signals, but its use for the control of processes has, in the past, been limited to projects where the large cost of a suitably powerful computer system could be justified. Undoubtedly, there exist many problems in process control where a Kalman filter could be used to good effect, but where the cost of great computing power is prohibitive.
With the recent drop in price of microprocessors, a microcomputer system can often be sufficiently cheap for such applications. However, certain modifications must be made to the Kalman filter algorithm to enable it to run sufficiently fast and efficiently on such a small and often slow system.
Various modifications to the Kalman filter algorithms have been investigated and it has been shown that, with no severe limitations, Kalman filters can be implemented on microprocessors. The sampling rate limitation for a Texas Instruments TMS 9900 microprocessor has been determined and the memory storage requirement estimated. The implementation is at present undergoing research."
}
@article{ME197923,
title = "Microprogrammable digital filter implementation using bipolar microprocessors",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "23 - 31",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80006-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800063",
author = "M.E. and Woodward",
abstract = "The paper describes an implementation technique for digital filters based on the use of microprogrammable bipolar bit-slice microprocessors. The filter characteristics are determined by a set of microprograms stored in a programmable read-only memory, a particular filter response being selected by calling up an appropriate microprogram. Fast operation can be achieved by a ternary coding of the filter coefficients plus the use of the bipolar technology, whilst the use of microprogrammable bit-slice computing elements gives a high degree of flexibility. By making use of the redundancies introduced due to the restricted microinstruction set required to compute the filter algorithm, and the simple sequencing requirements of the microprograms, system complexity can be considerably reduced."
}
@article{K197932,
title = "Non-uniformly distributed multi-layer RC phase compensating networks",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "32 - 37",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80007-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800075",
author = "K. and Pal",
abstract = "Multilayer RC structures as phase compensating networks are discussed. Results of a theoretical analysis show that all the three types of phase compensation, viz. lag, lead, and lag-lead can be achieved from these structures, also that the use of non-uniform structures has an appreciable effect on the phase characteristics. Amplitude characteristics have also been studied."
}
@article{tagkey197938,
title = "Designing the maximum performance into bit-slice minicomputers: G. F. Muething, Jr. Electronics, p.91 (30 September 1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "38 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80008-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800087",
key = "tagkey197938"
}
@article{tagkey197938,
title = "Microprocessors and integrated electronic technology: G. E. Moore Proc. IEEE, 64(6), p.837 (1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "38 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80009-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800099",
key = "tagkey197938"
}
@article{tagkey197938,
title = "Double-junction photosensitive devices with high uv responsivity: W. v. Mūnch Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16–1, pp.271–274 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "38 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80010-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800105",
key = "tagkey197938"
}
@article{tagkey197938,
title = "Thin film resistor networks in hybrid circuits: L. Groth Solid State Technology, p.45 (March 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "38 - 39",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80011-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800117",
key = "tagkey197938"
}
@article{tagkey197939,
title = "Application of tape automated bonding technology to hybrid microcircuits: Dr Rudolph, G. Oswald and W. R. de Miranda Solid State Technology, p.33 (March 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80012-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800129",
key = "tagkey197939"
}
@article{tagkey197939,
title = "Screening procedure for adhesion degradation due to solder leaching in thick-film hybrid microcircuits: S. S. Leven Solid State Technology, p.39 (March 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80013-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800130",
key = "tagkey197939"
}
@article{tagkey197939,
title = "Analytical technique for the design of DMOS transistors: T. Masuhara and R. S. Muller Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16–1, pp.173–178 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80014-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800142",
key = "tagkey197939"
}
@article{tagkey197939,
title = "A mathematical study of space-charge layer capacitance for an abrupt p-n semiconductor junction: D. P. Kennedy Solid State Electronics, 20, p.311 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80015-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800154",
key = "tagkey197939"
}
@article{tagkey197939,
title = "Organics used in microelectronics: a review of outgassing materials and efforts: R. K. Traeger Proc. Electron. Components Conf., Arlington, Va., p.408 (May 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80016-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800166",
key = "tagkey197939"
}
@article{tagkey197939,
title = "Properties of die bond alloys relating to thermal fatigue: D. R. Olsen and H. M. Berg Proc. Electron. Components Conf., Arlington, Va., p.193 (May 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80017-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800178",
key = "tagkey197939"
}
@article{tagkey197939,
title = "Electrically conductive epoxies for screen printing applications: G. W. Brassell and D. R. Fancher Proc. Electron. Components Conf., Arlington, Va., p.226 (May 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "39 - 40",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80018-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980018X",
key = "tagkey197939"
}
@article{tagkey197940,
title = "New gold alloy for aluminium bonding in MOS hermetic packages: R. L. Dietz Proc. Electron. Components Conf., Arlington, Va., p.367 (May 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "40 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80019-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800191",
key = "tagkey197940"
}
@article{tagkey197940,
title = "Cadmium telluride nuclear radiation detectors: P. Höschl, P. Polívka, V. Prosser, M. Skrivánková and M. Vidra Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16–1, pp.279–281 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "3",
pages = "40 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80020-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800208",
key = "tagkey197940"
}
@article{John19793,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "3 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80055-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800555",
author = "John and Butcher"
}
@article{MartinL19794,
title = "Silicon epitaxy",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "4 - 12",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80056-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800567",
author = "Martin L. and Hammond",
abstract = "A general survey of the technology of epitaxy and its application to silicon devices. The more common deposition techniques are described and compared in respect of their application to present day devices. An extensive bibliography is given."
}
@article{B197913,
title = "Microfiltration of high purity deionised water",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "13 - 17",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80057-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800579",
author = "B. and Carbonel",
abstract = "Results are presented of experimental studies conducted on a new type of filtration cartridge which is used for colloidal matter removal from the deionised water used for silicon wafer rinsing, in the microelectronics industry. This new filtration cartridge is made of classical pleated cartridges around which has been injected a thin layer of cation and anion microresins, so-called macroreticular resins.
This association of microresins and filters, in the same cartridge allows the user to obtain filtration throughputs and water qualities never reached by classical filters."
}
@article{GriffithL197918,
title = "Direct wafer exposure",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "18 - 29",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80058-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800580",
author = "Griffith L. and Resor",
abstract = "The semiconductor industry is moving towards one and half-micron circuits, always supposing the manufacturing technologies are adequate. This paper examines the merits of photolithography, electron beam microlithography, deep ultra-violet and X-ray microlithography as methods of producing these sub-micron devices."
}
@article{GeorgeE197930,
title = "Standardisation",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "30 - 34",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80059-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800592",
author = "George E. and Moore Sr",
abstract = "A discussion of the current position in the establishment of standards for semiconductor production materials and processes."
}
@article{RichardM197935,
title = "Computer aided design",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "35 - 36",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80060-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800609",
author = "Richard M. and Jennings",
abstract = "An outline of available graphics design systems and prospects for future improvements"
}
@article{Gordon197937,
title = "Custom designed LSI for instrumentation",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "37 - 39",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80061-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800610",
author = "Gordon and Taylor",
abstract = "During the 1970s the demands of the electronics and communications industries for high precision instrumentation at competitive prices set new problems for the instrument design engineer. Faced with a challenge to provide accuracy, reliability and versatility in widely different environments and applications an early decision was made to explore the latest technology for digital frequency meters and universal counter-timers. This paper discusses the consequences of this decision."
}
@article{tagkey197940,
title = "Charging pumping effect and its application in the MOS transistors investigations: A. Owczarek and J. F. Kolodziejski Electronic Technology, 10(1), p.55 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "40 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80062-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800622",
key = "tagkey197940"
}
@article{tagkey197940,
title = "Drain characteristics of thin film MOS FETs: S. T. Hsu RCA Review, 38, p.139 (March 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "40 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80063-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800634",
key = "tagkey197940"
}
@article{tagkey197940,
title = "The multifacets of I2L: E. A. Torrero IEEE Spectrum, p.29 (June 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "40 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80064-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800646",
key = "tagkey197940"
}
@article{tagkey197940,
title = "I2L: A comprehensive review of techniques and technology: J. L. Stone Solid State Technology, p.42 (June 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "40 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80065-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800658",
key = "tagkey197940"
}
@article{tagkey197940,
title = "Integrated injection logic (I2L): J. Klinker Proc. Internepcon. (Microelectronics), p.114 (Oct. 19–21, 1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "40 - 41",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80066-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980066X",
key = "tagkey197940"
}
@article{tagkey197941,
title = "Large scale integration: E. Williams Electronic Engineering, p.77 (November 1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80067-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800671",
key = "tagkey197941"
}
@article{tagkey197941,
title = "The thermal design of an LSI single-chip package: G. N. Ellison IEEE Transactions on Parts, Hybrids, and Packaging, PHP-12, No. 4 (December 1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80068-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800683",
key = "tagkey197941"
}
@article{tagkey197941,
title = "64 stage BCD (bulk charge-transfer device) analog memory with differential integrated clock pulse generator: S. Ohba, M. Aoki, K. Dota, N. Hashimoto and M. Kubo Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.373–377 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80069-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800695",
key = "tagkey197941"
}
@article{tagkey197941,
title = "A study and implementation of a semiconductor memory board: S. Brofferio and G. Raffa Alfa Frequenza, XLV(3), p.181 (1976). (In Italian.)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80070-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800701",
key = "tagkey197941"
}
@article{tagkey197941,
title = "A review of CCD imaging technology: D. D. Wen, C.-K. Kim and G. F. Amelio Solid State Technology, p.83 (September 1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80071-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800713",
key = "tagkey197941"
}
@article{tagkey197941,
title = "Depletion-capacitance-induced distortion in surface-channel CCD transversal filters: C. P. Traynor, J. D. E. Beynon, P. C. T. Roberts and J. Pennock Solid State Electronics Devices, 1 (3), p.73 (April 1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80072-5",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800725",
key = "tagkey197941"
}
@article{tagkey197941,
title = "CCD with meander channel: O. Ohtsuki, H. Sei, K. Tanikawa and Y. Miyamoto Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.379–382 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80073-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800737",
key = "tagkey197941"
}
@article{tagkey197941,
title = "Metallurgical aspects of aluminium wire bonds to gold metallisation: J. L. Newsome, Dr R. G. Oswald and W. R. Rodrigues de Miranda IEEE Reliab. Phys., p.63 (1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "2",
pages = "41 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80074-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800749",
key = "tagkey197941"
}
@article{tagkey19791,
title = "Editorial Board",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "1 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80091-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800919",
key = "tagkey19791"
}
@article{JohnB19793,
title = "Editorial",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "3 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80092-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800920",
author = "John B. and Butcher"
}
@article{AD19795,
title = "An optical pattern generator for large area devices and direct wafer stepping",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "5 - 14",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80093-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800932",
author = "A.D. and Milne",
abstract = "The design and use of a high precision pattern generator, constructed at the Wolfson Microelectronics Institute, is described. The unusual feature of the machine is its capability of producing microelectronic artwork at final size over a field 300mm × 300mm. Input to the machine can either be from standard CAD systems or because of high level machine control software, from a language description of the pattern. The adaptation of the machine to provide direct stepping onto wafers is also considered."
}
@article{Chesney197915,
title = "Noise immunity of CMOS integrated circuits",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "15 - 26",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80094-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800944",
author = "T. Chesney and R. Funk",
abstract = "Sources of noise in logic circuits are discussed and definitions stated. The good noise performance of CMOS devices is then explained."
}
@article{Paul197927,
title = "Memory testing: Characterisation, timing and patterns",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "27 - 34",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80095-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800956",
author = "Paul and Rosenfeld",
abstract = "A discussion of the philosophy and strategy of memory testing from the point of view of the systems user. Test techniques are described and criteria for successful testing are defined."
}
@article{Tassell197935,
title = "Photodiode arrays — Characteristics and applications",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "35 - 44",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80096-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800968",
author = "C. Tassell and D.J. Maule",
abstract = "The first part of this article is intended to provide an understanding of the factors affecting the performance and operation of linear detector arrays. It discusses the physical arrangements, operating principles, fixed-pattern noise and other parameters. Some of the applications for linear detector arrays in industry are also described. The second part of the article discusses two-dimensional self-scanned arrays, camera systems and their application in industry."
}
@article{H197945,
title = "The shape of the input characteristics of BJTs in the common base avalanche mode",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "45 - 49",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80097-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980097X",
author = "H. and Aharoni",
abstract = "A detailed qualitative discussion is given of the shape of an actual characteristic obtained in the input terminals of a BJT operated in avalanche mode. This characteristic is CCNR (Current Controlled Negative Resistance). Non-linear effects such as those which exist in the internal resistances Rb:Re:Rc, in the current gain factor α and in the multiplication factor M are taken into account. The discussion is based on the physical model and it shows that the actual (practical) shape of the input characteristic is formed as a result of a ‘competition’ between two current components which arrive at the base terminal."
}
@article{Umesh197950,
title = "A simple two-port model of the metal oxide semiconductor transistor",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "50 - 53",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80098-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800981",
author = "Umesh and Kumar",
abstract = "An accurate approximation of the exact two-port y-parameters of the metal oxide semiconductor transistor (MOST) operated in the saturation region, is obtained through proper truncation of continued fraction expansions of the parameters. Hence, a simple, single-section, lumped, two-port model is constructed which predicts the frequency and transient characteristics over the very wide frequency and time ranges."
}
@article{JR197954,
title = "A correlation interface circuit for microprocessor systems",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "54 - 56",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80099-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279800993",
author = "J.R. and Jordan",
abstract = "A prototype correlation interface circuit for use with microcomputers is described. Use of the circuit to measure system time delay from the position of the most significant peak of a correlation function is discussed. An interpolation method is described for increasing the resolution of the measurement of peak positions. A special purpose integrated circuit is proposed."
}
@article{CLester197957,
title = "The challenges of the microelectronics era",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "57 - 62",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80100-7",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801007",
author = "C. Lester and Hogan"
}
@article{tagkey197963,
title = "Invited: I2L — Efficient bipolar LSI extension: H. H. Berger Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.121–128 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "63 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80101-9",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801019",
key = "tagkey197963"
}
@article{tagkey197963,
title = "Invited: vertical injection logic — An improved structure of integrated injection logic: T. Nakano, Y. Horiba, K. Kijima, K. Tanaka and O. Tomisawa Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.129–134 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "63 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80102-0",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801020",
key = "tagkey197963"
}
@article{tagkey197963,
title = "Phosphorous buried emitter I2L for high-voltage operating circuits: T. Watanabe, T. Okabe and M. Nagata Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp. 143–146 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "63 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80103-2",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801032",
key = "tagkey197963"
}
@article{tagkey197963,
title = "Surface acoustic wave memory using semiconductor laser: S. Takada, K. Hoh, H. Hayakawa and Y. Tokumaru Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.501–505 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "63 - 64",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80104-4",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801044",
key = "tagkey197963"
}
@article{tagkey197964,
title = "Bias field margin degradation due to long-term memory operation in 16kbit bubble memory chips: N. Yamaguchi Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.334–350 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "64 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80105-6",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801056",
key = "tagkey197964"
}
@article{tagkey197964,
title = "High-performance microprocessor architectures: B. Parasuraman Proc. IEEE. 64(6), p.851 (June 1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "64 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80106-8",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801068",
key = "tagkey197964"
}
@article{tagkey197964,
title = "Flat TV panels with polycrystalline layers: A. G. Fischer Microelectronics, 7(4), p.5 (1976)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "64 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80107-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980107X",
key = "tagkey197964"
}
@article{tagkey197964,
title = "Xerographic development of images stored in PLZT FE/PC devices: A. Kumada, K. Yamashita and S. Sato Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.325–328 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "64 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80108-1",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801081",
key = "tagkey197964"
}
@article{tagkey197964,
title = "Reflection of Gulyaev-Bleustein and Rayleigh waves from rectangular and curved ends of crystals: V. I. Anisimkin and A. I. Morozov Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.527–530 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "64 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80109-3",
url = "http://www.sciencedirect.com/science/article/pii/S0026269279801093",
key = "tagkey197964"
}
@article{tagkey197964,
title = "Phase tuning in optical directional coupler: O. Mikami, J. Noda and Y. Ohmachi Proceedings of the 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976; Japanese Journal of Applied Physics, 16, Supplement 16-1, pp.321–324 (1977)",
journal = "Microelectronics Journal",
volume = "10",
number = "1",
pages = "64 - ",
year = "1979",
note = "",
issn = "0026-2692",
doi = "10.1016/S0026-2692(79)80110-X",
url = "http://www.sciencedirect.com/science/article/pii/S002626927980110X",
key = "tagkey197964"
}